Semiconductor device and semiconductor processing method

Abstract

The present disclosure relates to a semiconductor device. In some embodiments, the semiconductor device includes a first base having a front surface and a back surface, a first main gas inlet passage, a second main gas inlet passage, a first divided passage, and a first through hole; a second base connected to the back surface of the first base and having the first main gas inlet passage, the second main gas inlet passage, the second divided passage, and the second through hole; and a base cover plate connected to the front surface of the first base and having the first main gas inlet passage, the second main gas inlet passage, a third divided passage, and a third through hole, through which a first gas is introduced through the first main gas inlet passage and a second gas is introduced through the second main gas inlet passage. The first gas and the second gas are supplied to the front surface of the first base through the first through hole and the third through hole, and the first gas and the second gas are also supplied to the back surface of the first base through the first through hole and the second through hole.

Description

[Technical field]

[0001] The present invention relates substantially to semiconductor devices, and more particularly to a multi-chamber laminar flow type film deposition apparatus. [Background technology]

[0002] Semiconductor devices can undergo a process of depositing a film coating on a wafer using processing techniques such as atomic layer deposition (ALD) coating, chemical vapor deposition (CVD), and plasma enhanced chemical vapor deposition (PECVD).

[0003] A deposition apparatus or device may be supplied with one or more reactive materials (also referred to as reactive gases or process gases) to produce a deposition coating on a wafer placed in the deposition apparatus or device. Summary of the Invention [Problem to be solved by the invention]

[0004] An embodiment of the present disclosure provides a semiconductor device comprising: a first base having a front and a back surface, a first main gas inlet passage, a second main gas inlet passage, a first divided flow path, and a first through hole; a second base connected to the back surface of the first base and having the first main gas inlet passage, the second main gas inlet passage, the second divided flow path, and the second through hole; and a base cover plate connected to the front surface of the first base and having the first main gas inlet passage, the second main gas inlet passage, a third divided flow path, and a third through hole, into which a first gas is introduced through the first main gas inlet passage and a second gas is introduced through the second main gas inlet passage, wherein the first gas and the second gas are supplied to the front surface of the first base through the first through hole and the third through hole, and the first gas and the second gas are also supplied to the back surface of the first base through the first through hole and the second through hole. [Means for solving the problem]

[0005] Some other embodiments of the present disclosure provide a semiconductor device having a gas inlet through which one or more gases are introduced, a cavity connected to the gas inlet and having a plurality of bases, a gas outlet in the cavity and in communication with the plurality of bases, and a heating apparatus disposed within the plurality of bases of the cavity and having a plurality of chucks disposed corresponding to the plurality of bases such that one or more gases can flow through the plurality of bases and the plurality of chucks into the gas outlet.

[0006] It is to be understood that the broad aspects of the invention and their respective features may be used in combination, interchangeably and / or independently and are not intended to be used as a limitation to any single broad aspect.

[0007] Aspects of the present disclosure will become more readily understood from the following detailed embodiments, taken in conjunction with the accompanying drawings, in which: It should be noted that the various features may not be drawn to scale, and in fact, for clarity, the dimensions of the various features may be arbitrarily increased or decreased. [Brief description of the drawings]

[0008] [Figure 1] 1 is a cross-sectional view of a semiconductor device according to some embodiments of the present disclosure. [Diagram 2] 4 is a cross-sectional view of a semiconductor device according to another embodiment of the present disclosure. [Figure 3A] FIG. 13 is a side view showing an external structure of a semiconductor device according to another embodiment of the present disclosure. [Figure 3B] 3B is a cross-sectional view of the semiconductor device shown in FIG. 3A. [Figure 3C] FIG. 1 is a schematic three-dimensional view of a heater according to some embodiments of the present disclosure. [Figure 3D] FIG. 3D is a cross-sectional view of the heater shown in FIG. 3C. [Figure 3E] 1 is a schematic three-dimensional view of a cavity according to some embodiments of the present disclosure. FIG. [Figure 3F]1 is a cross-sectional view of a cavity and a heater according to some embodiments of the present disclosure. [Figure 3G] FIG. 2 is another cross-sectional view of a cavity and heater according to some embodiments of the present disclosure. [Figure 3H] FIG. 2 is a top view of a base according to some embodiments of the present disclosure. [Figure 4] 1A-1C are schematic diagrams illustrating the operation of a semiconductor device according to some embodiments of the present disclosure. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] The following disclosure provides many different embodiments or examples for implementing different features of the provided subject matter. Specific examples of components and arrangements are also described below. In particular, the descriptions are by way of example only and are not intended to be limiting. In the following description of this application, a first feature formed on a second feature may include an embodiment in which the first feature and the second feature are in direct contact with each other, and may also include an embodiment in which the first feature and the second feature are not in direct contact with each other because an additional feature is formed between the first feature and the second feature. Furthermore, in this application, reference numbers and / or letters may be repeated in the examples. This repetition is for simplicity and clarity and does not indicate a relationship between the various embodiments and / or configurations described.

[0010] The embodiments of the present application are described in detail below. However, it should be understood that many applicable concepts provided by the present disclosure can be implemented in a number of specific environments. The specific environments described are merely examples and do not limit the scope of the present disclosure.

[0011] FIG. 1 is a cross-sectional view of a semiconductor device according to some embodiments of the present disclosure.

[0012] Referring to FIG. 1, a semiconductor device (100) may have, for example, a cavity (101). The cavity (101) has a chamber (121) and a gas inlet (131) therein. The chamber (121) may accommodate one or more wafers (102) to be processed, each of the wafers (102) having an upper surface and a lower surface. The inner walls of the cavity (101) may be heated in any manner to form an inner wall heater, to heat the wafers (102) in the chamber (121), and to facilitate film coating.

[0013] A gas (11) (indicated by a single-headed arrow in FIG. 1 ), which may contain one or more reactants (not shown in FIG. 1 ), may be supplied into the chamber (121) through a gas inlet (131) at the top of the cavity (101). The gas (11) supplied into the chamber (121) may be further circulated within the chamber (121) for diffusion onto the top and bottom surfaces of each wafer (102) to be processed, and may also be used to deposit a coating on the top and bottom surfaces of each wafer (102). Residual gas (11) not used to deposit a coating on the wafers (102) may be exhausted from the chamber (121) through a gas exhaust (141) at the bottom of the cavity (101).

[0014] During the film coating, there is no forced flow of the gas (11) at the top and bottom surfaces of each wafer (102), but instead relies on gas diffusion to deliver the gas (11) to the top and bottom surfaces of each wafer (102). To ensure film uniformity, the residence time of the gas (11) within the chamber (121) can be appropriately increased. Increasing the residence time of the gas within the chamber can, for example (but not limited to), extend the cycle time of the film coating reaction.

[0015] Because each wafer (102) being processed is exposed to gas (11) on both the top and bottom sides, the semiconductor device (100) shown in FIG. 1 is suitable for applications requiring coatings on both the top and bottom sides of the wafer.

[0016] In addition, instead of heating each wafer separately, the wafers are heated using the inner wall heater of the cavity (101), so that the preheating time of the cavity (101) is longer, thereby further reducing the temperature difference between different parts of the same wafer and also reducing the temperature difference between wafers.

[0017] FIG. 2 is a cross-sectional view of a semiconductor device according to another embodiment of the present disclosure.

[0018] The semiconductor device (200) shown in Figure 2 may employ a cavity plate (201) and a cavity plate (202) that define a lateral gas flow passage (211). Thus, the semiconductor device (200) may be referred to as having a single-layer cross-flow structure.

[0019] A single wafer (203) to be processed is placed on the cavity plate (202). Gas (21) (indicated by single-headed arrows in FIG. 2) may enter the lateral gas channels (211) from one side of the cavity (201) and exit the lateral gas channels (211) on the other side of the cavity (201).

[0020] Thus, the semiconductor device (200) shown in Figure 2 does not rely on diffusion of gas (21) across the surface of the wafer (203), but instead applies a deposition coating to the top surface of the wafer (203) by forcing the gas (21) to flow in one direction across the top surface of the wafer (203) (e.g., from left to right as shown in Figure 2). Thus, in the semiconductor device (200) shown in Figure 2, the forced gas (21) allows a more uniform deposition coating to be applied to the top surface of the wafer (203). No deposition coating is applied to the bottom surface of the wafer (203).

[0021] The production capacity of the semiconductor device (200) shown in FIG. 2 is somewhat limited since only one wafer (203) is processed.

[0022] FIG. 3A is a side view illustrating an external structure of a semiconductor device according to another embodiment of the present disclosure.

[0023] The semiconductor device (300) may have a cavity (301), a cavity (302), and a frame (303) that supports the cavity (301) and the cavity (302).

[0024] The cavity (301) may have a cover plate (3011) and a gas inlet (3012) leading to the interior of the cavity (301).

[0025] The cavity 302 may be connected to the cavity 301 by, for example, a bolt, and may be in communication with the cavity 301. The cavity 302 may include, among other things, a valve body 3021, a mechanism 3026, and a gas outlet 3025.

[0026] It should be understood that the cavity (301) and the cavity (302) may be a single cavity and are not limited to the split-type structure shown in Figure 3 A. The internal structure of the semiconductor device (300) shown in Figure 3 A is described in detail below.

[0027] FIG. 3B is a cross-sectional view of the semiconductor device shown in FIG. 3A.

[0028] Referring to Figure 3B, in the semiconductor device (300), the cavity (301) may have a cavity (3013), which may house a heater (3014) (e.g., the portion surrounded by the dashed line in Figure 3B). The heater (3014) may be connected to a mechanism (3026). The heater (3014) may be moved in response to the operation of the mechanism (3026) to move in or out of the cavity (3013).

[0029] The cavity (3013) may be in communication with a gas inlet (3012) for introducing gas therethrough. The cavity (3013) may be in communication with a gas outlet (3025) for exhausting the gas. It is understood that the cavity (3013) may be a multi-layer cavity. The heater (3014) may be a multi-layer heater.

[0030] The cavity (302) may have a wafer supply port (3022). The cavity (302) may have a jack rod (3024). The wafer supply port (3022) may be opened and closed under the control of a valve body (3021). A wafer to be processed (not shown in FIG. 3B) may be transferred into or out of the cavity (302) via the wafer supply port (3022).

[0031] When a wafer to be processed (not shown in FIG. 3B) needs to be transferred into or out of the heater (3014), the heater (3014) is moved adjacent to the wafer supply port (3022) by operation of a mechanism (3026), and with the aid of a jack rod (3024), the wafer is placed onto or lifted off the heater (3014).

[0032] The inner wall heater (3023) may be located on the inner wall of the cavity (301). The inner wall heater (3023) may be located on the inner wall of the cavity (301) and / or the inner wall of the cavity (302). The inner wall heater (3023) may be located on the inner walls of the cavity (301) and the cavity (302). The inner wall heater (3023) may heat a wafer being processed.

[0033] FIG. 3C is a schematic three-dimensional view of a heater according to some embodiments of the present disclosure.

[0034] Referring to FIG. 3C , the heater (3014) is connected to chuck (30171), chuck (30172), chuck (30173), chuck (30174), chuck (30175), chuck (30176), chuck (30177), chuck (30178), chuck (30179), and chuck (3017 10 The wafer may be supported by a chuck (30171) to a chuck (3017 10 ) may be placed on each of the

[0035] Chuck (30171) ~ Chuck (3017 10 ) are provided with corresponding heating wires (30181), (30182), (30183), (30184), (30185), (30186), (30187), (30188), (30189), and (3018 10 ) are arranged. A heating wire (30181), a heating wire (30182), a heating wire (30183), a heating wire (30184), a heating wire (30185), a heating wire (30186), a heating wire (30187), a heating wire (30188), a heating wire (30189), and a heating wire (3018 10 ) corresponds to Chuck (30171) ~ Chuck (3017 10 ) are disposed adjacent to the chucks (30175). For example, a heating wire (30185) may be disposed inside a corresponding chuck (30175) to heat a wafer placed on the chuck (30175). For example, a heating wire (30187) may be disposed adjacent to a corresponding chuck (30177) to heat a wafer placed on the chuck (30177).

[0036] Heating wire (30181)~(3018 10 Each of the heating wires (30181) to (3018) may be connected to a lead wire (3015). 10 Each of the heating wires (30181) to (3018) may be connected to a lead wire (3016). 10Each of the heating wires (30181)-(3018) may receive a signal (e.g., a temperature control signal) via a lead wire (3015). 10 Each of the heaters 3014, 3050, 3060, 307 ...

[0037] Heating wire (30181)~(3018 10 It should be understood that the chuck 100 and the wafer 120 thereon may be replaced with any heating component for heating the corresponding chuck and the wafer thereon.

[0038] In another embodiment of the present disclosure, the heater (3014) may be, but is not limited to, one of the ten chucks shown in FIG. 3C (i.e., chuck (30171) to chuck (3017 10 It should also be understood that the number of chucks may be greater than or less than ten, and that the number of chucks may be greater than or less than ten. In other embodiments of the present disclosure, one corresponding heating element may be disposed on each chuck. In other embodiments of the present disclosure, multiple corresponding heating elements may be disposed on each chuck. In other embodiments of the present disclosure, one corresponding heating element may be disposed for each of multiple chucks.

[0039] Additionally, the heating wire need not be limited to being wrapped or shaped as shown in FIG. 3C, provided it is capable of heating the chuck.

[0040] In this manner, not only can the entire wafer being processed be heated and / or preheated by the inner wall heaters (3023) on the inner walls of the cavity (301) and cavity (302), but each wafer can also be heated individually for its corresponding chuck.

[0041] The individual heating configuration shown in FIG. 3C helps to further improve the temperature uniformity anywhere on the same wafer surface and among multiple wafers, thereby further improving the coating quality.

[0042] FIG. 3D is a cross-sectional view of the heater shown in FIG. 3C.

[0043] Referring to FIG. 3D, the chuck (30171) of the heater (3014) to the chuck (3017 10 ) includes wafers (30191), (30192), (30193), (30194), (30195), (30196), (30197), (30198), (30199), and (3019 10 ) are placed on the respective

[0044] Chuck (30171) ~ Chuck (3017 10 )All internal heating wires (30181)~(3018 10 ) are arranged so that wafers (30191) to (3019 10 ) are heating wires (30181)~(3018) so that the temperature can be controlled individually 10 ) can be heated.

[0045] Signals for individual temperature control may be received through lead wires (3015) and (3016) that reach the top surface of heater (3014). In the embodiment shown in FIG. 3D, the heating wires in odd-layer chucks (30171), (30173), (30175), (30177), and (30179) may be brought out through lead wires (3015). In the embodiment shown in FIG. 3D, the heating wires in even-layer chucks (30172), (30174), (30176), (30178), and (30179) may be brought out through lead wires (3015). 10) may be brought out via leads (3016). However, it should be understood that in other embodiments, the heating wires in the chuck of the heater (3014) may be brought out in any other manner to another location on the heater (3014).

[0046] 3E is a schematic three-dimensional view of a cavity according to some embodiments of the present disclosure. For example, the heater (3014) shown in FIG. 3C can be housed in the cavity (3013) shown in FIG. 3E.

[0047] Referring to FIG. 3E, the cavity (3013) includes a base cover plate (3033), as well as a base (30131), a base (30132), a base (30133), a base (30134), a base (30135), a base (30136), a base (30137), a base (30138), a base (30139), and a base (3013 10 The bases may be connected to each other by, for example, bolts.

[0048] The gas inlet (3012) includes a gas inlet (30121), a gas inlet (30122), and a gas inlet (30123). Gas (e.g., residual gas after the coating process is completed) can be exhausted out of the cavity (3013) through a gas exhaust port (3025).

[0049] In another embodiment of the present disclosure, the cavity (3013) may include multiple bases (i.e., base (30131) to base (3013 10 ), the number of which may differ from that shown in FIG. 3E.

[0050] It should also be understood that in other embodiments of the present disclosure, the cavity (3013) may be provided with multiple gas inlets, the number of which may differ from that shown in FIG. 3E.

[0051] FIG. 3F is a cross-sectional view illustrating a cavity and a heater according to some embodiments of the present disclosure.

[0052] For example, the heater (3014) shown in FIG. 3C or FIG. 3D may be housed in the cavity (3013) shown in FIG. 3E, and FIG. 3F is a cross-sectional view of the heater (3014) after it is housed in the cavity (3013). 10 The upper surfaces of the chucks (30171) to (30172) in FIG. 3D may be substantially flush with the corresponding upper surfaces of the chucks in the heater (3014).

[0053] Gas (321) may enter cavity (3013) via gas inlet (30121). Gas (322) may enter cavity (3013) via gas inlet (30122). Gas (321) and gas (322) may be, for example, the same or different process gases and may be indicated by the single-headed arrow and single-headed dashed arrow, respectively, shown in FIG. 3F.

[0054] Base(30131)~Base(3013 10 ) may each have a main gas inlet (3113) and a main gas inlet (3123).

[0055] The main gas introduction passage (3113) passes through the base cover plate (3033) and the base (30131) to the base (30139) in the longitudinal direction and is connected to the base (3013). 10 ), and may have divided passages (31131) to (31136) for communicating with the entire main gas inlet passage (3113).

[0056] The gas (321) flowing into the cavity (3013) may flow into the main gas inlet passage (3113) and the divided passages (31131) to (31136), and may flow from the through hole (3201) to the through hole (320 11 ) to the heater (3014). 11) may extend in a direction substantially perpendicular to the major surface of the corresponding substrate. For example, the through-holes (3201) extend in a direction perpendicular to the major surface of the base cover plate (3033) (and substantially perpendicular to the main gas inlet passages (3113)) and communicate with a row of downwardly inclined capillary passages. In this manner, the gas (321) can be supplied to the surface of the wafer corresponding to the base (30131) through the main gas inlet passages (3113) and the divided channels (31131), as well as through-holes (3201) and their capillary passages.

[0057] It should be understood that the through holes (3201) and their capillary paths are not limited to the form shown in FIG. 3F, and may be arranged in any manner or in any number, so long as the gas (321) flowing through the main gas inlet path (3113) and the divided paths (31131) can be reliably supplied to the surface of the wafer corresponding to the base (30131).

[0058] Similarly, the main gas inlet passage (3123) may extend through the base cover plate (3033) and the base (30131) to the base (30138) in the longitudinal direction to reach the base (30139), and may have divided channels (31231) to (31235) all of which are in communication with the main gas inlet passage (3113). The gas (322) that has flowed into the cavity (3013) may flow into the main gas inlet passage (3123) and the divided channels (31231) to (31235), and may extend through the through holes (3201) to (320 11) to the heater (3014). For example, the through-hole (3202) extends in the base (30131) in a direction perpendicular to the main plane (and approximately perpendicular to the main gas inlet passage (3123)) and communicates with two rows of capillary passages inclined upward and downward. In this manner, the gas (322) flowing through the main gas inlet passage (3123) and the divided passages (31231), as well as the through-hole (3201), may be transported to the surface of the wafer corresponding to the base (30131) through the capillary passage inclined upward, and may also be transported to the surface of the wafer corresponding to the base (30132) through the capillary passage inclined downward. It should be understood that the through holes (3202) and their two rows of capillary passages having different orientations are not limited to the format shown in FIG. 3F, and may be arranged in any manner or in any number, so long as the gas (322) flowing through the main gas inlet passage (3123) and the divided passages (31231) can be reliably supplied to the surfaces of the wafer corresponding to the base (30131) and base (30132).

[0059] The gas (321) and gas (322) flowing into the cavity (3013) may further flow along the top surface of the wafer located on each chuck of the heater (3014) (e.g., flowing from left to right as shown in FIG. 3F) to provide a uniform coating on the surface of the wafer. In one embodiment, the gas (321) may enter the cavity (3013) before the gas (322), and then the cavity (3013) may be purged, and then the gas (322) is supplied. Similarly, the gas (322) may enter the cavity (3013) before the gas (321), and then the cavity (3013) may be purged, and then the gas (321) is supplied. In another embodiment, the gas (321) and the gas (322) may enter the cavity (3013) at the same time. It should be understood that the above application scenarios may be flexibly adopted according to actual needs.

[0060] The residual gas (321) may continue to flow in one direction (e.g., transversely from left to right as shown in FIG. 3F) until it is exhausted out of the cavity (3013) through the gas exhaust (3025). The residual gas (322) may continue to flow in one direction (e.g., transversely from left to right as shown in FIG. 3F) until it is exhausted out of the cavity (3013) through the gas exhaust (3025).

[0061] It should be understood that the manner in which gases are delivered to the top surface of the wafer is not limited to the combination and allocation of gases (321) and (322) along the split channels (3113) and split channels (3123) as shown in FIG. 3F, but instead, gases (321) and (322) may be allocated and combined in any manner, provided that gases (321) and (322) are reliably delivered to the top surface of the wafer.

[0062] FIG. 3G is another cross-sectional view showing a cavity and a heater according to some embodiments of the present disclosure.

[0063] The heater (3014) shown in FIG. 3G and FIG. 3D may be housed in the cavity (3013) shown in FIG. 3G. 10 The upper surfaces of the chucks (30171 to 3017 in FIG. 3D ) in the heater (3014) are 10 ) may be substantially flush with the corresponding upper surface of

[0064] Gas (323) (one-way arrow in Figure 3G) flows from base (30131) to base (3013 10 The base (30131) to the base (3013) may pass through a purge flow path (3213) that passes through the base (30131) to the base (3013). 10 ) along the entire periphery (shown in FIG. 3H and described in more detail below) of each of the cavity (3013) and may eventually be exhausted out of the cavity (3013) via the gas exhaust port (3025).

[0065] The gas (323) may be, for example, a purge gas. In order to prevent contaminants from forming inside the cavity (3013) due to leakage of the process gas, the gas (323) is supplied from the base (30131) to the base (3013). 10 ) can be purged into each of the following.

[0066] FIG. 3H is a top view of a base according to some embodiments of the present disclosure.

[0067] Base(30131)~Base(3013 10 ) may each have substantially the same structure, so only the base (30131) is shown in FIG. 3H as an example to illustrate the structure of the base as viewed from above.

[0068] Referring to FIG. 3H, gas (323), which may be, for example, a purge gas (single-way arrow in FIG. 3H), may flow through a purge passage (3213) penetrating the base (30131), may flow along the entire periphery of the base (30131) (single-way arrow in FIG. 3H), and may be exhausted out of the cavity via a gas exhaust port (3025).

[0069] A centrally located notch (3413) in the base (30131) may be formed to accommodate the heater (3014) shown, for example, in Figures 3C and 3D.

[0070] In this way, particles formed in the cavity due to leakage of process gas can be evacuated out of the cavity by the gas (323).

[0071] FIG. 4 is a schematic diagram illustrating the operation of a semiconductor device according to some embodiments of the present disclosure.

[0072] Referring to FIG. 4, in semiconductor device (400), heater (4014) can be moved longitudinally (up and down arrows in FIG. 4) in and out of cavity (4013) upon actuation of mechanism (4026).

[0073] First, the mechanism (4026) can be moved downward to move the heater (4014) out of the cavity (4013) and close to the wafer supply port (4022).

[0074] Thereafter, for example, but not limited to, in response to the action of a robot arm, the wafer to be processed may be transferred to the chuck of the heater (4014) through the wafer inlet (4022) and supported by the jack rod (4024). The jack rod (4024) may then be controlled to lower so that the wafer is smoothly placed on the surface of the chuck. It should be appreciated that this action may be performed cyclically to transfer multiple wafers to be processed to multiple chucks of the heater (4014).

[0075] After all the wafers have been transferred into the heater (4014), the mechanism (4026) moves upward to move the heater (4014) into the cavity (4013) for the wafer coating process.

[0076] After the wafer coating process is completed, the mechanism (4026) may be moved downward again to move the heater (4014) out of the cavity (4013), and the mechanism (4026) may move the heater (4014) closer to the wafer supply port (4022).

[0077] The jack rod (4024) may then be controlled to rise and lift the processed wafer off the surface of the chuck, and the wafer may be moved out of the heater (4014) via the wafer inlet (4022), for example (but not limited to) by a robotic arm.

[0078] The semiconductor device provided by the embodiments of the present disclosure can not only significantly improve production capacity, but also has a multi-layer cross-flow structure that can maintain the gas flow in one direction, thereby ensuring film uniformity and improving the efficiency of wafer coating.

[0079] Furthermore, the multi-layer heater structure provided by the present disclosure allows each wafer to be heated individually while being heated and / or preheated using the inner wall heaters of the cavity, thereby significantly improving the temperature uniformity between wafers and ensuring film uniformity.

[0080] Furthermore, the multi-layer heater structure provided by the embodiments of the present disclosure can individually heat the chuck corresponding to each wafer, so that each wafer is exposed to reactive gases on only one side (e.g., the top side), and is therefore particularly suitable for applications in which a coating is applied to one side of a wafer.

[0081] The terms "approximately", "essentially", "substantially" and "about" are used in this application to describe and explain small differences. When used in conjunction with an event or circumstance, the term may refer to when the event or circumstance occurs exactly and when the event or circumstance occurs approximately. The term "about" as used herein with respect to a given value or range generally means within ±10%, ±5%, ±1%, or ±0.5% of the given value or range. A range may be expressed herein as from one endpoint to the other endpoint or between two endpoints. Unless otherwise specified, all ranges described in this disclosure include the endpoints. The term "substantially coplanar" may refer to two surfaces that are disposed along the same plane within a few micrometers (μm), for example, within 10 μm, within 5 μm, within 1 μm, or within 0.5 μm. When referring to "substantially" the same numerical value or index, the term may refer to values ​​that are within ±10%, ±5%, ±1%, or ±0.5% of the mean of the value.

[0082] For example, when the term is used in conjunction with a value, the term may refer to a variation range of ±10% or less of the value, e.g., ±5% or less, ±4% or less, ±3% or less, ±2% or less, ±1% or less, ±0.5% or less, ±0.1% or less, or ±0.05% or less. For example, two values ​​may be considered to be "substantially" or "nearly" the same if the difference between the two values ​​is ±10% or less of the average value of the values ​​(e.g., ±5% or less, ±4% or less, ±3% or less, ±2% or less, ±1% or less, ±0.5% or less, ±0.1% or less, or ±0.05% or less). For example, being "essentially" parallel may refer to an angle variation range of ±10 degrees or less relative to 0 degrees, e.g., ±5 degrees or less, ±4 degrees or less, ±3 degrees or less, ±2 degrees or less, ±1 degree or less, ±0.5 degrees or less, ±0.1 degrees or less, or ±0.05 degrees or less. For example, being "essentially" vertical may mean that the range of angular variation from 90 degrees is ±10 degrees or less, for example, ±5 degrees or less, ±4 degrees or less, ±3 degrees or less, ±2 degrees or less, ±1 degree or less, ±0.5 degrees or less, ±0.1 degrees or less, or ±0.05 degrees or less.

[0083] For example, two surfaces may be considered to be coplanar or substantially coplanar if the displacement between them is 5 μm or less, 2 μm or less, 1 μm or less, or 0.5 μm or less. A surface may be considered to be flat or substantially flat if the displacement between any two points on the surface relative to the plane is 5 μm or less, 2 μm or less, 1 μm or less, or 0.5 μm or less.

[0084] Unless the context clearly dictates, the singular articles "a / an" and "the" as used herein can include the plural. In describing some embodiments, a component provided "on" another component can include a case where the aforementioned component is directly on the latter component (e.g., in physical contact with the latter component) and a case where one or more components are interposed between the aforementioned component and the latter component.

[0085] For ease of explanation, the spatially relative terms "below," "under," "lower," "above," "top," "lower," "left," and "right" used herein may be used to describe the relationship between one component or feature as shown in the figures and another component or feature. In addition to the orientation shown in the figures, the spatially relative terms are intended to include different orientations of the device during use or operation. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptions herein may be used accordingly for explanation. When one component is said to be "connected" or "coupled" to another component, the one component may be directly connected or coupled to the other component, or there may be intervening components therebetween.

[0086] Thus far, some embodiments and detailed features of the present disclosure have been briefly described. The embodiments described in this disclosure may be readily used as a basis for designing or modifying other processes and structures to achieve the same or similar purposes and / or obtain the same or similar benefits provided by the embodiments of the present disclosure. Such equivalents do not depart from the spirit and scope of the present disclosure, and various changes, substitutions, and modifications may be made without departing from the spirit and scope of the present disclosure.

Claims

1. a first base having a front surface and a back surface, a first main gas inlet passage, a second main gas inlet passage, a first divided passage, and a first through hole; a second base connected to the rear surface of the first base and having the first main gas inlet passage, the second main gas inlet passage, a second divided flow passage, and a second through hole; a base cover plate connected to the front surface of the first base, the base cover plate having the first main gas inlet passage, the second main gas inlet passage, a third divided flow path, and a third through hole, a first gas being introduced through the first main gas inlet passage, and a second gas being introduced through the second main gas inlet passage, The first gas and the second gas are supplied to the front surface of the first base via the first through hole and the third through hole, and the first gas and the second gas are also supplied to the back surface of the first base via the first through hole and the second through hole.

2. 2. The semiconductor device of claim 1, wherein the first and second main gas inlet passages pass through the base cover plate, the first base, and the second base.

3. 2. The semiconductor device of claim 1, wherein the first through hole, the second through hole, and the third through hole communicate with the front and back surfaces of the first base through one or more capillary passages.

4. Further comprising a heating device, The heating device includes: a first chuck having a first surface and a second surface opposite the first surface; 2. The semiconductor device of claim 1, further comprising: a second chuck connected to the first chuck, the second chuck having a third surface spaced apart from the second surface and a fourth surface opposite the third surface.

5. The semiconductor device of claim 4 , wherein the first surface of the first chuck is coplanar with the front surface of the first base.

6. The semiconductor device of claim 4 , wherein the third surface of the second chuck is coplanar with the back surface of the first base.

7. a first heating element disposed within the first chuck; The semiconductor device of claim 4 , further comprising: a second heating element disposed within the second chuck.

8. 8. The semiconductor device of claim 7, wherein the first heating element independently heats the first chuck and the second heating element independently heats the second chuck.

9. 8. The semiconductor device of claim 4 or 7, wherein the first heating element and the second heating element are extended from the first surface of the first chuck.

10. The semiconductor device of claim 4 or 7, further comprising a first wafer mounted on the first surface of the first chuck.

11. The semiconductor device of claim 4 or 7, further comprising a second wafer mounted on the third surface of the second chuck.

12. a gas inlet through which one or more gases are introduced; a cavity connected to the gas inlet and having a plurality of bases; a gas outlet in communication with the plurality of bases within the cavity; a heating apparatus disposed within the bases of the cavity and having a plurality of chucks disposed corresponding to the bases so as to cause the one or more gases to flow through the bases and the chucks into a gas outlet.

13. The semiconductor device of claim 12 , wherein the heating apparatus further comprises a heating element disposed within each of the plurality of chucks.

14. The semiconductor device of claim 12 , wherein the heating apparatus moves relative to the cavity.

15. The semiconductor device of claim 13 , wherein each of the plurality of chucks is individually heated by the heating element disposed therein.

16. The cavity has a main gas inlet passage penetrating the cavity and a divided flow passage communicating with the main gas inlet passage, The semiconductor device of any one of claims 12 to 15, wherein the one or more gases flow through the main gas inlet passage and the divided passages by the plurality of bases and the plurality of chucks, and into the gas outlet.

17. The cavity has a purge passage passing through the cavity, The semiconductor device according to any one of claims 12 to 15, wherein the one or more gases purge the bases through the purge passages and flow into the gas outlet.

18. The semiconductor device according to any one of claims 12 to 15, wherein the cavity further comprises an inner wall heater for preheating a wafer placed in the heating apparatus.

19. A semiconductor processing method comprising the step of processing a surface of a plurality of wafers with a semiconductor device according to any one of claims 1 to 18.

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