Semiconductor Processing Equipment

Abstract

The semiconductor process apparatus includes a process pipe, a plurality of intake pipes and a plurality of groups of electrode assemblies, in which a process chamber and a plurality of buffer chambers are formed, the plurality of intake pipes extend into the plurality of buffer chambers correspondingly, an exhaust port communicating with the process chamber is provided on a side wall of the process pipe, each buffer chamber is provided corresponding to at least one group of electrode assemblies, the electrode assembly extends into the buffer chamber and is connected to an RF power source, the electrode assembly includes a deformable electrode core, a plurality of electrode tubes and an electrode mesh, the plurality of electrode tubes are arranged in sequence along the extension direction of the electrode core, with a predetermined gap between two adjacent electrode tubes, the electrode core is inserted into the plurality of electrode tubes and connected to the plurality of electrode tubes respectively, and the electrode mesh is arranged along the extension direction of the electrode core and fitted around the outside of the plurality of electrode tubes.

Description

[Technical field]

[0001] TECHNICAL FIELD This application is in the field of semiconductor technology, and more particularly, relates to semiconductor processing equipment. [Background technology]

[0002] Atomic layer deposition equipment can achieve precise control over the film layer thickness by using RF to add precursors into the vacuum chamber during the process cycle, and the equipment can deposit multiple types of thin films such as SiO2, SiNx, TiN, AlN, etc. In vertical atomic layer deposition equipment, the key technology is to use a high frequency electric field to turn the process gas into plasma, so the plasma generator is one of the key structures to ensure the completion of the process.

[0003] However, the electrodes used in current plasma generating devices have a multi-layer nickel mesh structure woven on the outside, and the process of weaving the nickel mesh is costly and requires a lot of nickel material, which makes the electrodes expensive and difficult to manufacture. At the same time, the material of the electrodes is soft, so the length of the electrodes is easily changed under the influence of gravity during use, which affects the service life of the electrodes. Summary of the Invention [Problem to be solved by the invention]

[0004] An object of the embodiments of the present application is to provide a semiconductor process apparatus capable of solving the above problems. [Means for solving the problem]

[0005] In order to solve the above technical problems, the present application is realized as follows.

[0006] An embodiment of the present application provides a semiconductor processing apparatus, the semiconductor processing apparatus including a process pipe and an electrode group, a process chamber and a buffer chamber formed inside the process pipe, the buffer chamber communicating with the process chamber, the buffer chamber corresponding to at least one of the electrode groups, one end of the electrode group of each group extends through the process chamber into the buffer chamber, and the other end of the electrode group of each group is used for connecting to an RF power source, each of the electrode groups of each group includes two electrode assemblies, the two electrode assemblies are respectively used for connecting to a positive electrode and a negative electrode of the RF power source, each of the electrode assemblies includes a deformable electrode core, a plurality of electrode tubes and an electrode net, the plurality of electrode tubes are arranged in order along an extension direction of the electrode core, and a predetermined gap is defined between two adjacent electrode tubes, the electrode core is inserted into the plurality of electrode tubes and connected to the plurality of electrode tubes, the electrode net is arranged along an extension direction of the electrode core and fitted to the outside of the plurality of electrode tubes. Effect of the Invention

[0007] Compared with some current plasma generating devices that weave multiple layers of nickel mesh structure on the outside of the electrodes, the semiconductor process device in the embodiment of the present application uses a new electrode assembly, which can support and protect the deformable electrode core by multiple electrode tubes, thereby improving the strength of the entire electrode assembly, making the electrode assembly less susceptible to length changes due to gravity, and further extending the service life of the electrode assembly; at the same time, the electrode assembly in the embodiment of the present application does not install multiple layers of nickel mesh on the outside of the electrode core, but instead inserts multiple electrode tubes in sequence along the extension direction of the electrode core on the outside of the electrode core, and inserts electrode mesh on the outside of the multiple electrode tubes, which can reduce the amount of nickel mesh used and eliminate the need to install multiple layers of nickel mesh, thereby reducing the manufacturing cost and difficulty of the electrode assembly, and therefore ensuring the service life of the semiconductor process device. [Brief description of the drawings]

[0008] [Figure 1] 1 is a first structural schematic diagram of a semiconductor processing device disclosed in an embodiment of the present application; [Diagram 2] FIG. 2 is a schematic diagram of a second structure of a semiconductor processing device disclosed in an embodiment of the present application. [Diagram 3] FIG. 2 is a schematic diagram showing the structure of a process pipe, a protective pipe, and an intake pipe disclosed in an embodiment of the present application. [Figure 4] FIG. 2 is a partial schematic diagram of a process pipe, a protective pipe, an intake pipe, an electrode assembly, a first connection assembly, and a second connection assembly disclosed in an embodiment of the present application. [Diagram 5] 2 is a partial schematic diagram of an electrode assembly, a first connection assembly, and a second connection assembly disclosed in an embodiment of the present application. [Figure 6] FIG. 1 is a first schematic diagram of an electrode assembly disclosed in an embodiment of the present application. [Figure 7] FIG. 2 is a second schematic diagram of an electrode assembly disclosed in an embodiment of the present application. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Hereinafter, the technical solutions in the embodiments of the present application will be described clearly and completely with reference to the drawings of the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, but not all of the embodiments. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without any creative efforts belong to the protection scope of the present application.

[0010] The terms "first," "second," etc. in the specification and claims of this application are not intended to describe any particular order or priority, but are instead intended to distinguish between similar objects. It should be understood that data used in this manner is interchangeable where appropriate, such that embodiments of this application may be practiced in orders other than those illustrated or described herein, and that objects distinguished by "first," "second," etc. are generally of the same type and are not intended to limit the number of objects, e.g., the first object may be one or more. Furthermore, "and / or" in the specification and claims represents at least one of the connected objects, and the character " / " generally represents an "or" relationship between the related objects before and after.

[0011] Hereinafter, the embodiments of the present application will be described in detail with reference to the drawings based on specific embodiments and application scenarios.

[0012] 1 to 7, the embodiment of the present application discloses a semiconductor processing apparatus, which may be a vertical atomic layer deposition apparatus, and of course, the apparatus may be other apparatus, and the embodiment of the present application does not specifically limit it. The disclosed semiconductor processing apparatus includes a process pipe 200 and an electrode group, in which a process chamber 210 and a buffer chamber 220 are formed inside the process pipe 200, the buffer chamber 220 is connected to the process chamber 210, and the buffer chamber 220 is provided corresponding to at least one electrode group, one end of each electrode group extends through the side wall of the process chamber 210 into the corresponding buffer chamber 220, and the other end of each electrode group is used for connecting to an RF power source. Each electrode group includes two electrode assemblies 100, and the two electrode assemblies 100 are used for connecting to the positive and negative poles of the RF power source, respectively.

[0013] Optionally, the housing may be welded to the side wall of the process pipe 200 so as to form a buffer chamber 220 inside the process pipe 200, or the buffer chamber 220 may be formed simultaneously during the manufacture of the process pipe 200. In the embodiment of the present application, the manner of forming the buffer chamber 220 is not particularly limited.

[0014] By installing the electrode assembly 100, the process gas in the buffer chamber 220 can be excited to excite the process gas into a plasma state, thereby forming plasma, which enters the process chamber 210 from the buffer chamber 220 to perform processing on the wafer in the process chamber 210. In this process, an RF power supply feeds power to two electrode assemblies 100 in each electrode group through an RF cable.

[0015] 6, each electrode assembly 100 includes an electrode core 110, a plurality of electrode tubes 120, and an electrode mesh 130, the plurality of electrode tubes 120 are sequentially arranged along the extending direction of the electrode core 110, and a predetermined gap is provided between two adjacent electrode tubes 120, the electrode core 110 is inserted into the plurality of electrode tubes 120, and is connected to each of the plurality of electrode tubes 120, and the electrode mesh 130 is arranged along the extending direction of the electrode core 110, and is fitted on the outside of the plurality of electrode tubes 120. In this manner, the electrode core 110, the plurality of electrode tubes 120, and the electrode mesh 130 form a long electrode assembly 100, which extends into the buffer chamber 220 to easily generate a high-frequency electric field, and thus excites the process gas introduced into the buffer chamber 220 to generate plasma, which enters the process chamber 210 from the buffer chamber 220 to realize a process reaction.

[0016] Optionally, the length of the electrode tube 120 is 8mm to 16mm, including 8mm, 10mm, 12mm, 14mm, 16mm, etc., and may of course be other dimensions. Note that if the length of the electrode tube 120 is too long, it is disadvantageous to the installation of the electrode assembly 100, and if the length of the electrode tube 120 is too short, the processing cost increases, so that when designing and manufacturing the electrode tube 120, the installation requirements and cost requirements need to be considered comprehensively.

[0017] In order for the electrode assembly 100 to easily penetrate the side wall of the process pipe 200 and extend into the buffer chamber 220, the electrode core 110 in the embodiment of the present application is made of a soft material, which allows the electrode core 110 to deform. This makes it possible for the electrode assembly 100 to adapt to the installation environment by deforming, and makes it easier to reduce the difficulty of installing the electrode assembly 100.

[0018] Considering that the soft electrode core 110 is likely to affect the service life of the electrode assembly 100, it is necessary to provide the electrode assembly 100 with sufficient strength in order to extend the service life of the electrode assembly 100. Based on this, the electrode tubes 120 are sequentially fitted on the outside of the electrode core 110 along the extension direction of the electrode core 110, so that the electrode core 110 can be supported and protected through the electrode tubes 120, the strength of the entire electrode assembly 100 can be improved, and the change in length of the electrode assembly 100 during use can be reduced.

[0019] Furthermore, the number of electrode tubes 120 can be determined based on the overall length of the electrode assembly 100. If the required length of the electrode assembly 100 is large, the electrode core 110 is long, in which case more electrode tubes 120 need to be fitted around the outside of the electrode core 110. If the required length of the electrode assembly 100 is small, the electrode core 110 is short, in which case fewer electrode tubes 120 need to be fitted around the outside of the electrode core 110.

[0020] In order to make the entire electrode assembly 100 deformable, a preset gap is provided between two adjacent electrode tubes 120. The preset gap allows a certain amount of space to be provided between the two adjacent electrode tubes 120, thereby making it difficult for the electrode assembly 100 to deform and cause interference, and ensuring the overall flexibility of the electrode assembly 100. A preferred preset gap is 30 to 40 mm, including 30 mm, 32 mm, 35 mm, 38 mm, 40 mm, etc. At the same time, each electrode tube 120 can improve the local strength of the electrode assembly 100, thereby providing a protective effect for the electrode core 110 and also mitigating changes in the length of the electrode core 110.

[0021] By fitting the electrode mesh 130 on the outside of the multiple electrode tubes 120, the difference in electric field strength caused by the pre-set gap between two adjacent electrode tubes 120 can be compensated for, thereby allowing the plasma to be distributed more uniformly in the direction of the electrode assembly 100.

[0022] Based on the above installation, optionally, the buffer chambers 220 may be multiple, and the multiple buffer chambers 220 are distributed along the circumferential direction of the process pipe 200, and all of them are connected to the process chamber 210, and each buffer chamber 220 is provided corresponding to at least one group of electrodes.

[0023] In an embodiment of the present application, multiple buffer chambers 220 are provided and an electrode assembly 100 is installed corresponding to each buffer chamber 220, so that process gas can be excited simultaneously in the multiple buffer chambers 220. Compared with a single buffer chamber, the multiple buffer chambers 220 are advantageous in improving process uniformity.

[0024] By using multiple electrode assemblies 100 to excite the process gas in multiple buffer chambers 220 to form plasma, the power consumption of each electrode assembly 100 can be reduced under the same process conditions, which is advantageous in extending the service life of the electrode assemblies 100.

[0025] In the embodiments of the present application, the number of buffer chambers 220 used can be flexibly adjusted according to different process requirements, thereby avoiding the situation where energy consumption increases due to an inappropriate number of buffer chambers 220 used, and achieving a certain degree of energy saving and emission reduction effects.

[0026] In some optional embodiments, the semiconductor process equipment further includes a plurality of intake pipes 600, which extend through the side wall of the process pipe 200 into the plurality of buffer chambers 220 in a one-to-one correspondence, and are used to introduce process gas into the corresponding buffer chambers 220 to meet the requirements for the process gas; and the electrode assembly 100 can form a high-frequency electric field in the buffer chambers 220, so that the process gas introduced into each buffer chamber 220 through the intake pipe 600 is excited into a plasma state under the action of the high-frequency electric field to generate plasma, and the plasma enters the inner cavity of the process pipe 200 from the buffer chambers 220 to facilitate participating in the process reaction.

[0027] An exhaust port 230 is provided on the side wall of the process pipe 200, which is connected to the process chamber 210 and is used to exhaust the gas in the process chamber 210. In each process step, the process exhaust gas generated in the process chamber 210 can be exhausted through the exhaust port 230, so as to prevent the gas pressure in the process chamber 210 from being too high.

[0028] After the process gas is involved in the reaction, it forms an exhaust gas due to the reaction in the process chamber 210, and the exhaust gas due to the reaction can be discharged through the exhaust port 230, so as to maintain the basic balance of the air pressure in the process chamber 210. Optionally, the exhaust port 230 can be connected to an external vacuum device through an exhaust pipe, which facilitates discharging the exhaust gas due to the reaction in the process chamber 210 through the vacuum device, and a certain vacuum degree can be generated in the process chamber 210 through the action of the vacuum device.

[0029] Compared with some current plasma generating devices that have multiple layers of nickel mesh structure woven on the outside of the electrodes, the semiconductor processing device in the embodiment of the present application uses a new electrode assembly 100, which can support and protect the deformable electrode core 110 by multiple electrode tubes 120, thereby improving the strength of the entire electrode assembly 100, making the electrode assembly 100 less likely to change in length due to gravity, and further increasing the service life of the electrode assembly 100, and preventing the electrode assembly 100 from affecting the uniformity of the plasma. At the same time, the electrode assembly 100 in the embodiment of the present application does not have multiple layers of nickel mesh on the outside of the electrode core 110, but instead inserts multiple electrode tubes 120 in sequence along the extension direction of the electrode core 110 on the outside of the electrode core 110, and inserts an electrode mesh 130 on the outside of the multiple electrode tubes 120, thereby reducing the amount of nickel mesh used and eliminating the need to install multiple layers of nickel mesh, thereby reducing the manufacturing cost and difficulty of the electrode assembly 100.

[0030] In some embodiments, each electrode assembly 100 may include a plurality of electrode cores 110, each of which is inserted into a plurality of electrode tubes 120, and each of the electrode cores 110 is fixedly connected to the inner walls of the electrode tubes 120, respectively. As a result, the electrode cores 110 can be supported and protected by the plurality of electrode tubes 120, and the strength of the electrode assembly 100 can be improved while ensuring the flexibility of the electrode assembly 100 as a whole, thereby extending the service life of the electrode assembly 100; and, since each of the plurality of electrode cores 110 is connected to the inner walls of the respective electrode tubes 120, the connection between two adjacent electrode tubes 120 can be made more solid and stable, ensuring the service life of the electrode assembly 100.

[0031] Optionally, the electrode core 110 can be fixed to the inner wall of the electrode tube 120 by welding, adhesive, or the like, thereby improving the robustness of the connection between the electrode core 110 and the inner wall of the electrode tube 120 and further extending the service life of the electrode assembly 100.

[0032] In a more specific embodiment, the electrode assembly 100 may include two electrode cores 110, which are fixedly connected to opposite sides of the inner wall of the electrode tube 120, respectively, and in this manner, opposite sides of the inner wall of each electrode tube 120 can be fixedly connected, making the force received by the electrode tubes 120 more uniform, thereby ensuring the stability of the connection between two adjacent electrode tubes 120. Of course, the electrode assembly 100 may include other numbers of electrode cores 110, and the number of electrode cores 110 is not particularly limited in the embodiment of the present application.

[0033] The electrode core 110 may be a nickel wire, which has a relatively small diameter and is relatively flexible, facilitating the free deformation of the electrode assembly 100. Of course, the electrode core 110 may adopt other materials and other shapes, and the embodiments of the present application do not specifically limit the material and shape of the electrode core 110.

[0034] The electrode tube 120 may be a nickel tube, the diameter of which is larger than the diameter of the nickel wire, and the nickel tube is hard, making it easy to support and protect the electrode core 110 inserted therein, thereby mitigating the problem of the electrode core 110 changing in length and affecting its service life. Of course, the electrode tube 120 may be made of other materials, and the material of the electrode tube 120 is not specifically limited in the embodiments of the present application.

[0035] The electrode mesh 130 may be a nickel mesh. When the outer size of the electrode assembly 100 is the same, the electrode tube 120 is installed outside the electrode core 110, and the electrode mesh 130 is fitted outside the electrode tube 120. This does not require the weaving of multiple layers of nickel mesh, and only requires a thin nickel mesh layer, such as a single layer of nickel mesh. This method can reduce the amount of nickel used, thereby reducing the manufacturing cost and difficulty. Of course, the electrode mesh 130 may be made of other materials, and the material of the electrode mesh 130 is not specifically limited in the embodiments of the present application.

[0036] In some embodiments, two buffer chambers 220 are formed inside the process pipe 200, and the two buffer chambers 220 are symmetrically disposed on both sides of the exhaust port 230. Based on this, the process gas is excited into a plasma state through the electrode assemblies 100 in the two buffer chambers 220, respectively, to form plasma, which then flows into the process chamber 210 through the two buffer chambers 220, respectively, thereby improving the uniformity of the plasma in the process chamber 210 and improving the film formation quality of the process product.

[0037] Naturally, multiple buffer chambers 220 may be further provided symmetrically distributed on both sides of the exhaust port 230 in the circumferential direction of the process pipe 200. In this way, by increasing the number of buffer chambers 220 and evenly distributing the multiple buffer chambers 220 around the process chamber 210, it is easier to form a more uniform plasma atmosphere in the process chamber 210, and further improve the uniformity of the film thickness.

[0038] In the embodiment of the present application, a plurality of through holes are provided on the side of each buffer chamber 220 away from the process pipe 200, and the plurality of through holes are arranged along the axial direction of the process pipe 200 to communicate the buffer chamber 220 with the process chamber 210. Based on this, the flow area of ​​the process gas in the axial direction of the process pipe 200 can be enlarged, so that the distribution of the process gas in the process chamber 210 can be made more uniform, and the film formation quality of the process product can be improved.

[0039] In some embodiments, the semiconductor processing apparatus may further include a protective tube group, which includes at least one protective tube 300, which extends through the side wall of the process pipe into the buffer chamber 220, and at least one electrode assembly 100 in the electrode group is inserted through the protective tube 300. In addition, optionally, the number of groups of the protective tube group is the same as the number of groups of the electrode group, and the two are provided in a one-to-one correspondence. Based on this, by inserting at least one electrode assembly 100 into the protective tube 300, on the one hand, the electrode assembly 100 can be mounted and guided through the protective tube 300, and the end of the electrode assembly 100 can extend into the buffer chamber 220, and on the other hand, the protective tube 300 can also prevent contaminants from entering the process chamber 210, thereby playing a protective role for the electrode assembly 100.

[0040] Optionally, the protective tube 300 may be a quartz tube, etc. Also, the protective tube 300 may be fixed to the process pipe 200 by welding, gluing, fastening, screwing, etc., to ensure the robustness and stability of the connection between the protective tube 300 and the process pipe 200.

[0041] In a more specific embodiment, one group of protective tubes 300 may include two protective tubes 300, and the two electrode assemblies 100 in one electrode group are respectively inserted into the two protective tubes 300, and the two electrode assemblies 100 in the same electrode group are respectively connected to the positive and negative poles of the RF power source. Based on this, the two electrode assemblies 100 in each electrode group can be respectively mounted and protected through the two protective tubes 300.

[0042] In addition, when the electrodes are attached, the lengths of the two electrode assemblies 100 in each electrode group within the two protective tubes 300 are made as equal as possible to ensure uniformity of the generated electric field. In addition, the lengths of the cables connected to the RF power sources of the two electrode assemblies 100 are made as equal as possible to ensure phase consistency of the two electric fields generated by the two electrode assemblies 100.

[0043] In order to fix and seal the electrode assembly 100 and the protective tube 300 relative to one another and connect the electrode assembly 100 to an RF power source, the semiconductor processing apparatus may further include a first connection assembly 400 and a second connection assembly 500 provided corresponding to each electrode assembly 100. The first connection assembly 400 is fitted onto the outside of the protective tube 300 and the second connection assembly 500 and is hermetically connected to the protective tube 300 and the second connection assembly 500, respectively. One end of the second connection assembly 500 is connected to the electrode assembly 100, and the other end of the second connection assembly 500 is connected to the RF power source. Based on this, the electrode assembly 100 can be attached to the protective tube 300 via the first connection assembly 400 and the space between the electrode assembly 100 and the protective tube 300 can be sealed, and the electrode assembly 100 can be electrically connected to the RF cable via the second connection assembly 500 and the space between the electrode assembly 100 and the first connection assembly 400 can be sealed, thereby protecting the connection point between the second connection assembly 500 and the electrode assembly 100 and preventing oxidation of the electrode assembly 100.

[0044] In order to further improve the robustness and stability of the connection between the first connection assembly 400 and the protective tube 300 and to improve the robustness and stability of the installation of the electrode assembly 100, the semiconductor process equipment may further include a support block 700, which is fixed to a water-cooled press ring (not shown) of the semiconductor process equipment with screws, and the top of the support block 700 abuts against the first connection assembly 400 to provide support for the first connection assembly 400. In this way, the engagement between the support block 700 and the protective tube 300 realizes stable installation of the first connection assembly 400, thereby improving the robustness and stability of the installation of the electrode assembly 100.

[0045] In some embodiments, the first connection assembly 400 may include an electrode holder 410, a first locking member 420, and a second locking member 430, in which the electrode holder 410 has a through-chamber 411, one end of the electrode assembly 100 is disposed in the through-chamber 411, at least a portion of the second connection assembly 500 is disposed in the through-chamber 411 and connected to the electrode assembly 100, the electrode holder 410 is connected to the protective tube 300 via the first locking member 420, and the second connection assembly 500 is hermetically connected to the electrode holder 410 via the second locking member 430. Based on this, the assembly of the first connection assembly 400 and the second connection assembly 500 can be realized, and the hermeticity of the assembly of the two can be ensured.

[0046] In order to attach the first connection assembly 400 to the protective tube 300, the first locking member 420 may be provided at one end of the protective tube 300 away from the process pipe 200, and when the first connection assembly 400 needs to be attached, the first connection assembly 400 can be attached to the protective tube 300 by simply connecting the electrode holder 410 to the first locking member 420.

[0047] Optionally, the first locking member 420 is provided with an escape hole, and the first locking member 420 may be regarded as a nut, which is fitted into the outer wall of the protective tube 300 through the escape hole and fixedly connected to the protective tube 300. Naturally, the first locking member 420 may be movably fitted into the outside of the protective tube 300, and a separation part may be provided on the outside of the protective tube 300 to prevent the first locking member 420 from being separated from the protective tube 300. Based on this, the stability of the attachment between the first connection assembly 400 and the protective tube 300 can be ensured.

[0048] Optionally, the first locking member 420 may be connected to one end of the electrode holder 410 with a screw, thereby allowing the first connection assembly 400 to removably attach the protective tube 300, making it easier to attach and detach the electrode holder 410, and further easier to replace or maintain the electrode assembly 100.

[0049] Based on the above installation, when it is necessary to remove the electrode assembly 100, the electrode holder 410 and the electrode assembly 100 can be removed together by simply separating the electrode holder 410 and the first locking member 420, making it easy to replace or maintain the electrode assembly 100.

[0050] Considering that one end of the second connection assembly 500 is located within the through-chamber 411 and connected to the electrode assembly 100, and the other end is connected to an external RF cable, based on this, an escape hole is provided in the second locking member 430, and the other end of the second connection assembly 500 extends outside the through-chamber 411, thereby making it easy to connect the second connection assembly 500 to an external RF cable.

[0051] Optionally, a screw connection may be adopted between the second locking member 430 and the other end of the electrode holder 410, and the second locking member 430 may be regarded as a nut, which facilitates attachment and detachment. On this basis, when there is no need to attach or detach the second connection assembly 500, the second locking member 430 is fastened to the other end of the electrode holder 410, in this case, the second locking member 430 can firmly fix the second connection assembly 500 to the electrode holder 410, preventing the second connection assembly 500 and the electrode assembly 100 from being separated and affecting the transmission energy; when there is a need to attach or detach the second connection assembly 500, the second locking member 430 is simply removed from the electrode holder 410 to release the stopper effect on the second connection assembly 500, in this case, the second connection assembly 500 can be removed, which facilitates attachment and detachment of the second connection assembly 500 and improves the efficiency of replacement or maintenance of the second connection assembly 500.

[0052] In addition, since the connection point between the electrode assembly 100 and the second connection assembly 500 is located inside the through-chamber 411, the connection point between the two can be protected through the electrode holder 410, preventing interference from external factors.

[0053] In some embodiments, the semiconductor processing apparatus may further include a protective gas pipeline (not shown), in which a protective gas inlet 450 is opened in the side wall of the through chamber 411, and two protective tubes 300 in the same protective tube group are sealed and connected to the corresponding buffer chamber 220, and the protective gas pipeline is connected to the inside of the protective tube 300 through the protective gas inlet 450 and used for introducing protective gas.

[0054] Based on the above installation, external protective gas (i.e., antioxidant gas) can be introduced into the through chamber 411 through the protective gas inlet 450, introduced into the buffer chamber 220 through one of the protective tubes 300, and discharged from another protective tube 300, thereby realizing a circulating flow of the protective gas, and thereby effectively alleviating the problem of transmission instability caused by oxidation of the electrode assembly 100.

[0055] In order to realize a stable connection between the electrode assembly 100 and the second connection assembly 500, the second connection assembly 500 may include an electrode terminal 510 and a fastener 520, in which a first connection end 511 located in the through-chamber 411 of the electrode terminal 510 is provided with a first mounting hole, and a second connection end 140 located in the through-chamber 411 of the electrode assembly 100 is provided with a second mounting hole. When mounted, the first connection end 511 and the second connection end 140 are connected to each other by overlapping each other, and the fastener 520 passes through the first mounting hole and the second mounting hole in order to fasten and connect the first connection end 511 and the second connection end 140.

[0056] Based on the above installation, the fastener 520 is inserted into the first mounting hole and the second mounting hole, thereby preventing the first connecting end 511 and the second connecting end 140 from shifting relative to each other, thereby effectively preventing the first connecting end 511 and the second connecting end 140 from coming off from each other.

[0057] Further, the second connection assembly 500 may include a gasket 530, in which a third mounting hole is provided, the gasket 530 is provided on a side of the second connecting end 140 away from the first connecting end 511, the first mounting hole, the second mounting hole and the third mounting hole are provided coaxially, and the fastener 520 is inserted through the first mounting hole, the second mounting hole and the third mounting hole to press the second connecting end 140 against the first connecting end 511 through the gasket 530, so that the second connecting end 140 and the first connecting end 511 are pressed against each other, which can further ensure good contact between the first connecting end 511 and the second connecting end 140 and avoid the occurrence of a temporary connection situation.

[0058] Based on the above installation, the embodiment of the present application can not only ensure the robustness and stability of the connection between the first connection end 511 and the second connection end 140, but also effectively avoid the occurrence of a temporary connection situation, thereby realizing stable transmission of electrical energy between the electrode assembly 100 and the second connection assembly 500, and without causing loss of electrical energy.

[0059] Optionally, the first connecting end 511 and the second connecting end 140 may both have a flat structure, so as to increase the contact area therebetween and further improve the stability of the connection.

[0060] In order to prevent external factors from entering the through chamber 411 and affecting the connection point between the electrode assembly 100 and the second connection assembly 500, in some embodiments, a first sealing member 440 may be provided between the first locking member 420 and the electrode holder 410, and the first sealing member 440 seals the gap between the first locking member 420 and the electrode holder 410.

[0061] In addition, a second sealing member 440' may be provided between the second locking member 430 and the electrode holder 410, and the gap between the second locking member 430 and the electrode holder 410 can be sealed by the second sealing member 440'.

[0062] Based on the above installation, the first sealing member 440 and the second sealing member 440' can achieve sealing of the through-chamber 411 when the first locking member 420 is locked to the electrode holder 410 and when the second locking member 430 is locked to the electrode holder 410, thereby preventing external impurities, etc. from entering the through-chamber 411 and affecting the connection point between the electrode assembly 100 and the second connection assembly 500, and ensuring the stability and reliability of the connection between the electrode assembly 100 and the second connection assembly 500.

[0063] Optionally, the first sealing member 440 and the second sealing member 440' may both be sealing rings fitted onto both ends of the electrode holder 410, respectively, to prevent the electrode assembly 100 and the second connection assembly 500 from extending outside the through chamber 411.

[0064] The operating principle of the semiconductor processing device in the embodiment of the present application is as follows.

[0065] An external RF source transmits energy to the electrode assembly 100 via an RF cable, which generates a high-frequency electric field in the buffer chamber 220 via the electrode assembly 100. Then, the process gas is introduced into the buffer chamber 220 via the process gas pipe and the intake pipe 600. The process gas is excited by the high-frequency electric field in the buffer chamber 220 and turns into a plasma state to generate plasma. The plasma then enters the process chamber 210 from the buffer chamber 220 and participates in the reaction, thereby achieving the process step.

[0066] As described above, in the embodiments of the present application, by improving and optimizing the structure of the electrode assembly 100, the use of high-value materials (e.g., nickel) can be reduced, thereby reducing the cost and complexity of the electrode assembly 100; by optimizing the electrode structure, the strength of the electrode assembly 100 can be improved while ensuring the flexibility of the entire electrode assembly 100, thereby extending the service life of the electrode assembly 100 and improving the reliability of the electrode assembly 100.

[0067] By optimizing the layout of the buffer chamber 220 and improving the uniformity of the distribution of the high frequency electric field, the uniformity of the plasma in the process chamber 210 can be improved, thereby improving the process performance and ensuring the uniformity of the film thickness.

[0068] Although the embodiments of the present application have been described above with reference to the drawings, the present application is not limited to the above specific embodiments, which are merely illustrative and not limiting. Those skilled in the art may adopt many more forms under the guidance of the present application without departing from the spirit and scope of the claims of the present application, and all of them fall within the scope of protection of the present application.

Claims

1. A process pipe and an electrode group, A process chamber and a buffer chamber are formed inside the process pipe, the buffer chamber is connected to the process chamber, and the buffer chamber is provided corresponding to at least one group of the electrodes, one end of the electrode group of each group extends through the process chamber into the buffer chamber, and the other end of the electrode group of each group is used for connecting to an RF power source; each of the electrode groups includes two electrode assemblies, each of the two electrode assemblies is used to connect to a positive electrode and a negative electrode of the RF power source, each of the electrode assemblies includes a deformable electrode core, a plurality of electrode tubes, and an electrode mesh, the plurality of electrode tubes are arranged in sequence along an extension direction of the electrode core, with a predetermined gap between two adjacent electrode tubes, the electrode core is inserted into the plurality of electrode tubes and connected to the plurality of electrode tubes respectively, and the electrode mesh is arranged along the extension direction of the electrode core and fitted around the outside of the plurality of electrode tubes.

2. Each of the electrode assemblies includes a plurality of the electrode cores, 2. The semiconductor processing apparatus according to claim 1, wherein the plurality of electrode cores are all inserted into the plurality of electrode tubes, and each of the electrode cores is fixedly connected to an inner wall of each of the plurality of electrode tubes.

3. the electrode core is a nickel wire; and / or the electrode tube is a nickel tube; and / or 2. The semiconductor processing device according to claim 1, wherein said electrode mesh is a nickel mesh.

4. 4. The semiconductor process device according to claim 1, wherein the buffer chamber is provided in a plurality of locations, the plurality of buffer chambers being distributed along a circumferential direction of the process pipe, each of the buffer chambers being connected to the process chamber, and each of the buffer chambers being provided corresponding to at least one of the electrode groups.

5. 5. The semiconductor processing apparatus of claim 4, further comprising a plurality of intake pipes, each of which extends through a side wall of the process pipe into a corresponding one of the buffer chambers and is used to introduce process gas into the corresponding buffer chamber; and an exhaust port is provided on the side wall of the process pipe, the exhaust port is connected to the process chamber, and is used to exhaust gas in the process chamber.

6. 6. The semiconductor process apparatus according to claim 5, wherein the buffer chamber is provided in two positions, the two buffer chambers being symmetrically disposed on either side of the exhaust port, each of the buffer chambers being provided with a plurality of through holes on a side remote from the process pipe, the plurality of through holes being arranged along an axial direction of the process pipe and being used to communicate the buffer chamber with the process chamber.

7. 4. The semiconductor process apparatus according to claim 1, further comprising a protective tube group, the protective tube group including at least one protective tube, the protective tube penetrating a side wall of the process pipe and extending into the buffer chamber, and at least one of the electrode assemblies in the electrode group being inserted through the protective tube.

8. 8. The semiconductor process device according to claim 7, wherein the protective tube group includes two of the protective tubes, and the two electrode assemblies in the electrode group are respectively inserted into the two protective tubes.

9. The semiconductor process device further includes a first connection assembly and a second connection assembly provided corresponding to each of the electrode assemblies; 9. The semiconductor processing apparatus of claim 8, wherein the first connection assembly is fitted around the outside of the protective tube and the second connection assembly and is hermetically connected to the protective tube and the second connection assembly, one end of the second connection assembly is connected to the electrode assembly, and the other end of the second connection assembly is connected to the RF power source.

10. the first connection assembly includes an electrode holder, a first locking member and a second locking member; The electrode holder has a through chamber, one end of the electrode assembly is disposed within the through chamber, and at least a portion of the second connection assembly is disposed within the through chamber and connected to the electrode assembly; 10. The semiconductor process apparatus of claim 9, wherein the electrode holder is hermetically connected to the protective tube via the first locking member, and the second connection assembly is hermetically connected to the electrode holder via the second locking member.

11. the second connection assembly includes an electrode terminal and a fastener; A first mounting hole is provided at a first connection end of the electrode terminal located in the through chamber, and a second mounting hole is provided at a second connection end of the electrode assembly located in the through chamber; 11. The semiconductor processing device of claim 10, wherein the first connection end and the second connection end are connected to each other by stacking them, and the fastener passes through the first mounting hole and the second mounting hole in order to fasten and connect the first connection end and the second connection end.

12. A first sealing member is provided between the first locking member and the electrode holder, and the first sealing member is used to seal a gap between the first locking member and the electrode holder; and / or 11. The semiconductor processing apparatus of claim 10, further comprising a second sealing member disposed between the second locking member and the electrode holder, the second sealing member being used to seal a gap between the second locking member and the electrode holder.

13. a protective gas line; 11. The semiconductor process apparatus according to claim 10, wherein a protective gas inlet is opened in a side wall of the through chamber, two of the protective tubes in the same protective tube group are sealed and connected in the corresponding buffer chamber, and the protective gas pipeline is connected to the inside of the protective tube via the protective gas inlet and is used to introduce a protective gas.

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