Crystal manufacturing apparatus and crystal manufacturing method

Abstract

A crystal manufacturing apparatus (100) and a crystal manufacturing method are disclosed. The crystal manufacturing apparatus (100) includes a growth chamber (110) for accommodating a raw material, a heating assembly (120) for heating the growth chamber (110), a lifting assembly (130) for lifting and growing, and a guide assembly (140) transmission-connected to the lifting assembly (130). The crystal manufacturing method includes a step (S910) of disposing a raw material in the growth chamber (110), a step (S920) of lowering a lifting assembly (130) to which a seed crystal is adhered near the raw material, wherein the lifting assembly (130) is transmission-connected to the guide assembly (140) and is at least partially located within the guide assembly (140), a step (S930) of heating the growth chamber (110) to form a raw material melt, and a step (S940) of growing a crystal based on the seed crystal and the raw material melt by the transmission movement of the lifting assembly (130) and the guide assembly (140).

Description

Technical Field

[0001] This specification relates to the technical field of crystal manufacturing, and particularly to an apparatus and method for manufacturing crystals based on the liquid phase method.

Background Art

[0002] When manufacturing crystals (e.g., silicon carbide) based on the liquid phase method (e.g., the top-seeded solution method (TSSG)), some components in the raw materials (e.g., silicon) are likely to volatilize at high temperatures, which easily causes segregation of the melt components, spontaneous nucleation on the seed crystal surface or the melt surface, etc. Also, since the liquid level of the melt changes during the pulling-up growth process, the temperature field changes, affecting the normal growth of the crystal. Therefore, in order to ensure the normal growth of the crystal, it is necessary to provide an improved apparatus and method for manufacturing crystals.

Summary of the Invention

Means for Solving the Problems

[0003] One embodiment of this specification provides a crystal manufacturing apparatus. The crystal manufacturing apparatus includes a growth chamber for accommodating raw materials, a heating assembly for heating the growth chamber, a pulling-up assembly for pulling up and growing, and a guide assembly transmission-connected to the pulling-up assembly.

[0004] In some embodiments, the guide assembly includes a cylinder, and the pulling-up assembly is at least partially located inside the cylinder.

[0005] In some embodiments, the diameter of the cylinder gradually increases along the direction from the bottom to the top of the cylinder.

[0006] In some embodiments, the thickness of the cylinder is in the range of 1 mm to 3 mm.

[0007] In some embodiments, the angle between the side wall of the cylinder and the horizontal plane is within the range of 100° to 140°.

[0008] In some embodiments, through holes are provided in the side wall of the cylinder.

[0009] In some embodiments, the diameter of the through holes is within the range of 0.5 mm to 2 mm.

[0010] In some embodiments, the distance between the through holes and the bottom of the cylinder is within the range of 3 mm to 10 mm.

[0011] In some embodiments, the density of the through holes is within the range of 3 holes / cm2 to 10 holes / cm2.

[0012] In some embodiments, graphite paper is provided at the bottom of the cylinder.

[0013] In some embodiments, the thickness of the graphite paper is within the range of 100 μm to 300 μm.

[0014] In some embodiments, the guide assembly further includes a transmission mechanism transmission-connected to the cylinder to realize the up and down movement of the cylinder.

[0015] In some embodiments, the transmission mechanism includes the top side wall of the cylinder, a connection link located in the lifting assembly, a connection member connected to the connection link, a rotating shaft located on a bracket above the growth chamber and connected to the connection member, and a stopper located on the connection member and cooperating with the rotating shaft to prevent the movement of the connection member.

[0016] In some embodiments, the device further includes a support assembly for supporting the growth chamber, a drive assembly for driving the up and down movement of the support assembly, and a temperature measurement assembly for measuring the temperature in the growth chamber.

[0017] One embodiment of the present specification also provides a temperature measuring device. The temperature measuring device includes a support assembly for supporting a growth chamber, a drive assembly for driving the vertical movement of the support assembly, and a temperature measuring assembly for measuring the temperature inside the growth chamber.

[0018] One embodiment of the present specification further provides a crystal manufacturing method. The crystal manufacturing method includes the steps of placing a raw material in a growth chamber, lowering a pulling assembly to which a seed crystal is adhered near the raw material, wherein the pulling assembly is transmission-connected to a guide assembly and at least partially located inside the guide assembly, heating the growth chamber to form a raw material melt, and growing a crystal based on the seed crystal and the raw material melt by the transmission movement of the pulling assembly and the guide assembly.

[0019] In some embodiments, the guide assembly includes a cylinder, the pulling assembly to which the seed crystal is adhered is at least partially located inside the cylinder, and through holes are provided on the side wall of the cylinder.

[0020] In some embodiments, during the process of melting the raw material to form the raw material melt, the seed crystal is located below the through holes.

[0021] In some embodiments, during the process of growing a crystal based on the seed crystal and the raw material melt, at least some of the through holes are located in the raw material melt.

[0022] In some embodiments, the step of growing a crystal based on the seed crystal and the raw material melt by the transmission movement of the pulling assembly and the guide assembly includes controlling the pulling speed of the pulling assembly to maintain the liquid level of the raw material melt constant, thereby controlling the immersion speed and / or immersion amount of the cylinder in the raw material melt.

[0023] This specification is further illustrated by exemplary embodiments, which are described in detail by the drawings. These embodiments are not limiting, and in these embodiments, the same numbers represent the same structures.

Brief Description of the Drawings

[0024]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Modes for Carrying Out the Invention

[0025] To more clearly explain the technical means of the embodiments of this specification, the drawings necessary for the description of the embodiments will be briefly described below. Obviously, the drawings described below are only some examples or embodiments of this specification, and those skilled in the art can apply this specification to other similar situations based on these drawings without creative labor. Unless it is clear from the context or otherwise stated, the same numbers in the figures represent the same structure or operation.

[0026] It should be understood that the "system", "device", "unit" and / or "module" used in this specification is a way to distinguish various assemblies, parts, components, parts or assemblies at different levels. However, if other terms can achieve the same purpose, other expressions can be used instead of the above terms.

[0027] As shown in this specification and the claims, unless the context clearly indicates otherwise, terms such as "one", "a", "a kind" and / or "the" do not particularly mean the singular form and may include the plural form. Generally, the terms "include" and "contain" merely present including the specifically identified steps and elements, and these steps and elements are not an exclusive listing, and the method or device may also contain other steps or elements.

[0028] FIG. 1 is a schematic configuration diagram of an exemplary crystal manufacturing apparatus according to some embodiments of this specification.

[0029] In some embodiments, the crystal manufacturing apparatus 100 can manufacture crystals (for example, silicon carbide) based on the liquid phase method. Hereinafter, taking the manufacture of silicon carbide crystals as an example, the crystal manufacturing apparatus 100 according to the embodiments of the specification will be described in detail with reference to the drawings. It should be noted that the following embodiments are only for interpreting this specification and do not limit this specification.

[0030] As shown in FIG. 1, the crystal manufacturing apparatus 100 may include a growth chamber 110, a heating assembly 120, a pulling assembly 130, and a guide assembly 140.

[0031] The growth chamber 110 can function as a place for manufacturing crystals. The heating assembly 120 is used to heat the growth chamber 110 to provide the heat (e.g., temperature, temperature field, etc.) necessary for crystal manufacturing.

[0032] In some embodiments, the material of the growth chamber 110 may be determined according to the type of crystal to be manufactured. For example, when manufacturing a silicon carbide crystal, the material of the growth chamber 110 may include graphite. Graphite can provide the carbon necessary for the manufacture of silicon carbide crystals as a carbon source. In some embodiments, the material of the growth chamber 110 may include molybdenum, tungsten, tantalum, etc. In some embodiments, the raw materials (e.g., silicon powder, carbon powder) necessary for crystal manufacturing may be accommodated in the growth chamber 110. In some embodiments, the growth chamber 110 may be a place for melting the raw materials to form a melt. For example, under the high temperature generated by the heating assembly 120, the silicon powder melts into a melt, and the carbon provided by the growth chamber 110 itself melts into the silicon solution to form a solution containing carbon and silicon, which is used as a liquid raw material for manufacturing silicon carbide crystals by the liquid phase method. In some embodiments, a flux (e.g., aluminum alloy, silicon chromium alloy, Li-Si alloy, Ti-Si alloy, Fe-Si alloy, Sc-Si alloy, Co-Si alloy, etc.) may be added to the raw materials to improve the solubility of carbon in silicon.

[0033] In some embodiments, the heating assembly 120 may include an induction heating assembly, a resistance heating assembly, etc. In some embodiments, the heating assembly 120 may be disposed around the outer periphery of the growth chamber 110. In some embodiments, as shown in FIG. 1, the heating assembly 120 may include an induction coil. In some embodiments, the induction coil may be disposed around the outer periphery of the growth chamber 110.

[0034] In some embodiments, the lifting assembly 130 can move up and down and / or rotate to perform lift-off growth. In some embodiments, as shown in FIG. 1, the lifting assembly 130 may include a seed crystal holder 131 and a lifting rod 132. In some embodiments, a seed crystal (e.g., denoted as "A" in FIG. 1) may be adhered to the lower surface of the seed crystal holder 131. In some embodiments, the lifting rod 132 may be connected to the seed crystal holder 131 to drive the up-and-down movement and / or rotation of the seed crystal holder 131.

[0035] In some embodiments, the guide assembly 140 may be transmission-connected to the lifting assembly 130. In some embodiments, the guide assembly 140 and the lifting assembly 130 may perform transmission movement. For the related description of the lifting assembly 130 and the guide assembly 140, reference can be made to other parts of this specification (e.g., FIG. 2 and its description), so the description is omitted here.

[0036] In some embodiments, the crystal manufacturing apparatus 100 may further include a power assembly (not shown), and the power assembly drives the rotation and / or up-and-down movement of the lifting assembly 130 to drive the rotation and / or up-and-down movement of the seed crystal holder 131 or the seed crystal A to grow the crystal. In some embodiments, the power assembly may include a power drive device, a hydraulic drive device, a pneumatic drive device, etc. or any combination thereof, but is not limited thereto, and this specification does not limit this.

[0037] In some embodiments, the crystal manufacturing apparatus 100 may further include a heat insulation assembly 150 that insulates the growth chamber 110. In some embodiments, the heat insulation assembly 150 may be provided around the outer periphery of the growth chamber 110. In some embodiments, the material of the heat insulation assembly 150 may include quartz (silicon oxide), corundum (aluminum oxide), zirconium oxide, carbon fiber, ceramics, etc., or other high temperature resistant materials (for example, borides, carbides, nitrides, silicides, phosphorus compounds, and sulfur compounds of rare earth metals, etc.).

[0038] In some embodiments, the crystal manufacturing apparatus 100 may further include a furnace body 160. In some embodiments, the furnace body 160 may be provided outside the growth chamber 110, the heating assembly 120, and the heat insulation assembly 150.

[0039] In some embodiments, as shown in FIG. 1, through holes are provided at the upper parts of the growth chamber 110, the heat insulation assembly 150, and the furnace body 160 so that the lifting assembly 130 and / or the guide assembly 140 can pass through and rotate and / or move up and down.

[0040] In some embodiments, the crystal manufacturing apparatus 100 may further include an observation assembly 170 (for example, an observation window). The crystal growth situation in the growth chamber 110 can be observed in real time by the observation assembly 170. In some embodiments, as shown in FIG. 1, the observation assembly 170 may be located on the upper wall of the furnace body 160.

[0041] In some embodiments, the crystal manufacturing apparatus 100 may further include a detection assembly 180. In some embodiments, the detection assembly 180 may be used to monitor crystal growth-related information (e.g., temperature information, the lifting speed and / or rotation speed of the lifting assembly 130, the liquid level position information, the appearance of the crystal (e.g., dimensions)). In some embodiments, the detection assembly 180 may be located on the upper wall of the furnace body 160. In some embodiments, the detection assembly 180 may include a temperature detection member, a speed detection member, a liquid level sensor (e.g., a radar sounding rod, a radar liquid level gauge), an image acquisition device, and the like.

[0042] In some embodiments, the temperature detection member may be used to measure the temperature information within the growth chamber 110. In some embodiments, the temperature detection member may include an infrared thermometer, a photoelectric pyrometer, an optical fiber radiation thermometer, a colorimetric thermometer, an ultrasonic thermometer, or the like, or any combination thereof.

[0043] In some embodiments, the speed detection member may be used to measure the lifting speed (e.g., the rising speed, the descending speed) and / or the rotation speed of the lifting assembly 130.

[0044] In some embodiments, the liquid level sensor may be used to measure the liquid level position information and / or the liquid level height information of the melt within the growth chamber 110.

[0045] In some embodiments, the image acquisition device may include an infrared imaging device, an X-ray imaging device, an ultrasonic imaging device, or the like, or any combination thereof.

[0046] In some embodiments, the crystal manufacturing apparatus 100 may further include a processing assembly (not shown). In some embodiments, the processing assembly receives crystal growth related information transmitted from the detection assembly 180, and based on the crystal growth related information, controls other assemblies of the crystal manufacturing apparatus 100 (for example, the heating assembly 120, the pulling-up assembly 130, the guide assembly 140, the power assembly) to ensure normal growth of the crystal. For example, based on the liquid level position information and / or the liquid level height information, the processing assembly controls the pulling speed and / or the rotation speed of the pulling-up assembly 130 to keep the liquid level of the raw material melt constant, thereby controlling the immersion speed and / or the immersion amount of at least some members of the guide assembly 140 (for example, the cylinder 141 shown in FIG. 2) immersed in the raw material melt. Also for example, based on the pulling speed and / or the rotation speed of the pulling-up assembly 130, the processing assembly controls the power assembly so that the pulling speed and / or the rotation speed of the pulling-up assembly 130 meet the requirements of each stage of crystal growth. Also for example, based on the temperature information in the growth chamber 110, the processing assembly controls the heating power of the heating assembly 120 and / or the position of the heating assembly 120 to stably maintain the temperature field.

[0047] In some embodiments, the processing assembly may include a central processing unit (CPU), an application specific integrated circuit (ASIC), an application specific instruction set processor (ASIP), a graphics processing unit (GPU), a physics processing unit (PPU), a digital signal processor (DSP), a field programmable gate array (FPGA), a programmable logic device (PLD), a controller, a microcontroller unit, a reduced instruction set computer (RISC), a microprocessor, etc. or any combination thereof.

[0048] In some embodiments, the crystal manufacturing apparatus 100 may further include a display assembly (not shown). In some embodiments, the display assembly can display in real time crystal growth related information (e.g., temperature information, the pulling speed and / or rotation speed of the pulling assembly 130, the liquid surface position information, the appearance of the crystal), etc.

[0049] In some embodiments, the display assembly may include a liquid crystal display, a plasma display, a light emitting diode display, etc. or any combination thereof.

[0050] In some embodiments, the crystal manufacturing apparatus 100 may further include a memory assembly (not shown). The memory assembly can store data, instructions, and / or any other information. In some embodiments, the memory assembly can store data and / or information related to the crystal manufacturing process. For example, the memory assembly can store temperature information, liquid surface position information related to the crystal manufacturing process, and / or data and / or instructions for completing the exemplary crystal manufacturing method described in the embodiments of this specification.

[0051] In some embodiments, the memory assembly may include a USB memory, a portable hard disk, an optical disk, a memory card, etc. or any combination thereof.

[0052] It should be noted that the above description of the crystal manufacturing apparatus 100 is only for illustration and explanation, and does not limit the scope of application of this specification. Those skilled in the art can make various modifications and changes to the crystal manufacturing apparatus 100 under the guidance of this specification. However, these modifications and changes are still included within the scope of this specification.

[0053] FIG. 2 is a schematic configuration diagram of an exemplary pulling assembly and a guide assembly according to some embodiments of this specification.

[0054] In some embodiments, as shown in FIG. 2, the guide assembly 140 may include a cylinder 141 and a transmission mechanism 142. In some embodiments, the transmission mechanism 142 may be transmission-connected to the cylinder 141 to realize the up-and-down movement of the cylinder 141. In some embodiments, the transmission mechanism 142 may be transmission-connected to the lifting assembly 132 (e.g., the lifting rod 132). In some embodiments, the lifting assembly 130 and the transmission mechanism 142 may be in transmission motion to further drive the up-and-down movement of the cylinder 141. In some embodiments, in the crystal growth process, the lifting assembly 130, the cylinder 141, and the transmission mechanism 142 may be transmission-connected to each other and / or in transmission motion to control the growth parameters (e.g., temperature field, liquid surface position, and / or height) in the crystal growth process.

[0055] Specifically, for example, FIGS. 3 to 7 are schematic diagrams of an exemplary raw material heating and melting stage, seeding stage, lifting growth stage, and end of growth according to some embodiments of the present specification. As shown in FIG. 3, before the raw material is heated and melted (i.e., the raw material melts into a melt), the lifting assembly 130 and the guide assembly 140 are in transmission motion with each other, so that in the raw material heating and melting stage, the lifting rod 132 is at least partially located within the cylinder 141, and the seed crystal holder 131 is located within the cylinder 141 and above the raw material. As shown in FIG. 4, in the seeding stage, the lifting assembly 130 can move downward (as indicated by arrow a in FIG. 4), and the transmission mechanism 142 can drive the cylinder 141 to move upward (as indicated by arrow b in FIG. 4). As shown in FIGS. 5 and 6, in the lifting growth stage, the lifting assembly 130 can move upward (as indicated by arrow d in FIGS. 5 and 6), and the transmission mechanism 142 can drive the cylinder 141 to move downward (as indicated by arrow e in FIGS. 5 and 6). As shown in FIG. 7, in the end of growth stage, the lifting assembly 130 can move upward (as indicated by arrow f in FIG. 7), and the transmission mechanism 142 can drive the cylinder 141 to move downward (as indicated by arrow g in FIG. 7).

[0056] Generally, in the growth process of silicon carbide crystals, since the silicon component is volatile, the volatilized silicon vapor moves and adheres to the heat insulation assembly, destroying the heat insulation performance of the heat insulation assembly. Accordingly, in the embodiments of this specification, by introducing the cylinder 141 (in particular, a trapezoidal cylinder with a wide top and a narrow bottom), the volatilized silicon vapor can adhere to the side wall of the cylinder 141, thereby preventing the silicon vapor from moving to the heat insulation assembly 150 and ensuring the heat insulation performance and service life of the heat insulation assembly 150.

[0057] Also, silicon vapor tends to adhere to the surface of the seed crystal and cause spontaneous nucleation. By introducing the cylinder 141 in the embodiments of this specification, it can play a role in protecting and / or heat insulating the seed crystal and / or the growing crystal. Since crystal growth is carried out inside the cylinder 141, it can improve the temperature field distribution around the grown crystal, reduce the internal thermal stress of the crystal, and accordingly, avoid cracks caused by the cooling of the pulled-up crystal.

[0058] Furthermore, in the crystal growth process, as the crystal is pulled up and grown, the liquid level of the melt gradually decreases, so the temperature field near the liquid level changes greatly, and inclusions of impurities occur in the crystal. By introducing the cylinder 141 (and the transmission mechanism 142) in the embodiments of this specification, the cylinder 141 gradually immerses into the melt as the crystal grows, dynamically adjusts the position and / or height of the liquid level, and can basically maintain the liquid level stably. In addition, the silicon adhering to the side wall of the cylinder 141 can reduce the segregation phenomenon of the melt components caused by the volatilization of silicon by replenishing silicon to the melt. Furthermore, the cylinder 141 can play the role of a heat reflection screen, reduce the supersaturation of the liquid level of the melt, and avoid the formation of floating crystals due to spontaneous nucleation on the melt surface.

[0059] In some embodiments, the material of the cylinder 141 may include graphite that can provide the raw material carbon required for the manufacture of silicon carbide crystals.

[0060] In some embodiments, the diameter of the cylinder 141 may gradually increase along the direction from the bottom to the top of the cylinder 141 (as indicated by the arrow in FIG. 2). In some embodiments, the cylinder 141 may be a trapezoidal cylinder.

[0061] In some embodiments, the thickness of the cylinder 141 and the angle between its side wall and the horizontal plane affect the liquid level height, temperature field, etc. of the melt in the crystal growth process, and further affect the temperature field of crystal growth and crystal quality. For example, if the thickness of the cylinder 141 is too small, or the angle between the side wall of the cylinder 141 and the horizontal plane is too large, as the pulling-up assembly 130 pulls up in the crystal growth process, the part of the cylinder 141 immersed in the raw material melt of the cylinder 141 decreases, and the melt consumed by crystal growth cannot be replenished, and the temperature field and stable liquid level height required for crystal growth cannot be effectively guaranteed. Also, for example, if the thickness of the cylinder 141 is too large, or the angle between the side wall of the cylinder 141 and the horizontal plane is too small, the part of the cylinder 141 immersed in the raw material melt of the cylinder 141 increases in the crystal growth process, and similarly, a stable liquid level height cannot be effectively guaranteed.

[0062] In some embodiments, in the pulling-up growth stage, the angle between the side wall of the cylinder 141 and the horizontal plane also affects the distance between the seed crystal or the growing crystal and the side wall of the cylinder 141, affects the radial growth rate of the crystal, and further affects the diameter expansion growth of the crystal and the shoulder ring of the crystal.

[0063] Therefore, in some embodiments, the thickness of the cylinder 141 and the angle between the side wall of the cylinder 141 and the horizontal plane need to meet certain requirements.

[0064] In some embodiments, the thickness of the cylinder 141 may be in the range of 1 mm to 3 mm. In some embodiments, the thickness of the cylinder 141 may be in the range of 1.2 mm to 2.8 mm. In some embodiments, the thickness of the cylinder 141 may be in the range of 1.4 mm to 2.6 mm. In some embodiments, the thickness of the cylinder 141 may be in the range of 1.6 mm to 2.4 mm. In some embodiments, the thickness of the cylinder 141 may be in the range of 1.8 mm to 2.2 mm. In some embodiments, the thickness of the cylinder 141 may be in the range of 1.9 mm to 2 mm.

[0065] In some embodiments, the angle between the side wall of the cylinder 141 and the horizontal plane may be in the range of 100° to 140°. In some embodiments, the angle between the side wall of the cylinder 141 and the horizontal plane may be in the range of 105° to 135°. In some embodiments, the angle between the side wall of the cylinder 141 and the horizontal plane may be in the range of 110° to 130°. In some embodiments, the angle between the side wall of the cylinder 141 and the horizontal plane may be in the range of 115° to 125°. In some embodiments, the angle between the side wall of the cylinder 141 and the horizontal plane may be in the range of 118° to 120°.

[0066] In some embodiments, a through hole 1411 may be provided in the side wall of the cylinder 141. In the crystal growth process, the through hole 1411 can function as a transport passage between the melt inside the cylinder 141 and the external melt.

[0067] In some embodiments, the shape of the through hole 1411 may include regular shapes such as circular, elliptical, polygonal, star-shaped or irregular shapes. In some embodiments, the shapes of the through holes 1411 may be the same or different.

[0068] In some embodiments, the diameter and density of the through-holes 1411 affect the transport process and further affect the quality of the growing crystal. For example, if the diameter or density of the through-holes 1411 is too small, the transport efficiency of the melt inside the cylinder 141 and the external melt will be low. Also, for example, if the diameter of the through-holes 1411 is too large, floating crystals cannot be effectively prevented from entering the inside of the cylinder 141, affecting the crystal quality. Also, for example, if the density of the through-holes 1411 is too large, the volatilized silicon vapor moves from the through-holes 1411 located above the melt into the inside of the cylinder 141 and deposits on the surface of the crystal, affecting the crystal quality. Therefore, in some embodiments, the diameter and density of the through-holes 1411 need to meet certain requirements.

[0069] In some embodiments, the diameter of the through-holes 1411 may be in the range of 0.5 mm to 2 mm. In some embodiments, the diameter of the through-holes 1411 may be in the range of 0.7 mm to 1.8 mm. In some embodiments, the diameter of the through-holes 1411 may be in the range of 0.9 mm to 1.6 mm. In some embodiments, the diameter of the through-holes 1411 may be in the range of 1.1 mm to 1.4 mm. In some embodiments, the diameter of the through-holes 1411 may be in the range of 1.2 mm to 1.3 mm.

[0070] In some embodiments, the density of the through-holes 1411 can be expressed as the number of through-holes 1411 per unit area. In some embodiments, the density of the through-holes 1411 may be in the range of 3 holes / cm 2 ~10 holes / cm 2 In some embodiments, the density of the through-holes 1411 may be in the range of 4 holes / cm 2 ~9 holes / cm 2 In some embodiments, the density of the through-holes 1411 may be in the range of 5 holes / cm 2 ~8 holes / cm 2 In some embodiments, the density of the through-holes 1411 may be in the range of 6 holes / cm 2 ~7 holes / cm 2 In some embodiments, the density of the through-holes 1411 may be in the range of 6 holes / cm to 7 holes / cm.

[0071] In some embodiments, the distance between the through-hole 1411 and the bottom of the cylinder 141 affects the crystal growth process and / or crystal quality. For example, if the distance between the through-hole 1411 and the bottom of the cylinder 141 is too short, in the raw material heating and melting stage (as shown in FIG. 3, for example), at least a part of the through-holes 1411 is located below the seed crystal or close to the seed crystal, and the volatilized silicon vapor enters the inside of the cylinder 1411 from these through-holes 1411 and deposits on the surface of the seed crystal, affecting the crystal quality. Also, for example, if the distance between the through-hole 1411 and the bottom of the cylinder 141 is too large, in the crystal growth process, the through-hole 1411 cannot be effectively immersed in the melt and further cannot effectively transport the melt, thus affecting the crystal quality. Therefore, in some embodiments, the distance between the through-hole 1411 and the bottom of the cylinder 141 needs to meet certain requirements. In the embodiments of this specification, the distance between the through-hole 1411 and the bottom of the cylinder 141 can be understood as the distance between the lowermost through-hole 1411' and the bottom of the cylinder 141 (denoted as h in FIG. 2).

[0072] In some embodiments, the distance between the through-hole 1411 and the bottom of the cylinder 141 may be in the range of 3 mm to 10 mm. In some embodiments, the distance between the through-hole 1411 and the bottom of the cylinder 141 may be in the range of 3.5 mm to 9.5 mm. In some embodiments, the distance between the through-hole 1411 and the bottom of the cylinder 141 may be in the range of 4 mm to 9 mm. In some embodiments, the distance between the through-hole 1411 and the bottom of the cylinder 141 may be in the range of 4.5 mm to 8.5 mm. In some embodiments, the distance between the through-hole 1411 and the bottom of the cylinder 141 may be in the range of 5 mm to 8 mm. In some embodiments, the distance between the through-hole 1411 and the bottom of the cylinder 141 may be in the range of 5.5 mm to 7.5 mm. In some embodiments, the distance between the through-hole 1411 and the bottom of the cylinder 141 may be in the range of 6 mm to 7 mm.

[0073] In some embodiments, graphite paper 1412 may be provided at the bottom of the cylinder 141. In the raw material heating and melting stage (for example, as shown in FIG. 3), the graphite paper 1412 can prevent the volatilized silicon vapor (for example, indicated by "C" in FIG. 3) from adhering to the surface of the seed crystal (for example, indicated by "A" in FIG. 3), and can further guarantee the crystal growth quality. In the seeding stage (for example, as shown in FIG. 4), while lowering the lifting assembly 130 (as indicated by arrow a in FIG. 4) and raising the guide assembly 140 (for example, the cylinder 141) (as indicated by arrow b in FIG. 4), the seed crystal gradually approaches the graphite paper 1412, gently touches the graphite paper 1412, and the graphite paper 1412 enters the melt. The graphite paper 1412 can dissolve in the melt and provide the raw material carbon required for the production of silicon carbide crystals without introducing additional contaminants.

[0074] In some embodiments, the shape of the graphite paper 1412 can conform to the shape of the bottom of the cylinder 141. For example, when the shape of the bottom of the cylinder 141 is circular, the graphite paper 1412 may be circular. In some embodiments, the diameter of the graphite paper 1412 may be slightly larger than the diameter of the bottom of the cylinder 141. Accordingly, in the raw material heating and melting stage, the graphite paper 1412 can be positioned at the bottom of the cylinder 141 without automatically falling, and in the seeding stage, the graphite paper 1412 can be gently touched and enter the melt.

[0075] In some embodiments, the diameter of the graphite paper 1412 may be about 0.5 mm to 1 mm larger than the diameter of the bottom of the cylinder 141. In some embodiments, the diameter of the graphite paper 1412 may be about 0.6 mm to 0.9 mm larger than the diameter of the bottom of the cylinder 141. In some embodiments, the diameter of the graphite paper 1412 may be about 0.7 mm to 0.8 mm larger than the diameter of the bottom of the cylinder 141.

[0076] In some embodiments, the thickness of the graphite paper 1412 affects the crystal growth process and further affects the crystal quality. For example, if the thickness of the graphite paper 1412 is too small, during the raw material heating and melting stage, the graphite paper 1412 will move upward or float due to the volatilized silicon vapor, so the volatilized silicon vapor passes through the gap between the graphite paper 1412 and the inner wall of the cylinder 141 and moves above the graphite paper 1412 to adhere to the surface of the seed crystal, affecting the crystal quality. In some embodiments, if the thickness of the graphite paper 1412 is too large, the graphite paper 1412 will take a longer time to dissolve in the melt, further affecting the stability of the liquid level of the melt and the crystal growth process. Therefore, in some embodiments, the thickness of the graphite paper 1412 needs to meet certain requirements.

[0077] In some embodiments, the thickness of the graphite paper 1412 may be in the range of 100 μm to 300 μm. In some embodiments, the thickness of the graphite paper 1412 may be in the range of 120 μm to 280 μm. In some embodiments, the thickness of the graphite paper 1412 may be in the range of 140 μm to 260 μm. In some embodiments, the thickness of the graphite paper 1412 may be in the range of 160 μm to 240 μm. In some embodiments, the thickness of the graphite paper 1412 may be in the range of 180 μm to 220 μm. In some embodiments, the thickness of the graphite paper 1412 may be in the range of 200 μm to 210 μm.

[0078] In some embodiments, in order to reduce the temperature gradient above the crystal and maintain a stable temperature field to improve crystal quality, a top cover may be provided at the top of the cylinder 141. In some embodiments, the top cover may include a through hole so that the lifting assembly 130 can perform a lifting movement through the through hole. In some embodiments, the shape of the top cover can conform to the shape of the top of the cylinder 141. For example, when the shape of the top of the cylinder 141 is circular, the top cover may be circular. In some embodiments, the material of the top cover may include, but is not limited to, graphite.

[0079] In some embodiments, as shown in FIG. 2, the transmission mechanism 142 may include a connection link 1421, a connection member 1422, a rotating shaft 1423, and a stopper 1424.

[0080] In some embodiments, some of the connection links 1421 may be located on the top sidewall of the cylinder 141. In some embodiments, some of the connection links 1421 may be located on the lifting assembly 130 (for example, the lifting rod 132).

[0081] In some embodiments, the number of the connection links 1421 may be three, four, five, etc. In some embodiments, the plurality of connection links 1421 located on the top sidewall of the cylinder 141 are evenly distributed to make the cylinder 141 as stable as possible during the up and down movement of the cylinder 141, and further guarantee the stability of the liquid level of the melt.

[0082] In some embodiments, the connection member 1422 may be used to connect the connection link 1421 located on the top sidewall of the cylinder 141 and the connection link 1421 located on the lifting assembly 130 to connect the cylinder 141 and the lifting assembly 130 (for example, the lifting rod 132).

[0083] In some embodiments, the rotation axis 1423 may be located at a bracket above the growth chamber 110 or at the furnace body 160. For example, the rotation axis 1423 may be fixed to a support frame 1425 provided on the furnace body 160. In some embodiments, the rotation axis 1423 may include, but is not limited to, a fixed pulley.

[0084] In some embodiments, the connecting member 1422 passes through the rotation axis 1423 and connects a connecting link 1421 located on the top sidewall of the cylinder 141 and a connecting link 1421 located on the lifting assembly 130, so that the lifting assembly 130 (for example, the lifting rod 132) and the cylinder 141 move in opposite directions. For example, during the seeding stage, when the lifting assembly 130 moves downward (as shown by the arrow a in FIG. 4), the cylinder 141 moves upward (as shown by the arrow b in FIG. 4) so that the seed crystal A gradually approaches the graphite paper 1412. Also for example, during the lifting growth stage, when the lifting assembly 130 (for example, the lifting rod 132) moves upward (as shown by the arrow d in FIGS. 5 and 6), the cylinder 141 moves downward (as shown by the arrow e in FIGS. 5 and 6) to immerse in the melt and replenish the melt consumed by crystal growth, and further maintain a stable liquid level height of the melt.

[0085] In some embodiments, the stopper 1424 may be located on the connecting member 1422. In some embodiments, the stopper 1422 may be located on a connecting member 1422 proximate to a connecting link 1421 connected to the lifting assembly 130. In some embodiments, being proximate may mean being on the connecting member 1422 within a predetermined distance from the connecting link 1421 connected to the lifting assembly 130. In some embodiments, the predetermined distance may include, but is not limited to, 10 cm, 8 cm, 6 cm, 4 cm, 2 cm, 1 cm, etc. In some embodiments, the stopper 1424 may cooperate with the rotation axis 1423 to prevent the movement of the connecting member 1422. For example, as shown in FIG. 7, after the crystal growth is completed, when the lifting assembly 130 continues to move upward (as indicated by the arrow f in FIG. 7), the stopper 1424 is clamped to the rotation axis 1423, and it is possible to avoid the cylinder 141 continuing to descend and dissolve into the melt.

[0086] In some embodiments, the crystal manufacturing apparatus 100 may further include a support assembly, a drive assembly, and a temperature measurement assembly (which may be collectively referred to as a "temperature measurement device"). For more details, reference can be made to other parts of this specification (for example, FIG. 8 and its description), so the description is omitted here.

[0087] FIG. 8 is a schematic configuration diagram of an exemplary temperature measurement device according to some embodiments of this specification. In some embodiments, the temperature measurement device 800 may be used to measure the temperature related to the growth chamber 110. In some embodiments, the temperature measurement device 800 may be used to determine the position of the high-temperature line. In some embodiments, the temperature measurement device 800 can move the growth chamber 110 so that the liquid level of the melt is higher than the position of the high-temperature line to improve the crystal quality. Hereinafter, taking the production of silicon carbide crystals as an example, the temperature measurement device 800 according to the embodiments of the specification will be described in detail with reference to the drawings. It should be noted that the following embodiments are only for interpreting this specification and do not limit this specification.

[0088] As shown in FIG. 8, the temperature measurement device 800 may include a support assembly 810, a drive assembly 820, and a temperature measurement assembly 830.

[0089] In some embodiments, the support assembly 810 may be provided below the growth chamber 110 to support the growth chamber 110. In some embodiments, the support assembly 810 may be fixedly connected to the growth chamber 110. For example, one end of the support assembly 810 may be connected to the outer bottom of the growth chamber 110 by a screw chuck. In some embodiments, the support assembly 810 may be at least partially located within the furnace body 160.

[0090] In some embodiments, the drive assembly 820 may be used to drive the vertical movement of the support assembly 810 and further drive the vertical movement of the growth chamber 110.

[0091] In some embodiments, the drive assembly 820 may include a fixing member 821, a lead screw 822, and a power member 823.

[0092] In some embodiments, the fixing member 821 may be used to fix the support assembly 810 and connect the support assembly 810 and the lead screw 822. For example, the fixing member 821 may be welded to the support assembly 810. In some embodiments, the fixing member 821 may be transmission-connected (e.g., screwed) to the lead screw 822. In some embodiments, an internal thread may be provided on the fixing member 821, and an external thread may be provided on the lead screw 822, and the two may be connected by screwing the internal thread and the external thread together.

[0093] In some embodiments, the power member 823 can provide power to the lead screw 822. For example, the power member 823 can drive the lead screw 822 to rotate, and the lead screw 822 can drive the fixing member 821 and the support assembly 810 to move up and down, and further drive the growth chamber to move up and down.

[0094] In some embodiments, the temperature measurement assembly 830 may be used to measure the temperature within the growth chamber 110 (e.g., the temperature of the melt surface). In some embodiments, in the embodiments of this specification, the temperature measurement assembly and the temperature sensing member of the crystal manufacturing apparatus 100 described in FIG. 1 may be the same or similar assemblies or members.

[0095] In some embodiments, the temperature measurement device 800 may further include a processing assembly. The processing assembly and the processing assembly of the crystal manufacturing apparatus 100 may be the same processing assembly or may be independent processing assemblies.

[0096] In some embodiments, the processing assembly can receive the temperature information within the growth chamber 110 transmitted from the temperature measurement assembly 830 and determine the position of the high-temperature line (the position where the temperature in the growth chamber 110 is the highest or the horizontal position) based on the temperature information. For example, if the temperature at a specific position above the melt surface measured by the temperature measurement assembly 830 is higher than the temperature at any other position (e.g., any position other than the specific position), the processing assembly can determine the specific position above the melt surface as the position of the high-temperature line. Also, for example, if the temperature at a specific position below the melt surface measured by the temperature measurement assembly 830 is higher than the temperature at any other position (e.g., any position other than the specific position), the processing assembly can determine the specific position below the melt surface as the position of the high-temperature line. Also, for example, if the temperature of the melt surface measured by the temperature measurement assembly is higher than the temperature at other positions within the growth chamber (e.g., any position above or below the melt surface), the processing assembly can determine that the melt surface is at the position of the high-temperature line.

[0097] In some embodiments, the processing assembly can also compare the temperature of the melt surface with the temperature at other positions (positions above or below the melt surface) when the growth chamber is at different positions.

[0098] In some embodiments, based on the position of the high-temperature line, the processing assembly controls the drive assembly 820 to drive the up and down movement of the support assembly 810, so that the growth chamber 110 moves such that the melt liquid surface is at the position of the high-temperature line, and further, a high-quality crystal (for example, without defects such as inclusions) can be grown. For example, when the high-temperature line is at a specific position above the melt liquid surface, the processing assembly controls the drive assembly 820 to drive the upward movement of the support assembly 810, so that the growth chamber 110 moves upward such that the melt liquid surface is at the specific position. Also for example, when the high-temperature line is at a specific position below the melt liquid surface, the processing assembly controls the drive assembly 820 to drive the downward movement of the support assembly 810, so that the growth chamber 110 moves downward such that the melt liquid surface is at the specific position.

[0099] FIG. 9 is a flowchart of an exemplary crystal manufacturing method according to some embodiments of the present specification. The flow 900 may be executed by one or more assemblies of a crystal manufacturing apparatus (for example, the crystal manufacturing apparatus 100). In some embodiments, the flow 900 may be automatically executed by a control system. For example, the flow 900 may be realized based on control instructions, and the control system controls each assembly based on the control instructions to complete each operation of the flow 900. In some embodiments, the flow 900 may be executed semi-automatically. For example, one or more operations of the flow 900 may be manually executed by an operator. In some embodiments, when completing the flow 900, one or more additional operations not described may be added, and / or one or more operations described in the present specification may be deleted. Also, the order of the operations shown in FIG. 9 is not limiting. As shown in FIG. 9, the flow 900 includes the following steps 910 to 940.

[0100] In step 910, a raw material is placed in a growth chamber (for example, the growth chamber 110).

[0101] In some embodiments, the raw material may refer to the raw material necessary for crystal growth. For example, when growing a silicon carbide crystal, the raw material may include silicon (e.g., silicon powder, silicon wafer, silicon block), and the growth chamber (e.g., graphite chamber) itself can function as a carbon source. Also, for example, when growing a silicon carbide crystal, the raw material may include silicon and carbon (e.g., carbon powder, carbon block, carbon particles), that is, by additionally providing a carbon source, the service life of the growth chamber can be improved. In some embodiments, a flux may be included in the raw material to improve the solubility of carbon in silicon. In some embodiments, the flux may include, but is not limited to, aluminum alloy, silicon chromium alloy, Li-Si alloy, Ti-Si alloy, Fe-Si alloy, Sc-Si alloy, Co-Si alloy. For the related description of the growth chamber, other parts of this specification (e.g., FIG. 1 and its related description) can be referred to, so the description is omitted here.

[0102] In step 920, the lifting assembly (e.g., lifting assembly 130) with the seed crystal adhered is lowered near the raw material.

[0103] In some embodiments, the power assembly drives the lifting assembly with the seed crystal adhered to move downward and lower it near the raw material. In some embodiments, "near" may refer to a position within a predetermined distance from the upper surface of the raw material. In some embodiments, the predetermined distance may include, but is not limited to, 10 cm, 8 cm, 6 cm, 4 cm, 2 cm, 1 cm, 0.5 cm, 0.3 cm, 0.1 cm, etc.

[0104] In some embodiments, the lifting assembly is transmission-connected to the guide assembly (e.g., guide assembly 140) and is at least partially located within the guide assembly (e.g., within cylinder 141).

[0105] For related descriptions of the lifting assembly, guide assembly, power assembly, etc., reference can be made to other parts of this specification (for example, FIGS. 1 and 2 and their descriptions), so the description is omitted here.

[0106] In step 930, the growth chamber is heated to form a raw material melt.

[0107] In some embodiments, the growth chamber may be heated by a heating assembly (for example, heating assembly 130) so that the raw material melts into a raw material melt. For example, when growing a silicon carbide crystal, after the raw material melts, a solution containing carbon and silicon is formed to become a liquid raw material for crystal growth.

[0108] In some embodiments, as shown in FIG. 3, in the process of melting the raw material to form a raw material melt (raw material heating and melting stage), the seed crystal may be located below the through hole 1411 in the side wall of the cylinder 141. Accordingly, even if silicon vapor (for example, indicated by "C" in FIG. 3) can enter the inside of the cylinder 141 from the through hole 1411, since the seed crystal is located below the through hole 1411, the silicon vapor does not deposit on the surface of the seed crystal (for example, the seeding surface), protects the seeding surface of the seed crystal, and can avoid the occurrence of spontaneous nucleation phenomenon on the seed crystal in the subsequent seeding stage.

[0109] In some embodiments, during the raw material heating and melting stage, the distance between the bottom of the cylinder 141 or the graphite paper at the bottom thereof and the melt liquid level may be within a first predetermined range. In some embodiments, the graphite paper at the bottom of the cylinder 141 and the seeding surface of the seed crystal may be in contact, but there is no interaction force between them. In some embodiments, the distance between the bottom of the cylinder 141 or the graphite paper at the bottom thereof and the melt liquid level affects the crystal quality. For example, when the distance between the bottom of the cylinder 141 or the graphite paper at the bottom thereof and the melt liquid level is too small, during the raw material heating and melting stage, the graphite paper 1412 will be eroded and cannot protect the seeding surface of the seed crystal, which affects the seed crystal quality and further affects the crystal quality. Also for example, when the distance between the bottom of the cylinder 141 or the graphite paper at the bottom thereof and the melt liquid level is too large, during the subsequent pulling-up growth stage, the cylinder 141 cannot contact the melt due to the upward movement of the pulling-up assembly, and the cylinder 141 cannot avoid the floating crystal from entering the crystal growth interface, thus affecting the crystal quality. Therefore, in some embodiments, it is necessary to make the distance between the bottom of the cylinder 141 or the graphite paper at the bottom thereof and the melt liquid level within the first predetermined range.

[0110] In some embodiments, the first predetermined range may be within the range of 5 mm to 10 mm. In some embodiments, the first predetermined range may be within the range of 6 mm to 9 mm. In some embodiments, the first predetermined range may be within the range of 7 mm to 8 mm.

[0111] In some embodiments, in order to grow high-quality crystals (for example, without defects such as inclusions), the liquid level of the melt can be made higher than the position of the high-temperature line by a temperature measuring device (for example, the temperature measuring device 800).

[0112] In some embodiments, the temperature measuring device (e.g., temperature measuring device 800) adjusts the position of the growth chamber and compares the temperatures of the melt levels in the growth chamber at different positions to position the growth chamber at the position where the temperature of the melt level is the highest (i.e., position the melt level at the position of the high temperature line). For example, the temperature measuring assembly can measure the temperature of the melt level (which may be represented as "T0") at the current position of the growth chamber (which may be represented as "S0"). Starting from the current position S0 of the growth chamber, the processing assembly controls the drive assembly to drive the upward movement of the support assembly, so that the growth chamber moves upward by a first predetermined distance to reach a first position, and the temperature measuring assembly can measure the temperature of the melt level (which may be represented as "T1") at the first position of the growth chamber. Starting from the current position S0 of the growth chamber, the processing assembly can also control the drive assembly to drive the downward movement of the support assembly, so that the growth chamber moves downward by a first predetermined distance to reach a second position, and the temperature measuring assembly can measure the temperature of the melt level (which may be represented as "T2") at the second position of the growth chamber. Compare T0, T1, and T2. If the temperature difference between T0 and T1 or the temperature difference between T0 and T2 is greater than a predetermined temperature difference range, select the position where the temperature of the growth chamber is the highest (the highest temperature may be represented as "Tmax1") as the initial position (the initial position adjusted for the second time may be represented as "S1") for the second adjustment of the growth chamber. In some embodiments, the predetermined temperature difference range may be 0.5 °C or less, 1 °C or less, 2 °C or less, etc.

[0113] Starting from the initial position S1 adjusted for the second time, the processing assembly controls the drive assembly to drive the upward or downward movement of the support assembly respectively, so that the growth chamber moves upward or downward by a second predetermined distance to reach the third position or the fourth position, and the temperature measurement assembly can measure the temperatures T3 and T4 of the melt liquid surface at the third position and the fourth position of the growth chamber respectively. Compare Tmax1, T3 and T4. If Tmax1 is greater than T3, Tmax1 is greater than T4, and both the temperature difference between Tmax1 and T3 and the temperature difference between Tmax1 and T4 are within a predetermined temperature difference range, the position of the melt liquid surface where Tmax1 is located is the position of the high-temperature line. If the temperature difference between Tmax1 and T3 or the temperature difference between Tmax1 and T4 is greater than the predetermined temperature difference range, the position where the temperature of the growth chamber is the highest (the highest temperature may be represented by "Tmax2") is selected as the initial position adjusted for the third time of the growth chamber (the initial position adjusted for the third time may be represented by "S2"). By repeating this way, the position of the melt liquid surface with the highest temperature can be determined as the position of the high-temperature line, and at this time, the melt liquid surface is at the position of the high-temperature line.

[0114] In some embodiments, the first predetermined distance may be greater than or equal to the second predetermined distance. In some embodiments, in order to improve the determination efficiency of the high-temperature line, the first predetermined distance may be greater than the second predetermined distance.

[0115] In some embodiments, a temperature measuring device (e.g., temperature measuring device 800) can determine the position of the high-temperature line and further move the growth chamber so that the liquid level of the melt is at the position of the high-temperature line. In some embodiments, a temperature measuring assembly can measure temperature information in the growth chamber and transmit the measured temperature information to a processing assembly. In some embodiments, the processing assembly determines the position of the high-temperature line based on the temperature information and drives the movement of the support assembly by a drive assembly, and further drives the movement of the growth chamber, so that the liquid level of the melt is at the position of the high-temperature line. For example, if the temperature at a specific position above the liquid level of the melt measured by the temperature measuring assembly is higher than the temperature at any other position (e.g., any position other than the specific position), the processing assembly controls the drive assembly to drive the upward movement of the support assembly and moves the growth chamber upward so that the liquid level of the melt is at the specific position. Also for example, if the temperature at a specific position below the liquid level of the melt measured by the temperature measuring assembly is higher than the temperature at any other position (e.g., any position other than the specific position), the processing assembly controls the drive assembly to drive the downward movement of the support assembly and moves the growth chamber downward so that the liquid level of the melt is at the specific position. Also for example, if the temperature of the liquid level of the melt measured by the temperature measuring assembly is higher than the temperature at other positions in the growth chamber (e.g., any position above or below the liquid level of the melt), it is determined that the liquid level of the melt is at the position of the high-temperature line.

[0116] For the related description of the temperature measuring device, reference can be made to other parts of this specification (e.g., FIG. 8 and its description), so the description is omitted here.

[0117] In step 940, crystals are grown based on the seed crystal and the raw material melt by the transmission movement of the lifting assembly and the guide assembly.

[0118] In some embodiments, as shown in FIG. 4, in the seeding stage, the power assembly drives the lifting assembly 130 to move downward (as indicated by arrow a in FIG. 4), and drives the guide assembly 140 (e.g., cylinder 141) to move upward (as indicated by arrow b in FIG. 4). The seed crystal can gradually approach the graphite paper provided at the bottom of the cylinder 141. The seed crystal continues to move and gently touches the graphite paper, enabling the graphite paper to enter the melt.

[0119] In some embodiments, as shown in FIGS. 5 and 6, in the lifting growth stage, the power assembly drives the lifting assembly 130 to rotate and move upward (as indicated by arrow d in FIGS. 5 and 6), and drives the guide assembly 140 (e.g., cylinder 141) to move downward (as indicated by arrow e in FIGS. 5 and 6). The melt can enter the bottom of the cylinder 141, condense and crystallize at the position of the seed crystal to grow crystals.

[0120] In some embodiments, as shown in FIG. 6, in the process of growing crystals based on the seed crystal and the raw material melt (lifting growth stage), at least a part of the through holes 1411 in the side wall of the cylinder 141 may be located in the melt. The through holes 1411 can function as a transport passage between the melt inside the cylinder 141 and the external melt.

[0121] As described above, with the upward growth, some of the melt is consumed and the liquid level of the melt gradually decreases. As a result, the temperature field near the liquid level changes greatly, and impurities are included in the crystal. Accordingly, in some embodiments, the detection assembly can monitor crystal growth-related information and transmit the crystal growth-related information to the processing assembly. The processing assembly can control the lifting speed and / or the rotation speed of the lifting assembly based on the crystal growth-related information to maintain the liquid level of the raw material melt constant, so as to control the immersion speed and / or the immersion amount of the cylinder immersed in the raw material melt. For example, the liquid level sensor can measure the liquid level position information and / or the liquid level height information of the melt in the growth chamber during the crystal growth process and transmit the liquid level position information and / or the liquid level height information to the processing assembly. When the liquid level height of the melt becomes lower than the initial liquid level height due to the consumption of some of the melt, the processing assembly calculates the consumption speed and / or the consumption amount of the melt based on the liquid level position information and / or the liquid level height information, and further calculates the lifting speed of the lifting assembly based on the thickness of the cylinder and the angle between its side wall and the horizontal plane, etc., makes the immersion speed of the cylinder immersed in the melt equal to the consumption speed of the melt, and / or makes the immersion amount of the cylinder immersed in the melt equal to the consumption amount of the melt, so as to maintain the liquid level of the raw material melt constant, maintain the temperature field stably, and ensure the normal growth of the crystal.

[0122] Note that the above description regarding Flow 900 is for illustration and explanation only and does not limit the scope of application of this specification. A person skilled in the art can make various modifications and changes to Flow 900 under the guidance of this specification. However, these modifications and changes are still included within the scope of this specification.

[0123] Example 1 Place the raw silicon and flux for SiC crystal growth in the growth chamber and assemble the crystal manufacturing apparatus. Lower the pulling assembly with the seed crystal adhered thereto near the raw material by means of the power assembly. Heat the growth chamber by means of the heating assembly so that the raw material melts into a melt. During the raw material heating and melting stage, the distance between the bottom of the cylinder or the graphite paper at the bottom thereof and the melt liquid surface is within the range of 5 mm to 10 mm. After the raw material melts, the distance between the seeding surface of the seed crystal and the melt liquid surface is within the range of 6 mm to 12 mm. Lower the pulling assembly by means of the power assembly, and when the seed crystal touches the graphite paper, the graphite paper enters the melt. After a predetermined time (for example, 0.5 h) has elapsed, the seed crystal comes into contact with the melt and is seeded.

[0124] After the seed crystal comes into contact with the melt and 10 min to 30 min have elapsed, rotate the pulling assembly upward by means of the power assembly to grow the crystal. In the process of the pulling assembly moving upward, the cylinder descends until a part of it is immersed in and dissolved in the melt. During the pulling and growing stage, the detection assembly monitors the crystal growth related information and transmits the crystal growth related information to the processing assembly. The processing assembly controls the pulling speed and / or the rotation speed of the pulling assembly based on the crystal growth related information so as to keep the liquid level of the raw material melt constant, thereby controlling the immersion speed and / or the immersion amount of the cylinder immersed in the raw material melt.

[0125] When the stopper located at the connecting member moves to the graphite rotating shaft, it is tightened, the descent of the cylinder is stopped, and at this time, the pulling and growing stage ends. Move the pulling assembly upward by means of the power assembly to separate the crystal from the melt and obtain an inclusion-free SiC crystal.

[0126] The beneficial effects according to the embodiments of this specification include, but are not limited to, the following: (1) Due to the transmission movement of the lifting assembly and the guide assembly, crystal growth is carried out inside the cylinder of the guide assembly, improving the temperature of the temperature field. The transmission movement stably holds the melt liquid level in the growth process, improving crystal quality. (2) Since the diameter of the cylinder gradually increases along the direction from the bottom to the top of the cylinder, in the crystal growth process, the volatilized silicon vapor moves upward and reaches the side wall of the cylinder. Accordingly, it prevents the volatilized silicon vapor from moving to the heat insulation assembly, guaranteeing the heat insulation performance and service life of the heat insulation assembly. Furthermore, in the lifting growth stage, as the lifting assembly is lifted, the cylinder descends until part of it is immersed in the melt. The silicon attached to the side wall of the cylinder can replenish silicon to the melt, reducing the segregation phenomenon of the melt components. And the cylinder serves as a heat reflection screen, reducing the supersaturation degree of the melt liquid level and avoiding the formation of floating crystals due to spontaneous nucleation on the melt surface. (3) In the lifting growth stage, as the lifting assembly is lifted, part of the cylinder is immersed in the melt. The through holes in the side wall of the cylinder are immersed in the melt, and the through holes can function as a transport passage between the melt inside the cylinder and the external melt. The through holes can also prevent floating crystals outside the cylinder from entering the inside of the cylinder, maintaining stable crystal growth. (4) Graphite paper is provided at the bottom of the cylinder. In the raw material heating and melting stage, the graphite paper can prevent the volatilized silicon vapor from adhering to the surface of the seed crystal, and can further guarantee the crystal growth quality. In the seeding stage, the seed crystal lightly touches the graphite paper, enabling the graphite paper to enter the melt and dissolve, providing the raw material carbon required for the production of silicon carbide crystals. (5) The processing assembly controls the lifting speed and / or rotation speed of the lifting assembly based on crystal growth-related information (such as liquid level position information), and controls the immersion speed and / or immersion amount of the cylinder immersed in the raw material melt, thereby maintaining the liquid level of the raw material melt constant, stably maintaining the temperature field, guaranteeing the normal growth of crystals, and improving crystal quality.Note that the beneficial effects of different embodiments are different. In different embodiments, any one or more combinations of the above may be used, or any other possible beneficial effects may also be used.

[0127] Having described the basic concepts above, it is clear to those skilled in the art that the above detailed disclosure is merely exemplary and does not limit this specification. Although not explicitly described in this specification, those skilled in the art can make various changes, improvements, and modifications to this specification. Since these changes, improvements, and modifications are proposed in this specification, they are still within the spirit and scope of the exemplary embodiments of this specification.

[0128] Also, specific terms are used in this specification to describe the embodiments. For example, "one embodiment", "an embodiment", and / or "some embodiments" mean specific features, structures, or characteristics related to at least one embodiment of this specification. Therefore, it should be emphasized and understood that two or more references to "an embodiment" or "one embodiment" or "one alternative embodiment" in various parts of this specification do not necessarily refer to the same embodiment. Also, specific features, structures, or characteristics in one or more embodiments of this specification may be appropriately combined.

[0129] Similarly, in the foregoing description of the embodiments of this specification, for the purpose of simplifying the expressions disclosed in this specification and assisting in the understanding of one or more embodiments of the invention, it should be understood that various features may be grouped together in one embodiment, drawing, or its description. However, such a disclosure method does not mean that the features required for the subject matter of this specification are more than the features described in the claims. In fact, the features of an embodiment may be less than all the features of the single embodiment disclosed above.

[0130] In some embodiments, numbers are used to describe the number of components and attributes, and it should be understood that the numbers for describing such embodiments are modified by the modifier "about", "substantially" or "generally" in some examples. Unless otherwise specified, "about", "substantially" or "generally" indicates that the above numbers are allowed a variation of ±20%. Therefore, in some embodiments, the numerical parameters used in the specification and claims are all approximate values that can vary according to the characteristics required for individual embodiments. In some embodiments, for numerical parameters, the specified number of significant digits should be considered and the normal rounding method should be applied. In some embodiments of this specification, the numerical ranges and parameters for determining the range are approximate values, but in specific embodiments, such numbers are set as accurately as possible.

[0131] All patents, patent applications, published patent gazettes, and other materials such as papers, books, specifications, publications, documents, etc. referred to in this specification are incorporated herein by reference in their entirety, except for application process documents that do not match or conflict with the content of this specification, and documents that may have a limiting effect on the broadest scope of the claims of this specification (currently or later related to this specification). In addition, if the explanations, definitions, and / or uses of terms in the attached materials of this specification do not match or conflict with the content described in this specification, the explanations, definitions, and / or uses of terms in this specification shall prevail.

[0132] Finally, it should be understood that the embodiments described in this specification are merely for explaining the principles of the embodiments of this specification. Other variations may also be within the scope of this specification. Therefore, without limitation, by way of example, alternative configurations of the embodiments of this specification may be considered to be in accordance with the teachings of this specification. Therefore, the embodiments of this specification are not limited to the embodiments clearly introduced and described in this specification.

Explanation of Reference Signs

[0133] 100 Crystal manufacturing apparatus 110 Growth chamber 120 Heating Assembly 130 Lifting Assembly 131 Seed Crystal Holder 132 Lifting Rod 140 Guide Assembly 141 Cylinder 1411 Through Hole 1411’ Lowest Through Hole 1412 Graphite Paper 142 Transmission Mechanism 1421 Connecting Link 1422 Connecting Member 1423 Rotating Shaft 1424 Stopper 1425 Support Frame 150 Heat Insulation Assembly 160 Furnace Body 170 Observation Assembly 180 Detection Assembly 800 Temperature Measuring Device 810 Support Assembly 820 Driving Assembly 821 Fixed Member 822 Female Screw 823 Power Member 830 Temperature Measuring Assembly

Claims

1. A growth chamber for containing raw materials, a heating assembly for heating the growth chamber, a lifting assembly for lifting and growing, a guide assembly transmission-connected to the lifting assembly, A crystal manufacturing apparatus comprising:

2. The guide assembly includes a cylinder, and the lifting assembly is at least partially located inside the cylinder. The crystal manufacturing apparatus according to claim 1.

3. The diameter of the cylinder gradually increases along the direction from the bottom to the top of the cylinder. The crystal manufacturing apparatus according to claim 2.

4. The thickness of the cylinder is in the range of 1 mm to 3 mm. The crystal manufacturing apparatus according to claim 2.

5. The angle between the side wall of the cylinder and the horizontal plane is in the range of 100° to 140°. The crystal manufacturing apparatus according to claim 2.

6. A through hole is provided on the side wall of the cylinder. The crystal manufacturing apparatus according to claim 2.

7. The diameter of the through hole is in the range of 0.5 mm to 2 mm. The crystal manufacturing apparatus according to claim 6.

8. The distance between the through hole and the bottom of the cylinder is in the range of 3 mm to 10 mm. The crystal manufacturing apparatus according to claim 6.

9. The density of the through holes is 3 holes / cm ２ to 10 holes / cm ２ The crystal manufacturing apparatus according to claim 6, wherein the density is within the range of

10. Graphite paper is provided at the bottom of the cylinder. The crystal manufacturing apparatus according to claim 2.

11. The thickness of the graphite paper is in the range of 100 μm to 300 μm. The crystal manufacturing apparatus according to claim 10.

12. The guide assembly further includes a transmission mechanism transmission-connected to the cylinder to realize the up and down movement of the cylinder. The crystal manufacturing apparatus according to claim 2.

13. The transmission mechanism includes: a connection link located on the top side wall of the cylinder and the lifting assembly, a connecting member connected to the connection link, a rotating shaft located on a bracket at the upper part of the growth chamber and connected to the connecting member, a stopper located on the connecting member and cooperating with the rotating shaft to prevent the movement of the connecting member, The crystal manufacturing apparatus according to claim 12.

14. A support assembly for supporting the growth chamber, a drive assembly for driving the up and down movement of the support assembly, a temperature measurement assembly for measuring the temperature inside the growth chamber, The crystal manufacturing apparatus according to claim 1 further comprising:

15. A support assembly for supporting the growth chamber, a drive assembly for driving the up and down movement of the support assembly, A temperature measurement assembly for measuring the temperature inside the growth chamber, A temperature measuring device comprising the same. **Claim 16** A step of placing a raw material in a growth chamber, A step of lowering a pulling assembly to which a seed crystal is adhered near the raw material, The step in which the pulling assembly is transmission-connected to a guide assembly and is at least partially located inside the guide assembly, A step of heating the growth chamber to form a raw material melt, A step of growing a crystal based on the seed crystal and the raw material melt by the transmission movement of the pulling assembly and the guide assembly, A crystal manufacturing method comprising the same. **Claim 17** The guide assembly includes a cylinder, the pulling assembly to which the seed crystal is adhered is at least partially located inside the cylinder, and through holes are provided in the side wall of the cylinder. The crystal manufacturing method according to claim 16. **Claim 18** In the process of melting the raw material to form the raw material melt, the seed crystal is located below the through hole. The crystal manufacturing method according to claim 17. **Claim 19** In the process of growing a crystal based on the seed crystal and the raw material melt, at least a part of the through holes are located in the raw material melt. The crystal manufacturing method according to claim 17. **Claim 20** The step of growing a crystal based on the seed crystal and the raw material melt by the transmission movement of the pulling assembly and the guide assembly includes: A step of controlling the immersion speed and / or immersion amount of the cylinder in the raw material melt by controlling the pulling speed of the pulling assembly so as to keep the liquid level of the raw material melt constant. The crystal manufacturing method according to claim 17.

Images