Device and Method Including Low-Temperature-Grown Diamond in an Electronic Device

Abstract

【Solution means】

Description

Technical Field

[0001] Aspects of various embodiments are directed to semiconductor materials and devices, and their manufacture and use, the semiconductor materials including diamond for transporting heat.

Background Art

[0002] In an exemplary context, aspects of the present disclosure are directed to semiconductor devices comprising a self-heating portion of a circuit such as a channel region of an active device (e.g., a field effect transistor), and implementing diamond in a portion of the semiconductor device so as to efficiently dissipate heat from the self-heating portion. For example, at high power, excessive heat often occurs in the channel of the semiconductor device, and this heat tends to increase carrier scattering, resulting in a decrease in mobility. Also, during operation of an optoelectronic device, the heat generated in the device may cause a shift in the wavelength of the light processed by the device.

[0003] Furthermore, in semiconductor devices designed to operate at high frequencies, heat dissipation from the semiconductor channel is more difficult due to scaling. Often, operating a semiconductor device at high frequencies results in one or more high-temperature peaks. As various types of applications, heat removal by growing diamond on high-frequency high-power GaN-type transistors such as those used in power amplifiers may be used. Consider a GaN power amplifier (PA) that can be used as a power amplifier based on a high-frequency high-power (HFHP) transistor. These types of PAs are suitable solutions for base stations for 5G cellular communication, as well as for RADAR applications in aircraft and ships. These applications can generate a profound level of heat that poses significant challenges to the architecture and design, along with terrestrial wave hub communication and terrestrial wave backhaul communication using high output (P out ) / element.

[0004] (Particularly for high-power high-frequency applications) During the manufacture of such semiconductors, when a high level of heat is generated, the performance and lifespan of the device deteriorate. Therefore, in many applications, it is important to grow diamond at a temperature level within the allowable range of the semiconductor material and circuit. When a high level of heat is generated during the use of such semiconductors, the semiconductor may be damaged. This is particularly true for low-cost semiconductors based on silicon materials (e.g., SiO2, SiN). When a silicon-based wafer is exposed to heat above approximately 500 - 600 °C, it can have an adverse effect on the dopant mobility and cause other problems such as reflow of metal contacts, changes in contact resistance, and degradation of the saturation current of FETs, etc., potentially damaging silicon-based active devices such as SiO2 and various SiN-type field-effect transistors (FETs). See S. Sedky, A. Witvrouw, H. Bender, K. Beart, "Experimental determination of the maximum post-process annealing temperature for standard CMOS wafers," IEEE Transactions on Electron Devices, vol. 48, no. 2, pp. 377 - 385, Feb. 2001, doi:10.1109 / 16.902741. Also, for the above and other aspects of the background art, refer to the references described in the US provisional application on which this patent application is based.

[0005] These and other matters pose challenges to the efficient operation of semiconductor devices used in various applications. SUMMARY OF THE INVENTION

[0006] The various embodiments / implementations presented in this disclosure are directed to the above-mentioned problems and / or other problems that become apparent from the following disclosure. For example, some of these disclosed aspects are directed to methods and apparatuses that use or utilize low-temperature diamond growth.

[0007] In an example of the method according to the present disclosure, diamond is grown at a low temperature (e.g., less than 600 °C). In one aspect, the method reduces the formation of new diamond crystallites on top of each other during diamond growth while suppressing the formation of sp 2 carbon and controlling the growth of diamond by gas chemistry that improves the diamond crystal grain size in both the lateral and vertical directions. As another aspect, the low-temperature diamond is grown on a wafer that includes one or more Si-based semiconductor devices that are sufficiently close adjacent to a hot spot in the channel region of the semiconductor device (e.g., isometric to the surface of the semiconductor device), and during operation of the semiconductor device, heat is withdrawn from multiple sides of the hot spot without degrading the performance of the semiconductor device during operation.

[0008] Also, according to the present disclosure, an example of another embodiment is directed to an apparatus that includes a semiconductor device and a low-temperature grown diamond that is isometric to at least one surface of the semiconductor device, the low-temperature grown diamond clearly comprising at least one of a phase purity of 90% or more and diamond crystallites that are more isotropic than columnar in the diamond layer after fabrication (and after the formation of diamond resulting from growth), and the active device of the semiconductor device is not damaged. Thus, such an apparatus includes one or more active semiconductor devices having a channel region associated with a hot spot that appears during operation of the one or more semiconductor devices and diamond that is sufficiently close adjacent to the channel region that withdraws heat from multiple sides of the hot spot during operation.

[0009] Regarding certain experimental embodiments, the present disclosure aims to solve the problem of increasing power density in semiconductor devices for electronics applications such as those used from high-density computing applications to data communication for 5G / 6G networks. In such electronics applications, Joule heat (e.g., due to increased power density) and the resulting high temperature of the channels of active devices cause performance degradation and early failures. By integrating diamond in close proximity to the channels of devices where hot spots are formed through direct chemical vapor deposition, heat can be efficiently dissipated rather than increasing thermal conductivity. Since diamond mainly grows at high temperatures (700 - 1000 °C), the integration technology with many semiconductors is limited.

[0010] In certain specific examples according to the present disclosure, certain embodiments are directed to devices and / or methods that include low-temperature diamond disposed around one or more semiconductor devices (e.g., around multiple or adjacent sides) so as to provide three-dimensional relaxation of heat when heat is generated from the one or more semiconductor devices during operation. In another specific example according to the present disclosure, certain embodiments are directed to semiconductor devices, where one or more of the devices have hot spots associated with the channels of the one or more semiconductor devices, and a portion of the low-temperature diamond is disposed in close proximity to the hot spots.

[0011] In another example, the semiconductor device has hot spots associated with the channels of the one or more semiconductor devices, and includes an adjacent layer and a diamond layer, where the low-temperature diamond layer is thermally coupled to the adjacent layer, and a portion of the diamond is disposed in close proximity to the hot spots such that during operation of the semiconductor device, heat from the hot spots diffuses into the diamond layer and then diffuses out of the diamond layer.

[0012] In yet another embodiment, diamond (e.g., as a layer) is used in the device to provide a thermal conductivity that depends on the average particle size associated with low-temperature diamond, and the thermal conductivity is in the range of 100 to 2000 W / mk. For example, by arranging diamond around the device in two or more dimensions, the thermal resistance of the channel is reduced, thereby gradually reducing the high-temperature peak in the channel and flattening the temperature profile associated with at least one of the one or more semiconductor devices.

[0013] In a method of manufacturing and processing a semiconductor device (e.g., associated with one or more of the semiconductor devices described above), a low-temperature diamond or a low-temperature diamond layer is added after the remainder of the semiconductor device has been manufactured elsewhere (e.g., is ready to be tested). For example, this may be achieved by chemical vapor deposition of polycrystalline diamond and / or a single (diamond addition) process.

[0014] In another embodiment, a semiconductor device (e.g., associated with one or more of the semiconductor devices described above) is characterized by operating at a high switching speed, which is at least partially due to the use of technologies (e.g., SiO, SiN, GaN, Ga2O3, InP) used in the semiconductor device, generating a hot spot in the semiconductor device, and this heat is transported through a path or part of a low-temperature diamond.

[0015] The above description is not intended to describe every aspect, embodiment, or all implementations of the present disclosure. Also, the following detailed description and drawings illustrate various embodiments.

[0016] Examples of various embodiments, including experimental embodiments, can be more fully understood in consideration of the following detailed description, in relation to the accompanying drawings attached to the present disclosure, unless there is a contrary description.

Brief Description of the Drawings

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[0027] The various embodiments described herein are compliant with variations and alternatives, which are shown by way of example in the drawings and described in detail. However, it is understood that there is no intention to limit the present disclosure to the specific embodiments described. Rather, all variations, equivalents, and alternatives within the scope of the present disclosure, including the aspects defined in the claims, are intended to be encompassed. In addition, the term "example" used throughout this application is for illustrative purposes only and is not intended to be limiting.

Mode for Carrying Out the Invention

[0028] Aspects of the present disclosure are applicable to various different types of devices, systems, and methods, including certain exemplary embodiments that are at least partially characterized by diamond grown at low temperature, where the low temperature is in the range from less than 600 °C to slightly below 400 °C, and the gas chemistry for growing diamond reduces the formation of new diamond crystallites on top of each other while suppressing the formation of sp 2 carbon and improving the diamond crystal grain size in both the lateral and vertical directions. Also, although the following description in certain examples refers to polycrystalline diamond related to low-temperature grown diamond, it is understood that the description is provided only in an exemplary context to assist in the description of such aspects. The present disclosure is not necessarily limited to these and other aspects. Understanding of the specific examples in the following description may be understood from the description of the specific context further shown hereinbelow.

[0029] In an exemplary method according to the present disclosure, diamond grows at a low temperature (e.g., less than 600 °C). In one aspect, the method reduces the formation of new diamond crystallites on top of each other during the growth of diamond while sp 2Controlling diamond growth includes suppressing carbon formation and improving diamond crystal grain size in both the lateral and vertical directions by gas chemistry. In another aspect, low-temperature diamond grows on a wafer that includes one or more Si-based semiconductor devices that are sufficiently proximate and adjacent to a hot spot in the channel region of a semiconductor device (e.g., isogonal to the surface of the semiconductor device), and during operation of the semiconductor device, heat is drawn from multiple sides of the hot spot without degrading the performance of the semiconductor device during operation.

[0030] Also, according to the present disclosure, an example of another embodiment is directed to an apparatus that includes a semiconductor device and low-temperature grown diamond that is isogonal to at least one surface of the semiconductor device, where the low-temperature grown diamond clearly includes a diamond crystal grain in a diamond layer having a phase purity of 90% or more, being more isotropic than columnar, and at least one of the active elements of the undamaged semiconductor device after manufacture (and after formation of the diamond resulting from growth). Thus, such an apparatus includes one or more active semiconductor devices having a channel region associated with a hot spot that appears during operation of one or more semiconductor devices, and diamond that is sufficiently proximate and adjacent to the channel region that draws heat from multiple sides of the hot spot during operation.

[0031] Accordingly, in the following description, various specific details are set forth in order to describe certain specific embodiments presented herein. However, it is understood that one or more other embodiments and / or variations of those embodiments may be practiced without all of the following specific details. In another example, well-known features are not described in detail so as not to impede the description of the embodiments herein. For ease of explanation, the same symbols and / or reference numbers may be used in different drawings for references to the same element or additional examples of the same element. Also, in some cases, aspects and features may be described in separate drawings, but it is understood that features of one drawing or embodiment can be combined with features of another drawing or embodiment, even if the combination is not explicitly shown or specified as a combination.

[0032] Further specific embodiments of the present disclosure are directed to implementations that grow diamond at low temperatures and use diamond as an aid to extract heat from semiconductors and related devices to reduce the temperature of the channels. Previous efforts by the same inventors as the present disclosure have demonstrated that polycrystalline (PC) diamond on GaN with grain sizes greater than 2 μm exhibits a thermal conductivity (TC) of >650 W / m / K, which is greater than the thermal conductivity of Si, SiC, GaN, and most other dielectric materials. Such high-quality diamond grains can be used as a heat dissipation layer when integrated in proximity to hot spots. Diamond adheres to four other carbon atoms located at the vertices of a tetrahedron that creates a continuous and uniform 3D network of C-C sigma bonds, having sp 3 hybrid carbon atoms, enabling it to provide better interplanar TC than 2D materials. This 3D periodicity and high device temperature result in a better heat conductor compared to other (2D) materials, semiconductors, and even metals when heat dissipation in all directions is desired. In certain implementations that include efforts to maximize the thermal management capabilities of 3D PC diamond, an isotropic polycrystalline grain layer with similar in-plane and interplanar TC is used. Isotropic PC diamond grains require less thickening of the diamond layer for higher TC (unlike conventional diamond grown at temperatures of at least 650 °C), and the diamond grown according to certain embodiments of the present disclosure reduces the thermal residual stress in the grown diamond layer.

[0033] In an example of a more specific particular embodiment, the low-temperature diamond is integrated in one or more of the different stages of CMOS processing (backend of line (BEoL)) that is only compatible at temperatures below 450 °C. According to the present disclosure, in such BEoL-related embodiments, the low-temperature grown diamond grows at a temperature corresponding and compatible with temperatures below 450 °C, and in use at temperatures reduced below 600 °C during diamond growth, aspects of the present disclosure are such that sp 2 less carbon is incorporated so that sp 3(Diamond) phase purity is increased and it is used to reduce the degradation of the thermal properties (e.g., TC) of the diamond layer. In such a specific embodiment, the gas chemistry is introduced into the diamond growth chamber and sp at low temperature 2 etching is improved and sp 3 oxygen species (e.g., O2) optimized to promote formation are used. The oxygen added during low-temperature growth plays the role of high-temperature H2 plasma during high-temperature diamond growth by increasing the dissociation rate of methane monomers and the diamond nucleation rate and accelerating the non-diamond etching rate. Contrary to conventional research on low-temperature growth diamond, certain implementations consistent with the present disclosure not only reduce the growth temperature to <600 °C (e.g., <400 °C), but also maintain the thermal properties, phase purity, and anisotropy ratio similar to those of diamond grown at >600 °C (typically diamond grown at 650 - 900 °C). In the experimental examples of the present disclosure, such nearly isotropic low-temperature growth diamond is developed on SiO2 and Si3N4 thin layers and can be integrated on all semiconductor-based devices with SiO2 or Si3N4 dielectric capping.

[0034] The above types of low-temperature growth methods and apparatuses may include combinations of various embodiments (see examples, embodiments, and / or aspects) of the present disclosure, some of which are described below. One example is a uniform diamond layer having at least one of a phase purity of 90% or more and diamond crystallites that are more isotropic than columnar in the uniform diamond layer, and the Si-based active elements of the semiconductor device are not damaged. After the formation of one or more semiconductor devices, it is low-temperature growth diamond grown and / or formed on the Si-based material (grown at a temperature lower than 600 °C).

[0035] In another specific embodiment, one or more of the above methods include one or more of the following aspects, including low-temperature grown diamond grown at different temperatures below 600°C, such as one or more temperatures below 500°C and below 400°C (e.g., 200°C or higher). In connection with other aspects that may be used alone and / or in conjunction with one or more of the above and / or below aspects, the diamond layer is uniform; the diamond crystallites are more isotropic than columnar; the chemistry contains a selected amount or proportion of O2 and / or CO2; low-temperature growth is achieved by adjusting the distance from the plasma to the surface without changing the plasma density; the diamond growth chemistry uses O2 or CO2 to etch sp 2 carbon and sp 3 improve the formation of carbon; diamond growth includes an initial nucleation stage, after which the diamond growth chemistry is introduced to remove sp 2 carbon; the diamond growth chemistry contains a selected proportion or amount of diamond growth precursors (e.g., H2: 85 - 100%, CH4: 0 - 10%, O2: 0 - 6%, CO2: 0 - 10%) that improve or optimize the nucleation stage; the diamond layer grows from diamond crystallites configured to provide a phase purity of about 90% or more.

[0036] In a further aspect of the present disclosure (also useful as based on one or more of the exemplary embodiments and / or aspects characterized above), the selected proportion or amount of diamond growth precursors is selected by using a process that includes testing or sweeping different proportions or amounts of diamond growth precursors until the optimal proportions or amounts of CH4, O2, and CO2 are found, and the diamond layer grows from diamond crystallites configured to provide an optimal crystal quality and phase purity similar to that of conventional high-temperature diamond.

[0037] Also, in connection with the exemplary apparatus according to the present disclosure, the diamond layer has an anisotropy ratio (diamond thickness / crystallite size) of 1.21 - 1.76 of thickness to crystallite size, an average thermal conductivity of 300 W / m / K or more, and 5 m 2It is characterized by having at least one of the low thermal boundary resistances of K / GW.

[0038] In a particular another exemplary device according to the present disclosure that may be based on the aspects described above, the semiconductor device is directed to the following exemplary aspects. In one embodiment or aspect, diamond is adjacent to the channel region and is vertically separated from the substrate by at least a portion of the channel region disposed between the first diamond layer and the substrate layer, and the second diamond layer adjacent to the channel region and extending in a direction orthogonal to the plane in which at least a portion of the substrate is arranged. During the operation of one or more semiconductor elements, the first diamond layer draws heat away from the hot spot through the first diamond layer in the first spatial dimension, and the second diamond layer draws heat away from the hot spot through the first diamond layer in a second spatial dimension orthogonal to the first spatial dimension.

[0039] In another such aspect and / or embodiment, the semiconductor-based aspect includes a third diamond layer that is adjacent to the channel region and extends in a direction orthogonal to the plane in which at least a portion of the substrate is arranged. During operation of the semiconductor device, the third diamond layer draws heat away from the hot spot through the first diamond layer in a third spatial dimension orthogonal to the first and second spatial dimensions; the diamond is physically and thermally coupled to the substrate layer, and one or more semiconductor devices are at least partially fabricated; the diamond has a thermal conductivity that depends on the average crystal grain size associated with the diamond; the diamond is characterized by at least one of low temperature grown diamonds that demonstrate the addition of oxygen to a gas mixture by adding one or more (e.g., O2 and / or CO2) precursors, and the optimization of the growth stage or process of the low temperature grown diamond and / or the nucleation stage results in high phase purity of the diamond that is more isotropic than columnar, a diamond having a thermal conductivity of 100 - 2000 W / mK, a diamond having a thermal conductivity that depends on the average crystal grain size associated with the diamond, and the thermal conductivity of the diamond is 100 - 2000 W / mK.

[0040] Also, the process including the optimized nucleation stage and / or low temperature grown diamond is evident from the diamond and the channel region configured to demonstrate the temperature profile of the channel. During operation of one or more semiconductor devices, the temperature profile is characterized by a gradual decrease in peak temperature and flattening of the temperature profile. Also, such an aspect is evident from at least one of the characteristics of heat dissipation from the hot spot through the diamond, an anisotropy ratio of 1.3 or less (e.g., 1.21 - 1.3); a low thermal boundary resistance of 5m 2 k / GW or less; a thermal conductivity of at least 300 W / mk; a minimum thermal boundary resistance ("TBR", e.g., 5 - 15m 2 K / GW); and / or an improved thermal conductivity ("TC", e.g., 300 ± 100 W / m / K).

[0041] Consistent with the foregoing, the device so manufactured or the method of manufacturing thereof may include aspects presented and claimed in U.S. Provisional Application No. 63 / 389,179 (STFD.444P1 S22-301), filed on June 14, 2022, together with Addenda I and II and related appendices (the priority of this application is claimed to this U.S. provisional application). To the extent permitted, such subject matter is incorporated by reference in its entirety, generally and in further aspects and examples (such as experimental and more detailed embodiments), to the extent that such are useful for supplementation and / or clarification. Accordingly, for other embodiments, experimental examples, and detailed information of the application that can be combined to a different degree from the teachings herein, reference may be made to the U.S. provisional application, which forms part of this patent document and includes appendices that are incorporated herein by reference in their entirety to the extent permitted.

[0042] In connection with the specific examples disclosed herein (including more detailed / experimental examples), the high-quality low-temperature grown diamond of the examples grows at any one or more temperatures of 600 °C or less (e.g., less than 400 °C, less than 475 °C, less than 440 °C, and / or less than 500 °C). The gas chemistry used for such growth may be selected and / or adjusted at different stages of nucleation. In these specific examples, a small FWHM (full width at half maximum) sp 3 Raman peak (~6.5 cm -1 , referring to the full width at half maximum), and high phase purity (e.g., 90% or more, 97.1% in some examples) are included or obtained, which is surprisingly similar to >650 °C grown diamond (>98% phase purity). In such more detailed / experimental examples, the diamond layer obtained has a thickness of 790 nm and an average crystal grain size of 650 nm at 400 °C, which corresponds to an anisotropy ratio of 1.21 and is close to the anisotropy ratio of 1.12, which was the best for ~700 °C diamond. This nearly isotropic diamond (i.e., an anisotropy ratio of less than 1.3) has a relatively high thermal conductivity of ~300 W / m / K (on SiO2 and Si3N4 thin films) and only 5 m 2To exhibit a small thermal boundary resistance of K / GW, the cooling efficiency of diamond for semiconductor devices including Si, InP, Ga2O3, and GaN technologies with SiO2 / Si3N4 capping / interface layers can be improved.

[0043] Certain embodiments of the present disclosure are directed to the low-temperature growth of diamond on dielectrics widely used in various semiconductor technologies such as Si, GaN, SiC, InP, and Ga2O3, and this diamond is further applied as a heat spreader / heat spreading means. By lowering the growth temperature of diamond, not only the growth window of diamond on GaN-based devices is expanded, but diamond can also be integrated as a passive layer or an interlayer dielectric on other semiconductor devices such as silicon-based devices. Using only hydrogen plasma in low-temperature growth, as is common in high-temperature growth of diamond, has often been found to be insufficient due to deterioration of the diamond film caused by a decrease in the etching rate of non-diamond carbon and an increase in the incorporation of sp 2 carbon. Here, through experimental efforts, a low-temperature diamond growth technique at 400 °C has been developed by optimizing a mixed gas (H2 / CH4 / O2) that can create diamond growth with the same quality, phase purity, and morphology as high-temperature grown diamond (e.g., diamond grown at 700 °C, etc., at temperatures above 600 °C). This low-temperature diamond growth achieved isotropic crystallites (even at 400 °C) with an anisotropy ratio as low as 1.21 (close to the anisotropy ratio of 1.12 of previously grown 700 °C diamond as in other publications by the same inventors as this patent document). The low anisotropy ratio provides a higher in-plane thermal conductivity in addition to a significantly large interfacial thermal conductivity that is particularly necessary for cooling devices efficiently in all directions. In such a more specific embodiment, an average thermal conductivity of ~300 W / m / K and a 5m 2 low thermal boundary resistance of K / GW (remarkable compared to heat conduction materials reported in their polycrystalline form) was measured.

[0044] Moreover, according to the present disclosure, by using such a method for manufacturing, various semiconductor structures and / or devices may be characterized by some or all of the above features of the diamond layer or crystallites of the diamond layer. As an example, in an element created from such a process, as is apparent from imaging of a semiconductor element (or product) created from such a process including a gas chemistry for growing low-temperature diamond, in relation to the nucleation stage of low-temperature grown diamond, a large number of sp 2 carbons (more sp 3 carbons) there is a processing step of etching.

[0045] Looking at the drawings, the drawings described above relate to examples of more specific and experimental embodiments each related to a particular surprising discovery and realization of the present disclosure. As described above, FIG. 1 is a planar SEM micrograph and Raman spectrum of diamond grown at different temperatures in an environment of only H2 / CH4 gas, showing that the structural quality and phase purity of diamond decrease with decreasing temperature. In relation to these more specific and / or experimental examples, growing diamond on SiO2 and using a CH4 / H2 gas system are included. There are limitations (e.g., related to sp 2 carbons) in using only CH4 and H2 gases typically used in standard high-temperature (e.g., 700 ° C) grown diamond, while for efforts involving such high-temperature grown diamond, the structural properties of diamond grown at 300 ° C to 700 ° C with CH4 / H2 gas were evaluated and compared. As shown in FIG. 1, by lowering the temperature, the shape, particle size, and crystallites of the crystallites changed greatly. The 700 ° C grown diamond has the largest crystal grain size, and the 300 ° C grown diamond has the smallest crystal grain size. In the CH4 / H2 gas system, an activation energy of 20 - 30 kcal / mol is required to extract a hydrogen atom from a C-H bond on the surface and replace it with another carbon atom. It is difficult to satisfy this activation energy at low temperatures. At low temperatures, H2 plasma etches sp 2 carbons to sp 2 more sp 3To promote the formation, it is inefficient, and thus, soot-like carbon with a significantly small crystal grain size grows. This soot-like carbon layer has weak adhesion and low residual stress, so it easily peels off from the substrate. Since the growth diamond at 400 °C has a temperature 100 °C higher compared to the diamond at 300 °C, it shows larger crystal grain sizes and more faceted diamond crystallites. However, sp 2 carbon is still incorporated. Therefore, the re-nucleation rate is high, and new diamond crystallites are formed on top of each other rather than growing the existing crystallites larger. The crystal quality and phase purity were compared using Raman spectroscopy (Figure 1). As a reference, the Raman spectrum of a single-crystal diamond anvil cell was evaluated in comparison with a polycrystalline sample. The Raman peak position and FWHM of the single-crystal diamond were measured to be 1331.5 cm -1 and 4.9 cm -1 respectively. As expected, the 700 °C grown diamond showed higher crystal quality (FWHM of the sp 3 peak ~5.7 cm -1 ) and higher phase purity (98%) compared to the low-temperature grown polycrystalline diamond. When the temperature was decreased, due to the incorporation of sp 2 carbon, the FWHM increased (7.94 cm -1 at 500 °C, 9.27 cm -1 at 400 °C, 21.36 cm -1 at 300 °C), and the phase purity decreased (94.9% at 500 °C, 84.2% at 400 °C, 75.4% at 300 °C). As a result, a different gas system is required to grow high-quality diamond at <500 °C.

[0046] In connection with Figure 2, certain exemplary embodiments include the use of a tuned gas system including the use of O2 / CH4 / H2 gas for the growth of diamond according to aspects of the present disclosure.

[0047] Since the diamond grown at low temperature using the CH4 / H2 gas system described above was of low quality, not only the etching of sp 2 (disordered) carbon was promoted, but also sp 3Research on different gas chemistries to reduce the growth activation energy of carbon has been carried out. In order to grow diamond showing the same structural properties as 700 °C grown diamond at 400 °C, as described herein, oxygen is added to the mixed gas and the nucleation is optimized by two steps. As shown in Figure 2A, when oxygen is added to the chamber, carbon is etched due to the high electronegativity of oxygen atoms. Since the electronegativity of carbon is not so high, oxygen preferentially attracts electrons from the surface of the carbon-carbon bond, and thus the carbon-carbon bond is broken. Although the carbon-carbon double bond is strong as a whole, the individual of the two bonds has a relatively low bond energy on average, and is particularly more reactive than the carbon-carbon single bond existing in the ring which is extremely stable in most cases. Therefore, sp 3 bond and sp 2 bond and sp 2 carbon is preferentially etched.

[0048] In sample #B1, 3.4% CH4 and a relatively high content of O2 (2%) were used for diamond growth. As shown in Figure 2B, the grown layer is heterogeneous due to many diamond islands that did not coalesce. The higher etching rate of carbon and atomic carbon (CH3 +) The extremely low growth rate due to the deficiency significantly decreased the nucleation rate. Appropriate diamond nucleation in the early stage of growth resulted in sparse diamond particles. Oxygen plasma promotes the dissociation of carbon atoms from CH4 to improve the growth rate, but at the same time etches carbon-carbon double bonds. Furthermore, exposing the SiO2 regions not covered by diamond particles at low temperature to O2 plasma increases the chance of surface roughening or etching, as observed in sample #B1. For sample #B2, as shown in Figure 2C, 1% O2 and 5% CH4 were used, and since the re-nucleation rate was higher than that of sample #B1, the substrate was uniformly covered with diamond, but the crystallites were significantly smaller. In the inserted cross-sectional SEM, a high re-nucleation rate was confirmed, but instead of the desired microcrystalline diamond (MCD) growth, growth of ultra-nanocrystalline diamond (UNCD) was confirmed. To efficiently perform nucleation and at the same time reduce the re-nucleation rate to form larger crystallites, the combination of growth parameters of samples #B1 and #B2 was used, and the results shown in Figures 2D and 2E were achieved for sample #B3. By using a relatively high O2 concentration after the high re-nucleation stage, etching and growth were made equivalent, and sp 2 carbon formation was reduced, and at the same time the possibility of substrate damage was minimized (5 - 3% CH4, 1 - 2% O2).

[0049] From these experimental efforts, it is judged that isotropic crystallites of diamond can be achieved when the lateral and vertical growth rates are equivalent. Isotropic crystallites provide a higher effective TC and eliminate the need for a thick diamond layer. For example, the anisotropy ratio of the crystallites is ~1.76 (705 / 400 nm) in sample #B3, which is close to the ideal of unity and is almost the same as that achieved at 700 °C growth. However, a thick nucleation layer with smaller crystallites (Figure 2E) can have an adverse effect on the quality and phase purity of the layer and, as a result, degrade the thermal properties. As extracted from the Raman spectra in Figure 3A, the FWHM of samples #B2 and #B3 was 11.5 and 9.3 cm -1 respectively. 2The incorporation reduced the phase purity to 83.6% and 92.5% respectively. Therefore, in order to increase the phase purity, sp 2 A three-step growth technique has been developed to reduce carbon and simultaneously grow a uniform and complete coalescence layer (5% CH4, 1.7% O2 → 3.4% CH4, 1.7% O2 → 2.6% CH4, 2% O2). According to the embodiments of the present disclosure, this specific technical example not only reduces the incorporation of sp 2 (data of sample #B4 in Figure 3A), but also, as shown in Figure 3C, the nucleation layer of small crystallites disappeared. The FWHM decreased to 8.8 cm -1 , indicating a higher quality diamond than samples #B2 and #B3. For sample #B4, the anisotropy ratio decreased to 1.21, which is significantly closer to 1.12 of the diamond grown at 700 °C (see the inset in Figure 3C).

[0050] Due to the mismatch in the coefficient of thermal expansion (CTE) between diamond and the substrate (GaN / SiC), there is residual stress in the diamond layer. The CTE of diamond (1.1×10 -6 K -1 ) is smaller than that of the substrate, and the stress after cooling from 400 °C deposition is compressive stress. In sample #B2, a red shift of 2.6 cm 3 was measured from the peak position of sp -1 , which is a sign of tensile stress contrary to the typical prediction from the CTE mismatch. The main factor for this observation is the high re-nucleation rate that relaxes the diamond layer due to the formation of UCND. As confirmed by SEM (Figure 2C), this layer has more grain boundaries and polyacetylene, which ultimately results in tensile stress by compensating for the compressive stress caused by the CTE mismatch. On the other hand, samples #B3 and #B4 have blue shifts of 1.3 and 2.1 cm -1 respectively. Since their thicknesses are in the same range, the compressive stress of sample #B4 is higher due to the lower re-nucleation rate and incorporation of sp 2 .

[0051] To reduce the FWHM, an experimental effort was made to optimize the nucleation stage, the first stage, by growing diamond at 400 °C and sweeping the CH4% to bring it closer to 700 °C diamond. As can be seen from the results of the Raman spectra in Figure 4, the minimum CH4% (3.4%) during nucleation in the first stage, which enables uniform layer growth, results in a lower 6.6 cm -1 FWHM and a narrower sp 3 peak was obtained. From the top view of the SEM, there is no change in the grain size, shape, and uniformity, but when the CH4% is low, the diamond peak becomes narrower and the crystallinity improves.

[0052] To compare the results of different samples studied in relation to an example of a specific experimental embodiment of the present disclosure, the results presented above (FWHM, phase purity, Raman shift corresponding to residual stress, and anisotropy ratio) are summarized in Table 1 respectively.

[0053]

Table 1

[0054] In relation to Table 1, the following is described. The phase purity was calculated using the method described in M. Malakoutian, M. A. Laurent, S. Chowdhury, Crystals, 2019, 9, 1. In relation to the Raman shift column, a higher recrystallization rate applies tensile stress to the diamond layer and compensates for part of the compressive stress due to the CTE mismatch, and these Raman shift values were measured on diamond grown on a GaN / SiC substrate. The anisotropy ratio in the rightmost column is the diamond thickness divided by its crystal grain size, and the blank represented by δ was too large to be calculated. The residual stress in the corresponding column was calculated using the method and the shift of the Raman peak position described in (among others) M. Malakoutian, M. A. Laurent, S. Chowdhury, Crystals, 2019, 9, 1.

[0055] Also, in connection with examples of more detailed experimental embodiments, heat and interface analysis will be described. To increase the heat transport coefficient of the diamond heat spreader, its TC must be as high as possible and the thermal boundary resistance (TBR) between the diamond and the substrate must be as low as possible. According to certain embodiments of the present disclosure characterized by one or more of the above examples, low temperature diamond (sample #B4 in FIG. 3C) has a crystal grain size of 659 nm corresponding to an average TC theoretically between 300 W / m / K and 400 W / m / K. In connection with these experimental efforts, the transient thermal reflectivity (TTR) method was used and an analytical model was fitted to the measured signal (see FIG. 5A) to measure the TC and TBR of the diamond layer. The TC of the 400 °C grown diamond has an average value of ~300 W / m / K in the range of 250 - 400 W / m / K, which is consistent with a similar crystal grain size grown at 700 °C. The measured TC of the 400 °C grown diamond was approximately 200% higher than the TC (~110 W / m / K at 20 °C) reported for a 300 nm thick NCD diamond film grown at 450 - 500 °C. This relatively high TC at this relatively thin thickness of only 798 nm is due to the substantially isotropic shape of the crystal grains, which reduces the phonon scattering rate of these crystal grains and as a result improves the thermal properties. Another advantage of this low temperature diamond is the high quality nucleation at the interface resulting in a low TBR of 5 m 2 K / GW. This TBR is extremely close to that reported in one of the previous publications (the author is co - inventor of the present disclosure) for high temperature diamond grown at 700 °C, which is 3.1 m 2 K / GW. FIG. 5B shows the EELS mapping of carbon atoms with the change of chemical bonds at the interface. An extremely sharp transition (point 4 → 3) from SiO2 to sp 3 carbon was observed, confirming the thin interface layer (with less continuity of the temperature profile) and high quality nucleation that support the low TBR achieved in connection with the efforts of the present disclosure.

[0056] Also, examples of such more detailed experimental embodiments include diamond grown on Si3N4. To expand the applications of low-temperature diamond, the above-optimized low-temperature (400 °C) diamond growth technology was utilized on Si3N4 to study the interface smoothness and diamond crystallites. As shown in FIG. 6A, the shape of the crystallites and diamond nucleation are very (e.g., substantially) similar to those of the SiO2 substrate, highlighting the broad scope of seeding / nucleation according to aspects of the present disclosure. Through these efforts, a smooth interface with average crystallites of 500 - 700 nm was achieved. The interface between diamond and Si3N4 was characterized using EDS as shown in FIG. 6B, and a thin transition from carbon to Si3N4 was confirmed that can improve the thermal properties by reducing the thickness of the thermal barrier.

[0057] The above experiments include various details described below, which are useful for understanding specific experimental embodiments and related realizations. First, before diamond growth, diamond particles are seeded on the sample using a mixed ultrasonic treatment polymer-assisted seeding technique. Next, a PC diamond thin film was grown using an SDS5000 series microwave plasma CVD apparatus manufactured by Ceki Diamond Systems. The reaction gas consists of CH4, which is a diamond precursor, H2, which is a reaction activator for C-C bonds by providing reaction sites without H, and O2, which minimizes the formation of sp 2 carbon during low-temperature growth. Multiple parameters were studied to optimize low-temperature growth, and these are summarized in Table 2 for each sample. A plasma output of 900 - 1300 W, a chamber pressure of 20 - 40 Torr, a temperature of 300 - 500 °C, a CH4 content of 0.5 - 5%, and an O2 content of 1 - 2% were used.

[0058] Accordingly, Table 2 below shows the growth parameters for different samples utilized in these experimental efforts.

[0059]

Table 2

[0060] After diamond growth, the crystal grain size and thickness of the diamond layer were determined by a scanning electron microscope (FEI Nova NanoSEM430). For the study of the interface and the identification of chemical bond types at the interface, a scanning transmission electron microscope (STEM), electron energy loss spectroscopy (EELS), and energy-dispersive spectroscopy (EDS) analysis (JEOL JEM2100F-AC) were used. To evaluate the quality of diamond crystals, Raman spectroscopy measurements were performed (HORIBA Scientific LAbRAM HR Evolution spectrometer). The full width at half maximum (FWHM) of the Raman peak, sp 3 peak and the relative area under the sp 2 peak, and the red / blue shift were used to characterize diamond quality, sp 3 phase purity, and residual thermal stress, respectively. These characteristics were extracted from the Raman spectrum using the methods described separately. The transient thermoreflectance (TTR) was utilized to measure the thermal properties of diamond including the TC and the TBR with the substrate. The measurements were performed on diamond samples coated with gold (as a transducer) using a CW532 nm probe laser together with a 355 nm passively Q-switched Nd:YAG pump laser at a pulse width of 1 ns, a repetition frequency of 10 kHz, and a 1 / e 2 spot size of ~90 μm. Due to the inclusion of multiple layers of different materials, the thermal reflectance data was fitted to the transient heat equation using an axisymmetric transmission model to extract both the TBR and the TC. The fixed parameters and the extracted parameters of the control samples without diamond are shown in Table 3 (the fixed thermal properties used for TTR fitting are shown. The thermal conductivities of the layers other than diamond were extracted from the control samples indicated by *, and the symbol α indicates that two different substrates were used under the SiO2 thin layer in relation to these experimental efforts and this study.)

[0061] [Table 3]

[0062] FIG. 7 is a set of diagrams comparing diamond grains having a conventional columnar structure with diamond grains having an isotropic structure comprising grown diamond grains according to an experimental semiconductor device of the present disclosure (right), where the diamond grains are sp 2 Carbon Etching Gas Chemistry (sp 3 The more isotropic diamond grains shown in the right diagram of FIG. 7 show diamond over the TFP (or at least a portion or part of the TFP, such as a first TFP portion oriented along a first plane (e.g., substantially parallel to the surface on which the FET contacts or on which the FET channel is formed) and also show diamond over another portion of the TFP (or at least a portion or part of the second TFP along one or all sides of the active area of the channel oriented in a direction along a plane perpendicular or intersecting the first plane). For the first and second portions, the polycrystalline diamond grains are more isotropic than columnar, minimizing or reducing grain boundaries between the polycrystalline diamond grains and / or maximizing in-plane thermal conductivity during operation of the circuit.

[0063] FIG. 8 is a generalized flow diagram of a particular experimental semiconductor device disclosed herein. FIG. 8 also shows relevant aspects of a generalized flow of device-first processing in fabrication corresponding to an example of a particular experimental embodiment according to the present disclosure. In this example embodiment, a FET is illustrated having gates and source / drain contacts above and to the left and right of the active (channel region) region of the device, respectively (and these portions of the FET include and / or indicate one or more doped layers configured to operate in a complementary manner, as is known). It is understood that an example of this embodiment according to a particular aspect of the present disclosure may be applicable to either a 2D thermal diffusion device that transports heat through a plane of low-temperature grown diamond or a 3D thermal diffusion device that transports heat through multiple planes of low-temperature grown diamond.

[0064] More specifically, the generalized flow diagram of FIG. 8 shows a three-step device-first processing of a 3D thermal diffusion device of steps 810, 820, and 830. In step 810, a fully fabricated device is shown including all aspects except the above-described PC-grown diamond. In step 820, the same fully fabricated device is shown having low-temperature grown (PC) diamond above and to the left and right of the device active region including the channel (hot spots of the channel are not shown).

[0065] Accordingly, steps 810 and 820 of FIG. 8 illustrate such an embodiment where low-temperature diamond is grown on an active device (e.g., a semiconductor wafer) after processing, and the growth of diamond includes growing diamond that conforms to or integrates as part of the active device without degrading the performance of the active device after the manufacture of the active device. The active device includes at least one of SiO2 and Si3N4 and is mainly a silicon-based device. However, such diamond may be used with or grown on another (active) device such as one based on GaN, Ga2O3, and / or InP. The diamond layer functions as a diamond heat spreader for transporting heat such that it is characterized by a heat transport coefficient corresponding to a maximum value of thermal conductivity and a minimum value of thermal boundary resistance between the diamond layer and an adjacent layer, and may be formed on any layer of a semiconductor device (e.g., a substrate layer).

[0066] In step 830 of FIG. 8, a fully manufactured device is shown that provides access to the gate of the device by etching diamond. Also, access to the source and drain regions may be provided by etching the diamond from above or by conductive paths 810A and 810B formed prior to step 820.

[0067] FIG. 9 is a set of diagrams representing an exemplary mode of gas chemistry used to implement various structures described in connection with certain of the above figures (e.g., see FIGS. 2A, 2C (cross-sectional views), and 3C above) according to the present disclosure (through an example of diamond growth at about 400° C.).

[0068] A number of different types of processes, apparatuses, and uses can benefit by incorporating aspects disclosed herein that include related examples of the references identified in the above U.S. provisional application. In connection with this disclosure and / or the above U.S. provisional application, these references are specifically identified by reference numbers shown in brackets [#] starting from reference number #1, but are not necessarily limited thereto. In this regard, specific examples include Si-based elements as is common in the above context where examples of embodiments of the disclosure are described with advantages related to Si-based circuits and / or Si-based elements having a channel region, where "Si-based" in this case is used to characterize current-control silicon-containing circuits and / or silicon-containing elements, and the silicon-containing elements include or refer to one or more non-limiting examples such as the following: transistors (e.g., FETs), silicon-on-insulator elements, silicon-controlled rectifiers, and silicon-controlled active optical elements, etc., being active elements having the ability to control the flow of charge and having a channel region that characterizes where the flow of charge occurs, and such circuit-related structures are used for functions such as signal amplification, signal conversion, etc.

[0069] As a specific example, it is recognized and understood that the drawings and descriptions characterized above are provided to assist in explaining specific aspects (and in some cases, advantages) that can be used in the manufacture of such structures and apparatuses. These structures and apparatuses, along with other apparatuses, include examples of the structures and apparatuses described in connection with each drawing, and such described embodiments each have one or more related aspects that can be adjusted by and / or combined with other such apparatuses, and the examples described herein can also be found in the drawings and appendices of the above U.S. provisional application.

[0070] The subject matter described in this specification often refers to different elements contained within or connected to different other elements. It is understood that such illustrated architectures are exemplary and that many other architectures having the same functionality may be implemented. In a conceptual sense, any arrangement of elements that achieves the same functionality is effectively "related" so that the desired functionality is achieved. Thus, any two elements of this specification combined to achieve a particular function can be seen as "related" to each other such that the desired functionality is achieved, regardless of the architecture or intermediate elements. Similarly, any two elements so related can also be seen as "operably connected" or "operably coupled" (or "cooperatively configured") to each other to achieve the desired function. In this regard, a particular embodiment includes, but is not limited to, physically insertable elements and / or physically interacting elements and / or wirelessly interactable elements and / or wirelessly interacting elements and / or logically interactable elements and / or logically interacting elements.

[0071] It is understood by those skilled in the art that the use of plural and / or singular terms in this specification can be appropriately converted from plural to singular and / or from singular to plural depending on the context and / or application. Various singular / plural substitutions are presented herein for clarity.

[0072] Generally, it is understood by those skilled in the art that the terms used in this specification, particularly in the appended claims (e.g., the body of the appended claims), are generally intended to be open terms (e.g., the term "comprising" should be interpreted as "comprising, but not limited to", the term "having" should be interpreted as "having at least", the term "including" should be interpreted as "including, but not limited to", etc.).

[0073] When specific numbers are intended in the claims being introduced, that intention is explicitly stated in the claims, and in the absence of such a statement, it will be further understood by those skilled in the art that no such intention exists. For example, for purposes of illustration, the appended claims below may include the use of introductory phrases such as "at least one" and "one or more" to introduce the claim recitations. However, the use of such phrases should not be construed as limiting any particular claim scope that includes the introduced claim recitation to an invention that includes only that one recitation, even if the claim scope is introduced by the indefinite article "a" or "an" and includes the introductory phrase "one or more" or "at least one" and the indefinite article "a" or "an" (e.g., "a" and / or "an" should typically be construed to mean "one or more" or "at least one"), and the same is true for the use of definite articles in the claim recitations being introduced. Additionally, even if specific numbers are explicitly stated in the claim recitations being introduced, those skilled in the art will recognize that such recitations should typically be construed to mean at least the number recited (e.g., if "two recitations" is recited as such without other modifiers, it typically means at least two recitations or two or more recitations).

[0074] Furthermore, when expressions similar to "at least one of A, B, and C" are used, generally, such expressions are intended in the meaning that would be understood by those skilled in the art (for example, "a system having at least one of A, B, and C" includes, but is not limited to, a system having only A, only B, only C, A and B, A and C, B and C, and / or A, B, and C, etc.). When expressions similar to "at least one of A, B, or C" are used, generally, such expressions are intended in the meaning that would be understood by those skilled in the art (for example, "a system having at least one of A, B, or C" includes, but is not limited to, a system having only A, only B, only C, A and B, A and C, B and C, and / or A, B, and C, etc.). Substantially any disjunctive words and / or phrases presenting two or more alternative terms are understood by those skilled in the art to contemplate the possibility of including either one, any one, or both of those terms in any of the specification, claims, or drawings. For example, the phrase "A or B" is understood to include the possibilities of "A" or "B" or "A and B".

[0075] Also, those skilled in the art can recognize the various terms used in this disclosure. By way of example, the specification may describe and / or illustrate useful aspects for implementing examples with various semiconductor materials / circuits illustrated or used as terms such as layers, blocks, modules, devices, systems, units, controllers, processes, materials, material layers, and / or circuit layers, and / or circuits, and / or other semiconductor or circuit-related diagrams, etc. (e.g., an element or “active element” in such a context refers to or includes a transistor having a channel with mobility characteristics for conducting current and / or an optical structure). Also, in relation to such descriptions, the term “source” may refer interchangeably to the source and / or drain in the case of a transistor structure. Such semiconductor elements (including a part of a semiconductor structure) and / or semiconductor materials and circuit elements and / or related circuits may be used together with other elements to illustrate how a particular embodiment is implemented in terms of form or structure, process, function, operation, activity, etc. Embodiments of the present disclosure describe and / or illustrate aspects with reference to various process steps, materials, layers, and / or other structural and functional aspects (including those of the US provisional application), and such aspects may be used together with other elements to illustrate how a particular embodiment is implemented in terms of form or structure, process, function, operation, activity, etc.

[0076] Also, it is understood that terms exemplifying arrangements such as up / down, left / right, top / bottom, above / below, etc. may be used in this specification to refer to the relative positions of the elements shown in the drawings. The terms are for convenience of notation only, and in actual use, the disclosed structure may be in an arrangement different from that shown in the drawings. Therefore, the terms should not be construed as limiting. Further, unless otherwise specified, the use of words such as “substantially,” “about,” “around,” “substantially” means ±10%.

[0077] Based on the above description and illustration, those skilled in the art can easily recognize that various modifications and variations are possible from the exemplary embodiments and applications illustrated and described herein. For example, unless specifically specified otherwise above, the methods illustrated in the drawings and / or the description may include steps that can be executed in various orders while maintaining one or more aspects of the embodiments herein, or may include fewer or more steps. Also, unless specifically specified otherwise above, two or more steps may be executed simultaneously or partially simultaneously.

Claims

1. Growing diamond at a temperature below 600 °C to form a diamond layer, During the growth of the diamond, while reducing the formation of new diamond crystallites on top of each other, the growth of the diamond is controlled by gas chemistry that suppresses the formation of sp ２ carbon and improves the diamond crystal grain size in both the lateral and vertical directions, and A method comprising.

2. The low temperature is less than 500 °C, The diamond layer is uniform, The diamond crystallites are more isotropic than columnar, The chemistry includes an amount or proportion of O ２ or CO ２ that is included The method of Claim 1.

3. The low temperature is in the range of not less than 200 °C and less than 600 °C, the method of Claim 1.

4. The diamond growth chemistry etches sp ２ or CO ２ carbon and improves the formation of sp ２ carbon using ３ the method of claim 1.

5. Growing the diamond includes an initial nucleation stage, After the initial nucleation stage, diamond growth chemistry is introduced to sp ２ remove carbon, The low temperature is in the range of not less than 400 °C and less than 600 °C, The method of Claim 1.

6. Growing the diamond includes a nucleation stage, Diamond growth chemistry further includes a selected ratio or amount of diamond growth precursors (H ２ : 85 to 100%, CH ４ : 0 to 10%, O ２ : 0 to 6%, CO ２ : 0 to 10%) to improve the nucleation stage, The diamond layer grows by diamond crystallites configured to provide a phase purity of about 90% or more, The method of Claim 1.

7. The proportion or amount of the diamond growth precursor is the optimal proportion or amount of CH ４ , O ２ , and CO ２ is selected by using a process that includes testing or sweeping with different proportions or amounts of the diamond growth precursor until the optimal proportions or amounts of CH, O, and CO are found, The diamond layer grows by diamond crystallites configured to provide an optimal crystal quality and phase purity similar to that of conventional high-temperature diamond, The method of Claim 6.

8. Growing the diamond includes growing the diamond that fits or integrates as part of the active device without degrading the performance of the active device after manufacturing the active device, The active element is SiO ２ , Si ３ N ４ and includes at least one of them, and is mainly a silicon-based element. The method of Claim 1.

9. The diamond layer has at least one of an anisotropy ratio (diamond thickness / crystal grain size) of 1.21 to 1.76 of thickness to crystal grain size, an average thermal conductivity of 300 W / m / K or more, and a low thermal boundary resistance of 5 m ２ K / GW, and is characterized by the method according to claim 1.

10. The diamond layer is formed on an adjacent layer that functions as a diamond heat spreader for transporting heat such that it is characterized by a heat transport coefficient corresponding to a maximum value of thermal conductivity and a minimum value of thermal boundary resistance between the diamond layer and the adjacent layer, the method of Claim 1.

11. One or more semiconductor devices, having a channel region related to a hot spot that appears during operation of the one or more semiconductor devices, During operation of the one or more semiconductor devices, diamond that draws heat from multiple sides of the hot spot and is sufficiently close adjacent to the channel region, Comprising, The diamond is low-temperature grown diamond grown on an Si-based material after formation of the one or more semiconductor devices having the uniform diamond layer characterized by at least one of a phase purity of 90% or more and diamond crystallites that are more isotropic than columnar in the uniform diamond layer, The Si-based active device of the semiconductor device is not damaged, An apparatus.

12. Further comprising a substrate layer that supports the one or more semiconductor devices, The diamond is, A first diamond layer adjacent to the channel region, the first diamond layer being vertically separated from the substrate by at least a part of the channel region disposed between the first diamond layer and the substrate layer, the first diamond layer; Composed of and arranged from a second diamond layer adjacent to the channel region and extending in a direction orthogonal to the plane in which at least a part of the substrate is arranged; During operation of the one or more semiconductor elements, the first diamond layer draws heat away from the hot spot through the first diamond layer in a first spatial dimension, and the second diamond layer draws heat away from the hot spot through the first diamond layer in a second spatial dimension orthogonal to the first spatial dimension; The device of claim 11.

13. Further comprising a third diamond layer adjacent to the channel region and extending in a direction orthogonal to the plane in which at least a part of the substrate is arranged; During operation of the one or more semiconductor elements, the third diamond layer draws heat away from the hot spot through the first diamond layer in a third spatial dimension orthogonal to the first spatial dimension and the second spatial dimension; The device of claim 12.

14. The low-temperature grown diamond is grown at a temperature below 600 °C; Further comprising a substrate layer supporting the one or more semiconductor elements; The diamond is physically and thermally bonded to the substrate layer; The one or more semiconductor elements are at least partially manufactured; The device of claim 11.

15. The diamond has a thermal conductivity that depends on the average crystal grain size associated with the diamond; The diamond is characterized by at least one of a low temperature grown diamond demonstrating the addition of oxygen to a gas mixture by adding a precursor of one or more O ２ or CO ２ and a low temperature grown diamond demonstrating optimization of the nucleation stage during the growth stage or process of the diamond. The device of claim 11.

16. The device of claim 11, wherein the diamond has a thermal conductivity of 100 to 2000 W / mK.

17. The diamond has a thermal conductivity that depends on the average crystal grain size associated with the diamond; The thermal conductivity of the diamond is 100 to 2000 W / mK; The device of claim 11.

18. The diamond and the channel region are configured to exhibit a temperature profile of the channel; The temperature profile is characterized by a gradual decrease in peak temperature and flattening of the temperature profile during operation of the one or more semiconductor elements; The device of claim 11.

19. The apparatus of claim 11, wherein at least a portion of the diamond adjacent to the channel region is grown at a temperature less than 600°C.

20. The one or more semiconductor elements exhibit at least two characteristics of an anisotropy ratio of less than 1.3, a low thermal boundary resistance of 5 m ２ k / GW or less, and a thermal conductivity of at least 300 W / mk, due to heat dissipation from the hot spot through the diamond. The apparatus according to claim 11, characterized in that.

21. The apparatus of claim 11, wherein the diamond is configured with respect to the hot spot to improve heat dissipation from the hot spot through the diamond by providing at least two of the characteristics of an anisotropy ratio in the range of 1.21 to 1.3, a minimum thermal boundary resistance, and an improved thermal conductivity.

22. The one or more semiconductor elements are SiO ２ and Si ３ N ４ The apparatus of claim 11, comprising at least one of.

23. The diamond is 1 to 15 m ２ The apparatus of claim 11 configured for the hot spot so as to improve heat dissipation from the hot spot through the diamond by providing a minimum thermal boundary resistance (TBR) in the range of K / GW.

24. The apparatus of claim 11, wherein the diamond is configured with respect to the hot spot to improve heat dissipation from the hot spot through the diamond by providing a thermal conductivity in the range of 100 to 1000 W / m / K.

25. The diamond is characterized by being a low-temperature grown diamond having a phase purity, wherein the low-temperature grown diamond refers to a diamond grown at a temperature less than 600°C, The apparatus of claim 11.

26. The one or more semiconductor devices include a transistor having at least one of GaN, Ga ２ O ３ , and InP, and are operable at a high switching speed at least partially due to at least one of the GaN, Ga ２ O ３ , and InP of the transistor, and generate heat at the hot spot. The apparatus of claim 11.

27. Growing a low-temperature diamond at a temperature less than 600°C in sufficient proximity adjacent to the channel region on a wafer including one or more Si-based semiconductor devices having a channel region, During operation of the semiconductor device, extracting heat from multiple sides of the hot spot without degrading the performance of the semiconductor device during operation, Method.

28. The configuration or position of the diamond improves the thermal resistance characteristics of the material adjacent to the channel region, The thermal resistance characteristics correspond to the high peak temperature of the temperature profile of the channel that gradually decreases and flattens during the operation, The method of claim 27.

29. Growing the low-temperature diamond includes growing a diamond that fits or integrates as part of the active device after manufacture of the active device without degrading the performance of the active device during the operation, the method of claim 27.

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