Method for manufacturing a thin film, thin film, and substrate processing apparatus

Abstract

The present invention relates to a thin film manufacturing method, a thin film, and a substrate processing apparatus, including: a first forming step of forming a first thin film layer on a substrate by injecting a first source gas made of a high dielectric constant (High-K) material; a second forming step of forming a second thin film layer on the substrate by injecting a second source gas made of a high dielectric constant material; and a crystallization step of crystallizing at least one of the first thin film layer and the second thin film layer using plasma.

Description

Technical Field

[0001] The present invention relates to a thin film manufacturing method, a thin film, and a substrate processing apparatus for manufacturing a thin film on a substrate through a processing step for the substrate such as a vapor deposition step.

Background Art

[0002] Generally, in order to manufacture semiconductor elements, display devices, solar cells, etc., a predetermined thin film layer, a thin film circuit pattern, or an optical pattern must be formed on a substrate. For this purpose, processing steps for the substrate are performed, such as a vapor deposition step of vapor-depositing a thin film of a specific substance on the substrate, a photo process of selectively exposing the thin film using a photosensitive substance, and an etching process of removing the thin film of the selectively exposed portion to form a pattern. Through such processing steps for the substrate, a thin film can be manufactured on the substrate.

[0003] Recently, semiconductor elements, display devices, solar cells, etc. have not only been miniaturized but also developed to have a thinner thickness. For this reason, the thickness of the thin film must also be reduced. However, in a thin film transistor (TFT), in the case of a thin film embodied as an insulating layer between a semiconductor layer and a gate layer, there is a problem that current leakage occurs due to tunneling phenomenon or the like as the thickness of the thin film decreases.

[0004] Therefore, there is a demand for the development of a thin film that can be embodied with a thin thickness and can reduce current leakage.

Summary of the Invention

Problems to be Solved by the Invention

[0005] The present invention has been devised to solve the above-described problems, and aims to provide a thin film manufacturing method and a thin film that can reduce current leakage while having a thin thickness.

Means for Solving the Problems

[0006] In order to solve the problems as described above, the present invention can include the following configuration.

[0007] The thin film manufacturing method according to the present invention can include a first forming step of forming a first thin film layer on a substrate by injecting a first source gas made of a high dielectric constant (High-K) material, a second forming step of forming a second thin film layer on the substrate by injecting a second source gas made of a high dielectric constant material, and a crystallization step of crystallizing at least one of the first thin film layer and the second thin film layer using plasma.

[0008] The thin film according to the present invention can include a first thin film layer formed on a substrate using a high dielectric constant material and crystallized by plasma, and a second thin film layer formed on the substrate using a high dielectric constant material.

[0009] The substrate processing apparatus according to the present invention includes a chamber, a substrate support unit that supports a substrate inside the chamber, an upper dome formed on an upper surface of the chamber, an antenna disposed above the upper dome to form inductively coupled plasma, and the upper dome can be formed of ceramic.

Advantages of the Invention

[0010] According to the present invention, the following effects can be obtained.

[0011] In the present invention, both the first thin film layer and the second thin film layer are made of a high dielectric constant material, and by embodying it so as to crystallize at least one of the first thin film layer and the second thin film layer, even when formed with a thinner thickness, current leakage can be further reduced. Therefore, the present invention can contribute to manufacturing a thin film transistor or the like in a finer and thinner thickness, further reducing current leakage, and further improving the performance of a thin film transistor or the like.

Brief Description of the Drawings

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Mode for Carrying Out the Invention

[0013] Hereinafter, examples of the thin film manufacturing method according to the present invention will be described in detail with reference to the accompanying drawings. In describing the examples of the present invention, when it is described that a certain structure is formed "above" or "below" another structure, such a description should be interpreted to include not only the case where these structures are in contact with each other, but also the case where a third structure is interposed between these structures.

[0014] Referring to FIGS. 1 to 4, the method for manufacturing a thin film according to the present invention performs a processing step on a substrate (S) and manufactures a thin film on the substrate (S). The substrate (S) can be a silicon substrate, a glass substrate, a metal substrate, or the like.

[0015] The method for manufacturing a thin film according to the present invention can be performed by a substrate processing apparatus 1. Before describing an example of the thin film manufacturing method according to the present invention, an example of the substrate processing apparatus 1 is specifically as follows.

[0016] Referring to FIGS. 1 and 2, the substrate processing apparatus 1 can include a chamber 2, a susceptor 3, and an injection unit 4.

[0017] The chamber 2 provides a processing space 100. In the processing space 100, a step of performing a processing step on the substrate (S) and manufacturing a thin film on the substrate (S) can be performed. The processing space 100 can be disposed inside the chamber 2. An exhaust port (not shown) for exhausting gas from the processing space 100 can be connected to the chamber 2. Inside the chamber 2, the susceptor 3 and the injection unit 4 can be disposed.

[0018] The susceptor 3 supports the substrate (S). The susceptor 3 can support one substrate (S) or a plurality of substrates (S). When a plurality of substrates (S) are supported by the susceptor 3, a processing step can be performed on the plurality of substrates (S) at once to manufacture a thin film on each of the substrates (S). The susceptor 3 can be coupled to the chamber 2. The susceptor 3 can be disposed inside the chamber 2.

[0019] The injection unit 4 injects gas toward the susceptor 3. The injection unit 4 can be connected to the gas storage unit 40. In this case, the injection unit 4 can inject the gas supplied from the gas storage unit 40 toward the susceptor 3. The injection unit 4 can be disposed inside the chamber 2. The injection unit 4 can be disposed so as to face the susceptor 3. The injection unit 4 can be disposed above the susceptor 3. The processing space 100 can be disposed between the injection unit 4 and the susceptor 3. The injection unit 4 can be coupled to a lid (not shown). The lid can be coupled to the chamber 2 so as to cover the upper portion of the chamber 2.

[0020] The injection unit 4 can include a first gas flow path 4a and a second gas flow path 4b.

[0021] The first gas flow path 4a is for injecting a first gas. One side of the first gas flow path 4a can be connected to the gas storage unit 40 via a pipe, a hose, or the like. The other side of the first gas flow path 4a can communicate with the processing space 100. Thereby, the first gas supplied from the gas storage unit 40 can flow along the first gas flow path 4a and then be injected into the processing space 100 through the first gas flow path 4a. The first gas flow path 4a can function as a flow path for the first gas to flow and as an injection port for injecting the first gas into the processing space 100.

[0022] The second gas flow path 4b is for injecting a second gas. The second gas and the first gas can be different gases from each other. For example, when the first gas is a source gas, the second gas can be a reactant gas. One side of the second gas flow path 4b can be connected to the gas storage unit 40 via a pipe, a hose, or the like. The other side of the second gas flow path 4b can communicate with the processing space 100. Thereby, the second gas supplied from the gas storage unit 40 can flow along the second gas flow path 4b and then be injected into the processing space 100 through the second gas flow path 4b. The second gas flow path 4b functions as a flow path for the second gas to flow and can function as an injection port for injecting the second gas into the processing space 100.

[0023] The second gas flow path 4b and the first gas flow path 4a can be arranged to be spatially separated from each other. Thereby, the second gas supplied from the gas storage unit 40 to the second gas flow path 4b can be injected into the processing space 100 without passing through the first gas flow path 4a. The first gas supplied from the gas storage unit 40 to the first gas flow path 4a can be injected into the processing space 100 without passing through the second gas flow path 4b. The second gas flow path 4b and the first gas flow path 4a can inject gases toward different parts of each other in the processing space 100.

[0024] For example, the injection unit 4 can include a first plate 41 and a second plate 42.

[0025] The first plate 41 is arranged above the second plate 42. The first plate 41 and the second plate 42 can be arranged separately from each other. A plurality of the first gas holes 411 can be formed in the first plate 41. Each of the first gas holes 411 can function as a passage for the first gas to flow. The first gas holes 411 can belong to the first gas flow path 4a. A plurality of second gas holes 412 can be formed in the first plate 41. Each of the second gas holes 412 can function as a passage for the second gas to flow. The second gas holes 412 can belong to the second gas flow path 4b. A plurality of protruding members 413 can be coupled to the first plate 41. The protruding members 413 can protrude from the lower surface of the first plate 41 toward the second plate 42. Each of the first gas holes 411 can be formed to penetrate through the first plate 41 and the protruding members 413.

[0026] A plurality of openings 421 can be formed in the second plate 42. The openings 421 can be formed to penetrate through the second plate 42. The openings 421 can be arranged at positions corresponding to each of the protruding members 413. Thus, as shown in FIG. 2, the protruding members 413 can be formed to have a length such that they are arranged to be inserted into each of the openings 421. Although not shown in the figure, the protruding members 413 can also be formed to have a length such that they are arranged above each of the openings 421. The protruding members 413 can also be formed to have a length that protrudes below the second plate 42. The second gas holes 412 can be arranged to inject gas toward the upper surface of the second plate 42.

[0027] The injection unit 4 can generate plasma using the second plate 42 and the first plate 41. In this case, a plasma power source such as RF power can be applied to the first plate 41, and the second plate 42 can be grounded. It is also possible to ground the first plate 41 and apply a plasma power source to the second plate 42.

[0028] Through such a substrate processing apparatus 1 or the like, the thin film manufacturing method according to the present invention can be performed.

[0029] Referring to FIGS. 1 to 4, in the thin film manufacturing method according to the present invention, as shown in FIG. 3, in a thin film transistor (TFT, Thin Film Transistor) 200, a thin film embodied as an insulating layer 210 can be manufactured. The insulating layer 210 can be disposed between the gate electrode 220 and the semiconductor layer 230. The gate electrode 220 can be formed on the substrate (S). The semiconductor layer 230 can be formed on the insulating layer 210. Source and drain electrodes 240 and 250 can be formed on the semiconductor layer 230. As the thin film transistor 200 is further miniaturized and manufactured to have a thinner thickness, the insulating layer 210 also becomes thinner. However, as the thickness of the insulating layer 210 decreases, current leakage may occur due to tunneling phenomena or the like.

[0030] In order to reduce such current leakage, the thin film manufacturing method according to the present invention is embodied to manufacture a thin film made of a high dielectric constant (High-K) material. In addition to this, the thin film manufacturing method according to the present invention is embodied to crystallize a high dielectric constant material to manufacture a thin film. Thereby, the thin film manufacturing method according to the present invention can contribute to manufacturing the thin film transistor 200 to be finer and thinner by manufacturing a thin film capable of further reducing current leakage.

[0031] For this purpose, the thin film manufacturing method according to the present invention can include a first forming step (S10), a second forming step (S20), and a crystallization step (S30).

[0032] Referring to FIGS. 1 to 5, the first forming step (S10) is to form a first thin film layer 310 on the substrate (S) by injecting a first source gas made of a high dielectric constant material. In the first forming step (S10), the first source gas can be injected through a first gas flow path 4a of the injection unit 4. The first source gas may contain at least one of hafnium (Hf) and zirconium (Zr). Both hafnium and zirconium correspond to high dielectric constant materials. When the first source gas contains both hafnium and zirconium, a source gas containing hafnium and a source gas containing zirconium are mixed in a buffer tank arranged separately from the injection unit 4 to generate a mixed gas, and then the mixed gas can be supplied to the injection unit 4 and injected into the processing space 100. Therefore, the thin film manufacturing method according to the present invention can not only manufacture a thin film with improved step coverage, but also manufacture a thin film with improved composition uniformity.

[0033] In the first forming step (S10), after injecting the first source gas to adsorb the high dielectric constant material contained in the first source gas on the substrate (S), a first reaction gas can be injected to form the first thin film layer 310 on the substrate (S). In this case, the first forming step (S10) can form the first thin film layer 310 on the substrate (S) by an atomic layer deposition (ALD) method. The first reaction gas reacts with the first source gas and can be injected through a second gas flow path 4b of the injection unit 4. For example, the first reaction gas may be ozone (O3).

[0034] Referring to FIGS. 1 to 5, the second forming step (S20) is to form a second thin film layer 320 on the substrate (S) by injecting a second source gas made of a high dielectric constant material. In the second forming step (S20), the second source gas can be injected through a first gas flow path 4a of the injection unit 4. The second gas may contain at least one of hafnium and zirconium. After the second forming step (S20) injects the second source gas to adsorb the high dielectric constant material contained in the second source gas on the substrate (S), a second reaction gas can be injected to form the second thin film layer 320 on the substrate (S). In this case, the second thin film layer 320 can be formed on the substrate (S) by an atomic layer deposition (ALD) method. The second reaction gas reacts with the second source gas and can be injected through a second gas flow path 4b of the injection unit 4. For example, the second reaction gas can be ozone (O3). On the other hand, FIG. 5 shows the second thin film layer 320 directly formed on the first thin film layer 310, but it is not limited thereto, and other thin film layers can also be arranged between the second thin film layer 320 and the first thin film layer 310. Also, FIG. 5 shows that the first thin film layer 310 is formed on a lower film 330 formed on the substrate (S), but it is not limited thereto, and the first thin film layer 310 can also be directly formed on the substrate (S).

[0035] Referring to FIGS. 1 to 5, the crystallization step (S30) is to crystallize at least one of the first thin film layer 310 and the second thin film layer 320 using plasma. By crystallizing a high dielectric constant material using plasma to manufacture a thin film in the crystallization step (S30), the thin film manufacturing method according to the present invention can achieve the following operational effects.

[0036] First, in the case of a comparative example in which both the first thin film layer 310 and the second thin film layer 320 are made of a high-k dielectric material and both the first thin film layer 310 and the second thin film layer 320 are made of a non-crystallized thin film, according to the thin film manufacturing method of the present invention, both the first thin film layer 310 and the second thin film layer 320 are made of a high-k dielectric material, and a current leakage value larger than that of a thin film in which at least one of the first thin film layer 310 and the second thin film layer 320 is crystallized is shown at the same thickness. Thus, the thin film manufacturing method according to the present invention can be embodied to manufacture a thin film in which both the first thin film layer 310 and the second thin film layer 320 are made of a high-k dielectric material and at least one of the first thin film layer 310 and the second thin film layer 320 is crystallized, so that even when formed to a thinner thickness than the thin film according to the comparative example, a thin film with further reduced current leakage can be manufactured. Therefore, the thin film manufacturing method according to the present invention can contribute to manufacturing the thin film transistor 200 etc. to be finer and thinner in thickness and further reducing current leakage, and further improving the performance of the thin film transistor 200 etc.

[0037] Second, in the case of a comparative example in which a high-k dielectric material is crystallized through a thermal process, the high-k dielectric material does not crystallize unless it is formed to a thickness of a predetermined value or more. For example, through the thermal process, a high-k dielectric material containing at least one of hafnium and zirconium cannot be crystallized unless it is formed to a thickness of 100 Å or more. In contrast, the thin film manufacturing method according to the present invention can be embodied to crystallize the high-k dielectric material using plasma, so that when compared with a comparative example in which the high-k dielectric material is crystallized through a thermal process, the high-k dielectric material can be crystallized even when formed to a thinner thickness. For example, through plasma, a high-k dielectric material containing at least one of hafnium and zirconium can be crystallized even when formed to a thickness of 60 Å or less. Thus, the thin film manufacturing method according to the present invention can be embodied to crystallize the high-k dielectric material using plasma, so that a thin film with further reduced current leakage can be manufactured even when formed to a thinner thickness.

[0038] In the crystallization step (S30), plasma can be generated using a plasma gas containing at least one of helium (He), argon (Ar), ammonia (NH3), oxygen (O2), and hydrogen (H2). In this case, the first source gas contains at least one of hafnium and zirconium, and the first reaction gas can be ozone (O3). The first source gas may also contain at least one of hafnium, zirconium, and aluminum (Al).

[0039] Referring to FIGS. 1 to 6, the method for manufacturing a thin film according to the present invention may include a removal step (S40).

[0040] The removal step (S40) removes an oxide film from the lower film 330 formed on the substrate (S). The removal step (S40) can be performed before the first formation step (S10). Thereby, the first formation step (S10) can be performed by forming the first thin film layer 310 on the lower film 330 from which the oxide film has been removed through the removal step (S40). Therefore, the method for manufacturing a thin film according to the present invention can form the first thin film layer 310 having a more improved film quality. The oxide film formed on the lower film 330 may be generated by being exposed to the atmosphere. For example, the oxide film may be formed on the lower film 330 during the process of transferring the substrate (S) between process chambers. Unnecessary contaminants can also be removed together during the process of removing the oxide film through the removal step (S40). The removal step (S40) can be performed using an OEC (Oxide Elemination Chamber).

[0041] Referring to FIGS. 1 to 7, in the method for manufacturing a thin film according to the present invention, the first formation step (S10) may include a first adsorption step (S11) and a first deposition step (S12).

[0042] The first adsorption step (S11) adsorbs a high dielectric constant material onto the substrate (S) by injecting the first source gas. The first adsorption step (S11) can be performed by injecting the first source gas onto the substrate (S) through the first gas flow path 4a of the injection unit 4. The first adsorption step (S11) can inject a first source gas containing hafnium or zirconium. The first adsorption step (S11) can also inject a first source gas containing both hafnium and zirconium. In this case, the first adsorption step (S11) can also mix a source gas containing hafnium and a source gas containing zirconium in a buffer tank to generate a mixed gas and then inject the mixed gas. The first adsorption step (S11) can also first inject a source gas containing either one of hafnium and zirconium and then inject a source gas containing the remaining one. The first source gas may also contain at least one of hafnium, zirconium, and aluminum (Al). For example, the first source gas may be any one of HfO2, ZrO2, AL2O3, and HfZrO.

[0043] The first deposition step (S12) deposits a thin film made of a high dielectric constant material onto the substrate (S) by injecting the first reaction gas. The first deposition step (S) can be performed by injecting the first reaction gas onto the substrate (S) through the second gas flow path 4b of the injection unit 4. Through the first adsorption step (S11) and the first deposition step (S12), the first thin film layer 310 can be formed on the substrate (S) by atomic layer deposition (ALD). The first deposition step (S12) can be performed by injecting ozone onto the substrate (S) with the first reaction gas.

[0044] The first forming step (S10) may include a first adsorption purge step (S13) and a first deposition purge step (S14).

[0045] The first adsorption purge step (S13) can be performed by injecting a purge gas onto the substrate (S) after the first adsorption step (S11). The first adsorption purge step (S13) can be performed by injecting a purge gas onto the substrate (S) through at least one of the first gas flow path 4a and the second gas flow path 4b of the injection unit 4. The first adsorption purge step (S13) can also be performed by injecting a purge gas onto the substrate (S) through a purge gas flow path (not shown) of the injection unit 4. The purge gas flow path, the first gas flow path 4a, and the second gas flow path 4b can be embodied so as to be spatially separated from each other. After the first adsorption purge step (S13) is performed, the first vapor deposition step (S12) can be performed.

[0046] The first vapor deposition purge step (S14) can be performed by injecting a purge gas onto the substrate (S) after the first vapor deposition step (S12). The first vapor deposition purge step (S14) can be performed by injecting a purge gas onto the substrate (S) through at least one of the first gas flow path 4a and the second gas flow path 4b of the injection unit 4. The first vapor deposition purge step (S14) can also be performed by injecting a purge gas onto the substrate (S) through a purge gas flow path (not shown). After the first vapor deposition purge step (S14) is performed, the crystallization step (S30) can be performed.

[0047] Here, the first formation step (S10) and the crystallization step (S30) can be performed in a processing space 100 in an ultra-high vacuum state. For example, the first formation step (S10) and the crystallization step (S30) can be performed in a state where the processing space 100 is in an ultra-high vacuum of several mtorr to several tens of mtorr. In an ultra-high vacuum state, unnecessary impurities in the first source gas can be exhausted more smoothly. Therefore, in the method for manufacturing a thin film according to the present invention, the first source substance contained in the first source gas can be arranged in a more uniform lattice structure. As a result, the method for manufacturing a thin film according to the present invention can be advantageously implemented to grow the first source substance arranged in a uniform lattice structure into a crystallization array having a high dielectric constant.

[0048] When the first formation step (S10) includes the first deposition step (S12) and the first adsorption step (S11), the crystallization step (S30) can include a first crystallization step (S31).

[0049] The first crystallization step (S31) crystallizes the first thin film layer 310. The first crystallization step (S31) can be performed after the first deposition step (S12) is performed. In this case, in the method for manufacturing a thin film according to the present invention, after the first thin film layer 310 is deposited on the substrate (S) through the first adsorption step (S11) and the first deposition step (S12), the high dielectric constant substance of the first thin film layer 310 can be crystallized using plasma through the first crystallization step (S31). After the first crystallization step (S31) is performed, it can be re-executed from the first adsorption step (S11) again. On the other hand, when the first crystallization step (S31) is performed after the first deposition step (S12) is performed, the method for manufacturing a thin film according to the present invention can perform a thermal process in parallel. The thermal process can be performed continuously or intermittently while the first adsorption step (S11), the first deposition step (S12), and the first crystallization step (S31) are being performed. When the first formation step (S10) includes the first deposition purge step (S14), the first crystallization step (S31) can be performed after the first deposition purge step (S14) is performed.

[0050] Referring to FIGS. 1 to 8, in the method for manufacturing a thin film according to the present invention, the first deposition step (S12) and the first crystallization step (S31) can be performed together. In this case, the first reaction gas injected onto the substrate (S) through the first deposition step (S12) is activated using the plasma generated by the first crystallization step (S31) and can reach the substrate (S). As a result, in the method for manufacturing a thin film according to the present invention, when the first deposition step (S12) and the crystallization step (S30) are performed together, the first thin film layer 310 made of a high dielectric constant material is deposited on the substrate (S), and the first thin film layer 310 can be crystallized using plasma. After the first deposition step (S12) and the first crystallization step (S31) are performed together, it can be performed again from the first adsorption step (S11). Although not shown in the figure, the first deposition step (S12) can also perform deposition and crystallization together by using oxygen (O2) plasma as the first reaction gas.

[0051] Referring to FIGS. 1 to 8, in the method for manufacturing a thin film according to the present invention, the first crystallization step (S31) can include a first parallel crystallization step (S311) and a first subsequent crystallization step (S312).

[0052] The first parallel crystallization step (S311) crystallizes a high dielectric constant material using plasma. The first parallel crystallization step (S311) can be performed together with the first deposition step (S12). In this case, the first reaction gas injected onto the substrate (S) through the first deposition step (S12) is activated using the plasma generated by the first parallel crystallization step (S311) and can reach the substrate (S). As a result, in the method for manufacturing a thin film according to the present invention, when the first deposition step (S12) and the first parallel crystallization step (S311) are performed simultaneously, the first thin film layer 310 is deposited on the substrate (S) and the first thin film layer 310 can be crystallized using plasma.

[0053] The first subsequent crystallization step (S312) crystallizes the first thin film layer 310 using plasma. After the first deposition step (S12) and the first parallel crystallization step (S311) are performed, the first subsequent crystallization step (S312) can be carried out. Thereby, in the thin film manufacturing method according to the present invention, after the first thin film layer 310 is primary crystallized through the first parallel crystallization step (S311), the first thin film layer 130 can be secondary crystallized through the first subsequent crystallization step (S312). Therefore, the thin film manufacturing method according to the present invention can increase the crystallization ratio of the first thin film layer 310, so that a thin film with further reduced current leakage can be manufactured even when formed with a thinner thickness. Thereby, the thin film manufacturing method according to the present invention can contribute to manufacturing the thin film transistor 200 and the like with finer and thinner thickness. After the first subsequent crystallization step (S312) is performed, it can be performed again from the first adsorption step (S11).

[0054] Referring to FIGS. 1 to 9, in the thin film manufacturing method according to the present invention, the second forming step (S20) may include a second adsorption step (S21) and a second deposition step (S,22).

[0055] The second adsorption step (S21) adsorbs a high dielectric constant material onto the substrate (S) by injecting the second source gas. The second adsorption step (S21) can be achieved by injecting the second source gas onto the substrate (S) through the first gas flow path 4a of the injection unit 4. The second adsorption step (S21) can inject a second source gas containing hafnium or zirconium. The second adsorption step (S21) can also inject a second source gas containing both hafnium and zirconium. In this case, the second adsorption step (S21) can also mix a source gas containing hafnium and a source gas containing zirconium in a buffer tank to generate a mixed gas and then inject the mixed gas. The second adsorption step (S21) can also first inject a source gas containing either one of hafnium and zirconium and then inject a source gas containing the remaining one. The second source gas may also contain at least one of hafnium, zirconium, and aluminum (Al). For example, the second source gas can be any one of HfO2, ZrO2, AL2O3, and HfZrO.

[0056] The second deposition step (S22) deposits a thin film made of a high dielectric constant material onto the substrate (S) by injecting the second reaction gas. The second deposition step (S22) can be achieved by injecting the second reaction gas onto the substrate (S) through the second gas flow path 4b of the injection unit 4. Through the second adsorption step (S21) and the second deposition step (S22), the second thin film layer 320 can be formed on the substrate (S) by the atomic layer deposition (ALD) method. The second deposition step (S22) can be achieved by injecting ozone onto the substrate (S) with the second reaction gas.

[0057] The second forming step (S20) can include a second adsorption purge step (S23) and a second deposition purge step (S24).

[0058] The second adsorption purge step (S23) can be performed by injecting a purge gas onto the substrate (S) after the second adsorption step (S21). The second adsorption purge step (S23) can be performed by injecting a purge gas onto the substrate (S) through at least one of the first gas flow path 4a and the second gas flow path 4b of the injection unit 4. The second adsorption purge step (S23) can also be performed by injecting a purge gas onto the substrate (S) through a purge gas flow path (not shown) of the injection unit 4. The purge gas flow path, the first gas flow path 4a, and the second gas flow path 4b can be embodied so as to be spatially separated from each other. After the second adsorption purge step (S23) is performed, the second vapor deposition step (S22) can be performed.

[0059] The second vapor deposition purge step (S24) can be performed by injecting a purge gas onto the substrate (S) after the second vapor deposition step (S22). The second vapor deposition purge step (S24) can be performed by injecting a purge gas onto the substrate (S) through at least one of the first gas flow path 4a and the second gas flow path 4b of the injection unit 4. The second vapor deposition purge step (S24) can also be performed by injecting a purge gas onto the substrate (S) through a purge gas flow path (not shown). After the second vapor deposition purge step S24 is performed, the crystallization step (S30) can be performed.

[0060] Here, the second forming step (S20) and the crystallization step (S30) can be performed in a processing space 100 in an ultra-high vacuum state. For example, the second forming step (S20) and the crystallization step (S30) can be performed in a state where the processing space 100 is in an ultra-high vacuum of several mtorr to several tens of mtorr. In an ultra-high vacuum state, unnecessary impurities in the second source gas can be exhausted more smoothly. Therefore, in the method for manufacturing a thin film according to the present invention, the second source substance contained in the second source gas can be arranged in a more uniform lattice structure. As a result, the method for manufacturing a thin film according to the present invention can be advantageously implemented to grow the second source substance arranged in a uniform lattice structure into a crystallization array having a high dielectric constant.

[0061] When the second forming step (S20) includes the second deposition step (S22) and the second adsorption step (S21), the crystallization step (S30) can include a second crystallization step (S32).

[0062] The second crystallization step (S32) crystallizes the second thin film layer 320. The second crystallization step (S32) can be performed after the second deposition step (S22) is performed. In this case, in the method for manufacturing a thin film according to the present invention, after the second thin film layer 320 is deposited on the substrate (S) through the second adsorption step (S21) and the second deposition step (S22), the high dielectric constant substance of the second thin film layer 320 can be crystallized using plasma through the second crystallization step (S32). After the second crystallization step (S32) is performed, the second adsorption step (S21) can be performed again. On the other hand, when the second crystallization step (S32) is performed after the second deposition step (S22) is performed, the method for manufacturing a thin film according to the present invention can perform a thermal process in parallel. The thermal process can be performed continuously or intermittently while the second adsorption step (S21), the second deposition step (S22), and the second crystallization step (S32) are performed. When the second forming step (S20) includes the second deposition purge step (S24), the second crystallization step (S32) can be performed after the second deposition purge step (S24) is performed.

[0063] Referring to FIGS. 1 to 10, in the method for manufacturing a thin film according to the present invention, the second deposition step (S22) and the second crystallization step (S32) can also be performed together. In this case, the second reaction gas injected onto the substrate (S) through the second deposition step (S22) can be activated using the plasma generated by the second crystallization step (S32) and reach the substrate (S). Therefore, in the method for manufacturing a thin film according to the present invention, when the second deposition step (S22) and the crystallization step (S30) are performed together, the second thin film layer 320 made of a high dielectric constant material can be deposited on the substrate (S), and the second thin film layer 320 can be crystallized using plasma. After performing the second deposition step (S22) and the second crystallization step (S32) together, it can be performed again from the second adsorption step (S21). Although not shown in the figure, in the second deposition step (S22), by using oxygen (O2) plasma as the second reaction gas, deposition and crystallization can also be performed together.

[0064] Referring to FIGS. 1 to 10, in the method for manufacturing a thin film according to the present invention, the second crystallization step (S32) can include a second parallel crystallization step (S321) and a second subsequent crystallization step (S322).

[0065] The second parallel crystallization step (S321) crystallizes a high dielectric constant material using plasma. The second parallel crystallization step (S321) can be performed together with the second deposition step (S22). In this case, the second reaction gas injected onto the substrate (S) through the second deposition step (S22) is activated using the plasma generated by the second parallel crystallization step (S321) and can reach the substrate (S). Therefore, in the method for manufacturing a thin film according to the present invention, by performing the second deposition step (S22) and the second parallel crystallization step (S321) together, the second thin film layer 320 can be deposited on the substrate (S) and the second thin film layer 320 can be crystallized using plasma.

[0066] The second subsequent crystallization step (S322) crystallizes the second thin film layer 320 using plasma. After the second deposition step (S22) and the second parallel crystallization step (S321) are performed, the second subsequent crystallization step (S322) can be performed. Accordingly, in the thin film manufacturing method according to the present invention, after the second thin film layer 320 is primary crystallized through the second parallel crystallization step (S321), the first thin film layer 130 can be secondary crystallized through the second subsequent crystallization step (S322). Therefore, the thin film manufacturing method according to the present invention can increase the crystallization ratio of the second thin film layer 320, and thus can manufacture a thin film that can further reduce current leakage even when formed to a thinner thickness. Accordingly, the thin film manufacturing method according to the present invention can contribute to manufacturing the thin film transistor 200 and the like to be finer and thinner. After the second subsequent crystallization step (S322) is performed, it can be performed again from the second adsorption step (S21).

[0067] Here, when the first thin film layer 310 is crystallized, first grain boundaries 311 (shown in FIG. 5) can be formed in the first thin film layer 310. The first grain boundaries 311 can be formed to penetrate the first thin film layer 310 along the direction in which the first thin film layer 310 is deposited. A plurality of the first grain boundaries 311 can be formed in the first thin film layer 310. When the second thin film layer 320 is crystallized, second grain boundaries 321 (shown in FIG. 5) can be formed in the second thin film layer 320. The second grain boundaries 321 can be formed to penetrate the second thin film layer 320 along the direction in which the second thin film layer 320 is deposited. A plurality of the second grain boundaries 321 can be formed in the second thin film layer 320.

[0068] In this case, when the first thin film layer 310 and the second thin film layer 320 are deposited using the same high-k dielectric material and crystallized under the same process conditions, the first grain boundaries 311 and the second grain boundaries 321 can be connected to each other. As a result, current leakage may occur through the first grain boundaries 311 and the second grain boundaries 321.

[0069] To prevent this, the first source gas and the second source gas can be made of different high dielectric constant materials. Thereby, in the thin film manufacturing method according to the present invention, even when the first thin film layer 310 and the second thin film layer 320 are crystallized under the same process conditions, the first grain boundaries 311 and the second grain boundaries 321 may not be connected to each other. That is, as shown in FIG. 5, the first grain boundaries 311 and the second grain boundaries 321 can be formed at positions shifted from each other. Therefore, the thin film manufacturing method according to the present invention can reduce current leakage through the first grain boundaries 311 and the second grain boundaries 321. In this case, in the first forming step (S10) and the second forming step (S20), the first thin film layer 310 and the second thin film layer 320 can be deposited using the first source gas and the second source gas different from each other. Thereafter, even when the crystallization step (S30) crystallizes the first thin film layer 310 and the second thin film layer 320 under the same process conditions, the first grain boundaries 311 and the second grain boundaries 321 can be formed at positions shifted from each other.

[0070] On the other hand, the crystallization step (S30) can also crystallize the first thin film layer 310 and the second thin film layer 320 under different process conditions. In this case, even if the first source gas and the second source gas are made of the same high dielectric constant material, the thin film manufacturing method according to the present invention can make the first grain boundaries 311 and the second grain boundaries 321 be formed at positions shifted from each other through the difference in the process conditions for crystallization. Therefore, the thin film manufacturing method according to the present invention can reduce current leakage through the first grain boundaries 311 and the second grain boundaries 321. The crystallization step (S30) can make the first grain boundaries 311 and the second grain boundaries 321 be formed at positions shifted from each other by crystallizing the first thin film layer 310 and the second thin film layer 320 at different crystallization ratios.

[0071] On the one hand, in the method for manufacturing a thin film according to the present invention, the first source gas and the second source gas are made of different high dielectric constant materials, and the first thin film layer 310 and the second thin film layer 320 can be crystallized under different process conditions. Thereby, since the distance by which the first grain boundary 311 and the second grain boundary 321 are shifted from each other can be increased, the method for manufacturing a thin film according to the present invention can further reduce the current leakage through the first grain boundary 311 and the second grain boundary 321. For example, the first crystallization step (S31) and the second crystallization step (S32) can perform crystallization under different process conditions by generating plasma using different plasma gases.

[0072] Referring to FIGS. 1 to 12, the method for manufacturing a thin film according to the present invention can also be implemented so as to crystallize only one of the first thin film layer 310 and the second thin film layer 320. For example, the crystallization step (S30) can be implemented to crystallize only the first thin film layer 310 and not crystallize the second thin film layer 320. In this case, as shown in FIG. 11, only the first thin film layer 310 has the first grain boundary 311 formed therein, and the second grain boundary 321 is not formed in the second thin film layer 320. For example, the crystallization step (S30) can be implemented to crystallize only the second thin film layer 320 and not crystallize the first thin film layer 310. In this case, as shown in FIG. 12, only the second thin film layer 320 has the second grain boundary 321 formed therein, and the first grain boundary 311 is not formed in the first thin film layer 310. Thus, the method for manufacturing a thin film according to the present invention can prevent current leakage from occurring through the grain boundary by implementing crystallization of only one of the first thin film layer 310 and the second thin film layer 320.

[0073] Referring to FIGS. 1 to 14, the method for manufacturing a thin film according to the present invention can include a third formation step (S50).

[0074] The third forming step (S50) forms a third thin film layer 340 on the substrate (S). The third forming step (S50) can form an amorphous third thin film layer 340. As a result, no crystal grain boundaries are formed in the third thin film layer 340. Therefore, even if the first source gas and the second source gas are the same and the first thin film layer 310 and the second thin film layer 320 are formed under the same process conditions and crystallized, the third thin film layer 340 can block the occurrence of current leakage through the first crystal grain boundary 311 and the second crystal grain boundary 321. The third forming step (S50) can also form a third thin film layer 340 having a lower crystallization ratio than each of the first thin film layer 310 and the second thin film layer 320. As a result, no crystal grain boundaries are formed in the third thin film layer 340, or a smaller number of crystal grain boundaries can be formed compared to each of the first thin film layer 310 and the second thin film layer 320. Therefore, even if the first source gas and the second source gas are the same and the first thin film layer 310 and the second thin film layer 320 are formed under the same process conditions and crystallized, the third thin film layer 340 can block the occurrence of current leakage through the first crystal grain boundary 311 and the second crystal grain boundary 321.

[0075] As shown in FIG. 14, the third thin film layer 340 can be disposed between the first thin film layer 310 and the second thin film layer 320. In this case, the third forming step (S50) can be performed after the first forming step (S10) is performed. The second forming step (S20) can be performed after the third forming step (S50) is performed. Although not shown in the figure, the third thin film layer 340 can also be disposed between the first thin film layer 310 and the lower film 330. In this case, the first forming step (S10) can be performed after the third forming step (S50) is formed. The third thin film layer 340 can also be disposed on the second thin film layer 320. In this case, the third forming step (S50) can be performed after the second forming step (S20) is performed. Although not shown in the figure, in the thin film manufacturing method according to the present invention, a plurality of third thin film layers 340 can be formed by performing the third forming step (S50) a plurality of times. In this case, the third thin film layers 340 can be arranged to be separated from each other. Thereby, the third thin film layers 340 can block the occurrence of current leakage through grain boundaries at different positions from each other.

[0076] In the third forming step (S50), after injecting a third source gas to adsorb a third source substance contained in the third source gas onto the substrate (S), a third reaction gas can be injected to form the third thin film layer 340 on the substrate (S). In this case, the third forming step (S50) can form the third thin film layer 340 on the substrate (S) by an atomic layer deposition (ALD) method. The third source gas can be made of a high dielectric constant material, but is not limited thereto, and can be made of other materials that are not high dielectric constant materials as long as they can block current leakage through grain boundaries. The third source gas can be injected through a first gas flow path 4a included in the injection unit 4. The third reaction gas reacts with the third source gas and can be injected through a second gas flow path 4b included in the injection unit 4. The third forming step (S50) can also be performed by injecting the third source gas and the third reaction gas together. In this case, the third forming step (S50) can form the third thin film layer 340 on the substrate (S) by a chemical vapor deposition (CVD) method.

[0077] Hereinafter, examples of the thin film according to the present invention will be described in detail.

[0078] Referring to FIGS. 1 to 14, the thin film according to the present invention can be manufactured by the method for manufacturing a thin film according to the present invention described above. The thin film according to the present invention can be embodied by an insulating layer 210 disposed between the gate electrode and the semiconductor layer 230 in the thin film transistor 200.

[0079] The thin film according to the present invention can include the first thin film layer 310 and the second thin film layer 320.

[0080] The first thin film layer 310 can be formed on the substrate (S) using a mixture containing a high dielectric constant material. In the thin film according to the present invention, the first thin film layer 310 can be crystallized by plasma. Since the thin film according to the present invention is embodied such that the first thin film layer 310 has a dielectric constant that can reduce current leakage while being formed with a thin thickness, it can contribute to manufacturing the thin film transistor 200 and the like with finer and thinner thicknesses. The first thin film layer 310 can also be formed on the lower film 330. Although not shown in the figure, the thin film according to the present invention can also include a plurality of the first thin film layers 310. The first thin film layers 310 can be arranged so as to be separated from each other.

[0081] The first thin film layer 310 can be formed of a mixture containing at least one of hafnium and zirconium. The first thin film layer 310 can also be formed of a mixture containing at least one of hafnium, zirconium, and aluminum. The first thin film layer 310 can be deposited on the substrate (S) through the first forming step (S10) and can be crystallized through the crystallization step (S30).

[0082] The first thin film layer 310 can be formed to have a thickness of 30 Å or less and can be crystallized to have a dielectric constant of 30 K or more. The first thin film layer 310 can be formed to be crystallized over the entire deposition surface to have a thickness of 30 Å or less and a dielectric constant of 30 K or more. Thereby, the first thin film layer 310 can be embodied to reduce current leakage while being formed with a thin thickness.

[0083] On the other hand, the dielectric constant of the first thin film layer 310 can be determined by the following formula (1).

[0084]

Equation

[0085] In the formula 1, C OXC may be the oxide capacitance of the thin film layer, D may be the thickness of the thin film layer, and A may be the area of the thin film layer. The dielectric constant of the first thin film layer 310 calculated through Equation 1 can be implemented to be 30K or more.

[0086] The first thin film layer 310 can be formed to have an EOT (Equivalent Oxide Thickness) of 6.5 Å or less. EOT indicates how much thickness effect is shown when a high-k material is compared with silicon dioxide (SiO2). That is, it means the thickness of the high-k material when it has the same capacitance as silicon dioxide (SiO2). By forming the first thin film layer 310 to have an EOT of 6.5 Å or less, it can be implemented to reduce current leakage while being formed with a thin thickness.

[0087] Referring to FIGS. 1 to 14, the second thin film layer 320 can be formed on the substrate (S) using a mixture containing a high-k material. The second thin film layer 320 can also be formed on the first thin film layer 310. Although not shown in the figure, the first thin film layer 310 can also be formed on the second thin film layer 320. The second thin film layer 320 can be formed of a mixture containing at least one of hafnium and zirconium. The second thin film layer 320 can also be formed of a mixture containing at least one of hafnium, zirconium, and aluminum. The second thin film layer 320 can be deposited on the substrate (S) through the second forming step (S20). Although not shown in the figure, the thin film according to the present invention can also include a plurality of the second thin film layers 320. The second thin film layers 320 can be arranged to be spaced apart from each other.

[0088] The second thin film layer 320 can be formed in an amorphous state. In this case, as shown in FIG. 11, only the first thin film layer 310 has the first grain boundary 311 formed therein, and the second thin film layer 320 does not have the second grain boundary 321 formed therein. Accordingly, the thin film manufacturing method according to the present invention can prevent current leakage from occurring through the grain boundary by embodying to crystallize only the first thin film layer 310.

[0089] The second thin film layer 320 can be crystallized by plasma. Thereby, the thin film according to the present invention is embodied to have a dielectric constant capable of reducing current leakage while the second thin film layer 320 is formed to have a thin thickness, and thus can contribute to manufacturing the thin film transistor 200 or the like to be finer and thinner. The second thin film layer 320 can be crystallized through the crystallization process (S30).

[0090] The second thin film layer 320 can be crystallized at a crystallization ratio different from that of the first thin film layer 310. Thereby, the second grain boundary 321 formed in the second thin film layer 320 and the first grain boundary 311 formed in the first thin film layer 310 may be formed at positions shifted from each other and may not be connected to each other. Therefore, the thin film according to the present invention can reduce current leakage through the first grain boundary 311 and the second grain boundary 321. In this case, the second thin film layer 320 and the first thin film layer 310 can be formed using different high dielectric constant materials. Thereby, even if the second thin film layer 320 and the first thin film layer 310 are crystallized under the same process conditions, the second grain boundary 321 and the first grain boundary 311 can be formed at positions shifted from each other. The second thin film layer 320 and the first thin film layer 310 can also be crystallized under different process conditions. Thereby, even if the second thin film layer 320 and the first thin film layer 310 are formed of the same high dielectric constant material, the second grain boundary 321 and the first grain boundary 311 can be formed at positions shifted from each other. The second thin film layer 320 and the first thin film layer 310 can be formed using different high dielectric constant materials and can also be crystallized under different process conditions.

[0091] The second thin film layer 320 is formed to have a thickness of 40 Å or more and 70 Å or less, and can be crystallized to have a dielectric constant of 20 K or more and 30 K or less. Here, when the second thin film layer 320 is formed to have a thickness of less than 40 Å, current leakage increases, and when the second thin film layer 320 is formed to have a thickness exceeding 70 Å, it is difficult to make it thinner. When the second thin film layer 320 is crystallized to have a dielectric constant of less than 20 K, it is difficult to reduce current leakage, and when the second thin film layer 320 is crystallized to have a dielectric constant exceeding 30 K, it becomes conductive and hardly functions as an insulating layer. Considering this, the thin film according to the present invention can be embodied such that the second thin film layer 320 is formed to have a thickness of 40 Å or more and 70 Å or less and is crystallized to have a dielectric constant of 20 K or more and 30 K or less. On the other hand, the dielectric constant of the second thin film layer 320 can be determined by Equation 1.

[0092] The second thin film layer 320 can be formed to be partially crystallized to have a thickness of 40 Å or more and 70 Å or less and to have a dielectric constant of 20 K or more and 30 K or less. In this case, when the thin film according to the present invention is compared with the case where all of the second thin film layer 320 is crystallized, the process time can be shortened and it can be embodied to have a thickness and a dielectric constant sufficient for use as the insulating layer 210, so that productivity can be improved.

[0093] The second thin film layer 320 can be formed to have an EOT of 6.5 Å or more and 9.7 Å or less. When the EOT of the second thin film layer 320 is less than 6.5 Å, current leakage increases, and when the EOT of the second thin film layer 320 exceeds 9.7 Å, it is difficult to make it thinner. Considering this, the second thin film layer 320 can be embodied to reduce current leakage while being formed with a thin thickness by being formed to have an EOT of 6.5 Å or more and 9.7 Å or less.

[0094] Referring to FIGS. 1 to 14, the thin film according to the present invention may include a third thin film layer 340.

[0095] The third thin film layer 340 can be formed on the substrate (S) using a mixture containing a high dielectric constant material. The third thin film layer 340 can be formed on the substrate (S) through the third forming step (S50). The third thin film layer 340 can be formed of a mixture containing at least one of hafnium and zirconium. The third thin film layer 340 can also be formed of a mixture containing at least one of hafnium, zirconium, and aluminum. As shown in FIG. 14, the third thin film layer 340 can be disposed between the first thin film layer 310 and the second thin film layer 320. Although not shown in the figure, the third thin film layer 340 can also be disposed between the first thin film layer 310 and the lower film 330. The third thin film layer 340 can also be disposed on the second thin film layer 320. Although not shown in the figure, the thin film according to the present invention can also include a plurality of the third thin film layers 340. The third thin film layers 340 can be disposed spaced apart from each other.

[0096] The third thin film layer 340 can be formed to be amorphous. Thereby, grain boundaries are not formed in the third thin film layer 340. Therefore, even when the first thin film layer 310 and the second thin film layer 320 are formed using the same source gas and crystallized under the same process conditions, the third thin film layer 340 can block the occurrence of current leakage through the first grain boundary 311 and the second grain boundary 321.

[0097] The third thin film layer 340 can be crystallized with a lower crystallization ratio compared to each of the first thin film layer 310 and the second thin film layer 320. Thereby, grain boundaries are not formed in the third thin film layer 340, or a smaller number of grain boundaries can be formed compared to each of the first thin film layer 310 and the second thin film layer 320. Therefore, even when the first thin film layer 310 and the second thin film layer 320 are formed using the same source gas and crystallized under the same process conditions, the third thin film layer 340 can block the occurrence of current leakage through the first grain boundary 311 and the second grain boundary 321.

[0098] Hereinafter, embodiments of the substrate processing apparatus according to the present invention will be described in detail with reference to the accompanying drawings.

[0099] Referring to FIGS. 1 to 15, the substrate processing apparatus 1 according to the present invention can deposit a thin film by a plasma chemical vapor deposition (PCVD) method and crystallize the thin film. The method for manufacturing the thin film according to the present invention described above can be performed through the substrate processing apparatus 1 according to the present invention. The thin film according to the present invention described above can be manufactured using the substrate processing apparatus 1 according to the present invention.

[0100] The substrate processing apparatus 1 according to the present invention can include a chamber 2, a susceptor 3, an upper dome 5, and an antenna 6.

[0101] The chamber 2 can include side walls. The chamber 2 can be formed of a conductor. The internal space of the chamber 2 can be in a cylindrical form. The external form of the chamber 2 can be in a rectangular parallelepiped shape. The chamber 2 can be cooled by cooling water. The chamber 2, the upper dome 5, and the lower dome 7 are coupled to provide a sealed space. A substrate entrance / exit (not shown) can be provided on a side surface of the chamber 2. The chamber 2 can include an exhaust port (not shown) formed on a side surface facing the substrate entrance / exit. The exhaust port can be connected to a high-vacuum pump (not shown). The high-vacuum pump can be a turbo molecular pump. The high-vacuum pump maintains a low base pressure and can maintain a pressure of several torr or less even during the progress of the process. The upper surface of the exhaust port can be the same as or lower than the upper surface of the substrate entrance / exit.

[0102] The susceptor 3 supports the substrate (S). The susceptor 3 can support one substrate (S) or a plurality of substrates (S). When a plurality of substrates (S) are supported by the susceptor 3, a process step can be performed on the plurality of substrates (S) at once to manufacture a thin film on each of the substrates (S). The susceptor 3 can be disposed inside the chamber 2.

[0103] The upper dome 5 covers the upper surface of the chamber 2. The upper dome 5 can be formed of a transparent dielectric material. For example, the upper dome 5 can be formed of quartz or sapphire. The upper dome 5 can be inserted into and coupled to a jaw (step) formed on the upper surface of the chamber 2. The upper dome 5 can form a coupling portion coupled to the chamber 2 in the form of a washer for vacuum sealing. The upper dome 5 can also be formed in an arc shape or an elliptical shape. The upper dome 5 can transmit infrared rays incident from below. The upper dome 5 can also be formed of a ceramic having better corrosion resistance and corrosiveness than quartz.

[0104] The antenna 6 is disposed above the upper dome 5. The antenna 6 can form an inductively coupled plasma. The antenna 6 can include two one-turn unit antennas. In this case, the two one-turn unit antennas can be arranged to overlap each other on the upper and lower surfaces. The two one-turn unit antennas can be connected in parallel to the RF power supply 140. The width directions of the two one-turn unit antennas can be arranged vertically. In the method for manufacturing a thin film according to the present invention described above, the plasma can be formed by the antenna 6. On the other hand, in the method for manufacturing a thin film according to the present invention described above, the source gas and the reaction gas can be injected through an injector (not shown) formed to extend long toward the processing space 100 in the upper dome 5 and the lower dome 7. The injector can function as the injection unit described above. The substrate processing apparatus 1 according to the present invention can also include a plurality of the injectors.

[0105] The lower dome 7 can be coupled to the chamber 2 so as to cover the lower surface of the chamber 2. The lower dome 7 can be formed of a transparent dielectric. For example, the lower dome 7 can be formed of quartz or sapphire. The lower dome 7 can include a funnel-shaped lower dome body, a washer-shaped coupling portion that couples to a jaw formed on the lower surface of the chamber 2, and a cylindrical pipe connected to the center of the lower dome body. The lower dome 7 can be inserted into and coupled to a jaw formed on the lower surface of the chamber 2. The lower dome 7 can form a coupling portion 158a that couples to the chamber 2 in the form of a washer for vacuum sealing. The drive shaft for moving the susceptor 3 can be inserted and disposed inside the cylindrical pipe. A purge gas can also be supplied through the lower dome 7. In this case, the purge gas can be supplied through the cylindrical pipe.

[0106] The substrate processing apparatus 1 according to the present invention can include an electromagnetic wave shielding housing 8. The electromagnetic wave shielding housing 8 can be arranged to surround the antenna 6. The electromagnetic wave shielding housing 8 can be heated by a heater. The infrared rays reflected by the electromagnetic wave shielding housing 8 can pass through the upper dome 5 and be incident on the substrate (S).

[0107] As described above, the present invention is not limited to the above-described embodiments and the accompanying drawings, and it will be apparent to those having ordinary knowledge in the technical field to which the present invention pertains that various substitutions, modifications, and changes are possible without departing from the technical idea of the present invention.

Claims

1. A first forming step of forming a first thin film layer on a substrate by injecting a first source gas made of a high dielectric constant (High-K) material, A second forming step of forming a second thin film layer on the substrate by injecting a second source gas made of a high dielectric constant material, and A thin film manufacturing method including a crystallization step of crystallizing at least one of the first thin film layer and the second thin film layer using plasma.

2. Before the first forming step is performed, it includes a removing step of removing an oxide film from a lower film formed on the substrate, The thin film manufacturing method according to claim 1, wherein the first forming step forms the first thin film layer on the lower film from which the oxide film has been removed.

3. The thin film manufacturing method according to claim 1, wherein the first source gas and the second source gas are made of different high dielectric constant materials from each other.

4. The first forming step forms the first thin film layer using a first source gas containing at least one high dielectric constant material of hafnium (Hf) and zirconium (Zr), The thin film manufacturing method according to claim 1, wherein the second forming step forms the second thin film layer using a second source gas containing at least one high dielectric constant material of hafnium (Hf) and zirconium (Zr).

5. The first forming step is A first adsorption step of injecting the first source gas to adsorb a high dielectric constant material on the substrate, and The thin film manufacturing method according to claim 1, characterized in that it includes a first vapor deposition step of injecting a first reaction gas that reacts with the first source gas to vapor-deposit the first thin film layer made of a high dielectric constant material on the substrate.

6. The crystallization step includes a first crystallization step of crystallizing the first thin film layer, The thin film manufacturing method according to claim 5, wherein the first crystallization step is performed after the first vapor deposition step or together with the first vapor deposition step.

7. The first vapor deposition step performs vapor deposition and crystallization together using oxygen (O ２ ) plasma as the first reaction gas. The method for manufacturing a thin film according to claim 5, characterized in that.

8. The first vapor deposition step is characterized by injecting ozone (O ３ ) as the first reaction gas, and the method for manufacturing a thin film according to claim 5.

9. The crystallization step includes a first crystallization step of crystallizing the first thin film layer, The first crystallization step is A first parallel crystallization step performed together with the first vapor deposition step, and The thin film manufacturing method according to claim 5, characterized in that it includes a first subsequent crystallization step performed after the first vapor deposition step and the first parallel crystallization step are performed.

10. The crystallization process uses a plasma gas containing at least one of helium (He), argon (Ar), ammonia (NH ３ ), oxygen (O ２ ), and hydrogen (H ２ ) to generate plasma. The thin film manufacturing method according to claim 1 is characterized by this.

11. The thin film manufacturing method according to claim 1, wherein the crystallization step crystallizes the first thin film layer and the second thin film layer at different crystallization ratios.

12. The thin film manufacturing method according to claim 1, wherein the crystallization step crystallizes only the first thin film layer.

13. including a third forming step of forming a third thin film layer on the substrate, The third forming step is characterized by forming an amorphous third thin film layer or a third thin film layer having a crystallization ratio lower than that of each of the first thin film layer and the second thin film layer. The thin film manufacturing method according to claim 1.

14. A first thin film layer formed on a substrate using a high dielectric constant (High-K) material and crystallized by plasma, and A thin film including a second thin film layer formed on the substrate using a high dielectric constant material.

15. The thin film according to claim 14, wherein the second thin film layer crystallizes at a crystallization ratio different from that of the first thin film layer or is formed in an amorphous state.

16. The thin film according to claim 14, wherein the first thin film layer and the second thin film layer are formed using different high dielectric constant materials.

17. The first thin film layer is formed using at least one high dielectric constant material of hafnium (Hf) and zirconium (Zr), The thin film according to claim 14, wherein the second thin film layer is formed using at least one high dielectric constant material of hafnium (Hf) and zirconium (Zr).

18. including a third thin film layer formed on the substrate, The thin film according to claim 14, wherein the third thin film layer is formed in an amorphous state or is crystallized with a crystallization ratio lower than that of each of the first thin film layer and the second thin film layer.

19. A chamber, A substrate support portion for supporting a substrate inside the chamber, An upper dome formed on the upper surface of the chamber, An antenna disposed above the upper dome for forming inductively coupled plasma, and A substrate processing apparatus, wherein the upper dome is formed of ceramic.

Images