Gas mixture as a co-gas for ion implantation

Abstract

The present disclosure relates to an ion implantation tool source and a gas delivery system. The system can include a gas source comprising one or more gas supply containers, an ion implanter arc chamber connected to the gas source, and a gallium target contained within the ion implanter arc chamber. The one or more gas supply containers can supply a mixture of hydrogen and fluoride gas. The hydrogen can be from 5% to 60% of the gas mixture.

Description

Technical Field

[0001] The present disclosure relates to ion implantation. More specifically, the present disclosure relates to using a gas mixture as a co-gas for implantation, such as gallium implantation.

Background Art

[0002] Ion implantation can be used in the manufacture of semiconductor devices.

Summary of the Invention

[0003] The present disclosure relates to using a gas mixture as a co-gas for implantation, such as gallium implantation. In some embodiments, the gas mixture can include using boron trifluoride (BF3) / hydrogen (H2), or other fluoride gas and hydrogen mixtures, as a co-gas for gallium implantation. In some embodiments, gallium implantation can be performed by using a gallium-containing sputtering target, such as gallium nitride (GaN), gallium oxide (Ga2O3), an isotopically enriched analog of gallium nitride (GaN) or gallium oxide (Ga2O3) enriched to exceed the natural abundance ratio of 69Ga or 71Ga, or a combination thereof. The fluoride co-gas may be used to increase the gallium ion (Ga+) beam current. One potential drawback of fluoride gases is that they can react with the arc chamber (e.g., a tungsten arc chamber), thereby causing tungsten deposition on the arc chamber and the electrode region (e.g., the cathode). In some examples, tungsten deposition can degrade the source conditions and affect the source lifetime.

[0004] The present disclosure uses boron trifluoride (BF3) and / or hydrogen (H2), or other fluoride gas and hydrogen mixtures, as co-gases for gallium-containing sputtering targets such as GaN or Ga2O3. In some embodiments, the hydrogen mixture helps to reduce the halogen cycle and tungsten deposition, and thus improve the source lifetime.

[0005] In some aspects, the techniques described herein relate to an ion implantation tool source and gas delivery system that includes a gas source including one or more gas supply containers, the one or more gas supply containers being configured to supply a mixture of gases including hydrogen and a fluoride, wherein hydrogen constitutes 5% to 60% of the mixture of gases, an ion implanter arc chamber connected to the gas source, and a gallium target contained within the ion implanter arc chamber.

[0006] In some aspects, the techniques described herein relate to an ion implantation tool source and gas delivery system in which the gallium target includes gallium nitride (GaN) or gallium oxide (Ga2O3).

[0007] In some aspects, the techniques described herein relate to an ion implantation tool source and gas delivery system in which hydrogen includes hydrogen (H2), phosphine (PH3), AsH3, SiH4, B2H6, CH4, NH3, GeH4, or combinations thereof.

[0008] In some aspects, the techniques described herein relate to an ion implantation tool source and gas delivery system in which hydrogen includes hydrogen (H2).

[0009] In some aspects, the techniques described herein relate to an ion implantation tool source and gas delivery system in which hydrogen is generated from a hydrogen (H2) generator.

[0010] In some aspects, the techniques described herein relate to an ion implantation tool source and gas delivery system in which hydrogen is not from a gas supply container.

[0011] In some embodiments, the techniques described herein relate to ion implantation tool sources and gas delivery systems where the fluoride includes F2 (fluorine), BF3 (boron trifluoride), SiF4 (silicon tetrafluoride), GeF4 (germanium tetrafluoride), PF3 (phosphorus trifluoride), PF5 (phosphorus pentafluoride), XeF2, CF4, CHF3, SF6, NF3, WF6, B2F4, Si2F6, or combinations thereof.

[0012] In some embodiments, the techniques described herein relate to ion implantation tool sources and gas delivery systems where the fluoride includes BF3 (boron trifluoride).

[0013] In some embodiments, the techniques described herein relate to ion implantation tool sources and gas delivery systems where the BF3 (boron trifluoride) is natural BF3 (boron trifluoride).

[0014] In some embodiments, the techniques described herein relate to ion implantation tool sources and gas delivery systems where the BF3 (boron trifluoride) is enriched BF3 (boron trifluoride).

[0015] In some embodiments, the techniques described herein relate to ion implantation tool sources and gas delivery systems where the gas mixture consists essentially of BF3 (boron trifluoride) and hydrogen (H2).

[0016] In some embodiments, the techniques described herein relate to ion implantation tool sources and gas delivery systems where the gas line connects the ion implanter arc chamber to the gas source.

[0017] In some embodiments, the techniques described herein relate to ion implantation tool sources and gas delivery systems where hydrogen constitutes 10% - 40% of the gas mixture.

[0018] In some embodiments, the techniques described herein relate to an ion implantation tool source and a gas delivery system in which hydrogen constitutes 15% to 35% of the gas mixture.

[0019] In some embodiments, the techniques described herein relate to a method of forming gallium ions, the method comprising supplying a gas mixture from a gas source to an ion implanter arc chamber, the gas mixture comprising hydrogen and a fluoride, hydrogen constituting 5% to 60% of the gas mixture, and contacting the gas mixture with a gallium target contained within the ion implanter arc chamber.

[0020] In some embodiments, the techniques described herein relate to a method in which the gallium target comprises gallium nitride (GaN) or gallium oxide (Ga2O3).

[0021] In some embodiments, the techniques described herein relate to a method in which hydrogen comprises hydrogen (H2), phosphine (PH3), AsH3, SiH4, B2H6, CH4, NH3, GeH4, or a combination thereof.

[0022] In some embodiments, the techniques described herein relate to a method in which hydrogen comprises hydrogen (H2).

[0023] In some embodiments, the techniques described herein relate to a method in which hydrogen is generated from a hydrogen (H2) generator.

[0024] In some embodiments, the techniques described herein relate to a method in which hydrogen is not from a gas supply container.

[0025] In some embodiments, the techniques described herein relate to a method in which the fluoride comprises F2 (fluorine), BF3 (boron trifluoride), SiF4 (silicon tetrafluoride), GeF4 (germanium tetrafluoride), PF3 (phosphorus trifluoride), PF5 (phosphorus pentafluoride), XeF2, CF4, CHF3, SF6, NF3, WF6, B2F4, Si2F6, or a combination thereof.

[0026] In some embodiments, the techniques described herein relate to methods in which the fluoride comprises BF3 (boron trifluoride).

[0027] In some embodiments, the techniques described herein relate to methods in which BF3 (boron trifluoride) is natural BF3 (boron trifluoride).

[0028] In some embodiments, the techniques described herein relate to methods in which BF3 (boron trifluoride) is enriched BF3 (boron trifluoride).

[0029] In some embodiments, the techniques described herein relate to methods in which the gas mixture consists essentially of BF3 (boron trifluoride) and hydrogen (H2).

[0030] In some embodiments, the techniques described herein relate to methods in which the gas line connects an ion implanter arc chamber to a gas source.

[0031] In some embodiments, the techniques described herein relate to methods in which hydrogen constitutes 10% to 40% of the gas mixture.

[0032] In some embodiments, the techniques described herein relate to methods in which hydrogen constitutes 15% to 35% of the gas mixture.

[0033] Some embodiments of the present disclosure are described herein by way of example only with reference to the accompanying drawings. Here, referring particularly to the drawings in detail, it is emphasized that the embodiments shown are by way of example and for the purpose of an illustrative description of embodiments of the present disclosure. In this regard, the description made with the use of the drawings will clarify to those skilled in the art how embodiments of the present disclosure can be implemented.

Brief Description of the Drawings

[0034]

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DETAILED DESCRIPTION OF THE INVENTION

[0035] Among these disclosed advantages and improvements, other objects and advantages of the present disclosure will become apparent from the following description taken in conjunction with the accompanying drawings. Although detailed embodiments of the present disclosure are disclosed herein, it should be understood that the disclosed embodiments are merely illustrative examples of the present disclosure which may be embodied in various forms. Further, each of the examples given with respect to the various embodiments of the present disclosure is intended to be illustrative and not limiting.

[0036] The entire contents of all prior patents and publications referred to herein are incorporated by reference.

[0037] Throughout the specification and claims, the following terms take the meanings explicitly associated herein unless the context dictates otherwise. As used herein, the phrases "in one embodiment," "in an embodiment," and "in some embodiments" do not necessarily refer to the same embodiment, but may. Further, as used herein, the phrases "in another embodiment" and "in some other embodiments" do not necessarily refer to different embodiments, but may. All embodiments of the present disclosure are intended to be combinable without departing from the scope or spirit of the present disclosure.

[0038] As used herein, the term "based on" is not exclusive and, unless the context dictates otherwise, allows for being based on additional factors not described. Further, throughout the specification, the meanings of "a," "an," and "the" include pluralities. The meaning of "in" includes "in" and "on."

[0039] As used herein, the term "between" does not necessarily require being directly adjacent to other elements. Generally, this term means a configuration where something is sandwiched between two or more other things. At the same time, the term "between" can represent something directly adjacent to two opposing things. Thus, in any one or more of the embodiments disclosed herein, a particular structural component disposed between two other structural elements can be disposed directly between both of the two other structural elements such that the particular structural component is in direct contact with both of the two other structural elements It can be arranged to be directly adjacent to only one of the two other structural elements such that the particular structural component is in direct contact with only one of the two other structural elements. It can be arranged to be indirectly adjacent to only one of the two other structural elements such that the particular structural component is not in direct contact with only one of the two other structural elements, and there is another element juxtaposing the particular structural component and only one of the two other structural elements. It can be arranged indirectly between both of the two other structural elements such that the particular structural component is not in direct contact with both of the two other structural elements, and other features can be arranged between them, or Any combination thereof.

[0040] As used herein, "embedded" means that a first material is distributed throughout a second material.

[0041] The present disclosure relates to using a gas mixture as a co-gas for implantation, such as gallium implantation. In some embodiments, the gas mixture can include using BF3 / H2, or other fluoride gas and hydrogen mixtures, as a co-gas for gallium implantation. In some embodiments, gallium implantation can be performed by using a gallium-containing sputtering target, such as GaN or Ga2O3.

[0042] In other embodiments, the gallium implantation may be carried out by using, but not limited to, gallium fluoride, gallium chloride, gallium bromide, gallium iodide, gallium nitride, gallium oxide, gallium arsenide, gallium phosphide, trimethylgallium Ga(CH3)3, gallium nitrate Ga(NO3)3, gallium hydroxide Ga(OH)3, gallium antimonide GaSb, gallium sulfide, gallium selenide, gallane, trihydride gallium CH3, digallane Ga2H6, gallium telluride GaTe, gallium indium phosphide, gallium phosphorus arsenide, gallium indium arsenide, gallium aluminum arsenide, and / or a gallium-containing sputtering target containing gallium.

[0043] The fluoride co-gas may be used to increase the gallium ion (Ga+) beam current. One potential drawback of the fluoride gas is that the fluoride gas may react with the ion injector arc chamber (e.g., tungsten arc chamber), thereby causing tungsten deposition on the ion injector arc chamber and the electrode region (e.g., cathode). In some examples, the tungsten deposition may deteriorate the source conditions and affect the source lifetime.

[0044] The present disclosure uses BF3 / H2, or other fluoride gas and hydrogen mixtures, as co-gases for gallium-containing sputtering targets such as GaN or Ga2O3. In some embodiments, the hydrogen mixture helps reduce the halogen cycle and tungsten deposition, thus improving the source life. In some embodiments, depending on the H2 percentage in the mixture, the tungsten ion beam (W+ beam) reduction can be at least 25%, in other examples at least 35%, in other examples 45%, and in other examples 55%. The reduction of tungsten ions in the plasma indicates less tungsten deposition, thus extending the source life. In related and associated applications, when an amount of tungsten ions is introduced into the gas phase and plasma during the ion implantation process, the tungsten deposition or coating inside and / or around the arc chamber increases. The invention described herein shows how a mixture, at a specific concentration and with a sputtering target containing gallium, can reduce deposition and improve source life.

[0045] Instead of the fluoride reacting with the ion implanter arc chamber, hydrogen binds to the fluoride, thereby blocking the reaction between the fluoride and the ion implanter arc chamber. For example, when the ion implanter arc chamber is a tungsten arc chamber, the fluoride blocks the reaction between the fluoride and the tungsten arc chamber, thereby reducing tungsten deposition on the ion implanter arc chamber and the electrode region (e.g., the cathode). In some embodiments, the reduction of tungsten on the ion implanter arc chamber can extend the life of the ion implanter arc chamber and / or reduce maintenance.

[0046] FIG. 1 shows an ion implantation tool source and gas delivery system 100. In some embodiments, the ion implantation tool source and gas delivery system 100 includes a gas source 110, a gas line 120, and an ion implanter arc chamber 130. The ion implanter arc chamber 130 is connected to the gas source 110. In some embodiments, the gas line 120 connects the ion implanter arc chamber 130 to the gas source 110. In some embodiments, a target 140 (e.g., a gallium target) is included within the ion implanter arc chamber 130.

[0047] In some embodiments, the target 140 is a gallium target and includes gallium nitride (GaN), gallium oxide (Ga2O3), GaCl3, GaF3, or Ga x Z y where x and y are numbers that can be 1, 2, 3, 4, 5, or 6. "Z" represents any element.

[0048] In some embodiments, the gas source 110 includes one or more gas supply containers. In some embodiments, the gas source 110 supplies gas at near atmospheric pressure. In some embodiments, the one or more gas supply containers are configured to supply a gas mixture containing hydrogen and fluoride. In some embodiments, hydrogen constitutes 5% to 60% of the gas mixture. In some embodiments, hydrogen constitutes 10% to 40% of the gas mixture. In some embodiments, hydrogen constitutes 15% to 35% of the gas mixture. In some embodiments, the hydrogen in the gas mixture includes 5% to 60%, 5% to 55%, 5% to 50%, 5% to 45%, 5% to 40%, 5% to 35%, 5% to 30%, 5% to 25%, 5% to 20%, 5% to 15%, 5% to 10%, 10% to 60%, 15% to 60%, 20% to 60%, 25% to 60%, 30% to 60%, 35% to 60%, 40% to 60%, 45% to 60%, 50% to 60%, or any range or sub-range therebetween. In other embodiments, the range of hydrogen in the mixture may extend to 13% to 60%, 13% to 50%, 13% to 35%, 13% to 33%, 33% to 60%, 33% to 50%, 33% to 35%, or any range or sub-range therebetween.

[0049] In some embodiments, the one or more gas supply containers can include one or more gas cylinders. In some embodiments, the gas mixture of the present disclosure can be pre-mixed within the same gas cylinder. The gas mixture of the present disclosure can also be made to flow in parallel from different cylinders. The gas mixture of the present disclosure can also be a combination of pre-mixing in a gas cylinder and parallel flow with other cylinders. For example, in some embodiments, BF3 can be pre-mixed with H2 in one cylinder. In some embodiments, the hydrogen does not come from a gas supply container. In some embodiments, the hydrogen is generated from a hydrogen (H2) generator. In some embodiments, BF3 can be made to flow in parallel with H2 in a separate H2 gas cylinder or H2 generator.

[0050] In some embodiments, the hydrogen of the gas mixture includes hydrogen (H2), phosphine (PH3), AsH3, SiH4, B2H6, CH4, NH3, GeH4, or combinations thereof. For example, the hydrogen of the mixed gas can include hydrogen (H2). For example, the hydrogen of the mixed gas includes hydrogen (H2), phosphine (PH3), and AsH3.

[0051] In some embodiments, the fluoride of the gas mixture includes F2 (fluorine), BF3 (boron trifluoride), SiF4 (silicon tetrafluoride), GeF4 (germanium tetrafluoride), PF3 (phosphorus trifluoride), PF5 (phosphorus pentafluoride), XeF2, CF4, CHF3, SF6, NF3, WF6, B2F4, Si2F6, or combinations thereof. For example, the fluoride of the gas mixture includes BF3 (boron trifluoride). For example, the fluoride of the gas mixture includes F2 (fluorine), BF3 (boron trifluoride), and SiF4 (silicon tetrafluoride).

[0052] The gas mixture can include any combination of the hydrogen described in this disclosure and the fluoride described in this disclosure. For example, in some embodiments, the gas mixture can include SiH4, B2H6, NF3, and WF6. In some embodiments, the gas mixture includes, consists essentially of, or consists of BF3 (boron trifluoride) and hydrogen (H2).

[0053] In some embodiments, BF3 (boron trifluoride) is natural BF3 (boron trifluoride). In some embodiments, BF3 (boron trifluoride) is enriched BF3 (boron trifluoride).

[0054] Figure 2 shows a flowchart of a method 200 for forming gallium ions. In some embodiments, method 200 includes supplying 210 a mixture of gases from a gas source to an ion implanter arc chamber. In some embodiments, method 200 further includes contacting 220 the mixture of gases with a gallium target contained within the ion implanter arc chamber. The mixture of gases, gas source, ion implanter arc chamber, target (e.g., gallium target) can be any of the embodiments described herein.

[0055] Figure 3 shows the stability of the Ga+ beam current in the range of 0 - 50% when flowing BF3 / H2 over a GaN target.

[0056] Figure 4 shows the W+ beam reduction versus the percentage of hydrogen in the mixture. As expected, the tungsten beam drops rapidly from 0 - 33% and then begins to level off after 33% of the mixture.

[0057] Figure 5 shows the stability of the Ga+ beam current in the range of 0 - 50% when flowing BF3 / H2 over a Ga2O3 target.

[0058] Figure 6 shows the W+ beam reduction versus the percentage of hydrogen in the mixture. As expected, the tungsten ion beam drops rapidly from 0 - 33% and then begins to level off after 33% of the mixture. As shown in Figure 6, the tungsten ion beam in the plasma drops by approximately 46% from 0% H2 to 33% H2. Thus, this reduction correlates with an improvement in the source lifetime of the gas.

[0059] Aspects

[0060] Various aspects are described below. It should be understood that any one or more of the features described in the following aspects can be combined with any one or more of the other aspects.

[0061] Aspect 1. A gas source comprising one or more gas supply containers, wherein the one or more gas supply containers are configured to supply a gas mixture containing hydrogen and fluoride, hydrogen constitutes 5% to 60% of the gas mixture, an ion implanter arc chamber connected to the gas source, and a gallium target contained within the ion implanter arc chamber, an ion implantation tool source and a gas delivery system.

[0062] Aspect 2. The ion implantation tool source and gas delivery system according to Aspect 1, wherein the gallium target contains gallium nitride (GaN) or gallium oxide (Ga2O3).

[0063] Aspect 3. The ion implantation tool source and gas delivery system according to Aspect 1 or 2, wherein hydrogen contains hydrogen (H2), phosphine (PH3), AsH3, SiH4, B2H6, CH4, NH3, GeH4, or a combination thereof.

[0064] Aspect 4. The ion implantation tool source and gas delivery system according to any one of Aspects 1 to 3, wherein hydrogen contains hydrogen (H2).

[0065] Aspect 5. The ion implantation tool source and gas delivery system according to any one of Aspects 1 to 4, wherein hydrogen is generated from a hydrogen (H2) generator.

[0066] Aspect 6. The ion implantation tool source and gas delivery system according to any one of Aspects 1 to 5, wherein hydrogen is not from a gas supply container.

[0067] Aspect 7. The ion implantation tool source and gas delivery system according to any one of Aspects 1 to 6, wherein the fluoride contains F2 (fluorine), BF3 (boron trifluoride), SiF4 (silicon tetrafluoride), GeF4 (germanium tetrafluoride), PF3 (phosphorus trifluoride), PF5 (phosphorus pentafluoride), XeF2, CF4, CHF3, SF6, NF3, WF6, B2F4, Si2F6, or a combination thereof.

[0068] Aspect 8. The ion implantation tool source and gas delivery system according to any one of the preceding Aspects 1, wherein the fluoride contains BF3 (boron trifluoride).

[0069] Aspect 9. The ion implantation tool source and gas delivery system according to Aspect 8, wherein the BF3 (boron trifluoride) is natural BF3 (boron trifluoride).

[0070] Aspect 10. The ion implantation tool source and gas delivery system according to Aspect 8, wherein the BF3 (boron trifluoride) is enriched BF3 (boron trifluoride).

[0071] Aspect 11. The ion implantation tool source and gas delivery system according to any one of Aspects 1 to 10, wherein the gas mixture consists essentially of BF3 (boron trifluoride) and hydrogen (H2).

[0072] Aspect 12. The ion implantation tool source and gas delivery system according to any one of Aspects 1 to 11, wherein the gas line connects the ion implanter arc chamber to the gas source.

[0073] Aspect 13. The ion implantation tool source and gas delivery system according to any one of Aspects 1 to 12, wherein hydrogen constitutes 10% to 40% of the gas mixture.

[0074] Aspect 14. The ion implantation tool source and gas delivery system according to claim 1, wherein hydrogen constitutes 15% to 35% of the gas mixture.

[0075] Aspect 15. A method of forming gallium ions, the method comprising supplying a gas mixture from a gas source to an ion implanter arc chamber, the gas mixture containing hydrogen and a fluoride, hydrogen constituting 5% to 60% of the gas mixture, and contacting the gas mixture with a gallium target contained within the ion implanter arc chamber.

[0076] Aspect 16. The method according to Aspect 15, wherein the gallium target contains gallium nitride (GaN) or gallium oxide (Ga2O3).

[0077] Aspect 17. The method according to aspect 15 or 16, wherein the hydrogen comprises hydrogen (H2), phosphine (PH3), AsH3, SiH4, B2H6, CH4, NH3, GeH4, or a combination thereof.

[0078] Aspect 18. The method according to any one of aspects 15 to 17, wherein the hydrogen comprises hydrogen (H2).

[0079] Aspect 19. The method according to any one of aspects 15 to 18, wherein the hydrogen is generated from a hydrogen (H2) generator.

[0080] Aspect 20. The method according to any one of aspects 15 to 19, wherein the hydrogen is not from a gas supply container.

[0081] Aspect 21. The method according to any one of aspects 15 to 20, wherein the fluoride comprises F2 (fluorine), BF3 (boron trifluoride), SiF4 (silicon tetrafluoride), GeF4 (germanium tetrafluoride), PF3 (phosphorus trifluoride), or PF5 (phosphorus pentafluoride), XeF2, CF4, CHF3, SF6, NF3, WF6, B2F4, Si2F6, or a combination thereof.

[0082] Aspect 22. The method according to any one of aspects 15 to 21, wherein the fluoride comprises BF3 (boron trifluoride).

[0083] Aspect 23. The method according to aspect 22, wherein the BF3 (boron trifluoride) is natural BF3 (boron trifluoride).

[0084] Aspect 24. The method according to aspect 22, wherein the BF3 (boron trifluoride) is enriched BF3 (boron trifluoride).

[0085] Aspect 25. The method according to any one of aspects 15 to 24, wherein the gas mixture consists essentially of BF3 (boron trifluoride) and hydrogen (H2).

[0086] Aspect 26. The method according to any one of aspects 15 to 25, wherein a gas line connects an ion implanter arc chamber to a gas source.

[0087] Aspect 27. The method according to any one of aspects 15 to 26, wherein hydrogen constitutes 10% to 40% of the gas mixture.

[0088] Aspect 28. The method according to any one of aspects 15 to 27, wherein hydrogen constitutes 15% to 35% of the gas mixture.

[0089] Aspect 29. The method according to any one of aspects 15 to 28, wherein the gallium target comprises at least one of gallium fluoride, gallium chloride, gallium bromide, gallium iodide, gallium nitride, gallium oxide, gallium arsenide, gallium phosphide, trimethylgallium Ga(CH3)3, gallium nitrate Ga(NO3)3, gallium hydroxide Ga(OH)3, gallium antimonide GaSb, gallium sulfide, gallium selenide, gallane, trihydride gallium CH3, digallane Ga2H6, gallium telluride GaTe, indium gallium phosphide, gallium arsenic phosphorus, indium gallium arsenide, aluminum gallium arsenide, and / or gallium.

[0090] It should be understood that changes may be made in detail, particularly with regard to the constituent materials used and the shape, size, and arrangement of the parts, without departing from the scope of the present disclosure. The present specification and the described embodiments are examples, and the true scope and spirit of the present disclosure are indicated by the following claims.

Claims

1. A gas source comprising one or more gas supply containers, wherein the one or more gas supply containers are configured to supply a gas mixture containing hydrogen and fluoride, the gas source in which hydrogen constitutes 5% to 60% of the gas mixture, an ion implanter arc chamber connected to the gas source, and a gallium target contained in the ion implanter arc chamber An ion implantation tool source and a gas delivery system comprising.

2. The gallium target contains gallium nitride (GaN) or gallium oxide (Ga ２ O ３ ), the ion implantation tool source and gas delivery system according to claim 1.

3. The ion implantation tool source and gas delivery system according to claim 1, wherein the gallium target contains at least one of gallium fluoride, gallium chloride, gallium bromide, gallium iodide, gallium nitride, gallium oxide, gallium arsenide, gallium phosphide, trimethylgallium Ga(CH3)3, gallium nitrate Ga(NO3)3, gallium hydroxide Ga(OH)3, gallium antimonide GaSb, gallium sulfide, gallium selenide, gallane, trihydride gallium CH3, digallane Ga2H6, gallium telluride GaTe, indium gallium phosphide, gallium arsenic phosphorus, indium gallium arsenide, aluminum gallium arsenide, and / or gallium.

4. wherein the hydrogen is hydrogen (H ２ ), phosphine (PH ３ ), AsH ３ , SiH ４ , B ２ H ６ , CH ４ , NH ３ , GeH ４ , or a combination thereof, the ion implantation tool source and gas delivery system according to claim 1.

5. The hydrogen contains hydrogen (H ２ ), the ion implantation tool source and gas delivery system according to claim 1.

6. wherein the fluoride is F ２ (fluorine), BF ３ (boron trifluoride), SiF ４ (silicon tetrafluoride), GeF ４ (silicon tetrafluoride), PF ３ (phosphorus trifluoride), PF ５ (phosphorus pentafluoride), XeF ２ , CF ４ , CHF ３ , SF ６ , NF ３ , WF ６ , B ２ F ４ , Si ２ F ６ or a combination thereof, the ion implantation tool source and gas delivery system according to claim 1.

7. wherein the fluoride is BF ３ (boron trifluoride) or enriched BF ３ (boron trifluoride), the ion implantation tool source and gas delivery system according to claim 1.

8. The mixture of the gases consists essentially of BF ３ (boron trifluoride) and hydrogen (H ２ ) and the ion implantation tool source and gas delivery system according to claim 1.

9. The ion implantation tool source and gas delivery system according to claim 1, wherein hydrogen constitutes 10% to 40% of the gas mixture.

10. The ion implantation tool source and gas delivery system according to claim 1, wherein hydrogen constitutes 15% to 35% of the gas mixture.

11. A method of forming gallium ions, comprising: supplying a gas mixture from a gas source to an ion implanter arc chamber, wherein the gas mixture contains hydrogen and fluoride, hydrogen constitutes 5% to 60% of the gas mixture, and the method further comprises contacting the gas mixture with a gallium target contained in the ion implanter arc chamber A method comprising.

12. The method according to claim 11, wherein the gallium target contains gallium nitride (GaN) or gallium oxide (Ga ２ O ３ ).

13. The method according to claim 11, wherein the gallium target contains at least one of gallium fluoride, gallium chloride, gallium bromide, gallium iodide, gallium nitride, gallium oxide, gallium arsenide, gallium phosphide, trimethylgallium Ga(CH3)3, gallium nitrate Ga(NO3)3, gallium hydroxide Ga(OH)3, gallium antimonide GaSb, gallium sulfide, gallium selenide, gallane, gallium trihydride CH3, digallane Ga2H6, gallium telluride GaTe, gallium indium phosphide, gallium arsenic phosphorus, gallium indium arsenide, gallium aluminum arsenide, and / or gallium.

14. wherein the hydrogen is hydrogen (H ２ ), phosphine (PH ３ ), AsH ３ , SiH ４ , B ２ H ６ , CH ４ , NH ３ , GeH ４ , or a combination thereof, the method according to claim 11.

15. wherein the hydrogen contains hydrogen (H ２ ), the method according to claim 11.

16. wherein the fluoride is F ２ (fluorine), BF ３ (boron trifluoride), SiF ４ (silicon tetrafluoride), GeF ４ (silicon tetrafluoride), PF ３ (phosphorus trifluoride), or PF ５ (phosphorus pentafluoride), XeF ２ , CF ４ , CHF ３ , SF ６ , NF ３ , WF ６ , B ２ F ４ , Si ２ F ６ or a combination thereof, the method according to claim 11.

17. said BF ３ (boron trifluoride) is natural BF ３ (boron trifluoride), the method according to claim 16.

18. The mixture of the gases is basically BF ３ (boron trifluoride) and hydrogen (H ２ ) according to the method of claim 11.

19. The method according to claim 11, wherein hydrogen constitutes 10% to 40% of the gas mixture.

20. The method according to claim 11, wherein hydrogen constitutes 15% to 35% of the gas mixture.

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