Atomic layer deposition method

Abstract

The present invention relates to an atomic layer deposition (ALD) method for forming an IGZO channel layer of a transistor device, the method comprising: a deposition cycle step of performing a deposition cycle to deposit an IGZO channel layer on a substrate; and a repetition step of repeatedly performing the deposition cycle step until an IGZO channel layer of a predetermined thickness is formed, the deposition cycle step including an indium oxide subcycle for depositing indium oxide (InO), a gallium oxide subcycle for depositing gallium oxide (GaO), and a zinc oxide subcycle for depositing zinc oxide (ZnO), to deposit the IGZO channel layer.

Description

[Technical Field]

[0001] The present invention relates to an atomic layer deposition method for depositing oxide semiconductor thin films on a substrate. [Background technology]

[0002] Oxide semiconductors are semiconductors made of metal oxides, and can be realized as oxide semiconductor thin films by depositing them on substrates during the manufacturing process of electronic devices such as displays and solar cells.

[0003] For example, an IGZO layer made of indium (In), gallium (Ga), zinc (Zn), and oxygen (O) can be deposited on a substrate during the process of manufacturing a transistor element for electronic devices, and realized as an oxide semiconductor thin film.

[0004] IGZO layers have attracted attention as an important thin film for improving the performance of transistor devices due to their excellent electron mobility and low current leakage. Among the materials that make up the IGZO layer, indium is responsible for electron mobility, gallium for current leakage, zinc for chemical structure stabilization, and oxygen for the role of carrier for electrical conduction. Given this, there is a need to develop an atomic layer deposition (ALD) method that can deposit IGZO layers with improved performance using indium, gallium, zinc, and oxygen. Summary of the Invention [Problem to be solved by the invention]

[0005] The present invention is intended to address the above-mentioned needs and provides an atomic layer deposition method that can deposit IGZO layers with improved performance using indium, gallium, zinc, and oxygen. [Means for solving the problem]

[0006] In order to solve the above-mentioned problems, the present invention can include the following configurations.

[0007] An atomic layer deposition (ALD) method for forming an IGZO channel layer of a transistor device according to the present invention includes a deposition cycle process for performing a deposition cycle to deposit an IGZO channel layer on a substrate, and a repetition process for repeatedly performing the deposition cycle process until an IGZO channel layer of a predetermined thickness is formed. The deposition cycle process can deposit the IGZO channel layer by performing an indium oxide subcycle for depositing indium oxide (InO), a gallium oxide subcycle for depositing gallium oxide (GaO), and a zinc oxide subcycle for depositing zinc oxide (ZnO).

[0008] An atomic layer deposition (ALD) method for forming an IGZO channel layer of a transistor device according to the present invention includes a deposition cycle process for performing a deposition cycle to deposit an IGZO channel layer on a substrate, and a repeating process for repeating the deposition cycle process until an IGZO channel layer of a predetermined thickness is formed. The deposition cycle process includes a gallium indium oxide deposition process for sequentially performing at least one gallium oxide subcycle for depositing gallium oxide (GaO) and one indium oxide subcycle for depositing indium oxide (InO), and a zinc oxide deposition process for performing at least one zinc oxide subcycle for depositing zinc oxide (ZnO).

[0009] An atomic layer deposition (ALD) method for forming an IGZO channel layer of a transistor device according to the present invention includes a deposition cycle process for performing a deposition cycle to deposit an IGZO channel layer on a substrate, and a repeating process for repeatedly performing the deposition cycle process until an IGZO channel layer of a predetermined thickness is formed. The deposition cycle process includes a gallium indium oxide deposition process for sequentially performing at least one indium oxide subcycle for depositing indium oxide (InO) and one gallium oxide subcycle for depositing gallium oxide (GaO), and a zinc oxide deposition process for performing at least one zinc oxide subcycle for depositing zinc oxide (ZnO). [Effects of the Invention]

[0010] According to the present invention, the following effects can be obtained.

[0011] The present invention is embodied in forming an IGZO channel layer by separately depositing indium oxide, gallium oxide, and zinc oxide on a substrate via atomic layer deposition, thereby improving the overall film quality of the IGZO channel layer and contributing to improved performance of transistor devices.

[0012] The present invention is embodied to improve the accuracy and ease of adjusting the composition ratio between indium, gallium, and zinc to accommodate the type, specifications, etc. of a transistor device. Therefore, the present invention can improve adaptability to changes in the type, specifications, etc. of a transistor device, and can improve versatility in being applicable to forming IGZO channel layers of various transistor devices.

[0013] The present invention may be embodied to include a gallium indium oxide deposition process for depositing gallium oxide and indium oxide, thereby improving the process coverage for the IGZO channel layer. [Brief explanation of the drawings]

[0014] [Figure 1] 1 is a schematic diagram illustrating an example of an atomic layer deposition apparatus for performing an atomic layer deposition method according to the present invention. [Figure 2] 1 is a schematic cross-sectional side view of an injection section for injecting gas in an example of an atomic layer deposition apparatus for performing an atomic layer deposition method according to the present invention. [Figure 3] 1 is a schematic cross-sectional side view of an injection section for injecting gas in an example of an atomic layer deposition apparatus for performing an atomic layer deposition method according to the present invention. [Figure 4] FIG. 1 is a schematic cross-sectional side view showing an example of a transistor element. [Figure 5] 1 is a schematic flow chart of an atomic layer deposition method according to the present invention. [Figure 6] 1 is a schematic flow chart of an atomic layer deposition method according to the present invention. [Figure 7] 1 is a schematic flow chart of an atomic layer deposition method according to the present invention. [Figure 8] 1 is a schematic flow chart of an atomic layer deposition method according to the present invention. [Figure 9] 1 is a schematic flow chart of an atomic layer deposition method according to the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0015] The atomic layer deposition method according to the present invention will be described in detail below with reference to the accompanying drawings. When describing embodiments of the present invention, when a structure is described as being formed "on" or "under" another structure, such a description should be interpreted as including not only when the structures are in contact with each other, but also when a third structure is interposed between the structures.

[0016] 1 to 4, the atomic layer deposition method according to the present invention forms an oxide semiconductor thin film on a substrate (S) through atomic layer deposition (ALD). The substrate (S) may be a silicon substrate, a glass substrate, a metal substrate, or the like. The atomic layer deposition method according to the present invention can form an IGZO layer on the substrate (S) using indium (In), gallium (Ga), zinc (Zn), and oxygen (O). Such an IGZO layer can be implemented as a channel layer in a transistor element of an electronic device such as a display device or a solar cell.

[0017] The atomic layer deposition method according to the present invention can be performed by an atomic layer deposition apparatus 1. Before describing an embodiment of the atomic layer deposition method according to the present invention, an example of the atomic layer deposition apparatus 1 will be described in detail below.

[0018] Referring to FIGS. 1 to 3, the atomic layer deposition apparatus 1 may include a chamber 2, a susceptor 3, and an injection unit 4.

[0019] The chamber 2 provides a processing space 100. In the processing space 100, a process of forming an IGZO channel layer of a transistor on the substrate (S) through atomic layer deposition can be performed. The processing space 100 can be disposed inside the chamber 2. An exhaust port (not shown) for exhausting gas from the processing space 100 can be connected to the chamber 2. The susceptor 3 and the spray unit 4 can be disposed inside the chamber 2.

[0020] The susceptor 3 supports a substrate (S). The susceptor 3 can support one substrate (S) or multiple substrates (S). When multiple substrates (S) are supported on the susceptor 3, a process of forming the IGZO channel layer on each of the substrates (S) through atomic layer deposition can be performed on the multiple substrates (S) at the same time. The susceptor 3 can be coupled to the chamber 2. The susceptor 3 can be disposed inside the chamber 2.

[0021] The injection unit 4 injects gas toward the susceptor 3. The injection unit 4 may be connected to a gas storage unit 40. In this case, the injection unit 4 may inject gas supplied from the gas storage unit 40 toward the susceptor 3. The injection unit 4 may be disposed inside the chamber 2. The injection unit 4 may be disposed facing the susceptor 3. The injection unit 4 may be disposed above the susceptor 3. The processing space 100 may be disposed between the injection unit 4 and the susceptor 3. The injection unit 4 may be coupled to a lid (not shown). The lid may be coupled to the chamber 2 to cover the upper part of the chamber 2.

[0022] The injection unit 4 may include a first gas passage 4a and a second gas passage 4b.

[0023] The first gas flow path 4a is for injecting a first gas. One side of the first gas flow path 4a may be connected to the gas storage unit 40 via a pipe, a hose, or the like. The other side of the first gas flow path 4a may be connected to the processing space 100. Thus, the first gas supplied from the gas storage unit 40 may flow along the first gas flow path 4a and then be injected into the processing space 100 through the first gas flow path 4a. The first gas flow path 4a functions as a flow path for the first gas to flow and also as an injection port for injecting the first gas into the processing space 100.

[0024] The second gas passage 4b is for injecting a second gas. The second gas and the first gas may be different gases. For example, if the first gas is a source gas, the second gas may be a reactant gas. One side of the second gas passage 4b may be connected to the gas storage unit 40 via a pipe, a hose, or the like. The other side of the second gas passage 4b may be connected to the processing space 100. Thus, the second gas supplied from the gas storage unit 40 may flow along the second gas passage 4b and then be injected into the processing space 100 through the second gas passage 4b. The second gas passage 4b may function as a passage for the second gas to flow and as an injection port for injecting the second gas into the processing space 100.

[0025] The second gas passage 4b and the first gas passage 4a may be arranged to be spatially separated from each other. Thus, the second gas supplied from the gas storage unit 40 to the second gas passage 4b can be sprayed into the processing space 100 without passing through the first gas passage 4a. The first gas supplied from the gas storage unit 40 to the first gas passage 4a can be sprayed into the processing space 100 without passing through the second gas passage 4b. The second gas passage 4b and the first gas passage 4a can spray gases toward different portions of the processing space 100.

[0026] As shown in FIG. 2, the ejection unit 4 may include a first plate 41 and a second plate 42 .

[0027] The first plate 41 is disposed above the second plate 42. The first plate 41 and the second plate 42 may be spaced apart from each other. The first plate 41 may have a plurality of first gas holes 411 formed therein. The first gas holes 411 may function as passages for the first gas to flow. The first gas holes 411 may belong to the first gas flow path 4a. The first plate 41 may have a plurality of second gas holes 412 formed therein. The second gas holes 412 may function as passages for the second gas to flow. The second gas holes 412 may belong to the second gas flow path 4b. The first plate 41 may have a plurality of protruding members 413 attached thereto. The protruding members 413 may protrude from a lower surface of the first plate 41 toward the second plate 42. Each of the first gas holes 411 may be formed to penetrate the first plate 41 and the protruding members 413.

[0028] A plurality of openings 421 may be formed in the second plate 42. The openings 421 may be formed through the second plate 42. The openings 421 may be disposed at positions corresponding to the protruding members 413, respectively. Therefore, as shown in FIG. 2, the protruding members 413 may be formed to a length that allows them to be inserted into the respective openings 421. Although not shown, the protruding members 413 may also be formed to a length that allows them to be disposed above the respective openings 421. The protruding members 413 may also be formed to a length that allows them to protrude downward from the second plate 42. The second gas holes 412 may be disposed to inject gas toward the upper surface of the second plate 42.

[0029] The injection unit 4 may generate plasma using the second plate 42 and the first plate 41. In this case, a plasma power source such as RF power may be applied to the first plate 41, and the second plate 42 may be grounded. Alternatively, the first plate 41 may be grounded, and the plasma power source may be applied to the second plate 42.

[0030] As shown in FIG. 3, the second plate 42 may have a plurality of first openings 422 and a plurality of second openings 423 formed therein.

[0031] The first openings 422 may be formed through the second plate 42. The first openings 422 may be connected to the first gas holes 411, respectively. In this case, the protruding members 413 may be disposed to contact the upper surface of the second plate 42. The first gas may be injected into the processing space 100 through the first gas holes 411 and the first openings 422. The first gas holes 411 and the first openings 422 may belong to the first gas passage 4a.

[0032] The second opening 423 may be formed through the second plate 42. The second opening 423 may be connected to a buffer space 43 disposed between the first plate 41 and the second plate 42. The second gas may be injected into the processing space 100 through the second gas hole 412, the buffer space 43, and the second opening 423. The second gas hole 412, the buffer space 43, and the second opening 423 may belong to the second gas passage 4b.

[0033] The atomic layer deposition method according to the present invention can be carried out using such an atomic layer deposition apparatus 1 or the like.

[0034] 1 to 5, the atomic layer deposition method according to the present invention can form the IGZO channel layer 230 in a transistor device 200 having an insulating layer 210, a gate electrode 220, an IGZO channel layer 230, a source electrode 240, and a drain electrode 250, as shown in FIG. 4. The insulating layer 210 can be disposed between the gate electrode 220 and the IGZO channel layer 230. The gate electrode 220 can be formed on the substrate (S). The IGZO channel layer 230 can be formed on the insulating layer 210. The source electrode 240 and the drain electrode 250 can be formed on the IGZO channel layer 230.

[0035] The atomic layer deposition method according to the present invention may include a deposition cycle step (S100) and a repeat step (S200).

[0036] The deposition cycle step (S100) is a step of performing a deposition cycle for depositing the IGZO channel layer 230 on the substrate (S). The deposition cycle step (S100) performs the deposition cycle using indium, gallium, zinc, and oxygen, thereby depositing the IGZO channel layer 230 on the substrate (S).

[0037] The repeating step (S200) is a step of repeatedly performing the deposition cycle step (S100). The repeating step (S200) can be performed repeatedly until the IGZO channel layer 230 having a predetermined thickness is formed. Here, the predetermined thickness varies depending on the type and specifications of the transistor element 200, and can be set in advance by an operator.

[0038] Here, the deposition cycle process (S100) may deposit the IGZO channel layer 230 by performing an indium oxide subcycle (ISC) for depositing indium oxide (InO), a gallium oxide subcycle (GSC) for depositing gallium oxide (GaO), and a zinc oxide subcycle (ZSC) for depositing zinc oxide (ZnO). Thus, the atomic layer deposition method according to the present invention is implemented to form the IGZO channel layer 230 by separately depositing the indium oxide, the gallium oxide, and the zinc oxide on the substrate (S), thereby improving the overall film quality of the IGZO channel layer 230. Therefore, the atomic layer deposition method according to the present invention may improve the performance of the IGZO channel layer 230 by improving the film quality, thereby contributing to improved performance of the transistor device 200. Furthermore, the atomic layer deposition method according to the present invention can improve the accuracy and ease of adjusting the composition ratio between indium, gallium, and zinc to accommodate the type and specifications of the transistor device 200 by depositing the indium oxide, the gallium oxide, and the zinc oxide separately on the substrate (S). Therefore, the atomic layer deposition method according to the present invention can improve its adaptability to changes in the type and specifications of the transistor device 200 and can be applied to form the IGZO channel layer 230 of various transistor devices 200 for various purposes.

[0039] The indium oxide subcycle (ISC) may deposit the indium oxide through atomic layer deposition by sequentially injecting an indium-containing source gas and an oxygen-containing reactive gas. The indium oxide subcycle (ISC) may also deposit the indium oxide through atomic layer deposition by sequentially injecting an indium-containing source gas and an oxygen-containing reactive gas multiple times. As such, the atomic layer deposition method according to the present invention may improve the film quality of the indium oxide deposited on the substrate (S) through the indium oxide subcycle (ISC), thereby improving the film quality of the IGZO channel layer 230. The indium-containing source gas may be injected toward the substrate (S) through the first gas passage 4a. The oxygen-containing reactive gas may be injected toward the substrate (S) through the second gas passage 4b.

[0040] The gallium oxide subcycle (GSC) may deposit the gallium oxide through atomic layer deposition by sequentially injecting a gallium-containing source gas and an oxygen-containing reactive gas. The gallium oxide subcycle (GSC) may also deposit the gallium oxide through atomic layer deposition by sequentially injecting a gallium-containing source gas and an oxygen-containing reactive gas multiple times. As such, the atomic layer deposition method according to the present invention may improve the film quality of the IGZO channel layer 230 by improving the film quality of the gallium oxide deposited on the substrate (S) through the gallium oxide subcycle (GSC). The gallium-containing source gas may be injected toward the substrate (S) through the first gas passage 4a. The oxygen-containing reactive gas may be injected toward the substrate (S) through the second gas passage 4b.

[0041] The zinc oxide subcycle (ZSC) can deposit the zinc oxide through atomic layer deposition by sequentially injecting a zinc-containing source gas and an oxygen-containing reactive gas. The zinc oxide subcycle (ZSC) can also deposit the zinc oxide through atomic layer deposition by sequentially injecting a zinc-containing source gas and an oxygen-containing reactive gas multiple times. As such, the atomic layer deposition method according to the present invention can improve the film quality of the zinc oxide deposited on the substrate (S) through the zinc oxide subcycle (ZSC), thereby improving the film quality of the IGZO channel layer 230. The zinc-containing source gas can be injected toward the substrate (S) through the first gas passage 4a. The oxygen-containing reactive gas can be injected toward the substrate (S) through the second gas passage 4b.

[0042] Referring to FIGS. 1 to 6, the deposition cycle process (S100) may include a zinc indium oxide deposition process (S110).

[0043] The zinc indium oxide deposition process (S110) sequentially performs the zinc oxide subcycle (ZSC) and the indium oxide subcycle (ISC). The zinc indium oxide deposition process (S110) can be formed on the substrate (S) by sequentially depositing the zinc oxide and the indium oxide on the substrate (S). The zinc indium oxide deposition process (S110) can also sequentially perform the zinc oxide subcycle (ZSC) and the indium oxide subcycle (ISC) multiple times. In the zinc indium oxide deposition process (S110), a zinc-containing source gas and an indium-containing source gas can be injected toward the substrate (S) through the first gas passage 4a, respectively, and an oxygen-containing reactive gas can be injected toward the substrate (S) through the second gas passage 4b.

[0044] Referring to FIGS. 1 to 6, the deposition cycle process (S100) may include a gallium indium oxide deposition process (S120).

[0045] The gallium indium oxide deposition process (S120) sequentially performs the gallium oxide subcycle (GSC) and the indium oxide subcycle (ISC). The gallium indium oxide deposition process (S120) sequentially deposits the gallium oxide and the indium oxide on the substrate (S), thereby forming gallium indium oxide on the substrate (S). The gallium indium oxide deposition process (S120) may sequentially perform the gallium oxide subcycle (GSC) and the indium oxide subcycle (ISC) multiple times. In the gallium indium oxide deposition process (S120), a gallium-containing source gas and an indium-containing source gas are respectively injected toward the substrate (S) through the first gas passage 4a, and an oxygen-containing reactive gas is injected toward the substrate (S) through the second gas passage 4b. As described above, the atomic layer deposition method according to the present invention can improve step coverage of the IGZO channel layer 230 through the gallium indium oxide deposition process (S120) of depositing gallium oxide and then depositing indium oxide.

[0046] The gallium indium oxide deposition process (S120) may be performed by sequentially depositing the indium oxide subcycle (ISC) and the gallium oxide subcycle (GSC). The gallium indium oxide deposition process (S120) may sequentially deposit the indium oxide and the gallium oxide on the substrate (S), thereby forming a gallium indium oxide layer on the substrate (S). The gallium indium oxide deposition process (S120) may be performed by sequentially depositing the indium oxide subcycle (ISC) and the gallium oxide subcycle (GSC) multiple times. By depositing gallium oxide after indium oxide in the gallium indium oxide deposition process (S120), the atomic layer deposition method according to the present invention may improve step coverage of the IGZO channel layer 230.

[0047] Referring to FIGS. 1 to 6, the deposition cycle process (S100) may include a gallium zinc oxide deposition process (S130).

[0048] The gallium zinc oxide deposition process (S130) sequentially performs the gallium oxide subcycle (GSC) and the zinc oxide subcycle (ZSC). The gallium zinc oxide deposition process (S130) sequentially deposits the gallium oxide and zinc oxide on the substrate (S), thereby forming the gallium zinc oxide on the substrate (S). The gallium zinc oxide deposition process (S130) may sequentially perform the gallium oxide subcycle (GSC) and the zinc oxide subcycle (ZSC) multiple times. In the gallium zinc oxide deposition process (S130), a gallium-containing source gas and a zinc-containing source gas are respectively injected toward the substrate (S) through the first gas passage 4a, and an oxygen-containing reactive gas is injected toward the substrate (S) through the second gas passage 4b.

[0049] 1 to 6, the deposition cycle process (S100) may include the zinc indium oxide deposition process (S110), the gallium indium oxide deposition process (S120), and the gallium zinc oxide deposition process (S130). The deposition cycle process (S100) may be implemented to deposit an IGZO channel layer 230 having a substantially equal composition ratio of zinc, indium, and gallium. Meanwhile, the repeating process (S200) may be performed by sequentially repeating the zinc indium oxide deposition process (S110), the gallium indium oxide deposition process (S120), and the gallium zinc oxide deposition process (S130). In this manner, the atomic layer deposition method according to the present invention may form the IGZO channel layer 230 to a predetermined thickness on the substrate (S).

[0050] The deposition cycle process (S100) may include the zinc indium oxide deposition process (S110) and the gallium indium oxide deposition process (S120). In this case, the deposition cycle process (S100) does not include the gallium zinc oxide deposition process (S130). This deposition cycle process (S100) may be implemented to be suitable for depositing an IGZO channel layer 230 having a higher indium content relative to zinc and gallium. Meanwhile, the repeating process (S200) may be performed by sequentially repeating the zinc indium oxide deposition process (S110) and the gallium indium oxide deposition process (S120).

[0051] The deposition cycle process (S100) may include the gallium indium oxide deposition process (S120) and the gallium zinc oxide deposition process (S130). In this case, the deposition cycle process (S100) does not include the zinc indium oxide deposition process (S110). This deposition cycle process (S100) may be implemented to be suitable for depositing an IGZO channel layer 230 having a higher gallium content relative to indium and zinc. Meanwhile, the repeating process (S200) may be performed by sequentially repeating the gallium indium oxide deposition process (S120) and the gallium zinc oxide deposition process (S130).

[0052] The deposition cycle process (S100) may include the gallium zinc oxide deposition process (S130) and the zinc indium oxide deposition process (S110). In this case, the deposition cycle process (S100) does not include the gallium indium oxide deposition process (S120). This deposition cycle process (S100) may be implemented to be suitable for depositing an IGZO channel layer 230 having a higher zinc content relative to indium and gallium. Meanwhile, the repeating process (S200) may be performed by sequentially repeating the gallium zinc oxide deposition process (S130) and the zinc indium oxide deposition process (S110).

[0053] 1 to 7, the deposition cycle process (S100) may include a gallium oxide deposition process (S140) in addition to the zinc indium oxide deposition process (S110). In this case, the deposition cycle process (S100) may not include the gallium indium oxide deposition process (S120) and the gallium zinc oxide deposition process (S130).

[0054] The gallium oxide deposition process (S140) can be performed by performing the gallium oxide subcycle (GSC). The gallium oxide can be deposited on the substrate (S) through the gallium oxide deposition process (S140). The gallium oxide deposition process (S140) can also be performed by performing the gallium oxide subcycle (GSC) multiple times. The deposition cycle process (S100) can be implemented to be suitable for depositing an IGZO channel layer 230 having a composition ratio of zinc, indium, and gallium that is approximately equal to each other. Meanwhile, the repeating process (S200) can be performed by sequentially repeating the zinc indium oxide deposition process (S110) and the gallium oxide deposition process (S140).

[0055] 1 to 8, the deposition cycle process (S100) may include a zinc oxide deposition process (S150) in addition to the gallium indium oxide deposition process (S120). In this case, the deposition cycle process (S100) may not include the zinc indium oxide deposition process (S110) and the gallium zinc oxide deposition process (S130).

[0056] The zinc oxide deposition process (S150) can be performed by performing the zinc oxide subcycle (ZSC). The zinc oxide can be deposited on the substrate (S) through the zinc oxide deposition process (S150). The zinc oxide deposition process (S150) can also be performed by performing the zinc oxide subcycle (ZSC) multiple times. The deposition cycle process (S100) can be implemented to be suitable for depositing an IGZO channel layer 230 having a composition ratio of zinc, indium, and gallium that is approximately equal to each other. Meanwhile, the repeating process (S200) can be performed by sequentially repeating the gallium indium oxide deposition process (S120) and the zinc oxide deposition process (S150).

[0057] Meanwhile, when the deposition cycle process (S100) is implemented to include the gallium indium oxide deposition process (S120), the atomic layer deposition method according to the present invention can improve step coverage for the IGZO channel layer 230. The gallium indium oxide deposition process (S120) can be performed by depositing gallium oxide and then depositing indium oxide. The gallium indium oxide deposition process (S120) can also be performed by depositing indium oxide and then depositing gallium oxide.

[0058] 1 to 9, the deposition cycle process (S100) may include an indium oxide deposition process (S160) in addition to the gallium zinc oxide deposition process (S130). In this case, the deposition cycle process (S100) may not include the zinc indium oxide deposition process (S110) and the gallium indium oxide deposition process (S120).

[0059] The indium oxide deposition process (S160) can be performed by performing the indium oxide sub-cycle (ISC). The indium oxide can be deposited on the substrate (S) through the indium oxide deposition process (S160). The indium oxide deposition process (S160) can also be performed by performing the indium oxide sub-cycle (ISC) multiple times. The deposition cycle process (S100) can be implemented to be suitable for depositing an IGZO channel layer 230 having a composition ratio of zinc, indium, and gallium that is approximately equal to each other. Meanwhile, the repetition process (S200) can be performed by sequentially repeating the gallium zinc oxide deposition process (S130) and the indium oxide deposition process (S160).

[0060] The present invention described above is not limited to the above-described embodiments and accompanying drawings, and it will be apparent to those skilled in the art to which the present invention pertains that various substitutions, modifications, and changes can be made without departing from the technical spirit of the present invention.

Claims

1. 1. An atomic layer deposition (ALD) method for forming an IGZO channel layer of a transistor device, comprising: performing a deposition cycle to deposit an IGZO channel layer on the substrate; and a repeating step of repeating the deposition cycle step until an IGZO channel layer having a predetermined thickness is formed; the deposition cycle step includes an indium oxide subcycle for depositing indium oxide (InO), a gallium oxide subcycle for depositing gallium oxide (GaO), and a zinc oxide subcycle for depositing zinc oxide (ZnO), to deposit the IGZO channel layer.

2. The indium oxide subcycle sequentially injects a source gas containing indium (In) and a reaction gas containing oxygen (O) at least once to deposit indium oxide through atomic layer deposition; The gallium oxide subcycle includes sequentially injecting a source gas containing gallium (Ga) and a reactive gas containing oxygen (O) at least once to deposit gallium oxide through atomic layer deposition; 10. The atomic layer deposition method of claim 1, wherein the zinc oxide subcycle comprises sequentially injecting a source gas containing zinc (Zn) and a reactant gas containing oxygen (O) at least once to deposit zinc oxide through atomic layer deposition.

3. The deposition cycle step comprises: a zinc indium oxide deposition step in which the zinc oxide subcycle and the indium oxide subcycle are sequentially performed at least once; a gallium indium oxide deposition process in which the gallium oxide subcycle and the indium oxide subcycle are sequentially performed at least once; and 2. The atomic layer deposition method of claim 1, further comprising a gallium zinc oxide deposition step of sequentially performing the gallium oxide subcycle and the zinc oxide subcycle at least once.

4. 4. The atomic layer deposition method according to claim 3, wherein the repeating step comprises sequentially repeating the zinc indium oxide deposition step, the gallium indium oxide deposition step, and the gallium zinc oxide deposition step.

5. The deposition cycle step comprises: a zinc indium oxide deposition process in which the zinc oxide subcycle and the indium oxide subcycle are sequentially performed at least once; and 2. The atomic layer deposition method of claim 1, further comprising a gallium indium oxide deposition step in which the gallium oxide subcycle and the indium oxide subcycle are sequentially performed at least once.

6. The deposition cycle step comprises: a gallium indium oxide deposition process in which the gallium oxide subcycle and the indium oxide subcycle are sequentially performed at least once; and 2. The atomic layer deposition method of claim 1, further comprising a gallium zinc oxide deposition step of sequentially performing the gallium oxide subcycle and the zinc oxide subcycle at least once.

7. The deposition cycle step comprises: a gallium zinc oxide deposition process in which the gallium oxide subcycle and the zinc oxide subcycle are sequentially performed at least once; and 2. The atomic layer deposition method of claim 1, further comprising a zinc indium oxide deposition step in which the zinc oxide subcycle and the indium oxide subcycle are sequentially performed at least once.

8. The deposition cycle step comprises: a zinc indium oxide deposition process in which the zinc oxide subcycle and the indium oxide subcycle are sequentially performed at least once; and 2. The atomic layer deposition method of claim 1, further comprising a gallium oxide deposition step of performing the gallium oxide subcycle at least once.

9. The deposition cycle step comprises: a gallium zinc oxide deposition process in which the gallium oxide subcycle and the zinc oxide subcycle are sequentially performed at least once; and 2. The atomic layer deposition method of claim 1, further comprising an indium oxide deposition step of performing the indium oxide subcycle at least once.

10. 1. An atomic layer deposition (ALD) method for forming an IGZO channel layer of a transistor device, comprising: performing a deposition cycle to deposit an IGZO channel layer on the substrate; and a repeating step of repeating the deposition cycle step until an IGZO channel layer having a predetermined thickness is formed; The deposition cycle step comprises: a gallium indium oxide deposition process in which a gallium oxide subcycle for depositing gallium oxide (GaO) and an indium oxide subcycle for depositing indium oxide (InO) are sequentially performed at least once; An atomic layer deposition method comprising a zinc oxide deposition step of performing at least one zinc oxide subcycle to deposit zinc oxide (ZnO).

11. 1. An atomic layer deposition (ALD) method for forming an IGZO channel layer of a transistor device, comprising: performing a deposition cycle to deposit an IGZO channel layer on the substrate; and a repeating step of repeating the deposition cycle step until an IGZO channel layer having a predetermined thickness is formed; The deposition cycle step comprises: a gallium indium oxide deposition process in which an indium oxide subcycle for depositing indium oxide (InO) and a gallium oxide subcycle for depositing gallium oxide (GaO) are sequentially performed at least once; and An atomic layer deposition method comprising a zinc oxide deposition step of performing at least one zinc oxide subcycle to deposit zinc oxide (ZnO).

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