Heater block and substrate heating device including the same

Abstract

The present invention relates to a heater block capable of controlling heating temperature with high precision and a substrate device equipped with the same, wherein the heater block comprises a first laser module having a plurality of laser cells, a second laser module having a plurality of laser cells and arranged near the first laser module, and first and second power supply units that supply power independently to the first laser module and the second laser module, respectively, and at least one of the first laser module and the second laser module is divided into a plurality of control areas each consisting of one or more of the laser cells that share an input terminal to which power is input, and the plurality of control areas may be controlled independently of each other.

Description

[Technical Field]

[0001] The present invention relates to a heater block and a substrate heating apparatus including the heater block, and more particularly to a heater block capable of controlling heating temperature with high precision and a substrate heating apparatus including the heater block. [Background technology]

[0002] Semiconductor devices are typically fabricated by repeatedly performing unit processes for processing a substrate, such as ion implantation, thin film deposition, and heat treatment. These unit processes require the supply of thermal energy to heat the substrate to a predetermined process temperature. In particular, the use of optical energy to heat the substrate to the predetermined process temperature has the advantage of completing the heating process in a short time and minimizing the side effect of impurities.

[0003] In a typical substrate heating apparatus, a substrate is placed in a chamber and heat-treated via a heater block equipped with multiple halogen lamps. The temperature of the substrate is measured non-contact with a temperature measuring device such as a pyrometer. The pyrometer collects radiant energy emitted from the substrate and measures the substrate temperature non-contact based on the blackbody radiation temperature relationship. The temperature measured by the temperature measuring device is fed back to the heater block via a heating control unit, thereby controlling the temperature of the heater block.

[0004] In the case of silicon wafers, which have a translucent state at temperatures below 600°C and have the property of transmitting light in low temperature regions due to their material properties, when used as a substrate, some of the light from the halogen lamp will be transmitted through the substrate at temperatures below 600°C. In this case, a pyrometer with a measurement wavelength band of 0.9 to 1 μm will measure the part of the halogen lamp light with a radiation wavelength of 0.4 to 6 μm that has transmitted through the substrate, making it impossible to accurately measure the temperature of the substrate alone, resulting in an error in the temperature measurement.

[0005] Furthermore, since halogen lamps cannot be divided into multiple control areas, it is not possible to perform more precise control for each control area. As a result, there is a strong demand for heater blocks that can be controlled for each control area that is even smaller in area than halogen lamps. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Republic of Korea Patent Registration No. 10-0974013 Summary of the Invention [Problem to be solved by the invention]

[0007] The present invention provides a heater block and a substrate heating apparatus including the same, which are capable of precisely controlling the heating temperature for each of a plurality of subdivided control areas, thereby improving the temperature uniformity of the substrate. [Means for solving the problem]

[0008] A heater block according to one embodiment of the present invention comprises a first laser module having a plurality of laser cells, a second laser module having a plurality of laser cells and arranged near the first laser module, and first and second power supply units that supply power independently to the first laser module and the second laser module, respectively, wherein at least one of the first laser module and the second laser module is divided into a plurality of control areas each consisting of one or more of the laser cells that share an input terminal to which power is input, and the plurality of control areas may be controlled independently of each other.

[0009] The first laser module and the second laser module may have different divided shapes of the control area.

[0010] The second laser module may be configured in plurality and may be arranged around the first laser module with the first laser module at the center.

[0011] The first laser module may be divided into a central control area and a peripheral control area, and the second laser module may be bisected into a first control area and a second control area.

[0012] The first control area and the second control area may be disposed at different distances from the first laser module.

[0013] The first control regions and the second control regions of the plurality of second laser modules may be grouped according to their distance from the first laser module.

[0014] The first power supply unit may supply power independently to the central control area and the peripheral control area, and the second power supply unit may supply power independently to the first group of control areas and the second group of control areas.

[0015] The first laser module and the second laser module may have a polygonal shape.

[0016] The laser cell may include a vertical cavity surface emitting laser.

[0017] The laser module may further include a reflector portion that wraps around the periphery of each of the first laser module and the second laser module and reflects at least a portion of the light emitted from the first laser module and the second laser module in a predetermined direction.

[0018] A substrate heating apparatus according to another embodiment of the present invention may include a substrate support section that supports a substrate, and a heater block according to one embodiment of the present invention that is arranged opposite the substrate support section and that irradiates light onto a first surface of the substrate to heat the substrate.

[0019] The substrate heating device may further include a pyrometer disposed on a second surface of the substrate opposite the first surface, for measuring a temperature of the substrate.

[0020] A plurality of the pyrometers may be arranged to correspond to a plurality of imaginary circles having different radii centered on the first laser module.

[0021] The substrate heating apparatus may further include a heating control unit that controls each of the control regions in accordance with a distance from each of the imaginary circles, based on temperatures measured by the plurality of pyrometers.

[0022] According to yet another embodiment of the present invention, a method for heating a substrate includes the steps of: placing a substrate facing a heater block having a first laser module and a second laser module, each of which is independently powered; irradiating a first surface of the substrate facing the heater block with light using the first laser module and the second laser module; and measuring the temperature of the substrate using a pyrometer disposed on a second surface of the substrate facing the first surface, wherein at least one of the first laser module and the second laser module may be divided into a plurality of control areas that are independently controlled from each other.

[0023] The first laser module may be divided into a central control area and a peripheral control area, the second laser module may be divided into two equal parts, a first control area and a second control area, and the second laser module may be configured in plurality and arranged around the first laser module with the first laser module as the center such that the distances from the first laser module to the first control area and the second control area are different from each other.

[0024] The substrate heating method may further include a step of grouping and controlling the first control areas and the second control areas of the plurality of second laser modules according to a distance from the first laser module.

[0025] In accordance with the grouping of the first control region and the second control region, the plurality of pyrometers may be arranged to correspond to a plurality of virtual circles having different radii centered on the first laser module, and in the process of grouping and controlling, each of the control regions may be controlled by group according to the distance from each of the virtual circles based on the temperatures measured by the plurality of pyrometers. [Effects of the Invention]

[0026] The heater block according to an embodiment of the present invention can supply power to the first laser module and the second laser module independently via the first and second power supplies, respectively, and can control the first laser module and the second laser module independently. This allows the heating temperature to be controlled separately for each position of the first laser module and the second laser module, thereby improving heating uniformity for a heating object such as a substrate. Furthermore, by dividing at least one of the first laser module and the second laser module into multiple control regions and controlling them independently, the control regions can be subdivided, further improving heating uniformity for a heating object.

[0027] Here, by dividing the control areas of the first laser module and the second laser module into different shapes, concentric and radial, the heater block can be divided into smaller areas in the radial direction from the center, thereby enabling precise control of the heating temperature. The first and second control areas of the second laser module, which are arranged around the first laser module, are arranged at different distances from the first laser module, and the first and second control areas of the second laser modules are grouped according to their distances from the first laser module. This allows efficient control of the multiple first control areas and multiple second control areas in groups forming concentric circles around the first laser module. This improves the temperature uniformity of the object being heated.

[0028] In addition, by using a vertical-cavity surface-emitting laser (VCSEL) for the laser cell, it is possible to reduce power consumption compared to conventional halogen lamps due to its high energy efficiency, and since it has good linearity of light and is easy to emit specific wavelengths, it is possible to effectively control the optical characteristics.

[0029] The substrate heating apparatus including the heater block of the present invention can improve substrate temperature uniformity during processing by controlling the heating temperatures of the first laser module and the second laser module using temperatures measured by pyrometers. In particular, by dividing at least one of the first laser module and the second laser module into multiple control regions and subdividing the control regions, substrate temperature uniformity can be further improved. In this case, multiple pyrometers can be arranged to correspond to multiple imaginary circles with different radii centered on the first laser module. The first control regions and second control regions of the multiple second laser modules can be grouped according to their distance from the first laser module, and the multiple first control regions and multiple second control regions can be controlled by groups forming concentric circles centered on the first laser module. This allows for accurate control of the multiple first control regions and multiple second control regions by group according to their distance from each imaginary circle based on the temperatures measured by the multiple pyrometers, thereby improving process characteristics such as excellent substrate temperature uniformity.

[0030] Meanwhile, when a vertical cavity surface emitting laser (VCSEL) is used in the heater block's laser cell, the substrate temperature can be accurately measured and controlled even at low temperatures below 600°C by irradiating it with a laser with a main emission wavelength band different from the measurement wavelength band of the pyrometer. This ensures uniformity in the substrate temperature, prevents damage to the substrate, and ensures reliability in low-temperature processes below 600°C. [Brief explanation of the drawings]

[0031] [Figure 1] FIG. 1 is a schematic cross-sectional view showing a heater block according to an embodiment of the present invention. [Figure 2] FIG. 3 is a cross-sectional view showing division of a first laser module and a second laser module according to an embodiment of the present invention. [Figure 3] FIG. 2 is a cross-sectional view showing the layout of a first laser module and a second laser module according to an embodiment of the present invention. [Figure 4] FIG. 3 is a diagram showing a reflector portion according to an embodiment of the present invention. [Figure 5] FIG. 10 is a schematic cross-sectional view showing a substrate heating apparatus according to another embodiment of the present invention. [Figure 6] FIG. 4 is a cross-sectional view showing the layout of a pyrometer according to another embodiment of the present invention. [Figure 7] FIG. 10 is a flowchart showing a substrate heating method according to still another embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0032]

[0023] Hereinafter, the embodiments of the present invention will be described in more detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, and may be embodied in various different forms. These embodiments are provided merely to complete the disclosure of the present invention and to fully convey the scope of the invention to those skilled in the art. In describing the present invention, the same reference numerals will be used for the same components, and the drawings may be exaggerated in size to accurately illustrate the embodiments of the present invention. In the drawings, the same numerals will refer to the same components.

[0033] FIG. 1 is a schematic cross-sectional view showing a heater block according to one embodiment of the present invention.

[0034] Referring to FIG. 1, a heater block 100 according to an embodiment of the present invention may include a first laser module 110 having a plurality of laser cells 10, a second laser module 120 having a plurality of laser cells 10 and disposed near the first laser module 110, and first and second power supply units 130 and 140 that independently supply power to the first laser module 110 and the second laser module 120, respectively.

[0035] The first laser module 110 may have a plurality of laser cells 10 and may provide optical energy for heating. For example, the first laser module 110 may be disposed (or located) in the center (part) of the heater block 100, and the plurality of laser cells 10 may be arranged two-dimensionally to form an array. Here, the plurality of laser cells 10 may include semiconductor laser diodes and may be formed in the form of a single chip, or may be formed by mounting a plurality of chips.

[0036] The second laser module 120 may have a plurality of laser cells 10, may provide optical energy for heating in the same manner as the first laser module 110, and may be disposed near the first laser module 110. For example, the second laser module 120 may also have a plurality of laser cells 10 arranged two-dimensionally to form an array, or a plurality of laser cells 10 composed of semiconductor laser diodes or the like may be formed on a single chip, or may be formed by mounting a plurality of chips. In this case, the second laser module 120 may have the same laser cells 10 as the first laser module 110, and the number of laser cells 10 and the arrangement (shape) of the plurality of laser cells 10 may be similar to those of the first laser module 110, but the present invention is not limited thereto, and it is sufficient if the second laser module 120 can effectively provide optical energy for heating.

[0037] Here, the second laser module 120 may be arranged near the first laser module 110, or may be arranged near the first laser module 110 arranged in the center of the heater block 100 and located on the periphery (part) of the heater block 100.

[0038] Meanwhile, the shape of each of the first laser module 110 and the second laser module 120 may be various, such as a polygon such as a square or a hexagon, a circle, an ellipse, or an arc.

[0039] The first and second power supply units 130 and 140 may supply power independently to the first laser module 110 and the second laser module 120, respectively, and the first power supply unit 130 may supply power to the first laser module 110, and the second power supply unit 140 may supply power to the second laser module 120. This allows the first laser module 110 and the second laser module 120 to be controlled independently. That is, the first laser module 110 and the second laser module 120 may each have an independent power supply (unit).

[0040] For example, the first laser module 110 is disposed in the center of the heater block 100 and can (mainly) heat the center (portion) of a heating object such as a substrate 50, while the second laser module 120 is disposed on the periphery of the heater block 100 and can (mainly) heat the periphery (portion) of the heating object. In this case, the center of the heating object is surrounded by the periphery heated by the second laser module 120, so there is (almost) no heat loss, but the periphery of the heating object is exposed to a vacuum or air, so there is a risk of heat loss. As a result, when the first laser module 110 and the second laser module 120 are controlled to the same heating temperature to heat the heating object, the temperature of the periphery of the heating object may appear lower than the temperature of the center of the heating object, resulting in temperature unevenness between the center and periphery of the heating object.

[0041] Therefore, the heater block 100 according to the present invention can independently control the first laser module 110 and the second laser module 120 by independently supplying power to the first laser module 110 and the second laser module 120 via the first power supply unit 130 and the second power supply unit 140. As a result, the heating temperatures of the first laser module 110 and the second laser module 120 can be adjusted to independently heat the center and the periphery of the object to be heated, thereby improving the heating uniformity of the object to be heated, such as the substrate 50.

[0042] FIG. 2 is a cross-sectional view showing the division of a first laser module and a second laser module according to one embodiment of the present invention, where (a) of FIG. 2 shows the division of the first laser module, (b) of FIG. 2 shows the division of the second laser module in a first form, and (c) of FIG. 2 shows the division of the second laser module in a second form.

[0043] 2, at least one of the first laser module 110 and the second laser module 120, 110 and / or 120, can be divided into a plurality of control areas 110a and 110b and / or 120a and 120b, each of which is composed of one or more laser cells 10 sharing input terminals 11 and 12 to which power is supplied, and the plurality of control areas 110a and 110b or 120a and 120b can be controlled independently of each other. At least one of the first laser module 110 and the second laser module 120, 110 and / or 120, can be provided with a plurality of (external) input terminals 11 and 12 to which power is supplied externally (i.e., from the first power supply unit and / or the second power supply unit). Here, among the multiple input terminals 11, 12, the laser cells 10 that share the same input terminal 11, 12 may be divided into multiple control areas 110a and 110b and / or 120a and 120b, and the laser cells 10 in one of the control areas 110a or 110b and / or 120a or 120b and the laser cells 10 in the remaining other control area 110b or 110a and / or 120b or 120a may be electrically connected (or linked) to different input terminals 11, 12.

[0044] That is, at least one of the first laser module 110 and the second laser module 120, 110 and / or 120, may be divided into multiple control areas 110a and 110b and / or 120a and 120b, each having different input terminals 11 and 12, and the laser cells 10 in each control area 110a, 110b, 120a, and 120b may share the same input terminals 11 and 12. Thus, each of the multiple control areas 110a and 110b and / or 120a and 120b may be composed of one or more laser cells 10 sharing the respective input terminals 11 or 12, and may be controlled independently of each other depending on whether power is supplied to either input terminal 11 or 12.

[0045] In this case, the first laser module 110 and the second laser module 120 may have the same number of control regions 110a, 110b, 120a, and 120b, or may have different numbers of control regions. Alternatively, only one of the first laser module 110 and the second laser module 120 may be divided, with the divided laser module 110 or 120 having two or more control regions 110a and 110b or 120a and 120b, while the undivided laser module 120 or 110 may have a single control region 120a or 110a as the control region for the entire laser module 120 or 110.

[0046] Here, the input terminals 11, 12 may be composed of a + (electrode) terminal 11 and a - (electrode) terminal 12. For example, one of the control regions 110a or 110b or 120a or 120b may be composed of one or more laser cells 10 that share a first + terminal 11a and a first - terminal 12a, and the other remaining control region 110b or 120a or 120b or 110a may be composed of one or more laser cells 10 that share a second + terminal 11b and a second - terminal 12b.

[0047] Therefore, the heater block 100 according to the present invention divides at least one of the first laser module 110 and the second laser module 120, 110 and / or 120, into a plurality of control areas 110a and 110b and / or 120a and 120b and controls them independently of each other, thereby enabling the control areas 110a, 110b, 120a, 120b to be subdivided, thereby further improving the heating uniformity of the object to be heated.

[0048] In this case, the first laser module 110 and the second laser module 120 may have different division shapes of the control areas 110a, 110b, 120a, 120b, and the division shapes may include not being divided at all. Alternatively, the division shapes may be different such that one of the first laser module 110 and the second laser module 120 is divided and the other is not divided.

[0049] For example, when both the first laser module 110 and the second laser module 120 are divided, the first laser module 110 may be divided concentrically and the second laser module 120 may be divided radially. Here, the concentric division refers to dividing the inner and outer sides of a division target (e.g., the first laser module) concentrically (i.e., at the same center) with the center of the division target (e.g., the first laser module) as the reference point, based on a line parallel to the edge of the division target that forms the same imaginary figure as the shape of the division target. The radial division refers to dividing both sides of a line connected to the edge of the division target (e.g., the second laser module) that passes through the center of the division target (e.g., the second laser module) as the reference point. In this case, if the second laser module 120 is circular, both sides may be divided based on the diameter or radius of the circle. Furthermore, if the second laser module 120 is a polygon with an even number of corners, both sides can be divided based on the line connecting (or joining) the sides (centers) or the line connecting the vertices, and if the second laser module 120 is a polygon with an odd number of corners, both sides can be divided based on the line connecting the vertex and the center of the side.

[0050] The first laser module 110 may be disposed in the center of the heater block 100 and divided concentrically, and the second laser module 120 may be disposed on the periphery of the heater block 100 and divided radially. This allows the heater block 100 to be divided into control regions 110a, 110b, 120a, and 120b according to the distance from the center of the heater block 100, thereby enabling precise control of the heating temperature for each of the control regions 110a, 110b, 120a, and 120b.

[0051] Therefore, the heater block 100 of the present invention can precisely control the heating temperature by dividing the control areas 110a, 110b, 120a, 120b into concentric and radial divisions in the first and second laser modules 110 and 120, respectively.

[0052] FIG. 3 is a cross-sectional view showing the layout of a first laser module and a second laser module according to one embodiment of the present invention, where (a) of FIG. 3 shows a first embodiment in which only the first laser module is separated, and (b) of FIG. 3 shows a second embodiment in which both the first laser module and the second laser module are separated.

[0053] 3, the second laser module 120 may be configured as a plurality of modules and arranged around the first laser module 110 with the first laser module 110 at the center, or may be arranged around the first laser module 110 to enclose the first laser module 110. For example, only one first laser module 110 may be arranged in the center (or central portion) of the heater block 100, or multiple second laser modules 120 may be arranged around the periphery of the heater block 100 to enclose the first laser module 110. In this case, the second laser module 120 may enclose the first laser module 110 in a single layer (shell), or may be arranged in a multiple layer (shell), such as a double shell or triple shell, concentrically arranged around the first laser module 110, as shown in FIG. 3, depending on the size and shape of the object to be heated and / or the heater block 100. As a result, control regions 110a, 110b, 120a, and 120b can be divided radially from the center of the heater block 100. Meanwhile, the second power supply unit 140 can supply power independently to each of the second laser modules 120, or can supply power commonly to the second laser modules 120. In this case, the second power supply unit 140 may be configured with a plurality of power supply units, or one power supply unit may be allocated to supply power to the second laser modules 120.

[0054] Here, the first laser module 110 may be divided into a central control area 110a and a peripheral control area 110b, and the second laser module 120 may be divided into two equal parts, a first control area 120a and a second control area 120b. For example, the first laser module 110 may be divided concentrically into a central control area 110a and a peripheral control area 110b as shown in FIG. 2(a). In this case, the central control area 110a may be disposed inside and located at the center of the heater block 100, and the peripheral control area 110b may be disposed outside the central control area 110a. As a result, the first laser module 110 may also be divided into control areas 110a and 110b in the radial direction from the center of the heater block 100.

[0055] The second laser module 120 may be radially divided into two equal halves, a first control region 120a and a second control region 120b, which may be symmetrical, and may have the same shape, area, and number of laser cells 10. For example, if the second laser module 120 has a hexagonal shape, it may be divided into the first control region 120a and the second control region 120b along a line connecting the vertices, as shown in FIG. 2(b), or may be divided into the first control region 120a and the second control region 120b along a line connecting the sides, as shown in FIG. 2(c). On the other hand, the first control area 120a and the second control area 120b may be divided (or bisected) based on a line connecting the centers of the sides, as shown in (c) of Figure 2, or may be divided based on a line connecting sides that is inclined at a predetermined angle to the line connecting the centers of the sides.

[0056] 3(b), the first control area 120a and the second control area 120b may be arranged at different distances from the first laser module 110. Either the first control area 120a or the second control area 120b (120a or 120b) may be arranged close to the first laser module 110, and the other control area (120a or 120b) may be arranged farther from the first laser module 110.

[0057] For example, a plurality of second laser modules 120 may be arranged around the first laser module 110 such that the first control region 120a is located near the first laser module 110 and facing the first laser module 110, and the second control region 120b is located relatively farther (radially) outward from the first laser module 110. In this case, each second laser module 120 may be bisected (or divided in half) based on a line passing through the center of the second laser module 120 and parallel to a tangent to a (concentric) circle centered on the first laser module 110, according to the (arrangement) position of the second laser module 120, so that the first control region 120a faces the center of the first laser module 110. However, the present invention is not limited to this in any way, and it is sufficient if the second laser module 120 can be divided into a first control area 120a and a second control area 120b so that the second laser module 120 can be positioned so that the first control area 120a faces the first laser module 110.

[0058] Meanwhile, the first power supply unit 130 may include a central power supply unit 130a that supplies power to the central control region 110a and a peripheral power supply unit 130b that supplies power to the peripheral control region 110b, and the second power supply unit 140 may include a first power supply unit 140a that supplies power to the first control region 120a and a second power supply unit 140b that supplies power to the second control region 120b. Here, the central power supply unit 130a may supply power to the central control region 110a, and the peripheral power supply unit 130b may supply power to the peripheral control region 110b. Thus, the central control region 110a and the peripheral control region 110b each have independent power supplies (supplies) and can be controlled independently of each other.

[0059] The first power supply unit 140a can supply power to the first control region 120a, and the second power supply unit 140b can supply power to the second control region 120b. Thus, the first control region 120a and the second control region 120b each have their own independent power supplies (supplies) and can be controlled independently of each other. In this case, the first power supply unit 140a can supply power to each of the first control regions 120a of the plurality of second laser modules 120. For example, the first power supply unit 140a can supply power independently to each of the first control regions 120a, or can group two or more first control regions 120a and supply power commonly to two or more first control regions 120a in each group. The second power supply unit 140b can supply power to each of the second control regions 120b of the plurality of second laser modules 120. For example, the second power supply unit 140b can supply power to each second control area 120b independently, or can group two or more second control areas 120b and supply power commonly to two or more second control areas 120b in each group.

[0060] Here, the first control areas 120a and second control areas 120b of the multiple second laser modules 120 may be grouped according to their distances from the first laser module 110, and each group may be controlled (simultaneously). In this case, the first control areas 120a and second control areas 120b of the multiple second laser modules 120 may be grouped into groups of two or more (or two or more first control areas and two or more second control areas) according to their distances from the first laser module 110, and controlled by groups (of multiple first control areas and multiple second control areas) having different distances from the first laser module 110. For example, multiple first control areas 120a at the same or approximately the same (or similar) distances from the first laser module 110 may be grouped together, and multiple second control areas 120b at the same or approximately the same distances from the first laser module 110 may be grouped together. Here, first control regions 120a and second control regions 120b may be grouped together to form concentric circles centered on the first laser module 110, or concentric circles of the same radius may pass through (or cross) each other. In this case, the first control regions 120a and second control regions 120b forming each group may be (electrically) connected to each other.

[0061] For example, the first control regions 120a of the second laser modules 120 in the same shell may be grouped together, or the second control regions 120b of the second laser modules 120 in the same shell may be grouped together. That is, the first control regions 120a and the second control regions 120b of the second laser modules 120 in the first shell (or multiple shells) may be grouped together, or the first control regions 120a and the second control regions 120b of the second laser modules 120 in the double shells may be grouped together. In this case, depending on the number of multiple shells (or shells) of the second laser modules 120 enclosing the first laser module 110, the first control regions 120a and the second control regions 120b of the second laser modules 120 in (up to) n multiple shells may be grouped together.

[0062] On the other hand, when the second laser module 120 is not divided, two or more second laser modules 120 that are at the same or approximately the same distance from the first laser module 110 may be grouped together, or second laser modules 120 that form concentric circles centered on the first laser module 110 or that pass through the same concentric circles may be grouped together.

[0063] The first power supply unit 130 can supply power to the central control region 110a and the peripheral control region 110b independently, and the second power supply unit 140 can supply power to the first control region 120a group and the second control region 120b group independently. The first power supply unit 130 can supply power to the central control region 110a and the peripheral control region 110b independently, such that the central power supply unit 130a of the first power supply unit 130 supplies power to the central control region 110a, and the peripheral power supply unit 130b of the first power supply unit 130 supplies power to the peripheral control region 110b. This allows the central control region 110a and the peripheral control region 110b to be controlled independently.

[0064] The second power supply unit 140 can supply power independently to the group of first control regions 120a and the group of second control regions 120b, such that the first power supply unit 140a of the second power supply unit 140 supplies power to the group of first control regions 120a, and the second power supply unit 140b of the second power supply unit 140 supplies power to the group of second control regions 120b. This allows the group of first control regions 120a and the group of second control regions 120b to be controlled independently, and the heating temperature can be controlled for each group of first control regions 120a and second control regions 120b that are at different distances from the first laser module 110.

[0065] For example, the plurality of first control regions 120a and the plurality of second control regions 120b may be electrically connected to each other in groups. In this case, the first power supply unit 140a may be configured in plural to supply power to each group of the first control region 120a, and the second power supply unit 140b may be configured in plural to supply power to each group of the second control region 120b. Meanwhile, the first power supply unit 140a may distribute power to each group of the first control region 120a in a single first power supply unit 140a, and the second power supply unit 140b may distribute power to each group of the first control region 120a in a single second power supply unit 140b, or a switching means (not shown) may be provided for each distribution line to control each group separately.

[0066] Therefore, in the heater block 100 according to the present invention, the first control regions 120a and the second control regions 120b of the plurality of second laser modules 120, which are arranged around the first laser module 110 so as to enclose the first laser module 110, are arranged at different distances from the first laser module 110, and the first control regions 120a and the second control regions 120b of the plurality of second laser modules 120 can be grouped according to their distances from the first laser module 110. As a result, the plurality of first control regions 120a and the plurality of second control regions 120b (i.e., each group of the first control regions and each group of the second control regions) can be efficiently (or effectively) controlled to form concentric circles around the first laser module 110 or to be grouped by the same concentric circle, thereby improving the temperature uniformity of the object to be heated through heating.

[0067] Here, the first laser module 110 and the second laser module 120 may have a polygonal shape, or the periphery of each of the first laser module 110 and the second laser module 120 may have a polygonal shape. In this case, the second laser module 120 may be disposed on each side of the first laser module 110, or the side of the first laser module 110 and the side of the second laser module 120 may be disposed parallel to each other.

[0068] The first laser module 110 and the second laser module 120 are arranged in various ways depending on the size and shape of the object to be heated (e.g., a substrate), which requires a large installation area for the first laser module 110 and the second laser module 120 in the heater block 100. Furthermore, if a separation space is formed between the first laser module 110 and the second laser module 120 and / or between multiple second laser modules 120 due to the reflector unit 150 or the like, the separation space will inevitably exhibit a different light emission state and temperature distribution from the area where the first laser module 110 and / or the second laser module 120 are arranged because no light is emitted (i.e., laser irradiation) from the separation space. For this reason, it is necessary to maintain the separation space (or separation distance) between the first laser module 110 and the second laser module 120 and / or between multiple second laser modules 120 constant in two dimensions. For this purpose, the first laser module 110 and the second laser module 120 may have a polygonal shape, and when the first laser module 110 and the second laser module 120 have a polygonal shape, the first laser module 110 and the second laser module 120 are arranged two-dimensionally with their sides parallel to each other, thereby ensuring a uniform separation distance across the entire (light-emitting) surface of the heater block 100 (or across the entire heater block). In contrast, when the first laser module 110 and the second laser module 120 have a circular shape, they are forced to have different separation distances (or separation spaces) depending on the direction when arranged two-dimensionally.

[0069] Furthermore, the first laser module 110 and the second laser module 120 may have the same shape (or form), and only when the first laser module 110 and the second laser module 120, which need to be wider depending on the shape and size of the object to be heated, have the same shape, can a planar heating body (i.e., the heater block) be formed by simply arranging (or assembling) the first laser module 110 and multiple second laser modules 120 on a plane.

[0070] For example, the first laser module 110 and the second laser module 120 may have a hexagonal shape, and one second laser module 120 may be arranged on each side of the first laser module 110 so that one of the sides is parallel to each other. When the object to be heated is a circular substrate 50 such as a wafer, the heater block 100 may have a circular shape following the shape of the substrate 50, and it is preferable from the viewpoint of temperature uniformity of the object to be heated that the first laser module 110 and the plurality of second laser modules 120 are arranged so that the outline of the arrangement (shape) of the first laser module 110 and the plurality of second laser modules 120 also approximates a circle. Here, when the periphery of each of the first laser module 110 and the second laser module 120 is hexagonal, it can be easily expanded to fit the size and shape of the object to be heated while maintaining the overall separation space uniform, and the outer contour of the arrangement (shape) of the first laser module 110 and the plurality of second laser modules 120 can be approximated to a circle. In this case, a heater block 100 corresponding to a 4-inch (in) wafer may be composed of one hexagonal first laser module 110 and six hexagonal second laser modules 120 arranged on each side of the first laser module 110. And, a heater block 100 corresponding to a 12-inch (in) wafer may be composed of one hexagonal first laser module 110 and 60 hexagonal second laser modules 120 arranged around the first laser module 110. Here, the 60 second laser modules 120 may be wrapped around the first laser module 110 in a quadruple shell consisting of a first shell consisting of 6 second laser modules 120, a double shell consisting of 12 second laser modules 120, a triple shell consisting of 18 second laser modules 120, and a quadruple shell consisting of 24 second laser modules 120.

[0071] Meanwhile, a honeycomb structure in which a hexagonal first laser module 110 and a plurality of second laser modules 120 are arranged can surround (or encase) the entire periphery of the first laser module 110, including the vertices, with a minimum (or minimum number) of second laser modules 120 (the same as the number of corners). This allows the number of second laser modules 120 to be minimized while increasing the (average) density of laser cells 10 (per unit area), thereby reducing the production cost (or manufacturing cost) of the heater block 100 and increasing the light-emitting efficiency (or heating efficiency).

[0072] In contrast, polygons such as triangles, quadrilaterals, and pentagons, which have fewer corners than a hexagon, will lose each vertex when multiple second laser modules 120 are arranged with their sides parallel to the first laser module 110 at the center, and therefore require the number of second laser modules 120 calculated by adding the number of vertices to the number of sides (or twice the number of corners) to encompass (or surround) the first laser module 110 up to the vertices. For polygons with more corners than a hexagon, even if the first laser module 110 is entirely surrounded by the same number of second laser modules 120 as the number of corners, the number of second laser modules 120 required to surround the hexagonal first laser module 110 will be even greater than the number of second laser modules 120 required to surround the hexagonal first laser module 110. For example, eight quadrilateral second laser modules 120 are required to encompass the quadrilateral first laser module 110 up to the vertices, and ten pentagonal second laser modules 120 are required to encompass the pentagonal first laser module 110 up to the vertices. In the case of the triangular first laser module 110 and second laser module 120, twice the number of corners is six, which is the same as the number of second laser modules 120 surrounding the hexagonal first laser module 110. However, in order to enclose the vertices of the triangular first laser module 110 with only six second laser modules 120, the arrangement of the second laser modules 120 becomes irregular, and the sides of each second laser module 120 are (almost) not adjacent to each other. In such a case, the density of the laser cells 10 must be increased, and the light-emitting efficiency decreases.

[0073] However, in a honeycomb structure in which a hexagonal first laser module 110 and a plurality of second laser modules 120 are arranged, even with only six second laser modules 120, the arrangement of the second laser modules 120 becomes regular, and the sides of each second laser module 120 can be adjacent to each other. This increases the density of the laser cells 10 and improves the light-emitting efficiency.

[0074] And, the laser cell 10 may comprise a Vertical-Cavity Surface-Emitting Laser (VCSEL).

[0075] The semiconductor laser diodes used in the laser cell 10 can be broadly classified into edge-emitting lasers (EELs) and vertical-cavity surface-emitting lasers (VCSELs) depending on the light emission method. Unlike existing side-emitting lasers such as distributed feedback laser diodes (DFBLDs) and Fabry-Perot laser diodes (FPLDs), VCSELs have a structure in which a laser beam is emitted perpendicular to the heated object, such as the substrate 50. Because the laser beam is emitted perpendicular to the heated object, it has a circularly symmetrical distribution, resulting in superior light uniformity compared to side-emitting lasers. Furthermore, wafer-scale processes and fabrication using an entire silicon wafer (or circular substrate) are possible, allowing for inexpensive laser fabrication. Furthermore, the resonance distance is significantly shortened, resulting in a reduced threshold current and overall output power.

[0076] In particular, to be used as a heating light source in the substrate heating apparatus 200, the laser cells 10 must have the shape of a surface light source with a large area, which requires the laser cells 10 to be fabricated as a two-dimensional array of parallel light sources. In the case of a side-emitting laser, light is emitted through the side of a structure stacked on a substrate, making it difficult to fabricate the laser cells 10 as a two-dimensional array of parallel light sources. In contrast, a vertical-cavity surface-emitting laser (VCSEL) can be fabricated very easily as a two-dimensional array of parallel light sources in a desired shape, since it is only necessary to form a structure stacked on a substrate into the desired structure.

[0077] In addition, the vertical cavity surface emitting laser (VCSEL) has a light source irradiation angle of approximately 20 to 25 degrees relative to the direction perpendicular to the light emitting surface, which is much narrower than the 30 to 40 degrees of an LED (Light Emitting Diode), and therefore has good linearity of light. This allows high-power and high-precision light to be irradiated onto the object to be heated, and can also be fabricated as a two-dimensional array of parallel light sources capable of emitting uniform light.

[0078] For example, a vertical cavity surface emitting laser (VCSEL) may be constructed by stacking a mirror layer, an active layer, and another mirror layer in this order on a substrate to emit a laser beam vertically. For a short wavelength in the 850 nm band, the substrate can be made of gallium arsenide (GaAs), and the mirror layer can be a distributed Bragg reflector (DBR), in which low and high refractive indexes are alternately grown by varying the aluminum (Al) composition of aluminum gallium arsenide (AlGaAs) lattice-matched to GaAs. The active layer can (primarily) be a GaAs multi-quantum well structure to generate light of the desired wavelength.

[0079] The first laser module 110 and the second laser module 120 are preferably arranged parallel to each other so that the distance between the light-emitting surfaces and the substrate 50 is constant in order to uniformly heat the substrate 50, which is the object to be heated. Therefore, the first laser module 110 and the second laser module 120 need to be configured as surface light sources having a size corresponding to the size of the substrate 50. For this purpose, the first laser module 110 and the second laser module 120, in which laser cells 10 each having a vertical cavity surface emitting laser (VCSEL) are arranged in a two-dimensional array, may be arranged such that the first laser module 110 is at the center and the second laser module 120 is arranged around the first laser module 110, or a plurality of second laser modules 120 may be arranged to correspond to the size of the substrate 50.

[0080] Therefore, the heater block 100 according to the present invention uses a vertical cavity surface emitting laser (VCSEL) for the laser cell 10, which has high energy efficiency and can reduce power consumption compared to conventional halogen lamps. In addition, the heater block 100 has good linearity of light and can easily emit specific wavelengths, which allows for effective control of light characteristics.

[0081] Figure 4 shows a reflector unit according to one embodiment of the present invention, where (a) of Figure 4 is a perspective view of the reflector unit, and (b) of Figure 4 is a cross-sectional view of the reflector unit taken along A-A'.

[0082] Referring to FIG. 4, the heater block 100 according to the present invention may further include a reflector unit 150 that surrounds the periphery of each of the first laser module 110 and the second laser module 120 and reflects at least a portion of the light emitted from the first laser module 110 and the second laser module 120 in a predetermined direction.

[0083] The reflector unit 150 can wrap around the periphery of each of the first laser module 110 and the second laser module 120 to reflect at least a portion of the light emitted from the first laser module 110 and the second laser module 120 in a predetermined direction, and can reflect at least a portion of the emitted light toward the object to be heated.

[0084] Although the laser cell 10 has superior light directional properties compared to a light emitting diode (LED), it cannot emit light completely perpendicular to the light emitting surface and has an irradiation angle of 20 to 25 degrees, which may cause some of the light emitted from the laser cell 10 to not be incident on the object to be heated at a high angle. For this reason, the reflector unit 150 is used to reflect the diverging light emitted from the first laser module 110 and the second laser module 120 and direct it toward the object to be heated, thereby maximizing light efficiency.

[0085] For example, the reflector unit 150 may be formed in a plate shape and may have a recess or a through-hole into which the first laser module 110 and the second laser module 120 can be fitted, respectively. In this case, the reflector unit 150 may have a side portion that defines the recess or through-hole and is inclined with respect to the light-emitting surfaces of the first laser module 110 and the second laser module 120, and a front portion that is connected to the side portion and is parallel to the light-emitting surfaces of the first laser module 110 and the second laser module 120. Here, the side surface of the reflector unit 150 may form an inclined reflecting surface 151 that reflects the spreading light emitted from the first laser module 110 and the second laser module 120 toward the object to be heated, and the front surface of the reflector unit 150 may form a front reflecting surface 152 that reflects part of the light emitted from the first laser module 110 and the second laser module 120 that is reflected by the object to be heated and again enters the heater block 100 (side) toward the object to be heated again. In this case, the inclined reflecting surface 151 may be disposed so as to form an inclination angle of 80 to 90° with respect to the light emitting surfaces of the first laser module 110 and the second laser module 120.

[0086] Because the laser cell 10 has an irradiation angle (or radiation angle) of 20 to 25° with respect to the direction perpendicular to the light-emitting surface, unless the inclination angle of the inclined reflecting surface 151 with respect to the light-emitting surface is 80 to 90° with respect to the light-emitting surface, the light cannot be effectively reflected toward the object to be heated. Light with an irradiation angle of 20 to 25° is obliquely incident on the inclined reflecting surface 151 with an inclination angle of 80 to 90° and reflected, so that it can be focused and incident on the object to be heated at a high angle. In contrast, in the case of a light-emitting diode (LED) with an irradiation angle of 30 to 40° with respect to the direction perpendicular to the light-emitting surface, light is incident on the inclined reflecting surface 151 at a high angle and reflected, so that it is obliquely incident on the object to be heated at a lower angle and is reflected again, which may prevent the light energy from efficiently reaching the object to be heated.

[0087] If the inclined reflecting surface 151 forms an inclination angle lower than 80° with respect to the light-emitting surfaces of the first laser module 110 and the second laser module 120, the light emitted from the laser cell 10, which has good light rectilinearity, cannot be irradiated onto the inclined reflecting surface 151 and instead heads directly toward the object to be heated, which may result in a decrease in light uniformity due to the inability to incident on the object at a high angle. On the other hand, if the inclined reflecting surface 151 forms an inclination angle higher than 90° with respect to the light-emitting surfaces of the first laser module 110 and the second laser module 120, the inclined reflecting surface 151 faces the first laser module 110 and / or the second laser module 120, and the reflected light is directed again toward the first laser module 110 and / or the second laser module 120, resulting in a problem of light loss.

[0088] Meanwhile, the inclined reflecting surface 151 and / or the front reflecting surface 152 may be coated with a metal reflecting film to further enhance reflection efficiency. The body of the reflector unit 150 may be made of an aluminum alloy or the like, which has good thermal conductivity and mechanical strength. The inclined reflecting surface 151 and / or the front reflecting surface 152 may be polished to form a mirror surface. However, polishing may result in the presence of microstructures on the surface that cause diffuse reflection. For this reason, the inclined reflecting surface 151 and / or the front reflecting surface 152 may be coated with the metal reflecting film to further enhance reflection efficiency. The metal reflecting film may be made of gold (Au), aluminum (Al), or the like, but is not particularly limited to this material. It is sufficient that the metal reflecting film is made of a metal material that is stable at high temperatures and provides mirror reflection.

[0089] FIG. 5 is a schematic cross-sectional view showing a substrate heating apparatus according to another embodiment of the present invention.

[0090] Referring to FIG. 5, a substrate heating apparatus according to another embodiment of the present invention will be described in more detail, but explanations of matters that overlap with those previously described in relation to the heater block according to one embodiment of the present invention will be omitted.

[0091] A substrate heating apparatus 200 according to another embodiment of the present invention may include a substrate support portion 210 that supports a substrate 50, and a heater block 100 according to one embodiment of the present invention that is arranged opposite the substrate support portion 210 and that irradiates light onto a first surface of the substrate 50 to heat the substrate 50.

[0092] The substrate support 210 may support the substrate 50 and may be configured to support a lower edge of the substrate 50, thereby exposing a portion (or region) of the lower surface of the substrate 50 that does not contact the substrate support 210. For example, the substrate support 210 may be hollow with an open center, thereby allowing the substrate 50 to be placed on the substrate support 210, with the peripheral portion of the lower surface of the substrate 50 contacting the substrate support 210 and the remaining portion exposed to the bottom.

[0093] The heater block 100 may be a heater block 100 according to one embodiment of the present invention, may be arranged to face the substrate support part 210, and may heat the substrate 50 by irradiating light (i.e., a laser) onto a first surface (e.g., the top surface) of the substrate 50.

[0094] Here, the heater block 100 serves to supply thermal energy to the substrate 50, and the first laser module 110 and the second laser module 120 can irradiate light toward a first surface of the substrate 50. At this time, the heater block 100 is disposed above the substrate support part 210 at a distance, so that the optical energy generated by the first laser module 110 and the second laser module 120 can be provided through the first surface of the substrate 50 placed on the substrate support part 210 to heat the substrate 50.

[0095] For example, the first laser module 110 and the second laser module 120 may be provided in each of the mounting grooves to provide optical energy for heating the substrate 50. The first laser module 110 and the second laser module 120 may be spaced apart from each other, and the arrangement and placement of the first laser module 110 and the second laser module 120 may be varied in various ways depending on the shape and size of the substrate 50.

[0096] Meanwhile, the heater block 100 may further include a window (not shown) disposed above the first laser module 110 and the second laser module 120. The window (not shown) may be disposed above the first laser module 110 and the second laser module 120 and positioned between the first laser module 110 and the second laser module 120 and the substrate 50. Thus, the window (not shown) may serve to transmit light emitted from the first laser module 110 and the second laser module 120 so that optical energy generated in the first laser module 110 and the second laser module 120 can be provided to the substrate 50.

[0097] The substrate heating apparatus 200 according to the present invention can heat the substrate 50 for a variety of processes, such as heat-treating the substrate 50 or forming a thin film on the substrate 50. For example, the substrate heating apparatus 200 may be a rapid thermal process (RTP) apparatus that generates high-temperature heat to rapidly heat-treat the substrate 50, and the substrate 50 may be a silicon wafer used in a semiconductor device, or may be any of a variety of workpieces that require heat treatment (e.g., glass used in display devices such as liquid crystal displays (LCDs) and organic light-emitting diode displays (OLEDs)).

[0098] The substrate heating apparatus 200 of the present invention may further include a chamber 240 having an internal space. The chamber 240 may be box-shaped and have an internal space to provide a process space separated from an external space. For example, a substrate support unit 210 may be provided in the internal space of the chamber 240 to support the substrate 50, and one side of the chamber 240 may have an entrance / exit through which the substrate 50 can enter and exit. The substrate 50 may be loaded into the internal space of the chamber 240 through the entrance and processed therein, and after the process is completed, the substrate 50 may be unloaded from the internal space of the chamber 240 to the outside through the entrance. If necessary, a gas supply unit (not shown) for supplying a process gas and / or a plasma generator (not shown) for activating the process gas may be connected to the internal space of the chamber 240.

[0099] FIG. 6 is a cross-sectional view showing the layout of a pyrometer according to another embodiment of the present invention.

[0100] Referring to FIG. 6, the substrate heating apparatus 200 according to the present invention may further include a pyrometer 220 disposed on a second surface of the substrate 50 opposite the first surface, for measuring the temperature of the substrate 50.

[0101] The pyrometer 220 is disposed on a second surface (e.g., a lower surface) of the substrate 50 opposite the first surface (e.g., below the substrate) to measure the temperature of the substrate 50. The pyrometer 220 can measure the temperature by detecting light incident from the substrate 50. For example, the pyrometer 220 can receive radiant light incident from the substrate 50 and measure the radiant energy (or light intensity) of the radiant light. The pyrometer 220 can also be disposed below the substrate 50 placed on the substrate support 210 to obtain the radiant energy and reflectance of the opposing portion and measure the temperature of each position (or portion) of the substrate 50 at the corresponding position of the pyrometer 220. Here, the pyrometer 220 measures the temperature using light emitted from an object using blackbody radiation theory, and since this process is well known, a detailed description thereof will be omitted.

[0102] Typically, pyrometer 220 measures temperature using a wavelength band of 0.9 to 1 μm, and its measurement (temperature) range is approximately 400 to 1,150°C. The transmittance of substrate 50 to light in the wavelength band of 0.9 to 1 μm depends on the temperature of substrate 50. For example, a silicon wafer has a semi-transparent transmittance at temperatures below 600°C, and silicon wafers have the property of transmitting light in low temperature ranges due to their material properties. Due to this property, when the temperature of substrate 50 is low, below 600°C, some of the light from a halogen lamp having a radiation wavelength of 0.4 to 6 μm passes through substrate 50. As a result, in the case of a low-temperature substrate 50, part of the light from the halogen lamp, which has an emission wavelength of 0.4 to 6 μm, passes through the substrate, and the pyrometer 220, which has a measurement wavelength band of 0.9 to 1 μm, measures only part of the transmitted light, making it impossible to accurately measure the temperature of the substrate 50 alone, resulting in a problem of erroneous temperature measurement.

[0103] To solve this problem, in the substrate heating apparatus 200 according to the present invention, a first laser module 110 and a second laser module 120 each having a plurality of laser cells 10 with a main emission wavelength shorter than the measurement wavelength of the pyrometer 220 can be used as light sources, and the laser cells 10 can be vertical cavity surface emitting lasers (VCSELs).

[0104] The semiconductor laser diode (or semiconductor laser) of the laser cell 10 is a device that emits coherent laser light from a junction when a voltage is applied across it, and can have a structure in which an active region is inserted between a PN junction, emitting light at a wavelength determined by the thickness and composition of the active region. Therefore, the semiconductor laser diode can emit light of a predetermined wavelength by changing the thickness and composition of the active region.

[0105] Because silicon wafers have a semi-transparent state of transmittance at temperatures below 600°C, the light from the first laser module 110 and the second laser module 120, like the light from a halogen lamp, can pass through the silicon wafer and reach the pyrometer 220. However, because the main emission wavelengths of the first laser module 110 and the second laser module 120 are shorter than the measurement wavelength of the pyrometer 220, they can be excluded from the amount of light measured by the pyrometer 220. Therefore, the amount of light measured by the pyrometer 220 can only include the amount of light emitted from or reflected by the substrate 50. For example, when first laser module 110 and second laser module 120 having an emission wavelength of 0.85 μm are used as light sources, even if light transmitted through a silicon wafer at 600° C. or less reaches pyrometer 220, the light is outside the measurement wavelength of pyrometer 220, which is 0.9 to 1 μm, and therefore can be excluded from the amount of light measured by pyrometer 220, allowing the temperature of substrate 50 to be measured accurately.

[0106] On the other hand, in the case of light emitting diodes (LEDs), the composition of the active region can be varied to emit light of various wavelengths, but the spectral width of the output light from LEDs is generally relatively wide, ranging from 30 to 120 nm, which is likely to result in a band that overlaps with the 0.9 to 1 μm wavelength measured by the pyrometer 220, making this undesirable. To avoid overlapping with the wavelength band measured by the pyrometer 220, the light emitting diode (LED) needs to emit a shorter wavelength, such as visible or ultraviolet light, but such short wavelength light is undesirable because it is less effective at delivering thermal energy than 850 nm infrared light.

[0107] However, in the case of semiconductor laser diodes (LDs), single-mode laser diodes (LDs) generally have an output light spectral width that is much narrower than 1 nm, and multi-mode laser diodes (LDs) also have output light with a narrow spectral width of about 3 to 10 nm. Therefore, even when using infrared light (e.g., infrared light with a wavelength of 850 nm), it is possible to obtain an output light wavelength band that does not overlap with the measurement wavelength of 0.9 to 1 μm of the pyrometer 220.

[0108] Here, a plurality of pyrometers 220 may be provided and arranged to correspond to a plurality of imaginary circles 20 having different radii centered on the first laser module 110. A plurality of pyrometers 220 may be provided and arranged to correspond to a plurality of imaginary circles 20 having different radii centered on the first laser module 110 (or concentric with the center of the first laser module). This makes it possible to measure the temperature of each portion (or position) of the substrate 50 corresponding to each region divided according to the distance from the center of the heater block 100 (or the center of the first laser module). That is, the plurality of pyrometers 220 face each region divided according to the distance from the center of the heater block 100 and measure the temperature of each portion (or position) of the substrate 50 that is (primarily) heated by each region. Thus, the heating temperature of each region (the control region of the substrate 50) can be controlled according to the temperature of each portion of the substrate 50 measured by the plurality of pyrometers 220 so that the temperature of each portion of the substrate 50 during processing is uniform.

[0109] In this case, the substrate 50 may be circular, and the substrate heating apparatus 200 of the present invention may further include a rotation drive unit (not shown) for rotating the substrate 50.

[0110] A rotation drive (not shown) can rotate the substrate 50 to (further) uniformize the temperature of the substrate 50, can rotate the substrate support 210 to rotate the substrate 50 together with the substrate support 210, or can rotate only the substrate 50 on the substrate support 210.

[0111] In the present invention, since the substrate 50 is circular, the first laser module 110 is divided into a central control area 110a and a peripheral control area 110b, and the first control areas 120a and the second control areas 120b are grouped together to form concentric circles centered on the first laser module 110, or the first control areas 120a and the second control areas 120b are grouped together to be passed through (or cross) by concentric circles (with the same radius). Alternatively, the plurality of pyrometers 220 may be arranged so as to correspond to a plurality of imaginary circles 20 having different radii centered on the first laser module 110. Here, one pyrometer 220 may be arranged so as to correspond to each of the plurality of imaginary circles 20, and by rotating the substrate 50 with a rotation drive unit (not shown), the temperature of a wide (ring-shaped) portion of the substrate 50 extending along the imaginary circle 20 can be measured with just one pyrometer 220. That is, as the substrate 50 rotates, a wide portion of the substrate 50 extending along the imaginary circle 20 can pass through (any) the pyrometer 220 (at the position where the pyrometer 220 is located), and the temperature of a wide portion of the substrate 50 extending along the imaginary circle 20 can be measured with a single pyrometer 220.

[0112] Here, one imaginary circle 20 may be set for each shell (or layer) of the first laser module 110 and / or the second laser module 120, with one pyrometer 220 disposed to correspond to each imaginary circle 20, or one may be set for each of the central control area 110a and peripheral control area 110b of the first laser module 110 and / or each of the group of first control areas 120a and group of second control areas 120b of the second laser modules 120, with one pyrometer 220 disposed to correspond to each imaginary circle 20. However, the setting of the multiple imaginary circles 20 and the arrangement of the multiple pyrometers 220 are not limited thereto and may be set and arranged in various ways, as long as the temperature of each portion of the substrate 50 is measured and the heating temperature is controlled for each region (or group) (of the control region) to make the temperature of each portion of the substrate 50 uniform during processing.

[0113] For example, the pyrometers 220 may include a first pyrometer 220a arranged to correspond to the imaginary first circle 20a, a second pyrometer 220b arranged to correspond to the imaginary second circle 20b, a third pyrometer 220c arranged to correspond to the imaginary third circle 20c, and a fourth pyrometer 220d arranged to correspond to the imaginary fourth circle 20d. The first pyrometer 220a may be arranged to correspond to the imaginary first circle 20a, or may be arranged between (on the boundary between) the central control area 110a and the peripheral control area 110b of the first laser module 110. The second pyrometer 220b may be arranged to correspond to the imaginary second circle 20b, or may be arranged between (on a concentric circle between) the group of first control areas 120a and the group of second control areas 120b of the second laser module 120 of the first shell.

[0114] The third pyrometer 220c may be arranged to correspond to the imaginary third circle 20c, and may be arranged between (on a concentric circle) the group of first control regions 120a and the group of second control regions 120b of the double-shell second laser module 120. The fourth pyrometer 220d may be arranged to correspond to the imaginary fourth circle 20d, and may be arranged between (on a concentric circle) the group of first control regions 120a and the group of second control regions 120b of the triple-shell second laser module 120.

[0115] The substrate heating apparatus 200 according to the present invention may further include a heating control unit 230 that controls each of the control areas 110a, 110b, 120a, 120b according to the distance from each of the imaginary circles 20 based on the temperatures measured by the plurality of pyrometers 220.

[0116] The heating control unit 230 can control each of the control areas 110a, 110b, 120a, and 120b according to the distance from each imaginary circle 20 based on the temperatures measured by the pyrometers 220, and can control the power supplied to each of the control areas 110a, 110b, 120a, and 120b using the measured temperatures. Here, the pyrometers 220 can measure the amount of light (light quantity) incident from the substrate 50 to calculate the temperature, and the heating control unit 230 can control the power input to each of the control areas 110a, 110b, 120a, and 120b using the calculated temperature.

[0117] For example, the heating control unit 230 may include a temperature setting unit 231 that sets a target temperature of the substrate 50 and a power determination unit 232 that determines a supply power value by comparing the target temperature set in the temperature setting unit 231 with the temperature measured by the pyrometer 220. The temperature setting unit 231 can set the target temperature of the substrate 50, and can set the temperature of the substrate 50 to be achieved by heating with the heater block 100.

[0118] The power determination unit 232 can determine a supply power value by comparing the target temperature set in the temperature setting unit 231 with the temperature measured by the pyrometer 220, and can supply the determined power to the first power supply unit 130 and / or the second power supply unit 140. Through this, the determined power can be supplied to the region (the control region of the heater block) corresponding to (or facing) the portion of the substrate 50 measured by the pyrometer 220, thereby controlling (or adjusting) the heating temperature of the region and compensating (or correcting) the temperature (difference) of the portion of the substrate 50 measured by the pyrometer 220.

[0119] The heating control unit 230 can simultaneously control the entire first laser module 110 and / or the second laser module 120 according to the measured temperature, but can also independently adjust the operation and supply power of each of a plurality of groups (e.g., the central control area and the peripheral control area, and the group of the first control area and the group of the second control area) according to the temperature of each part of the substrate 50 corresponding to the position where each of the plurality of pyrometers 220 is arranged.

[0120] Meanwhile, the heating control unit 230 may control the heating temperatures of two or more groups based on the temperature measured by one pyrometer 220. For example, the heating temperatures of the central control area 110a and the peripheral control area 110b may be controlled based on the temperature measured by a first pyrometer 220a disposed between the central control area 110a and the peripheral control area 110b of the first laser module 110. Also, the heating temperatures of the first control area 120a and the second control area 120b of the second laser module 120 in the first shell may be controlled based on the temperature measured by a second pyrometer 220b disposed between the first control area 120a and the second control area 120b of the second laser module 120 in the first shell. The heating temperatures of the first control region 120a group and the second control region 120b group of the double-shell second laser module 120 can be controlled based on the temperature measured by a third pyrometer 220c disposed between the first control region 120a group and the second control region 120b group of the double-shell second laser module 120. Furthermore, the heating temperatures of the first control region 120a group and the second control region 120b group of the triple-shell second laser module 120 can be controlled based on the temperature measured by a fourth pyrometer 220d disposed between the first control region 120a group and the second control region 120b group of the triple-shell second laser module 120.

[0121] Here, the arrangement area of ​​the first laser module 110 and the second laser module 120 in the heater block 100 may be larger than the area of ​​the substrate 50 to compensate for heat loss from the outer periphery of the substrate 50, and since the pyrometer 220 can only measure within the area of ​​the substrate 50 and controls only the heating temperature of the area opposite (or corresponding to) the part of the substrate 50 measured by the pyrometer 220, the heating temperature of the control areas 110a, 110b, 120a, 120b arranged outside the area of ​​the substrate 50 cannot be controlled. Therefore, when the fourth pyrometer 220d is the outermost pyrometer 220 measuring the temperature of the substrate 50 within the area of ​​the substrate 50, the temperature measured by the fourth pyrometer 220d can be used to control not only the heating temperature of the group of the first control area 120a and the group of the second control area 120b of the triple-shell second laser module 120, but also the heating temperature of the group of the first control area 120a and the group of the second control area 120b of the n-shell second laser module 120 outside thereof, such as the quadruple-shell.

[0122] In this case, depending on the distance from each virtual circle 20, the control of the heating temperature (or the controlled heating temperature) of the central control area 110a and the peripheral control area 110b and / or the control of the heating temperature (or the controlled heating temperature) of the group of the first control area 120a and the group of the second control area 120b may differ.

[0123] Furthermore, the temperature of the substrate 50 can be measured by the pyrometer 220 in a temperature range even lower than 600°C.

[0124] Recently, new materials such as nickel silicide (NiSi) are required to reduce leakage current and resistance of shallow junctions in the latest semiconductor devices such as Nano-CMOS and FinFET. A low-temperature process below 600°C is essential for depositing thin films such as nickel silicide.

[0125] Generally, when a halogen lamp or semiconductor light-emitting diode (LED) is used as a heating light source, the pyrometer 220 cannot accurately measure temperatures in a low-temperature range below 600°C. This requires a complicated process, such as attaching another means capable of measuring temperatures in a low-temperature range below 600°C, to the substrate heating apparatus 200, which can lead to a problem of making the structure of the substrate heating apparatus 200 complicated.

[0126] In contrast, the substrate heating apparatus 200 of the present invention uses the laser cell 10, which has a main emission wavelength shorter than the measurement wavelength of the pyrometer 220, as a heating light source, and can therefore perform highly precise temperature measurements even at temperatures lower than 600°C, and can handle processes over a wide temperature range from low-temperature processes lower than 600°C to high-temperature processes without any additional temperature measurement means.

[0127] Therefore, the substrate heating apparatus 200 including the heater block 100 according to the present invention can improve the temperature uniformity of the substrate 50 during processing by controlling the heating temperatures of the first laser module 110 and the second laser module 120 for each group (or each control area) using the temperature measured by the pyrometer 220. In particular, by dividing at least one of the first laser module 110 and the second laser module 120 into a plurality of control areas 110a, 110b, 120a, and 120b, the control areas 110a, 110b, 120a, and 120b are subdivided, thereby further improving the temperature uniformity of the substrate 50. In this case, a plurality of pyrometers 220 may be configured and arranged to correspond to a plurality of imaginary circles 20 having different radii centered on the first laser module 110. The first control regions 120a and second control regions 120b of the plurality of second laser modules 120 may be grouped according to the distance from the first laser module 110, and the plurality of first control regions 120a and the plurality of second control regions 120b may be controlled for each group forming concentric circles centered on the first laser module 110. In this way, the plurality of first control regions 120a and the plurality of second control regions 120b may be precisely controlled for each group according to the distance from each imaginary circle 20 based on the temperatures measured by the plurality of pyrometers 220, thereby improving process characteristics such as excellent temperature uniformity of the substrate 50.

[0128] Meanwhile, when a vertical cavity surface emitting laser (VCSEL) is used for the laser cell 10 of the heater block 100, the temperature of the substrate 50 can be accurately measured and the temperature of the substrate 50 can be precisely controlled even in a low temperature range of 600°C or less by irradiating a laser having a main emission wavelength band different from the measurement wavelength band of the pyrometer 220. This ensures the uniformity of the temperature of the substrate 50, prevents damage to the substrate 50, and ensures the reliability of low-temperature processes at temperatures below 600°C.

[0129] FIG. 7 is a flowchart showing a substrate heating method according to still another embodiment of the present invention.

[0130] Referring to FIG. 7, a substrate heating method according to another embodiment of the present invention will be described in more detail, but the description of matters that overlap with those previously described in relation to the heater block according to one embodiment of the present invention and the substrate heating apparatus according to another embodiment of the present invention will be omitted.

[0131] A substrate heating method according to yet another embodiment of the present invention may include the steps of: arranging a substrate so as to face a heater block having a first laser module and a second laser module, each of which is independently supplied with power (S100); irradiating a first surface of the substrate facing the heater block with light using the first laser module and the second laser module (S200); and measuring the temperature of the substrate using a pyrometer disposed on a second surface of the substrate facing the first surface (S300).

[0132] First, a substrate is disposed facing a heater block including a first laser module and a second laser module, each of which is independently powered (S100). The substrate may be disposed facing the heater block including the first laser module and the second laser module, each of which is independently powered, and the substrate may be supported on a substrate support disposed facing the heater block. For example, the substrate may be disposed in the process space of the chamber by being supported on the substrate support provided in the interior space of the chamber, or the substrate may be transported into the interior space of the chamber through an entrance / exit provided on one side of the chamber.

[0133] Next, the first surface of the substrate facing the heater block is irradiated with light using the first laser module and the second laser module (S200). The first surface of the substrate facing the heater block can be irradiated with light (optical energy) emitted from each laser cell of the first laser module and the second laser module, and the optical energy can be converted into thermal energy to increase the temperature of the substrate. Here, the laser cell may include a vertical-cavity surface-emitting laser (VCSEL). The optical energy of the light irradiated from the first laser module and the second laser module may be determined according to the magnitude of power supplied to the first laser module and the second laser module by first and second power supplies, respectively.

[0134] Next, the temperature of the substrate is measured using a pyrometer disposed on a second surface of the substrate opposite the first surface (S300). The temperature of the substrate can be measured using the pyrometer disposed on the second surface of the substrate, and the pyrometer can measure the temperature using radiant energy of light incident from the substrate. Here, the main emission wavelength of the laser cell may be shorter than the measurement wavelength of the pyrometer.

[0135] At least one of the first laser module and the second laser module may be divided into a plurality of control areas that are controlled independently of each other. At least one of the first laser module and the second laser module may have a plurality of input terminals and may be divided into a plurality of control areas each having the input terminal. Here, the plurality of control areas may each be composed of one or more laser cells that share the respective input terminal and may be controlled independently of each other depending on which input terminal is supplied with power.

[0136] The first laser module may be divided into a central control area and a peripheral control area, and the second laser module may be divided into two equal parts, a first control area and a second control area. The first laser module may be concentrically divided into a central control area and a peripheral control area, and the central control area may be disposed inside and located at the center of the heater block, and the peripheral control area may be disposed outside the central control area. Thus, the control areas can be subdivided radially from the center of the heater block even within the first laser module.

[0137] The second laser module may be bisected by a radial division into a symmetrical first control region and a symmetrical second control region, and the first control region and the second control region may be symmetrical and may have the same shape, area, and number of laser cells. For example, if the second laser module is hexagonal, the first control region and the second control region may be bisected based on a line connecting the vertices, or may be bisected based on a line connecting the sides.

[0138] In this case, the second laser module may be configured as a plurality of modules and may be arranged around the first laser module with the first laser module at the center so that the distances from the first laser module to the first control region and the second control region are different from each other. The second laser module may be configured as a plurality of modules and may be arranged around the first laser module with the first laser module at the center, or may be arranged around the first laser module to enclose the first laser module. For example, only one first laser module may be arranged at the center (or center) of the heater block, and multiple second laser modules may be arranged around the periphery of the heater block to enclose the first laser module. In this case, the second laser module may enclose the first laser module in a single shell, or may be arranged in a multiple-enclosing shape, such as a double shell or triple shell, concentrically (circularly) centered around the first laser module, depending on the size and shape of the substrate and / or the heater block. Thus, the control area can be divided radially from the center of the heater block.

[0139] The first control region and the second control region may be disposed at different distances from the first laser module, and one of the first control region and the second control region may be disposed near the first laser module, while the other control region may be disposed farther from the first laser module. For example, the second laser modules may be disposed around the first laser module such that the first control region is located near the first laser module toward the first laser module, and the second control region is located relatively farther outward (in the radial direction) from the first laser module.

[0140] The substrate heating method according to the present invention may further include a step (S400) of grouping and controlling the first control areas and the second control areas of the plurality of second laser modules according to their distances from the first laser module.

[0141] The first control regions and the second control regions of the plurality of second laser modules may be grouped and controlled according to their distances from the first laser module (S400). A heating controller may group and control the first control regions and the second control regions of the plurality of second laser modules according to their distances from the first laser module, and control the heating temperatures of the grouped first control regions and the grouped second control regions so that the temperature of each portion of the substrate during processing is uniform. By grouping the first control regions and the second control regions of the plurality of second laser modules according to their distances from the first laser module, the plurality of first control regions (i.e., groups of first control regions) and the plurality of second control regions (i.e., groups of second control regions) may be efficiently (or effectively) controlled in groups that form concentric circles around the first laser module or that pass through the same concentric circle, thereby improving the temperature uniformity of the substrate during heating.

[0142] According to the grouping of the first control region and the second control region, the plurality of pyrometers may be arranged to correspond to a plurality of imaginary circles with different radii and centered on the first laser module. According to the grouping of the first control region and the second control region, the plurality of pyrometers may be arranged to correspond to a plurality of imaginary circles with different radii and centered on the first laser module. For example, the plurality of pyrometers may be configured, and the plurality of pyrometers may be arranged to correspond to the plurality of imaginary circles with different radii and centered on the first laser module (or concentric with the center of the first laser module). Thus, the temperature can be measured at each portion (or each position) of the substrate corresponding to each region (of the control region) divided according to the distance from the center of the heater block (or the center of the first laser module). In this case, the plurality of virtual circles may be set according to the grouping of the first control area and the second control area so that the first control area group and the second control area group can be well controlled to uniformize the temperature of each portion of the substrate during processing, and the plurality of pyrometers may be arranged to correspond to the set plurality of virtual circles.

[0143] In the grouping and controlling step (S400), the control regions can be controlled by group according to their distance from the virtual circle based on the temperatures measured by the pyrometers. The heating control unit can control the control regions by group according to their distance from the virtual circle based on the temperatures measured by the pyrometers, and can control the power supplied to each of the control regions using the measured temperatures. Here, the pyrometers can measure the amount of light (light quantity) incident from the substrate to calculate a temperature, and the heating control unit can control the power input to each of the control regions using the calculated temperature.

[0144] For example, the grouping and controlling process (S400) may include a process of setting a target temperature for the substrate (S410) and a process of comparing the set target temperature with the measured temperature to determine a supply power value (S420).

[0145] A target temperature of the substrate can be set (S410). The target temperature of the substrate can be set through a temperature setting unit, and the temperature of the substrate to be achieved through heating by the heater block can be set.

[0146] Then, a supply power value can be determined by comparing the set target temperature with the measured temperature (S420). In the step of setting the target temperature (S410), the power determination unit can determine a supply power value by comparing the target temperature set in the temperature setting unit with the temperature measured by the pyrometer, and the determined power can be supplied to the first power supply unit and / or the second power supply unit. Thus, the determined power can be supplied to the region (the control region of the heater block) corresponding to (or facing) the portion of the substrate measured by the pyrometer, thereby controlling (or adjusting) the heating temperature of the region and compensating (or correcting) the temperature (difference) of the portion of the substrate measured by the pyrometer.

[0147] Therefore, the substrate heating method according to the present invention measures the temperature of each portion (or each position) of the substrate corresponding to each region (the control region) divided according to the distance from the center of the heater block (or the center of the first laser module) using the plurality of pyrometers, and controls the heating temperature of each region (the control region) according to the temperature of each portion of the substrate measured by the plurality of pyrometers. This makes it possible to precisely adjust the temperature of each portion (in the radial direction) divided according to the distance from the center of the (circular) substrate, thereby making the temperature of each portion of the substrate uniform during processing and improving the temperature uniformity (or temperature degree) of the substrate.

[0148] Meanwhile, the steps of the substrate heating method according to another embodiment of the present invention do not necessarily have to be performed in chronological order, and may be performed in reverse order or simultaneously, as necessary. For example, the step of measuring the temperature of the substrate (S300) may be followed by the step of irradiating the first surface of the substrate with light (S200). Furthermore, multiple steps may be repeated, or only selected steps from the multiple steps may be repeated.

[0149] As described above, in the present invention, the first and second laser modules can be independently controlled by supplying power to the first and second laser modules via the first and second power supplies. This allows the heating temperature to be controlled separately for each position of the first and second laser modules, thereby improving the heating uniformity of the object to be heated, such as a substrate. Furthermore, by dividing at least one of the first and second laser modules into multiple control regions and controlling them independently, the control region can be subdivided, further improving the heating uniformity of the object to be heated. Here, by dividing the control regions of the first and second laser modules into different shapes, either concentrically or radially, the heating temperature can be precisely controlled by subdividing the control regions radially from the center of the heater block. In this case, the first and second control regions of the second laser modules arranged around the first laser module are arranged at different distances from the first laser module. The first and second control regions of the second laser modules are grouped according to their distance from the first laser module, thereby efficiently controlling the first and second control regions in groups concentrically centered around the first laser module. This improves the temperature uniformity of the heated object during heating. Furthermore, the use of a vertical cavity surface emitting laser (VCSEL) for the laser cell reduces power consumption compared to conventional halogen lamps due to its high energy efficiency. Furthermore, the VCSEL's excellent linearity and ability to emit specific wavelengths allow for effective control of optical characteristics. Furthermore, the temperature uniformity of the substrate during processing can be improved by controlling the heating temperature of the first and second laser modules using the temperature measured by the pyrometer. In particular, by dividing at least one of the first laser module and the second laser module into a plurality of control regions and subdividing the control regions, the temperature uniformity of the substrate can be further improved.In this case, multiple pyrometers may be arranged to correspond to multiple imaginary circles with different radii centered on the first laser module. The first and second control regions of the multiple second laser modules may be grouped according to their distance from the first laser module, and the multiple first and second control regions may be controlled in groups concentric with the first laser module. This allows the multiple first and second control regions to be precisely controlled according to their distance from each imaginary circle based on the temperatures measured by the multiple pyrometers, thereby improving process characteristics, such as achieving excellent substrate temperature uniformity. Meanwhile, when a vertical cavity surface emitting laser (VCSEL) is used as the laser cell of the heater block, the substrate temperature can be accurately measured and precisely controlled even at low temperatures below 600°C by irradiating it with a laser having a primary emission wavelength band different from the measurement wavelength band of the pyrometer. This ensures substrate temperature uniformity, prevents substrate damage, and ensures reliability in low-temperature processes below 600°C.

[0150] The meaning of "on" used in the above explanation section covers both cases of direct contact and cases of being positioned opposite the upper or lower surface without direct contact, and it is possible to be positioned opposite the entire upper or lower surface, or to be positioned opposite only partially, and is used to mean being positioned opposite at a distance or being in direct contact with the upper or lower surface.

[0151] Although the preferred embodiments of the present invention have been illustrated and described above, the present invention is not limited to the above-described embodiments, and it should be understood by those skilled in the art that various modifications can be made thereto and that equivalent embodiments can be adopted without departing from the spirit of the present invention as claimed in the claims. Therefore, the technical scope of protection of the present invention should be determined by the following claims.

Claims

1. a first laser module having a plurality of laser cells; a second laser module having a plurality of laser cells and disposed adjacent to the first laser module; first and second power supply units that independently supply power to the first laser module and the second laser module, respectively; Equipped with At least one of the first laser module and the second laser module is divided into a plurality of control areas each consisting of one or more of the laser cells sharing an input terminal for receiving power; A heater block, wherein the plurality of control regions are controlled independently of each other.

2. The heater block according to claim 1 , wherein the first laser module and the second laser module have different divided shapes of the control areas.

3. The heater block according to claim 1 , wherein the second laser module is configured as a plurality of second laser modules arranged around the first laser module with the first laser module as the center.

4. the first laser module is divided into a central control area and a peripheral control area; 4. The heater block of claim 3, wherein the second laser module is bisected into a first control area and a second control area.

5. The heater block according to claim 4 , wherein the first control area and the second control area are disposed at different distances from the first laser module.

6. The heater block of claim 5 , wherein the first control areas and the second control areas of the plurality of second laser modules are grouped according to their distance from the first laser module.

7. the first power supply unit supplies power to the central control area and the peripheral control area independently, The heater block of claim 6 , wherein the second power supply unit supplies power to the first group of control regions and the second group of control regions independently.

8. The heater block of claim 1 , wherein the first laser module and the second laser module have a polygonal shape.

9. The heater block of claim 1 , wherein the laser cell comprises a vertical cavity surface emitting laser.

10. 2. The heater block of claim 1, further comprising a reflector portion that wraps around the periphery of each of the first laser module and the second laser module to reflect at least a portion of the light emitted from the first laser module and the second laser module in a predetermined direction.

11. a substrate support portion that supports a substrate; a heater block according to any one of claims 1 to 10, which is disposed so as to face the substrate support portion and which irradiates a first surface of the substrate with light to heat the substrate; A substrate heating device comprising:

12. The substrate heating apparatus of claim 11 , further comprising a pyrometer disposed on a second surface of the substrate opposite the first surface, for measuring a temperature of the substrate.

13. The substrate heating apparatus according to claim 12 , wherein a plurality of the pyrometers are arranged to correspond to a plurality of imaginary circles having different radii centered on the first laser module.

14. The substrate heating apparatus according to claim 13 , further comprising a heating control unit that controls each of the control regions in accordance with a distance from each of the imaginary circles based on temperatures measured by the plurality of pyrometers.

15. placing the substrate opposite a heater block having a first laser module and a second laser module, each of which is independently powered; irradiating a first surface of the substrate facing the heater block with light using the first laser module and the second laser module; measuring the temperature of the substrate using a pyrometer disposed on a second surface of the substrate opposite the first surface; Including, A method for heating a substrate, wherein at least one of the first laser module and the second laser module is divided into a plurality of control areas that are controlled independently of each other.

16. the first laser module is divided into a central control area and a peripheral control area; the second laser module is divided into two equal parts, a first control area and a second control area; 16. The substrate heating method of claim 15, wherein the second laser module is configured in plurality and is arranged around the first laser module such that distances from the first laser module to the first control area and the second control area are different from each other.

17. 17. The method of claim 16, further comprising the step of grouping and controlling the first control areas and the second control areas of the plurality of second laser modules according to a distance from the first laser module.

18. According to the grouping of the first control region and the second control region, the plurality of pyrometers are arranged to correspond to a plurality of imaginary circles having different radii centered on the first laser module, 18. The substrate heating method according to claim 17, wherein in the grouping and controlling, each of the control regions is controlled by group according to a distance from each of the imaginary circles based on the temperatures measured by the plurality of pyrometers.

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