Microwave generator and atomization device
The integration of a voltage-controlled oscillator and multi-stage power amplifier module on a single substrate addresses the miniaturization challenge of atomization devices by ensuring efficient power output and reducing the device's footprint.
Patent Information
- Application Number
- JP2025513280
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2022-09-02
- Publication Date
- 2025-09-04
AI Technical Summary
Current atomization devices require multiple circuit stages and microstrips for higher power output, leading to a large footprint and hindering miniaturization.
A microwave generator with a voltage-controlled oscillator and multi-stage power amplifier module mounted on the same substrate, forming an integrated circuit chip, to amplify radio frequency signals and ensure sufficient power output while minimizing space.
The integrated circuit design enhances power efficiency, prevents power mismatch, and ensures miniaturization of the atomization device by reducing the space occupied by the amplifier modules.
Smart Images

Figure 2025529253000001_ABST
Abstract
Description
[Technical Field]
[0001] The present invention relates to the technical field of electronic atomization, and more particularly to a microwave generator and atomization device. [Background technology]
[0002] Atomization devices, such as atomized electronic cigarettes, are popular among many users because they are healthier and more cost-effective. As users increasingly demand a better atomization experience and aerosol volume, current atomization devices typically require higher power output, which generates more aerosol and satisfies the user's need for higher power. However, higher power output typically requires the installation of multiple circuit stages, each with a peripheral matching circuit and a microstrip for power transmission, resulting in a large footprint and hindering the miniaturization of the atomization device. Summary of the Invention [Problem to be solved by the invention]
[0003] Embodiments of the present invention provide a microwave generator and an atomization device. [Means for solving the problem]
[0004] In some embodiments, a microwave generator according to the present invention includes a voltage-controlled oscillator for generating a high-frequency radio frequency signal, and a multi-stage power amplifier module connected in series, the multi-stage power amplifier module being connected to the voltage-controlled oscillator, receiving the radio frequency signal, amplifying its power, and outputting the amplified radio frequency signal to a load, and mounted on the same substrate to form an integrated circuit chip.
[0005] In some embodiments, the multi-stage power amplifier module and the voltage controlled oscillator are mounted on the same substrate to form the integrated circuit chip.
[0006] In some embodiments, the multi-stage power amplification module includes a first-stage power amplification module, a second-stage power amplification module, and a third-stage power amplification module, which are sequentially connected in series between the voltage-controlled oscillator and the load and amplify the radio frequency signal output from the voltage-controlled oscillator in stages.
[0007] In some embodiments, the first-stage power amplifier module includes a first chip, resistors R6, R7, R8, R13, R15, R16, R19, capacitors C21, C22, C24, C26, C36, C42, emitter capacitor CE, inductance L2, and inductance L3. A first pin of the first chip is connected to an output pin of the voltage-controlled oscillator via series-connected capacitor C36 and resistor R6. One end of resistor R7 is connected between resistor R6 and the output pin of the voltage-controlled oscillator, and the other end is connected to ground. One end of resistor R8 is connected between resistor R6 and capacitor C36, and the other end is connected to the other end of resistor R7. A second pin of the first chip is connected to one end of inductance L3. The other end of inductance L3 is connected to a first power supply. Capacitor C42 is connected between inductance L3 and the first power supply. Pins 3 and 4 of the first chip are connected to ground. Pin 5 of the first chip is connected to the first power supply via resistor R15. Capacitor C21 has one end connected between the first power supply and resistor R15 and the other end connected to ground. Pin 6 of the first chip is connected to the first power supply via resistor R16. Capacitor C22 has one end connected between the first power supply and resistor R16 and the other end connected to ground. Pin 7 of the first chip is connected to emitter capacitor CE via resistor R19. Capacitor C26 has one end connected between resistor R19 and pin 7 of the first chip and the other end connected to ground. Resistor R13 has one end connected between resistor R19 and pin 7 of the first chip and the other end connected to the other end of capacitor C26. The eighth and ninth pins of the first chip are electrically connected to the second-stage power amplifier module via a DC blocking capacitor C50. One end of an inductor L2 is connected between the eighth pin of the first chip and the DC blocking capacitor C50 and between the ninth pin of the first chip and the DC blocking capacitor C50, and the other end is connected to a second power supply.The capacitor C24 has one end connected between the inductance L2 and the second power supply and the other end connected to ground.
[0008] In some embodiments, the second-stage power amplifier module includes a second chip, capacitors C41, C51, C52, and C53, and an inductor L4. The first pin of the second chip is connected to the first-stage power amplifier module via a DC-blocking capacitor C50. One end of capacitor C52 is connected between DC-blocking capacitor C50 and the first pin of the second chip, and the other end is connected to the second pin of the second chip. The second pin of the second chip is connected to ground. The third pin of the second chip is connected to the third-stage power amplifier module via a DC-blocking capacitor C37. One end of inductor L4 is connected between the third pin of the second chip and DC-blocking capacitor C37, and the other end is connected to a third power supply. One end of capacitor C41 is connected between inductor L4 and the third power supply, and the other end is connected to ground. One end of capacitor C51 is connected between the third pin of the second chip and inductor L4, and the other end is connected to the second pin of the second chip. capacitor C53 has one end connected between the inductance L4 and the DC blocking capacitor C37, and the other end connected to the second pin of the second chip.
[0009] In some embodiments, the load includes a cavity for storing a substrate and an FMA terminal provided in the cavity. The third-stage power amplifier module includes a third chip, variable resistor RT11, resistors R14, R36, capacitors C20, C39, and C54, a power supply VG, and a diode VD. The first and second pins of the third chip are electrically connected and then connected to the second-stage power amplifier module via a DC-blocking capacitor C37. One end of resistor R14 is connected between the first pin of the third chip and the DC-blocking capacitor C37 and between the second pin of the third chip and the DC-blocking capacitor C37, and the other end is connected to the power supply VG. The variable resistor RT11 is disposed between the power supply VG and resistor R14. The variable resistor RT11 has a first end connected to a fourth power supply, a second end connected to ground, and a third end connected between the power supply VG and resistor R14. One end of capacitor C20 is connected between resistor R14 and power supply VG, and the other end is connected to ground. One end of resistor R36 is connected to the third end of variable resistor RT11, and the other end is connected to the second end of variable resistor RT11. The third and fourth pins of the third chip are electrically connected and then connected to the first pin of loop element T1 via DC blocking capacitor C38. The second pin of loop element T1 is connected to the FMA terminal. Diode VD is connected between the third pin of the third chip and DC blocking capacitor C38 and between the fourth pin of the third chip and DC blocking capacitor C38. Capacitor C39 is connected between the third pin of the third chip and diode VD and between the fourth pin of the third chip and diode VD, and the other end is connected to ground. Capacitor C54 is connected between DC blocking capacitor C38 and diode VD, and the other end is connected to ground. The fifth pin of the third chip is connected to ground.
[0010] In some embodiments, the substrate is made of at least one of ceramics and metal.
[0011] In some embodiments, the atomization device of the present invention includes a microcontroller and a microwave generator. The microcontroller is electrically connected to the microwave generator. The microwave generator includes a voltage-controlled oscillator for generating a high-frequency radio frequency signal and a multi-stage power amplifier module connected in series. The multi-stage power amplifier module is connected to the voltage-controlled oscillator, receives the radio frequency signal, amplifies its power, and outputs the amplified radio frequency signal to a load. The multi-stage power amplifier module is mounted on the same substrate to form an integrated circuit chip.
[0012] In some embodiments, the atomization device further includes a forward power detection module that detects the power of the radio frequency signal amplified by the multi-stage power amplification module and outputs a first voltage to the microcontroller, and the microcontroller turns off the voltage-controlled oscillator when the power of the radio frequency signal is greater than or less than a predetermined range.
[0013] In some embodiments, the forward power detection module and the multi-stage power amplifier module are mounted on the same substrate to form the integrated circuit chip.
[0014] In some embodiments, the forward power detection module, the voltage controlled oscillator, and the multi-stage power amplifier module are mounted on the same substrate to form the integrated circuit chip.
[0015] In some embodiments, the forward power detection module includes a fourth chip, resistors R18, R24, R26, R28, R35, R37, capacitors C27, C29, C31, C33, and C61, and a power supply VCC. The first pin of the fourth chip is connected to the power supply VCC. One end of capacitor C31 is connected between the first pin of the fourth chip and the power supply VCC, and the other end is connected to ground. The second pin of the fourth chip is connected to one end of resistor R35. The other end of resistor R35 is connected between the first pin of the fourth chip and capacitor C31. The third pin of the fourth chip is connected to the microcontroller through resistor R37. The fourth pin of the fourth chip is connected to ground. The first end of capacitor C33 is connected between the third pin of the fourth chip and resistor R37, and the other end is connected to the fourth pin of the fourth chip. The fifth pin of the fourth chip is connected to ground. One end of capacitor C29 is connected to the sixth pin of the fourth chip, and the other end is connected to the fifth pin of the fourth chip. The seventh pin of the fourth chip is connected to ground via a series connection of capacitor C27, resistor R26, capacitor C61, a first coupling line, and resistor R18. The first coupling line is coupled to a second coupling line connected between DC blocking capacitor C38 and loop element T1. One end of resistor R28 is connected between resistor R26 and capacitor C27, and the other end is connected to ground. One end of resistor R24 is connected between resistor R26 and capacitor C61, and the other end is connected to ground.
[0016] In some embodiments, the atomization device further includes a reverse power detection module for detecting reflected microwave power at the load and outputting a second voltage to the microcontroller, wherein the microcontroller performs an algorithm on the first voltage and the second voltage to output a resonant frequency and controls the frequency of the radio frequency signal output from the voltage-controlled oscillator according to the resonant frequency.
[0017] In some embodiments, the reverse power detection module and the multi-stage power amplifier module are mounted on the same substrate to form the integrated circuit chip.
[0018] In some embodiments, the reverse power detection module, the voltage controlled oscillator, and the multi-stage power amplifier module are mounted on the same substrate to form the integrated circuit chip.
[0019] In some embodiments, the reverse power detection module includes a fifth chip, resistor R91, resistor R95, capacitor C89, capacitor C91, capacitor C92, capacitor C93, and a power supply VCC. A first pin of the fifth chip is connected to the power supply VCC. One end of capacitor C91 is connected between the first pin of the fifth chip and the power supply VCC, and the other end is connected to ground. A second pin of the fifth chip is connected to one end of resistor R95. The other end of resistor R95 is connected between the first pin of the fifth chip and capacitor C91. A third pin of the fifth chip is connected to the microcontroller. One end of capacitor C93 is connected between the third pin of the fifth chip and the microcontroller, and the other end is connected to a fourth pin of the fifth chip. The fourth pin of the fifth chip is connected to ground. The fifth pin of the fifth chip is connected to ground. A sixth pin of the fifth chip is connected to one end of capacitor C89. The other end of capacitor C89 is connected to the fifth pin of the fifth chip. One end of the resistor R17 is connected to the loop element T1 via the third coupling line, and the other end is connected to ground. The seventh pin of the fifth chip is connected to ground via a series connection of a capacitor C92, a fourth coupling line, and an electrical resistor R91. The fourth coupling line is connected to the first coupling line.
[0020] In some embodiments, the atomizing device further includes a temperature detection module that detects a temperature of the load and outputs a third voltage, and the microcontroller turns off the voltage-controlled oscillator when the temperature of the load exceeds a preset temperature range.
[0021] In some embodiments, the temperature detection module includes a thermistor RT1 and an electrical resistor R99. One end of the electrical resistor R99 is electrically connected to the microcontroller and the other end is connected to a first power supply. One end of the thermistor RT1 is connected between the microcontroller and the electrical resistor R99 and the other end is connected to ground.
[0022] In some embodiments, the microcontroller includes a sixth chip and a capacitor C3. The first pin of the sixth chip is connected to a first power supply. One end of capacitor C3 is connected between the first pin of the sixth chip and the first power supply, and the other end is connected to ground. The second, third, and fourth pins of the sixth chip are all electrically connected to the voltage-controlled oscillator. The fifth pin of the sixth chip is connected to ground. The sixth pin of the sixth chip is electrically connected to a reverse power detection module. The seventh pin of the sixth chip is electrically connected to a forward power detection module. The eighth pin of the sixth chip is electrically connected to a temperature detection module.
[0023] In some embodiments, the voltage-controlled oscillator includes a seventh chip, resistors R1, R5, R9, capacitors C1, C2, C10, C12, C14, C15, C16, C17, C18, inductor L1, and crystal oscillator Y1. The first, second, and third pins of the seventh chip are electrically connected to a first power supply. One end of capacitor C10 is connected between the first power supply and pin 3 of the seventh chip, and the other end is connected to ground. The fourth pin of the seventh chip is connected to one end of capacitor C12. The other end of capacitor C12 is connected between capacitor C10 and pin 3 of the seventh chip. The fifth pin of the seventh chip is connected to the first-stage power amplifier module via a DC-blocking capacitor C13. One end of inductance L1 is connected between capacitors C10 and C12, and the other end is connected between DC blocking capacitor C13 and pin 5 of the seventh chip. Pin 6 of the seventh chip is connected to one end of capacitor C17. The other end of capacitor C17 is connected to ground. Pin 7 of the seventh chip is connected to ground. Pin 8 of the seventh chip is connected to one end of capacitor C16. The other end of capacitor C16 is connected to ground. Pin 9 of the seventh chip is connected to one end of resistor R9 via capacitor C15. The other end of resistor R9 is connected to ground. Resistor R5 has one end connected between pin 9 of the seventh chip and capacitor C15, and the other end connected between pin 8 of the seventh chip and capacitor C16. Capacitor C14 has one end connected between resistor R5 and capacitor C15, and the other end connected to ground. Pins 10, 11, and 12 of the seventh chip are all electrically connected to the microcontroller. Pin 13 of the seventh chip is connected to pin 3 of crystal oscillator Y1 through series-connected capacitors C1 and C2. Pin 4 of crystal oscillator Y1 is connected to the first power supply. Pin 1 of crystal oscillator Y1 is floating. Pin 2 of crystal oscillator Y1 is connected to ground.One end of the electrical resistor R1 is connected between the capacitors C1 and C2 and the other end is connected to ground. One end of the capacitor C18 is connected between the fourth pin of the crystal oscillator Y1 and the first power supply and the other end is connected to ground.
[0024] The microwave generator and atomization device of the present invention are equipped with serially connected multi-stage power amplifier modules to increase the power of the radio frequency signal from the voltage-controlled oscillator, fully meet the power requirements of the atomization device, ensure improved atomization and aerosol volume, and prevent power mismatch from causing no atomization or insufficient atomization, which affects the inhalation experience. Furthermore, the multi-stage power amplifier modules are mounted on the same substrate to form an integrated circuit chip, which reduces the space occupied by the multi-stage power amplifier modules, improves the efficiency of the entire amplification link, and ensures the miniaturization of the microwave generator and atomization device.
[0025] Additional aspects and advantages of embodiments of the invention will be set forth in part in the description that follows, and in part will be obvious from the description, or may be learned by practice of embodiments of the invention. [Brief explanation of the drawings]
[0026] The above and / or additional aspects and advantages of the present invention will become apparent and readily understood from the following description of the embodiments taken in conjunction with the drawings. [Figure 1] FIG. 2 is a module connection block diagram of an atomization device according to some embodiments of the present invention. [Figure 2] 1 is a circuit principle diagram of a first-stage power amplification module in a microwave generating device according to some embodiments of the present invention; [Figure 3] 1 is a circuit principle diagram of a second-stage power amplification module in a microwave generating device according to some embodiments of the present invention; [Figure 4] FIG. 2 is a circuit diagram of a load in an atomization device according to some embodiments of the present invention; [Figure 5]1 is a diagram illustrating a configuration of a load in an atomization device according to some embodiments of the present invention. [Figure 6] 1 is a circuit principle diagram of a third-stage power amplification module in a microwave generating device according to some embodiments of the present invention; [Figure 7] FIG. 10 is a circuit diagram of a forward power detection module in an atomization device according to some embodiments of the present invention; [Figure 8] FIG. 10 is a circuit diagram of a reverse power detection module in an atomization device according to some embodiments of the present invention; [Figure 9] FIG. 2 is a circuit diagram of a microcontroller and a temperature detection module in an atomization device according to some embodiments of the present invention; [Figure 10] FIG. 10 is a circuit diagram of a voltage-controlled oscillator in an atomization device according to some embodiments of the present invention. DETAILED DESCRIPTION OF THE INVENTION
[0027] Hereinafter, embodiments of the present invention will be described in detail. Examples of embodiments are shown in the drawings, and identical or similar elements or elements having identical or similar functions are designated by identical or similar reference numerals. The embodiments described below with reference to the drawings are merely illustrative and are intended to explain the present invention, but do not limit the present invention.
[0028] The following disclosure provides different configurations of embodiments of the present invention in different embodiments or examples. To simplify the disclosure of embodiments of the present invention, the following describes specific example components and installations. Of course, these are for illustrative purposes only and are not intended to limit the present invention.
[0029] Atomization devices, such as atomized electronic cigarettes, are popular among many users because they are healthier and more cost-effective. As users increasingly demand a better atomization experience and aerosol volume, current atomization devices typically require higher power output, thereby generating more aerosol to meet users' needs for a higher power experience. However, higher power output typically requires the installation of multiple circuit stages, each of which requires a peripheral matching circuit and a microstrip for power transmission, resulting in a large footprint and hindering the miniaturization of the atomization device. Referring to FIG. 1 , to address this issue, the present invention provides a microwave generator 10 and an atomization device 100.
[0030] Referring to FIG. 1, an embodiment of the present invention provides a microwave generator 10. The microwave generator 10 includes a voltage-controlled oscillator 11 and a multi-stage power amplifier module 13 connected in series. The voltage-controlled oscillator 11 generates a high-frequency radio frequency signal. The multi-stage power amplifier module 13 is connected to the voltage-controlled oscillator 11, receives the radio frequency signal, amplifies its power, and outputs the amplified radio frequency signal to a load 30. The multi-stage power amplifier module 13 is mounted on the same substrate to form an integrated circuit chip.
[0031] The frequency of the radio frequency signal may be a 2.45 GHz signal. The multi-stage power amplification modules 13 are connected in series and sequentially amplify the power of the received radio frequency signal, so that the power of the radio frequency signal meets the high power requirement for a large amount of aerosol and improves the inhalation comfort of the atomizing device 100. Note that in some embodiments, the frequency of the radio frequency signal may be other frequency values.
[0032] In some embodiments, the number of power amplifier modules may be two, three, four or more, but is not limited thereto. In the present invention, only the case where there are three power amplifier modules will be described as an example, and the three power amplifier modules are connected in series.
[0033] The microwave generator 10 according to the embodiment of the present invention includes a series-connected multi-stage amplifier module 13, which amplifies the power of the radio frequency signal from the voltage-controlled oscillator 11, fully satisfies the power requirements of the nebulization device 100, ensures an increased atomization quality and aerosol volume, and prevents power mismatch from causing no atomization or insufficient atomization, which affects the quality of the inhalation. Furthermore, the multi-stage power amplifier module 13 is mounted on the same substrate to form an integrated circuit chip, thereby reducing the space occupied by the multi-stage power amplifier module 13, improving the efficiency of the entire amplification link, and ensuring the miniaturization of the microwave generator 10 and the nebulization device 100.
[0034] In some embodiments, the multi-stage power amplifier module 13 and the voltage controlled oscillator 11 are mounted on the same substrate to form an integrated circuit chip.
[0035] Specifically, the voltage-controlled oscillator 11 is electrically connected to the multi-stage power amplifier module 13. The high-frequency radio frequency signal generated by the voltage-controlled oscillator 11 is directly transmitted to the multi-stage power amplifier module 13 for power amplification, thereby increasing the gain and improving the overall efficiency of the amplification link, thereby improving the operating efficiency of the microwave generator 10 and the atomization device.
[0036] In addition, the voltage-controlled oscillator 11 and the multi-stage power amplifier module 13 are mounted on the same substrate to form an integrated circuit chip, which reduces the matching circuit and power transmission microstrips around the multi-stage power amplifier module 13, reduces the circuit area, further reduces the space occupied by the microwave generator 10, and ensures the miniaturization of the microwave generator 10 and the atomization device 100.
[0037] In some embodiments, the substrate is made of at least one of ceramics and metal.
[0038] Specifically, a certain amount of heat is generated during operation of the voltage-controlled oscillator 11 and the multi-stage power amplification module 13. When the amount of heat is high, the electrical resistance of the multi-stage power amplification module 13 increases, reducing the output power of the multi-stage power amplification module 13. As a result, the nebulization device 100 is unable to produce a sufficient amount of atomization due to insufficient output power, affecting the inhalation comfort and further preventing complete atomization. The use of a ceramic or metal substrate for the bottom of the integrated circuit chip improves the thermal uniformity and heat dissipation efficiency of the integrated circuit chip, prevents heat accumulation, ensures sufficient output power, and ensures the nebulization device 100 produces a sufficient amount of atomization and provides a comfortable inhalation experience.
[0039] 1 , in some embodiments, the multi-stage power amplification module 13 may include a first-stage power amplification module 131, a second-stage power amplification module 133, and a third-stage power amplification module 135. The first-stage power amplification module 131, the second-stage power amplification module 133, and the third-stage power amplification module 135 are sequentially connected in series between the voltage-controlled oscillator 11 and the load 30, and amplify the radio frequency signal output from the voltage-controlled oscillator 11 in stages.
[0040] In one embodiment, the first-stage power amplification module 131, the second-stage power amplification module 133, and the third-stage power amplification module 135 may have different amplification factors. For example, the first-stage power amplification module 131 has an amplification factor of 20 dB, the second-stage power amplification module 133 has an amplification factor of 17 dB, and the third-stage power amplification module 135 has an amplification factor of 15 dB. The multi-stage power amplification modules 13 have different amplification factors, and the radio frequency signal is sequentially amplified by the multi-stage power amplification modules 13 with different amplification factors before being transmitted to the load 30. This reduces the burden on the multi-stage power amplification module 13 during the radio frequency signal power amplification process, improves the stability of the power amplification, and ensures the accuracy of the power amplification. In another embodiment, the first-stage power amplification module 131, the second-stage power amplification module 133, and the third-stage power amplification module 135 may have the same amplification factor. This simplifies and standardizes device selection, facilitates replacement and maintenance in the event of damage, and reduces costs.
[0041] In some embodiments, the first stage power amplifier module 131, the second stage power amplifier module 133, and the third stage power amplifier module 135 may be connected by coupling, such as, but not limited to, resistor-capacitor coupling, direct coupling, or photoelectric coupling.
[0042] 1 and 2, in some embodiments, the first-stage power amplification module 131 includes a first chip U1, a resistor R6, a resistor R7, a resistor R8, a resistor R13, a resistor R15, a resistor R16, a resistor R19, a capacitor C21, a capacitor C22, a capacitor C24, a capacitor C26, a capacitor C36, a capacitor C42, an emitter capacitor CE, an inductance L2, and an inductance L3.
[0043] Specifically, the first pin of the first chip U1 is connected to the output pin of the voltage-controlled oscillator 11 via a series-connected capacitor C36 and a resistor R36. One end of resistor R7 is connected between resistor R6 and the output pin of the voltage-controlled oscillator 11, and the other end is connected to ground GND. One end of resistor R8 is connected between resistor R6 and capacitor C36, and the other end is connected to the other end of resistor R7. The second pin of the first chip U1 is connected to one end of inductance L3. The other end of inductance L3 is connected to the first power supply V1. Capacitor C42 is connected between inductance L3 and the first power supply V1. The third and fourth pins of the first chip U1 are connected to ground GND. The fifth pin of the first chip U1 is connected to the first power supply V1 via resistor R15. One end of capacitor C21 is connected between the first power supply V1 and resistor R15, and the other end is connected to ground GND. The sixth pin of the first chip U1 is connected to the first power supply V1 via an electrical resistor R16. The capacitor C22 has one end connected to the first power supply V1. Electrical resistance The first chip U1 has a first terminal connected between the first chip U1 and the DC-blocking capacitor C50 and a second terminal connected to the DC-blocking capacitor C50. The first chip U1 has a second terminal connected to the DC-blocking capacitor C50 and a third terminal connected to the DC-blocking capacitor C50. The first chip U1 has a second terminal connected to the DC-blocking capacitor C50 and a fourth ...
[0044] The main role of the first-stage power amplifier module 131 in this embodiment of the present invention is to receive and power-amplify a high-frequency radio frequency signal generated by the voltage-controlled oscillator 11, and to transmit the radio frequency signal amplified in the first stage to the second-stage power amplifier module 133 by coupling it to the second-stage power amplifier module 133 via a DC blocking capacitor C50.
[0045] 1 and 3, in some embodiments, the second-stage power amplification module 133 includes a second chip U2, a capacitor C41, a capacitor C51, a capacitor C52, a capacitor C53, and an inductance L4.
[0046] Specifically, the first pin of the second chip U2 is connected to the first-stage power amplifier module 131 via a DC blocking capacitor C50. Specifically, referring to FIG. 2, the first pin of the second chip U2 is connected to both the eighth and ninth pins of the first chip U1 via the DC blocking capacitor C50. One end of the capacitor C52 is connected between the DC blocking capacitor C50 and the first pin of the second chip U2, and the other end is connected to the second pin of the second chip U2. The second pin of the second chip U2 is connected to ground GND. The third pin of the second chip U2 is connected to the third-stage power amplifier module 135 via a DC blocking capacitor C37. One end of the inductor L4 is connected between the third pin of the second chip U2 and the DC blocking capacitor C37, and the other end is connected to the third power supply V3. One end of the capacitor C41 is connected between the inductor L4 and the third power supply V3, and the other end is connected to ground GND. The capacitor C51 has one end connected between the third pin of the second chip U2 and the inductance L4, and the other end connected to the second pin of the second chip U2. C53 has one end connected between the inductance L4 and the DC blocking capacitor C37, and the other end connected to the second pin of the second chip U2.
[0047] The main role of the second-stage power amplifier module 133 in this embodiment of the present invention is to receive the radio frequency signal power-amplified by the first-stage power amplifier module 131 and power-amplify it in the second stage, and to transmit the radio frequency signal power-amplified in the second stage to the third-stage power amplifier module 135.
[0048] 1, 4 and 5. In some embodiments, the load 30 includes a cavity body 31 for storing a substrate 33, and an FMA terminal J1 provided in the cavity body 31.
[0049] Specifically, at least a portion of the substrate 33 is placed in the cavity body 31, and the FMA terminal J1 is connected to the third-stage power amplifier module 135. This allows the radio frequency signal power-amplified by the multi-stage power amplifier module 13 to be introduced into the cavity body 31, thereby heating the substrate 33 stored in the cavity body 31. Note that in some embodiments, the load 30 Alternatively, a power-amplified radio frequency signal may be introduced into the cavity body 31 by a device such as an antenna or a probe.
[0050] 4 to 6, in some embodiments, the third-stage power amplification module 135 includes a third chip U3, a variable resistor RT11, a resistor R14, a resistor R36, a capacitor C20, a capacitor C39, a capacitor C54, a power supply VG, and a diode VD.
[0051] Specifically, the first and second pins of the third chip U3 are electrically connected and then connected to the third pin of the second-stage power amplifier module 133 via a DC blocking capacitor C37. One end of the resistor R14 is connected between the first pin of the third chip U3 and the DC blocking capacitor C37 and between the second pin of the third chip U3 and the DC blocking capacitor C37, and the other end is connected to a power supply VG. The variable resistor RT11 is connected between the power supply VG and the resistor R14. The first end of the variable resistor RT11 is connected to the fourth power supply V4, the second end is connected to ground GND, and the third end is connected between the power supply VG and the resistor R14. The capacitor C20 has one end connected between the resistor R14 and the power supply VG and the other end connected to ground GND. The resistor R36 has one end connected to the third end of the variable resistor RT11 and the other end connected to the second end of the variable resistor RT11. The third and fourth pins of the third chip U3 are electrically connected and then connected to the first pin of the loop element T1 through DC blocking capacitor C38. The second pin of the loop element T1 is connected to the FMA terminal. Diode VD is connected between pin 3 of the third chip U3 and DC blocking capacitor C38 and between pin 4 of the third chip U3 and DC blocking capacitor C38. Capacitor C39 has one end connected between pin 3 of the third chip U3 and diode VD and between pin 4 of the third chip U3 and diode VD, and the other end connected to ground GND. Capacitor C54 has one end connected between DC blocking capacitor C38 and diode VD and the other end connected to ground GND. Pin 5 of the third chip U3 is connected to ground GND.
[0052] Furthermore, if the substrate 33 is not present in the cavity body 31 of the load 30 or an open circuit occurs, the loop element T1 can prevent the radio frequency signal power-amplified by the multi-stage power amplifier module 13 from returning to the third-stage power amplifier module 135. This ensures normal operation of the third-stage power amplifier module 135 and prevents damage to the third-stage power amplifier module 135.
[0053] The main role of the third-stage power amplification module 135 in this embodiment of the present invention is to receive the radio frequency signal power-amplified by the second-stage power amplification module 133, power-amplify it in the third stage, and transmit the radio frequency signal power-amplified in the third stage to the FMA terminal J1 of the cavity body 31, thereby heating the base material 33 stored in the cavity body 31 to generate an aerosol and ensure the comfortable inhalation of the atomization device 100.
[0054] Referring to Fig. 1, an embodiment of the present invention further provides an atomization device 100. The atomization device 100 includes a microcontroller 20 and a microwave generation device 10 according to any one of the above embodiments. The microcontroller 20 is electrically connected to the microwave generation device 10.
[0055] 7, in some embodiments, the atomizing device 100 may further include a forward power detection module 40. The forward power detection module 40 detects the power of the radio frequency signal amplified by the multi-stage power amplification module 13 and outputs a first voltage to the microcontroller 20. The microcontroller 20 turns off the voltage-controlled oscillator 11 when the power of the radio frequency signal is greater than or less than a preset range.
[0056] In one embodiment, the forward power detection module 40 and the multi-stage power amplification module 13 are mounted on the same substrate to form an integrated circuit chip. This allows the forward power detection module 40 to directly detect the radio frequency signal power-amplified by the multi-stage power amplification module 13, improving the operating efficiency of the microwave generator 10 and the atomization device 100. In addition, by forming the forward power detection module 40 and the multi-stage power amplification module 13 on an integrated circuit chip, the circuit area of the forward power detection module 40 and the multi-stage power amplification module 13 is reduced, ensuring the miniaturization of the microwave generator 10 and the atomization device 100. In another embodiment, the forward power detection module 40, the voltage-controlled oscillator 11, and the multi-stage power amplification module 13 are mounted on the same substrate to form an integrated circuit chip, further improving the operating efficiency of the microwave generator 10 and the atomization device 100 and further reducing the space occupied by the microwave generator 10.
[0057] The forward power detection module 40 also includes a fourth chip U4, resistors R18, R24, R26, R28, R35, R37, capacitors C27, C29, C31, C33, C61, and a power supply VCC.
[0058] Specifically, the first pin of the fourth chip U4 is connected to the power supply VCC. One end of the capacitor C31 is connected between the first pin of the fourth chip U4 and the power supply VCC, and the other end is connected to ground GND. The second pin of the fourth chip U4 is connected to one end of a resistor R35. The other end of the resistor R35 is connected between the first pin of the fourth chip U4 and the capacitor C31. The third pin of the fourth chip U4 is connected to the microcontroller 20 via a resistor R37. The fourth pin of the fourth chip U4 is connected to ground GND. One end of the capacitor C33 is connected between the third pin of the fourth chip U4 and the resistor R37, and the other end is connected to the fourth pin of the fourth chip U4. The fifth pin of the fourth chip U4 is connected to ground GND. The capacitor C29 is connected to the sixth pin of the fourth chip U4, and the other end is connected to the fifth pin of the fourth chip U4. The seventh pin of the fourth chip U4 is connected to ground GND via a series connection of capacitor C27, resistor R26, capacitor C61, first coupling wire L1, and resistor R18. The first coupling wire L1 is coupled to a second coupling wire L2 connected between DC blocking capacitor C38 and loop element T1. One end of resistor R28 is connected between resistor R26 and capacitor C27 and the other end is connected to ground GND. One end of resistor R24 is connected between resistor R26 and capacitor C61 and the other end is connected to ground.
[0059] In some embodiments, the forward power detection module 40 is coupled via the first coupling line L1 to a second coupling line L2 connected between the DC blocking capacitor C38 and the loop element T1. The forward power detection module 40 is disposed between the third-stage power amplification module 135 and the load 30, and detects the power of the radio frequency signal amplified by the multi-stage power amplification module 13 and outputs a first voltage to the microcontroller 20. Specifically, if the first voltage output from the forward power detection module 40 to the microcontroller 20 indicates that the power of the radio frequency signal amplified by the multi-stage power amplification module 13 is greater than or less than a predetermined range, this indicates that the voltage-controlled oscillator 11 and / or the multi-stage power amplification module 13 are damaged, preventing the atomization device 100 from operating normally. If the voltage-controlled oscillator 11 and / or the multi-stage power amplification module 13 continue to operate, they may be burned out. In this case, the microcontroller 20 can protect the voltage controlled oscillator 11 and / or the multi-stage power amplifier module 13 by turning off the voltage controlled oscillator 11, which makes subsequent maintenance easier and prevents damage from spreading.
[0060] 1 and 8. In some embodiments, the atomizing device 100 may further include a reverse power detection module 50. The reverse power detection module 50 detects the power reflected by the microwave in the load 30 and outputs a second voltage to the microcontroller 20. The microcontroller 20 performs algorithm processing on the first voltage and the second voltage to output a resonant frequency, and controls the frequency of the radio frequency signal output from the voltage-controlled oscillator 11 according to the resonant frequency.
[0061] In one embodiment, the reverse power detection module 50 and the multi-stage power amplification module 13 are mounted on the same substrate to form an integrated circuit chip, thereby reducing the circuit area of the reverse power detection module 50 and the multi-stage power amplification module 13 and ensuring the miniaturization of the microwave generator 10 and the atomization device 100. In another embodiment, the reverse power detection module 50, the voltage controlled oscillator 11, and the multi-stage power amplification module 13 are mounted on the same substrate to form an integrated circuit chip, thereby further reducing the space occupied by the microwave generator 10.
[0062] The reverse power detection module 50 includes a fifth chip U5, an electric resistor R91, an electric resistor R95, a capacitor C89, a capacitor C91, a capacitor C92, a capacitor C93, and a power supply VCC.
[0063] Specifically, the first pin of the fifth chip U5 is connected to the power supply VCC. One end of the capacitor C91 is connected between the first pin of the fifth chip U5 and the power supply VCC, and the other end is connected to ground GND. The second pin of the fifth chip U5 is connected to one end of a resistor R95. The other end of the resistor R95 is connected between the first pin of the fifth chip U5 and the capacitor C91. The third pin of the fifth chip U5 is connected to the microcontroller 20. One end of the capacitor C93 is connected between the third pin of the fifth chip U5 and the microcontroller 20, and the other end is connected to the fourth pin of the fifth chip U5. The fourth pin of the fifth chip U5 is connected to ground GND. The fifth pin of the fifth chip U5 is connected to ground GND. The sixth pin of the fifth chip U5 is connected to one end of a capacitor C89. The other end of the capacitor C89 is connected to the fifth pin of the fifth chip U5. 4, one end of the resistor R17 is connected to the third end of the loop element T1 via the third coupling line L3, and the other end is connected to ground GND. The seventh pin of the fifth chip U5 is connected to ground GND via a series connection of a capacitor C92, a fourth coupling line L4, and an electrical resistor R91. The fourth coupling line L4 is coupled to the first coupling line L1.
[0064] In some embodiments, the reverse power detection module 50 is coupled to the third coupled line L3, which is connected between the electrical resistor R17 and the loop element T1 via the fourth coupled line L4, to detect the microwave power reflected from the load 30 and output a second voltage to the microcontroller 20. The microcontroller 20 performs algorithmic processing on the first and second voltages to output a resonant frequency, and adjusts the frequency of the radio frequency signal output from the voltage-controlled oscillator 11 according to the resonant frequency. This changes the frequency of the radio frequency signal within a certain frequency range, effectively controlling the microwave power in the cavity 31, ensuring a stable inhalation experience of the atomizing device 100, and improving the user experience.
[0065] 1 and 9. In some embodiments, the atomizing device 100 may further include a temperature detection module 60. The temperature detection module 60 includes a thermistor RT1 and an electrical resistor R99. One end of the electrical resistor R99 is electrically connected to the microcontroller 20, and the other end is connected to the first power source V1. One end of the thermistor RT1 is connected between the microcontroller 20 and the electrical resistor R99, and the other end is connected to ground GND.
[0066] In some embodiments, the value of the thermistor RT1 in the temperature detection module 60 can change with changes in the temperature of the load 30 and further outputs a third voltage to the microcontroller 20. The microcontroller 20 turns off the voltage-controlled oscillator 11 if the temperature of the load 30 exceeds a preset temperature range. Specifically, if the temperature of the load 30 exceeds the preset temperature range, the substrate 33 in the cavity body 31 of the load 30 will generate a certain amount of harmful substances, such as formaldehyde and nicotine, due to the high temperature, which will pose a health risk to the user. Therefore, if the temperature of the load 30 exceeds the preset temperature range, the third voltage output from the temperature detection module 60 to the microcontroller 20 can indicate an abnormality in the temperature of the load 30, and the microcontroller 20 turns off the voltage-controlled oscillator 11 and the atomization device 100, thereby preventing the generation of harmful substances due to excessive temperature and thus posing a health risk to the smoker. In some embodiments, the preset temperature range can be adjusted according to specific circumstances, such as the type of substrate 33 and the usage environment.
[0067] See Figures 1 and 9. In some embodiments, the microcontroller 20 may include a sixth chip U6 and a capacitor C3.
[0068] Specifically, the first pin of the sixth chip U6 is connected to the first power supply V1. One end of the capacitor C3 is connected between the first pin of the sixth chip U6 and the first power supply V1, and the other end is connected to ground GND. The second, third, and fourth pins of the sixth chip U6 are all electrically connected to the voltage-controlled oscillator 11. The fifth pin of the sixth chip U6 is connected to ground GND. The sixth pin of the sixth chip is electrically connected to the third pin of the reverse power detection module 50. The seventh pin of the sixth chip U6 is electrically connected to the third pin of the forward power detection module 40. The eighth pin of the sixth chip U6 is electrically connected to the temperature detection module 60.
[0069] 1 and 10, in some embodiments, the voltage-controlled oscillator 11 may include a seventh chip U7, a resistor R1, a resistor R5, a resistor R9, a capacitor C1, a capacitor C2, a capacitor C10, a capacitor C12, a capacitor C14, a capacitor C15, a capacitor C16, a capacitor C17, a capacitor C18, an inductance L1, and a crystal oscillator Y1.
[0070] Specifically, the first, second, and third pins of the seventh chip U7 are electrically connected and then all connected to the first power supply V1. One end of the capacitor C10 is connected between the first power supply V1 and the third pin of the seventh chip U7, and the other end is connected to ground GND. The fourth pin of the seventh chip U7 is connected to one end of the capacitor C12. The other end of the capacitor C12 is connected between the capacitor C10 and the third pin of the seventh chip U7. The fifth pin of the seventh chip U7 is connected to the electrical resistor R6 of the first-stage power amplifier module 131 via a DC blocking capacitor C13. One end of the inductor L1 is connected between the capacitor C10 and the capacitor C12, and the other end is connected between the DC blocking capacitor C13 and the fifth pin of the seventh chip. The sixth pin of the seventh chip U7 is connected to one end of the capacitor C17. The other end of the capacitor C17 is connected to ground GND. The seventh pin of the seventh chip U7 is connected to ground GND. The eighth pin of the seventh chip U7 is connected to one end of capacitor C16. The other end of capacitor C16 is connected to ground GND. The ninth pin of the seventh chip U7 is connected to one end of resistor R9 through capacitor C15. The other end of resistor R9 is connected to ground GND. One end of resistor R5 is connected between pin 9 of the seventh chip U7 and capacitor C15, and the other end is connected between pin 8 of the seventh chip U7 and capacitor C16. One end of capacitor C14 is connected between resistor R5 and capacitor C15, and the other end is connected to ground GND. Pins 10, 11, and 12 of the seventh chip U7 are electrically connected to pins 4, 3, and 2 of the microcontroller 20, respectively. Pin 13 of the seventh chip U7 is connected to pin 3 of crystal oscillator Y1 through series-connected capacitors C1 and C2. Pin 4 of crystal oscillator Y1 is connected to the first power supply V1. The first pin of the crystal oscillator Y1 is floating. The second pin of the crystal oscillator Y1 is connected to earth GND. One end of the electrical resistor R1 is connected between the capacitors C1 and C2, and the other end is connected to earth GND. The capacitor C18 is connected between the fourth pin of the crystal oscillator Y1 and the first power supply V1, and the other end is connected to earth GND.
[0071] In some embodiments, the crystal oscillator Y1 may be, but is not limited to, an active crystal oscillator or a passive crystal oscillator, and can output a more stable, high-frequency radio frequency signal in synchronization with the voltage-controlled oscillator 11.
[0072] DC blocking capacitors C13, C37, C38, and C50 have the property of passing AC but not DC, which allows high-frequency radio frequency signals to pass smoothly through the circuit and prevents the power amplification in multi-stage power amplifier module 13 from being affected by the phenomenon of the previous stage power amplifier module and the next stage power amplifier module being connected in series or influencing each other, which would otherwise occur and affect the normal operation of multi-stage power amplifier module 13.
[0073] During operation of the atomizing device 100, the microcontroller 20 is first electrically connected to pins 10, 11, and 12 of the voltage-controlled oscillator 11 via pins 2, 3, and 4, and turns on the voltage-controlled oscillator 11 via I2C communication. The voltage-controlled oscillator 11 then outputs a radio frequency signal corresponding to the operating frequency (e.g., 2.45 GHz). The radio frequency signal is then power-amplified by the multi-stage power amplifier module 13. The power-amplified radio frequency signal then passes through the loop element T1 and is input into the cavity 31 of the load 30 via the FMA terminal J1 to heat the substrate 33 in the cavity 31. During heating, the atomizing device 100 detects the power of the radio frequency signal amplified by the multi-stage power amplifier module 13 using the forward power detection module 40 and outputs a first voltage to the microcontroller 20. The reverse power detection module 50 can detect the power reflected by the microwave in the load 30 and outputs a second voltage to the microcontroller 20. The microcontroller 20 performs algorithm processing on the first voltage and the second voltage to output a resonant frequency, thereby controlling the frequency of the radio frequency signal output from the voltage-controlled oscillator 11 according to the resonant frequency. In addition, the atomizing device 100 detects the temperature of the load 30 using the temperature detection module 60. The microcontroller 20 turns off the voltage-controlled oscillator 11 when the temperature of the load 30 exceeds a preset temperature range.
[0074] The atomization device 100 of the present invention is equipped with a series-connected multi-stage power amplification module 13 to increase the power of the radio frequency signal from the voltage-controlled oscillator 11, fully satisfying the power requirements of the atomization device 100 and ensuring an improved atomization and aerosol volume, and preventing power mismatch that could result in no atomization or insufficient atomization, which could affect the inhalation comfort. Furthermore, the multi-stage power amplification module 13 is mounted on the same substrate to form an integrated circuit chip, thereby reducing the space occupied by the multi-stage power amplification module 13, improving the efficiency of the entire amplification link, and ensuring the miniaturization of the microwave generator and the atomization device.
[0075] The atomization device 100 also includes a forward power detection module 40 that detects the power amplified by the multi-stage power amplification module 13 and outputs a first voltage to the microcontroller 20. If the power is higher or lower than a preset range, the microcontroller 20 turns off the voltage-controlled oscillator 11 to protect the circuit. The atomization device 100 also includes a reverse power detection module 50 that detects the power reflected by the microwaves from the load 30 and outputs a second voltage. This, together with the first voltage, is processed by the microcontroller 20 through an algorithm to obtain the resonant frequency, which controls the frequency generated by the voltage-controlled oscillator 11, ensuring the uniformity of the aerosol amount generated by the atomization device 100 and maintaining a consistent inhalation experience. The atomization device 100 also includes a temperature detection module 60 that detects the temperature of the load 30. This prevents harmful substances from being generated in the substrate 33 of the cavity body 31 due to excessive temperature, and also protects other components in the circuit from damage caused by high temperatures.
[0076] In the description herein, reference terms such as "one embodiment," "some embodiments," "examples," "particular examples," and "some examples" mean that the particular features, structures, materials, or characteristics described in combination with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, general expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, those skilled in the art may combine or combine various embodiments or examples described herein, and features of different embodiments or examples, unless inconsistent.
[0077] It should be understood by those skilled in the art of embodiments of the invention that any process or method illustrated in a flowchart or otherwise may be understood as a module, segment, or portion representing code comprising one or more executable instructions for performing particular logical functions or process steps, and that the scope of preferred embodiments of the invention includes additional implementations that may perform functions out of the order shown or described, including performing functions substantially simultaneously or in reverse order depending on the functionality involved.
[0078] While the embodiments of the present invention have been shown and described above, it should be understood that the above embodiments are illustrative and should not be construed as limiting the present invention, and that those skilled in the art may make changes, modifications, substitutions and variations to the above embodiments within the scope of the present invention.
Claims
1. A microwave generating device, a voltage controlled oscillator for generating a high frequency radio frequency signal; a multi-stage power amplifier module connected in series; The multi-stage power amplifier module is connected to the voltage-controlled oscillator, receives the radio frequency signal, amplifies the power of the received signal, and outputs the amplified radio frequency signal to a load. The microwave generator is characterized in that the multi-stage power amplifier module is mounted on the same substrate to form an integrated circuit chip.
2. 2. The microwave generator according to claim 1, wherein the multistage power amplifier module and the voltage-controlled oscillator are mounted on the same substrate to form the integrated circuit chip.
3. the multi-stage power amplification module includes a first-stage power amplification module, a second-stage power amplification module and a third-stage power amplification module; 2. The microwave generator according to claim 1, wherein the first-stage power amplification module, the second-stage power amplification module, and the third-stage power amplification module are sequentially connected in series between the voltage-controlled oscillator and the load, and amplify the radio frequency signal output from the voltage-controlled oscillator in a stepwise manner.
4. The first-stage power amplification module includes: a first chip, a resistor R6, a resistor R7, a resistor R8, a resistor R13, a resistor R15, a resistor R16, a resistor R19, a capacitor C21, a capacitor C22, a capacitor C24, a capacitor C26, a capacitor C36, a capacitor C42, an emitter capacitor CE, an inductance L2, and an inductance L3; The first pin of the first chip is connected to the output pin of the voltage-controlled oscillator via a series-connected capacitor C36 and an electrical resistor R36 in sequence; One end of the electrical resistor R7 is connected between the electrical resistor R6 and the output pin of the voltage-controlled oscillator, and the other end is connected to ground. One end of the electrical resistor R8 is connected between the electrical resistor R6 and the capacitor C36, and the other end is connected to the other end of the electrical resistor R7. The second pin of the first chip is connected to one end of an inductance L3; The other end of the inductance L3 is connected to the first power supply. The capacitor C42 is connected between the inductance L3 and the first power supply. the third and fourth pins of the first chip are connected to ground; The fifth pin of the first chip is connected to a first power supply via an electrical resistor R15; The capacitor C21 has one end connected between the first power supply and the electrical resistor R15, and the other end connected to ground. The sixth pin of the first chip is connected to a first power supply via an electrical resistor R16; The capacitor C22 has one end connected between the first power supply and the electrical resistor R16 and the other end connected to ground. The seventh pin of the first chip is connected to an emitter capacitor CE via an electrical resistor R19; One end of the capacitor C26 is connected between the resistor R19 and the seventh pin of the first chip, and the other end is connected to ground. One end of the electrical resistor R13 is connected between the electrical resistor R19 and the seventh pin of the first chip, and the other end is connected to the other end of the capacitor C26. The eighth and ninth pins of the first chip are electrically connected to each other and then connected to the second-stage power amplifier module via a DC blocking capacitor C50; an inductance L2, one end of which is connected between the eighth pin of the first chip and the DC blocking capacitor C50, and between the ninth pin of the first chip and the DC blocking capacitor C50, and the other end of which is connected to a second power supply; 4. The microwave generator according to claim 3, wherein one end of the capacitor C24 is connected between the inductance L2 and the second power supply, and the other end is connected to ground.
5. The second-stage power amplification module includes a second chip, a capacitor C41, a capacitor C51, a capacitor C52, a capacitor C53, and an inductance L4; The first pin of the second chip is connected to the first stage power amplifier module via a DC blocking capacitor C50; a capacitor C52 having one end connected between the DC blocking capacitor C50 and the first pin of the second chip and the other end connected to the second pin of the second chip; a second pin of the second chip is connected to ground; The third pin of the second chip is connected to the third stage power amplifier module via a DC blocking capacitor C37; one end of the inductor L4 is connected between the third pin of the second chip and the DC blocking capacitor C37, and the other end is connected to the third power supply; The capacitor C41 has one end connected between the inductance L4 and the third power supply and the other end connected to ground. One end of the capacitor C51 is connected between the third pin of the second chip and the inductance L4, and the other end is connected to the second pin of the second chip.
4. The microwave generator according to claim 3, wherein one end of the capacitor C51 is connected between the inductance L4 and the DC blocking capacitor C37, and the other end is connected to the second pin of the second chip.
6. the load includes a cavity body for storing a substrate and an FMA terminal provided in the cavity body; The third-stage power amplifier module includes: a third chip, a variable resistor RT11, a resistor R14, a resistor R36, a capacitor C20, a capacitor C39, a capacitor C54, a power supply VG, and a diode VD; The first pin and the second pin of the third chip are electrically connected to each other, and then connected to the second-stage power amplifier module via a DC blocking capacitor C37; One end of the electrical resistor R14 is connected between the first pin of the third chip and the DC blocking capacitor C37, and between the second pin of the third chip and the DC blocking capacitor C37, and the other end is connected to the power supply VG; The variable electrical resistor RT11 is placed between the power supply VG and the electrical resistor R14. The variable electrical resistor RT11 has a first end connected to the fourth power supply, a second end connected to ground, and a third end connected between the power supply VG and the electrical resistor R14, One end of the capacitor C20 is connected between the electrical resistor R14 and the power supply VG, and the other end is connected to ground. The electrical resistor R36 has one end connected to the third end of the variable electrical resistor RT11 and the other end connected to the second end of the variable electrical resistor RT11. The third pin and the fourth pin of the third chip are electrically connected to each other, and then connected to the first pin of the loop element T1 via a DC blocking capacitor C38; The second pin of the loop element T1 is connected to the FMA terminal; a diode VD is connected between the third pin of the third chip and DC blocking capacitor C38, and between the fourth pin of the third chip and DC blocking capacitor C38; a capacitor C39, one end of which is connected between the third pin of the third chip and the diode VD and between the fourth pin of the third chip and the diode VD, and the other end of which is connected to ground; One end of the capacitor C54 is connected between the DC blocking capacitor C38 and the diode VD, and the other end is connected to ground.
4. The microwave generator according to claim 3, wherein a fifth pin of the third chip is connected to ground.
7. 2. The microwave generator according to claim 1, wherein the material of the substrate is at least one of ceramics and metal.
8. An atomization device, The microwave generator according to any one of claims 1 to 7, and a microcontroller electrically connected to the microwave generator.
9. a forward power detection module for detecting the power of the radio frequency signal amplified by the multi-stage power amplification module and outputting a first voltage to the microcontroller; The atomizing device of claim 8 , wherein the microcontroller turns off the voltage-controlled oscillator when the power of the radio frequency signal is greater than or less than a preset range.
10. The forward power detection module and the multi-stage power amplification module are mounted on the same substrate to form the integrated circuit chip; or The atomizing device according to claim 9 , wherein the forward power detection module, the voltage-controlled oscillator, and the multi-stage power amplification module are mounted on a single substrate to form the integrated circuit chip.
11. The forward power detection module includes: a fourth chip, a resistor R18, a resistor R24, a resistor R26, a resistor R28, a resistor R35, a resistor R37, a capacitor C27, a capacitor C29, a capacitor C31, a capacitor C33, a capacitor C61, and a power supply VCC; The first pin of the fourth chip is connected to a power supply VCC; The capacitor C31 has one end connected between the first pin of the fourth chip and the power supply VCC, and the other end connected to ground. The second pin of the fourth chip is connected to one end of an electrical resistor R35; The other end of the electrical resistor R35 is connected between the first pin of the fourth chip and the capacitor C31. The third pin of the fourth chip is connected to the microcontroller via a resistor R37; a fourth pin of the fourth chip is connected to ground; One end of the capacitor C33 is connected between the third pin of the fourth chip and the electrical resistor R37, and the other end is connected to the fourth pin of the fourth chip. The fifth pin of the fourth chip is connected to ground; A capacitor C29 has one end connected to the sixth pin of the fourth chip and the other end connected to the fifth pin of the fourth chip; The seventh pin of the fourth chip is connected to ground via a series connection of a capacitor C27, an electrical resistor R26, a capacitor C61, a first coupling wire and an electrical resistor R18; The first coupled line forms a coupling with a second coupled line connected between the DC blocking capacitor C38 and the loop element T1; One end of the electrical resistor R28 is connected between the electrical resistor R26 and the capacitor C27, and the other end is connected to ground. The atomizing device according to claim 9, wherein one end of the electrical resistor R24 is connected between the electrical resistor R26 and the capacitor C61, and the other end is connected to ground.
12. a reverse power detection module for detecting reflected microwave power at the load and outputting a second voltage to the microcontroller; 10. The atomization device according to claim 9, wherein the microcontroller performs an algorithmic process on the first voltage and the second voltage to output a resonant frequency, and controls the frequency of the radio frequency signal output from the voltage-controlled oscillator according to the resonant frequency.
13. The reverse power detection module and the multi-stage power amplification module are mounted on the same substrate to form the integrated circuit chip; or The atomizing device according to claim 12, wherein the reverse power detection module, the voltage-controlled oscillator, and the multi-stage power amplification module are mounted on a single substrate to form the integrated circuit chip.
14. The reverse power detection module includes a fifth chip, a resistor R91, a resistor R95, a capacitor C89, a capacitor C91, a capacitor C92, a capacitor C93, and a power supply VCC; The first pin of the fifth chip is connected to a power supply VCC; One end of the capacitor C91 is connected between the first pin of the fifth chip and the power supply VCC, and the other end is connected to ground. The second pin of the fifth chip is connected to one end of an electrical resistor R95; The other end of the electrical resistor R95 is connected between the first pin of the fifth chip and the capacitor C91. a third pin of the fifth chip is connected to the microcontroller; a capacitor C93, one end of which is connected between the third pin of the fifth chip and the microcontroller, and the other end of which is connected to the fourth pin of the fifth chip; The fourth pin of the fifth chip is connected to ground; The fifth pin of the fifth chip is connected to ground; The sixth pin of the fifth chip is connected to one end of a capacitor C89. The other end of the capacitor C89 is connected to the fifth pin of the fifth chip. The electrical resistor R17 has one end connected to the loop element T1 via a third coupling line and the other end connected to ground. The seventh pin of the fifth chip is connected to ground via a series connection of a capacitor C92, a fourth coupling wire and an electrical resistor R91; The atomizing device according to claim 12 , wherein the fourth bonding line is bonded to the first bonding line.
15. a temperature detection module for detecting a temperature of the load and outputting a third voltage; The atomizing device according to claim 8 , wherein the microcontroller turns off the voltage-controlled oscillator when the temperature of the load exceeds a preset temperature range.
16. The temperature detection module includes a thermistor RT1 and an electrical resistor R99; an electrical resistor R99, one end of which is electrically connected to the microcontroller and the other end of which is connected to a first power supply; The atomizing device according to claim 15, wherein one end of the thermistor RT1 is connected between the microcontroller and the electrical resistor R99, and the other end is connected to ground.
17. the microcontroller includes a sixth chip and a capacitor C3; a first pin of the sixth chip is connected to a first power supply; a capacitor C3, one end of which is connected between the first pin of the sixth chip and the first power supply, and the other end of which is connected to ground; the second pin, the third pin, and the fourth pin of the sixth chip are all electrically connected to the voltage-controlled oscillator; The fifth pin of the sixth chip is connected to ground; The sixth pin of the sixth chip is electrically connected to a reverse power detection module; The seventh pin of the sixth chip is electrically connected to a forward power detection module; The atomizing device according to claim 8 , wherein the eighth pin of the sixth chip is electrically connected to a temperature detection module.
18. The voltage-controlled oscillator includes a seventh chip, a resistor R1, a resistor R5, a resistor R9, a capacitor C1, a capacitor C2, a capacitor C10, a capacitor C12, a capacitor C14, a capacitor C15, a capacitor C16, a capacitor C17, a capacitor C18, an inductor L1, and a crystal oscillator Y1; the first pin, the second pin, and the third pin of the seventh chip are electrically connected to each other and then connected to a first power supply; A capacitor C10 has one end connected between the first power supply and the third pin of the seventh chip, and the other end connected to ground; The fourth pin of the seventh chip is connected to one end of a capacitor C12; The other end of the capacitor C12 is connected between the capacitor C10 and the third pin of the seventh chip; The fifth pin of the seventh chip is connected to the first stage power amplifier module via a DC blocking capacitor C13; One end of inductor L1 is connected between capacitor C10 and capacitor C12, and the other end is connected between DC blocking capacitor C13 and pin 5 of the seventh chip; The sixth pin of the seventh chip is connected to one end of a capacitor C17. The other end of the capacitor C17 is connected to ground. The seventh pin of the seventh chip is connected to ground; The eighth pin of the seventh chip is connected to one end of a capacitor C16. The other end of the capacitor C16 is connected to ground. The ninth pin of the seventh chip is connected to one end of a resistor R9 via a capacitor C15. The other end of the electrical resistor R9 is connected to ground. One end of the electrical resistor R5 is connected between the 9th pin of the 7th chip and the capacitor C15, and the other end is connected between the 8th pin of the 7th chip and the capacitor C16. One end of the capacitor C14 is connected between the electrical resistor R5 and the capacitor C15, and the other end is connected to ground. the 10th pin, the 11th pin, and the 12th pin of the seventh chip are all electrically connected to the microcontroller; The 13th pin of the seventh chip is connected to the 3rd pin of the crystal oscillator Y1 via a series-connected capacitor C1 and a capacitor C2; The fourth pin of the crystal oscillator Y1 is connected to the first power supply; The first pin of the crystal oscillator Y1 is floating, The second pin of the crystal oscillator Y1 is connected to ground, One end of the electrical resistor R1 is connected between the capacitors C1 and C2, and the other end is connected to ground. The atomizing device according to claim 8, wherein one end of the capacitor C18 is connected between the fourth pin of the crystal oscillator Y1 and the first power supply, and the other end is connected to ground.
Citation Information
Patent Citations
Microwave heating control method and device and electronic equipment
CN114980395A
Atomization chip driving control circuit based on filter circuit
CN210351111U
High-frequency heating device
JP2004340471A
Microwave utilizing device
JP2007329021A
Microwave heating device
JP2010225501A