Gas injection device, substrate processing device, and thin film deposition method

Abstract

The present invention relates to a gas injection device, a substrate processing apparatus, and a thin film deposition method, and more particularly to a gas injection device, a substrate processing apparatus, and a thin film deposition method for injecting gas onto a substrate to deposit a thin film. A gas injection device according to an embodiment of the present invention includes a first electrode having a first gas supply path and a second gas supply path that are provided separately, and a first gas supply port and a second gas supply port that are connected to the first gas supply path and the second gas supply path, respectively; and a second electrode that is electrically insulated from the first electrode, is spaced apart from the first electrode, and has a plurality of openings that are arranged so as to be alternately offset from the first gas supply port and the second gas supply port.

Description

[Technical Field]

[0001] The present invention relates to a gas injection device, a substrate processing apparatus, and a thin film deposition method, and more particularly to a gas injection device, a substrate processing apparatus, and a thin film deposition method for injecting gas onto a substrate to deposit a thin film. [Background technology]

[0002] In general, semiconductor devices or display devices are manufactured by depositing various materials as thin films on a substrate and then patterning the deposited materials, which involves various processes, such as a deposition process, an etching process, a cleaning process, and a drying process.

[0003] The deposition process is used to form a thin film on a substrate that has properties required for a semiconductor device or display device. Such a deposition process is typically performed using a substrate processing apparatus that uses a gas injection device with multiple injection ports to inject a process gas and form a thin film on the substrate through a chemical reaction.

[0004] Thus, when forming a thin film on a substrate using a gas injection device with multiple injection ports, ensuring deposition uniformity is a very important issue. For this reason, there is currently an increasing need for a gas injection device with an improved aperture structure for depositing a uniform thin film. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Korean Patent Publication No. 10-2004-0104197 Summary of the Invention [Problem to be solved by the invention]

[0006] The present invention provides a gas injection apparatus, a substrate processing apparatus, and a thin film deposition method that are capable of depositing a uniform thin film. [Means for solving the problem]

[0007] A gas injection device according to an embodiment of the present invention includes a first electrode having a first gas supply path and a second gas supply path that are provided separately, and a first gas supply port and a second gas supply port that are connected to the first gas supply path and the second gas supply path, respectively; and a second electrode that is electrically insulated from the first electrode, is spaced apart from the first electrode, and has a plurality of openings that are arranged so as to be alternately offset from the first gas supply port and the second gas supply port.

[0008] The second electrode may be spaced apart from the first electrode by more than 3 mm and not more than 25 mm.

[0009] The opening may include a first opening formed on the first electrode side, and a second opening connected to the first opening and having a larger diameter than the first opening.

[0010] The first opening may have a diameter of 1 to 3 mm.

[0011] The second opening may have a diameter of 10 to 14 mm.

[0012] The opening may further include a third opening between the first opening and the second opening, the third opening connecting the first opening and the second opening.

[0013] The third opening may have a shape that increases in cross section as it progresses towards the second opening.

[0014] The second opening may have a length of 25 to 75 mm.

[0015] The second electrode may have a thickness of 35 to 100 mm.

[0016] The openings may be arranged at intervals of 12 to 20 mm.

[0017] The first and second openings may have different lengths.

[0018] The length of the first opening may be greater than the length of the second opening.

[0019] The length of the second opening may be greater than the length of the first opening.

[0020] Furthermore, a substrate processing apparatus according to an embodiment of the present invention includes a chamber, a substrate support device disposed inside the chamber for supporting a substrate to be loaded into the chamber, the aforementioned gas injection device disposed inside the chamber for injecting gas toward the substrate support device, and a power supply device connected to the gas injection device for supplying power to the gas injection device.

[0021] The power supply may be connected to the second electrode to supply power to the second electrode.

[0022] The power supply may supply power to the first electrode and the second electrode.

[0023] Furthermore, a thin film deposition method according to an embodiment of the present invention is a thin film deposition method for depositing a thin film using the aforementioned substrate processing apparatus, in which a first gas is supplied through the first gas supply path and a second gas is supplied through the second gas supply path to deposit a thin film on a substrate.

[0024] A plasma may be generated between the first electrode and the second electrode, and a plasma may be generated within the second electrode to deposit a thin film on a substrate.

[0025] A plasma may be generated between the second electrode and the substrate support device to deposit a thin film on the substrate.

[0026] At least one of the first gas and the second gas may be supplied to deposit a thin film on a substrate by chemical vapor deposition (CVD) or atomic layer deposition (ALD).

[0027] The thin film may include at least one of an IZO thin film in which zinc oxide (ZnO) is doped with indium (In), a GZO thin film in which zinc oxide (ZnO) is doped with gallium (Ga), an IGZO thin film in which zinc oxide (ZnO) is doped with indium (In) and gallium (Ga), a high-K thin film, a silicon oxide (SiO2) thin film, and a silicon nitride (SiN) thin film. [Effects of the Invention]

[0028] According to embodiments of the present invention, the spacing between the openings through which the process gas is injected can be minimized to improve deposition uniformity.

[0029] Furthermore, a high density plasma can be formed, which allows a high quality thin film to be formed. [Brief explanation of the drawings]

[0030] [Figure 1] 1 is a diagram schematically illustrating a substrate processing apparatus according to an embodiment of the present invention. [Figure 2] 3A and 3B are diagrams showing the arrangement of openings in a gas injection device according to an embodiment of the present invention; [Figure 3] 3A and 3B are diagrams illustrating how supply ports and openings are formed in a gas injection device according to an embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0031] Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, and can be embodied in various different forms. The following embodiments are provided solely for the purpose of complete disclosure of the present invention and to fully convey the scope of the invention to those skilled in the art.

[0032] Throughout the specification, when a component, such as a film, region, or substrate, is referred to as being "on" another component, it can be interpreted as meaning that the component may be directly "on" and in contact with the other component, or that there may be further components interposed therebetween.

[0033] Additionally, relative terms and phrases such as "upper" or "lower" may be used herein to describe the relative relationship of one element to another element as depicted in the figures. It should be understood that the relative terms and phrases are intended to include other orientations of the elements in addition to the orientation depicted in the figures. To illustrate the present invention in detail, the drawings may be exaggerated and like reference numerals may refer to like components throughout the drawings.

[0034] Fig. 1 is a diagram schematically illustrating a substrate processing apparatus according to an embodiment of the present invention, Fig. 2 is a diagram illustrating the arrangement of openings in a gas injection device according to an embodiment of the present invention, and Fig. 3 is a diagram illustrating the formation of supply ports and openings in the gas injection device according to an embodiment of the present invention.

[0035] 1 to 3, a substrate processing apparatus according to an embodiment of the present invention includes a chamber 10, a substrate support device 20 disposed inside the chamber 10 to support a substrate S loaded into the chamber 10, a gas supply device 300 disposed inside the chamber 10 to inject gas into the substrate support device 20, and a power supply device 400 connected to the gas injection device 300 to supply power to the gas injection device for generating plasma in the chamber 10. The substrate processing apparatus may further include a control device (not shown) for controlling the power supply device 400.

[0036] The chamber 10 provides a predetermined reaction space and keeps it airtight. The chamber 10 may include a body 14 having a generally circular or rectangular flat portion and a sidewall portion extending upward from the flat portion, thereby providing the predetermined reaction space, and a generally circular or rectangular lid 12 located on the body 14 and keeping the reaction space airtight. However, the chamber 10 is not limited thereto and can be fabricated in a wide variety of shapes corresponding to the shape of the substrate S.

[0037] An exhaust port (not shown) may be formed in a predetermined region of the bottom surface of the chamber 10, and an exhaust pipe (not shown) connected to the exhaust port may be provided on the outside of the chamber 10. The exhaust pipe may also be connected to an exhaust device (not shown). A vacuum pump such as a turbomolecular pump can be used as the exhaust device. Therefore, the inside of the chamber 10 can be vacuum-sucked to a predetermined reduced pressure atmosphere, for example, a predetermined pressure of 0.1 mTorr or less, by the exhaust device. The exhaust pipe may be provided not only on the bottom surface of the chamber 10, but also on the side of the chamber 10 below the substrate support device 20 described below. Needless to say, multiple exhaust pipes and associated exhaust devices may also be provided to shorten the exhaust time.

[0038] Meanwhile, a substrate S that has been carried into the chamber 10 for a substrate processing step, for example, a thin film deposition step, may be placed on the substrate support device 20. To be able to place and support such a substrate S, the substrate support device 20 may be provided with, for example, an electrostatic chuck or the like to adsorb and hold the substrate S by electrostatic force, or may support the substrate S by vacuum adsorption or mechanical force.

[0039] The substrate support device 20 may be provided in a shape corresponding to the shape of the substrate S, for example, a circular or rectangular shape. The substrate support device 20 may include a substrate support stage 22 on which the substrate S is placed, and an elevator 24 disposed below the substrate support stage 22 to raise and lower the substrate support stage 22. Here, the substrate support stage 22 may be larger than the substrate S, and the elevator 24 is provided to support at least one region, for example, the center, of the substrate support stage 22. Once the substrate S is placed on the substrate support stage 22, the elevator 24 may move the substrate support stage 22 closer to the gas injection device 300. A heater (not shown) may be provided inside the substrate support stage 22. The heater generates heat at a predetermined temperature to heat the substrate support stage 22 and the substrate S placed on the substrate support stage 22, thereby ensuring uniform deposition of a thin film on the substrate S.

[0040] A gas supply device may be provided on the lid 12 of the chamber 10. The gas supply device may be provided so as to penetrate the lid 12 of the chamber 10 and may include a first gas supply unit 110 and a second gas supply unit 120 for supplying a first gas and a second gas to the gas injection device 300, respectively. Here, the first gas may include a source gas, and the second gas may include a reactive gas. However, the present invention is not limited thereto. The first gas may include a reactive gas, and the second gas may include a source gas. Alternatively, at least one of the first gas and the second gas may include a mixed gas in which a source gas and a reactive gas are mixed. It goes without saying that at least one of the first gas and the second gas may be a purge gas. That is, the first gas supply unit 110 and the second gas supply unit 120 do not necessarily each supply a single gas, but may each be configured to supply multiple gases simultaneously, or may each be configured to supply a gas selected from multiple gases.

[0041] The gas injection device 300 is disposed inside the chamber 10, for example, on the underside of the lid 12, and a first gas supply path for injecting and supplying a first gas onto the substrate and a second gas supply path for injecting and supplying a second gas onto the substrate are formed inside the gas injection device 300. The first gas supply path and the second gas supply path may be provided independent of and separated from each other, and the first gas and the second gas may be supplied onto the substrate separately so as not to be mixed within the gas injection device 300.

[0042] More specifically, the gas injection device 300 includes a first electrode having a first gas supply port 312 and a second gas supply port 314 connected to the first gas supply port 312 and the second gas supply port 314, respectively, and a second electrode 330 spaced apart from the first electrode and having a plurality of openings 332 arranged so as to be staggered relative to the first gas supply port 312 and the second gas supply port 314.

[0043] The first electrode may include an upper frame 310 and a lower frame 320. The upper frame 310 is detachably coupled to the lower surface of the lid 12, and a portion of its upper surface, for example, the center of the upper frame 310, is spaced a predetermined distance from the lower surface of the lid 12. This allows a first gas from the first gas supply unit 110 to diffuse in the space between the upper surface of the upper frame 310 and the lower surface of the lid 12. The lower frame 320 is spaced a predetermined distance from the lower surface of the upper frame 310. This allows a second gas from the second gas supply unit 120 to diffuse in the space between the upper surface of the lower frame 320 and the lower surface of the upper frame 310. The upper frame 310 and the lower frame 320 may be integrally formed so as to be connected along their outer circumferential surfaces to provide a separated space therein, or may have a structure in which the outer circumferential surfaces are sealed by a first seal member 350. In this case, the first sealing member 350 may be formed from an insulating material to electrically insulate the upper frame 310 and the lower frame 320 from each other, or conversely, it may be formed from a conductive material to electrically connect the upper frame 310 and the lower frame 320 to each other.

[0044] The first gas supply path may be formed such that the first gas from the first gas supplier 110 is diffused in the space between the lower surface of the lid 12 and the upper frame 310, and is supplied to the inside of the chamber 10 through the upper frame 310 and the lower frame 320. In this case, the first gas supply port 312 may be formed to be connected to the first gas supply path, or may be formed at a lower part of the space between the upper surface of the upper frame 310 and the lower surface of the lid 12, penetrating the upper frame 310 and the lower frame 320 so as to be isolated from the space between the upper surface of the lower frame 320 and the lower surface of the upper frame 310.

[0045] The second gas supply path may be formed such that the second gas from the second gas supply unit 120 is diffused in the space between the lower surface of the upper frame 310 and the upper surface of the lower frame 320 and is supplied to the inside of the chamber 10 through the lower frame 320. In this case, the second gas supply port 322 may be formed to be connected to the second gas supply path, or may be formed to be formed to penetrate the lower frame 320 at a lower part of the space between the upper frame 310 and the lower surface thereof.

[0046] As a result, the first gas supply path and the second gas supply path can be disconnected from each other, and the first gas and the second gas can be supplied separately from the gas supply device to the lower side through the first electrode.

[0047] The second electrode 330 may be insulated from the first electrode and disposed below the first electrode at a distance. That is, the second electrode 330 may be insulated from the lower frame 320 and disposed below the lower frame 320 at a distance. The second electrode 330 is disposed at a predetermined distance D1 from the lower surface of the lower frame 320. As a result, the first gas and the second gas supplied to the lower side via the first electrode can be diffused in the space between the upper surface of the second electrode 330 and the lower surface of the lower frame 320. The lower frame 320 and the second electrode 330 may be structured such that their outer peripheries are sealed by a second sealing member 360. In this case, the second sealing member 360 may be formed of an insulating material for electrically insulating the lower frames 320 from each other.

[0048] Here, the second electrode 330 may be disposed below the first electrode at a distance such that a plasma sheath region that can be formed on the surface of the first electrode, i.e., the lower surface of the lower frame 320, and a plasma sheath region that can be formed on the surface of the second electrode 330, i.e., the upper surface of the second electrode 330, do not overlap. Here, the plasma sheath region refers to a dark field region where positive (+) ions are densely packed between the plasma and the surface of the structure and energy exchange occurs, but plasma is hardly formed.

[0049] If the plasma sheath region that can be formed on the lower surface of the lower frame 320 and the plasma sheath region that can be formed on the upper surface of the second electrode 330 overlap, plasma will not be formed between the lower surface of the lower frame 320 and the upper surface of the second electrode 330. However, in an embodiment of the present invention, the lower frame 320 and the second electrode 330 are positioned at a distance such that the plasma sheath region that can be formed on the lower surface of the lower frame 320 and the plasma sheath region that can be formed on the upper surface of the second electrode 330 do not overlap, thereby making it possible to generate plasma between the lower surface of the lower frame 320 and the upper surface of the second electrode 330.

[0050] On the other hand, if the space between the lower surface of the lower frame 320 and the upper surface of the second electrode 330 is too large, not only may the gas become congested between the lower surface of the lower frame 320 and the upper surface of the second electrode 330, but the entire gas injection device may become bulky. For this reason, the second electrode 330 may be spaced from the first electrode by more than 3 mm but not more than 25 mm. If the second electrode 330 is spaced from the first electrode by less than 3 mm, plasma cannot be generated in the space between the lower surface of the lower frame 320 and the upper surface of the second electrode 330. If the second electrode 330 is spaced from the first electrode by more than 25 mm, it becomes difficult to deposit a high-quality thin film.

[0051] The second electrode 330 also has a plurality of openings 332 that are arranged so as to be alternately offset from the first gas supply port 312 and the second gas supply port 322. That is, as shown in FIG. 2 , the second electrode 330 has the plurality of openings 332 formed so as not to overlap either the first gas supply port 312 or the second gas supply port 322 when the first electrode 330 and the second electrode 330 are viewed from above or below. These plurality of openings 332 may be formed so as to be respectively positioned between the first gas supply port 312 and the second gas supply port 322 along at least one direction when the first electrode 330 and the second electrode 330 are viewed from above or below. Furthermore, the plurality of openings 332 may also be formed so as to be respectively positioned at central positions between the first gas supply port 312 and the second gas supply port 322 along at least one direction.

[0052] If the openings 332 were arranged to overlap the first gas supply port 312 and the second gas supply port 314, most of the gas supplied from the first gas supply port 312 and the second gas supply port 314 would be injected through the openings 332, which are arranged to overlap the first gas supply port 312 and the second gas supply port 314, respectively. However, not all of the gas would be injected downward through the openings 332; some of the gas would not be injected directly through the openings 332 but would flow into the space between the lower surface of the lower frame 320 and the upper surface of the second electrode 330, potentially causing congestion in the space. Such congested gas would hinder the smooth flow of gas and lead to the formation of particles. Therefore, in the present invention, a plurality of openings 332 may be formed in the second electrode 330 so as to be staggered with respect to the first gas supply port 312 and the second gas supply port 322, respectively.

[0053] 3, each of the openings 332 may include a first opening 333 formed on the first electrode side and a second opening 335 connected to the first opening 333 and having a diameter larger than that of the first opening 333. That is, each of the openings 332 may include the first opening 333 formed at a predetermined length H1 from the upper surface of the second electrode 330 and the second opening 335 formed at a predetermined length H2 from the lower surface of the second electrode 330. In this case, the first opening 333 is a gas inlet, and gas diffused in the space between the lower surface of the lower frame 320 and the upper surface of the second electrode 330 flows into the opening 332 through the first opening 333. In contrast, the second opening 335 is a gas outlet, and the gas flowing into the opening 332 is sprayed to the lower side of the second electrode 330 through the second opening 335. The first openings 333 may be arranged so as to be staggered with the first gas supply ports 312 and the second gas supply ports 322, and the second openings 335 may be formed to extend below the first openings 333 so as to have a diameter larger than that of the first openings 333. Meanwhile, each opening 332 may further include a third opening 334 between the first opening 333 and the second opening 335, connecting the first opening 333 and the second opening 335.

[0054] The first openings 333 guide gas diffused between the lower surface of the lower frame 320 and the upper surface of the second electrode 330 to the second openings 335 below. The first openings 333 have a diameter D2 selected to uniformly guide gas diffused between the lower surface of the lower frame 320 and the upper surface of the second electrode 330 to each of the second openings 335. In this case, the first openings 333 may have a diameter D2 that allows a plasma sheath region to be formed inside. That is, the first openings 333 may form a plasma sheath region in which almost no plasma is formed inside, with all of the plasma sheath regions that can be formed on the inner surface of the second plate 330 that forms the first openings 333 overlapping each other. For this purpose, the first openings 333 may have a diameter D2 of 1 to 3 mm. If the diameter D2 of the first opening 333 is less than 1 mm, gas will not be able to flow smoothly through the first opening 333, and if the diameter D2 is greater than 3 mm, plasma will be generated in the first opening 333, which may result in clogging by particles. Such first opening 333 may be formed to a length H1 of 10 to 25 mm from the upper surface of the second plate 330.

[0055] The third opening 334 serves to smoothly transfer gas supplied through the first opening 333 from below the first opening 333 to the second opening 335. The third opening 334 may have a shape in which the cross section increases from the lower end of the first opening 333 to the upper end of the second opening 335, thereby allowing the gas supplied through the first opening 333 to be guided through the third opening 334 without congestion and smoothly transferred to the second opening 335. However, the third opening 334 is not an essential component, and if the third opening 334 is omitted, the second opening 335 may be directly connected to the lower side of the first opening 333.

[0056] The second opening 335 is formed and connected to the underside of the first opening 333 or the underside of the third opening 334. The second opening 335 generates plasma within the cylindrical electrode. That is, the second opening 335 provides a large surface area to promote plasma ionization of the gas flowing into the second opening 335, thereby generating high-density plasma.

[0057] Such second openings 335 may have a diameter D3 of 10 to 14 mm. If the diameter D3 of the second openings 335 is less than 10 mm, high-density plasma cannot be generated. Furthermore, if the diameter D3 of the second openings 335 exceeds 14 mm, the distance between the second openings 335 becomes too wide, making it impossible to deposit a uniform thin film. If the distance between the second openings 335 becomes too wide, the gas ejected from each second opening 335 will concentrate at a specific position on the substrate S, causing uneven deposition. However, if the distance between the second openings 335 is narrowed, the gas ejected from each second opening 335 will be able to overlap on the substrate S, resulting in a more uniform thin film being deposited. In order to deposit a uniform thin film on the substrate S, the second openings 335 need to be arranged at intervals of 12 to 20 mm. If the diameter D3 of the second openings 335 is controlled to 14 mm or less, the second openings 335 can be arranged at intervals of 12 to 20 mm, thereby improving the deposition uniformity.

[0058] On the other hand, the second opening 335 may have a length H2 of 25 to 75 mm. That is, the second opening 335 may be formed with a length H2 of 25 to 75 mm from the lower surface of the second electrode 330 to the upper side. If the length H2 of the second opening 335 is less than 25 mm, sufficient plasma density cannot be achieved. On the other hand, if the length H2 of the second opening 335 exceeds 75 mm, ions generated in the second opening 335 may collide with the inner surface of the second electrode 330 that forms the second opening 335, which may cause damage to the hole due to sputtering. For this reason, the second opening 335 may have a length H2 of 25 to 75 mm.

[0059] As described above, the first opening 333 may be formed with a length H1 of 10 to 25 mm. The second opening 335 may have a length H2 of 25 to 75 mm. Therefore, the second electrode 330 may be formed with a thickness of 35 to 100 mm. If the second electrode 330 is formed with a thickness of less than 35 mm, there is a risk that the second electrode 330 will sag under its own weight. If the second electrode 330 is formed with a thickness of more than 75 mm, the weight will increase and the second electrode 330 will occupy an excessively large amount of space within the chamber 10, which is undesirable from the perspective of structural efficiency. Therefore, the second electrode 330 may be formed with a thickness of 35 to 100 mm.

[0060] Meanwhile, within a range in which the second plate 330 has a set thickness, the length H1 of the first opening 333 and the length H2 of the second opening 335 may be adjusted. That is, the length H1 of the opening 333 and the length H2 of the second opening 335 may be adjusted to be different from each other or the same from each other.

[0061] For example, in order to increase the plasma density within a range in which second plate 330 has a set thickness, first opening 333 may be formed to have a length H1 greater than a length H2 of second opening 335. If second plate 330 is set to have a thickness of 35 to 100 mm and second opening 335 is set to have a length H2 of 25 mm, first opening 333 may be formed to have a length H1 greater than 25 mm and equal to or less than 75 mm in order to increase the plasma density.

[0062] Furthermore, within the range in which second plate 330 has a set thickness, in order to reduce the plasma density, first opening 333 may have length H1 smaller than length H2 of second opening 335, i.e., second opening 335 may have length H2 larger than length H1 of first opening 333. For example, if second plate 330 has a thickness of 35 to 100 mm and second opening 335 has length H2 of 25 mm, first opening 333 may have length H1 equal to or greater than 10 mm and smaller than 25 mm in order to reduce the plasma density.

[0063] On the other hand, it goes without saying that the length H1 of the first opening 333 and the length H2 of the second opening 335 may be formed to be the same length. In this way, by forming the length H1 of the first opening 333 and the length H2 of the second opening 335 to be different from each other or the same from each other, the plasma can be adjusted to the desired density.

[0064] A power supply 400 may be connected to the gas injector 300 to supply power to the gas injector for generating a plasma in the chamber 10. That is, the power supply 400 may supply RF power for generating a plasma in the chamber 10.

[0065] Here, the power supply device 400 may be connected to the second electrode 330 and supply RF power only to the second electrode 330, while the first electrode 330 is grounded. In this case, the first electrode and the second electrode 330 may be insulated by a second seal member 360 made of an insulating material. In this manner, when the power supply device 400 supplies RF power to the second electrode 330 and the first electrode 330 is grounded, the first electrode 330 and the second electrode 330 each form an electrode for generating capacitively coupled plasma (CCP). Alternatively, the substrate support pedestal 22 may also be grounded to generate capacitively coupled plasma between the second electrode 330 and the support pedestal 22. Alternatively, the power supply device 400 may supply power to both the first electrode 330 and the second electrode 330. In this case, the power supply device 400 may be configured to supply RF power to both the first electrode 330 and the second electrode 330.

[0066] By using the substrate processing apparatus of the present invention, a thin film can be deposited on a substrate S by chemical vapor deposition (CVD) or atomic layer deposition (ALD). The thin film deposited by chemical vapor deposition or atomic layer deposition may include at least one of an IZO thin film in which zinc oxide (ZnO) is doped with indium (In), a GZO thin film in which zinc oxide (ZnO) is doped with gallium (Ga), an IGZO thin film in which zinc oxide (ZnO) is doped with indium (In) and gallium (Ga), a thin film having a high dielectric constant (High-K), a silicon oxide (SiO2) thin film, and a silicon nitride (SiN) thin film.

[0067] First, when depositing a thin film on a substrate S by chemical vapor deposition, a source gas and a reactive gas may be simultaneously supplied onto the substrate S. In this case, the first gas may contain a source gas, and the second gas may contain a reactive gas. However, the present invention is not limited thereto. The first gas may contain a reactive gas, and the second gas may contain a source gas. Alternatively, at least one of the first gas and the second gas may contain a mixed gas of a source gas and a reactive gas. It goes without saying that at least one of the first gas and the second gas may be a purge gas. In this case, RF power may be supplied to the gas injection device 300 via the power supply device 400 to form plasma in the chamber 10, thereby improving deposition efficiency.

[0068] Meanwhile, when depositing a thin film on a substrate S by atomic layer deposition, a source gas and a reactive gas may be alternately supplied onto the substrate S. In this case, the first gas may contain a source gas and the second gas may contain a reactive gas, or the first gas may contain a reactive gas and the second gas may contain a source gas. It goes without saying that at least one of the first gas and the second gas may be a purge gas. In this case, the steps of supplying the source gas, supplying the purge gas, and supplying the reactive gas and the purge gas may form one process cycle, and this process cycle may be repeated multiple times to deposit a thin film on the substrate S. In this case, RF power may be supplied to the gas injection device 300 via the power supply device 400 to form plasma in the chamber 10. This is performed during the step of supplying the reactive gas, thereby improving deposition efficiency.

[0069] When depositing a thin film on the substrate S by chemical vapor deposition or atomic layer deposition, plasma can be generated between the first electrode and the second electrode 330 by supplying RF power to the gas injection device 300 via the power supply device 400, and plasma can also be generated inside the second electrode 330. In addition, high-density capacitively coupled plasma can also be generated between the second electrode 330 and the substrate support table 330.

[0070] Thus, according to the embodiment of the present invention, the spacing between the openings for injecting the process gas can be minimized to improve deposition uniformity, and a high density plasma can be formed, thereby forming a high quality thin film.

[0071] Although the preferred embodiments of the present invention have been described and illustrated using specific terms, these terms are merely for the purpose of clearly describing the present invention, and it is clear that various modifications and changes can be made to the embodiments of the present invention and the terms used without departing from the technical spirit and scope of the claims. These modified embodiments should not be understood separately from the spirit and scope of the present invention, but should be considered to belong to the scope of the claims of the present invention.

Claims

1. a first electrode having a first gas supply path and a second gas supply path provided separately, and a first gas supply port and a second gas supply port connected to the first gas supply path and the second gas supply path, respectively; a second electrode electrically insulated from the first electrode, spaced apart from the first electrode, and having a plurality of openings arranged so as to be alternately shifted from the first gas supply port and the second gas supply port; A gas injection device comprising:

2. 10. The gas injection device of claim 1, wherein the second electrode is spaced more than 3 mm and not more than 25 mm from the first electrode.

3. The opening is a first opening formed on the first electrode side; a second opening connected to the first opening and having a diameter larger than that of the first opening; The gas injection device of claim 1 , comprising:

4. The gas injection device of claim 3, wherein the first opening has a diameter of 1 to 3 mm.

5. The gas injection device of claim 3, wherein the diameter of the second opening is between 10 and 14 mm.

6. The opening is The gas injection device of claim 3 , further comprising a third opening between the first opening and the second opening and connecting the first opening and the second opening.

7. 7. The gas injection device of claim 6, wherein the third opening has a shape that increases in cross section as it progresses toward the second opening.

8. The gas injection device of claim 3, wherein the second opening has a length of 25 to 75 mm.

9. 2. The gas injection device of claim 1, wherein the second electrode has a thickness of 35 to 100 mm.

10. 2. The gas injection device of claim 1, wherein the openings are spaced apart at intervals of 12 to 20 mm.

11. The gas injection device of claim 3 , wherein the first and second openings have different lengths.

12. The gas injection device of claim 11 , wherein the length of the first opening is greater than the length of the second opening.

13. The gas injection device of claim 11 , wherein the length of the second opening is greater than the length of the first opening.

14. A chamber; a substrate support device disposed inside the chamber for supporting a substrate to be loaded into the chamber; a gas injector according to any one of claims 1 to 13, disposed within the chamber for injecting gas towards the substrate support; a power supply connected to the gas injection device for providing power to the gas injection device; A substrate processing apparatus comprising:

15. The substrate processing apparatus of claim 14 , wherein the power supply device is connected to the second electrode to supply power to the second electrode.

16. The substrate processing apparatus of claim 14 , wherein the power supply unit supplies power to the first electrode and the second electrode.

17. A thin film deposition method for depositing a thin film using the substrate processing apparatus according to claim 14, comprising: a first gas supplying passage through the first gas supplying passage and a second gas supplying passage through the second gas supplying passage to deposit a thin film on a substrate;

18. 20. The method of claim 17, further comprising generating a plasma between the first electrode and the second electrode, and generating a plasma within the second electrode to deposit a thin film on a substrate.

19. 20. The method of claim 17, further comprising generating a plasma between the second electrode and the substrate support device to deposit a thin film on the substrate.

20. 18. The method of claim 17, wherein at least one of the first gas and the second gas is supplied to deposit a thin film on a substrate by a chemical vapor deposition (CVD) method or an atomic layer deposition (ALD) method.

21. The thin films include IZO thin films in which zinc oxide (ZnO) is doped with indium (In), GZO thin films in which zinc oxide (ZnO) is doped with gallium (Ga), IGZO thin films in which zinc oxide (ZnO) is doped with indium (In) and gallium (Ga), high-K thin films, silicon oxide (SiO ２ ) thin film and silicon nitride (SiN) thin film.

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