Evaporation mask for OLED pixel deposition

Abstract

The deposition mask according to the embodiment includes a metal plate having a deposition region and a non-deposition region, the metal plate being defined by a first direction which is the longitudinal direction and a second direction which is the width direction, the deposition region including a plurality of effective regions and non-effective regions, the non-effective regions including first non-effective regions between the effective regions, a plurality of through holes arranged in the effective regions, at least one pattern arranged in the first non-effective region, and the pattern and the through hole being formed in different shapes.

Description

[Technical Field]

[0001] The examples relate to deposition masks for OLED pixel deposition. [Background technology]

[0002] Display devices are applied to a variety of devices. For example, the display devices are applied to small devices such as smartphones or tablet PCs. Alternatively, the display devices are applied to large devices such as televisions, monitors, or public displays (PDs). Recently, there has been an increasing demand for ultra-high resolution UHD (Ultra High Definition) with a resolution of 500 PPI (Pixels Per Inch) or more. As a result, display devices with high resolution are being applied to both small and large devices.

[0003] Display devices are classified into LCDs (Liquid Crystal Displays) and OLEDs (Organic Light Emitting Diodes) depending on their driving methods.

[0004] The LCD is a display device driven by liquid crystal, and the OLED is a display device driven by organic materials.

[0005] OLEDs can display an infinite contrast ratio, have a response speed about 1000 times faster than LCDs, and have a wide viewing angle, making them a promising display device that can replace LCDs.

[0006] The OLED includes a light-emitting layer. The light-emitting layer includes an organic material. The organic material is deposited on a substrate using a deposition mask. The deposition mask may include an open mask (OM) or a fine metal mask (FMM). A deposition pattern corresponding to the pattern formed on the deposition mask is formed on the substrate. As a result, the deposition pattern can function as a pixel.

[0007] The open mask is a thin plate that forms a deposition pattern only in specific locations when manufacturing an OLED. The open mask is used in the deposition process to form an emitting layer on a backplane after the backplane is completed during the display manufacturing process. That is, the open mask is a mask that does not have any hidden areas within the display operating range in order to deposit the front surface of the display. Therefore, the open mask is used when depositing an emitting layer with a single color emitting material.

[0008] On the other hand, a fine metal mask is used to change the color of a sub-pixel of an emitting layer. Therefore, the fine metal mask contains ultra-fine holes. The process using the fine metal mask requires a multi-step deposition process. Therefore, the process requires precise alignment. Therefore, the process using the fine metal mask is more difficult than the process using an open mask.

[0009] When the OLED light-emitting layer is deposited using an open mask, only one color light-emitting layer is formed. Therefore, a separate color filter (C / F) is required to realize various colors. On the other hand, when the fine metal mask is used, RGB light-emitting layers can be formed. Therefore, a separate color filter is not required. In other words, the technology using the fine metal mask is difficult. However, compared to the method using an open mask, light efficiency is good because a filter that blocks light is not required.

[0010] The fine metal mask is generally manufactured using an Invar alloy metal plate containing iron (Fe) and nickel (Ni). Through holes are formed on one side and the other side of the metal plate, penetrating the one side and the other side. The through holes are formed at positions corresponding to pixel patterns. This allows red, green, and blue organic materials to pass through the through holes in the metal plate and be deposited on the substrate. This allows pixel patterns to be formed on the substrate.

[0011] The fine metal mask includes a small-surface hole formed on one side of a metal plate and a large-surface hole formed on the other side of the metal plate, the small-surface hole and the large-surface hole being connected by a connecting portion, thereby forming the through hole.

[0012] The organic material is sprayed toward the fine metal mask, and is deposited on the deposition substrate through the large holes as an inlet and the small holes as an outlet.

[0013] Specifically, a plurality of strip-shaped fine metal masks are placed on the deposition substrate, and the organic matter moves through the large surface holes of the plurality of fine metal masks toward the small surface holes.

[0014] The fine metal mask is pulled in the longitudinal direction of the mask and connected to the frame, whereby the fine metal masks are fixed by the frame.

[0015] As a result, stress is generated in the fine metal mask due to the tension, and waviness may be formed on the surface of the fine metal mask due to the stress.

[0016] The spacing between the small-surface holes and the large-surface holes may change depending on the waviness, which may change the position of the organic material deposited by the fine metal mask, thereby reducing the deposition reliability of the fine metal mask.

[0017] Therefore, there is a need for a deposition mask with a new structure that can solve the above problems. Summary of the Invention [Problem to be solved by the invention]

[0018] The embodiments provide a deposition mask with improved deposition reliability. [Means for solving the problem]

[0019] The deposition mask according to the embodiment includes a metal plate having a deposition region and a non-deposition region, the metal plate being defined by a first direction which is the longitudinal direction and a second direction which is the width direction, the deposition region including a plurality of effective regions and non-effective regions, the non-effective regions including first non-effective regions between the effective regions, a plurality of through holes arranged in the effective regions, at least one pattern arranged in the first non-effective region, and the pattern and the through hole being formed in different shapes. [Effects of the Invention]

[0020] The reliability of the deposition mask according to the embodiment can be improved by the patterns arranged between the effective areas.

[0021] The deposition mask is fixed by a mask frame. At this time, the deposition mask is pulled in the longitudinal direction. As a result, tensile stress may remain inside the deposition mask after the deposition mask is fixed to the mask frame. The waviness of the surface of the deposition mask may increase due to the residual stress. As a result, the spacing between the effective areas of the deposition mask may change. Furthermore, the spacing between the through holes arranged in the effective areas may change.

[0022] The deposition mask may include a pattern disposed in the deposition area. Specifically, the pattern may be disposed between adjacent effective areas.

[0023] Residual stress in the deposition mask can be dispersed by the pattern, thereby reducing waviness of the deposition mask.

[0024] Therefore, variations in the spacing between the effective areas and the spacing between the through holes within the effective areas are minimized, and therefore the deposition mask has improved deposition reliability.

[0025] In addition, the pattern and the through holes are formed by different processes. As a result, the shape and size of the pattern can be varied. Therefore, the shape and size of the pattern can be varied depending on the magnitude of the tensile force applied to the deposition mask. Therefore, patterns of various shapes and sizes can be formed depending on the size and usage environment of the deposition mask. As a result, the deposition mask can have improved deposition reliability.

[0026] In addition, the difference in the width of the pattern may be small in the thickness direction of the metal plate. Therefore, the difference in the amount of metal removed from the first and second sides of the deposition mask may be reduced. This prevents the deposition mask from warping in one direction due to the difference in the amount of remaining metal between the first and second sides. [Brief explanation of the drawings]

[0027] [Figure 1] 10A and 10B are diagrams illustrating a bonding between an evaporation mask and a frame according to an embodiment. [Figure 2] 1 is a cross-sectional view of an organic vapor deposition apparatus including a vapor deposition mask according to an embodiment. [Figure 3] FIG. 10 is a diagram showing a deposition pattern formed on a deposition substrate by through holes in the deposition mask according to the example. [Figure 4] FIG. 2 is a plan view of an evaporation mask according to an embodiment. [Figure 5] FIG. 5 is a cross-sectional view taken along line AA' in FIG. [Figure 6] FIG. 5 is a cross-sectional view taken along line AA' in FIG. [Figure 7] FIG. 5 is a cross-sectional view taken along line AA' in FIG. [Figure 8] FIG. 10 is a plan view of an evaporation mask according to another embodiment. [Figure 9] FIG. 10 is a plan view of an evaporation mask according to another embodiment. [Figure 10] FIG. 10 is a plan view of an evaporation mask according to another embodiment. [Figure 11] FIG. 10 is a plan view of an evaporation mask according to another embodiment. [Figure 12] FIG. 10 is a plan view of an evaporation mask according to another embodiment. [Figure 13] FIG. 10 is a plan view of an evaporation mask according to another embodiment. [Figure 14] FIG. 10 is a plan view of an evaporation mask according to another embodiment. [Figure 15] FIG. 10 is a plan view of an evaporation mask according to another embodiment. [Figure 16] FIG. 10 is a plan view of an evaporation mask according to another embodiment. [Figure 17] FIG. 10 is a plan view of an evaporation mask according to another embodiment. [Figure 18] FIG. 10 is a plan view of an evaporation mask according to another embodiment. [Figure 19] FIG. 10 is a plan view of an evaporation mask according to another embodiment. [Figure 20] FIG. 10 is a plan view of an evaporation mask according to another embodiment. [Figure 21] FIG. 10 is a plan view of an evaporation mask according to another embodiment. [Figure 22] FIG. 10 is a plan view of an evaporation mask according to another embodiment. [Figure 23] FIG. 10 is a plan view of an evaporation mask according to another embodiment. MODE FOR CARRYING OUT THE INVENTION

[0028] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the technical concept of the present invention is not limited to some of the described embodiments, and may be embodied in various different forms, and one or more of the components of the embodiments may be selectively combined or substituted within the scope of the technical concept of the present invention. Furthermore, terms (including technical and scientific terms) used in the embodiments of the present invention may be interpreted as having meanings that are commonly understood by those skilled in the art to which the present invention pertains, unless otherwise clearly defined and described. Commonly used terms, such as predefined terms, may be interpreted in light of the context of the relevant art.

[0029] Furthermore, the terms used in the examples of the present invention are intended to describe the examples and do not limit the present invention. In this specification, unless otherwise specified in the phrase, the singular form can also include the plural form, and when described as "A and (and) at least one (or one or more) of B and C," it can include one or more of all combinations that can be combined with A, B, and C.

[0030] Furthermore, in describing the components of the present invention, terms such as first, second, A, B, (a), (b), etc. are used merely to distinguish the component from other components, and the term does not limit the essence, order, or sequence of the component.

[0031] Furthermore, when a component is described as being "coupled," "coupled," or "connected" to another component, it can include not only cases where the component is directly coupled, coupled, or connected to the other component, but also cases where the component is "coupled," "coupled," or "connected" by another component between the component and the other component.

[0032] Furthermore, when it is stated that a component is formed or positioned "above or below" each component, "above" or "below" includes not only the case where the two components are in direct contact with each other, but also the case where one or more other components are formed or positioned between the two components.

[0033] Furthermore, when expressed as "above" or "below," it can mean not only the upward direction but also the downward direction based on one component.

[0034] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, evaporation masks according to the embodiments will be described with reference to the drawings.

[0035] The deposition mask described below is a fine metal mask (FMM) that can form an RGB pixel pattern on a deposition substrate by depositing red, green, and blue organic materials on the deposition substrate. The following description does not apply to an open mask (OM).

[0036] In the following description, a first direction 1D is the longitudinal direction of the deposition mask, and a second direction 2D is the width direction of the deposition mask.

[0037] 1 to 3 are diagrams illustrating a process of depositing an organic substance on a deposition substrate 300 using the deposition mask 100 according to the embodiment.

[0038] 1 and 2, the organic vapor deposition apparatus includes a deposition mask 100, a mask frame 200, a deposition substrate 300, an organic vapor deposition container 400, and a vacuum chamber 500.

[0039] The deposition mask 100 contains a metal. For example, the deposition mask contains iron (Fe) and nickel (Ni). More specifically, the deposition mask contains an Invar alloy containing iron (Fe) and nickel (Ni).

[0040] The deposition mask 100 includes a plurality of through holes TH. The through holes are arranged in an effective area. The through holes are arranged to correspond to a pixel pattern to be formed on a deposition substrate. The deposition mask 100 includes a non-effective area other than the effective area including the deposition area.

[0041] That is, the deposition mask 100 includes a metal plate 10, and a plurality of through holes TH may be formed in the metal plate 10.

[0042] The mask frame 200 includes openings 205. The through-holes are disposed in regions corresponding to the openings 205. Thus, the organic material supplied to the organic material deposition container 400 is deposited on the deposition substrate 300. The deposition mask 100 is disposed on and fixed to the mask frame 200. For example, the deposition mask 100 is stretched with a certain tension. The deposition mask 100 is also welded and fixed to the mask frame 200.

[0043] For example, the non-effective area of ​​the deposition mask 100 is welded, so that the deposition mask 100 is fixed on the mask frame 200. Then, the portion of the mask frame 200 that protrudes outward is cut and removed.

[0044] The mask frame 200 comprises a highly rigid metal, which reduces deformation of the mask frame during the welding process.

[0045] The deposition substrate 300 is a substrate used when manufacturing a display device. For example, an OLED pixel pattern is formed on the deposition substrate 300. Red, green, and blue organic patterns are formed on the deposition substrate 300 to form pixels of the three primary colors of light. That is, an RGB pattern is formed on the deposition substrate 300.

[0046] The organic material deposition container 400 is a crucible. An organic material is placed inside the crucible. The organic material deposition container 400 moves within the vacuum chamber 500. That is, the organic material deposition container 400 moves in one direction within the vacuum chamber 500. For example, the organic material deposition container 400 moves in the width direction of the deposition mask 100 within the vacuum chamber 500.

[0047] A heat source and / or an electric current is supplied to the organic material deposition chamber 400, so that the organic material is deposited on the deposition substrate 300.

[0048] 3, the deposition mask 100 includes a metal plate 10. The metal plate includes a first surface 1S and a second surface 2S. The first surface 1S and the second surface 2S are opposite to each other.

[0049] The first surface 1S includes a small surface hole V1. The second surface 2S includes a large surface hole V2. For example, the first surface 1S and the second surface 2S are respectively formed with a plurality of small surface holes V1 and a plurality of large surface holes V2.

[0050] The deposition mask 100 also includes through holes TH. The through holes TH are formed by connecting portions CA that connect the boundaries of the small surface holes V1 and the large surface holes V2.

[0051] The width of the large-surface hole V2 is larger than the width of the small-surface hole V1. The width of the small-surface hole V1 is measured on a first surface 1S of the deposition mask 100. The width of the large-surface hole V2 is measured on a second surface 2S of the deposition mask 100.

[0052] In addition, the width of the connecting portion CA has a set size. Specifically, the width of the connecting portion CA may be 15 μm to 33 μm. More specifically, the width of the connecting portion CA may be 19 μm to 33 μm. Even more specifically, the width of the connecting portion CA may be 20 μm to 27 μm. If the width of the connecting portion CA exceeds 33 μm, it is difficult to achieve a resolution of 500 PPI or more. Also, if the width of the connecting portion CA is less than 15 μm, defects may occur during the deposition process.

[0053] The small facet holes V1 face the deposition substrate 300. The small facet holes V1 are disposed close to the deposition substrate 300. Therefore, the small facet holes V1 have a shape corresponding to the deposition pattern DP.

[0054] The large hole V2 faces the organic material deposition container 400. Therefore, the organic material supplied from the organic material deposition container 400 can be accommodated in a wide area by the large hole V2. Furthermore, a fine pattern can be quickly formed on the deposition substrate 300 through the small hole V1.

[0055] As a result, the organic material accommodated in the large-surface hole V2 is deposited on the deposition substrate 300 through the small-surface hole V1. As a result, one of red, green, and blue pixel patterns is formed on the deposition substrate 300. Then, the above process is repeated. As a result, all of red, green, and blue pixel patterns are formed on the deposition substrate 300.

[0056] As described above, the deposition mask is stretched in one direction to be fixed to the mask frame. Specifically, the deposition mask 100 may be stretched in a first direction.

[0057] As a result, tensile stress is formed inside the deposition mask 100. In addition, after the deposition mask 100 is fixed to the mask frame 200, stress remains inside the deposition mask 100. Waviness formed on the surface of the deposition mask 100 may increase due to the residual stress.

[0058] Therefore, the spacing between effective areas where the organic material moves may change. Alternatively, the spacing between the through holes arranged in the effective areas may change. As a result, when a deposition pattern is formed on a deposition substrate using the deposition mask, the spacing between the deposition patterns may change. Therefore, the deposition reliability of the deposition mask may be reduced.

[0059] An evaporation mask that can solve the above problems will be described below.

[0060] 4 is a plan view of an evaporation mask 100 according to an embodiment. FIGS. 5 to 7 are cross-sectional views taken along line AA' in FIG.

[0061] 4 to 7, the deposition mask 100 includes a deposition area DA and a non-deposition area NDA.

[0062] The deposition area DA is an area for forming a deposition pattern. The deposition area DA includes an effective area AA and a non-effective area UA. The effective area AA is an area where through-holes TH through which the organic material passes are formed. The non-effective area UA is an area where the through-holes TH are not formed.

[0063] Although the effective area AA is shown in the drawings as a square, the embodiment is not limited thereto, and the effective area AA may be rectangular.

[0064] The effective area AA may include a plurality of effective areas spaced apart from each other in the first direction.

[0065] The deposition area DA is an area from the start point of the first effective area to the end point of the last effective area in the first direction.

[0066] The non-valid area UA is an area other than the valid area AA, and may be divided into a first non-valid area UA1 and a second non-valid area UA2 depending on the position.

[0067] The first non-effective areas UA1 are areas between the effective areas AA. Thus, the first non-effective areas UA1 are spaced apart in the first direction 1D. The second non-effective areas UA2 are areas between the effective areas AA and the deposition mask 100. Alternatively, the second non-effective areas UA2 are areas between both ends of the metal plate in the second direction.

[0068] The non-deposition area NDA is an area that is not involved in deposition. The non-deposition area NDA may include a frame fixing area. The frame fixing area is an area for fixing the deposition mask 100 to the mask frame 200. The non-deposition area NDA may include at least one of a half-etched portion HF and an open portion OA. The half-etched portion HF may be formed by partially etching the metal plate 10. The open portion OA may be formed by completely etching the metal plate 10.

[0069] The half-etched portions HF can disperse stress generated when the deposition mask 100 is stretched, thereby reducing waviness of the deposition mask.

[0070] The open portion OA is an area where a jig such as a clamp is fixed when the deposition mask 100 is pulled.

[0071] A through hole TH may be arranged in the effective area AA. Specifically, the through hole TH includes the small surface hole V1, the large surface hole V2, and a connecting portion CA. The connecting portion CA connects the small surface hole V1 and the large surface hole V2.

[0072] The pattern P may be arranged in the non-valid area UA. More specifically, a plurality of patterns P may be arranged in the first non-valid area UA1. That is, the pattern P may be arranged between the valid areas AA. That is, the pattern P may be arranged between adjacent valid areas AA.

[0073] The pattern P distributes residual stress of the deposition mask 100. As a result, the stress of the deposition mask 100 can be alleviated. In particular, residual stress generated by tension on the deposition mask 100 can be transferred to the periphery of the pattern P. As a result, the residual stress of the deposition mask 100 can be distributed rather than being concentrated in one region. Therefore, the magnitude of waviness of the deposition mask 100 can be reduced by the pattern P.

[0074] This reduces variations in the spacing between the effective areas and / or variations in the spacing between the through holes arranged in the effective areas, i.e., reduces variations in the positions of the effective areas and the through holes.

[0075] Therefore, when a deposition pattern is formed on the deposition substrate using the deposition mask 100, the deposition pattern can be formed at a desired position on the deposition substrate 300. Therefore, the deposition mask according to the embodiment can have improved deposition reliability.

[0076] The pattern P and the through hole TH may be formed in different shapes. For example, the pattern P and the through hole TH may be formed in different widths. Furthermore, the pattern P and the through hole TH may have different inner surface shapes.

[0077] For example, the width of the through hole TH and the width of the pattern P may change while extending in the thickness direction of the metal plate 10. In this case, the change in the width of the through hole TH may be larger than the change in the width of the pattern P. In other words, the difference between the maximum and minimum widths of the through hole TH may be larger than the difference between the maximum and minimum widths of the pattern P.

[0078] For example, the first surface 1S and the second surface 2S of the metal plate 10 are etched to form the small surface hole V1 and the large surface hole V2, respectively. The through hole TH may be formed by a connecting portion CA that connects the small surface hole V1 and the large surface hole V2. For example, the through hole TH may be formed by etching the metal plate 10 using an etching solution.

[0079] This allows the inner side surface of the through hole TH to have a curvature, which allows the width of the through hole TH to change while extending in the direction from the first surface 1S to the second surface 2S.

[0080] The pattern P may be formed by etching the first surface 1S or the second surface 2S of the metal plate 10. For example, the pattern P may be formed using a laser. As an example, the pattern P may be formed by irradiating a laser from the direction of the first surface 1S or the second surface 2S.

[0081] 5, the pattern P may be formed by penetrating the first surface 1S and the second surface 2S. Specifically, the laser is irradiated from the direction of the first surface 1S or the second surface 2S to penetrate the metal plate 10. As a result, the pattern P may be formed in a hole shape. That is, the pattern P may be a hole formed in the deposition mask 100.

[0082] Since the pattern P is formed in the shape of holes, residual stress in the first surface 1S and the second surface 2S can be dispersed by the pattern P. This can reduce the size of waviness in the first surface 1S and the second surface 2S.

[0083] 6 and 7, the pattern P may be formed by partially removing the first surface 1S or the second surface 2S. In particular, the laser may be irradiated from the direction of the first surface 1S or the second surface 2S to partially remove the first surface 1S or the second surface 2S. As a result, the pattern P may be formed in a groove shape. That is, the pattern P may be a groove formed in the deposition mask 100.

[0084] Therefore, the inner surface of the pattern P may have a flat surface, so that the change in width of the pattern P may be small while extending in the direction from the first surface 1S to the second surface 2S.

[0085] Because the pattern P is formed in a groove shape, residual stress on the first surface 1S or the second surface 2S can be dispersed by the pattern P. Furthermore, it is possible to prevent the strength of the deposition mask from being reduced by the pattern P. Furthermore, when the pattern P is formed on the first surface 1S where the small facet hole V1 is formed, the difference in the amount of metal remaining on the first surface 1S and the second surface 2S can be reduced. Therefore, it is possible to prevent the deposition mask from warping in one direction.

[0086] The width W1 of the pattern P may have a set size. The width W1 of the pattern P may be different from the width W2 of the facet hole V1. For example, the width W1 of the pattern P may be smaller than the width W2 of the facet hole V1.

[0087] Alternatively, the width W1 of the pattern P may be different from the width W3 of the large hole V2. For example, the width W1 of the pattern P may be smaller than the width W3 of the large hole V2.

[0088] Here, the width W1 of the pattern P means the maximum width of the pattern P. The width W2 of the small hole V1 means the maximum width of the small hole V1. The width W3 of the large hole V2 means the maximum width of the large hole V2.

[0089] Alternatively, the width W1 of the pattern P may be different from the first distance D1 in the first direction between the pattern P and the facet hole V1. For example, the width W1 of the pattern P may be smaller than the first distance D1.

[0090] Alternatively, the width W1 of the pattern P may be different from the second distance D2 in the first direction between the pattern P and the large surface hole V2. For example, the width W1 of the pattern P may be smaller than the second distance D2.

[0091] For example, the width W1 of the pattern P may be 0.005 mm to 20 mm, and the inclination angle of the inner surface of the pattern P may be 60° or more.

[0092] Since the pattern P has the width set as described above, the deposition reliability of the deposition mask may be improved. In particular, if the width of the pattern P is large, the distance between the pattern P and the effective area AA may become very small due to process errors. Alternatively, the pattern P may be partially formed within the effective area AA.

[0093] As a result, the organic material may migrate through the pattern P. This may result in a deterioration in the quality of the deposition pattern. Therefore, in the deposition mask according to the embodiment, the width of the pattern is set as described above, thereby improving the deposition reliability of the deposition mask.

[0094] The deposition mask according to the embodiment has improved deposition reliability due to the pattern.

[0095] The deposition mask is fixed by a mask frame. At this time, the deposition mask is pulled in the longitudinal direction. As a result, tensile stress may remain inside the deposition mask after the deposition mask is fixed to the mask frame. The waviness of the surface of the deposition mask may increase due to the residual stress. As a result, the spacing between the effective areas of the deposition mask may change. Furthermore, the spacing between the through holes arranged in the effective areas may change.

[0096] The deposition mask may include a pattern disposed in the deposition area. Specifically, the pattern may be disposed between adjacent effective areas.

[0097] Residual stress in the deposition mask can be dispersed by the pattern, thereby reducing waviness of the deposition mask.

[0098] Therefore, variations in the spacing between the effective areas and the spacing between the through holes within the effective areas are minimized, thereby improving deposition reliability of the deposition mask.

[0099] In addition, the pattern and the through holes are formed by different processes. As a result, the shape and size of the pattern can be varied. Therefore, the shape and size of the pattern can be varied depending on the magnitude of the tensile force applied to the deposition mask. Therefore, patterns of various shapes and sizes can be formed depending on the size and usage environment of the deposition mask. As a result, the deposition mask can have improved deposition reliability.

[0100] In addition, the difference in the width of the pattern may be small in the thickness direction of the metal plate. Therefore, the difference in the amount of metal removed from the first and second sides of the deposition mask may be reduced. This prevents the deposition mask from warping in one direction due to the difference in the amount of metal remaining on the first and second sides.

[0101] Various arrangements and shapes of patterns of deposition masks according to other embodiments will be described below with reference to Figs. 8 to 20. In the description of deposition masks according to other embodiments, descriptions of the same or similar parts to the deposition masks according to the above-described embodiments will be omitted. Note that the same reference numerals will be used to designate the same components.

[0102] Referring to Fig. 8, the deposition mask 100 may include a plurality of pattern portions. For example, the deposition mask 100 may include a first pattern portion PA1 and a second pattern portion PA2. Fig. 8 shows only the first pattern portion PA1 and the second pattern portion PA2 for convenience of explanation. However, the embodiment is not limited thereto. The deposition mask may include three or more pattern portions.

[0103] The first pattern portion PA1 may include a plurality of first patterns P1. The plurality of first patterns P1 may be spaced apart in the second direction 2D. The second pattern portion PA2 may include a plurality of second patterns P2. The plurality of second patterns P2 may be spaced apart in the second direction 2D.

[0104] The first pattern portion PA1 and the second pattern portion PA2 may be spaced apart from each other in the first direction 1D.

[0105] The deposition mask 100 according to another embodiment includes the first pattern portion PA1 and the second pattern portion PA2. Therefore, patterns can be formed at various positions in the first non-effective area UA1. Therefore, the deposition mask has reduced waviness. Therefore, the deposition reliability of the deposition mask can be improved.

[0106] 9 and 10, the deposition mask 100 may include a plurality of pattern portions. For example, the deposition mask 100 may include a first pattern portion PA1, a second pattern portion PA2, and a third pattern portion PA3. For convenience of explanation, only the first pattern portion PA1, the second pattern portion PA2, and the third pattern portion PA3 are shown in FIGS. 9 and 10. However, the embodiment is not limited thereto. The deposition mask 100 may include four or more pattern portions.

[0107] The first pattern portion PA1 may include a plurality of first patterns P1. The plurality of first patterns P1 may be spaced apart in the second direction 2D. The second pattern portion PA2 may include a plurality of second patterns P2. The plurality of second patterns P2 may be spaced apart in the second direction 2D. The third pattern portion PA3 may include a plurality of third patterns P3. The plurality of third patterns P3 may be spaced apart in the second direction 2D.

[0108] The first pattern portion PA1, the second pattern portion PA2, and the third pattern portion PA3 may be spaced apart in the first direction 1D.

[0109] 9, the first pattern portion PA1, the second pattern portion PA2, and the third pattern portion PA3 may be arranged in a zigzag pattern. That is, the second pattern P2 is arranged between adjacent first patterns P1. Also, the third pattern P3 is arranged between adjacent second patterns P2.

[0110] 10, the patterns of the first pattern portion PA1, the second pattern portion PA2, and the third pattern portion PA3 may be arranged in the first direction 1D. That is, the patterns of the first pattern portion PA1, the second pattern portion PA2, and the third pattern portion PA3 may face each other in the first direction 1D.

[0111] In addition, the deposition mask 100 may include half-etched portions HF disposed in the non-deposition areas NDA. The half-etched portions HF may be formed by partially removing the first surface 1S of the metal plate 10. That is, the half-etched portions HF may be grooves formed in the first surface 1S.

[0112] The half-etched portion HF can distribute stress in the non-deposition area NDA, thereby reducing waviness in the non-deposition area NDA, and thus preventing a gap from being formed between the deposition mask and the deposition substrate when depositing an organic material on the deposition substrate using the deposition mask 100.

[0113] This prevents an increase in the distance between the small facet hole V1 and the deposition substrate 300. Therefore, it is possible to prevent a decrease in deposition quality due to a shadow effect.

[0114] The number of patterns in the first pattern portion PA1, the second pattern portion PA2, and the third pattern portion PA3 may be different. Specifically, the number of patterns in the first pattern P1, the second pattern P2, and the third pattern P3 may be different. More specifically, the number of first patterns P1 may be greater than the number of second patterns P2 and the third patterns P3. Furthermore, the number of second patterns P2 may be greater than the number of third patterns P3.

[0115] As a result, the number of patterns extending from the effective area AA toward the center C of the first non-effective area UA1 can be reduced, i.e., the area of ​​the opening region due to the patterns extending from the effective area AA toward the center C of the first non-effective area UA1 can be reduced.

[0116] Therefore, the number of patterns and the area of ​​the opening region can be reduced as the first non-effective area UA1 extends from the outside to the inside in the first direction 1D, and the number of patterns and the area of ​​the opening region can be increased as the first non-effective area UA1 extends from the outside to the inside in the second direction 2D.

[0117] In the deposition mask according to another embodiment, the number of patterns and the area of ​​the opening region are reduced as the pattern extends from the outside to the inside of the first non-effective region UA1 in the first direction 1D. This improves the stress dispersion effect in the region adjacent to the effective region. This reduces the waviness in the region adjacent to the effective region. This reduces the positional variation of the through holes.

[0118] In addition, in the deposition mask according to another embodiment, the number of patterns and the area of ​​the opening region of the first non-effective area UA1 increase as the first non-effective area UA1 extends from the outside to the inside in the second direction 2D, so that the residual stresses in the outer and central portions of the deposition mask in the second direction 2D can be made similar.

[0119] 11 and 12, the deposition mask 100 may include a plurality of pattern portions. For example, the deposition mask 100 may include a first pattern portion PA1, a second pattern portion PA2, and a third pattern portion PA3. For convenience of explanation, only the first pattern portion PA1, the second pattern portion PA2, and the third pattern portion PA3 are shown in FIGS. 11 and 12. However, the embodiment is not limited thereto. The deposition mask may include four or more pattern portions.

[0120] The first pattern portion PA1 may include a plurality of first patterns P1. The plurality of first patterns P1 may be spaced apart in the second direction 2D. The second pattern portion PA2 may include a plurality of second patterns P2. The plurality of second patterns P2 may be spaced apart in the second direction 2D. The third pattern portion PA3 may include a plurality of third patterns P3. The plurality of third patterns P3 may be spaced apart in the second direction 2D.

[0121] The first pattern portion PA1, the second pattern portion PA2, and the third pattern portion PA3 may be spaced apart in the first direction 1D.

[0122] 11, the first pattern portion PA1, the second pattern portion PA2, and the third pattern portion PA3 are arranged in a zigzag pattern. That is, the second pattern P2 is arranged between adjacent first patterns P1. Also, the third pattern P3 is arranged between adjacent second patterns P2.

[0123] 12, the patterns of the first pattern portion PA1, the second pattern portion PA2, and the third pattern portion PA3 may be arranged in the first direction 1D, i.e., the patterns of the first pattern portion PA1, the second pattern portion PA2, and the third pattern portion PA3 may face each other in the first direction 1D.

[0124] The number of patterns in the first pattern portion PA1, the second pattern portion PA2, and the third pattern portion PA3 may be different. Specifically, the number of patterns in the first pattern P1, the second pattern P2, and the third pattern P3 may be different. More specifically, the number of first patterns P1 may be smaller than the number of second patterns P2 and the third patterns P3. Furthermore, the number of second patterns P2 may be smaller than the number of third patterns P3.

[0125] As a result, the number of patterns can be increased as they extend from the effective area AA toward the center C of the first non-effective area UA1, i.e., the area of ​​the opening region due to the patterns can be increased as they extend from the effective area AA toward the center C of the first non-effective area UA1.

[0126] Therefore, the number of patterns and the area of ​​the opening area can be increased as the first non-effective area UA1 extends from the outside to the inside in the first direction 1D. Also, the number of patterns and the area of ​​the opening area can be increased as the first non-effective area UA1 extends from the outside to the inside in the second direction 2D.

[0127] In the deposition mask according to another embodiment, the number of patterns and the area of ​​the opening region increase as the first non-effective region UA1 extends from the outside to the inside in the first direction 1D. This enhances the stress distribution effect at the center of the first non-effective region UA1. This reduces the waviness of the first non-effective region UA1. This reduces the variation in the spacing between the effective regions.

[0128] In addition, in the deposition mask according to another embodiment, the number of patterns and the area of ​​the opening region increase as the first non-effective area UA1 extends from the outside to the inside in the second direction 2D, so that the residual stresses at the outer and central portions of the deposition mask in the second direction 2D can be made similar.

[0129] 13 and 14, the deposition mask 100 may include a plurality of pattern portions. For example, the deposition mask 100 may include a first pattern portion PA1, a second pattern portion PA2, and a third pattern portion PA3. For convenience of explanation, only the first pattern portion PA1, the second pattern portion PA2, and the third pattern portion PA3 are shown in FIGS. 13 and 14. However, the embodiment is not limited thereto. The deposition mask may include four or more pattern portions.

[0130] The first pattern portion PA1 may include a plurality of first patterns P1. The plurality of first patterns P1 may be spaced apart in the second direction 2D. The second pattern portion PA2 may include a plurality of second patterns P2. The plurality of second patterns P2 may be spaced apart in the second direction 2D. The third pattern portion PA3 may include a plurality of third patterns P3. The plurality of third patterns P3 may be spaced apart in the second direction 2D.

[0131] The first pattern portion PA1, the second pattern portion PA2, and the third pattern portion PA3 may be spaced apart in the first direction 1D.

[0132] At least one of the effective areas AA may have two non-effective areas defined at both ends in the first direction 1D. The number of pattern portions and the number of patterns in the areas adjacent to the effective area at the center of the two non-effective areas may be different. That is, the areas of the opening areas located at both ends of the effective area AA in the first direction 1D may be different.

[0133] 13, the first pattern portion PA1, the second pattern portion PA2, and the third pattern portion PA3 may be arranged in an area adjacent to a first end E1 of the effective area AA, and only the first pattern portion PA1 may be arranged in an area adjacent to a second end E2 of the effective area AA.

[0134] 14, the first pattern portion PA1 and the second pattern portion PA2 may be arranged in an area adjacent to a first end E1 of the effective area AA, and the pattern portions may not be arranged in an area adjacent to a second end E2 of the effective area AA.

[0135] The area adjacent to the edge of the effective area AA is the area between the effective area AA and the center of the first non-effective area UA1.

[0136] Therefore, the number of patterns arranged in the area adjacent to the first end E1 of the effective area AA may be different from the number of patterns arranged in the area adjacent to the second end E2 of the effective area AA. That is, the area of ​​the opening arranged in the area adjacent to the first end E1 of the effective area AA may be different from the area of ​​the opening arranged in the area adjacent to the second end E2 of the effective area AA.

[0137] Furthermore, the number of patterns or the area of ​​the opening regions arranged in the first non-effective regions UA1 may be different from each other.

[0138] 13 and 14, the first non-valid area UA1 may include a first non-valid area UA1-1 and a first non-valid area UA1-2 spaced apart in the first direction. That is, the valid area AA may be disposed between the first non-valid area UA1-1 and the first non-valid area UA1-2. In particular, one valid area may be disposed between the first non-valid area UA1-1 and the first non-valid area UA1-2.

[0139] The number of patterns arranged in the 1-1 non-effective area UA1-1 and the number of patterns arranged in the 1-2 non-effective area UA1-2 may be different. For example, the number of patterns arranged in the 1-1 non-effective area UA1-1 may be greater than the number of patterns arranged in the 1-2 non-effective area UA1-2. That is, the area of ​​the opening region of the 1-1 non-effective area UA1-1 may be greater than the area of ​​the opening region arranged in the 1-2 non-effective area UA1-2.

[0140] In deposition masks according to other embodiments, the number of patterns arranged in the regions adjacent to both ends of the effective region and the area of ​​the opening region may be different, or the number of patterns arranged in each first non-effective region and the area of ​​the opening region may be different.

[0141] The metal plate has through holes, patterns, and openings formed therein. Before forming the through holes, patterns, and openings in the metal plate, a rolling process may be performed, thereby allowing the metal plate to be formed to a predetermined thickness.

[0142] Stress is generated inside the metal plate during the rolling process, and waviness may be formed on the surface of the metal plate due to the stress.

[0143] Therefore, before forming the through holes, patterns, and openings in the metal plate, the waviness distribution of the metal plate is measured, and then the number of patterns formed in the areas with high waviness and the areas with low waviness can be made different.

[0144] For example, a large number of patterns are formed in an area where waviness is large, and a small number of patterns are formed in an area where waviness is small, thereby reducing waviness due to tensile stress generated when the deposition mask is stretched.

[0145] That is, a large number of patterns are formed in areas with large waviness, and a small number of patterns are formed in areas with small waviness. This relatively reduces the area of ​​the opening region in the area with small waviness, thereby dispersing tensile stress. This prevents further increase in waviness due to the raw material characteristics of the metal plate after the deposition mask is fixed to the mask frame.

[0146] Referring to FIGS. 15 and 16, the shape of the effective area AA may be different.

[0147] In particular, the width of the effective area AA may vary while extending in one direction, and in particular, the width of at least one effective area among the plurality of effective areas may vary.

[0148] For example, referring to FIG. 15, the width of the effective area AA may vary while extending in the first direction 1D.

[0149] Alternatively, referring to FIG. 16, the width of the effective area AA may vary while extending in the second direction 2D.

[0150] That is, the effective area AA of the deposition mask 100 can be formed in various shapes, so that the pattern to be deposited on the deposition substrate 300 can be formed in various designs.

[0151] The deposition mask 100 may include a plurality of patterns P. The number of the patterns P may vary with distance from one end of the effective area AA.

[0152] 15, the width of the effective area AA narrows as it extends from the first-2 end E1-2 toward the first-1 end E1-1, and the number of patterns P decreases as it extends from the first-2 end E1-2 toward the first-1 end E1-1.

[0153] 16, the width of the effective area AA narrows as it extends from the second-second end E2-2 toward the first-second end E1-2, and the number of patterns P increases as it extends from the second-second end E2-2 toward the first-second end E1-2.

[0154] As a result, the deposition mask according to another embodiment can arrange the patterns in various ways depending on the shape of the effective area AA. Therefore, even if the shape of the effective area AA changes, the patterns can effectively distribute residual stress. Therefore, waviness of the deposition mask can be reduced. Therefore, the deposition reliability of the deposition mask can be improved.

[0155] 17 to 20, a deposition mask 100 according to another embodiment may include a plurality of pattern portions. For example, the deposition mask 100 may include a first pattern portion PA1, a second pattern portion PA2, and a third pattern portion PA3. For convenience of explanation, only the first pattern portion PA1, the second pattern portion PA2, and the third pattern portion PA3 are shown in FIGS. 17 to 20. However, the embodiment is not limited thereto. The deposition mask may include four or more pattern portions.

[0156] The first pattern portion PA1 may include a plurality of first patterns P1. The plurality of first patterns P1 may be spaced apart in the second direction 2D. The second pattern portion PA2 may include a plurality of second patterns P2. The plurality of second patterns P2 may be spaced apart in the second direction 2D. The third pattern portion PA3 may include a plurality of third patterns P3. The plurality of third patterns P3 may be spaced apart in the second direction 2D.

[0157] The first pattern portion PA1, the second pattern portion PA2, and the third pattern portion PA3 may be spaced apart in the first direction 1D.

[0158] The size of the pattern may vary along one direction, specifically, the size of the pattern may vary along the first direction 1D.

[0159] 17, the first pattern portion PA1, the second pattern portion PA2, and the third pattern portion PA3 may have different pattern sizes. Specifically, the size of the first pattern P1 may be larger than the sizes of the second pattern P2 and the third pattern P3. Furthermore, the size of the second pattern P2 may be larger than the size of the third pattern P3.

[0160] That is, the size of the pattern may decrease as it extends from the edge of the effective area toward the center C of the first non-effective area UA1.

[0161] 18, the size of the first pattern P1 may be smaller than the sizes of the second pattern P2 and the third pattern P3. Also, the size of the second pattern P2 may be smaller than the size of the third pattern P3.

[0162] That is, the size of the pattern may increase as it extends from the edge of the effective area toward the center C of the first non-effective area UA1.

[0163] Alternatively, the spacing between the patterns may vary along one direction, particularly along the first direction 1D.

[0164] Referring to FIG. 19, a distance G1 between the first pattern P1 and the second pattern P2 may be smaller than a distance G2 between the second pattern P2 and the third pattern P3.

[0165] That is, the spacing between the patterns may increase as they extend from the edge of the effective area toward the center C of the first non-effective area UA1.

[0166] Alternatively, referring to FIG. 20, the distance G1 between the first pattern P1 and the second pattern P2 may be greater than the distance G2 between the second pattern P2 and the third pattern P3.

[0167] That is, the intervals between the patterns may decrease as they extend from the edge of the effective area toward the center C of the first non-effective area UA1.

[0168] Although not shown in the drawings, the patterns may vary in both size and spacing while extending in the first direction 1D.

[0169] Deposition masks according to other embodiments may have various pattern sizes and intervals.

[0170] This allows many patterns to be formed in the area adjacent to the effective area, or many patterns to be formed in the area far from the effective area.

[0171] The metal plate may have different physical properties depending on the manufacturing process or the properties of the raw material, which may cause residual stress to be concentrated in the central or outer region of the deposition mask.

[0172] Therefore, the size and spacing of the patterns can be varied, and the position of the patterns can be controlled according to the physical properties of the metal plate. Therefore, tensile stress due to tension on the deposition mask can be effectively dispersed. Therefore, waviness of the deposition mask can be reduced. As a result, the deposition mask can have improved deposition reliability.

[0173] Referring to FIGS. 21 and 22, the pattern portion may be formed in an area other than the effective area AA.

[0174] 21, the pattern P may be formed in the non-deposition area NDA, so that the pattern P may be formed between the open area OA and the effective area AA.

[0175] This allows the residual stress to be effectively dispersed in the non-deposition area NDA, and also eliminates the need for a process of forming a separate half-etched portion in the non-deposition area NDA.

[0176] 22, the pattern P may be formed in the second non-effective area UA2, that is, between the effective area AA and an end of the deposition mask 100 in the second direction.

[0177] As a result, the pattern P can also be formed in the area outside the deposition area DA.

[0178] This allows the residual stress to be effectively dispersed in the outer region of the deposition area NDA, and also prevents the distance between the small facet hole V1 and the deposition substrate 300 from increasing, thereby preventing a deterioration in deposition quality due to a shadow effect.

[0179] Although not shown in the drawings, the pattern P may be formed in both the non-deposition area NDA and the second non-effective area UA2.

[0180] Referring to FIG. 23, a pattern P can be formed between the effective areas.

[0181] The area of ​​the pattern P may be smaller than the area of ​​the first non-effective area UA1. Specifically, the area of ​​the pattern P may be 90% or less, 80% or less, 70% or less, or 60% or less of the area of ​​the first non-effective area UA1. For example, the area of ​​the pattern P may be 50% to 90% of the area of ​​the first non-effective area UA1.

[0182] If the area of ​​the pattern P exceeds 90% of the area of ​​the first non-effective area UA1, a part of the pattern P may be disposed inside the effective area AA due to a process error, which may reduce the deposition reliability of the deposition mask.

[0183] Furthermore, if the area of ​​the pattern P is less than 50% of the area of ​​the first non-effective area UA1, the residual stress may not be effectively dispersed between the effective areas by the pattern P. This may increase waviness of the deposition mask, thereby reducing the deposition reliability of the deposition mask.

[0184] The features, structures, effects, etc. described in the above-described embodiments are included in at least one embodiment of the present invention and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, etc. exemplified in each embodiment can be combined or modified in other embodiments by a person skilled in the art to which the embodiment belongs. Therefore, content related to such combinations and modifications should be interpreted as being included within the scope of the present invention.

[0185] Furthermore, while the above description has focused on the embodiments, these are merely examples and are not intended to limit the present invention. Those skilled in the art will recognize that various modifications and applications not exemplified above are possible within the scope of the essential characteristics of the present invention. For example, each component specifically illustrated in the embodiments can be modified and implemented. Differences related to such modifications and applications should be construed as being included within the scope of the present invention as defined by the appended claims.

Claims

1. a metal plate including a vapor-deposited area and a non-vapor-deposited area; The metal plate has a first direction, which is a longitudinal direction, and a second direction, which is a width direction, defined therein; the deposition area includes a plurality of effective areas and non-effective areas; the non-effective area includes a first non-effective area between the effective areas, A plurality of through holes are arranged in the effective area, At least one pattern is arranged in the first non-effective area, The pattern and the through-hole are formed in different shapes from each other.

2. the first non-effective area includes a first pattern portion including a plurality of first patterns and a second pattern portion including a plurality of second patterns; The deposition mask of claim 1 , wherein the first pattern portion and the second pattern portion are spaced apart from each other in the first direction.

3. the first non-effective area includes a first pattern portion including a plurality of first patterns, a second pattern portion including a plurality of second patterns, and a third pattern portion including a plurality of third patterns; the first pattern portion, the second pattern portion, and the third pattern portion are spaced apart in the first direction, The evaporation mask according to claim 1 , wherein the first pattern portion, the second pattern portion, and the third pattern portion have different numbers of patterns.

4. the number of patterns decreases as the first non-effective area extends from the outside to the inside in the first direction; The deposition mask according to claim 3 , wherein the number of patterns increases as the patterns extend from the outside to the inside of the first non-effective area in the second direction.

5. the number of patterns increases while extending from the outside to the inside of the first non-effective area in the first direction, The deposition mask according to claim 3 , wherein the number of patterns increases as the patterns extend from the outside to the inside of the first non-effective area in the second direction.

6. The deposition mask according to claim 1 , wherein the numbers of patterns arranged at both ends of the effective area in the first direction are different.

7. the first non-effective area includes a first-1 non-effective area and a first-2 non-effective area spaced apart in the first direction with one effective area interposed therebetween, 2. The evaporation mask according to claim 1, wherein the number of patterns arranged in the 1-1 non-effective region is different from the number of patterns arranged in the 1-2 non-effective region.

8. The deposition mask according to claim 1 , wherein at least one of the plurality of effective areas has a width that varies while extending in the first direction or the second direction.

9. the first non-effective area includes a first pattern portion including a plurality of first patterns, a second pattern portion including a plurality of second patterns, and a third pattern portion including a plurality of third patterns; the first pattern portion, the second pattern portion, and the third pattern portion are spaced apart in the first direction, The evaporation mask according to claim 1 , wherein the first pattern, the second pattern, and the third pattern have different sizes.

10. The deposition mask of claim 9 , wherein a size of the pattern decreases or increases as it extends from an edge of the effective area toward a center of the first non-effective area.

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