Modular Vapor Delivery System for Semiconductor Process Tools
The modular vapor delivery system addresses complexity and cost issues in semiconductor tools by using a vaporizer module to maintain precursor ratios and prevent condensation, enhancing efficiency and precision in vapor delivery.
Patent Information
- Application Number
- JP2025508657
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2022-08-30
- Filing Date
- 2023-08-21
- Publication Date
- 2025-09-09
AI Technical Summary
Existing vapor delivery systems for semiconductor process tools are complex and costly, requiring separate channels for individual precursor vapors and extensive heating to prevent condensation, while lacking efficiency in maintaining precursor ratios during delivery.
A modular vapor delivery system with a vaporizer module as the final stage, coupled with a flow control component module, which vaporizes a liquid precursor mixture and maintains precursor ratios through heated conduits, simplifying design and reducing condensation risks.
The system efficiently delivers precursor vapors with maintained ratios, reducing complexity and cost by limiting heating to the vapor supply line, ensuring precise precursor delivery to the process chamber.
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Figure 2025529790000001_ABST
Abstract
Description
[Technical Field]
[0001] Priority claim: This application claims priority to U.S. Provisional Patent Application No. 63 / 373,982, filed August 30, 2022, entitled "MODULAR VAPOR DELIVERY SYSTEM FOR SEMICONDUCTOR PROCESS TOOLS," the entirety of which is incorporated by reference. [Background technology]
[0002] Process tools are used to perform processes such as film deposition and etching on semiconductor wafer substrates. These process tools may include vacuum chambers capable of performing chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes. Precision deposition processes, such as ALD, use a gas distribution showerhead within the vacuum chamber to precisely deliver precursor gases and vapors (collectively, process gases) into the vacuum chamber. These processes employ process gases that include an inert carrier gas and one or more vaporized precursors. Process gases can be formed by vaporizing one or more liquid precursors and then mixing the vapors with a carrier gas. In many processes, multiple precursor species can be delivered to the process chamber in specific concentration ratios. Traditionally, individual precursor vapors are processed in separate channels within a vapor delivery system before entering the process chamber, where the individual gases can be mixed and distributed, for example, through a gas distribution showerhead.
[0003] Precursor vapors are typically generated by heating liquid or solid precursors. Vaporization temperatures can exceed 100°C. Care must generally be taken to avoid cold spots along the gas flow paths within the block and between the block and the showerhead. Once formed, the precursor vapor may flow along multiple flow paths that are heated to maintain the precursor in a vapor state. The process gas stream may pass through a system of flow components, such as filters, mixing chambers, and flow control valves. These flow components are typically heated to account for the possibility of precursor vapor condensation. To increase efficiency and reduce costs, a single flow path carrying multiple precursor species may be desired. Therefore, a compact, configurable, modular vapor delivery system may be desired to handle more than one type of process precursor vapor and perform all the functions of more complex conventional vapor delivery systems. [Brief explanation of the drawings]
[0004] The materials described herein are shown by way of example, and not by way of limitation, in the accompanying drawings. For simplicity and clarity of illustration, elements shown in the figures are not necessarily drawn to scale or in precise locations. For example, for clarity, the dimensions of some elements may be exaggerated relative to other elements. Also, for clarity of discussion, various physical features may be depicted in simplified, "idealized" forms and geometries, with the understanding that practical implementations may only approximate the illustrated ideals. For example, smooth surfaces and right-angle intersections may be depicted, ignoring the finite roughness, rounded corners, and imperfect angle intersection characteristics of structures formed by nanofabrication techniques. Furthermore, where considered appropriate, reference labels have been repeated among the figures to indicate corresponding or similar elements.
[0005] [Figure 1] FIG. 1 illustrates a block diagram of a modular vapor delivery system including a flow control component module and a vaporizer module in accordance with at least one embodiment of the present disclosure.
[0006] [Figure 2] FIG. 2 illustrates a block diagram of the modular vapor delivery system of FIG. 1 with a chemical ampoule interconnected to a flow control component module, in accordance with at least one embodiment of the present disclosure.
[0007] [Figure 3] FIG. 3 illustrates a block diagram of the modular vapor delivery system of FIG. 1 supplied by an external chemical storage and delivery unit, according to at least one embodiment of the present disclosure.
[0008] [Figure 4] FIG. 4 illustrates a block diagram for a system including a modular steam supply system in accordance with at least one embodiment of the present disclosure.
[0009] [Figure 5] FIG. 5 shows a process flow diagram illustrating an exemplary method of operating a modular steam supply system in accordance with at least one embodiment of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION
[0010] Disclosed herein is a modular vapor delivery system. The modular vapor delivery system includes heated conduits for transporting multiple precursor vapors to a process chamber of a semiconductor processing tool. The modular vapor delivery system may include a flow control component module coupled to a vaporizer module. The vaporizer module may be operable to vaporize a liquid stream including a mixture of one or more precursors. In at least one embodiment, mixing of multiple single-component precursor streams may occur within the flow control component module. In at least one embodiment, the precursor mixture is supplied by an external chemical storage and delivery unit that is physically separated from the modular vapor delivery system. In at least one embodiment, a chemical ampoule is configured to contain a single-component precursor liquid or a multi-component precursor liquid. The chemical ampoule may be a module on the modular vapor delivery system.
[0011] The modules of the modular vapor delivery system may be mounted on a substrate or platform. In at least one embodiment, a cabinet enclosure may house the modular vapor delivery system. A liquid supply line from the chemical storage and distribution unit may run through an exhaust duct that is coupled to the enclosure housing the modular vapor delivery system. The precursor mixture may be delivered as a liquid stream (e.g., under pressure) from a chemical storage and delivery unit (e.g., external to the modular vapor delivery system) or a chemical ampoule to a flow control component module. From the flow control component module, the liquid stream may be delivered to a vaporizer module. The liquid stream is vaporized in the vaporizer module, and the resulting vapor may contain vapors of the individual precursor species in the same proportions as they were in their liquid state.
[0012] In at least one embodiment, the vaporizer module is the final stage of a modular vapor delivery system. Such a configuration may allow the vaporizer module to be directly coupled to a process chamber of a semiconductor processing tool, for example, by a heated delivery conduit that prevents condensation of precursor vapors within the heated vapor delivery line. Thus, the abundance ratio (e.g., molar ratio, mass or volume concentration ratio) of the precursor vapors may be maintained during passage to a distribution point within the process chamber, such as a gas distribution showerhead.
[0013] In at least one embodiment, the vaporizer module may provide sufficient heat and temperature control as a self-contained device for vaporizing a multi-component liquid stream. In at least one embodiment, the vaporizer module is the final stage of a modular vapor supply system. Employing a vaporizer module as the final stage may significantly simplify the design of the modular vapor supply system. For example, heating of vapor processing components may typically require heating elements such as cartridge heaters, temperature sensors, and temperature controllers, as well as a complex system of insulation for gas supply lines. Such complex designs for temperature control are largely eliminated by the modular vapor supply system of the present disclosure. Vapor may be introduced into the process chamber through a heated vapor supply line following the vaporizer module. Furthermore, due to its simplified geometry, employing a heated vapor supply line may significantly reduce the risk of vapor condensation prior to delivery into the process chamber.
[0014] In at least one embodiment, the precursor vapor may be mixed with an inert carrier gas, such as nitrogen or argon. The precursor may comprise a small amount of the carrier gas or precursor mixture. A multi-component precursor may be composed of two or more components, for example, in a specific molar ratio. The carrier gas may be a make-up gas mixed with the precursor mixture to dilute the individual precursors to a predetermined concentration. In at least one embodiment, the carrier gas may also comprise a reactive gas, such as hydrogen, ammonia, hydrazine, oxygen, ozone, or water vapor. Generally, the precursor may be heated to an elevated temperature to vaporize the precursor into the gas phase. The elevated temperature may also enable surface reactions within the process (e.g., deposition or etching) chamber.
[0015] In at least one embodiment, the modular vapor distribution system includes a chemical ampoule. The chemical ampoule may be a liquid-compatible container integral with the modular vapor distribution system. The chemical ampoule may be operable to contain one or more precursor compounds in a liquid mixture. In at least one embodiment, the chemical ampoule module may be pressurized to cause the liquid contents to flow into the liquid flow control component module. By way of example, in at least one embodiment, the chemical ampoule module may include an inlet port coupled to a valved inert gas line. The inert gas line may deliver an inert carrier gas (e.g., argon or nitrogen) into the chemical ampoule module for pressurization of the liquid contents. In at least one embodiment, the pressurized liquid contents may flow through an outlet port of the chemical ampoule and into a valved liquid line coupled to an inlet port of the liquid flow control component module. The gas and liquid supply lines may include in-line valves to open or close the flow of the inert gas, the liquid contents, or both, thereby allowing on-demand flow.
[0016] In at least one embodiment, the liquid precursor may be supplied to the modular vapor delivery system by an external chemical storage and delivery unit. In at least one embodiment, the external vapor delivery system may be coupled to the modular vapor delivery system by one or more liquid supply lines. In at least one embodiment, the one or more liquid supply lines may be routed through an exhaust duct. The exhaust duct may be coupled to an enclosure housing the modular vapor delivery system for ventilation of the enclosure.
[0017] In at least one embodiment, a remote lock-out, tag-out (LOTO) valve is coupled in series to one or more liquid supply lines. The in-series coupled LOTO valve may be a shut-off valve to isolate the modular vapor supply system from an externally attached liquid chemical storage and supply unit. For example, the LOTO valve may be employed for maintenance or emergencies. The LOTO valve may be located on the process tool for easy access. In at least one embodiment, the LOTO valve may be housed in an enclosure that is placed in series with an exhaust duct.
[0018] In at least one embodiment, one or more degassing modules may be disposed in series with one or more liquid supply lines coupled to the chemical storage and supply unit. In at least one embodiment, the degassing module may follow the LOTO valve, in the following order: external chemical storage and supply unit, LOTO valve, and degassing module. The one or more degassing modules may remove entrained gas bubbles from the liquid precursor or liquid precursor mixture entering the liquid flow control module.
[0019] In some instances, in the following description, well-known methods and devices are shown in block diagram form rather than in detail in order to avoid obscuring the present disclosure. Throughout this specification, references to an "embodiment" or "one embodiment" or "at least one embodiment" mean that a particular feature, structure, function, or characteristic described in connection with the embodiment is included in at least one embodiment of the present disclosure. Thus, the appearances of the phrases "in an embodiment," "in one embodiment," or "in at least one embodiment" in various places throughout this specification do not necessarily refer to the same embodiment of the present disclosure. Furthermore, particular features, structures, functions, or characteristics may be combined in any suitable manner in one or more embodiments. For example, a first embodiment may be combined with a second embodiment if particular features, structures, functions, or characteristics associated with the two embodiments are not mutually exclusive.
[0020] Herein, the terms "coupled" and "connected," as well as their derivatives, may be used to describe a functional or structural relationship between components. These terms are not intended as synonyms for each other. Rather, in certain embodiments, the term "connected" may be used to indicate that two or more elements are in direct physical, optical, or electrical contact with each other. Herein, "coupled" may be used to indicate that two or more elements are in direct or indirect (with other intervening elements between them) physical, electrical, or magnetic contact with each other and / or that two or more elements cooperate or interact with each other (e.g., causally). Herein, "coupled" may generally refer to one electronic component being directly attached to another electronic component. One component may be coupled to another component by an electric or magnetic field, which is controlled by one component and affects the other in some way.
[0021] Here, "above," "below," "between," and "on" may generally refer to the relative location of one component or material to another component or material when such physical relationship is deemed significant. Unless these terms are modified with "directly" or "directly," one or more intervening components or materials may be present. A similar distinction is made in the context of component assemblies. Throughout this specification and in the claims, a list of items joined by the terms "at least one of" or "one or more" may refer to any combination of the listed terms.
[0022] Here, "adjacent" may generally refer to a location where one thing is next to another (e.g., immediately adjacent or nearby with one or more things sandwiched between them) or in close proximity to another (e.g., abutting it).
[0023] Here, a "module" may generally refer to a group of self-contained components that can function together to perform a specific task. The components may be assembled on a common block or chassis. An enclosure may be employed to house the modules.
[0024] Here, "modular" may generally refer to an adjective describing a system that is composed of one or more modules, which may be interchangeable or replaceable.
[0025] Here, "process gas" may generally refer to an inert gas or a reactive carrier gas, such as argon, nitrogen, oxygen, or hydrogen. A substance may be considered a gas if it is in a gaseous state at room temperature. A process gas may also contain or be a precursor vapor. In a process gas, the precursor is generally in a vapor state at an elevated temperature by sublimation or boiling. The vapor may condense or crystallize at a temperature below a critical temperature.
[0026] As used herein, "carrier gas" may generally refer to an inert or reactive gas that is mixed with one or more vapors, e.g., to dilute the one or more vapors and carry them in a carrier gas-based stream.
[0027] Here, "liquid state" may generally refer to a substance that is liquid at or near room temperature and at temperatures above room temperature.
[0028] Here, "vapor state" may generally refer to a substance that has changed from a liquid state to a gaseous state. The substance may be heated to its boiling point to change it from a liquid state to a gaseous state, or to its sublimation point to change it from a solid state to a gaseous state by sublimation.
[0029] Here, "precursor" may generally refer to a chemical that can undergo a surface or gas phase reaction during a deposition process to convert into a solid film on a surface. A precursor may be a chemical reactant that participates in a surface or gas phase reaction to produce a surface film.
[0030] Here, "precursor liquid" may generally refer to a precursor that is in a liquid state at room temperature, for example, well below its vaporization temperature.
[0031] Here, "precursor vapor" may generally refer to a precursor that has been heated to its vaporization temperature to convert it from a condensed, liquid, or solid state to a vapor state. The precursor may be heated, for example, to its boiling point or sublimation temperature.
[0032] As used herein, a "mass flow controller" (MFC) may generally refer to a device operable to control the mass flow rate of a liquid or gas.
[0033] Here, the term "liquid flow controller" (LFC) may generally refer to a flow control device that is specialized for controlling the flow rate of a liquid.
[0034] As used herein, the terms "surface mount substrate" or "substrate" may generally refer to a plate or block having subsurface flow channels for the transport of gases or liquids. The substrate has a mounting surface to which surface-mountable valves, filters, pressure regulators, gauges, tube couplers, etc. can be bolted. The mounting surface has a plurality of openings that align with inlet and outlet ports on the bottom flange of the surface mount component. The openings are fluidly coupled to the internal flow channels. The fluid ports on the bottom of the surface mount component align with the surface openings, placing the surface mount component in series with the subsurface flow channels. The coupling may be in series, allowing fluid to flow inevitably through the surface mount component.
[0035] Here, the term "surface mount component" may generally refer to a modular valve, flow controller, gauge, filter, pressure regulator, etc., which may have a base flange that is bolted onto a surface mount substrate. The surface mount substrate may be configured to flow gas or liquid through a subsurface flow path in which a series of openings along rows or columns are fluidly coupled by flowing into the flow path at spaced intervals along the flow path. The openings may align with inlet and outlet ports on the bottom surfaces of multiple surface mount components, allowing liquid or gas to sequentially enter surface mount components fluidly coupled to the same subsurface flow path. Multiple surface mount components may be coupled to the same subsurface flow path by mounting the substrate along rows or columns of openings that lead to the subsurface flow path.
[0036] Here, "flow control components" may generally refer to surface mounted or freestanding flow control components such as valves, filters, and mass flow controllers that can control the flow of gases and liquids.
[0037] Here, a "flow control component module" may generally refer to a module of a modular system, such as a modular steam supply system. A flow control component module may be comprised of one or more flow control components.
[0038] Herein, "vaporizer module" may generally refer to a vaporizer device operable to provide heat of vaporization to a component liquid stream to vaporize all components of the liquid stream.
[0039] Here, "coupled" may generally refer to components that are coupled in such a way that a fluid (e.g., a gas or liquid) can flow from one component to the other. The term "fluidically coupled" may have the same meaning. For example, if a conduit opens into the interior of a container, the conduit may be coupled (or fluidly coupled) to the container such that a fluid can flow between the conduit and the container.
[0040] Here, "reservoir" may generally refer to a container for containing a gas or liquid.
[0041] Herein, the term "chemical ampoule" may generally refer to a reservoir (ampule) that can be used to contain a liquid substance.
[0042] Here, "vapor supply line" may generally refer to metal, glass, or polymer tubing employed to transport gases and vapors from one point to another within a system that includes a vapor source or generation point.
[0043] Here, the term "carrier gas line" may generally refer to a gas supply line that transports a carrier gas.
[0044] Here, the term "liquid supply line" may generally refer to a metal, glass, or polymeric tube employed to transport a liquid from one point to another within a system that includes a liquid supply source.
[0045] Here, the term "duct" may generally refer to a conduit.
[0046] Here, "exhaust duct" may generally refer to a conduit connected to an exhaust system, which may be a ventilation system with active air convection to create suction within an enclosed space, allowing unwanted vapors and gases that have accumulated within the enclosed space to be expelled and replenish the air within the space.
[0047] Here, the term "valve" may generally refer to a device capable of gating the flow of a fluid, such as a liquid or gas. For example, a gate valve, butterfly valve, or ball valve may be fully open or fully closed. The valve may also regulate the flow of the fluid while fully open or fully closed.
[0048] Here, a "diverter valve" may generally refer to a three-way valve coupled to a vacuum exhaust. The diverter valve may be operable to switch the flow of gas or liquid in one line to a vacuum exhaust.
[0049] Here, the term "lock-out, tag-out (LOTO) valve" may generally refer to a type of isolation valve that can be employed to isolate one or more sections, modules, or portions of a liquid or gas processing device from other sections, modules, or portions of the same or different devices. This type of valve has the feature of being able to be secured in a given state (e.g., closed) by an externally attached locking mechanism.
[0050] Here, "inlet port" may generally refer to a port on a device, such as a vaporizer module, a valve, a mass flow controller, etc., to which a conduit is connected and which delivers a flow of liquid or gas entering from the conduit.
[0051] Here, "outlet port" may generally refer to a port of a device, such as a vaporizer module, a valve, a mass flow controller, etc., to which a conduit is connected and from which an outflowing flow of liquid or gas is released into the conduit.
[0052] Here, "semiconductor processing tool" may generally refer to an apparatus comprising a vacuum chamber in which integrated electronic circuits and microelectromechanical systems (MEMS) devices can be fabricated on semiconductor wafers. The semiconductor wafers may be processed by various deposition and etching processes that are typically performed in high vacuum. The high vacuum may be developed within the vacuum chamber.
[0053] Here, the term "showerhead" may generally refer to a gas distribution manifold employed within a vacuum chamber of a semiconductor process tool. The showerhead may include a plurality of openings through which process gases can be dispersed within the vacuum chamber. The showerhead may be supplied with process gases either through a gas regulation assembly or directly from a process gas source. The showerhead may be employed within a vacuum chamber of a semiconductor process tool.
[0054] Here, "conduit" may generally refer to a pipe or tube that carries gas or liquid.
[0055] Here, "vacuum chamber" may generally refer to a chamber that is evacuated to a high vacuum. Vacuum chambers may be employed in semiconductor processing tools for the fabrication of integrated circuits and MEMS devices. Deposition, cleaning, and etching processes are most commonly performed in vacuum chambers.
[0056] Here, the term "process chamber" may generally refer to a vacuum chamber dedicated to, for example, the fabrication of semiconductor integrated circuits. The process chamber is part of a process tool and may include a showerhead for introducing gases and vapors into the process chamber. The process chamber may also generally include a wafer chuck for supporting a semiconductor or insulator wafer as a substrate for chemical vapor deposition or etching processes.
[0057] Unless otherwise indicated by the clear context of their use, "substantially equal," "approximately equal," and "approximately equal" generally may mean only an incidental deviation between the two so described. In the art, such deviation is typically no more than + / - 10% of the referenced value.
[0058] 1 shows a block diagram of a modular vapor delivery system 100 comprising a flow control component module 102 and a vaporizer module 104. Modular vapor delivery system 100 may be depicted by a rectangle surrounding flow control component module 102 and vaporizer module 104. In at least one embodiment, flow control component module 102 and vaporizer module 104 may be mounted on a substrate or base plane. In at least one embodiment, flow control component module 102 and vaporizer module 104 may be mounted on a platform within an enclosure (e.g., a cabinet).
[0059] In at least one embodiment, the modular steam supply system 100 may include high-temperature materials that are substantially resistant to corrosive chemicals. In at least one embodiment, the modular steam supply system components may include materials such as, but not limited to, stainless steel or high-temperature nickel alloys such as Hastelloy. Other suitable materials may also be included, such as metal alloys including titanium, tungsten, or tantalum, according to at least one embodiment. In at least one embodiment, the substrate may include a high-temperature, chemically resistant polymer such as aromatic polyetherketone (PEEK) or a fluoropolymer (e.g., Teflon).
[0060] In at least one embodiment, the flow control component module 102 may comprise one or more liquid flow control components, such as, but not limited to, valves, liquid mass flow controllers, and gas mass flow controllers (not shown). In at least one embodiment, the flow control component module 102 may comprise a surface mount substrate on which surface mountable flow control components, such as valves and gas and / or liquid mass flow controllers, may be mounted and interconnected. In at least one embodiment, the surface mount substrate may comprise a plurality of openings in the mounting surface. In at least one embodiment, the openings may allow fluid communication between the liquid flow control components and a plurality of gas flow paths within the surface mount substrate.
[0061] In at least one embodiment, the valves and mass flow controllers may be interconnected by swage fittings and metal tubing. In at least one embodiment, the flow control component module 102 may include one or more inlet ports 106, 108, 110, and 112, which may be coupled to sources of liquid precursors through liquid delivery lines 114, 116, 118, and 120. In at least one embodiment, any or all of the liquid supply lines 114-120 may be unconnected. In the illustrated embodiment, the liquid supply lines 116, 118, and 120 are represented by dashed lines to indicate that they may be connected as desired. In at least one embodiment, the liquid supply line 114 may be connected to a liquid source, as described below.
[0062] In at least one embodiment, multiple pure precursors may be fed into and mixed within a modular vapor delivery system. In at least one embodiment, any or all of the liquid feed lines 116-120 may be employed for the introduction of multiple pure liquid precursor species into the flow control component module 102. In at least one embodiment, the pure liquid precursor species may be mixed directly by mixing the components on the flow control component module 102.
[0063] In at least one embodiment, flow control component module 102 may include an inlet port 122 for introducing a carrier gas through a gas supply line 124. In at least one embodiment, flow control component module 102 may further include an additional inlet port 126 for the introduction of a liquid precursor species or mixture. In at least one embodiment, inlet ports 106, 108, 110, 112, 122, and 126 may be swage fittings connected to tubing.
[0064] In at least one embodiment, a degassing module 127 is coupled to inlet port 126 of on-board modular vapor delivery system 100. In at least one embodiment, degassing module 127 may be coupled to any of inlet ports 106, 108, 110, 112, 122, or 126. In at least one embodiment, multiple degassing modules (not shown) may be deployed in on-board modular vapor delivery system 100. In at least one embodiment, degassing module 127 may remove dissolved gases from the liquid precursor entering flow control component module 102.
[0065] In at least one embodiment, a liquid flow controller (LFC) 128 may be coupled to an outlet port 130 of the flow control component module 102 and to an inlet port 132 of the vaporizer module 104. In at least one embodiment, a carrier gas line 134 has a first terminal coupled to an outlet port 136 of the flow control component module 102 and a second terminal coupled to an inlet port 138 of the vaporizer module 104.
[0066] In at least one embodiment, vaporizer module 104 may be operable to mix a liquid precursor mixture entering inlet port 132 with a carrier gas entering inlet port 138. In at least one embodiment, the liquid precursor mixture may be premixed by flow control component module 102 with a carrier gas entering through inlet port 122 before entering vaporizer module 104. In at least one embodiment, the premixed precursor mixture may be further mixed and diluted with the carrier gas still entering vaporizer module 104 through inlet port 138. In at least one embodiment, the flow rate of the carrier gas may be adjusted to obtain a precise concentration of precursor species in the precursor stream or multi-component precursor mixture stream.
[0067] In at least one embodiment, vaporizer module 104 includes a heating chamber (not shown) that rapidly vaporizes, for example, a single-component or multi-component liquid stream entering through inlet port 132. In at least one embodiment, vaporizer module 104 may be operable to vaporize substantially all of the liquid entering its heating chamber, thereby enabling the abundance (e.g., molar, mass, or volumetric) of the multi-component precursor vapor to be substantially the same as the abundance in the vaporized liquid stream. In at least one embodiment, vaporizer module 104 may be operable to mix the vapor with a carrier gas entering through inlet port 138, thereby enabling the concentration of precursor species to be adjusted. In at least one embodiment, a gas stream including the precursor vapor and carrier gas may exit vaporizer module 104 at outlet port 140.
[0068] In at least one embodiment, a heated vapor supply line 142 (enclosed in a dashed box) may be coupled to the outlet port 140 and a process chamber (not shown). In at least one embodiment, a heating jacket or heating tape may be wrapped or wrapped around the heated vapor supply line 142. In at least one embodiment, the heating tape or heating jacket may be electrically coupled to a temperature controller. In at least one embodiment, a feedback circuit for the temperature controller may include temperature sensors such as thermocouples and resistance temperature detectors (RTDs). In at least one embodiment, flow control components and lines in modules upstream of the vaporizer module may process liquids. Because liquid processing can generally be performed at room temperature, temperature control of upstream modules may not be necessary. In at least one embodiment, limiting heating and temperature control to the conduits may allow for significant cost reduction and simplified design of the modular vapor delivery system.
[0069] In at least one embodiment, a diverter valve 144 may be connected in series with the outlet port 140 of the vaporizer module 104 and the heated vapor supply line 142. The diverter valve 144 may be coupled to a vacuum system including a vacuum pump (not shown). In at least one embodiment, the diverter valve 144 may be employed, for example, to divert the precursor vapor flow to a vacuum to mitigate pressure fluctuations that may occur when the gas flow is initiated. In at least one embodiment, the diverter valve 144 may be closed to resume the flow of the precursor flow to the process chamber, for example, when the flow reaches a steady state.
[0070] 2 shows a block diagram of a modular vapor delivery system 200 including a chemical ampoule 202 interconnected to a flow control component module 102, according to at least one embodiment. In at least one embodiment, the chemical ampoule 202 may be a container or reservoir operable to contain a liquid precursor. In at least one embodiment, the chemical ampoule 202 may be operable to receive a carrier gas flow through an inlet port 204. In at least one embodiment, the inlet port 204 may be fed by a gas supply line 206. In at least one embodiment, a valve 208 may be coupled in series with the gas supply line 206 to regulate the flow of the carrier gas or inert gas into the chemical ampoule 202. In at least one embodiment, the carrier gas or inert gas may pressurize the liquid contents of the chemical ampoule 202.
[0071] In at least one embodiment, chemical ampoule 202 may be mounted on the same platform employed to mount other modules of modular vapor delivery system 200. In at least one embodiment, chemical ampoule 202 may be contained within a common housing that houses modular vapor delivery system 200. In at least one embodiment, chemical ampoule 202 is removable for maintenance or precursor refilling.
[0072] In at least one embodiment, chemical ampoule 202 may include an outlet port 210. A liquid supply line 212 may be coupled to outlet port 210 and to inlet port 126 of flow control component module 102. In at least one embodiment, a valve 214 may be coupled in line with liquid supply line 212. Valve 214 may allow for metering of liquid precursor into flow control component module 102. In at least one embodiment, a degassing module 127 may be positioned in line with liquid supply line 212 between chemical ampoule 202 and inlet port 126.
[0073] In at least one embodiment, modular vapor delivery system 200 may be substantially similar to modular vapor delivery system 100. For example, the description of the precursor flow path including flow control component module 102 and vaporizer module 104 may be substantially as described for modular vapor delivery system 100.
[0074] FIG. 3 shows a block diagram of a modular vapor delivery system 300. In the illustrated embodiment, precursors are supplied to the modular vapor delivery system 300 by a chemical storage and delivery unit (CSDU) 302, according to at least one embodiment. In at least one embodiment, the CSDU 302 may be external to the modular vapor delivery system 300. In at least one embodiment, the CSDU 302 includes one or more precursor reservoirs (not shown). In at least one embodiment, the one or more precursor reservoirs may be substantially similar to the chemical ampoules 202. In at least one embodiment, the one or more precursor reservoirs may be operable to store a single-component liquid precursor compound. In at least one embodiment, the one or more precursor reservoirs may be operable to store a multi-component precursor mixture.
[0075] In at least one embodiment, the CSDU 302 may include a batch premixing stage (not shown), for example, to precombine multiple liquid precursor compounds in a predetermined abundance ratio (e.g., molar ratio, mass ratio, or volume fraction). In at least one embodiment, the CSDU 302 may include a continuous flow mixing stage, for example, comprising an active pump and an in-line mixer. In at least one embodiment, the CSDU 302 may deliver the precursor mixture through a liquid supply line 114. In at least one embodiment, the liquid supply line 114 may pass through an exhaust duct 304, shown in dotted outline. In at least one embodiment, the exhaust duct 304 is coupled to a cabinet housing for the modular vapor delivery system 300. In at least one embodiment, the exhaust duct 304 may also be coupled to an exhaust ventilation system to provide a negative pressure within the housing. In at least one embodiment, the exhaust duct 304 may enable the exhaust system to remove precursor vapors that may have leaked into the housing. Such vapors may enter the environment and pose a toxic hazard to workers in the vicinity of the tool.
[0076] In at least one embodiment, a lock-out, tag-out (LOTO) valve 306 may be coupled in line with the liquid supply line 114. In at least one embodiment, the LOTO valve 306 is an isolation valve and may be employed to isolate the modular vapor supply system 300 from the CSDU 302. For example, the LOTO valve 306 may be employed for maintenance or emergency purposes. In at least one embodiment, the LOTO valve 306 may be located in an easily accessible area of the process tool. Because the LOTO valve 306 is positioned in line with the liquid supply line 114, which runs through the exhaust duct 304, in at least one embodiment, the LOTO valve 306 may be housed in a housing 307 that is coupled to the exhaust duct 304. In at least one embodiment, the housing 307 may be hermetically sealed and may include a removable cover for access to the LOTO valve 306.
[0077] In at least one embodiment, a degassing module 308 may be coupled in series with the liquid supply line 114. In at least one embodiment, the degassing module 308 may be located on-board modular vapor delivery system 300. In at least one embodiment, the degassing module 308 may be capable of removing dissolved inert gases from the liquid precursor or liquid precursor mixture entering the liquid supply line 114.
[0078] In at least one embodiment, CSDU 302 may supply multiple precursor compounds to modular vapor delivery system 300 as single-component streams flowing through liquid supply lines 116, 118, and 120. In at least one embodiment, liquid supply lines 116, 118, and 120 may supplement liquid supply line 114. As mentioned above, liquid supply lines 116, 118, and 120 may be directly coupled to flow control component module 102. In at least one embodiment, liquid supply lines 116, 118, and 120 may both pass through exhaust duct 310. In at least one embodiment, exhaust duct 310 may be coupled to modular vapor delivery system 300 to vent any leaking vapors that may accumulate, for example, within an enclosure holding modular vapor delivery system 300. In at least one embodiment, exhaust duct 310 may be coupled to a ventilation system.
[0079] In at least one embodiment, LOTO valve 312 may be coupled to liquid supply lines 116, 118, and 120. LOTO valve 312 may be employed to manually or automatically isolate modular steam supply system 300 from CSDU 302. In at least one embodiment, LOTO valve 312 may be employed for maintenance and emergency response to steam leaks, for example.
[0080] In at least one embodiment, a degassing module 314 may be coupled to liquid supply lines 116, 118, and 120. In at least one embodiment, degassing module 314 is on-board vapor supply system 300. In at least one embodiment, degassing module 314 may represent multiple degassing modules. In at least one embodiment, degassing module 314 may be operable to degas multiple liquid streams simultaneously.
[0081] In at least one embodiment, liquid supply lines 114, 116, 118, and 120 may all pass through exhaust duct 304, eliminating exhaust duct 310, LOTO valve 312, and degassing module 314.
[0082] 4 illustrates a block diagram of a system 400 comprising a modular vapor delivery system 300 coupled to a process chamber 402, according to at least one embodiment. In at least one embodiment, the modular vapor delivery system 300 is substantially as described above. In at least one embodiment, the CSDU 302 and the chemical ampoule 202 are both coupled to a flow control component module 102, illustrating the versatility of the modular vapor delivery system 300, including the modular vapor delivery systems 100 and 200. The CSDU 302 and the chemical ampoule 202 are both employed as precursor storage systems, although either or both precursor storage systems may be used.
[0083] In at least one embodiment, the process chamber 402 may be a high-vacuum or ultra-high-vacuum chamber contained within a semiconductor processing tool. In at least one embodiment, a semiconductor integrated circuit fabrication process, such as chemical vapor deposition, etching, or cleaning, may be performed within the process chamber 402. In at least one embodiment, the process chamber 402 includes a gas distribution showerhead (not shown), which may be coupled to the vaporizer module 104. In at least one embodiment, the showerhead is operable to be temperature controlled. While the illustrated embodiment of the system 400 includes the modular vapor supply system 300, the modular vapor supply systems 100 and 200 may similarly be employed to deliver precursor vapors to the process chamber 402.
[0084] In at least one embodiment, process chamber 402 is coupled to modular vapor supply system 300 by heated vapor supply line 142. In at least one embodiment, heated vapor supply line 142 is substantially as described above. As described above, vaporizer module 104 may be the final stage of modular vapor supply system 300 (as well as modular vapor supply systems 100 or 200). As previously mentioned, locating vaporizer module 104 as the final stage of modular vapor supply system 300 may reduce the cost and complexity of system 400. In at least one embodiment, heating of the system may be limited to heated vapor supply line 142.
[0085] In at least one embodiment, the system 400 may include a carrier gas source 404 coupled to the gas supply line 124. In at least one embodiment, the carrier gas source 404 may provide an inert or reactive gas as a carrier gas or pressurized gas for all stages or modular vapor delivery system 300. In at least one embodiment, gas from the carrier gas source 404 may flow into the process chamber 402.
[0086] In at least one embodiment, system 400 may include an exhaust system 406 to which exhaust duct 304 and / or exhaust duct 310 may be coupled.
[0087] In at least one embodiment, system 400 may include a processor 408 for automatic control. In at least one embodiment, processor 408 may be electrically coupled to flow control component module 102 and vaporizer module 104. In at least one embodiment, processor 408 may be coupled to CSDU 302. In at least one embodiment, processor 408 may coordinate the operation of flow control components within flow control component module 102 and vaporizer module 104, for example.
[0088] FIG. 5 shows a process flow chart 500 illustrating an exemplary method for operating a modular steam supply system, such as modular steam supply system 300, in accordance with at least one embodiment of the present disclosure.
[0089] In at least one embodiment, in block 501, the modular vapor delivery system is connected to a process chamber, such as process chamber 402 of a semiconductor processing tool. In at least one embodiment, the process chamber is a high or ultra-high vacuum chamber in which semiconductor chip manufacturing processes can be performed. In at least one embodiment, processes such as chemical vapor deposition, deep reactive ion etching, or plasma cleaning may be performed in the process chamber. In at least one embodiment, the deposition or etching process may employ a mixture of precursors or reactants at predetermined concentrations and abundances.
[0090] In at least one embodiment, such processes are carried out under high or ultra-high vacuum conditions. In at least one embodiment, a gas distribution showerhead receives and distributes vapors (e.g., of deposition precursors) and reactive or inert gases within the process chamber. In at least one embodiment, the vapors and gases may be emitted from holes in a faceplate of the showerhead. In at least one embodiment, the faceplate of the showerhead may be positioned directly above a wafer substrate held on a chuck on a pedestal within the process chamber.
[0091] In at least one embodiment, a heated vapor supply line (e.g., heated vapor supply line 142) may be coupled to a vapor outlet port of a vaporizer module (e.g., outlet port 140 of vaporizer module 104) on a modular vapor supply system. In at least one embodiment, the vaporizer module may be the final stage of the modular vapor supply system. In at least one embodiment, the pre-stages and forelines in the modular vapor supply system relative to the vaporizer module stage solely transport and process liquid or carrier gas and are not heated. In at least one embodiment, the modular vapor supply system configuration allows for cost reduction and simplified design. Therefore, heating may be limited to the heated vapor supply line to maintain the precursor in the gas phase once vaporized by the vaporizer module.
[0092] In at least one embodiment, the vaporizer module may provide sufficient heat to substantially vaporize all components of the precursor mixture. In at least one embodiment, substantially complete vaporization may result in the abundance ratios (e.g., molar ratios, weight ratios, or volume ratios) of the components of the liquid mixture being substantially identical in the vapor phase. In at least one embodiment, the vaporizer module may ensure that a precursor vapor mixture having the correct abundance ratios is introduced into the process chamber.
[0093] In at least one embodiment, the heated vapor supply line may be heated by a heated tape or a coil of heated wire (e.g., nichrome wire). In at least one embodiment, the heated vapor supply line may be covered by a heated blanket or a heated jacket. In at least one embodiment, the heated vapor supply line may be preheated to a set temperature, for example, programmed into a temperature controller. In at least one embodiment, a temperature sensor, for example, embedded in the heated vapor supply line, may provide a feedback signal to the temperature controller. In at least one embodiment, for a precursor mixture, the set temperature of the heated vapor supply line may be determined by the highest boiling point or sublimation point of the mixed precursor components to ensure all components remain in a vapor state.
[0094] In at least one embodiment, the heated vapor supply lines may be heated to a maximum vaporization temperature to mitigate cold spots and eliminate condensation or crystallization of liquid or solid precursor components in the heated vapor supply lines before entering the process chamber. In at least one embodiment, condensation or crystallization of precursor species in the heated vapor supply lines may cause random and undesirable changes in the abundance ratio of the remaining vapor. Furthermore, condensation and crystallization may cause clogging of the lines. In at least one embodiment, the lines in the process chamber may also be heated, similar to the showerhead, to prevent possible condensation or crystallization of precursor species from clogging the showerhead holes and potentially losing abundance ratios.
[0095] In at least one embodiment, a carrier gas is introduced into the modular vapor delivery system at block 502. In at least one embodiment, a carrier gas source (e.g., carrier gas source 404) may be coupled to inlet port 122 of flow control component module 102, as shown in FIG. 4. In at least one embodiment, the carrier gas may be inert, such as argon or nitrogen, or reactive, such as oxygen, hydrogen, hydrazine, ammonia, ozone, or water vapor. In at least one embodiment, the flow rate of the carrier gas may be set by a valve or mass flow controller, for example, within flow control component module 102.
[0096] In at least one embodiment, block 503 sets the flow rate of carrier gas to the vaporizer module. In at least one embodiment, carrier gas source 404 of system 400 may be the primary source of carrier gas for the system. In at least one embodiment, carrier gas may be supplied to an external precursor source (e.g., CSDU 302) by carrier gas source 404 and distributed within the external precursor source (e.g., CSDU 302), for example. In at least one embodiment, CSDU 302 may include a separate carrier gas source, for example, to force the precursor flow. In at least one embodiment, carrier gas may flow from carrier gas source 404, for example, through flow control component module 102, into vaporizer module 104. In at least one embodiment, the flow rate of carrier gas exiting flow control component module 102 at outlet port 136 may be set by, for example, a valve or mass flow controller. In at least one embodiment, within vaporizer module 104, a carrier gas may flow at a preset flow rate to dilute the precursor vapor formed within the flow to a substantially precise concentration ratio.
[0097] In at least one embodiment, block 504 sets the flow rate of the precursor liquid to the vaporizer module 104. In at least one embodiment, pulsed, continuous, or semi-continuous flows of liquid streams containing one or more precursor components may be driven. In at least one embodiment, the precursor flow may be driven by pressurizing a chemical ampoule (e.g., chemical ampoule 202) containing a single-component precursor liquid or a multi-component precursor liquid, or by pressurizing a containment vessel similar to chemical ampoule 202 on the CSDU 302. In at least one embodiment, the CSDU 302 includes an active pumping system for generating the continuous precursor flow. In at least one embodiment, the liquid flow controller (LFC) 128 may primarily determine the liquid flow rate of the liquid precursor stream entering the vaporizer module 104 after passing through the flow control component module 102.
[0098] In at least one embodiment, within vaporizer module 104, the carrier gas stream and the liquid precursor stream converge and flow into a heating chamber within vaporizer module 104. In at least one embodiment, the heating chamber may provide sufficient heat to continuously vaporize all of the liquid stream entering it. In at least one embodiment, the precursor vapor generated within the heating chamber mixes with the carrier gas stream due to turbulence, thereby diluting the precursor vapor with the carrier gas. In at least one embodiment, the flow rates of the liquid precursor stream and the carrier gas stream may be set by the LFC 128 and mass flow controllers, respectively, within flow control component module 102.
[0099] In at least one embodiment, in block 505, the precursor vapor diluted in the carrier gas may be delivered to the process chamber 402 via the heated vapor delivery line 142. As described above, the heated vapor delivery line 142 may be heated to a set temperature corresponding to a maximum vaporization temperature of the precursor mixture. In at least one embodiment, the set temperature may be controlled by a temperature controller. In at least one embodiment, setting the temperature of the heated vapor delivery line to the maximum vaporization temperature may, for example, mitigate condensation of precursor components in the mixture to a liquid state or crystallization to a solid state. In at least one embodiment, abundance ratios may be maintained during transfer to the process chamber, and clogging of the lines may be avoided.
[0100] In at least one embodiment, vapor may be delivered from heated vapor supply line 142 to a showerhead within process chamber 402. In at least one embodiment, the gas and vapor supply lines within process chamber 402, as well as the showerhead itself, may be heated to mitigate the risk of condensation or crystallization of precursors within the showerhead. In at least one embodiment, condensation of the precursor vapor stream may also be avoided. In at least one embodiment, condensation of precursor vapor within the showerhead may cause droplets to be released into the process chamber during the chemical vapor deposition process. In at least one embodiment, the droplets may cause defects, for example, in a monocrystalline or polycrystalline film being grown.
[0101] Below are provided examples illustrating various embodiments, which can be combined with other embodiments, and thus various embodiments can be combined with other embodiments without changing the scope of the invention.
[0102] Example 1 is a modular vapor supply system comprising a flow control component module having a first inlet port and a second inlet port, a liquid flow controller coupled to a first outlet port of the flow control component module, and a vaporizer module coupled to a second outlet port of the liquid flow controller.
[0103] Example 2 is the modular vapor supply system described in any example herein, particularly example 1, wherein a diverter valve is coupled to the third outlet port of the vaporizer module.
[0104] Example 3 is a modular vapor delivery system as described in any example herein, particularly Example 1, wherein a first carrier gas line is coupled to a first inlet port of a flow control component module.
[0105] Example 4 is a modular vapor supply system described in any example herein, particularly Example 3, wherein a second carrier gas line is coupled to a fourth outlet port of the flow control component module, and the second carrier gas line is coupled to a vaporizer module.
[0106] Example 5 is a modular vapor delivery system as described in any example herein, particularly Example 4, further comprising a chemical ampoule, the chemical ampoule coupled to the second inlet port of the flow control component module.
[0107] Example 6 is a modular vapor delivery system as described in any example herein, particularly Example 5, wherein a first valve is coupled to the chemical ampoule, and the first valve is coupled to a second inlet port of the flow control component module.
[0108] Example 7 is a modular vapor delivery system described in any example herein, particularly Example 6, wherein a second valve is coupled to a third inlet port of the chemical ampoule.
[0109] Example 8 is a modular vapor delivery system as described in any example herein, particularly Example 7, wherein a third carrier gas line is coupled to the second valve.
[0110] Example 9 is a modular vapor delivery system as described in any example herein, particularly Example 1, wherein the chemical storage and delivery unit is coupled to the second inlet port of the flow control component module.
[0111] Example 10 is a modular vapor supply system as described in any example herein, particularly Example 9, wherein a liquid supply line is coupled to the chemical storage and supply unit and to the second inlet port of the flow control component module.
[0112] Example 11 is a modular vapor supply system as described in any example herein, particularly example 10, wherein the liquid supply line passes through an exhaust duct, and the exhaust duct is coupled to a housing that houses the flow control component module.
[0113] Example 12 is a modular vapor delivery system as described in any example herein, particularly Example 11, wherein the degassing module is coupled in series with the liquid delivery line.
[0114] Example 13 is a modular vapor supply system as described in any example herein, particularly example 12, wherein a lock-out, tag-out (LOTO) valve is coupled to the liquid supply line.
[0115] Example 14 is a modular steam supply system as described in any example herein, particularly Example 13, wherein the LOTO valve is housed within a housing coupled to the exhaust duct, and the housing is sealed.
[0116] Example 15 is a system comprising a process chamber and a modular vapor supply system coupled to the process chamber, the modular vapor supply system comprising a flow control component module having a first inlet port and a second inlet port, a liquid flow controller coupled to a first outlet port of the flow control component module, and a vaporizer module coupled to a second outlet port of the liquid flow controller.
[0117] Example 16 is the system of any example herein, particularly example 15, wherein a diverter valve is coupled to the third outlet port of the vaporizer module and to the vacuum pump.
[0118] Example 17 is the system of any example herein, particularly example 15, wherein the flow control component module comprises a mass flow controller coupled to the inert gas line.
[0119] Example 18 is a method of providing a modular vapor supply system, the modular vapor supply system comprising: a flow control component module having a first inlet port and a second inlet port; a liquid flow controller coupled to the first outlet port of the flow control component module; and a vaporizer module coupled to the second outlet port of the liquid flow controller; preheating a heated vapor supply line to a set temperature, the heated vapor supply line being coupled to the vaporizer module and the process chamber; flowing an inert gas through the modular vapor supply system; setting a first flow rate of the inert gas to the vaporizer module; and setting a second flow rate of the precursor liquid to the vaporizer module.
[0120] Example 19 is the method described in any example herein, particularly Example 18, wherein flowing the inert gas through the modular vapor supply system includes configuring a mass flow controller coupled to the inert gas line and the vaporizer module.
[0121] Example 20 is a method as described in any example herein, particularly example 18, wherein setting a second flow rate of the precursor liquid to the vaporizer module includes setting a liquid flow controller, the liquid flow controller coupled to the flow control component module and coupled to the vaporizer module.
[0122] In addition to what is described herein, various modifications may be made to the embodiments and implementations of the present disclosure without departing from their scope. Therefore, the description of the embodiments herein should be construed as illustrative and not limiting the scope of the present disclosure. The scope of the present invention should be evaluated solely with reference to the following claims.
Claims
1. a flow control component module having a first inlet port and a second inlet port; a liquid flow controller coupled to a first outlet port of the flow control component module; a vaporizer module coupled to a second outlet port of the liquid flow controller; 1. A modular steam supply system comprising:
2. 10. The modular steam supply system of claim 1, A modular vapor supply system, wherein a diverter valve is coupled to the third outlet port of the vaporizer module.
3. 10. The modular steam supply system of claim 1, A modular vapor delivery system, wherein a first carrier gas line is coupled to the first inlet port of the flow control component module.
4. 4. The modular steam supply system of claim 3, a second carrier gas line coupled to a fourth outlet port of the flow control component module; The second carrier gas line is coupled to the vaporizer module.
5. 5. The modular steam supply system of claim 4, further comprising a chemical ampoule; The chemical ampoule is coupled to the second inlet port of the flow control component module.
6. 6. The modular steam supply system of claim 5, a first valve coupled to the chemical ampoule; The first valve is coupled to the second inlet port of the flow control component module.
7. 7. The modular steam supply system of claim 6, A modular vapor delivery system, wherein a second valve is coupled to a third inlet port of the chemical ampoule.
8. 8. The modular steam supply system of claim 7, A third carrier gas line is coupled to the second valve.
9. 10. The modular steam supply system of claim 1, A modular vapor delivery system, wherein a chemical storage and delivery unit is coupled to the second inlet port of the flow control component module.
10. 10. The modular steam supply system of claim 9, A modular vapor delivery system, wherein a liquid supply line is coupled to the chemical storage and delivery unit and to the second inlet port of the flow control component module.
11. 11. The modular steam supply system of claim 10, The liquid supply line passes through an exhaust duct, The modular steam supply system, wherein the exhaust duct is coupled to an enclosure that houses the flow control component modules.
12. 12. The modular steam supply system of claim 11, A modular vapor delivery system, wherein a degassing module is coupled in series with the liquid delivery line.
13. 13. The modular steam supply system of claim 12, A modular vapor supply system, wherein a lock-out, tag-out (LOTO) valve is coupled to the liquid supply line.
14. 14. The modular steam supply system of claim 13, the LOTO valve is housed in a housing coupled to the exhaust duct; The modular vapor delivery system wherein the enclosure is sealed.
15. a process chamber; a modular vapor delivery system coupled to the process chamber; A system comprising: The modular steam supply system comprises: a flow control component module having a first inlet port and a second inlet port; a liquid flow controller coupled to a first outlet port of the flow control component module; a vaporizer module coupled to a second outlet port of the liquid flow controller; A system comprising:
16. 16. The system of claim 15, A diverter valve is coupled to the third outlet port of the vaporizer module and to a vacuum pump.
17. 16. The system of claim 15, The system wherein the flow control component module comprises a mass flow controller coupled to an inert gas line.
18. 1. A modular steam supply system, comprising: a flow control component module having a first inlet port and a second inlet port; a liquid flow controller coupled to a first outlet port of the flow control component module; a vaporizer module coupled to a second outlet port of the liquid flow controller; and preheating a heated steam supply line to a set temperature, the heated steam supply line being coupled to the vaporizer module and a process chamber; flowing an inert gas through the modular vapor supply system; setting a first flow rate of the inert gas to the vaporizer module; setting a second flow rate of precursor liquid to the vaporizer module; A method comprising:
19. 20. The method of claim 18, The method, wherein flowing the inert gas through the modular vapor supply system includes setting a mass flow controller coupled to an inert gas line and the vaporizer module.
20. 20. The method of claim 18, setting the second flow rate of the precursor liquid to the vaporizer module includes setting a flow controller for the liquid; The method wherein the liquid flow controller is coupled to the flow control component module and is coupled to the vaporizer module.