Halogen-resistant thermal barrier coating for processing chambers

Abstract

A coating on a processing chamber component includes a metallic bond layer deposited on a surface of the component. A thermal barrier layer is deposited on the bond layer. A substantially non-porous ceramic sealing layer is deposited on the thermal barrier layer. The sealing layer substantially conforms to surface irregularities of the thermal barrier layer. The chemical nature of the sealing layer is selected for resistance to attack from halogen-containing chemicals.

Description

[Technical Field]

[0001]

[0001] Embodiments of the present disclosure generally relate to chambers used to process substrates, such as in the manufacture of electronic devices. In particular, the present disclosure relates to coatings applied to chamber components that impede heat transfer to the chamber components and provide protection against corrosion and erosion. [Background technology]

[0002] 2. Description of Related Art

[0002] Substrate processing is typically performed in a chamber where the substrate is exposed to heat and reactive chemicals. In some processing steps, the chemicals may be present in the form of plasma. Cleaning steps typically involve exposing the processing chamber to corrosive chemicals, such as hydrochloric acid, at elevated temperatures. Processing and cleaning environments, including corrosive chemicals and plasma, can adversely affect the processing chamber and associated equipment therein. Furthermore, temperature gradients across a substrate during processing, such as those caused by heat conduction through the walls of the processing chamber, can adversely affect the uniformity of material deposition on the substrate, which in turn can affect the quality of the finished product.

[0003]

[0003] Therefore, there is a need for improved systems and processes that alleviate the above problems. Summary of the Invention

[0004]

[0004] The present disclosure relates to coatings suitable for components used in chambers for processing substrates. In one embodiment, a substrate processing chamber component includes a metal body. The component includes a metallic bond layer deposited on a surface of the metal body. The component further includes a thermal barrier layer deposited on the bond layer, and a substantially non-porous ceramic sealing layer deposited on the thermal barrier layer.

[0005] In another embodiment, a substrate processing chamber component includes a body comprising stainless steel. The component includes a metallic bond layer of a first thickness deposited on a surface of the body. The bond layer has a corrosion resistance to halogen-containing chemicals that is greater than the corrosion resistance of the body to halogen-containing chemicals. The component further includes a thermal barrier layer of a second thickness deposited on the bond layer. The second thickness is greater than the first thickness. The component further includes a substantially non-porous ceramic sealing layer of a third thickness deposited on the thermal barrier layer. The third thickness is less than the first thickness.

[0006] In another embodiment, a substrate processing chamber component includes a metal body. The component includes a metallic bond layer deposited on a surface of the metal body, a thermal barrier layer deposited on the bond layer, and a ceramic sealing layer deposited on the thermal barrier layer. The ceramic sealing layer includes a first sublayer including a first ceramic, a second sublayer including a second ceramic, and a third sublayer including a third ceramic. The second ceramic is of a different chemical composition than the first and third ceramics.

[0007]

[0007] So that the above-mentioned features of the present disclosure may be understood in detail, a more particular description of the present disclosure briefly summarized above will be obtained by reference to embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the accompanying drawings illustrate only exemplary embodiments and therefore should not be considered as limiting its scope, as the present disclosure may admit of other equally effective embodiments. [Brief explanation of the drawings]

[0008] [Figure 1] 1 is a schematic diagram of a processing chamber. [Figure 2]

[0009] 2 illustrates an embodiment of a coating applied to one or more components of the processing chamber of FIG. 1. [Figure 3]

[0010] 3 is a schematic diagram of an embodiment of a portion of the coating of FIG. 2. [Figures 4A-4C]

[0011] 3 is a schematic diagram of an embodiment of a portion of the coating of FIG. 2. [Figure 4D-4E]

[0012] FIG. 1 is a schematic diagram illustrating how the morphology, porosity, and open porosity of a ceramic layer can be related to the technique used to deposit the ceramic. [Figure 4F-4G]

[0013] 3 is a schematic diagram of an embodiment of a portion of the coating of FIG. 2. [Figures 5A-5E]

[0014] 3 is a schematic diagram of an embodiment of a portion of the coating of FIG. 2. DETAILED DESCRIPTION OF THE INVENTION

[0009]

[0015] For ease of understanding, where possible, the same reference numerals have been used to designate identical elements that are common to multiple figures. It is envisioned that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.

[0010]

[0016] The present disclosure relates to chambers used to process substrates, such as in the manufacture of electronic devices. More specifically, the present disclosure relates to coatings suitable for chamber components such as chamber walls, susceptor supports, gas supply fittings, gas exhaust fittings, etc. The coatings impede heat conduction to the chamber components and provide protection against corrosion and erosion.

[0011]

[0017] 1 schematically illustrates a processing chamber 100. The processing chamber 100 includes an upper heating module 180 above a chamber body 170 and a lower heating module 190 below the chamber body 170.

[0012]

[0018] The processing chamber 100 may be a processing chamber for performing any thermal process, such as an epitaxial process. The processing chamber 100 may be used to process a substrate, including depositing material on the surface of the substrate. While a processing chamber for an epitaxial process is shown and described, it is contemplated that the concepts of the present disclosure are applicable to other processing chambers capable of controlling thermal cycles to heat a substrate for processes such as thermal annealing, thermal cleaning, thermal chemical vapor deposition, thermal oxidation, and thermal nitridation. It is further contemplated that embodiments of the present disclosure may be applied to components of other types of processing chambers, such as processing chambers configured to perform processing operations involving plasma, such as etching and / or plasma-enhanced chemical vapor deposition.

[0013]

[0019] 1 , a chamber body 170 includes an upper window 120 and a lower window 130 with a processing space 140 therebetween. The processing space 140 is substantially cylindrical. The upper window 120 includes a base 125 secured to the chamber body 170, and the lower window 130 includes a base 135 secured to the chamber body 170. A neck 132 connected to the lower window 130 is disposed around a shaft 154 of a susceptor support 152. The susceptor support 152 carries a susceptor 150 on which a substrate 110 can be positioned within the processing space 140.

[0014]

[0020] It is contemplated that the susceptor 150 may be made of graphite coated with silicon carbide. A motor (not shown) rotates the shaft 154 of the susceptor support 152 about the longitudinal axis of the shaft 154, which in turn rotates the susceptor 150 and the substrate 110. The substrate 110 is brought into the chamber body 170 via a loading port 160 and positioned on the susceptor 150.

[0015]

[0021] The processing chamber 100 includes one or more gas inlets 162. Each gas inlet 162 includes a nozzle 164. The processing chamber 100 includes one or more gas exhaust fittings 166. The processing chamber 100 includes one or more liners 168 within the processing space 140.

[0016]

[0022] One or more components of the processing chamber 100 exposed to the processing space 140 are coated with the coating 200. It is contemplated that the coating 200 may be applied to metal components of the processing chamber 100 exposed to the processing space 140. Examples of metal components that may be coated with the coating 200 include the walls of the chamber body 170, the susceptor support 152, the shaft 154, the gas inlet(s) 162, the nozzle(s) 164, the gas exhaust fitting(s) 166, the liner 168, etc. In some embodiments, the base 125 of the upper window 120 and / or the base 135 of the lower window 130 comprise metal components that may be coated with the coating 200.

[0017]

[0023] In other processing chambers, such as those configured to perform processing operations involving plasma, exemplary metal components that may be coated with coating 200 include the floor, lid and walls of the chamber body, the substrate support structure, liners, gas exhaust fittings, and gas supply fittings such as showerheads, gas distribution plates, and plenum walls.

[0018]

[0024] Figure 2 illustrates, in cross section, an embodiment of coating 200. Figure 2 shows coating 200 applied to surface 104 of metal body 102. Metal body 102 represents any metal structure, as described above, that may be part of or used within a processing chamber, such as processing chamber 100. Examples of metals to which coating 200 may be applied include aluminum and steel, e.g., stainless steel, such as 316L.

[0019]

[0025] The thickness 202 of the coating 200 is between about 0.5 mm and about 10 mm. For example, the thickness 202 of the coating 200 can be between 1 mm and 10 mm, e.g., 1.5 mm and 10 mm, 1.5 mm and 9 mm, 1.5 mm and 8 mm, 2 mm and 8 mm, 2.5 mm and 8 mm, 2.5 mm and 7 mm, 3 mm and 7 mm, 3.5 mm and 7 mm, 3.5 mm and 6 mm, 4 mm and 6 mm, 4.5 mm and 6 mm, or 5 mm and 6 mm. Other thicknesses are also contemplated.

[0020]

[0026] The coating 200 includes three layers: a bonding layer 210 on the surface 104 of the metal body 102; a thermal barrier layer 220 on the bonding layer 210; and a sealing layer 280 on the thermal barrier layer 220.

[0021]

[0027] The bonding layer 210 is metallic. In some embodiments, which can be combined with other embodiments, the bonding layer 210 is a pure metal, such as pure nickel or pure titanium. It is contemplated that the pure metal may have a purity of at least 99%, e.g., at least 99.5%, at least 99.6%, at least 99.7%, at least 99.8%, or at least 99.9%. In some embodiments, the bonding layer 210 is an alloy, such as a cobalt-based alloy, an iron-based alloy, a nickel-based alloy, or a titanium-based alloy. In some embodiments, the bonding layer 210 includes a composite of ceramic particulates dispersed in a metal matrix. In one example, the metal matrix is ​​nickel, and the ceramic particulates are metal oxides. In some embodiments, the addition of the ceramic particulates to the metal matrix adjusts the thermal expansion coefficient of the bonding layer 210. In some embodiments, the addition of the ceramic particulates to the metal matrix promotes adhesion of the bonding layer 210 to the thermal barrier layer 220.

[0022]

[0028] In some embodiments, which may be combined with other embodiments, the metal of bonding layer 210 is selected based at least in part on the formation of a thermally grown oxide layer on bonding layer 210 during use of metal body 102 in processing a substrate, such as substrate 110. In some embodiments, which may be combined with other embodiments, the metal of bonding layer 210 is selected based at least in part on the prevention of the formation of a thermally grown oxide layer on bonding layer 210 during use of metal body 102 in processing a substrate, such as substrate 110.

[0023]

[0029] Bonding layer 210 has a corrosion resistance to halogen-containing chemicals that is greater than the corrosion resistance to halogen-containing chemicals of metal body 102. Examples of such halogen-containing chemicals include halogen acids (e.g., hydrochloric acid, hydrofluoric acid, etc.), halogen gases (e.g., chlorine, fluorine, bromine, chlorofluorides, etc.), gaseous halides (e.g., chlorine trifluoride, carbon tetrafluoride, nitrogen trifluoride, etc.), and plasmas containing such halogen acids, halogen gases, or gaseous halides.

[0024]

[0030] In some embodiments, which can be combined with other embodiments, bonding layer 210 has a coefficient of thermal expansion that is less than the coefficient of thermal expansion of metal body 102 and greater than or equal to the coefficient of thermal expansion of thermal barrier layer 220. In one example, bonding layer 210 has a coefficient of thermal expansion that is greater than or equal to the coefficient of thermal expansion of the portion of thermal barrier layer 220 adjacent to bonding layer 210.

[0025]

[0031] The thickness 212 of the bonding layer 210 is between about 50 microns and about 500 microns. For example, the thickness 212 of the bonding layer 210 may be between 50 microns and 450 microns, e.g., between 50 microns and 400 microns, between 50 microns and 300 microns, between 50 microns and 200 microns, or between 50 microns and 100 microns. Other thicknesses are also contemplated.

[0026]

[0032] The bonding layer 210 can be substantially non-porous. In one example, the bonding layer 210 has a porosity of 0.1% or less, e.g., 0.05% or less, 0.01% or less, or 0%. In some embodiments that can be combined with other embodiments, the bonding layer 210 has a porosity of greater than 0.1%, e.g., up to 10%. In one example, the bonding layer 210 has a porosity of 0.5% to 10%, e.g., 1% to 9%, 1.5% to 8%, 2% to 7%, 2.5% to 6%, or 3% to 5%. In some embodiments that can be combined with other embodiments, the bonding layer 210 has a porosity that increases with distance away from the surface 104 of the metal body 102. In one example, the bonding layer 210 has a porosity of 0.1% or less at the surface 104, and the porosity increases to 3% away from the surface 104.

[0027]

[0033] Bond layer 210 is deposited on surface 104 of metal body 102 by a thermal spray technique, such as air plasma spray (APS) or high velocity oxygen fuel. In some embodiments, which may be combined with other embodiments, bond layer 210 is deposited as a single layer on surface 104. However, in some embodiments, bond layer 210 is deposited as multiple sublayers on surface 104. For example, as shown schematically in FIG. 3 , in some embodiments, bond layer 210 includes a first sublayer 216 on surface 104 of metal body 102 and a second sublayer 218 on first sublayer 216. In some embodiments, first sublayer 216 and second sublayer 218 are formed by the same thermal spray technique. In some embodiments, first sublayer 216 and second sublayer 218 are formed by different thermal spray techniques.

[0028]

[0034] The first sublayer 216 and the second sublayer 218 may be formed of the same metal. Alternatively, the first sublayer 216 and the second sublayer 218 may not be formed of the same metal. In one example, the first sublayer 216 may be formed of pure nickel, and the second sublayer 218 may be formed of a nickel-based alloy.

[0029]

[0035] In some embodiments, which can be combined with other embodiments, the first sublayer 216 and the second sublayer 218 have substantially the same porosity. Alternatively, the first sublayer 216 and the second sublayer 218 do not have the same porosity. In one example, the first sublayer 216 may be substantially non-porous, and the second sublayer 218 may have a porosity greater than 0.1%, as described above.

[0030]

[0036] Returning to FIG. 2 , thermal barrier layer 220 is on surface 214 of bond layer 210. Thermal barrier layer 220 includes a ceramic material. The ceramic material includes one or more of a metal oxide, a metal nitride, a metal oxynitride, or a metal oxycarbide. It is contemplated that such compounds include corresponding metalloid compounds, such as silicon oxide. Exemplary ceramic materials for thermal barrier layer 220 include magnesium silicate, zirconia, yttria-stabilized zirconia, hafnia, gadolinia-stabilized hafnia, rare earth zirconates, and silicon oxynitrides.

[0031]

[0037] The thickness 222 of the thermal barrier layer 220 is about 0.5 mm to about 10 mm. For example, the thickness 222 of the thermal barrier layer 220 may be 1 mm to 10 mm, e.g., 1.5 mm to 10 mm, 1.5 mm to 9 mm, 1.5 mm to 8 mm, 2 mm to 8 mm, 2.5 mm to 8 mm, 2.5 mm to 7 mm, 3 mm to 7 mm, 3.5 mm to 7 mm, 3.5 mm to 6 mm, 4 mm to 6 mm, 4.5 mm to 6 mm, or 5 mm to 6 mm.

[0032]

[0038] The thermal barrier layer 220 has an overall thermal conductivity of 20 W / m·K or less. For example, the overall thermal conductivity of the thermal barrier layer 220 may be 18 W / m·K, 16 W / m·K, 14 W / m·K, 12 W / m·K, 10 W / m·K, 8 W / m·K, 6 W / m·K, or 4 W / m·K or less. Furthermore, the overall thermal conductivity of the thermal barrier layer 220 may be between 0.5 W / m·K and 20 W / m·K, e.g., between 1 W / m·K and 20 W / m·K, between 2 W / m·K and 20 W / m·K, between 3 W / m·K and 18 W / m·K, between 4 W / m·K and 16 W / m·K, between 5 W / m·K and 14 W / m·K, between 6 W / m·K and 12 W / m·K, or between 7 W / m·K and 10 W / m·K.

[0033]

[0039] The thermal barrier layer 220 is deposited on the surface 214 of the bonding layer 210 by a thermal spray technique, such as APS. It is contemplated that the thermal barrier layer 220 may additionally or alternatively be deposited on the surface 214 of the bonding layer 210 by a vapor deposition technique, such as electron beam physical vapor deposition (EB-PVD). In some embodiments, which can be combined with other embodiments, the thermal barrier layer 220 is deposited on the surface 214 of the bonding layer 210 by a thermal spray technique in combination with a vapor deposition technique.

[0034]

[0040] The thermal barrier layer 220 is deposited as a single layer on the surface 214 of the bonding layer 210. Alternatively, in some embodiments that can be combined with other embodiments, the thermal barrier layer 220 is deposited in multiple sublayers on the surface 214 of the bonding layer 210. In some embodiments, any one or more of the single layer or multiple sublayers may be of uniform composition. Any one or more of the single layer or multiple sublayers may be of uniform morphology. Alternatively, any one or more of the single layer or multiple sublayers may be of a single phase. Any one or more of the single layer or multiple sublayers may be doped with a secondary ceramic, such as silicon oxide or hafnium oxide. In some embodiments that can be combined with other embodiments, any one or more of the single layer or multiple sublayers may be undoped.

[0035]

[0041] Any one or more of the layer or sublayers may be functionally graded. FIG. 4A schematically illustrates an exemplary functionally graded layer. Layer 230 represents a layer or sublayer of the thermal barrier layer 220. Layer 230 includes pores 232. In a first portion 234 of layer 230, the pores 232 are more numerous and / or larger than the pores 232 in a second portion 236 of layer 230. Porosity ranges from high in the first portion 234 to low in the second portion 236. The first and second portions 234, 236 differ in their proximity to the surface 104 of the metal body 102. In one embodiment, the second portion 236 is farther from the surface 104 of the metal body 102 than the first portion 234. Alternatively, the first portion 234 may be farther from the surface 104 of the metal body 102 than the second portion 236.

[0036]

[0042] FIG. 4B schematically illustrates another exemplary functionally graded layer. Layer 240 is a compositionally graded layer representing a single layer or sublayer of thermal barrier layer 220. Layer 240 is a single-phase ceramic including a first ceramic material 242 doped with a second ceramic material 244. An exemplary single-phase ceramic is yttria-stabilized zirconia (YSZ), where first ceramic material 242 is zirconia and second ceramic material 244 is yttria. In first portion 246 of layer 240, the proportion of second ceramic material 244 is greater than in second portion 248 of layer 240. In the example of YSZ, the proportion of yttria in first portion 246 can be between about 8% and about 20%, and the proportion of yttria in second portion 248 can be between about 0% and about 8%. Second portion 248 is farther from surface 104 of metal body 102 than first portion 246. Alternatively, the first portion 246 may be further from the surface 104 of the metal body 102 than the second portion 248 .

[0037]

[0043] 4C schematically illustrates another exemplary functionally graded layer in which the thermal barrier layer 220 includes multiple sublayers within a laminated ceramic structure 225. While only two sublayers are shown, it is contemplated that the laminated ceramic structure 225 of the thermal barrier layer 220 may include three, four, five, six, seven, or more sublayers. When more than two sublayers are present, it is contemplated that any two sublayers may have the same chemical composition, porosity, porosity distribution, or morphology. It is further contemplated that the laminated ceramic structure 225 of the thermal barrier layer 220 may include a repeating pattern of multiple pairs of two sublayers. In such examples, it is further contemplated that the two sublayers of any pair may have the same chemical composition, porosity, porosity distribution, or morphology.

[0038]

[0044] 4C , the laminated ceramic structure 225 of the thermal barrier layer 220 includes a first sublayer 226 on the surface 214 of the bonding layer 210 and a second sublayer 228 on the first sublayer 226. Each of the first sublayer 226 and the second sublayer 228 is made of a ceramic material. The first sublayer 226 and the second sublayer 228 may have the same chemical composition. The first sublayer 226 and the second sublayer 228 may be formed by the same deposition technique or different deposition techniques. The ceramic of the first sublayer 226 may differ from the ceramic of the second sublayer 228 in at least one of chemical composition, porosity, open porosity, or morphology.

[0039]

[0045] 4D and 4E are schematic diagrams illustrating how the morphology, porosity, and open porosity of a ceramic layer can be related to the technique used to deposit the ceramic. FIG. 4D is a micrograph depiction showing ceramic material 252 deposited on a surface 258 by APS. Many of the pores 232 are surrounded by grains 254 of the ceramic material 252, and much of the pore space is represented as so-called "closed porosity." Very few of the pores 232 are open to the exposed surface 256 of the ceramic material 252, and the pore space represented as so-called "open porosity" is less than the closed porosity.

[0040]

[0046] 4E is a micrograph depiction showing ceramic material 262 deposited by EB-PVD on surface 268. Very few pores 232 are surrounded by grains 264 of ceramic material 262, with much of the pore space represented as open porosity. Many of the pores 232 are open to exposed surface 266 of ceramic material 262, with less pore space represented as closed porosity than open porosity.

[0041]

[0047] Figures 4D and 4E show an example in which the morphology of ceramic material 252 in Figure 4D differs from the morphology of ceramic material 262 in Figure 4E. In Figure 4D, the grains 254 of ceramic material 252 tend to be substantially parallel to the surface 258 on which ceramic material 262 was deposited. In contrast to ceramic material 252 in Figure 4D, the grains 264 of ceramic material 262 in Figure 4E tend to be substantially perpendicular to the surface 268 on which ceramic material 262 was deposited.

[0042]

[0048] 4C , in embodiments in which the ceramic of first sublayer 226 is different from the ceramic of second sublayer 228, it is contemplated that first sublayer 226 may be deposited using one deposition technique and second sublayer 228 may be deposited using another deposition technique, as described above. For example, first sublayer 226 may be deposited using one of APS or EB-PVD, and second sublayer 228 may be deposited using the other of APS or EB-PVD.

[0043]

[0049] 4F and 4G schematically illustrate examples in which the thermal barrier layer 220 includes a laminated metal-ceramic structure 270, 270′. In FIG. 4F, a first ceramic sublayer 271 is deposited on the surface 214 of the bonding layer 210, and a first metal sublayer 272 is deposited on the first ceramic sublayer 271. A second ceramic sublayer 273 is deposited on the first metal sublayer 272. The first ceramic sublayer 271 and the second ceramic sublayer 273 may have the same chemical composition. The first ceramic sublayer 271 and the second ceramic sublayer 273 may be formed by the same deposition technique or different deposition techniques. In some embodiments, which can be combined with other embodiments, the first ceramic sublayer 271 differs from the second ceramic sublayer 273 in at least one of chemical composition, porosity, open porosity, or morphology.

[0044]

[0050] In some embodiments that can be combined with other embodiments, the first metal sub-layer 272 has a similar chemical composition as the bonding layer 210. In some embodiments, the first metal sub-layer 272 has a similar structure as the bonding layer 210. In one example, the first metal sub-layer 272 is a pure metal such as pure nickel or pure titanium. It is contemplated that the pure metal may have a purity of at least 99%, e.g., at least 99.5%, at least 99.6%, at least 99.7%, at least 99.8%, or at least 99.9%. In some embodiments that can be combined with other embodiments, the first metal sub-layer 272 is an alloy, such as a cobalt-based alloy, an iron-based alloy, a nickel-based alloy, or a titanium-based alloy. The metal of the first metal sub-layer 272 is selected at least in part based on the formation of a thermally grown oxide layer on the first metal sub-layer 272 during use of the metal body 102 in processing a substrate, such as the substrate 110. Alternatively, the metal of the first metal sublayer 272 may be selected at least in part based on the fact that a thermally grown oxide layer does not form on the first metal sublayer 272 during use of the metal body 102 in processing a substrate such as the substrate 110.

[0045]

[0051] In FIG. 4G, the laminated metal ceramic structure 270′ includes additional sublayers deposited on the laminated metal ceramic structure 270 of FIG. 4F. FIG. 4G shows a second metal sublayer 274 deposited on the second ceramic sublayer 273. A third ceramic sublayer 275 is deposited on the second metal sublayer 274. In some embodiments that can be combined with other embodiments, the third ceramic sublayer 275 and at least one of the first ceramic sublayer 271 or the second ceramic sublayer 273 have the same chemical composition. The third ceramic sublayer 275 and at least one of the first ceramic sublayer 271 or the second ceramic sublayer 273 are formed by the same or different deposition techniques. In some embodiments that can be combined with other embodiments, the third ceramic sublayer 275 differs from the first ceramic sublayer 271 in at least one of chemical composition, porosity, open porosity, or morphology. In some embodiments, the third ceramic sublayer 275 differs from the second ceramic sublayer 273 in at least one of chemical composition, porosity, open porosity, or morphology.

[0046]

[0052] The second metal sublayer 274 can have a similar chemical composition or structure to the bonding layer 210. Additionally or alternatively, the second metal sublayer 274 has a similar chemical composition to the first metal sublayer 272, and / or the second metal sublayer 274 has a similar structure to the first metal sublayer 272. The second metal sublayer 274 is a pure metal, such as pure nickel or pure titanium. It is contemplated that the pure metal can have a purity of at least 99%, e.g., at least 99.5%, at least 99.6%, at least 99.7%, at least 99.8%, or at least 99.9%. Alternatively, the second metal sublayer 274 can be an alloy, such as a cobalt-based alloy, an iron-based alloy, a nickel-based alloy, or a titanium-based alloy. The metal of second metal sublayer 274 is selected at least in part based on the formation of a thermally grown oxide layer on second metal sublayer 274 during use of metal body 102 in processing a substrate, such as substrate 110. However, the metal of second metal sublayer 274 may be selected at least in part based on the absence of a thermally grown oxide layer on second metal sublayer 274 during use of metal body 102 in processing a substrate, such as substrate 110.

[0047]

[0053] 4G may further include additional metal and ceramic sublayers. In one embodiment, the laminated metal ceramic structure 270' includes one or more pairs of additional sublayers above the third ceramic sublayer 275, each pair including a metal sublayer and a ceramic sublayer above the metal sublayer.

[0048]

[0054] Returning to FIG. 2 , sealing layer 280 is on surface 224 of thermal barrier layer 220. Sealing layer 280 inhibits chemicals, such as gases, from penetrating pores 232 of thermal barrier layer 220. Sealing layer 280 includes a ceramic material. The ceramic material includes one or more of a metal oxide, a metal fluoride, or a metal oxyfluoride. It is contemplated that such compounds include corresponding metalloid compounds, such as silicon oxide. Exemplary ceramic materials for sealing layer 280 include silica, hafnia, zirconia, yttria, magnesium fluoride, yttrium fluoride, lanthanum fluoride, and yttrium oxyfluoride.

[0049]

[0055] The sealing layer 280 is resistant to chemical attack by halogen-containing chemicals, examples of which include halogen acids (e.g., hydrochloric acid, hydrofluoric acid, etc.), halogen gases (e.g., chlorine, fluorine, bromine, chlorofluorides, etc.), gaseous halides (e.g., chlorine trifluoride, carbon tetrafluoride, nitrogen trifluoride, etc.), and plasmas containing such halogen acids, halogen gases, or gaseous halides.

[0050]

[0056] The chemistry and / or structure of sealing layer 280 is selected according to the chemistry of the cleaning and / or process gases used in a processing chamber, such as processing chamber 100. In one example, in applications where chlorine gas is used to clean the processing chamber, sealing layer 280 may include silica. In another example, in applications where chlorine fluoride gas is used to clean the processing chamber, sealing layer 280 may include a ceramic containing hafnium. In a further example, in applications where fluorine-rich gases are used to clean the processing chamber, sealing layer 280 may include a ceramic containing yttrium and / or a metal fluoride and / or a metal oxyfluoride. In further examples, sealing layer 280 may include one or more of silica, hafnia, zirconia, yttria, magnesium fluoride, yttrium fluoride, lanthanum fluoride, and yttrium oxyfluoride.

[0051]

[0057] The thickness 282 of the sealing layer 280 is between about 0.05 microns and about 10 microns. For example, the thickness 282 of the sealing layer 280 may be between 0.1 microns and about 10 microns, such as between 0.1 microns and 9 microns, between 0.1 microns and 8 microns, between 0.1 microns and 7 microns, between 0.1 microns and 6 microns, between 0.1 microns and 5 microns, between 0.1 microns and 4 microns, between 0.1 microns and 3 microns, between 0.1 microns and 2 microns, or between 0.1 microns and 1 micron.

[0052]

[0058] Sealing layer 280 is substantially non-porous. In one embodiment, sealing layer 280 has a porosity of 0.1% or less, such as 0.05% or less, or 0.01% or less, or 0%.

[0053]

[0059] The sealing layer 280 is deposited on the surface 224 of the thermal barrier layer 220 by a physical vapor deposition (PVD) technique, such as ion-assisted deposition, magnetron sputtering, or ion beam sputtering. Additionally or alternatively, the sealing layer 280 may be deposited on the surface 224 of the thermal barrier layer 220 by a chemical vapor deposition (CVD) technique, such as atomic layer deposition. In some embodiments, the sealing layer 280 is deposited on the surface 224 of the thermal barrier layer 220 by a PVD technique in combination with a CVD technique.

[0054]

[0060] 5A-5E schematically illustrate embodiments of a sealing layer 280. FIG. 5A illustrates that the surface 224 of the thermal barrier layer 220 is irregular. The thermal barrier layer 220 includes pores 232, some of which are open at the surface 224. The sealing layer 280 is conformally deposited on the thermal barrier layer 220 such that the sealing layer 280 conforms to the irregularities in the surface 224 of the thermal barrier layer 220. As illustrated, it is envisioned that the sealing layer 280 can bridge the open pores 232 at the surface 224 of the thermal barrier layer 220. In some embodiments, the sealing layer 280 can at least partially penetrate the open pores 232 at the surface 224 of the thermal barrier layer 220.

[0055]

[0061] The sealing layer 280 may be deposited as a single layer or multiple sublayers on the surface 224 of the thermal barrier layer 220. Any one or more of the single layer or multiple sublayers may be of uniform composition and / or uniform morphology.

[0056]

[0062] In some embodiments, which can be combined with other embodiments, any one or more of the sublayers may be functionally and / or compositionally graded. Figure 5B schematically illustrates an exemplary structure 285 of sealing layer 280. Structure 285 is functionally and / or compositionally graded, having a thermal expansion coefficient equal to or less than that of the underlying thermal barrier layer 220. Structure 285 includes a first sublayer 286 on surface 224 of thermal barrier layer 220 and a second sublayer 288 on first sublayer 286. Each of first sublayer 286 and second sublayer 288 is made of a ceramic material (e.g., a ceramic material selected from the examples of ceramic materials listed above).

[0057]

[0063] The first sublayer 286 and the second sublayer 288 have different chemical compositions. In one example, one of the first sublayer 286 or the second sublayer 288 is silica, and the other of the first sublayer 286 or the second sublayer 288 is hafnia. In another example, one of the first sublayer 286 or the second sublayer 288 is zirconia, and the other of the first sublayer 286 or the second sublayer 288 is yttria. In a further example, one of the first sublayer 286 or the second sublayer 288 is hafnia, and the other of the first sublayer 286 or the second sublayer 288 is yttria.

[0058]

[0064] 5C schematically illustrates another exemplary structure 290 of the sealing layer 280. In some embodiments, the structure 290 is functionally graded and / or compositionally graded. In some embodiments, which can be combined with other embodiments, the structure 290 has a thermal expansion coefficient equal to or less than that of the underlying thermal barrier layer 220. The structure 290 includes a first sublayer 291 on the surface 224 of the thermal barrier layer 220, a second sublayer 292 on the first sublayer 291, and a third sublayer 293 on the second sublayer 292. Each of the first sublayer 286, the second sublayer 288, and the third sublayer 293 is made of a ceramic material (e.g., a ceramic material selected from the examples of ceramic materials listed above). The first sublayer 286, the second sublayer 288, and the third sublayer 293 have different chemical compositions.

[0059]

[0065] 5D schematically illustrates another exemplary structure 295 of the sealing layer 280. In some embodiments, which can be combined with other embodiments, the structure 295 is functionally graded and / or compositionally graded. The structure 295 is a layered structure, such as a nanolaminate, that includes multiple stacks of the structures 285 of FIG. 5B , with the first sublayer 286 of one structure 285 deposited on the second sublayer 288 of another structure 285. In some embodiments, which can be combined with other embodiments, the thickness of any one or more of the first sublayer 286 or second sublayer 288 of any one of the structures 295 is 50 nm or less, e.g., 40 nm or less, 30 nm or less, 20 nm or less, 15 nm or less, 10 nm or less, or 5 nm or less. In some embodiments, which can be combined with other embodiments, the morphology of any one or more of the first sublayer 286 or second sublayer 288 of any one of the structures 295 changes as the thickness increases.

[0060]

[0066] 5E schematically illustrates another exemplary structure 297 of sealing layer 280. In some embodiments, which can be combined with other embodiments, structure 297 is functionally graded and / or compositionally graded. Structure 297 is a layered structure, such as a nanolaminate, that includes multiple stacks of structures 290 of FIG. 5C , with the first sublayer 291 of one structure 290 deposited on the third sublayer 293 of another structure 290. In some embodiments, which can be combined with other embodiments, the thickness of any one or more of first sublayer 291, second sublayer 292, or third sublayer 293 of any structure 290 of structure 297 is 50 nm or less, e.g., 40 nm or less, 30 nm or less, 20 nm or less, 15 nm or less, 10 nm or less, or 5 nm. In some embodiments, which can be combined with other embodiments, the morphology of any one or more of first sublayer 291, second sublayer 292, or third sublayer 293 in any structure 290 of structure 297 changes as the thickness increases.

[0061]

[0067] In some embodiments, it is contemplated that the coating 200 may be repaired. In one example, the sealing layer 280 is removed from the metal body 102 of the chamber component, such as by an ultrasonic cleaning system or plasma cleaning tool, to expose the existing underlying thermal barrier layer 220. A new sealing layer 280 is then deposited over the existing underlying thermal barrier layer 220.

[0062]

[0068] In another example, weakened (or otherwise damaged) portions of the coating 200 can be removed from the metal body 102 of the chamber component, such as with a mechanical or chemical-mechanical abrasive tool. A new bond layer 210 can be applied to any exposed surface 104 of the metal body 102. If a portion of the existing thermal barrier layer 220 remains, masking can prevent the new bond layer 210 from contacting the existing thermal barrier layer 220. Alternatively, the new bond layer 210 can be applied to the existing thermal barrier layer 220 to function as a metal sublayer in a metal-ceramic stack. In some embodiments that can be combined with other embodiments, such as when there is no exposed surface 104 of the metal body 102, the new bond layer 210 is omitted. A new thermal barrier layer 220 is applied. In some embodiments that can be combined with other embodiments, the new thermal barrier layer 220 is applied over the existing seal layer 280. The new seal layer 280 is applied over the new thermal barrier layer 220.

[0063]

[0069] It is envisioned that embodiments of the coating 200 of the present disclosure may provide multiple benefits to the operation of a processing chamber, such as the processing chamber 100. One benefit is that the coating 200 provides a thermal barrier that inhibits heat transfer from the processing space 140 of the processing chamber 100 to the metal body 102 of the chamber component. In one example, without the coating 200, heat dissipation to the walls of the chamber body 170 can cause the edge of a substrate being processed to cool relative to the center of the substrate. Such temperature non-uniformity can adversely affect the quantity and quality of chemical deposition at the edge of the substrate and negatively impact product yield from the substrate. However, the coating 200 of the present disclosure, when applied to the interior walls of the chamber body 170, impedes heat transfer to the chamber body 170, promoting more uniform substrate temperatures and mitigating the above-mentioned problems. A further benefit is that the coating 200 aids in temperature management of the substrate while saving operators costs, such as costs associated with providing additional heating to the substrate.

[0064]

[0070] Another advantage of embodiments of the coating 200 of the present disclosure is that it protects the metal body 102 of the chamber component from corrosion, such as corrosion caused by cleaning gases and / or process gases. In one example, certain halogen cleaning gases (e.g., chlorine) can be applied to the processing chamber 100 more cost-effectively than other cleaning gases (e.g., hydrochloric acid), but the walls of the chamber body 170 are susceptible to corrosion by the halogen cleaning gases. This vulnerability to corrosion is exacerbated for chamber bodies 170 made of stainless steel, such as 316L. Conventional thermal barrier coatings do not provide corrosion protection because (i) the bond layer of such conventional coatings typically does not form a thermally grown oxide layer when used in a processing environment, and (ii) the open porosity of the thermal barrier layer of such conventional coatings provides a path for gases (e.g., cleaning gases) to contact the unprotected bond layer and the underlying metal body of the chamber wall.

[0065]

[0071] In contrast, the bond layer 210 of the coating 200 of the present disclosure may be selected based on (i) its resistance to corrosion by halogen-containing chemicals being greater than that of the metal body 102 of the chamber component (e.g., the wall of the chamber body 170), and (ii) its resistance to corrosion despite not forming a thermally grown oxide layer when used in a processing environment. Furthermore, the sealing layer 280 of the coating 200 of the present disclosure is resistant to attack from cleaning gases while preventing the passage of gases to the thermal barrier layer 220. Gases, such as cleaning gases, are prevented from migrating to or contacting the metal body 102 of the chamber component, protecting the chamber component from corrosion.

[0066]

[0072] A further advantage of embodiments of the coating 200 of the present disclosure is that by providing protection against corrosion by halogen gases and gaseous halides, cleaning operations can be tailored to different process environments. For example, in some operations, it is preferable to use chlorine gas as the cleaning gas instead of gaseous hydrochloric acid because chlorine gas can be more effective at lower temperatures than gaseous hydrochloric acid. However, the use of chlorine gas can be more harmful to chamber components, particularly stainless steel parts. The corrosion protection provided by the use of the coating 200 of the present disclosure facilitates the use of chlorine gas for cleaning, offering the advantages of shorter cycle times and reduced heating costs compared to cleaning operations using gaseous hydrochloric acid.

[0067]

[0073] An additional benefit of embodiments of the presently disclosed coating 200 is reduced contamination of substrates compared to other processing environments that do not incorporate the presently disclosed coating 200. When chamber components, such as the walls of the chamber body 170, are subject to corrosion, metal particles and corrosion products from the chamber components can be released into the processing space 140 during processing operations and deposit on the substrate, contaminating structures formed on the substrate. Such contamination can adversely affect product quality and yield from the substrate.

[0068]

[0074] However, the corrosion protection provided by the coating 200 of the present disclosure prevents the generation of metal particles and corrosion products from the coated chamber components, reducing contamination of substrates during processing.

[0069]

[0075] It is contemplated that elements and features of any one disclosed embodiment may be beneficially incorporated in one or more other embodiments. While the above description is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, the scope of which is determined by the claims that follow.

Claims

1. 1. A substrate processing chamber component comprising: A metal body; a metal bonding layer deposited on the surface of the metal body; a thermal barrier layer deposited on the bonding layer; a substantially non-porous ceramic sealing layer deposited on the thermal barrier layer; 1. A substrate processing chamber component comprising:

2. 10. The substrate processing chamber component of claim 1, wherein the bond layer comprises at least one of pure nickel, pure titanium, a cobalt-based alloy, an iron-based alloy, a nickel-based alloy, a titanium-based alloy, or a composite of ceramic particulate dispersed in a metal matrix.

3. 10. The substrate processing chamber component of claim 1, wherein the bonding layer has a coefficient of thermal expansion that is less than a coefficient of thermal expansion of the metal body and greater than or equal to a coefficient of thermal expansion of the thermal barrier layer.

4. the thermal barrier layer comprises a single-phase ceramic structure comprising a primary ceramic doped with a secondary ceramic; the proportion of the secondary ceramic varies from a first degree at a first location to a second degree at a second location; the second rate is lower than the first rate; The substrate processing chamber component of claim 1 , wherein the first location and the second location differ in proximity to the surface of the metal body.

5. The thermal barrier layer comprises one or more pairs of sublayers, each pair of sublayers comprising: a first sublayer comprising a first ceramic; and a second sublayer comprising a second ceramic; The first ceramic is different from the second ceramic. chemical composition, porosity, open porosity, or form The substrate processing chamber components of claim 1 , wherein the components differ in at least one of:

6. The thermal barrier layer is a first sublayer comprising a first ceramic; a second sublayer comprising a first metal on the first sublayer; a third sublayer comprising a second ceramic on the second sublayer; and The substrate processing chamber component of claim 1 , comprising:

7. The substrate processing chamber component of claim 6 , wherein the first ceramic and the second ceramic have the same chemical composition.

8. The first ceramic and the second ceramic are chemical composition, porosity, open porosity, or form The substrate processing chamber components of claim 6 , wherein the components differ in at least one of:

9. The thermal barrier layer further comprises one or more pairs of additional sublayers on the third sublayer, each pair of additional sublayers comprising: a fourth sublayer comprising a second metal; and a fifth sublayer comprising a third ceramic on the fourth sublayer; The substrate processing chamber component of claim 6 , comprising:

10. The substrate processing chamber component of claim 1 , wherein the thermal barrier layer comprises at least one of a metal oxide, a metal nitride, a metal oxynitride, or a metal oxycarbide.

11. The substrate processing chamber component of claim 1 , wherein the ceramic sealing layer comprises at least one of a metal oxide, a metal fluoride, or a metal oxyfluoride.

12. 12. The substrate processing chamber component of claim 11, wherein the ceramic sealing layer comprises at least one of silica, hafnia, zirconia, yttria, magnesium fluoride, yttrium fluoride, lanthanum fluoride, or yttrium oxyfluoride.

13. The ceramic sealing layer is a first sublayer comprising a first ceramic; a second sublayer comprising a second ceramic of a different chemical composition than the first ceramic; The substrate processing chamber component of claim 1 , comprising:

14. 14. The substrate processing chamber component of claim 13, wherein the ceramic sealing layer further comprises a third sub-layer comprising the first ceramic deposited on the second sub-layer.

15. 1. A substrate processing chamber component comprising: a body including stainless steel; a metallic bond layer of a first thickness deposited on a surface of the body, the metallic bond layer having a corrosion resistance to halogen-containing chemicals that is greater than a corrosion resistance of the body to halogen-containing chemicals; a thermal barrier layer of a second thickness deposited on the bonding layer, the second thickness being greater than the first thickness; and a substantially non-porous ceramic sealing layer of a third thickness deposited on the thermal barrier layer, the third thickness being less than the first thickness; 1. A substrate processing chamber component comprising:

16. 16. The substrate processing chamber component of claim 15, wherein the thermal barrier layer has an overall thermal conductivity of 20 W / m·K or less.

17. The substrate processing chamber component of claim 15 , wherein the third thickness is between 0.05 microns and 10 microns.

18. 16. The substrate processing chamber component of claim 15, wherein the ceramic sealing layer is resistant to corrosion by halogen-containing chemicals.

19. 16. The substrate processing chamber component of claim 15, wherein the ceramic sealing layer is conformally deposited on the thermal barrier layer by one of atomic layer deposition or ion beam sputtering.

20. 1. A substrate processing chamber component comprising: A metal body; a metal bonding layer deposited on the surface of the metal body; a thermal barrier layer deposited on the bonding layer; a ceramic sealing layer deposited on the thermal barrier layer; The ceramic sealing layer comprises: a first sublayer comprising a first ceramic; a second sublayer comprising a second ceramic; and a third sublayer comprising a third ceramic; wherein the second ceramic is of a different chemical composition than the first ceramic and the third ceramic.

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