Substrate Processing Apparatus

Abstract

A substrate processing apparatus according to one embodiment of the present invention includes a chamber having a sidewall, a susceptor having an inclined side surface and for mounting a substrate inside the chamber, an upper dome covering an upper surface of the chamber and formed of a dielectric material, a lower dome covering a lower surface of the chamber and formed of a dielectric material, and a liner disposed inside the chamber and between the upper dome and the lower dome. The liner includes a sloped portion with a sloped inner surface that faces the sloped side surface of the susceptor.

Description

[Technical Field]

[0001] The present invention relates to a substrate processing apparatus, and more particularly to an epitaxial plasma chemical vapor deposition apparatus that deposits a thin film by rapidly heating a substrate at a high temperature using a lamp heater. [Background technology]

[0002] In semiconductor manufacturing, a silicon single crystal thin film with the same crystalline structure as the silicon single crystal substrate is deposited on the silicon single crystal substrate. During the growth of the silicon single crystal thin film, an inorganic insulating material such as silicon oxide is deposited and patterned, and a single crystal region is formed only on the exposed silicon portion of the substrate surface. This is called selective epitaxial growth (SEG).

[0003] In addition, thin-film solar cells fabricated on a large-area substrate are based on a P layer that receives sunlight, an I layer that forms electron-hole pairs, and an N layer that acts as an opposing electrode for the P layer. Similarly, liquid crystal displays are based on array elements and color filter elements formed on array and color filter substrates, respectively.

[0004] The fabrication of thin film elements for solar cells and liquid crystal displays requires multiple photolithography processes, including thin film deposition, photosensitive layer coating, exposure and development, and etching, as well as various other processes such as cleaning, bonding, and cutting.

[0005] In the plasma enhanced chemical vapor deposition (PECVD) method, a thin film is formed by applying a high RF (Radio Frequency) voltage to an antenna or an electrode to excite a reactive gas into a plasma state inside a chamber.

[0006] Recently, in order to prevent foreign particles and by-products generated during the deposition process using plasma chemical vapor deposition from adhering to the inner walls of the chamber, the inner walls are designed with quartz, and upper and lower domes are designed at the top and bottom of the chamber, both of which are made of quartz.

[0007] The deposition process using plasma enhanced chemical vapor deposition (PECVD) maintains the pressure inside the chamber at several mTorr, and maintains an ultra-high vacuum of 10E-9 Torr at the base vacuum level, thereby minimizing the number of foreign particles and by-products generated during the deposition process and shortening the deposition process time, which has the advantage of improving production yield.

[0008] In such a plasma enhanced chemical vapor deposition method, process gas injected into an upper space between the upper dome and the susceptor flows into a lower space below the susceptor, causing foreign matter and by-products. DISCLOSURE OF THE INVENTION [Problem to be solved by the invention]

[0009] The technical problem to be solved by the present invention is to provide a method for preventing process gas injected into an upper space between the upper dome and the susceptor from flowing into a lower space below the susceptor by using the structure of a liner disposed between the upper dome and the lower dome and the shape of the susceptor. [Means for solving the problem]

[0010] A substrate processing apparatus according to an embodiment of the present invention includes a chamber having a sidewall, a susceptor having a sloped side surface and configured to support a substrate inside the chamber, an upper dome covering an upper surface of the chamber and formed of a dielectric material, a lower dome covering a lower surface of the chamber and formed of a dielectric material, and a liner disposed inside the chamber and between the upper dome and the lower dome, wherein the liner includes a sloped portion having a sloped inner surface facing the sloped side surface of the susceptor.

[0011] In one embodiment of the present invention, a first inclination angle of the inclined side surface of the susceptor is the same as a second inclination angle of the inclined portion of the liner.

[0012] In one embodiment of the present invention, the first tilt angle and the second tilt angle are 70 degrees.

[0013] In one embodiment of the present invention, the liner includes an upper liner having a first inner diameter and disposed adjacent to the upper dome, and a lower liner continuously connected to the upper liner and having the sloped portion where the inner diameter increases. The lower liner is disposed adjacent to a lower surface of the upper liner and includes a first opening for exhausting gas and a second opening on the other side opposite the first opening to provide a passage for a substrate.

[0014] In one embodiment of the present invention, the thickness of the susceptor is greater than the height of the first opening or the height of the second opening.

[0015] In one embodiment of the present invention, when the susceptor is in a process position, the distance between the inclined portion of the lower liner and the inclined side surface of the susceptor is 1 mm to 3 mm.

[0016] In one embodiment of the present invention, when the susceptor is in a lowered position, the distance between the inclined portion of the lower liner and the inclined side of the susceptor is 7 mm to 13 mm.

[0017] In one embodiment of the present invention, the liner further includes a curved connection portion between the upper liner and the lower liner.

[0018] In one embodiment of the present invention, the diameter of the connection portion is larger than the diameter of the upper surface of the susceptor and smaller than the diameter of the lower surface of the susceptor.

[0019] In one embodiment of the present invention, the susceptor includes a curved portion that is curved on an upper surface of the susceptor, and the inclined side surface that is continuously connected to the curved portion.

[0020] In one embodiment of the present invention, the susceptor includes a curved portion on the upper surface of the susceptor and the inclined side surface continuously connected to the curved portion, and the curved portion of the susceptor faces the connection portion of the liner.

[0021] In one embodiment of the present invention, the vertical distance between the curved surface of the susceptor and the connecting portion of the liner is 4 mm to 7 mm.

[0022] In one embodiment of the present invention, the susceptor is made of ceramic or graphite, and the thickness of the susceptor is 30 mm or more.

[0023] In one embodiment of the present invention, when the susceptor is in a process position, an upper space between the susceptor and the upper dome is smaller than a lower space between the lower dome and the susceptor. [Effects of the Invention]

[0024] The substrate processing apparatus according to an embodiment of the present invention minimizes the amount of process gas flowing into the lower space, thereby minimizing the formation of foreign particles and by-products, and performing stable plasma enhanced chemical vapor deposition. BEST MODE FOR CARRYING OUT THE INVENTION

[0025] To grow silicon-germanium single crystal or silicon single crystal on a substrate, a high process temperature of around 900 degrees Celsius is usually required. Semiconductor manufacturing using this selective epitaxial growth method has the advantage of facilitating the fabrication of semiconductor devices with three-dimensional structures such as FIN-FETs, which are difficult to fabricate using existing flat-plate technology.

[0026] Chemical vapor deposition apparatuses with upper and lower domes use liners to prevent unwanted deposition of thin films on the interior walls of the chamber, and the liners are periodically replaced or cleaned.

[0027] In a chemical vapor deposition apparatus having an upper dome and a lower dome according to an embodiment of the present invention, a process gas is injected into an upper space defined by the upper dome and the susceptor, and the process gas is exhausted through an opening in a liner connected to the upper space. When the process gas supplied to the upper space flows into the lower space defined by the lower dome and the susceptor, an abnormal thin film is deposited on the lower dome and the liner.

[0028] The liner of the present invention includes an upper liner having a constant inner diameter, a lower liner that is continuously connected to the upper liner and has a constant inclination angle and an increasing inner diameter, and a connecting portion having a curve between the upper liner and the lower liner.

[0029] The susceptor of the present invention has a thickness of 30 mm or more, the side surface of the susceptor has an inclined angle, and the liner has an inclined portion to maintain a certain distance from the inclined side surface of the susceptor.

[0030] When the susceptor is in the process position (or raised position) to process a substrate, the susceptor rises to the connection portion of the liner. The distance (or gap) between the lower liner and the inclined side of the susceptor is maintained at approximately 2 mm. This narrow gap provides a small conductance, preventing the process gas from moving from the upper space to the lower space.

[0031] A first opening for exhausting process gas and a second opening for the ingress and egress of substrates are formed in the lower liner and contact the connection portion. Therefore, when the susceptor is in the process position, the inclined side of the susceptor faces the first and second openings, substantially closing the first and second openings. However, the connection portion forms a space on the upper side of the susceptor, and the connection portion and the first opening provide a passage for exhausting the process gas.

[0032] The susceptor has a sufficient thickness and is greater than the height of the first opening. In the process position, the upper surface of the susceptor is set to be substantially the same as the upper surface of the first opening, and the lower surface of the susceptor is set to be lower than the lower surface of the first opening. The distance between the inclined side of the susceptor and the lower liner is maintained at about 2 mm. Therefore, the process gas flowing toward the first opening does not flow into the lower space due to its low conductance.

[0033] The susceptor of the present invention has a thickness and sloped sidewalls sufficient to conceal the first opening, preventing process gas injected into the upper space from flowing into the lower space. This prevents the lower space from generating abnormal thin films and foreign particles. In addition, the sloped sidewalls of the susceptor prevent infrared lamps from flowing into the upper space, allowing the susceptor to be heated efficiently.

[0034] According to the present invention, the susceptor is rotated for process uniformity.

[0035] According to the present invention, a purge gas is supplied to the lower dome and a process gas is supplied to the upper space between the upper dome and the susceptor, thereby preventing the process gas from flowing into the lower dome and suppressing deposition of an abnormal thin film on the lower dome.

[0036] According to the present invention, when the susceptor is in a process position, the upper space is smaller than the lower space, and therefore the height of the lower liner is greater than the height of the upper liner. As the upper space decreases, the deposition rate increases.

[0037] In the present invention, the lower liner has an inclined surface so that purge gas supplied from the lower dome is injected toward the upper dome and more lamp heaters can be installed. The gap between the susceptor and the lower liner is maintained narrow, and the purge gas supplied from the lower dome is injected toward the upper dome, causing a pressure difference. Due to the narrow gap between the susceptor and the lower liner, the process gas injected into the upper dome remains only within the upper space, preventing contamination of the lower space.

[0038] In the present invention, the inductively coupled plasma antenna is positioned at a distance from the upper dome. The conductors constituting the antenna are stripline-shaped, and the striplines are aligned vertically across their widths. This minimizes infrared radiation incident from the lower dome onto the antenna. This reduces heating caused by infrared radiation, and minimizes shadows cast by infrared radiation reflected from the electromagnetic wave shielding housing.

[0039] In the present invention, the electromagnetic wave shielding housing that covers the antenna and provides electromagnetic shielding is gold-plated, which reflects infrared rays and causes them to re-enter the substrate. In addition, the electromagnetic wave shielding housing is cylindrical rather than dome-shaped, which reduces re-entering heating of the antenna due to reflected infrared rays.

[0040] In the present invention, the lamp heaters arranged under the lower dome are ring-shaped lamp heaters, and there are a plurality of them. The ring-shaped lamp heaters are grouped together and independently control power to heat the substrate uniformly.

[0041] In the present invention, a turbomolecular pump (TMP) connected to the exhaust section of the chamber maintains a base vacuum inside the chamber and generates stable plasma at a pressure of a few Torr or less during processing.

[0042] The plasma-assisted chemical vapor deposition of the present invention reduces performance degradation due to infrared heating of the inductively coupled plasma antenna disposed on the upper dome, and also provides infrared rays reflected from the electromagnetic wave shielding housing back to the substrate, forming a uniform thin film on the substrate at high speed.

[0043] When a lamp heater is used for process temperatures of around 900°C, the antenna that forms the inductively coupled plasma within the process chamber is heated by the lamp heater, and its resistance increases as the temperature rises. As a result, the antenna consumes energy through ohmic heating, preventing efficient inductively coupled plasma formation. Furthermore, the antenna casts a shadow on the infrared rays reflected from the electromagnetic wave shielding housing, causing temperature non-uniformity on the substrate. To ensure process stability, the electromagnetic wave shielding housing is heated to maintain the antenna at a constant temperature while shielding the electromagnetic waves.

[0044] In addition, the electromagnetic shielding housing surrounding the antenna reflects a portion of the infrared rays emitted from the lamp heater, while the remaining infrared rays are absorbed by the electromagnetic shielding housing, causing heating and reducing reliability. Spatially non-uniform temperature distribution in the electromagnetic shielding housing results in spatially non-uniform blackbody radiation. Therefore, a separate resistance heater is used to heat the electromagnetic shielding housing to a uniform temperature, providing spatially uniform blackbody radiation. The electromagnetic shielding housing is heated to 200 to 600 degrees Celsius, and direct thermal contact with the chamber increases heat loss. Therefore, the electromagnetic shielding housing is insulated from the chamber to minimize heat loss. That is, an insulating spacer is disposed between the electromagnetic shielding housing and the chamber to reduce heat loss from the electromagnetic shielding housing. Meanwhile, the electromagnetic shielding housing is electrically grounded through a separate conductive line. The insulating spacer is ring-shaped and made of ceramic material. The insulating spacer is made of porous ceramic material.

[0045] The present invention will now be described in more detail with reference to the accompanying drawings. The present invention will be described in more detail below with reference to preferred embodiments. However, it will be apparent to those skilled in the art that the embodiments are provided solely for the purpose of illustrating the present invention, and that the present invention is not limited to or restricted by experimental conditions, types of materials, or the like. The present invention is not limited to the embodiments described herein, and may be embodied in other forms. Rather, the embodiments described herein are provided so that the disclosure will be thorough and complete, and will fully convey the concept of the present invention to those skilled in the art. In the drawings, the dimensions of elements may be exaggerated for clarity. The same elements will be designated by the same reference numerals throughout the specification.

[0046] FIG. 1 is a conceptual diagram illustrating the position of a home in a plasma enhanced chemical vapor deposition apparatus according to an embodiment of the present invention.

[0047] FIG. 2 is a conceptual diagram illustrating the ascending position in the plasma enhanced chemical vapor deposition apparatus of FIG.

[0048] FIG. 3 is a schematic diagram illustrating the plasma enhanced chemical vapor deposition apparatus of FIG. 1 cut in another direction.

[0049] FIG. 4 is a cutaway perspective view illustrating the liner, susceptor, and lower dome of the plasma enhanced chemical vapor deposition apparatus of FIG.

[0050] 1 to 4, a plasma enhanced chemical vapor deposition apparatus 100 according to an embodiment of the present invention includes a chamber 160 with sidewalls, a susceptor 172 with inclined sides for mounting a substrate inside the chamber, an upper dome 152 made of a dielectric material and covering the upper surface of the chamber 160, a lower dome 158 made of a dielectric material and covering the lower surface of the chamber, and a liner 180 disposed inside the chamber and between the upper dome 152 and the lower dome 158. The liner 190 includes an inclined portion 195 with an inclined inner surface facing the inclined side surface 172a of the susceptor.

[0051] The chamber 160 is made of a conductive material, has a cylindrical interior, and a rectangular exterior. The chamber 160 is cooled by cooling water. The chamber 160, the upper dome 152, and the lower dome 158 are combined to form a sealed space. The chamber 160 includes a substrate inlet / outlet 160a formed on a side of the chamber and an exhaust port 160b formed on the side opposite the substrate inlet / outlet. The exhaust port 160b is connected to a high vacuum pump 10. The high vacuum pump 10 is a turbomolecular pump. The high vacuum pump maintains a low base pressure, maintaining a pressure of several Torr or less during processing. The top surface of the exhaust port 160b is at the same level as or lower than the top surface of the substrate inlet / outlet 160a.

[0052] For example, if the top surface of the exhaust port 160b is flush with the top surface of the substrate inlet / outlet 160a, the top surface of the susceptor is moved to the same position as the bottom surfaces of the exhaust port 160b and the substrate inlet / outlet during processing, thereby improving symmetry within the chamber and the flow of process gases, thereby providing uniform thin film deposition.

[0053] The susceptor 172 receives the substrate 174 when it is drawn in through a substrate inlet / outlet 160a formed in the side of the chamber. The susceptor 172 is disk-shaped and has a thickness of 30 mm or more. Preferably, the susceptor 172 has a thickness H1 of 40 mm or more. The susceptor includes a curved portion 172 curved on the upper surface of the susceptor and the inclined side surface 172a connected continuously to the curved portion. The inclined side surface 172a of the susceptor has a first inclination angle of 70 degrees. The thickness H1 of the susceptor is greater than the height H2 of the first opening or the height H2 of the second opening.

[0054] The susceptor 172 is plate-shaped like the substrate and is made of ceramic or graphite, which has excellent thermal conductivity. The susceptor 172 is heated by infrared rays incident from below and heats the substrate 174 through heat transfer. During processing, the top surface of the susceptor is substantially flush with the top surfaces of the exhaust port and the substrate inlet / outlet. The susceptor 172 rotates to improve azimuthal symmetry.

[0055] The first lifter 184 extends along the central axis of the lower dome 158 and includes a tripod-shaped first lifter body and a first lift pin. The first lifter 184 and the second lifter 182 have a coaxial structure. When the substrate 174 is transferred into the chamber, the first lifter 184 rises from a lowered position or a home position to support the substrate. Then, the first lifter 184 descends to lower the substrate onto the susceptor 174. The first lifter 184 is made of quartz or metal. The first lifter 184 moves vertically via a drive shaft.

[0056] The second lifter 182 extends along the central axis of the lower dome 158 and includes a tripod-shaped second lifter body and second lift pins. The second lifter 182 raises the susceptor 172, on which the substrate is mounted, from a home position (or lowered position) to a process position (or raised position). The upper surface of the susceptor 172 is substantially flush with the upper surface of the second opening 194b in the liner 190 for substrate inflow in the process position. The upper surface of the susceptor 172 is also substantially flush with the upper surface of the opening 194a in the liner 190 for gas exhaust in the process position. Therefore, the inclined side surface 172a of the susceptor 172 is positioned to block the first opening 194a and the second opening 194b. The second lifter 182 is made of quartz or metal. The second lifter 182 moves vertically via a drive shaft. The second lifter 182 rotates to rotate the susceptor.

[0057] The upper dome 152 is made of a dielectric material such as quartz or sapphire. The upper dome 152 is inserted into a recess formed on the upper surface of the chamber 160 and coupled thereto. The coupling portion of the upper dome 152 that couples with the chamber 160 for vacuum sealing is washer-shaped. The upper dome 152 is arc-shaped or elliptical-shaped. The upper dome 152 transmits infrared rays incident from below. Infrared rays reflected from the electromagnetic wave shielding housing 130 pass through the upper dome 152 and re-enter the substrate 174.

[0058] The lower dome 158 is made of a dielectric material such as quartz or sapphire. The lower dome 158 includes a funnel-shaped lower dome body 158b, a washer-shaped coupling portion 158a that couples to a recess formed in the lower surface of the chamber, and a cylindrical pipe 158c connected to the center of the lower dome body 158b. The lower dome 158 is inserted into the recess formed in the lower surface of the chamber. The coupling portion 158a of the lower dome 158 that couples to the chamber for vacuum sealing is washer-shaped. The drive shafts of the first and second lifters are inserted into the cylindrical pipe 158c. Purge gas is supplied through the lower dome via a flow path. The flow path is the cylindrical pipe 158c. The purge gas is an inert gas such as argon or nitrogen. The purge gas prevents process gas from being injected into the space below the susceptor.

[0059] A liner 190 is disposed inside the chamber and between the upper dome 152 and the lower dome 158. The liner 190 includes an inclined portion 195 with an inclined inner surface. A second inclination angle of the liner inclined portion 195 is the same as the first inclination angle of the susceptor inclined side surface 172a. The first and second inclination angles are 70 degrees. When the first and second inclination angles are the same, the susceptor inclined side surface 172a and the liner inclined portion 195 maintain a constant distance. When the susceptor is in a process position, the susceptor inclined side surface 172a and the liner inclined portion 195 maintain a minimum distance of about 2 mm.

[0060] The liner 190 includes an upper liner 192 having a first inner diameter D1 and disposed adjacent to the upper dome, and a lower liner 194 connected to the upper liner 192 and having a sloped portion 195 where the inner diameter increases. The lower liner 194 is disposed adjacent to the lower surface of the upper liner 192 and includes a first opening 194a for exhausting gas and a second opening 194b on the other side opposite the first opening 194a to provide a passage for a substrate. The liner 190 further includes a curved connection portion 196 between the upper and lower liners. The upper liner 192 and the lower liner 194 are integrally formed. The liner 190 includes an upper liner 192 having a constant inner diameter, a junction portion 196 where the diameter increases due to curvature at the upper liner, and a lower liner 194 having a constant slope at the junction portion.

[0061] When the susceptor 172 is in the lowered position, the distance between the inclined portion 195 of the lower liner and the inclined side surface 172a of the susceptor is between 7 mm and 13 mm, preferably about 11 mm.

[0062] When the susceptor 172 is in the raised position, the distance between the susceptor's inclined side 172a and the liner's inclined portion 195 is 1 to 3 mm, preferably 2 mm. This narrow distance reduces the cross-sectional area through which fluid flows, providing low conductance. A susceptor thickness of several tens of millimeters or more provides lower conductance to the fluid.

[0063] When the susceptor 172 is in the raised position, the vertical distance between the curved portion 172b of the susceptor 172 and the connection portion 196 of the liner is 4 mm to 7 mm, preferably 5.7 mm. The outer diameter of the upper surface of the susceptor 172 is substantially the same as or several millimeters larger than the inner diameter D1 of the upper liner 192. When the susceptor 172 is raised and the upper surface of the susceptor 172 is flush with the first opening, the connection portion 196 provides an exhaust passage through which process gas can flow to the first opening.

[0064] The liner 190 is a transparent or opaque dielectric material. The liner 190 is made of quartz, alumina, sapphire, or aluminum nitride. The liner 190 is selected as a material that suppresses the deposition of abnormal thin films. If the liner 190 becomes contaminated, it can be disassembled and cleaned.

[0065] The upper liner 192 has an overall ring shape, and the upper surface of the upper liner 192 is a curved surface having the shape of the upper dome. The outer upper surface of the upper liner 192 has a flat portion. The inner diameter of the upper liner 192 is D1.

[0066] The upper liner 192 includes at least one process gas supply part 159a, 159b that supplies a process gas through a side surface of the upper liner 192. The process gas supply parts 159a, 159b protrude from the inner surface of the upper liner 172. For example, the process gas supply parts include a first process gas supply part 159a that supplies a first process gas, such as SiH4, and a second process gas supply part 159b that supplies a second process gas.

[0067] The first process gas supply portion 159a protrudes largely from the side of the upper liner to increase the exposure of the first process gas, such as SiH4, to the plasma. Meanwhile, the second process gas supply portion 159b protrudes little from the side of the upper liner to decrease the exposure of the second process gas, such as hydrogen gas H2, to the plasma. The purge gas flows from the lower dome into the upper space 12 of the chamber, so it is supplied uniformly around the circumference, resulting in a spatially uniform pressure distribution.

[0068] The connection portion 196 is a curved recessed structure on the lower inner surface of the upper liner. The connection portion 196 has a depth and width of several millimeters. The diameter D3 of the connection portion 196 is larger than the diameter of the upper surface of the susceptor and smaller than the diameter D2 of the lower surface of the susceptor. Therefore, the curved portion 172b of the susceptor faces the connection portion 196 at a regular interval.

[0069] The lower liner 194 is disposed inside the chamber and has a cylindrical shape that surrounds the inner circumferential surface of the upper edge of the lower dome. The lower liner 194 includes a sloped lower outer surface 197a for coupling with the lower dome 158 and a sloped portion 195 on the inner surface. The sloped lower outer surface 197a has a flat portion 197 on the outside.

[0070] The lower liner 194 is made of quartz, a transparent or opaque material. That is, the lower liner has an inner circumferential surface facing the space of the lower dome, and the inner circumferential surface of the lower liner is sloped in a vertical direction, becoming thicker from the bottom to the top of the chamber. The second slope angle θ of the sloped portion is approximately 70 degrees. The sloped portion 195 exposes the lamp heater 166 to provide more uniform heating and scatters incident infrared rays to prevent heating of the chamber 160.

[0071] An inert gas (or purge gas) such as argon or nitrogen is injected between the susceptor 172 and the lower liner 194 to prevent the process gas from being injected into the lower space.

[0072] The lower liner 194 includes a first opening 194a formed on its inner surface adjacent to the upper liner for exhausting gas and a second opening 194b formed on the other side opposite the first opening 194a to provide a substrate passage. The first opening 194a and the second opening 194b are formed in the inclined portion 195. The first opening 194a is aligned with the exhaust portion, and the second opening 194b is aligned with the substrate inlet / outlet. When the susceptor 172 is in the raised position, the first opening 194a and the second opening 194b are substantially closed by the susceptor 172, preventing process gas from the upper space 12 from moving to the lower space 14 defined by the susceptor and the lower dome. Meanwhile, the first opening 194a, the connecting portion 196, and the curved portion 172b of the susceptor provide a passage through which the process gas can flow.

[0073] The heat insulating part 162 is ring-shaped and disposed between the lower surface of the chamber 160 and the reflector 160. The heat insulating part 162 reduces heat transfer from the heated reflector 160 to the chamber. The heat insulating part 162 is made of a ceramic material. The upper surface of the heat insulating part 162 has a recess. The recess of the heat insulating part and the recess of the lower surface of the chamber receive the washer-shaped coupling part 158a of the lower dome and form a vacuum seal.

[0074] The concentric lamp heater 166 includes a plurality of concentric ring-shaped lamp heaters and is connected to a power source 164. The concentric ring-shaped lamp heaters are arranged at regular intervals along the inclined surface of the lower dome 158. The concentric ring-shaped lamp heaters 166 are divided into three groups, which are supplied with power independently from each other. The concentric ring-shaped lamp heaters can be aligned by inserting them into ring-shaped grooves formed on the inclined surface of the reflector 160. For example, the concentric lamp heaters 166 are eight halogen lamp heaters. The lower three lamp heaters form a first group, the middle two lamp heaters form a second group, and the upper three lamp heaters form a third group. The first group is connected to a first power source 164a, the second group is connected to a second power source 164b, and the third group is connected to a third power source 164c. The first to third power sources 164a to 164c are independently controlled to heat the substrate uniformly.

[0075] The reflector 160 supports the lower surface of the heat insulating portion 162 and mounts the lamp heater 166. The inclined surface on which the lamp heater 166 is mounted is cone-shaped to maintain a certain distance from the inclined surface of the lower dome 158. The reflector 160 is made of a conductor and is cooled by cooling water.

[0076] The clamp 150 is disposed in contact with the upper surface of the chamber 160 and covers the edge of the upper dome 152. The clamp 150 is a part of the chamber that functions as a lid for the chamber. The clamp 150 is made of a conductive material and is cooled by cooling water. The lower surface of the clamp 150 has a recess to mate with the washer-shaped mating portion of the upper dome and includes a curved portion 150a to cover a portion of the curved portion of the upper dome 152. The curved portion 150a of the clamp 150 is gold-plated to reflect infrared rays. The inner diameter of the clamp 150 is substantially the same as or larger than the inner diameter D1 of the upper liner. The inner diameter of the clamp 150 is also the same as the diameter of the electromagnetic wave shielding housing 130.

[0077] The antenna 110 is disposed on the upper dome and forms an inductively coupled plasma in the upper space 12. The RF power supply 140 supplies RF power to the antenna 110 through an impedance matching box 142 and a power supply line 143.

[0078] An electromagnetic wave shielding housing 130 is disposed to surround the antenna 110. A heat insulating spacer 339 thermally insulates the electromagnetic wave shielding housing 130 from the upper surface of the chamber. A cooling housing 132 is disposed at a distance from the electromagnetic wave shielding housing 130. The cooling housing 132 has a flow path therein and is cooled by a refrigerant.

[0079] FIG. 5 is a conceptual diagram showing a plasma enhanced chemical vapor deposition apparatus according to another embodiment of the present invention.

[0080] 5, a plasma enhanced chemical vapor deposition apparatus 200 according to an embodiment of the present invention includes a chamber 160 with a sidewall, a susceptor 272 with inclined side surfaces 272a and 272b for mounting a substrate inside the chamber, an upper dome 152 made of a dielectric material and covering the upper surface of the chamber 160, a lower dome 158 made of a dielectric material and covering the lower surface of the chamber, and a liner 180 disposed inside the chamber and between the upper dome 152 and the lower dome. The liner 190 includes an inclined portion 195 with an inclined inner surface facing the inclined side surfaces 272a and 272b of the susceptor.

[0081] The susceptor 272 includes a curved portion 272c on the upper surface of the susceptor, and the inclined side surfaces 272a and 272b continuously connected to the curved portion. The inclined side surfaces include at least one of a first inclined surface 272a and a second inclined surface 272b. The first inclined surface 272a is discontinuously connected to the second inclined surface 272b. The second inclined surface 272b narrows the gap with the lower liner 194, and the first inclined surface 272a controls the flow direction of the process gas and provides sufficient space for the process gas to connect to the first opening.

[0082] Although the present invention has been illustrated and described above with respect to specific preferred embodiments, the present invention is not limited to such embodiments and includes all various forms of embodiments that can be implemented by a person having ordinary skill in the art to which the invention pertains without departing from the technical concept of the present invention as claimed in the claims. [Brief explanation of the drawings]

[0083] [Figure 1] 1 is a conceptual diagram illustrating a home position in a plasma enhanced chemical vapor deposition apparatus according to an embodiment of the present invention; [Figure 2] FIG. 2 is a conceptual diagram illustrating the ascending position in the plasma enhanced chemical vapor deposition apparatus of FIG. 1. [Figure 3] FIG. 2 is a conceptual diagram illustrating the plasma enhanced chemical vapor deposition apparatus of FIG. 1, cut in another direction. [Figure 4] 2 is a cutaway perspective view illustrating an upper liner, a lower liner, and a lower dome of the plasma enhanced chemical vapor deposition apparatus of FIG. 1. FIG. [Figure 5] 1 is a conceptual diagram showing a plasma enhanced chemical vapor deposition apparatus according to another embodiment of the present invention;

Claims

1. a chamber having a sidewall; a susceptor having sloped sides for mounting a substrate within the chamber; an upper dome covering an upper surface of the chamber and formed of a dielectric material; a lower dome covering a lower surface of the chamber and formed of a dielectric material; a liner disposed inside the chamber and between the upper dome and the lower dome; The substrate processing apparatus according to claim 1, wherein the liner includes an inclined portion having an inclined inner surface facing the inclined side surface of the susceptor.

2. 2. The substrate processing apparatus of claim 1, wherein a first inclination angle of the inclined side surface of the susceptor is the same as a second inclination angle of the inclined portion of the liner.

3. 3. The substrate processing apparatus according to claim 2, wherein the first tilt angle and the second tilt angle are 70 degrees.

4. The liner comprises: an upper liner having a first inner diameter and positioned adjacent the upper dome; a lower liner connected continuously to the upper liner and having the inclined portion with an increasing inner diameter; 2. The substrate processing apparatus of claim 1, wherein the lower liner is disposed adjacent to a lower surface of the upper liner and includes a first opening for exhausting gas and a second opening on the other side opposite the first opening for providing a passage for the substrate.

5. 5. The substrate processing apparatus according to claim 4, wherein the thickness of the susceptor is greater than the height of the first opening or the height of the second opening.

6. 5. The substrate processing apparatus of claim 4, wherein when the susceptor is in the raised position, the distance between the inclined portion of the lower liner and the inclined side surface of the susceptor is 1 mm to 3 mm.

7. 5. The substrate processing apparatus of claim 4, wherein when the susceptor is in the lowered position, the distance between the inclined portion of the lower liner and the inclined side surface of the susceptor is 7 mm to 13 mm.

8. The substrate processing apparatus of claim 4 , wherein the liner further comprises a curved connection portion between the upper liner and the lower liner.

9. 9. The substrate processing apparatus of claim 8, wherein the diameter of the connection portion is larger than the diameter of the upper surface of the susceptor and smaller than the diameter of the lower surface of the susceptor.

10. 2. The substrate processing apparatus of claim 1, wherein the susceptor includes a curved portion formed by curving an upper surface of the susceptor, and the inclined side surface is continuously connected to the curved portion.

11. the susceptor includes a curved surface portion that is curved on an upper surface of the susceptor, and the inclined side surface that is continuously connected to the curved surface portion, 9. The substrate processing apparatus according to claim 8, wherein the curved surface of the susceptor faces the connecting portion of the liner.

12. 12. The substrate processing apparatus according to claim 11, wherein the vertical distance between the curved surface of the susceptor and the connecting portion of the liner is 4 mm to 7 mm.

13. the susceptor is ceramic or graphite; 2. The substrate processing apparatus according to claim 1, wherein the thickness of the susceptor is 30 mm or more.

14. 2. The substrate processing apparatus according to claim 1, wherein when the susceptor is in a process position, an upper space defined by the susceptor and the upper dome is smaller than a lower space defined by the lower dome and the susceptor.

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