Pulsed laser deposition superconducting thin film deposition equipment

The apparatus addresses inefficiencies in conventional pulsed laser deposition by using a cylindrical target and cooling system to ensure uniform thin film deposition and extended target life, enhancing work efficiency and quality.

JP2025537560AActive Publication Date: 2025-11-18MARU L&C CO LTD
View PDF 7 Cites 0 Cited by

Patent Information

Application Number
JP2025526809
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Priority Date
2023-10-11
Filing Date
2024-06-13
Publication Date
2025-11-18
Estimated Expiration
2044-06-13

AI Technical Summary

Technical Problem

Conventional pulsed laser deposition methods using disk- or plate-shaped targets face inefficiencies due to target consumption leading to increased costs and interrupted work, and there is a need for improved target longevity and uniform thin film deposition.

Method used

A superconducting thin film deposition apparatus using a cylindrical target with multiple laser irradiation areas, a cooling system for the target holder, and a substrate holder with moving units to ensure uniform plume formation and extended target life.

Benefits of technology

The apparatus achieves high-quality thin film deposition with extended target life, preventing overheating and improving work efficiency by maintaining continuous operation.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure 2025537560000001_ABST
    Figure 2025537560000001_ABST
Patent Text Reader

Abstract

The present invention relates to a superconducting thin film deposition apparatus for pulsed laser deposition, and the deposition equipment for performing pulsed laser deposition includes: a vacuum chamber having an internal space and maintained in a vacuum state; a first laser generator and a second laser generator attached to the vacuum chamber and configured to irradiate a target with a pulsed laser; a cylindrical target having a hollow, the hollow including a first region reached by the first laser generated by the first laser generator and a second region reached by the second laser generated by the second laser generator; a target holder configured to be inserted into the hollow formed in the cylindrical target to hold the cylindrical target, the target holder including an insertion portion provided with a cooling flow path; a cooling device that circulates a cooling fluid through the cooling flow path to release heat of the cooling fluid; and a substrate holder that holds a substrate on which plume particles formed by the laser irradiated on the cylindrical target are deposited.
Need to check novelty before this filing date? Find Prior Art

Description

[Technical Field]

[0001] The present invention relates to a superconducting thin film deposition apparatus using pulsed laser deposition (PLD) technology. [Background technology]

[0002] Generally, as electronic and electrical devices become smaller and more highly integrated, the elements used in each device also become smaller and more highly integrated.

[0003] Oxide thin film elements such as superconductors and semiconductors are widely used to achieve miniaturization and high integration of elements, and it is most important that such thin films are formed widely and uniformly despite their thinness.

[0004] In order to form such superconductor, semiconductor or oxide thin films, methods such as sputtering deposition and pulsed laser deposition are being studied.

[0005] In these deposition methods, a device is completed by depositing a superconducting thin film on a predetermined substrate, or depositing an electrode on a predetermined substrate, depositing a dielectric thin film on the electrode, and then depositing an electrode on the electrode.

[0006] In a pulsed laser deposition device, a target is placed in a vacuum chamber facing the substrate, and a pulsed laser beam is focused and irradiated onto the target, causing the high-temperature target to generate atomic gas.

[0007] The atomic gas reaches the substrate from the target in the form of a plume of a predetermined shape.

[0008] The atoms that reach the substrate can form a thin film of a predetermined thickness having the same composition as the target material that maintains a minimum binding energy state through chemical reactions and reactions with substrate atoms on the surface of the substrate.

[0009] Pulsed laser deposition equipment is capable of multi-target operation and can produce various types of thin films in a chamber while maintaining a vacuum state, which has the advantage of enabling the growth of high-quality thin films with the desired composition ratio and free of impurities and scratches.

[0010] Thin film deposition variables in a pulsed laser deposition apparatus include the substrate temperature, type of deposition gas, gas partial pressure, laser energy, and the distance between the target and the substrate. These deposition variables may vary slightly from experiment to experiment, which may affect the reproducibility of the experiment. Therefore, it is important to maintain the same deposition conditions.

[0011] On the other hand, conventionally, a pulsed laser is irradiated onto a plate-shaped target to ablate atomic gas from the target. Since the laser is concentrated only on a specific part of the target, the target must be replaced simply when that specific part of the target is consumed, which increases costs and reduces work efficiency due to the interruption of work caused by target replacement. [Prior art documents] [Patent documents]

[0012] [Patent Document 1] Korean Patent Application No. 10-2006-0032939 Summary of the Invention [Problem to be solved by the invention]

[0013] The present invention has been devised to solve the problems of the prior art, and its object is to provide a superconducting thin film deposition apparatus using pulsed laser deposition, which can uniformly form a plume by replacing a conventional disk- or plate-shaped target with a cylindrical target, so that plume particles can be deposited on a substrate to form a high-quality thin film, the life of the target can be extended to maintain continuity of operation, and the target holder can be cooled to prevent overheating of the target, thereby significantly improving work efficiency. [Means for solving the problem]

[0014] The object of the present invention as described above is to In deposition equipment that performs pulsed laser deposition, a vacuum chamber having an internal space and maintained in a vacuum state; a first laser generating unit and a second laser generating unit attached to the vacuum chamber and configured to irradiate a target with a pulsed laser; a cylindrical target having a hollow, the cylindrical target including a first region where the first laser generated by the first laser generating unit reaches and a second region where the second laser generated by the second laser generating unit reaches; a target holder including an insert portion formed to be inserted into a hollow formed in the cylindrical target so as to hold the cylindrical target, the insert portion having a cooling channel; a cooling device that circulates a cooling fluid through the cooling passages and dissipates heat from the cooling fluid; a substrate holder that holds a substrate on which plume particles formed by the laser irradiating the cylindrical target are deposited; This can be achieved by a pulsed laser deposition superconducting layer thin film deposition apparatus including:

[0015] The cooling flow passage is formed by extending in a spiral shape along the extension direction of the insertion part, and the cooling flow passage has a number of vanes arranged in a spiral shape on its inner circumferential surface, so that the flow of cooling water forms a vortex.

[0016] a target holder moving unit that moves the target holder; The target holder moving unit includes a linear driving unit connected to one end of the target holder and located outside the vacuum chamber to linearly move the target holder a predetermined distance; a rotation driving unit connected to one end of the target holder and located outside the vacuum chamber to rotate the target holder by a predetermined angle; and a control unit that adjusts the linear moving distance of the linear driving unit to set the linear position of the target or sets the rotation angle of the rotation driving unit.

[0017] The cooling device is characterized in that an inlet communicating with one end of the cooling channel is formed at one end of a target holder, and an outlet communicating with the other end of the cooling channel is formed, and the cooling device includes a cooling water supply unit connected to the inlet to supply cooling water, and a cooling water recovery unit connected to the outlet to recover cooling water.

[0018] the substrate holder includes a substrate transfer unit that moves the substrate; The substrate transfer unit a supply reel from which the substrate is drawn and a take-up reel to which the substrate is drawn, which are formed on both sides of the outside of the vacuum chamber; a drive device for driving the unwinding reel or the take-up reel; a plurality of rolls provided inside the vacuum chamber, around which the substrate is wound and moved; The composition is characterized in that it comprises:

[0019] a substrate holder transport unit configured to move the substrate holder to change the position of the substrate; The substrate holder transfer unit The vacuum chamber includes brackets attached to the inner wall of the vacuum chamber and spaced apart on both sides; rollers on both sides axially coupled to the brackets on both sides; a conveyor belt connecting the rollers on both sides; a position setting drive unit consisting of a motor that transmits rotational power to one of the rollers; and a connecting unit connected to the conveyor belt and to which a substrate holder is fixed, wherein the substrate holder includes first and second support members arranged spaced apart on both sides; and a horizontal bar connected horizontally to the top of the first and second support members and to which the connecting unit is attached.

[0020] The moving means includes a rail part having a predetermined length and attached to a vacuum chamber, the rail part having a groove cut in the bottom in the length direction, steps on both sides of the groove and a space formed therein, a main body inserted into the space inside the rail part, a drive source built in, rotating shafts on both sides, and a driving gear formed on each rotating shaft, a rack gear geared to the driving gear and formed in the length direction on the step of the rail part, a connecting member connected to a lower part of the main body and connected to the groove of the rail part, and a first laser generator or a second laser generator connected to the connecting member.

[0021] The rotation driver includes a main rotation gear coupled to one end of the target holder, an auxiliary rotation gear gear geared to the main rotation gear, and a motor for rotating the auxiliary rotation gear, and an angle sensor for measuring a rotation angle of the main rotation gear and adjusting the rotation angle of the motor.

[0022] The linear driving unit includes a linear gear unit formed at one end of the target holder over a predetermined section, and a motor having a shaft connected to a spur gear that is gear-coupled to the linear gear unit. [Effects of the Invention]

[0023] According to the present invention, by using a cylindrical target, a plume can be uniformly formed on the target, and the plume particles can be deposited on a substrate to form a high-quality thin film.

[0024] Furthermore, application of a cylindrical target can extend the lifespan and maintain the continuity of the operation.

[0025] Furthermore, by cooling the target holder, overheating of the target can be prevented, and the efficiency of the work can be improved by an order of magnitude. [Brief explanation of the drawings]

[0026] [Figure 1] 1 is a diagram showing a superconducting thin film deposition apparatus by pulsed laser deposition according to the present invention; [Figure 2] 2 is a process flow diagram of a superconducting thin film deposition apparatus using pulsed laser deposition according to the present invention; [Figure 3] 1 is a perspective view showing a superconducting thin film deposition apparatus by pulsed laser deposition according to the present invention; [Figure 4] 1 is a front view showing a superconducting thin film deposition apparatus by pulsed laser deposition according to the present invention; [Figure 5] 1 is a perspective view showing a target holder in which a spiral flow path is formed in a superconducting thin film deposition apparatus by pulsed laser deposition according to the present invention; [Figure 6] 1 is a side view showing a laser generating unit equipped with a moving means in a superconducting thin film deposition apparatus by pulsed laser deposition according to the present invention; [Figure 7] 1 is a front view showing a laser generating section equipped with a moving means in a superconducting thin film deposition apparatus by pulsed laser deposition according to the present invention; [Figure 8] 1 is a diagram showing a substrate holder transfer device in a superconducting thin film deposition apparatus by pulsed laser deposition according to the present invention; DETAILED DESCRIPTION OF THE INVENTION

[0027] Hereinafter, the embodiments will be described in detail with reference to the accompanying drawings. However, since various modifications can be made to the embodiments, the scope of the patent application is not limited to these embodiments. It should be understood that all modifications, equivalents, and alternatives to the embodiments are included in the scope of the patent.

[0028] Specific structural or functional descriptions of the embodiments are disclosed for illustrative purposes only and may be modified and implemented in various forms. Therefore, the embodiments are not limited to the specific disclosed forms, and the scope of this specification includes modifications, equivalents, or alternatives within the technical spirit.

[0029] Although terms such as "first" or "second" are used to describe various components, such terms should be interpreted only to distinguish one component from another. For example, a first component may be referred to as a second component, and similarly, a second component may be referred to as a first component.

[0030] When a component is referred to as being "coupled" to another component, it may be directly coupled or connected to the other component, but it should be understood that there may be other components in between.

[0031] The terms used in the examples are merely for the purpose of explanation and should not be construed as limiting. The singular expressions include the plural expressions unless the context clearly dictates otherwise. In this specification, the terms "comprise" or "have" and the like specify the presence of features, numbers, steps, operations, components, parts, or combinations thereof described above in the specification, and should be understood not to preclude the presence or additional possibility of one or more other features, numbers, steps, operations, components, parts, or combinations thereof.

[0032] Unless otherwise defined, all terms, including technical or scientific terms, used herein have the same meaning as commonly understood by a person of ordinary skill in the art to which the embodiments pertain. Terms defined in commonly used dictionaries should be interpreted to have a meaning consistent with the meaning they have in the context of the relevant art, and should not be interpreted in an idealized or overly formal sense unless expressly defined in this application.

[0033] Furthermore, with reference to the accompanying drawings, the same components are given the same reference numerals regardless of the reference numerals, and redundant descriptions thereof will be omitted. In describing the embodiments, if it is determined that a detailed description of related publicly known technology may obscure the gist of the embodiments, the detailed description thereof will be omitted.

[0034] The advantages and features of the present invention, as well as methods for achieving them, will become apparent from the following detailed description of the embodiments in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, and may be embodied in various different forms. However, the present embodiments are provided to complete the disclosure of the present invention and to fully convey the scope of the invention to those skilled in the art. The present invention is defined only by the claims.

[0035] In the embodiments of the present invention, unless otherwise defined, all terms, including technical or scientific terms, used herein have the same meaning as commonly understood by a person of ordinary skill in the art to which the present invention belongs. Terms defined in commonly used dictionaries should be interpreted as having a meaning consistent with the meaning they have in the context of the relevant art, and should not be interpreted in an idealized or overly formal sense unless explicitly defined in the embodiments of the present invention.

[0036] The shapes, sizes, ratios, angles, numbers, etc. disclosed in the drawings for illustrating the embodiments of the present invention are illustrative only, and the present invention is not limited to the illustrated matters. Furthermore, when describing the present invention, if it is determined that a detailed description of related prior art may unnecessarily obscure the gist of the present invention, such a detailed description will be omitted. When terms such as "comprise," "have," and "consist" are used in this specification, other parts may be added unless "only" is used. When a component is expressed in the singular, it also includes the plural unless otherwise explicitly stated.

[0037] When interpreting elements, they are interpreted as including a margin of error even if there is no explicit statement otherwise.

[0038] In the case of a description of a positional relationship, for example, when the positional relationship of two parts is described using terms such as "above," "on top of," "below," or "next to," one or more other parts may be located between the two parts, as long as "immediately" or "directly" is not used.

[0039] When an element or layer is referred to as being "on" another element or layer, this includes all cases where the element or layer is directly on top of or between other layers or elements. Like reference characters refer to like elements throughout the specification.

[0040] The positions and thicknesses of the components shown in the drawings are shown for convenience of explanation, and the present invention is not necessarily limited to the sizes and thicknesses of the components shown in the drawings.

[0041] The features of the various embodiments of the present invention may be partially or wholly combined or combined with each other, and various technical interlocking and driving mechanisms are possible, as will be readily understood by those skilled in the art, and each embodiment may be implemented independently of the others or may be implemented together in a linked relationship.

[0042] 1 is a diagram showing a superconducting layer thin film deposition apparatus by pulsed laser deposition according to the present invention; FIG. 2 is a process flow chart of the superconducting layer thin film deposition apparatus by pulsed laser deposition according to the present invention; FIG. 3 is a perspective view showing a superconducting layer thin film deposition apparatus by pulsed laser deposition according to the present invention; FIG. 4 is a front view showing a superconducting layer thin film deposition apparatus by pulsed laser deposition according to the present invention; FIG. 5 is a perspective view showing a target holder having a spiral flow path formed in a superconducting layer thin film deposition apparatus by pulsed laser deposition according to the present invention; FIG. 6 is a side view showing a laser generating unit equipped with a moving means in a superconducting layer thin film deposition apparatus by pulsed laser deposition according to the present invention; FIG. 7 is a front view showing a laser generating unit equipped with a moving means in a superconducting layer thin film deposition apparatus by pulsed laser deposition according to the present invention; and FIG. 8 is a diagram showing a substrate holder transport device in a superconducting layer thin film deposition apparatus by pulsed laser deposition according to the present invention.

[0043] A superconductor is a material whose electrical resistance becomes '0' at temperatures below the critical temperature (Tc) and exhibits perfect diamagnetism known as the Meissner effect.

[0044] First-generation superconductivity was first discovered in 1911 when the electrical resistance of mercury became zero at a temperature of 4.2 K in liquid helium, while second-generation superconductivity was discovered in 1986 when copper oxide superconductors were discovered.

[0045] Oxide superconductor (REBCO: RE is one or more rare earth elements (Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu)) includes rare earth oxides, such as (YBa2Cu3O7-x), (GdBa2Cu3O7-x), or individual oxide particle materials of RE, Ba, and Cu, or complex oxide particles of two or more of these elements.

[0046] The most important condition for using second-generation high-temperature superconductor (HTS) wires in superconducting applications is that they must have a high critical current (IC) value under a high magnetic field.

[0047] In particular, the critical current density (JC) should be as large as possible even under a large magnetic field applied in any direction. The limit of the critical current density is determined by the action of flux pinning centers (artificial pins) that fix the magnetic flux lines that penetrate from the outside and are distributed within the superconductor and try to move due to the Lorentz force.

[0048] Here, many researchers and inventors have developed a method for increasing the magnitude of the critical current under a magnetic field by doping nano-sized non-superconducting particles into the superconducting layer as the magnetic flux pinning point.

[0049] Generally, the material constituting the artificial pin may include at least one of BaHfO3, SrHfO3, CaHfO3, BaZrO3, BaSnO3, etc., a solid solution thereof, or a mixture of two or more thereof.

[0050] The superconducting layer of REBCO-based high-temperature superconducting wire can be produced by a variety of methods, including pulsed laser deposition (PLD), metal-organic chemical vapor deposition (MOCVD), metal-organic deposition (MOD), and reactive co-evaporation (RCE).

[0051] Among these, the PLD method is particularly effective in obtaining biaxially oriented thin films. The PLD method, one of the methods for depositing superconductors, is known as the most convenient and effective technology for manufacturing high-temperature superconductors (HTS), and it is widely known that depositing oxide superconducting layers using the PLD method can form oxide superconducting layers of good film quality, resulting in high superconducting properties.

[0052] The PLD method uses a laser focused from a lens to strike a solid REBCO target, extracting the target material from the surface to form a plume-like plasma, and then crystallizing the plume material on the surface of a wire heated to a high temperature.

[0053] The advantages of PLD are that it forms a thin film with a chemical composition close to that of the target material, has low contamination, and has a high deposition rate. However, it has the disadvantage of lower productivity compared to other manufacturing methods.

[0054] In order to increase productivity with the PLD method, a method has been used in which multiple lasers are irradiated onto the target to increase the deposition amount.

[0055] This patent uses multiple lasers and a cylindrical target that can be used for a long time without changing. When multiple lasers are irradiated onto the target at the same time, a lot of deposition material is generated, and at the same time the temperature of the target rises, but this is solved by installing a cooling device.

[0056] The superconducting layer thin film deposition apparatus by pulsed laser deposition (PLD) technology according to the present invention is In deposition equipment that performs pulsed laser deposition, a vacuum chamber 100 having an internal space and maintained in a vacuum state; a first laser generating unit L1 and a second laser generating unit L2 attached to the vacuum chamber 100 and configured to irradiate a pulsed laser onto the target 200; a cylindrical target 200 having a hollow space, the cylindrical target 200 including a first region Z1 where a first laser beam generated by a first laser generating unit L1 reaches and a second region Z2 where a second laser beam generated by a second laser generating unit L2 reaches; a target holder (300) including an insertion portion (310) formed to be inserted into a hollow formed in the cylindrical target (200) so as to hold the cylindrical target (200), the insertion portion (310) including a cooling channel (320); a cooling device 400 for circulating a cooling fluid through the cooling passage 320 and dissipating heat of the cooling fluid; and a substrate holder 500 for holding a substrate P on which plume particles formed by a laser irradiating a cylindrical target 200 are deposited.

[0057] The vacuum chamber 100 is connected to a vacuum pump 104, which evacuates and reduces the internal pressure to a pressure that meets the process conditions.

[0058] The deposition chamber and the unwinding and winding chambers are connected by vacuum (not shown) and can consist of only one chamber.

[0059] Inside the deposition chamber, a shield plate (not shown) is provided to protect the inside of the vacuum chamber 100 and to protect the back surface of the substrate (from the deposition material) that is not to be deposited.

[0060] The substrate heating means (not shown) heats the rear surface of the substrate where deposition is being performed (electric heater) to ensure that the deposition material is deposited properly during deposition.

[0061] The first laser generating unit L1 or the second laser generating unit L2 is deposited on the outside of the vacuum chamber 100 and irradiates a pulsed laser beam toward the target 200 through a window W formed on the wall of the vacuum chamber 100, causing the atomic gas plume ablated from the target 200 to be incident on the substrate P, resulting in plasma particles being deposited on the substrate P.

[0062] The window W may be made of a material that allows the laser beam to pass through so that the laser generated by the first laser generating unit L1 or the second laser generating unit L2 located outside the vacuum chamber 100 can enter the interior of the vacuum chamber 100.

[0063] The first laser generating unit L1 and the second laser generating unit L2 are respectively disposed on one side and the other side of the target 200, spaced apart from each other, and a first region Z1 and a second region Z2, to which the laser is irradiated, may be formed on the outside of the cylindrical target 200, respectively.

[0064] Preferably, the first laser generating unit L1 and the second laser generating unit L2 are disposed symmetrically on both sides of the target 200, respectively.

[0065] Therefore, since the cylindrical target 200 is long, multiple laser irradiation areas, i.e., the first area Z1 and the second area Z2, are formed, and plumes are formed in each area, thereby improving deposition efficiency.

[0066] The vacuum chamber 100 includes a plurality of bases 110 spaced apart from each other, and a target holder 300 is rotatably coupled to the bases 110 .

[0067] Preferably, the target holder 300 is rotatably mounted on a plurality of bases 110 and comprises a rod body 301 into which the insertion portion 310 of the target holder 300 is inserted and coupled, and first and second discs 302 and 303 formed on both sides of the rod body 301.

[0068] Preferably, the first and second discs 302, 303 are inserted into and coupled to the rod 301 to facilitate attachment and detachment, and the rod 301 is inserted through the second disc 303 so that it can be moved a certain distance in the forward and backward directions.

[0069] At the rear end of the rod body 301, a moving bar 305 is integrally formed on which a linear gear part 42 of the linear driving part 40, which will be described later, is formed.

[0070] The substrate holder 500 includes a substrate transfer unit for moving the substrate.

[0071] The substrate transport unit is formed on both sides of the outside of the vacuum chamber 100 and includes an unwinding reel 550 from which the substrate P is pulled out and a take-up reel 560 into which the substrate P is pulled in, a driving device (not shown) that drives the unwinding reel 550 or the take-up reel 560, and a plurality of rolls 570 that are provided inside the vacuum chamber 100 and on which the substrate is wound and moved.

[0072] The supply reel 550 and the take-up reel 560 are configured in separate chambers outside the vacuum chamber 100, and the supply reel 550 and the take-up reel 560 drive a drive device (not shown) to transport the substrate.

[0073] To transport a long substrate, the speeds of the unwind reel 550 and take-up reel 560 should be synchronized with each other.

[0074] The roll 570 is provided in plural, and the substrate transferred from the unwinding reel 550 is repeatedly wound several times during deposition, and then transferred to the take-up reel 560 .

[0075] The cylindrical target 220 is made of the same material as the superconducting layer and rotates around the center of the cylinder. After completing the rotation, it moves horizontally to the left (right) and then rotates again, thereby allowing the target material outside the cylinder to be used evenly, greatly improving substrate productivity and target efficiency.

[0076] The inner surface of the target is connected to another rotating tube, and even if the target is used for a long time, the temperature rise of the target is prevented by cooling means (liquid, gas).

[0077] The pulse laser preferably has a high energy density and an excellent output so as to obtain a sufficient amount of evaporation of the target.

[0078] Applicable laser types include Ar-F (193 nm), Kr-F (248 nm), Xe-Cl (308 nm), excimer laser, YAG laser, CO2 laser, and the like.

[0079] The laser beam emitted from the outside is introduced into the vacuum chamber through a laser inlet provided on one side of the chamber, which is treated with an anti-reflective coating to prevent the laser beam from being reflected.

[0080] The oxygen supply port reduces the pressure (vacuum) inside the deposition chamber using a vacuum pump, then injects ionized gas from an oxygen ionizer and adjusts the injection amount (flow control valve) to maintain a constant internal pressure in the chamber and form an oxygen atmosphere.

[0081] The tilt angle and length of the artificial pins can be varied by adjusting the atmospheric pressure during PLD deposition, and can also be adjusted by the pulse laser frequency of the PLD system and the atmospheric pressure inside the chamber.

[0082] Once deposition is complete, the nitrogen gas valve introduces nitrogen gas (dry air) into the chamber to make it the same pressure as the atmosphere, then the chamber is emptied and the wire is finally removed.

[0083] Referring to FIG. 2, the substrate P is placed inside the vacuum chamber 100 in S10.

[0084] Next, the vacuum chamber 100 is evacuated to create a vacuum inside (S20).

[0085] Next, oxygen is supplied into the vacuum chamber 100 (S30), while maintaining the process pressure.

[0086] Next, deposition is started in S40, and the substrate transport unit is driven to move the substrate P continuously.

[0087] Next, S50 ends the deposition.

[0088] Next, the inside of the vacuum chamber 100 is filled with nitrogen, and the substrate P is removed (S60).

[0089] Meanwhile, referring to FIGS. 3 and 4, a linear driving unit 40 or a rotary driving unit 50 is included to realize linear or rotary movement of the target holder 300.

[0090] Also included is a control unit (not shown) that adjusts the linear movement distance of the linear driving unit 40 to set the linear position of the target 200 or sets the rotation angle of the rotation driving unit 50.

[0091] The linear drive unit 40 is connected to one end of the target holder 300 and is provided outside the vacuum chamber 100 to move the target holder 300 linearly by a predetermined distance.

[0092] According to one example, the linear driving unit 40 includes a linear gear unit 42 formed over a predetermined section on the outer surface of a moving bar 305 formed at one end of a rod body 301 of the target holder 300, and a first motor 44 having a shaft connected to a spur gear 442 that is gear-coupled to the linear gear unit 42.

[0093] When the first motor 44 is turned on, the spur gear 442 rotates forward and backward, and the linear gear portion 42 and the moving bar 305 connected to the rod body 301 of the target holder 300 are moved left and right, thereby moving the target holder 300 left and right, thereby adjusting its length.

[0094] Preferably, the length by which the target holder 300 can be adjusted left and right should be limited to the thickness of the second disc 303, so that separation of the auxiliary rotary gear 52 and the main rotary gear 51 of the rotary drive unit 50, which will be described later, can be prevented.

[0095] Meanwhile, the rotation driver 50 is connected to one end of the target holder 300 and is provided outside the vacuum chamber 100 to rotate the target holder 300 by a predetermined angle.

[0096] According to one example, the rotation driver 50 includes a main rotation gear 51 formed on the outer circumferential surface of the second disc 303 at one end of the target holder 300, an auxiliary rotation gear 52 gear-coupled to the main rotation gear 51, and a second motor 53 for rotating the auxiliary rotation gear 52. The main rotary gear 51 includes an angle sensor 54 for measuring the rotation angle of the main rotary gear 51 and adjusting the rotation angle of the second motor 53 .

[0097] The rotation of the second motor 53 rotates the auxiliary rotary gear 52, which in turn rotates the main rotary gear 51 gear-coupled thereto, thereby inducing the rotation of the target holder 300.

[0098] Therefore, the target holder 300 can be moved linearly in the left-right direction to change the first area Z1 where the first laser reaches and the second area Z2 where the second laser reaches, thereby enabling the target holder 300 to be used uniformly.

[0099] Furthermore, by rotating the target holder 300, the first area Z1 and the second area Z2 can be changed, and the target holder 300 can be used more evenly.

[0100] Although the drawings in this specification show one target holder 300 and one target 200 inside the vacuum chamber 100, there may be a plurality of target holders 300 and targets 200 attached to the target holders 300 inside the vacuum chamber 100. For example, the target holders 300 may be arranged in parallel or in series for faster and more efficient deposition operations. In some cases, a plurality of substrate holders 500 and substrates P may be provided, and deposition may be performed on a plurality of substrates P simultaneously.

[0101] Meanwhile, according to an embodiment, the target holder 300 may include a cooling device 400 having a cooling passage formed therein through which cooling water circulates, thereby providing a cooling function.

[0102] In one example, the cooling device 400 is connected to one end of the cooling channel 320 and has an inlet 410 formed at one end of the target holder 300 and an outlet 420 formed at the other end of the cooling channel 320 .

[0103] The cooling water supply unit 430 is connected to the inlet 410 to supply cooling water, and the cooling water recovery unit 440 is connected to the outlet 420 to recover cooling water.

[0104] The cooling water supply unit 430 and the cooling water recovery unit 440 are equipped with pumps to allow the supply and recovery of cooling water to be continuously circulated.

[0105] Preferably, the cooling passages 320 are formed inside the target holder 300, and a number of cooling passages 320 may be formed in the target holder 300 so that a stable cooling effect can be achieved throughout the target holder 300.

[0106] According to one example, the cooling channel 320 may be cylindrical and tubular, but may be formed to extend spirally along the extension direction of the insert 310 of the target holder 300 .

[0107] The cooling passage 320 has a number of vanes 322 arranged spirally on its inner circumferential surface.

[0108] Therefore, the spirally arranged vanes 322 cause the flow of cooling water to form a vortex, which keeps the flow of cooling water stable and improves circulation efficiency.

[0109] Meanwhile, in a basic embodiment, the first and second laser generating units L1 and L2 are fixedly formed so as to irradiate a laser beam to a specific point on the target 200, but if necessary, the first and second laser generating units L1 and L2 can be attached to a moving means 600 provided in the vacuum chamber 100 to change the laser irradiation point.

[0110] The moving means 600 moves the first laser generating unit L1 or the second laser generating unit L2 so that the spots where the first laser and the second laser reach can be varied.

[0111] According to one example, the vehicle 600 may include: The vacuum chamber 100 includes a rail unit 620 having a predetermined length and attached to the vacuum chamber 100, the rail unit 620 being cut in the bottom in the length direction to form a groove for movement, steps 622 formed on both sides of the groove for movement, and a space formed inside; a main body 640 inserted into the internal space of the rail unit 620, having a drive source 642 built in, rotating shafts 643 formed on both sides, and a driving gear 644 formed on each rotating shaft 643; a rack gear 660 gear-engaged with the driving gear 644 and formed in the length direction on the steps 622 of the rail unit 620; a connecting member 650 connected to the lower part of the main body 640 and coupled to the groove for movement of the rail unit 620; and first and second laser generating units L1 and L2 coupled to the connecting member 650.

[0112] The drive source 642 may be a motor.

[0113] By driving the driving source 642 in the forward and reverse directions, the main body 640 and the first and second laser generating units L1 and L2 connected thereto move in the forward and backward directions along the rail unit 620, thereby enabling position setting.

[0114] Meanwhile, the apparatus may further include a substrate holder transport unit 700 that moves the substrate holder 500 to change the position of the substrate.

[0115] Referring to FIG. 6, the substrate holder transfer unit 700 is attached to the inner wall of the vacuum chamber 100 and includes brackets 710 spaced apart on both sides, rollers 721 and 722 axially connected to the brackets 710 on both sides, a conveyor belt 723 connecting the rollers 721 and 722 on both sides, a position setting drive unit 720 consisting of a motor 724 that transmits rotational power to the rollers 721 and 722 on one side, and a connection unit 730 connected to the conveyor belt 723 and to which the substrate holder 500 is fixed.

[0116] The substrate holder 500 includes first and second support members 510 and 520 spaced apart on both sides to support both ends of the substrate P, and a horizontal bar 530 connected horizontally to the top of the first and second support members 510 and 520 and to which the connecting portion 730 is attached.

[0117] Therefore, the conveyor belt 723 rotates forward and backward as the third motor 724 is driven forward and backward, and the substrate holder 500 connected thereto by the connecting portion 730 can be moved and its position can be changed.

[0118] Although the present invention has been described in detail above with reference to the accompanying drawings, the present invention is not necessarily limited to such examples and may be variously modified within the scope of the technical concept of the present invention. Therefore, the disclosed embodiments of the present invention are intended to illustrate, rather than limit, the technical concept of the present invention, and the scope of the technical concept of the present invention is not limited by such embodiments. Therefore, the above-described embodiments should be understood to be illustrative in all respects and not restrictive. The scope of protection of the present invention should be interpreted in accordance with the following claims, and all technical concepts within the scope equivalent thereto should be interpreted as being included in the scope of the present invention.

[0119] Accordingly, other implementations, other embodiments, and equivalents of the claims are within the scope of the following claims. [Explanation of symbols]

[0120] 100: Vacuum chamber 200: Target L1: First laser generator L2: Second laser generator 300: Target holder 320: Cooling channel 400: Cooling device 410: Inlet 420: Outlet 430: Cooling water supply section 440: Cooling water recovery section 500: Substrate holder 510: First support member 520: Second support member 600:Transportation 620: Rail section 640:Main body 660: Rack gear 700: Substrate holder transfer unit 710: Bracket 720: Position setting drive unit 730: Connection part

Claims

1. In deposition equipment that performs pulsed laser deposition, a vacuum chamber having an internal space and maintained in a vacuum state; a first laser generating unit and a second laser generating unit attached to the vacuum chamber for irradiating a target with a pulsed laser; a cylindrical target having a hollow, the cylindrical target including a first region where the first laser generated by the first laser generating unit reaches and a second region where the second laser generated by the second laser generating unit reaches; a target holder including an insert portion formed to be inserted into a hollow formed in the cylindrical target so as to hold the cylindrical target, the insert portion having a cooling channel; a cooling device that circulates a cooling fluid through the cooling passages and dissipates heat from the cooling fluid; a substrate holder that holds a substrate on which plume particles formed by the laser irradiating the cylindrical target are deposited; 1. A superconducting layer thin film deposition apparatus using pulsed laser deposition, comprising:

2. The cooling flow path is formed by extending in a spiral shape along an extension direction of the insertion portion, 2. The apparatus for depositing a superconducting thin film by pulsed laser deposition according to claim 1, wherein the cooling passage has a number of spirally arranged vanes on its inner circumferential surface, so that the flow of cooling water forms a vortex.

3. a target holder moving unit that moves the target holder; The target holder moving unit includes: a linear drive unit connected to one end of the target holder and provided outside the vacuum chamber, for linearly moving the target holder by a predetermined length; a rotation driving unit connected to one end of the target holder and provided outside the vacuum chamber, for rotating the target holder by a predetermined angle; a control unit that adjusts the linear movement distance of the linear driving unit to set the linear position of the target or sets the rotation angle of the rotary driving unit; 2. The apparatus for depositing a superconducting thin film by pulsed laser deposition according to claim 1, further comprising:

4. the substrate holder includes a substrate transfer unit that moves the substrate; The substrate transfer unit a supply reel from which the substrate is drawn and a take-up reel to which the substrate is drawn, which are formed on both sides of the outside of the vacuum chamber; a drive device for driving the unwinding reel or the take-up reel; 2. The apparatus for depositing a superconducting thin film by pulsed laser deposition according to claim 1, further comprising: a plurality of rolls installed inside the vacuum chamber, around which the substrate is wound and moved.

5. a substrate holder transport unit that moves the substrate holder; The substrate holder transfer unit Brackets attached to the inner wall of the vacuum chamber and spaced apart from each other on both sides; a position setting drive unit including two rollers axially coupled to the brackets on both sides, a conveyor belt connecting the rollers on both sides, and a motor for transmitting rotational power to one of the rollers; a coupling portion connected to the conveyor belt and to which a substrate holder is fixed, the substrate holder includes first and second support members spaced apart from each other, and a horizontal bar connected to upper portions of the first and second support members in a horizontal direction and to which the connecting portion is attached; a moving means for moving the first laser generating unit or the second laser generating unit so that spots reached by the first laser and the second laser are variable; The moving means is a rail part having a predetermined length and attached to a vacuum chamber, the rail part having a groove formed in the bottom by cutting the groove in the length direction, steps formed on both sides of the groove, and a space formed inside the groove; a main body that is inserted into the internal space of the rail portion, has a built-in drive source, has rotating shafts formed on both sides, and has a main driving gear formed on each rotating shaft; a rack gear coupled to the driving gear and formed in a longitudinal direction on a step of the rail portion, 2. The apparatus for depositing a superconducting thin film by pulsed laser deposition according to claim 1, further comprising: a connecting member connected to a lower portion of the main body and coupled to a moving groove of the rail portion; and a first laser generating unit or a second laser generating unit coupled to the connecting member.

Citation Information

Patent Citations

  • Apparatus for stripping and grinding target material

    JP1991056670A

  • Jig for vapor deposition and method for recovering noble metal from the jig for vapor deposition

    JP1998259471A

  • Composite target for laser deposition, and method for producing oxide superconductive wire material using the same

    JP2013136817A

  • Sputtering source and sputtering apparatus including the same

    KR1020120137801A

  • System sign for providing language translation service for the hearing impaired person

    KR102314710B1