Gas Reclamation System, Substrate Processing System, and Related Apparatus and Methods for Semiconductor Manufacturing

Abstract

The present disclosure generally relates to a gas recycling system, a substrate processing system, and related apparatus and methods for semiconductor manufacturing. In one or more embodiments, unreacted gas from a chamber may be reused, reused, and reused one or more times. In one embodiment, the gas recycling system includes a pump fluidly connected to one or more outlet passages of the processing chamber and configured to exhaust gas from the processing chamber. The system includes one or more filtration devices in fluid communication with the pump, whereby gas flows from the pump to the one or more filtration devices. The one or more filtration devices are configured to remove one or more impurities from the gas. The system includes a gas supply system in fluid communication with the one or more filtration devices, whereby filtered gas flows to the gas supply system.

Description

[Technical Field]

[0001]

[0001] Embodiments of the present disclosure relate generally to gas recycling systems, substrate processing systems, and related apparatus and methods for semiconductor manufacturing. In one or more embodiments, unreacted gas from a chamber may be recycled, reused, and reused one or more times. [Background technology]

[0002]

[0002] Semiconductor substrates are processed for a variety of applications, including the fabrication of integrated devices and microdevices. During processing (e.g., during epitaxial deposition processes), reactive gases are used to deposit material on the substrate and / or to clean chamber components. Inert gases may also be used, as certain reactive gases may not completely react during processing or cleaning.

[0003] This results in a lot of gas being wasted in semiconductor manufacturing, with increased emissions and carbon footprint, increased gas and energy consumption, and increased operational costs such as material costs, delivery costs, and power costs. These bottlenecks can be exacerbated by other factors, such as supply chain shortages.

[0004]

[0004] Therefore, there is a need for improved systems, devices, and methods that allow for reduced gas waste. Summary of the Invention

[0005]

[0005] The present disclosure relates generally to a gas recycling system, a substrate processing system, and related apparatus and methods for semiconductor manufacturing. In one or more embodiments, unreacted gas from a chamber may be recycled, reused, and reused one or more times.

[0006] In one embodiment, a gas recycling system for connecting to a processing chamber includes a pump fluidly connected to one or more outlet passages of the processing chamber and configured to exhaust gas from the processing chamber. The system includes one or more filtration devices in fluid communication with the pump, whereby gas flows from the pump to the one or more filtration devices. The one or more filtration devices are configured to remove one or more impurities from the gas to produce a filtered gas having a purity of 99.9% or greater. The system further includes a gas supply system in fluid communication with the one or more filtration devices, whereby filtered gas flows from the one or more filtration devices to the gas supply system. The gas supply system is configured to fluidly connect to one or more inlet passages of the processing chamber.

[0007] In one embodiment, a system for substrate processing includes a processing chamber, the processing chamber including a chamber body at least partially defining an interior space. The processing chamber includes a plurality of inlet passages, one or more outlet passages, a substrate support disposed in the interior space, and one or more heat sources configured to heat the interior space. The system includes a gas supply system fluidly coupled with the plurality of inlet passages to supply gas to the interior space of the processing chamber, and a gas recycling system fluidly coupled between the one or more outlet passages and the gas supply system. The gas recycling system includes a pump fluidly coupled with the one or more outlet passages to remove gas from the interior space of the processing chamber. The gas recycling system includes one or more filtration devices fluidly coupled between the pump and the gas supply system, such that gas flows from the pump to the one or more filtration devices. The one or more filtration devices are configured to remove one or more impurities from the gas to produce a filtered gas having a purity of 99.9% or greater. The one or more filtration devices are fluidly coupled with the gas supply system, such that filtered gas flows from the one or more filtration devices to the gas supply system.

[0008] In one embodiment, in the context of semiconductor manufacturing, a method for recycling gas includes pumping gas from an interior volume of a processing chamber. The method includes filtering the gas using a first filtration process, filtering the gas using a second filtration process to produce a filtered gas having a purity of 99.9% or greater, and flowing the filtered gas into a gas delivery system. The method includes reintroducing the filtered gas into the processing chamber using the gas delivery system.

[0009]

[0009] So that the above-mentioned features of the present disclosure can be understood in detail, a more particular description of the present disclosure briefly summarized above can be had by reference to embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the accompanying drawings depict only exemplary embodiments and therefore should not be considered to limit the scope of the present disclosure, as other equally effective embodiments may also be permitted. [Brief explanation of the drawings]

[0010] [Figure 1] 1 is a schematic cross-sectional view of a system for substrate processing, according to one embodiment. [Figure 2]

[0011] 2 is a schematic partial view of a purge supply system of a gas supply system, according to one embodiment. [Figure 3]

[0012] 1 is a schematic partial view of a cleaning delivery system according to one embodiment. [Figure 4]

[0013] 1 is a schematic partial view of a process delivery system, according to one embodiment. [Figure 5]

[0014] FIG. 1 is a schematic block diagram of a method for recycling gases in connection with semiconductor manufacturing, according to one embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0011]

[0015] For ease of understanding, where possible, identical reference numerals have been used to designate identical elements common to the figures. It is intended that elements and features of one embodiment may be beneficially incorporated in other embodiments without further description.

[0012]

[0016] The present disclosure relates generally to a gas recycling system, a substrate processing system, and related apparatus and methods for semiconductor manufacturing. In one or more embodiments, unreacted gas from a chamber can be recycled, reused, and reused one or more times.

[0013]

[0017] 1 is a schematic cross-sectional view of a system 101 for substrate processing, according to one embodiment. The system 101 includes a process chamber 100. In one or more embodiments, the process chamber 100 is a deposition chamber. In one embodiment, which is combinable with other embodiments, the process chamber 100 is an epitaxial deposition chamber. The process chamber 100 is used to grow an epitaxial film on a substrate 102. The process chamber 100 generates a crossflow of precursors across a top surface 150 of the substrate 102 to deposit the film.

[0014]

[0018] The processing chamber 100 includes an upper body 156, a lower body 148 disposed below the upper body 156, and a flow module 112 disposed between the upper body 156 and the lower body 148. The upper body 156, the flow module 112, and the lower body 148 form a chamber body. Disposed within the chamber body are a substrate support 106, an upper window 108 (e.g., an upper dome), a lower window 110 (e.g., a lower dome), a plurality of upper heat sources 141, and a plurality of lower heat sources 143.

[0015]

[0019] The substrate support 106 is disposed between the upper window 108 and the lower window 110. The substrate support 106 includes a support surface 123 that supports the substrate 102. A plurality of upper heat sources 141 are disposed between the upper window 108 and the lower window 110. The plurality of upper heat sources 141 form part of an upper heating module 155. The lid 154 may include a plurality of sensors (not shown) disposed in or on the upper heating module 155 to measure the temperature within the process chamber 100. A plurality of lower heat sources 143 are disposed between the lower window 110 and the floor 152. The plurality of lower heat sources 143 form part of the lower heating module 145. The upper window 108 is an upper dome and is formed of an energy transparent material, such as quartz. The lower window 110 is a lower dome and is formed of an energy transparent material, such as quartz.

[0016]

[0020] 1, the heat sources 141, 143 are lamps. Other heat sources are possible, for example, resistive heaters, light emitting diodes (LEDs), and / or lasers.

[0017]

[0021] The processing space 136 and the purge space 138 are formed between the upper window 108 and the lower window 110. The processing space 136 and the purge space 138 are part of an interior space that is at least partially defined by the upper window 108, the lower window 110, and one or more liners 163.

[0018]

[0022] The interior space has a substrate support 106 disposed therein. The substrate support 106 includes an upper surface on which the substrate 102 is disposed. The substrate support 106 is attached to a shaft 118. The shaft 118 is connected to a motion assembly 121. The motion assembly 121 includes one or more actuators and / or adjustment devices that move and / or adjust the shaft 118 and / or the substrate support 106 within the process space 136.

[0019]

[0023] The substrate support 106 may include lift pin holes 107 disposed therein. The lift pin holes 107 are sized to accommodate lift pins 132 for raising and lowering the substrate 102 from the substrate support 106 before and / or after a deposition process. The lift pins 132 may ride on lift pin stops 134 when the substrate support 106 is lowered from a processing position to a transfer position.

[0020]

[0024] The flow module 112 includes multiple inlet passages, including multiple process inlet passages 114 and multiple purge inlet passages 164. The flow module 112 includes one or more outlet passages, including one or more outlet passages 116. The multiple process inlet passages 114 and the multiple purge inlet passages 164 are positioned on an opposite side of the flow module 112 from the one or more outlet passages 116. One or more flow guides 117a, 117b are positioned below the multiple process inlet passages 114 and the one or more outlet passages 116. The one or more flow guides 117a, 117b are positioned above the purge inlet passage 164. In one or more embodiments, the one or more flow guides 117a, 117b include a preheat ring. One or more liners 163 are positioned on the interior surface of the flow module 112 to protect the flow module 112 from reactive gases used during deposition and / or cleaning processes. The process inlet passage 114 and the purge inlet passage 164 are each positioned to provide a gas flow parallel to the top surface 150 of the substrate 102 disposed within the process space 136. The process inlet passage 114 and the purge inlet passage 164 are fluidly connected to a gas supply system 190, which regulates the supply of gas to the process chamber 100. One or more process gas sources 151, one or more cleaning gas sources 153, and one or more purge gas sources 162 are fluidly connected to the gas supply system 190. In one or more embodiments, the one or more process gas sources 151 include one or more reactive gas sources and one or more carrier gas sources.

[0021]

[0025] A gas recycling system 199 is fluidly connected to the gas supply system 190 and supplies recycled gas to the gas supply system 190 for reuse in the processing chamber 100. The one or more outlet passages 116 are fluidly connected to an exhaust pump 157 (e.g., a vacuum pump). The exhaust pump 157 is fluidly connected to the gas recycling system 199 and pumps gas from the processing chamber 100 to a first flow distributor 181 of the gas recycling system 199. The first flow distributor 181 is in fluid communication with the exhaust pump 157.

[0022]

[0026] The first flow distributor 181 is fluidly connected to a first filtration device 182. The first filtration device 182 is fluidly connected to a second filtration device 184. The first flow distributor 181 is fluidly connected to a third filtration device 188. Using the first flow distributor 181, at least a portion of the gases exhausted from the processing chamber 100 can be routed to the first filtration device 182 and recycled back to the processing chamber 100 via the gas supply system 190. Using the first flow distributor 181, at least a portion of the gases exhausted from the processing chamber 100 can be routed to the third filtration device 188 through a bypass line 189 that bypasses the first and second filtration devices 182, 184.

[0023]

[0027] At least a portion of the gas may be directed to a bypass line 189 if it is unsuitable for reuse. At least a portion of the gas may be directed to the bypass line 189 to be recycled using a different recycling system (and then recycled to the gas supply system 190) if its composition differs from that used through the gas recycling system 199. In one or more embodiments, at least a portion of the gas directed to the bypass line 189 is stored, combusted, and / or recycled to the gas supply system 190 in a manner that is fluidly isolated from the first and second filtration devices 182, 184.

[0024]

[0028] Gas recycled through gas reuse system 199 flows from first filtration device 182 to second filtration device 184. Each of filtration devices 182, 184, 188 may include a scrubber, an electrochemical filter, a porous ceramic adsorbent-based system, a pressure swing adsorption-based system, a Pd adsorption-release membrane-based system, and / or other types of filtration devices. The present disclosure contemplates that one or more of first filtration device 182, second filtration device 184, and / or third filtration device 188 may be the same as or different from one another. In one or more embodiments, first and third filtration devices 182, 188 each include a scrubber, and second filtration device 184 includes an electrochemical filter.

[0025]

[0029] The scrubber used may include a pollution control device that uses a liquid, such as water, to remove particulate matter or gases from the gas exhausted from the process chamber 100. The gas enters the scrubber at or near the center of the scrubber, and the liquid rains down from the top to the bottom of the scrubber. The liquid captures contaminants while the exhausted gas escapes through the top of the scrubber, causing the contaminants to sink to the bottom. The electrochemical filter may be a hydrogen recovery system. The electrochemical filter may be an anode, electrolyte, and cathode device, where hydrogen ions are attracted to the electrolyte by the anode and combine at the cathode to form hydrogen gas (H).

[0026]

[0030] In one or more embodiments, the first filtration device 182 and the second filtration device 184 filter the gas (gas exhausted from the process chamber 100) to produce a filtered gas with a purity of 95% or greater. Purity refers to the concentration of an element (e.g., hydrogen (H)) in atomic percent. In one or more embodiments, the first filtration device 182 removes contaminants (e.g., pollutants) from the gas, and the second filtration device 184 separates one element (e.g., hydrogen) from another element (e.g., nitrogen and / or other gases). In one or more embodiments, the purity is 99% or greater, such as 99.9% or greater. In one or more embodiments, the purity is at least at the 5N level, such that the purity is 99.999% or greater. The gas recycle system 199 includes one or more filtration devices 182, 184. In one or more embodiments, a single filtration device may be used in the gas recycle system 199. In one or more embodiments, two or more filtration devices 182 , 184 may be used in the gas recycle system 199 .

[0027]

[0031] After flowing through the second filtration device 184, the filtered gas is compressed by a compressor 185 that is in fluid communication with the first and second filtration devices 182, 184. The second flow distributor 183 is fluidly connected to the compressor 185. In one or more embodiments, each of the first flow distributor 181 and / or the second flow distributor 183 includes a valve (e.g., a directional valve such as a three-way valve, etc.).

[0028]

[0032] The buffer tank 186 is fluidly connected to the compressor 185 via the second flow distributor 183. In one or more embodiments, at least a portion of the filtered gas is stored (e.g., at least temporarily for later use) in the buffer tank 186 before being delivered to the gas delivery system 190. The buffer tank 186 can facilitate pressurization of the filtered gas. In one or more embodiments, at least a portion of the filtered gas flows directly from the compressor 185 to the gas delivery system 190 and is (re)injected into the processing chamber 100.

[0029]

[0033] Using compressor 185 and / or buffer tank 186, the filtered gas is pressurized to a threshold pressure. In one or more embodiments, the threshold pressure is equal to or greater than the operating pressure for the filtered gas used in process chamber 100. In one or more embodiments, the operating pressure is the process pressure (e.g., 600 Torr or greater, such as in the range of 750 Torr to 770 Torr) used during a deposition process in process chamber 100. In one or more embodiments, the operating pressure is the cleaning pressure used during a cleaning process in process chamber 100 and / or the purge pressure used during a purge process in process chamber 100. In one or more embodiments, the threshold pressure is equal to or greater than a reservoir pressure (e.g., the pressure of buffer tank 186). In one or more examples, the reservoir pressure is in the range of 0 bar to 10 bar. In one or more embodiments, the threshold pressure is 15 psig or greater, such as 75 psig or greater, such as 100 psig or greater.

[0030]

[0034] The filtered gas produced using the gas recycling system 199 can be reused as a process gas, a cleaning gas, and / or a purge gas. In one or more embodiments, the filtered gas comprises hydrogen (H) and has a purity of hydrogen by atomic percent. Other components of the filtered gas are also contemplated.

[0031]

[0035] The one or more process gases supplied to the gas supply system 190 using the one or more process gas sources 151 may include one or more reactive gases (e.g., one or more of silicon (Si), phosphorus (P), and / or germanium (Ge)) and one or more carrier gases (e.g., one or more of nitrogen (N) and / or hydrogen (H)). The one or more purge gases supplied using the one or more purge gas sources 162 may include one or more inert gases (e.g., one or more of hydrogen (H), argon (Ar), helium (He), and / or nitrogen (N)). The one or more cleaning gases supplied using the one or more cleaning gas sources 153 may include one or more of hydrogen (H) and / or chlorine (Cl). In one embodiment, which can be combined with other embodiments, the one or more process gases include silicon phosphide (SiP) and / or phosphine (PH), and the one or more cleaning gases include hydrochloric acid (HCl). In the present disclosure, it is contemplated that carrier gases, purge gases, and / or cleaning gases are all candidates for recycling as described herein.

[0032]

[0036] The one or more outlet passages 116 may further be connected to or may include an exhaust system 178. The exhaust system 178 fluidly connects the one or more outlet passages 116 to an exhaust pump 157. The exhaust system 178 may aid in the controlled deposition of a layer on the substrate 102. The exhaust system 178 is positioned on an opposite side of the processing chamber 100 from the inlet passages 114, 164.

[0033]

[0037] As shown, the system 101 includes a controller 120 coupled to the process chamber 100, which is used to control processes and methods, such as the operation of the methods described herein. The controller 120 is coupled to a gas recycling system 199 (e.g., exhaust pump 157, first flow distributor 181, second flow distributor 183, first filter 182, second filter 184, and / or third filter 188) and a gas supply system 190. The controller 120 controls the first flow distributor 181 and the second flow distributor 183 and monitors the purity of the filtered gas (produced using the gas recycling system 199) and / or the exhaust gas (exhausted from the process chamber 100) using sensors located along the exhaust pump 157, the first filter 182, the second filter 184, the third filter 188, the gas supply system 190, and / or the buffer tank 186. By monitoring the purity of the gas, the controller 120 controls the flow distributors 181 , 183 and the gas supply system 190 to determine (and control) where the gas flows within the system 101 .

[0034]

[0038] Controller 120 includes a central processing unit (CPU), memory containing instructions, and support circuits for the CPU. Controller 120 controls various items directly or through other computers and / or controllers. In one or more embodiments, controller 120 is communicatively coupled to a dedicated controller, with controller 120 acting as a central controller.

[0035]

[0039] The controller 120 is any form of general-purpose computer processor used in industrial settings to control various substrate processing chambers and equipment and their associated sub-processors. The memory, or non-transitory computer-readable medium, is one or more of readily available memory, such as random access memory (RAM), dynamic random access memory (DRAM), static RAM (SRAM), and synchronous dynamic RAM (SDRAM (e.g., DDR1, DDR2, DDR3, DDR3L, LPDDR3, DDR4, LPDDR4, etc.)), read-only memory (ROM), floppy disk, hard disk, flash drive, or other form of local or remote digital storage. Support circuits of the controller 120 are coupled to the CPU (processor) to support the CPU. The support circuits include cache, power supplies, clock circuits, input / output circuits and subsystems, etc. The operating parameters (recycle gas pressure, recycle gas purity, recycle gas chemical composition) and operations are stored in memory as software routines that, when executed or invoked, cause the controller 120 to become a special-purpose controller that controls the operation of the various systems / chambers / recycling systems / modules described herein. The controller 120 is configured to perform any of the steps described herein. The instructions stored in memory, when executed, cause one or more of the steps of the method 500 described below to be performed.

[0036]

[0040] The various steps described herein may be performed automatically using the controller 120, or may be performed automatically and / or manually using specific processes performed by a user.

[0037]

[0041] The controller 120 is configured to adjust the output for controlling the system 101 based on the sensor readings, the system model, and the stored readings and calculations. The controller 120 includes embedded software and correction algorithms for calibrating the measurements. The controller 120 may include one or more machine learning and / or artificial intelligence algorithms that estimate optimized parameters for the deposition, purging, and / or cleaning processes. The one or more machine learning and / or artificial intelligence algorithms may use, for example, regression models (such as linear regression models) or clustering techniques to estimate the optimized parameters. The algorithms may be unsupervised or supervised.

[0038]

[0042] One or more machine learning and / or artificial intelligence algorithms can optimize parameters used for the reclamation process, which can include, for example, purity, time in buffer tank 186, flow rate through first and second filtration devices 182, 184, flow rate through third filtration device 188, and / or threshold pressure.

[0039]

[0043] In one or more embodiments, the gas supply system 190 is responsible for supplying all gases to the processing chamber 100, whether they come from the gas sources 151, 153, 162 or from the gas recycling system 199. The gas supply system 190 is controlled by the controller 120. Three internal systems of the gas supply system are depicted in Figures 2, 3, and 4, as described below.

[0040]

[0044] 2 is a schematic partial view of a purge supply system 200 of the gas supply system 190, according to one embodiment. The purge supply system 200 is part of the gas supply system 190.

[0041]

[0045] Gases are shown supplied to and distributed from a purge supply system 200. The purge supply system 200 supplies one or more purge gases to the processing chamber 100. The purge supply system 200 includes one or more purge header lines 202 and one or more mass flow controllers (MFCs) 207a-207e that are fluidly connected to one or more purge gas sources 162 via a first inlet line 220 and a second inlet line 210.

[0042]

[0046] One or more purge gas sources 162 supply one or more purge gases to one or more purge header lines 202 as primary purge gases. The one or more purge header lines 202 are fluidly connected to a gas recycle system 199. Filtered gas flows from the gas recycle system 199 to one or more purge header lines 202 upstream of one or more MFCs 207a-207e as secondary purge gases. In one or more embodiments, the one or more purge gas sources 162 supply nitrogen (N2) and hydrogen (H2) to the first inlet line 220 as primary purge gases. In one or more embodiments, the one or more purge gas sources 162 supply nitrogen (N2) to the second inlet line 210 as the primary purge gas, and the gas recycle system 199 supplies filtered gas (having hydrogen (H2) purity) to the second inlet line 210 as the secondary purge gas.

[0043]

[0047] The purge supply system 200 includes multiple outlet lines 212, 214, 216, 218, 222 fluidly connected to various inlet passages of the processing chamber 100. In one or more embodiments, the first outlet line 222 supplies purge gas to the process inlet passage 114, and the second outlet line 212 supplies purge gas to the motion assembly 121 (e.g., within the bellows of the motion assembly). In one or more embodiments, the third outlet line 214 supplies purge gas to the purge inlet passage 164 to purge the purge space 138, and the fourth outlet line 216 supplies purge gas to a transfer opening (e.g., a slit valve) of the processing chamber 100. In one or more embodiments, the fifth outlet line 218 supplies purge gas to the headspace of the processing chamber 100 (e.g., to purge the processing space 136 and / or the upper window 108).

[0044]

[0048] It is contemplated in the present disclosure that the first inlet line 220 may be fluidly isolated from the second inlet line 210. In one or more embodiments, a connecting line 224 may fluidly connect the first and second inlet lines 220, 210. A separation device 225 (e.g., an isolation valve, such as a two-way valve) selectively separates the fluids and allows fluid to flow from one of the inlet lines 210, 220 to the other of the inlet lines 210, 220. The connecting line 224 may control the mixing of the filtered gas with gas provided from one or more purge gas sources 162. For example, if the purge gas supplied through outlet lines 212, 214, 216, 218 is 75% filtered gas (e.g., recycled gas) and 25% gas supplied from one or more purge gas sources 162, then separator 225 can be partially opened to allow gas from first inlet line 220 to flow into outlet lines 212, 214, 216, 218. It is contemplated that connecting line 224 and separator 225 may be omitted in this disclosure. In one or more embodiments, filtered gas is supplied from the second outlet line to fifth outlet lines 212, 214, 216, 218, but not to first outlet line 222.

[0045]

[0049] MFCs 207a-207e, supply valves 208a-208e, and bypass valves 209a-209e may correspond to outlet lines 212, 214, 216, 218, and 222, respectively.

[0046]

[0050] 3 is a schematic partial view of a cleaning delivery system 300, according to one embodiment. The cleaning delivery system 300 is part of the gas delivery system 190.

[0047]

[0051] The cleaning delivery system 300 supplies one or more cleaning gases to the processing chamber 100. The cleaning delivery system 300 includes one or more MFCs 307a, 307b and one or more cleaning header lines 302, which are in fluid communication with one or more cleaning gas sources 153 via a first inlet line 310 and a second inlet line 320.

[0048]

[0052] One or more cleaning gas sources 153 supply one or more cleaning gases as primary cleaning gases to one or more cleaning header lines 302. The one or more cleaning header lines 302 are fluidly connected to a gas recycle system 199. Filtered gas flows from the gas recycle system 199 to one or more cleaning header lines 302 upstream of one or more MFCs 307a, 307b as secondary cleaning gases. In one or more embodiments, the one or more cleaning gas sources 153 supply chlorine (Cl) as the primary cleaning gas to a first inlet line 310, and the gas recycle system 199 supplies filtered gas (having hydrogen (H) purity) to the first inlet line 310 as secondary cleaning gas. In one or more embodiments, the one or more cleaning gas sources 153 supply hydrogen (H) and chlorine (Cl) as primary cleaning gases to a second inlet line 320.

[0049]

[0053] The cleaning supply system 300 includes multiple outlet lines 312, 314 fluidly connected to various inlet passages of the processing chamber 100. In one or more embodiments, the first outlet line 312 supplies a cleaning gas having a first flow rate that is higher than a second flow rate of the cleaning gas supplied using the second outlet line 314.

[0050]

[0054] It is contemplated that the first inlet line 310 may be fluidly isolated from the second inlet line 320, and the first outlet line 312 may be fluidly isolated from the second outlet line 314. A separator 315 (e.g., an isolation valve, such as a two-way valve) selectively separates fluids, allowing fluid to flow from one of the inlet lines 310, 320 to the other of the inlet lines 310, 320. A connecting line 324 may control mixing of the filtered gas with gas provided from one or more cleaning gas sources 153. It is contemplated that the connecting line 324 and separator 315 may be omitted. In one or more embodiments, filtered gas is provided to the first outlet line 312 (high flow rate) but not to the second outlet line 320 (low flow rate). In one or more embodiments, the separator 315 may be opened to allow more hydrogen to be provided to the first outlet line 312 in addition to the filtered gas.

[0051]

[0055] MFCs 307a, 307b, two supply valves 308a, 308b, 309a, 309b, and two bypass valves 310a, 310b, 311a, 311b may correspond to outlet lines 312, 314, respectively.

[0052]

[0056] 4 is a schematic partial view of a process delivery system 400, according to one embodiment. The process delivery system 400 is part of the gas delivery system 190.

[0053]

[0057] The process delivery system 400 supplies one or more process gases (which may include one or more precursor gases) to the process chamber 100. The process delivery system 400 includes multiple inlet lines 411, 421, 431, and 441 and multiple outlet lines 410, 420, 430, and 440. In one or more embodiments, the one or more process gas sources 151 provide chlorine (Cl) to a first inlet line 411 and a first outlet line 410, methylsilane (CHSiH) and argon (Ar) to a second inlet line 421 and a second outlet line 420, nitrogen (N) to a third inlet line 431 and a third outlet line 430, and hydrogen (H) to a fourth inlet line 441 and a fourth outlet line 440. In one or more embodiments, hydrogen (H) is a carrier gas for a reactive gas in the process gas (e.g., methylsilane (CHSiH)).

[0054]

[0058] In one or more embodiments, the one or more process gas sources 151 supply hydrogen (H) as a primary carrier gas to the fourth inlet line 441, and the gas recycle system 199 supplies filtered gas (having hydrogen (H) purity) as a secondary carrier gas to the fourth inlet line 441. In one or more embodiments, the filtered gas is supplied from the one or more process gas sources 151 without a primary carrier gas.

[0055]

[0059] A plurality of outlet lines 410, 420, 430, 440 are fluidly connected to the process inlet passage 114 of the processing chamber 100 to supply process gases during the deposition process. In one or more embodiments, filtered gas is supplied to the fourth outlet line 440 but not to the first through third outlet lines 410, 420, 430.

[0056]

[0060] Supply valves 408a, 408b, 408c, and 408d may correspond to outlet lines 410, 420, 430, and 440, respectively. Filters 409a and 409b may correspond to first outlet line 410 and second outlet line 420, respectively. It is also contemplated in this disclosure that an MFC may correspond to each of outlet lines 410, 420, 430, and 440.

[0057]

[0061] FIG. 5 is a schematic block diagram of a method 500 for recycling gases in connection with semiconductor manufacturing, according to one embodiment.

[0058]

[0062] Step 502 includes pumping gas from the interior space of the processing chamber. This gas may be spent gas used in a deposition process in the processing chamber 100. This gas may be pumped using the exhaust pump 157. This gas may be analyzed by the controller 120 to determine whether the gas should be sent to the first filtration device 182 or the third filtration device 188. In one or more embodiments, if the gas is suitable for reuse, it is sent to the first filtration device 182 via the first flow distributor 181. In one or more embodiments, if the gas is not suitable for reuse using the first and second filtration devices 182, 184, it is sent to the third filtration device 188 via the first flow distributor 181.

[0059]

[0063] Step 504 includes filtering the gas using a first filtration process (eg, in first filtration device 182).

[0060]

[0064] Step 506 includes filtering the gas using a second filtration process (e.g., in second filtration device 184) to produce a filtered gas having a purity (e.g., a purity described above). In one or more embodiments, the second filtration process is substantially the same as the first filtration process. In one or more embodiments, the second filtration process is different from the first filtration process. In one or more embodiments, the first filtration process is a scrubbing process and the second filtration process is an electrochemical filtration process.

[0061]

[0065] Optional step 507 includes pressurizing the filtered gas to at least a threshold pressure before reintroducing the filtered gas into the processing chamber.

[0062]

[0066] An optional step 508 includes storing the filtered gas (at least temporarily) in a buffer tank before reintroducing the filtered gas into the processing chamber.

[0063]

[0067] Step 510 includes flowing the filtered gas into the gas supply system (e.g., from the second flow distributor 183 or a buffer tank), which is then directed using the controller 120 to one or more of the purge supply system 200, the cleaning supply system 300, and / or the process supply system 400.

[0064]

[0068] Step 512 includes reintroducing the filtered gas into the processing chamber using the gas supply system. The filtered gas is supplied back to the processing chamber for reuse within the processing chamber. The filtered gas can be used as a purge gas (e.g., via purge supply system 200), a cleaning gas (e.g., as a high-flow HCl cleaning gas via cleaning supply system 300), and / or at least a portion of a process gas (e.g., as a carrier gas for a precursor gas via process supply system 400).

[0065]

[0069] Benefits of the present disclosure include recycling unreacted gases through a process chamber, reducing gas waste in semiconductor manufacturing, reducing emissions and carbon footprint, reducing gas and energy consumption, and reducing operational costs such as material, delivery, and / or electricity costs. As an example, gases that would otherwise be combusted are filtered (e.g., cleaned) and reused within the process chamber, reducing combustion energy consumption and saving energy and money. The recycled gas can be used for a variety of tasks, such as purging, cleaning, and / or processing (e.g., as a carrier gas) (e.g., depending on purity). For the purity levels described, utilizing gas recycling allows unreacted gases, such as hydrogen, to be reused for purging, cleaning, and / or processing, potentially reducing the amount of hydrogen gas required to operate the process chamber over time. In one or more embodiments, 75% or more (e.g., 75-85% or more) of the hydrogen used in the process chamber is recovered for reuse.

[0066]

[0070] It is contemplated that one or more aspects disclosed herein may be combined. By way of example, one or more aspects, features, components, processes, and / or characteristics of the processing chamber 100, the controller 120, the gas supply system 190, the gas recycling system 199, the flow distributors 181, 183, the filtration devices 182, 184, 188, the exhaust pump 157, the buffer tank 186, the purge supply system 200, the cleaning supply system 300, the process supply system 400, and / or the method 500 may be combined. Furthermore, it is contemplated that one or more aspects disclosed herein may include some or all of the advantages described above.

[0067]

[0071] While the above description is directed to embodiments of the present disclosure, other and additional embodiments of the disclosure may be devised without departing from the basic scope thereof, the scope of which is determined by the claims that follow.

Claims

1. 1. A gas recycling system for connection to a processing chamber, comprising: a pump fluidly connected to one or more outlet passages of the processing chamber and configured to exhaust gas from the processing chamber; one or more filtration devices in fluid communication with the pump such that the gas flows from the pump to the one or more filtration devices, the one or more filtration devices configured to remove one or more impurities from the gas to produce a filtered gas having a purity of at least 99.9%; a gas supply system in fluid communication with the one or more filtration devices such that the filtered gas flows from the one or more filtration devices to the gas supply system, the gas supply system being configured to be fluidly connected to one or more inlet passages of the processing chamber; a gas reuse system, including:

2. the one or more filtration devices: a first filtration device; a second filtration device in fluid communication between the first filtration device and the gas supply system such that the gas flows from the first filtration device to the second filtration device; and The gas reuse system of claim 1 , comprising:

3. a third filtration device in fluid communication between the pump and a bypass line that bypasses the one or more filtration devices; A controller including instructions that, when executed, cause a plurality of steps to be performed, the plurality of steps comprising: identifying a first portion and a second portion of the gas; directing the first portion of the gas to the first filtering device; and a controller directing the second portion of the gas to the third filtering device; The gas reuse system of claim 2 further comprising:

4. 3. The gas reuse system of claim 2, wherein the first filtration device is a scrubber and the second filtration device is an electrochemical filter.

5. The gas supply system includes: a purge supply system in fluid communication with one or more purge gas sources; a process delivery system in fluid communication with one or more reactive gas sources and one or more carrier gas sources; a cleaning supply system in fluid communication with one or more cleaning gas sources; The gas reuse system of claim 1 , comprising:

6. The gas reuse system of claim 5 , wherein the filtered gas flows to one or more of the purge supply system, the process supply system, or the cleaning supply system.

7. a buffer tank in fluid communication between the one or more filtration devices and the gas supply system; a compressor in fluid communication between the one or more filtration devices and the buffer tank, the compressor configured to compress the filtered gas; The gas reuse system of claim 1 further comprising:

8. 1. A system for substrate processing, comprising:

1. A processing chamber comprising: a chamber body at least partially defining an interior space; Multiple entrance passages; one or more exit passages; a substrate support disposed in the interior space; a processing chamber including one or more heat sources configured to heat the interior space; a gas supply system in fluid communication with the plurality of inlet passages for supplying gas to the interior volume of the processing chamber; a gas recycling system in fluid communication between the one or more outlet passages and the gas supply system, a pump in fluid communication with the one or more outlet passages for removing the gas from the interior volume of the processing chamber; a gas recycling system including one or more filtration devices in fluid communication between the pump and the gas supply system, such that the gas flows from the pump to the one or more filtration devices, the one or more filtration devices configured to remove one or more impurities from the gas to produce a filtered gas having a purity of 99.9% or greater, the one or more filtration devices in fluid communication with the gas supply system, such that the filtered gas flows from the one or more filtration devices to the gas supply system; A system for processing a substrate, comprising:

9. The one or more filtering devices include a first filtering device that is a scrubber, and the purity is hydrogen by atomic percent (H ２ 9. The gas reuse system of claim 8, wherein the concentration of

10. The gas reuse system of claim 8 , wherein the one or more filtration devices further include a second filtration device that is an electrochemical filter.

11. the gas supply system a purge supply system including one or more purge header lines in fluid communication with one or more purge gas sources and one or more first mass flow controllers (MFCs); a process delivery system in fluid communication with one or more reactive gas sources and one or more carrier gas sources; a cleaning supply system including one or more cleaning header lines in fluid communication with one or more cleaning gas sources and one or more second mass flow controllers (MFCs); The system of claim 8 , comprising:

12. 12. The system of claim 11, wherein the filtered gas flows from the one or more filtration devices to the one or more purge header lines of the purge supply system upstream of the one or more first MFCs.

13. 12. The gas reuse system of claim 11, wherein the filtered gas flows from the one or more filtration devices to the one or more wash header lines of the wash supply system upstream of the one or more second MFCs.

14. 12. The gas reuse system of claim 11, wherein the filtered gas flows from the one or more filtration devices to the process delivery system, and the filtered gas is a carrier gas.

15. 1. A method of recycling gas in connection with semiconductor manufacturing, comprising: Pumping gas from the interior space of the processing chamber; filtering the gas using a first filtration process; filtering the gas using a second filtration process to produce a filtered gas having a purity of at least 99.9%; flowing the filtered gas into a gas supply system; and reintroducing the filtered gas into the processing chamber using the gas supply system. A method comprising:

16. flowing the filtered gas into the gas supply system comprises: supplying the filtered gas to the purge supply system as a supplemental purge gas in addition to the primary purge gas supplied to the purge supply system of the gas supply system.

16. The method of claim 15, comprising:

17. flowing the filtered gas into the gas supply system comprises: supplying the filtered gas as a carrier gas to a process supply system of the gas supply system while supplying a reactive gas to the process supply system.

16. The method of claim 15, comprising:

18. flowing the filtered gas into the gas supply system comprises: supplying the filtered gas to a cleaning supply system of the gas supply system as a supplemental cleaning gas in addition to the primary cleaning gas supplied to the cleaning supply system.

16. The method of claim 15, comprising:

19. 16. The method of claim 15, further comprising storing the filtered gas in a buffer tank before reintroducing the filtered gas into the processing chamber.

20. 16. The method of claim 15, further comprising pressurizing the filtered gas to at least a threshold pressure before reintroducing the filtered gas into the processing chamber.

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