Substrate support and transfer device that accommodates substrate deformation

Abstract

Embodiments of the present disclosure relate to substrate supports, transfer devices, processing chambers, and related components and methods for substrate deformation (e.g., bending). In one or more embodiments, substrates used in connection with the present disclosure may be deformed (e.g., bent) before and / or during processing, such as epitaxial deposition. In one embodiment, a substrate support usable in a semiconductor manufacturing process includes a support body. The support body includes an outer surface, a concave surface recessed relative to the outer surface, and a pocket surface between the outer surface and the concave surface. The concave surface and the pocket surface at least partially define a pocket in the support body. The support body includes a plurality of supports protruding relative to the concave surface. The substrate support includes a barrier in contact with the plurality of supports. The barrier includes a plurality of barrier supports.

Description

[Technical Field]

[0001] FIELD OF THE DISCLOSURE

[0001] Embodiments of the present disclosure relate to substrate supports, transfer apparatus, processing chambers, and related components and methods for accommodating substrate deformation (e.g., curvature). In one or more embodiments, substrates used in connection with the present disclosure may be deformed (e.g., curved) before and / or during processing, such as epitaxial deposition. [Background technology]

[0002]

[0002] Semiconductor substrates are processed for a variety of applications, including the fabrication of integrated devices and microdevices. Substrates can undergo deformation (e.g., bending), which can cause temperature non-uniformities throughout processing and, consequently, deposition non-uniformities. For one thing, this deformation can change the amount of surface area of ​​the substrate that contacts other components. For another example, this deformation can change the distance of portions of the substrate relative to other components. These problems can be exacerbated by relatively complex deposition processes, such as high-temperature epitaxial deposition processes.

[0003]

[0003] Therefore, there is a need for improvements to substrate supports, transfer apparatus, processing chambers, and related components and methods that contribute to deformation and reduce deposition non-uniformity. Summary of the Invention

[0004]

[0004] Embodiments of the present disclosure relate to substrate supports, transfer apparatus, processing chambers, and related components and methods for substrate deformation (e.g., bending). In one or more embodiments, substrates used in connection with the present disclosure may be deformed (e.g., bent) before and / or during processing, such as epitaxial deposition.

[0005] In one embodiment, a substrate support usable in a semiconductor manufacturing process includes a support body. The support body includes an outer surface, a concave surface recessed relative to the outer surface, and a pocket surface between the outer surface and the concave surface. The concave surface and the pocket surface at least partially define a pocket in the support body. The support body includes a plurality of supports protruding relative to the concave surface. The substrate support includes a barrier in contact with the plurality of supports. The barrier includes a plurality of barrier supports.

[0006] In one embodiment, a processing chamber usable in semiconductor manufacturing includes a window at least partially defining a processing space, a plurality of heat sources configured to heat the processing space, and a substrate support disposed within the processing space. The substrate support includes a support body. The support body includes an outer surface, a concave surface recessed relative to the outer surface, a pocket surface between the outer surface and the concave surface, and a plurality of supports protruding relative to the concave surface. The substrate support includes a barrier in contact with the plurality of supports. The barrier includes a plurality of barrier supports.

[0007] In one embodiment, a transfer apparatus for moving substrates in connection with semiconductor manufacturing includes a transfer body having an outer surface, an arcuate concave surface recessed relative to the outer surface, and a pocket surface between the outer surface and the arcuate concave surface.

[0008]

[0008] So that the above-mentioned features of the present disclosure can be understood in detail, a more particular description of the present disclosure briefly summarized above can be had by reference to embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the accompanying drawings illustrate only exemplary embodiments and therefore should not be considered as limiting the scope of the present disclosure, which may admit of other equally effective embodiments. [Brief explanation of the drawings]

[0009] [Figure 1] 1 is a schematic cross-sectional side view of a processing chamber according to one embodiment. [Figure 2]

[0010] 2 is a schematic cross-sectional side view of the substrate support shown in FIG. 1 according to one embodiment. [Figure 3]

[0011] 3 is a schematic side view of the barrier shown in FIG. 2 according to one embodiment. [Figure 4]

[0012] FIG. 4 is a schematic top view of the barrier shown in FIGS. 2-3, according to one embodiment. [Figure 5]

[0013] FIG. 5 is a schematic bottom view of the barrier shown in FIGS. 2-4, according to one embodiment. [Figure 6]

[0014] 3 is a schematic top view of the support body shown in FIG. 2 according to one embodiment. [Figure 7]

[0015] 2 is a schematic cross-sectional side view of a substrate support according to one embodiment. [Figure 8]

[0016] 1 is a schematic perspective view of a transfer device according to one embodiment; [Figure 9]

[0017] 9 is a schematic cross-sectional side view of the transfer device shown in FIG. 8, according to one embodiment. [Figure 10]

[0018] 1 is a schematic cross-sectional side view of a transfer device according to one embodiment. [Figure 11]

[0019] 1 is a schematic block diagram of a substrate processing method for semiconductor manufacturing, according to one embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0010]

[0020] For ease of understanding, where possible, the same reference numerals have been used to designate identical elements that are common to multiple figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.

[0011]

[0021] Embodiments of the present disclosure relate to substrate supports, transfer apparatus, processing chambers, and related components and methods for substrate deformation (e.g., bending). In one or more embodiments, substrates used in connection with the present disclosure may be deformed (e.g., bent) before and / or during processing, such as epitaxial deposition.

[0012]

[0022] Deformations can occur, for example, in connection with three-dimensional dynamic random access memory (3D DRAM) deposition processes or epitaxial deposition processes that deposit relatively thick films that can cause staining.

[0013]

[0023] 1 is a schematic cross-sectional side view of a processing chamber 100 according to one embodiment. The processing chamber 100 is a deposition chamber. In one embodiment, which can be combined with other embodiments, the processing chamber 100 is an epitaxial deposition chamber. The processing chamber 100 is used to grow an epitaxial film on a substrate 102. The processing chamber 100 generates a cross-flow of precursors across a top surface 150 of the substrate 102.

[0014]

[0024] The processing chamber 100 includes an upper body 156, a lower body 148 disposed below the upper body 156, and a flow module 112 disposed between the upper body 156 and the lower body 148. The upper body 156, the flow module 112, and the lower body 148 form the chamber body. Disposed within the chamber body are a substrate support 106, an upper window 108 (e.g., an upper dome), a lower window 110 (e.g., a lower dome), a plurality of upper heat sources 141, and a plurality of lower heat sources 143. As shown, a controller 120 is coupled to the processing chamber 100 and is used to control processes and methods, such as the operation of the methods described herein. The controller 120 and the processing chamber 100 may be part of a substrate processing system.

[0015]

[0025] 1, the heat sources 141, 143 are lamps. Other heat sources are possible, for example, resistive heaters, light emitting diodes (LEDs), and / or lasers.

[0016]

[0026] The substrate support 106 is disposed between the upper window 108 and the lower window 110. The substrate support 106 includes a support surface 123 that supports the substrate 102. The upper heat sources 141 are disposed between the upper window 108 and the lid 154. The upper heat sources 141 form part of an upper heating module 155. The lid 154 may include sensors (e.g., pyrometers) disposed therein or thereon to measure the temperature within the processing chamber 100. The lower heat sources 143 are disposed between the lower window 110 and the chamber floor 152. The lower heat sources 143 form part of the lower heating module 145. The upper window 108 is an upper dome and is at least partially formed of an energy transparent material, such as quartz. The lower window 110 is a lower dome and is at least partially formed of an energy transparent material, such as quartz.

[0017]

[0027] The processing space 136 and the purge space 138 are positioned between the upper window 108 and the lower window 110. The processing space 136 and the purge space 138 are part of an interior space defined at least in part by the upper window 108, the lower window 110, and one or more liners 163. The upper window 108 at least partially defines the processing space 136.

[0018]

[0028] The window 108 includes a first surface 111 that may be flat or concave (in the embodiment shown in FIG. 1 , the first surface 111 is flat). The upper window 108 includes a second surface 113 that is convex. The second surface 113 faces the substrate support 106. Other shapes for the upper window 108 are contemplated in this disclosure. The upper window 108 includes an inner portion 122 and an outer portion 124. The first surface 111 and the second surface 113 are at least a portion of the inner portion 122. The inner portion 122 is transparent, and the outer portion 124 is opaque. The outer portion 124 is at least partially received in one or more sidewalls of the processing chamber 100 (e.g., in the flow module 112).

[0019]

[0029] The interior space has a substrate support 106 disposed therein. The substrate support 106 includes an upper surface on which the substrate 102 is disposed. The substrate support 106 is connected to a shaft 118. In one or more embodiments, the substrate support 106 is connected to the shaft 118 via a plurality of arms 119 connected to the shaft 118. The shaft 118 is connected to a motion assembly 121. The motion assembly 121 includes one or more actuators and / or adjustment devices that move and / or adjust the shaft 118 and / or the substrate support 106 within the process space 136.

[0020]

[0030] The substrate support 106 may include lift pin holes 107 disposed therein. The lift pin holes 107 are sized to accommodate lift pins 132 for lifting the substrate 102 from the substrate support 106 either before or after a deposition process. The lift pins 132 may ride on lift pin stops 134 when the substrate support 106 is lowered from a processing position to a transfer position. The lift pin stops 134 may be coupled to the second shaft 104.

[0021]

[0031] The flow module 112 includes multiple gas inlets 114, multiple purge gas inlets 164, and one or more gas exhaust outlets 116. The multiple gas inlets 114 and the multiple purge gas inlets 164 are positioned on the opposite side of the flow module 112 from the one or more gas exhaust outlets 116. One or more flow guides 117 are positioned below the multiple gas inlets 114 and the one or more gas exhaust outlets 116. The one or more flow guides may include, for example, one or more preheat rings. The one or more flow guides 117 are positioned above the purge gas inlets 164. One or more liners 163 are positioned on the inner surface of the flow module 112 to protect the flow module 112 from reactive gases used during deposition and / or cleaning processes. The gas inlets 114 and the purge gas inlets 164 are each positioned to flow gases parallel to the top surface 150 of the substrate 102 disposed in the process space 136. The gas inlet 114 is fluidly connected to one or more process gas sources 151 and one or more cleaning gas sources 153. The purge gas inlet 164 is fluidly connected to one or more purge gas sources 162 and / or one or more cleaning gas sources 153. The one or more gas exhaust outlets 116 are fluidly connected to an exhaust pump 157. The one or more process gases supplied using the one or more process gas sources 151 may include one or more reactive gases (e.g., one or more of silicon (Si), phosphorus (P), and / or germanium (Ge)) and one or more carrier gases (e.g., one or more of nitrogen (N) and / or hydrogen (H)). The one or more purge gases supplied using the one or more purge gas sources 162 may include one or more inert gases (e.g., one or more of argon (Ar), helium (He), hydrogen (H), and / or nitrogen (N)). The one or more cleaning gases provided using the one or more cleaning gas sources 153 may include one or more of hydrogen (H) and / or chlorine (Cl). In one embodiment, which can be combined with other embodiments, the one or more process gases include silicon phosphide (SiP) and / or phosphine (PH), and the one or more cleaning gases include hydrochloric acid (HCl).

[0022]

[0032] The one or more gas exhaust outlets 116 may further be connected to or may include an exhaust system 178. The exhaust system 178 fluidly connects the one or more gas exhaust outlets 116 to an exhaust pump 157. The exhaust system 178 may aid in controlled deposition of a layer on the substrate 102. The exhaust system 178 is positioned on an opposite side of the processing chamber 100 from the flow module 112.

[0023]

[0033] Controller 120 includes a central processing unit (CPU), memory containing instructions, and support circuits for the CPU. Controller 120 controls various items directly or through other computers and / or controllers. In one or more embodiments, controller 120 is communicatively coupled to a dedicated controller, with controller 120 acting as a central controller.

[0024]

[0034] The controller 120 is any form of general-purpose computer processor used in industrial settings to control various substrate processing chambers and equipment and their associated sub-processors. The memory, or non-transitory computer-readable medium, is one or more of readily available memory, such as random access memory (RAM), dynamic RAM (DRAM), static RAM (SRAM), and synchronous DRAM (SDRAM (e.g., DDR1, DDR2, DDR3, DDR3L, LPDDR3, DDR4, LPDDR4, etc.)), read-only memory (ROM), floppy disk, hard disk, flash drive, or other form of local or remote digital storage. The support circuits of the controller 120 are coupled to the CPU (processor) to support the CPU. The support circuits include cache, power supplies, clock circuits, input / output circuits and subsystems, etc. The operating parameters (e.g., temperature of the substrate 102, temperature of the substrate support 106, and / or pressure and / or temperature of the process gases) and operations are stored in memory as software routines that, when executed or invoked, cause the controller 120 to become a special-purpose controller and control the operation of the various chambers / modules described herein. The controller 120 is configured to perform any of the steps described herein. The instructions stored in memory, when executed, cause one or more of the steps of the method 1100 described below to be performed.

[0025]

[0035] The various steps described herein (e.g., steps of method 1100) may be performed automatically using controller 120, or may be performed automatically or manually using specific processes performed by a user.

[0026]

[0036] The controller 120 is configured to control the rotational position, heating, and gas flow through the processing chamber 100 by providing outputs to the control of the heat sources 141, 143, gas flow, and motion assembly 121. The controls include control of the upper heat source 141, the lower heat source 143, the process gas source 151, the purge gas source 162, the motion assembly 121, and the exhaust pump 157.

[0027]

[0037] The controller 120 is configured to adjust the control output based on the sensor readings, the system model, and the stored readings and calculations. The controller 120 includes embedded software and correction algorithms for calibrating the measurements. The controller 120 may include one or more machine learning and / or artificial intelligence algorithms that estimate optimized parameters for the deposition, purging, and / or cleaning processes. The one or more machine learning and / or artificial intelligence algorithms may use, for example, regression models (such as linear regression models) or clustering techniques to estimate the optimized parameters. The algorithms may be unsupervised or supervised.

[0028]

[0038] Substrates (e.g., substrate 102) are transferred into and out of the interior volume of processing chamber 100 through a transfer door 137 (e.g., a slit valve). When the transfer door 137 is open, the transfer apparatus (and the substrate support supported thereon) may extend through the transfer door 137 into the interior volume so that the lift pins 132 can lift the substrate from the transfer apparatus and place it on the substrate support 106 for processing. After processing, the lift pins 132 can lift the substrate from the substrate support 106 and place it on the transfer apparatus, which can be retracted through the open transfer door 137 to remove the substrate from processing chamber 100.

[0029]

[0039] FIG. 2 is a schematic cross-sectional side view of the substrate support 106 shown in FIG. 1, according to one embodiment.

[0030]

[0040] The substrate support 106 includes a support body 210. In one or more embodiments, the support body 210 is part of a susceptor (e.g., a pedestal). The support body 210 includes an outer surface 211, a concave surface 212 recessed relative to the outer surface 211, and a pocket surface 213. The pocket surface 213 is between the outer surface 211 and the concave surface 212. The concave surface 212 and the pocket surface 213 at least partially define a pocket 214 in the support body 210. The pocket has a trapezoidal cross-sectional shape. The substrate support 106 includes a plurality of supports 215 that protrude relative to the concave surface 212 and extend into the pocket 214. In one or more embodiments, each of the plurality of supports 215 is hemispherical (e.g., hemispherical or semi-oval). The depth D1 of the pocket 214 is less than 1.0 mm. In one or more embodiments, the depth D1 is within a range of 0.7 mm to 0.8 mm. In one or more embodiments, the depth D1 is approximately 0.75 mm. The support body 210 includes a plurality of gas openings 207 extending between a pocket surface 213 of the support body 210 and a second outer surface 208. The second outer surface 208 is opposite the outer surface 211. The plurality of gas openings 207 allow gas flowing within the purge space 138 to enter and exit a space 209 between the recessed surface 212 and the backside of the substrate 102. The gas within the space 209 may allow process gas to flow into the space and reduce or eliminate deposition on the backside of the substrate 102. The gas in the space 209 can be used to center the substrate 102 relative to the support body 210. The gas can include a purge gas and / or a cleaning gas. Gravity can be used to guide the substrate 102 along the pocket surface 213 to position and / or center the substrate 102 relative to the support body 210.

[0031]

[0041] The pocket surface 213 has a surface roughness (Ra) of less than 15 microinches. In one or more embodiments, the surface roughness (Ra) is in the range of 6 microinches to 12 microinches. The surface roughness (Ra) can be achieved, for example, by polishing the pocket surface 213. In one or more embodiments, the polishing is mechanical polishing. Other polishing techniques (e.g., chemical polishing or chemical-mechanical polishing) are contemplated. Other surface treatment techniques for achieving the surface roughness (Ra) are also contemplated.

[0032]

[0042] The pocket surface 213 is tapered and has a taper angle A1 relative to the concave surface 212. In one or more embodiments, the taper angle A1 is 45 degrees or greater, such as 60 degrees or greater. In one or more embodiments, the taper angle A1 is within a range of 45 degrees to 90 degrees, such as 70 degrees to 85 degrees. The taper angle A1 allows for polishing the pocket surface 213, reducing or eliminating intrusion of process gases behind the substrate 102, reducing displacement of the substrate 102 during processing, reducing or eliminating the contact area between the substrate 102 and the support body 210, and improving thermal and deposition uniformity. In the present disclosure, the pocket surface 213 is contemplated to be arcuate.

[0033]

[0043] The substrate support 106 includes a barrier 230 in contact with the plurality of supports 215. The barrier 230 can function as a thermal barrier between the substrate 102 and the support body 210, thereby achieving thermal uniformity across the substrate 102 and enhancing deposition uniformity across the substrate 102. The barrier 230 includes a barrier plate 231 and a plurality of barrier supports 235 that protrude relative to a first side of the barrier plate 231. In one or more embodiments, each barrier support 235 of the plurality of barrier supports 235 contacts at least two of the plurality of supports 215 of the support body 210. In one or more embodiments, each barrier support 235 of the plurality of barrier supports 235 contacts three or more (e.g., four or more) of the plurality of supports 215 of the support body 210. The barrier 230 includes a plurality of second barrier supports 240 that protrude relative to a second side of the barrier plate 231. The second barrier supports 240 support the substrate 102, such as during epitaxial deposition processing of the substrate 102. In one or more embodiments, each of the plurality of barrier supports 235 and each of the plurality of second barrier supports 240 are hemispherical. In one or more embodiments, the support body 210 and the barrier 230 are each formed of silicon carbide (SiC) or graphite coated with SiC.

[0034]

[0044] The concave surface 212 has an outer radius OR1. The plurality of barrier supports 235 and the plurality of second barrier supports 240 are aligned at radial positions 236 that are a ratio of the outer radius OR1. In one or more embodiments, this ratio is in the range of 0.4 to 0.6, such as in the range of 0.45 to 0.55. In one or more embodiments, this ratio is 0.5. In one or more embodiments, the radial positions 236 are aligned with the geometric centers of the barrier supports 235 and the second barrier supports 240. The outer radius OR1 and the radial positions 236 are considered relative to the geometric center 203 of the support body 210. The barrier supports 235 and the second barrier supports 240 are positioned at a radius R1 relative to the geometric center 203. The radius R1 is a ratio of the radius R2 of the substrate 102. In one or more embodiments, the radius R1 is a ratio of the radius R2 of the substrate 102, and the radius ratio is in the range of 0.4 to 0.6, such as in the range of 0.45 to 0.55. In one or more embodiments, the radius ratio is 0.5. In one or more embodiments, the radius R1 is in the range of 65 mm to 85 mm, such as 75 mm. The radial position 236 of the barrier supports 235, 240 may be aligned with a portion of the substrate 102 that remains substantially unchanged during processing deformation, thereby promoting uniformity and more consistently maintaining a reduced or eliminated contact area between the substrate 102 and the support body 210.

[0035]

[0045] Each barrier support 235 may include one or more outer arcuate surfaces that contact one or more outer arcuate surfaces of the support 215. The one or more outer arcuate surfaces of the barrier support 235 have a radius of curvature that is approximately equal to (e.g., no more than 10% different from) the radius of curvature of the one or more outer arcuate surfaces of the support 215. Each second barrier support 240 may include one or more outer arcuate surfaces. The one or more outer arcuate surfaces of the second barrier support 240 have a radius of curvature that is approximately equal to (e.g., no more than 10% different from) the radius of curvature of the one or more outer arcuate surfaces of the barrier support 235. The radii of curvature and the blending thereof allow for a reduced contact area between the barrier 230 and the support body 210, which promotes improved thermal and deposition uniformity.

[0036]

[0046] In the embodiment shown in FIG. 2 , the substrate 102 has an initial deformation prior to processing (e.g., is pre-curved upon entering the processing chamber 100). The substrate 102 may deform (e.g., bend) during processing, as represented by the phantom line deformation location 202 in FIG. 2 , and the substrate 102 may deform in the opposite direction to cause a subsequent deformation. For example, the substrate 102 may deform from a concave orientation to a convex orientation. The deformation may be caused, for example, by attempting to expand one or more film layers epitaxially deposited on the substrate 102 during processing. The support body 210 and the barrier 230 provide stable support for the substrate 102 during deformation (e.g., during processing), which promotes reduced substrate 102 misalignment, fewer defects, increased throughput, improved device performance, and improved deposition uniformity (e.g., center-to-edge uniformity).

[0037]

[0047] The fused section 238 can fuse the barrier support 235 of the barrier 230 to the support 215 of the support body 210. For example, particles may form between the barrier support 235 and the support 215 to form the fused section 238. As another example, a portion of the barrier support 235 and / or the support 215 may melt to form the fused section 238.

[0038]

[0048] The supports 215, barrier supports 235, second barrier supports 240, and fusion section 238 promote heat spreading, thermal uniformity (and deposition uniformity).

[0039]

[0049] FIG. 3 is a schematic side view of the barrier 230 shown in FIG. 2, according to one embodiment.

[0040]

[0050] FIG. 4 is a schematic top view of the barrier 230 shown in FIGS. 2-3, according to one embodiment.

[0041]

[0051] FIG. 5 is a schematic bottom view of the barrier 230 shown in FIGS. 2-4, according to one embodiment.

[0042]

[0052] The barrier plate 231 is a ring. The plurality of second barrier supports 240 are circumferentially offset from the plurality of barrier supports 235, with the second barrier supports 240 offset from the barrier supports 235 in a linear radial outward direction relative to the geometric center 232 of the barrier plate 231 (similar to that shown for radius R1). In the illustrated embodiment, the barrier 230 includes eight barrier supports 235 and eight second barrier supports 240. It is contemplated that a different number of barrier supports 235 and second barrier supports 240 (e.g., 12) may be used in this disclosure.

[0043]

[0053] FIG. 6 is a schematic top view of the support body 210 shown in FIG. 2, according to one embodiment.

[0044]

[0054] Some of the supports 215 of the support body 210 are not shown in FIG. 6 . This disclosure contemplates that the number of supports 215 may differ from that shown in the drawings described herein. This disclosure contemplates that the location of the supports 215 may differ from that shown in the drawings described herein. As an example, at least some of the supports 215 shown in FIG. 6 may be omitted. As another example, the supports 215 may be circumferentially disposed between the supports 215 shown in FIG. 6 , the supports 215 may be disposed radially inward of the supports 215 shown in FIG. 6 , and / or the supports 215 may be disposed radially outward of the supports 215 shown in FIG. 6 .

[0045]

[0055] Figure 7 is a schematic cross-sectional side view of a substrate support 706, according to one embodiment. The substrate support 706 may be used, at least in part, in place of the substrate support 106 shown in Figure 1. The substrate support 706 is similar to the substrate support 106 shown in Figures 1 and 2, including one or more aspects, features, components, processes, and / or properties thereof.

[0046]

[0056] 7, the barrier includes a plurality of barrier supports 735. The plurality of barrier supports 735 are spherical (e.g., spherical or ovoid in shape). It is contemplated in the present disclosure that the barrier plate may be omitted, such that the barrier supports 735 may be moved into position individually (e.g., prior to fusing).

[0047]

[0057] FIG. 8 is a schematic perspective view of a transfer device 800, according to one embodiment.

[0048]

[0058] 9 is a schematic cross-sectional side view of the transfer apparatus 800 shown in FIG. 8, according to one embodiment. The transfer apparatus 800 is for moving substrates (e.g., substrate 102) in connection with semiconductor manufacturing. For example, the transfer apparatus 800 can move substrates into and out of the processing chamber 100 through the transfer door 137.

[0049]

[0059] The transfer device 800 includes a transfer body 802. The transfer body 802 includes one or more outer surfaces 803, one or more arcuate concave surfaces 804 that are recessed relative to the outer surfaces 803, and one or more pocket surfaces 805 between the one or more outer surfaces 803 and the arcuate concave surfaces 804. In one or more embodiments, the transfer body 802 is a blade, such as a robot blade that attaches to a transfer robot in a transfer chamber. In one or more embodiments, the transfer body 802 includes a wrist 810 and multiple arms 811. In one or more embodiments, the transfer body 802 is formed of quartz. The arcuate concave surfaces 804 may span one or more (e.g., all) of the multiple arms 811. The one or more pocket surfaces 805 may be tapered or arcuate. The one or more pocket surfaces 805 may have a taper angle that is the same as or less than the taper angle A1 described above.

[0050]

[0060] One or more pocket surfaces 805 are processed (e.g., polished) to have a surface roughness (Ra) as described above relative to pocket surface 213. Arcuate concave surface 804 is hemispherical and has a radius of curvature RC1 that is in the range of 10.5 meters to 12.0 meters. In one or more embodiments, radius of curvature RC1 is approximately 11.25 meters (e.g., 11.2505 meters).

[0051]

[0061] Other values ​​for the radius of curvature RC1 are also contemplated. In one or more embodiments, the radius of curvature RC1 is determined and set according to the following Equation 1 (where R is the radius of curvature, DED is the deformation distance, and SR is the radius of the substrate being transferred): R^2=(R-DED)^2+SR^2 (Equation 1)

[0052]

[0062] In one or more embodiments, the deformation distance DED is about 1 mm and the radius SR is about 150 mm. The deformation distance DED may be the maximum deformation of the substrate and may be the distance between the vertical position of the outer edge of the substrate and the vertical position of the center of the substrate, as shown in FIG.

[0053]

[0063] Gravity may be used to guide the substrate 102 along one or more pocket surfaces 805 and / or arcuate concave surface 804 to position and / or center the substrate 102 relative to the transfer body 802 .

[0054]

[0064] FIG. 10 is a schematic cross-sectional side view of a transfer device 1000, according to one embodiment.

[0055]

[0065] Transfer device 1000 may be used, at least in part, in place of transfer device 800 shown in Figures 8 and 9. Transfer device 1000 is similar to transfer device 800 shown in Figures 8 and 9 and includes one or more aspects, features, components, processes, and / or properties of transfer device 800.

[0056]

[0066] The transfer body 1002 includes one or more pocket surfaces 1005 and one or more second pocket surfaces 1006 between the one or more pocket surfaces 1005 and the one or more outer surfaces 803. The one or more pocket surfaces 1005 and the one or more second pocket surfaces 1006 may be tapered or arcuate.

[0057]

[0067] One or more pocket surfaces 1005 may have a taper angle that is equal to or greater than the taper angle A1 described above. One or more second pocket surfaces 1006 may have a taper angle that is equal to or greater than the taper angle A1 described above. One or more second pocket surfaces 1006 may have a taper angle that is less than the taper angle of one or more pocket surfaces 1005.

[0058]

[0068] FIG. 11 is a schematic block diagram of a substrate processing method 1100 for semiconductor manufacturing, according to one embodiment.

[0059]

[0069] Step 1102 includes moving a transfer device to the processing space to move the substrate into the processing space of the processing chamber, the transfer device being a transfer device as described herein.

[0060]

[0070] Step 1104 includes placing the substrate on a barrier that is supported on a support body.

[0061]

[0071] Step 1106 includes heating the substrate positioned within the processing space of the processing chamber while the substrate is positioned on the barrier.

[0062]

[0072] Step 1108 flows one or more process gases over the substrate while the substrate is positioned on the barrier to form one or more layers on the substrate.

[0063]

[0073] Advantages of the present disclosure include accounting for substrate deformation, modularity in process parameters (e.g., processing temperature), stable support of the substrate during substrate deformation (e.g., during processing), more consistent contact areas between the substrate and other components, reduction or elimination of substrate misalignment, reduction or elimination of substrate defects, improved throughput, improved device performance, improved thermal uniformity, improved thermal and deposition tunability, and improved deposition uniformity (e.g., center-to-edge uniformity).

[0064]

[0074] It is contemplated that one or more aspects disclosed herein may be combined. By way of example, one or more aspects, features, components, processes, and / or characteristics of various embodiments of processing chamber 100, controller 120, substrate support 106, support body 210, barrier 230, substrate support 706, the barriers shown in FIG. 7, transfer apparatus 800, transfer apparatus 1000, and / or method 1100 may be combined. Furthermore, it is contemplated that one or more aspects disclosed herein may include some or all of the advantages discussed above.

[0065]

[0075] While the above description is directed to embodiments of the present disclosure, other and additional embodiments of the disclosure may be devised without departing from the basic scope thereof, the scope of which is determined by the claims that follow.

Claims

1. 1. A substrate support usable in a semiconductor manufacturing process, the substrate support comprising: A support body, outer surface, a concave surface that is recessed relative to the outer surface; a pocket surface between the outer surface and the concave surface, the pocket surface at least partially defining, together with the concave surface, a pocket in the support body; and a plurality of supports projecting relative to the concave surface; a support body including: a barrier in contact with the plurality of supports, the barrier comprising a plurality of barrier supports; a substrate support comprising:

2. The substrate support of claim 1 , wherein the pocket has a depth of less than 1.0 mm.

3. The substrate support of claim 1 , wherein the pocket surface is tapered and has a taper angle relative to the concave surface, the taper angle being 45 degrees or greater.

4. The substrate support of claim 3 , wherein the pocket surface has a surface roughness of less than 15 microinches.

5. The substrate support of claim 1 , wherein each of the plurality of barrier supports is spherical.

6. 2. The substrate support of claim 1, wherein the barrier further comprises a barrier plate, the plurality of barrier supports protruding relative to a first side of the barrier plate, and each barrier support of the plurality of barrier supports abutting at least two of the plurality of supports.

7. The substrate support of claim 6 , wherein the barrier further comprises a plurality of second barrier supports that protrude relative to a second side of the barrier plate.

8. The substrate support of claim 7 , wherein each of the plurality of supports, each of the plurality of barrier supports, and each of the plurality of second barrier supports are hemispherical.

9. The substrate support of claim 7 , wherein the barrier plate is a ring, and the plurality of second barrier supports are circumferentially offset from the plurality of barrier supports.

10. 2. The substrate support of claim 1, wherein the support body further comprises a plurality of gas openings extending between the pocket surface and a second outer surface of the support body, the second outer surface being opposite the outer surface.

11. The substrate support of claim 1 , wherein the support body and the barrier are each formed of silicon carbide (SiC) or graphite coated with SiC.

12. 2. The substrate support of claim 1, wherein the concave surface has an outer radius, and the plurality of barrier supports are aligned with a radial position that is a ratio of the outer radius, the ratio being in the range of 0.4 to 0.

6.

13. 1. A processing chamber usable in semiconductor manufacturing, comprising: a window at least partially defining a processing volume; a plurality of heat sources configured to heat the processing space; a substrate support disposed within the processing space, the substrate support comprising: A support body, outer surface, a concave surface that is recessed relative to the outer surface; a pocket surface between the outer surface and the concave surface; and a plurality of supports projecting relative to the concave surface; a support body including: a barrier, the barrier contacting the plurality of supports and including a plurality of barrier supports.

14. 14. The substrate support of claim 13, wherein the barrier further comprises a barrier plate, the plurality of barrier supports protruding relative to a first side of the barrier plate, and each barrier support of the plurality of barrier supports abutting at least two of the plurality of supports.

15. 14. The processing chamber of claim 13, wherein the concave surface has an outer radius, and the plurality of barrier supports are aligned with radial positions that are a ratio of the outer radius, the ratio being in the range of 0.4 to 0.

6.

16. 1. A transfer apparatus for moving substrates in connection with semiconductor manufacturing, the transfer apparatus comprising: a transfer body, the transfer body comprising: outer surface, an arcuate concave surface recessed relative to the outer surface; a pocket surface between said outer surface and said arcuate concave surface; A transfer device comprising:

17. 17. The transfer device of claim 16, wherein the arcuate concave surface is hemispherical and has a radius of curvature that is in the range of 10.5 meters to 12.0 meters.

18. 20. The transfer device of claim 17, wherein the transfer body is formed of quartz.

19. 17. The transfer device of claim 16, wherein the transfer body is a blade including a wrist and a plurality of arms.

20. 17. The transfer device of claim 16, wherein the transfer body further includes a second pocket surface between the pocket surface and the outer surface.

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