Infrared bolometer using semiconducting carbon nanotube and method of manufacturing the same

Abstract

To reduce a resistance value of an infrared bolometer using a semiconductor type carbon nanotube.SOLUTION: An infrared bolometer comprising: a substrate; an infrared detection unit; and a support leg that supports the infrared detection unit such that the infrared detection unit is disposed to be spaced apart from one surface of the substrate, the infrared detection unit includes a source electrode and a drain electrode that are provided at an interval, a carbon nanotube film that is present between the two electrodes, at least a part of the carbon nanotube film overlapping the two electrodes and being in electrical contact with the two electrodes, and is a light detection unit, and a gate electrode that is provided above or below the carbon nanotube film via an insulating film, in which a voltage is applied between the source electrode and the drain electrode, and the gate electrode is electrically short-circuited to any one of the source electrode and the drain electrode.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to an infrared bolometer using semiconducting carbon nanotubes and a method for manufacturing the same. [Background technology]

[0002] Infrared sensors have been increasingly used in industry in recent years due to their wide range of applications, including not only security surveillance cameras but also human body thermography, in-vehicle cameras, and inspection of structures, food, etc. In particular, there is a growing expectation for the development of inexpensive, high-performance infrared sensors that can acquire biometric information in conjunction with IoT (Internet of Things).

[0003] Bolometers, a type of uncooled infrared detector, have a variety of applications as inexpensive infrared sensors. For example, Patent Document 1 describes an infrared sensor that includes a base substrate, a temperature detection unit that absorbs infrared rays and detects temperature changes, and a heat insulating unit that supports the temperature detection unit so that the temperature detection unit is spaced apart from one surface of the base substrate and thermally insulates the temperature detection unit from the base substrate. In this infrared sensor, when irradiated with infrared rays, the temperature detection unit heats up and detects a change in resistance due to the temperature change. In such an infrared sensor, vanadium oxide is used as the temperature detection unit. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2007-263769 Summary of the Invention [Problem to be solved by the invention]

[0005] However, the vanadium oxide used in the bolometer film has a problem in that its performance is limited by its low temperature coefficient of resistance (TCR). To improve performance, it is necessary to use a material with a higher TCR for the bolometer film, and it is expected that a random network of semiconducting carbon nanotubes (CNTs), a material with a high TCR, will be used as the bolometer film.

[0006] On the other hand, semiconducting CNTs have a high TCR but a high resistance, so infrared sensors that use them in the bolometer section have the problem of a low signal-to-noise ratio (S / N). Therefore, in order to put infrared sensors using carbon nanotubes (uncooled CNT infrared sensors) into practical use, it is necessary to not only improve the TCR but also reduce the resistance.

[0007] In view of the above-mentioned problems, an object of the present disclosure is to reduce the resistance value of an infrared bolometer using semiconducting carbon nanotubes. [Means for solving the problem]

[0008] To achieve the above object, the infrared bolometer of the present disclosure comprises: A substrate; An infrared detection unit; a support leg that supports the infrared detection unit so that the infrared detection unit is disposed at a distance from one surface of the substrate; An infrared bolometer comprising: The infrared detection unit spaced apart source and drain electrodes; a carbon nanotube film as a light detection unit that is present between the two electrodes and that at least partially overlaps and is in electrical contact with the two electrodes; and a gate electrode provided above or below the carbon nanotube film via an insulating film; and The infrared bolometer has a voltage applied between the source electrode and the drain electrode, and the gate electrode is electrically short-circuited to either the source electrode or the drain electrode.

[0009] The method for manufacturing an infrared bolometer according to the present disclosure further comprises the steps of: 1. A method for manufacturing an infrared bolometer having an infrared detection unit supported on a substrate by support legs so as to be spaced apart from the substrate, comprising: The step of manufacturing the infrared detection unit includes: a step (ta) of forming a first insulating film; A step (tb) of forming the carbon nanotube film into a predetermined shape; a step (tc) of forming a source electrode and a drain electrode spaced apart from each other and electrically contacting at least a portion of the carbon nanotube film; a step (td) of forming a second insulating film on the carbon nanotube film, the source electrode, and the drain electrode; forming a gate electrode on the second insulating film, the gate electrode overlapping at least a portion of the carbon nanotube film via the second insulating film and electrically connected to the drain electrode; The present invention relates to a method for manufacturing an infrared bolometer, comprising:

[0010] Alternatively, the method for manufacturing an infrared bolometer of the present disclosure includes the steps of: 1. A method for manufacturing an infrared bolometer having an infrared detection unit supported on a substrate by support legs so as to be spaced apart from the substrate, comprising: The step of manufacturing the infrared detection unit includes: A step (ba) of forming a first insulating film; a step (bb) of forming a gate electrode of a predetermined shape; A step (bc) of forming a second insulating film; (b) forming the carbon nanotube film into a predetermined shape; and forming a source electrode and a drain electrode spaced apart from each other and electrically contacting at least a portion of the carbon nanotube film, and connecting the drain electrode to the gate electrode; The present invention relates to a method for manufacturing an infrared bolometer, comprising: [Effects of the Invention]

[0011] According to the present disclosure, it is possible to provide an infrared bolometer with a low resistance value and a method for manufacturing the same. [Brief explanation of the drawings]

[0012] [Figure 1] FIG. 1 is a perspective view of a bolometer array of the present disclosure. [Figure 2] FIG. 2 is a perspective view of a single bolometer element according to the present disclosure. [Figure 3] FIG. 3 is a top view of an example of a top-gate infrared bolometer according to the present disclosure. [Figure 4] FIG. 4 is a top transmission view of an example of a top-gate type infrared bolometer of the present disclosure. [Figure 5] FIG. 5 is a cross-sectional view of an example of a top-gate infrared bolometer according to the present disclosure. [Figure 6] FIG. 6 is a top transmission view and a cross-sectional view of an example of a top-gate type infrared bolometer according to the present disclosure. [Figure 7] FIG. 7 is a top transmission view and a cross-sectional view of an example of a top-gate type infrared bolometer according to the present disclosure. [Figure 8] FIG. 8 is a top transmission view and a cross-sectional view of an example of a top-gate type infrared bolometer according to the present disclosure. [Figure 9] FIG. 9 is a top view and a cross-sectional view of an example of a back-gate type infrared bolometer according to the present disclosure. [Figure 10] FIG. 10 is a top transmission view and a cross-sectional view of an example of a back-gate type infrared bolometer according to the present disclosure. [Figure 11] FIG. 11 is a top view and a cross-sectional view of an example of a back-gate type infrared bolometer according to the present disclosure. [Figure 12] FIG. 12 is a top view and a cross-sectional view of an example of a back-gate type infrared bolometer according to the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0013] Below, embodiments for carrying out the present disclosure will be described, but the present disclosure is not limited to the following embodiments. In the following examples, identical or equivalent parts will be described by using the same reference numerals. Furthermore, a bolometer (infrared detector) that detects infrared light will be described as an example, but the bolometer of the present disclosure can also be used to detect other than infrared light, for example, terahertz waves, as will be described later. Therefore, in this specification, the terms "infrared" and "infrared light" can be appropriately interpreted as the desired electromagnetic wave to be detected.

[0014] <Infrared bolometer> The infrared bolometer of the present disclosure comprises: A substrate; An infrared detection unit; a support leg that supports the infrared detection unit so that the infrared detection unit is disposed at a distance from one surface of the substrate; An infrared bolometer comprising: The infrared detection unit spaced apart source and drain electrodes; a carbon nanotube film as a light detection unit that is present between the two electrodes and that at least partially overlaps and is in electrical contact with the two electrodes; and a gate electrode provided above or below the carbon nanotube film via an insulating film; and The infrared bolometer has a voltage applied between the source electrode and the drain electrode, and the gate electrode is electrically short-circuited to either the source electrode or the drain electrode.

[0015] In the infrared bolometer of the present invention, a gate electrode is placed above or below the carbon nanotube film, which is the photodetector, via an insulating film, and by applying a gate voltage to the carbon nanotube film, the current flowing through the carbon nanotube film is increased, thereby reducing the resistance value of the infrared bolometer.

[0016] In the present disclosure, "above or below the carbon nanotube film" includes above or below the carbon nanotube film present between the source electrode and the drain electrode, as well as above or below the portion where the source electrode or the drain electrode overlaps with the carbon nanotube film. Here, "above the portion where the source electrode or the drain electrode overlaps with the carbon nanotube film" means "above the source electrode or the drain electrode provided on the carbon nanotube film" or "above the carbon nanotube film provided on the source electrode or the drain electrode," and "below the portion where the source electrode or the drain electrode overlaps with the carbon nanotube film" means "below the carbon nanotube film provided below the source electrode or the drain electrode" or "below the source electrode or the drain electrode provided below the carbon nanotube film."

[0017] There are two types of carbon nanotubes: semiconducting and metallic. In the present disclosure, the carbon nanotube film generally contains at least 67 mass% semiconducting carbon nanotubes of the total amount of carbon nanotubes, and the film as a whole exhibits semiconducting properties. The semiconducting type may be either p-type or n-type, but because p-type semiconducting carbon nanotubes are easier to manufacture than n-type semiconducting carbon nanotubes, the following description will focus on p-type. In the following description, it is assumed that the carbon nanotube film is a p-type semiconductor, but the same configuration can be achieved in the case of an n-type semiconductor.

[0018] In this description, of a pair of electrodes in contact with the carbon nanotube film at a distance, the electrode that applies ground potential (0 V; reference potential) is referred to as the drain electrode, and the other electrode is referred to as the source electrode. The infrared bolometer of the present disclosure functions as a bolometer by detecting the temperature change of the current between the source electrode and the drain electrode (i.e., the temperature change of the resistance of the carbon nanotube film).

[0019] The bolometer of the present disclosure will be described below with reference to the drawings. The drawings are intended to make the structure of the infrared bolometer of the present disclosure easier to understand, and may not necessarily be drawn to scale.

[0020] FIG. 1 is a perspective view of a bolometer array, and FIG. 2 is a perspective view of a single bolometer element. The bolometer of the present disclosure has a basic structure called a MEMS type, in which the infrared detection unit 13 is supported by support legs 15 (a, b) so as to be spaced apart from the substrate 12. This structure can typically be fabricated using a silicon MEMS (Micro Electro Mechanical Systems) process. For example, after forming layers such as an interlayer insulating film on the semiconductor substrate 12, a sacrificial layer is formed, and the support legs and diaphragm unit (which constitute the bottom surface of the infrared detection unit) are formed using an insulating film such as a silicon nitride film. Then, necessary structures such as metal wiring, source and drain electrodes, etc. are fabricated, and the sacrificial layer is then etched away, thereby fabricating a structure in which the infrared detection unit 13 is spaced apart from the substrate 12. In the present disclosure, the carbon nanotube film, source electrodes, drain electrodes, and gate electrodes can be formed at an appropriate time before or after the sacrificial layer is etched away.

[0021] In describing the bolometer of the present disclosure, symbols A to L are used to indicate positions. In Fig. 2, support leg 15a contacts substrate 12 at position A, and at position B it is on or at the same location as the diaphragm portion away from substrate 12, with support leg 15a moving away from substrate 12 between position A and position B. The other support leg 15b contacts substrate 12 at position L, and moves away from substrate 12 between position L and position K. The diaphragm portion including infrared detection unit 13 is supported by the two support legs 15a and 15b.

[0022] Note that FIG. 2 is one example of the structure of the bolometer of the present disclosure, and it is necessary that the infrared detection unit 13 is configured to be separated from the substrate 12, and the structure, number, etc. of the support legs 15 are not particularly limited.

[0023] Below, we will explain infrared bolometers by dividing them into top-gate types, which have a structure in which the gate electrode is provided above the carbon nanotube film (i.e., on the opposite side from the substrate described below) via an insulating film, and back-gate types, which have a structure in which the gate electrode is provided below the carbon nanotube film (i.e., on the substrate side) via an insulating film.

[0024] [1] Top-gate type (infrared bolometer with a gate electrode placed on top of the carbon nanotube film via an insulating film)

[0025] In the top-gate infrared bolometer of the present disclosure, a gate electrode is formed on the carbon nanotube film via an insulating film. The gate electrode in the top-gate infrared bolometer is preferably positioned so as not to block as much light as possible entering the carbon nanotube film.

[0026] As an example of a top-gate infrared bolometer, a top view of an infrared bolometer in which gate electrodes 34 are arranged in an L-shape of D-G-I is shown in FIG. 3. A top view of the infrared bolometer is shown in FIG. 4(A), and a top view of the structure excluding the gate is shown in FIG. 4(B). Furthermore, a cross-sectional view of the infrared bolometer along the symbols at each position is shown in FIG. 5. The cross-sectional view shown here is not a cross-section cut along a straight line, but a cross-section cut along a curved line connecting the symbol positions with a straight line. The scale may not necessarily be correct.

[0027] 3, the infrared bolometer 10 of the present disclosure is formed on a substrate 12, and the uppermost surface is covered with an insulating film 18. However, layers such as a protective layer and an infrared absorbing layer may be further formed on the upper surface of the insulating film 18. The structure of the lower part (substrate side) of the insulating film 18 will be explained with reference to FIGS. 4 and 5.

[0028] As shown in FIG. 5A, wiring 16 is connected to the source electrode 24 and the drain electrode 25 through the support leg 15 (not shown). The source electrode 24 and the drain electrode 25 are disposed opposite each other with a gap therebetween. As shown in FIG. 5B, a carbon nanotube film 22 is formed so as to at least partially overlap the top of the source electrode 24 and the drain electrode 25 (the side opposite the substrate). The carbon nanotube film 22 is located on the side opposite the substrate from the source electrode 24 and the drain electrode 25. As shown in FIG. 4A, a gate electrode 34 is disposed on the carbon nanotube film 22 via an insulating film 18 in an L-shape, indicated by D-G-I. Portions D-G of the gate electrode 34 are located above the carbon nanotube film between the source and drain electrodes, but only partially cover the carbon nanotube film. This is to minimize the obstruction of light incident on the carbon nanotube film. Portions G-H-I of the gate electrode 34 are disposed in positions overlapping the source electrode 24.

[0029] 3 to 5 includes a substrate 12, an infrared detection unit 13, and support legs 15. The support legs 15 support the infrared detection unit 13 so that the infrared detection unit 13 is spaced apart from one surface of the substrate 12. The infrared detection unit 13 includes a source electrode 24 and a drain electrode 25 spaced apart from each other, a carbon nanotube film 22 serving as a photodetector located between the two electrodes and at least partially overlapping and electrically contacting the two electrodes, and a gate electrode 34 disposed on the carbon nanotube film 22 via an insulating film 18 in an L-shape, indicated by D, G, and I. A voltage is applied between the source electrode 24 and the drain electrode 25, and the gate electrode 34 is electrically short-circuited with the drain electrode 25 at position D. Shorting the gate electrode 34 to either the source electrode 24 or the drain electrode 25 facilitates integration as a detector, which is preferable. The source electrode 24 and the drain electrode 25 may be arranged in an inverted manner.

[0030] 3 to 5, carbon nanotube film 22 is electrically connected to source electrode 24 and drain electrode 25 provided at a distance from each other. Source electrode 24 and drain electrode 25 may be formed by depositing an electrode material so as to connect to wiring 16 (referred to as a "contact electrode type"), or may be a portion of wiring 16 that is in contact with carbon nanotube film 22 (referred to as a "direct contact type").

[0031] In a top-gate infrared bolometer, the gate electrode is located "above the carbon nanotube film." In this embodiment, the gate electrode is located in a portion (D-G) of the upper region between the source and drain electrodes (the portion of the square region D-F-I-G that does not overlap with the source and drain electrodes) (see FIGS. 4 and 5). Furthermore, a portion of the gate electrode 34 is located above the source electrode 24 (or alternatively, the drain electrode 25) (G-H-I), away from the region between the source and drain electrodes. However, the gate electrode 34 is located above the carbon nanotube film 22 via an insulating film (top gate), and the source electrode 24 (or the drain electrode 25) is in contact with the carbon nanotube film below the carbon nanotube film 22 (the opposite side of the gate electrode). Alternatively, the gate electrode may be located only in a portion (e.g., D-G) of the upper region between the source and drain electrodes (the portion of the square region D-F-I-G that does not overlap with the source and drain electrodes).

[0032] In a bolometer having such a structure, when a specific potential is applied to the gate electrode while a voltage is applied between the source and drain, carriers are induced in the carbon nanotube film, which is thought to result in an increase in the current between the source and drain. Also, in the case where the gate electrode 34 is located above the source electrode 24 (or drain electrode 25) (see FIG. 5(B)), as in this embodiment, when a specific potential is applied to the gate electrode, the Schottky barrier between the source electrode 24 (or drain electrode 25) and the carbon nanotube film 22 changes, which is thought to increase the current between the source and drain.

[0033] The voltage applied to the gate electrode 34 can be different from that of the source electrode 24 and the drain electrode 25. However, since this would result in extremely complicated wiring, it is preferable to short-circuit the gate electrode 34 to either the source electrode 24 or the drain electrode 25, as in this embodiment. This facilitates integration as a detector. Note that, when a portion of the gate electrode 34 is located above the source electrode 24, as in this embodiment, it is preferable to apply a different potential to the gate electrode 34 than to the source electrode 24. Therefore, when the gate electrode 34 is short-circuited, it is preferable to short-circuit it with the drain electrode 25. Conversely, when the gate electrode 34 is located below the drain electrode 25, it is preferable to short-circuit the gate electrode 34 with the source electrode 24.

[0034] Each component of the infrared bolometer of the present disclosure will now be described.

[0035] (carbon nanotube film) The carbon nanotube film is a thin film made up of a plurality of carbon nanotubes, preferably having a network structure, and functions as a bolometer film.

[0036] The thickness of the carbon nanotube film is not particularly limited, but is, for example, 1 nm or more, for example, in the range of several nm to 100 μm, preferably 10 nm to 10 μm, and more preferably 50 nm to 1 μm. In one embodiment, the thickness is preferably 20 nm to 500 nm, more preferably 50 nm to 200 nm. A carbon nanotube film thickness of 1 nm or more can achieve good light absorption. Furthermore, a carbon nanotube film thickness of 1 μm or less, preferably 500 nm or less, is preferred from the viewpoint of simplifying the manufacturing method. Furthermore, if the carbon nanotube film is too thick, the contact electrode deposited from above may not make sufficient contact with the carbon nanotubes below the carbon nanotube film, resulting in a high effective resistance. However, if the thickness is within the above range, the increase in resistance can be suppressed. Furthermore, a carbon nanotube film thickness within the above range of 10 nm to 1 μm is also preferred because it allows for suitable application of printing techniques as a manufacturing method for the carbon nanotube film. The thickness of the carbon nanotube film can be calculated as the average thickness measured at any 10 points on the carbon nanotube film.

[0037] The density of the carbon nanotube film is not particularly limited, but is, for example, 0.3 g / cm 3 ~1.4g / cm 3 , preferably 0.8 g / cm 3 ~1.3g / cm 3 , more preferably 1.1 g / cm 3 ~1.2g / cm 3 The density of the carbon nanotube film is 0.3 g / cm 3 When the density of the carbon nanotube film is 0.5 g / cm or more, a good light absorption rate can be obtained. 3 The carbon nanotube film density can be calculated from the weight, area, and thickness of the carbon nanotube film.

[0038] In addition to the above-mentioned components, the carbon nanotube film may contain, as appropriate, negative thermal expansion materials, ionic conductive agents (surfactants, ammonium salts, inorganic salts), resins, organic binders, etc., as described below.

[0039] The carbon nanotube content in the carbon nanotube film can be selected as appropriate, but preferably, 0.1 mass% or more is effective based on the total mass of the carbon nanotube film, and more preferably, 1 mass% or more is effective. For example, 30 mass% or even 50 mass% or more is preferable, and in some cases, 60 mass% or more may be preferable.

[0040] Carbon nanotubes can form structures such as parallel wires, fibers, and networks, but preferably form a three-dimensional network structure that is less likely to aggregate and provides uniform conductive paths.

[0041] The carbon nanotubes may be single-walled, double-walled, or multi-walled, but are preferably single-walled or several-walled (e.g., two-walled or three-walled) carbon nanotubes, and more preferably single-walled carbon nanotubes. The carbon nanotubes preferably contain 80% by mass or more, more preferably 90% by mass or more (including 100% by mass) of single-walled carbon nanotubes.

[0042] The carbon nanotube film preferably uses semiconducting carbon nanotubes with a large band gap and carrier mobility. The content of semiconducting carbon nanotubes, preferably semiconducting single-walled carbon nanotubes, in the carbon nanotubes is generally 67% by mass or more, preferably 70% by mass or more, more preferably 80% by mass or more, particularly preferably 90% by mass or more, more preferably 95% by mass or more, and even more preferably 99% by mass or more (including 100% by mass).

[0043] The diameter of the carbon nanotube is not particularly limited, but from the viewpoint of increasing the band gap and improving the TCR, it is preferably between 0.6 and 1.5 nm, more preferably between 0.6 and 1.2 nm, and even more preferably between 0.7 and 1.1 nm. In one embodiment, a diameter of 1 nm or less may be particularly preferable. If the diameter is 0.6 nm or more, the production of carbon nanotubes is easier. If the diameter is 1.5 nm or less, the band gap can be easily maintained within an appropriate range, and a high TCR can be obtained.

[0044] In this specification, the diameter of carbon nanotubes means that the diameters of carbon nanotubes on a thermal insulating layer or in a deposited thin film are measured using an atomic force microscope (AFM) at approximately 100 locations, and 60% or more, preferably 70% or more, in some cases more preferably 80% or more, and more preferably 100% of the measured diameters are within the range of 0.6 to 1.5 nm. Preferably, 60% or more, preferably 70% or more, in some cases more preferably 80% or more, and more preferably 100% of the measured diameters are within the range of 0.6 to 1.2 nm, and even more preferably 0.7 to 1.1 nm. In one embodiment, 60% or more, preferably 70% or more, in some cases more preferably 80% or more, and more preferably 100% of the measured diameters are within the range of 0.6 to 1 nm.

[0045] The length of the carbon nanotubes is not particularly limited, but is preferably between 100 nm and 5 μm, as this facilitates dispersion and provides excellent coating properties. From the viewpoint of the electrical conductivity of the carbon nanotubes, a length of 100 nm or more is also preferred. A length of 5 μm or less makes it easier to suppress aggregation on the heat insulating layer and / or during film formation. The length of the carbon nanotubes is more preferably between 500 nm and 3 μm, and even more preferably between 700 nm and 1.5 μm.

[0046] In this specification, the length of carbon nanotubes means that the length distribution of carbon nanotubes is measured by observing and counting at least 100 nanotubes using an atomic force microscope (AFM), and that 60% or more, preferably 70% or more, in some cases more preferably 80% or more, and more preferably 100% of the nanotubes are in the range of 100 nm to 5 μm. Preferably, 60% or more, preferably 70% or more, in some cases more preferably 80% or more, and more preferably 100% of the nanotubes are in the range of 500 nm to 3 μm. More preferably, 60% or more, preferably 70% or more, in some cases more preferably 80% or more, and more preferably 100% of the nanotubes are in the range of 700 nm to 1.5 μm.

[0047] When the diameter and length of the carbon nanotube are within the above ranges, the influence of the semiconducting properties is increased and a large current value can be obtained, so that when used as a bolometer film, a high TCR value is likely to be obtained.

[0048] The carbon nanotubes may be heat-treated in an inert atmosphere or in a vacuum to remove surface functional groups, impurities such as amorphous carbon, catalysts, etc. The heat treatment temperature can be appropriately selected, but is preferably 800 to 2000°C, more preferably 800 to 1200°C.

[0049] (substrate) The material constituting the substrate may be inorganic or organic, and any material commonly used in the art can be used without particular limitation. Inorganic materials include, but are not limited to, glass, Si, SiO2, SiN, etc. Organic materials include, but are not limited to, plastics, rubber, etc., such as polyimide, polyethylene, polypropylene, polystyrene, polyvinyl chloride, polyethylene terephthalate, acrylonitrile styrene resin, acrylonitrile butadiene styrene resin, fluororesin, methacrylic resin, polycarbonate, etc.

[0050] The substrate is preferably coated with a resin film. The resin film is made of a resin with high thermal insulation properties (low thermal conductivity). Covering the substrate surface with a resin with high thermal insulation properties can suppress heat dissipation from the carbon nanotube film. The thermal conductivity of the resin constituting the resin film is generally 0.3 W / mK or less, preferably 0.15 W / mK or less, and in some cases more preferably 0.1 W / mK or less. Since a lower thermal conductivity is preferable, the lower limit is not particularly limited, but is, for example, 0.02 W / mK or more, e.g., 0.05 W / mK or more. In particular, it is preferable that the thermal conductivity of the resin film at least in the vertical direction (stacking direction) is within the above range. In this specification, the thermal conductivity can be a value determined at 25°C according to a standard method (ASTM C177, ASTM E1461, etc.).

[0051] The resin used for the resin film is not particularly limited, but parylene is one example. Parylene is a general term for paraxylylene-based polymers, and has a structure in which benzene rings are linked via CH2. Examples of parylene include those formed from a dimer represented by the following formula:

[0052] [ka]

[0053] In the above formula, at least one hydrogen atom in at least one benzene ring may be substituted with a halogen atom. Examples of halogen include fluorine (F), chlorine (Cl), bromine (Br), and iodine (I), with chlorine being preferred. The number of halogen atoms substituted is 8 or less, preferably 6 or less, and more preferably 4 or less.

[0054] Parylenes include Parylene N, Parylene C, Parylene D, Parylene HT, and Parylene Free. Among them, Parylene C (thermal conductivity: 0.084 (W / mK)) is the most suitable due to its lowest thermal conductivity. Parylene is chemically stable and has excellent moisture, chemical, and insulation barrier properties. Parylene coatings also have excellent temperature stability, mechanical properties, and tensile strength.

[0055] The method for forming the resin film is not particularly limited and can be selected appropriately depending on the resin used. For example, when parylene is used, a parylene film can be formed by coating parylene on a substrate using a vacuum deposition apparatus. Specifically, when a solid dimer is heated under vacuum, it vaporizes into a dimer gas. This gas then thermally decomposes, cleaving the dimer and converting it into a monomer form. In a deposition chamber at room temperature, this monomer gas polymerizes on all surfaces, forming a thin, transparent polymer film. If necessary, the substrate may be pretreated, cleaned, or areas where deposition is not to be performed may be masked before the deposition process.

[0056] (gate electrode) For the gate electrode, for example, a single metal such as titanium, gold, platinum, aluminum, copper, silver, tungsten, or cobalt, or an alloy containing at least one of these, can be used alone or in combination. Taking into consideration the adhesive and bonding properties with the insulating film, source electrode, and gate electrode described below, a combination of two or more metals may be used, such as by laminating gold on titanium. The gate electrode material may be the same as or different from the source electrode, drain electrode, and wiring described below. The gate electrode can be formed by vapor deposition or printing after patterning with a metal mask, etc., as necessary.

[0057] (Source electrode, drain electrode, wiring) The source electrode, drain electrode, and wiring may be appropriately selected taking into consideration adhesiveness and the characteristics of the bond formed with the carbon nanotube film. For example, single metals such as titanium, gold, platinum, aluminum, copper, silver, tungsten, and cobalt, or alloys containing at least one of these, can be used alone or in combination. The source electrode and drain electrode may be made of the same material as the wiring, or a different material. The height of the source electrode and drain electrode can be adjusted as appropriate, but is preferably 10 nm to 1 mm, more preferably 50 nm to 1 μm, and particularly preferably 50 nm to 200 nm. The distance between the source electrode and drain electrode is preferably 1 μm to 500 μm, and more preferably 5 to 200 μm for miniaturization. The method for forming the source electrode and drain electrode is not particularly limited, but they can be formed by, for example, vapor deposition, sputtering, or printing. If necessary, masking or other procedures may be performed in advance to remove areas where the source electrode and drain electrode should not be formed.

[0058] (insulating film) The material of the insulating film is not particularly limited, but examples thereof include silicon oxide (SiO2), silicon nitride (SiN), etc. The method of forming the insulating film is not particularly limited, and can be appropriately selected depending on the material used. Since the insulating film serves as a gate insulating film, it can have a thickness equivalent to that of a gate insulating film in a metal oxide semiconductor field effect transistor (MOSFET), for example, preferably 1 nm to 1 μm, more preferably 5 nm to 200 nm.

[0059] (Infrared reflector) The infrared bolometer of the present disclosure preferably optionally has an infrared reflector (not shown) on the substrate. The infrared reflector is a layer that reflects light that has not been absorbed by the carbon nanotube film but has been transmitted therethrough and is then reabsorbed by the carbon nanotube film. The infrared reflector is preferably positioned so that the distance between the carbon nanotube film and the infrared reflector is d=λ / 4, taking into account the wavelength λ of the light to be absorbed. The infrared reflector is preferably positioned directly above the carbon nanotube film. The infrared reflector can be made of any material that is used as a light-reflecting layer in a bolometer, and typically includes metals such as titanium, gold, silver, and aluminum. The infrared reflector can be formed by vapor deposition, sputtering, plating, or the like. The thickness of the infrared reflector is not particularly limited, but is preferably 0.1 to 5 μm, and more preferably 0.5 to 1 μm.

[0060] (Protective film (or light-absorbing film and protective film)) The infrared detection unit of the infrared bolometer of the present disclosure may optionally have a protective film (not shown) on top. The protective film may be made of any material that is used as a protective film in a bolometer, such as silicon nitride (SiN), silicon oxide (SiO), resin, such as acrylic resins like parylene, PMMA, and PMMA-anisole, epoxy resin, or Teflon (registered trademark).

[0061] It is also preferable to use a material that functions as both a light absorbing film and a protective film for the protective film. Such materials are preferably silicon nitride (SiN) and silicon oxide (SiO2). The light absorbing film has the effect of improving the absorption rate of electromagnetic waves. The thickness of the light absorbing film can be set appropriately depending on the material, but can be, for example, 50 nm to 1 μm.

[0062] (Another example of a top gate type) FIG. 6 shows the structure of another example of a top-gate infrared bolometer, in which gate electrodes 34 are arranged in a U-shape at positions D through G through I through F. This is the infrared bolometer shown in FIGS. 3 through 5, with gate electrodes 34 further extended from I through F. (A) is a top-view transmission diagram of the bolometer, and (B) is a cross-sectional diagram along each symbol in the infrared detection section. In this embodiment, gate electrode 34 is short-circuited with drain electrode 25 at positions D and F. Compared to the embodiment shown in FIGS. 3 through 5, in the embodiment shown in FIG. 6, carriers can be induced in the carbon nanotube film even below the gate electrode at positions I through F, thereby further increasing the source-drain current. Meanwhile, the amount of incident infrared light is reduced.

[0063] FIG. 7 shows the structure of another example of a top-gate infrared bolometer, in which gate electrodes 34 are arranged in a grid pattern. (A) is a top view of the bolometer, and (B) is a cross-sectional view of the infrared detection section along the respective symbols. In this embodiment, the gate electrode 34 is short-circuited with the drain electrode 25 at positions D and F. In the embodiment shown in FIG. 7, the area of ​​the gate electrode located above the source electrode and drain electrode is further increased, allowing carriers to be induced in the carbon nanotube film over a wider area, further increasing the source-drain current while further reducing the amount of incident infrared light. The area and shape of the gate electrode located above the source electrode and drain electrode are preferably set to balance the carrier induction effect in the carbon nanotube film and the amount of incident infrared light.

[0064] FIG. 8 shows the structure of another example of a top-gate infrared bolometer, in which gate electrodes 34 are arranged in an L-shape at points D-G-I, similar to the infrared bolometers of FIGS. 3-5, but the drain electrode is not connected to the wiring at part D. In this example, gate electrode 34 is short-circuited with drain electrode 25 at position F. That is, while the three examples of infrared bolometers shown in FIGS. 3-5, 6, and 7 were electrically connected in the order of wiring → drain electrode → gate electrode, in the embodiment of FIG. 8, the electrical connections are made in the order of wiring → gate electrode → drain electrode.

[0065] The shape and electrical connection of the gate electrode in the top-gate type infrared bolometer can be changed in various ways and are not limited to the above.

[0066] [2] Back-gate type (an infrared bolometer with a gate electrode placed under the carbon nanotube film via an insulating film)

[0067] In the back-gate type infrared bolometer of the present disclosure, the gate electrode is formed below (on the substrate side of) the carbon nanotube film via an insulating film.

[0068] As an example of a back-gate type infrared bolometer, FIG. 9 shows a top view (A) of an infrared bolometer in which gate electrodes 34 are arranged in L shapes of D to G to I, and a cross-sectional view (B) along each symbol.

[0069] The infrared bolometer 10 of this embodiment is formed on a substrate 12, and its uppermost surface is covered with an insulating film 18 (not shown). However, layers such as a protective layer and an infrared absorbing layer may be further formed on the upper surface of the insulating film. The structure of the lower part (substrate side) of the insulating film 18 will be explained with reference to FIG. 9.

[0070] As shown in FIG. 9(A), wiring 16 is connected to source electrode 24 and drain electrode 25 through support leg 15 (not shown). The source electrode 24 and drain electrode 25 are provided facing each other with a gap therebetween. As shown in FIG. 9(B), carbon nanotube film 22 is formed so that at least a portion thereof overlaps the lower portions (substrate side) of source electrode 24 and drain electrode 25. The carbon nanotube film 22 is located on the substrate side of the source electrode 24 and drain electrode 25. As shown in FIG. 9(A), gate electrode 34 is provided in an L-shape with portions D to I below carbon nanotube film 22 via insulating film 18. Portions D to G of gate electrode 34 are located below the carbon nanotube film between the source and drain. Portions G to I of gate electrode 34 are located so as to overlap source electrode 24.

[0071] As shown in FIG. 9, the bolometer 10 includes a substrate 12, an infrared detector 13, and support legs 15. The support legs 15 support the infrared detector so that the infrared detector is spaced apart from one surface of the substrate. The infrared detector 13 includes a source electrode 24 and a drain electrode 25 spaced apart from each other, a carbon nanotube film 22 serving as a photodetector located between the two electrodes and at least partially overlapping and electrically contacting the two electrodes, and a gate electrode 34 disposed in an L-shape, indicated by D, G, and I, below the carbon nanotube film 22 via an insulating film 18. A voltage is applied between the source electrode 24 and the drain electrode 25, and the gate electrode 34 is electrically short-circuited with the drain electrode 25 at position D. Shorting the gate electrode 34 to either the source electrode 24 or the drain electrode 25 facilitates integration as a detector, which is preferable. The source electrode 24 and the drain electrode 25 may be reversed in position. In this embodiment, (1) the gate electrode, (2) the carbon nanotube film, and (3) the source electrode and drain electrode are formed in this order from the substrate side, and therefore the connection between the gate electrode 24 and the drain electrode 25 is made through a through hole provided in the insulating film 18, as shown at position D in Figure 9(B).

[0072] The source electrode 24 and the drain electrode 25 may be formed by depositing an electrode material so as to connect to the wiring 16 (referred to as a "contact electrode type"), or may be the part of the wiring 16 that is in contact with the carbon nanotube film 22 (referred to as a "direct contact type").

[0073] In the back-gate type of this embodiment, the gate electrode is located "below the carbon nanotube film." In FIG. 9, the gate electrode is located in a portion (D-G) of the lower region between the source electrode and the drain electrode (the portion of the square region D-F-I-G that does not overlap with the source electrode and the drain electrode), and a portion of the gate electrode 34 is located below the source electrode 24 (or the drain electrode 25) outside the region between the source electrode and the drain electrode (G-H-I). However, the gate electrode 34 is located below the carbon nanotube film 22 via an insulating film (back gate), and the source electrode 24 (or the drain electrode 25) is in contact with the carbon nanotube film above the carbon nanotube film 22 (the side opposite the gate electrode). Alternatively, the gate electrode may be located only in a portion (e.g., D-G) of the upper region between the source electrode and the drain electrode (the portion of the square region D-F-I-G that does not overlap with the source electrode and the drain electrode).

[0074] In a bolometer having such a structure, when a specific potential is applied to the gate electrode while a voltage is applied between the source and drain, carriers are induced in the carbon nanotube film, which is thought to result in an increase in the current between the source and drain. Also, in the case where the gate electrode is located below the source electrode 24 (or drain electrode 25) (see FIG. 9(B)), as in this embodiment, when a specific potential is applied to the gate electrode, the Schottky barrier between the source electrode 24 (or drain electrode 25) and the carbon nanotube film changes, which is thought to increase the current between the source and drain.

[0075] The voltage applied to the gate electrode 34 can be different from that of the source electrode 24 and the drain electrode 25. However, since this would result in extremely complicated wiring, it is preferable to short-circuit the gate electrode 34 to either the source electrode 24 or the drain electrode 25, as in this embodiment. This facilitates integration as a detector. Note that, when a portion of the gate electrode is located below the source electrode, as in this embodiment, it is preferable to apply a different potential to the gate electrode than to the source electrode, and therefore, when short-circuiting the gate electrode, it is preferable to short-circuit it with the drain electrode. Conversely, when the gate electrode is located below the drain electrode, it is preferable to short-circuit the gate electrode with the source electrode.

[0076] (Another example of a back gate type) FIG. 10 shows the structure of another example of a back-gate infrared bolometer, in which gate electrodes 34 are arranged in a U-shape, from D to G to I to F. This is the infrared bolometer shown in FIG. 9 , with gate electrodes 34 further extended from I to F. (A) is a top perspective view of the bolometer, and (B) is a cross-sectional view of the infrared detection unit along each symbol. In this embodiment, gate electrode 34 is short-circuited with drain electrode 25 at positions D and F. Compared to the embodiment shown in FIG. 9 , in the embodiment shown in FIG. 10 , carriers can be induced in the carbon nanotube film even above the gate electrode in portions I to F, thereby further increasing the source-drain current. Meanwhile, as mentioned above, when an infrared reflector is provided on the substrate, the amount of infrared light received by infrared detection unit 13 may be reduced.

[0077] FIG. 11 shows the structure of another example of a back-gate infrared bolometer, in which gate electrodes 34 are arranged in a grid pattern. (A) is a top view of the bolometer, and (B) is a cross-sectional view of the infrared detection unit along the respective symbols. In this embodiment, the gate electrode 34 is short-circuited with the drain electrode 25 at positions D and F. In the embodiment shown in FIG. 11, the area of ​​the gate electrode located below the source electrode and drain electrode is further increased, allowing carriers to be induced in the carbon nanotube film over a wider area, further increasing the source-drain current. On the other hand, as mentioned above, when an infrared reflector is provided on the substrate, the amount of infrared light received by the infrared detection unit 13 may be reduced. The area and shape of the gate electrode located below the source electrode and drain electrode are preferably set to balance the carrier induction effect in the carbon nanotube film and the amount of infrared light received by the infrared detection unit 13.

[0078] 12 shows the structure of another example of a back-gate type infrared bolometer, in which gate electrodes 34 are arranged in an L-shape of D-G-I, similar to the infrared bolometer of FIG. 9, but the drain electrode is not connected to the wiring at part D. In this example, gate electrode 34 is short-circuited with drain electrode 25 at position F. That is, while the three examples of infrared bolometers shown in FIGS. 9, 10, and 11 were electrically connected in the order of wiring → drain electrode → gate electrode, in the embodiment of FIG. 12, the electrical connections are made in the order of wiring → gate electrode → drain electrode.

[0079] The shape and electrical connection of the gate electrode in the back-gate type infrared bolometer can be changed in various ways and are not limited to the above.

[0080] <Infrared bolometer manufacturing method> The basic structure of the infrared bolometer of this embodiment can be manufactured by referring to Patent Document 1, and in that case, the infrared detection section should be manufactured so as to have a structure having a carbon nanotube film as a light detection section and a top-type or back-type gate electrode.

[0081] That is, in one aspect of the manufacturing method, a top-gate type infrared bolometer can be manufactured by the following manufacturing method.

[0082] 1. A method for manufacturing an infrared bolometer having an infrared detection unit supported on a substrate by support legs so as to be spaced apart from the substrate, comprising: The step of manufacturing the infrared detection unit includes: a step (ta) of forming a first insulating film; A step (tb) of forming the carbon nanotube film into a predetermined shape; a step (tc) of forming a source electrode and a drain electrode spaced apart from each other and electrically contacting at least a portion of the carbon nanotube film; a step (td) of forming a second insulating film on the carbon nanotube film, the source electrode, and the drain electrode; forming a gate electrode on the second insulating film, the gate electrode overlapping at least a portion of the carbon nanotube film via the second insulating film and electrically connected to the drain electrode; A method for manufacturing an infrared bolometer, comprising:

[0083] In the step (te), it is also preferable to form the gate electrode so as to overlap at least a part of the source electrode via an insulating film.

[0084] Similarly, in one embodiment of the manufacturing method, a back-gate type infrared bolometer can be manufactured by the following manufacturing method.

[0085] 1. A method for manufacturing an infrared bolometer having an infrared detection unit supported on a substrate by support legs so as to be spaced apart from the substrate, comprising: The step of manufacturing the infrared detection unit includes: A step (ba) of forming a first insulating film; a step (bb) of forming a gate electrode of a predetermined shape; A step (bc) of forming a second insulating film; (b) forming the carbon nanotube film into a predetermined shape; and forming a source electrode and a drain electrode spaced apart from each other and electrically contacting at least a portion of the carbon nanotube film, and connecting the drain electrode to the gate electrode; A method for manufacturing an infrared bolometer, comprising:

[0086] When forming the gate electrode in the step (bb), it is also preferable to set the shape of the gate electrode so that it overlaps with at least a part of the source electrode produced in the step (be) via an insulating film.

[0087] Here, in order to manufacture "an infrared detection unit supported on a substrate by support legs so as to be spaced apart from the substrate," generally, Step (A) of forming a sacrificial layer of a predetermined shape on, for example, a semiconductor substrate (on which an interlayer insulating film has been formed if necessary); a step (B1) of forming at least a part of an infrared detection unit on the sacrificial layer, and a step (B2) of forming at least a part of a support leg; a step (C) of etching and removing the sacrificial layer to form a gap between the semiconductor substrate and the infrared detection unit, thereby forming a structure in which the infrared detection unit is supported by the support legs; and If the infrared detection unit is not completed in step (B), the remaining step (D1) to complete it, and if the support legs are not completed in step (B), the remaining step (D2) to complete them. It can be produced by

[0088] That is, in steps (B1) and (D1), in the manufacture of a top-gate type infrared bolometer, the previously described steps (ta) to (te) are carried out, and in the manufacture of a back-gate type infrared bolometer, the previously described steps (ba) to (be) are carried out.

[0089] That is, in both the methods for manufacturing a top-gate type and a back-gate type infrared bolometer, the timing for etching away the sacrificial layer is arbitrary, and the sacrificial layer may be etched away after the entire infrared detection unit is fabricated (i.e., after step (te) or after step (be)), or the sacrificial layer may be etched away after forming at least a portion of the infrared detection unit, for example, after forming an insulating film that forms the bottom surface (i.e., after step (ta) or after step (ba)), or it can be performed at any appropriate time. The same applies to the supporting legs; it is sufficient that at least a portion of the supporting legs, for example, an insulating film that forms the bottom surface of the supporting legs, has been formed before the sacrificial layer is etched away, and the sacrificial layer may also be etched away after wiring and further an insulating film on the wiring have been formed.

[0090] The shapes and positional relationships of the carbon nanotube film, source electrode, drain electrode, and gate electrode in the infrared detection section can be as described for the top-gate infrared bolometer and back-gate infrared bolometer, and they can be manufactured by known methods.

[0091] Although one cell (single element) of a bolometer is shown above, any element structure and array structure that can be used for a bolometer can be applied without any particular restrictions. For example, bolometer elements can be arranged in an array to form a bolometer array. An array in which multiple elements are arranged two-dimensionally, such as those used in image sensors, can also be used.

[0092] The bolometer using the carbon nanotube film of the present disclosure can be particularly suitably used for detecting not only infrared light but also electromagnetic waves having wavelengths of, for example, 0.7 μm to 1 mm. Examples of electromagnetic waves falling within this wavelength range include infrared light and terahertz waves.

[0093] Although the present disclosure has been described above with reference to the drawings, the present disclosure is not limited to the above. Various modifications that can be understood by a person skilled in the art can be made to the configuration and details of the present disclosure within the scope of the present disclosure.

[0094] (Appendix 1) A substrate; An infrared detection unit; a support leg that supports the infrared detection unit so that the infrared detection unit is disposed at a distance from one surface of the substrate; An infrared bolometer comprising: The infrared detection unit spaced apart source and drain electrodes; a carbon nanotube film as a light detection unit that is present between the two electrodes and that at least partially overlaps and is in electrical contact with the two electrodes; and a gate electrode provided above or below the carbon nanotube film via an insulating film; and An infrared bolometer, wherein a voltage is applied between the source electrode and the drain electrode, and the gate electrode is electrically short-circuited to one of the source electrode and the drain electrode. (Appendix 2) 2. The infrared bolometer of claim 1, wherein an infrared reflector is present on the substrate. (Appendix 3) 3. The infrared bolometer according to claim 1, wherein the gate electrode is formed on the carbon nanotube film via an insulating film. (Appendix 4) 3. The infrared bolometer according to claim 1, wherein the gate electrode is formed below the carbon nanotube film via an insulating film. (Appendix 5) An infrared bolometer according to any one of the preceding appendices, wherein the infrared detection unit and the support legs have wiring for supplying power to the source electrode and / or the drain electrode. (Appendix 6) 10. The infrared bolometer according to claim 1, wherein the infrared detection unit is a bolometer array having a plurality of infrared detection units. (Appendix 7) 1. A method for manufacturing an infrared bolometer having an infrared detection unit supported on a substrate by support legs so as to be spaced apart from the substrate, comprising: The step of manufacturing the infrared detection unit includes: a step (ta) of forming a first insulating film; A step (tb) of forming the carbon nanotube film into a predetermined shape; a step (tc) of forming a source electrode and a drain electrode spaced apart from each other and electrically contacting at least a portion of the carbon nanotube film; a step (td) of forming a second insulating film on the carbon nanotube film, the source electrode, and the drain electrode; and forming a gate electrode on the second insulating film, the gate electrode overlapping at least a portion of the carbon nanotube film via the second insulating film and electrically connected to the drain electrode; A method for manufacturing an infrared bolometer, comprising: (Appendix 8) 1. A method for manufacturing an infrared bolometer having an infrared detection unit supported on a substrate by support legs so as to be spaced apart from the substrate, comprising: The step of manufacturing the infrared detection unit includes: A step (ba) of forming a first insulating film; a step (bb) of forming a gate electrode of a predetermined shape; A step (bc) of forming a second insulating film; (b) forming the carbon nanotube film into a predetermined shape; and forming a source electrode and a drain electrode spaced apart from each other and electrically contacting at least a portion of the carbon nanotube film, and connecting the drain electrode to the gate electrode; A method for manufacturing an infrared bolometer, comprising: [Explanation of symbols]

[0095] 10 bolometers 12 PCB 13 Infrared detector 15 Support legs 16 Wiring 18 insulating film 22 Carbon nanotube film 24 Source electrode 25 Drain electrode 34 gate electrode

Claims

1. A substrate; An infrared detection unit; a support leg that supports the infrared detection unit so that the infrared detection unit is disposed at a distance from one surface of the substrate; An infrared bolometer comprising: The infrared detection unit spaced apart source and drain electrodes; a carbon nanotube film as a light detection unit that is present between the two electrodes and that at least partially overlaps and is in electrical contact with the two electrodes; and a gate electrode provided above or below the carbon nanotube film via an insulating film; and An infrared bolometer, wherein a voltage is applied between the source electrode and the drain electrode, and the gate electrode is electrically short-circuited to one of the source electrode and the drain electrode.

2. 10. The infrared bolometer of claim 1, wherein an infrared reflector is present on the substrate.

3. 3. The infrared bolometer according to claim 1, wherein the gate electrode is formed on the carbon nanotube film via an insulating film.

4. 3. The infrared bolometer according to claim 1, wherein the gate electrode is formed below the carbon nanotube film via an insulating film.

5. 3. The infrared bolometer according to claim 1, wherein the infrared detecting portion and the supporting leg have wiring for supplying power to the source electrode and / or the drain electrode.

6. 3. The infrared bolometer according to claim 1, wherein the infrared detecting section is a bolometer array having a plurality of infrared detecting sections.

7. 1. A method for manufacturing an infrared bolometer having an infrared detection unit supported on a substrate by support legs so as to be spaced apart from the substrate, comprising: The step of manufacturing the infrared detection unit includes: a step (ta) of forming a first insulating film; a step (tb) of forming the carbon nanotube film into a predetermined shape; a step (tc) of forming a source electrode and a drain electrode spaced apart from each other and electrically contacting at least a portion of the carbon nanotube film; a step (td) of forming a second insulating film on the carbon nanotube film, the source electrode, and the drain electrode; and a step (te) of forming a gate electrode on the second insulating film, the gate electrode overlapping at least a portion of the carbon nanotube film via the second insulating film and electrically connected to the drain electrode; A method for manufacturing an infrared bolometer, comprising:

8. 1. A method for manufacturing an infrared bolometer having an infrared detection unit supported on a substrate by support legs so as to be spaced apart from the substrate, comprising: The step of manufacturing the infrared detection unit includes: a step (ba) of forming a first insulating film; a step (bb) of forming a gate electrode of a predetermined shape; a step (bc) of forming a second insulating film; (b) forming the carbon nanotube film into a predetermined shape; and a step (be) of forming a source electrode and a drain electrode spaced apart from each other and electrically contacting at least a portion of the carbon nanotube film, and connecting the drain electrode to the gate electrode; A method for manufacturing an infrared bolometer, comprising:

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