Metal-semiconductor contact structure, solar cell and photovoltaic module

Abstract

SOLUTION: To provide a metal-semiconductor contact structure, a solar cell, and a photovoltaic module. A metal-semiconductor contact structure, comprising a doped semiconductor layer and a metal electrode in contact with the doped semiconductor layer, wherein a contact interface between the doped semiconductor layer and the metal electrode has a first conductive region, and the first conductive region comprises a first conductive structure, wherein the first conductive structure comprises a plurality of first metal particles distributed in the first conductive region, and the first metal particles are spherical and / or ellipsoidal; A first conductive structure in contact with at least a portion of the doped semiconductor layer, and a second conductive structure, wherein the second conductive structure is radial and at least partially located on the surface of the first metal particles, and the radial direction is toward the metal electrode, wherein the metal electrode, the first metal particles and the second conductive structure all have the same metal element; EFFECT: The metal-semiconductor contact structure can improve the carrier transport capability and improve the photoelectric conversion efficiency of the solar cell.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] This application relates to the field of solar cells, and in particular to metal-semiconductor contact structures, solar cells and photovoltaic modules. [Background technology]

[0002] In solar cells, the contact performance between the metal electrode and the doped semiconductor layer has a significant impact on the electrical performance index of the solar cell, such as the photoelectric conversion efficiency. The contact position between the metal electrode and the doped semiconductor layer always leads to significant carrier recombination, resulting in high current loss and limiting further improvement of the electrical performance, such as the photoelectric conversion efficiency, of the solar cell. Summary of the Invention

[0003] In order to solve the above technical problems, the present application discloses a metal-semiconductor contact structure, The metal-semiconductor contact structure comprises: a doped semiconductor layer; a metal electrode in contact with the doped semiconductor layer; a first conductive region at the contact interface between the doped semiconductor layer and the metal electrode; The first conductive region includes: a first conductive configuration comprising a plurality of first metal particles distributed in the first conductive region and having spherical and / or ellipsoidal shapes, at least a portion of the first conductive configuration contacting the doped semiconductor layer; a second conductive configuration, the second conductive configuration being radial, at least a portion of the second conductive configuration being located on a surface of the first metal particle, and the direction in which the second conductive configuration is radial is toward the metal electrode; The metal electrode, the first metal particles, and the second conductive structure all have the same metal element.

[0004] Furthermore, the ratio of the number of the second conductive constituents to the number of the first metal particles is 1:4000 to 1:1.

[0005] Furthermore, the ratio of the number of the second conductive constituents to the number of the first metal particles is 1:1000 to 1:20.

[0006] The particle size of the first metal particles is 20 nm to 360 nm.

[0007] Furthermore, within any 10 μm x 10 μm area of ​​the first conductive region, the number of the first metal particles is 200 to 4000, the number of the first metal particles having a particle size within the range of 100 nm to 360 nm is 100 to 1500, and the number of the first metal particles having a particle size of less than 100 nm is 100 to 2500.

[0008] Furthermore, the first conductive structure further includes second metal particles attached to the surfaces of the first metal particles, wherein the particle diameter of the first metal particles is 20 nm to 360 nm, the particle diameter of the second metal particles is less than 20 nm, the number of second metal particles attached to one of the first metal particles is 1 to 50, and the second metal particles have the same metal element as the first metal particles.

[0009] Furthermore, the size of the second conductive structure is 0.2 μm to 2 μm.

[0010] Furthermore, within any 10 μm x 10 μm area of ​​the first conductive region, the number of the second conductive features is 1 to 450, the number of the second conductive features whose size is within the range of 1 μm to 2 μm is 1 to 100, and the number of the second conductive features whose size is less than 1 μm is 1 to 350.

[0011] Furthermore, the second conductive structure includes a plurality of stripe-shaped first sub-structures diverging toward the metal electrode, and the number of the first sub-structures is 2 to 20.

[0012] Furthermore, any of the first sub-components is composed of a plurality of second sub-components, each of which is shaped like a grain of wheat, and the plurality of second sub-components are combined to form the first sub-component shaped like an ear of wheat; The second sub-component has a cross-sectional dimension of 2 to 40 nm.

[0013] Furthermore, a contact interface between the doped semiconductor layer and the metal electrode further comprises a second conductive region located at an edge of the first conductive region, the second conductive region including an unburned passivation layer, and the first conductive structure and / or the second conductive structure are disposed between the unburned passivation layer and the metal electrode; When the second conductive region includes the first conductive configuration, the density of the first conductive configuration in the second conductive region is lower than the density of the first conductive configuration in the first conductive region, and when the second conductive region includes the second conductive configuration, the density of the second conductive configuration in the second conductive region is lower than the density of the second conductive configuration in the first conductive region.

[0014] Furthermore, the doped semiconductor layer may include any one of a doped amorphous silicon layer, a doped polysilicon layer, a doped microcrystalline silicon layer, or a doped crystalline silicon layer; and / or the doping element in the doped semiconductor layer is an N-type doping element or a P-type doping element; and / or The metal element includes silver, and / or At least a portion of the second conductive structure is located on a surface of the doped semiconductor layer facing the metal electrode.

[0015] In a second aspect, the present application provides a solar cell, The solar cell comprises: a silicon substrate; a doped semiconductor layer disposed on the silicon substrate; a metal electrode in contact with the doped semiconductor layer; a first conductive region at the contact interface between the doped semiconductor layer and the metal electrode; The first conductive region includes: a first conductive configuration comprising a plurality of first metal particles distributed in the first conductive region and having spherical and / or ellipsoidal shapes, at least a portion of the first conductive configuration contacting the doped semiconductor layer; a second conductive configuration, the second conductive configuration being radial, at least a portion of the second conductive configuration being located on a surface of the first metal particle, and the direction in which the second conductive configuration is radial is toward the metal electrode; The metal electrode, the first metal particles, and the second conductive structure all have the same metal element.

[0016] Furthermore, the ratio of the number of the second conductive constituents to the number of the first metal particles is 1:4000 to 1:1.

[0017] Furthermore, the ratio of the number of the second conductive constituents to the number of the first metal particles is 1:1000 to 1:20.

[0018] Furthermore, the particle size of the first metal particles is 20 nm to 360 nm.

[0019] Furthermore, within any 10 μm x 10 μm area of ​​the first conductive region, the number of the first metal particles is 200 to 4000, the number of the first metal particles having a particle size within the range of 100 nm to 360 nm is 100 to 1500, and the number of the first metal particles having a particle size less than 100 nm is 100 to 2500.

[0020] Furthermore, the first conductive structure further includes second metal particles attached to the surfaces of the first metal particles, wherein the particle diameter of the first metal particles is 20 nm to 360 nm, the particle diameter of the second metal particles is less than 20 nm, the number of second metal particles attached to one of the first metal particles is 1 to 50, and the second metal particles have the same metal element as the first metal particles.

[0021] Furthermore, the size of the second conductive structure is 0.2 μm to 2 μm.

[0022] Furthermore, within any 10 μm x 10 μm area of ​​the first conductive region, the number of the second conductive features is 1 to 450, the number of the second conductive features whose size is within the range of 1 μm to 2 μm is 1 to 100, and the number of the second conductive features whose size is less than 1 μm is 1 to 350.

[0023] Furthermore, the second conductive structure includes a plurality of stripe-shaped first sub-structures diverging toward the metal electrode, and the number of the first sub-structures is 2 to 20.

[0024] Furthermore, any of the first sub-components is composed of a plurality of second sub-components, each of which is shaped like a grain of wheat, and the plurality of second sub-components are combined to form the first sub-component shaped like an ear of wheat; The second sub-component has a cross-sectional dimension of 2 to 40 nm.

[0025] Furthermore, a contact interface between the doped semiconductor layer and the metal electrode further comprises a second conductive region located at an edge of the first conductive region, the second conductive region including an unburned passivation layer, and the first conductive structure and / or the second conductive structure are disposed between the unburned passivation layer and the metal electrode; When the second conductive region includes the first conductive configuration, the density of the first conductive configuration in the second conductive region is lower than the density of the first conductive configuration in the first conductive region, and when the second conductive region includes the second conductive configuration, the density of the second conductive configuration in the second conductive region is lower than the density of the second conductive configuration in the first conductive region.

[0026] Additionally, the solar cell further includes a dielectric layer disposed between the silicon substrate and the doped semiconductor layer.

[0027] Additionally, the solar cell further includes a passivation layer disposed on the side of the doped semiconductor opposite the silicon substrate.

[0028] Furthermore, the doped semiconductor layer includes an N-type doped semiconductor layer and a P-type doped semiconductor layer, the N-type doped semiconductor layer and the P-type doped semiconductor layer are alternately arranged in an interdigitated pattern on the non-light-receiving surface of the silicon substrate, and a separation region is provided between the N-type doped semiconductor layer and the P-type doped semiconductor layer; The metal electrodes include a first metal electrode and a second metal electrode, the first metal electrode being in contact with the N-type doped semiconductor layer, and the second metal electrode being in contact with the P-type doped semiconductor layer.

[0029] In a third aspect, the present application provides a photovoltaic module, the photovoltaic module comprising: solar cells according to the second aspect, which are connected in series and / or in parallel to form a solar cell string; and a packaging structure for packaging the solar cell string therein.

[0030] Compared with the prior art, the present application has at least the following beneficial effects:

[0031] The metal-semiconductor contact structure provided in the present embodiment has advantages such as a wide variety of carrier transport structures and a large number of carrier transport paths, which can improve the carrier transport ability of the metal-semiconductor contact structure, improve the contact performance between the doped semiconductor layer and the metal electrode, and increase the photoelectric conversion efficiency of the solar cell.

[0032] In order to more clearly explain the technical aspects of the embodiments of the present application, the accompanying drawings used in the embodiments will be briefly introduced below. However, the accompanying drawings in the following description are only some embodiments of the present application, and it is obvious that a person skilled in the art can derive other accompanying drawings from these accompanying drawings without paying any creative effort. [Brief explanation of the drawings]

[0033] [Figure 1] FIG. 1 is a schematic diagram illustrating the configuration of a first solar cell according to an embodiment of the present invention. [Figure 2] FIG. 2 is an enlarged schematic diagram of the configuration of part A in FIG. [Figure 3] FIG. 2 is a schematic diagram of a method for measuring the size of a first metal particle in an example of the present application. [Figure 4] FIG. 4 is a schematic diagram of a method for measuring the size of a second conductive structure in an embodiment of the present invention. [Figure 5] FIG. 2 is a schematic diagram of a second conductive structure in an embodiment of the present invention. [Figure 6] FIG. 3 is an enlarged schematic view of the configuration of part B in FIG. 2. [Figure 7] FIG. 2 is a schematic diagram illustrating the configuration of a second solar cell according to an embodiment of the present invention. [Figure 8] FIG. 2 is a scanning electron microscope view of the metal-semiconductor contact structure of the solar cell of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0034] The technical aspects of the present invention will be described below clearly and completely with reference to the accompanying drawings of the present invention, but it is clear that the described embodiments are only a part of the present invention and do not include all of the embodiments. Based on the present invention, other embodiments that can be obtained by a person skilled in the art without paying any creative effort also fall within the scope of protection of the present invention.

[0035] In this application, terms such as "upper," "lower," "left," "right," "front," "rear," "top," "bottom," "inner," "outer," "vertical," "horizontal," "lateral," "longitudinal," etc., indicate orientations or positional relationships based on those shown in the accompanying drawings. These terms are primarily used to better explain the application and its embodiments, and are not intended to limit the illustrated devices, elements, or components to have a particular orientation or to be constructed and operated in a particular orientation.

[0036] Furthermore, the terms described above may be used to indicate other meanings in addition to orientation or positional relationships, for example, the term "on" may also be used to indicate a particular dependency or connection relationship in some cases. Those skilled in the art will be able to understand the specific meanings of these terms in the present application depending on the specific circumstances.

[0037] Furthermore, terms such as "mounted," "installed," "provided," "connected," and "contacted" should be understood broadly. For example, they may refer to a fixed connection, a removable connection, or an integral structure, a mechanical connection, an electrical connection, a direct connection, an indirect connection via an intermediate medium, or an internal connection between two devices, elements, or components. Those skilled in the art can understand the specific meanings of the above terms in this application depending on the specific circumstances.

[0038] Furthermore, terms such as "first," "second," etc. are used primarily to distinguish between different devices, elements, or components (which may be the same or different in specific type or structure) and are not intended to state or imply the relative importance or number of the indicated devices, elements, or components. Unless otherwise specified, the term "plurality" means two or more.

[0039] In solar cells, carriers are transported to the metal electrode by the doped semiconductor layer, so the contact performance between the doped semiconductor layer and the metal electrode has a significant impact on the performance of the solar cell, such as the photoelectric conversion efficiency.

[0040] However, the contact point between the doped semiconductor layer and the metal electrode often suffers from large-area interface damage due to deep erosion by the metal electrode paste, resulting in serious recombination loss between the doped semiconductor layer and the metal electrode, ultimately making it difficult to further improve the photoelectric conversion efficiency of the solar cell. Therefore, it is necessary to further optimize the contact performance between the doped semiconductor layer and the metal electrode to improve the contact performance between the two and further improve the photoelectric conversion efficiency of the solar cell.

[0041] To solve the above technical problems, the present embodiments provide a metal-semiconductor contact structure, a solar cell, and a photovoltaic module, which optimize the contact performance of the metal-semiconductor contact structure and improve its conductive ability to solve the above problems. Because the metal-semiconductor contact structure of the present embodiments is applied to solar cells (especially crystalline silicon solar cells), the following description of the solar cell of the present embodiments will also introduce the metal-semiconductor contact structure, and will not be repeated separately.

[0042] The present embodiment provides a solar cell having a metal-semiconductor contact structure 1. As shown in FIGS. 1 and 2, FIG. 1 is a schematic diagram of the structure of a first solar cell of the present embodiment, and FIG. 2 is an enlarged schematic diagram of the structure of part A in FIG. 1. The solar cell has: a silicon substrate 100; a doped semiconductor layer 200 disposed on a silicon substrate 100; The doped semiconductor layer 200 and the metal electrode 300 are in contact with each other.

[0043] That is, the doped semiconductor layer 200 and the metal electrode 300 come into contact with each other to form the metal-semiconductor contact structure 1. Here, the mutual contact between the doped semiconductor layer 200 and the metal electrode 300 is physical contact, that is, the doped semiconductor layer 200 and the metal electrode 300 come into direct contact with each other.

[0044] As shown in FIG. 2, the metal-semiconductor contact structure 1 has a first conductive region 1a at the contact interface between the doped semiconductor layer 200 and the metal electrode 300. In the first conductive region 1a: a first conductive configuration 11 including a plurality of spherical and / or ellipsoidal first metal particles 111 distributed in a first conductive region 1a and in contact with at least a portion of the doped semiconductor layer 200; a second conductive configuration (12) having a radial shape, at least a portion of which is located on the surface of the first metal particle (111), the second conductive configuration (12) having a radial direction toward the metal electrode (300); The metal electrode 300, the first metal particles 111, and the second conductive structure 12 all have the same metal element.

[0045] For example, when the metal electrode 300 is a silver electrode, the first metal particles 111 are silver particles, and the radial second conductive structures 12 also contain silver elements, specifically, the second conductive structures 12 are radially formed by the crystallization of silver ions after an electrochemical redox reaction.

[0046] The metal-semiconductor contact structure 1 provided in the present embodiment has advantages such as a wide variety of carrier transport structures and many carrier transport paths, which can improve the carrier transport ability of the metal-semiconductor contact structure 1, improve the contact performance between the doped semiconductor layer 200 and the metal electrode 300, and increase the photoelectric conversion efficiency of the solar cell.

[0047] In the present embodiment, both the radial second conductive structures 12 and the spherical and / or ellipsoidal first metal particles 111 have carrier transport capability, and more importantly, at least a portion of the second conductive structures 12 is located on the surface of the first metal particles 111, so the combination of the second conductive structures 12 and the first metal particles 111 may also be considered as another carrier transport structure. This provides a wide variety of structures that can exhibit the carrier transport function, contributing to improved carrier transport capability.

[0048] Based on this, some of the structures described above can provide multiple different carrier transport paths, allowing carriers to be transported smoothly from the doped semiconductor layer 200 to the metal electrode 300 with less hindrance.

[0049] The first carrier transport path includes the silicon substrate 100, the doped semiconductor layer 200, the first metal particles 111, the radial second conductive structure 12, and the metal electrode 300. Photogenerated carriers generated in the silicon substrate 100 are transported into the doped semiconductor layer 200, then transported by the first metal particles 111 in direct contact with the doped semiconductor layer 200, and then transported to the metal electrode 300 by the radial second conductive structure 12 in direct contact with the first metal particles 111. The first metal particles 111 and the second conductive structure 12 are both metals and therefore have good conductive capabilities. In particular, the second conductive structure 12 is radial, and the radial divergence direction is toward the metal electrode 300. Due to the characteristics of this diverging structure, the carrier transport path is longer and more numerous, reducing resistance and thus more effectively improving carrier transport capability.

[0050] The second carrier transport path includes the silicon substrate 100, the doped semiconductor layer 200, the radial second conductive structure 12, and the metal electrode 300. A portion of the radial second conductive structure 12 is located on the surface of the first metal particles 111, and another portion is grown directly on the surface of the doped semiconductor layer 200 facing the metal electrode 300. This portion of the second conductive structure 12 can transport carriers from within the doped semiconductor layer 200 to the metal electrode 300. Furthermore, the metal-semiconductor contact structure 1 of this embodiment has a third carrier transport path including the silicon substrate 100, the first metal particles 111 dispersed in the first conductive region 1 a, and the metal electrode 300. Although at least some of these first metal particles 111 are not in direct contact with each other, carriers can conduct electricity through these first metal particles 111 by utilizing the electron tunneling effect.

[0051] As can be seen from the above, the metal-semiconductor contact structure 1 of the present embodiment has a wide variety of carrier transport structures and multiple carrier transport paths, and the above-mentioned structural characteristics can improve the contact performance between the doped semiconductor layer 200 and the metal electrode 300, reduce carrier transport loss, and further improve the photoelectric conversion efficiency of the solar cell.

[0052] The conductive configuration within the first conductive region 1a will be further described below.

[0053] The ratio of the quantity of the second conductive structure 12 to the first metal particles 111 is 1:4000 to 1: 1. Exemplarily, the ratio of the quantity of the second conductive structure 12 to the first metal particles 111 is 1:4000, 1:3000, 1:2000, 1:1000, 1:800, 1:500, 1:200, 1:100, 1:80, 1:50, 1:20, 1:10, or 1:1.

[0054] When the ratio of the quantities of these two conductive elements is controlled within the above range, the open circuit voltage and contact performance of the solar cell are well balanced, and the occurrence of problems such as increased damage to the doped semiconductor layer 200 or the silicon substrate 100 or increased contact resistance can be reduced.

[0055] It should be understood that the ratio of the quantity of the second conductive configuration 12 to the first metal particles 111 can be calculated by measuring the number of the second conductive configuration 12 and the first metal particles 111 in any 10 μm × 10 μm area. Specifically, it is possible to select 10 μm × 10 μm areas at five different positions, count the number of the second conductive configuration 12 and the first metal particles 111, and calculate the ratio of the quantity of the two. The range between the minimum and maximum values ​​of the ratio of the quantity at these different positions reflects the range of the ratio of the quantity of the second conductive configuration 12 to the first metal particles 111, and the average value of the ratio of the quantity at these different positions reflects the average level of the ratio of the quantity of the second conductive configuration 12 to the first metal particles 111.

[0056] Preferably, the ratio of the number of second conductive members 12 to the number of first metal particles 111 is 1:1000 to 1:20.

[0057] In the first conductive structure 11, the particle size of the first metal particles 111 is 20 nm to 360 nm. Exemplarily, the particle size of the first metal particles 111 is 20 nm, 50 nm, 80 nm, 100 nm, 150 nm, 180 nm, 200 nm, 250 nm, 280 nm, 300 nm, 320 nm, or 360 nm.

[0058] By controlling the particle size of the first metal particles 111 within the above range, an appropriate growth space for the radial second conductive structures 12 is provided, and the second conductive structures 12 exhibit a good radial appearance, thereby improving the carrier transport capability. This avoids a situation in which a particle size that is too small adversely affects the growth of the second conductive structures 12 on the surface of the first metal particles 111, making it difficult for the second conductive structures 12 to form a metal structure with a remarkable radial appearance, and also reduces the occurrence of a situation in which a particle size that is too large inhibits the divergence, growth, and extension of the second conductive structures 12.

[0059] The first metal particles 111 may be spherical and / or ellipsoidal. When the first metal particles 111 are spherical, the size of the first metal particles 111 refers to the diameter of the sphere. When the first metal particles 111 are ellipsoidal, the particle size of the first metal particles 111 refers to the longest dimension of the ellipsoid. For example, as shown in FIG. 3, taking an irregular ellipsoid as an example, the ellipsoid has two points that are farthest apart along a first direction, and the linear distance d1 between these two points is the longest dimension of the ellipsoid and is also the particle size dimension of the ellipsoid.

[0060] Furthermore, in any 10 μm × 10 μm area of ​​the first conductive region 1a, the number of first metal particles 111 is 200 to 4000. The number of first metal particles 111 with a particle size in the range of 100 nm to 360 nm is 100 to 1500, and the number of first metal particles 111 with a particle size less than 100 nm is 100 to 2500.

[0061] 2, the first conductive structure 11 includes not only the above-described first metal particles 111 but also second metal particles 112 attached to the surfaces of the first metal particles 111. The particle diameter of the second metal particles 112 is less than 20 nm, the number of second metal particles 112 attached to one first metal particle 111 is 1 to 50, and the second metal particles 112 have the same metal element as the first metal particles 111.

[0062] By attaching the second metal particles 112 having the above-mentioned number and particle size onto the first metal particles 111, the surface area of ​​the first conductive structure 11 can be further increased, and further optimize the contact performance between the doped semiconductor layer 200 and the metal electrode 300, contributing to reducing the contact resistance between the two.

[0063] Furthermore, the size of the second conductive structure 12 is 0.2 μm to 2 μm. Illustratively, the size of the second conductive structure 12 is 0.2 μm, 0.5 μm, 0.8 μm, 1.0 μm, 1.2 μm, 1.5 μm, 1.8 μm, or 2 μm.

[0064] As shown in FIG. 4, the second conductive configuration 12 has a radial structure, and the size of the second conductive configuration 12 refers to the width between the two furthest points of the second conductive configuration 12 diverging outward.

[0065] When the size of the second conductive structure 12 is within the above-mentioned range, it has good carrier transport ability, reduces the damage range of the contact interface between the doped semiconductor layer 200 and the metal electrode 300, reduces the occurrence of contact recombination, and further optimizes the contact performance between the doped semiconductor layer 200 and the metal electrode 300.

[0066] Furthermore, in any 10 μm × 10 μm area of ​​the first conductive region 1a, the number of second conductive configurations 12 is 1 to 450. The number of second conductive configurations 12 whose size is in the range of 1 μm to 2 μm is 1 to 100, and the number of second conductive configurations 12 whose size is less than 1 μm is 1 to 350.

[0067] 5, the second conductive structure 12 includes a plurality of stripe-shaped first sub-structures 121 diverging toward the metal electrode 300, and the number of the first sub-structures 121 is 2 to 20. Exemplarily, the number of the first sub-structures 121 is 2, 5, 8, 10, 12, 15, 18, or 20. The above-described number of first sub-structures 121 contributes to ensuring both the provision of more carrier transport paths and the accompanying reduction in the extent of excessive interfacial damage.

[0068] Each first sub-component 121 is made up of a plurality of grain-shaped second sub-components 1211, and a combination of the plurality of second sub-components 1211 forms the ear-shaped first sub-component 121. The cross-sectional dimension of the second sub-component 1211 is 2 nm to 40 nm.

[0069] That is, the second conductive structure 12 of the present embodiment is formed by a plurality of wheat ear-shaped first sub-structures 121 diverging toward the metal electrode 300, and each wheat ear-shaped first sub-structure 121 is formed by combining a plurality of wheat grain-shaped second sub-structures 1211. Due to the characteristics of this particular diverging structure, the second sub-structures 1211 have a higher divergence than the first sub-structure 1211, providing a larger contact area with the metal electrode 300 and contributing to further improving the carrier transport capacity.

[0070] The cross-sectional dimension of second sub-element 1211 being 2 nm to 40 nm includes any point value within the numerical range, for example, the cross-sectional dimension of second sub-element 1211 being 2 nm, 5 nm, 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, or 40 nm. Also, the cross-sectional dimension of second sub-element 1211 refers to the cross-sectional width corresponding to second sub-element 1211 projected onto the horizontal plane of silicon base layer 100.

[0071] The metal-semiconductor contact structure 1 of the present embodiment includes, in addition to the first conductive region 1a, a second conductive region 1b located at the contact interface between the doped semiconductor layer 200 and the metal electrode 300, and the second conductive region 1b is located at the edge of the first conductive region 1a. As shown in Figures 2 and 6, the second conductive region 1b includes an unburned passivation layer 400, and has the above-mentioned first conductive configuration 11 and second conductive configuration 12 between the unburned passivation layer 400 and the metal electrode 300. The density of the first conductive configuration 11 in the second conductive region 1b is lower than the density of the first conductive configuration 11 in the first conductive region 1a, and the density of the second conductive configuration 12 in the second conductive region 1b is lower than the density of the second conductive configuration 12 in the first conductive region 1a.

[0072] In the metal-semiconductor contact structure 1 of the present embodiment, in addition to having a first conductive region 1a with stronger carrier transport capability in the central region of the contact interface between the doped semiconductor layer 200 and the metal electrode 300, a second conductive region 1b is further provided at the edge of the first conductive region 1a. The position of the second conductive region 1b corresponds to the unburned portion of the passivation layer 400, and the position of the first conductive region 1a corresponds to the burned portion of the passivation layer 400, so that the doped semiconductor layer 200 is in direct contact with the metal electrode 300. For example, assuming that the metal electrode 300 is a sub-gate with a width of 20 μm to 35 μm, the first conductive region 1a is within a width range of 18 μm to 33 μm in the center of the gate line, and the second conductive region 1b is within a width range of 1 μm to 5 μm in the edge of the gate line.

[0073] In the second conductive region 1b, the unburned passivation layer 400 can protect the doped semiconductor layer 200 therein and serve as a passivation protection, thereby further reducing the extent of damage to the surface of the doped semiconductor layer 200 and reducing carrier contact recombination losses due to damage to the surface structure of the doped semiconductor layer 200. That is, the conductive structures in the central first conductive region 1a have a higher density and are more concentrated, so they play a dominant role in the carrier transport process. Although the density of the conductive structures in the second conductive region 1b is relatively low, the unburned passivation layer 400 in this region can serve as a passivation protection. Therefore, the metal-semiconductor contact structure 1 of the present application can not only improve carrier transport capability by optimizing the conductive structure, but also reduce the extent of the interface area of ​​the doped semiconductor layer 200 that is damaged by erosion, thereby reducing carrier recombination losses associated with erosion. In this way, by promoting the improvement of the contact performance between the semiconductor layer 200 doped from two sides and the metal electrode 300, the photoelectric conversion efficiency of the solar cell is ultimately effectively improved.

[0074] Other details of the metal-semiconductor contact structure 1 will be further described below.

[0075] In the present embodiment, the doped semiconductor layer 200 includes any one of a doped polysilicon layer, a doped microcrystalline silicon layer, and a doped crystalline silicon layer. For example, when the doped semiconductor layer 200 includes a doped crystalline silicon layer, the doped crystalline silicon layer is formed by thermally diffusing a doping element onto crystalline silicon. As another example, when the doped semiconductor layer 200 includes a doped polysilicon layer, the doped semiconductor layer 200 is a doped polysilicon layer containing a doping element obtained by an LPCVD or PECVD process.

[0076] The doping element in the doped semiconductor layer 200 is an N-type doping element or a P-type doping element. The N-type doping element includes at least one of phosphorus, antimony, or arsenic, and the P-type doping element includes at least one of boron, indium, or gallium. For example, the doped semiconductor layer 200 is doped with phosphorus because, when the main component is a polysilicon layer, doping with phosphorus can improve the carrier transport capability. Furthermore, the phosphorus-doped semiconductor layer 200 may be doped with other types of doping elements at a certain concentration, but the present application is not limited thereto.

[0077] In the present embodiment, the metal electrode 300 is mainly composed of a material corresponding to a metal element and may contain an appropriate amount of impurities. The metal electrode 300, the first metal particles 111, and the second conductive structure 12 all contain the same metal element. For example, the metal electrode 300 is a silver electrode mainly composed of silver element, but the silver electrode may contain metallic aluminum impurities (for example, the content of metallic aluminum impurities is 0.1 wt% or less).

[0078] Furthermore, the doped semiconductor layer 200 may be disposed on the non-light-receiving surface and / or the light-receiving surface of the silicon substrate 100, and correspondingly, the metal-semiconductor contact structure 1 may be disposed on the non-light-receiving surface and / or the light-receiving surface of the silicon substrate 100. Also, the metal-semiconductor contact structure 1 is preferably disposed on a flat surface, such as a polished surface of the silicon substrate 100.

[0079] Referring again to FIG. 1 , the solar cell shown in FIG. 1 will be further described by taking as an example a case where a metal-semiconductor contact structure 1 is provided on a non-light-receiving surface of a silicon substrate 100. In an alternative embodiment, the silicon substrate 100 is an N-type silicon substrate 100, and has a doped semiconductor layer 200 formed on the non-light-receiving surface of the silicon substrate 100 by a process such as LPCVD or PECVD. Specifically, the silicon substrate 100 has an N-type doped polysilicon layer. A metal electrode 300 is formed on and in contact with the N-type doped polysilicon layer, and the above-mentioned metal-semiconductor contact structure 1 is formed between the N-type doped polysilicon layer and the metal electrode 300. The silicon substrate 100 may also be a P-type silicon substrate 100, and the conductivity type of the doped semiconductor layer 200 may be the same as or different from that of the silicon substrate 100. It should be understood that the present application is not limited to the above-mentioned conductivity types.

[0080] The solar cell may have other functional layers in addition to the metal-semiconductor contact structure 1. For example, the non-light-receiving surface of the solar cell may have: a dielectric layer 500 disposed on a non-light-receiving surface of the silicon substrate 100 and positioned between the silicon substrate 100 and the doped semiconductor layer 200, the dielectric layer 500 forming a passivation contact structure together with the doped semiconductor layer 200, thereby improving carrier transport ability and passivation performance; The doped semiconductor layer 200 further includes a passivation layer 400 disposed on the surface opposite to the silicon substrate 100, the passivation layer 400 being used to improve passivation performance.

[0081] In the metal-semiconductor contact structure 1, the metal electrode 300 penetrates the passivation layer 400 and contacts the doped semiconductor layer 200, thereby forming the first conductive configuration 11 and the second conductive configuration 12 within the first conductive region 1a. However, the second conductive region 1b is formed between the metal electrode 300 and a small portion of the passivation layer 400 that is not completely burned away at the edge of the metal electrode 300.

[0082] The light-receiving surface of the solar cell may further include a P-type diffusion layer 600 formed by a thermal diffusion method on the light-receiving surface of the silicon substrate 100 to form a PN junction with the silicon substrate 100, a passivation anti-reflection layer 700 formed on the surface of the P-type diffusion layer 600 opposite the silicon substrate 100 to perform passivation and anti-reflection functions, and a light-receiving surface metal electrode 800 that penetrates the passivation anti-reflection layer 700 and makes ohmic contact with the P-type diffusion layer 600.

[0083] The above-mentioned method for manufacturing the solar cell will be explained below.

[0084] The above-mentioned semi-finished solar cell can be obtained by performing conventional processes such as texturing, thermal diffusion, chain cleaning, polishing, PECVD, RCA cleaning, and ALD deposition on the silicon substrate 100, doped semiconductor layer 200, and other layers, such as passivation layer 400. For example, thermal diffusion (e.g., boron diffusion) can be used to form a P-type diffusion layer 600 on the light-receiving surface of the silicon substrate 100. Chain cleaning and polishing can be used to remove unnecessary plating layers, oxide layers, and other layers, and smooth the non-light-receiving surface of the silicon substrate 100. Next, a PECVD process can be used to sequentially form a dielectric layer 500 and an N-type doped polysilicon layer on the non-light-receiving surface of the silicon substrate 100. Further, RCA cleaning can be used to remove unnecessary plating layers and other layers. Finally, an ALD process can be used to form a passivation layer 400 on the N-type doped polysilicon layer and a passivation anti-reflective layer 700 on the P-type diffusion layer 600, thereby completing the semi-finished solar cell. The N-type doped polysilicon layer is the doped semiconductor layer 200 .

[0085] An electrode paste is printed and sintered on the semi-finished solar cell product, and then a laser-induced contact process is performed to form the above-mentioned metal-semiconductor contact structure 1 between the doped semiconductor layer 200 and the metal electrode 300. Specifically, Printing an electrode paste on the passivation layer 400 on the doped semiconductor layer 200, the electrode paste including a glass phase material, a metal material, and an organic carrier, the metal material having the above-mentioned metal element; pre-sintering the electrode paste to form an electrode precursor; The method includes performing a laser-induced contact process on the surface of the electrode precursor opposite to the silicon base layer 100 (i.e., the light-receiving surface side of the silicon base layer 100), so that the electrode precursor forms a metal electrode 300, and the metal electrode 300 and the doped semiconductor layer 200 form a metal-semiconductor contact structure 1.

[0086] The above-mentioned process involves printing and sintering an electrode paste on the passivation layer 400 on the non-light-receiving surface of the silicon substrate 100, and then performing a laser-induced contact process on the light-receiving surface of the silicon substrate 100. After the laser energy penetrates the silicon substrate 100 and reaches the non-light-receiving surface side, a metal-semiconductor contact structure 1 having the characteristics of the above-mentioned structure can be formed.

[0087] Furthermore, in the step of pre-sintering the electrode paste, the sintering time is 0.5 to 8 seconds, which corresponds to the conditions of a total sintering time of 40 to 100 seconds and a sintering temperature of 700 to 800°C. Compared to the high-temperature pre-sintering operation in the related art, the examples of the present application employ such high-temperature pre-sintering conditions, but do not extensively corrode the surface of the doped silicon-based semiconductor layer.

[0088] Furthermore, in the step of performing laser-induced contact treatment on the surface of the electrode precursor opposite to the silicon base layer 100, a reverse bias voltage of 8 V to 14 V is applied. The level of heat generated when carriers generated by the laser-induced contact treatment pass through the contact interface between the doped semiconductor layer and the electrode precursor is closely related to the range of the reverse bias voltage. When the reverse bias voltage is within the range, high heat is likely to be generated when carriers pass through the contact interface. This high heat decomposes the glass phase material at the corresponding positions, providing space for the growth of the first conductive structure 11 and the second conductive structure 12.

[0089] Furthermore, in the step of laser-induced contact treatment, the conditions of the laser-induced contact treatment are a single wavelength spectrum of 500 nm to 1100 nm, a current density of 800 A / cm 2 ~1300A / cm 2 , including scanning speeds of 32m / s to 50m / s.

[0090] Regarding the above-mentioned conditions of the laser-induced contacting treatment, a laser with a single wavelength is used to excite the photo-generated carriers in the doped semiconductor layer 200. For example, the wavelength of the incident laser in the laser-induced contacting treatment is 532 nm, 635 nm, 650 nm, 808 nm, 980 nm, or 1064 nm. When the semiconductor element of the doped semiconductor layer 200 is silicon element and the laser-induced contacting treatment is performed by a laser, it is preferable to use a laser with a wavelength of 1064 nm or 808 nm.

[0091] Preferably, the method for fabricating the metal-semiconductor contact structure 1 further includes performing photo-implantation after pre-sintering the electrode paste and before performing laser-induced contact treatment on the surface of the electrode precursor opposite the silicon substrate 100. The photo-implantation process primarily serves to improve passivation performance. The photo-implantation annealing furnace process includes a first step of activating H atoms in the silicon nitride passivation film by increasing the temperature, and a second step of controlling the valence of the H atoms through photoirradiation, causing the H atoms to recombine with recombination centers (defects) in the P+ emitter and N-type substrate to form non-recombination centers. Ultimately, a good passivation effect is achieved, achieving the goals of improving the open-circuit voltage and fill factor.

[0092] Furthermore, compared to the process of performing laser-induced contact treatment followed by photoimplantation, the process of first pre-sintering the electrode paste at high temperature, then photoimplantation, and then performing laser-induced contact treatment on the electrode precursor is the most advantageous for optimizing solar cell performance. This is because the photoimplantation process also generates a certain amount of heat, so performing photoimplantation before performing laser-induced contact treatment on the electrode precursor can play a passivation role on grain boundaries and defect states.

[0093] Furthermore, in the light injection process, the Fermi level change is adjusted by the temperature and light irradiation intensity, and the total amount and valence of hydrogen are controlled, thereby improving passivation performance. The light injection step involves first heating the electrode precursor, with the peak temperature of the first heating being 180°C to 620°C, and second heating and light irradiation of the electrode precursor, with the peak temperature of the second heating being 80°C to 320°C, and the energy density of the light irradiation being 12 kW / m. 2 ~120kW / m 2 and the wavelength of the light irradiation is a continuous spectral band of 500 nm to 1100 nm. In the light injection step, by controlling the heating conditions and light irradiation conditions within the above ranges, not only is a good passivation effect achieved, but also the occurrence of a situation in which the glass phase material corrodes the first doped silicon-based semiconductor layer due to an excessively high heating temperature can be avoided. Note that, in the light injection step of the present embodiment, a continuous spectral band of wavelengths 500 nm to 1100 nm is irradiated, unlike the single-wavelength laser used in the laser-induced contact treatment step.

[0094] It should be noted that the above-described solar cell manufacturing method is merely an optional embodiment, and the metal-semiconductor contact structure 1 of the present application example can also be obtained by other methods or techniques in the present technical field, and the present application is not limited thereto.

[0095] The above-mentioned metal-semiconductor contact structure 1 may be applied to other types of solar cells. Therefore, as shown in Figure 7, the present embodiment provides a second solar cell, which is an IBC cell: a silicon substrate 100; a first dielectric layer 501, a first doped semiconductor layer 201 doped with an N-type doping element, and a first passivation layer 401, which are sequentially disposed on an N-type conductive region of the non-light-receiving surface of the silicon substrate 100; and a second dielectric layer 502, a second doped semiconductor layer 202 doped with a P-type doping element, and a second passivation layer 402, which are sequentially disposed on a P-type conductive region of the non-light-receiving surface of the silicon substrate 100; a first metal electrode 301 penetrating the first passivation layer 401 of the N-type conductivity region and making ohmic contact with the first doped semiconductor layer 201, thereby forming a first metal-semiconductor contact structure 1 together with the first doped semiconductor layer 201; and a second metal electrode 302 that penetrates the second passivation layer 402 of the P-type conductivity region to make ohmic contact with the second doped semiconductor layer 202, thereby forming a second metal-semiconductor contact structure 1 together with the second doped semiconductor layer 202.

[0096] That is, in the second solar cell, the doped semiconductor layer 200 includes a first doped semiconductor layer 201 and a second doped semiconductor layer 202 having different conductivity types, and the metal electrode 300 includes a first metal electrode 301 and a second metal electrode 302 in contact with the first doped semiconductor layer 201 and the second doped semiconductor layer 202, respectively, thereby forming the aforementioned metal-semiconductor contact structures 1, respectively.

[0097] The silicon substrate 100 has an N-type conductivity or a P-type conductivity. For example, the silicon substrate 100 is an N-type silicon substrate 100. The light-receiving surface of the silicon substrate 100 has a textured structure, for example, a pyramidal textured structure. The textured structure reduces the reflectance of the surface of the silicon substrate 100, contributing to improving the light reflection efficiency within the silicon substrate 100. In addition, other structural film layers may be provided on the light-receiving surface of the silicon substrate 100 according to actual needs. For example, a third passivation layer 403 is provided on the light-receiving surface of the silicon substrate 100.

[0098] The present embodiment further provides a photovoltaic module, which includes the solar cell and packaging structure described in the first aspect, wherein a plurality of solar cells are connected in series and / or in parallel to obtain a solar cell string, and the solar cell string is packaged in the packaging structure to form the above-mentioned photovoltaic module.

[0099] The present invention will be further described below based on more specific examples.

[0100] Example 1 The present embodiment provides a solar cell, an N-type silicon substrate; a P-type diffusion layer, a passivation anti-reflection layer, and a light-receiving surface metal electrode that penetrates the passivation anti-reflection layer and makes ohmic contact with the P-type diffusion layer, which are sequentially provided on the light-receiving surface of the N-type silicon substrate; The non-light-receiving surface includes a dielectric layer, an N-type doped polysilicon layer, a passivation layer, and a non-light-receiving surface metal electrode that penetrates the passivation layer and comes into contact with the N-type doped polysilicon layer, which are provided in this order on the non-light-receiving surface of the N-type silicon substrate.

[0101] A first conductive region is formed at the contact interface between the N-type doped polysilicon layer and the non-light-receiving surface metal electrode, and in the first conductive region: a first conductive structure including a plurality of spherical and / or ellipsoidal first metal particles distributed in a first conductive region, at least a portion of which contacts the N-type doped polysilicon layer; a second conductive structure having a radial shape, at least a portion of which is located on a surface of the first metal particle, the second conductive structure having a radial direction toward the metal electrode; The non-light-receiving surface metal electrode, the first metal particles, and the second conductive feature all have the same elemental silver.

[0102] The particle size of the first metal particles is 20 nm to 360 nm, the particle size of the second metal particles is less than 20 nm, the size of the second conductive features is 0.2 μm to 2 μm, and the ratio of the number of the second conductive features to the first metal particles is 1:4000. In this example, the ratio of the number of the second conductive features to the first metal particles is obtained by measuring and calculating the number of structures corresponding to the first conductive region in any 10 μm × 10 μm area at different positions and taking the average value.

[0103] The above metal-semiconductor contact structure was subjected to a scanning electron microscope examination, and the scanning electron microscope image is shown in Figure 8. The scanning electron microscope examination method for the metal-semiconductor contact structure will now be described.

[0104] Chemical etching involves first heating a 50%-80% nitric acid solution to 60-85°C, immersing the solar cell in the nitric acid solution for 3-10 minutes to remove the metal electrodes, and then rinsing the remaining solution with deionized or distilled water. The cleaned solar cell is then immersed in a 1%-10% hydrofluoric acid solution for 2-5 minutes to remove the remaining glass phase material. Finally, the remaining solution is rinsed with deionized or distilled water to complete the etching process. The conductive structures of the first and second conductive regions in the metal-semiconductor contact structure are exposed and photographed using a scanning electron microscope to obtain corresponding SEM images. It should be understood that the acid concentration, etching temperature, and etching time used in the above etching method can be adaptively adjusted depending on the removal effect, as long as the metal electrodes and glass phase material can be removed. For example, if the acid concentration and / or temperature are increased, the etching time can be shortened appropriately to achieve better metal electrode and glass phase material removal.

[0105] Examples 2 to 7 Except for the ratio of the number of the second conductive constituents to the number of the first metal particles shown in Table 1, Examples 2 to 7 are the same as Example 1.

[0106] Performance test description Open circuit voltage, fill factor, photoelectric conversion efficiency test The HALM test and selection equipment is used to carry out performance tests such as open circuit voltage, fill factor, and photoelectric conversion efficiency. The HALM equipment is a solar simulation device that works in conjunction with electronic loads, data collection and calculation equipment, and is used to measure the electrical performance of photovoltaic elements (including solar cells). The silicon wafers for solar cells to be tested are controlled to a 182mm size, and the calibrated light intensity is 1000±5W / m 2 Let's say.

[0107] Contact Resistance Test A contact resistance test is performed using a contact resistance meter (e.g., TLM-STD manufactured by Millennial Solar Co., Ltd.). First, the characteristic impedance of the transmission path is determined by measuring the current and voltage, and the contact resistance value is calculated based on the characteristic impedance using a formula. The width of the test sample is 6 mm.

[0108] Table 1: Ratio of the quantity of conductive components in each example and results of battery performance tests TIFF2026012625000002.tif80140

[0109] As can be seen from the test results in Table 1, the solar cells of Examples 1 to 5 of the present invention had a series resistance of approximately 1.00 mΩ·cm 2 The photoelectric conversion efficiency reaches approximately 25.1%. It can be seen that the solar cells of Examples 1 to 5 of the present application all have excellent open-circuit voltage and series resistance performance, and high photoelectric conversion efficiency. Therefore, the ratio of the number of the second conductive constituents to the number of the first metal particles is preferably in the range of 1:4000 to 1:1.

[0110] Furthermore, comparing Example 6 and Example 7, when the ratio of the second conductive structure to the first metal particles is outside the range of 1:4000 to 1:1, the battery performance is slightly inferior to that of the preferred example. However, when the ratio is below the preferred range, the series resistance tends to increase, the fill factor decreases, and the photoelectric conversion efficiency decreases slightly. When the ratio exceeds the preferred range, the metal electrode corrodes the base layer more severely, resulting in a decrease in open circuit voltage and a certain decrease in photoelectric conversion efficiency.

[0111] Although the technical aspects disclosed in the examples of the present application have been introduced in detail and specific examples have been used to explain the principles and embodiments of the present application, the explanation of the above examples is merely intended to facilitate understanding of the technical aspects of the examples and the core of the invention. Furthermore, those skilled in the art may make changes to the specific embodiments and application scope based on the spirit of the present application. In light of the above, the contents of this specification should not be construed as limiting the present application.

[0112] Explanation of symbols 100 silicon substrate, 200 doped semiconductor layer, 201 first doped semiconductor layer, 202 second doped semiconductor layer, 300 metal electrode, 301 first metal electrode, 302 second metal electrode, 400 passivation layer, 401 first passivation layer, 402 second passivation layer, 403 third passivation layer, 500 dielectric layer, 501 first dielectric layer, 502 second dielectric layer, 600 P-type diffusion layer, 700 passivation anti-reflection layer, 800 light-receiving surface metal electrode, 1 metal-semiconductor contact structure, 1a first conductive region, 11 first conductive structure, 111 first metal particles, 112 second metal particles, 12 second conductive structure, 121 first sub-structure, 1211 second sub-structure, 1b second conductive region.

Claims

1. A metal-semiconductor contact structure comprising: The metal-semiconductor contact structure comprises: a doped semiconductor layer; a metal electrode in contact with the doped semiconductor layer; a first conductive region at the contact interface between the doped semiconductor layer and the metal electrode; The first conductive region includes: a first conductive configuration comprising a plurality of first metal particles distributed in the first conductive region and having spherical and / or ellipsoidal shapes, at least a portion of the first conductive configuration contacting the doped semiconductor layer; a second conductive configuration, the second conductive configuration being radial, at least a portion of the second conductive configuration being located on a surface of the first metal particle, and the second conductive configuration being radially directed toward the metal electrode; A metal-semiconductor contact structure, wherein the metal electrode, the first metal particles, and the second conductive structure all comprise the same metal element.

2. 2. The metal-semiconductor contact structure of claim 1, wherein the ratio of the quantity of the second conductive components to the quantity of the first metal particles is 1:4000 to 1:

1.

3. 3. The metal-semiconductor contact structure according to claim 2, wherein the ratio of the quantity of said second conductive constituents to said first metal particles is 1:1000 to 1:

20.

4. 2. The metal-semiconductor contact structure according to claim 1, wherein the particle size of said first metal particles is 20 nm to 360 nm.

5. 2. The metal-semiconductor contact structure of claim 1, wherein within any 10 μm×10 μm area of ​​the first conductive region, the number of first metal particles is 200 to 4000, the number of first metal particles having a particle size in the range of 100 nm to 360 nm is 100 to 1500, and the number of first metal particles having a particle size less than 100 nm is 100 to 2500.

6. 2. The metal-semiconductor contact structure of claim 1, wherein the first conductive structure further comprises second metal particles attached to the surfaces of the first metal particles, the first metal particles having a particle size of 20 nm to 360 nm, the second metal particles having a particle size of less than 20 nm, the number of second metal particles attached to one of the first metal particles being 1 to 50, and the second metal particles having the same metal element as the first metal particles.

7. 2. The metal-semiconductor contact structure of claim 1, wherein the size of the second conductive feature is between 0.2 μm and 2 μm.

8. 2. The metal-semiconductor contact structure of claim 1, wherein within any 10 μm×10 μm area of ​​the first conductive region, the number of second conductive features is between 1 and 450, the number of second conductive features whose size is in the range of 1 μm to 2 μm is between 1 and 100, and the number of second conductive features whose size is less than 1 μm is between 1 and 350.

9. 2. The metal-semiconductor contact structure of claim 1, wherein the second conductive structure includes a plurality of stripe-shaped first sub-structures diverging toward the metal electrode, and the number of the first sub-structures is 2 to 20.

10. Any of the first sub-components is composed of a plurality of second sub-components, each of which is shaped like a grain of wheat, and the plurality of second sub-components are combined to form the first sub-component shaped like an ear of wheat; 10. The metal-semiconductor contact structure of claim 9, wherein the second sub-structure has a cross-sectional dimension of 2 to 40 nm.

11. a second conductive region located at an edge of the first conductive region at a contact interface between the doped semiconductor layer and the metal electrode, the second conductive region including an unburned passivation layer, and the first conductive structure and / or the second conductive structure between the unburned passivation layer and the metal electrode; 11. The metal-semiconductor contact structure according to claim 1, wherein, when the second conductive region includes the first conductive configuration, the density of the first conductive configuration in the second conductive region is lower than the density of the first conductive configuration in the first conductive region, and when the second conductive region includes the second conductive configuration, the density of the second conductive configuration in the second conductive region is lower than the density of the second conductive configuration in the first conductive region.

12. The doped semiconductor layer includes any one of a doped amorphous silicon layer, a doped polysilicon layer, a doped microcrystalline silicon layer, or a doped crystalline silicon layer; and / or the doping element in the doped semiconductor layer is an N-type doping element or a P-type doping element; and / or The metal element includes silver, and / or At least a portion of the second conductive structure is located on a surface of the doped semiconductor layer facing the metal electrode. A metal-semiconductor contact structure according to any one of claims 1 to 10.

13. A solar cell, The solar cell comprises: a silicon substrate; a doped semiconductor layer disposed on the silicon substrate; a metal electrode in contact with the doped semiconductor layer; a first conductive region at the contact interface between the doped semiconductor layer and the metal electrode; The first conductive region includes: a first conductive configuration comprising a plurality of first metal particles distributed in the first conductive region and having spherical and / or ellipsoidal shapes, at least a portion of the first conductive configuration contacting the doped semiconductor layer; a second conductive configuration, the second conductive configuration being radial, at least a portion of the second conductive configuration being located on a surface of the first metal particle, and the second conductive configuration being radially directed toward the metal electrode; The solar cell, wherein the metal electrode, the first metal particles, and the second conductive structure all contain the same metal element.

14. 14. The solar cell of claim 13, wherein the ratio of the quantity of the second conductive constituent to the quantity of the first metal particles is 1:4000 to 1:

1.

15. the ratio of the quantity of the second conductive components to the quantity of the first metal particles is between 1:1000 and 1:20; and / or The particle size of the first metal particles is 20 nm to 360 nm, and / or Within any 10 μm×10 μm area of ​​the first conductive region, the number of first metal particles is between 200 and 4000, the number of first metal particles having a particle size in the range of 100 nm to 360 nm is between 100 and 1500, and the number of first metal particles having a particle size less than 100 nm is between 100 and 2500; and / or The first conductive structure further comprises second metal particles attached to the surfaces of the first metal particles, wherein the particle diameter of the first metal particles is 20 nm to 360 nm, the particle diameter of the second metal particles is less than 20 nm, the number of second metal particles attached to one of the first metal particles is 1 to 50, and the second metal particles have the same metal element as the first metal particles; and / or the size of the second conductive features is between 0.2 μm and 2 μm; and / or Within any 10 μm×10 μm area of ​​the first conductive region, the number of second conductive features is between 1 and 450, the number of second conductive features whose size is in the range of 1 μm to 2 μm is between 1 and 100, and the number of second conductive features whose size is less than 1 μm is between 1 and 350; and / or the second conductive structure includes a plurality of stripe-shaped first sub-structures diverging toward the metal electrode, the number of the first sub-structures being 2 to 20; Any of the first sub-components is composed of a plurality of second sub-components, each of which has the shape of a grain of wheat, and the plurality of second sub-components combine to form the first sub-component having the shape of an ear of wheat, and the cross-sectional dimension of the second sub-components is 2 to 40 nm; and / or 14. The solar cell of claim 13, further comprising a second conductive region located at an edge of the first conductive region at a contact interface between the doped semiconductor layer and the metal electrode, the second conductive region including an unburned passivation layer, the first conductive configuration and / or the second conductive configuration being present between the unburned passivation layer and the metal electrode, wherein when the second conductive region includes the first conductive configuration, the density of the first conductive configuration in the second conductive region is lower than the density of the first conductive configuration in the first conductive region, and when the second conductive region includes the second conductive configuration, the density of the second conductive configuration in the second conductive region is lower than the density of the second conductive configuration in the first conductive region.

16. The solar cell further comprises a dielectric layer disposed between the silicon substrate and the doped semiconductor layer; and / or 14. The solar cell of claim 13, further comprising a passivation layer disposed on a side of the doped semiconductor opposite the silicon substrate.

17. the doped semiconductor layer includes an N-type doped semiconductor layer and a P-type doped semiconductor layer, the N-type doped semiconductor layer and the P-type doped semiconductor layer are alternately arranged on the non-light-receiving surface of the silicon substrate in an interdigitated pattern, and a separation region is provided between the N-type doped semiconductor layer and the P-type doped semiconductor layer; 14. The solar cell of claim 13, wherein the metal electrodes include a first metal electrode and a second metal electrode, the first metal electrode being in contact with the N-type doped semiconductor layer, and the second metal electrode being in contact with the P-type doped semiconductor layer.

18. 1. A photovoltaic module comprising: The solar cells according to any one of claims 13 to 17, which are connected in series and / or in parallel to form a solar cell string; a packaging structure for packaging the solar cell string therein; A photovoltaic module characterized by:

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