Processing apparatus and processing method

Abstract

To provide a technique capable of achieving both reduction in thermal history and improvement in reactivity of a processing gas.SOLUTION: According to an aspect of the present disclosure, there is provided a processing apparatus including a processing container configured to form a processing space in which a plurality of substrates is processed, a plasma generation part configured to communicate with the processing space and form a plasma generation space in which plasma is generated, a first gas nozzle configured to supply a first processing gas to the processing space, and a second gas nozzle configured to supply a second processing gas to the plasma generation space, wherein the second gas nozzle includes a gas heating part configured to heat the second processing gas within the second gas nozzle.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to a processing device and a processing method. [Background technology]

[0002] A technology has been disclosed in which a silicon oxide film formed on a substrate is removed by alternately repeating a step of supplying a fluorine-containing gas to the substrate and a step of exposing the substrate to plasma of a gas containing ammonia multiple times (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2020-53615 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique that can achieve both a reduction in thermal history and an improvement in the reactivity of the processing gas. [Means for solving the problem]

[0005] A processing apparatus according to one aspect of the present disclosure includes a processing vessel forming a processing space for processing multiple substrates, a plasma generation unit communicating with the processing space and forming a plasma generation space in which plasma is generated, a first gas nozzle supplying a first processing gas to the processing space, and a second gas nozzle supplying a second processing gas to the plasma generation space, the second gas nozzle having a gas heating unit for heating the second processing gas within the second gas nozzle. [Effects of the Invention]

[0006] According to the present disclosure, it is possible to achieve both a reduction in thermal history and an improvement in the reactivity of the processing gas. [Brief explanation of the drawings]

[0007] [Figure 1] 1 is a vertical cross-sectional view showing a processing apparatus according to an embodiment. [Figure 2] 1 is a horizontal cross-sectional view showing a processing apparatus according to an embodiment. [Figure 3] FIG. 2 is a cross-sectional view showing an example of a gas nozzle included in the processing apparatus according to the embodiment. [Figure 4] 4 is a timing chart showing a processing method according to a first example of an embodiment. [Figure 5] 10 is a timing chart showing a processing method according to a second example of the embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, non-limiting exemplary embodiments of the present disclosure will be described with reference to the accompanying drawings. In all the accompanying drawings, the same or corresponding reference numerals are used to designate the same or corresponding members or components, and redundant descriptions will be omitted.

[0009] [Processing device] A processing apparatus 100 according to an embodiment will be described with reference to Figures 1 and 2. Figure 1 is a vertical cross-sectional view showing the processing apparatus 100 according to an embodiment. Figure 2 is a horizontal cross-sectional view showing the processing apparatus 100 according to an embodiment.

[0010] The processing apparatus 100 includes a processing vessel 1, a gas supply unit 20, a plasma generation unit 30, an exhaust unit 40, a vessel heating unit 50, and a control unit 90.

[0011] The processing vessel 1 defines a processing space A1 therein. In the processing space A1, various processes are performed on a plurality of substrates W. The various processes include, for example, film formation processes. The various processes may also include etching processes. The processing vessel 1 has a vertical, cylindrical shape with a ceiling and an open bottom end. The processing vessel 1 is made of, for example, quartz. A ceiling plate 2 is provided near the upper end of the processing vessel 1, and the area below the ceiling plate 2 is sealed. The ceiling plate 2 is made of, for example, quartz. A cylindrical, metallic manifold 3 is connected to the opening at the bottom end of the processing vessel 1 via a sealing member 4. The sealing member 4 is, for example, an O-ring.

[0012] The manifold 3 supports the lower end of the processing vessel 1. The boat 5 is inserted into the processing vessel 1 from below the manifold 3. The boat 5 holds an array of multiple (e.g., 25 to 150) substrates W. The boat 5 holds multiple (e.g., 25 to 150) substrates W approximately horizontally with spacing between them in the vertical direction. The boat 5 is made of, for example, quartz. The boat 5 has, for example, three support columns 6, and the multiple substrates W are supported by grooves formed in the support columns 6.

[0013] The boat 5 is placed on a rotating table 8 via a heat-insulating tube 7. The heat-insulating tube 7 is made of, for example, quartz. The heat-insulating tube 7 suppresses heat radiation from the opening at the lower end of the manifold 3. The rotating table 8 is supported on a rotating shaft 10. The opening at the lower end of the manifold 3 is opened and closed by a lid 9. The lid 9 is made of, for example, a metal material such as stainless steel. The rotating shaft 10 passes through the lid 9.

[0014] A magnetic fluid seal 11 is provided at the penetration portion of the rotating shaft 10. The magnetic fluid seal 11 airtightly seals the rotating shaft 10 and rotatably supports it. A seal member 12 is provided between the periphery of the lid 9 and the lower end of the manifold 3 to maintain airtightness inside the processing vessel 1. The seal member 12 is, for example, an O-ring.

[0015] The rotating shaft 10 is attached to the tip of an arm 13 supported by an elevator mechanism such as a boat elevator. When the arm 13 moves up and down, the boat 5, the heat-retaining cylinder 7, the turntable 8, and the lid 9 move up and down together with the rotating shaft, and are inserted into and removed from the processing vessel 1.

[0016] The gas supply unit 20 supplies various gases into the processing chamber 1. The gas supply unit 20 includes, for example, a gas nozzle 21, a gas nozzle 22, and a gas nozzle 23. The gas nozzle 21 is an example of a first gas nozzle, and the gas nozzle 22 is an example of a second gas nozzle. The gas nozzle 21, the gas nozzle 22, and the gas nozzle 23 are made of, for example, quartz. The gas supply unit 20 may further include another gas nozzle.

[0017] The gas nozzle 21 has an L-shape that penetrates the sidewall of the manifold 3 inward, bends upward, and extends vertically. The vertical portion of the gas nozzle 21 is provided in the processing space A1. The vertical portion of the gas nozzle 21 has multiple gas holes 21a. The multiple gas holes 21a are provided at predetermined intervals along the extension direction of the gas nozzle 21. Each gas hole 21a is oriented toward the center CT of the processing vessel 1, for example.

[0018] A supply path L1 is connected to the gas nozzle 21. A first process gas supply source G1, a mass flow controller F1, and an on-off valve V1 are provided on the supply path L1, in that order from upstream to downstream in the gas flow direction. The supply timing of the first process gas from the supply source G1 is controlled by the on-off valve V1, and the flow rate is adjusted to a predetermined value by the mass flow controller F1. The first process gas flows from the supply path L1 into the gas nozzle 21 and is ejected horizontally from multiple gas holes 21a toward the center CT of the process vessel 1.

[0019] The gas nozzle 22 has an L-shape that penetrates the sidewall of the manifold 3 inward, bends upward, and extends vertically. The vertical portion of the gas nozzle 22 is provided in the plasma generation space A2, which will be described later. The vertical portion of the gas nozzle 22 is provided with a plurality of gas holes 22a. The plurality of gas holes 22a are provided at predetermined intervals along the extension direction of the gas nozzle 22. Each gas hole 22a is oriented toward the center CT of the processing vessel 1, for example.

[0020] A supply path L2 is connected to the gas nozzle 22. A second process gas supply source G2, a mass flow controller F2, and an on-off valve V2 are provided on the supply path L2, in this order from upstream to downstream in the gas flow direction. The supply timing of the second process gas from the supply source G2 is controlled by the on-off valve V2, and the flow rate is adjusted to a predetermined value by the mass flow controller F2. The second process gas flows from the supply path L2 into the gas nozzle 22 and is ejected horizontally from multiple gas holes 22a toward the center CT of the process vessel 1.

[0021] The gas nozzle 22 is configured to be able to heat the second process gas within the gas nozzle 22. The gas nozzle 22 will be described in detail later.

[0022] The gas nozzle 23 has a straight pipe shape that extends horizontally through the sidewall of the manifold 3. The gas nozzle 23 is connected to an inert gas supply source G3. The tip of the gas nozzle 23 is installed inside the processing vessel 1. The tip of the gas nozzle 23 is open, and the inert gas is supplied into the processing vessel 1 through the opening. The inert gas is, for example, nitrogen (N2). The inert gas may also be argon (Ar).

[0023] The plasma generating unit 30 is provided in a part of the sidewall of the processing vessel 1. The plasma generating unit 30 generates plasma from the second processing gas supplied from the gas nozzle 22. The plasma generating unit 30 includes a plasma partition wall 32, a pair of plasma electrodes 33, a power supply line 34, an RF power supply 35, and an insulating protective cover 36.

[0024] The plasma compartment wall 32 is airtightly welded to the outer wall of the processing vessel 1. The plasma compartment wall 32 is made of, for example, quartz. The plasma compartment wall 32 has a concave cross section and covers an opening 31 formed in the side wall of the processing vessel 1. The opening 31 is formed elongated in the vertical direction so that it can cover all of the substrates W supported on the boat 5 in the vertical direction. The plasma compartment wall 32 forms a plasma generation space A2. The plasma generation space A2 is in communication with the processing space A1. A gas nozzle 22 is provided in the plasma generation space A2. In the plasma generation space A2, plasma is generated from a second processing gas supplied from the gas nozzle 22.

[0025] The pair of plasma electrodes 33 each have an elongated shape and are arranged facing each other in the vertical direction on the outer surfaces of both sides of the plasma compartment wall 32. A power supply line 34 is connected to the lower end of each plasma electrode 33.

[0026] The power supply line 34 electrically connects each plasma electrode 33 to the RF power supply 35. For example, one end of the power supply line 34 is connected to the lower end, which is the side of the short side of each plasma electrode 33, and the other end is connected to the RF power supply 35.

[0027] The RF power supply 35 is electrically connected to the lower end of each plasma electrode 33 via a power supply line 34. The RF power supply 35 supplies RF power of, for example, 13.56 MHz to the pair of plasma electrodes 33. This applies the RF power to the plasma generation space P defined by the plasma partition wall 32.

[0028] The insulating protective cover 36 is attached to the outside of the plasma compartment wall 32 so as to cover the plasma compartment wall 32. A coolant passage (not shown) is provided inside the insulating protective cover 36. The plasma electrode 33 is cooled by flowing a coolant such as cooled nitrogen through the coolant passage. A shield (not shown) may be provided between the plasma electrode 33 and the insulating protective cover 36 so as to cover the plasma electrode 33. The shield is made of a good conductor such as metal and is electrically grounded.

[0029] The exhaust unit 40 has an exhaust port 41. The exhaust port 41 is provided in a portion of the sidewall of the processing vessel 1 opposite the opening 31. The exhaust port 41 is elongated in the vertical direction to correspond to the boat 5. A cover member 42 having a U-shaped cross section is attached to the portion of the processing vessel 1 corresponding to the exhaust port 41 so as to cover the exhaust port 41. The cover member 42 extends upward along the sidewall of the processing vessel 1. An exhaust pipe 43 is connected to the lower part of the cover member 42. A pressure adjustment valve 44 and a vacuum pump 45 are provided in the exhaust pipe 43, in this order from upstream to downstream in the gas flow direction. The exhaust unit 40 operates the pressure adjustment valve 44 and the vacuum pump 45 under the control of the control unit 90 to suck gas from the processing vessel 1 into the vacuum pump 45, while adjusting the pressure in the processing vessel 1 using the pressure adjustment valve 44.

[0030] The vessel heating unit 50 includes a heater 51. The heater 51 has a cylindrical shape that surrounds the processing vessel 1 on the radially outer side of the processing vessel 1. The heater 51 heats the entire periphery of the processing vessel 1, thereby heating the processing vessel 1 and each substrate W accommodated in the processing vessel 1.

[0031] The control unit 90 is an electronic circuit such as a CPU (Central Processing Unit), FPGA (Field Programmable Gate Array), ASIC (Application Specific Integrated Circuit), etc. The control unit 90 executes various control operations described in this specification by executing instruction codes stored in a memory or by being a circuit designed for a specific application.

[0032] [Gas nozzle] An example of the gas nozzle 22 included in the processing apparatus 100 will be described with reference to Fig. 3. Fig. 3 is a cross-sectional view showing an example of the gas nozzle 22 included in the processing apparatus 100 according to the embodiment.

[0033] The gas nozzle 22 has an inner tube 210, an outer tube 220, and an adapter 230. The outer tube 220 and the adapter 230 are connected via a seal 235. The inner tube 210 is disposed inside the outer tube 220 and the adapter 230. An alumina core 201, a heating element 202, and a flexible cable 203 are disposed inside the inner tube 210. The heating element 202 is wound around the alumina core 201. The flexible cable 203 connects the heating element 202 to a heater power supply (not shown). The heater power supply supplies power to the heating element 202 via the flexible cable 203. This causes the heating element 202 to generate heat, thereby heating the alumina core 201.

[0034] The second process gas supplied from the supply port 231 of the adapter 230 passes through the space between the inner tube 210 and the adapter 230 and the space between the inner tube 210 and the outer tube 220, and is discharged from the gas holes 22a. Furthermore, when power is supplied from the heater power supply to the heating element 202, the second process gas is heated, and the heated second process gas is discharged from the gas holes 22a. Thus, the gas nozzle 22 includes the outer tube 220 through which the second process gas flows, and a gas heating unit disposed within the outer tube 220 for heating the second process gas flowing through the outer tube 220. The gas heating unit includes an alumina core 201 and a heating element 202. The gas heating unit is disposed within the outer tube 220, which is disposed in the plasma generation space P.

[0035] According to the processing apparatus 100 of the embodiment, the gas nozzle 22 has a gas heater that heats the second process gas within the gas nozzle 22, and the gas nozzle 22 is provided in the plasma generation space A2. In this case, the second process gas is activated within the gas nozzle 22 by heating with the gas heater, and the activated second process gas is supplied to the plasma generation space A2, where plasma can be generated from the activated second process gas. This improves the reactivity of the second process gas. Furthermore, since the second process gas within the gas nozzle 22 can be heated by a gas heater provided separately from the container heating unit 50, the set temperature of the container heating unit 50 can be lowered. This reduces the thermal history of the substrate W processed in the processing space A1. As such, the processing apparatus 100 of the embodiment achieves both a reduction in the thermal history and an improvement in the reactivity of the second process gas.

[0036] [Processing gas] The first and second process gases used in the process apparatus 100 will be described.

[0037] For example, when the process performed in the processing space A1 of the processing apparatus 100 is a film formation process, the first process gas may be a source gas, and the second process gas may be a first reactive gas that reacts with the source gas to generate a reaction product. The source gas may be, but is not limited to, a silicon-containing gas such as dichlorosilane (DCS). The first reactive gas may be, but is not limited to, a nitriding gas such as ammonia (NH) or an oxidizing gas such as oxygen (O).

[0038] For example, if the process performed in the processing space A1 of the processing apparatus 100 is an etching process, the first process gas may be an etching gas, and the second process gas may be a second reactive gas that promotes etching by the etching gas. The type of the etching gas is not particularly limited, but may be, for example, a fluorine-containing gas such as hydrogen fluoride (HF). The type of the second reactive gas is not particularly limited, but may be, for example, ammonia.

[0039] [Processing method] (Example 1) Referring to Fig. 4, a method for forming a silicon nitride film by atomic layer deposition (ALD) in which dichlorosilane and ammonia are not simultaneously supplied will be described as a processing method according to a first example of an embodiment. Dichlorosilane is an example of a first processing gas. Ammonia is an example of a second processing gas. Fig. 4 is a timing chart showing the processing method according to the first example of an embodiment. The processing method according to the first example of an embodiment is performed under the control of a control unit 90.

[0040] First, the control unit 90 raises the arm 13 to load the boat 5 holding the substrates W into the processing vessel 1, and then airtightly closes the opening at the bottom of the processing vessel 1 with the lid 9. Next, the control unit 90 controls the exhaust unit 40 so that the pressure inside the processing vessel 1 is set to a set value, and controls the vessel heating unit 50 so that the temperature inside the processing vessel 1 is set to a desired value.

[0041] Next, the control unit 90 executes a film formation process in the processing chamber 1 to form a silicon nitride film on the surface of each substrate W by ALD, in which dichlorosilane and ammonia are not simultaneously supplied.

[0042] At time t11, the gas nozzle 21 starts supplying dichlorosilane to the processing space A1. As a result, dichlorosilane is adsorbed onto the surface of each substrate W. At time t11, the gas heater starts heating the gas nozzle 22. The set temperature of the gas heater may be higher than the set temperature of the container heater 50, for example. At time t11, the gas nozzle 23 starts supplying nitrogen to the processing space A1.

[0043] At time t12, the gas nozzle 21 stops supplying dichlorosilane to the processing space A1. The gas heater continues to heat the gas nozzle 22 after time t12. The gas heater continues to heat the gas nozzle 22 until, for example, the film formation process is completed. The gas nozzle 23 continues to supply nitrogen to the processing space A1 after time t12. The gas nozzle 23 continues to supply nitrogen to the processing space A1 until, for example, the film formation process is completed. During the period from time t12 to time t13, the gas nozzle 23 continues to supply nitrogen to the processing space A1. As a result, dichlorosilane remaining in the processing space A1 is replaced with nitrogen. That is, the processing space A1 is purged.

[0044] At time t13, the gas nozzle 22 starts supplying ammonia to the plasma generation space A2. At this time, since the gas heater continues to heat the gas nozzle 22, the ammonia is heated in the gas nozzle 22 and supplied to the plasma generation space A2. At time t13, the plasma generation unit 30 starts supplying RF power. As a result, plasma is generated from the heated ammonia in the plasma generation space A2. Active species such as radicals contained in the plasma are supplied from the plasma generation space A2 to the processing space A1. As a result, dichlorosilane adsorbed on the surface of each substrate W is nitrided.

[0045] At time t14, the gas nozzle 22 stops supplying ammonia to the plasma generation space A2. At time t14, the plasma generation unit 30 stops supplying RF power. From time t14 to time t15, the gas nozzle 23 continues to supply nitrogen to the processing space A1. As a result, the ammonia remaining in the processing space A1 is replaced with nitrogen. In other words, the processing space A1 is purged.

[0046] Next, the process from time t11 to time t15 is defined as an ALD cycle, and the ALD cycle is repeated multiple times, thereby forming a silicon nitride film on the surface of each of the substrates W held in the boat 5.

[0047] Next, the control unit 90 increases the pressure inside the processing vessel 1 to atmospheric pressure, and decreases the temperature inside the processing vessel 1 to the unloading temperature, and then lowers the arm 13 to unload the boat 5 from the processing vessel 1. This completes the film formation process on the multiple substrates W.

[0048] According to the processing method of the first example embodiment, ammonia is activated in the gas nozzle 22 by heating using the gas heating unit, and the activated ammonia is supplied to the plasma generation space A2, where plasma is generated from the activated ammonia. This improves the reactivity of the ammonia. Furthermore, since the ammonia in the gas nozzle 22 can be heated by a gas heating unit provided separately from the container heating unit 50, the set temperature of the container heating unit 50 can be lowered. This reduces the thermal history of the substrate W processed in the processing space A1. Thus, according to the processing method of the first example embodiment, it is possible to achieve both a reduction in the thermal history and an improvement in the reactivity of ammonia.

[0049] 4, the gas nozzle 22 is heated by the gas heater from time t11 until the film formation process is completed, but the timing at which the gas heater heats the gas nozzle 22 is not limited to this. For example, the gas heater may heat the gas nozzle 22 at the same timing as the gas nozzle 22 supplies ammonia to the plasma generation space A2. That is, the gas heater may heat the gas nozzle 22 during the period from time t13 to time t14. For example, the gas heater may start heating the gas nozzle 22 before time t11.

[0050] (Example 2) Referring to Fig. 5, a processing method according to a second example of the embodiment will be described, which is a method for etching a boron nitride (BN) film by atomic layer etching (ALE) in which hydrogen fluoride and ammonia are supplied non-simultaneously. Hydrogen fluoride is an example of a first processing gas. Ammonia is an example of a second processing gas. Fig. 5 is a timing chart showing the processing method according to the second example of the embodiment. The processing method according to the second example of the embodiment is performed under the control of a control unit 90.

[0051] First, the control unit 90 raises the arm 13 to load the boat 5 holding multiple substrates W into the processing vessel 1, and then airtightly closes the opening at the bottom of the processing vessel 1 with the lid 9. Each substrate W has, for example, a boron nitride film on its surface. Next, the control unit 90 controls the exhaust unit 40 to set the pressure inside the processing vessel 1 to a set value, and controls the vessel heating unit 50 to set the temperature inside the processing vessel 1 to a desired value.

[0052] Next, the control unit 90 performs an etching process in the processing chamber 1 to etch the boron nitride film on the surface of each substrate W by ALE, which non-simultaneously supplies hydrogen fluoride and ammonia.

[0053] At time t21, the gas nozzle 21 starts supplying hydrogen fluoride to the processing space A1. As a result, the surface layer of the boron nitride film formed on the surface of each substrate W is fluorinated, forming a fluoride layer. At time t21, the gas heater starts heating the gas nozzle 22. The set temperature of the gas heater may be higher than the set temperature of the container heater 50, for example. At time t21, the gas nozzle 23 starts supplying nitrogen to the processing space A1.

[0054] At time t22, the gas nozzle 21 stops supplying hydrogen fluoride to the processing space A1. Heating of the gas nozzle 22 by the gas heater continues after time t22. Heating of the gas nozzle 22 by the gas heater continues until, for example, the etching process is completed. Supply of nitrogen from the gas nozzle 23 to the processing space A1 continues after time t22. Supply of nitrogen from the gas nozzle 23 to the processing space A1 continues until, for example, the etching process is completed. During the period from time t22 to time t23, supply of nitrogen from the gas nozzle 23 to the processing space A1 continues. As a result, hydrogen fluoride remaining in the processing space A1 is replaced with nitrogen. That is, the processing space A1 is purged.

[0055] At time t23, the gas nozzle 22 starts supplying ammonia to the plasma generation space A2. At this time, since the gas nozzle 22 continues to be heated by the gas heating unit, the ammonia is heated in the gas nozzle 22 and supplied to the plasma generation space A2. At time t23, the plasma generation unit 30 starts supplying RF power. As a result, plasma is generated from the heated ammonia in the plasma generation space A2. Active species such as radicals contained in the plasma are supplied from the plasma generation space A2 to the processing space A1. When the active species are supplied to the fluoride layer, the fluoride layer is converted into ammonium borofluoride (NH x The ammonium borofluoride is transformed into ammonium fluoride (BF), etc. The ammonium borofluoride sublimes and leaves the surface of the substrate W. As a result, the fluoride layer is removed from the surface of the substrate W, and the boron nitride film is etched.

[0056] At time t24, the gas nozzle 22 stops supplying ammonia to the plasma generation space A2. At time t24, the plasma generation unit 30 stops supplying RF power. From time t24 to time t25, nitrogen continues to be supplied from the gas nozzle 23 to the processing space A1. As a result, ammonia, ammonium borofluoride, etc. remaining in the processing space A1 are replaced with nitrogen. In other words, the processing space A1 is purged.

[0057] Next, the process from time t21 to time t25 is defined as an ALE cycle, and the ALE cycle is repeated multiple times, thereby etching the boron nitride film formed on the surface of each substrate W held in the boat 5.

[0058] Next, the control unit 90 increases the pressure inside the processing vessel 1 to atmospheric pressure, and decreases the temperature inside the processing vessel 1 to the unloading temperature, and then lowers the arm 13 to unload the boat 5 from the processing vessel 1. This completes the etching process for the multiple substrates W.

[0059] According to the processing method of the second example of the embodiment, ammonia is activated in the gas nozzle 22 by heating with the gas heating unit, and the activated ammonia is supplied to the plasma generation space A2, where plasma is generated from the activated ammonia. This improves the reactivity of the ammonia. Furthermore, since the ammonia in the gas nozzle 22 can be heated by a gas heating unit provided separately from the container heating unit 50, the set temperature of the container heating unit 50 can be lowered. This reduces the thermal history of the substrate W processed in the processing space A1. Thus, according to the processing method of the second example of the embodiment, it is possible to achieve both a reduction in the thermal history and an improvement in the reactivity of ammonia.

[0060] 5, the gas nozzle 22 is heated by the gas heater from time t21 until the etching process is completed, but the timing at which the gas heater heats the gas nozzle 22 is not limited to this. For example, the gas heater may heat the gas nozzle 22 at the same timing as the gas nozzle 22 supplies ammonia to the plasma generation space A2. That is, the gas heater may heat the gas nozzle 22 during the period from time t23 to time t24. For example, the gas heater may start heating the gas nozzle 22 before time t21.

[0061] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive, and the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims.

[0062] In the above embodiment, the processing apparatus is described as an apparatus using capacitively coupled plasma (CCP), but is not limited to this. For example, the processing apparatus may be an apparatus using inductively coupled plasma (ICP) or microwave discharge plasma. [Explanation of symbols]

[0063] 1. Processing container 21 Gas nozzle 22 Gas nozzle 100 Processing equipment 201 Alumina Core 202 Heating element A1 Processing space A2 Plasma generation space W substrate

Claims

1. a processing chamber forming a processing space for processing a plurality of substrates; a plasma generating section that communicates with the processing space and forms a plasma generating space in which plasma is generated; a first gas nozzle for supplying a first processing gas into the processing space; a second gas nozzle for supplying a second processing gas to the plasma generating space; Equipped with the second gas nozzle has a gas heating portion that heats the second process gas within the second gas nozzle. Processing equipment.

2. A control unit is provided, The control unit Loading a plurality of the substrates into the processing space; the first gas nozzle supplies the first process gas to the processing space; the gas heating unit heating the second process gas within the second gas nozzle; the second gas nozzle supplies the heated second processing gas to the plasma generation space; the plasma generating unit generates the plasma from the second processing gas supplied to the plasma generating space; Control to execute The processing device of claim 1 .

3. a container heating unit provided around the processing container and configured to heat the inside of the processing container; The processing device of claim 2 .

4. The set temperature of the gas heating unit is higher than the set temperature of the container heating unit. The processing device according to claim 3 .

5. the first process gas is a source gas; the second process gas is a first reaction gas that reacts with the source gas to generate a reaction product; The processing device according to any one of claims 1 to 4.

6. the source gas is a silicon-containing gas, The first reactive gas is a nitriding gas or an oxidizing gas. The processing device according to claim 5 .

7. the first process gas is an etching gas; the second process gas is a second reactive gas that promotes etching by the etching gas; The processing device according to any one of claims 1 to 4.

8. the etching gas is hydrogen fluoride; the second reactive gas is ammonia; The processing device of claim 7 .

9. Loading a plurality of substrates into a processing space; supplying a first processing gas into the processing space from a first gas nozzle; supplying a second processing gas from a second gas nozzle into a plasma generating space communicating with the processing space; heating the second process gas in the second gas nozzle by a gas heating unit included in the second gas nozzle; generating plasma from the second processing gas supplied to the plasma generating space; A processing method comprising:

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