Contact probe and method of manufacturing semiconductor device

Abstract

To provide a technique capable of performing a stable electrical characteristic inspection which is hardly affected by the inclination of an electrode terminal even when the electrode terminal of a semiconductor device is inclined.SOLUTION: A contact probe 100 comes into contact with an electrode terminal 1 of a semiconductor device. The contact probe 100 includes a probe body 3 having a tip part side 3a positioned on the terminal 1 side and a base part side 3a projecting to the opposite side of the terminal 1 from the tip part side 3b, and a sleeve 5 having a recessed part side 3b for storing the base part side 5a of the probe body 3 so that the probe body 3 can be rocked in a first direction or all directions.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to a contact probe and a method for manufacturing a semiconductor device. [Background technology]

[0002] Conventionally, electrical characteristics testing of semiconductor devices is performed by bringing contact probes into contact with electrode terminals of the semiconductor device and passing a current from the contact probes to the electrode terminals (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2010-217085 Summary of the Invention [Problem to be solved by the invention]

[0004] However, in the technology described in Patent Document 1, the electrode terminal has a flat plate shape and is a bent product of a metal plate, so the electrode terminal is prone to tilt due to insufficient bending, etc. When the electrode terminal is tilted, there are locations where the contact probe and the electrode terminal make point contact, preventing a normal current from flowing from the contact probe to the electrode terminal, reducing inspection accuracy, and there is a possibility that discharge or melting due to Joule heat will occur at the point contact.

[0005] Therefore, an object of the present disclosure is to provide a technology that enables stable electrical characteristic testing to be performed that is less affected by the tilt of the electrode terminals, even when the electrode terminals of a semiconductor device are tilted. [Means for solving the problem]

[0006] The contact probe according to the present disclosure is a contact probe that comes into contact with an electrode terminal of a semiconductor device, and includes a probe body having a tip portion located on the electrode terminal side and a base portion that protrudes from the tip portion to the side opposite the electrode terminal, and a sleeve having a recess that accommodates the base portion of the probe body so that the probe body can swing in a first direction or in all directions. [Effects of the Invention]

[0007] According to the present disclosure, when an electrode terminal of a semiconductor device is tilted, the probe body swings in accordance with the tilt of the electrode terminal, thereby preventing point contact between the tip of the probe body and the electrode terminal, thereby enabling stable electrical characteristic testing that is less affected by the tilt of the electrode terminal. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. 1 is a front view of a contact probe according to a first embodiment. [Figure 2] 1 is a side view of a contact probe according to a first embodiment. FIG. [Figure 3] 4 is a flowchart showing a semiconductor device inspection method, which is part of a semiconductor device manufacturing method according to the first embodiment. [Figure 4] 10 is a side view showing a state in which the tip of the probe main body is in contact with an inclined electrode terminal in the first embodiment. FIG. [Figure 5] FIG. 10 is a front view of a contact probe according to a second embodiment. [Figure 6] FIG. 11 is a front view of a contact probe according to a third embodiment. [Figure 7] FIG. 10 is a front view of a contact probe according to a fourth embodiment. [Figure 8] FIG. 11 is a side view of a contact probe and a power transmission line according to a fifth embodiment. [Figure 9] FIG. 10 is a side view showing a state in which the tip of a contact probe comes into contact with an inclined electrode terminal in the related art. DETAILED DESCRIPTION OF THE INVENTION

[0009] <First Embodiment> The first embodiment will be described below with reference to the drawings. Fig. 1 is a front view of contact probe 100 according to the first embodiment. Fig. 2 is a side view of contact probe 100 according to the first embodiment.

[0010] As shown in FIGS. 1 and 2, the contact probe 100 includes a probe body 3, a sleeve 5, and a shaft 4.

[0011] The probe body 3 is made of a copper alloy with a Pd-Co or Au-Co plating on the surface, and has a tip portion 3a and a base portion 3b.

[0012] The tip portion 3a is disposed on the lower side (electrode terminal 1 side) so as to be able to come into contact with the electrode terminal 1 (see FIG. 4) of a semiconductor device (not shown). The entire tip portion 3a is formed in a cylindrical shape. The outer peripheral edge of the tip portion 3a is chamfered. Specifically, the lower end side of the tip portion 3a, which is the side that comes into contact with the electrode terminal 1, is formed in a C-chamfered shape or an R-chamfered shape.

[0013] The base portion 3b is formed in a cylindrical shape with a smaller diameter than the tip portion 3a, and protrudes upward (toward the opposite side from the electrode terminal 1) from the tip portion 3a.

[0014] The probe body 3 may be made of any metal, and as mentioned above, by using a copper alloy with Pd-Co or Au-Co plating on the surface, it is possible to improve wear resistance and prevent oxidation (prevent an increase in contact resistance). Also, the same effect can be obtained by using Ni plating instead of Pd-Co or Au-Co plating.

[0015] The sleeve 5 is made of metal and formed into a cylindrical shape. A pair of protrusions 5b protruding downward is provided at the lower end of the sleeve 5. An upwardly recessed recess 5a is formed between the pair of protrusions 5b. The base 3b of the probe main body 3 is housed in the recess 5a so that the probe main body 3 can swing in a first direction. Here, the first direction is the same direction as the tilt direction of the electrode terminal 1. For example, it is the left-right direction in FIG. 2.

[0016] The shaft 4 is made of metal, connects the pair of protrusions 5b of the sleeve 5 with the base 3b of the probe main body 3, with the base 3b of the probe main body 3 being disposed between the pair of protrusions 5b, and functions as an oscillation axis for the probe main body 3. With this structure, the probe main body 3 oscillates in a first direction around the shaft 4, following the inclination of the electrode terminal 1.

[0017] Since the shaft 4 is detachable, the probe main body 3 can be replaced depending on the size of the electrode terminal 1.

[0018] Next, a description will be given of a method for inspecting a semiconductor device using contact probe 100. Fig. 3 is a flowchart showing a method for inspecting a semiconductor device, which is part of a method for manufacturing a semiconductor device according to the first embodiment.

[0019] As shown in FIG. 3, first, in step S1, a preparation process is performed in which a semiconductor device having a flat electrode terminal 1 is prepared. Next, in step S2, a contact process is performed in which a contact probe 100 is lowered and the tip 3a of the probe body 3 is brought into contact with the electrode terminal 1. Finally, in step S3, an inspection process is performed in which a current is passed from the contacted probe body 3 to the electrode terminal 1 to perform an electrical characteristic inspection, thereby determining whether the semiconductor device is good or bad. Here, in the first embodiment, the current is passed to the probe body 3 via the sleeve 5.

[0020] Next, the effects of embodiment 1 will be described in comparison with the related art. Fig. 4 is a side view showing a state in which the tip of probe main body 3 comes into contact with tilted electrode terminal 1 in embodiment 1. Fig. 9 is a side view showing a state in which the tip of contact probe 101 comes into contact with tilted electrode terminal 1 in the related art.

[0021] 9, in the related art, the electrode terminal 1 has a flat plate shape and is a bent product of a metal plate, so that the electrode terminal 1 is prone to tilt due to insufficient bending, etc. When the electrode terminal 1 is tilted, there are locations where the contact between the contact probe 101 and the electrode terminal 1 becomes point contact, which prevents a normal current from flowing from the contact probe 101 to the electrode terminal 1, reducing inspection accuracy, and there is a possibility that discharge or melting due to Joule heat will occur at the point contact location.

[0022] In contrast, in embodiment 1, contact probe 100 includes a probe body 3 having a tip portion 3a located on the electrode terminal 1 side and a base portion 3b protruding from tip portion 3a to the side opposite electrode terminal 1, and a sleeve 5 having a recess 5a that accommodates base portion 3b of probe body 3 so that probe body 3 can swing in a first direction.

[0023] More specifically, the sleeve 5 further has a pair of protrusions 5b that protrude from the lower end toward the tip 3a of the probe main body 3. The recess 5a of the sleeve 5 is formed between the pair of protrusions 5b. The contact probe 100 further includes a shaft 4 that connects the pair of protrusions 5b and the base 3b of the probe main body 3 with the base 3b of the probe main body 3 being disposed between the pair of protrusions 5b of the sleeve 5. The probe main body 3 swings in a first direction around the shaft 4.

[0024] 4, when the contact probe 100 is lowered and the tip 3a of the probe body 3 comes into contact with the electrode terminal 1, the probe body 3 swings in the first direction with the shaft 4 as the swing axis, following the tilt of the electrode terminal 1, thereby preventing the tip 3a of the probe body 3 from coming into point contact with the electrode terminal 1. As a result, a stable electrical characteristic test can be carried out that is less affected by the tilt of the electrode terminal 1.

[0025] Furthermore, the contact area between the tip end 3a of the probe main body 3 and the electrode terminal 1 increases, so that even a small contact probe 100 can pass a large current.

[0026] Although not shown, the semiconductor device also includes a plurality of electrode terminals 1. Therefore, a plurality of contact probes 100 may be provided to match the arrangement or shape of the plurality of electrode terminals 1. Even if the plurality of electrode terminals 1 are tilted at different angles, the probe body 3 of each contact probe 100 tilts in accordance with the respective angles, and is therefore less susceptible to variations in the processing of the electrode terminals 1.

[0027] In addition, since the outer peripheral end of the tip 3a of the probe main body 3 has a chamfered shape, damage to the electrode terminal 1 when the tip 3a of the probe main body 3 comes into contact with the electrode terminal 1 is reduced compared to when the tip does not have a chamfered shape.

[0028] <Embodiment 2> Next, a description will be given of embodiment 2. Fig. 5 is a front view of contact probe 100A according to embodiment 2. Note that in embodiment 2, the same components as those described in embodiment 1 are given the same reference numerals and description thereof will be omitted.

[0029] As shown in FIG. 5, in the second embodiment, contact probe 100A further includes a spring plate 6 in addition to the components of the first embodiment.

[0030] The spring plate 6 is provided at the lower end of the tip portion 3a of the probe body 3. The thickness of the spring plate 6 is 1 mm, and the center portion of the spring plate 6 curves downward to come into contact with the electrode terminal 1.

[0031] In the second embodiment, the spring plate 6 bends upward when it comes into contact with the electrode terminal 1, thereby reducing damage to the electrode terminal 1 more than in the first embodiment. As a result, it is possible to provide a high-quality semiconductor device.

[0032] <Third Embodiment> Next, a description will be given of embodiment 3. Fig. 6 is a front view of contact probe 100B according to embodiment 3. Note that in embodiment 3, the same components as those described in embodiments 1 and 2 are given the same reference numerals and description thereof will be omitted.

[0033] As shown in FIG. 6, the third embodiment differs from the first embodiment in the connection structure between probe main body 3 and sleeve 5, and contact probe 100B further includes lid .

[0034] The recess 5a of the sleeve 5 is provided at the lower end of the sleeve 5 and is formed by, for example, drilling so as to be recessed upward. The upper part of the base 3b of the probe main body 3 is spherical, and the lower part is cylindrical with a smaller diameter than the upper part.

[0035] With the upper part of the base 3b housed in the recess 5a of the sleeve 5 and the tip 3a of the probe main body 3 protruding from the recess 5a, the lid 7 closes the entrance to the recess 5a with a gap 7a between it and the base 3b so that the probe main body 3 can swing in a first direction. Because the upper part of the base 3b of the probe main body 3 is spherical, it can swing in all directions.

[0036] Since the lid 7 is detachable, the probe main body 3 can be replaced depending on the size of the electrode terminal 1.

[0037] In embodiment 3, contact probe 100B includes a probe body 3 having a tip portion 3a located on the electrode terminal 1 side and a base portion 3b protruding from tip portion 3a to the side opposite electrode terminal 1, and a sleeve 5 having a recess 5a that accommodates base portion 3b of probe body 3 so that probe body 3 can swing in all directions.

[0038] More specifically, recess 5a of sleeve 5 is provided at the lower end of sleeve 5. Contact probe 100B further includes lid 7 that closes the entrance of recess 5a with gap 7a between it and base 3b so that probe main body 3 can swing in all directions with base 3b of probe main body 3 housed in recess 5a of sleeve 5 and tip end 3a protruding from recess 5a.

[0039] The upper part of the base 3b of the probe main body 3 is spherical, so it can swing in all directions. This allows the probe main body 3 to tilt in accordance with the electrode terminal 1 even if it is tilted in various directions. This makes it possible to carry out a more stable electrical characteristic test that is less affected by the tilt of the electrode terminal 1 than in the first embodiment.

[0040] <Fourth Embodiment> Next, a fourth embodiment will be described. Fig. 7 is a front view of contact probe 100C according to the fourth embodiment. In the fourth embodiment, the same components as those described in the first to third embodiments are denoted by the same reference numerals, and description thereof will be omitted.

[0041] 7, the fourth embodiment differs from the first embodiment in the structure of the sleeve 5. The sleeve 5 has an upper sleeve 15, a lower sleeve 25, and a connecting member .

[0042] The upper sleeve 15 is made of metal and has a cylindrical shape. A pair of protrusions 15b protruding downward is provided at the lower end of the upper sleeve 15. An upwardly recessed recess 15a is formed between the pair of protrusions 15b.

[0043] The lower sleeve 25 is made of metal and formed into a cylindrical shape. A pair of protrusions (not shown) protruding downwards is provided at the lower end of the lower sleeve 25. A recess (not shown) recessed upwards is formed between the pair of protrusions of the lower sleeve 25. The base 3b of the probe main body 3 is housed in the recess of the lower sleeve 25 so that the probe main body 3 can swing in the first direction.

[0044] A base portion 25a protruding upward from the upper end of the lower sleeve 25 is housed in the recess 15a of the upper sleeve 15 so that the lower sleeve 25 can swing in the second direction.

[0045] The connecting member 14 is made of metal and connects the pair of protrusions 15b of the upper sleeve 15 with the base 25a of the lower sleeve 25, with the base 25a of the lower sleeve 25 being disposed between the pair of protrusions 15b. The connecting member 14 functions as a swing axis for the lower sleeve 25. This structure allows the lower sleeve 25 to swing in a second direction around the connecting member 14. Here, the second direction is a direction different from the first direction. Specifically, the second direction is a direction perpendicular to the first direction. While the first direction is the left-right direction in FIG. 7, the second direction is the front-back direction in FIG. 7. The connecting member 14 may be a shaft, a spring, a universal joint, or a ring. The spring plate 6 of the second embodiment may be provided at the tip 3a of the probe body 3.

[0046] In the fourth embodiment, the lower sleeve 25 swings in the second direction around the connecting member 14, and therefore the probe main body 3 can swing in accordance with the inclination of the electrode terminal 1 in multiple directions.

[0047] <Fifth Embodiment> Next, a fifth embodiment will be described. Fig. 8 is a side view of contact probe 100 and power transmission line 8 according to the fifth embodiment. In the fifth embodiment, the same components as those described in the first to fourth embodiments are given the same reference numerals and description thereof will be omitted.

[0048] As shown in Fig. 8, in the fifth embodiment, a power transmission line 8 that supplies current to the probe main body 3 is connected to the probe main body 3. Note that in Fig. 8, the power transmission line 8 is connected to the configuration of the first embodiment, but the present invention is not limited to this, and the power transmission line 8 may be connected to the configurations of the second to fourth embodiments.

[0049] If poor contact or wear occurs between components other than the probe body 3, causing an unstable current supply to the probe body 3, the power transmission line 8 is directly connected to the probe body 3 to stabilize the current supply. Furthermore, by allowing components other than the probe body 3 to be made of insulating materials, the design freedom and manufacturing costs of the contact probe 100 can be improved.

[0050] It should be noted that the embodiments can be freely combined, and each embodiment can be modified or omitted as appropriate.

[0051] Various aspects of the present disclosure are summarized below as appendices.

[0052] (Appendix 1) A contact probe that comes into contact with an electrode terminal of a semiconductor device, a probe body having a tip portion located on the electrode terminal side and a base portion protruding from the tip portion to the side opposite the electrode terminal; a sleeve having a recess that accommodates the base of the probe body so that the probe body can swing in a first direction or in all directions; A contact probe comprising:

[0053] (Appendix 2) 2. The contact probe according to claim 1, wherein an outer peripheral edge of the tip portion of the probe body has a chamfered shape.

[0054] (Appendix 3) the sleeve further has a pair of protrusions protruding from a lower end thereof toward the tip end of the probe body, the recess of the sleeve is formed between the pair of protrusions, a shaft connecting the pair of protrusions and the base of the probe body with the base disposed between the pair of protrusions of the sleeve; 3. The contact probe according to claim 1, wherein the probe body swings in the first direction around the shaft.

[0055] (Appendix 4) 4. The contact probe according to claim 1, further comprising a spring plate provided at the tip of the probe body and in contact with the electrode terminal.

[0056] (Appendix 5) The recess of the sleeve is provided at a lower end of the sleeve, The contact probe according to claim 1 or 2, further comprising a lid that closes an entrance to the recess with a gap between it and the base so that the probe body can swing in all directions with the base of the probe body housed in the recess of the sleeve and the tip end protruding from the recess.

[0057] (Appendix 6) the sleeve includes a lower sleeve in which the recess is provided and an upper sleeve connected to an upper end of the lower sleeve, The contact probe according to claim 3 or 4, further comprising a connecting member that connects the lower sleeve and the upper sleeve so that the lower sleeve can swing in a second direction different from the first direction.

[0058] (Appendix 7) The contact probe according to any one of Supplementary Note 1 to Supplementary Note 6, wherein a power transmission line that passes a current through the probe body is connected to the probe body.

[0059] (Appendix 8) A method for manufacturing a semiconductor device, comprising an inspection step of inspecting electrical characteristics of the semiconductor device using the contact probe according to any one of Supplementary Note 1 to Supplementary Note 7. [Explanation of symbols]

[0060] 1 electrode terminal, 3 probe body, 3a tip portion, 3b base portion, 4 shaft, 5 sleeve, 5a recess portion, 5b protrusion portion, 6 spring plate, 7 cover, 8 power transmission line, 14 connecting member, 15 upper sleeve, 25 lower sleeve, 100, 100A, 100B, 100C contact probes.

Claims

1. A contact probe that comes into contact with an electrode terminal of a semiconductor device, a probe body having a tip portion located on the electrode terminal side and a base portion protruding from the tip portion to the side opposite the electrode terminal; a sleeve having a recess for receiving the base of the probe body so that the probe body can swing in a first direction or in all directions; A contact probe comprising:

2. The contact probe according to claim 1 , wherein an outer peripheral edge of the tip portion of the probe body has a chamfered shape.

3. the sleeve further has a pair of protrusions protruding from a lower end thereof toward the tip end of the probe body, the recess of the sleeve is formed between the pair of protrusions, a shaft connecting the pair of protrusions and the base of the probe body with the base disposed between the pair of protrusions of the sleeve; The contact probe according to claim 1 , wherein the probe body swings in the first direction around the shaft.

4. The contact probe according to claim 1 , further comprising a spring plate provided at the tip end of the probe body and in contact with the electrode terminal.

5. The recess of the sleeve is provided at a lower end of the sleeve, 2. The contact probe according to claim 1, further comprising a lid that closes an entrance to the recess with a gap between it and the base so that the probe body can swing in all directions with the base of the probe body housed in the recess of the sleeve and the tip end protruding from the recess.

6. the sleeve includes a lower sleeve in which the recess is provided and an upper sleeve connected to an upper end of the lower sleeve, The contact probe according to claim 3 , further comprising a connecting member connecting the lower sleeve and the upper sleeve so that the lower sleeve can swing in a second direction different from the first direction.

7. The contact probe according to claim 1 , wherein a power transmission line for passing a current through the probe body is connected to the probe body.

8. A method for manufacturing a semiconductor device, comprising: an inspection step of inspecting electrical characteristics of the semiconductor device using the contact probe according to any one of claims 1 to 7.

Images