Substrate processing system and method of manufacturing article

Abstract

To provide a technique for performing gas replacement of an atmosphere in an intermediate chamber at high speed.SOLUTION: The substrate processing system includes a first container having a first chamber, a second container having a second chamber, an intermediate container having an intermediate chamber, a first circulation pipe that forms a gas flow path through which a gas circulates via the first chamber and a gas flow path through which a gas circulates via the intermediate chamber, a first circulation system that recovers the gas from the first circulation pipe and returns the gas to the first circulation pipe, and a first high-pressure gas supplier that is connected to the first circulation pipe and supplies a high-pressure first gas. The first circulation pipe has a first forward pipe and a first return pipe connected to the intermediate container. The controller performs a first supply processing of supplying a first gas from the first high-pressure gas supply to the intermediate chamber through the first forward pipe in a state where the first chamber and the intermediate chamber do not communicate with each other, and a first transfer processing of filling the intermediate chamber with the first gas, then allowing the first chamber and the intermediate chamber to communicate with each other, and transferring the substrate from the first chamber to the intermediate chamber.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] FIELD The present disclosure relates to substrate processing systems and methods for manufacturing articles. [Background technology]

[0002] In the manufacture of products such as semiconductor devices and flat panel displays, a substrate may be transferred between two chambers with different atmospheres. When transferring a substrate from a first chamber to a second chamber, it may be necessary to prevent contamination of the atmosphere in at least one of the two chambers. Patent Document 1 discloses that a relay chamber (middle chamber) is provided between the two chambers, and the substrate is transferred between the two chambers via the relay chamber. The atmosphere in the middle chamber is replaced with the same type of gas as the atmosphere in the first chamber, which is supplied, for example, from a factory utility facility. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2014-7309 Summary of the Invention [Problem to be solved by the invention]

[0004] However, if gas supplied from the factory utility equipment is directly used for gas replacement in the intermediate chamber, problems arise, such as an increased load on the utility equipment and the need to install piping for gas replacement from the utility equipment to the intermediate chamber. For this reason, there is a demand for gas replacement of the atmosphere in the intermediate chamber to be performed in a short time without directly using gas from the utility equipment.

[0005] The present disclosure provides a technique for quickly replacing the atmosphere in the intermediate chamber with gas. [Means for solving the problem]

[0006] One aspect of the present disclosure provides a gas circulation system including a first container having a first chamber to which a first gas is supplied, a second container having a second chamber to which a second gas different from the first gas is supplied, an intermediate container connected to the first container and the second container and having an intermediate chamber that can communicate with each of the first chamber and the second chamber, a first circulation pipe that forms a gas flow path through which gas circulates via the first chamber and a gas flow path through the intermediate chamber, and a first circulation system that recovers gas from the first circulation pipe and returns the gas to the first circulation pipe, the first circulation pipe being disposed upstream of the intermediate chamber in a gas flow, and The substrate processing system further comprises a first high-pressure gas supply unit, which is arranged downstream of the gas flow, has a first return pipe connected to the intermediate container, is connected to the first circulation pipe, and supplies the first gas at a pressure higher than that of the gas supplied by the first circulation system; and a control unit, wherein the control unit performs a first supply process of supplying the first gas from the first high-pressure gas supply unit to the intermediate chamber via the first forward pipe while the first chamber and the intermediate chamber are not connected to each other, and a first transport process of filling the intermediate chamber with the first gas, connecting the first chamber and the intermediate chamber, and transporting a substrate from the first chamber to the intermediate chamber. [Effects of the Invention]

[0007] According to the present disclosure, a technique for quickly replacing the atmosphere in the intermediate chamber with a gas is provided. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. 1 is an explanatory view of a substrate processing system according to a first embodiment. [Figure 2] 3 is a flowchart of a part of a manufacturing process for an article according to the first embodiment. [Figure 3] 1(a) is an explanatory diagram of a substrate processing system according to Modification 1 of the first embodiment, and FIG. 1(b) is an explanatory diagram of a substrate processing system according to Modification 2 of the first embodiment. [Figure 4]1(a) is an explanatory view of a part of the configuration of a substrate processing system according to a second embodiment, and FIG. 1(b) is an explanatory view of a part of the configuration of a substrate processing system according to a third embodiment. [Figure 5] FIG. 10 is an explanatory view of a substrate processing system according to a fourth embodiment. [Figure 6] 10 is a flowchart of a part of a manufacturing process for an article according to a fourth embodiment. [Figure 7] 10(a) is an explanatory view of a part of the configuration of a substrate processing system according to a fifth embodiment, and FIG. 10(b) is an explanatory view of a part of the configuration of a substrate processing system according to a sixth embodiment. [Figure 8] 10(a) is an explanatory view of a part of the configuration of a substrate processing system according to a seventh embodiment, and FIG. 10(b) is an explanatory view of a part of the configuration of a substrate processing system according to an eighth embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0009] The following embodiments will be described with reference to the drawings. Note that the following embodiments and modifications are merely examples, and those skilled in the art can appropriately modify the detailed configurations, for example, without departing from the spirit of the present invention. In the drawings referred to in the following description of the embodiments and modifications, elements denoted by the same reference numerals have the same functions unless otherwise noted. When multiple identical elements are arranged in a drawing, the assignment of reference numerals and their description may be omitted. Furthermore, the drawings may be represented schematically for the convenience of illustration and explanation, and therefore the shape, size, arrangement, etc. of elements depicted in the drawings may not strictly correspond to the actual objects.

[0010] [First embodiment] FIG. 1 is an explanatory diagram of a substrate processing system 100 according to a first embodiment. The substrate processing system 100 is used in part of a process for manufacturing an article, for example, part of a process for manufacturing a semiconductor device or part of a process for manufacturing a flat panel display. The flat panel display includes a panel (organic EL panel) having an OLED (organic light emitting diode), which is an organic EL (electroluminescence) element. The substrate processing system 100 is used, for example, in part of a process for manufacturing an organic EL panel having an OLED, which is an organic EL element.

[0011] The process of manufacturing an article includes a process of processing a substrate S. The substrate processing system 100 is used in the process of processing the substrate S. For example, the process of manufacturing an organic EL panel includes a cleaning process of cleaning the substrate S, a coating process of coating a film-forming solution onto the substrate S by, for example, an inkjet method, a drying process of drying the coated solution to form a dry film, and a baking process of baking the dry film, and the substrate processing system 100 is used in any of the processes.

[0012] The substrate processing system 100 includes a plurality of containers 101, 102, and 103, circulation systems 4 and 5, circulation pipes 7 and 8, and a control device 90. The containers 101, 102, and 103 are airtight containers with high airtightness.

[0013] The container 101 is a container that defines a robot chamber 1. The container 101 is an example of a first container, and the robot chamber 1 is an example of a first room that is a chamber. A robot RB is disposed in the robot chamber 1. The robot RB is a robot that transports a substrate S.

[0014] The container 102 is a container that defines an intermediate chamber 2. The container 102 is an example of an intermediate container. The intermediate chamber 2 is a chamber.

[0015] The container 103 is a container that defines the processing chamber 3. The container 103 is an example of a second container, and the processing chamber 3 is an example of a second room that is a chamber. The processing chamber 3 is a room used to process the substrate S. The substrate S transported to the processing chamber 3 is subjected to a predetermined process by a processing device (not shown).

[0016] The specified process may be a coating process for coating a solution onto the substrate S, a drying process for drying the solution coated onto the substrate S, a baking process for baking the dried film obtained by drying the solution, or a cleaning process for cleaning the substrate S.

[0017] The solution is composed of, for example, a solution (ink) containing a solute and a solvent for forming an organic film on the substrate S. The organic film is, for example, any of a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer of an organic EL (OLED) element. The production of an organic EL element includes the steps of forming each organic film, such as the hole injection layer, the hole transport layer, the light-emitting layer, the electron transport layer, and the electron injection layer, on the substrate S.

[0018] A first gas is supplied to the robot chamber 1. To prevent the substrate S from being altered in the robot chamber 1, it is preferable that the first gas supplied to the robot chamber 1, i.e., the main component of the atmosphere in the robot chamber 1, is an inert gas. That is, it is preferable that the atmosphere in the robot chamber 1 be 90% or more inert gas by volume. In the first embodiment, the first gas is, for example, N2 gas (nitrogen gas). The gas in the atmosphere of the robot chamber 1 may contain oxygen, moisture, etc. in addition to nitrogen, which is the main component. In the robot chamber 1, the oxygen concentration is preferably below a predetermined value, for example, below 10 ppm.

[0019] A second gas is supplied to the processing chamber 3. The second gas is a gas different from the first gas, such as CDA gas (clean dry air gas). In the first embodiment, the main component of the gas supplied to the processing chamber 3 may be CDA gas. The gas in the atmosphere of the processing chamber 3 may contain moisture in addition to the main component. CDA gas is a gas containing approximately 78% nitrogen and approximately 20% oxygen. For example, CDA gas, which can be supplied at a relatively low cost, is preferably used as the atmosphere in the processing chamber of a cleaning device, a coating device, or a baking device. CDA gas is particularly preferably used in processes that require an appropriate amount of oxygen, such as baking. The atmosphere in these processing devices has a higher oxygen content than the atmosphere in the robot chamber 1.

[0020] When transferring a substrate S from the robot chamber 1 to the processing chamber 3, if the robot chamber 1 and the processing chamber 3 were directly connected via a gate valve, the N2 gas and the CDA gas would mix in each of the robot chamber 1 and the processing chamber 3, making it impossible to maintain the desired atmosphere in each of the robot chamber 1 and the processing chamber 3. For example, the oxygen concentration in the atmospheric gas in the robot chamber 1 is 10 ppm or less, while the oxygen concentration in the atmospheric gas in the processing chamber 3 is about 20%. Therefore, if the robot chamber 1 and the processing chamber 3 were directly connected, the oxygen concentration in the atmosphere in the robot chamber 1 would increase.

[0021] Therefore, in the first embodiment, a container 102 that defines an intermediate chamber 2 is disposed between the container 101 and the container 103. The container 102 is connected to the container 101 via a gate valve 10a, and is connected to the container 103 via a gate valve 10b.

[0022] The intermediate chamber 2 can be connected to the robot chamber 1 via the gate valve 10a. That is, the intermediate chamber 2 is connected to the robot chamber 1 when the gate valve 10a is open, and is not connected to the robot chamber 1 when the gate valve 10a is closed.

[0023] Furthermore, the intermediate chamber 2 can be connected to the processing chamber 3 via the gate valve 10b. That is, when the gate valve 10b is opened, the intermediate chamber 2 is connected to the processing chamber 3, and when the gate valve 10b is closed, the intermediate chamber 2 is not connected to the processing chamber 3.

[0024] The circulation system 4 is connected to a circulation pipe 7. The circulation system 5 is connected to a circulation pipe 8. The circulation pipe 7 forms a gas flow path through which gas circulates via the robot chamber 1 and a gas flow path through which gas circulates via the intermediate chamber 2. The circulation pipe 8 forms a gas flow path through which gas circulates via the processing chamber 3. The circulation system 4 is an example of a first circulation system. The circulation system 5 is an example of a second circulation system. The circulation pipe 7 is an example of a first circulation pipe. The circulation pipe 8 is an example of a second circulation pipe.

[0025] The circulation system 4 outputs the purified gas from the gas output port 41. That is, the circulation system 4 filters the gas input from the gas input port 42 and outputs the filtered gas from the gas output port 41. Specifically, the circulation system 4 operates to collect gas from the gas input port 42, remove oxygen and moisture from the collected gas, and output the gas from which oxygen and moisture have been removed from the gas output port 41. Through this operation, the circulation system 4 collects gas from the circulation piping 7 and returns the gas to the circulation piping 7.

[0026] The circulation system 5 outputs the purified gas from the gas output port 51. That is, the circulation system 5 filters the gas input from the gas input port 52 and outputs the filtered gas from the gas output port 51. Specifically, the circulation system 5 operates to collect gas from the gas input port 52, remove moisture from the collected gas, and output the gas from which moisture has been removed from the gas output port 51. Through this operation, the circulation system 5 collects gas from the circulation piping 8 and returns the gas to the circulation piping 8.

[0027] The circulation pipe 7 includes a main pipe 71, a main pipe 72, an outward pipe 7a, a return pipe 7b, an outward pipe 7d, and a return pipe 7e. The main pipe 71 is connected to the gas output port 41, and the main pipe 72 is connected to the gas input port 42 of the circulation system 4.

[0028] The outbound pipe 7a is a pipe that connects the main pipe 71 and the container 102, and is connected to the main pipe 71 and the container 102. A valve 11a is arranged in the outbound pipe 7a. The return pipe 7b is a pipe that connects the main pipe 72 and the container 102, and is connected to the main pipe 72 and the container 102. A valve 11b is arranged in the return pipe 7b. The return pipe 7b has a point P1 upstream of the valve 11b. Point P1 is a branch point. A branch pipe 7c that branches off from the return pipe 7b is connected to point P1 of the return pipe 7b. That is, the branch pipe 7c branches off from point P1 on the return pipe 7b, which is upstream of the valve 11b in the gas flow. The branch pipe 7c is connected to the exhaust pipe 9. A valve 11c is arranged in the branch pipe 7c. The outbound pipe 7a is an example of a first outbound pipe. The return pipe 7b is an example of a first return pipe. The branch pipe 7c is an example of a first branch pipe. The valve 11b is an example of a first valve. The location P1 is an example of a first location.

[0029] The outward piping 7a is arranged on the upstream side of the gas flow relative to the intermediate chamber 2. The return piping 7b is arranged on the downstream side of the gas flow relative to the intermediate chamber 2.

[0030] The outbound pipe 7d is a pipe that connects the main pipe 71 and the container 101, and is connected to the main pipe 71 and the container 101. A valve 11g is arranged in the outbound pipe 7d. The return pipe 7e is a pipe that connects the main pipe 72 and the container 101, and is connected to the main pipe 72 and the container 101. A valve 11h is arranged in the return pipe 7e. The return pipe 7e has a point P11 upstream of the valve 11h. The point P11 is a branch point. A branch pipe 7f that branches off from the return pipe 7e is connected to the point P11 of the return pipe 7e. That is, the branch pipe 7f branches off from the return pipe 7e at a point P11 upstream of the valve 11h in the gas flow. The branch pipe 7f is connected to the exhaust pipe 9. A valve 11i is arranged in the branch pipe 7f.

[0031] The outgoing pipe 7d is disposed on the upstream side of the gas flow relative to the robot chamber 1. The returning pipe 7e is disposed on the downstream side of the gas flow relative to the robot chamber 1.

[0032] The circulation pipe 8 has a main pipe 81, a main pipe 82, an outward pipe 8d, and a return pipe 8e. The main pipe 81 is connected to the gas output port 51, and the main pipe 82 is connected to the gas input port 52 of the circulation system 5.

[0033] The outbound pipe 8d is a pipe that connects the main pipe 81 and the container 103, and is connected to the main pipe 81 and the container 103. A valve 11j is arranged in the outbound pipe 8d. The return pipe 8e is a pipe that connects the main pipe 82 and the container 103, and is connected to the main pipe 82 and the container 103. A valve 11k is arranged in the return pipe 8e. The return pipe 8e has a point P12 upstream of the valve 11k. The point P12 is a branch point. A branch pipe 8f that branches off from the return pipe 8e is connected to the point P12 of the return pipe 8e. That is, the branch pipe 8f branches off from the return pipe 8e at a point P12 upstream of the valve 11k in the gas flow direction in the return pipe 8e. The branch pipe 8f is connected to the exhaust pipe 9. A valve 11m is arranged in the branch pipe 8f.

[0034] The outward piping 8d is disposed on the upstream side of the gas flow relative to the processing chamber 3. The return piping 8e is disposed on the downstream side of the gas flow relative to the processing chamber 3.

[0035] The circulation system 4 is used to remove oxygen and moisture from the ambient gas of the robot chamber 1. The circulation system 5 is used to remove moisture from the ambient gas of the processing chamber 3.

[0036] In the first embodiment, the substrate processing system 100 includes a high-pressure gas tank 6a that stores N2 gas. The high-pressure gas tank 6a is an example of a first high-pressure gas supply unit. The high-pressure gas tank 6a is connected to a main pipe 71 of the circulation pipe 7 via a gas supply pipe 14. A valve 12a is disposed on the gas supply pipe 14. The valve 12a is an example of a second valve. The high-pressure gas tank 6a supplies N2 gas to the circulation pipe 7 at a pressure higher than that of the gas supplied by the circulation system 4. In the first embodiment, the pressure of the N2 gas supplied by the high-pressure gas tank 6a is 0.4 MPa or higher and 0.7 MPa or lower.

[0037] A first utility facility (not shown) located in the factory is connected to the container 101 via a pipe 17a, and a valve 18a is provided on the pipe 17a. The first utility facility supplies N2 gas. A second utility facility (not shown) located in the factory is connected to the container 103 via a pipe 17b, and a valve 18b is provided on the pipe 17b. The second utility facility supplies CDA gas.

[0038] Valves 11a, 11b, 11c, 11g, 11h, 11i, 11j, 11k, 11m, 12a, 18a, and 18b are configured to open and close gas flow paths. Valves 11a, 11b, 11c, 11g, 11h, 11i, 11j, 11k, 11m, 12a, 18a, and 18b are flow control valves configured to adjust the flow rate of gas flowing through the gas flow paths by adjusting the opening degree of the valves.

[0039] Furthermore, an oxygen concentration meter 13b that measures the oxygen concentration in the robot chamber 1 is connected to the container 101, and an oxygen concentration meter 13c that measures the oxygen concentration in the intermediate chamber 2 is connected to the container 102. The oxygen concentration meter 13c is an example of a first measuring meter.

[0040] The control device 90 is an example of a control unit. The control device 90 is configured to control each part of the entire substrate processing system 100. For example, the control device 90 is configured to control the robot RB, the gate valves 10a and 10b, a processing device (not shown) that processes the substrate S in the processing chamber 3, the circulation systems 4 and 5, and the valves 11a, 11b, 11c, 11g, 11h, 11i, 11j, 11k, 11m, and 12a.

[0041] The control device 90 is configured by, for example, a computer. The control device 90 includes a CPU which is an example of a processor, a RAM which is a temporary storage device, a ROM and an SSD which are non-temporary storage devices (recording media), an I / O which is an interface, etc. The non-temporary storage device stores a control program that causes the CPU of the control device 90 to control each part of the entire device.

[0042] In addition to the above-mentioned configuration, the control device 90 having a processor may be configured using, for example, a PLD (Programmable Logic Device) such as an FPGA (Field Programmable Gate Array), an ASIC (Application Specific Integrated Circuit), a general-purpose or dedicated computer with a built-in program, or a combination of all or part of these.

[0043] Hereinafter, some of the steps of the method for manufacturing an organic EL panel, which is an example of an article, will be described. Fig. 2 is a flowchart of some of the steps for manufacturing an article according to the first embodiment.

[0044] It is assumed that the robot chamber 1 is filled with N2 gas supplied from a first utility facility (not shown), and the processing chamber 3 is filled with CDA gas supplied from a second utility facility (not shown). Specifically, the control device 90 closes gate valves 10a and 10b and valves 11a, 11b, 11c, 11g, 11h, 11j, 11k, 12a, 18a, and 18b, and opens valves 11i, 11m, 18a, and 18b. This allows N2 gas to be supplied from the first utility facility to the robot chamber 1, and the ambient gas in the robot chamber 1 is exhausted to the exhaust pipe 9 via the return pipe 7e, valve 11i, and branch pipe 7f. CDA gas is supplied from the second utility facility to the processing chamber 3, and the ambient gas in the processing chamber 3 is exhausted to the exhaust pipe 9 via the return pipe 8e, valve 11m, and branch pipe 8f.

[0045] When the ambient gas in the robot chamber 1 is filled with N2 gas, specifically when the oxygen concentration measured by the oxygen concentration meter 13b falls below a predetermined value (e.g., 10 ppm), the control device 90 closes valve 18a and opens valves 11g and 11h. This causes gas to circulate between the robot chamber 1 and the circulation system 4, and the purification process by the circulation system 4 keeps the gas concentration in the ambient gas in the robot chamber 1, i.e., the concentration of N2 gas, constant.

[0046] After the ambient gas in the processing chamber 3 is filled with CDA gas, the control device 90 closes the valve 18b and opens the valves 11j and 11k, thereby circulating the CDA gas between the processing chamber 3 and the circulation system 5.

[0047] With the atmosphere in the robot chamber 1 adjusted to N2 gas and the atmosphere in the processing chamber 3 adjusted to CDA gas as described above, the control device 90 causes the robot RB to unload the substrate S from a chamber (not shown). As a result, the robot RB is in a state of holding the substrate S.

[0048] In step S1, the control device 90 executes a first supply process to supply high-pressure N2 gas from the high-pressure gas tank 6a via the gas supply pipe 14, the main pipe 71, and the outward pipe 7a to the intermediate chamber 2 by controlling the valves 11a, 11c, and 12a to open them. The valve 11b is in a closed state. The N2 gas supplied from the high-pressure gas tank 6a has a higher pressure than the gas supplied by the circulation system 4. By opening the valves 11a, 11c, and 12a, the high-pressure N2 gas is supplied from the high-pressure gas tank 6a to the main pipe 71 via the gas supply pipe 14. Then, the N2 gas is supplied to the intermediate chamber 2 via the outward pipe 7a and the valve 11a.

[0049] Here, the concentration of oxygen gas (O2 gas) in the atmosphere of the intermediate chamber 2 may exceed the purification capacity of the circulation system 4. For example, because the intermediate chamber 2 is also connected to the processing chamber 3, the intermediate chamber 2 may be filled with CDA gas. If CDA gas flows into the circulation system 4 in an amount exceeding the allowable amount, the circulation system 4 will be contaminated, and as a result, gas that has not been purified in the circulation system 4 may be dispersed to the robot chamber 1, etc.

[0050] In the first embodiment, in the first supply process of step S1, the valve 11b is closed, and therefore the atmospheric gas in the intermediate chamber 2 is exhausted to the exhaust pipe 9 via the return pipe 7b, the valve 11c, and the branch pipe 7c. As a result, the gas is not returned to the circulation system 4, and the atmosphere in the intermediate chamber 2 is gradually replaced with N2 gas from CDA gas.

[0051] That is, in step S1, the control device 90 controls the valves 11a, 11c, and 12a to open the valves 11a, 11c, and 12a while keeping the valve 11b closed, thereby performing a process of exhausting the gas in the intermediate chamber 2 from the intermediate chamber 2 to the exhaust pipe 9 via the branch pipe 7c without returning it to the circulation system 4. As described above, an N2 gas atmosphere is formed in the intermediate chamber 2 by the N2 gas supplied from the high-pressure gas tank 6a via the circulation pipe 7.

[0052] Here, in step S1, the gate valves 10a and 10b are closed, that is, the robot chamber 1 and the intermediate chamber 2 are not in communication with each other, and the intermediate chamber 2 and the processing chamber 3 are not in communication with each other.

[0053] In this way, the atmospheric gas in the intermediate chamber 2 can be replaced with N2 gas using the high-pressure gas tank 6a, thereby reducing the load on the first utility facility. Also, there is no need to lay piping for gas replacement between the first utility facility and the container 102. Furthermore, by using high-pressure N2 gas from the high-pressure gas tank 6a for gas replacement of the atmosphere in the intermediate chamber 2, gas replacement of the atmosphere in the intermediate chamber 2 can be performed quickly.

[0054] It is also possible to connect the high-pressure gas tank 6a directly to the intermediate chamber 2 via piping. However, it is expected that pressure will locally increase at the connection portion of the piping to the intermediate chamber 2 when high-pressure gas is supplied, and measures will be needed to create a connection structure that can withstand that pressure, and it will also be necessary to install a separate piping for connection to the intermediate chamber 2. In contrast, in the first embodiment, N2 gas is supplied to the intermediate chamber 2 via the circulation piping 7, so there is no need to install a separate connection structure for connecting the high-pressure gas tank 6a to the container 102, and there is no need to install a separate piping, separate from the circulation piping 7, for directly connecting the high-pressure gas tank 6a to the intermediate chamber 2.

[0055] Next, when the intermediate chamber 2 is filled with N2 gas by the process of step S1, in step S2, the control device 90 controls the valves 12a and 11b to close the valve 12a and open the valve 11b. The control device 90 determines whether the intermediate chamber 2 is filled with N2 gas based on the measurement result of the oxygen concentration meter 13c. Specifically, the control device 90 determines whether the oxygen concentration measured by the oxygen concentration meter 13c is equal to or lower than a predetermined value (e.g., 10 ppm). If the oxygen concentration measured by the oxygen concentration meter 13c is equal to or lower than the predetermined value (e.g., 10 ppm), the intermediate chamber 2 is filled with N2 gas. When the control device 90 closes the valve 12a and opens the valve 11b, the circulation system 4 operates to circulate N2 gas between the intermediate chamber 2 and the circulation system 4. That is, the control device 90 executes a process to circulate N2 gas between the intermediate chamber 2 and the circulation system 4 via the circulation pipe 7.

[0056] Next, in step S3, the control device 90 fills the intermediate chamber 2 with N2 gas, then opens the gate valve 10a to connect the robot chamber 1 and the intermediate chamber 2, and causes the robot RB to transfer the substrate S from the robot chamber 1 to the intermediate chamber 2. In this way, the control device 90 controls the gate valve 10a and the robot RB to perform a first transfer process of transferring the substrate S from the robot chamber 1 to the intermediate chamber 2. Also in the first transfer process, the control device 90 performs a process of circulating N2 gas between the intermediate chamber 2 and the circulation system 4 via the circulation pipe 7 with the valve 12a closed and the valves 11a and 11b open.

[0057] Next, in step S4, the control device 90 delivers the substrate S to a transfer mechanism (not shown) arranged in the intermediate chamber 2, and then causes the robot RB to retreat from the intermediate chamber 2 and closes the gate valve 10a. This completes the transfer process of the substrate S to the intermediate chamber 2.

[0058] Next, in step S5, the control device 90 closes the valves 11a, 11b, and 11c to bring the intermediate chamber 2 into a non-communicating state with the circulation pipe 7. That is, the control device 90 separates the circulation pipe 7 from the intermediate chamber 2.

[0059] Next, in step S6, the control device 90, with the circulation pipe 7 disconnected from the intermediate chamber 2, opens the gate valve 10b to connect the intermediate chamber 2 to the processing chamber 3, and causes a transfer mechanism (not shown) to transfer the substrate S from the intermediate chamber 2 to the processing chamber 3. That is, the control device 90 executes a second transfer process to transfer the substrate S from the intermediate chamber 2 to the processing chamber 3.

[0060] Next, in step S7, the control device 90 places the substrate S on a substrate holder (not shown) disposed in the processing chamber 3, and then causes the transport mechanism to retreat from the processing chamber 3. This completes the transport process of the substrate S to the processing chamber 3.

[0061] Next, in step S8, the control device 90 causes a processing device (not shown) in the processing chamber 3 to process the substrate S. At this time, the gate valve 10b may be closed, but in the first embodiment, the processing of the substrate S is performed with the gate valve 10b open.

[0062] Next, after the processing of the substrate S is completed, in step S9, the control device 90 causes a transfer mechanism (not shown) to transfer the substrate S from the processing chamber 3 to the intermediate chamber 2.

[0063] Next, after the substrate S is transferred to the intermediate chamber 2, in step S10, the control device 90 controls the gate valve 10b and the valves 11a, 11c, and 12a to close the gate valve 10b and open the valves 11a, 11c, and 12a, thereby supplying high-pressure N2 gas from the high-pressure gas tank 6a to the intermediate chamber 2 via the gas supply pipe 14, the main pipe 71, and the outward pipe 7a. The N2 gas supplied from the high-pressure gas tank 6a is at a higher pressure than the gas supplied by the circulation system 4. By opening the valves 11a, 11c, and 12a, the high-pressure N2 gas is supplied from the high-pressure gas tank 6a to the main pipe 71 via the gas supply pipe 14. The N2 gas is then supplied to the intermediate chamber 2 via the outward pipe 7a and the valve 11a. By the process of step S10, the ambient gas in the intermediate chamber 2 is exhausted to the exhaust pipe 9 via the return pipe 7b, the valve 11c, and the branch pipe 7c, and is gradually replaced with N2 gas. That is, in step S10, the control device 90 controls the valves 11a, 11c, and 12a to open the valves 11a, 11c, and 12a while keeping the valve 11b closed, thereby performing a process of exhausting the gas in the intermediate chamber 2 from the intermediate chamber 2 to the exhaust pipe 9 via the branch pipe 7c without returning it to the circulation system 4. As a result, the atmospheric gas in the intermediate chamber 2 is replaced with N2 gas.

[0064] Here, in step S10, the gate valves 10a and 10b are closed, that is, the robot chamber 1 and the intermediate chamber 2 are not in communication with each other, and the intermediate chamber 2 and the processing chamber 3 are not in communication with each other.

[0065] Next, when the intermediate chamber 2 is filled with N2 gas by the process of step S10, in step S11, the control device 90 controls the valves 12a and 11b to close the valve 12a and open the valve 11b. The control device 90 determines whether the intermediate chamber 2 is filled with N2 gas based on the measurement result of the oxygen concentration meter 13c. Specifically, the control device 90 determines whether the oxygen concentration measured by the oxygen concentration meter 13c is equal to or lower than a predetermined value (e.g., 10 ppm). If the oxygen concentration measured by the oxygen concentration meter 13c is equal to or lower than the predetermined value (e.g., 10 ppm), the intermediate chamber 2 is filled with N2 gas. When the control device 90 closes the valve 12a and opens the valve 11b, the circulation system 4 operates to circulate N2 gas between the intermediate chamber 2 and the circulation system 4. That is, the control device 90 executes a process to circulate N2 gas between the intermediate chamber 2 and the circulation system 4 via the circulation pipe 7.

[0066] Next, in step S12, the control device 90 fills the intermediate chamber 2 with N2 gas, then opens the gate valve 10a to connect the robot chamber 1 and the intermediate chamber 2, and causes the robot RB to transfer the substrate S from the intermediate chamber 2 to the robot chamber 1. In this way, the control device 90 controls the gate valve 10a and the robot RB to perform a transfer process for transferring the substrate S from the intermediate chamber 2 to the robot chamber 1. Also, in this transfer process, the control device 90 performs a process for circulating N2 gas between the intermediate chamber 2 and the circulation system 4 via the circulation pipe 7 with the valve 12a closed and the valves 11a and 11b open.

[0067] Then, in step S13, when the transport process of the substrate S is completed by causing the robot RB to retreat from the intermediate chamber 2, the control device 90 returns to the process of step S3 and causes the robot RB to transport another substrate from the robot chamber 1 to the intermediate chamber 2.

[0068] As described above, according to the first embodiment, contamination of the atmosphere in the robot chamber 1 can be prevented. Furthermore, since high-pressure N2 gas can be supplied to the intermediate chamber 2 via the circulation piping 7, the atmosphere in the intermediate chamber 2 can be replaced with N2 gas in a short time. Since there is no need to use the first utility facility of the factory when replacing the atmosphere in the intermediate chamber 2 with N2 gas, the load on the first utility facility can be leveled. Furthermore, since there is no need to connect the container 102 that defines the intermediate chamber 2 to the first utility facility of the factory with piping, the construction load can be reduced.

[0069] Furthermore, the circulation pipe 7 is connected to the intermediate chamber 2 in addition to the robot chamber 1. The inner diameter of the circulation pipe 7 (diameter of the gas flow path) is approximately 200 mm to 300 mm, and the circulation system 4 can circulate low-pressure gas at a large volume. This allows the gas concentration in the atmospheres of the robot chamber 1 and the intermediate chamber 2 to be kept constant. In the first embodiment, the circulation pipe 7 is used to replace the gas in the atmosphere of the intermediate chamber 2 using the high-pressure gas tank 6a. This eliminates the need to install a separate piping system to connect the high-pressure gas tank 6a to the intermediate chamber 2. In this way, N2 gas can be supplied from the high-pressure gas tank 6a to the intermediate chamber 2 via the circulation pipe 7, thereby reducing the construction load.

[0070] Although the example has been described in which the circulation pipe 7 has main pipes 71 and 72, and the high-pressure gas tank 6a is connected to the main pipe 71 via the gas supply pipe 14, and is thereby connected to the outbound pipe 7a via the main pipe 71, the present invention is not limited to this. For example, the high-pressure gas tank 6a may be connected to the outbound pipe 7a without going through the main pipe 71.

[0071] In addition, although the case where the robot chamber 1 is the first chamber and the processing chamber 3 is the second chamber, i.e., the container 101 is the first container and the container 103 is the second container, has been described, the present invention is not limited to this. For example, the processing chamber 3 may be the first chamber and the robot chamber 1 may be the second chamber, i.e., the container 103 may be the first container and the container 101 may be the second container.

[0072] Furthermore, the number of containers included in the substrate processing system is not limited to three. Fig. 3(a) is an explanatory diagram of a substrate processing system 100A according to Modification 1 of the first embodiment. The substrate processing system 100A of Modification 1 has five containers 101a, 102a, 103, 102b, and 101b. Note that the piping system is not shown in Fig. 3(a). The container 101a defines the robot chamber 1a, the container 102a defines the intermediate chamber 2a, the container 103 defines the processing chamber 3, the container 102b defines the intermediate chamber 2b, and the container 101b defines the robot chamber 1b.

[0073] The container 101a and the container 102a are connected via a gate valve 10a, the container 102a and the container 103 are connected via a gate valve 10b, the container 103 and the container 102b are connected via a gate valve 10c, and the container 102b and the container 101b are connected via a gate valve 10d. The atmospheric gas in the robot chambers 1a and 1b is N2 gas, and the atmospheric gas in the processing chamber 3 is CDA gas.

[0074] The substrate processing system 100A shown in FIG. 3(a) is a system in which a substrate is transported from a robot chamber 1a to a processing chamber 3 via a gate valve 10a, an intermediate chamber 2a, and a gate valve 10b, and after a predetermined processing is completed in the processing chamber 3, the substrate is transported from the processing chamber 3 to the robot chamber 1b via a gate valve 10c, an intermediate chamber 2b, and a gate valve 10d.

[0075] 1 of the first embodiment, the intermediate chambers 2a and 2b are configured so that gas replacement is performed by the high-pressure gas tank 6a via the circulation pipe 7. Even with this configuration, high-pressure N2 gas can be supplied to the intermediate chambers 2a and 2b via the circulation pipe 7, so that the atmosphere in the intermediate chambers 2a and 2b can be replaced with N2 gas in a short time.

[0076] Fig. 3(b) is an explanatory diagram of a substrate processing system 100B according to Modification 2 of the first embodiment. The substrate processing system 100B of Modification 2 has four containers 101a, 102a, 103, and 101b. Note that the piping system is not shown in Fig. 3(b). The container 101a defines the robot chamber 1a, the container 102a defines the intermediate chamber 2a, the container 103 defines the processing chamber 3, and the container 101b defines the robot chamber 1b.

[0077] The container 101a and the container 102a are connected via a gate valve 10a, the container 102a and the container 103 are connected via a gate valve 10b, and the container 103 and the container 101b are connected via a gate valve 10e. The atmospheric gas in the robot chambers 1a and 1b is N2 gas, and the atmospheric gas in the processing chamber 3 is CDA gas.

[0078] The substrate processing system 100B shown in FIG. 3(b) is a system in which a substrate is transported from the robot chamber 1a to the processing chamber 3 via the gate valve 10a, the intermediate chamber 2a, and the gate valve 10b, and after the predetermined processing is completed in the processing chamber 3, the substrate is transported from the processing chamber 3 to the robot chamber 1b via the gate valve 10e.

[0079] 1 of the first embodiment, the intermediate chamber 2a is configured so that gas replacement is performed by the high-pressure gas tank 6a via the circulation pipe 7. Even with this configuration, high-pressure N2 gas can be supplied to the intermediate chamber 2a via the circulation pipe 7, so that the atmosphere in the intermediate chamber 2a can be replaced with N2 gas in a short time.

[0080] [Second embodiment] The second embodiment will be described. Below, elements with the same reference symbols as those in the first embodiment will have substantially the same configurations and functions as those described in the first embodiment unless otherwise specified, and differences from the first embodiment will be mainly described.

[0081] Fig. 4(a) is an explanatory view of a part of the configuration of a substrate processing system 100C according to the second embodiment. Note that in Fig. 4(a), the main pipes 71 and 72 of the circulation pipe 7 are not shown.

[0082] The high-pressure gas tank 6a is connected to both the outward pipe 7a and the return pipe 7b via a valve 12a. The valve 12a is an example of a second valve. The high-pressure gas tank 6a is connected to both the outward pipe 7a and the return pipe 7b of the circulation pipe 7 via a gas supply pipe 14. When the gas flow from the high-pressure gas tank 6a is taken as the reference, the gas supply pipe 14 branches into gas supply pipes 14a and 14b downstream of the valve 12a in the gas flow. The gas supply pipe 14a is connected to the outward pipe 7a, and the gas supply pipe 14b is connected to the return pipe 7b. Specifically, the gas supply pipe 14a is connected to the outward pipe 7a upstream of the valve 11a in the gas flow, and the gas supply pipe 14b is connected to a section A1 in the return pipe 7b between point P1 and the valve 11b.

[0083] When replacing the atmosphere in the intermediate chamber 2 with N2 gas from CDA gas, for example, in steps S1 and S10 of Fig. 2, the control device 90 closes valve 11b and opens valves 11a and 11c. Thereafter, the control device 90 controls valve 12a to open valve 12a, thereby outputting high-pressure N2 gas from the high-pressure gas tank 6a to the gas supply pipe 14. The N2 gas that passes through valve 12a and flows into gas supply pipe 14a is supplied to the intermediate chamber 2 via the outward pipe 7a and valve 11a. The gas containing CDA gas remaining in the intermediate chamber 2 is exhausted to the exhaust pipe 9 via the return pipe 7b and branch pipe 7c.

[0084] Here, when the valve 11b is closed and the gas in the intermediate chamber 2 is exhausted to the exhaust pipe 9 via the branch pipe 7c, gas tends to accumulate in the section A1 of the return pipe 7b between the valve 11b and the location P1. If gas containing a high concentration of oxygen remains in the section A1, when the valve 11b is opened, the gas containing a high concentration of oxygen will flow into the circulation system 4. In the second embodiment, the N2 gas that passes through the valve 12a and flows into the gas supply pipe 14b is supplied to the section A1 of the return pipe 7b and is exhausted from the location P1 to the exhaust pipe 9 via the branch pipe 7c together with the gas remaining in the section A1. This reduces the oxygen concentration in the gas flowing into the circulation system 4, thereby reducing the processing load on the circulation system 4.

[0085] The substrate processing system 100C of the second embodiment includes an oxygen concentration meter 13a disposed in the return pipe 7b. The oxygen concentration meter 13a is used to measure the oxygen concentration in the gas flow path in section A1 between the valve 11b and point P1 in the return pipe 7b. The oxygen concentration meter 13a is an example of a second measuring meter. The oxygen concentration meter 13a is disposed upstream of the gas flow relative to the valve 11b, with respect to the flow of gas circulated by the circulation system 4. That is, the oxygen concentration meter 13a is disposed between the valve 11b and point P1 in the return pipe 7b. The gas supply pipe 14b is preferably connected between the oxygen concentration meter 13a and the valve 11b in the return pipe 7b.

[0086] In step S1, the control device 90 monitors the oxygen concentration in the intermediate chamber 2 and the gas flow path in section A1 of the return piping 7b. When the intermediate chamber 2 is filled with N2 gas and the gas flow path in section A1 of the return piping 7b is filled with N2 gas, the control device 90 ends the first supply process and proceeds to the next step S2.

[0087] In step S10, the control device 90 monitors the oxygen concentration in the intermediate chamber 2 as in step S1, and also monitors the oxygen concentration in the gas flow path of section A1 of the return piping 7b.When the intermediate chamber 2 is filled with N2 gas and the gas flow path of section A1 of the return piping 7b is filled with N2 gas, the supply process is terminated and the process proceeds to the next step S11.

[0088] The control device 90 determines whether the gas flow path in the return pipe 7b, section A1 between the intermediate chamber 2 and valve 11b, is filled with N2 gas based on the measurement result of the oxygen concentration meter 13a. Specifically, the control device 90 determines whether the oxygen concentration measured by the oxygen concentration meter 13a is equal to or lower than a predetermined value (e.g., 10 ppm). If the oxygen concentration measured by the oxygen concentration meter 13a is equal to or lower than the predetermined value (e.g., 10 ppm), the gas flow path in section A1 is filled with N2 gas. In steps S2 and S11, the control device 90 closes valve 12a and opens valve 11b, thereby operating the circulation system 4 to circulate N2 gas between the intermediate chamber 2 and circulation system 4. That is, the control device 90 executes a process of circulating N2 gas between the intermediate chamber 2 and circulation system 4 via the circulation pipe 7.

[0089] To specifically describe the monitoring process of steps S1 and S10, when the oxygen concentration measured by oxygen concentration meter 13c becomes equal to or less than a predetermined value (first value) and when the oxygen concentration measured by oxygen concentration meter 13a becomes equal to or less than the predetermined value (first value), the control device 90 terminates the process of supplying high-pressure gas from the high-pressure gas tank 6a. That is, the control device 90 controls valves 12a and 11b to close valve 12a and open valve 11b.

[0090] In the second embodiment, the oxygen concentration in the ambient gas in the intermediate chamber 2 is monitored by the oxygen concentration meter 13c, and the oxygen concentration in the ambient gas in the gas flow path of section A1 is monitored by the oxygen concentration meter 13a. Based on these monitoring results, the control device 90 proceeds to the next step S2 or S11. Therefore, immediately after starting the process of step S2 or S11, the oxygen concentration in the gas input to the circulation system 4 becomes low, and the circulation system 4 can be operated stably.

[0091] As described above, in the second embodiment, as in the first embodiment, contamination of the atmosphere in the robot chamber 1 can be prevented. Furthermore, since high-pressure N2 gas can be supplied to the intermediate chamber 2 via the circulation piping 7, the atmosphere in the intermediate chamber 2 can be replaced with N2 gas in a short time. Since there is no need to use the first utility facility of the factory when replacing the atmosphere in the intermediate chamber 2 with N2 gas, the load on the first utility facility can be leveled. Furthermore, since there is no need to connect the container 102 that defines the intermediate chamber 2 to the first utility facility of the factory with a piping, the construction load can be reduced. Furthermore, the atmosphere in the gas flow path of the return piping 7b can also be replaced with N2 gas from the high-pressure gas tank 6a in a short time.

[0092] [Third embodiment] The third embodiment will be described below. Elements with the same reference numerals as those in the first or second embodiment will have substantially the same configurations and functions as those described in the first or second embodiment unless otherwise specified, and differences from the first and second embodiments will be mainly described.

[0093] Fig. 4(b) is an explanatory diagram of a part of the configuration of a substrate processing system 100D according to the third embodiment. Note that in Fig. 4(b), the main pipes 71 and 72 of the circulation pipe 7 are not shown.

[0094] The high-pressure gas tank 6a is connected to both the outward pipe 7a and the return pipe 7b via a valve 12a. The valve 12a is an example of a second valve. The high-pressure gas tank 6a is connected to both the outward pipe 7a and the return pipe 7b of the circulation pipe 7 via a gas supply pipe 14. When the gas flow from the high-pressure gas tank 6a is taken as the reference, the gas supply pipe 14 branches into gas supply pipes 14a and 14b downstream of the valve 12a in the gas flow. The gas supply pipe 14a is connected to the outward pipe 7a, and the gas supply pipe 14b is connected to the return pipe 7b. Specifically, the gas supply pipe 14a is connected to the outward pipe 7a upstream of the gas flow relative to the valve 11a, and the gas supply pipe 14b is connected to a section A1 of the return pipe 7b between point P1 and the valve 11b.

[0095] The substrate processing system 100D of the third embodiment includes a flow meter 13d disposed in the outward piping 7a instead of the oxygen concentration meter 13a in FIG. 4(a). The flow meter 13d is used to measure the flow rate of the gas supplied to the intermediate chamber 2. The flow meter 13d is an example of a third measuring meter. The flow meter 13d is disposed downstream of the gas flow relative to the valve 11a, with respect to the flow of the gas circulated by the circulation system 4. That is, the flow meter 13d is disposed between the valve 11a and the intermediate chamber 2.

[0096] In step S1, the control device 90 monitors the oxygen concentration in the intermediate chamber 2 and also monitors the integrated value (integrated flow rate) of the gas flow rate to the intermediate chamber 2. When the intermediate chamber 2 is filled with N2 gas and the gas flow path in section A1 of the return piping 7b is filled with N2 gas, the control device 90 ends the first supply process and proceeds to the next step S2.

[0097] In step S10, the control device 90 monitors the oxygen concentration in the intermediate chamber 2 as in step S1, and also monitors the integrated value of the gas flow rate to the intermediate chamber 2. When the intermediate chamber 2 is filled with N2 gas and the gas flow path in section A1 of the return pipe 7b is filled with N2 gas, the control device 90 terminates the supply process and proceeds to the next step S11.

[0098] The control device 90 determines whether the gas flow path in section A1 of the return pipe 7b between the intermediate chamber 2 and the valve 11b is filled with N2 gas based on the measurement result of the flow meter 13d. Specifically, the control device 90 determines whether the integrated value of the gas flow rate measured by the flow meter 13d is equal to or greater than a predetermined value (second value). If the integrated value of the gas flow rate measured by the flow meter 13d is equal to or greater than the predetermined value (second value), the gas flow path in section A1 is filled with N2 gas. In steps S2 and S11, the control device 90 closes the valve 12a and opens the valve 11b, thereby circulating N2 gas between the intermediate chamber 2 and the circulation system 4 through the operation of the circulation system 4. That is, the control device 90 executes a process of circulating N2 gas between the intermediate chamber 2 and the circulation system 4 via the circulation pipe 7.

[0099] To specifically describe the monitoring process of steps S1 and S10, the control device 90 terminates the supply of high-pressure gas from the high-pressure gas tank 6a when the oxygen concentration measured by the oxygen concentration meter 13c becomes equal to or lower than a predetermined value (first value) and the integrated value (integrated flow rate) of the gas flow measured by the flow meter 13d becomes equal to or higher than a predetermined value (second value). That is, the control device 90 controls the valves 12a and 11b to close the valve 12a and open the valve 11b. The timing for counting the integrated value is preferably the timing when the valve 12a is opened. The predetermined value to be compared with the integrated value of the gas flow rate is set to, for example, the sum of the volume of the intermediate chamber 2 and the volume of the gas flow path of the return pipe 7b from the intermediate chamber 2 to the valve 11b.

[0100] In the third embodiment, whether the ambient gas in the gas flow path of section A1 of return piping 7b has been replaced with N2 gas is simply estimated from the integrated value of the gas flow rate measured by flowmeter 13d. Based on these monitoring results, the control device 90 proceeds to the next step S2 or S11. Therefore, immediately after starting the step S2 or S11, the oxygen concentration in the gas input to circulation system 4 decreases, and circulation system 4 can be operated stably.

[0101] As described above, in the third embodiment, as in the first embodiment, contamination of the atmosphere in the robot chamber 1 can be prevented. Furthermore, since high-pressure N2 gas can be supplied to the intermediate chamber 2 via the circulation piping 7, the atmosphere in the intermediate chamber 2 can be replaced with N2 gas in a short time. Since there is no need to use the first utility facility of the factory when replacing the atmosphere in the intermediate chamber 2 with N2 gas, the load on the first utility facility can be leveled. Furthermore, since there is no need to connect the container 102 that defines the intermediate chamber 2 to the first utility facility of the factory with a piping, the construction load can be reduced. Furthermore, the atmosphere in the gas flow path of the return piping 7b can also be replaced with N2 gas from the high-pressure gas tank 6a in a short time.

[0102] [Fourth embodiment] The fourth embodiment will be described below. Elements with the same reference symbols as those in the first, second, or third embodiment will have substantially the same configurations and functions as those described in the first, second, or third embodiment unless otherwise specified, and differences from the first, second, and third embodiments will be mainly described.

[0103] 5 is an explanatory diagram of a substrate processing system 100E according to a fourth embodiment. When processing a substrate S in the processing chamber 3, it may be undesirable if the first gas is mixed in the atmosphere of the processing chamber 3 at a concentration equal to or greater than a predetermined concentration. In this case, it is necessary to replace the atmosphere in the intermediate chamber 2 from the first gas with the second gas.

[0104] The circulation piping 8 of the fourth embodiment forms a gas flow path through which gas circulates via the processing chamber 3 and a gas flow path through which gas circulates via the intermediate chamber 2. The circulation piping 8 of the fourth embodiment further includes an outward piping 8a and a return piping 8b. The outward piping 8a is an example of a second outward piping. The return piping 8b is an example of a second return piping. The circulation system 5 recovers gas from the circulation piping 8 and returns the gas to the circulation piping 8, as described in the first embodiment.

[0105] The outbound pipe 8a is a pipe that connects the main pipe 81 and the container 102, and is connected to the main pipe 81 and the container 102. A valve 11d is arranged in the outbound pipe 8a. The return pipe 8b is a pipe that connects the main pipe 82 and the container 102, and is connected to the main pipe 82 and the container 102. A valve 11e is arranged in the return pipe 8b. The return pipe 8b has a point P2 upstream of the valve 11e. The point P2 is a branch point. A branch pipe 8c that branches off from the return pipe 8b is connected to the point P2 of the return pipe 8b. That is, the branch pipe 8c branches off from the return pipe 8b at a point P2 upstream of the valve 11e in the gas flow direction in the return pipe 8b. The branch pipe 8c is connected to the exhaust pipe 9. A valve 11f is arranged in the branch pipe 8c. The branch pipe 8c is an example of a second branch pipe. The valve 11e is an example of a third valve. The location P2 is an example of a second location.

[0106] The outward piping 8a is arranged on the upstream side of the gas flow relative to the intermediate chamber 2. The return piping 8b is arranged on the downstream side of the gas flow relative to the intermediate chamber 2.

[0107] Moreover, in the fourth embodiment, the substrate processing system 100E includes a high-pressure gas tank 6b that stores a second gas. The high-pressure gas tank 6b is an example of a second high-pressure gas supply unit. The high-pressure gas tank 6b is connected to a main pipe 81 of the circulation pipe 8 via a gas supply pipe 15. A valve 12b is disposed on the gas supply pipe 15. The valve 12b is an example of a fourth valve. The high-pressure gas tank 6b supplies the second gas, which has a higher pressure than the gas supplied by the circulation system 5, to the circulation pipe 8. In the fourth embodiment, the pressure of the second gas supplied by the high-pressure gas tank 6b is 0.4 MPa or more and 0.7 MPa or less.

[0108] The valves 11d, 11e, 11f, and 12b are configured to open and close the gas flow paths. The valves 11d, 11e, 11f, and 12b are flow control valves, and are configured to adjust the flow rate of gas flowing through the gas flow paths by adjusting the opening degree. The control device 90 is also configured to control the valves 11d, 11e, 11f, and 12b.

[0109] Hereinafter, some of the steps of a method for manufacturing an organic EL panel, which is an example of an article, will be described. Fig. 6 is a flowchart of a part of the manufacturing process for an article according to a fourth embodiment. The flowchart shown in Fig. 6 differs from the flowchart shown in Fig. 2 in that steps S21 and S22 are provided between steps S5 and S6.

[0110] In step S4, the control device 90 delivers the substrate S to a transfer mechanism (not shown) arranged in the intermediate chamber 2, and then retracts the robot RB from the intermediate chamber 2 and closes the gate valve 10a. This completes the transfer process (first transfer process) of the substrate S to the intermediate chamber 2. Next, in step S5, the control device 90 closes the valves 11a, 11b, and 11c, thereby bringing the intermediate chamber 2 and the circulation pipe 7 into a non-communicating state. That is, the control device 90 disconnects the circulation pipe 7 from the intermediate chamber 2.

[0111] In step S21, the control device 90 controls the valves 11d, 11f, and 12b to open them, thereby executing a second supply process to supply a high-pressure second gas from the high-pressure gas tank 6b to the intermediate chamber 2 via the gas supply pipe 15, the main pipe 81, and the outward pipe 8a. Note that the valve 11e is controlled to be closed. The second gas supplied from the high-pressure gas tank 6b has a higher pressure than the gas supplied by the circulation system 5. By opening the valves 11d, 11f, and 12b, the high-pressure second gas is supplied from the high-pressure gas tank 6b to the main pipe 81 via the gas supply pipe 15. Then, the second gas is supplied to the intermediate chamber 2 via the outward pipe 8a and the valve 11d.

[0112] In the fourth embodiment, in the second supply process of step S21, the valve 11e is closed, and therefore the atmospheric gas in the intermediate chamber 2 is exhausted to the exhaust pipe 9 via the return pipe 8b, the valve 11f, and the branch pipe 8c. As a result, the gas is not returned to the circulation system 5, and the atmosphere in the intermediate chamber 2 is gradually replaced with the second gas from the first gas.

[0113] That is, in step S21, the control device 90 controls the valves 11d, 11f, and 12b to open the valves 11d, 11f, and 12b while keeping the valve 11e closed, thereby performing a process of exhausting the gas in the intermediate chamber 2 from the intermediate chamber 2 to the exhaust pipe 9 via the branch pipe 8c without returning it to the circulation system 5. As described above, an atmosphere of the second gas is formed in the intermediate chamber 2 by the second gas supplied from the high-pressure gas tank 6b via the circulation pipe 8.

[0114] Here, in step S21, the gate valves 10a and 10b are in a closed state, that is, the robot chamber 1 and the intermediate chamber 2 are not in communication with each other, and the intermediate chamber 2 and the processing chamber 3 are not in communication with each other.

[0115] In this way, the atmospheric gas in the intermediate chamber 2 can be replaced with the second gas using the high-pressure gas tank 6b, thereby reducing the load on the second utility facility. Also, there is no need to lay piping for gas replacement between the second utility facility and the container 102. Furthermore, by using the high-pressure second gas from the high-pressure gas tank 6b for gas replacement of the atmosphere in the intermediate chamber 2, gas replacement of the atmosphere in the intermediate chamber 2 can be performed at high speed.

[0116] It is also conceivable to connect the high-pressure gas tank 6b directly to the intermediate chamber 2 via piping. However, it is expected that pressure will locally increase at the connection portion of the piping to the intermediate chamber 2 when high-pressure gas is supplied, and measures will be needed to create a connection structure that can withstand that pressure, and it will also be necessary to install a separate piping for connection to the intermediate chamber 2. In contrast, in the fourth embodiment, the second gas is supplied to the intermediate chamber 2 via the circulation piping 8, so there is no need to install a separate connection structure for connecting the high-pressure gas tank 6b to the container 102, and there is no need to install a separate piping, separate from the circulation piping 8, for directly connecting the high-pressure gas tank 6b to the intermediate chamber 2.

[0117] Next, when the intermediate chamber 2 is filled with the second gas by the processing of step S21, in step S22, the control device 90 controls the valves 12b and 11e to close the valve 12b and open the valve 11e. When the control device 90 closes the valve 12b and opens the valve 11e, the second gas is circulated between the intermediate chamber 2 and the circulation system 5 by the operation of the circulation system 5. That is, the control device 90 executes a process of circulating the second gas between the intermediate chamber 2 and the circulation system 5 via the circulation pipe 8.

[0118] Next, in step S6, the control device 90 opens the gate valve 10b to connect the intermediate chamber 2 and the processing chamber 3, and causes a transfer mechanism (not shown) to transfer the substrate S from the intermediate chamber 2 to the processing chamber 3. That is, the control device 90 executes a second transfer process to transfer the substrate S from the intermediate chamber 2 to the processing chamber 3. That is, the second supply process is executed after the first transfer process and before the second transfer process.

[0119] As described above, according to the fourth embodiment, contamination of the atmosphere in the processing chamber 3 can be prevented. Furthermore, since a high-pressure second gas can be supplied to the intermediate chamber 2 via the circulation piping 8, the atmosphere in the intermediate chamber 2 can be replaced with the second gas in a short time. Since there is no need to use the second utility equipment of the factory when replacing the atmosphere in the intermediate chamber 2 with the second gas, the load on the second utility equipment can be leveled. Furthermore, since there is no need to connect the container 102 that defines the intermediate chamber 2 to the second utility equipment of the factory with piping, the construction load can be reduced.

[0120] Furthermore, the circulation pipe 8 is connected to the intermediate chamber 2 in addition to the processing chamber 3. The inner diameter of the circulation pipe 8 (diameter of the gas flow path) is approximately 200 mm to 300 mm, and the circulation system 5 can circulate low-pressure gas at a large volume. This allows the gas concentration in the atmospheres of the processing chamber 3 and the intermediate chamber 2 to be kept constant. In the fourth embodiment, the circulation pipe 8 is used to replace the gas in the atmosphere of the intermediate chamber 2 using the high-pressure gas tank 6b. This eliminates the need to install a separate piping system to connect the high-pressure gas tank 6b to the intermediate chamber 2. In this way, the second gas can be supplied from the high-pressure gas tank 6b to the intermediate chamber 2 via the circulation pipe 8, thereby reducing the construction load.

[0121] Although the example has been described in which the circulation pipe 8 has main pipes 81 and 82, and the high-pressure gas tank 6b is connected to the main pipe 81 via the gas supply pipe 15, and is thereby connected to the outbound pipe 8a via the main pipe 81, the present invention is not limited to this. For example, the high-pressure gas tank 6b may be connected to the outbound pipe 8a without going through the main pipe 81.

[0122] In addition, although the case where the robot chamber 1 is the first chamber and the processing chamber 3 is the second chamber, i.e., the container 101 is the first container and the container 103 is the second container, has been described, the present invention is not limited to this. For example, the processing chamber 3 may be the first chamber and the robot chamber 1 may be the second chamber, i.e., the container 103 may be the first container and the container 101 may be the second container.

[0123] Furthermore, the number of containers included in the substrate processing system 100E is not limited to three, and for example, the substrate processing system 100E of the fourth embodiment can be modified in the same manner as the first or second modification of the first embodiment.

[0124] [Fifth embodiment] The fifth embodiment will be described. Below, elements with the same reference symbols as those in the first, second, third, or fourth embodiment will have substantially the same configurations and functions as those described in the first, second, third, or fourth embodiment unless otherwise specified, and differences from the first, second, third, and fourth embodiments will be mainly described.

[0125] Fig. 7(a) is an explanatory view of a portion of the configuration of a substrate processing system 100F according to a fifth embodiment. Note that, in Fig. 7(a), the main pipes 81 and 82 of the circulation pipe 8 are not shown. In the fifth embodiment, the second gas is CDA gas.

[0126] There are cases where precision in the time required for replacing the atmosphere in the intermediate chamber 2 with the second gas or in the gas concentration of the atmosphere is not required. In such cases, it is possible to use a substrate processing system 100F having a simpler configuration than the substrate processing system 100E of the fourth embodiment. That is, in the substrate processing system 100F, the high-pressure gas tank 6b, the gas supply pipe 15, and the valve 12b are omitted from the substrate processing system 100E shown in FIG.

[0127] In FIG. 7( a ), the atmosphere in the intermediate chamber 2 is replaced with a second gas by the circulation system 5 via the circulation piping 8 .

[0128] The outgoing pipe 8a is connected to the intermediate chamber 2 via a valve 11d. The return pipe 8b is connected to the intermediate chamber 2 via a valve 11e. The circulation system 5 is connected to the return pipe 8b.

[0129] A dew point meter 16a is disposed in the return pipe 8b to monitor the atmosphere inside the return pipe 8b. The dew point meter 16a is an example of a measuring meter, and is disposed in the return pipe 8b upstream of the valve 11e. That is, the dew point meter 16a is disposed between the point P2 in the return pipe 8b and the valve 11e.

[0130] In step S21, the control device 90 monitors the moisture content of the gas using the dew point meter 16a. If the moisture concentration in the atmosphere of the intermediate chamber 2 is high, that is, if the value of the dew point meter 16a exceeds a predetermined value, the gas contained in the atmosphere of the intermediate chamber 2 is not returned to the circulation system 5 but is exhausted to the exhaust pipe 9 via the branch pipe 8c. Then, after the concentration of the second gas in the atmosphere of the intermediate chamber 2 is kept constant, the gas is returned to the circulation system 5, and the gas circulates between the intermediate chamber 2 and the circulation system 4.

[0131] In this way, when the substrate S is processed in the processing chamber 3 under an atmosphere of CDA gas, the atmosphere in the intermediate chamber 2 can be monitored in terms of moisture by using the dew point meter 16a.

[0132] [Sixth embodiment] The sixth embodiment will be described. Below, elements with the same reference symbols as those in the first, second, third, fourth, or fifth embodiment will have substantially the same configurations and functions as those described in the first, second, third, fourth, or fifth embodiment unless otherwise specified, and differences from the first, second, third, fourth, and fifth embodiments will be mainly described.

[0133] Fig. 7(b) is an explanatory view of a part of the configuration of a substrate processing system 100G according to the sixth embodiment, in which the main pipes 81 and 82 of the circulation pipe 8 are not shown.

[0134] The substrate processing system 100G shown in FIG. 7(b) is a further simplified version of the substrate processing system 100F shown in FIG. 7(a).

[0135] 7(a), a substrate processing system 100G includes a flow meter 16b disposed in the outward piping 7a. The flow meter 16b is used to measure the flow rate of the gas supplied to the intermediate chamber 2. The flow meter 16b is disposed downstream of the gas flow relative to the valve 11d, with respect to the flow of the gas circulated by the circulation system 5. That is, the flow meter 16b is disposed between the valve 11d and the intermediate chamber 2.

[0136] In step S21, the control device 90 monitors the integrated value (integrated flow rate) of the gas flow rate to the intermediate chamber 2. When the integrated value (integrated flow rate) of the gas flow rate measured by the flow meter 16b becomes equal to or greater than a predetermined value, the control device 90 controls the valve 11e to open the valve 11e. The predetermined value to be compared with the integrated value of the gas flow rate is set to, for example, the sum of the volume of the intermediate chamber 2 and the volume of the gas flow path of the return pipe 8b from the intermediate chamber 2 to the valve 11e.

[0137] In the sixth embodiment, whether the ambient gas in the gas flow passage of the intermediate chamber 2 and the return pipe 8b has been replaced with the second gas is simply estimated from the integrated value of the gas flow rate measured by the flow meter 16b.

[0138] [Seventh embodiment] The seventh embodiment will be described. Below, elements with the same reference symbols as those in the first, second, third, fourth, fifth, or sixth embodiment will have substantially the same configurations and functions as those described in the first, second, third, fourth, fifth, or sixth embodiment unless otherwise specified, and differences from the first, second, third, fourth, fifth, and sixth embodiments will be mainly described.

[0139] Fig. 8(a) is an explanatory view of a part of the configuration of a substrate processing system 100H according to the seventh embodiment. Note that in Fig. 8(a), the main pipes 81 and 82 of the circulation pipe 8 are not shown.

[0140] The substrate processing system 100H of the seventh embodiment is obtained by applying the dew-point meter 16a of the fifth embodiment to the substrate processing system 100E of the fourth embodiment. That is, the substrate processing system 100H of the seventh embodiment is obtained by applying the high-pressure gas tank 6b, the gas supply pipe 15, and the valve 12b of the fourth embodiment to the substrate processing system 100F of the fifth embodiment. The second gas is CDA gas.

[0141] With the above configuration, similar to the second embodiment, it is possible to reduce the time required to replace the atmosphere in the intermediate chamber 2 with the second gas.

[0142] [Eighth embodiment] An eighth embodiment will be described. Below, elements with the same reference symbols as those in the first, second, third, fourth, fifth, sixth, or seventh embodiment will have substantially the same configurations and functions as those described in the first, second, third, fourth, fifth, sixth, or seventh embodiment unless otherwise specified, and differences from the first, second, third, fourth, fifth, sixth, and seventh embodiments will be mainly described.

[0143] Fig. 8(b) is an explanatory view of a part of the configuration of a substrate processing system 100I according to the eighth embodiment. Note that in Fig. 8(b), the main pipes 81 and 82 of the circulation pipe 8 are not shown.

[0144] The substrate processing system 100I of the eighth embodiment is obtained by applying the flow meter 16b of the sixth embodiment to the substrate processing system 100E of the fourth embodiment. That is, the substrate processing system 100I of the eighth embodiment is obtained by applying the high-pressure gas tank 6b, the gas supply pipe 15, and the valve 12b of the fourth embodiment to the substrate processing system 100G of the sixth embodiment. The second gas is CDA gas.

[0145] Even with the simplified configuration of the substrate processing system 100I described above, the time required to replace the atmosphere in the intermediate chamber 2 with the second gas can be reduced.

[0146] [Embodiment of manufacturing method of article] The method for manufacturing an article according to an embodiment of the present disclosure is suitable for manufacturing an article such as an organic light-emitting diode (OLED) panel using one of the substrate processing systems 100-100I. The method for manufacturing an article according to this embodiment includes a step (coating step) of depositing or applying a solution film (a solution containing a solute and a solvent for forming an organic film) on a substrate by a printing method using an inkjet printing device or the like to obtain a coated substrate. It also includes a step (drying step) of drying the solution film on the coated substrate using the drying device to obtain a dried substrate on which a dry film has been formed. Furthermore, this manufacturing method includes other well-known steps (such as baking, cooling, dehumidification, dry cleaning, electrode formation, and sealing film formation). The method for manufacturing an article according to this embodiment is advantageous over conventional methods in at least one of the performance, quality, productivity, and production cost of the article.

[0147] [Other variations] The present disclosure is not limited to the above-described embodiments, and many modifications of the embodiments are possible within the technical concept of the present disclosure. For example, at least two of the above-described embodiments and modifications may be combined. Furthermore, the effects described in the present embodiments are merely a list of the most preferable effects resulting from the embodiments of the present disclosure, and the effects of the embodiments of the present disclosure are not limited to those described in the present embodiments.

[0148] The disclosure of the above embodiments includes the following sections.

[0149] (Section 1) a first container having a first chamber to which a first gas is supplied; a second container having a second chamber to which a second gas different from the first gas is supplied; an intermediate container connected to the first container and the second container and having an intermediate chamber that can communicate with each of the first chamber and the second chamber; a first circulation pipe that forms a gas flow path through which gas circulates via the first chamber and a gas flow path through which gas circulates via the intermediate chamber; a first circulation system that recovers gas from the first circulation piping and returns the gas to the first circulation piping; the first circulation pipe includes a first outward pipe that is disposed upstream of the intermediate chamber in the gas flow direction and connected to the intermediate container, and a first return pipe that is disposed downstream of the intermediate chamber in the gas flow direction and connected to the intermediate container, a first high-pressure gas supply unit connected to the first circulation pipe and supplying the first gas at a pressure higher than that of the gas supplied by the first circulation system; a control unit, The control unit a first supply process of supplying the first gas from the first high-pressure gas supply unit to the intermediate chamber via the first outward piping while the first chamber and the intermediate chamber are not in communication with each other; After filling the intermediate chamber with the first gas, the first chamber and the intermediate chamber are communicated with each other, and a first transfer process is performed to transfer a substrate from the first chamber to the intermediate chamber. A substrate processing system comprising:

[0150] (Section 2) the control unit executes the first supply process in a state where the second chamber and the intermediate chamber are not in communication with each other. Item 1. A substrate processing system according to item 1.

[0151] (Section 3) the second gas is a gas containing oxygen, Further provided is a first measuring meter that measures the oxygen concentration in the intermediate chamber, the control unit determines whether the intermediate chamber is filled with the first gas based on a measurement result of the first measuring meter. 3. The substrate processing system according to item 2,

[0152] (Section 4) the first measuring meter is connected to the intermediate container; Item 4. A substrate processing system according to item 3.

[0153] (Section 5) the control unit executes a process of exhausting the gas in the intermediate chamber from the intermediate chamber without returning the gas to the first circulation system in the first supply process. 5. The substrate processing system according to any one of items 1 to 4, characterized in that:

[0154] (Section 6) Further, a first valve is disposed in the first return pipe, In the first supply process, the first valve is in a closed state. Item 6. A substrate processing system according to item 5, characterized in that:

[0155] (Section 7) the first return line has a first location upstream of the first valve in the gas flow direction; Further provided is a first branch pipe branching from the first location, In the first supply process, the gas in the intermediate chamber is exhausted through the first branch pipe. Item 7. A substrate processing system according to item 6, characterized in that:

[0156] (Section 8) the first high-pressure gas supply unit is connected to the first outbound piping and the first return piping between the first valve and the first location via second valves, In the first supply process, the control unit controls the second valve to open the second valve, thereby supplying the first gas to the first high-pressure gas supply unit between the first valve and the first location on the first return line and to the intermediate chamber. 8. The substrate processing system according to item 7,

[0157] (Section 9) the control unit opens the first valve after the intermediate chamber is filled with the first gas and a gas flow path in the first return pipe between the intermediate chamber and the first valve is filled with the first gas. Item 9. A substrate processing system according to item 8.

[0158] (Section 10) a second measuring meter that measures the oxygen concentration in the gas flow path between the first valve and the first location in the first return pipe; the control unit determines whether a gas flow path in the first return pipe between the intermediate chamber and the first valve is filled with the first gas based on a measurement result of the second measuring instrument. Item 10. A substrate processing system according to item 9, characterized in that:

[0159] (Section 11) The second measuring instrument is disposed between the first valve and the first location of the first return pipe. Item 11. A substrate processing system according to item 10.

[0160] (Section 12) a third measuring meter that measures the flow rate of the gas supplied to the intermediate chamber; the control unit determines whether a gas flow path in the first return pipe between the intermediate chamber and the first valve is filled with the first gas based on a measurement result of the third measuring instrument. Item 10. A substrate processing system according to item 9, characterized in that:

[0161] (Section 13) The third measuring instrument is disposed on the first outbound piping. Item 13. A substrate processing system according to item 12.

[0162] (Section 14) The pressure of the first gas supplied by the first high-pressure gas supply unit is 0.4 MPa or more and 0.7 MPa or less. 14. The substrate processing system according to any one of items 1 to 13,

[0163] (Section 15) the control unit circulates gas between the first circulation system and the intermediate chamber via the first circulation piping in the first transfer process. 15. The substrate processing system according to any one of items 1 to 14,

[0164] (Section 16) The control unit performing a second transfer process of transferring the substrate from the intermediate chamber to the second chamber while the intermediate chamber and the first circulation pipe are not in communication with each other; 16. The substrate processing system according to any one of items 1 to 15,

[0165] (Section 17) The control unit a second supply process is performed after the first transfer process and before the second transfer process, in which the second gas is supplied to the intermediate chamber to replace the atmosphere in the intermediate chamber with the second gas. Item 17. A substrate processing system according to item 16, characterized in that:

[0166] (Section 18) a second circulation pipe that forms a gas flow path through which gas circulates via the second chamber and a gas flow path through which gas circulates via the intermediate chamber; a second circulation system that recovers gas from the second circulation piping and returns the gas to the second circulation piping; the second circulation pipe includes a second outward pipe connected to an upstream side of the gas flow relative to the intermediate chamber, and a second return pipe connected to a downstream side of the gas flow relative to the intermediate chamber, a second high-pressure gas supply unit connected to the second circulation pipe and supplying the second gas at a pressure higher than that of the gas supplied by the second circulation system; The control unit In the second supply process, the second gas is supplied from the second high-pressure gas supply unit to the intermediate chamber via the second outward piping while the second chamber and the intermediate chamber are not in communication with each other. Item 18. A substrate processing system according to item 17.

[0167] (Section 19) the control unit executes a process of exhausting the gas in the intermediate chamber from the intermediate chamber without returning the gas to the second circulation system in the second supply process. Item 19. A substrate processing system according to item 18.

[0168] (Section 20) Further, a third valve is disposed in the second return line, In the second supply process, the control unit controls the third valve to close the third valve. 20. A substrate processing system according to item 19, characterized in that:

[0169] (Section 21) the first chamber is a robot chamber in which a robot that transports the substrate is disposed, the second chamber is a processing chamber used to process the substrate; 21. The substrate processing system according to any one of items 1 to 20,

[0170] (Section 22) Item 21. A method for processing a substrate using the substrate processing system according to any one of items 1 to 21. A method for manufacturing an article. [Explanation of symbols]

[0171] S...substrate, 1...robot chamber (first chamber), 2...intermediate chamber, 3...processing chamber (second chamber), 4...circulation system (first circulation system), 5...circulation system (second circulation system), 6a...high-pressure gas tank (first high-pressure gas supply unit), 6b...high-pressure gas tank (second high-pressure gas supply unit), 7...circulation piping (first circulation piping), 7a...outgoing piping (first outgoing piping), 7b...returning piping (first returning piping), 7c...branching piping (first branching piping), 8...circulation piping (second circulation piping), 8a...outgoing piping (second outgoing piping), 8b...returning piping (second returning piping), 8c...branching piping (second branching piping), 9...exhaust piping, 90...control device (controller), 100...substrate processing system, 101...container (first container), 102...container (intermediate container), 103...container (second container)

Claims

1. a first container having a first chamber to which a first gas is supplied; a second container having a second chamber to which a second gas different from the first gas is supplied; an intermediate container connected to the first container and the second container and having an intermediate chamber that can communicate with each of the first chamber and the second chamber; a first circulation pipe that forms a gas flow path through which gas circulates via the first chamber and a gas flow path through which gas circulates via the intermediate chamber; a first circulation system that recovers gas from the first circulation piping and returns the gas to the first circulation piping; the first circulation pipe includes a first outward pipe that is disposed upstream of the intermediate chamber in the gas flow direction and connected to the intermediate container, and a first return pipe that is disposed downstream of the intermediate chamber in the gas flow direction and connected to the intermediate container, a first high-pressure gas supply unit connected to the first circulation pipe and supplying the first gas at a pressure higher than that of the gas supplied by the first circulation system; a control unit, The control unit a first supply process of supplying the first gas from the first high-pressure gas supply unit to the intermediate chamber via the first outward piping while the first chamber and the intermediate chamber are not in communication with each other; and performing a first transfer process of filling the intermediate chamber with the first gas, and then communicating the first chamber with the intermediate chamber, and transferring a substrate from the first chamber to the intermediate chamber. A substrate processing system comprising:

2. the control unit executes the first supply process in a state where the second chamber and the intermediate chamber are not in communication with each other. The substrate processing system according to claim 1 .

3. the second gas is a gas containing oxygen, a first measuring meter for measuring the oxygen concentration in the intermediate chamber; the control unit determines whether the intermediate chamber is filled with the first gas based on a measurement result of the first measuring meter.

3. The substrate processing system according to claim 2.

4. the first measuring instrument is connected to the intermediate vessel; 4. The substrate processing system according to claim 3.

5. the control unit executes a process of exhausting the gas in the intermediate chamber from the intermediate chamber without returning the gas to the first circulation system in the first supply process. The substrate processing system according to claim 1 .

6. Further, a first valve is disposed in the first return pipe, In the first supply process, the first valve is in a closed state.

6. The substrate processing system according to claim 5.

7. the first return line has a first location upstream of the first valve in the gas flow direction; Further provided is a first branch pipe branching from the first location, In the first supply process, the gas in the intermediate chamber is exhausted through the first branch pipe.

7. The substrate processing system according to claim 6.

8. the first high-pressure gas supply unit is connected to the first outgoing piping and the first return piping between the first valve and the first location via second valves, In the first supply process, the control unit controls the second valve to open the second valve, thereby causing the first high-pressure gas supply unit to supply the first gas to a portion of the first return line between the first valve and the first location and to the intermediate chamber. The substrate processing system according to claim 7 .

9. the control unit opens the first valve after the intermediate chamber is filled with the first gas and a gas flow path in the first return pipe between the intermediate chamber and the first valve is filled with the first gas. The substrate processing system according to claim 8 .

10. a second measuring meter that measures the oxygen concentration in the gas flow path between the first valve and the first location in the first return pipe; the control unit determines whether a gas flow path in the first return pipe between the intermediate chamber and the first valve is filled with the first gas based on a measurement result of the second measuring instrument. The substrate processing system according to claim 9 .

11. The second measuring instrument is disposed between the first valve and the first location of the first return pipe. The substrate processing system according to claim 10 .

12. a third measuring meter that measures a flow rate of the gas supplied to the intermediate chamber; the control unit determines whether a gas flow path in the first return pipe between the intermediate chamber and the first valve is filled with the first gas based on a measurement result of the third measuring instrument. The substrate processing system according to claim 9 .

13. The third measuring instrument is disposed on the first outbound piping. The substrate processing system according to claim 12 .

14. The pressure of the first gas supplied by the first high-pressure gas supply unit is 0.4 MPa or more and 0.7 MPa or less. The substrate processing system according to claim 1 .

15. the control unit circulates gas between the first circulation system and the intermediate chamber via the first circulation piping in the first transfer process. The substrate processing system according to claim 1 .

16. The control unit performing a second transfer process of transferring the substrate from the intermediate chamber to the second chamber while the intermediate chamber and the first circulation pipe are not in communication with each other; The substrate processing system according to claim 1 .

17. The control unit a second supply process is performed after the first transfer process and before the second transfer process, in which the second gas is supplied to the intermediate chamber to replace the atmosphere in the intermediate chamber with the second gas. The substrate processing system according to claim 16 .

18. a second circulation pipe that forms a gas flow path through which gas circulates via the second chamber and a gas flow path through which gas circulates via the intermediate chamber; a second circulation system that recovers gas from the second circulation piping and returns the gas to the second circulation piping; the second circulation pipe includes a second outward pipe connected to an upstream side of the intermediate chamber in a gas flow direction, and a second return pipe connected to a downstream side of the intermediate chamber in a gas flow direction, a second high-pressure gas supply unit connected to the second circulation pipe and supplying the second gas at a pressure higher than that of the gas supplied by the second circulation system; The control unit In the second supply process, the second gas is supplied from the second high-pressure gas supply unit to the intermediate chamber via the second outward piping while the second chamber and the intermediate chamber are not in communication with each other.

18. The substrate processing system according to claim 17.

19. the control unit executes a process of exhausting the gas in the intermediate chamber from the intermediate chamber without returning the gas to the second circulation system in the second supply process.

20. The substrate processing system of claim 18.

20. Further, a third valve is disposed in the second return line, In the second supply process, the control unit controls the third valve to close the third valve.

20. The substrate processing system of claim 19.

21. the first chamber is a robot chamber in which a robot that transports the substrate is disposed, the second chamber is a processing chamber used to process the substrate; The substrate processing system according to claim 1 .

22. Processing a substrate using the substrate processing system of any one of claims 1 to 21. A method for manufacturing an article.

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