Substrate processing apparatus

Abstract

To provide a technique for enhancing the capability of adjusting the temperature of a substrate in a substrate processing apparatus.SOLUTION: The substrate processing apparatus includes a chamber, a substrate support, and one or more supply pipes. The substrate support is disposed in the chamber. The substrate support includes an upper surface and a lower surface opposite the upper surface. The upper surface supports a substrate placed thereon. Each of the one or more supply pipes has a nozzle and a flow path. The nozzle provides a nozzle hole opening toward the lower surface to supply the heat transfer medium to the lower surface. The flow path is connected to the nozzle hole to supply the heat transfer medium to the nozzle hole. The lower surface and the nozzle hole face each other in the first direction. The second direction intersects the first direction. The width of the nozzle hole in the second direction is smaller than the width of the flow path in the second direction.SELECTED DRAWING: Figure 6

Description

[Technical Field]

[0001] SUMMARY OF THE INVENTION An exemplary embodiment of the present disclosure relates to a substrate processing apparatus. [Background technology]

[0002] Substrate processing apparatuses may include a substrate support unit capable of controlling the temperature of a substrate placed thereon. The substrate processing apparatus described in Patent Document 1 below controls the temperature of the substrate by supplying a heat transfer medium adjusted to a first temperature and a heat transfer medium adjusted to a second temperature higher than the first temperature to the substrate support unit. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2016-12593 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides techniques that enhance the ability to regulate the temperature of substrates in substrate processing apparatus. [Means for solving the problem]

[0005] In one exemplary embodiment, a substrate processing apparatus is provided. The substrate processing apparatus includes a chamber, a substrate support, and one or more supply pipes. The substrate support is disposed within the chamber. The substrate support includes an upper surface and a lower surface opposite the upper surface. The upper surface supports a substrate placed thereon. Each of the one or more supply pipes has a nozzle and a flow path. The nozzle provides a nozzle hole that opens toward the lower surface to supply a heat transfer medium to the lower surface. The flow path is connected to the nozzle hole to supply the heat transfer medium to the nozzle hole. The lower surface and the nozzle hole face each other in a first direction. The second direction intersects with the first direction. The width of the nozzle hole in the second direction is smaller than the width of the flow path in the second direction. [Effects of the Invention]

[0006] According to one exemplary embodiment, the ability to regulate the temperature for a substrate in a substrate processing apparatus is enhanced. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a diagram illustrating an example of the configuration of a plasma processing system. [Figure 2] FIG. 2 is a diagram illustrating an example of the configuration of a capacitively coupled plasma processing apparatus. [Figure 3] FIG. 3 is an enlarged cross-sectional view of a portion of a substrate support according to one example embodiment. [Figure 4] FIG. 4 is an exploded perspective view of a substrate support according to one exemplary embodiment. [Figure 5] FIG. 5(a) is a plan view of an example of a cell of a heat exchanger, and FIG. 5(b) is a perspective view of an example of a cell of a heat exchanger. [Figure 6] FIG. 6 is an enlarged cross-sectional view of a portion of one supply tube according to one exemplary embodiment. [Figure 7] FIG. 7 is an enlarged cross-sectional view of a portion of a substrate support according to another exemplary embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0008] Various exemplary embodiments will be described in detail below with reference to the drawings, in which the same or equivalent parts are designated by the same reference numerals.

[0009] FIG. 1 is a diagram illustrating an exemplary configuration of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing device 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing device 1 is an example of a substrate processing device. The plasma processing device 1 includes a plasma processing chamber 10, a substrate support 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20 (described later), and the gas exhaust port is connected to an exhaust system 40 (described later). The substrate support 11 is disposed in the plasma processing space and has a substrate support surface for supporting a substrate.

[0010] The plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron-cyclotron-resonance plasma (ECR plasma), helicon wave plasma (HWP), or surface wave plasma (SWP). Various types of plasma generating units may be used, including alternating current (AC) plasma generating units and direct current (DC) plasma generating units. In one embodiment, the AC signal (AC power) used in the AC plasma generating unit has a frequency in the range of 100 kHz to 10 GHz. Therefore, the AC signal includes a radio frequency (RF) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0011] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described in this disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 may be implemented by, for example, a computer 2a. The processing unit 2a1 may be configured to read a program from the storage unit 2a2 and execute the read program to perform various control operations. The program may be stored in the storage unit 2a2 in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 by the processing unit 2a1 for execution. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a random access memory (RAM), a read only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0012] The following describes a configuration example of a capacitively coupled plasma processing apparatus as an example of the plasma processing apparatus 1. Fig. 2 is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus.

[0013] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one process gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0014] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.

[0015] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that the annular region 111b may also be provided by another member surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. Furthermore, at least one RF / DC electrode coupled to an RF power supply 31 and / or a DC power supply 32, which will be described later, may be disposed within the ceramic member 1111a. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal, which will be described later, is supplied to the at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. Note that the conductive member of the base 1110 and the at least one RF / DC electrode may function as multiple lower electrodes. Alternatively, the electrostatic electrode 1111b may function as a lower electrode. Therefore, the substrate support 11 includes at least one lower electrode.

[0016] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0017] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow passage 1110a, or a combination thereof. A heat transfer fluid such as brine or a gas flows through the flow passage 1110a. In one embodiment, the flow passage 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. The substrate support 11 may also include a heat transfer gas supply configured to supply a heat transfer gas to a gap between the backside of the substrate W and the central region 111a.

[0018] The showerhead 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas introduction unit may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0019] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the showerhead 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of the at least one process gas.

[0020] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates a plasma from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generation unit 12. Furthermore, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, and ion components in the formed plasma can be attracted to the substrate W.

[0021] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0022] The second RF generating unit 31b is coupled to at least one lower electrode via at least one impedance matching circuit and configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generating unit 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0023] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to at least one lower electrode and configured to generate a first DC signal. The generated first DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 32b is connected to at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0024] In various embodiments, the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof. In one embodiment, a waveform generator for generating a sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode. Thus, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have either positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one period. The first and second DC generating units 32a and 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided instead of the second RF generating unit 31b.

[0025] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve regulates the pressure in the plasma processing space 10s. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0026] The substrate support 11 will now be described in detail with reference to Figure 3. As described above, the substrate support 11 is disposed within the chamber 10. Figure 3 is an enlarged cross-sectional view of a portion of the substrate support according to one exemplary embodiment.

[0027] The substrate support 11 has a substantially circular disk shape. As shown in FIG. 3 , the substrate support 11 includes an upper surface 14 and a lower surface 15 opposite the upper surface 14. In one embodiment, the upper surface 14 includes a first central region 14a and a first annular region 14b. The first central region 14a supports the substrate W placed thereon. The central region 111a described above is an example of the first central region 14a. The first annular region 14b supports the ring assembly 112 placed thereon. The first annular region 14b surrounds the first central region 14a. The height of the first annular region 14b may be lower than the height of the first central region 14a. The annular region 111b described above is an example of the first annular region 14b.

[0028] 3, the first central region 14a is the upper surface of the electrostatic chuck 1111. The first annular region 14b is a peripheral region of the upper surface of the base 1110. Note that the first annular region 14b may also be the upper surface of the electrostatic chuck 1111. The electrostatic chuck 1111 in the first annular region 14b may include a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a.

[0029] The lower surface 15 is the surface opposite to the upper surface 14. For example, the lower surface 15 is the lower surface of the base 1110. In one embodiment, the lower surface 15 includes a second central region 15a and a second annular region 15b. The second central region 15a is the region opposite to the first central region 14a. The second annular region 15b is the region opposite to the first annular region 14b. The lower surface 15 may also be the lower surface of the electrostatic chuck 1111.

[0030] The substrate support 11 may include one or more partition walls 15c. In the example shown in Fig. 3, the one or more partition walls 15c include a plurality of partition walls 15c. Hereinafter, unless otherwise specified, the partition walls 15c will be described as a plurality of partition walls 15c. The partition walls 15c extend downward from the lower surface 15. The lower surface 15 and the partition walls 15c define a space.

[0031] The plasma processing apparatus 1 includes one or more supply pipes 50. The one or more supply pipes 50 are arranged below the lower surface 15. Each of the one or more supply pipes 50 has a nozzle 51 and a flow path 52. The nozzle 51 is configured to supply a heat transfer medium to the lower surface 15. The nozzle 51 is arranged in a space defined by the lower surface 15 and the partition wall 15c. The nozzle 51 and the lower surface 15 face each other in a first direction D1. In the example shown in FIG. 3, the first direction D1 is along the vertical direction. The flow path 52 is connected to the nozzle 51 to supply the heat transfer medium to the nozzle 51. The nozzle 51 is arranged at an end of the flow path 52. In one example, the flow path 52 is provided in a pipe connected to the nozzle 51. The heat transfer medium supplied to the nozzle 51 is sprayed onto the lower surface 15. In the example shown in FIG. 3, the one or more supply pipes 50 include a plurality of supply pipes 50. In the following description, one or more supply pipes 50 will be referred to as a plurality of supply pipes 50 unless otherwise specified.

[0032] In one embodiment, each of the one or more supply pipes 50 may include a recovery section 53. The recovery section 53 is configured to recover the heat transfer medium sprayed onto the lower surface 15. In the example shown in FIG. 3, the upper end of the recovery section 53 is connected to the lower end of each of the partition walls 15c. The lower surface 15, the plurality of partition walls 15c, and the plurality of recovery sections 53 define a plurality of spaces. The upper end of the recovery section 53 may extend to surround the periphery of the flow path 52.

[0033] FIG. 4 is an exploded perspective view of a substrate support according to an exemplary embodiment. The substrate support 11 may include a heat exchanger 5. A base 1110 may be disposed on the heat exchanger 5. In an embodiment, one or more supply pipes 50 constitute the heat exchanger 5. FIG. 5(a) is a plan view of an exemplary heat exchanger cell, and FIG. 5(b) is a perspective view of an exemplary heat exchanger cell. The heat exchanger 5 will be described below with reference to FIGS. 3, 4, 5(a), and 5(b).

[0034] 4, the heat exchanger 5 is provided with a plurality of supply pipes 50. Each of the plurality of cells 5c is configured with at least one corresponding supply pipe 50 from among the plurality of supply pipes 50. The number of supply pipes 50 included in each of the plurality of cells 5c may be one or more.

[0035] 3 and 4, in one embodiment, the one or more supply pipes 50 include a first supply pipe 50a and a second supply pipe 50b. The first supply pipe 50a is disposed below the second central region 15a. The second supply pipe 50b is disposed below the second annular region 15b. The one or more supply pipes 50 may include a plurality of first supply pipes 50a. The one or more supply pipes 50 may include a plurality of second supply pipes 50b.

[0036] The first supply pipe 50a includes a first nozzle 51a and a first flow path 52a. The first nozzle 51a is configured to supply the heat transfer medium to the second central region 15a. The first nozzle 51a is disposed in a space defined by the second central region 15a and the partition wall 15c. The first flow path 52a is connected to the first nozzle 51a to supply the heat transfer medium to the first nozzle 51a. The heat transfer medium supplied to the first nozzle 51a is sprayed onto the second central region 15a. The first supply pipe 50a may include a first recovery unit 53a. The first recovery unit 53a is configured to recover the heat transfer medium sprayed onto the second central region 15a. An upper end of the first recovery unit 53a may extend to surround the first flow path 52a.

[0037] The second supply pipe 50b includes a second nozzle 51b and a second flow path 52b. The second nozzle 51b is configured to supply the heat transfer medium to the second annular region 15b. The second nozzle 51b is disposed in a space defined by the second annular region 15b and the partition wall 15c. The second flow path 52b is connected to the second nozzle 51b to supply the heat transfer medium to the second nozzle 51b. The heat transfer medium supplied to the second nozzle 51b is sprayed onto the second annular region 15b. The second supply pipe 50b may include a second recovery section 53b. The second recovery section 53b is configured to recover the heat transfer medium sprayed onto the second annular region 15b. An upper end of the second recovery section 53b may extend to surround the second flow path 52b.

[0038] The first nozzle 51a and the second nozzle 51b are an example of the nozzle 51. The first flow path 52a and the second flow path 52b are an example of the flow path 52. The first recovery unit 53a and the second recovery unit 53b are an example of the recovery unit 53.

[0039] As shown in Figures 4, 5(a), and 5(b), each of the multiple cells 5c may have a substantially rectangular planar shape in plan view, the width of which increases from the center of the heat exchanger 5 toward the outside. Each of the multiple cells 5c provides a substantially rectangular space in plan view. The planar shape of the multiple cells 5c is not limited to a rectangle, and may be a circle or a polygon such as a triangle or hexagon. In one example, the outer shape of each of the multiple cells 5c is determined by the outer shape of the collection section 53. The shape of each of the multiple cells 5c in plan view may be the shape of the upper end of the collection section 53.

[0040] The heat exchanger 5 may be formed from a material containing resin, ceramic, or metal as a main component. The heat exchanger 5 may be formed from a material having low thermal conductivity, such as ceramic or resin, in order to suppress the influence of adjacent cells 5c. The heat exchanger 5 may be formed from a different material in part to partially change the strength and / or thermal conductivity of the heat exchanger 5. The heat exchanger 5 may be formed from the same material as the base 1110. The base 1110 and the heat exchanger 5 may be integrally formed using, for example, a 3D printer.

[0041] A heat transfer medium circulator may be connected to the heat exchanger 5. In one example, the circulator is a chiller unit. The circulator adjusts the temperature of the heat transfer medium. The heat transfer medium is supplied from the circulator to the flow path 52. The heat transfer medium recovered from the recovery section 53 is returned to the circulator. A valve may be disposed between the circulator and the flow path 52 to adjust the flow rate of the heat transfer medium supplied to the flow path 52. The heat transfer medium is a liquid or a gas. The liquid may be water, a fluorinated liquid, or an alcohol. The gas may be a noble gas, nitrogen, or air.

[0042] FIG. 6 is an enlarged cross-sectional view of a portion of a supply pipe according to an exemplary embodiment. The configuration of each of the one or more supply pipes 50 will be described in detail below with reference to FIG. 6. As shown in FIG. 6, the nozzle 51 has a nozzle hole 51h. The nozzle hole 51h opens toward the lower surface 15 to supply a heat transfer medium to the lower surface 15. The flow path 52 is connected to the nozzle hole 51h of the nozzle 51 to supply a heat transfer medium to the nozzle hole 51h. The nozzle hole 51h and the lower surface 15 face each other in a first direction D1. The nozzle hole 51h extends along the first direction D1. The nozzle hole 51h has a first opening 510 and a second opening 511. The first opening 510 is located on the upper surface of the nozzle 51. The first opening 510 faces the lower surface 15. The second opening 511 is located on the lower surface of the nozzle 51. The second opening 511 is connected to the flow path 52. In the example shown in FIG. 6, the nozzle 51 has a plate shape.

[0043] 6 intersects with the first direction D1. In one example, the second direction D2 is perpendicular to the first direction D1. The width d1 of the nozzle hole 51h in the second direction D2 is smaller than the width d2 of the flow path 52 in the second direction D2. The cross-sectional area of ​​the nozzle hole 51h along the second direction D2 is smaller than the cross-sectional area of ​​the flow path 52 along the second direction D2.

[0044] In one embodiment, the cross section of the nozzle hole 51h taken along the second direction D2 has a circular shape. The width d1 of the nozzle hole 51h taken along the second direction D2 may be constant. This "constant" includes manufacturing tolerances. For example, the difference between the width of the first opening 510 and the width of the second opening 511 may be 10% or less. In this case, the nozzle hole 51h does not include a region where the corners of the nozzle 51 are chamfered. If the corners of the nozzle 51 are chamfered, the first opening 510 and / or the second opening 511 are located inside the region where the corners of the nozzle 51 are chamfered. The minimum width of the nozzle hole 51h taken along the second direction D2 is smaller than the maximum width of the flow path 52 taken along the second direction D2. The minimum area of ​​the cross section of the nozzle hole 51h taken along the second direction D2 is smaller than the maximum area of ​​the cross section of the flow path 52 taken along the second direction D2. The cross section of the nozzle hole 51h taken along the second direction D2 may be polygonal.

[0045] The width d1 of the nozzle hole 51h in the second direction D2 is smaller than the width d2 of the flow path 52 in the second direction D2. Therefore, the flow velocity of the heat transfer medium passing through the nozzle hole 51h of the nozzle 51 and sprayed onto the lower surface 15 is faster than the flow velocity of the heat transfer medium flowing through the flow path 52. Since the flow velocity is determined by the cross-sectional area relative to the flow rate, the flow velocity of the heat transfer medium passing through the nozzle hole 51h of the nozzle 51 is (d2 / d1) of the flow velocity of the heat transfer medium flowing through the flow path 52. 2 It's double.

[0046] The heat transfer coefficient of the heat transfer medium sprayed onto the lower surface 15 is expressed by the following formula (1). h = (Nu × λ) / Dh ... Equation (1) In equation (1), h is the heat transfer coefficient [W / (m 2·K), Nu is the Nusselt number, λ is the thermal conductivity of the heat transfer medium, and Dh is the hydraulic diameter [m]. In a configuration in which the heat transfer medium is sprayed onto the lower surface 15, Nu is approximated by the following equation (2): Nu=0.535×Pr 0.4 ×Re 0.5 …Formula (2) In equation (2), Pr is the Prandtl number and Re is the Reynolds number. The Reynolds number is expressed by the following equation (3). Re = (Q × Dh) / (ν × A) = (V × Dh) / ν ... Equation (3) In equation (3), Q is the volumetric flow rate [m 3 / s], Dh is the hydraulic diameter [m], and ν is the dynamic viscosity coefficient [m 3 / s], and A is the cross-sectional area [m 2 ] and V is the flow velocity [m / s].

[0047] According to formulas (1) and (2), the heat transfer coefficient of the heat transfer medium sprayed onto the lower surface 15 is proportional to the 0.5 power of the Nusselt number. According to formula (3), the Nusselt number is proportional to the flow velocity of the heat transfer medium. As described above, the flow velocity of the heat transfer medium passing through the nozzle hole 51h of the nozzle 51 is (d2 / d1) of the flow velocity of the heat transfer medium flowing through the flow path 52. 2 The heat transfer coefficient of the heat transfer medium sprayed onto the lower surface 15 is proportional to the 0.5th power of the Nusselt number, and the Nusselt number is proportional to the flow velocity of the heat transfer medium. Therefore, the heat transfer coefficient of the heat transfer medium sprayed onto the lower surface 15 increases by a factor of (d2 / d1) because the width d1 is smaller than the width d2. As a result, the ability of the substrate support 11 to adjust the temperature of the substrate W is improved.

[0048] The one or more supply pipes 50 include a first supply pipe 50a and a second supply pipe 50b. A first nozzle 51a of the first supply pipe 50a provides a nozzle hole 51h that opens toward the second central region 15a to supply the heat transfer medium to the second central region 15a. A first flow path 52a of the first supply pipe 50a is connected to the nozzle hole 51h of the first nozzle 51a to supply the heat transfer medium to the nozzle hole 51h of the first nozzle 51a. A second nozzle 51b of the second supply pipe 50b provides a nozzle hole 51h that opens toward the second annular region 15b to supply the heat transfer medium to the nozzle hole 51h of the second nozzle 51b. A second flow path 52b of the second supply pipe 50b is connected to the nozzle hole 51h of the second nozzle 51b to supply the heat transfer medium to the nozzle hole 51h of the second nozzle 51b.

[0049] The heat transfer medium is sprayed from the nozzle holes 51h of the first nozzle 51a of the first supply pipe 50a onto the second central region 15a. The heat transfer medium is sprayed from the nozzle holes 51h of the second nozzle 51b of the second supply pipe 50b onto the second annular region 15b. As a result, the ability to adjust the temperatures of the substrate W placed on the first central region 14a of the substrate support 11 and the ring assembly 112 placed on the first annular region 14b is improved. A first valve may be disposed between the circulation device and the first flow path 52a to adjust the flow rate of the heat transfer medium supplied to the first flow path 52a. A second valve may be disposed between the circulation device and the second flow path 52b to adjust the flow rate of the heat transfer medium supplied to the second flow path 52b.

[0050] In one embodiment, the width d1 of the nozzle hole 51h in the second direction D2 may be 70% or less and 10% or more of the width of the flow path 52 in the second direction D2. The cross-sectional area of ​​the nozzle hole 51h along the second direction D2 may be 49% or less and 1% or more of the cross-sectional area of ​​the flow path 52 along the second direction D2. The minimum width of the nozzle hole 51h in the second direction D2 may be 70% or less and 10% or more of the maximum width of the flow path 52 in the second direction D2.

[0051] When there is a large difference between the flow velocity of the heat transfer medium flowing through the flow path 52 and the flow velocity of the heat transfer medium sprayed onto the lower surface 15, the heat transfer medium sprayed onto the lower surface 15 may form a jet. When the width d1 of the nozzle hole 51h in the second direction D2 is 70% or less and 10% or more of the width of the flow path 52 in the second direction D2, the heat transfer medium sprayed onto the lower surface 15 is likely to form a jet. For example, in the nozzle 51 and flow path 52 shown in FIG. 6, the heat transfer medium forms an orifice jet. Near the nozzle hole 51h, the flow velocity of the jet at the end in the second direction D2 can be faster than the flow velocity of the jet at the center in the second direction D2. As a result, the ability to adjust the temperature of the substrate W is further improved.

[0052] The nozzle 51 may have a corner 512. The corner 512 is formed by the peripheral edge of the lower surface of the nozzle 51. The corner 512 protrudes inward in the second direction D2. The heat transfer medium flowing through the flow path 52 may generate a vortex at the corner 512. The vortex of the heat transfer medium at the corner 512 is caught in the flow of the heat transfer medium ejected from the nozzle hole 51h of the nozzle 51, so the heat transfer medium sprayed onto the lower surface 15 is likely to form a jet. Note that the corner 512 does not have to protrude along the second direction. The lower surface of the nozzle 51 may be an inclined surface or a tapered surface whose diameter decreases as it becomes farther from the flow path 52. The corner 512 may be configured so that a vortex of the heat transfer medium is generated at the corner 512. In this case, the heat transfer medium may form a nozzle jet.

[0053] In one embodiment, the length d3 of the nozzle hole 51h in the first direction D1 may be smaller than the width d1 of the nozzle hole 51h in the second direction D2. In a configuration in which the length d3 of the nozzle hole 51h in the first direction D1 is smaller than the width d1 of the nozzle hole 51h in the second direction D2, the jet of heat transfer medium sprayed onto the lower surface 15 may oscillate. The jet oscillation is caused by an increase and decrease in the diameter of the jet near the nozzle hole 51h. The jet oscillates as the heat transfer medium repeatedly adheres to and peels off from the inner wall that defines the nozzle hole 51h. In this case, the area on the lower surface 15 onto which the heat transfer medium is sprayed changes, further improving the ability to adjust the temperature of the substrate W.

[0054] In one embodiment, the length d3 of the nozzle hole 51h may be 70% or less and 10% or more of the width d1 of the nozzle hole 51h. If the length d3 of the nozzle hole 51h is too small, the heat transfer medium is likely to peel off from the inner wall that defines the nozzle hole 51h. If the length d3 of the nozzle hole 51h is too large, the heat transfer medium is likely to adhere to the inner wall that defines the nozzle hole 51h. A configuration in which the length d3 of the nozzle hole 51h is 70% or less and 10% or more of the width d1 of the nozzle hole 51h makes it easier to oscillate the jet.

[0055] In one embodiment, the shortest distance d4 between the lower surface 15 and the nozzle hole 51h may be less than three times the width d1 of the nozzle hole 51h in the second direction D2. In the example shown in FIG. 6, the shortest distance d4 between the lower surface 15 and the nozzle hole 51h is the distance between the lower surface 15 and the nozzle hole 51h in the first direction D1. When the flow velocity of the heat transfer medium sprayed onto the lower surface 15 is high, the heat transfer medium is likely to diffuse. When the heat transfer medium forms a jet, the heat transfer medium is even more likely to diffuse. In a configuration in which the shortest distance d4 between the lower surface 15 and the nozzle hole 51h is less than three times the width d1 of the nozzle hole 51h in the second direction D2, the heat transfer medium is sprayed onto the lower surface 15 before it finishes diffusing, thereby further improving the ability to adjust the temperature of the substrate W.

[0056] In one embodiment, the width d1 of the nozzle hole 51h of the second nozzle 51b in the second direction D2 may be different from the width d1 of the nozzle hole 51h of the first nozzle 51a in the second direction D2 (see FIG. 3). For example, the ratio of the width d1 of the nozzle hole 51h of the second nozzle 51b to the width d2 of the second flow path 52b may be different from the ratio of the width d1 of the nozzle hole 51h of the first nozzle 51a to the width d2 of the first flow path 52a. Since the ability to adjust the temperature changes depending on the width d1 of the nozzle hole 51h of the nozzle 51, the ability to adjust the temperature of the substrate W in the first central region 14a and the ability to adjust the temperature of the ring assembly 112 in the first annular region 14b can be controlled separately.

[0057] In one embodiment, the width d1 of the nozzle hole 51h of the second supply pipe 50b in the second direction D2 may be smaller than the width d1 of the nozzle hole 51h of the first supply pipe 50a in the second direction D2 (see FIG. 3). For example, the ratio of the width d1 of the nozzle hole 51h of the second nozzle 51b to the width d2 of the second flow path 52b may be smaller than the ratio of the width d1 of the nozzle hole 51h of the first nozzle 51a to the width d2 of the first flow path 52a. A smaller width d1 of the nozzle hole 51h of the first nozzle 51a enhances the ability to adjust the temperature, thereby making it possible to improve the ability to adjust the temperature of the ring assembly 112 in the first annular region 14b compared to the ability to adjust the temperature of the substrate W in the first central region 14a.

[0058] 7 is an enlarged cross-sectional view of a portion of a substrate support according to another exemplary embodiment. The substrate support 11A shown in FIG. 7 will be described below in terms of differences from the substrate support 11 shown in FIG.

[0059] The substrate support 11A further includes a lower surface 16 (an example of a second lower surface). The lower surface 16 extends lower than the lower surface 15 (an example of a first lower surface). The substrate support 11A provides a through-hole 11h and a recessed space 11s. The through-hole 11h penetrates from the upper surface 14 to the lower surface 16. The through-hole 11h opens in each of the upper surface 14 and the lower surface 16. In one example, the substrate support 11A may provide a plurality of through-holes 11h. The through-hole 11h may be each of the plurality of through-holes 11h.

[0060] The recessed space 11s is open downward, with the lower surface 16 as the top surface. The recessed space 11s includes a first space 15s and a second space 16s. The first space 15s accommodates a nozzle 51. In one example, the first space 15s may accommodate a first nozzle 51a. The first space 15s may include a space defined by the second central region 15a and the partition wall 15c. In one example, the first space 15s may accommodate a second nozzle 51b. The first space 15s may include a space defined by the second annular region 15b and the partition wall 15c. The recessed space 11s is separated from the space within the through hole 11h. For example, the recessed space 11s and the space within the through hole 11h are airtightly separated.

[0061] The second space 16s is in communication with the first space 15s. As shown in the example in FIG. 7, the second space 16s and the first space 15s may be integrated. For example, the second space 16s and the first space 15s may be in communication with each other via another space. For example, a partition wall may be disposed between the second space 16s and the first space 15s, and the second space 16s and the first space 15s may be in communication with each other via a space below the partition wall. In one example, the second space 16s and the first space 15s may be in communication with each other via a space within the collection section 53.

[0062] The second space 16s is defined between the upper surface 14 and the lower surface 16 so as to be adjacent to the through hole 11h. For example, the second space 16s is adjacent to the through hole 11h in the second direction D2. The second space 16s extends between the first space 15s and the through hole 11h. The second space 16s is located closer to the through hole 11h than the first space 15s. In one example, the inner wall connecting the lower surface 16 and the lower surface 15 is recessed so as to approach the through hole 11h. In one embodiment, the second space 16s may extend in a circumferential direction centered on the through hole 11h. In one example, the recessed space 11s may extend in a circumferential direction centered on the through hole 11h.

[0063] In the substrate support part 11A, a second space 16s adjacent to the through hole 11h is defined between the upper surface 14 and the lower surface 16. Because the first space 15s accommodating the nozzle 51 and the second space 16s are in communication, the heat transfer medium supplied from the nozzle hole 51h circulates to the second space 16s. Therefore, the upper surface 14 located above the second space 16s is cooled by the heat transfer medium circulating through the second space 16s. This reduces the temperature difference between the area around the through hole 11h and other areas on the upper surface 14.

[0064] In one embodiment, the substrate support 11A may further include a first insulating member 61. The first insulating member 61 has a sleeve shape. The first insulating member 61 provides a through hole. The first insulating member 61 is disposed within the through hole 11h so as to fit along the through hole 11h. The through hole of the first insulating member 61 may form a part of the through hole 11h. In one example, the outer peripheral surface of the first insulating member 61 and the inner peripheral surface defining the through hole 11h are bonded together. For example, the first insulating member 61 is formed from ceramic. According to the substrate support 11A, the first insulating member 61 is disposed within the through hole 11h, thereby suppressing abnormal discharge through the through hole 11h.

[0065] In one embodiment, the substrate support 11A may include a second insulating member 62. The second insulating member 62 has a ring shape. The second insulating member 62 provides a through hole. The second insulating member 62 is attached to the lower surface 16 so as to surround the opening of the through hole 11h in the lower surface 16. The through hole of the second insulating member 62 may form a part of the through hole 11h. In one example, the upper surface and the lower surface 16 of the second insulating member 62 are bonded together. For example, the second insulating member 62 is made of ceramic. According to the substrate support 11A, the first insulating member 61 is disposed in the through hole 11h, and the second insulating member 62 is further attached to the lower surface so as to surround the through hole 11h, thereby further suppressing abnormal discharge.

[0066] In one embodiment, the substrate support 11A may further include an electrostatic chuck 1111, a base 1110, and an adhesive layer 17. As described above, the electrostatic chuck 1111 includes an upper surface 14. As described above, the base 1110 includes a lower surface 15. The adhesive layer 17 is disposed between the electrostatic chuck 1111 and the base 1110 and fixes the electrostatic chuck 1111 and the base 1110 together. In one example, the adhesive layer 17 is made of an epoxy adhesive. The first insulating member 61 may extend downward from the adhesive layer 17. According to the substrate support 11A, the first insulating member 61 extending downward from the adhesive layer 17 covers the inner surface of the base 1110 that defines the through hole 11h. Therefore, abnormal discharge through the through hole 11h is further suppressed.

[0067] In one embodiment, the substrate support 11A may further include a heat exchanger 5 and a sealing member 18. As described above, the heat exchanger 5 includes one or more supply pipes 50. The heat exchanger 5 is disposed below the recessed space 11s so that the lower surface 15 and the nozzle hole 50h face each other in the first direction D1. For example, the heat exchanger 5 may cover the opening of the recessed space 11s. The heat exchanger 5 provides a through hole 5h (second through hole) connected to the through hole 11h (first through hole). The sealing member 18 has a ring shape. In one example, the sealing member 18 is an O-ring. The sealing member 18 is disposed between the lower surface 16 and the upper surface 5a of the heat exchanger 5 to ensure airtightness between the through hole 11h and the through hole 5h. The sealing member 18 does not have to be in contact with the lower surface 16 and / or the upper surface 5a. 7, the sealing member 18 is disposed between the upper surface 5a and the lower surface of the second insulating member 62 attached to the lower surface 16. The substrate support portion 11A improves airtightness between the recessed space 11s and the space inside the through hole 11h.

[0068] In one embodiment, the through-hole 11h may include a gas hole. The gas hole is configured to supply a heat transfer gas between the upper surface 14 and the substrate W placed on the upper surface 14. In one embodiment, the through-hole 11h may include a pin hole. The pin hole accommodates a lifter pin configured to be able to protrude upward from the upper surface 14.

[0069] Although various exemplary embodiments have been described above, the present invention is not limited to the above-described exemplary embodiments, and various additions, omissions, substitutions, and modifications may be made. Furthermore, elements in different embodiments may be combined to form other embodiments.

[0070] Various exemplary embodiments included in the present disclosure are now described in [E1] to [E14] below.

[0071] [E1] a chamber; a substrate support disposed within the chamber, the substrate support including an upper surface for supporting a substrate placed thereon and a lower surface opposite the upper surface; one or more supply pipes each having a nozzle providing a nozzle hole that opens toward the lower surface to supply a heat transfer medium to the lower surface, and a flow path connected to the nozzle hole to supply the heat transfer medium to the nozzle hole; Equipped with a width of the nozzle hole in a second direction intersecting a first direction in which the lower surface and the nozzle hole face each other is smaller than a width of the flow path in the second direction; Substrate processing equipment. [E2] a width of the nozzle hole in the second direction is 70% or less and 10% or more of a width of the flow path in the second direction; The substrate processing apparatus according to E1. [E3] a length of the nozzle hole in the first direction is smaller than a width of the nozzle hole in the second direction; The substrate processing apparatus according to E1 or E2. [E4] a length of the nozzle hole in the first direction is 70% or less and 10% or more of a width of the nozzle hole in the second direction; The substrate processing apparatus according to E3. [E5] the shortest distance between the lower surface and the nozzle hole is less than three times the width of the nozzle hole in the second direction; The substrate processing apparatus according to any one of E1 to E4. [E6] The upper surface is a first central region for supporting the substrate thereon; a first annular region supporting a ring assembly mounted thereon; Including, The lower surface is a second central region opposite the first central region; and a second annular region opposite the first annular region; and Including, The one or more supply pipes a first supply pipe having a first nozzle providing a nozzle hole opening toward the second central region for supplying the heat transfer medium to the second central region, and a first flow path connected to the nozzle hole of the first nozzle for supplying the heat transfer medium to the nozzle hole of the first nozzle; a second supply pipe having a second nozzle providing a nozzle hole opening toward the second annular region for supplying the heat transfer medium to the second annular region, and a second flow path connected to the nozzle hole of the second nozzle for supplying the heat transfer medium to the nozzle hole of the second nozzle; Including, The substrate processing apparatus according to any one of E1 to E5. [E7] a width of the nozzle hole of the second nozzle in the second direction is different from a width of the nozzle hole of the first nozzle in the second direction; The substrate processing apparatus according to E6. [E8] a width of the nozzle hole of the second nozzle in the second direction is smaller than a width of the nozzle hole of the first nozzle in the second direction; The substrate processing apparatus according to E7. [E9] the lower surface is a first lower surface; The substrate support includes: further comprising a second lower surface extending below the first lower surface; a through hole penetrating from the upper surface to the second lower surface; and a recessed space opening downward with the first lower surface as a top surface, the recessed space being separated from a space within the through hole; The recessed space is a first space that accommodates the nozzle; a second space that is in communication with the first space, that is defined between the upper surface and the second lower surface so as to be adjacent to the through hole, and that extends between the first space and the through hole; Including, The substrate processing apparatus according to any one of E1 to E8. [E10] Further comprising a plasma generating unit, the substrate support portion further includes a sleeve-shaped insulating member disposed in the through hole so as to follow the through hole; The substrate processing apparatus according to E9. [E11] the insulating member is a first insulating member, the substrate support further includes a second insulating member having a ring shape; the second insulating member is attached to the second lower surface so as to surround the opening of the through hole in the second lower surface; The substrate processing apparatus according to E10. [E12] The substrate support includes: an electrostatic chuck including the top surface; a base including the first lower surface; an adhesive layer disposed between the electrostatic chuck and the base and fixing the electrostatic chuck to the base, The insulating member extends downward from the adhesive layer. The substrate processing apparatus according to E10 or 11. [E13] the through hole is a first through hole, The substrate support includes: a heat exchanger including the one or more supply pipes, the heat exchanger being disposed below the recessed space such that the first lower surface and the nozzle hole face each other in the first direction, and the heat exchanger providing a second through hole connected to the first through hole; a sealing member having an annular shape, the sealing member being disposed between the second lower surface and the upper surface of the heat exchanger so as to ensure airtightness between the first through hole and the second through hole; The substrate processing apparatus according to any one of E9 to E12. [E14] The second space extends in a circumferential direction around the through hole. The substrate processing apparatus according to any one of E9 to E13. [E15] the through-holes include gas holes for supplying a heat transfer gas between the upper surface and the substrate placed on the upper surface; The substrate processing apparatus according to any one of E9 to E14. [E16] The through-hole includes a pin hole for accommodating a lifter pin configured to be able to protrude upward from the upper surface. The substrate processing apparatus according to any one of E9 to E14.

[0072] From the foregoing, it will be understood that various embodiments of the present disclosure have been described herein for purposes of illustration, and that various modifications may be made without departing from the scope and spirit of the present disclosure. Accordingly, the various embodiments disclosed herein are not intended to be limiting, with the true scope and spirit being indicated by the appended claims. [Explanation of symbols]

[0073] 1...plasma processing apparatus, 5...heat exchanger, 5h...through hole, 10...chamber, 11, 11A...substrate support portion, 11h...through hole, 11s...recessed space, 14...upper surface, 14a...first central region, 15a...second central region, 14b...first annular region, 15b...second annular region, 15...lower surface, 15s...first space, 16...lower surface, 16s...second space, 17...adhesive layer, 18...sealing member, 5 0...supply pipe, 50a...first supply pipe, 50b...second supply pipe, 51...nozzle, 51a...first nozzle, 51b...second nozzle, 51h...nozzle hole, 52...flow path, 52a...first flow path, 52b...second flow path, 61, 62...insulating member, 112...ring assembly, 1110...base, 1111...electrostatic chuck, D1...first direction, D2...second direction, d1, d2...width, W...substrate.

Claims

1. a chamber; a substrate support disposed within the chamber, the substrate support including an upper surface for supporting a substrate placed thereon and a lower surface opposite the upper surface; one or more supply pipes each having a nozzle providing a nozzle hole that opens toward the lower surface to supply a heat transfer medium to the lower surface, and a flow path connected to the nozzle hole to supply the heat transfer medium to the nozzle hole; Equipped with a width of the nozzle hole in a second direction intersecting a first direction in which the lower surface and the nozzle hole face each other is smaller than a width of the flow path in the second direction; Substrate processing equipment.

2. a width of the nozzle hole in the second direction is 70% or less and 10% or more of a width of the flow path in the second direction; The substrate processing apparatus according to claim 1 .

3. a length of the nozzle hole in the first direction is smaller than a width of the nozzle hole in the second direction; The substrate processing apparatus according to claim 1 or 2.

4. a length of the nozzle hole in the first direction is 70% or less and 10% or more of a width of the nozzle hole in the second direction; The substrate processing apparatus according to claim 3 .

5. a shortest distance between the lower surface and the nozzle hole is less than three times the width of the nozzle hole in the second direction; The substrate processing apparatus according to claim 1 or 2.

6. The upper surface is a first central region for supporting the substrate thereon; a first annular region supporting a ring assembly mounted thereon; Including, The lower surface is a second central region opposite the first central region; and a second annular region opposite the first annular region; and Including, The one or more supply pipes a first supply pipe having a first nozzle providing a nozzle hole opening toward the second central region for supplying the heat transfer medium to the second central region, and a first flow path connected to the nozzle hole of the first nozzle for supplying the heat transfer medium to the nozzle hole of the first nozzle; a second supply pipe having a second nozzle providing a nozzle hole opening toward the second annular region for supplying the heat transfer medium to the second annular region, and a second flow path connected to the nozzle hole of the second nozzle for supplying the heat transfer medium to the nozzle hole of the second nozzle; Including, The substrate processing apparatus according to claim 1 or 2.

7. a width of the nozzle hole of the second nozzle in the second direction is different from a width of the nozzle hole of the first nozzle in the second direction; The substrate processing apparatus according to claim 6 .

8. a width of the nozzle hole of the second nozzle in the second direction is smaller than a width of the nozzle hole of the first nozzle in the second direction; The substrate processing apparatus according to claim 7 .

9. the lower surface is a first lower surface; The substrate support includes: a second lower surface extending below the first lower surface; a through hole penetrating from the upper surface to the second lower surface; and a recessed space opening downward with the first lower surface as a top surface, the recessed space being separated from a space within the through hole; The recessed space is a first space that accommodates the nozzle; a second space that is in communication with the first space, that is defined between the upper surface and the second lower surface so as to be adjacent to the through hole, and that extends between the first space and the through hole; Including, The substrate processing apparatus according to claim 1 or 2.

10. Further comprising a plasma generating unit, the substrate support portion further includes a sleeve-shaped insulating member disposed in the through hole so as to follow the through hole; The substrate processing apparatus according to claim 9 .

11. the insulating member is a first insulating member, the substrate support further includes a second insulating member having a ring shape; the second insulating member is attached to the second lower surface so as to surround the opening of the through hole in the second lower surface; The substrate processing apparatus according to claim 10 .

12. The substrate support includes: an electrostatic chuck including the top surface; a base including the first lower surface; an adhesive layer disposed between the electrostatic chuck and the base and fixing the electrostatic chuck to the base, The insulating member extends downward from the adhesive layer. The substrate processing apparatus according to claim 10 .

13. the through hole is a first through hole, The substrate support includes: a heat exchanger including the one or more supply pipes, the heat exchanger being disposed below the recessed space such that the first lower surface and the nozzle hole face each other in the first direction, and the heat exchanger providing a second through hole connected to the first through hole; a sealing member having an annular shape, the sealing member being disposed between the second lower surface and the upper surface of the heat exchanger so as to ensure airtightness between the first through hole and the second through hole; The substrate processing apparatus according to claim 9 .

14. The second space extends in a circumferential direction around the through hole. The substrate processing apparatus according to claim 9 .

15. the through-holes include gas holes for supplying a heat transfer gas between the upper surface and the substrate placed on the upper surface; The substrate processing apparatus according to claim 9 .

16. The through-hole includes a pin hole for accommodating a lifter pin configured to be able to protrude upward from the upper surface. The substrate processing apparatus according to claim 9 .

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