Optoelectronic device with nanoparticle deposition layer

Abstract

To provide an optoelectronic device having a nanoparticle deposition layer.SOLUTION: The layered semiconductor device includes at least one grain structure disposed on an underlying layer comprising a grain material in contact with a contact material selected from a seed material, a co-deposited dielectric material, and / or at least one patterning material. A method for controllably selecting formation of at least one grain structure on an underlying layer during fabrication of a device includes depositing at least one layer comprising the underlying layer and exposing a surface thereof to a flux of grain material that contacts a contact material and coalesces to dispose the at least one grain structure on the underlying layer.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] Related Applications This application claims the benefit of priority to U.S. Provisional Patent Application No. 63 / 107,393, filed October 29, 2020, U.S. Patent Application No. 63 / 153,834, filed February 25, 2021, U.S. Patent Application No. 63 / 163,453, filed March 19, 2021, and U.S. Patent Application No. 63 / 181,100, filed April 28, 2021, the contents of each of which are incorporated herein by reference in their entirety.

[0002] The present disclosure relates to thin film nanoparticle (NP) layers of deposition materials as may be deposited during layered semiconductor device fabrication processes, and methods for controllably depositing such layers onto exposed layer surfaces of any layer (or any lateral portion of) such devices. [Background technology]

[0003] Nanoparticles (NPs) are particles of matter whose primary characteristic size is on the nanometer (nm) scale, generally understood to be between about 1 and 300 nm. At the nm scale, NPs of a given material may have unique properties (including, but not limited to, optical, chemical, physical, and / or electrical) compared to the same material in bulk form, including, but not limited to, the amount of absorption of EM radiation exhibited by such NPs at different wavelengths (ranges).

[0004] These properties can be exploited when multiple NPs are formed in a layer of a layered semiconductor device to improve its performance.

[0005] However, current mechanisms for introducing layers of such NPs into such devices have several drawbacks.

[0006] First, such NPs are typically formed in close-packed layers in such devices and / or dispersed in a matrix material. As a result, the thickness of such NP layers is typically much greater than the characteristic size of the NPs themselves. They may impart undesirable attributes with respect to device performance, device stability, device reliability, and / or device lifetime, which may reduce or even eliminate any perceived benefits provided by the unique properties of the NPs.

[0007] Second, techniques for synthesizing NPs in and for use in such devices may introduce large amounts of carbon (C), oxygen (O), and / or sulfur (S) through various mechanisms.

[0008] As a non-limiting example, wet chemical methods are typically used to introduce NPs with precisely controlled characteristic size, length, width, diameter, height, size distribution, shape, surface coverage, configuration, deposition density, dispersity, and / or composition into optoelectronic devices. However, such methods typically employ organic capping groups to stabilize the NPs (e.g., synthesis of citrate-capped silver (Ag) NPs), which introduce C, O, and / or S atoms into the synthesized NPs.

[0009] Furthermore, NP layers deposited from solution typically contain C, O, and / or S due to the solvent used during deposition.

[0010] Additionally, these elements may be introduced as contaminants during the wet chemical process and / or deposition of the NP layer.

[0011] However, when introduced, the presence of large amounts of C, O, and / or S in the NP layer of such devices can degrade the performance, stability, reliability, and / or lifetime of such devices.

[0012] Third, when depositing NP layers from solution, as the solvent employed dries, the NP layers tend to have non-uniform properties across the NP layer and / or between different patterned regions of such a layer. In some non-limiting examples, the edges of a given layer may be significantly thicker or thinner than the interior regions of such a layer, and such differences can adversely affect device performance, stability, reliability, and / or lifetime.

[0013] Fourth, beyond wet chemical synthesis and solution deposition processes, there are other methods and / or processes for synthesizing and / or depositing NPs, including, but not limited to, vacuum-based processes such as PVD. However, such methods tend to provide poor control over the characteristic size, length, width, diameter, height, size distribution, shape, surface coverage, composition, deposition density, dispersity, and / or composition of the NPs deposited thereby. As a non-limiting example, in PVD processes, NPs tend to form close-packed films as their size increases. As a result, methods such as PVD are generally not well suited to forming layers of large, dispersed NPs with low surface coverage. Rather, the poor control over the characteristic size, length, width, diameter, height, size distribution, shape, surface coverage, composition, deposition density, dispersity, and / or composition provided by such methods can result in reduced device performance, stability, reliability, and / or lifetime.

[0014] In some non-limiting examples, an OLED display panel may include a plurality of laterally distributed (sub)pixels, each pixel having an associated electrode pair and at least one semiconductor layer therebetween. The anode and cathode are electrically coupled to a power source and generate holes and electrons, respectively, that migrate toward each other through the at least one semiconductor layer. When a pair of holes and electrons combine, a photon may be emitted. In some non-limiting examples, the (sub)pixels are driven by a drive circuit including a plurality of thin film transistor (TFT) structures electrically coupled by conductive metal lines. In some non-limiting examples, the electrodes and may be selectively activated within the substrate on which at least one semiconductor layer is deposited. The various layers and coatings of such panels are typically formed by vacuum-based deposition processes.

[0015] In some non-limiting examples, multiple subpixels, each emitting in response to EM radiation of a different wavelength (range), may collectively form a pixel, where EM radiation of a first wavelength (range) emitted by a first subpixel of a pixel may behave differently from EM radiation of a second wavelength (range) emitted by its second subpixel due to the different wavelengths (ranges) involved.

[0016] In some non-limiting examples, the absorption spectrum exhibited by a layer of metal NPs of a first given characteristic size, length, width, diameter, height, size distribution, shape, surface coverage, composition, deposition density, dispersity, and / or composition over a first wavelength range can differ from the absorption spectrum exhibited by a layer of metal NPs of a second given characteristic size, length, width, diameter, height, size distribution, shape, surface coverage, composition, deposition density, dispersity, and / or composition over the first wavelength range and / or from the absorption spectrum exhibited by a layer of metal NPs of the first given characteristic size, length, width, diameter, height, size distribution, shape, surface coverage, composition, deposition density, dispersity, and / or composition over a second wavelength range.

[0017] In some non-limiting examples, the objective may be to provide a mechanism for controllably depositing thin dispersed layers of metal NPs within layered semiconductor devices, which may affect the performance of such devices in terms of optical properties, performance, stability, reliability, and / or lifetime.

[0018] In some non-limiting examples, one may aim to controllably form a layer of NPs on the exposed layer surface of a particular layer of a device, including but not limited to, over a particular portion of its lateral side.

[0019] In some non-limiting examples, it may be desirable to provide a mechanism for controllably depositing a layer of NPs having at least one of the following characteristic features: size, length, width, diameter, height, size distribution, shape, surface coverage, configuration, deposition density, dispersity, and at least one composition that is substantially free of, but not limited to, at least one contaminant.

[0020] In some non-limiting examples, one may aim to controllably influence the absorption and / or transmittance of EM radiation of a given wavelength (range) that passes at least partially through a device (including EM radiation emitted thereby) by controllably depositing a layer of NPs across the path of such EM radiation. [Brief explanation of the drawings]

[0021] Examples of the present disclosure will now be described by reference to the following drawings, in which the same reference numbers in different drawings indicate the same and / or, in some non-limiting examples, similar and / or corresponding elements. [Figure 1] FIG. 1 is a simplified block diagram from a cross-sectional aspect of an exemplary device having multiple layers of lateral sides with at least one layer of grain structure disposed between each of the multiple layers, according to one example. [Figure 2A] FIG. 1 shows multiple SEM images of an exemplary sample according to one example of the present disclosure, along with a plot of the distribution of several particles of various characteristic sizes therein. [Figure 2B] FIG. 1 shows multiple SEM images of an exemplary sample according to one example of the present disclosure, along with a plot of the distribution of several particles of various characteristic sizes therein. [Figure 2C] FIG. 1 shows multiple SEM images of an exemplary sample according to one example of the present disclosure, along with a plot of the distribution of several particles of various characteristic sizes therein. [Figure 2D]FIG. 1 shows multiple SEM images of an exemplary sample according to one example of the present disclosure, along with a plot of the distribution of several particles of various characteristic sizes therein. [Figure 2E] FIG. 1 shows multiple SEM images of an exemplary sample according to one example of the present disclosure, along with a plot of the distribution of several particles of various characteristic sizes therein. [Figure 3] FIG. 2 is a simplified block diagram from a cross-sectional embodiment of an exemplary version of the device of FIG. 1 in which a layer of particle structures is disposed on the particle structure-patterned coating, according to one example of the present disclosure. [Figure 4A] 2 is a simplified block diagram from a cross-sectional embodiment of an exemplary version of the device of FIG. 1 illustrating various examples of possible interactions between the particle structure-patterned coating and the particle structures, according to examples of the present disclosure. [Figure 4B] 2 is a simplified block diagram from a cross-sectional embodiment of an exemplary version of the device of FIG. 1 illustrating various examples of possible interactions between the particle structure-patterned coating and the particle structures, according to examples of the present disclosure. [Figure 4C] 2 is a simplified block diagram from a cross-sectional embodiment of an exemplary version of the device of FIG. 1 illustrating various examples of possible interactions between the particle structure-patterned coating and the particle structures, according to examples of the present disclosure. [Figure 4D] 2 is a simplified block diagram from a cross-sectional embodiment of an exemplary version of the device of FIG. 1 illustrating various examples of possible interactions between the particle structure-patterned coating and the particle structures, according to examples of the present disclosure. [Figure 4E] 2 is a simplified block diagram from a cross-sectional embodiment of an exemplary version of the device of FIG. 1 illustrating various examples of possible interactions between the particle structure-patterned coating and the particle structures, according to examples of the present disclosure. [Figure 4F] 2 is a simplified block diagram from a cross-sectional embodiment of an exemplary version of the device of FIG. 1 illustrating various examples of possible interactions between the particle structure-patterned coating and the particle structures, according to examples of the present disclosure. [Figure 4G]2 is a simplified block diagram from a cross-sectional embodiment of an exemplary version of the device of FIG. 1 illustrating various examples of possible interactions between the particle structure-patterned coating and the particle structures, according to examples of the present disclosure. [Figure 4H] 2 is a simplified block diagram from a cross-sectional embodiment of an exemplary version of the device of FIG. 1 illustrating various examples of possible interactions between the particle structure-patterned coating and the particle structures, according to examples of the present disclosure. [Figure 5] 4 is an example of a partially cut-away plan view of the device of FIG. 3 including a grain structure-patterned coating underlying at least one grain structure and an overlying layer deposited thereon, according to an example of the present disclosure. [Figure 6A] 1 is a SEM micrograph of a sample fabricated in an example of the present disclosure. [Figure 6B] 1 is a SEM micrograph of a sample fabricated in an example of the present disclosure. [Figure 6C] 1 is a SEM micrograph of a sample fabricated in an example of the present disclosure. [Figure 6D] 1 is a SEM micrograph of a sample fabricated in an example of the present disclosure. [Figure 6E] 1 is a SEM micrograph of a sample fabricated in an example of the present disclosure. [Figure 6F] 6A-6E are histograms plotting the histogram distribution of particle structure as a function of characteristic particle size based on analysis of the micrographs of FIGS. 6A-6E. [Figure 6G] 1 is a SEM micrograph of a sample fabricated in an example of the present disclosure. [Figure 6H] 1 is a SEM micrograph of a sample fabricated in an example of the present disclosure. [Figure 6I] 1 is a SEM micrograph of a sample fabricated in an example of the present disclosure. [Figure 6J] 1 is a SEM micrograph of a sample fabricated in an example of the present disclosure. [Figure 6K] 6A-6J are histograms plotting the histogram distribution of particle structure as a function of characteristic particle size based on analysis of the micrographs of FIGS. 6G-6J. [Figure 6L] 1 is a SEM micrograph of a sample fabricated in an example of the present disclosure. [Figure 6M] 1 is a SEM micrograph of a sample fabricated in an example of the present disclosure. [Figure 6N] 1 is a SEM micrograph of a sample fabricated in an example of the present disclosure. [Figure 6O] 1 is a SEM micrograph of a sample fabricated in an example of the present disclosure. [Figure 6P] 6A-6C are histograms plotting the histogram distribution of grain structure as a function of characteristic grain size based on analysis of the micrographs of FIGS. 6L-6O. [Figure 7A] 2 is a schematic diagram showing at least one particle structure of FIG. 1 proximate an emission region of the device of FIG. 1 formed by deposition of a patterned coating followed by deposition of multiple seeds to form a structure according to one example of the present disclosure. [Figure 7B] FIG. 7B is a schematic diagram illustrating a version of at least one grain structure of FIG. 7A formed by deposition of a patterned coating followed by deposition of a plurality of seeds, according to an example of the present disclosure. [Figure 8A] 1A-1C are simplified block diagrams from cross-sectional aspects of various examples of an exemplary user device having a display panel for covering a body and at least one under-display component housed therein for exchanging EM signals at a non-zero angle to a layer of the display panel therethrough, according to one example of the present disclosure. [Figure 8B] 1A-1C are simplified block diagrams from cross-sectional aspects of various examples of an exemplary user device having a display panel for covering a body and at least one under-display component housed therein for exchanging EM signals at a non-zero angle to a layer of the display panel therethrough, according to one example of the present disclosure. [Figure 8C]1A-1C are simplified block diagrams from cross-sectional aspects of various examples of an exemplary user device having a display panel for covering a body and at least one under-display component housed therein for exchanging EM signals at a non-zero angle to a layer of the display panel therethrough, according to one example of the present disclosure. [Figure 9A] 1 is a SEM micrograph of a sample fabricated in an example of the present disclosure. [Figure 9B] 1 is a SEM micrograph of a sample fabricated in an example of the present disclosure. [Figure 9C] 9C is a chart of average diameters based on analysis of the micrographs of FIGS. 9A and 9B. [Figure 10] 1 is a schematic diagram illustrating an exemplary cross-sectional view of an exemplary user device having a display panel having multiple layers with at least one opening therein, according to an example of the present disclosure. [Figure 11A] 11 is a schematic diagram illustrating the use of the user device of FIG. 10, in which at least one opening is embodied by at least one signal transmission region, to exchange EM radiation in the IR and / or NIR spectrum for biometric authentication of a user, according to an example of the present disclosure. [Figure 11B] FIG. 11 is a plan view of the user device of FIG. 10 including a display panel according to an example of the present disclosure. [Figure 11C] FIG. 11C is a cross-sectional view of the device shown in FIG. 11B taken along line 11C-11C. [Figure 11D] FIG. 11 is a plan view of the user device of FIG. 10 including a display panel according to an example of the present disclosure. [Figure 11E] FIG. 11E is a cross-sectional view of the device shown in FIG. 11D taken along line 11E-11E. [Figure 11F] FIG. 11 is a plan view of the user device of FIG. 10 including a display panel according to an example of the present disclosure. [Figure 11G] FIG. 11G is a cross-sectional view of the device shown in FIG. 11F taken along line 11G-11G. [Figure 11H] FIG. 2 is an enlarged plan view of a portion of a panel according to an example of the present disclosure. [Figure 12A] 1A-1D are simplified block diagrams from cross-sectional aspects of various example optoelectronic devices according to an example of the present disclosure. [Figure 12B] 1A-1D are simplified block diagrams from cross-sectional aspects of various example optoelectronic devices according to an example of the present disclosure. [Figure 12C] 1A-1D are simplified block diagrams from cross-sectional aspects of various example optoelectronic devices according to an example of the present disclosure. [Figure 12D] 1A-1D are simplified block diagrams from cross-sectional aspects of various example optoelectronic devices according to an example of the present disclosure. [Figure 12E] 1A-1D are simplified block diagrams from cross-sectional aspects of various example optoelectronic devices according to an example of the present disclosure. [Figure 13] 1 is a simplified block diagram from a cross-sectional view of an example of an optoelectronic device according to an example of the present disclosure. [Figure 14] 1 is a simplified block diagram from a cross section of an exemplary device having multiple layers on a lateral side formed by selective deposition of a patterned coating on a first portion of the lateral side, followed by deposition of a closed coating of deposition material on a second portion thereof, according to one example of the present disclosure. [Figure 15] 1 is a plot of photoluminescence intensity as a function of wavelength for various experimental samples. [Figure 16] 1 is a plot of the transmittance reduction as a function of wavelength for various experimental samples. [Figure 17] 15 is a schematic diagram illustrating an exemplary process for depositing a patterned coating in a pattern onto an exposed layer surface of an underlying layer in an exemplary version of the device of FIG. 14 according to one example of the present disclosure. [Figure 18] 15 is a schematic diagram illustrating an exemplary process for depositing a deposition material onto a second portion of an exposed layer surface including the deposition pattern of the patterned coating of FIG. 14, wherein the patterned coating is a nucleation inhibiting coating (NIC). [Figure 19A] FIG. 15 is a schematic diagram illustrating an exemplary version of the device of FIG. 14 in cross-section. [Figure 19B]19B is a schematic diagram showing the device of FIG. 19A in a complementary plan view. [Figure 19C] FIG. 15 is a schematic diagram illustrating an exemplary version of the device of FIG. 14 in cross-section. [Figure 19D] 19D is a schematic diagram showing the device of FIG. 19C in a complementary plan view. [Figure 19E] FIG. 15 is a schematic cross-sectional view of an example of the device of FIG. 14. [Figure 19F] FIG. 15 is a schematic cross-sectional view of an example of the device of FIG. 14. [Figure 19G] FIG. 15 is a schematic cross-sectional view of an example of the device of FIG. 14. [Figure 20A] 15A-15C are schematic diagrams illustrating various potential behaviors of a patterned coating at a deposition interface with a deposited layer in an exemplary version of the device of FIG. 14, according to various examples of the present disclosure. [Figure 20B] 15A-15C are schematic diagrams illustrating various potential behaviors of a patterned coating at a deposition interface with a deposited layer in an exemplary version of the device of FIG. 14, according to various examples of the present disclosure. [Figure 20C] 15A-15C are schematic diagrams illustrating various potential behaviors of a patterned coating at a deposition interface with a deposited layer in an exemplary version of the device of FIG. 14, according to various examples of the present disclosure. [Figure 20D] 15A-15C are schematic diagrams illustrating various potential behaviors of a patterned coating at a deposition interface with a deposited layer in an exemplary version of the device of FIG. 14, according to various examples of the present disclosure. [Figure 20E] 15A-15C are schematic diagrams illustrating various potential behaviors of a patterned coating at a deposition interface with a deposited layer in an exemplary version of the device of FIG. 14, according to various examples of the present disclosure. [Figure 20F] 15A-15C are schematic diagrams illustrating various potential behaviors of a patterned coating at a deposition interface with a deposited layer in an exemplary version of the device of FIG. 14, according to various examples of the present disclosure. [Figure 20G]15A-15C are schematic diagrams illustrating various potential behaviors of a patterned coating at a deposition interface with a deposited layer in an exemplary version of the device of FIG. 14, according to various examples of the present disclosure. [Figure 20H] 15A-15C are schematic diagrams illustrating various potential behaviors of a patterned coating at a deposition interface with a deposited layer in an exemplary version of the device of FIG. 14, according to various examples of the present disclosure. [Figure 20I] 15A-15C are schematic diagrams illustrating various potential behaviors of a patterned coating at a deposition interface with a deposited layer in an exemplary version of the device of FIG. 14, according to various examples of the present disclosure. [Figure 21] 1 is a block diagram of an exemplary electroluminescent device from a cross section according to one example of the present disclosure. [Figure 22] FIG. 22 is a cross-sectional view of the device of FIG. 21. [Figure 23] FIG. 22 is a schematic diagram illustrating, in plan, an exemplary patterned electrode suitable for use in a version of the device of FIG. 21, according to one example of the present disclosure. [Figure 24] FIG. 24 is a schematic diagram illustrating an exemplary cross-sectional view of the device of FIG. 23 taken along line 24-24. [Figure 25A] 22 is a schematic diagram illustrating, in plan view, several exemplary patterns of electrodes suitable for use in an exemplary version of the device of FIG. 21, according to one example of the present disclosure. [Figure 25B] 25B-25B are schematic diagrams illustrating exemplary cross-sectional views of the device of FIG. 25A at intermediate stages, taken along line 25B-25B. [Figure 25C] FIG. 25C is a schematic diagram illustrating an exemplary cross-sectional view of the device of FIG. 25A taken along line 25C-25C. [Figure 26] FIG. 22 is a schematic diagram showing a cross-sectional view of an exemplary version of the device of FIG. 21 with an exemplary patterned auxiliary electrode according to an example of the present disclosure. [Figure 27] 1 is a schematic diagram illustrating, in plan view, an exemplary pattern of auxiliary electrodes covering at least one emissive region and at least one non-emissive region, according to one example of the present disclosure. [Figure 28A]22 is a schematic diagram illustrating, in plan view, an example pattern of an example version of the device of FIG. 21 having multiple groups of diamond-configured emission regions, according to an example of the present disclosure. [Figure 28B] FIG. 28B is a schematic diagram illustrating an exemplary cross-sectional view of the device of FIG. 28A taken along line 28B-28B. [Figure 28C] FIG. 28C is a schematic diagram illustrating an exemplary cross-sectional view of the device of FIG. 28A taken along line 28C-28C. [Figure 29] FIG. 23 is a schematic diagram illustrating an exemplary cross-sectional view of an exemplary version of the device of FIG. 22 having an additional exemplary deposition step, according to one example of the present disclosure. [Figure 30] FIG. 23 is a schematic diagram showing an example cross-sectional view of an example version of the device of FIG. 22 with an additional example deposition step according to one example of the present disclosure. [Figure 31] FIG. 23 is a schematic diagram showing an example cross-sectional view of an example version of the device of FIG. 22 with an additional example deposition step according to one example of the present disclosure. [Figure 32] FIG. 23 is a schematic diagram illustrating an exemplary cross-sectional view of an exemplary version of the device of FIG. 22 having an additional exemplary deposition step, according to one example of the present disclosure. [Figure 33A] 22 is a schematic diagram illustrating, in plan view, an example of a transparent version of the device of FIG. 21 , including at least one exemplary pixel area and at least one exemplary light-transmitting area having at least one auxiliary electrode, according to an example of the present disclosure. [Figure 33B] FIG. 33B is a schematic diagram illustrating an exemplary cross-sectional view of the device of FIG. 33A taken along line 33B-33B. [Figure 34A] FIG. 22 is a schematic diagram illustrating, in plan view, an example of a transparent version of the device of FIG. 21, including at least one example pixel region and at least one example light-transmitting region, according to an example of the present disclosure. [Figure 34B] FIG. 34B is a schematic diagram illustrating an exemplary cross-sectional view of the device of FIG. 34A taken along line 34-34. [Figure 34C] FIG. 34B is a schematic diagram illustrating an exemplary cross-sectional view of the device of FIG. 34A taken along line 34-34. [Figure 35] 23A-23C are schematic diagrams that may show exemplary stages of an exemplary process for fabricating an exemplary version of the device of FIG. 22 having subpixel regions with second electrodes of different thicknesses, according to an example of the present disclosure. [Figure 36] FIG. 22 is a schematic diagram showing an exemplary cross-sectional view of an exemplary version of the device of FIG. 21 in which the second electrode is coupled with an auxiliary electrode, according to an example of the present disclosure. [Figure 37] 22 is a schematic diagram showing an exemplary cross-sectional view of an exemplary version of the device of FIG. 21 having a septum and a shielding region, such as a recess, in a non-emitting region, according to an example of the present disclosure. [Figure 38A] 22A-22C are schematic diagrams illustrating exemplary cross-sectional views of exemplary versions of the device of FIG. 21 having septa and shielding regions, such as openings, in non-emitting regions, according to various examples of the present disclosure. [Figure 38B] 22A-22C are schematic diagrams illustrating exemplary cross-sectional views of exemplary versions of the device of FIG. 21 having septa and shielding regions, such as openings, in non-emitting regions, according to various examples of the present disclosure. [Figure 39A] 22A-22C are schematic diagrams illustrating exemplary stages of an exemplary process for depositing a deposition layer in a pattern on an exposed layer surface of an exemplary version of the device of FIG. 21 by a selective deposition and subsequent removal process according to an example of the present disclosure. [Figure 39B] 22A-22C are schematic diagrams illustrating exemplary stages of an exemplary process for depositing a deposition layer in a pattern on an exposed layer surface of an exemplary version of the device of FIG. 21 by a selective deposition and subsequent removal process according to an example of the present disclosure. [Figure 39C] 22A-22C are schematic diagrams illustrating exemplary stages of an exemplary process for depositing a deposition layer in a pattern on an exposed layer surface of an exemplary version of the device of FIG. 21 by a selective deposition and subsequent removal process according to an example of the present disclosure. [Figure 40] 1 is a flowchart illustrating the operation of a method according to an example. [Figure 41]1 is an exemplary energy profile showing the relative energy states of adatoms absorbed on a surface, according to an example of the present disclosure. [Figure 42] FIG. 1 is a schematic diagram illustrating the formation of a membrane nucleus according to an example of the present disclosure. [Figure 43] 43A-43D each illustrate various exemplary viewing windows of at least one particle structure according to embodiments of the present disclosure.

[0022] In this disclosure, a reference number accompanied by at least one numerical value (including, but not limited to, a subscript) and / or lowercase alphabetic character (including, but not limited to, a lowercase character) may be considered to refer to a particular instance and / or a subset of instances of the element or feature described by the reference number. Reference to a reference number without reference to an accompanying value and / or character may generally refer to the element or feature described by the reference number and / or to the set of all instances described thereby, as the context indicates. Similarly, a reference number may have the letter "x" in place of a number. Reference to such a reference number may generally refer to the element or feature described by the reference number with the letter "x" replaced by a number, and / or to the set of all instances described thereby, as the context indicates.

[0023] In this disclosure, for purposes of explanation and not limitation, specific details are set forth, including but not limited to, particular architectures, interfaces, and / or techniques, to provide a thorough understanding of the present disclosure. In some instances, detailed descriptions of well-known systems, techniques, components, devices, circuits, methods, and applications are omitted so as not to obscure the description of the present disclosure with unnecessary detail.

[0024] It will also be appreciated that the block diagrams reproduced herein may represent conceptual views of illustrative components embodying the principles of the present technology.

[0025] Accordingly, the components of the systems and methods have been represented, where appropriate, by conventional symbols in the drawings showing only those specific details relevant to understanding the examples of the present disclosure, so as not to obscure the present disclosure with details that will be readily apparent to those skilled in the art having the benefit of the description herein.

[0026] Any drawings provided herein may not be drawn to scale and may not be considered as limiting the disclosure in any way.

[0027] Any features or acts shown in dashed outline may, in some instances, be considered optional. Summary of the Invention

[0028] It is an object of the present disclosure to obviate or mitigate at least one disadvantage of the prior art.

[0029] The present disclosure discloses a stacked semiconductor device including at least one grain structure disposed on an underlayer including a particle material in contact with a contact material selected from a seed material, a co-deposited dielectric material, and / or at least one patterned material having an initial sticking probability for deposition of the particle material thereon that is at least one of 0.3 or less and an initial sticking probability of the material of the underlayer for deposition of the particle material thereon that is less than or equal to the initial sticking probability of the material of the underlayer.

[0030] The present disclosure also discloses a method for controllably selecting the formation of at least one grain structure on an underlayer during device fabrication, the method comprising depositing at least one layer including an underlayer and exposing a surface thereof to a flux of particulate material that contacts and coalesces with a contact material to place at least one grain structure on the underlayer.

[0031] According to a broad aspect, a semiconductor device is disclosed having a plurality of layers deposited on a substrate and extending at least one lateral side defined by a lateral axis thereof, the semiconductor device comprising at least one grain structure comprising a grain material, the at least one grain structure being disposed on an exposed layer surface of an underlying layer, the grain material being in contact with a contact material selected from at least one of a seed material, a co-deposited dielectric material, and at least one patterned material.

[0032] In some non-limiting examples, the at least one particle structure may be disposed in a discontinuous layer on an underlayer. In some non-limiting examples, the at least one particle structure in at least a central portion of the discontinuous layer may have a common characteristic selected from at least one of its size, length, width, diameter, height, size distribution, shape, surface coverage, composition, deposition density, degree of dispersion, material, degree of aggregation, and other characteristics. In some non-limiting examples, the discontinuous layer may be disposed on a patterned coating including at least one patterned material. In some non-limiting examples, the discontinuous coating may extend substantially across the entire lateral extent of the patterned coating. In some non-limiting examples, the patterned coating may include at least one nucleation site for the particle material. In some non-limiting examples, the patterned coating may be supplemented with a seed material that acts as a nucleation site for the particle material.

[0033] In some non-limiting examples, the particulate material may include at least one of silver, ytterbium, magnesium, potassium, sodium, lithium, barium, cesium, gold, copper, aluminum, zinc, cadmium, tin, yttrium, alloys of any of these in any combination, and any combination of any of these.

[0034] In some non-limiting examples, the underlayer may be selected from at least one of an electron transport layer, an electron injection layer, a metal, an alloy, a metal oxide, and any combination of any of the foregoing.

[0035] In some non-limiting examples, the device comprises at least one grain structure and a substrate. The at least one upper layer may include at least one capping layer (CPL) deposited on the underlying layer. In some non-limiting examples, the at least one upper layer may include at least one of: at least one capping layer (CPL) and a cover layer selected from at least one of an outcoupling layer, a CPL, a thin film encapsulation layer, a polarizing layer, lithium fluoride, an air gap, and any combination of any of the foregoing. In some non-limiting examples, the at least one upper layer may have a refractive index greater than the refractive index of the underlying layer.

[0036] In some non-limiting examples, the at least one particle structure may be disposed on a first portion of a lateral side of the device. In some non-limiting examples, the first portion may correspond to at least a portion of the signal transparent region. In some non-limiting examples, the device may be adapted to receive at least one EM signal through the signal transparent region for exchange with at least one under-display component. In some non-limiting examples, the at least one under-display component may include at least one of a receiver adapted to receive at least one EM signal passing through the signal transparent region at a non-zero angle relative to the substrate layer and a transmitter adapted to emit at least one EM signal passing through the signal transparent region at a non-zero angle relative to the substrate layer. In some non-limiting examples, the transmitter can emit a first EM signal, and the receiver can detect a second EM signal that is a reflection of the first EM signal. In some non-limiting examples, the exchange of the first and second EM signals can provide biometric authentication of the user. In some non-limiting examples, the device can form a display panel of a user device that surrounds the under-display component together with the device.

[0037] In some non-limiting examples, a second portion of the lateral side of the device may be substantially devoid of at least one grain structure. In some non-limiting examples, the device may be an optoelectronic device, and the second portion may correspond to at least one emitting region thereof for emitting at least one EM signal that passes through the signal transparent region at a non-zero angle relative to the underlying layer. In some non-limiting examples, the device may be an optoelectronic device, and the first portion may correspond to at least one emitting region thereof. In some non-limiting examples, the device may further include at least one semiconductor layer disposed on the layer, each emitting region including a first electrode and a second electrode, the first electrode being disposed between the substrate and the at least one semiconductor layer, and the at least one semiconductor layer being disposed between the first electrode and the second electrode.

[0038] In some non-limiting examples, a seed material may be deposited on the template layer on the underlayer as at least one seed and adapted to promote coalescence of the particulate material around it to form at least one grain structure. In some non-limiting examples, the seed material may be selected from at least one of ytterbium, silver, a metal, a material having high wetting properties for the particulate material, a nucleation promoting coating material, an organic material, a polycyclic aromatic compound, and a material including a non-metallic element selected from at least one of oxygen, sulfur, nitrogen, and carbon, and any combination of any of these.

[0039] In some non-limiting examples, the co-deposited dielectric material may be co-deposited with a particulate material and adapted to facilitate the formation of the particulate material to form at least one particulate structure. In some non-limiting examples, the co-deposited dielectric material may be selected from at least one of an organic material, a semiconductor, an organic semiconductor, and any combination thereof. In some non-limiting examples, the ratio of the particulate material to the co-deposited dielectric material may be at least one of about 50:1 to 5:1, 30:1 to 5:1, and 20:1 to 10:1. In some non-limiting examples, the ratio of the particulate material to the co-deposited dielectric material may be at least one of about 50:1, 45:1, 40:1, 35:1, 30:1, 25:1, 20:1, 19:1, 15:1, 12.5:1, 10:1, 7.5:1, and 5:1. In some non-limiting examples, the co-deposited dielectric material may have an initial sticking probability of less than 1 relative to the deposition of the particulate material.

[0040] In some non-limiting examples, the at least one patterned material can be deposited on an underlayer to facilitate the formation of the particle material into at least one particle structure. In some non-limiting examples, the at least one particle structure can be disposed on an exposed layer surface of a patterned coating comprising the at least one patterned material. In some non-limiting examples, the at least one particle structure can be surrounded by a patterned coating comprising the at least one patterned material. In some non-limiting examples, the at least one particle structure can be disposed at an interface between the underlayer and the patterned coating. In some non-limiting examples, the at least one patterned material can have at least one of an initial sticking probability for deposition of the particle material thereon of 0.3 or less and an initial sticking probability for deposition of the particle material thereon of a material comprising the underlayer that is less than or equal to 0.3. In some non-limiting examples, the at least one patterning material may have an initial sticking probability for deposition of particulate material that is less than or equal to at least one of 0.9, 0.3, 0.2, 0.15, 0.1, 0.08, 0.05, 0.03, 0.02, 0.01, 0.008, 0.005, 0.003, 0.001, 0.0008, 0.0005, 0.0003, and 0.0001.In some non-limiting examples, the at least one patterning material may have a density of about 0.15-0.0001, 0.1-0.0003, 0.08-0.0005, 0.08-0.0008, 0.05-0.001, 0.03-0.0001, 0.03-0.0003, 0.03-0.0005, 0.03-0. 0008,0.03~0.001,0.03~0.005,0.03~0.008,0.03~0.01,0.02~0.0001,0.02~0.0003,0.02~0.0005,0.02~0.0008,0.02~0.001,0.02~0.005,0.02~0.008,0.02 The deposition may have an initial sticking probability for the particulate material that is at least one of 0.01, 0.01 to 0.0001, 0.01 to 0.0003, 0.01 to 0.0005, 0.01 to 0.0008, 0.01 to 0.001, 0.01 to 0.005, 0.01 to 0.008, 0.008 to 0.0001, 0.008 to 0.0003, 0.008 to 0.0005, 0.008 to 0.0008, 0.008 to 0.001, 0.008 to 0.005, 0.005 to 0.0001, 0.005 to 0.0003, 0.005 to 0.0005, 0.005 to 0.0008, and 0.005 to 0.001. In some non-limiting examples, the at least one patterning material may have a surface energy of less than or equal to at least one of about 24 dynes / cm, 22 dynes / cm, 20 dynes / cm, 18 dynes / cm, 16 dynes / cm, 15 dynes / cm, 13 dynes / cm, 12 dynes / cm, and 11 dynes / cm. In some non-limiting examples, the at least one patterning material may have a surface energy that is at least about 6 dynes / cm, 7 dynes / cm, and 8 dynes / cm. In some non-limiting examples, the at least one patterning material may have a surface energy of at least one of about 10-20 dynes / cm to 13-19 dynes / cm. In some non-limiting examples, the at least one patterning material may have a refractive index for electromagnetic radiation at a wavelength of 550 nm that is less than or equal to at least one of about 1.55, 1.5, 1.45, 1.43, 1.4, 1.39, 1.37, 1.35, 1.32, and 1.3.In some non-limiting examples, the at least one patterning material may have an extinction coefficient of about 0.01 or less for electromagnetic radiation at wavelengths that are at least about one of 600 nm, 500 nm, 460 nm, 420 nm, and 410 nm. In some non-limiting examples, the at least one patterning material may have an extinction coefficient of about 0.05, 0.1, 0.2, and 0.5 for electromagnetic radiation at wavelengths shorter than at least one of 400 nm, 390 nm, 380 nm, and 370 nm. In some non-limiting examples, the at least one patterning material may have a glass transition temperature of about 300° C., 150° C., 130° C., 30° C., 0° C., −30° C., and −50° C. or less. In examples, the at least one patterning material may have a sublimation temperature of at least one of about 100-320°C, 120-300°C, 140-280°C, and 150-250°C.

[0041] In some non-limiting examples, the patterning material may include at least one of fluorine atoms and silicon atoms. In some non-limiting examples, the patterning material may include fluorine and carbon. In some non-limiting examples, the atomic ratio of fluorine to carbon may be at least one of about 1, 1.5, and 2. In some non-limiting examples, the patterning material may include an oligomer. In some non-limiting examples, the patterning material may include a compound having a molecular structure including a backbone and at least one functional group attached thereto. In some non-limiting examples, the compound may include at least one of a siloxane group, a silsesquioxane group, an aryl group, a heteroaryl group, a fluoroalkyl group, a hydrocarbon group, a phosphazene group, a fluoropolymer, and a metal complex. In some non-limiting examples, the molecular weight of the compound may be less than or equal to at least one of about 5,000 g / mol, 4,500 g / mol, 4,000 g / mol, 3,800 g / mol, and 3,500 g / mol. In some non-limiting examples, the molecular weight may be at least about 1,500 g / mol, 1,700 g / mol, 2,000 g / mol, 2,200 g / mol, and 2,500 g / mol. In some non-limiting examples, the molecular weight may be at least one of about 1,500-5,000 g / mol, 1,500-4,500 g / mol, 1,700-4,500 g / mol, 2,000-4,000 g / mol, 2,200-4,000 g / mol, and 2,500-3,800 g / mol. In some non-limiting examples, the percentage of the compound's molar weight attributable to the presence of fluorine atoms may be at least one of about 40-90%, 45-85%, 50-80%, 55-75%, and 60-75%. In some non-limiting examples, the fluorine atoms may comprise a majority of the compound's molar weight. In some non-limiting examples, at least one patterning material may include an organic-inorganic hybrid material.

[0042] In some non-limiting examples, the at least one patterning material may include a first patterning material having a first initial sticking probability and a second patterning material having a second initial sticking probability that exceeds the first initial sticking probability. In some non-limiting examples, the second patterning material may include at least one of a nucleation-promoting coating material, an electron transport layer material, Liq, lithium fluoride, an organic material, a polycyclic aromatic compound, a material containing a non-metal element selected from at least one of oxygen, sulfur, nitrogen, and carbon, and any combination of any of these. In some non-limiting examples, the first patterning material may be a nucleation-inhibiting coating material.

[0043] In some non-limiting examples, the at least one patterning material can have a first surface energy that is less than or equal to a second surface energy of the particulate material.

[0044] In some non-limiting examples, the at least one particle may impart an optical response to incident electromagnetic radiation selected from a change in an attribute of the device that is at least a hue of absorption, scattering, resonance, crystallization, refractive index, and extinction coefficient of the radiation. In some non-limiting examples, the change in absorption may be selected from an increase, decrease, peak intensity, and wavelength shift. In some non-limiting examples, the optical response may affect a wavelength range of radiation selected from at least one of the visible spectrum, the infrared (IR) spectrum, the near-IR (NIR) spectrum, the ultraviolet (UV) spectrum, the UVA spectrum, the UVB spectrum, subranges thereof, and any combination of any of these. In some non-limiting examples, the optical response may affect a characteristic size, length, width, diameter, height, size distribution, shape, surface coverage, composition, deposition density, degree of dispersion, material, degree of aggregation, and other properties of the at least one particle structure. The particle size distribution may be affected by at least one particle characteristic selected from at least one of the following: 1) a characteristic size of about 200 nm or less; 2) a characteristic diameter of about 1-200 nm, 1-160 nm, 1-100 nm, 1-50 nm, and 1-30 nm. In some non-limiting examples, the particle size distribution may be affected by at least one particle characteristic selected from at least one of the following: 1) a characteristic size of about 200 nm or less; 3) a characteristic diameter of about 1-200 nm, 1-160 nm, 1-100 nm, 1-50 nm, and 1-30 nm.

[0045] In some non-limiting examples, the at least one particle structure may include at least one first particle structure having a first range of characteristic sizes and at least one second particle structure having a second range of characteristic sizes. In some non-limiting examples, the first range may be selected from at least one of approximately 1-49 nm, 10-40 nm, 5-30 nm, 10-30 nm, 15-35 nm, 20-35 nm, and 25-35 nm, and the second range may be selected from at least 50 nm and at least one of approximately 50-250 nm, 50-200 nm, 60-150 nm, 60-100 nm, and 60-90 nm. In some non-limiting examples, the optical response may be affected by layer properties of layers adjacent to the at least one particle structure. In some non-limiting examples, the layer properties may include at least one of material, layer thickness, refractive index, temperature, pressure, duration, deposition rate, and deposition environment selected from at least one of these processes, and any combination of any of these.

[0046] In some non-limiting examples, the radiation can engage the device along an optical path in at least a first direction that is at a non-zero angle relative to the plane of the underlying layer. In some non-limiting examples, the radiation can be at least one of emitted by the device, incident on the device, and at least partially transmitted through the device.

[0047] According to a broad aspect, a method for controllably selecting the formation of at least one grain structure on an underlayer during the manufacture of a semiconductor device having multiple layers, the method comprising: depositing at least one layer including the underlayer; and exposing an exposed layer surface of the underlayer to a flux of particulate material such that the particulate material contacts a contact material selected from at least one of a seed material, a co-deposited dielectric material, and at least one patterned material, wherein the particulate material coalesces to place at least one particle on the underlayer.

[0048] In some non-limiting examples, the method may further include the act of covering the at least one grain structure and the underlayer with at least one overlayer.

[0049] In some non-limiting examples, the exposing operation may be preceded by an operation of restricting formation of the at least one grain structure to a first portion of the lateral side of the device. In some non-limiting examples, the restricting operation may include restricting exposure of the flux to the first portion. In some non-limiting examples, the restricting operation may include seeding a seed material to a template layer on the first portion of the underlayer. In some non-limiting examples, the restricting operation may include applying at least one patterning material to a patterned coating on the first portion of the underlayer.

[0050] In some non-limiting examples, the applying operation may include interposing a shadow mask between the at least one patterning material and the underlying layer when applying the at least one patterning material.

[0051] In some non-limiting examples, the exposing operation may include co-depositing a particulate material with a co-deposited dielectric material. In some non-limiting examples, the exposing operation may include at least one of an open-mask deposition and a mask-free deposition. DETAILED DESCRIPTION OF THE INVENTION

[0052] stacked devices The present disclosure relates generally to stacked semiconductor devices, and more particularly to optoelectronic devices. Optoelectronic devices may generally encompass any device that converts electrical signals into photons and vice versa. In some non-limiting examples, stacked semiconductor devices, including but not limited to optoelectronic devices, can function as surfaces 1001 (FIG. 8A), including but not limited to display panel 840 (FIG. 8A), of user device 800 (FIG. 10).

[0053] Those skilled in the art will understand that while the present disclosure is directed to optoelectronic devices, the principles may be applicable to any panel having multiple layers, including, but not limited to, as a thin film, and in some non-limiting examples, at least one layer of conductive deposited material 1831 (FIG. 18) that can pass electromagnetic (EM) signals, in whole or in part, at an angle to the plane of at least one of the layers.

[0054] 1, there can be seen a cross-sectional view of an exemplary laminated device 100. In some non-limiting examples, as shown in more detail in FIG. 21, the device 100 can comprise multiple layers deposited on a substrate 10.

[0055] A horizontal axis identified as the X-axis may be shown along with a longitudinal axis identified as the Z-axis. A second horizontal axis identified as the Y-axis may be shown as substantially transverse to both the X-axis and the Z-axis. At least one of the horizontal axes may define a lateral side of the device 100. The longitudinal axes may define a lateral side of the device 100.

[0056] The layers of device 100 may extend with lateral sides substantially parallel to the plane defined by the lateral axis. Those skilled in the art will understand that the substantially planar representation shown in FIG. 1 may, in some non-limiting examples, be an abstraction for purposes of illustration. In some non-limiting examples, there may be localized substantially planar layers of different thicknesses and dimensions across the lateral extent of device 100, which in some non-limiting examples includes the substantially complete absence of layers and / or layers separated by non-planar transition regions (including lateral gaps and even discontinuities).

[0057] Thus, for illustrative purposes, device 100 may be shown in cross section as a substantially layered structure of substantially parallel planar layers, although such a device may locally exhibit a variety of topographies for defining features, each of which may substantially exhibit the layered profile described in cross section.

[0058] particle structure The particle structures 121, including but not limited to those as discontinuous layer 120, utilize plasmons, a branch of nanophotonics that studies the resonant interaction of EM radiation with metals.

[0059] Those skilled in the art will appreciate that certain metal NPs may exhibit surface plasmon (SP) excitations and / or coherent oscillations of free electrons, such that such NPs may absorb and / or scatter light in wavelength (sub)ranges of the EM spectrum, including, but not limited to, the visible spectrum and / or subranges thereof. The (sub)ranges of the EM spectrum (absorption spectrum) in which the absorption of such localized SP (LSP) excitations may be concentrated, the refractive index, and / or extinction coefficient, and / or the optical response, including coherent oscillations, may vary depending on, but not limited to, the characteristic size, length, width, diameter, height, size distribution, shape, surface coverage, composition, deposition density, dispersity, and / or properties of the nanostructure (including, but not limited to, the nanostructure). The properties of such NPs can be tuned by varying at least one of the following: the material and / or aggregation of the NP structure, and / or the medium in its vicinity.

[0060] With respect to particle structure 121, such optical response may include absorption of EM radiation incident thereon, thereby reducing its reflection and / or shifting it to lower or higher wavelengths (sub-ranges) of the EM spectrum, including but not limited to the visible spectrum and / or sub-ranges thereof.

[0061] Thus, as shown in FIG. 1 , in some non-limiting examples, a layered semiconductor device 100 may have at least one particle (collectively, particle structure 121) including, but not limited to, nanoparticles (NPs), islands, plates, isolated clusters, and / or networks, as a layer thereof, which may be, in non-limiting examples, a discontinuous layer 120, controllably disposed on and / or above an exposed layer surface 11 of an underlying layer 110 of multiple layers of device 100 disposed on its substrate 10.

[0062] Those skilled in the art will understand that at least one grain structure 121 may be present in a layer without necessarily forming a discontinuous layer 120. However, given that the formation of at least one grain structure 121 in a layer may typically result in the formation of a discontinuous layer 120, for ease of explanation only, reference herein to the formation of at least one grain structure 121 means that, in some non-limiting examples, such grain structure 121 may include that discontinuous layer 120, even if not stated otherwise.

[0063] In some non-limiting examples, at least some of the grain structures 121 may be separated from one another. In other words, in some non-limiting examples, the discontinuous coating 120 may include features including grain structures 121 that may be physically separated from one another such that at least one grain structure 121 does not form a closed coating 1440.

[0064] In some non-limiting examples, at least one upper layer 130 of the multiple layers of device 100 may be deposited on the exposed layer surfaces 11 of grain structures 121 and the exposed layer surfaces 11 of the underlying layers 110 therebetween. In some non-limiting examples, at least one upper layer 130 may be a CPL 1215.

[0065] In some non-limiting examples, device 100 may be configured to substantially allow EM radiation to engage exposed layer surface 11 of device 100 along an optical path that is substantially parallel to a first directional axis indicated by arrow OC at a non-zero angle relative to a plane of the underlying layer defined by multiple horizontal axes.

[0066] In the present disclosure, the propagation of EM radiation in a given direction in time, as indicated, but not limited to, by arrow OC, can give rise to the directional convention that a first layer can be said to be "in front of," "in front of," and / or "in front of" a second layer in the optical path (in the direction of propagation of the EM radiation).

[0067] The optical path may correspond to a direction in which EM radiation emitted by device 100 can be extracted therefrom (e.g., as indicated by the orientation of arrow OC in the figure) and / or a direction in which EM radiation can be incident on exposed layer surface 11 of device 100 and propagate at least partially therethrough, including, but not limited to, the EM radiation can be incident on exposed layer surface 11 of substrate 10 opposite to that on which various layers and / or coatings have been deposited and transmitted at least partially through substrate 10 and various layers and / or coatings (not shown).

[0068] Those skilled in the art will understand that there may be scenarios in which EM radiation is emitted by device 100 and, at the same time, EM radiation is incident on and at least partially transmitted through exposed layer surface 11 of device 100. In such scenarios, the direction of the optical path is determined by the direction in which the EM radiation emitted by device 100 can be extracted, unless the context indicates otherwise. In some non-limiting examples, EM radiation that is transmitted entirely through device 100 may propagate in the same or similar direction. Nevertheless, nothing in this disclosure should be construed as limiting the propagation of EM radiation entirely through device 100 to a direction that is the same as or similar to the direction of propagation of EM radiation emitted by device 100.

[0069] In some non-limiting examples, device 100 may be a top-emitting optoelectronic device in which EM radiation (including, but not limited to, in the form of light and / or photons) may be emitted by device 100 in at least a first direction.

[0070] Although not shown, in some non-limiting examples, device 100 may include at least one signal transparent region 820 (FIG. 8A) through which EM radiation incident on exposed layer surface 11 of substrate 10 having various layers and / or coatings deposited thereon may be transmitted through substrate 10 and the various layers and / or coatings in at least a first direction, which in such a scenario would be opposite to the direction indicated by arrow OC in the figure.

[0071] In some non-limiting examples, the location of at least one grain structure 121 within various layers of device 100 (i.e., selective identification of which of the various layers of device 100 serves as a base layer 110 onto which grain structure 121 can be deposited) may be controllably selected to achieve an effect regarding the optical response exhibited by grain structure 121 when placed in such a location.

[0072] In some non-limiting examples, the particle structure 121 may be controllably selected to be limited to portions 301, 302 of the lateral sides of the device 100 (including, but not limited to, corresponding to the emission region 810 of the device 100, FIG. 8A) to selectively limit the achievement of effects related to the optical response exhibited by the particle structure 121 to such portions 301, 302 of the lateral sides of the device 100.

[0073] In some non-limiting examples, the particle structures 121 may be controllably selected to have characteristic sizes, lengths, widths, diameters, heights, size distributions, shapes, surface coverages, configurations, deposition densities, dispersities, and / or compositions to achieve effects related to the optical response exhibited by the particle structures 121.

[0074] Those skilled in the art will appreciate that, due to possible stacking and / or clustering of monomers and / or atoms, their actual size, height, weight, thickness, shape, profile, and / or spacing, the at least one grain structure 121 may, in some non-limiting examples, be substantially non-uniform in terms of the mechanism by which the material is deposited. Furthermore, although the at least one grain structure 121 is shown as having a given profile, this is intended for illustrative purposes only and does not dictate its size, height, weight, thickness, shape, profile, and / or spacing.

[0075] In some non-limiting examples, the at least one grain structure 121 can have a characteristic dimension of about 200 nm or less. In some non-limiting examples, the at least one grain structure 121 can have a characteristic diameter that can be at least one of about 1-200 nm, 1-160 nm, 1-100 nm, 1-50 nm, or 1-30 nm.

[0076] In some non-limiting examples, the at least one particle structure 121 may be and / or may include discrete metal plasmonic islands or clusters.

[0077] In some non-limiting examples, at least one grain structure 121 may include a grain material.

[0078] In some non-limiting examples, such grain structure 121 may be formed by depositing a small amount, having an average layer thickness that may be on the order of a few or a fraction of an angstrom, of grain material on exposed layer surface 11 of underlayer 110. In some non-limiting examples, exposed layer surface 11 may be a nucleation promoting coating (NPC) 2020 (FIG. 20C).

[0079] In some non-limiting examples, the particulate material may include at least one of Ag, Yb, and / or magnesium (Mg).

[0080] In some non-limiting examples, the particulate material may include an element selected from at least one of potassium (K), sodium (Na), lithium (Li), barium (Ba), cesium (Cs), Yb, Ag, gold (Au), Cu, aluminum (Al), Mg, Zn, Cd, tin (Sn), or yttrium (Y). In some non-limiting examples, the element may include at least one of K, Na, Li, Ba, Cs, Yb, Ag, Au, Cu, Al, or Mg. In some non-limiting examples, the element may include at least one of Cu, Ag, or Au. In some non-limiting examples, the element may be Cu. In some non-limiting examples, the element may be Al. In some non-limiting examples, the element may include at least one of Mg, Zn, Cd, or Yb. In some non-limiting examples, the element may include at least one of Mg, Ag, Al, Yb, or Li. In some non-limiting examples, the element may include at least one of Mg, Ag, or Yb. In some non-limiting examples, the element may include at least one of Mg or Ag. In some non-limiting examples, the element may be Ag.

[0081] In some non-limiting examples, the particle material may include a pure metal. In some non-limiting examples, at least one particle structure 121 may be a pure metal. In some non-limiting examples, at least one particle structure 121 may be at least one of pure Ag or substantially pure Ag. In some non-limiting examples, the substantially pure Ag may have a purity of at least one of about 95%, 99%, 99.9%, 99.99%, 99.999%, or 99.9995%. In some non-limiting examples, at least one particle structure 121 may be at least one of pure Mg or substantially pure Mg. In some non-limiting examples, the substantially pure Mg may have a purity of at least one of about 95%, 99%, 99.9%, 99.99%, 99.999%, or 99.9995%.

[0082] In some non-limiting examples, at least one grain structure 121 can include an alloy. In some non-limiting examples, the alloy can be at least one of an Ag-containing alloy, an Mg-containing alloy, or an AgMg-containing alloy. In some non-limiting examples, the AgMg-containing alloy has an alloy composition ranging from about 1:10 (Ag:Mg) to about 10:1.

[0083] In some non-limiting examples, the particulate material may include other metals in place of or in combination with Ag. The particle material may include an alloy with one other metal. In some non-limiting examples, the particle material may include an alloy of Ag and at least one of Mg or Yb. In some non-limiting examples, such an alloy may be a binary alloy having a composition of about 5-95% Ag by volume, with the remainder being the other metal. In some non-limiting examples, the particle material may include Ag and Mg. In some non-limiting examples, the particle material may include an Ag:Mg:Yb alloy. It may include an Ag:Mg alloy having a composition in a volume ratio of about 1:10 to 10:1. In some non-limiting examples, the particle material may include Ag and Yb. In some non-limiting examples, the particle material may include Yb. It may include a Yb:Ag alloy having a composition in a volume ratio of about 1:20 to 10:1. In some non-limiting examples, the particle material may include Mg and Yb. In some non-limiting examples, the particle material may include an Mg:Yb alloy. In some non-limiting examples, the particulate material can include an Ag:Mg:Yb alloy.

[0084] In some non-limiting examples, the at least one grain structure 121 may include at least one additional element. In some non-limiting examples, such additional element may be a non-metallic element. In some non-limiting examples, the non-metallic material may be at least one of O, S, N, or C. Those skilled in the art will appreciate that in some non-limiting examples, such additional elements may be incorporated into the at least one grain structure 121 as contaminants due to the presence of such additional elements in the source material, the equipment used for deposition, and / or the vacuum chamber environment. In some non-limiting examples, such additional elements may form compounds with other elements of the at least one grain structure 121. In some non-limiting examples, the concentration of the non-metallic element in the grain material may be less than or equal to at least one of about 1%, 0.1%, 0.01%, 0.001%, 0.0001%, 0.00001%, 0.000001%, or 0.0000001%. In some non-limiting examples, at least one grain structure 121 can have a composition in which the total amount of O and C therein is less than or equal to at least one of about 10%, about 5%, about 1%, about 0.1%, about 0.01%, about 0.001%, about 0.0001%, about 0.00001%, about 0.000001%, or about 0.0000001%.

[0085] In some non-limiting examples, the characteristics of the at least one particle structure 121 can be evaluated according to at least one of several criteria, including, but not limited to, the characteristic size, length, width, diameter, height, size distribution, shape, composition, surface coverage, deposition distribution, dispersibility, and / or the presence and / or degree of agglomerated instances of particulate material formed on a portion of the exposed layer surface 11 of the base layer 110.

[0086] In some non-limiting examples, evaluation of at least one grain structure 121 according to such at least one criterion may be performed in a manner including, but not limited to, measuring and / or calculating at least one attribute of at least one grain structure 121 using various imaging techniques including, but not limited to, at least one of transmission electron microscopy (TEM), atomic force microscopy (AFM), and / or scanning electron microscopy (SEM).

[0087] Those skilled in the art will appreciate that such evaluation of the at least one grain structure 121 may depend to a large extent and / or to a small extent on the extent of the exposed layer surface 11 under consideration, which may include, in some non-limiting examples, regions and / or areas thereof. In some non-limiting examples, the at least one grain structure 121 may be evaluated over the entire extent of a first lateral side and / or a second lateral side substantially transverse thereto of the exposed layer surface 11 of the foundation layer 110. In some non-limiting examples, the at least one grain structure 121 may be evaluated over an extent that includes at least one observation window applied to (a portion of) the at least one grain structure 121.

[0088] In some non-limiting examples, the at least one observation window may be located at at least one of a periphery, an interior location, and / or a grid coordinate of a lateral side of the exposed layer surface 11. In some non-limiting examples, multiple at least one observation windows may be used in evaluating the at least one grain structure 121.

[0089] In some non-limiting examples, the observation window may correspond to a field of view of an imaging technique applied to evaluate the at least one particle structure 121, including, but not limited to, at least one of a TEM, an AFM, and / or an SEM. In some non-limiting examples, the observation window may correspond to a given magnification level, including, but not limited to, at least one of 2.00 μm, 1.00 μm, 500 nm, or 200 nm.

[0090] In some non-limiting examples, evaluation of at least one grain structure 121 of the exposed layer surface 11, including but not limited to at least one observation window used, may include calculating and / or measuring by any number of mechanisms, including but not limited to manual counting and / or known estimation techniques, which may, in some non-limiting examples, include curve, polygon, and / or shape-fitting techniques.

[0091] In some non-limiting examples, evaluation of at least one grain structure 121 of its exposed layer surface 11, including but not limited to at least one observation window used, may include calculating and / or measuring the mean, median, mode, maximum, minimum, and / or other probabilistic, statistical, and / or data manipulation of calculated and / or measured values.

[0092] In some non-limiting examples, one of the at least one criteria by which such at least one grain structure 121 may be evaluated may be the surface coverage of the particle material of such (some of) the at least one grain structure 121. In some non-limiting examples, the surface coverage may be represented by a (non-zero) coverage of such (some of) the at least one grain structure 121 by the particle material. In some non-limiting examples, the coverage may be compared to a maximum threshold coverage.

[0093] Those skilled in the art will appreciate that, in some non-limiting examples, surface coverage may be understood to encompass one or both of particle size and deposition density. Thus, in some non-limiting examples, more than one of these three criteria may be positively correlated. Indeed, in some non-limiting examples, a low surface coverage criterion may include some combination of a low deposition density criterion and a low particle size criterion.

[0094] In some non-limiting examples, one of the at least one criteria by which such at least one grain structure 121 may be evaluated may be its characteristic size.

[0095] In some non-limiting examples, at least one grain structure 121 may have a characteristic size that is less than or equal to a maximum threshold size. Non-limiting examples of characteristic sizes may include at least one of height, width, length, and / or diameter.

[0096] In some non-limiting examples, the maximum threshold size can be less than or equal to one of about 75 nm, 70 nm, 60 nm, 50 nm, 45 nm, and 40 nm.

[0097] In some non-limiting examples, substantially all of the grain structures 121 can have a characteristic size that falls within a specified range.

[0098] In some non-limiting examples, such a characteristic size may be characterized by a characteristic length, which in some non-limiting examples may be considered a maximum value of the characteristic size. In some non-limiting examples, such a maximum value may extend along the major axis of the grain structure 121. In some non-limiting examples, the major axis may be understood to be a first dimension extending in a plane defined by a plurality of transverse axes. In some non-limiting examples, the characteristic width may be identified as a characteristic size value of the grain structure 121 that may extend along the minor axis of the grain structure 121. In some non-limiting examples, the minor axis may be understood to be a second dimension extending in the same plane but substantially transverse to the major axis.

[0099] In some non-limiting examples, a characteristic length of at least one grain structure 121 along a first dimension may be less than or equal to a maximum threshold size.

[0100] In some non-limiting examples, a characteristic width of at least one grain structure 121 along the second dimension can be less than or equal to a maximum threshold size.

[0101] In some non-limiting examples, the size of at least one particle structure 121 may be assessed by calculating and / or measuring its characteristic sizes, including, but not limited to, mass, volume, diameter length, perimeter, major axis and / or minor axis.

[0102] In some non-limiting examples, one of the at least one criteria by which such at least one grain structure 121 may be evaluated may be its deposition density.

[0103] In some non-limiting examples, a characteristic size of at least one grain structure 121 may be compared to a maximum threshold size.

[0104] In some non-limiting examples, the deposition density of the at least one grain structure 121 may be compared to a maximum threshold deposition density.

[0105] In some non-limiting examples, at least one of such criteria may be quantified by a numerical metric. In some non-limiting examples, such a metric may be a calculation of dispersity D, which describes the distribution of particle (domain) sizes of particle structure 121, where:

[0106]

number

[0107]

number

[0108]

number

[0109] Those skilled in the art will understand that dispersity is roughly analogous to the polydispersity index (PDI), an average of which is roughly analogous to the concepts of number average molecular weight and weight average molecular weight familiar from organic chemistry, but which applies to the size (domain) as opposed to the molecular weight of the sample particle structure 121.

[0110] Those skilled in the art will also understand that the concept of dispersity may, in some non-limiting examples, be considered a three-dimensional volume concept, while in some non-limiting examples, dispersity may be considered a two-dimensional concept. Accordingly, the concept of dispersity may be used in connection with the observation and analysis of two-dimensional images of at least one particle structure 121, such as may be obtained by using various imaging techniques, including, but not limited to, at least one of TEM, AFM, and / or SEM. It is in this two-dimensional context that the above equations are defined.

[0111] In some non-limiting examples, the dispersity and / or number average of particle (area) size and the (area) size average of particle (area) size can include calculation of at least one of the number average of particle diameter and the (area) size average of particle diameter.

[0112]

number

[0113] In some non-limiting examples, the particle material of the at least one grain structure 121 may be deposited by a mask-free and / or open-mask deposition process.

[0114] In some non-limiting examples, at least one grain structure 121 can have a substantially round shape. In some non-limiting examples, at least one grain structure 121 can have a substantially spherical shape.

[0115] For simplicity, in some non-limiting examples, it can be assumed that the longitudinal extent of each grain structure 121 may be substantially the same (which, by design, need not be measured directly from an SEM image), such that the (area) size of such grain structures 121 may be expressed as a two-dimensional area coverage along a pair of horizontal axes. In this disclosure, references to (area) size may be understood to refer to such two-dimensional concepts, and may be distinguished from sizes (without the prefix "area") that may be understood to refer to one-dimensional concepts, such as linear dimensions.

[0116] Indeed, some initial investigations suggest that, in some non-limiting examples, the longitudinal extent along the longitudinal axis of such grain structures 121 may tend to be small relative to the lateral extent (along at least one of the lateral axes), such that the volumetric contribution of that longitudinal extent may be dwarfed by the volumetric contribution of such lateral extent. In some non-limiting examples, this may be represented by an aspect ratio (ratio of longitudinal extent to lateral extent) that may be 1 or less. In some non-limiting examples, such aspect ratio may be at least one of about 0.1:10, 1:20, 1:50, 1:75, or 1:300 or less.

[0117] In this regard, the above assumption for representing the at least one grain structure 121 as a two-dimensional area coverage (the assumption that the longitudinal extent is substantially the same and can be ignored) may be appropriate.

[0118] In some non-limiting examples, the initial grouping of at least one particle structure 121 ("Group A") may be characterized by at least one of: a substantially low surface coverage of the particle structure(s) 121; a substantially small size of the particle structure(s) 121; a substantially low particle density; and a substantial lack of any agglomerated instances 1213 thereof.

[0119] Referring now to Figure 43A, an exemplary set of three observation windows 4310, 4311, 4312 can be shown, each showing at least one (part of) of the particle structures 121 of group A in a qualitative and purely exemplary sense.

[0120] The at least one grain structure 121 shown within the observation window 4310 may be substantially small, and in some non-limiting examples, may have a size of about 20 nm or less. The at least one grain structure 1211 shown within the observation window 4310 may be substantially widely dispersed and / or separated. In some non-limiting examples, the surface coverage of the at least one grain structure 1211 of the observation window 4310 may be below a maximum threshold coverage.

[0121] Those skilled in the art will understand that in some non-limiting examples, the size of at least one particle structure 1211 within observation window 4310 can be below a maximum threshold size, and in some non-limiting examples, the particle density within observation window 4310 can be below a maximum threshold density. In some non-limiting examples, observation window 4310 can be substantially devoid of agglomerated particles 1213.

[0122] The at least one grain structure 121 shown within the observation window 4311 may have a variety of sizes. In some non-limiting examples, in contrast to the at least one grain structure 1211 shown in the observation window 4310, they may include at least one larger grain structure 1212 in addition to the smaller grain structure 1211, which may have a size that may be in the range of 20-50 nm in some non-limiting examples. Nevertheless, the at least one grain structure 121 shown within the observation window 4311 may remain at least one of widely dispersed and separated. In some non-limiting examples, the surface coverage by the at least one grain structure 121 of the observation window 4311 may be below a maximum threshold coverage.

[0123] Those skilled in the art will understand that in some non-limiting examples, the size of at least one particle structure 121 in the observation window 4311 may be below a maximum threshold size, and in some non-limiting examples, the particle density in the observation window 4311 may be below a maximum threshold density. In some non-limiting examples, the observation window 4311 may be substantially devoid of agglomerated particles 1213.

[0124] The at least one grain structure 121 shown within observation window 4312 may have a variety of sizes. In some non-limiting examples, in contrast to the at least one grain structure 121 shown in at least one of observation windows 4310 and 4311, a predominance of the at least one grain structure 121 in observation window 4312 may be larger grain structures 1212, although some smaller grain structures 1211 may remain. Nonetheless, the at least one grain structure 121 shown within observation window 4312 may remain at least one of widely dispersed and separated. In some non-limiting examples, the surface coverage of the at least one grain structure 121 may be below a maximum threshold coverage.

[0125] Those skilled in the art will understand that in some non-limiting examples, the size of at least one particle structure 121 in the observation window 4312 can be below a maximum threshold size, and in some non-limiting examples, the particle density in the observation window 4312 can be below a maximum threshold density. In some non-limiting examples, the observation window 4312 can be substantially devoid of agglomerated particles 1213.

[0126] Those skilled in the art will understand that at least one particle structure 121 of group A may, in some non-limiting examples, include a discontinuous layer 120, as shown in at least one of observation windows 4310, 4311, and 4312, as non-limiting examples.

[0127] In some non-limiting examples, the initial grouping of at least one particle structure 121 ("Group B") may be characterized by at least one of a substantially high particle density of the particle structure(s) 121, a substantially small size of the particle structure(s) 121, and a substantial absence of agglomerated instances 1213 thereof.

[0128] In some non-limiting examples, as a general observation, at least one grain structure 121 that exceeds at least one of the maximum threshold coverage of the exposed layer surface 11 and the maximum threshold density of the grain structure(s) 121 thereon, and therefore may not be included in Group A, may be understood to be within such Group B, regardless of whether they meet (including but not limited to) or exceed the maximum threshold size of the grain structure(s) 121, provided that they remain substantially devoid of agglomerated instances 1213.

[0129] Referring now to Figure 43B, an exemplary set of three observation windows 4320, 4321, 4322 can be shown, each showing (part of) at least one grain structure 121 of group B, at least in a qualitative and purely exemplary sense.

[0130] In observation window 4320, at least one grain structure 121 shown therein may comprise small grain structures 1211 that may be less than a maximum threshold size. The grain structures 1211 shown therein may not be widely dispersed and / or separated as in at least one of observation windows 4310, 4311, and 4312, in that the particle density of such grain structures 1211 may meet (including but not be limited to) and exceed at least one of a maximum threshold density and a maximum threshold coverage. Even so, in some non-limiting examples, the grain structures 1211 shown therein may be substantially devoid of agglomerates 1213.

[0131] In observation window 4321, the at least one particle structure 121 shown therein may have a variety of sizes. Nevertheless, the at least one particle structure 121 shown therein may not be widely dispersed and / or separated as in at least one of observation windows 4310, 4311, and 4312, in that the particle density may meet (including but not limited to) and exceed at least one of a maximum threshold density and a maximum threshold coverage. Even so, in some non-limiting examples, the at least one particle structure 121 shown therein may remain substantially devoid of agglomerates 1213.

[0132] In observation window 4322, the at least one grain structure 121 shown therein may have a variety of sizes. In some non-limiting examples, in contrast to the at least one grain structure 121 shown in at least one of observation windows 4320 and 4321, the predominance of the at least one grain structure 121 in observation window 4322 may be larger grain structures 1212, although some smaller grain structures 1211 may remain. Nevertheless, the at least one grain structure 121 shown therein may be present in a region where the particle density meets (including but not limited to) and exceeds at least one of a maximum threshold density and a maximum threshold coverage. Even so, in some non-limiting examples, at least one particle structure 121 shown therein can remain substantially devoid of agglomerates 1213.

[0133] Those skilled in the art will understand that at least one particle structure 121 of group B may, in some non-limiting examples, comprise a discontinuous layer 120, as shown in at least one of observation windows 4320, 4321, and 4322, as non-limiting examples.

[0134] Those skilled in the art will appreciate that, in some non-limiting examples, the agglomerated example 1213 may be understood to be the product of the coalescence of multiple grain structures 121 into a single, distinguishable structure during the deposition process. In some non-limiting examples, the agglomerated example 1213 may be characterized by at least one feature, including, but not limited to, at least one of an irregular, undulating perimeter, the presence of multiple scallops, depressions therein, openings therein, and a topology having at least one elongated feature. In some non-limiting examples, such elongated feature may extend substantially in at least one of a horizontal and vertical aspect.

[0135] In contrast, one skilled in the art will understand that in some non-limiting examples, grain structures 121 may continue to grow in size during the deposition process without necessarily agglomerating with other grain structure(s) 121. In some non-limiting examples, such grain structures 121 may be characterized by at least one feature, including but not limited to, at least one of a substantially flat and smooth periphery substantially lacking at least one of scallops, depressions, and openings therein, and having a topology that is at least one of substantially circular, with its minor axis being substantially the same as its major axis.

[0136] Thus, in some non-limiting examples, an aggregated example 1213 may be distinguished from a non-aggregated particle structure 121, including but not limited to, for purposes of the present disclosure, with respect to at least one of a number of characteristics, including at least one of a minimum threshold size, a minimum threshold ratio of its minor axis to its major axis, a minimum threshold ratio of its major axis to its circumference, a minimum threshold number of openings therein, and a minimum threshold coverage of openings relative to its area.

[0137] In some non-limiting examples, a portion of the agglomerated instances 1213 may be compared to a maximum threshold of agglomeration. In some non-limiting examples, the maximum threshold of agglomeration may be expressed as a maximum threshold number of agglomerated instances. In some non-limiting examples, the maximum threshold of agglomeration may be expressed as a maximum threshold coverage of the particle structure 121 by the agglomerated instances 1213. In some non-limiting examples, the maximum threshold of agglomeration may be expressed as a maximum threshold size of at least one individual agglomerated instance 1213.

[0138] In some non-limiting examples, an initial grouping of at least one particle structure 121 ("Group C") can be characterized by a substantial amount of particle structure 121 agglomeration.

[0139] In some non-limiting examples, as a general observation, at least one particle structure 121 that exceeds the maximum threshold for aggregation and therefore is not included in Group A may be understood to be included in such Group C, regardless of whether it meets (including but not limited to) or exceeds at least one of the maximum threshold coverage of the exposed layer surface 11, the maximum threshold density of the particle structure(s) 121 thereon, and the maximum threshold size thereof.

[0140] Referring now to Figure 43C, an exemplary set of four observation windows 4330, 4331, 4332, 4333 can be shown, each window showing (part of) at least one grain structure 121 of group C, at least in a qualitative and purely exemplary sense.

[0141] In observation window 4330, at least one grain structure 121 shown therein may comprise a small grain structure 1211 that is less than a maximum threshold size. In some non-limiting examples, it can be seen that multiple grain structures 1211 begin to coalesce together to form an aggregated instance 1213, such that the maximum threshold for aggregation may be met (including but not limited to) and exceeded, thereby leading to classification as at least one grain structure 121 of group C.

[0142] In observation window 4331, the at least one grain structure 121 shown therein may have a variety of sizes. In some non-limiting examples, as shown, it can be seen that multiple grain structures 121, primarily grain structure 1211, begin to coalesce together to form aggregate instance 1213, such that a maximum threshold for aggregation may be met (including but not limited to) and exceeded, thereby leading to classification as at least one grain structure 121 of group C.

[0143] In observation window 4332, the at least one grain structure 121 shown therein may have a variety of sizes. In some non-limiting examples, as shown, it can be seen that multiple grain structures 121, primarily larger grain structures 1212, begin to coalesce together to form aggregate instances 1213, such that a maximum threshold for aggregation may be met (including but not limited to) and exceeded, thereby leading to classification as at least one grain structure 121 of group C.

[0144] In the observation window 4333, the at least one grain structure 121 shown therein can have a variety of sizes. In some non-limiting examples, it can be seen that multiple grain structures 121 begin to coalesce together such that they begin to form agglomerates 1213 and a maximum threshold for agglomeration can be met, including but not limited to, exceeded, thereby leading to classification as at least one grain structure 121 of Group C.

[0145] 43C can be understood to include similar types of grain structures 121, i.e., smaller grain structures 1211 can tend to coalesce with other smaller grain structures 1211, and larger grain structures 1212 can tend to coalesce with other larger grain structures 1212, although one skilled in the art will understand that the agglomeration example 1213 will be understood to not necessarily be so limited. Rather, there can be agglomeration examples 1213 that include coalescence of smaller grain structures 1211 and larger grain structures 1212.

[0146] Further, although not necessarily shown in FIG. 43C, in some non-limiting examples, at least one of the particle structures 121 and agglomeration examples 1213 shown therein may or may not be widely dispersed and / or separated such that the particle density of such at least one of the particle structures 121 and agglomeration examples 1213 may or may not meet, including but not limited to, exceeding at least one of a maximum threshold density and a maximum threshold coverage.

[0147] Those skilled in the art will understand that at least one particle structure 121 of group C may, in some non-limiting examples, include a discontinuous layer 120, as shown as a non-limiting example in at least one of observation windows 4330, 4331, 4332, and 4333.

[0148] Thus, in some non-limiting examples, the discontinuous layer 120 can include at least one grain structure 121 from any one of groups AC.

[0149] In some non-limiting examples, one skilled in the art may It will be appreciated that deposition chunk 1214 may be understood to be the product of still further coalescence of multiple aggregate instances 1213 into a more distinguishable single structure during the deposition process. In some non-limiting examples, deposition chunk 1214 may be characterized by one or more properties including, but not limited to, a topology having at least one elongated feature extending along a substantial portion of the dimension of the observation window. In some non-limiting examples, such elongated feature may extend at least one of substantially laterally and substantially parallel to the plane of the exposed layer surface 11 of the underlying material.

[0150] In some non-limiting examples, as the deposition process continues beyond an intermediate stage, which may, in some non-limiting examples, result in at least one grain structure 121 of group C, further coalescence of that grain structure 121 may cause multiple agglomerated instances 1213 to further coalesce together, resulting in at least one deposited chunk 1214. As at least one of the number and size of the at least one deposited chunk 1214 increases, in some non-limiting examples, there may be a corresponding decrease in the number of discrete non-agglomerated grain structures 121, and in some non-limiting examples, there may be a corresponding decrease in the number of discrete agglomerated instances 1213.

[0151] In some non-limiting examples, such an initial grouping of at least one grain structure 121 (“Group D”) can be characterized by the presence of at least one deposition chunk 1214 .

[0152] Referring now to Figure 43D, an exemplary set of three observation windows 4340, 4341, 4342 can be shown, each showing, in a qualitative and purely exemplary sense, at least one of (part of) at least one particle structure 121 of group D.

[0153] In the observation window 4340, at least one particle structure 121, including but not limited to those shown in Figures 43A, 43B, and 43C, coalesces to form at least one agglomerated instance 1213, wherein at least one of such particle structure 121 and such at least one agglomerated instance 1213 may further coalesce to form at least one deposited chunk 1214, thus leading to classification as at least one particle structure 121 of group D.

[0154] In the observation window 4341, the at least one grain structure 121, the agglomerated instance 1213, and in some non-limiting examples, the deposition chunks 1214 further coalesce to form larger areas of deposition chunks 1214, thereby reducing the number of at least one of the at least one grain structure 121 and the agglomerated instance 1213. In some non-limiting examples, there can also be a reduction in the number of deposition chunks 1214 as multiple such deposition chunks 1214 coalesce to form larger sized deposition chunks 1214.

[0155] It can be seen that further coalescence may have occurred in observation window 4342. As shown, the deposited chunks 1214, and in some non-limiting examples, at least one aggregated instance 1213, may begin to form a connected network 1215 of such deposited chunks 1214.

[0156] Although not necessarily shown in FIG. 43D , at least one of the at least one particle structure 121, agglomerated instances 1213, deposited chunks 1214, and their connected networks 1215 shown therein may or may not be widely dispersed and / or separated such that the particle density of such at least one of the at least one particle structure 121, agglomerated instances 1213, deposited chunks 1214, and their connected networks 1215 can meet, including but not limited to, exceeding at least one of a maximum threshold density and a maximum threshold coverage.

[0157] Those skilled in the art will understand that at least one of the at least one particle structure 121 of group D may, in some non-limiting examples, include an intermediate stage, as shown as a non-limiting example in at least one of observation windows 4330, 4331, 4332, 4333.

[0158] Those skilled in the relevant art will understand that, in some non-limiting examples, an observation window in a layer of at least one grain structure 121 including first portion 301 ( FIG. 3 ) and third portion 2003 ( FIG. 20 ) (as part of and / or in addition to first portion 301) can be considered to be at least one grain structure 121 of one group, for example, group A, in an interior region of first portion 301, while another observation window located in the same layer but in third portion 2003 adjacent second portion 302 ( FIG. 3 ) can be considered to be at least one grain structure 121 of another group, for example, group D. In some non-limiting examples, the characterization of such at least one grain structure 121 observation window can gradually move from group A to at least one of groups B and C as they move from the interior region to the region adjacent second portion 302. In some non-limiting examples, such at least one grain structure 121 may be characterized as having at least one of substantially sparse coverage, substantially sparse coverage particle density, and smaller grain structure 1211 in such interior region, gradually reflecting at least one of greater coverage and larger grain structure 1212, increasing at least one of agglomerated instances 1213 and deposited chunks 1214, including its bond network 1215, as it moves from such interior region to such region proximate the second portion 302.

[0159] Those skilled in the art will understand that in some non-limiting examples, the presence of at least one dendrite and at least one dendritic recess may be characteristic of at least one grain structure 121 of Group D.

[0160] Those skilled in the art will understand that continuing the deposition process beyond an intermediate stage involving at least one particle structure 121 of group D may result in further coalescence, and in some non-limiting examples, may lead to the formation of a substantially closed coating 1440 (FIG. 14).

[0161] Those skilled in the art will appreciate that, taking into account the non-deterministic nature of the deposition process, and in particular the presence of anomalies, including, but not limited to, defects and / or non-uniformities on the exposed layer surface 11 of the underlying material, including, but not limited to, step edges, chemical impurities, bonding sites, kinks, and / or contaminants thereon, and the resulting formation of grain structures 121, their coalescence non-uniformity as the deposition process continues, as well as the uncertainty in the size and / or location of the observation window and the inherent complexity and variability in the calculations and / or measurements of their characteristic size, length, width, diameter, height, size distribution, shape, surface coverage, configuration, deposition density, dispersity, composition, aggregation, etc., there can be considerable variability in the features and / or topology within the observation window.

[0162] In this disclosure, for simplicity of explanation, specific details of particulate materials, including but not limited to layer thickness profiles and / or edge profiles, have been omitted.

[0163] In some non-limiting examples, the characteristic size of the grain structures 121 (in the observation window used) may reflect a statistical distribution.

[0164] In some non-limiting examples, the absorption spectrum intensity is determined by the specific size of the characteristic particle. For fabrics, there may be a tendency proportional to the deposition density of the at least one particle structure 121.

[0165] In some non-limiting examples, the particle structure 121 t The characteristic size of (the observation window used) may be centered around a single value and / or in a relatively narrow range.

[0166] In some non-limiting examples, the particle structure 121 tThe characteristic size of the grain structure 121 (within the observation window used) may be centered around multiple values ​​and / or in multiple relatively narrow ranges. As a non-limiting example, at least one grain structure 121 may exhibit such multimodal behavior, where there are multiple different values ​​and / or ranges around which the characteristic size of the grain structure 121 (within the observation window used) may be centered.

[0167] In some non-limiting examples, the at least one grain structure 121 may include a first at least one grain structure 1211 having a first range of characteristic sizes and a second at least one grain structure 1212 having a second range of characteristic sizes. In some non-limiting examples, the first characteristic size range may correspond to a size of about 50 nm or less, and the second characteristic size range may correspond to a size of at least 50 nm. As a non-limiting example, the first characteristic size range may correspond to a size of about 1-49 nm, and the second characteristic size range may correspond to a size of about 50-300 nm. In some non-limiting examples, a majority of the first grain structures 1211 may have a characteristic size within at least one range of about 10-40 nm, 5-30 nm, 10-30 nm, 15-35 nm, 20-35 nm, or 25-35 nm. In some non-limiting examples, the majority of the second grain structures 1212 can have a characteristic size in at least one range of approximately 50-250 nm, 50-200 nm, 60-150 nm, 60-100 nm, or 60-90 nm. In some non-limiting examples, the first grain structures 1211 and the second grain structures 1212 can be interspersed with each other.

[0168] To study the formation of such multimodal particle structures 121, a series of five samples was fabricated. Each sample was prepared by depositing an approximately 20 nm thick organic semiconductor layer 730 on a glass substrate, followed by an approximately 34 nm thick Ag layer, followed by an approximately 30 nm thick patterned coating 323, and then exposing the surface of the patterned coating 323 to an Ag vapor flux 1832 (FIG. 18). SEM images of each sample were taken at various magnifications.

[0169] 2A shows an enlarged SEM image 200 of a first sample and a further SEM image 205. As can be seen in image 200, there are several first grain structures 1211 that may tend to be concentrated around a first small characteristic size, and fewer second grain structures 1212 that may tend to be concentrated around a second larger characteristic size. Grain structures 1211 as a function of characteristic grain size t The plot 210 of counts can show that the majority of the first grain structures 1211 can be concentrated around about 30 nm. Analysis shows that the surface coverage of the observation window of the image 200 of the first grain structures 1211 having a characteristic size of about 50 nm or less was about 38%, while the surface coverage of the observation window of the image 200 of the second grain structures 1212 having a characteristic size of at least about 50 nm was about 1%.

[0170] 2B shows an SEM image 220 of the second sample and a further, enlarged SEM image 225. As can be seen from image 220, some first grain structures 1211, which may tend to be concentrated around a first characteristic size, continue to be present, while some second grain structures 1212, which may tend to be concentrated around a second characteristic size, may become larger. Furthermore, such second grain structures 1212 may tend to become more pronounced. Grain structures 121 as a function of characteristic grain size t Plot of counts of 230 Two distinguishable peaks can be seen: a large peak for the first particle structure 1211 centered around about 30 nm, and a smaller peak for the second particle 1212 centered around about 75 nm. Analysis shows that the surface coverage of the observation window in the image 220 of the first particle structure 1211, which has a characteristic size of about 50 nm or less, was about 23%, while the surface coverage of the observation window in the image 220 of the second particle structure 1212, which has a characteristic size of at least about 50 nm, was about 10%.

[0171] 2C shows an SEM image 240 of the third sample and a further enlarged SEM image 245. As can be seen from image 240, some first grain structures 1211, which may tend to be concentrated around a first characteristic size, continue to be present, while some second grain structures 1212, which may tend to be concentrated around a second characteristic size, may be even larger than in the second sample. t Plot 250 of the counts can show two distinguishable peaks: a large peak for the first grain structure 1211 centered around about 30 nm, and a smaller (but larger than shown in plot 230) peak for the second grain structure 1212 centered around about 75 nm. Analysis shows that the surface coverage of the observation window in image 240 of the first grain structure 1211, which had a characteristic size of about 50 nm or less, was about 19%, while the surface coverage of the observation window in image 240 of the second grain structure 1212, which had a characteristic size of at least about 50 nm, was about 21%.

[0172] 2D shows an SEM image 260 of the fourth sample and a further enlarged SEM image 265. As can be seen in image 260, some first grain structures 1211, which may tend to be concentrated around a first characteristic size, continue to be present, while some second grain structures 1212, which may tend to be concentrated around a second characteristic size, may be larger. t The plot 270 of counts can show two distinguishable peaks: a large peak for the first grain structure 1211 centered around about 20 nm, and a smaller peak for the second grain structure 1212 centered around about 85 nm. Analysis shows that the surface coverage of the observation window in the image 260 of the first grain structure 1211, which has a characteristic size of about 50 nm or less, was about 14%, while the surface coverage of the observation window in the image 260 of the second grain structure 1212, which has a characteristic size of at least about 50 nm, was about 34%.

[0173] 2E shows an SEM image 280 of the fifth sample and a further enlarged SEM image 285. As can be seen in image 280, some first grain structures 1211, which may tend to be concentrated around a first characteristic size, remain present, while some second grain structures 1212, which may tend to be concentrated around a second characteristic size, may be larger. In fact, the second grain structures 1212 may tend to dominate. t Plot 290 of the counts shows two distinguishable peaks: a large peak for the first grain structure 1211 centered around about 15 nm, and a smaller peak for the second grain structure 1212 centered around about 85 nm. Analysis shows that the surface coverage of the observation window in image 280 of the first grain structure 1211, which has a characteristic size of about 50 nm or less, was about 3%, while the surface coverage of the observation window in image 280 of the second grain structure 1212, which has a characteristic size of at least about 50 nm, was about 55%.

[0174] Without wishing to be limited to any particular theory, in some non-limiting examples, such multimodal behavior of at least one grain structure 121 may be achieved by introducing multiple nucleation sites for the grain material, including, but not limited to, doping, coating, and / or supplementing patterned material 1711 (FIG. 17) with another material that may act as a seed or heterogeneity that may act as such nucleation sites. In some non-limiting examples, the first grain structure 1211 of the first characteristic size may be formed in a grain structure-patterned coating 323 that is substantially free of such nucleation sites. p (FIG. 3), and it can be hypothesized that second grain structures 1212 of a second characteristic size may tend to form at the locations of such nucleation sites.

[0175] Those skilled in the art will appreciate that there may be other mechanisms by which such multimodal behavior may be generated.

[0176] Those skilled in the art will appreciate that, taking into account the non-deterministic nature of the deposition process, and in particular the presence of anomalies, including, but not limited to, defects and / or non-uniformities on the exposed layer surface 11 of the underlying material, including, but not limited to, step edges, chemical impurities, bonding sites, kinks, and / or contaminants thereon, and the resulting formation of grain structures 121, their coalescence non-uniformity as the deposition process continues, as well as the uncertainty in the size and / or location of the observation window and the inherent complexity and variability in the calculations and / or measurements of their characteristic size, length, width, diameter, height, size distribution, shape, surface coverage, configuration, deposition density, dispersity, composition, aggregation, etc., there can be considerable variability in the features and / or topology within the observation window.

[0177] In some non-limiting examples, the characteristic size, length, width, diameter, height, size distribution, shape, surface coverage, configuration, deposition density, dispersibility, and / or composition of a layer (or level) within a layer of device 100, lateral side portions 301 ( FIG. 3 ), 302 ( FIG. 3 ) of device 100, and / or grain structures 121 deposited therein or thereon can be controllably selected at least in part by contacting the grain material with a contact material, the properties of which can affect the formation of grain structures 121. Such contact materials include, but are not limited to, a seed material, a patterned material 1711, and a co-deposited dielectric material.

[0178] In some non-limiting examples, the contact material used can determine the manner in which the particulate material contacts it and the impact it has on the formation of the particulate structure 121. In some non-limiting examples, multiple different contact materials and associated mechanisms can be used.

[0179] In some non-limiting examples, the at least one grain structure 121 may be arranged in a pattern that may be defined by at least one region that is substantially free of the at least one grain structure 121.

[0180] In this disclosure, for simplicity of explanation, specific details of particulate materials, including but not limited to layer thickness profiles and / or edge profiles, have been omitted.

[0181] seed In some non-limiting examples, the location, size, height, weight, thickness, shape, profile, and / or spacing of the grain structures 121 may be specified, to a greater or lesser extent, by depositing seed material within the template layer at appropriate locations and / or appropriate densities and / or stages of deposition. In some non-limiting examples, such seed material can act as seeds 122 or inhomogeneities that act as nucleation sites such that the grain material tends to coalesce around each seed 122 to form the grain structures 121.

[0182] Thus, as shown in the dashed outline insert of Figure 1, the particulate material may be in physical contact with the seed material and may in fact completely surround and / or encapsulate the seed material.

[0183] In some non-limiting examples, the seed material may include a metal, including but not limited to Yb or Ag. In some non-limiting examples, the seed material may have high wetting properties for the particulate material deposited thereon and fused thereto.

[0184] In some non-limiting examples, the seeds 122 may be deposited in the template layer over the exposed layer surface 11 of the underlying layer 110 of the device 100 using an open-mask and / or mask-free deposition process of the seed material.

[0185] Co-deposition with dielectric materials Although not shown, in some non-limiting examples, the at least one grain structure 121 may be formed without the use of a seed 122, including, but not limited to, co-depositing a grain material with a co-deposited dielectric material.

[0186] Thus, the particulate material may be in physical contact with, and may actually be intermixed with, the co-deposited dielectric material.

[0187] In some non-limiting examples, the ratio of particulate material to co-deposited dielectric material can be within at least one of the following ranges: about 50:1 to 5:1, about 30:1 to 5:1, or about 20:1 to 10:1. In some non-limiting examples, the ratio can be at least one of about 50:1, 45:1, 40:1, 35:1, 30:1, 25:1, 20:1, 19:1, 15:1, 12.5:1, 10:1, 7.5:1, or 5:1.

[0188] In some non-limiting examples, the co-deposited dielectric material can have an initial sticking probability that can be less than one relative to the deposition of the co-deposited particulate material.

[0189] In some non-limiting examples, the ratio of particulate material to co-deposited dielectric material can vary depending on the initial sticking probability of the co-deposited dielectric material relative to the deposition of particulate material.

[0190] In some non-limiting examples, the co-deposited dielectric material can be an organic material. In some non-limiting examples, the co-deposited dielectric material can be a semiconductor. In some non-limiting examples, the co-deposited dielectric material can be an organic semiconductor.

[0191] In some non-limiting examples, co-depositing the particle material with the co-deposited dielectric material can facilitate the formation of at least one grain structure 121 in the absence of a template layer including seeds 122.

[0192] In some non-limiting examples, co-depositing a particle material with a co-deposited dielectric material can promote and / or increase absorption by at least one particle structure 121 of EM radiation generally, or in some non-limiting examples, in wavelength (sub)ranges of the EM spectrum (including, but not limited to, the visible spectrum), and / or sub-ranges and / or wavelengths thereof (corresponding to, but not limited to, particular colors).

[0193] Particle structure patterned coating Referring now to FIG. 3 , where a version 300 of device 100 is shown, in some non-limiting examples, at least one grain structure 121 may be formed by depositing at least one grain structure 121 using techniques including, but not limited to, mask-free and / or open-mask deposition processes. t For the purpose of depositing a particle structure patterned coating 323 p At least one grain structure 121 deposited on the exposed layer surface 11 of t may include:

[0194] In some non-limiting examples, the particle structure 121 t At least one of the particles is a patterned coating 323 p In some non-limiting examples, the grain structure 121 may be in physical contact with the exposed layer surface 11. t Substantially all of the grain structure patterned coating 323 p The exposed layer surface 11 may be in physical contact with the exposed layer surface 11.

[0195] In some non-limiting examples, at least one particle structure 121 t Particle structure patterned coating 323 p The metal layer may be deposited in a pattern over a lateral extent of .

[0196] In some non-limiting examples, at least one particle structure 121 t Particle structure patterned coating 323 pThe discontinuous layer 120 may be deposited on the exposed layer surface 11 of the substrate 10. In some non-limiting examples, the discontinuous layer 120 may be a grain structure patterned coating 323. p The lateral extent of the

[0197] In some non-limiting examples, the grain structure 121 of at least the central portion of the discontinuous layer 120 t may have at least one common characteristic selected from at least one of their size, length, width, diameter, height, size distribution, shape, surface coverage, composition, deposition density, degree of dispersion, material, degree of aggregation, or other characteristics.

[0198] In some non-limiting examples, the grain structure 121 beyond such a central portion of the discontinuous layer 120 may t may be due to the proximity of the deposited layer 1430, an increased presence of small openings, including but not limited to pinholes, crevices, and / or cracks, beyond such central portion, or the grain structure patterned coating 323 beyond such central portion. p The thickness of the film may be reduced by at least one factor that may differ from the common characteristics, including, but not limited to, considering edge effects.

[0199] In some non-limiting examples, such as those shown in FIG. 3, the particle structure patterned coating 323 p The deposition of the shadow mask 1715 (FIG. 17), which may be a fine metal mask (FMM) in some non-limiting examples, is performed by interposing the exposed layer surface 11 of the underlayer 110 and the grain structure patterned coating 323 thereon. p The first portion 301 of the lateral side of the device 300 can be limited by interposing a patterned material 1711 (FIG. 17) between the first portion 301 and the patterned material 1711. The patterned material 1711 can include a material selected from the group consisting of:

[0200] A particle structure patterned coating 323 on the first portion 301 p After selectively depositing the particulate material, in some non-limiting examples, the first portion 301 and the particle structure patterned coating 323 pand a second portion 302 substantially free of the grain structure patterned coating 323. p 3. forming a grain structure 121 in the first portion 301 using an open mask and / or a mask-free deposition process, including, but not limited to, coalescing around each seed 122 not covered by the t In some non-limiting examples, the second portion 302 may form any grain structure 121. t In some non-limiting examples, second portion 302 may include a portion of exposed layer surface 11 of the underlying layer of device 100 that is located beyond first portion 301.

[0201] Those skilled in the art will recognize that at least one particle structure 121 t Particle structure patterned coating 323 p The grain structure patterned coating 323 is deposited on the exposed layer surface 11 of the p It will be understood that the grain structure patterned coating 323 on the underlayer 110 may itself be considered to be the underlayer 110. However, for ease of explanation, the grain structure patterned coating 323 on the underlayer 110 may also be considered to be the grain structure patterned coating 323 on the underlayer 110. p prior deposition of at least one grain structure 121 thereon as described herein. t Considering that such a particle structure patterned coating 323 can facilitate the controllable deposition of p is not the underlayer 110, but rather at least One particle structure 121 t is considered to be an aid in the formation of

[0202] Particle Structure Patterned Coating 323 p can provide a surface with a relatively low initial sticking probability for the deposition of particulate material, which may be substantially lower than the initial sticking probability for the deposition of particulate material of the exposed layer surface 11 of the underlying layer 110 of the device 300.

[0203] Thus, the exposed layer surface 11 of the foundation layer 110 may be substantially devoid of a closed coating 1440 ( FIG. 14 ) of particulate material in either the first portion 301 or the second portion 302, while at least one grain structure 121 may be present on the exposed layer surface 11 of the foundation layer 110 in the first portion 301. t A, particle structure patterned coating 323 p This includes, but is not limited to, coalescing around a seed 122 that is not covered by

[0204] In this way, the grain structure patterned coating 323 p The grain structure 121 includes, but is not limited to, coalescing around each seed 122. t The particulate material may be selectively deposited, including but not limited to, using a shadow mask 1715, such that the particulate material can be deposited, including but not limited to, using an open mask and / or a mask-free deposition process, to form a

[0205] In some non-limiting examples, the particle structure patterned coating 323 p The grain-structure-patterned coating 323 may include a grain-structure-patterned material that exhibits a relatively low initial adhesion probability to the seed material and / or particle material. p In some instances, the surface of the t non-particle structure patterned coating 323 used for the purpose of inhibiting the deposition of a closed coating 1440 of particulate material, including applications discussed herein other than the formation of n and / or the patterned material 1711 in which they may be included, t As a result, the ion exchange rate can show an increased tendency to deposit as a

[0206] Without wishing to be limited to any particular theory, the formation of the closed coating 1440 of particulate material thereon is believed to be a function of the grain structure patterned coating 323.p Although the above may be substantially inhibited, in some non-limiting examples, the particle structure patterned coating 323 p When exposed to the deposition of particulate material, some vapor monomers of the particulate material eventually form at least one particle structure 121 of the particulate material thereon. t It can be assumed that the following can be formed:

[0207] Therefore, at least one such particle structure 121 t In some non-limiting examples, the particle structure patterned coating 323 p and upper layer 130 and may include a thin dispersed layer of particulate material intercalated substantially across its lateral extent.

[0208] In some non-limiting examples, the particle structure patterned coating 323 p and / or patterned material 1711, in some non-limiting examples, when deposited as a film and / or coated in some form, and particle structure patterned coating 323 within device 300. p In some non-limiting examples, when deposited as a film and / or coated in some form, and at least one grain structure 121 in device 300. t Under similar circumstances, the particulate material may have a first surface energy that may be less than or equal to the second surface energy of the particulate material.

[0209] In some non-limiting examples, the quotient of the second surface energy / first surface energy can be at least one of at least about 1, 5, 10, or 20.

[0210] In some non-limiting examples, at least one grain structure 121 deposited thereon t Particle structure patterned coating by 323 p The surface coverage of the area is the maximum threshold coverage It may be the following:

[0211] 4A to 4H show the particle structure patterned coating 323 p and at least one particle structure 121 in contact therewith. t 1 shows non-limiting examples of possible interactions between

[0212] Thus, as shown in Figures 4A-4H, the particulate material may be in physical contact with the patterned material 1711, including, but not limited to, being deposited thereon and / or being substantially surrounded by it, as shown in the various figures.

[0213] In FIG. 4A, which substantially reproduces the structure of FIG. 3, the particle material is formed as a particle structure patterned coating 323 p is deposited thereon. p may be in physical contact with

[0214] In FIG. 4B, the particle material is a particle structure patterned coating 323 p In some non-limiting examples, the at least one grain structure 121 may be substantially surrounded by a grain structure-patterned coating 323. p The thickness may be distributed throughout at least one of the lateral and longitudinal extents of the

[0215] In some non-limiting examples, the particle structure patterned coating 323 p At least one grain structure throughout 121 t The distribution of at least one particle structure 121 t Particle structure patterned coating 323 p The particle structure patterned coating 323 may tend to penetrate and / or settle into the particle structure patterned coating 323 when a particle material is deposited thereon. p This may be achieved by depositing the material and / or keeping it in a relatively viscous state.

[0216] In some non-limiting examples, the particle structure patterned coating 323 pThe viscous state can be achieved in several ways, including but not limited to, conditions during deposition of patterned material 1711 including but not limited to time, temperature, and / or pressure of the deposition environment of patterned material 1711, properties of the patterned material including but not limited to composition, melting point, freezing temperature, sublimation temperature, viscosity, or surface energy of patterned material 1711, conditions during deposition of the particulate material including but not limited to time, temperature, and / or pressure of the deposition environment of the particulate material, composition of the particulate material, or properties of the particulate material including but not limited to melting point, freezing temperature, sublimation temperature, viscosity, or surface energy.

[0217] In some non-limiting examples, the particle structure patterned coating 323 p At least one grain structure throughout 121 t The distribution of the patterned structure-patterned coating 323 may be achieved by the presence of small openings therein, including, but not limited to, pinholes, crevices, and / or cracks. Those skilled in the art will appreciate that due to inherent variability in the deposition process, and in some non-limiting examples, the presence of impurities in the particulate material of the patterned material 1711 and / or the exposed layer surface 11, it is possible to form the patterned structure-patterned coating 323 using a variety of techniques and processes, including, but not limited to, those described herein. p It will be appreciated that such openings may be formed during the deposition of the thin film.

[0218] In FIG. 4C, at least one grain structure 121 t The particle material, which may include a particle structure patterned coating 323, is effectively disposed on the exposed layer surface 11 of the underlayer 110. p can settle to the bottom.

[0219] In some non-limiting examples, the particle structure patterned coating 323 p At least one grain structure 121 at the bottom of t The distribution of at least one particle structure 121 t Particle structure patterned coating 323p The grain structure patterned coating 323 may tend to settle to the bottom when a grain material is deposited thereon. p Deposit and 4C may be less viscous than the patterning material 1711 used in FIG. 4B, and the viscosity of the patterning material 1711 may be less than the viscosity of the patterning material 1711 used in FIG. 4B, and the viscosity of the patterning material 1711 may be less than the viscosity of the patterning material 1711 used in FIG. 4C, and the viscosity of the patterning material 1711 may be less than the viscosity of ... t Particle structure patterned coating 323 p allowing it to settle further within the cavity and eventually descend to the bottom.

[0220] 4D-4F, at least one particle structure 121 t The shape of the at least one particle structure 121 in FIG. t 1 and 2. The shape of the slit is shown as being elongated in the longitudinal direction.

[0221] In some non-limiting examples, at least one particle structure 121 t The longitudinally elongated shape of the patterned material 1711 may vary depending on the conditions during deposition of the patterned material 1711, including but not limited to the time, temperature, and / or pressure of the deposition environment of the patterned material 1711, the properties of the patterned material 1711, including but not limited to the composition of the patterned material 1711, the melting point, freezing temperature, sublimation temperature, viscosity, or surface energy, the conditions during deposition of the particulate material, including but not limited to the time, temperature, and / or pressure of the deposition environment of the particulate material, the composition of the particulate material, or the properties of such longitudinally elongated particle structures 121 t This may be achieved in several ways, including but not limited to, properties of the particulate material, including but not limited to, melting point, freezing temperature, sublimation temperature, viscosity, or surface energy, which may tend to facilitate deposition of the particulate material.

[0222] In FIG. 4D, longitudinally elongated grain structures 121 t Particle structure patterned coating 323 p In contrast, in FIG. 4E, longitudinally elongated grain structures 121t At least one of the particles is a patterned coating 323 p 4F, longitudinally elongated grain structures 121 may be shown protruding at least partially beyond the exposed layer surface 11. t At least one of the protruding grain structures 121 t Particle structure patterned coating 323 p to the extent that the grain structure patterned coating 323 can begin to be considered substantially deposited on the exposed layer surface 11 of p 1. The exposed layer surface 11 may be shown to protrude substantially beyond the exposed layer surface 11.

[0223] Thus, as shown in FIG. 4G, at least one particle structure 121 t Particle structure patterned coating 323 p and at least one grain structure 121 t Particle structure patterned coating 323 p There may be scenarios where the particles may penetrate and / or settle within the particle structure patterned coating 323. p At least one particle structure 121 shown in t is shown as having the shape shown in FIG. 4B, those skilled in the art will recognize that such a grain structure 121, although not shown, t It will be appreciated that the may have a longitudinally elongated shape as shown in Figures 4D-4F.

[0224] Additionally, FIG. 4H shows at least one grain structure 121 t Particle structure patterned coating 323 p and at least one grain structure 121 t Particle structure patterned coating 323 p and at least one particle structure 121 t Particle structure patterned coating 323 p This shows a scenario in which the water may settle to the bottom.

[0225] 5 is a simplified, partially cut-away view in plan of first portion 301 of device 300. Some portions of device 300 have been omitted from FIG. 4 for ease of explanation, although it will be understood that various features described with respect thereto may be combined with features of the non-limiting examples provided herein.

[0226] The figures may show a pair of horizontal axes, identified as the X-axis and the Y-axis, respectively, which may in some non-limiting examples be substantially transverse to one another. Both may define the lateral sides of device 300.

[0227] In FIG. 5, the upper layer 130 includes at least one grain structure 121 t At least one grain structure 121 extends substantially over t 323 a particle structure patterned coating having a p Any portion of the exposed layer surface 11 may have at least one grain structure 121, as a non-limiting example. t The overlying layer 130 may be formed by such a grain structure patterned coating 323 as long as it is substantially free of grain material, including interstices between the grain structure patterned coating 323. p The exposed layer surface 11 may extend substantially across and be disposed on it.

[0228] In some non-limiting examples, the particle structure patterned coating 323 p can include multiple materials, at least one of which is patterned material 1711, including, but not limited to, patterned material 1711 that exhibits such a relatively low initial adhesion probability to particle material and / or seed material as described above.

[0229] In some non-limiting examples, a first material of the plurality of materials may be a patterned material 1711 having a first initial sticking probability for deposition of particle material and / or seed material, and a second material of the plurality of materials may be a patterned material 1711 having a second initial sticking probability for deposition of particle material and / or seed material, the second initial sticking probability exceeding the first initial sticking probability.

[0230] In some non-limiting examples, the first initial sticking probability and the second initial sticking probability can be measured using substantially the same conditions and parameters.

[0231] In some non-limiting examples, a first material of the plurality of materials may be doped, coated, and / or supplemented with a second material of the plurality of materials, such that the second material may act as a seed or heterogeneity to act as a nucleation site for the particle material and / or seed material.

[0232] In some non-limiting examples, the second material of the plurality of materials may include NPC 2020. In some non-limiting examples, the second material of the plurality of materials may include an organic material, including but not limited to a polycyclic aromatic compound, and / or a material containing a non-metallic element, including but not limited to O, S, nitrogen (N), or C, whose presence may otherwise be considered to be a contaminant in the source material, the equipment used for deposition, and / or the vacuum chamber environment. In some non-limiting examples, the second material of the plurality of materials may be deposited at a layer thickness that is a fraction of a monolayer to avoid the formation of a closed coating 1440 thereof. Rather, monomers of such a material may tend to space apart laterally to form separate nucleation sites for particle material and / or seed material.

[0233] A series of samples were fabricated to produce particle structure patterned coatings 323 comprising a mixture of first patterned material 17111 and second patterned material 17112. pThe suitability of at least one grain structure 121 formed by the method was evaluated. In all samples, the first patterned material 17111 was a nucleation-inhibiting coating (NIC) having a substantially low initial adhesion probability for the deposition of Ag as a grain material. Three example materials were evaluated as the second patterned material 17112, i.e., ETL2137 (FIG. 21) material, Liq, which tends to have a relatively high initial adhesion probability for the deposition of Ag as a grain material and may be suitable in some non-limiting examples as NPC2020, and LiF.

[0234] For the ETL2137 material, the first patterned material 17111 and the ETL2137 material were co-deposited in various ratios onto an indium tin oxide (ITO) substrate 10 to an average layer thickness of 20 nm, after which the exposed layer surface 11 was evaporatively coated with Ag to a nominal layer thickness of 15 nm. Some samples were prepared by exposure to a gas flux of 1832.

[0235] Six samples were prepared with volume percent ratios of ETL2137 material to first patterned material 17111 of 1:99 (ETL Sample A), 2:98 (ETL Sample B), 5:95 (ETL Sample C), 10:90 (ETL Sample D), 20:80 (ETL Sample E), and 40:60 (ETL Sample F), respectively. Additionally, two comparative samples were prepared with volume percent ratios of ETL2137 material to first patterned material 17111 of 0:100 (Comparative Sample 1) and 100:0 (Comparative Sample 2), respectively.

[0236] ETL sample B showed a total surface coverage of 15.156%, a mean characteristic size of 13.6292 nm, a dispersity of 2.0462, a number average particle diameter of 14.5399 nm, and a size average particle diameter of 20.7989 nm.

[0237] ETL sample C showed a total surface coverage of 22.083%, a mean characteristic size of 16.6985 nm, a dispersity of 1.6813, a number average particle diameter of 17.8372 nm, and a size average particle diameter of 23.1283 nm.

[0238] ETL sample D showed a total surface coverage of 27.0626%, a mean characteristic size of 19.4518 nm, a dispersity of 1.5521, a number average particle diameter of 20.7487 nm, and a size average particle diameter of 25.8493 nm.

[0239] ETL sample E showed a total surface coverage of 35.5376%, a mean characteristic size of 24.2092 nm, a dispersity of 1.6311, a number average particle diameter of 25.858 nm, and a size average particle diameter of 32.9858 nm.

[0240] 6A to 6E are SEM micrographs of Comparative Sample 1, ETL Sample B, ETL Sample C, ETL Sample D, and ETL Sample E, respectively.

[0241] FIG. 6F is a histogram plotting the histogram distribution of grain structure 121 as a function of characteristic grain size for ETL sample B 605, ETL sample C 610, ETL sample D 615, and ETL sample E 620, with curve fits to histograms 606, 611, 616, and 621, respectively.

[0242] Table 1 below shows the percent reduction in transmittance measured for various samples at various wavelengths.

[0243] In this disclosure, references to percent transmittance reduction of a layered sample refer to the value after subtracting the transmittance of a layer prior to deposition of a metal (including, but not limited to, Ag) in a sample including any substrate 10. Those skilled in the art will understand that, in some non-limiting examples, simplifying assumptions can be made for convenience at the expense of some computational rigor. As a non-limiting example, one simplifying assumption may be that the transmittance of glass over a wide range of wavelengths is substantially 0.92. As a non-limiting example, one simplifying assumption may be that the transmittance of a layer between the substrate 10 and the metal is negligible. As a non-limiting example, the substrate 10 may be assumed to be glass. Thus, in some non-limiting examples, subtracting the transmittance of a layer prior to deposition of a metal (including, but not limited to, Ag) in a sample including any substrate 10 can be calculated by dividing the measured transmittance value by 0.92.

[0244] [Table 1]

[0245] As can be seen, there was minimal reduction in transmittance across most wavelengths when the concentration of ETL as second patterning material 17112 was relatively low. However, when the ETL concentration exceeded about 5% by volume, a substantial reduction (>10%) was observed at wavelengths of 450 nm and 550 nm in the visible spectrum, without a significant reduction in transmittance at wavelengths of 700 nm in the IR spectrum and 850 nm in the NIR spectrum.

[0246] For Liq, several samples were prepared by co-depositing various ratios of the first patterning material 17111 and Liq onto an ITO substrate 10 to an average layer thickness of 20 nm, and then exposing the exposed layer surface 11 to an Ag vapor flux 1832 to a reference layer thickness of 15 nm.

[0247] Four samples were prepared with volume percent ratios of Liq to first patterning material 17111 of 2:98 (Liq Sample A), 5:95 (Liq Sample B), 10:90 (Liq Sample C), and 20:80 (Liq Sample D), respectively.

[0248] Liq sample A showed a total surface coverage of 11.1117%, a mean characteristic size of 13.2735 nm, a dispersity of 1.651, a number average particle size of 13.9619 nm, and a size average particle size of 17.9398 nm.

[0249] Liq sample B showed a total surface coverage of 17.2616%, a mean characteristic size of 15.2667 nm, a dispersity of 1.7914, a number average particle size of 16.3933 nm, and a size average particle size of 21.941 nm.

[0250] Liq sample C showed a total surface coverage of 32.2093%, a mean characteristic size of 23.6209 nm, a dispersity of 1.6428, a number average particle size of 25.3038 nm, and a size average particle size of 32.4322 nm.

[0251] 6G to 6J are SEM micrographs of Liq Sample A, Liq Sample B, Liq Sample C, and Liq Sample D, respectively.

[0252] FIG. 6K is a histogram plotting the histogram distribution of particle structure 121 as a function of characteristic particle size for Liq Sample B 625, Liq Sample A 630, and Liq Sample C 635, with curve fits to histograms 626, 631, 636, respectively.

[0253] Table 2 below shows the measured percent reduction in transmittance for various samples at various wavelengths.

[0254] [Table 2]

[0255] As can be seen, there was minimal reduction in transmittance across most wavelengths when the concentration of Liq as second patterning material 17112 was relatively low. However, when the Liq concentration exceeded about 5% by volume, a substantial reduction (>10%) was observed at wavelengths of 450 nm and 550 nm in the visible light spectrum, without a significant reduction in transmittance at wavelengths of 700 nm in the IR spectrum and 850 nm and 1,000 nm in the NIR spectrum.

[0256] For LiF, several samples were prepared by first depositing the ETL material onto the ITO substrate 10 to an average layer thickness of 20 nm, then co-depositing the first patterning material 17111 and LiF in various ratios onto the exposed layer surface 11 of the ETL material to an average layer thickness of 20 nm, and then exposing the exposed layer surface 11 to an Ag vapor flux 1832 to a reference layer thickness of 15 nm.

[0257] Four samples were prepared with volume percentage ratios of LiF to first patterning material 17111 of 2:98 (LiF Sample A), 5:95 (LiF Sample B), 10:90 (LiF Sample C), and 20:80 (LiF Sample D), respectively.

[0258] 6L to 6O are SEM micrographs of LiF sample A, LiF sample B, LiF sample C, and LiF sample D, respectively.

[0259] FIG. 6P shows histograms plotting the histogram distribution of grain structure 121 as a function of characteristic grain size for LiF Sample A 640, LiF Sample B 645, and LiF Sample D 650, and respective curve fits to histograms 641, 646, and 651.

[0260] Table 3 below shows the measured percent reduction in transmittance for various samples at various wavelengths.

[0261] [Table 3]

[0262] As can be seen, there was minimal reduction in transmittance across most wavelengths when the concentration of LiF as second patterning material 17112 was relatively low. However, when the LiF concentration exceeded about 10% by volume, a significant reduction (8%) was observed at a wavelength of 450 nm in the visible spectrum, without significant reduction in transmittance at wavelengths of 700 nm in the IR spectrum and 850 and 1,000 nm in the NIR spectrum.

[0263] Additionally, substantially no reduction in transmittance at wavelengths above 700 nm was observed for concentrations of LiF up to 20% by volume.

[0264] Table 4 below shows the measured refractive indices of the materials used in the above samples at various wavelengths.

[0265] [Table 4]

[0266] For layers or coatings formed by co-depositing two or more materials, the refractive index of such layers or coatings can be estimated using, as a non-limiting example, the Lever rule, which will be understood to calculate, for each material comprising such layer or coating, the product of the material's concentration and the refractive index of the material, and then calculate the sum of all products calculated for the materials comprising such layer or coating.

[0267] Optical effects of grain-structured layers Without wishing to be bound by any particular theory, it is somewhat surprising that the grain structure patterned coating 323 pIt has been found that the presence of a thin dispersed layer of at least one grain structure 121, including but not limited to at least one metallic grain structure 121, on the exposed layer surface 11 of the device 300 can exhibit one or more changing properties and associated changing behavior, including but not limited to the optical effects and properties of the device 300, as described herein.

[0268] In some non-limiting examples, the presence of such a discontinuous layer 120 of particulate material, including but not limited to at least one grain structure 121, may contribute to enhanced extraction of EM radiation, improved device performance, stability, reliability, and / or lifetime.

[0269] In some non-limiting examples, such effects and properties can be controlled to some extent by judicious selection of at least one of the characteristic size, length, width, diameter, height, size distribution, shape, surface coverage, configuration, deposition density, degree of dispersion, and / or composition of the particle structures 121.

[0270] In some non-limiting examples, at least one such particle structure 121 t The formation of at least one of the characteristic size, length, width, diameter, height, size distribution, shape, surface coverage, configuration, deposition density, dispersity, and / or composition of the patterned material 1711, in some non-limiting examples, can be at least one characteristic of the particle structure patterned coating 323. p Average thickness of grain structure patterned coating 323 p Introduction of heterogeneity into the coating and / or grain structure patterning coating 323 p The patterning of material 1711 may be controlled by judicious selection of at least one of the deposition environment, including but not limited to temperature, pressure, duration, deposition rate, and / or deposition process.

[0271] In some non-limiting examples, at least one such particle structure 121 tAt least one of the characteristics size, length, width, diameter, height, size distribution, shape, surface coverage, configuration, deposition density, dispersibility, and / or composition of the particle material can be determined, in some non-limiting examples, by at least one characteristic of the particle material, particle structure patterned coating 323. p The extent to which the layer 122 may be exposed to deposition of particulate material (which may, in some non-limiting examples, be specified in terms of the thickness of the corresponding discontinuous layer 120) may be controlled by judicious selection of at least one of the deposition environment, including, but not limited to, the temperature, pressure, duration, deposition rate, and / or deposition method of the particulate material.

[0272] In some non-limiting examples, (a portion of) at least one particle structure 121 having a surface coverage that may be substantially below the maximum threshold coverage may result in the appearance of different optical properties that may be imparted to EM radiation passing through a portion of at least one particle structure 121 having a surface coverage that substantially exceeds the maximum threshold coverage, regardless of whether it is fully transmitted through device 100 and / or emitted thereby, by such portion of at least one particle structure 121.

[0273] In some non-limiting examples, at least one dimension, including but not limited to a characteristic dimension, of the at least one particle structure 121 may correspond to a wavelength range in which the absorption spectrum of the at least one particle structure 121 does not substantially overlap with the wavelength range of the EM spectrum of the EM radiation emitted and / or at least partially transmitted by the device 100.

[0274] Those skilled in the art will appreciate that the at least one grain structure 121 can absorb EM radiation incident thereon beyond the layered semiconductor device 100, thus reducing reflection, although in some non-limiting examples, the at least one grain structure 121 can absorb EM radiation incident thereon that is emitted by the device 100.

[0275] In some non-limiting examples, the presence of at least one grain structure 121 within the layered device 100 on and / or adjacent to the exposed layer surface 11 of the patterned coating 323 and / or in some non-limiting examples, adjacent to the interface between such patterned coating 323 and the overlying layer 130 can impart optical effects to EM radiation, including but not limited to photons emitted by and / or transmitted through the device.

[0276] In some non-limiting examples, an optical effect can be described in terms of its effect on the transmission and / or absorption wavelength spectrum, including the wavelength range and / or its peak intensity.

[0277] Furthermore, while the presented model may suggest specific effects on the transmission and / or absorption of EM radiation passing through such at least one particle structure 121, in some non-limiting examples, such effects may reflect local effects that may not be reflected on a broad observable basis.

[0278] The above also assumes, as a simplifying assumption, that the NPs modeling each particle structure 121 may have a perfect spherical shape. Typically, the particle structure 121 in (the observation window used for) at least one particle structure 121 t The shape of the grain structure 121 can depend greatly on the deposition process. t The shape of can have a significant effect on the SP excitation exhibited thereby, including but not limited to, the width, wavelength range, and / or intensity of the resonance band and concomitantly its absorption band.

[0279] In some non-limiting examples, the material surrounding at least one grain structure 121 may be either underlying or (grain structure 121 tmay be deposited on its exposed layer surface 11) or subsequently placed on the exposed layer surface 11 of the at least one grain structure 121, may affect the optical effects produced by the emission and / or transmission of EM radiation and / or EM signal 1061 through the at least one grain structure 121.

[0280] In some non-limiting examples, the particle structure patterned coating 323 may be composed of a material having a low refractive index. p on and / or in physical contact with and / or in close proximity to the exposed layer surface 11 of the grain structure 121 t and disposing at least one particle structure 121 comprising: It can be assumed that can shift the absorption spectrum of at least one particle structure 121.

[0281] In some non-limiting examples, the change and / or shift in absorption may be centered in an absorption spectrum that is a (sub)range of the EM spectrum, including but not limited to the visible spectrum and / or subranges thereof.

[0282] At least one grain structure 121 is formed by a grain structure patterned coating 323 p The device 300 may be provided with a particle structure patterned coating 323 thereon and / or in physical contact with and / or adjacent thereto. p The presence of the at least one particle structure 121 may be configured such that the absorption spectrum of the at least one particle structure 121 may be adjusted and / or modified, including, but not limited to, such absorption spectrum may substantially overlap and / or not overlap with at least one wavelength (sub)range of the EM spectrum (including, but not limited to, the visible spectrum, the UV spectrum, and / or the IR spectrum).

[0283] In some non-limiting examples, one measure of the surface coverage of a certain amount of conductive material on a surface can be the (EM radiation) transmittance, since conductive materials, including but not limited to metals, including but not limited to Ag, Mg, or Yb, in some non-limiting examples, attenuate and / or absorb EM radiation.

[0284] In some non-limiting examples, at least one grain structure 121 may be provided to enhance transmission of EM signals 1061 passing through the layers of the device 100 at a non-zero angle. t The resonance imparted by the particle structure 121 t The properties of the nanoparticles may be tailored by judicious selection of at least one of size, size distribution, shape, surface coverage, composition, dispersibility, and / or material.

[0285] In some non-limiting examples, the resonance can be tuned by varying the deposition thickness of the particulate material.

[0286] In some non-limiting examples, the resonance may be achieved by a particle structure patterned coating 323 p This can be adjusted by changing the average film thickness of the film.

[0287] In some non-limiting examples, the resonance can be tuned by varying the thickness of the overlying layer 130. In some non-limiting examples, the thickness of the overlying layer 130 can be adjusted by varying the thickness of the deposited grain structure 121. t The thickness of the overlying layer 130 can be in the range of 0 nm (corresponding to the absence of the overlying layer 130) to a value exceeding the characteristic size of the overlying layer 130.

[0288] In some non-limiting examples, the resonance can be tuned by selecting and / or modifying the material deposited as the overlying layer 130 to have a specific refractive index and / or specific extinction coefficient. As a non-limiting example, a typical organic CPL1215 material may have a refractive index in the range of about 1.7 to 2.0, while SiON, a material typically used as a TFE material, may have a refractive index in the range of about 1.7 to 2.0. x may have a refractive index that may exceed about 2.4.x may have a high extinction coefficient that may affect the desired resonance characteristics.

[0289] In some non-limiting examples, the resonance may be t The dielectric constant of the dielectric film can be adjusted by changing the composition of the metal in the particle material.

[0290] In some non-limiting examples, the resonance may be tuned by doping the patterned material 1711 with organic materials having different compositions.

[0291] In some non-limiting examples, the resonance may be tuned by selecting and / or modifying the patterned material 1711 to have a particular refractive index and / or a particular extraction coefficient.

[0292] Those skilled in the art will appreciate that additional parameters and / or values ​​and / or ranges thereof may become apparent that are suitable for tuning the resonance provided by at least one particle structure 121 to enable transmission of EM signal 1061 passing through the layers of device 100 at a non-zero angle and / or to enhance absorption of EM radiation incident on device 100, which may be visible light, as a non-limiting example.

[0293] Those skilled in the art will understand that while particular values ​​and / or ranges of these parameters may be suitable for tuning the resonance imparted by at least one particle structure 121 to enhance the transmission of an EM signal 1061 passing at a non-zero angle relative to the layers of device 100, other values ​​and / or ranges of such parameters may be suitable for other purposes beyond enhancing the transmission of EM signal 1061, including increasing the performance, stability, reliability, and / or lifetime of device 100, and in some non-limiting examples, to ensure proper deposition of second electrode 740 (FIG. 7A) within second portion 302 within emission region 810 of an optoelectronic version of device 100, thereby facilitating the emission of EM radiation.

[0294] Additionally, one of ordinary skill in the art will appreciate that there may be additional parameters and / or values ​​and / or ranges that may be suitable for such other purposes.

[0295] In some non-limiting examples, the use of at least one grain structure 121 as part of the layered semiconductor device 100 can reduce the reliance on polarizers therein.

[0296] Those skilled in the art will appreciate that although a simplified model of the optical effects is presented herein, other models and / or explanations may be applicable.

[0297] In some non-limiting examples, the presence of at least one grain structure 121 can reduce and / or mitigate crystallization of adjacently disposed thin film layers and / or coatings on the longitudinal sides, including but not limited to, patterned coating 323 and / or overlying layer 130, thereby stabilizing the properties of the adjacently disposed thin film and, in some non-limiting examples, reducing scattering. In some non-limiting examples, such thin film can be and / or may include at least one layer of outcoupling and / or encapsulating coating 2350 (FIG. 25C) of device 100, including but not limited to, cap layer (CPL 1215).

[0298] In some non-limiting examples, the presence of such at least one particle structure 121 can provide enhanced absorption in at least a portion of the UV spectrum. In some non-limiting examples, controlling the properties of such particle structures 121, including, but not limited to, at least one of the characteristic size, length, width, diameter, height, size distribution, shape, surface coverage, configuration, deposition density, dispersity, composition, particle material, and / or refractive index of the particle structures 121, can facilitate control of the absorbance, wavelength range, and peak wavelength of the absorption spectrum, including the UV spectrum. Enhanced absorption of EM radiation in at least a portion of the UV spectrum can be advantageous, for example, to improve device performance, stability, reliability, and / or lifetime.

[0299] In some non-limiting examples, an optical effect can be described in terms of its effect on the transmission and / or absorption wavelength spectrum, including the wavelength range and / or its peak intensity.

[0300] Furthermore, while the presented model may suggest specific effects on the transmission and / or absorption of EM radiation passing through such at least one particle structure 121, in some non-limiting examples, such effects may reflect local effects that may not be reflected on a broad observable basis.

[0301] It has also been reported that the absorption spectrum of certain metal NPs can be shifted to a lower wavelength (sub)range (blue shift) by placing them near a medium with a relatively low refractive index.

[0302] Therefore, in some non-limiting examples, it may be further assumed that by disposing the particle material as a discontinuous layer 120 of at least one particle structure 121 on the exposed layer surface 11 of the underlayer 110 such that the at least one particle structure 121 is in physical contact with the underlayer 110, the absorption spectrum of the particle material, including but not limited to a blue shift, may be advantageously shifted so that it does not substantially overlap with the wavelength range of the EM spectrum of the EM radiation emitted and / or at least partially transmitted by the device 100.

[0303] In some non-limiting examples, the peak absorption wavelength of the at least one particle structure 121 may be less than the peak wavelength of the EM radiation emitted and / or at least partially transmitted by the device 100. By way of non-limiting example, the particle material may exhibit peak absorption at a wavelength (range) that is at least one of about 470 nm, 460 nm, 455 nm, 450 nm, 445 nm, 440 nm, 430 nm, 420 nm, or 400 nm or less.

[0304] Now, somewhat surprisingly, providing a particulate material, including but not limited to, in the form of at least one grain structure 121, including but not limited to, composed of a metal, can further affect the absorption and / or transmittance of EM radiation passing through device 100, which is within at least one wavelength (sub) range of the EM spectrum, including but not limited to, the visible spectrum and / or sub-ranges thereof, in a first direction from at least one grain structure 121 in a first direction and / or passing through the at least one grain structure.

[0305] In some non-limiting examples, absorption may be reduced and / or transmittance may be enhanced in at least one wavelength (sub)range of the EM spectrum, including but not limited to the visible spectrum and / or subranges thereof.

[0306] In some non-limiting examples, the absorption can be centered in an absorption spectrum that is a wavelength (sub)range of the EM spectrum, including but not limited to the visible spectrum and / or subranges thereof.

[0307] In some non-limiting examples, the absorption spectrum may be blue-shifted and / or shifted to higher wavelength (sub) ranges (red-shifted), including but not limited to wavelength (sub) ranges of the EM spectrum including the visible spectrum, and / or sub-ranges thereof, and / or wavelength (sub) ranges of the EM spectrum at least partially beyond the visible spectrum.

[0308] Those skilled in the art will appreciate that in some non-limiting examples, multiple layers of particle structures 121 may be disposed one above the other, whether or not separated by additional layers of device 100, including, but not limited to, having various lateral profiles, different properties, and providing different optical responses. The optical response of the layers and / or portions 301, 302 can be tailored according to one or more criteria.

[0309] Absorption around the emission region In some non-limiting examples, the layered semiconductor device 100 may be an optoelectronic device 700, such as an OLED, that includes at least one emissive region 810 (FIG. 8A). a (FIG. 7A). In some non-limiting examples, the emission region 810 may correspond to at least one semiconductor layer 730 (FIG. 7A) disposed between a first electrode 720 (FIG. 7A), which may be an anode in some non-limiting examples, and a second electrode 740, which may be a cathode in some non-limiting examples. The anode and cathode are electrically coupled to a power source 2105 (FIG. 21) and may generate holes and electrons, respectively, that move toward each other through the at least one semiconductor layer 730. When pairs of holes and electrons combine, EM radiation in the form of photons may be emitted.

[0310] In some non-limiting examples, in at least a portion of the emission region 810, at least one semiconductor layer 730 can be deposited on an exposed layer surface 11 of the device 700, which in some non-limiting examples comprises a first electrode 720.

[0311] In some non-limiting examples, exposed layer surface 11 of device 700, which in some non-limiting examples can include at least one semiconductor layer 730, can be exposed to a vaporized flux 1712 of patterning material 1711 ( FIG. 17 ), including but not limited to, by using a shadow mask 1715, to form patterned coating 323 on first portion 301. Whether or not shadow mask 1715 is employed, patterned coating 323 can be substantially limited on its lateral sides to signal transparent region 820.

[0312] In some non-limiting examples, the exposed layer surface 11 of the device 100 may be exposed to a vapor flux 1832 of a deposition material 1831, which in some non-limiting examples may be and / or may include a material similar to the particulate material, including, but not limited to, open-mask and / or mask-free deposition processes.

[0313] In some non-limiting examples, exposed layer surface 11 of face 1001 within a lateral side of at least one signal transparent region 820 may include patterned coating 323. Thus, within a lateral side of at least one signal transparent region 820, vapor flux 1832 of deposition material 1831, which in some non-limiting examples may be similar to and / or may include similar material to the particle material incident on exposed layer surface 11, forms at least one grain structure 121 on exposed layer surface 11 of patterned coating 323. t In some non-limiting examples, the surface coverage of the at least one particle structure 121 may be less than or equal to at least one of about 70%, 60%, 50%, 40%, 30%, 25%, 20%, 15%, or 10%.

[0314] At the same time, because the patterned coating 323 is substantially limited at its lateral sides to the non-emitting regions 1220, in some non-limiting examples, the exposed layer surface 11 of the face 1001 within the lateral side 2210 of the emitting region 810 can comprise at least one semiconductor layer 730. Thus, within the second portion 302 of the lateral side 2210 of the at least one emitting region 810, the vapor flux 1832 of the deposition material 1831 incident on the exposed layer surface 11 can form a closed coating 1440 of the deposition material 1831 as the second electrode 740.

[0315] Thus, in some non-limiting examples, the patterned coating 323 may include a dual Purpose: to provide a base for depositing at least one grain structure 121 on the first portion 301. p and a non-grain-structured patterned coating 323 that limits the lateral extent of deposition of the deposition material 1831 to the second portion 302 as the second electrode 740 without using a shadow mask 1715 during deposition of the deposition material 1831. n It can function as.

[0316] In some non-limiting examples, the closed coating 1440 of the deposited material 1831 can have an average thickness of at least about one of 5 nm, 6 nm, or 8 nm. In some non-limiting examples, the deposited material 1831 can include MgAg.

[0317] In some non-limiting examples, at least one grain structure 121 may be deposited on and / or above the exposed layer surface 11 of the second electrode 740 .

[0318] In some non-limiting examples, the lateral sides of exposed layer surface 11 of device 700 may include first portion 301 and second portion 302 .

[0319] In some non-limiting examples, at least one particle structure 121 may be omitted over the first portion 301 or may not extend thereover, rather may extend only over the second portion 302. In some non-limiting examples, as shown as a non-limiting example of FIG. 7A, the second portion 302 may correspond, to some degree, to the lateral side 2220 (FIG. 25A) of at least one non-emission region 1220 (FIG. 22) of version 700 of device 100 a and the seed 122 may be deposited prior to the deposition of the non-particle structure patterning coating 323 n of FIG. 22.

[0320] Such non-limiting configurations may be suitable to enable and / or maximize the transmittance of the EM radiation emitted from at least one emission region 810 while reducing the reflection of external EM radiation incident on the exposed layer surface 11 of device 100

[0321] Thus, in such a scenario where the non-particle structure patterning coating 323 n can be deposited, rather than for the purpose of depositing at least one particle structure 121, the patterning material 1711 that may include such non-particle structure patterning coating 323 n may not exhibit a relatively low initial adhesion probability with respect to the particle material and / or the seed material, as described above.

[0322] One skilled in the art will understand that in some non-limiting examples, at least one particle structure 121 may be omitted from regions of device 700 other than and / or in addition to the emission region 810 of device 700, and that the second portion 302 may, in some examples, correspond to and / or include such other regions.

[0323] In some non-limiting examples as shown in FIG. 7A, the non-particle structure patterning coating 323 nIf present, the seed 122 may be deposited on the exposed layer surface 11 after depositing the seed 122 in the template layer, such that the seed 122 may be deposited over both the first portion 301 and the second portion 302, forming a non-grain-structured patterned coating 323. n may cover the seeds 122 deposited over the first portion 301.

[0324] In some non-limiting examples, the non-particle structure patterned coating 323 n can provide a surface with a relatively low initial sticking probability for deposition of seed material as well as particle material. b In such an example, as shown in FIG. 3, a non-grain structure patterned coating 323 n is the deposition of seed material It may be deposited before rather than after.

[0325] a non-particle structure patterned coating 323 over the first portion 301; n In some non-limiting examples, open mask and / or mask-free deposition processes may be used to selectively deposit the device 700. b A conductive particle material may be deposited on top of, but remain substantially only within, the second portion 302, which is referred to as the non-particle structure patterned coating 323. n 323, including but not limited to, coalescing around each seed 122 that is not covered by a patterned coating 323, and / or has grain structures 121 therein. t can be formed.

[0326] a non-particle structure patterned coating 323 over the first portion 301; n After selectively depositing the seed material, the device 700 may be formed using, in some non-limiting examples, open mask and / or mask-free deposition processes. bThe seed 122 may be deposited in the template layer over the exposed layer surface 11 of the second portion 302, but the seed 122 may remain substantially only in the second portion 302, which is the non-grain-structured patterned coating 323. n may be substantially devoid of

[0327] Additionally, the particulate material may be deposited over the exposed layer surface 11 of the device 700 using, in some non-limiting examples, open-mask and / or mask-free deposition processes, but the particulate material may remain substantially only within the second portion 302, which may be referred to as the non-particle structure-patterned coating 323. n particles 121, including but not limited to, substantially free of and / or coalesced around each seed 122. t can be formed therein.

[0328] Non-particle structure patterned coating 323 n In the first portion 301, the device 700 in the second portion 302 b This can provide a surface with a relatively low initial adhesion probability for deposition of particulate material and / or seed material, if any, which can be substantially lower than the initial adhesion probability for deposition of particulate material and / or seed material, if any, of the exposed layer surface 11 of the underlying layer.

[0329] Thus, the first portion 301 forms a grain structure 121, including but not limited to, coalescing around the seed 122. t The second portion 302 may be substantially devoid of seeds 122 and / or a closed coating 1440 of particulate material that may be deposited within the second portion 302 to form a

[0330] Those skilled in the art will appreciate that even if some of the particulate material and / or some of the seed material remain in the first portion 301, the amount of any such particulate material and / or seeds 122 formed from the seed material may be substantially less in the first portion 301 than in the second portion 302, and any such particulate material in the first portion 301 may tend to form a discontinuous layer 120 that may be substantially devoid of grain structure 121. If some of such particulate material in the first portion 301 is present, the grain structure 121 may be formed around the seeds 122 formed from the seed material, including, but not limited to, around the seeds 122 formed from the seed material. d Even if any such particle structure 121 d The size, height, weight, thickness, shape, profile, and / or spacing of the grain structure 121 of the second portion 302 may nevertheless be t and the absorption of EM radiation in first portion 301 may be substantially less than the absorption of EM radiation in second portion 302, including, but not limited to, wavelength (sub) ranges of the EM spectrum, including, but not limited to, the visible spectrum, and / or sub-ranges and / or wavelengths of the EM spectrum corresponding to particular colors.

[0331] In this way, non-particle structure patterned coating 323 n Each seed 1 Particle structures 121, including but not limited to coalescence around 22 t The particulate material may be selectively deposited, including but not limited to, using a shadow mask 1715, such that the particulate material can be deposited, including but not limited to, using an open mask and / or a mask-free deposition process, to form a

[0332] Those skilled in the art will appreciate that structures that exhibit relatively low reflectivity may be suitable for providing the at least one grain structure 121 in some non-limiting examples.

[0333] In some non-limiting examples, the presence of at least one particle structure 121, including but not limited to NPs, including but not limited to within the discontinuous layer 120 on the exposed layer surface 11 of the patterned coating 323, can affect some optical properties of the device 700.

[0334] Without wishing to be limited to any particular theory, it may be hypothesized that the formation of a closed coating 1440 of particulate material may be substantially inhibited by and / or on the patterned coating 323, but in some non-limiting examples, when the patterned coating 323 is exposed to deposition of particulate material thereon, some vapor monomers of the particulate material may ultimately form at least one particle structure 121 thereon.

[0335] In some non-limiting examples, at least some of the grain structures 121 may be separated from one another. In other words, in some non-limiting examples, the discontinuous layer 120 may include features including grain structures 121 that may be physically separated from one another such that the grain structures 121 do not form a closed coating 1440. Such a discontinuous layer 120 may therefore, in some non-limiting examples, include a thin dispersed layer of particulate material formed as grain structures 121 substantially intercalated at and / or across the lateral extent of the interface between the patterned coating 323 and the overlying layer 130 within the device 700.

[0336] In some non-limiting examples, at least one of the grain structures 121 may be in physical contact with the exposed layer surface 11 of the patterned coating 323. In some non-limiting examples, substantially all of the grain structures 121 may be in physical contact with the exposed layer surface 11 of the patterned coating 323.

[0337] Here, an exemplary version 800 of the user device 800 a8A, which is a simplified block diagram of a display panel 840 of a user device 800, which may, in some non-limiting examples, be a layered semiconductor device 100, although not shown, in some non-limiting examples, the thickness of a pixel defining layer (PDL) 710 in at least one signal transmissive region 820, in some non-limiting examples, at least in a region laterally spaced from an adjacent emissive region 810, and in some non-limiting examples, the thickness of a TFT insulating layer 709. a may be reduced to increase the transmission and / or transmission angle to and through the layer.

[0338] In some non-limiting examples, the lateral side 2210 (FIG. 22) of at least one emission region 810 may extend across and include at least one TFT structure 701 associated therewith for driving the emission region 810 along data and / or scan lines (not shown), which in some non-limiting examples may be formed from copper (Cu) and / or transparent conductive oxide (TCO).

[0339] In some non-limiting examples, the vapor flux 1832 of particulate material incident on the exposed layer surface 11 of the face 1001 in the second portion 302 (i.e., the exposed layer surface 11 of the face 1001 is Substructure Patterned Coating 323 p beyond the lateral sides of the first portion 301) is a grain structure patterned coating 323 p The vapor flux 1832 of particulate material on the exposed layer surface 11 within the lateral sides of the second portion 302 may be at a rate and / or duration that does not form a closed coating 1440 of particulate material thereon, as shown in FIG. 8B . In such a scenario, the vapor flux 1832 of particulate material on the exposed layer surface 11 within the lateral sides of the second portion 302 may also form at least one grain structure 121, including but not limited to, as a discontinuous layer 120, as shown in FIG. d can be formed thereon.

[0340] FIG. 8B illustrates an example version 800 of the user device 800. b 8 is a simplified block diagram of the display panel 840. b1001, when a vapor flux 1832 of particulate material is incident on the exposed layer surface 11, it forms a closed coating 1440 on the second portion 302 as the second electrode 740, as in the surface 1001, but rather forms at least one particle structure 121. d A discontinuous layer 120 including at least one grain structure 121 may be formed in the second portion 302. d When electrically coupled, the discontinuous layer 120 can function as the second electrode 740 .

[0341] In some non-limiting examples, at least one grain structure 121 of the at least one grain structure 121 of the first portion 301 t The characteristic size, length, width, diameter, height, size distribution, shape, surface coverage, configuration, deposition density, dispersity, and / or composition of the at least one grain structure 121 of the discontinuous layer 120 forming the second electrode 740 of the second portion 302. d may differ from those in

[0342] In some non-limiting examples, at least one grain structure 121 of the at least one grain structure 121 of the first portion 301 t The characteristic size of at least one grain structure 121 of the discontinuous layer 120 forming the second electrode 740 of the second portion 302 d can exceed the characteristic size of

[0343] In some non-limiting examples, at least one grain structure 121 of the at least one grain structure 121 of the first portion 301 t The surface coverage of at least one grain structure 121 of the discontinuous layer 120 forming the second electrode 740 of the second portion 302 d surface coverage may exceed 100%.

[0344] In some non-limiting examples, at least one grain structure 121 of the at least one grain structure 121 of the first portion 301 t The deposition density of the second electrode 740 of the second portion 302 is such that the grain structure 121 of the discontinuous layer 120 forming the second electrode 740 of the second portion 302 is dThe deposition density can exceed 1000 .mu.m.

[0345] In some non-limiting examples, at least one grain structure 121 of the discontinuous layer 120 forming the second electrode 740 in the second portion 302 d The characteristic size, length, width, diameter, height, size distribution, shape, surface coverage, configuration, deposition density, dispersity, and / or composition of the particles may be such that they can be electrically coupled.

[0346] In some non-limiting examples, at least one grain structure 121 of the discontinuous layer 120 forming the second electrode 740 in the second portion 302 d The characteristic size of the at least one grain structure 121 of the first portion 301 t can exceed the characteristic size of

[0347] In some non-limiting examples, at least one grain structure 121 of the discontinuous layer 120 forming the second electrode 740 in the second portion 302 d The surface coverage of the at least one grain structure 121 in the first portion 301 is t surface coverage can exceed 100%.

[0348] In some non-limiting examples, at least one grain structure 121 of the discontinuous layer 120 forming the second electrode 740 in the second portion 302 d The deposition density of the at least one grain structure 121 of the first portion 301 is t The deposition density can exceed 1000 .mu.m.

[0349] In some non-limiting examples, the second electrode 740 may extend partially over the patterned coating 323 in the transition region 815 .

[0350] In some non-limiting examples, at least one grain structure 121 of the discontinuous layer 120 forming the second electrode 740 dThe grain structure patterned coating 323 in the transition region 815 p It may extend partially over

[0351] FIG. 8C illustrates an example version 800 of the user device 800. c 8B is a simplified block diagram of the display panel 840 of FIG. b So, display panel 840 b At least one TFT structure 701 for driving an emission region 810 in the second portion 302 of the lateral side of the display panel 840 b and a first electrode 720 may extend through the TFT insulating layer 709 so as to be electrically coupled to a terminal of a power source 2105 and / or ground via at least one drive circuit incorporating such at least one TFT structure 701.

[0352] In contrast, the display panel 840 of FIG. c , there is no TFT structure 701 co-located with the driving emission region 810 within the second portion 302 of the lateral side of the face 1001. Therefore, the display panel 840 c The first electrode 720 does not penetrate the TFT insulating layer 709 .

[0353] Rather, the display panel 840 c At least one TFT structure 701 for driving an emission region 810 in the second portion 302 of the lateral side of the display panel 840 is located elsewhere (not shown) within that lateral side, and the conductive channel 825 may be a TFT insulating layer 709, in some non-limiting examples. c over the second portion 302 on the exposed layer surface 11 of the display panel 840 c In some non-limiting examples, the conductive channels 825 may extend into the lateral sides of the display panel 840. cThe conductive channel 825 can extend across at least a portion of the first portion 301 of the lateral side of the surface 1001. In some non-limiting examples, the conductive channel 825 can have an average thickness to maximize the transmittance of the EM signal 1061 passing at a non-zero angle through the layers of the surface 1001. In some non-limiting examples, the conductive channel 825 can be formed from Cu and / or TCO.

[0354] Particle Structure Patterned Coating 323 p In order to analyze the characteristics of at least one grain structure 121 formed on the exposed layer surface 11 of the present invention, a series of samples were prepared after exposing such exposed layer surface 11 to an Ag vapor flux 1832.

[0355] Particle structure patterned coatings by depositing organic materials323 p The sample was prepared by providing a grain structure patterned coating 323 on a silicon (Si) substrate 10. p A vapor flux of Ag 1832 was applied to the exposed layer surface 11 of the grain structure patterned coating 323 until a nominal thickness of 8 nm was reached. p After exposing the exposed layer surface 11 to a vapor flux 1832, a grain structure patterned coating 323 p The exposed layer surface 11 has a discrete grain structure 121 of Ag. t The formation of a discontinuous layer 120 in the form of

[0356] The features of such discontinuous layer 120 are characterized by SEM to identify the grain structure patterned coating 323 p Discontinuous grain structure 121 of Ag deposited on the exposed layer surface 11 of t Specifically, the size of the grain structure patterned coating 323 p The surface area of ​​each particle structure 121 is measured when the exposed layer surface 11 is viewed in plan view. t By calculating the average diameter when fitting the area occupied by each discrete particle structure 121 with a circle of equivalent area, tThe average diameter of the particles was calculated. An SEM micrograph of the sample is shown in FIG. 9A, and FIG. 9C shows the distribution of average diameters 910 obtained from this analysis. For comparison, a reference sample was prepared in which 8 nm of Ag was deposited directly on the Si substrate 10. An SEM micrograph of such a reference sample is shown in FIG. 9B, and an analysis 920 of this micrograph is also reflected in FIG. 9C.

[0357] As can be seen from the figure, the grain structure patterned coating 323 p Discrete Ag grain structure 121 on the exposed layer surface 11 t The median grain size of the Ag film deposited on the Si substrate 10 of the reference sample was found to be about 28 nm, while the median grain size of the Ag film deposited on the Si substrate 10 of the reference sample was found to be about 13 nm. t Particle structure patterned coating covered by 323 p The area percentage of the exposed layer surface 11 of the Si substrate 10 covered by Ag particles in the reference sample was found to be about 22.5%, while the area percentage of the exposed layer surface 11 of the Si substrate 10 covered by Ag particles in the reference sample was found to be about 48.5%.

[0358] Furthermore, particle structure patterned coating 323 p and Ag particle structure 121 t A glass sample was prepared using substantially the same process by depositing a discontinuous layer 120 of the particle structure patterned coating 323 on the glass substrate 10, and this sample (Sample B) was analyzed to determine the effect of the discontinuous layer 120 on the transmittance through the sample. p (Comparative Sample A) and by depositing an 8 nm thick Ag coating directly onto the glass substrate 10 (Comparative Sample C). The transmittance of EM radiation, expressed as a percentage of the intensity of EM radiation detected when EM radiation passes through each sample, was measured at various wavelengths for each sample and is summarized in Table 5 below.

[0359] [Table 5]

[0360] As can be seen, Sample B exhibited a relatively low EM radiation transmittance of approximately 54% at a wavelength of 450 nm in the visible spectrum, but a relatively high EM radiation transmittance of approximately 88% at a wavelength of 850 nm in the NIR spectrum, due to EM radiation absorption caused by the presence of at least one particle structure 121. Because Comparative Sample A exhibited a transmittance of approximately 90% at a wavelength of 850 nm, it can be seen that the presence of at least one particle structure 121 did not substantially attenuate the transmission of EM radiation, including but not limited to, EM signal 1061, at such wavelengths. Compared to Sample B, Comparative Sample C exhibited a relatively low transmittance of 30-40% in the visible spectrum and an even lower transmittance at a wavelength of 850 nm in the NIR spectrum.

[0361] For the purposes of the aforementioned analysis, approximately 10 nm on a 500 nm scale 2 and approximately 2.5 nm on the 200 nm scale 2 Small particle structures below a threshold area of ​​121 t were ignored as these approached the image resolution.

[0362] Display panel 10, there is shown a cross-sectional view of a display panel 840. In some non-limiting examples, the display panel 840 may have a surface 100 7. The stacked semiconductor device 100 may be a version of the stacked semiconductor device 100 including the optoelectronic device 700 terminating with the outermost layer forming 1.

[0363] The face 1001 of the display panel 840 may extend across its lateral sides substantially along a plane defined by the horizontal axis.

[0364] User Device In some non-limiting examples, surface 1001, indeed the entire display panel 840, can act as the surface of user device 800, through which at least one EM signal 1061 may be exchanged internally at a non-zero angle relative to the plane of surface 1001. In some non-limiting examples, user device 800 may be a computing device such as, but not limited to, a smartphone, a tablet, a laptop, and / or an e-reader, and / or some other electronic device such as a monitor, a television set, and / or a smart device, including, but not limited to, an automobile display and / or windshield, a consumer electronics device, and / or a medical, commercial, and / or industrial device.

[0365] In some non-limiting examples, the surface 1001 may correspond to and / or mate with the body 850 and / or opening 1051 therein within which at least one under-display component 860 may be housed.

[0366] In some non-limiting examples, at least one under-display component 860 may be formed integrally with or as an assembled module with display panel 840 on its surface opposite face 1001. In some non-limiting examples, at least one under-display component 860 may be formed on exposed layer surface 11 of substrate 10 of display panel 840 opposite face 1001.

[0367] In some non-limiting examples, at least one opening 1041 can be formed in the display panel 840 to allow exchange of at least one EM signal 1061 through the surface 1001 of the display panel 840 at a non-zero angle relative to the horizontal axis of the display panel 840 or a plane defined by the accompanying layers, including but not limited to the surface 1001 of the display panel 840.

[0368] In some non-limiting examples, the at least one opening 1041 may be understood to include a lack and / or reduction in thickness and / or opacity of a substantially opaque coating otherwise disposed across the display panel 840. In some non-limiting examples, the at least one opening 1041 may be embodied as a signal transmissive region 820, as described herein.

[0369] However the at least one opening 1041 is embodied, the at least one EM signal 1061 can pass through it, as it does through the surface 1001. As a result, the at least one EM signal 1061 can be considered to exclude any EM radiation that can extend along a plane defined by the horizontal axis, including, but not limited to, any current that can be conducted laterally across the display panel 840 and through the at least one particle structure 121.

[0370] Furthermore, one skilled in the art would understand that the at least one EM signal 1061 may be a current and / or a signal generated thereby, in that the at least one EM signal 1061 may convey some information content, including, but not limited to, an identifier that, alone or in conjunction with other EM signals 1061, may distinguish the at least one EM signal 1061 from other EM signals 1061. It will be appreciated that the information content may be distinguished from the EM radiation itself, including, but not limited to, the electric field produced by the EM radiation. In some non-limiting examples, information content may be conveyed by specifying, altering, and / or modulating at least one of the wavelength, frequency, phase, timing, bandwidth, resistance, capacitance, impedance, conductance, and / or other characteristics of at least one EM signal 1061.

[0371] In some non-limiting examples, the at least one EM signal 1061 passing through the at least one opening 1041 in the display panel 840 may include at least one photon and, in some non-limiting examples, may have a wavelength spectrum within at least one of, but not limited to, the visible light spectrum, the IR spectrum, and / or the NIR spectrum. In some non-limiting examples, the at least one EM signal 1061 passing through the at least one opening 1041 in the display panel 840 may have a wavelength within, but not limited to, the IR spectrum and / or the NIR spectrum.

[0372] In some non-limiting examples, the at least one EM signal 1061 passing through the at least one opening 1041 in the display panel 840 may include ambient light incident on the display panel 840 .

[0373] In some non-limiting examples, at least one EM signal 1061 exchanged through at least one opening 1041 in the display panel 840 may be transmitted and / or received by at least one under-display component 860.

[0374] In some non-limiting examples, the at least one under-display component 860 may have a size larger than a single signal transparent region 820, but may underlie multiple signal transparent regions 820 as well as at least one emission region 810 extending therebetween. Similarly, in some non-limiting examples, the at least one under-display component 860 may have a size larger than a single one of the at least one opening 1041.

[0375] In some non-limiting examples, the at least one under-display component 860 may transmit at least one received EM signal 1061 through at least one opening 1041 beyond the user device 800. r a receiver 860 adapted to receive and process r Such a receiver 860 may includer Non-limiting examples include under-display cameras (UDCs) and / or sensors, including, but not limited to, IR sensors or detectors, NIR sensors or detectors, LIDAR detection modules, fingerprint detection modules, light detection modules, IR (proximity) detection modules, iris recognition detection modules, and / or facial recognition detection modules, and / or portions thereof.

[0376] In some non-limiting examples, the at least one under-display component 860 may transmit at least one transmitted EM signal 1061 through at least one opening 1041 beyond the user device 800. t a transmitter 860 adapted to emit t Such a transmitter 860 may include t Non-limiting examples include EM radiation sources, including, but not limited to, built-in flash, flash devices, IR emitters, and / or NIR emitters, and / or LIDAR detection modules, fingerprint detection modules, light detection modules, IR (proximity) detection modules, iris recognition detection modules, and / or facial recognition detection modules, and / or portions thereof.

[0377] In some non-limiting examples, at least one received EM signal 1061 r transmits at least one EM signal 1061 t , the fragment being reflected from or otherwise returned by the external surface to the user device 800. .

[0378] In some non-limiting examples, including but not limited to, transmitter 860 t a transmitted EM signal 1061 emitted by at least one under-display component 860 comprising: t At least one EM signal 1061 passing through at least one opening 1041 in the display panel 840 across the user device 800 emanates from the display panel 840 and emits an emitted EM signal 1061, including r, passing through at least one opening 1041 in the display panel 840 to the receiver 860 r 8. The display may return to at least one under-display component 860 comprising:

[0379] In some non-limiting examples, under-display component 860 may include an IR emitter and an IR sensor. By way of non-limiting example, such under-display component 860 may include as a part, component, or module thereof a dot matrix projector, a time-of-flight (ToF) sensor module capable of operating as a direct ToF and / or an indirect ToF sensor, a vertical cavity surface-emitting laser (VCSEL), a flood illuminator, an NIR imager, folded optics, or a diffraction grating.

[0380] In some non-limiting examples, there may be multiple under-display components 860 in the user device 800, and a first under-display component of the multiple under-display components 730 may transmit at least one transmitted EM signal 1061 through at least one opening 1041 beyond the user device 800. t a transmitter 860 for emitting t and a second under-display component of the plurality of under-display components 730 receives at least one received EM signal 1061. r Receiver 860 for receiving r In some non-limiting examples, such a transmitter 860 t and receiver 860 r may be combined into a single common under-display component 860.

[0381] 11A, in which a version of user device 800 is shown having a display panel 840 including at least one adjacent, in some non-limiting examples, display portion 1115 separated on its lateral side (shown perpendicular to the figure) by at least one signal exchanging display portion 1116. User device 800 transmits at least one transmitted EM signal 1061 across face 1001 through at least one first signal transparent region 820 in, in some non-limiting examples, substantially corresponding, first signal exchanging display portion 1116. t at least one transmitter 860 for transmitting t and at least one received EM signal 1061 through at least one second signal transparent region 820, which in some non-limiting examples substantially corresponds, within the second signal exchange display portion 1116. r Receiver 860 for receiving r In some non-limiting examples, at least one of the first and second signal exchange display portions 1116 may be the same.

[0382] 11B shows a version of a planned user device 800, by way of a non-limiting example, including a display panel 840 that defines a face of the device 800. The device 800 includes at least one transmitter 860 positioned beyond the face 1001. t and at least one receiver 860 r FIG. 11C shows a cross-sectional view of device 800 along line 11C-11C.

[0383] The display panel 840 includes a display portion 1115 and a signal exchanging display portion 1116. The display portion 1115 has a plurality of emission regions 810 (not shown). The signal exchanging display portion 1116 includes a plurality of emission regions 810 (not shown) and a plurality of signal transmission regions 820. The plurality of emission regions 810 of the display portion 1115 and the signal exchanging display portion 1116 The plurality of signal transmitting regions 820 in the signal exchanging display portion 1116 may correspond to subpixels 84x of the panel 840. The plurality of signal transmitting regions 820 in the signal exchanging display portion 1116 may be configured to allow EM signals of a wavelength (range) corresponding to the IR spectrum to pass through their entire cross section. At least one transmitter 860 t and at least one receiver 860 r may be positioned behind a corresponding signal exchange display portion 1116, and IR signals may be emitted and received by passing through the signal exchange display portion 1116 of the panel 840. In the illustrated non-limiting example, at least one transmitter 860 t and at least one receiver 860 r Each of these is shown as having a corresponding signal exchange representation portion 1116 located in the path of the signal transmission.

[0384] FIG. 11D illustrates a version of a planned user device 800, by way of a non-limiting example, that includes at least one transmitter 860. t and at least one receiver 860 r are both located behind a common signal exchange display portion 1116. As a non-limiting example, the signal exchange display portion 1116 may be t and receiver 860 r 11E shows a cross-sectional view taken along line 11E-11E of FIG. 11D.

[0385] 11F illustrates a plan view of user device 800 according to yet another non-limiting example, where display panel 840 further includes non-display portion 1151. In some non-limiting examples, display panel 840 includes at least one transmitter 860. t and at least one receiver 860 r, each of which may be disposed behind a corresponding signal exchanging display portion 1116. The non-display portion 1151 may be disposed adjacent to and between the two signal exchanging display portions 1116 in plan view. The non-display portion 1151 may be substantially free of the emission area 810. In some non-limiting examples, the device 800 can accommodate a camera 1160 disposed in the non-display portion 1151. In some non-limiting examples, the non-display portion 1151 may include a through-hole portion 1152 that may be disposed to overlap the camera 1160. In some non-limiting examples, the panel 840 in the through-hole portion 1152 may be substantially free of layers, coatings, and / or components that may be present in the display portion 1115 and / or the signal exchanging display portion 1116. As a non-limiting example, the panel 840 in the through-hole portion 1152 may be substantially free of backplane and / or frontplane components, whose presence may otherwise interfere with images captured by the camera 1160. In some non-limiting examples, the cover glass of the panel 840 can extend substantially across the display portion 1115, the signal exchange display portion 1116, and the through-hole portion 1152 such that it can be present in all of the aforementioned portions of the panel 840. In some non-limiting examples, the panel 840 can further include a polarizer (not shown), which can extend substantially across the display portion 1115, the signal exchange display portion 1116, and the through-hole portion 1152 such that it can be present in all of the aforementioned portions of the panel 840. In some non-limiting examples, the through-hole portion 1152 can be substantially free of a polarizer to enhance transmission of light through such portion of the panel 840.

[0386] In some non-limiting examples, the non-display portion 1151 of the panel 840 may further include a non-through hole portion 1153. As a non-limiting example, the non-through hole portion 1153 may be arranged on a lateral side between the through hole portion 1152 and the signal exchanging display portion 1116. In some non-limiting examples, the non-through hole portion 1153 may surround at least a portion or the entire periphery of the through hole portion 1152. Although not specifically shown, the device 800 may include additional modules, components, and / or sensors in a portion of the device 800 corresponding to the non-through hole portion 1153 of the display panel 840.

[0387] In some non-limiting examples, the signal exchanging display portion 1116 can reduce the number of, or be substantially devoid of, backplane components that would otherwise impede or reduce the transmission of EM radiation through the signal exchanging display portion 1116. As a non-limiting example, the signal exchanging display portion 1116 may be substantially free of TFT structures 701, including, but not limited to, metal trace lines, capacitors, and / or other opaque or light-absorbing elements. In some non-limiting examples, the emissive region 810 in the signal exchanging display portion 1116 may be electrically coupled to one or more TFT structures 701 disposed in the non-display portion 1151's non-through hole portion 1153. Specifically, the TFT structures 701 for actuating the subpixels 84x in the signal exchanging display portion 1116 may be relocated outside the signal exchanging display portion 1116 and within the non-through hole portion 1153 of the panel 840 such that a relatively high transmittance of EM radiation, at least in the IR and / or NIR spectrum, through the non-emissive region 1220 (not shown) in the signal exchanging display portion 1116 may be achieved. As a non-limiting example, the TFT structure 701 in the blind hole portion 1153 may be electrically coupled to the sub-pixel 84x in the signal switching display portion 1116 via a conductive trace. In some non-limiting examples, the transmitter 860 t and receiver 860 rare positioned adjacent to and / or close to the blind hole portion 1153 on the lateral side so that the distance that current travels between the TFT structure 701 and the subpixel 84x can be reduced.

[0388] In some non-limiting examples, the light emitting regions 810 may be configured such that at least one of their aperture ratio and pixel density may be the same in both the display portion 1115 and the signal exchanging display portion 1116. In some non-limiting examples, the pixel density may be greater than at least one of approximately 300 ppi, 350 ppi, 400 ppi, 450 ppi, 500 ppi, 550 ppi, or 600 ppi. In some non-limiting examples, the aperture ratio may be at least one of approximately 25%, 27%, 30%, 33%, 35%, or 40%. In some non-limiting examples, the light emitting regions 810 or pixels 84x of the panel 840 may be shaped and arranged substantially identically between the display portion 1115 and the signal exchanging display portion 1116 to reduce the likelihood that a user will detect visual differences between the display portion 1115 and the signal exchanging display portion 1116 of the panel 840.

[0389] 11H is a partially cut-away, enlarged view of a portion of panel 840 in plan view, according to a non-limiting example. Specifically, the configuration and layout of emission regions 810, represented as subpixels 84x, in display portion 1115 and signal exchange display portion 1116 are shown. Each portion may include multiple emission regions 810, each corresponding to a subpixel 84x. In some non-limiting examples, subpixels 84x may correspond to R (red) subpixel 841, G (green) subpixel 842, and / or B (blue) subpixel 843, respectively. In signal exchange display portion 1116, multiple signal transmission regions 820 may be provided between adjacent subpixels 84x.

[0390] In some non-limiting examples, the display panel 840 may further include a transition region (not shown) between the display portion 1115 and the signal exchanging display portion 1116, and the configuration of the emission regions 810 and / or signal transmitting regions 820 may differ from the configuration of adjacent display portions 1115 and / or signal exchanging display portions 1116. In some non-limiting examples, the presence of such a transition region may be omitted, such that the emission regions 810 are provided in a substantially continuous, repeating pattern across the display portion 1115 and the signal exchanging display portion 1116.

[0391] Covering layer In some non-limiting examples, the at least one covering layer 1230 may be provided in the form of at least one layer of an outcoupling and / or encapsulation coating of the display panel 840, including, but not limited to, an outcoupling layer, CPL 1215, a layer of TFE, a polarizing layer, or other physical layers and / or coatings that may be deposited on the display panel 840 as part of the manufacturing process. In some non-limiting examples, the at least one covering layer 1230 may include lithium fluoride (LiF). In one non-limiting example, at least one cover layer 1230 may function as the overlying layer 130 .

[0392] In some non-limiting examples, CPL 1215 may be deposited over the entire surface of device 300. The function of CPL 1215 may generally be to facilitate outcoupling of light emitted by device 300, thus improving the external quantum efficiency (EQE).

[0393] In some non-limiting examples, the at least one coating layer 1230 may be deposited at least partially across a lateral extent of the surface 1001, and in some non-limiting examples, the at least one grain structure 121 of the at least one grain structure 121 of the first portion 301. t and a grain structure patterned coating 323 on the exposed layer surface 11. pIn some non-limiting examples, the at least one covering layer 1230 can also at least partially cover the second electrode 740 in the second portion 302.

[0394] In some non-limiting examples, the at least one coating layer 1230 can have a high refractive index. In some non-limiting examples, the at least one coating layer 1230 can have a grain structure patterned coating 323. p It may have a refractive index greater than the refractive index of .

[0395] In some non-limiting examples, the display panel 840 may include a particle structure patterned coating 323 p An air gap and / or air interface may be provided at the interface with the exposed layer surface 11 of the display panel 840, whether during manufacturing, after manufacturing, and / or during operation. Accordingly, in some non-limiting examples, such air gap and / or air interface may be considered to be at least one covering layer 1230. In some non-limiting examples, the display panel 840 may be provided with both the CPL 1215 and an air gap, and the at least one particle structure 121 may be covered by the CPL 1215, and the air gap may be disposed on or above the CPL 1215.

[0396] In some non-limiting examples, the particle structure 121 t At least one of the grain structures 121 may be in physical contact with at least one coating layer 1230. In some non-limiting examples, the grain structure 121 t Substantially all of may be in physical contact with at least one coating layer 1230.

[0397] Those skilled in the art will understand that there may be additional layers introduced at various stages of manufacture that are not shown.

[0398] In some non-limiting examples, at least one grain structure 121 of the first portion 301 tThe grain structure patterned layer 323 includes a patterned material 1711 having a low refractive index. p and at least one covering layer 1230 including a CPL 1215, including but not limited to a material that may have a high refractive index, can enhance outcoupling of at least one EM signal 1061 passing through the signal transmitting region 820 of the device 700 at a non-zero angle relative to that layer.

[0399] Examples of devices with grain structures Biometric Authentication In the display panel 840, as shown in FIG. 8A, at least one signal transmissive region 820 may be associated with a first portion 301 of a lateral side of the display panel 840, and a particle structure patterned coating 323 p may be disposed on the exposed layer surface 11 of the underlayer 110, and the exposed layer surface 11 may include at least one grain structure 121 t of At least one grain structure 121 comprising a discontinuous layer 120 is disposed.

[0400] In some non-limiting examples, at least one signal transparent region 820 may be substantially devoid of a closed coating 1440 of particulate material.

[0401] In some non-limiting examples, at least one signal transparent region 820 can facilitate absorption of EM radiation in at least the wavelength range of the visible light spectrum while allowing passage of EM radiation in at least the wavelength range of the IR spectrum.

[0402] In some non-limiting examples, the at least one particle structure 121 may be provided such that it exhibits greater absorption in at least a wavelength subrange of the visible spectrum than in the IR and / or NIR spectrum. In some non-limiting examples, the at least one particle structure 121 may be provided such that it absorbs EM radiation in at least a wavelength subrange of the visible spectrum and does not substantially absorb EM radiation in the IR and / or NIR spectrum.

[0403] Referring again to FIG. 11A, in some non-limiting examples, the user device 800 may include at least one transmitter 860. t At least one transmitted EM signal 1061 t and passing through the display panel 840 so that it is incident on the face, profile, or other portion of the user 1100 of the user device 800. t Fragments of the signal are reflected from or otherwise returned by the user 1100 to produce at least one received EM signal 1061. r which then passes through the display panel 840 and thus to at least one receiver 860. r are received and / or detected by

[0404] In some non-limiting examples, at least one transmitter 860 t , at least one transmitted EM signal 1061 reflected from the user 1100. t and generating at least one received EM signal 1061 associated therewith. r (collectively EM signal pair 1061) by generating at least one receiver 860 r , thereby providing biometric authentication of the user 1100.

[0405] In some non-limiting examples, at least one transmitter 860 t At least one transmitted IR signal 1061 t In some non-limiting examples, the at least one receiver 860 may be an IR emitter for emitting at least one EM signal 1061 having a wavelength range in the IR spectrum and / or the NIR spectrum. r At least one received IR signal 1061 r1061. The EM signal 1061 may be an IR sensor for receiving at least one EM signal 1061 having a wavelength in the IR spectrum and / or the NIR spectrum.

[0406] In some non-limiting examples, the signal transmissive regions 820 of the display panel 840 may be arranged in an array, with at least one transmitter 860 t and / or at least one receiver 860 r may be positioned within the user device 800 behind the display panel 840 such that at least one EM signal pair 1061 associated with them is configured to pass through at least one signal-transmitting region 820 of the display panel 840.

[0407] In some non-limiting examples, at least one transmitter 860 t and at least one receiver 860 r may be positioned to allow at least one EM signal pair 1061 associated therewith to pass through a common signal transmission region 820. In some non-limiting examples, at least one transmitter 860 t and at least one receiver 860 r are at least one pair of EM signals associated with them that have different signal penetration regions. The ion beam may be positioned to allow passage through the area 820 .

[0408] In the display panel 840, at least one emission area 810 may be associated with a second portion 302 of a lateral side of the display panel 840, and the exposed layer surface 11 of the underlying layer may have a closed coating 1440 of deposition material 1831 deposited thereon.

[0409] Thus, in some non-limiting examples, at least one transmitted IR signal 1061 t and at least one received IR signal 1061 rare transmitted through at least one signal transparent region 820, at least as long as they are in the IR spectrum, and can absorb at least a portion of these (or other) EM signals 1061, at least as long as they are in the visible spectrum, including EM signals 1061 (not shown) in at least a wavelength range of the visible spectrum that may be incident on the display panel 840 from an external source.

[0410] In this way, the IR emitter 860 t and IR detector 860 r The presence of at least one transmitted IR signal 1061 t and at least one received IR signal 1061 r 1100, can be at least partially hidden from the user 1100, including but not limited to for providing biometric authentication of the user 1100, without substantially preventing the display panel 840 from transmitting the image data.

[0411] Such a configuration of the display panel 840 may, for example, allow the IR emitter 860 to be illuminated without substantially impairing the user experience. t and / or IR detector 860 r is positioned within the user device 800 to allow at least one signal transmissive region 820 to be positioned within the lateral extent of the display panel 840 and / or to allow communication from the user 1100 to the IR emitter 860 t and / or IR detector 860 r It may be advantageous to make it easier to hide

[0412] Those skilled in the art will recognize that, in some non-limiting examples, IR emitter 860 t and / or IR detector 860 rIt will be appreciated that the at least one under-display component 860, including but not limited to, may be sized to underlie not only a single signal transparent region 820, but multiple signal transparent regions 820 and / or at least one emission region 810 extending therebetween. In such an example, the at least one under-display component 860 may be positioned under such multiple signal transparent regions 820 and may exchange EM signals 1061 passing through and at a non-zero angle relative to the layers of the display panel 840, through such multiple signal transparent regions 820.

[0413] In some non-limiting examples, the particle structure 121 t may be configured to allow transmission of EM signals 1061 in the IR and / or NIR spectrum through signal transmissive region 820 of face 1001 of display panel 840 at a non-zero angle relative to the layers of face 1001, while absorbing EM signals 1061 in at least a portion of the visible and / or UV spectrum. In some non-limiting examples, such particle structures 121 t (i) at least one coverage of about 10-50%, 10-45%, 12-40%, 15-40%, 15-35%, 18-35%, 20-35%, or 20-30%, and (ii) a particle structure 121 t and (iii) a majority of the nanoparticles may have a maximum feature size of at least one of about 40 nm, 35 nm, 30 nm, 25 nm, or 20 nm, and (iv) a mean and / or median feature size of at least one of about 5-40 nm, 5-30 nm, 8-30 nm, 10-30 nm, 8-25 nm, 10-25 nm, 8-20 nm, 10-15 nm, or 8-15 nm.

[0414] In some non-limiting examples, the particle structure 121 tmay have a characteristic size that may be in at least one of the following ranges: approximately 1 to 200 nm, 1 to 150 nm, 1 to 100 nm, 1 to 50 nm, 1 to 40 nm, 1 to 30 nm, 1 to 20 nm, 5 to 20 nm, or 8 to 15 nm, in the context of allowing transmission of EM signals 1061 in the IR and / or NIR spectrum through signal transmission region 820 of surface 1001 of display panel 840 at a non-zero angle relative to the layers of surface 1001.

[0415] In some non-limiting examples, the particle structure 121 t may have an average and / or median feature size of at least one of about 5-100 nm, 5-50 nm, 5-40 nm, 5-30 nm, 5-25 nm, 5-20 nm, or 8-15 nm, in the context of allowing transmission of EM signals 1061 in the IR and / or NIR spectrum through signal transmission region 820 of surface 1001 of display panel 840 at a non-zero angle relative to the layers of surface 1001. By way of non-limiting example, such average and / or median dimensions may be used to define the grain structure 121 of at least one grain structure 121. t can correspond to the mean diameter and / or median diameter, respectively.

[0416] In some non-limiting examples, the particle structure 121 t The majority of may have at least one maximum feature size of about 100 nm, 80 nm, 50 nm, 40 nm, 30 nm, 25 nm, 20 nm, or 15 nm or less in the context of allowing transmission of EM signals 1061 in the IR and / or NIR spectrum through signal transmission region 820 of face 1001 of display panel 840 at a non-zero angle relative to the layers of face 1001.

[0417] In some non-limiting examples, particle structures 121 in the context of enabling transmission of EM signals 1061 in the IR and / or NIR spectrum through signal transmissive region 820 of surface 1001 of display panel 840 at a non-zero angle relative to the layers of surface 1001 may have such maximum feature sizes. tmay have a coverage of at least about one of 70%, 60%, 50%, 40%, 30%, 25%, 20%, 15%, or 10% of the area of ​​the discontinuous layer 120.

[0418] Reduced UVA damage or interference In some non-limiting examples, at least one particle structure 121 can include and / or act as a UVA absorbing coating that can substantially absorb EM radiation in the UVA spectrum.

[0419] In some non-limiting examples, such a UVA absorbing coating may be provided to reduce and / or mitigate the transmission of UVA radiation through device 100. As a non-limiting example, the presence of such a UVA absorbing coating may improve the quality of the image captured by under-display component 860 through device 100 by reducing interference caused by UVA radiation.

[0420] In some non-limiting examples, at least one particle structure 121 can absorb EM radiation in at least a portion of the UV spectrum and at least a portion of the visible spectrum, but exhibits reduced and / or substantially no absorption of EM radiation in the IR and / or NIR spectrum.

[0421] Blind holes with UVA absorbing layer In some non-limiting examples, the face 1001 of the display panel 840 may have at least one blind hole region located at an edge thereof. In some non-limiting examples, the at least one blind hole region may be substantially circular when viewed in cross section, and may have a cross-sectional size of the associated under-display component 860. The blind hole region may have a cross-sectional dimension on the order of a few mm, corresponding to a surface 1001 of the display panel 840. The blind hole region allows for the exchange of at least one EM signal 1061 through the surface 1001 of the display panel 840 at a non-zero angle relative to the plane defined by the horizontal axis.

[0422] In some non-limiting examples, the blind hole region may correspond to the first portion 301 on which the patterned coating 323 is disposed. Deposition of the patterned coating 323 in the first portion 301 causes the first portion 301 to be substantially devoid of the closed coating 1440 of the deposition layer 1430 when the evaporated flux 1832 of deposition material is deposited in an open mask and / or mask-free deposition process. The absence of the closed coating 1440 of the deposition layer 1430 defines the blind hole region.

[0423] The closed coating 1440 of the deposition layer 1430 is not formed in the first portion 301 because the patterned coating 323 is deposited thereon as described herein, but the patterned coating 323 is not formed in the first portion 301 because the patterned coating 323 is deposited thereon. p and at least one grain structure 121 thereon in the discontinuous layer 120. t At least one grain structure 121 deposited in the blind hole region allows the formation of t The discontinuous layer 120 may comprise a UVA absorbing layer that absorbs EM radiation in at least a portion of the UV spectrum to reduce and / or mitigate the transmission of UVA radiation by reducing interference caused by UVA radiation and thereby enhance the image quality captured by the under-display component 860 through the blind hole region.

[0424] Low RI patterned coating Those skilled in the art can reasonably expect that the inclusion of a low refractive index base layer 110 in front of a higher refractive index upper layer 130 in the optical path of the EM radiation will, in some non-limiting examples, cause the EM radiation to be reflected back towards and from the base layer 110, thereby reducing the fraction of EM radiation that can be extracted from such a device.

[0425] However, somewhat surprisingly, it has been found that placing a low refractive index layer having a first refractive index lower than the second refractive index of the high refractive index layer in front of such a high refractive index layer in the optical path, such as between the base layer 110 and the high refractive index layer, can, at least in some non-limiting examples, exhibit enhanced outcoupling of EM radiation compared to a comparable device that does not have such a low refractive index layer between the base layer 110 and the high refractive index layer, and therefore can increase the fraction of EM radiation that can be extracted from the device.

[0426] In some non-limiting examples, a grain structure patterned coating 323 disposed in the first portion 301 of the device 100 between the underlying layer 110 and the overlying layer 130 p can function as such a lower refractive index layer as long as it exhibits a first refractive index that is lower than the second refractive index of the material comprising the upper layer 130 .

[0427] In some non-limiting examples, such enhanced outcoupling can be achieved by using a particle structure patterned coating 323 p may also be enhanced if the first refractive index is less than the third refractive index of the material comprising the underlayer 110.

[0428] In some non-limiting examples, the first refractive index may be determined and / or measured at a first wavelength range and / or at least one first wavelength (first wavelength (range)).

[0429] In some non-limiting examples, such first wavelengths (ranges) are about 315-400 nm, about 450-460 nm, about 510-540 nm, about 600-640 nm, about 456-624 nm, about 425-725 nm, about 350-450 nm, about 300-450 nm, about 300-550 nm, about 300-700 nm, about 380-740 nm, about 750-900 nm, and about 800-900 nm. The wavelength may be at least one of about 380 to 900 nm, about 300 to 900 nm, or about 380 to 900 nm.

[0430] In some non-limiting examples, the first maximum refractive index may correspond to a maximum value of the first refractive index measured within such first wavelength (range).

[0431] In some non-limiting examples, the first maximum refractive index may correspond to a maximum value of the first refractive index measured within such first wavelength (range).

[0432] In some non-limiting examples, the first refractive index can vary by no more than at least one of about 0.4, about 0.3, about 0.2, or 0.1 over such first wavelength (range).

[0433] In some non-limiting examples, the first refractive index may be less than or equal to at least one of about 1.7, about 1.6, about 1.5, about 1.45, about 1.4, about 1.35, about 1.3, or about 1.25 at such first wavelength (range).

[0434] In some non-limiting examples, the first refractive index may be at least one of about 1.2 to 1.6, about 1.2 to 1.5, about 1.25 to 1.45, or about 1.25 to 1.4 at such first wavelength (range).

[0435] In some non-limiting examples, the particle structure patterned coating 323 p and / or the patterned material, in some non-limiting examples, when deposited as a film and / or is some form of coating, forms a grain structure-patterned coating 323 in the device 300. p may exhibit a first extinction coefficient at such first wavelength (range) of less than or equal to at least one of about 0.1, 0.08, 0.05, 0.03, or 0.01 under similar circumstances as the deposition of

[0436] In some non-limiting examples, the particle structure patterned coating 323 p , and / or the patterned material, in some non-limiting examples, when deposited as a film and / or in some form, and the grain structure patterned coating 323 within the device 300p It may be substantially transparent under similar circumstances as the deposition of

[0437] In some non-limiting examples, the particle structure patterned coating 323 p , and / or the patterned material may, in some non-limiting examples, be deposited as a film, and / or some form of coating, and / or grain structure patterned coating 323 within device 300. p Under similar circumstances to the deposition of the grain structure-patterned coating 323, the grain structure-patterned coating 323 may include a substantially porous coating and / or medium having at least one void formed therein. Without wishing to be bound by any particular theory, the presence of such pores and / or voids may provide a significant advantage over a layer composed of a similar medium but substantially free of such pores and / or voids. p It may be hypothesized that this may contribute to a first decrease in refractive index. In some non-limiting examples, such a substantially porous layer and / or medium may be considered to be at least one of a microporous layer and / or medium that may include, by way of non-limiting example, at least one pore and / or void having a diameter of 2 nm or less, a mesoporous layer and / or medium that may include, by way of non-limiting example, at least one pore and / or void having a diameter of about 2-50 nm, and a microporous layer and / or medium that may include, by way of non-limiting example, at least one pore and / or void having a diameter of at least about 50 nm.

[0438] In some non-limiting examples, the second refractive index may be a second refractive index over a second wavelength range and / or at least Both may be determined and / or measured at a second wavelength (second wavelength (range)).

[0439] In some non-limiting examples, such second wavelength (range) may be at least one of about 315 to 400 nm, about 450 to 460 nm, about 510 to 540 nm, about 600 to 640 nm, about 456 to 624 nm, about 425 to 725 nm, about 350 to 450 nm, about 300 to 450 nm, about 300 to 550 nm, about 300 to 700 nm, about 380 to 740 nm, about 750 to 900 nm, about 380 to 900 nm, or about 300 to 900 nm.

[0440] In some non-limiting examples, the second maximum refractive index may correspond to the maximum value of the second refractive index measured within such second wavelength (range).

[0441] In some non-limiting examples, the first maximum refractive index may correspond to a wavelength within a first wavelength range that is different from the wavelength within a second wavelength (range) to which the second maximum refractive index corresponds.

[0442] In some non-limiting examples, the second refractive index may be at least one of about 1.7, 1.8, or 1.9.

[0443] The second refractive index at the second wavelength (range) exceeds the first refractive index at the first wavelength (range).

[0444] In some non-limiting examples, the second wavelength (range) may be the same as and / or different from the first wavelength (range).

[0445] In some non-limiting examples, the second refractive index at the second wavelength (range) may be greater than the first refractive index at the first wavelength (range) by at least one of about 0.3, about 0.4, about 0.5, about 0.7, about 1.0, about 1.2, about 1.3, about 1.4, or about 1.5.

[0446] In some non-limiting examples, the second maximum refractive index may exceed the first maximum refractive index by at least one of about 0.5, about 0.7, about 1.0, about 1.2, about 1.3, about 1.4, about 1.5, or about 1.7.

[0447] In some non-limiting examples, the upper layer 130, and / or the material comprising it, when deposited as a film and / or some form of coating, and under conditions similar to the deposition of the upper layer 130 in the device 300, may exhibit a second extinction coefficient at such second wavelength (range) of less than or equal to at least one of about 0.1, 0.08, 0.05, 0.03, or 0.01.

[0448] In some non-limiting examples, the third refractive index can be determined and / or measured in a third wavelength range and / or at least one third wavelength (third wavelength (range)).

[0449] In some non-limiting examples, such a third wavelength (range) may be at least one of about 315 to 400 nm, about 450 to 460 nm, about 510 to 540 nm, about 600 to 640 nm, about 456 to 624 nm, about 425 to 725 nm, about 350 to 450 nm, about 300 to 450 nm, about 300 to 550 nm, about 300 to 700 nm, about 380 to 740 nm, about 750 to 900 nm, about 380 to 900 nm, or between about 300 and 900 nm.

[0450] In some non-limiting examples, the third maximum refractive index is within such third wavelength (range). This may correspond to a third refractive index maximum measured at

[0451] In some non-limiting examples, the first maximum refractive index may correspond to a wavelength within the first wavelength (range) that is different from the wavelength within the third wavelength (range) to which the third maximum refractive index corresponds.

[0452] In some non-limiting examples, the third refractive index may be at least one of about 1.7, about 1.8, or about 1.9.

[0453] In some non-limiting examples, the third refractive index at the third wavelength (range) can be greater than the first refractive index at the first wavelength (range), such that, in some non-limiting examples, the particle structure-patterned coating 323 p may be between two layers containing high refractive index materials, namely the underlayer 110 and the overlayer 130.

[0454] Low RI patterned coatings with buried islands In some non-limiting examples, multiple low refractive index particle structure patterned coatings 323 deposited on top of each other p with at least one grain structure 121 deposited between them.

[0455] Somewhat surprisingly, providing a particulate material comprising the form of at least one particle structure 121 in and / or near a lower one of the at least one low refractive index particle structure patterned coatings 323 provides a first directionally oriented, at least one wavelength (sub)range of the EM spectrum, including but not limited to the visible spectrum, and / or a subrange thereof, of at least one low refractive index particle structure patterned layer 323. p It has been found that passing through the at least one particle structure 121 in a first direction and / or through it and into the higher refractive index upper layer 130 can further affect the absorption and / or transmission of EM radiation passing through the device 300.

[0456] Patterned EM radiation absorbing layer In some non-limiting examples, it may be desirable to provide an EM radiation absorbing layer in a specific region of the display panel 840. In some applications, such an EM radiation absorbing layer may be referred to as a black matrix (BM) layer, especially when the region is around but not above each (sub)pixel of the display panel 840. The EM radiation absorbing layer absorbs external EM radiation incident thereon and reduces the reflection of such EM radiation by the display panel 840. Thus, the presence of the EM radiation absorbing layer can reduce the penetration of external EM radiation incident thereon into the display panel 840, thus reducing internally reflected EM radiation that would otherwise be compensated for by implementing a polarizer on the display panel 840. Such an EM radiation absorbing layer can be shaped so as not to cover the emission region 810 of the display panel, so that the emitted radiation is not absorbed by the display panel 840 and cannot exit the display panel 840.

[0457] In some non-limiting examples, a selectively configured discontinuous layer 120 of at least one particle structure 121 of a given characteristic size, length, width, diameter, height, size distribution, shape, surface coverage, composition, deposition density, dispersion, material, cohesion, or other characteristic may function as such an EM radiation absorbing layer.

[0458] In some non-limiting examples, the EM radiation absorbing layer may include a supporting dielectric layer (not shown) that may be disposed on exposed layer surface 11 of foundation layer 110. In some non-limiting examples, such a supporting dielectric layer may be selectively deposited on only a portion of exposed layer surface 11 of foundation layer 110, including, in some non-limiting examples, second portion 302. In examples, such a supporting dielectric layer may serve to fully or partially electrically decouple the grain structure 121 of the underlying EM radiation absorbing layer. In some non-limiting examples, such a supporting dielectric layer may serve to facilitate and / or increase absorption by the EM radiation absorbing layer of EM radiation generally, or in some non-limiting examples, of a range of wavelengths. In some non-limiting examples, such a supporting dielectric layer may serve to enhance ... the grain structure-patterned coating 323. p In some non-limiting examples, such a supporting dielectric layer may include CPL 1215.

[0459] In some non-limiting examples, the EM radiation absorbing layer may include a covering dielectric layer that may be disposed on the exposed layer surface 11 of the device 300 by depositing a covering dielectric material thereon to cover the grain structure 121. In some non-limiting examples, the covering dielectric material used to form the covering dielectric layer may be the same as or different from the supporting dielectric material used to form the supporting dielectric material. In some non-limiting examples, such a covering dielectric layer may be selectively deposited on only a portion of the exposed layer surface 11, including, in some non-limiting examples, the second portion 302. In some non-limiting examples, such a covering dielectric layer may serve to electrically decouple, in whole or in part, the grain structure 121 of the overlying EM radiation absorbing layer. In some non-limiting examples, such a covering dielectric layer may serve to promote and / or increase absorption by the EM radiation absorbing layer of EM radiation generally, or, in some non-limiting examples, of a certain wavelength range. In some non-limiting examples, such a covering dielectric layer may include a CPL 1215.

[0460] NP outcoupling for increased stability Fusella et al., "Plasmonic enhancement of stability and brightness in organic light-emitting devices," Nature 2020, 585, pp. 379-382 ("Fusella et al."), report that the stability of OLED devices can be improved by incorporating an NP-based outcoupling layer on top of the cathode layer to extract energy from plasmonic modes. Fusella et al.'s NP-based outcoupling layer was fabricated by spin-casting cubic Ag NPs onto the organic layer above the cathode. However, because most commercially available OLED devices are fabricated using vacuum-based processes, spin-casting from solution may not constitute an appropriate mechanism for forming such an NP-based outcoupling layer on top of the cathode.

[0461] In some non-limiting examples, it has been discovered that such NP-based outcoupling layers over a cathode can be fabricated in a vacuum (and thus potentially suitable for use in commercial OLED manufacturing processes) by depositing a metal particle material in a discontinuous layer 120 onto a patterned coating 323 that may be deposited on the cathode. Such a process may avoid the use of solvents or other wet chemicals that may cause damage to the OLED device and / or adversely affect device reliability.

[0462] This discovery may be applied, in some non-limiting examples, to enhance the transmission (outcoupling) of photons within a given wavelength range of the EM spectrum emitted by optoelectronic devices, including but not limited to photoluminescent devices.

[0463] As non-limiting examples, optoelectronic devices may include OLED lighting panels or modules, and / or organic light emitting diode (OLED) displays or modules in computing devices such as, but not limited to, smartphones, tablets, laptops, and / or electronic readers, and / or displays in, but not limited to, monitors, televisions, and / or electronic devices. , an automobile display and / or windshield, a home appliance, and / or any other electronic device such as a smart device, including a medical, commercial, and / or industrial device.

[0464] Photon outcoupling in OLED devices can be enhanced by installing nanopatterned photonic crystal structures to control photon propagation and periodically modulate the internally reflected light waves, especially in conjunction with optical coatings with high refractive index.

[0465] Referring now to FIG. 12A, there is shown a simplified block diagram from a cross-sectional embodiment of an exemplary stacked optoelectronic device 1200 according to the present disclosure.

[0466] In some non-limiting examples, each emissive region 810 of device 1200 may correspond to a single display pixel 3310 (FIG. 33A). In some non-limiting examples, each pixel 3310 may emit light at a given wavelength spectrum. In some non-limiting examples, the wavelength spectrum may correspond to, but is not limited to, a color within the visible light spectrum.

[0467] In some non-limiting examples, each emissive region 810 of device 1200 may correspond to a sub-pixel 84x of a display pixel 3310. In some non-limiting examples, multiple sub-pixels 84x may be combined to form or represent a single display pixel 3310. In some non-limiting examples, a single display pixel 3310 may be represented by three sub-pixels 84x, which, in some non-limiting examples, may correspond to an R (red) sub-pixel 841, a G (green) sub-pixel 842, and / or a B (blue) sub-pixel 843.

[0468] In some non-limiting examples, the emission spectrum of light emitted by a given subpixel 84x may correspond to the color that the subpixel 84x is displayed as.

[0469] In some non-limiting examples, the various emissive regions 810 of device 1200 may be substantially surrounded and separated in at least one lateral direction by one or more non-emissive regions 1220 that can vary the structure and / or configuration along a longitudinal side of device 1200 to substantially suppress photons emitted therefrom. In some non-limiting examples, non-emissive regions 1220 may include those regions of a lateral side that are substantially devoid of emissive regions 810.

[0470] Thus, in some non-limiting examples, first electrode 720 may be disposed on exposed layer surface 11 of device 1200, and in some non-limiting examples, may be disposed within at least a portion of a lateral side of emission region 810. In some non-limiting examples, within a lateral side of emission region 810 of at least (sub)pixel 84x, exposed layer surface 11 may include TFT insulating layer 709 of various TFT structures 701 that make up drive circuitry for emission region 810 corresponding to a single display (sub)pixel 84x. In some non-limiting examples, first electrode 720 may extend through TFT insulating layer 709 to be electrically coupled to a terminal of a power supply and / or ground via at least one drive circuit incorporating at least one TFT structure 701.

[0471] On its longitudinal side, in some non-limiting examples, the configuration of each emissive region 810 may be defined by introducing at least one pixel-defining layer (PDL) 710 substantially across at least a portion of the lateral side of the surrounding non-emissive region 1220. In some non-limiting examples, the PDL 710 may cover an edge of the first electrode 720. In some non-limiting examples, the cross-sectional thickness and / or profile of the PDL 710 may be substantially the same as that of the surrounding non-emissive region 1220. The regions of increased thickness along the boundaries between the lateral sides of region 810 and the lateral sides of the surrounding emission region 84 can give the emission region 810 of each (sub)pixel 1220x a substantially valley-shaped configuration.

[0472] In some non-limiting examples, on at least a portion of a lateral side of such an emission region 810, at least one semiconductor layer 730 may be deposited on an exposed layer surface 11 of device 1200, which may, in some non-limiting examples, comprise a first electrode 720.

[0473] In some non-limiting examples, on at least a portion of a lateral side of such emission region 810, a second electrode 740 may be disposed on an exposed layer surface 11 of device 1200, which in some non-limiting examples may include at least one semiconductor layer 730.

[0474] In some non-limiting examples, second electrode 740 may also extend beyond the lateral sides of emitting region 810 and at least partially into the lateral sides of surrounding non-emitting region 1220. In some non-limiting examples, exposed layer surface 11 of device 1200 at the lateral sides of non-emitting region 1220 may include PDL 710.

[0475] In some non-limiting examples, the patterned coating 323 may be selectively deposited on the exposed layer surface 11 of the second electrode 740 .

[0476] In some non-limiting examples, after selective deposition of the patterned coating 323, the exposed layer surface 11 of the device 1200 can be exposed to a vapor flux 1832 of particulate material, including, but not limited to, open mask and / or mask-free deposition processes, to form at least one grain structure 121 as a discontinuous layer 120 on the exposed layer surface 11 of the patterned coating 323.

[0477] In some non-limiting examples, the at least one covering layer 1230 may be at least partially deposited across the lateral extent of the device 1200, and in some non-limiting examples, at least partially covering at least one grain structure 121 of the discontinuous layer 120 and forming an interface with the patterned coating 323 at its exposed layer surface 11. In some non-limiting examples, the at least one covering layer 1230 may be specifically deposited to do so. In some non-limiting examples, the at least one covering layer 1230 may be deposited on the device 1200 as part of the manufacturing process, but also functions as the at least one covering layer 1230.

[0478] Those skilled in the art will understand that there may be additional layers introduced at various stages of manufacture that are not shown.

[0479] In some non-limiting examples, the thin dispersion discontinuous layer 120 of the particle structure 121 can enhance outcoupling of EM radiation emitted by the emission region 810 through the at least one coating layer 1230 at the interface between the patterned coating 323 as the patterned coating 323 comprising a patterned material having a low refractive index and the at least one coating layer 1230 comprising a material having a high refractive index.

[0480] In some non-limiting examples, the particle material for forming the particle structure 121 may include at least one of Ag, Au, Cu, or Al with a view to enhancing the outcoupling of the EM radiation emitted by the emission region 810.

[0481] In some non-limiting examples, the particle structures 121 are emitted by the emission region 810. In the context of enhancing photon outcoupling, the nanoparticles may have a characteristic size within at least one of the following ranges: approximately 1-500 nm, 10-500 nm, 50-300 nm, 50-500 nm, 100-300 nm, 1-250 nm, 1-200 nm, 1-180 nm, 1-150 nm, 1-100 nm, 5-150 nm, 5-130 nm, 5-100 nm, or 5-80 nm.

[0482] In some non-limiting examples, the grain structures 121 may have an average and / or median feature size of at least one of about 10-50 nm, 50-300 nm, 50-500 nm, 100-300 nm, 5-130 nm, 10-100 nm, 10-90 nm, 15-90 nm, 20-80 nm, 20-70 nm, or 20-60 nm in the context of enhancing outcoupling of EM radiation emitted by the emission region 810. As a non-limiting example, such average and / or median dimensions may correspond to an average diameter and / or median diameter of the grain structures 121 of the discontinuous layer 120.

[0483] In some non-limiting examples, in the context of enhancing the outcoupling of EM radiation emitted by the emission region 810, the majority of the particle structures 121 may have a maximum feature size of at least one of approximately 500 nm, 300 nm, 200 nm, 130 nm, 100 nm, 90 nm, 80 nm, 60 nm, or 50 nm.

[0484] In some non-limiting examples, in the context of enhancing the outcoupling of EM radiation emitted by the emission region 810 having such a maximum feature size, the proportion of particle structures 121 can exceed at least one of approximately 50%, 60%, 75%, 80%, 90%, or 95%.

[0485] In some non-limiting examples, in the context of enhancing the outcoupling of EM radiation emitted by the emission region 810, the maximum threshold percent coverage may be at least one of approximately 75%, 60%, 50%, 35%, 30%, 25%, 20%, 15%, or 10% of the area of ​​the discontinuous layer 120.

[0486] In some non-limiting examples, the resonance imparted by at least one particle structure 121 to enhance outcoupling of emitted EM radiation can be tuned by judicious selection of at least one of the characteristic size, length, width, diameter, height, size distribution, shape, surface coverage, configuration, deposition density, dispersion, and / or composition of the particle structure 121.

[0487] In some non-limiting examples, the resonance may be tuned by varying the deposition thickness of the deposited material.

[0488] In some non-limiting examples, the resonance can be tuned by varying the average film thickness of the patterned coating 323 .

[0489] In some non-limiting examples, the resonance may be tuned by varying the thickness of the at least one coating layer 1230. In some non-limiting examples, the thickness of the at least one coating layer 1230 may range from 0 nm (corresponding to the absence of the at least one coating layer 1230) to a value that exceeds a characteristic size of the deposited grain structure 121.

[0490] In some non-limiting examples, the resonance can be tuned by changing the composition of the metal in the particle material to change the dielectric constant of the deposited particle structure 121.

[0491] In some non-limiting examples, the resonance can be achieved by patterning organic materials with different compositions. may be adjusted by doping.

[0492] In some non-limiting examples, the resonance may be tuned by selecting and / or modifying the patterned material 1711 to have a particular refractive index and / or a particular extinction coefficient.

[0493] In some non-limiting examples, the resonance may be tuned by selecting and / or modifying the material deposited as at least one coating layer 1230 to have a particular refractive index and / or a particular extinction coefficient. As a non-limiting example, a typical organic CPL 1215 material may have a refractive index in the range of about 1.8 to 2.0, while SiON, a material typically used as a TFE material, may have a refractive index in the range of about 1.8 to 2.0. x may have a refractive index that may exceed about 2.4. x may have a high extinction coefficient that may affect the desired resonance characteristics.

[0494] Those skilled in the art will appreciate that additional parameters and / or values ​​and / or ranges thereof may become apparent as suitable for tuning the resonance imparted by discontinuous layer 120 to enhance outcoupling of emitted EM radiation.

[0495] Those skilled in the art will understand that while particular values ​​and / or ranges of these parameters may be suitable for tuning the resonance provided by discontinuous layer 120 to enhance outcoupling of emitted EM radiation, other values ​​and / or ranges of such parameters may be suitable for other purposes beyond enhancing outcoupling, including increasing the performance, stability, reliability, and / or lifetime of device 1200.

[0496] Additionally, one skilled in the art will appreciate that there may be additional parameters and / or values ​​and / or ranges thereof that may be suitable for such other purposes.

[0497] FIG. 12B is a simplified block diagram of an exemplary version 1205 of the optoelectronic device 1200 of FIG. 12A . In device 1205, a CPL 1215 may be disposed between second electrode 740 and patterned coating 323. Those skilled in the art will understand that layers 10, 701, 709, 710, 720, 730, 740, and 1215 may correspond to a conventionally fabricated OLED device. Those skilled in the art will understand that there may be additional layers introduced at various stages of fabrication that are not shown. Thus, in some non-limiting examples, device 1205 can be fabricated by depositing patterned coating 323, discontinuous layer 120, and overlying layer 1230, which may be an outcoupling layer, a CPL 1215, a layer of TFE, a polarizing layer, or other physical layers and / or coatings, over such a conventionally fabricated OLED device.

[0498] 12C , there is shown a simplified block diagram of an exemplary version 1210 of the optoelectronic device 1200 of FIG. 12A . In device 1210, the patterned coating 323 may extend (at least partially) beyond the lateral sides of the emissive region 810 and along the lateral sides of the surrounding non-emissive region 1220, similar to device 1200. However, in device 1210, the discontinuous layer 120 of the grain structure 121 may extend substantially only across the lateral sides of the emissive region 810.

[0499] In some non-limiting examples, the deposited material may be substantially limited only to the lateral sides of the emission region 810 by different mechanisms, including but not limited to the use of a shadow mask.

[0500] Referring now to Figure 12D, there is shown a simplified block diagram of an exemplary version 1216 of the electroluminescent device 1200 of Figure 12A. The lateral sides of layer surface 11 may include first portion 301 and second portion 302. In first portion 301, patterned coating 323 may be selectively deposited as patterned coating 323 on exposed layer surface 11 of device 1216 substantially only across the lateral sides of emission region 810. However, in second portion 302, exposed layer surface 11 of device 1216 may be substantially devoid of patterned coating 323.

[0501] After selective deposition of the patterned coating 323 across the first portion 301, the exposed layer surface 11 of the device 1216 may be exposed to a vapor flux of deposition material 1831, which in some non-limiting examples may be and / or include a material similar to particulate material, including but not limited to open-mask and / or mask-free deposition processes.

[0502] Thus, in some non-limiting examples, the discontinuous layer 120 including at least one grain structure 121 may be formed on and limited to the exposed layer surface 11 of the patterned coating 323 of the first portion 301 substantially only across the lateral sides of the emission region 810.

[0503] Where the exposed layer surface 11 of the device 1216 may be substantially devoid of the patterned coating 323, in some non-limiting examples, a deposition material 1831, which may be a material similar to the particle material and / or may include a material similar to the particle material, may be deposited on the second portion 302 as a deposition layer 1430 ( FIG. 12 ), which is a closed coating 1440 that may function as an auxiliary electrode 1250, for non-limiting examples.

[0504] In some non-limiting examples, the average film thickness of the auxiliary electrode 1250 in the second portion 302 may be greater than the characteristic size of the grain structures 121 in the discontinuous layer 120 in the first portion 301 .

[0505] In some non-limiting examples, at least one coating layer 1230 may be deposited at least partially across the lateral extent of the device 1216, and in some non-limiting examples, at least partially coating at least one grain structure 121 of the discontinuous layer 120, forming an interface with the patterned coating 323 on its exposed layer surface 11 of the first portion 301, and in some non-limiting examples, coating the auxiliary electrode 1250 of the second portion 302.

[0506] 12E, a simplified block diagram of an exemplary version 1219 of the electroluminescent device 1200 of FIG. 12A is shown. The device 1219, patterned coating 323, and discontinuous layer 120, in some non-limiting examples, at least one cover layer 1230, may be disposed between the first electrode 720 and the second electrode 740, and in some non-limiting examples, between the at least one semiconductor layer 730 and one of the second electrode 740. In some non-limiting examples, the patterned coating 323 may include one of the at least one semiconductor layer 730, including, but not limited to, the HIL 2131 ( FIG. 21 ), the HTL 2133 ( FIG. 21 ), the ETL 2137 ( FIG. 21 ), and / or the EIL 2139 ( FIG. 21 ). In some non-limiting examples, the at least one covering layer 1230 may include another one of the at least one semiconductor layer 730, including but not limited to the ETL 2137 and / or the EIL 2137.

[0507] In some non-limiting examples, at least the second electrode 740 may have deposited thereon top of which may be deposited top layers 130, including but not limited to an outcoupling layer, a CPL 1215, a layer of TFE, a polarizing layer, or other physical layers and / or coatings.

[0508] Particles in the emission region In some non-limiting examples, a pixel 3310 can include multiple adjacent subpixels 84x, each subpixel 84x emitting EM radiation having an emission spectrum corresponding to a different wavelength range. Due to differences in wavelength spectra between adjacent subpixels 84x, the optical performance of the corresponding emitting regions 810 may differ even if the physical structure of the emitting regions 810 is the same. In some non-limiting examples, subpixels 84x of a certain wavelength range i The physical structure of the subpixel is 84x i , 84x j 84x subpixels with different wavelength ranges to tune the optical performance of the j The physical structure of the subpixels 84x can be varied. In some non-limiting examples, such tuning may provide relatively consistent optical performance among subpixels 84x for different wavelength ranges. In some non-limiting examples, such tuning may enhance the optical performance of a subpixel for a given wavelength range.

[0509] One mechanism for tuning the optical performance of subpixel 84x for a given wavelength range can utilize the ability to control the formation and / or properties of thin dispersed layers of particulate material, including but not limited to particle structures 121, and in some non-limiting examples, including but not limited to enhancing the emission and / or outcoupling of EM radiation in the wavelength range of the EM spectrum associated with such subpixel 84x.

[0510] 13, an exemplary version 1310 of device 1200 of FIG. 12A is shown. Device 1310 includes multiple sub-pixels 84x corresponding to a common pixel 3310. i , 84x j Those skilled in the art will understand that two sub-pixels 84x I , 84x j Although shown, it will be understood that in some non-limiting examples, pixel 3310 may have more than two sub-pixels 84x associated therewith. i, 84x j Each of these corresponds to the R (red), G (green), B (blue) or W (white) wavelength range, and the sub-pixels are 84x i , 84x j The other may correspond to a different wavelength range.

[0511] Some non-limiting examples include subpixel 84x i and 84x j corresponds to the emission area 810 i , 810 j In some non-limiting examples, the emission region 810 i has at least one non-emitting region 1220 a , 1220 b and the emission area 810 j has at least one non-emitting region 1220 b , 1220 c It may be surrounded by

[0512] Some non-limiting examples include subpixel 84x i The first electrode 720 corresponds to i and subpixel 84x j The first electrode 720 corresponds to j may be disposed on the exposed layer surface 11 of the device 1310, and in some non-limiting examples, a corresponding emission region 810 i , 810 j In some non-limiting examples, at least the emission region 810 i , 810 j Within the lateral sides of the exposed layer surface 11, the corresponding emission areas 810 i , 810 j Various TFT structures 701 that constitute the driving circuit of i , 701 j In some non-limiting examples, the first electrode 720 i , 720 j corresponds to at least one TFT structure 701 i , 701 j2105 and / or ground via at least one drive circuit incorporating the TFT insulating layer 709.

[0513] In some non-limiting examples, such an emission region 810 i , 810 j At least one semiconductor layer 730 may be deposited on the exposed layer surface of the device 1310, at least a portion of the lateral sides of each first electrode 720, in some non-limiting examples. i , 720 j may include:

[0514] In some non-limiting examples, the at least one semiconductor layer 730 also includes an emissive region 810 i , 810 j beyond the lateral sides of the surrounding non-emitting region 1220 a , 1220 b , 1220 c In some non-limiting examples, the exposed layer surface 11 of the device 1310 at a lateral side of the non-emitting region 1220 may include a corresponding PDL 710.

[0515] In some non-limiting examples, the lateral side of the exposed layer surface 11 of the device 1310 can include a first portion 301 and a second portion 302, where the first portion 301 is the emission region 810. i and the second portion 302 extends substantially across the lateral sides of the emission region 810. j and extends substantially across the lateral sides of the non-emitting region 1220.

[0516] In some non-limiting examples, the exposed layer surface 11 of the at least one semiconductor layer 730 is exposed to a vapor flux 1712 of a patterned material 1711, including but not limited to using a shadow mask 1715, to substantially define an emission region 810. iThe patterned coating 323 may be formed only over the lateral sides of the device 1310, i.e., the first portion 301, as the patterned coating 323. However, in the second portion 302, the exposed layer surface 11 of the device 1310 may be substantially devoid of the patterned coating 323.

[0517] After selective deposition of the patterned coating 323 across the first portion 301, the exposed layer surface 11 of the device 1310 may be exposed to a vapor flux 1832 of a deposition material 1832, which in some non-limiting examples may be and / or include a material similar to a particulate material, including but not limited to open-mask and / or mask-free deposition processes.

[0518] Thus, in some non-limiting examples, the discontinuous layer 120 including at least one grain structure 121 may substantially define the emissive region 810. i The patterned coating 323 may be formed on and limited to the exposed layer surface 11 of the patterned coating 323 in the first portion 301 only across the lateral sides of the first portion 301 .

[0519] In some non-limiting examples, the discontinuous layer 120 may be formed by the second electrode 740 i It may also function as

[0520] The exposed layer surface 11 of the device 1310 may be substantially devoid of the patterned coating 323, where the deposited material may be, by way of non-limiting example, an emission region 810. j Corresponding subpixels within 84x j The second electrode 740 j The second portion 302 may be deposited as a deposition layer 1430 that is a closed coating 1440 that can function as a

[0521] In some non-limiting examples, the second electrode 740 of the second portion 302 j The average thickness of the first portion 301 may be greater than the characteristic size of the grain structure 121 of the first portion 301.

[0522] In some non-limiting examples, the deposition material 1832 for forming the grain structure 121 may include at least one of Ag, Au, Cu, or Al in the context of enhancing the emission and / or outcoupling of EM radiation passing through its emission region 810 at a non-zero angle relative to the layers of the device 1310.

[0523] In some non-limiting examples, the grain structure 121 may be between about 1-500 nm, 10-500 nm, 50-300 nm, 50-600 nm, 60-800 nm, 70-800 nm, 80-900 nm, 90-1000 nm, 100-1500 nm, 100-2000 nm, 150-2000 nm, 150-3000 nm, 150-4000 nm, 150-5000 nm, 150-6000 nm, 150-10000 nm, 150-20000 nm, 150-30000 nm, 150-40000 nm, 150-50000 nm, 150-50000 nm, 150-10000 nm, 15 It may have a characteristic size within at least one of the following ranges: ∼500 nm, 100-300 nm, about 1-250 nm, 1-200 nm, 1-180 nm, 1-150 nm, 1-100 nm, 5-150 nm, 5-130 nm, 5-100 nm, or 5-80 nm.

[0524] In some non-limiting examples, the grain structures 121 can have an average and / or median feature size of at least one of about 10-500 nm, 50-300 nm, 50-500 nm, 100-300 nm, 5-130 nm, 10-100 nm, 10-90 nm, 15-90 nm, 20-80 nm, 20-70 nm, or 20-60 nm in the context of enhancing emission and / or outcoupling of EM radiation passing through its emission region 810 at a non-zero angle relative to the layers of the device 1310. As a non-limiting example, such average and / or median dimensions can correspond to an average diameter and / or median diameter of the grain structures 121.

[0525] In some non-limiting examples, the majority of the grain structures 121 may have a maximum feature size of at least one of approximately 500 nm, 300 nm, 200 nm, 130 nm, 100 nm, 90 nm, 80 nm, 60 nm, or 50 nm in the context of enhancing the emission and / or outcoupling of EM radiation passing through its emission region 810 at a non-zero angle relative to the layers of the device 1310.

[0526] In some non-limiting examples, in the context of enhancing the emission and / or outcoupling of EM radiation passing through the emission region 810 at a non-zero angle relative to the layers of the device 1310 having such a maximum feature size, the percentage of particle structures 121 can exceed at least one of approximately 50%, 60%, 75%, 80%, 90%, or 95%.

[0527] In some non-limiting examples, in the context of enhancing emission and / or outcoupling of EM radiation passing through the emission region 810 of the device 1310 at a non-zero angle relative to the layers of the device 1310, the maximum threshold percent coverage may be at least one of approximately 75%, 60%, 50%, 35%, 30%, 25%, 20%, 15%, or approximately 10% of the area of ​​the discontinuous layer 120.

[0528] In some non-limiting examples, at least one coating layer 1230 may be deposited at least partially across the lateral extent of the device 1310, in some non-limiting examples at least partially coating the at least one grain structure 121 and forming an interface with the patterned coating 323 on its exposed layer surface 11 of the first portion 301, and in some non-limiting examples, the second electrode 740 of the second portion 302. j Cover the

[0529] Furthermore, the at least one particle structure 121 is formed at an interface between the patterned coating 323 comprising the low refractive index patterned material and the at least one coating layer 1230 comprising the high refractive index material, through the at least one coating layer 1230 to form the emission region 810. i The outcoupling of the EM radiation emitted by the

[0530] Patterning Those skilled in the art will understand that further details of patterning the deposited material 1831 using the patterned coating 323 (whether for the purpose of forming at least one grain structure 121 or not) are described herein.

[0531] In some non-limiting examples, in first portion 301, patterned coating 323 (which may be a NIC, in some non-limiting examples) including patterned material 1711 (which may be a NIC material) is formed on first portion 301. In only the second portion 302, the patterned material 1711 may be selectively deposited as a closed coating 1440 on the exposed layer surface 11 of the underlying layer (including, but not limited to, the substrate 10) of the device 100. However, in the second portion 302, the exposed layer surface 11 of the underlying layer may be substantially devoid of the closed coating 1440 of the patterned material 1711.

[0532] Patterned Coating 14 is a cross-sectional view of a stacked semiconductor device 1400, of which device 100 may be a version in some non-limiting examples. Patterned coating 323 may include patterned material 1711. In some non-limiting examples, patterned coating 323 may include a closed coating 1440 of patterned material 1711.

[0533] The patterned coating 323 can provide the exposed layer surface 11 with a relatively low initial adhesion probability for deposition of the deposition material 1831 (in some non-limiting examples, under conditions specified in the dual QCM technique described by Walker et al.), which initial adhesion probability can, in some non-limiting examples, be substantially lower than the initial adhesion probability for deposition of the deposition material 1831 of the exposed layer surface 11 of the underlying layer of the device 1400 on which the patterned coating 323 is deposited.

[0534] Due to the low initial adhesion probability of the patterned coating 323 and / or patterned material 1711 relative to the deposition of the deposition material 1831, in some non-limiting examples, when deposited as a film and / or some form of coating, and under circumstances similar to the deposition of the patterned coating 323 in the device 1400, the first portion 301 including the patterned coating 323 may be substantially devoid of a closed coating 1440 of the deposition material 1831.

[0535] In some non-limiting examples, the patterned coating 323 and / or patterned material 1711, when deposited as a film and / or some form of coating, and under conditions similar to the deposition of the patterned coating 323 in device 1400, can have an initial sticking probability less than or equal to at least one of about 0.9, about 0.3, about 0.2, about 0.15, about 0.1, about 0.08, about 0.05, about 0.03, about 0.02, about 0.01, about 0.008, about 0.005, about 0.003, about 0.001, about 0.0008, about 0.0005, about 0.0003, or about 0.0001 relative to the deposition of the deposition material 1831, in some non-limiting examples.

[0536] In some non-limiting examples, the patterned coating 323 and / or patterned material 1711, when deposited as a film and / or some form of coating, and under circumstances similar to the deposition of the patterned coating 323 in device 1400, may have an initial sticking probability less than or equal to at least one of about 0.9, about 0.3, about 0.2, about 0.15, about 0.1, about 0.08, about 0.05, about 0.03, about 0.02, about 0.01, about 0.008, about 0.005, about 0.003, about 0.001, about 0.0008, about 0.0005, about 0.0003, or about 0.0001, relative to the deposition of Ag and / or Mg.

[0537] In some non-limiting examples, patterned coating 323 and / or patterned material 1711, when deposited as a film and / or some form of coating, and under circumstances similar to the deposition of patterned coating 323 in device 1400, may have a molecular weight of about 0.15-0.0001, about 0.1-0.0003, about 0.08-0.0005, about 0.08-0.0008, about 0.05-0.001, about 0.03-0.0001, about 0.03-0.0003, about 0.03-0.0004, about 0.03-0.0005, about 0.03-0.0006, about 0.03-0.0007, about 0.03-0.0008, about 0.05-0.001, about 0.03-0.0001, about 0.03-0.0003, about 0.03-0.0008, about 0.03-0.0009 ... 0005, approximately 0.03 to 0.0008, approximately 0.03 to 0.001, approximately 0.03 to 0.005, approximately 0.03 to 0.008, approximately 0.03 to 0.01, approximately 0.02 to 0.0001, approximately 0.02 to 0.0003, approximately 0.02 to 0.0005, approximately 0.02 to 0.0008, approximately 0.02 to 0.001, approximately 0.02 to 0.005, approximately 0.02 to 0.008, approximately 0.02 to 0.01, approximately 0.01 to 0.0001, approximately 0.01 to 0.0003, approximately 0.01 to 0.0005, approximately 0.01 to 0.00 The initial sticking probability may be at least one of about 0.08, about 0.01 to 0.001, about 0.01 to 0.005, about 0.01 to 0.008, about 0.008 to 0.0001, about 0.008 to 0.0003, about 0.008 to 0.0005, about 0.008 to 0.0008, about 0.008 to 0.001, about 0.008 to 0.005, about 0.005 to 0.0001, about 0.005 to 0.0003, about 0.005 to 0.0005, about 0.005 to 0.0008, or about 0.005 to 0.001.

[0538] In some non-limiting examples, patterned coating 323 and / or patterned material 1711, when deposited as a film and / or some form of coating, and under circumstances similar to the deposition of patterned coating 323 in device 1400, can have an initial sticking probability that is less than or equal to a threshold value for deposition of a plurality of deposition materials 1831. In some non-limiting examples, such threshold value can be at least one of about 0.3, about 0.2, about 0.18, about 0.15, about 0.13, about 0.1, about 0.08, about 0.05, about 0.03, about 0.02, about 0.01, about 0.008, about 0.005, about 0.003, or about 0.001.

[0539] In some non-limiting examples, patterned coating 323 and / or patterned material 1711, in some non-limiting examples, when deposited as a film and / or some form of coating and under conditions similar to the deposition of patterned coating 323 in device 1400, may have an initial sticking probability that is below such a threshold for deposition of a plurality of deposition materials 1831 selected from at least one of Ag, Mg, Yb, cadmium (Cd), and zinc (Zn). In some further non-limiting examples, patterned coating 323 may exhibit an initial sticking probability below such a threshold for deposition of a plurality of deposition materials 1831 selected from at least one of Ag, Mg, and Yb.

[0540] In some non-limiting examples, the patterned coating 323 and / or patterned material 1711, when deposited as a film and / or some form of coating, and under circumstances similar to the deposition of the patterned coating 323 in device 1400, may exhibit an initial sticking probability for deposition of the first deposition material 1831 below a first threshold and an initial sticking probability for deposition of the second deposition material 1831 below a second threshold. In some non-limiting examples, the first deposition material 1831 may be Ag and the second deposition material 1831 may be Mg. In some other non-limiting examples, the first deposition material 1831 may be Ag and the second deposition material 1831 may be Yb. In some other non-limiting examples, the first deposition material 1831 may be Yb and the second deposition material 1831 may be Mg. In some non-limiting examples, the first deposition material 1831 may be Ag and the second deposition material 1831 may be Mg. In some non-limiting examples, the first deposition material 1831 may be Yb and the second deposition material 1831 may be Mg. In some non-limiting examples, the first threshold may be greater than the second threshold.

[0541] In some non-limiting examples, the patterned coating 323 and / or patterned material 1711, when deposited as a film and / or some form of coating, and after being exposed to a vapor flux 1832 of deposition material 1831, including but not limited to Ag, under conditions similar to the deposition of the patterned coating 323 in device 1400, may have a transmittance to EM radiation of at least a threshold transmittance value.

[0542] In some non-limiting examples, such transmittance can be achieved by patterning a thin film. The exposed layer surface 11 of the coating 323 and / or patterned material 1711 may be measured after exposure to a vapor flux 1832 of deposition material 1831, including but not limited to Ag, under typical conditions that may be used to deposit an electrode of an optoelectronic device, which may be the cathode of an organic light emitting diode (OLED) device, as a non-limiting example.

[0543] In some non-limiting examples, the conditions for the exposed layer surface 11 to receive a vapor flux 1832 of deposition material 1831, including but not limited to Ag, may be as follows: (i) about 10 -4 Torr or 10 -5 a vacuum pressure of Torr, (ii) a vapor flux 1832 of the deposition material 1831, including but not limited to Ag, substantially corresponds to a nominal deposition rate of about 1 angstrom (Å) / second, which may be monitored and / or measured using a QCM, as a non-limiting example, and (iii) the exposed layer surface 11 is subjected to the vapor flux 1832 of the deposition material 1831, including but not limited to Ag, until a nominal average layer thickness of about 15 nm is reached, at which point the exposed layer surface 11 is no longer subjected to the vapor flux 1832 of the deposition material 1831, including but not limited to Ag.

[0544] In some non-limiting examples, the exposed layer surface 11 receiving the vapor flux 1832 of the deposition material 1831, including but not limited to Ag, may be substantially at room temperature (e.g., about 25° C.). In some non-limiting examples, the exposed layer surface 11 receiving the vapor flux 1832 of the deposition material 1831, including but not limited to Ag, may be positioned about 65 cm away from an evaporation source that evaporates the deposition material 1831, including but not limited to Ag.

[0545] In some non-limiting examples, the threshold transmittance value may be measured at a wavelength within the visible light spectrum. As a non-limiting example, the threshold transmittance value may be measured at a wavelength of about 460 nm. In some non-limiting examples, the threshold transmittance value may be measured at a wavelength in the IR and / or NIR spectrum. As a non-limiting example, the threshold transmittance value may be measured at a wavelength of about 700 nm, 900 nm, or about 1000 nm. In some non-limiting examples, the threshold transmittance value may be expressed as a percentage of incident EM power that may be transmitted through the sample. In some non-limiting examples, the threshold transmittance value may be at least one of about 60%, about 65%, about 70%, about 75%, about 80%, about 85%, or about 90%.

[0546] In some non-limiting examples, there may be a positive correlation between the initial adhesion probability of patterned coating 323 and / or patterned material 1711 relative to the deposition of deposition material 1831 and, in some non-limiting examples, the average layer thickness of deposition material 1831 thereon when deposited as a film and / or some form of coating and under circumstances similar to the deposition of patterned coating 323 in device 1400.

[0547] Those skilled in the art will appreciate that a high transmittance may generally indicate the absence of a closed coating 1440 of deposited material 1831, which may be Ag as a non-limiting example. On the other hand, a low transmittance may generally indicate the presence of a closed coating 1440 of deposited material 1831, including, but not limited to, Ag, Mg, and / or Yb, since thin metal films, especially when formed as closed coatings 1440, may exhibit high absorption of EM radiation.

[0548] It may further be hypothesized that exposed layer surfaces 11 that exhibit a low initial sticking probability to deposited materials 1831, including but not limited to Ag, Mg, and / or Yb, may exhibit high permeability, whereas exposed layer surfaces 11 that exhibit a high sticking probability to deposited materials 1831, including but not limited to Ag, Mg, and / or Yb, may exhibit low permeability.

[0549] To measure the transmittance of the example material, and to measure the exposed layer surface 11 of such example material, A series of samples were fabricated to visually observe whether a closed coating of Ag 1440 was formed thereon. Each sample was prepared by depositing an approximately 50 nm thick coating of the example material on a glass substrate 10, and then exposing the exposed layer surface 11 of the coating to an Ag vapor flux 1832 at a rate of about 1 Å / sec until a nominal layer thickness of about 15 nm was reached. Each sample was then visually analyzed, and the transmittance of each sample was measured.

[0550] The molecular structures of exemplary materials used in the samples herein are shown in Table 6 below.

[0551] [Table 6-1]

[0552] [Table 6-2]

[0553] [Table 6-3]

[0554] Samples on which a substantially closed coating 1440 of Ag was formed were visually identified, and the presence of such a coating in these samples was further confirmed by measuring the transmittance through them, which showed transmittance of about 50% or less at a wavelength of about 460 nm.

[0555] Samples were also identified that did not have a closed coating 1440 of Ag, and the absence of such a coating in these samples was further confirmed by measuring the transmittance through them, which showed a transmittance of greater than about 70% at a wavelength of about 460 nm.

[0556] The results are summarized in Table 7 below.

[0557] [Table 7]

[0558] Based on the above, it has been found that the materials used in the first seven samples (HT211 to Example Material 2) in Tables 6 and 7 may not be well suited to inhibiting the deposition of deposition materials 1831 thereon, including but not limited to Ag and / or Ag-containing materials.

[0559] On the other hand, it has been found that Example Materials 3 through 9 may be suitable, at least in some non-limiting applications, to act as patterned coatings 323 to inhibit deposition thereon of deposition materials 1831, including, but not limited to, Ag and / or Ag-containing materials.

[0560] In some non-limiting examples, patterned coating 323 and / or patterned material 1711, when deposited as a film and / or some form of coating, can have a surface energy of less than or equal to at least one of about 24 dynes / cm, about 22 dynes / cm, about 20 dynes / cm, about 18 dynes / cm, about 16 dynes / cm, about 15 dynes / cm, about 13 dynes / cm, about 12 dynes / cm, or about 11 dynes / cm under conditions similar to the deposition of patterned coating 323 in device 1400.

[0561] In some non-limiting examples, the surface energy may be at least one of about 6 dynes / cm, about 7 dynes / cm, or about 8 dynes / cm.

[0562] In some non-limiting examples, the surface energy may be at least one of about 10-20 dynes / cm, or about 13-19 dynes / cm.

[0563] In some non-limiting examples, the critical surface tension of a surface may be determined according to the Zisman method, detailed in W. A. ​​Zisman, Advances in Chemistry 43 (1964), pp. 1-51.

[0564] As a non-limiting example, a method for measuring the critical surface tension of surfaces formed by various materials is described. A series of samples were fabricated to measure the strength of the specimens, and the results are summarized in Table 8 below.

[0565] [Table 8]

[0566] Based on the foregoing measurements of critical surface tension in Table 8 and previous observations regarding the presence or absence of a substantially closed coating 1440 of Ag, it has been found that materials that form a low surface energy surface when deposited as a coating (which may be materials having at least one of a critical surface tension of about 13-20 dynes / cm, or about 13-19 dynes / cm, as non-limiting examples) may be suitable for forming a patterned coating 323 to inhibit the deposition of deposition material 1831 (including, but not limited to, Ag and / or Ag-containing materials) thereon.

[0567] Without wishing to be bound by any particular theory, it may be hypothesized, by way of non-limiting example, that materials forming surfaces having surface energies lower than about 13 dynes / cm may be less suitable as patterning material 1711 in certain applications because such materials may exhibit relatively poor adhesion to layers surrounding them, may exhibit low melting points, and / or may exhibit low sublimation temperatures.

[0568] In some non-limiting examples, patterned coating 323 and / or patterned material 1711 may have a low refractive index when deposited as a film and / or some form of coating under conditions similar to the deposition of patterned coating 323 in device 1400, in some non-limiting examples.

[0569] In some non-limiting examples, patterned coating 323 and / or patterned material 1711, when deposited as a film and / or some form of coating, can have a refractive index that can be less than or equal to at least one of about 1.55, about 1.5, about 1.45, about 1.43, about 1.4, about 1.39, about 1.37, about 1.35, about 1.32, or about 1.3 for EM radiation of a wavelength of about 550 nm under conditions similar to the deposition of patterned coating 323 in device 1400.

[0570] Without wishing to be bound by any particular theory, it has been observed that providing a patterned coating 323 with a low refractive index can enhance the transmission of external EM radiation through its second portion 302 in at least some devices 1400. As a non-limiting example, a device 1400 including an air gap therein, which may be arranged near or adjacent to the patterned coating 323, may exhibit enhanced transmission of external EM radiation when the patterned coating 323 has a low refractive index and when such a low refractive index patterned coating 323 is provided. The device may exhibit higher transmittance relative to a similarly constructed device that was not modified.

[0571] By way of non-limiting example, a series of samples were fabricated to measure the refractive index at a wavelength of 550 nm for coatings formed from several of the various example materials. The results of the measurements are summarized in Table 9 below.

[0572] [Table 9]

[0573] Based on the foregoing measurements of refractive index in Table 9 and previous observations regarding the presence or absence of a substantially closed coating 1440 of Ag in Table 7, it has been found that materials that form low refractive index coatings (which may be materials having a refractive index less than or equal to at least one of about 1.4 or 1.38, as non-limiting examples) may be suitable for forming patterned coating 323 and inhibiting deposition of deposition material 1831 (including, but not limited to, Ag and / or Ag-containing materials) thereon.

[0574] In some non-limiting examples, patterned coating 323 and / or patterned material 1711, when deposited as a film and / or some form of coating, can have an extinction coefficient that can be about 0.01 or less for photons of wavelengths that are at least one of about 600 nm, about 500 nm, about 460 nm, about 420 nm, or about 410 nm under conditions similar to the deposition of patterned coating 323 in device 1400.

[0575] In some non-limiting examples, patterned coating 323 and / or patterned material 1711, when deposited as a film and / or some form of coating, may not substantially attenuate EM radiation passing therethrough, at least in the visible light spectrum, under conditions similar to the deposition of patterned coating 323 in device 1400, in some non-limiting examples.

[0576] In some non-limiting examples, patterned coating 323 and / or patterned material 1711, when deposited as a film and / or some form of coating, may not substantially attenuate EM radiation passing therethrough, at least in the IR and / or NIR spectrum, under conditions similar to the deposition of patterned coating 323 in device 1400.

[0577] In some non-limiting examples, patterned coating 323 and / or patterned material 1711, when deposited as a film and / or some form of coating, can have an extinction coefficient that can be at least one of about 0.05, about 0.1, about 0.2, or about 0.5 for EM radiation having a wavelength shorter than at least one of about 400 nm, about 390 nm, about 380 nm, or about 370 nm under conditions similar to the deposition of patterned coating 323 in device 1400.

[0578] In this manner, patterned coating 323 and / or patterned material 1711, when deposited as a film and / or some form of coating, can absorb EM radiation in the UVA spectrum that is incident on device 1400 under conditions similar to the deposition of patterned coating 323 within device 1400, thereby reducing the likelihood that EM radiation in the UVA spectrum may have undesirable effects on device performance, device stability, device reliability, and / or device lifetime.

[0579] In some non-limiting examples, patterned coating 323 and / or patterned material 1711, when deposited as a film and / or some form of coating, can have a glass transition temperature that is less than or equal to at least one of about 300°C, about 150°C, about 130°C, about 30°C, about 0°C, about −30°C, or about −50°C under conditions similar to the deposition of patterned coating 323 in device 1400.

[0580] In some non-limiting examples, patterning material 1711 may have a sublimation temperature of at least one of about 100-320° C., about 120-300° C., about 140-280° C., or about 150-250° C. In some non-limiting examples, such a sublimation temperature may allow patterning material 1711 to be readily deposited as a coating using PVD.

[0581] The sublimation temperature of a material can be determined using a variety of methods apparent to those skilled in the art, including but not limited to, by heating the material in a crucible under high vacuum and determining the temperature that can be achieved as follows: Observe the initiation of deposition of material onto the surface on a QCM mounted at a fixed distance from the crucible, Observing a specific deposition rate onto the surface on a QCM mounted at a fixed distance from the crucible, for example, 0.1 Å / sec; and / or As a non-limiting example, about 10 -4 or about 10 -5Torr to reach the material's threshold vapor pressure.

[0582] In some non-limiting examples, the sublimation temperature of the material may be, for example, about 10 -4 The temperature that can be achieved to evaporate the material may also be determined by heating the material in an evaporation source in a high vacuum environment of 100 Torr, and thus generating a vapor flux sufficient to cause deposition of the material onto a surface on a QCM mounted a fixed distance from the evaporation source, at a deposition rate of about 0.1 Å / sec, as a non-limiting example.

[0583] In some non-limiting examples, a QCM may be mounted approximately 65 cm from the crucible for purposes of determining the sublimation temperature.

[0584] In some non-limiting examples, patterned coating 323 and / or patterned material 1711 may include fluorine (F) atoms and / or Si atoms. As a non-limiting example, patterned material 1711 for forming patterned coating 323 may be a compound including F and / or Si.

[0585] In some non-limiting examples, patterned material 1711 may include a compound containing F. In some non-limiting examples, patterned material 1711 may include a compound containing F and carbon atoms. In some non-limiting examples, patterned material 1711 may include a compound containing F and C in an atomic ratio corresponding to an F / C quotient of at least one of at least about 1, 1.5, or 2. In some non-limiting examples, the atomic ratio of F to C counts all of the F atoms present in the compound structure and counts only the C atoms present in the compound structure. Existing sp 3 It can be determined by counting only the hybridized C atoms. In some non-limiting examples, patterned material 1711 may include a compound that includes, as part of its molecular substructure, a moiety that includes F and C in an atomic ratio corresponding to an F / C quotient of at least about 1, 1.5, or 2.

[0586] In some non-limiting examples, the compound of patterning material 1711 may include an organic-inorganic hybrid material.

[0587] In some non-limiting examples, patterning material 1711 may be or include an oligomer.

[0588] In some non-limiting examples, patterning material 1711 may be or may include a compound having a molecular structure containing a backbone and at least one functional group attached to the backbone, in some non-limiting examples, the backbone may be an inorganic moiety and the at least one functional group may be an organic moiety.

[0589] In some non-limiting examples, such compounds may have a molecular structure containing a siloxane group. In some non-limiting examples, the siloxane group may be a linear, branched, or cyclic siloxane group. In some non-limiting examples, the backbone may be or may include a siloxane group. In some non-limiting examples, the backbone may be or may include a siloxane group and at least one functional group containing F. In some non-limiting examples, the at least one functional group containing F may be a fluoroalkyl group. Non-limiting examples of such compounds include fluorosiloxanes. Non-limiting examples of such compounds are Example Material 6 and Example Material 9.

[0590] In some non-limiting examples, the compound may have a molecular structure including a silsesquioxane group. In some non-limiting examples, the silsesquioxane group may be a POSS. In some non-limiting examples, the backbone may be or include a silsesquioxane group. In some non-limiting examples, the backbone may be or include a silsesquioxane group and at least one functional group containing F. In some non-limiting examples, the at least one functional group containing F may be a fluoroalkyl group. Non-limiting examples of such compounds include fluoro-silsesquioxane and / or fluoro-POSS. A non-limiting example of such a compound is Example Material 8.

[0591] In some non-limiting examples, the compound may have a molecular structure including a substituted or unsubstituted aryl group and / or a substituted or unsubstituted heteroaryl group. In some non-limiting examples, the aryl group may be phenyl or naphthyl. In some non-limiting examples, at least one C atom of the aryl group may be replaced by a heteroatom (which may be, for non-limiting examples, O, N, and / or S) to derive a heteroaryl group. In some non-limiting examples, the backbone may be or may include a substituted or unsubstituted aryl group and / or a substituted or unsubstituted heteroaryl group. In some non-limiting examples, the backbone may be or may include a substituted or unsubstituted aryl group and / or a substituted or unsubstituted heteroaryl group, and at least one functional group containing F. In some non-limiting examples, the at least one functional group containing F may be a fluoroalkyl group.

[0592] In some non-limiting examples, the compounds may have molecular structures that include substituted or unsubstituted linear, branched, or cyclic hydrocarbon groups. One or more C atoms of may be replaced by heteroatoms, which may be O, N, and / or S, as non-limiting examples.

[0593] In some non-limiting examples, the compound can have a molecular structure including a phosphazene group. In some non-limiting examples, the phosphazene group can be a linear, branched, or cyclic phosphazene group. In some non-limiting examples, the backbone can be or include a phosphazene group. In some non-limiting examples, the backbone can be or include a phosphazene group and at least one functional group including F. In some non-limiting examples, the at least one functional group including F can be a fluoroalkyl group. Non-limiting examples of such compounds include fluorophosphazenes. A non-limiting example of such a compound is Example Material 4.

[0594] In some non-limiting examples, the compound can be a fluoropolymer. In some non-limiting examples, the compound can be a block copolymer containing F. In some non-limiting examples, the compound can be an oligomer. In some non-limiting examples, the oligomer can be a fluoro-oligomer. In some non-limiting examples, the compound can be a block oligomer containing F. Non-limiting examples of fluoropolymers and / or fluoro-oligomers are those having the molecular structures of Example Material 3, Example Material 5, and / or Example Material 7.

[0595] In some non-limiting examples, the compound can be a metal complex. In some non-limiting examples, the metal complex can be an organometallic complex. In some non-limiting examples, the organometallic complex can include F. In some non-limiting examples, the organometallic complex can include at least one ligand that includes F. In some non-limiting examples, the at least one ligand that includes F can be or include a fluoroalkyl group.

[0596] In some non-limiting examples, patterning material 1711 may be or may include an organic-inorganic hybrid material.

[0597] In some non-limiting examples, patterned material 1711 may include multiple different materials.

[0598] In some non-limiting examples, the molecular weight of the compound of patterning material 1711 may be less than or equal to at least one of about 5,000 g / mol, about 4,500 g / mol, about 4,000 g / mol, about 3,800 g / mol, or about 3,500 g / mol.

[0599] In some non-limiting examples, the molecular weight of the compound of patterning material 1711 may be at least one of about 1,500 g / mol, about 1,700 g / mol, about 2,000 g / mol, about 2,200 g / mol, or about 2,500 g / mol.

[0600] Without wishing to be bound by any particular theory, it can be hypothesized that for compounds adapted to form surfaces having relatively low surface energy, at least in some applications, there may be a goal that the molecular weight of such compounds be at least one of about 1,500-5,000 g / mol, about 1,500-4,500 g / mol, about 1,700-4,500 g / mol, about 2,000-4,000 g / mol, about 2,200-4,000 g / mol, or about 2,500-3,800 g / mol.

[0601] Without wishing to be bound by any particular theory, it may be hypothesized that such compounds may exhibit at least one property that may be suitable for forming coatings and / or layers having (i) a relatively high melting point, by way of non-limiting example, of at least 100°C, (ii) a relatively low surface energy, and / or (iii) a substantially amorphous structure when deposited using a vacuum-based thermal evaporation process, by way of non-limiting example.

[0602] In some non-limiting examples, the percentage of the molar weight of such compounds that can be attributed to the presence of F atoms can be at least one of about 40-90%, about 45-85%, about 50-80%, about 55-75%, or about 60-75%. In some non-limiting examples, the F atoms can constitute a majority of the molar weight of such compounds.

[0603] In some non-limiting examples, the patterned coating 323 may be arranged in a pattern that may be defined by at least one region therein that may be substantially devoid of closed coating 1440 of the patterned coating 323. In some non-limiting examples, the at least one region may separate the patterned coating 323 into a plurality of distinct pieces thereof. In some non-limiting examples, the plurality of distinct pieces of the patterned coating 323 may be physically separated from one another at their lateral sides. In some non-limiting examples, the plurality of distinct pieces of the patterned coating 323 may be arranged in a regular structure, including, but not limited to, an array or matrix, such that in some non-limiting examples, the distinct pieces of the patterned coating 323 may be arranged in a repeating pattern.

[0604] In some non-limiting examples, at least one of the plurality of disti...

Claims

[Claim 1] The invention described in the specification.

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