Laser module and laser processing machine

Abstract

To provide a laser module capable of easily adjusting the positions of first and second semiconductor laser light sources.SOLUTION: A second mirror that transmits first light reflected by the first mirror in a second direction and reflects second light emitted from the second semiconductor laser light source in the second direction, wherein the first light is condensed at a first position on an optical path from the first semiconductor laser light source to the first mirror, the second light is condensed at a second position on an optical path from the second semiconductor laser light source to the second mirror, an optical path length from the first semiconductor laser light source to the first position is longer than an optical path length from the second semiconductor laser light source to the second position, and an optical path length from the first semiconductor laser light source to the condensing optical system is longer than an optical path length from the second semiconductor laser light source to the condensing optical system.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a laser module and a laser processing machine. [Background technology]

[0002] In order to achieve higher output, a laser module is known that combines and emits light from a plurality of semiconductor laser light sources.

[0003] For example, Patent Document 1 describes a light beam exposure device that includes a plurality of light source units having different wavelength characteristics, a dichroic mirror that combines the light beams with different wavelength characteristics emitted from the plurality of light source units, and an imaging optical system that irradiates the light beams from the dichroic mirror onto an exposure surface. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2000-141757 Summary of the Invention [Problem to be solved by the invention]

[0005] However, in the light beam exposure device described in Patent Document 1, since the plurality of light source units are arranged in a stepped manner, it is difficult to adjust the positions of the plurality of light source units. [Means for solving the problem]

[0006] One aspect of the laser module according to the present invention is a first substrate; a first semiconductor laser light source provided on the first substrate and emitting a first light in a first direction; a second semiconductor laser light source provided on the first substrate and configured to emit second light in the first direction; a first mirror that reflects the first light emitted in the first direction from the first semiconductor laser light source; a second mirror that transmits the first light reflected by the first mirror in a second direction different from the first direction and reflects the second light emitted from the second semiconductor laser light source in the second direction; a focusing optical system that focuses the first light and the second light from the second mirror; Including, the first light emitted from the first semiconductor laser light source is collected at a first position on an optical path from the first semiconductor laser light source to the first mirror, the second light emitted from the second semiconductor laser light source is collected at a second position on an optical path from the second semiconductor laser light source to the second mirror, an optical path length from the first semiconductor laser light source to the first position is longer than an optical path length from the second semiconductor laser light source to the second position; The optical path length from the first semiconductor laser light source to the focusing optical system is longer than the optical path length from the second semiconductor laser light source to the focusing optical system.

[0007] One aspect of the laser processing machine according to the present invention is: The laser module is included. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. 1 is a diagram schematically showing a laser module according to an embodiment of the present invention. [Figure 2] FIG. 1 is a diagram schematically showing a laser module according to an embodiment of the present invention. [Figure 3] FIG. 2 is a cross-sectional view schematically showing a first semiconductor laser light source of the laser module according to the embodiment. [Figure 4] FIG. 10 is a diagram schematically showing a laser module according to a first modified example of the embodiment. [Figure 5] FIG. 10 is a cross-sectional view schematically showing a first semiconductor laser light source and a position adjustment mechanism of a laser module according to a first modified example of the embodiment. [Figure 6]FIG. 10 is a diagram schematically showing a first semiconductor laser light source and a position adjustment mechanism of a laser module according to a first modified example of the embodiment. [Figure 7] FIG. 10 is a diagram schematically showing a laser module according to a second modified example of the embodiment. [Figure 8] FIG. 10 is a diagram schematically showing a laser module according to a second modified example of the embodiment. [Figure 9] FIG. 10 is a diagram schematically showing a laser module according to a second modified example of the embodiment. [Figure 10] FIG. 10 is a perspective view schematically showing a laser module according to a third modified example of the embodiment. [Figure 11] FIG. 10 is a diagram schematically showing a laser module according to a fourth modified example of the embodiment. [Figure 12] FIG. 10 is a diagram schematically showing a laser module according to a fourth modified example of the embodiment. [Figure 13] FIG. 10 is a diagram schematically showing a laser module according to a fifth modified example of the embodiment. [Figure 14] FIG. 10 is a diagram schematically showing a laser module according to a fifth modified example of the embodiment. [Figure 15] FIG. 1 is a diagram schematically showing a laser processing machine according to an embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0009] Preferred embodiments of the present invention will be described in detail below with reference to the drawings. Note that the embodiments described below do not unduly limit the content of the present invention as defined in the claims. Furthermore, not all of the configurations described below are necessarily essential components of the present invention.

[0010] 1. Laser module 1.1. Overall structure First, the laser module according to this embodiment will be described with reference to the drawings. Fig. 1 is a diagram schematically showing a laser module 100 according to this embodiment. Note that Fig. 1 illustrates an X-axis, a Y-axis, and a Z-axis as three mutually orthogonal axes.

[0011] 1, the laser module 100 includes, for example, a first substrate 11, a first semiconductor laser light source 21, a second semiconductor laser light source 22, a first mirror 31, a second mirror 32, a focusing optical system 40, and a housing 50. For convenience, the housing 50 is shown in a see-through manner in FIG.

[0012] The first substrate 11 supports the first semiconductor laser light source 21 and the second semiconductor laser light source 22. The first substrate 11 has a first plane 11a. The first plane 11a is a flat surface. The first substrate 11 is, for example, a copper substrate or a silicon substrate. The first substrate 11 dissipates heat generated by the semiconductor laser light sources 21 and 22.

[0013] The first semiconductor laser light source 21 is provided on the first plane 11a of the first substrate 11. The first semiconductor laser light source 21 is provided, for example, directly on the first plane 11a. The first semiconductor laser light source 21 has an emission surface 21a that emits light. In the example shown, the emission surface 21a is parallel to the first plane 11a. A normal N1 to the emission surface 21a is parallel to the Z axis. The emission surface 21a is the surface of the first semiconductor laser light source 21 opposite to the first substrate 11.

[0014] The first semiconductor laser light source 21 emits the first light L1 in a first direction D1. The first direction D1 is a direction along the perpendicular line N1. In the illustrated example, the first direction D1 is the +Z-axis direction. Here, "emitting light in direction A" means emitting light so that the optical axis of the light is in direction A. Similarly, "transmitting light in direction A" and "reflecting light in direction A" mean transmitting and reflecting light, respectively, so that the optical axis of the light is in direction A. "Optical axis of light" refers to the ray of the light beam that passes through the center of the focusing optical system 40.

[0015] The first light L1 emitted from the first semiconductor laser light source 21 is focused at a first position P1 on the optical path from the first semiconductor laser light source 21 to the first mirror 31. In the example shown in the figure, the first light L1 is focused at the first position P1 between the first semiconductor laser light source 21 and the first mirror 31. The first light L1 focused at the first position P1 diverges and enters the first mirror 31.

[0016] The second semiconductor laser light source 22 is provided on the first plane 11a of the first substrate 11. The second semiconductor laser light source 22 is provided, for example, directly on the first plane 11a. In the illustrated example, the semiconductor laser light sources 21 and 22 are aligned in the Y-axis direction. The emission surface 21a of the first semiconductor laser light source 21 and the emission surface 22a of the second semiconductor laser light source 22 are located on the same plane.

[0017] The second semiconductor laser light source 22 emits the second light L2 in the first direction D1. The second light L2 is focused at a second position P2 on the optical path from the second semiconductor laser light source 22 to the second mirror 32. In the example shown in the figure, the second light L2 is focused at the second position P2 between the second semiconductor laser light source 22 and the second mirror 32. The second light L2 focused at the second position P2 diverges and enters the second mirror 32.

[0018] The optical path length from the first semiconductor laser light source 21 to the first position P1 is longer than the optical path length from the second semiconductor laser light source 22 to the second position P2. In the illustrated example, the distance between the first semiconductor laser light source 21 and the first position P1 is longer than the distance between the second semiconductor laser light source 22 and the second position P2. The semiconductor laser light sources 21 and 22 are, for example, photonic crystal surface emitting lasers (PCSELs). In the semiconductor laser light sources 21 and 22, the first position P1 and the second position P2, which are the light focusing positions, can be adjusted by composite modulation by adjusting the arrangement of the photonic crystal, etc.

[0019] The radiation angle of the first light L1 emitted from the first semiconductor laser light source 21 and the radiation angle of the second light L2 emitted from the second semiconductor laser light source 22 are, for example, the same as each other.

[0020] The first mirror 31 reflects the first light L1 emitted from the first semiconductor laser light source 21 in the first direction D1 in the second direction D2. The second direction D2 is a direction different from the first direction D1. The first direction D1 and the second direction D2 are directions perpendicular to each other. In the illustrated example, the second direction D2 is the -Y-axis direction. The first mirror 31 bends the first light L1 by 90 degrees.

[0021] The second mirror 32 transmits the first light L1 reflected by the first mirror 31 in the second direction D2, and reflects the second light L2 emitted from the second semiconductor laser light source 22 in the first direction D1 in the second direction D2. The second mirror 32 then combines the first light L1 and the second light L2 and guides them to the focusing optical system 40. The second mirror 32 bends the second light L2 by 90 degrees. The optical path length from the first semiconductor laser light source 21 to the second mirror 32 is longer than the optical path length from the second semiconductor laser light source 22 to the second mirror 32. The optical path length from the first position P1 to the second mirror 32 and the optical path length from the second position P2 to the second mirror 32 are, for example, the same.

[0022] The second mirror 32 is, for example, a polarization beam combiner (PBC). For example, the semiconductor laser light sources 21 and 22, which are PCSELs, can adjust the polarization directions of the light beams L1 and L2, respectively, by composite modulation. The light beams L1 and L2 have polarization directions The first light L1 is P-polarized light, and the second light L2 is S-polarized light. In the illustrated example, the mirrors 31 and 32 are aligned in the Y-axis direction. The light L1 and L2 are incident on the second mirror 32 as light having different polarization directions. The light L1 and L2 have the same polarization direction when emitted from the semiconductor laser light sources 21 and 22, respectively, but may have different polarization directions when incident on the second mirror 32.

[0023] The first light L1 emitted from the first semiconductor laser light source 21 and the second light L2 emitted from the second semiconductor laser light source 22 may have the same polarization direction. The light L1 and L2 may be, for example, P-polarized light. In this case, as shown in FIG. 2, a λ / 2 plate 30 is provided in the optical path from the second semiconductor laser light source 22 to the second mirror 32. The λ / 2 plate 30 converts the P-polarized second light L2 emitted from the second semiconductor laser light source 22 into S-polarized light. This allows the second mirror 32 to combine the first light L1 emitted from the first semiconductor laser light source 21 and the second light L2 emitted from the second semiconductor laser light source 22. In the illustrated example, the λ / 2 plate 30 is provided between the second semiconductor laser light source 22 and the second position P2.

[0024] However, if the semiconductor laser light sources 21 and 22 are PCSELs, the polarization of the light L1 and L2 can be adjusted by composite modulation without using the λ / 2 plate 30, which reduces the number of parts and allows for size and cost reduction.

[0025] 1, the first light L1 and the second light L2 from the second mirror 32 are incident on the collecting optical system 40. Specifically, the first light L1 that has passed through the second mirror 32 and the second light L2 that has been reflected by the second mirror 32 are incident on the collecting optical system 40. The optical path length from the first semiconductor laser light source 21 to the collecting optical system 40 is longer than the optical path length from the second semiconductor laser light source 22 to the collecting optical system 40. The optical path length from the first position P1 to the collecting optical system 40 and the optical path length from the second position P2 to the collecting optical system 40 are, for example, the same.

[0026] The focusing optical system 40 focuses the light L1 and L2 from the second mirror 32. In the laser module 100, the light L1 and L2 can be focused at a focusing point F of the focusing optical system 40 so that the focusing position and focusing angle are aligned. The focusing point F is an image forming point of the focusing optical system 40. At the focusing point F, the magnification of the light source image formed by the first light L1 and the light source image formed by the second light L2 are the same. The focusing optical system 40 is a focusing lens. In the illustrated example, the focusing optical system 40 is a convex lens.

[0027] The housing 50 houses the first substrate 11, the semiconductor laser light sources 21 and 22, the mirrors 31 and 32, and the focusing optical system 40. The shape and material of the housing 50 are not particularly limited. Although not shown, the housing 50 has a window portion that transmits the light L1 and L2 that has passed through the focusing optical system 40. The housing 50 makes it easy to handle the laser module 100.

[0028] 1.2. Configuration of semiconductor laser light source 3 is a cross-sectional view schematically showing the first semiconductor laser light source 21. As shown in FIG. 3, the first semiconductor laser light source 21 has, for example, a first semiconductor layer 61, a first guide layer 62, a quantum well layer 63, a second guide layer 64, a second semiconductor layer 65, a transparent substrate 66, a first electrode 67, and a second electrode 68. The first semiconductor laser light source 21 and the second semiconductor laser light source 22 basically have the same structure. Therefore, the following description of the first semiconductor laser light source 21 can also be applied to the description of the second semiconductor laser light source 22.

[0029] The first semiconductor layer 61 is provided between the first electrode 67 and the first guide layer 62. The semiconductor layer 61 is a semiconductor layer of a first conductivity type. The first semiconductor layer 61 is, for example, a p-type semiconductor layer doped with Mg.

[0030] The first guide layer 62 is provided between the first semiconductor layer 61 and the quantum well layer 63. The first guide layer 62 has, for example, an SL (Semiconductor Superlattice) structure made up of an i-type GaN layer and an InGaN layer that are not intentionally doped with impurities. The number of GaN layers and InGaN layers that make up the first guide layer 62 is not particularly limited.

[0031] Apertures 69 are formed in the first guide layer 62. The apertures 69 are, for example, holes. The width of the apertures 69 is, for example, 50 nm or more and 500 nm or less. A plurality of apertures 69 are formed. The plurality of apertures 69 are periodically arranged when viewed from the Z-axis direction. The plurality of apertures 69 are arranged, for example, in the form of a regular triangular lattice or a square lattice. The plurality of apertures 69 can exhibit a photonic crystal effect.

[0032] The quantum well layer 63 is provided between the first guide layer 62 and the second guide layer 64. The quantum well layer 63 generates light when a current is injected into it. The quantum well layer 63 has, for example, a well layer and a barrier layer. The well layer and the barrier layer are i-type semiconductor layers that are not intentionally doped with impurities. The well layer is, for example, an InGaN layer. The barrier layer is, for example, a GaN layer. The quantum well layer 63 has an MQW (Multiple Quantum Well) structure composed of the well layer and the barrier layer.

[0033] There is no particular limitation on the number of well layers and barrier layers that make up the quantum well layer 63. For example, only one well layer may be provided, in which case the quantum well layer 63 has an SQW (Single Quantum Well) structure.

[0034] The second guide layer 64 is provided between the quantum well layer 63 and the second semiconductor layer 65. The second guide layer 64 has, for example, an SL structure composed of an i-type GaN layer and an InGaN layer that are not intentionally doped with impurities. The number of GaN layers and InGaN layers that constitute the second guide layer 64 is not particularly limited. The first guide layer 62 and the second guide layer 64 have the function of increasing the optical confinement coefficient of the first semiconductor laser light source 21. Although not shown, the multiple openings 69 may be formed in the second guide layer 64 instead of in the first guide layer 62.

[0035] The second semiconductor layer 65 is provided between the quantum well layer 63 and a transparent substrate 66. The second semiconductor layer 65 is a semiconductor layer of a second conductivity type different from the first conductivity type. The second semiconductor layer 65 is, for example, an n-type GaN layer doped with Si. The first semiconductor layer 61 and the second semiconductor layer 65 are cladding layers that have the function of confining light in the quantum well layer 63.

[0036] In the first semiconductor laser light source 21, a p-type first semiconductor layer 61, an i-type quantum well layer 63 and guide layers 62 and 64 that are not intentionally doped with impurities, and an n-type second semiconductor layer 65 form a p-i-n diode. In the first semiconductor laser light source 21, when a forward bias voltage of the p-i-n diode is applied between the first electrode 67 and the second electrode 68, a current is injected into the quantum well layer 63, causing recombination of electrons and holes in the quantum well layer 63. This recombination generates light. The light generated in the quantum well layer 63 propagates in the in-plane direction and forms a standing wave due to the photonic crystal effect of the multiple openings 69. The light then receives gain in the quantum well layer 63 and oscillates as a laser. The first semiconductor laser light source 21 then emits the diffracted light as laser light.

[0037] The transparent substrate 66 is provided between the second semiconductor layer 65 and the second electrode 68. The transparent substrate 66 transmits light generated in the quantum well layer 63. The transparent substrate 66 is made of, for example, Si. It is a doped n-type semiconductor substrate.

[0038] The first electrode 67 is provided on the opposite side of the first semiconductor layer 61 to the first guide layer 62. The first semiconductor layer 61 may be in ohmic contact with the first electrode 67. The first electrode 67 is electrically connected to the first semiconductor layer 61. The first electrode 67 is formed by laminating, for example, a Ni layer and an Au layer in this order from the first semiconductor layer 61 side. The first electrode 67 is one of the electrodes for injecting a current into the quantum well layer 63.

[0039] The second electrode 68 is provided on the transparent substrate 66 on the opposite side to the second semiconductor layer 65. The transparent substrate 66 may be in ohmic contact with the second electrode 68. The second electrode 68 is electrically connected to the second semiconductor layer 65 via the transparent substrate 66. The second electrode 68 is formed by laminating, for example, a Cr layer, a Ni layer, and an Au layer in this order from the transparent substrate 66 side. The second electrode 68 is the other electrode for injecting current into the quantum well layer 63.

[0040] A through-hole 68a is formed in the second electrode 68. Light generated in the quantum well layer 63 is emitted through the through-hole 68a. The area of ​​the transparent substrate 66 exposed by the through-hole 68a forms the emission surface 21a.

[0041] In a method for manufacturing the first semiconductor laser light source 21, the semiconductor layers 61 and 65, the guide layers 62 and 64, and the quantum well layer 63 are formed by epitaxial growth, for example, by MOCVD (Metal Organic Chemical Vapor Deposition) or MBE (Molecular Beam Epitaxy). The opening 69 is formed, for example, by patterning the first guide layer 62 using an electron beam lithography system. The electrodes 67 and 68 are formed by sputtering, vacuum deposition, CVD (Chemical Vapor Deposition), or the like. The formed first semiconductor laser light source 21 is mounted junction-down, for example, with the first electrode 67 facing the first substrate 11 shown in FIG. 1.

[0042] 1.3. Effects The laser module 100 includes a first substrate 11, a first semiconductor laser light source 21 provided on the first substrate 11 and emitting a first light L1 in a first direction D1, a second semiconductor laser light source 22 provided on the first substrate 11 and emitting a second light L2 in the first direction D1, a first mirror 31 that reflects the first light L1 emitted from the first semiconductor laser light source 21 in the first direction D1, a second mirror 32 that transmits the first light L1 reflected by the first mirror 31 in a second direction D2 different from the first direction D1 and reflects the second light L2 emitted from the second semiconductor laser light source 22 in the second direction D2, and a focusing optical system 40 that focuses the first light L1 and the second light L2 from the second mirror 32. The first light L1 emitted from the first semiconductor laser light source 21 is focused at a first position P1 on the optical path from the first semiconductor laser light source 21 to the first mirror 31, and the second light L2 emitted from the second semiconductor laser light source 22 is focused at a second position P2 on the optical path from the second semiconductor laser light source 22 to the second mirror 32. The optical path length from the first semiconductor laser light source 21 to the first position P1 is longer than the optical path length from the second semiconductor laser light source 22 to the second position P2. The optical path length from the first semiconductor laser light source 21 to the focusing optical system 40 is longer than the optical path length from the second semiconductor laser light source 22 to the focusing optical system 40.

[0043] Therefore, in the laser module 100, the positions of the first semiconductor laser light source 21 and the second semiconductor laser light source 22 can be adjusted by adjusting the position of the first substrate 11. Therefore, the positions of the semiconductor laser light sources 21, 22 can be easily adjusted. Furthermore, the semiconductor laser light sources 21, 22 can be easily mounted. Furthermore, since heat generated in the semiconductor laser light sources 21, 22 can be dissipated by the single first substrate 11, the temperature characteristics of the semiconductor laser light sources 21, 22 can be made uniform. This improves reliability and stability.

[0044] Furthermore, in the laser module 100, the optical path length from the first semiconductor laser light source 21 to the first position P1 is longer than the optical path length from the second semiconductor laser light source 22 to the second position P2, and the optical path length from the first semiconductor laser light source 21 to the focusing optical system 40 is longer than the optical path length from the second semiconductor laser light source 22 to the focusing optical system 40, so that the focusing positions and focusing angles of the light beams L1 and L2 can be aligned at the focusing point F. This makes it possible to provide a laser module 100 with high output and high BPP (Beam Parameter Products).

[0045] In the laser module 100, the first light L1 and the second light L2 are incident on the second mirror 32 as light beams having different polarization directions, and the second mirror 32 is a polarization beam combiner. Therefore, in the laser module 100, the first light L1 and the second light L2 can be combined at the second mirror 32.

[0046] In the laser module 100, the first semiconductor laser light source 21 and the second semiconductor laser light source 22 are provided on the first plane 11a of the first substrate 11. Therefore, in the laser module 100, the temperature characteristics of the semiconductor laser light sources 21 and 22 can be more uniform. Therefore, the temperatures of the semiconductor laser light sources 21 and 22 can be easily controlled.

[0047] In the laser module 100, the first semiconductor laser light source 21 and the second semiconductor laser light source 22 are photonic crystal surface emitting lasers. Therefore, in the laser module 100, the first position P1 and the second position P2 can be adjusted by composite modulation.

[0048] 2. Laser module modifications 2.1. First variant Next, a laser module according to a first modified example of this embodiment will be described with reference to the drawings. Fig. 4 is a diagram schematically showing a laser module 200 according to a first modified example of this embodiment.

[0049] Hereinafter, in the laser module 200 according to the first modified example of this embodiment, components having the same functions as the components of the laser module 100 according to this embodiment described above will be given the same symbols, and detailed descriptions thereof will be omitted.

[0050] In the laser module 100 described above, the second mirror 32 was a polarizing beam combiner.

[0051] In contrast, in the laser module 200, the second mirror 32 is a dichroic mirror.

[0052] In the laser module 200, the first light L1 emitted from the first semiconductor laser light source 21 and the second light L2 emitted from the second semiconductor laser light source 22 have different wavelengths. Therefore, the second mirror 32, which is a dichroic mirror, can transmit the first light L1 and reflect the second light L2. For example, the semiconductor laser light sources 21 and 22, which are PCSELs, can adjust the wavelengths of the lights L1 and L2 by composite modulation. The use of a PCSEL allows the wavelength of the emitted light to be precisely set. For example, the second mirror 32 transmits light having a wavelength equal to or shorter than a predetermined wavelength and reflects light having a wavelength longer than the predetermined wavelength.

[0053] 4, in the laser module 200, the semiconductor laser light sources 21 and 22 have emission surfaces at different positions in the first direction D1. This allows the light beams L1 and L2 to have the same focusing position and focusing angle at the focusing point F even if the light beams L1 and L2 have different wavelengths. In the example shown, the emission surface 21a of the first semiconductor laser light source 21 is located further in the +Z-axis direction than the emission surface 22a of the second semiconductor laser light source 22.

[0054] The laser module 200 includes a position adjustment mechanism 70 for adjusting the position in the Z-axis direction of the first semiconductor laser light source 21. The position adjustment mechanism 70 can correct chromatic aberration of the focusing optical system 40.

[0055] Here, Fig. 5 is a cross-sectional view schematically showing the first semiconductor laser light source 21 and the position adjustment mechanism 70 of the laser module 200 according to the first modified example of this embodiment. Fig. 6 is a view schematically showing the first semiconductor laser light source 21 and the position adjustment mechanism 70 of the laser module 200 according to the first modified example of this embodiment, as viewed from the Z-axis direction. Note that Fig. 5 is a cross-sectional view taken along line VV in Fig. 6. For convenience, Fig. 4 shows a simplified version of the position adjustment mechanism 70.

[0056] 5 and 6, the first semiconductor laser light source 21 is provided on the first substrate 11 via a position adjustment mechanism 70. The position adjustment mechanism 70 has, for example, an adjustment screw 72, a washer 74, and a spring 76.

[0057] The adjustment screws 72 pass through the first substrate 11 and the first semiconductor laser light source 21. In the example shown in Fig. 6, the adjustment screws 72 are provided at the four corners of the first semiconductor laser light source 21 when viewed from the Z-axis direction. In the example shown in Fig. 5, the heads of the adjustment screws 72 are provided on the side of the first substrate 11 opposite to the first semiconductor laser light source 21. The adjustment screws 72 are rotatable about an axis parallel to the Z-axis.

[0058] The washer 74 and the spring 76 are provided on the adjustment screw 72. The washer 74 and the spring 76 urge the first semiconductor laser light source 21 in a direction away from the first substrate 11. This allows the first semiconductor laser light source 21 to be displaced in the Z-axis direction relative to the first substrate 11 by rotating the adjustment screw 72.

[0059] A thermally conductive paste 78 is provided between the first semiconductor laser light source 21 and the first substrate 11. The thermally conductive paste 78 is in contact with the first semiconductor laser light source 21 and the first substrate 11. The thermally conductive paste 78 has fluidity and contractility. Therefore, even if the distance between the first semiconductor laser light source 21 and the first substrate 11 changes, the thermally conductive paste 78 can be in contact with the first semiconductor laser light source 21 and the first substrate 11. This allows the heat generated by the first semiconductor laser light source 21 to be efficiently conducted to the first substrate 11.

[0060] A method for correcting the chromatic aberration of the focusing optical system 40 includes, for example, placing a power meter at the imaging point of the focusing optical system 40, and rotating the adjustment screw 72 while driving the first semiconductor laser light source 21 to displace the position of the first semiconductor laser light source 21 in the Z-axis direction, thereby adjusting the value of the power meter to be maximum.

[0061] In the laser module 200, the first light L1 and the second light L2 have different wavelengths, and the second mirror 32 is a dichroic mirror. Therefore, in the laser module 200, the first light L1 and the second light L2 can be multiplexed at the second mirror 32.

[0062] In the laser module 200, the positions of the exit surfaces in the first direction D1 are different between the first semiconductor laser light source 21 and the second semiconductor laser light source 22. Therefore, in the laser module 200, the chromatic aberration of the focusing optical system 40 can be corrected.

[0063] Although not shown, the emission surface 21a of the first semiconductor laser light source 21 may be located in the -Z-axis direction relative to the emission surface 22a of the second semiconductor laser light source 22. The laser module 200 may also include a position adjustment mechanism 70 that adjusts the position of the second semiconductor laser light source 22 in the Z-axis direction.

[0064] Alternatively, without providing the position adjustment mechanism 70, an achromatic lens with corrected chromatic aberration may be used as the focusing optical system 40 to align the focusing positions and angles of the light beams L1 and L2 at the focusing point F. This makes it possible to make the optical path length from the first semiconductor laser light source 21 to the second mirror 32 the same as the optical path length from the first semiconductor laser light source 21 to the second mirror 32.

[0065] 2.2. Second Variant Next, a laser module according to a second modified example of this embodiment will be described with reference to the drawings. Fig. 7 is a diagram schematically showing a laser module 300 according to the second modified example of this embodiment.

[0066] Hereinafter, in the laser module 300 according to the second modified example of this embodiment, components having the same functions as the components of the laser module 100 according to this embodiment described above will be given the same symbols, and detailed descriptions thereof will be omitted.

[0067] 7, the laser module 300 differs from the above-described laser module 100 in that it includes a second substrate 12, a third semiconductor laser light source 23, a fourth semiconductor laser light source 24, a third mirror 33, a fourth mirror 34, a fifth mirror 35, and mirrors 36, 37, and 38. The second substrate 12, the semiconductor laser light sources 23 and 24, and the mirrors 33, 34, 35, 36, 37, and 38 are housed in a housing 50.

[0068] The second substrate 12 is disposed opposite the first substrate 11. The second substrate 12 supports the third semiconductor laser light source 23 and the fourth semiconductor laser light source 24. The second substrate 12 has a second plane 12a. The second plane 12a of the second substrate 12 faces the first plane 11a of the first substrate 11. The second plane 12a is a flat surface. The material of the second substrate 12 is, for example, the same as the material of the first substrate 11. The second substrate 12 dissipates heat generated by the semiconductor laser light sources 23, 24.

[0069] The third semiconductor laser light source 23 is provided on the second plane 12a of the second substrate 12. The third semiconductor laser light source 23 is provided, for example, directly on the second plane 12a. The third semiconductor laser light source 23 is provided opposite the first semiconductor laser light source 21. The third semiconductor laser light source 23 has an emission surface 23a from which light is emitted. The emission surface 21a and the emission surface 23a are parallel. The emission surface 23a is the surface of the third semiconductor laser light source 23 opposite to the second substrate 12.

[0070] The third semiconductor laser light source 23 emits the third light L3 in a third direction D3. The third direction D3 is a direction along the perpendicular line N1. The third direction D3 is a direction opposite to the first direction D1. In the illustrated example, the third direction D3 is the -Z-axis direction. The third light L3 is focused at a third position P3 on the optical path from the third semiconductor laser light source 23 to the third mirror 33. In the illustrated example, the third light L3 is focused at the third position P3 between the third semiconductor laser light source 23 and the third mirror 33. The third light L3 focused at the third position P3 diverges and enters the third mirror 33.

[0071] The fourth semiconductor laser light source 24 is provided on the second plane 12a of the second substrate 12. For example, the fourth semiconductor laser light source 24 is provided directly on the second plane 12a. The fourth semiconductor laser light source 24 is provided opposite the second semiconductor laser light source 22. In this example, the semiconductor laser light sources 23 and 24 are aligned in the Y-axis direction. The emission surface 23a of the third semiconductor laser light source 23 and the emission surface 24a of the fourth semiconductor laser light source 24 are located on the same plane.

[0072] The fourth semiconductor laser light source 24 emits fourth light L4 in the third direction D3. The fourth light L4 is collected at a fourth position P4 on the optical path from the fourth semiconductor laser light source 24 to the fourth mirror 34. In the example shown in the figure, the fourth light L4 is collected at the fourth position P4 between the fourth semiconductor laser light source 24 and the fourth mirror 34. The fourth light L4 collected at the fourth position P4 diverges and enters the fourth mirror 34.

[0073] The optical path length from the third semiconductor laser light source 23 to the third position P3 is longer than the optical path length from the fourth semiconductor laser light source 24 to the fourth position P4. In the illustrated example, the distance between the third semiconductor laser light source 23 and the third position P3 is longer than the distance between the fourth semiconductor laser light source 24 and the fourth position P4. The semiconductor laser light sources 23, 24 are, for example, PCSELs. In the semiconductor laser light sources 23, 24, the third position P3 and the fourth position P4 can be adjusted by composite modulation by adjusting the arrangement of the photonic crystal, etc.

[0074] The radiation angle of the first light L1 emitted from the first semiconductor laser light source 21, the radiation angle of the second light L2 emitted from the second semiconductor laser light source 22, the radiation angle of the third light L3 emitted from the third semiconductor laser light source 23, and the radiation angle of the fourth light L4 emitted from the fourth semiconductor laser light source 24 are, for example, the same as one another. The optical path length from the first position P1 to the focusing optical system 40, the optical path length from the second position P2 to the focusing optical system 40, the optical path length from the third position P3 to the focusing optical system 40, and the optical path length from the fourth position P4 to the focusing optical system 40 are, for example, the same as one another.

[0075] The third mirror 33 reflects the third light L3 emitted from the third semiconductor laser light source 23 in the third direction D3, in the second direction D2.

[0076] The fourth mirror 34 transmits the third light L3 reflected by the third mirror 33 in the second direction D2, and reflects the fourth light L4 emitted from the fourth semiconductor laser light source 24 in the third direction D3 in the second direction D2. The fourth mirror 34 then combines the third light L3 and the fourth light L4 and guides them to the focusing optical system 40. The optical path length from the third semiconductor laser light source 23 to the fourth mirror 34 is longer than the optical path length from the fourth semiconductor laser light source 24 to the fourth mirror 34.

[0077] The fourth mirror 34 is, for example, a polarization beam combiner. For example, the semiconductor laser light sources 23 and 24, which are PCSELs, can adjust the polarization direction of the light L3 and L4, respectively, by composite modulation. The light L3 and L4 have different polarization directions. For example, the third light L3 is P-polarized light, and the fourth light L4 is S-polarized light. In the illustrated example, the mirrors 33 and 34 are aligned in the Y-axis direction. The optical path length from the third position P3 to the fourth mirror 34 and the optical path length from the fourth position P4 to the fourth mirror 34 are, for example, the same.

[0078] The mirror 36 reflects the light L1 and L2 from the second mirror 32 in the first direction D1. The mirror 37 reflects the light L3 and L4 from the fourth mirror 34 in the third direction D3. The mirror 38 reflects the light L3 and L4 from the mirror 37 in the second direction D2.

[0079] The fifth mirror 35 is provided on the optical path from the second mirror 32 to the focusing optical system 40. Furthermore, the fifth mirror 35 is provided on the optical path from the fourth mirror 34 to the focusing optical system 40.

[0080] The fifth mirror 35 is a dichroic mirror. The first light L1 and the second light L2 are light of a single wavelength. The third light L3 and the fourth light L4 are light of a second wavelength different from the first wavelength. Therefore, the fifth mirror 35, which is a dichroic mirror, can reflect the light L1 and L2 and transmit the light L3 and L4. Specifically, the fifth mirror 35 reflects the light L1 and L2 from the second mirror 32 in the second direction D2 and transmits the light L3 and L4 from the fourth mirror 34 in the second direction D2. More specifically, the fifth mirror 35 reflects the light L1 and L2 reflected by the mirror 36 in the second direction D2 and transmits the light L3 and L4 reflected by the mirror 38 in the second direction D2. The fifth mirror 35 combines the light L1 and L2 with the light L3 and L4.

[0081] The focusing optical system 40 focuses the first light L1, the second light L2, the third light L3, and the fourth light L4. Specifically, the focusing optical system 40 focuses the light L1, L2, L3, and L4 from the fifth mirror 35 at a focusing point F.

[0082] The laser module 300 includes a second substrate 12 provided opposite to the first substrate 11, a third semiconductor laser light source 23 provided on the second substrate 12 and emitting a third light L3 in a third direction D3 opposite to the first direction D1, a fourth semiconductor laser light source 24 provided on the second substrate 12 and emitting a fourth light L4 in the third direction D3, a third mirror 33 that reflects the third light L3 emitted from the third semiconductor laser light source 23 in the third direction D3, and a third mirror 34 that reflects the third light L4 emitted from the third semiconductor laser light source 23 in the third direction D3. and a fifth mirror 35 that is provided on the optical path from the second mirror 32 to the light collecting optical system 40 and that reflects the first light L1 and the second light L2 from the second mirror 32 in the second direction D2 and transmits the third light L3 and the fourth light L4 from the fourth mirror 34 in the second direction D2. The light collecting optical system 40 collects the first light L1, the second light L2, the third light L3, and the fourth light L4 from the fifth mirror 35.

[0083] Therefore, the first light L1, the second light L2, the third light L3, and the fourth light L4 can be multiplexed in the laser module 300. This makes it possible to achieve high output.

[0084] In the laser module 300, the first light L1 and the second light L2 are light of a first wavelength, the third light L3 and the fourth light L4 are light of a second wavelength different from the first wavelength, and the fifth mirror 35 is a dichroic mirror. Therefore, in the laser module 300, the fifth mirror 35 can multiplex the first light L1, the second light L2, the third light L3, and the fourth light L4.

[0085] In the laser module 300, the third semiconductor laser light source 23 and the fourth semiconductor laser light source 24 are provided on the second plane 12a of the second substrate 12. Therefore, in the laser module 300, the temperature characteristics of the semiconductor laser light sources 23, 24 can be more uniform. Therefore, the temperatures of the semiconductor laser light sources 23, 24 can be easily controlled.

[0086] The first light L1 emitted from the first semiconductor laser light source 21, the second light L2 emitted from the second semiconductor laser light source 22, the third light L3 emitted from the third semiconductor laser light source 23, and the fourth light L4 emitted from the fourth semiconductor laser light source 24 may have the same direction of polarization. The light L1, L2, L3, and L4 may be, for example, S-polarized light.

[0087] 8, a λ / 2 plate 30 is provided on the optical path from the first semiconductor laser light source 21 to the first mirror 31 and on the optical path from the third semiconductor laser light source 23 to the third mirror 33. The λ / 2 plate 30 polarizes the first S-polarized light L1 emitted from the first semiconductor laser light source 21 and the third S-polarized light L3 emitted from the third semiconductor laser light source 23. into P-polarized light. As a result, the second mirror 32 can combine the first light L1 emitted from the first semiconductor laser light source 21 and the second light L2 emitted from the second semiconductor laser light source 22. Furthermore, the fourth mirror 34 can combine the third light L3 emitted from the third semiconductor laser light source 23 and the fourth light L4 emitted from the fourth semiconductor laser light source 24.

[0088] Furthermore, although the above describes the case where the second mirror 32 and the fourth mirror 34 are polarized beam combiners and the fifth mirror 35 is a dichroic mirror, the second mirror 32 and the fourth mirror 34 may be dichroic mirrors and the fifth mirror 35 may be a polarized beam combiner.

[0089] In this case, the first light L1 and the third light L3 are light of a first wavelength, and the second light L2 and the fourth light L4 are light of a second wavelength different from the first wavelength. The light L1 and L2 are incident on the fifth mirror 35 as light of a first polarization, and the light L3 and L4 are incident on the fifth mirror 35 as light of a second polarization different from the first polarization. The first polarization may be S-polarized light, and the second polarization may be P-polarized light. Although not shown, the semiconductor laser light sources 21 and 23 may be provided on the substrates 11 and 12, respectively, via a position adjustment mechanism 70. Furthermore, the semiconductor laser light sources 21, 22, 23, and 24 may emit light of different wavelengths.

[0090] However, semiconductor laser light sources that emit light of the same wavelength have the same temperature characteristics. Therefore, it is easier to control the temperature when the semiconductor laser light sources 21 and 22 provided on the first substrate 11 emit light of the same wavelength and the semiconductor laser light sources 23 and 24 provided on the second substrate 12 emit light of the same wavelength. This allows for stability against the environment.

[0091] Furthermore, when the second mirror 32 and the fourth mirror 34 are dichroic mirrors and the fifth mirror 35 is a polarization beam combiner, the semiconductor laser light sources 21, 22, 23, and 24 emit light of a first polarization, and as shown in FIG. 9, a λ / 2 plate 30 may be provided in the optical path from mirror 36 to mirror 37. This allows the light L3 and L4 emitted from the semiconductor laser light sources 23 and 24 to be converted from the first polarization to the second polarization. By arranging the fifth mirror 35, which is a polarization beam combiner, after the mirrors 32 and 34, which are dichroic mirrors, the number of polarization beam combiners can be reduced, thereby reducing costs.

[0092] 2.3. Third Variant Next, a laser module according to a third modified example of this embodiment will be described with reference to the drawings. Fig. 10 is a diagram schematically showing a laser module 400 according to the third modified example of this embodiment.

[0093] Hereinafter, in the laser module 400 according to the third modified example of this embodiment, components having the same functions as the components of the laser module 100 according to this embodiment described above will be given the same symbols, and detailed descriptions thereof will be omitted.

[0094] As shown in FIG. 9, the laser module 400 differs from the above-described laser module 100 in that it includes substrates 13 and 14, semiconductor laser light sources 81 and 82, and mirrors 91, 92, 93, 94, 95, and 96.

[0095] The substrates 13 and 14 are provided on the first substrate 11. The material of the substrates 13 and 14 may be the same as or different from the material of the first substrate 11. The shapes of the substrates 13 and 14 may be the same as or different from each other. By providing the substrates 13 and 14 on the first substrate 11, mounting and assembly can be facilitated. Furthermore, the substrates 13 and 14 are provided on the first substrate 11. 11.

[0096] The semiconductor laser light sources 21 and 81 are provided on a substrate 13. The semiconductor laser light sources 21 and 81 are provided on a first substrate 11 with the substrate 13 interposed therebetween. The semiconductor laser light sources 22 and 82 are provided on a substrate 14. The semiconductor laser light sources 22 and 82 are provided on the first substrate 11 with the substrate 14 interposed therebetween. The semiconductor laser light sources 81 and 82 emit light in a first direction D1. The optical axis of the light L1 emitted from the first semiconductor laser light source 21, the optical axis of the light L2 emitted from the second semiconductor laser light source 22, the optical axis of the light emitted from the semiconductor laser light source 81, and the optical axis of the light emitted from the semiconductor laser light source 82 are parallel to one another.

[0097] The semiconductor laser light sources 21 and 81 emit light of the same wavelength. The semiconductor laser light sources 22 and 82 emit light of the same wavelength. In the laser module 400, the semiconductor laser light sources 21 and 81 that emit light of the same wavelength are provided on the substrate 13, so the temperature characteristics of the semiconductor laser light sources 21 and 81 can be made the same. Furthermore, the semiconductor laser light sources 22 and 82 that emit light of the same wavelength are provided on the substrate 14, so the temperature characteristics of the semiconductor laser light sources 22 and 82 can be made the same. The semiconductor laser light sources 21 and 22 emit light of different wavelengths.

[0098] The semiconductor laser light sources 21, 22, 81, and 82 emit light of the same polarization. For example, the semiconductor laser light sources 21, 22, 81, and 82 emit S-polarized light.

[0099] Light emitted from the semiconductor laser light source 81 is focused at position Q1 on the optical path from the semiconductor laser light source 81 to the mirror 91. The optical path length from the semiconductor laser light source 81 to position Q1 is the same as the optical path length from the first semiconductor laser light source 21 to the first position P1, for example. The semiconductor laser light source 81 has basically the same configuration as the first semiconductor laser light source 21.

[0100] The light emitted from the semiconductor laser light source 82 is focused at position Q2 on the optical path from the semiconductor laser light source 82 to the mirror 92. The optical path length from the semiconductor laser light source 82 to position Q2 is the same as the optical path length from the second semiconductor laser light source 22 to the second position P2, for example. The semiconductor laser light source 82 has basically the same configuration as the second semiconductor laser light source 22.

[0101] The mirror 91 reflects the light emitted from the semiconductor laser light source 81 in the first direction D1 in the second direction D2.

[0102] The mirror 92 transmits the light from the mirror 91 in the second direction D2, and reflects the light emitted from the semiconductor laser light source 82 in the first direction D1 in the second direction D2. The mirrors 32 and 92 are dichroic mirrors.

[0103] The mirror 93 reflects the light from the second mirror 32 in a direction perpendicular to the first direction D1 and the second direction D2. The mirror 94 reflects the light from the mirror 92 in a direction perpendicular to the first direction D1 and the second direction D2. The mirror 95 reflects the light from the mirror 94 in the second direction D2. A λ / 2 plate 30 is provided in the optical path from the mirror 94 to the mirror 95. As a result, the light reflected by the mirror 94 is converted, for example, from S-polarized light to P-polarized light.

[0104] The mirror 96 reflects the light reflected by the mirror 93 in the second direction D2, and transmits the light reflected by the mirror 95 in the second direction D2. The mirror 96 is a polarization beam combiner.

[0105] The light-collecting optical system 40 collects the first light L1 emitted from the first semiconductor laser light source 21, the second light L2 emitted from the second semiconductor laser light source 22, and the second light L3 emitted from the semiconductor laser light source 81. The laser module 400 focuses the light emitted from the semiconductor laser light source 82 and the light emitted from the semiconductor laser light source 82. Therefore, compared to the laser module 100, for example, the laser module 400 can achieve higher output.

[0106] 2.4. Fourth Variant Next, a laser module according to a fourth modified example of this embodiment will be described with reference to the drawings. Fig. 11 is a diagram schematically showing a laser module 500 according to the fourth modified example of this embodiment.

[0107] Hereinafter, in the laser module 500 according to the fourth variant of this embodiment, components having the same functions as the components of the laser module 100 according to this embodiment described above will be given the same symbols, and detailed descriptions thereof will be omitted.

[0108] As shown in FIG. 11, laser module 500 differs from laser module 100 described above in that it includes semiconductor laser light sources 101, 102, 103, 104, 105, 106, 107, and 108 and mirrors 111, 112, 113, 114, 115, 116, 117, 118, 121, 122, 123, and 124.

[0109] For the sake of simplicity, part of the spread of light in the optical path from the semiconductor laser light source to the focusing optical system is omitted in Fig. 11. This also applies to Figs. 12 to 14, which will be described later.

[0110] The semiconductor laser light sources 101, 102, and 103 are provided on a first substrate 11. In the illustrated example, the semiconductor laser light sources 21, 22, 101, 102, and 103 are arranged in this order in the Y-axis direction. The semiconductor laser light sources 101, 102, and 103 emit light in a first direction D1. The optical axis of the light L1 emitted from the first semiconductor laser light source 21, the optical axis of the light L2 emitted from the second semiconductor laser light source 22, the optical axis of the light emitted from the semiconductor laser light source 101, the optical axis of the light emitted from the semiconductor laser light source 102, and the optical axis of the light emitted from the semiconductor laser light source 103 are parallel to one another.

[0111] The semiconductor laser light sources 21, 22, 101, 102, and 103 emit light beams of different wavelengths. Although not shown, the semiconductor laser light sources 21, 22, 101, 102, and 103 may be provided on the first substrate 11 via a position adjustment mechanism 70. The semiconductor laser light sources 21, 22, 101, 102, and 103 emit light beams of the same polarization. The semiconductor laser light sources 21, 22, 101, 102, and 103 emit, for example, S-polarized light beams.

[0112] The light emitted from the semiconductor laser light source 101 is focused at position R1 on the optical path from the semiconductor laser light source 101 to the mirror 111. The optical path length from the semiconductor laser light source 101 to position R1 is shorter than the optical path length from the second semiconductor laser light source 22 to the second position P2.

[0113] The light emitted from the semiconductor laser light source 102 is focused at position R2 on the optical path from the semiconductor laser light source 102 to the mirror 112. The optical path length from the semiconductor laser light source 102 to position R2 is shorter than the optical path length from the semiconductor laser light source 101 to position R1.

[0114] The light emitted from the semiconductor laser light source 103 is focused at position R3 on the optical path from the semiconductor laser light source 103 to the mirror 113. The optical path length from the semiconductor laser light source 103 to position R3 is shorter than the optical path length from the semiconductor laser light source 102 to position R2.

[0115] The semiconductor laser light sources 104, 105, 106, 107, and 108 are provided on the second substrate 12. In the illustrated example, the semiconductor laser light sources 104, 105, 106, 107, and 10 8 are arranged in this order in the Y-axis direction. The semiconductor laser light sources 104, 105, 106, 107, and 108 emit light in a first direction D1. The optical axis of the light emitted from the semiconductor laser light source 104, the optical axis of the light emitted from the semiconductor laser light source 105, the optical axis of the light emitted from the semiconductor laser light source 106, the optical axis of the light emitted from the semiconductor laser light source 107, and the optical axis of the light emitted from the semiconductor laser light source 108 are parallel to one another.

[0116] The semiconductor laser light sources 104, 105, 106, 107, and 108 emit light beams of different wavelengths. Although not shown, the semiconductor laser light sources 104, 105, 106, 107, and 108 may be provided on the second substrate 12 via a position adjustment mechanism 70. The semiconductor laser light sources 104, 105, 106, 107, and 108 emit light beams of the same polarization. The semiconductor laser light sources 104, 105, 106, 107, and 108 emit, for example, P-polarized light. The semiconductor laser light sources 101, 102, 103, 104, 105, 106, 107, and 108 are PCSELs.

[0117] The wavelength of the first light L1 emitted from the first semiconductor laser light source 21 and the wavelength of the light emitted from the semiconductor laser light source 104 may be the same. The wavelength of the second light L2 emitted from the second semiconductor laser light source 22 and the wavelength of the light emitted from the semiconductor laser light source 105 may be the same. The wavelength of the light emitted from the semiconductor laser light source 101 and the wavelength of the light emitted from the semiconductor laser light source 106 may be the same. The wavelength of the light emitted from the semiconductor laser light source 102 and the wavelength of the light emitted from the semiconductor laser light source 107 may be the same. The wavelength of the light emitted from the semiconductor laser light source 103 and the wavelength of the light emitted from the semiconductor laser light source 108 may be the same.

[0118] The light emitted from the semiconductor laser light source 104 is focused at position R4 on the optical path from the semiconductor laser light source 104 to the mirror 114. The optical path length from the semiconductor laser light source 104 to position R4 is the same as the optical path length from the first semiconductor laser light source 21 to the first position P1, for example.

[0119] The light emitted from the semiconductor laser light source 105 is focused at position R5 on the optical path from the semiconductor laser light source 105 to the mirror 115. The optical path length from the semiconductor laser light source 105 to position R5 is the same as the optical path length from the second semiconductor laser light source 22 to the second position P2, for example.

[0120] The light emitted from the semiconductor laser light source 106 is focused at position R6 on the optical path from the semiconductor laser light source 106 to the mirror 116. The optical path length from the semiconductor laser light source 106 to position R6 is the same as the optical path length from the semiconductor laser light source 101 to position R1, for example.

[0121] The light emitted from the semiconductor laser light source 107 is focused at a position R7 on the optical path from the semiconductor laser light source 107 to the mirror 117. The optical path length from the semiconductor laser light source 107 to the position R7 is the same as the optical path length from the semiconductor laser light source 102 to the position R2, for example.

[0122] The light emitted from the semiconductor laser light source 108 is focused at position R8 on the optical path from the semiconductor laser light source 108 to the mirror 118. The optical path length from the semiconductor laser light source 108 to position R8 is the same as the optical path length from the semiconductor laser light source 107 to position R7, for example.

[0123] The mirror 111 transmits the light L1 and L2 from the second mirror 32 in the second direction D2, and reflects the light emitted from the semiconductor laser light source 101 in the first direction D1 in the second direction D2.

[0124] The mirror 112 transmits the light from the mirror 111 in the second direction D2, and reflects the light emitted from the semiconductor laser light source 102 in the first direction D1 in the second direction D2.

[0125] The mirror 113 transmits the light from the mirror 112 in the second direction D2, and reflects the light emitted from the semiconductor laser light source 103 in the first direction D1 in the second direction D2. The mirrors 32, 111, 112, and 113 are dichroic mirrors.

[0126] The mirror 114 reflects the light emitted from the semiconductor laser light source 104 in the first direction D1 in the second direction D2.

[0127] The mirror 115 transmits the light reflected by the mirror 114 in the second direction D2, and reflects the light emitted from the semiconductor laser light source 105 in the first direction D1 in the second direction D2.

[0128] The mirror 116 transmits the light from the mirror 115 in the second direction D2, and reflects the light emitted from the semiconductor laser light source 106 in the first direction D1 in the second direction D2.

[0129] The mirror 117 transmits the light from the mirror 116 in the second direction D2, and reflects the light emitted from the semiconductor laser light source 107 in the first direction D1 in the second direction D2.

[0130] Mirror 118 transmits the light from mirror 117 in the second direction D2, and reflects the light emitted from semiconductor laser light source 108 in the first direction D1 in the second direction D2. Mirrors 114, 115, 116, 117, and 118 are dichroic mirrors.

[0131] Mirror 121 reflects the light from mirror 113 in a first direction D1. Mirror 122 reflects the light from mirror 118 in the direction opposite to first direction D1. Mirror 123 reflects the light from mirror 122 in a second direction D2.

[0132] Mirror 124 reflects the light from mirror 121 in the second direction D2, and transmits the light from mirror 123 in the second direction D2. Mirror 124 is a polarization beam combiner.

[0133] The light-collecting optical system 40 collects the light emitted from the semiconductor laser light sources 21, 22, 101, 102, 103, 104, 105, 106, 107, and 108. Therefore, the laser module 500 can achieve higher output than the laser module 100.

[0134] The semiconductor laser light sources 104, 105, 106, 107, and 108 may emit light of the same polarization as that of the semiconductor laser light sources 21, 22, 101, 102, and 103. In this case, as shown in Fig. 12, a λ / 2 plate 30 is provided in the optical path from mirror 122 to mirror 123. This allows the light emitted from the semiconductor laser light sources 104, 105, 106, 107, and 108 to be converted from S-polarized light to P-polarized light, for example.

[0135] Furthermore, the number of semiconductor laser light sources and the number of mirrors are not particularly limited.

[0136] 2.5. Fifth Variant Next, a laser module according to a fifth modified example of this embodiment will be described with reference to the drawings. Fig. 13 is a diagram schematically showing a laser module 600 according to the fifth modified example of this embodiment.

[0137] Hereinafter, in the laser module 600 according to the fifth modification of this embodiment, Components having the same functions as those of the laser module 100 according to the embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted.

[0138] As shown in FIG. 13, the laser module 600 differs from the above-described laser module 100 in that it includes semiconductor laser light sources 131, 132, 133, and 134 and mirrors 141, 142, 143, 144, 145, 146, and 147.

[0139] The semiconductor laser light sources 131, 132, 133, and 134 are provided on the first substrate 11. In the illustrated example, the semiconductor laser light sources 131, 21, 132, 22, 133, and 134 are arranged in this order in the Y-axis direction. The semiconductor laser light sources 131, 132, 133, and 134 emit light in a first direction D1. The optical axis of the light L1 emitted from the first semiconductor laser light source 21, the optical axis of the light L2 emitted from the second semiconductor laser light source 22, the optical axis of the light emitted from the semiconductor laser light source 131, the optical axis of the light emitted from the semiconductor laser light source 132, the optical axis of the light emitted from the semiconductor laser light source 133, and the optical axis of the light emitted from the semiconductor laser light source 134 are parallel to one another.

[0140] The semiconductor laser light sources 21 and 131 emit light of the same wavelength. The semiconductor laser light sources 22 and 132 emit light of the same wavelength. The semiconductor laser light sources 133 and 134 emit light of the same wavelength. The semiconductor laser light sources 21, 22, and 133 emit light of different wavelengths. Although not shown, the semiconductor laser light sources 21, 22, 131, 132, 133, and 134 may be provided on the first substrate 11 via a position adjustment mechanism 70.

[0141] The semiconductor laser light sources 21, 22, and 134 emit light of a first polarization. The semiconductor laser light sources 21, 22, and 134 emit, for example, P-polarized light. The semiconductor laser light sources 131, 132, and 133 emit light of a second polarization different from the first polarization. The semiconductor laser light sources 131, 132, and 133 emit, for example, S-polarized light. The semiconductor laser light sources 131, 132, 133, and 134 are, for example, PCSELs.

[0142] Light emitted from the semiconductor laser light source 131 is focused at a position S1 on the optical path from the semiconductor laser light source 131 to the mirror 141. The optical path length from the semiconductor laser light source 131 to the position S1 is longer than the optical path length from the first semiconductor laser light source 21 to the first position P1.

[0143] The light emitted from the semiconductor laser light source 132 is focused at position S2 on the optical path from the semiconductor laser light source 132 to the mirror 142. The optical path length from the semiconductor laser light source 132 to position S2 is shorter than the optical path length from the first semiconductor laser light source 21 to the first position P1 and longer than the optical path length from the second semiconductor laser light source 22 to the second position P2.

[0144] The light emitted from the semiconductor laser light source 133 is focused at a position S3 on the optical path from the semiconductor laser light source 133 to the mirror 143. The optical path length from the semiconductor laser light source 133 to the position S3 is shorter than the optical path length from the second semiconductor laser light source 22 to the second position P2.

[0145] The light emitted from the semiconductor laser light source 134 is collected at a position S4 on the optical path from the semiconductor laser light source 134 to the mirror 144. The optical path length from the semiconductor laser light source 134 to the position S4 is shorter than the optical path length from the semiconductor laser light source 133 to the position S3.

[0146] The mirror 141 reflects the light emitted from the semiconductor laser light source 131 in the first direction D1 in the second direction D2.

[0147] The mirror 142 reflects the light emitted from the first semiconductor laser light source 21 in the first direction D1. The mirror 142 transmits the light in the direction D1 and reflects the light reflected by the mirror 141 in the first direction D1. The mirror 142 is a polarization beam combiner.

[0148] The mirror 143 reflects the light emitted from the semiconductor laser light source 132 in the first direction D1 in the second direction D2.

[0149] The mirror 144 transmits the light emitted in the first direction D1 from the second semiconductor laser light source 22 in the first direction D1, and reflects the light reflected by the mirror 143 in the first direction D1. The mirror 144 is a polarization beam combiner.

[0150] The mirror 145 reflects the light emitted from the semiconductor laser light source 133 in the first direction D1 in the second direction D2.

[0151] Mirror 146 transmits light emitted in first direction D1 from semiconductor laser light source 134 in first direction D1, and reflects light reflected by mirror 145 in first direction D1. Mirror 146 is a polarization beam combiner.

[0152] The first mirror 31 reflects the light from the mirror 142 in the second direction D2.

[0153] The second mirror 32 transmits the light from the first mirror 31 in the second direction D2, and reflects the light from the mirror 144 in the second direction D2. The second mirror 32 is a dichroic mirror.

[0154] The mirror 147 transmits the light from the second mirror 32 in the second direction D2, and reflects the light from the mirror 146 in the second direction D2. The mirror 147 is a dichroic mirror.

[0155] The light-collecting optical system 40 collects the light emitted from the semiconductor laser light sources 21, 22, 131, 132, 133, and 134. Therefore, the laser module 600 can achieve higher output power than the laser module 100, for example.

[0156] 14, a λ / 2 plate 30 is provided in the optical path from the first semiconductor laser light source 21 to the mirror 142, the optical path from the second semiconductor laser light source 22 to the mirror 144, and the optical path from the semiconductor laser light source 134 to the mirror 146. This allows the light emitted from the semiconductor laser light sources 21, 22, 134 to be converted, for example, from S-polarized light to P-polarized light.

[0157] Furthermore, the number of semiconductor laser light sources and the number of mirrors are not particularly limited.

[0158] 3. Laser processing machine Next, the laser processing machine according to this embodiment will be described with reference to the drawings. Fig. 15 is a diagram showing a schematic diagram of a laser processing machine 900 according to this embodiment.

[0159] As shown in FIG. 15, the laser processing machine 900 includes, for example, a laser module 100, an optical fiber 910, and a processing head 920.

[0160] The light emitted from the laser module 100 passes through an optical fiber 910 and is guided to a processing head 920 .

[0161] The laser processing machine 900 processes a workpiece W. Specifically, in the laser processing machine 900, a processing head 920 is moved relative to the workpiece W, and light is irradiated from the processing head 920 to process the workpiece W. The processing head 920 has lenses 922 and 924. The lenses 922 and 924 collect light emitted from the optical fiber 910 and guide it to the workpiece W. The material of the workpiece W is not particularly limited and may be metal, resin, or ceramic. Although not shown, the laser processing machine 900 may not include the optical fiber 910, and the laser module 100 may be incorporated into the processing head 920.

[0162] The use of the laser processing machine according to the present invention is not particularly limited. The laser processing machine according to the present invention may be a processing machine for cutting a workpiece W or drilling holes in the workpiece W. The laser processing machine according to the present invention may also be, for example, a laser cleaner that removes rust and the like from metal using laser light, a laser annealing device that heats the surface of metal or resin using laser light, or a 3D printer.

[0163] Furthermore, the laser processing machine according to the present invention may include a laser module other than the laser module 100 as long as it is a laser module according to the present invention.

[0164] The above-described embodiment and modifications are merely examples, and the present invention is not limited to these. For example, the embodiments and modifications can be combined as appropriate.

[0165] The present invention includes configurations that are substantially the same as the configurations described in the embodiments, for example, configurations with the same functions, methods, and results, or configurations with the same purpose and effects. The present invention also includes configurations that replace non-essential parts of the configurations described in the embodiments. The present invention also includes configurations that achieve the same effects or purposes as the configurations described in the embodiments. The present invention also includes configurations that add publicly known technology to the configurations described in the embodiments.

[0166] The following can be derived from the above-described embodiment and modifications.

[0167] One aspect of the laser module is a first substrate; a first semiconductor laser light source provided on the first substrate and emitting a first light in a first direction; a second semiconductor laser light source provided on the first substrate and configured to emit second light in the first direction; a first mirror that reflects the first light emitted in the first direction from the first semiconductor laser light source; a second mirror that transmits the first light reflected by the first mirror in a second direction different from the first direction and reflects the second light emitted from the second semiconductor laser light source in the second direction; a focusing optical system that focuses the first light and the second light from the second mirror; Including, the first light emitted from the first semiconductor laser light source is collected at a first position on an optical path from the first semiconductor laser light source to the first mirror, the second light emitted from the second semiconductor laser light source is collected at a second position on an optical path from the second semiconductor laser light source to the second mirror, an optical path length from the first semiconductor laser light source to the first position is longer than an optical path length from the second semiconductor laser light source to the second position; The optical path length from the first semiconductor laser light source to the focusing optical system is The optical path length from the laser light source to the focusing optical system is longer than the optical path length.

[0168] According to this laser module, the positions of the first semiconductor laser light source and the second semiconductor laser light source can be easily adjusted.

[0169] In one embodiment of the laser module, the first light and the second light are incident on the second mirror as light beams having different polarization directions; The second mirror may be a polarizing beam combiner.

[0170] According to this laser module, the first light and the second light can be multiplexed at the second mirror.

[0171] In one embodiment of the laser module, the first light and the second light have different wavelengths, The second mirror may be a dichroic mirror.

[0172] According to this laser module, the first light and the second light can be multiplexed at the second mirror.

[0173] In one embodiment of the laser module, The first semiconductor laser light source and the second semiconductor laser light source may be provided on a first plane of the first substrate.

[0174] According to this laser module, the temperature characteristics of the first semiconductor laser light source and the temperature characteristics of the second semiconductor laser light source can be more uniform.

[0175] In one embodiment of the laser module, a second substrate provided opposite to the first substrate; a third semiconductor laser light source provided on the second substrate and configured to emit third light in a third direction opposite to the first direction; a fourth semiconductor laser light source provided on the second substrate and configured to emit fourth light in the third direction; a third mirror that reflects the third light emitted from the third semiconductor laser light source in the third direction; a fourth mirror that transmits the third light reflected by the third mirror in the second direction and reflects the fourth light emitted from the fourth semiconductor laser light source in the second direction; a fifth mirror that is provided on an optical path from the second mirror to the focusing optical system, and that reflects the first light and the second light from the second mirror in the second direction and transmits the third light and the fourth light from the fourth mirror in the second direction; Including, The focusing optical system may focus the first light, the second light, the third light, and the fourth light from the fifth mirror.

[0176] This laser module can achieve high output.

[0177] In one embodiment of the laser module, the first light and the second light are incident on the fifth mirror as light of a first polarization, the third light and the fourth light are incident on the fifth mirror as light of a second polarization different from the first polarization, The fifth mirror may be a polarizing beam combiner.

[0178] This laser module can multiplex the first light, the second light, the third light, and the fourth light.

[0179] In one embodiment of the laser module, the first light and the second light are light of a first wavelength, the third light and the fourth light are light of a second wavelength different from the first wavelength, The fifth mirror may be a dichroic mirror.

[0180] This laser module can multiplex the first light, the second light, the third light, and the fourth light.

[0181] In one embodiment of the laser module, The third semiconductor laser light source and the fourth semiconductor laser light source may be provided on a second plane of the second substrate.

[0182] According to this laser module, the temperature characteristics of the third semiconductor laser light source and the temperature characteristics of the fourth semiconductor laser light source can be more uniform.

[0183] In one embodiment of the laser module, The first semiconductor laser light source and the second semiconductor laser light source may have emission surfaces at different positions in the first direction.

[0184] This laser module allows correction of chromatic aberration in the focusing optical system.

[0185] In one embodiment of the laser module, The first semiconductor laser light source and the second semiconductor laser light source may be photonic crystal surface emitting lasers.

[0186] The laser module allows adjustment of the first position and the second position.

[0187] One aspect of the laser processing machine is Includes laser module. [Explanation of symbols]

[0188] DESCRIPTION OF SYMBOLS 11...first substrate, 11a...first plane, 12...second substrate, 12a...second plane, 13, 14...substrate, 21...first semiconductor laser light source, 21a...exit surface, 22...second semiconductor laser light source, 22a...exit surface, 23...third semiconductor laser light source, 23a...exit surface, 24...fourth semiconductor laser light source, 24a...exit surface, 30...λ / 2 plate, 31...first mirror, 32...second mirror, 33...third mirror, 34...fourth mirror, 35...fifth mirror, 36, 37, 38...mirrors, 40...focusing optical system, 50...casing, 61...first semiconductor layer, 62...first guide layer, 63...quantum well layer, 64...second guide layer, 65...second semiconductor layer, 66...transparent substrate, 67...first electrode , 68... second electrode, 68a... through hole, 69... opening, 70... position adjustment mechanism, 72... adjustment screw, 74... washer, 76... spring, 78... thermal conductive paste, 81, 82... semiconductor laser light source, 91, 92, 93, 94, 95, 96... mirror, 100... laser module, 101, 102, 103, 104, 105, 106, 107, 108... semiconductor laser light source, 111, 112, 113, 114, 115, 116, 117, 118, 121, 122, 123, 124... mirror, 131, 132, 133, 134... semiconductor laser light source, 141, 142, 143, 144, 145, 146, 147... mirror, 200, 300, 400, 500, 600...Laser module, 900...Laser processing machine, 910...Optical fiber, 920...Processing head, 922, 924...Lens

Claims

1. a first substrate; a first semiconductor laser light source provided on the first substrate and configured to emit a first light in a first direction; a second semiconductor laser light source provided on the first substrate and configured to emit second light in the first direction; a first mirror that reflects the first light emitted in the first direction from the first semiconductor laser light source; a second mirror that transmits the first light reflected by the first mirror in a second direction different from the first direction and reflects the second light emitted from the second semiconductor laser light source in the second direction; a focusing optical system that focuses the first light and the second light from the second mirror; Including, the first light emitted from the first semiconductor laser light source is collected at a first position on an optical path from the first semiconductor laser light source to the first mirror, the second light emitted from the second semiconductor laser light source is collected at a second position on an optical path from the second semiconductor laser light source to the second mirror, an optical path length from the first semiconductor laser light source to the first position is longer than an optical path length from the second semiconductor laser light source to the second position; a light path length from the first semiconductor laser light source to the focusing optical system being longer than a light path length from the second semiconductor laser light source to the focusing optical system;

2. In claim 1, the first light and the second light are incident on the second mirror as light beams having different polarization directions; The laser module, wherein the second mirror is a polarization beam combiner.

3. In claim 1, the first light and the second light have different wavelengths, The laser module, wherein the second mirror is a dichroic mirror.

4. In claim 1, The first semiconductor laser light source and the second semiconductor laser light source are provided on a first plane of the first substrate.

5. In claim 1, a second substrate provided opposite to the first substrate; a third semiconductor laser light source provided on the second substrate and configured to emit third light in a third direction opposite to the first direction; a fourth semiconductor laser light source provided on the second substrate and configured to emit fourth light in the third direction; a third mirror that reflects the third light emitted in the third direction from the third semiconductor laser light source; a fourth mirror that transmits the third light reflected by the third mirror in the second direction and reflects the fourth light emitted from the fourth semiconductor laser light source in the second direction; a fifth mirror that is provided on an optical path from the second mirror to the focusing optical system, and that reflects the first light and the second light from the second mirror in the second direction and transmits the third light and the fourth light from the fourth mirror in the second direction; Including, The focusing optical system focuses the first light, the second light, the third light, and the and a laser module for focusing the fourth light.

6. In claim 5, the first light and the second light are incident on the fifth mirror as light of a first polarization, the third light and the fourth light are incident on the fifth mirror as light of a second polarization different from the first polarization, The laser module, wherein the fifth mirror is a polarization beam combiner.

7. In claim 5, the first light and the second light are light of a first wavelength, the third light and the fourth light are light of a second wavelength different from the first wavelength, The laser module, wherein the fifth mirror is a dichroic mirror.

8. In claim 5, The third semiconductor laser light source and the fourth semiconductor laser light source are provided on a second plane of the second substrate.

9. In claim 3, a laser module in which the first semiconductor laser light source and the second semiconductor laser light source have emission surfaces positioned differently in the first direction;

10. In claim 1, A laser module, wherein the first semiconductor laser light source and the second semiconductor laser light source are photonic crystal surface-emitting lasers.

11. A laser processing machine comprising the laser module according to any one of claims 1 to 10.

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