Charged particle beam irradiation apparatus, charged particle beam irradiation method, and program

Abstract

To provide a charged particle beam irradiation device, a charged particle beam irradiation method, and a program capable of relaxing the limitation of a deflection voltage generator which can be mounted.SOLUTION: The charged particle beam irradiation apparatus includes a plurality of deflection voltage generators, a reading unit, and a comparison unit. The plurality of deflecting voltage generators generate deflecting voltages applied to a plurality of electrodes of a deflector that deflects a charged particle beam, and each of the plurality of deflecting voltage generators includes a storage unit in which individual information of a corresponding deflecting voltage generator is stored. The reading unit reads individual information of at least two deflecting voltage generators among the plurality of deflecting voltage generators. The comparison unit compares the pieces of individual information read by the reading unit with each other.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] The present invention relates to a charged particle beam irradiation device, a charged particle beam irradiation method, and a program. [Background technology]

[0002] In conventional electron beam lithography systems, the type of DAC (Digital to Analog Converter) amplifier unit that can be installed is specified for each group, such as a main deflector or sub-deflector, and only DAC amplifier units of the same type are installed in each group. Furthermore, conventionally, when a DAC amplifier unit is replaced, a procedure has been followed in which a computer executes a command for the DAC amplifier unit to confirm that no unspecified DAC amplifier units are installed. Specifically, for example, the computer acquires individual information indicating the type of the DAC amplifier unit from the DAC amplifier unit, and if the type indicated in this acquired individual information is not the specified type, the computer displays on a display that a DAC amplifier unit of an unspecified type has been installed, alerting the user.

[0003] Since the device itself has a long lifespan, new models of DAC amplifier units are developed to accommodate EOL (End of Life).These new models may not have the same characteristics as the previous models due to improvements to the problems with the previous models or the characteristics of alternative parts.

[0004] As new types of products are developed, if the types of DAC amplifier units that can be installed in each device were standardized for all DAC amplifier units that are connected, as has been done until now, the types of DAC amplifier units that can be installed would be limited, and operating costs and management costs would increase. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2000-173522 Summary of the Invention [Problem to be solved by the invention]

[0006] An object of the present invention is to provide a charged particle beam irradiation device, a charged particle beam irradiation method, and a program that can alleviate the restrictions on the deflection voltage generator that can be installed. [Means for solving the problem]

[0007] A charged particle beam irradiation device according to one aspect of the present invention comprises a plurality of deflection voltage generators that generate deflection voltages to be applied to a plurality of electrodes of a deflector that deflects a charged particle beam, each of the plurality of deflection voltage generators having a memory unit in which individual information of the corresponding deflection voltage generator is stored, a reading unit that reads the individual information of at least two of the plurality of deflection voltage generators, and a comparison unit that compares the individual information read by the reading units.

[0008] The above-mentioned charged particle beam irradiation device may further include a notification unit that notifies that the criteria are not met when a comparison result between the individual information of a specific combination of deflection voltage generators among the at least two deflection voltage generators does not meet the criteria.

[0009] The above-mentioned charged particle beam irradiation device may further include an irradiation control unit that controls the irradiation of the charged particle beam by the charged particle beam irradiation device, and the irradiation control unit may prohibit the irradiation of the charged particle beam when a comparison result between individual information for a specific combination of deflection voltage generators among at least two deflection voltage generators does not satisfy a criterion.

[0010] In the above-described charged particle beam irradiation device, the specific combination of deflection voltage generators may be at least one pair of deflection voltage generators that apply a deflection voltage to electrodes facing each other.

[0011] The above-mentioned charged particle beam irradiation device may further include a terminal device that accepts an input operation to specify a specific combination of deflection voltage generators, and the comparison unit may read individual information of the deflection voltage generators specified by the input operation and compare them with each other.

[0012] The above-mentioned charged particle beam irradiation device may be connected via a network to a server that stores at least information for comparison, and the comparison unit may make the comparison using the information for comparison.

[0013] A charged particle beam irradiation method according to one aspect of the present invention includes a step of reading individual information of at least two of a plurality of deflection voltage generators that generate deflection voltages to be applied to a plurality of electrodes of a deflector that deflects a charged particle beam, the deflection voltage generators each having a memory unit in which individual information of the corresponding deflection voltage generator is stored, and a step of comparing the read individual information with each other.

[0014] A program according to one aspect of the present invention causes a computer to execute the following steps: reading individual information of at least two of a plurality of deflection voltage generators that generate deflection voltages to be applied to a plurality of electrodes of a deflector that deflects a charged particle beam, the plurality of deflection voltage generators each having a memory unit in which individual information of the corresponding deflection voltage generator is stored; and comparing the read individual information with each other. [Effects of the Invention]

[0015] According to the present invention, it is possible to alleviate the restrictions on the deflection voltage generator that can be installed while maintaining the drawing performance. [Brief explanation of the drawings]

[0016] [Figure 1] 1 is a diagram showing an example of the configuration of an electron beam drawing apparatus according to an embodiment of the present invention; [Figure 2] 1 is an explanatory diagram for explaining a drawing process by the electron beam drawing apparatus according to the present embodiment; [Figure 3]FIG. 2 is a diagram showing a DAC amplifier unit in the electron beam writing apparatus according to the present embodiment. [Figure 4] 10 is a diagram showing individual information of a DAC amplifier unit in the electron beam drawing apparatus according to the present embodiment. FIG. [Figure 5] 10 is a flowchart showing an example of the operation of the electron beam drawing apparatus according to the present embodiment. [Figure 6] 10 is an explanatory diagram for explaining a specific combination of DAC amplifier units in an operation example of the electron beam drawing apparatus according to the present embodiment. FIG. [Figure 7] FIG. 1 is a diagram showing an electron beam drawing apparatus according to a first modified example of the present embodiment. [Figure 8] FIG. 10 is a diagram showing an electron beam drawing apparatus according to a second modified example of the present embodiment. [Figure 9] FIG. 10 is a diagram showing an electron beam drawing apparatus according to a third modified example of the present embodiment. [Figure 10] FIG. 10 is a diagram showing an electron beam drawing apparatus according to a fourth modified example of the present embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0017] Hereinafter, embodiments of the present invention will be described with reference to the drawings. The present invention is not limited to these embodiments. Furthermore, in the drawings referred to in the embodiments, identical parts or parts having similar functions are denoted by the same or similar reference numerals, and repeated description thereof will be omitted. Below, an electron beam lithography system will be described as an example of a charged particle beam irradiation system. However, the charged particle beam irradiation system is not limited to an electron beam lithography system, and may be, for example, a pattern inspection system that inspects defects in a pattern formed on a sample by an electron beam lithography system. Furthermore, the charged particle beam is not limited to an electron beam, and may be an ion beam or the like.

[0018] FIG. 1 is a diagram showing an example of the configuration of an electron beam lithography apparatus 1 according to this embodiment. As shown in FIG. 1, the electron beam lithography apparatus 1 includes a lithography unit 100 and a control unit 200. First, the configuration of the lithography unit 100 will be described. The lithography unit 100 includes an electron lens barrel 102. An illumination lens 114 is disposed within the electron lens barrel 102. The illumination lens 114 irradiates the electron beam 112 emitted from the electron gun 110 onto a first shaping aperture 120.

[0019] A blanking (BLK) deflector 116 and a BLK aperture 118 are disposed between the illumination lens 114 and the first shaping aperture 120. The BLK deflector 116 deflects the electron beam 112 when blanking is ON (i.e., during a non-drawing period), and the deflected electron beam 112 is cut by the BLK aperture 118. The BLK deflector 116 can be configured, for example, by a pair of electrodes (i.e., two electrodes).

[0020] The first shaping aperture 120 has a rectangular opening. The first shaping aperture 120 transmits the electron beam 112 through the opening, thereby shaping the cross section of the electron beam 112 into a rectangular shape. The projection lens 122 projects the electron beam 112 shaped by the first shaping aperture 120 onto the second shaping aperture 126.

[0021] A shaping deflector 124 is disposed between the second shaping aperture 126 and the first shaping aperture 120, and is concentric with the electron column 102. The shaping deflector 124 controls the position of the image of the first shaping aperture on the second shaping aperture 126. This control changes the degree of overlap between the image of the first shaping aperture and the opening of the second shaping aperture 126, and therefore the shape and dimensions of the electron beam 112 can be controlled.

[0022] An objective lens 128 is disposed on the transmission side of the second shaping aperture 126. The objective lens 128 focuses the electron beam 112, which has passed through the second shaping aperture 126, on the surface of a sample 142 in the pattern writing chamber 104. The sample 142 is placed on an XY stage 140 that moves continuously in the X and Y directions in the pattern writing chamber 104. The XY stage 140 is driven by a drive circuit 244, and its position is measured by a laser length meter 242.

[0023] The sample 142 is, for example, a reticle in which a light-shielding film such as a chromium film and a resist film are laminated on a glass substrate.

[0024] A main deflector 130 and a sub-deflector 132 are arranged concentrically with the electron column 102 between the sample 142 and the second shaping aperture 126. The main deflector 130 and the sub-deflector 132 determine the irradiation position of the electron beam 112 on the sample 142.

[0025] When drawing using the electron beam drawing apparatus 1, as shown in Fig. 2, a pattern 11 to be drawn on a sample 142 is divided into rectangular frame regions 12. Then, drawing is performed on each frame region 12 while the XY stage 140 is continuously moved in the X direction by the drive circuit 244. The frame regions 12 are further divided into subfield regions 13. The electron beam 112 shaped by the first and second shaping apertures 120 and 126 is deflected onto a necessary portion of each subfield region 13, and drawing is performed.

[0026] A two-stage objective deflector consisting of a main deflector 130 and a sub-deflector 132 is used to deflect the electron beam 112. The main deflector 130 determines the position of the sub-field region 13. The sub-deflector 132 determines the position of the pattern drawing position within the sub-field region 13.

[0027] Next, a description will be given of the configuration of the control unit 200. The control unit 200 includes a control computer 202 that performs various controls of the electron beam drawing apparatus 1.

[0028] A storage device 204 is connected to the control computer 202. A plurality of pattern data are stored in the storage device 204. Here, the pattern data is digital data describing the pattern shape, pattern position, etc. A program for controlling the electron beam lithography apparatus 1 is stored in the storage device 204 in a state that can be read by the control computer 202. The control computer 202 controls the electron beam lithography apparatus 1 by reading and executing the program stored in the storage device 204.

[0029] A drawing data generation circuit 206 is connected to the control computer 202. A black deflection control circuit 210, a shaping deflection control circuit 220, and a position deflection control circuit 230 are connected to the drawing data generation circuit 206.

[0030] The writing data generation circuit 206 receives pattern data from the control computer 202. The writing data generation circuit 206 performs processes such as distribution and expansion on the received pattern data to generate writing data for each shot. The writing data generation circuit 206 transmits the generated writing data for each shot to each deflection control circuit 210, 220, and 230. Each deflection control circuit 210, 220, and 230 generates digital data for controlling the deflectors based on the writing data received from the writing data generation circuit 206.

[0031] The BLK deflection control circuit 210 is a circuit that controls blanking ON (non-drawing period) and blanking OFF (drawing period). The BLK deflection control circuit 210 acquires time width information for blanking ON and blanking OFF included in the drawing data received from the drawing data generation circuit 206. The BLK deflection control circuit 210 generates a timing pulse signal based on the acquired time width information. The BLK deflection control circuit 210 transmits the generated timing pulse signal to the BLK amplifier unit 212. The BLK amplifier unit 212 amplifies the timing pulse signal received from the BLK deflection control circuit 210 until it has an amplitude sufficient to drive the BLK deflector 116. The BLK amplifier unit 212 transmits the amplified timing pulse signal to the BLK deflector 116.

[0032] The shaping deflection control circuit 220 controls the beam shape and size. The shaping deflection control circuit 220 transmits a plurality of digital data for controlling the shaping deflector 124 to a plurality of DAC amplifier units 222 in synchronization with each other. The plurality of digital data are instruction voltage signals transmitted to a plurality of electrodes (described below) that constitute the shaping deflector 124. Each DAC amplifier unit 222 provided corresponding to each electrode performs digital-to-analog conversion of the digital data received from the shaping deflection control circuit 220 and amplifies this digital-to-analog converted analog data. Each DAC amplifier unit 222 then transmits the amplified analog data to the corresponding electrode of the shaping deflector 124, thereby applying a deflection voltage.

[0033] The position deflection control circuit 230 controls the beam irradiation position on the sample. The position deflection control circuit 230 transmits a plurality of digital data for controlling the main deflector 130 and the sub-deflector 132 to a plurality of DAC amplifier units 232, 240 in synchronization with each other. The plurality of digital data are instruction voltage signals (i.e., digital signals) transmitted to a plurality of electrodes (described later) constituting the main deflector 130 and the sub-deflector 132. Each of the DAC amplifier units 232, 240 provided corresponding to each electrode converts the digital data received from the position deflection control circuit 230 into digital data and amplifies the converted analog data. Each of the DAC amplifier units 232, 240 then transmits the amplified analog data to the corresponding electrodes of the main deflector 130 and the sub-deflector 132, thereby applying a deflection voltage.

[0034] Here, the above-mentioned shaping deflector 122, main deflector 130, and sub-deflector 132 can be configured, for example, by electrostatic deflectors having eight electrodes (i.e., four pairs of opposing electrodes). Of these, the main deflector 130 having an eight-pole electrostatic deflector will be described with reference to FIG. 3. FIG. 3 is a diagram showing the eight-pole main deflector 130 and eight DAC amplifier units 232a to 232h that apply analog data to each electrode. In this embodiment, the DAC amplifier units 232a to 232h configure a plurality of deflection voltage generators.

[0035] 3, the main deflector 130 has eight electrodes 130a to 130h. The DAC amplifier units 232a to 232h apply analog voltages (that is, deflection voltages) to the corresponding electrodes 130a to 130h connected thereto.

[0036] Hereinafter, the DAC amplifier unit 232a corresponding to (i.e., connected to) electrode 130a will also be referred to as the first DAC amplifier unit 232a. The DAC amplifier unit 232b corresponding to electrode 130b adjacent to electrode 130a in the clockwise direction of FIG. 3 will also be referred to as the second DAC amplifier unit 232b. The DAC amplifier unit 232c corresponding to electrode 130c adjacent to electrode 130b in the clockwise direction of FIG. 3 will also be referred to as the third DAC amplifier unit 232c. The DAC amplifier unit 232d corresponding to electrode 130d adjacent to electrode 130c in the clockwise direction of FIG. 3 will also be referred to as the fourth DAC amplifier unit 232d.

[0037] The DAC amplifier unit 232e corresponding to the electrode 130e adjacent to the electrode 130d in the clockwise direction of FIG. 3 is also referred to as the fifth DAC amplifier unit 232e. The fifth DAC amplifier unit 232e and the first DAC amplifier unit 232a apply voltages to the opposing electrodes 130a and 130e. The DAC amplifier unit 232f corresponding to the electrode 130f adjacent to the electrode 130e in the clockwise direction of FIG. 3 is also referred to as the sixth DAC amplifier unit 232f. The sixth DAC amplifier unit 232f and the second DAC amplifier unit 232b apply voltages to the opposing electrodes 130b and 130f. The DAC amplifier unit 232g corresponding to the electrode 130g adjacent to the electrode 130f in the clockwise direction of FIG. 3 is also referred to as the seventh DAC amplifier unit 232g. The seventh DAC amplifier unit 232g and the third DAC amplifier unit 232c apply voltages to the electrodes 130c and 130g that face each other. The DAC amplifier unit 232h that corresponds to the electrode 130h that is adjacent to the electrode 130g in the clockwise direction in FIG. 3 is also referred to as the eighth DAC amplifier unit 232h. The eighth DAC amplifier unit 232h and the fourth DAC amplifier unit 232d apply voltages to the electrodes 130d and 130h that face each other.

[0038] When the position deflection control circuit 230 transmits digital data for controlling the electrodes 130a-130h to the first to eighth DAC amplifier units 232a-232h, analog voltages are applied from the DAC amplifier units 232a-232h to the electrodes 130a-130h, respectively. This allows the main deflector 130 to position the subfield region 13 with high precision.

[0039] 3 shows the main deflector 130 configured with four pairs (eight electrodes), but the main deflector 130 may be configured with, for example, two pairs (four electrodes), or more electrode pairs. Similarly, the shaping deflector 124 and the sub-deflector 132 may be configured with, for example, two pairs (four electrodes), or more electrode pairs. Also, in order to simplify the illustration, FIG. 1 shows only one pair (two) of electrodes for each of the shaping deflector 124, the main deflector 130, and the sub-deflector 132.

[0040] The first to eighth DAC amplifier units 232a to 232h each have a storage unit in which individual information is stored. In the example shown in Figures 3 and 4, the storage unit of each DAC amplifier unit 232a to 232h is configured with non-volatile, i.e., non-transitory, storage media 233a to 233h. The storage media 233a to 233h may be, for example, a semiconductor memory such as a mask ROM, a programmable ROM (RROM), an erasable programmable read-only memory (EPROM), an electrically erasable programmable read-only memory (EEPROM), or a flash memory. In the example shown in Figure 4, the storage media 233a to 233h of each DAC amplifier unit 232a to 232h stores the model (model A, model B, etc.) of each DAC amplifier unit 232a to 232h as individual information i1 to i8 of each DAC amplifier unit 232a to 232h. The individual information of the DAC amplifier unit may be information that includes not only the model but also revision information that indicates detailed functional revisions within the model (for example, model A01, model A02, model A03, etc.). Furthermore, this individual information may include information on the electrical characteristics and performance of the DAC amplifier unit. Individual information i1 to i8 is stored in storage media 233a to 233h in a state that can be read by the control computer 202.

[0041] As shown in FIG. 4, by storing the individual information i1 to i8 directly in each of the DAC amplifier units 232a to 232h, it is possible to easily and appropriately compare the individual information i1 to i8 between specific DAC amplifier units 232a to 232h.

[0042] As shown in FIG. 3 , the control computer 202 has a reading unit 3, a comparison unit 4, an irradiation control unit 5, and a notification unit 6. Each of the components 3, 4, 5, and 6 of the control computer 202 may be configured with hardware such as an electric circuit, or may be configured with software. When configured with software, for example, a program for realizing the functions of each of the components 3, 4, 5, and 6 is stored in a storage medium in a state readable by the control computer 202. The control computer 202 then reads and executes the program from the storage medium to realize the functions of each of the components 3, 4, 5, and 6. The storage medium for storing the program may be a removable storage medium such as a magnetic disk or optical disk, or may be a fixed storage medium such as a hard disk drive or memory.

[0043] The reading unit 3 reads the individual information i1 to i8 of at least two of the first to eighth DAC amplifier units 232a to 232h from the storage media 233a to 233h. The "at least two" DAC amplifier units 232a to 232h may be all of the DAC amplifier units 232a to 232h, or may be two or more of the DAC amplifier units 232a to 232h. The two or more DAC amplifier units 232a to 232h may be newly installed by replacement work, or DAC amplifier units 232a to 232h that have a specific combination relationship (described later) with the newly installed DAC amplifier units 232a to 232h.

[0044] The comparison unit 4 compares the individual information i1 to i8 read by the reading unit 3 and outputs the comparison result. The comparison result is whether the compared individual information i1 to i8 match each other. Furthermore, if the individual information is information about the electrical characteristics or performance of the DAC amplifier unit, the comparison result is, for example, whether the compared individual information i1 to i8 have the same electrical characteristics (performance) or whether the characteristics (performance) fall within a predetermined range.

[0045] The irradiation control unit 5 controls the irradiation of the electron beam 112 by the electron beam lithography apparatus 1. For example, the irradiation control unit 5 controls the emission of the electron beam 112 by the electron gun 110, thereby controlling the irradiation of the electron beam 112 by the electron beam lithography apparatus 1. The irradiation control unit 5 may further control the irradiation of the electron beam 112 by the electron beam lithography apparatus 1 by controlling the generation of deflection voltages by the first to eighth DAC amplifier units 232a to 232h.

[0046] When the comparison result between the individual information i1 to i8 for a specific combination of the DAC amplifier units 232a to 232h among at least two DAC amplifier units 232a to 232h does not satisfy the criteria, the irradiation control unit 5 prohibits the electron beam lithography apparatus 1 from irradiating the electron beam 112. For example, the irradiation control unit 5 prohibits the electron gun 110 from emitting the electron beam 112, thereby prohibiting the electron beam lithography apparatus 1 from irradiating the electron beam 112.

[0047] When prohibiting the irradiation of the electron beam 112, the irradiation control unit 5 may further prohibit the DAC amplifier units 232a-232h from generating deflection voltages. In this case, the irradiation control unit 5 may prohibit the position deflection control circuit 230 from controlling the DAC amplifier units 232a-232h (i.e., from transmitting digital data for controlling the electrodes 130a-130h to the DAC amplifier units 232a-232h), thereby prohibiting the DAC amplifier units 232a-232h from generating deflection voltages.

[0048] The specific combination of DAC amplifier units 232a-232h is, for example, at least one pair of DAC amplifier units 232a-232h that apply a deflection voltage to the electrodes 130a-130h facing each other. In this case, the specific combination of DAC amplifier units is at least one of the following combinations: the first DAC amplifier unit 232a and the fifth DAC amplifier unit 232e, the second DAC amplifier unit 232b and the sixth DAC amplifier unit 232f, the third DAC amplifier unit 232c and the seventh DAC amplifier unit 232g, and the fourth DAC amplifier unit 232d and the eighth DAC amplifier unit 232h. By limiting the DAC amplifier units 232a-232h to specific combinations rather than all DAC amplifier units 232a-232h and requiring them to satisfy the criteria, the restrictions (i.e., conditions) on the DAC amplifier units 232a-232h that can be installed in the electron beam drawing apparatus 1 can be relaxed.

[0049] The criterion is, for example, that the individual information i1 to i8 compared by the comparison unit 4 match each other. The criterion may also include a case where the individual information i1 to i8 compared by the comparison unit 4 do not strictly match each other, but the electrical characteristics (i.e., voltage characteristics) of the DAC amplifier units are considered to be identical in a corresponding relationship. For example, if the electrical characteristics are considered to be identical if the models are the same, the corresponding relationship may be a relationship in which the models are the same but only the revision information is different.

[0050] If the comparison result of the individual information i1 to i8 for a specific combination of DAC amplifier units 232a to 232h does not satisfy the criteria, the notification unit 6 notifies (warns or guides) the user that the criteria are not satisfied. The specific manner in which the notification (warns or guides) is output is not particularly limited, and may be, for example, the output of visual information such as the display of an image on a display or the lighting of a lamp, or may be an audio output.

[0051] An example of the operation of the electron beam lithography apparatus 1 having the above-described configuration will now be described. As shown in Fig. 5, first, the reading unit 3 of the control computer 202 reads the individual information i1 to i8 from the storage media 233a to 233h of at least two of the first to eighth DAC amplifier units 232a to 232h mounted on the electron beam lithography apparatus 1 (step S1). The reading unit 3 reads the individual information i1 to i8 at a predetermined timing, for example, when the electron beam lithography apparatus 1 is started up, before lithography, or when replacement is detected.

[0052] After the individual information i1 to i8 is read by the reading unit 3, the comparing unit 4 compares the read individual information i1 to i8 (step S2). The comparing unit 4 outputs a comparison result indicating, for example, whether the compared individual information i1 to i8 match each other.

[0053] After the individual information i1 to i8 are compared, the irradiation control unit 5 determines whether the comparison result of the individual information i1 to i8 by the comparison unit 4 for the specific combination of DAC amplifier units 232a to 232h satisfies a criterion (step S3).

[0054] 6(a), the irradiation control unit 5 may determine whether the comparison result of the individual information i3 and i7 for the combination of the third DAC amplifier unit 232c and the seventh DAC amplifier unit 232g corresponding to the opposing electrodes 130c and 130g, respectively, satisfies a criterion. The third DAC amplifier unit 232c or the seventh DAC amplifier unit 232g may be a DAC amplifier unit newly installed in the electron beam drawing apparatus 1 by replacement work.

[0055] 6(b), the irradiation control unit 5 may determine whether the comparison results of the individual information i1, i3, i5, and i7 for four combinations of the third DAC amplifier unit 232c, the seventh DAC amplifier unit 232g, the first DAC amplifier unit 232a, and the fifth DAC amplifier unit 232e satisfy a criterion. The opposing direction of the electrodes 130a and 130e corresponding to the first DAC amplifier unit 232a and the fifth DAC amplifier unit 232e is perpendicular to the opposing direction of the electrodes 130c and 130g corresponding to the third DAC amplifier unit 232c and the seventh DAC amplifier unit 232g. One of the four combinations of DAC amplifier units 232a, 232c, 232e, and 232g may be a DAC amplifier unit newly installed in the electron beam drawing apparatus 1 by replacement.

[0056] 6(c), the irradiation control unit 5 may determine whether the comparison results of the individual information i3, i4, i7, and i8 for four combinations of the third DAC amplifier unit 232c, the seventh DAC amplifier unit 232g, the fourth DAC amplifier unit 232d, and the eighth DAC amplifier unit 232h satisfy a criterion. The electrodes 130d and 130h corresponding to the fourth DAC amplifier unit 232d and the eighth DAC amplifier unit 232h face each other at positions adjacent to the electrodes 130c and 130g corresponding to the third DAC amplifier unit 232c and the seventh DAC amplifier unit 232g. One of the four combinations of DAC amplifier units 232c, 232d, 232g, and 232h may be a DAC amplifier unit newly installed in the electron beam drawing apparatus 1 by replacement.

[0057] The illumination control unit 5 determines that the criterion is met, for example, when the individual information i1 to i8 compared by the comparison unit 4 match each other. Furthermore, the illumination control unit 5 may also determine that the criterion is met even when the compared individual information i1 to i8 do not strictly match but are in a corresponding relationship such that the electrical characteristics of the DAC amplifier units are considered to be identical. For example, the illumination control unit 5 may determine that the criterion is met when the models of the DAC amplifier units indicated in the compared individual information i1 to i8 are the same, even if the revision information previously described in conjunction with the model is different.

[0058] Furthermore, when the individual information is information on the electrical characteristics or performance of the DAC amplifier unit, for example, the irradiation control unit 5 may determine that the criteria are met when the electrical characteristics of the DAC amplifier unit indicated in the compared individual information i1 to i8 are the same or fall within a predetermined range of characteristics (performance).

[0059] 5, the irradiation control unit 5 allows the electron beam drawing apparatus 1 to irradiate the electron beam 112 (step S4). For example, the irradiation control unit 5 allows the electron gun 110 to emit the electron beam 112, thereby allowing the electron beam drawing apparatus 1 to irradiate the electron beam 112.

[0060] On the other hand, if the comparison result does not satisfy the criteria (step S3: No), the irradiation control unit 5 prohibits the electron beam drawing apparatus 1 from irradiating the electron beam 112 (step S5).

[0061] After the irradiation of the electron beam 112 is prohibited, the notification unit 6 outputs a notification that the comparison result does not satisfy the criteria (step S6). Note that the prohibition of irradiation of the electron beam 112 (step S5) and the output of the notification (step S6) may be reversed or may be performed simultaneously.

[0062] As described above, in this embodiment, the reading unit 3 reads the individual information i1 to i8 of at least two of the multiple DAC amplifier units 232a to 232h, and the comparing unit 4 compares the individual information i1 to i8 read by the reading unit 3.

[0063] As a result, as new types of DAC amplifier units are developed, it is no longer necessary to standardize the types of DAC amplifier units that can be installed in each device for all connected DAC amplifier units, as was previously the case. Therefore, according to this embodiment, it is possible to alleviate the restrictions on the DAC amplifier units that can be installed. This makes it possible to reduce operation costs and management costs.

[0064] Furthermore, as in this embodiment, when the comparison result of the individual information for a specific combination of at least two DAC amplifier units 232a to 232h does not satisfy the criteria, the notification unit 6 may output a notification to a display or the like that the comparison result does not satisfy the criteria.

[0065] This prevents DAC amplifier units with inconsistent electrical characteristics from being randomly mixed together, thereby suppressing deterioration of drawing performance. Also, by outputting a notification that the comparison result does not satisfy the criteria, the user can easily understand that the replaced DAC amplifier unit 232a to 232h is not appropriate, thereby improving convenience.

[0066] Furthermore, as in this embodiment, the irradiation control unit 5 may prohibit the electron beam drawing apparatus 1 from irradiating the electron beam 112 when the comparison result of the individual information i1 to i8 for a specific combination of DAC amplifier units 232a to 232h does not satisfy the criteria.

[0067] This makes it possible to prevent drawing from being performed with inappropriate DAC amplifier units 232a to 232h installed.

[0068] Furthermore, as in this embodiment, the specific combination of DAC amplifier units 232a to 232h may be at least one pair of DAC amplifier units 232a to 232h that apply a deflection voltage to electrodes 130a to 130h that face each other.

[0069] This makes it possible to properly apply a desired voltage between the opposing electrodes 130a to 130h, which may affect the drawing performance.

[0070] The present embodiment can also be modified in various ways as described below.

[0071] For example, as shown in FIG. 7, a repeater 250 (i.e., a distributor) may be provided between the control computer 202 and the DAC amplifier units 232a to 232h, and the reading unit 3 and the comparing unit 4 may be arranged in the repeater 250. In this case, the reading unit 3 and the comparing unit 4 may be stored in a memory on a System on a Chip (SoC) installed in the repeater 250 as software or firmware executed by the SoC. Alternatively, the reading unit 3 and the comparing unit 4 may be logic circuits configured with an Application Specific Integrated Circuit (ASIC), a Field Programmable Gate Array (FPGA), or the like installed in the repeater 250. In the example shown in FIG. 7, the comparing unit 4 outputs the comparison result to an irradiation control unit 5 in the control computer 202.

[0072] 8, the repeater 250 may include a reading unit 3, a comparing unit 4, an illumination control unit 5, and a notifying unit 6. In this case, the reading unit 3, the comparing unit 4, the illumination control unit 5, and the notifying unit 6 may be stored in a memory on the SoC as software or firmware executed by the SoC. Alternatively, the reading unit 3, the comparing unit 4, the illumination control unit 5, and the notifying unit 6 may be a logic circuit configured with an ASIC, FPGA, or the like installed in the repeater 250. The notifying unit 6 of the repeater 250 may output a notification signal to an LED, for example, to light up the LED, when the comparison result of the individual information i1 to i8 for a specific combination of DAC amplifier units 232a to 232h does not satisfy a criterion.

[0073] 9, the electron beam drawing apparatus 1 may also include a terminal device 260 that receives an input operation to specify a specific combination of DAC amplifier units 232a-232h. In this case, the reading unit 3 reads the individual information i1-i8 of the DAC amplifier units 232a-232h specified by the input operation to the terminal device 260, and the comparing unit 4 compares the individual information i1-i8 of the specified DAC amplifier units 232a-232h. The terminal device 260 may display the comparison results of the comparing unit 4. According to the example shown in FIG. 9, the user can specify a specific combination of DAC amplifier units 232a-232h, thereby improving convenience.

[0074] 10, the electron beam lithography apparatus 1 may be connected via a network 8 to a server 7 storing the criteria for the determination by the irradiation control unit 5. In the example shown in FIG. 10, a plurality of electron beam lithography apparatuses 1 having the above-described configuration are connected to the server 7. In the example shown in FIG. 10, the notification unit 6 outputs a notification to a display or the like when the comparison result of the individual information i1 to i8 does not satisfy the criteria stored in the server 7. In this case, the irradiation control unit 5 may prohibit the electron beam lithography apparatus 1 from emitting the electron beam 112. According to the example shown in FIG. 10, when the criteria change, there is no need to update the criteria in each electron beam lithography apparatus 1, and the latest criteria can always be used for determination, thereby improving convenience. Furthermore, the server 7 may be configured to store at least information for the comparison unit 4 to compare the individual information, but does not necessarily need to store the criteria for the determination by the irradiation control unit 5. In this configuration, the comparison unit 4 can compare the individual information using the information for comparing the individual information stored in the server 7. For example, information for comparing individual information is information such as the model and performance of the latest DAC amplifier unit that can be used in the electron beam lithography apparatus 1. Note that this information may be information that directly indicates the model and performance of the DAC amplifier unit, or it may be information that is linked to the model and performance of the DAC amplifier unit. If this information is linked, the model and performance of the DAC amplifier unit can be obtained from the linked information.

[0075] Here, the information such as the model and performance of the latest DAC amplifier unit usable in the electron beam lithography apparatus 1 may be updated for each electron beam lithography apparatus 1, but the updating work becomes enormous when there are a large number of electron beam lithography apparatuses 1. However, if the information such as the model and performance of the latest DAC amplifier unit usable in the electron beam lithography apparatus 1 is stored in the server 7, only one updating work for the server 7 is required. This makes it possible to reduce the work of updating the information such as the model and performance of the latest DAC amplifier unit usable in the electron beam lithography apparatus 1.

[0076] In the above-described embodiment, an example has been described in which the reading unit 3, the comparing unit 4, the irradiation control unit 5, and the notifying unit 6 are configured to operate with the DAC amplifier units 232a to 232h corresponding to the main deflector 130 as the target. However, without being limited to this configuration, the reading unit 3, the comparing unit 4, the irradiation control unit 5, and the notifying unit 6 may be configured to operate with the DAC amplifier unit 222 corresponding to the shaping deflector 124 or the DAC amplifier unit 240 corresponding to the sub-deflector 132 as the target.

[0077] The above-described embodiments are presented as examples and are not intended to limit the scope of the invention. The embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included within the scope and spirit of the invention, as well as within the scope of the invention and its equivalents as defined in the claims. [Explanation of symbols]

[0078] 1. Electron beam lithography equipment 130 Main deflector 130a~h electrode 202 Control Computer 232a~h DAC amplifier unit 233a~h Storage medium 260 Terminal Equipment 3 Reading unit 4 Comparison section 5. Irradiation control unit 6 Notification section 7 Server

Claims

1. a plurality of deflection voltage generators that generate deflection voltages to be applied to a plurality of electrodes of a deflector that deflects a charged particle beam, each of the plurality of deflection voltage generators having a memory unit that stores individual information of the corresponding deflection voltage generator; a reading unit that reads the individual information of at least two of the plurality of deflection voltage generators; a comparison unit that compares the individual information read by the reading unit; A charged particle beam irradiation device comprising:

2. 2. The charged particle beam irradiation device according to claim 1, further comprising a notification unit that notifies a user that a criterion is not met when a comparison result between the individual information for a specific combination of the at least two deflection voltage generators does not meet a criterion.

3. an irradiation control unit that controls irradiation of the charged particle beam by the charged particle beam irradiation device; 2. The charged particle beam irradiation device according to claim 1, wherein the irradiation control unit prohibits irradiation of the charged particle beam when a comparison result between the individual information for a specific combination of the deflection voltage generators among the at least two deflection voltage generators does not satisfy a criterion.

4. 4. The charged particle beam irradiation system according to claim 2, wherein the specific combination of deflection voltage generators is at least a pair of deflection voltage generators that apply the deflection voltage to electrodes facing each other.

5. a terminal device that accepts an input operation for designating the specific combination of deflection voltage generators; 4. The charged particle beam irradiation system according to claim 2, wherein the comparison unit reads the individual information of the deflection voltage generators designated by the input operation and compares the individual information with each other.

6. the charged particle beam irradiation device is connected via a network to a server in which at least information to be compared is stored; The charged particle beam irradiation device according to claim 1 , wherein the comparison unit performs the comparison using the information for comparison.

7. a step of reading individual information of at least two of a plurality of deflection voltage generators, each of which generates deflection voltages to be applied to a plurality of electrodes of a deflector that deflects a charged particle beam, the plurality of deflection voltage generators each having a memory unit in which individual information of the corresponding deflection voltage generator is stored; a step of comparing the read individual information with each other; A charged particle beam irradiation method comprising:

8. On the computer, a step of reading the individual information of at least two of a plurality of deflection voltage generators that generate deflection voltages to be applied to a plurality of electrodes of a deflector that deflects a charged particle beam, the plurality of deflection voltage generators each having a memory unit in which individual information of the corresponding deflection voltage generator is stored; and a step of comparing the read individual information with each other; A program to execute.

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