Processing apparatus and shower head

Abstract

To provide a processing apparatus for efficiently and uniformly processing a peripheral edge of a processing object with plasma in a circumferential direction of the processing object.SOLUTION: A processing apparatus 1 for processing a peripheral part of an object to be processed (wafer W) with plasma includes a processing container 10, a support part (three or more lifter pins 11) for supporting the wafer, and a shower head structure 20 facing the wafer supported by the support part. The shower head has first gas holes 21 provided in a R1 portion of a first region facing a central portion of the wafer supported by the support portion and configured to discharge an inert gas, a partition portion 22 having an annular shape in a plan view and configured to partition the first region and a R2 portion of a second region surrounding an outer periphery of the first region at a position facing an outer peripheral portion of the wafer supported by the support portion, and second gas holes 23 provided in the second region and configured to discharge plasma. The partition portion is formed to extend downward, and the second gas holes are arranged annularly along an outer periphery of the partition portion in a plan view, or are formed annularly along the outer periphery of the partition portion in a plan view.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to a processing apparatus and a shower structure. [Background technology]

[0002] Patent Document 1 discloses a plasma processing apparatus for plasma processing the edge of a substrate. This plasma processing apparatus includes a processing vessel, a substrate support member that supports at least a portion of the substrate excluding the edge to be plasma processed within the processing vessel, is applied with high-frequency power, and has at least one side made of a dielectric material; and an opposing dielectric member that is made of a dielectric material and faces the substrate support member. The plasma processing apparatus also includes a side ground electrode that has a ground potential and is located on the side of the substrate supported by the substrate support member, close enough to the substrate to form an electrical connection with the edge of the substrate. In this plasma processing apparatus, an etching gas is supplied to the edge of the substrate. A gas flow path is provided in the center of the opposing dielectric member, and an inert gas is supplied to the center of the substrate through this gas flow path. This creates a flow of inert gas from the center of the substrate toward the edge, preventing the etching gas from penetrating the center of the substrate. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent Publication No. 2021-197244 Summary of the Invention [Problem to be solved by the invention]

[0004] The technology according to the present disclosure efficiently processes the peripheral portion of an object to be processed with plasma uniformly in the circumferential direction of the object to be processed. [Means for solving the problem]

[0005] One aspect of the present disclosure is a processing apparatus for processing a peripheral portion of a processing object using plasma, comprising: a processing vessel for accommodating the processing object; a support for supporting the processing object within the processing vessel; and a shower structure arranged to face the processing object supported on the support, wherein the shower structure has: a first gas hole arranged in a first region facing a central portion of the processing object supported on the support and ejecting an inert gas; a partition having an annular shape in a planar view, at a position facing the outer periphery of the processing object supported on the support, separating the first region from a second region surrounding the outer periphery of the processing object supported on the support; and a second gas hole arranged in the second region and ejecting plasma, wherein the partition is formed so as to hang down; and the second gas hole is arranged in a ring shape along the outer periphery of the partition in a planar view, or is formed in a ring shape along the outer periphery of the partition in a planar view. [Effects of the Invention]

[0006] According to the present disclosure, the peripheral portion of an object to be processed can be processed with plasma efficiently and uniformly in the circumferential direction of the object to be processed. [Brief explanation of the drawings]

[0007] [Figure 1] 1 is a longitudinal sectional view showing an outline of the configuration of a processing apparatus according to an embodiment of the present invention. [Figure 2] FIG. 2 is a partially enlarged view of FIG. [Figure 3] FIG. 2 is a top view of the shower structure. [Figure 4] FIG. 2 is a bottom view of the shower structure. [Figure 5] FIG. 10 is a diagram for explaining the main effects of the present embodiment. [Figure 6] FIG. 10 is a diagram for explaining the main effects of the present embodiment. [Figure 7] FIG. 10 is a vertical cross-sectional view illustrating another example 1 of the shower structure. [Figure 8] FIG. 10 is a vertical cross-sectional view illustrating another example of the shower structure. [Figure 9]FIG. 10 is a bottom view illustrating another example of the shower structure. [Figure 10] 10A and 10B are diagrams illustrating other examples of the support portion. [Figure 11] FIG. 10 is a bottom view illustrating a modified example of the second gas hole. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, a processing apparatus and a shower structure according to the present embodiment will be described with reference to the drawings. In this specification and the drawings, elements having substantially the same functional configurations are designated by the same reference numerals, and redundant description will be omitted.

[0009] <Processing equipment> Fig. 1 is a vertical cross-sectional view showing the outline of the configuration of a processing apparatus according to this embodiment, Fig. 2 is a partially enlarged view of Fig. 1, Fig. 3 and Fig. 4 are a top view and a bottom view, respectively, of a shower structure described below.

[0010] The processing apparatus 1 in Fig. 1 processes the peripheral portion of a semiconductor wafer (hereinafter referred to as "wafer") W, which is a substrate to be processed, using plasma. Specifically, the processing apparatus 1 removes an unnecessary film formed on the peripheral portion of the wafer W. The processing apparatus 1 includes a processing vessel 10.

[0011] The processing vessel 10 accommodates the wafer W and is configured to be depressurized. To this end, an exhaust mechanism (not shown) that exhausts the interior of the processing vessel 10 is connected to the processing vessel 10. The exhaust mechanism is connected to, for example, the bottom wall of the processing vessel 10. The processing vessel 10 is formed, for example, from aluminum in a cylindrical shape and is grounded. A loading / unloading port (not shown) for the wafer W is provided on the side wall of the processing vessel 10, and a gate valve (not shown) that opens and closes the loading / unloading port is provided at the loading / unloading port.

[0012] A plurality of (specifically, three or more) lifter pins 11 are provided as supports within the processing vessel 10. The supports support the object to be processed within the processing vessel 10, and more specifically, support the object to be processed so that both the front and back surfaces of the peripheral edge of the object to be processed are exposed within the processing vessel 10. In the present disclosure, the "periphery" of the wafer W refers to a portion of the wafer W that includes at least the bevel portion and the peripheral edge (APEX). An electrode (not shown) for electrically attracting the wafer W to the lifter pins 11 may be provided at the upper end of the lifter pins 11.

[0013] The processing apparatus 1 also includes a shower structure 20 disposed to face the wafer W supported by the lifter pins 11. In one embodiment, the shower structure 20, together with a support wall 30 supporting the shower structure 20, constitutes an upper wall, i.e., a ceiling wall, of the processing vessel 10 that covers the wafer W supported by the lifter pins 11.

[0014] As shown in FIG. 2 , the shower structure 20 has first gas holes 21 in a first region R1 facing the center of the wafer W supported by the lifter pins 11. The first gas holes 21 discharge an inert gas, such as argon gas. The first gas holes 21 discharge the inert gas downward. Specifically, the discharge direction is vertically downward. That is, the first gas holes 21 are provided to penetrate the first region R1 of the shower structure 20 in the vertical direction. As shown in FIGS. 3 and 4 , a plurality of first gas holes 21 are provided in the first region R1. Specifically, the first gas holes 21 are provided in a circular shape, having an area slightly smaller than that of the wafer W, along two horizontal directions that are perpendicular to each other, substantially over the entire surface of the first region R1. As shown in FIG. 1 , each of the first gas holes 21 is connected to an inert gas supply source 40 via a gas flow path 31 (described later) in the support wall 30. Specifically, each of the first gas holes 21 is connected to an inert gas supply source 40 via a diffusion space K1 and a gas flow path 31 in the support wall 30. The diffusion space K1 is a flow path that connects to the first gas holes 21 from above, and diffuses the inert gas from the gas flow path 31 in the support wall 30 and supplies it to each of the first gas holes 21. The diffusion space K1 is formed in, for example, a disk shape.

[0015] The shower structure 20 also has a partition 22 that is annular in plan view (specifically, annular in plan view concentric with the wafer W) that separates a first region R1 from a second region R2 surrounding the outer periphery of the first region R1 at a position facing the outer periphery of the wafer W supported by the lifter pins 11. In the present disclosure, the "outer periphery" of the wafer W refers to a portion including the peripheral edge of the wafer W and a portion slightly inside the peripheral edge (for example, a portion within 10 mm from the peripheral edge surface of the wafer W). Therefore, the partition 22 that separates the wafer W as described above at a position facing the outer periphery of the wafer W supported by the lifter pins 11 may be located across the peripheral edge of the wafer W and a portion slightly inside the peripheral edge in plan view, or may be located so as to overlap only the peripheral edge of the wafer W in plan view. Furthermore, the entirety of the partition 22 does not need to overlap with the outer periphery of the wafer W in a plan view, and as long as the effects of the partition 22 described below can be obtained, only a part of the partition 22 may overlap with the outer periphery of the wafer W supported by the lifter pins 11 in a plan view. Therefore, the outermost periphery of the partition 22 may be located outside the peripheral edge of the wafer W supported by the lifter pins 11, and the innermost periphery of the partition 22 may be located inside the outer periphery of the wafer.

[0016] The partitions 22 are formed so as to hang down, that is, so as to protrude downward. Specifically, the partitions 22 are formed so as to hang down toward the outer periphery of the wafer W supported by the lifter pins 11. By being formed in this manner, the partitions 22 are close to the wafer W at the outer periphery of the wafer W.

[0017] In one example, the outer peripheral surface of the partition portion 22 extends in the vertical direction in a cross-sectional view, and coincides with the peripheral end surface of the wafer W supported by the lifter pins 11 in a plan view. In one example, the inner surface of the partition portion 22 is an inclined surface that becomes lower toward the outside when viewed in cross section, and the upper end of the inner surface of the partition portion 22 is located inside the outer periphery of the wafer W supported by the lifter pins 11, and the lower end is located above the outer periphery of the wafer W.

[0018] Furthermore, the shower structure 20 is provided with second gas holes 23 in the second region R2. The second gas holes 23 discharge plasma, which is an etchant. As shown in FIG. 4, a plurality of the second gas holes 23 are provided so as to be arranged in a ring shape along the outer periphery of the partition 22 in a plan view. As shown in FIG. 1, each of the second gas holes 23 is connected to a remote plasma supply source 50 installed outside the processing chamber 10 via a gas flow path 32 (described later) in the support wall 30. Specifically, each of the second gas holes 23 is connected to the remote plasma supply source 50 via a diffusion space K2 and the gas flow path 32 in the support wall 30. The diffusion space K2 is a flow path connected to the second gas holes 23 from above, and diffuses plasma from the gas flow path 32 in the support wall 30 and supplies it to each of the second gas holes 23. The diffusion space K2 is formed, for example, in a ring shape concentric with the diffusion space K1. The remote plasma source 50 supplies reactive plasma, specifically, radicals such as oxygen radicals, as the plasma. For example, the remote plasma source 50 can activate an inert gas such as argon gas and an oxygen-containing gas such as oxygen gas, which are supplied to the remote plasma source 50, with plasma to form oxygen radicals.

[0019] The direction in which plasma is discharged from the second gas holes 23 is, for example, vertically downward, which is common to all of the second gas holes 23. That is, all of the second gas holes 23 are, for example, vertical holes that discharge plasma vertically downward, and are formed so as to penetrate the second region R2 of the shower structure 20 in the vertical direction. However, if it is difficult to configure all second gas holes 23 as vertical holes as described above due to the positional relationship between the shower structure 20 and other components of the processing apparatus 1, some of the second gas holes 23 may be oblique holes that discharge plasma obliquely downward. In this case, the oblique holes are preferably formed so as to discharge plasma obliquely downward in a direction parallel to a tangent at the position of the oblique hole to a circle centered at the center of the wafer W supported by the lifter pins 11 in a plan view. The second gas holes 23 formed as oblique holes are formed so as to penetrate the second region R2 of the shower structure 20 obliquely downward. By forming the oblique holes constituting the second gas holes 23 as described above, it is possible to prevent the plasma from the second gas holes 23 from being directed toward the center of the wafer W supported by the lifter pins 11. From the viewpoint of preventing the plasma from being deactivated while passing through the second gas holes 23, it is preferable that all the second gas holes 23 be vertical holes, since vertical holes can shorten the flow path length compared to oblique holes.

[0020] Each of the second gas holes 23 is formed to be thicker, i.e., have a larger diameter, than the first gas holes 21, in order to prevent the plasma from being deactivated while passing through the second gas holes 23. The diameter of the second gas holes 23 is, for example, 2 mm or more.

[0021] Furthermore, the second gas hole 23 is located at a longer distance to the wafer W supported by the lifter pins 11 than the first gas hole 21. That is, the second gas hole 23 is located above the first gas hole 21.

[0022] Furthermore, each of the second gas holes 23 is provided at a position that does not overlap the wafer W supported by the lifter pins 11 in a plan view, i.e., is provided outside the peripheral edge of the wafer W in a plan view. The distance of each of the second gas holes 23 from the peripheral edge of the wafer W is set so that the peripheral edge of the wafer W can be efficiently processed by the plasma from the second gas holes 23.

[0023] 2, the shower structure 20 further has a recess 24 and a recess 25. The recess 24 and the recess 25 are each recessed downward and open upward. The recess 24 is formed in a circular shape in a plan view, as shown in Fig. 3. The upper opening of the recess 24 is closed by the support wall 30, thereby forming the aforementioned disk-shaped diffusion space K1. The recess 25 is formed in an annular shape in plan view (specifically, a circular annular shape in plan view). The upper opening of the recess 25 is closed by the support wall 30, thereby forming an annular diffusion space K2.

[0024] As shown in FIGS. 1 and 2, the support wall 30 has a gas flow path 31 and a gas flow path 32 formed therein. The gas flow passage 31 is formed in a single manner so as to be continuous with the diffusion space K1 and extend upward (specifically, vertically upward) from the center of the diffusion space K1 in a plan view. A plurality of gas flow paths 32 are provided along the diffusion space K2 in a plan view. Each of the gas flow paths 32 is formed to communicate with the diffusion space K2 and extend upward (specifically, vertically upward).

[0025] The shower structure 20 and the support wall 30 are each made of, for example, aluminum.

[0026] The processing apparatus 1 is also provided with an elevating mechanism 60 that raises and lowers the lifter pins 11. The elevating mechanism 60 includes, for example, a holding member 61 that collectively holds the plurality of lifter pins 11, support columns 62 that support the holding member 61 from below, and a drive mechanism 63 that generates a drive force for raising and lowering the support columns 62. The support columns 62 penetrate the bottom wall of the processing vessel 10 and are connected to the drive mechanism 63 provided outside the processing vessel 10. As the support columns 62 are raised and lowered by the drive mechanism 63, the holding member 61 and the lifter pins 11 are raised and lowered. As a result, the wafer W can be transferred between the lifter pins 11 and a transfer mechanism outside the processing apparatus, and the distance between the wafer W supported by the lifter pins 11 and the partition 22 of the shower structure 20 can be adjusted.

[0027] Bellows 64 are provided between the driving mechanism 63 and the penetration portion of the support column 62 in the bottom wall of the processing vessel 10 so as to surround the outer periphery of the support column 62. This keeps the processing vessel 10 airtight. The lifting mechanism 60 is controlled by a control unit 100, which will be described later.

[0028] The processing device 1 configured as described above includes at least one control unit 100. The control unit 100 processes computer-executable instructions that cause the processing device 1 to perform the various steps described in this disclosure. The control unit 100 may be configured to control each element of the processing device 1 to perform the various steps described herein. In one embodiment, part or all of the control unit 100 may be included in the processing device 1. The control unit 100 may include a processing unit, a storage unit, and a communication interface. The control unit 100 may be implemented, for example, by a computer. The processing unit may be configured to read from the storage unit a program that provides logic or routines that enable various control operations and execute the read program to perform various control operations. This program may be stored in the storage unit in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit and read from the storage unit by the processing unit for execution. The medium may be various computer-readable storage media or a communication line connected to the communication interface. The storage medium may be temporary or non-temporary. The processing unit may be a CPU (Central Processing Unit) or one or more circuits. The storage unit may include a RAM (Random Access Memory), a ROM (Read Only Memory), a HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface may communicate with the processing device 1 via a communication line such as a LAN (Local Area Network).

[0029] <Processing example using processing device 1> The following describes an example of processing performed using the processing apparatus 1. It is assumed that the wafer W to be processed in the following processing has been subjected to etching processing (cleaning processing).

[0030] (Step S1: Loading of wafer W) For example, first, the wafer W is loaded into the processing chamber 10. Specifically, after a wafer W supported by a transfer mechanism provided outside the processing apparatus 1 is loaded into the processing vessel 10, the lifter pins 11 are raised, and the height of the wafer W supported by the lifter pins 11 becomes the transfer height. As a result, the wafer W is transferred from the transfer mechanism to the lifter pins 11. Next, the transfer mechanism is removed from the processing vessel 10, and the lifter pins 11 are raised. As a result, the height of the wafer W supported by the lifter pins 11 becomes the processing height, and the distance from the outer periphery of the wafer W to the partition 22 of the shower structure 20 becomes a predetermined distance. Furthermore, after the transfer mechanism is removed, the inside of the processing vessel 10 is depressurized to a predetermined vacuum level by an exhaust mechanism (not shown).

[0031] (Step S2: Cleaning) Next, the film formed on the peripheral edge of the wafer W is removed by plasma. Specifically, radicals such as oxygen radicals from the remote plasma supply source 50 are supplied into the processing chamber 10 through the second gas holes 23 of the shower structure 20. These radicals remove films formed on the front and back surfaces of the peripheral edge of the wafer W, i.e., the peripheral edge of the wafer W is cleaned.

[0032] Simultaneously with the supply of radicals, an inert gas such as argon gas from the supply source 40 is discharged from each of the first gas holes 21 of the shower structure 20 toward the wafer W supported by the lifter pins 11. This creates a flow of inert gas toward the outside (of the wafer W) in the gap between the partition 22 of the shower structure 20 and the outer periphery of the wafer W (specifically, between the lower surface of the partition 22 and the outer periphery of the surface of the wafer W). As a result, the radicals from the second gas holes 23 are prevented from traveling toward the center of the wafer W through the gap, and the film at the center of the wafer W is prevented from being removed by the radicals. For example, when a predetermined time has elapsed since the supply of radicals started, the supply of radicals and the supply of inert gas are stopped, and cleaning of the peripheral edge of the wafer W is completed.

[0033] (Step S3: Unloading the wafer W) Thereafter, the wafer W is unloaded from the processing chamber 10. Specifically, the wafer W is unloaded out of the processing chamber 10 in the reverse order of step S1. This completes a series of processes for one wafer W, and a series of processes for the next wafer W is then carried out.

[0034] <Major Effects of This Embodiment> As described above, in this embodiment, the processing apparatus 1 for processing the peripheral portion of a wafer W with plasma includes a processing vessel 10 that accommodates the wafer W and lifter pins 11 that support the wafer W in the processing vessel 10. Also, in this embodiment, the processing apparatus 1 includes a shower structure 20 that faces the wafer W supported by the lifter pins 11. Furthermore, in this embodiment, the shower structure 20 includes a first gas hole 21, a partition 22, and a second gas hole 23. The first gas hole 21 is provided in a first region R1 that faces the central portion of the wafer W supported by the lifter pins 11 and discharges an inert gas. The partition 22 is located opposite the outer periphery of the wafer W supported by the lifter pins 11, and separates the first region from a second region R2 that surrounds the outer periphery of the first region R1. The partition 22 is formed in an annular shape in a plan view. The second gas holes 23 are provided in the second region R2 of the shower structure 20 and discharge plasma. That is, in this embodiment, plasma is discharged from above the wafer W supported by the lifter pins 11. Therefore, according to this embodiment, unlike the mode in which plasma is discharged from the side of the wafer W supported by the lifter pins 11, it is possible to reduce the proportion of plasma that moves below the wafer W and is unable to contribute to cleaning the peripheral edge of the wafer W.

[0035] In this embodiment, the partition 22 is formed to droop. Furthermore, a plurality of second gas holes 23 are provided so as to be arranged in an annular shape along the outer periphery of the partition 22 in a plan view. Therefore, unlike this embodiment, it is possible to suppress deactivation of plasma from the second gas holes 23 by the partition 22, compared to a case in which the partition 22 is formed to extend obliquely downward and outward toward the outer periphery of the wafer W and the second gas holes 23 are formed at positions overlapping with the partition 22 in a plan view.

[0036] Therefore, according to this embodiment, the proportion of the plasma from the second gas holes 23, that is, the etchant, that contributes to cleaning the peripheral edge of the wafer W can be increased. Furthermore, as described above, since a plurality of second gas holes 23 are provided in a ring-shaped arrangement along the outer periphery of the partition portion 22 in a plan view, plasma can be supplied uniformly to the peripheral portion of the wafer W in the circumferential direction of the wafer W. Therefore, according to this embodiment, the peripheral portion of the wafer W can be processed with plasma efficiently and uniformly in the circumferential direction of the wafer W. In the following description, the term "circumferential direction" refers to the circumferential direction of the wafer W supported by the lifter pins 11.

[0037] Furthermore, according to this embodiment, because the partition 22 is formed to hang down, a space K3 is widened between the first region R1, in which the first gas holes 21 of the shower structure 20 are provided, and the surface of the wafer W supported by the lifter pins 11. Therefore, the inert gas discharged from the first gas holes 21 is diffused in this space K3 and then flows toward the gap between the partition 22 of the shower structure 20 and the outer periphery of the wafer W. This makes it possible to make the outward flow of the inert gas in the gap more uniform in the circumferential direction.

[0038] Furthermore, according to this embodiment, the partition 22 is formed to droop, and the aforementioned space K3 is widened, so that the pressure difference between the space K3 and the space K4 below the wafer W supported by the lifter pins 11 is small. Therefore, it is possible to suppress deformation of the wafer W due to this pressure difference.

[0039] Furthermore, the fact that the partition 22 is formed to droop as described above means that the second gas holes 23 are located above the lower end of the partition 22. Therefore, compared to the configuration shown in FIG. 5 in which a portion 501 of the shower structure 500 facing the outer periphery of the wafer W supported by the lifter pins 11 protrudes downward and the lower ends of the plasma outlet holes 502 are located at the same height as the lower surface of the portion 501, the following effects are achieved. That is, in this embodiment, the distance from the plasma outlet holes (the second gas holes 23 in this embodiment) to the peripheral edge of the wafer W supported by the lifter pins 11 is longer than in the configuration shown in FIG. 5. Therefore, plasma can be supplied from the plasma outlet holes (the second gas holes 23 in this embodiment) to the peripheral edge of the wafer W more uniformly in the circumferential direction, and the amount of film removal by the plasma at the peripheral edge of the wafer W can be prevented from varying in the circumferential direction. That is, it is possible to prevent the formation pattern of the plasma ejection holes (second gas holes 23 in this embodiment) from being transferred to the processing results by the plasma from the ejection holes.

[0040] Furthermore, the fact that the partition portion 22 is formed to droop as described above also means that the first gas holes 21 are located above the lower end of the partition portion 22. Therefore, compared to the configuration shown in FIG. 6 in which a portion 511 of the shower structure 510 facing the outer periphery of the wafer W supported by the lifter pins 11 protrudes downward and inert gas outlet holes 512 open at the lower end of the portion 511, the following effects are achieved. That is, in this embodiment, the distance from the inert gas outlet holes (the first gas holes 21 in this embodiment) to the peripheral edge of the wafer W supported by the lifter pins 11 is longer than in the configuration shown in FIG. 6. Therefore, the inert gas can be supplied from the inert gas outlet holes (the first gas holes 21 in this embodiment) to the peripheral edge of the wafer W more uniformly in the circumferential direction, and the amount of film removal by plasma at the peripheral edge of the wafer W can be prevented from varying in the circumferential direction. That is, it is possible to prevent the formation pattern of the inert gas ejection holes (first gas holes 21 in this embodiment) from being transferred to the result of plasma processing.

[0041] Furthermore, in this embodiment, the second gas holes 23 are located at a longer distance to the wafer W supported by the lifter pins 11 than the first gas holes 21. Therefore, in this embodiment, the plasma from the second gas holes 23 can be supplied to the peripheral edge of the wafer W more uniformly in the circumferential direction than in a case where the second gas holes 23 are located at a shorter distance than the first gas holes 21. In other words, it is possible to prevent the formation pattern of the second gas holes 23 from being transferred to the processing results of the plasma from the second gas holes 23.

[0042] In this embodiment, the distance (first distance) from the first gas holes 21 of the shower structure 20 to the wafer W supported by the lifter pins 11, the distance (second distance) from the partition 22 of the shower structure 20 to the wafer W, and the distance (third distance) from the second gas holes 23 of the shower structure 20 to the wafer W can be changed independently. Note that the first to third distances can be changed by, for example, changing the design of the shower structure 20 and adjusting the height of the lifter pins 11 that support the wafer W.

[0043] Furthermore, in this embodiment, the inner peripheral surface of the partition 22 of the shower structure 20 is inclined downward toward the outside in cross section. Therefore, compared to a configuration in which the inner peripheral surface extends vertically in cross section, this embodiment can prevent the inert gas from the first gas holes 21 from stagnating in the space K3. This prevents the inert gas supplied to the peripheral portion of the wafer W supported by the lifter pins 11 from becoming non-uniform in the circumferential direction, which would otherwise result from the stagnation. Furthermore, vortices generated in the space K3 due to the stagnation can prevent the plasma from the second gas holes 23 from entering the space K3 through the gap between the peripheral portion of the wafer W and the partition 22 of the shower structure 20.

[0044] Furthermore, in this embodiment, a plurality of first gas holes 21 are provided. Therefore, compared to when there is one first gas hole 21, the inert gas from the first gas holes 21 can be supplied more uniformly in the circumferential direction to the peripheral edge of the wafer W supported by the lifter pins 11. Furthermore, the density at which the inert gas from the first gas holes 21 collides with the wafer W can be reduced, thereby suppressing deformation of the wafer W due to the collision.

[0045] <Another example of shower structure 1> FIG. 7 is a vertical cross-sectional view illustrating another example 1 of the shower structure. 7, the diffusion space K2, which is a flow path connected to the second gas hole 23 of the shower structure 20, may be tapered in cross section so as to narrow toward the second gas hole 23. Specifically, the recess 25 of the shower structure 20 that constitutes the diffusion space K2 may be tapered in cross section so as to narrow toward the second gas hole 23. This makes it possible to prevent the plasma flowing through the gas flow passage 32 from colliding with the wall surface of the shower structure 20 that constitutes the recess 25 and becoming inactivated.

[0046] <Another example of shower structure 2> 8 and 9 are a vertical cross-sectional view and a bottom view for explaining another example 2 of the shower structure. As shown in FIGS. 8 and 9, the shower structure 20 may have a plasma concentration portion 26 formed in the second region R2 so as to hang down. The plasma concentrating portion 26 is provided so as to collectively surround the outer periphery of the plurality of second gas holes 23 arranged in an annular shape in plan view. The plasma concentrating portion 26 can prevent the plasma discharged from the second gas holes 23 from spreading outward. Therefore, the plasma from the second gas holes 23 can be made to more efficiently contribute to cleaning the peripheral edge of the wafer W supported by the lifter pins 11. Furthermore, compared to a case where the second gas holes 23 are simply made longer, it is possible to prevent the plasma from being deactivated before reaching the peripheral edge of the wafer W, and it is also possible to prevent the formation pattern of the second gas holes 23 from being transferred to the processing results.

[0047] The lower end of the plasma concentrating section 26 may be located below the wafer W at the processing height described above, specifically, below the rear surface of the wafer W. This allows the plasma from the second gas holes 23 to more efficiently contribute to cleaning not only the rear surface of the wafer W at the peripheral portion thereof but also the rear surface itself.

[0048] <Modification of the support part> FIG. 10 is a diagram for explaining another example of the support portion for supporting the wafer W. In FIG. In the above examples, a plurality of lifter pins 11 that support the wafer W at points are provided as the support portion. Alternatively, as shown in Fig. 11, a stage 70 that supports the wafer W on a surface may be provided. The stage 70 has a cylindrical portion 71 that has a smaller diameter than the wafer W, and supports the wafer W by the cylindrical portion 71 so that the outer periphery of the wafer W protrudes beyond the cylindrical portion 71. By using such a stage 70, it is possible to prevent the wafer W from being deformed due to the pressure difference described above. The stage 70 is configured to be able to move up and down in the same manner as the lifter pins 11 .

[0049] A temperature control mechanism for adjusting the temperature of the wafer W supported on the stage may be provided inside the stage 70. The temperature control mechanism may be a resistance heater or a flow path for a temperature control medium. The stage 70 may also be provided with electrodes for electrically attracting the wafer W to the stage. Incidentally, by providing the lifter pins 11 on the stage 70, the processing height of the wafer W may be adjusted by either the stage 70 or the lifter pins 11.

[0050] <Modification of the second gas hole 23> FIG. 11 is a bottom view illustrating a modified example of the second gas hole 23. As shown in FIG. As shown in FIG. 11, the second gas hole 23 may be formed in an annular shape (specifically, a circular ring shape) along the outer periphery of the partition portion 22 in a plan view. Instead of forming the second gas holes 23 in a circular ring shape, each of the plurality of second gas holes 23 may be formed in an arc shape, and the plurality of second gas holes 23 may be arranged so that they form a ring shape as a whole (specifically, a ring shape).

[0051] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive. The above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims. For example, the components of the above-described embodiments may be arbitrarily combined. Such an arbitrary combination naturally provides the functions and effects of each of the components involved in the combination, and also provides other functions and effects that are apparent to those skilled in the art from the description of this specification.

[0052] Furthermore, the effects described herein are merely descriptive or exemplary and are not limiting. In other words, the technology according to the present disclosure may achieve other effects that are apparent to those skilled in the art from the description of this specification, in addition to or in place of the above-described effects.

[0053] Note that the following configuration examples also fall within the technical scope of the present disclosure. (1) A processing apparatus for processing a peripheral portion of a processing object with plasma, a processing vessel that accommodates the object to be processed; a support part that supports the object to be processed in the processing vessel; a shower structure provided to face the treatment object supported by the support portion, The shower structure includes: a first gas hole provided in a first region facing a central portion of the processing object supported by the support portion, the first gas hole discharging an inert gas; a partition portion having an annular shape in a plan view, the partition portion being located at a position facing an outer periphery of the object to be processed supported by the support portion and separating the first region from a second region surrounding the outer periphery of the first region; a second gas hole provided in the second region and configured to discharge plasma; The partition is formed to hang down, The processing apparatus, wherein the second gas holes are provided in a plurality of positions so as to be arranged in a ring shape along the outer periphery of the partition section in a plan view, or are formed in a ring shape along the outer periphery of the partition section in a plan view. (2) The processing apparatus according to (1), wherein the distance to the object to be processed supported by the support is longer from the second gas hole than from the first gas hole. (3) a flow path communicating with the second gas hole from above; The processing apparatus according to (1) or (2), wherein the flow path is formed in a tapered shape that narrows toward the second gas hole in a cross-sectional view. (4) The shower structure further includes a plasma concentration portion formed in the second region so as to hang down, The processing apparatus according to any one of (1) to (3), wherein the plasma concentrating portion collectively surrounds the outer periphery of the plurality of second gas holes arranged in a ring shape in a plan view, or surrounds the outer periphery of the second gas holes formed in a ring shape in a plan view. (5) The second gas holes are provided in a plurality of positions so as to be arranged in an annular shape along the outer periphery of the partition portion in a plan view, the plurality of second gas holes include vertical holes and oblique holes, the vertical hole ejects plasma vertically downward; The processing apparatus according to any one of (1) to (4), wherein the oblique hole, in a plan view, ejects plasma diagonally downward parallel to a tangent direction at the position of the oblique hole of a circle centered on the center of the object to be processed supported by the support. (6) The processing apparatus according to any one of (1) to (6), wherein the second gas hole is provided at a position that does not overlap the object to be processed supported by the support in a plan view. (7) The processing apparatus according to any one of (1) to (6), wherein the plasma is supplied from a remote plasma source installed outside the processing chamber. (8) a lifting mechanism for lifting and lowering the support part; The processing apparatus according to any one of (1) to (7), further comprising a control unit that controls the lifting mechanism to adjust the distance between the object to be processed supported by the support unit and the partition unit of the shower structure. (9) The processing apparatus according to any one of (1) to (8), wherein the shower structure has a plurality of the first gas holes. (10) A shower structure provided in a processing vessel of a processing apparatus for processing a peripheral portion of a processing object with plasma, the shower structure being disposed opposite to the processing object supported by a support, the shower structure comprising: a first gas hole provided in a first region facing a central portion of the processing object supported by the support portion, the first gas hole discharging an inert gas; a partition portion having an annular shape in a plan view, the partition portion being located at a position facing an outer periphery of the object to be processed supported by the support portion and separating the first region from a second region surrounding the outer periphery of the first region; a second gas hole provided in the second region and configured to discharge plasma; The partition is formed to hang down, The shower structure, wherein the second gas holes are provided in a plurality of positions so as to be arranged in a ring shape along the outer periphery of the partition in a plan view, or are formed in a ring shape along the outer periphery of the partition in a plan view. [Explanation of symbols]

[0054] 1 Processing equipment 10 Processing container 11 Lifter pin 20 shower structure 21 First gas hole 22 Partition 23 Second gas hole 70 stages R1 First Region R2 Second Region W semiconductor wafer

Claims

1. A processing apparatus for processing a peripheral portion of a processing object with plasma, a processing vessel that accommodates the object to be processed; a support part that supports the object to be processed in the processing vessel; a shower structure provided to face the treatment object supported by the support portion, The shower structure includes: a first gas hole provided in a first region facing a central portion of the processing object supported by the support portion, the first gas hole discharging an inert gas; a partition portion having an annular shape in a plan view, the partition portion being located at a position facing an outer periphery of the object to be processed supported by the support portion and separating the first region from a second region surrounding the outer periphery of the first region; a second gas hole provided in the second region and configured to discharge plasma; The partition is formed to hang down, The processing apparatus, wherein the second gas holes are provided in a plurality of positions so as to be arranged in a ring shape along the outer periphery of the partition portion in a plan view, or are formed in a ring shape along the outer periphery of the partition portion in a plan view.

2. The processing apparatus according to claim 1 , wherein a distance to the object supported by the support is longer from the second gas hole than from the first gas hole.

3. a flow path communicating with the second gas hole from above; The processing apparatus according to claim 1 , wherein the flow path is formed in a tapered shape that narrows toward the second gas hole in a cross-sectional view.

4. the shower structure further includes a plasma concentration portion formed in the second region so as to hang down; 3. The processing apparatus according to claim 1, wherein the plasma concentrating portion collectively surrounds the outer periphery of the plurality of second gas holes arranged in a ring shape in a plan view, or surrounds the outer periphery of the second gas holes formed in a ring shape in a plan view.

5. the second gas holes are provided in plurality and arranged in an annular shape along the outer periphery of the partition portion in a plan view, the plurality of second gas holes include vertical holes and oblique holes, the vertical hole ejects plasma vertically downward; 3. The processing apparatus according to claim 1, wherein the oblique hole ejects plasma in a diagonally downward direction parallel to a tangent at the position of the oblique hole of a circle centered on a center of the processing object supported by the support, in a plan view.

6. The processing apparatus according to claim 1 , wherein the second gas hole is provided at a position that does not overlap the object to be processed supported by the support in a plan view.

7. 3. The processing apparatus according to claim 1, wherein the plasma is supplied from a remote plasma source installed outside the processing vessel.

8. a lifting mechanism that lifts and lowers the support portion; 3. The processing apparatus according to claim 1, further comprising: a control unit that controls the lifting mechanism to adjust a distance between the object to be processed supported by the support unit and the partition unit of the shower structure.

9. 3. The processing apparatus according to claim 1, wherein the shower structure has a plurality of the first gas holes.

10. 1. A shower structure provided in a processing vessel of a processing apparatus that processes a peripheral portion of a processing object with plasma, the shower structure being disposed opposite to a processing object supported by a support, the processing object being supported by a support, the shower structure comprising: a first gas hole provided in a first region facing a central portion of the processing object supported by the support portion, the first gas hole discharging an inert gas; a partition portion having an annular shape in a plan view, the partition portion being located at a position facing an outer periphery of the object to be processed supported by the support portion and separating the first region from a second region surrounding the outer periphery of the first region; a second gas hole provided in the second region and configured to discharge plasma; The partition is formed to hang down, the second gas holes are provided in a plurality of positions so as to be arranged in an annular shape along the outer periphery of the partition in plan view, or are formed in an annular shape along the outer periphery of the partition in plan view.

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