Coating film forming method and semiconductor device manufacturing method using the same

Abstract

To provide a coating film forming method capable of forming a stripe-shaped coating film at a desired position on a substrate with high positional accuracy and high production efficiency, and to provide a method of manufacturing a semiconductor device using the same.SOLUTION: A coating film forming method for forming a coating film so as to cover two or more rows of patterns in a stripe shape while conveying a long film substrate, the method comprising: a step of detecting an expansion / contraction ratio of the film substrate in a coating width direction while the film substrate is being conveyed; and a step of correcting the expansion / contraction ratio in the coating width direction by changing a conveying tension of the film substrate according to the expansion / contraction ratio.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to a coating film forming method and a semiconductor device manufacturing method using the same. [Background technology]

[0002] In recent years, field-effect transistors (FETs) using organic semiconductors have been actively investigated with the aim of realizing low-cost, large-area, flexible, and bendable semiconductor devices. Among these, there is a demand for technology that allows continuous layered pattern formation on roll-shaped substrates and coating formation on patterns with high positional accuracy.

[0003] Specific applications include displays and sensors, and in particular, wireless communication systems using RFID (Radio Frequency IDentification) technology. RFID tags are expected to be used in a variety of applications, including logistics management, product management, and shoplifting prevention, and have already been introduced in IC cards such as transportation cards and product tags.

[0004] Generally, the driving circuit in an RFID tag is composed of a complementary circuit consisting of p-type and n-type semiconductor elements to reduce power consumption. However, it is known that semiconductor elements using carbon nanotubes (CNTs) usually exhibit the characteristics of p-type semiconductor elements in the atmosphere. In addition, semiconductor elements using organic semiconductors are single-channel, so a complementary circuit cannot be composed of the same material.

[0005] For FETs using CNTs, a technique has been proposed in which, after forming a p-type semiconductor element, a layer of n-type modifying polymer is formed on the semiconductor layer to modify the p-type characteristics to n-type characteristics (see, for example, Patent Document 1). This method not only produces n-type semiconductor elements by applying a material in stripes to p-type semiconductor elements arranged in a straight line, but also achieves a good winding shape because no localized unevenness occurs, and improves production efficiency.

[0006] However, if the substrate is flexible, the heat treatment in the continuous roll-to-roll process can cause the substrate to expand and contract, even with the same tension, resulting in significant changes in dimensions. As a result, even if stripe coating is applied to semiconductor elements arranged in a line, some elements will not be covered, making it difficult to obtain the desired characteristics.

[0007] Therefore, a method has been considered in which multiple divided blocks are placed on a porous adsorption stage and strain is generated in the stage by applying independent stress or heat to these blocks, thereby bringing the strain of the adsorbed resin film closer to the design value (see, for example, Patent Document 2). [Prior art documents] [Patent documents]

[0008] [Patent Document 1] International Publication No. 2020 / 026786 [Patent Document 2] Japanese Patent Application Laid-Open No. 2012-076307 Summary of the Invention [Problem to be solved by the invention]

[0009] However, the method described in Patent Document 2 has the problem of reduced production capacity (takt time) because it is performed while the resin film is stationary on the stage. Also, although the stage is divided into multiple blocks and stress and heat are set for each block to control the expansion and contraction of the resin film, the expansion rate becomes uneven at the boundary between the blocks, making it difficult to form the coating with high precision.

[0010] In view of the above problems, the present invention aims to provide a coating film forming method that can form a stripe-shaped coating film at a desired position on a substrate with high positional accuracy and high production efficiency, and a semiconductor device manufacturing method using the same. [Means for solving the problem]

[0011] In order to solve the above problems, the present invention has the following configuration. [1] A method for forming a coating film in which, for a pattern formed in multiple rows in the longitudinal direction of a long film substrate, a coating film is formed so as to cover two or more rows of the pattern in a stripe pattern while transporting the film substrate, the method comprising: a step of detecting an expansion / contraction rate of the film substrate in the coating width direction while transporting the film substrate; and a step of correcting the expansion / contraction rate in the coating width direction by changing the transport tension of the film substrate in accordance with the expansion / contraction rate. [2] The method for forming a coating film according to [1], wherein the film substrate is a film substrate whose expansion / contraction rate in the coating width direction changes by 0.01% or more when the conveying tension is changed from 20N to 60N. [3] A method for forming a coated film, using a coating head having a plurality of outlets that coat two or more rows of the pattern in a stripe pattern, to form a first coating film that covers at least a first pattern row on the film substrate by coating from a first outlet of the coating head, and a second coating film that covers a second pattern row on the film substrate by coating from a second outlet of the coating head, wherein, before coating begins, a distance B between the first pattern row and the second pattern row on the film substrate is measured, and the distance B is compared with a distance A between the first outlet and the second outlet of the coating head, thereby detecting the expansion / contraction rate of the film substrate in the coating width direction. [4] A method for forming a coated film, using a coating head having a plurality of discharge ports that coat two or more rows of the pattern in a stripe pattern, to form a first coating film that covers at least a first pattern row on the film substrate by coating from a first discharge port of the coating head, and a second coating film that covers a second pattern row on the film substrate by coating from a second discharge port of the coating head, wherein at a position a predetermined distance downstream from the coating section from the discharge port, a distance A' between the applied first coating film and the second coating film and a distance B between the first pattern row and the second pattern row on the film substrate are measured, and the distance B is compared with the distance A' to detect the expansion / contraction rate of the film substrate in the coating width direction. [5] The method for forming a coating film according to any one of [1] to [4], further comprising the steps of: detecting the amount of positional deviation of the pattern in the coating width direction relative to the coating position during transport of the film substrate; and correcting the position of the coating head or the film substrate in the coating width direction according to the amount of positional deviation. [6] The method for forming a coating film according to any one of [1] to [5], wherein two or more types of coating films having different coating widths are formed. [7] The method for forming a coated film according to any one of [1] to [6], wherein the coating is carried out by any one of a slit die, a dispenser, and an inkjet method. [8] A method for manufacturing a semiconductor device using the coating film forming method according to any one of [1] to [7], wherein the pattern is a pattern including a semiconductor element, and the coating film is an overcoat material that covers the semiconductor element. [9] The method for manufacturing a semiconductor device according to [8], wherein two or more types of the overcoat material, each having a different type and / or content ratio of the electron donor compound, are used to form one or more rows of coating films.

[10] The method for manufacturing a semiconductor device according to [8], wherein one or more rows of coating films are formed using an overcoat material containing an electron donor compound and an overcoat material containing an electron acceptor compound.

[11] The method for manufacturing a semiconductor device according to any one of [8] to

[10] , wherein the semiconductor device is a wireless communication device. [Effects of the Invention]

[0012] According to the present invention, it is possible to form a predetermined row of patterns on a film with high precision and high production efficiency. Furthermore, in the case of a semiconductor device that includes a semiconductor element as part of the pattern, it is possible to obtain a flexible semiconductor device with little variation in characteristics. [Brief explanation of the drawings]

[0013] [Figure 1] FIG. 1 is a schematic diagram illustrating an example of a coating film forming method according to a first embodiment of the present invention. [Figure 2] FIG. 1 is a schematic plan view showing an example of a coating film forming method according to a first embodiment of the present invention. [Figure 3A] 1A and 1B are schematic diagrams showing an example of detecting a stretching ratio according to the first embodiment of the present invention; [Figure 3B] 1 is a schematic diagram showing an example of detecting a stretching ratio according to the first embodiment of the present invention (A=B, X≠0). [Figure 3C] FIG. 1 is a schematic diagram showing an example of detecting a stretching ratio according to the first embodiment of the present invention; <B) [Figure 3D] 1A and 1B are schematic diagrams showing an example of detecting an expansion / contraction ratio according to the first embodiment of the present invention; [Figure 4] FIG. 10 is a schematic diagram illustrating an example of a coating film forming method according to a second embodiment of the present invention. [Figure 5] FIG. 10 is a schematic plan view showing an example of a coating film forming method according to a second embodiment of the present invention. [Figure 6A] 10A and 10B are schematic diagrams showing an example of detecting an expansion / contraction ratio according to the second embodiment of the present invention (A'=B). [Figure 6B] 10 is a schematic diagram showing an example of detecting a stretching ratio according to the second embodiment of the present invention (A'=B, X'≠0). [Figure 6C] FIG. 10 is a schematic diagram (A') showing an example of detecting the expansion / contraction ratio according to the second embodiment of the present invention; <B) [Figure 6D]10A and 10B are schematic diagrams showing an example of detecting an expansion / contraction ratio according to the second embodiment of the present invention (A'>B). [Figure 7] Schematic diagram showing an example of an adjustment mechanism for moving the coating head in the coating width direction. [Figure 8] Schematic cross-sectional views showing an example of a method for manufacturing a semiconductor device. [Figure 9] FIG. 10 is a schematic plan view showing an example of a coating film forming method according to a fourth embodiment of the present invention. [Figure 10] FIG. 10 is a schematic cross-sectional view showing an example of a coating head according to a fifth embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0014] Hereinafter, embodiments for carrying out the present invention will be described in detail. However, the present invention is not limited to the following embodiments. Furthermore, unless otherwise specified, the contents described as a preferred configuration in one embodiment can also be applied to other embodiments within the scope of the present invention.

[0015] (Embodiment 1) 1 is a schematic diagram showing an example of a coating film forming method according to embodiment 1 of the present invention. In embodiment 1, a process for forming a striped coating film on a film substrate 10 unwound from a film unwinding section 1 is shown.

[0016] The tension adjusting feed rolls 3A and 3B and the tension adjusting nip rolls 4A and 4B are rolls for adjusting the tension of the film substrate 10.

[0017] Tension meters 2A, 2B, and 2C are measuring instruments that measure the transport tension applied to film substrate 10 between film unwinding section 1 and tension adjustment feed roll 3A, between tension adjustment feed roll 3A and tension adjustment feed roll 3B, and between tension adjustment feed roll 3B and film winding section 8, respectively.

[0018] The cameras 5 are provided to capture images of the film substrate 10. The cameras 5 capture images necessary for detecting the expansion / contraction rate in the coating width direction of the film substrate 10. Therefore, the number and locations of the cameras to be installed are designed so that this purpose can be achieved.

[0019] The coating head 6 is provided to apply a coating film in two or more rows of stripes onto the film substrate 10. The drying oven 7 is an oven for drying the coating liquid applied in stripes onto the film substrate 10.

[0020] Any material may be used for the film substrate 10, as long as at least the surface on which the electrodes are disposed is insulating. Suitable organic materials include, but are not limited to, polyimide, polyvinyl alcohol, polyvinyl chloride, polyethylene terephthalate, polyvinylidene fluoride, polysiloxane, polyvinylphenol (PVP), polyester, polycarbonate, polysulfone, polyethersulfone, polyethylene, polypropylene, polyphenylene sulfide, polyparaxylene, and cellulose.

[0021] 2 is a schematic plan view showing an example of a coating film forming method according to the first embodiment of the present invention. A plurality of patterns 11A and 11B are formed on a film substrate 10 in the longitudinal direction, which is the transport direction of the film substrate 10. In the first embodiment, patterns 11A and 11B are patterns including semiconductor elements. The semiconductor element included in pattern 11A should be a semiconductor element with p-type characteristics, and the semiconductor element included in pattern 11B should be a semiconductor element with n-type characteristics.

[0022] In Fig. 2, patterns 11A and patterns 11B are alternately arranged in four columns each. A semiconductor device 12 is formed as an assembly including semiconductor elements included in these patterns, electronic components such as capacitors (not shown), and wiring that electrically connects them. In the example shown in Fig. 2, the semiconductor device 12 is formed by using an area including, for example, four rows and four columns of patterns 11A and patterns 11B, i.e., a total of 16 patterns, as one unit. Note that the number of patterns (number of rows, number of columns, total number) that constitute the unit of the semiconductor device 12 is not limited to this.

[0023] A semiconductor element formed by the method described below is usually a p-type semiconductor element in the atmosphere. Generally, a semiconductor circuit is configured as a complementary circuit consisting of p-type and n-type semiconductor elements to reduce its power consumption. Therefore, in order to convert the semiconductor element included in pattern 11B into an n-type semiconductor element, it is necessary to cover pattern 11B with a coating film (overcoat layer after drying) containing an electron donating material. The overcoat layer is a layer that is provided on top of the semiconductor layer of the p-type semiconductor element, and can convert the p-type characteristics of the p-type semiconductor element to n-type characteristics or adjust the p-type characteristics of the p-type semiconductor element. Specific examples of the overcoat layer will be described later. In the first embodiment, four rows (pattern rows 13A to 13D) consisting of pattern 11B are covered with a striped coating film.

[0024] Although there are no particular limitations on the coating method, slit die coating, dispenser coating, and inkjet coating are preferred, which allow coating without touching the substrate while maintaining a certain clearance. These methods can prevent damage or peeling of parts of patterns 11A and 11B even if the surface of film substrate 10 has irregularities of about 10 to 100 μm.

[0025] In the first embodiment, a dispenser method is used, and pattern arrays 13A to 13D are covered with a striped coating film by applying coating liquid from outlets 23A to 23D. Focusing on any two of the pattern arrays (these are referred to as the "first pattern array" and the "second pattern array," and the outlets of the coating head corresponding to these pattern arrays are referred to as the "first outlet" and the "second outlet"), the expansion / contraction rate of the film substrate in the coating width direction is detected from the relationship between "distance A" between the first and second outlets of the coating head and "distance B" between the first and second pattern arrays on film substrate 10.

[0026] The two cameras 5A(1) and 5A(2) are provided upstream of the coating head 6, and capture images of the pattern array before the coating film is formed in order to detect the above-mentioned "distance B."

[0027] 2, pattern sequence 13A captured by camera 5A(1) is the first pattern sequence, and pattern sequence 13D captured by camera 5A(2) is the second pattern sequence. The centers of the pattern sequences are center positions 14A and 14D, respectively, and the distance 15 between them is the above-mentioned "distance B."

[0028] Furthermore, outlet 23A that supplies the first coating film so as to cover the first pattern row is the first outlet, and outlet 23D that supplies the second coating film so as to cover the second pattern row is the second outlet. When the center positions of each outlet in the coating width direction are center positions 9A and 9D, respectively, the distance 16 between them is the above-mentioned "distance A."

[0029] The installation positions of camera 5A(1) and camera 5A(2) in the short direction of film substrate 10 correspond to the above-mentioned center positions 9A and 9D, respectively. Therefore, the distance between camera 5A(1) and camera 5A(2) is also equal to "distance A."

[0030] The coating head 6 is composed of a coating liquid supply port 21 for taking in the coating liquid, a liquid reservoir 22 for storing the coating liquid supplied from the coating liquid supply port 21, and coating liquid discharge ports 23A to 23D for discharging the coating liquid, which are at the ends of flow paths branching off from the liquid reservoir 22. The liquid reservoir 22 is provided to ensure a uniform amount of coating in the coating width direction.

[0031] A more specific method for forming a coating film by the coating film forming method according to the first embodiment will now be described. Two cameras 5 (5A, 5B) are installed in the coating width direction, and capture images of patterns 11A and 11B on film substrate 10 during transport. Although two area cameras are installed in the first embodiment, a line scan camera may also be used to capture images over a wide range in the coating width direction of film substrate 10. Alternatively, images may be captured periodically using a strobe.

[0032] The expansion / contraction rate of film substrate 10 is detected by comparing distance B calculated from the position of pattern 11B photographed by cameras 5 (5A, 5B) with distance A between cameras 5. Figure 3 shows different cases of patterns photographed by cameras 5A(1) and 5A(2). A pattern included in pattern sequence 13A is photographed in imaging area 17A of camera 5A(1), and a pattern included in pattern sequence 13D is photographed in imaging area 17B of camera 5A(2).

[0033] In the case of Figure 3A, pattern 11B is located at the center of the coating width of each of imaging areas 17A and 17B, and the distance B between the two patterns 11B is equal to the distance A between camera 5A(1) and camera 5A(2). This is a state in which no expansion or contraction occurs in the coating width direction of film substrate 10. In this case, there is no need to adjust the conveying tension.

[0034] In the case of Figure 3B, each pattern 11B in imaging areas 17A and 17B is displaced in the same direction from the center of the coating width by the same distance (displacement amount X). In this case, since the amount of displacement of the two patterns 11B is the same, the distance B between the two patterns 11B is equal to the distance A between camera 5A(1) and camera 5A(2), and in this case too, there is no expansion or contraction of the film substrate 10 in the coating width direction. However, because the film substrate 10 as a whole is displaced by the displacement amount X, it is necessary to correct the displacement in the coating width direction.

[0035] In the case of Figure 3C, pattern 11B in imaged area 17A is shifted upward by a distance b1 from the center of the coating width within the area, and pattern 11B in imaged area 17B is shifted downward by a distance b2 from the center of the coating width within the area. As a result, distance A is smaller than distance B. This indicates that film substrate 10 tends to stretch in the coating width direction. The expansion / contraction ratio can be calculated by 100 x (distance B - distance A) ÷ distance A.

[0036] In the case of Figure 3D, pattern 11B in image capture area 17A is shifted downward by a distance b3 from the coating width within the area, and pattern 11B in image capture area 17B is shifted upward by a distance b4 from the coating width within the area. As a result, distance A is greater than distance B. This indicates that film substrate 10 is tending to shrink in the coating width direction.

[0037] In the examples of FIGS. 3C and 3D, the deviation amount X in the coating width direction of the entire film substrate 10 is 0, but cases where X≠0 are also possible in these patterns.

[0038] Although distance B is designed to be the same value as distance A, the film substrate 10 expands and contracts due to heat and tension during the formation of patterns 11A and 11B, resulting in different values. Even within the same film substrate 10, the expansion rate often varies by 0.01% at different locations along its length. For example, if a 500-mm-wide film substrate has an expansion rate of 0.05%, the expansion rate at both ends is 500 mm × 0.05% = 250 μm. This means that if 300-μm square patterns 11A and 11B are formed at a 500-μm square pitch, the coating position at the substrate edge will be shifted by 250 μm. In this case, pattern 11B cannot be completely covered, and the intended characteristics of pattern 11B cannot be achieved. Therefore, in the process of forming a pattern assembly (semiconductor device) containing multiple patterns 11A and 11B in a small area, the misalignment of the coating film due to expansion and contraction can cause malfunctions.

[0039] Therefore, it is preferable to detect the expansion / contraction rate of the film substrate 10 in the coating width direction and correct the expansion / contraction rate in the coating width direction by changing the conveying tension in accordance with the expansion / contraction rate.

[0040] The expansion / contraction rate is detected by comparing the aforementioned distance A and distance B. For example, suppose that before coating, the film substrate 10 is conveyed at a conveying tension of 30 N and the image taken by camera 5A shows that the distance A is 200.000 mm and the distance B is 200.200 mm. In this case, with distance A as the reference, the expansion / contraction rate of the film substrate 10 is 100 × (distance B - distance A) ÷ distance A = +0.10%, and it can be detected that the film substrate 10 is stretched in the coating width direction.

[0041] The conveying tension of the film substrate 10 as it passes through the coating head is controlled according to this expansion / contraction rate and the physical properties of the film substrate 10 (how much the expansion / contraction rate changes when the conveying tension is changed). That is, the current set tension value is increased or decreased according to the detected expansion / contraction rate, and the rotation speed of the tension-controlling feed rolls 3A and 3B is controlled to increase or decrease so as to approach the new set tension.

[0042] The film substrate 10 unwound from the unwinding section 1 is sandwiched between a tension-adjusting feed roll 3A and a tension-adjusting nip roll 4A, and the conveying tension between them is measured by a tension meter 2A. If the conveying tension measured by the tension meter 2A is lower than the set tension, the rotation speed of the unwinding section 1 is faster than the rotation speed of the tension-adjusting feed roll 3A, causing the film substrate 10 to slacken (assuming the feed rolls 3A and 3B have the same diameter). In such a case, slowing the rotation speed of the unwinding section 1 reduces the amount of film substrate 10 unwound per unit time, thereby eliminating the slack between the unwinding section 1 and the tension-adjusting feed roll 3A and increasing the conveying tension. Conversely, if the conveying tension is too high, increasing the rotation speed of the unwinding section 1 increases the amount of film substrate 10 unwound per unit time, causing the conveying tension between the unwinding section 1 and the tension-adjusting feed roll 3A to decrease. In this way, the tension value measured by the tension meter 2A is controlled to approach the set tension.

[0043] The conveying tension of the film substrate 10 as it passes through the coating head 6 is increased or decreased by the feed rolls 3A and 3B and the nip rolls 4A and 4B. To increase the conveying tension, the rotational speed of the feed rolls 3A (and nip roll 4A) is slowed down, based on the feed amount of the film substrate 10 nipped by the feed rolls 3B and nip roll 4B. This reduces the amount of film substrate 10 passing through the feed rolls 3A per unit time, and the film substrate 10 between the feed rolls 3A and 3B is pulled, increasing the conveying tension. Conversely, to decrease the conveying tension, the rotational speed of the feed rolls 3A and nip roll 4A can be increased. In this way, the conveying tension is changed, and the rotational speeds of the feed rolls 3A and 3B and the nip rolls 4A and 4B are adjusted so that the desired conveying tension is reached when the portion of the film substrate 10 imaged by the camera 5A is conveyed to the coating head. At this time, since changing the speed of the feed roll 3A may cause the conveying tension immediately after the unwinding section 1 to fluctuate, the unwinding section 1 adjusts the unwinding speed so that the tension value detected by the tension meter 2A becomes the set value.

[0044] Similarly, the tension between the feed roll 3B and the winding section 8 is measured by a tension meter 2C, and the conveying tension is controlled by increasing or decreasing the rotation speed of the tension-controlling feed roll 3B and the winding section.

[0045] The method for controlling the conveying tension is not limited to this method, and known methods such as a suction roll or a dancer roll may also be used.

[0046] The control method for correcting the expansion / contraction rate may be, for example, a stepwise correction control method such as "when a positional deviation caused by the film substrate being stretched by +0.02% or more in the coating width direction is detected, the set tension between the feed rolls 3A and 3B is reset to about 6 N higher, and when the expansion / contraction (stretching) rate returns to less than +0.02% after transporting the film substrate 10 for a while, the set tension is returned to its original value." The expansion / contraction rate used for control is calculated from an image captured by the camera 5A, and therefore may contain measurement errors. Therefore, it is preferable to use the average value detected several times.

[0047] There are no restrictions on the size or shape of pattern 11B captured by camera 5A as long as it can be detected within the field of view of the camera. The expansion / contraction ratio may also be calculated from the relative positional relationship between pattern 11B and the wiring of the semiconductor device on pattern row 13 on which pattern 11B is formed.

[0048] When the conveying tension is increased, the film substrate 10 stretches in the longitudinal (conveying) direction and shrinks in the coating width direction. Furthermore, when the conveying tension is decreased, the tendency for shrinkage in the coating width direction is alleviated compared to the original conveying tension. The conveying tension and the expansion / contraction rate of the film substrate 10 are roughly proportional to each other, but the extent to which the expansion / contraction rate of the film substrate 10 changes when the conveying tension is changed by a certain amount depends on the material and thickness of the film substrate 10. Therefore, to correct the detected expansion / contraction rate of the film substrate 10, the extent to which the conveying tension should be changed must be determined based on the film substrate 10 being used. For example, if the conveying tension of a 500 mm wide film substrate 10 is increased by 30 N, the film substrate 10 will shrink by 0.1% in the coating width direction. If the conveying tension is increased by 30 N from the 30 N conveying tension used to detect the shrinkage rate before coating, the distance B can be reduced by approximately 0.1% by conveying the film substrate 10 at a tension of 60 N, which is an increase of 30 N. It is preferable to control the conveying tension so that the timing (seconds) at which the conveying tension reaches 60 N occurs after the distance (mm) of the film substrate 10 between the camera 5A and the coating head 6 divided by the film conveying speed (mm / second), based on the time at which the film substrate 10 is imaged by the camera 5A.

[0049] With a typical device configuration, the conveying tension can be changed from 20 N to 60 N. It is preferable that the film substrate 10 is a film substrate whose expansion / contraction rate in the coating width direction changes by 0.01% or more when the conveying tension is changed from 20 N to 60 N. With such a film substrate, the effect of correcting the expansion / contraction rate described above can be more significantly achieved.

[0050] The film substrate 10 is continuously transported, and the coating is also continuously performed. During this process, the expansion / contraction rate of the film substrate 10 changes little by little, so the above-mentioned control is performed periodically, for example, in accordance with the timing when the film substrate 10 passes through one area of ​​the semiconductor device 12.

[0051] When detecting the expansion / contraction ratio using the camera 5 (5A, 5B), if, for example, an image cannot be captured or the distance B cannot be calculated from the captured image, the device may be stopped as an abnormality, or the set tension may be maintained while the material flows. Also, if the distance cannot be calculated several times in a row, the device may be stopped as an abnormality.

[0052] In this way, while periodically correcting the expansion / contraction rate of film substrate 10, coating is performed in two or more rows of stripes by coating head 6, and the coating film is dried in a drying oven to form a striped coating film. Thereafter, film substrate 10 is wound up by winding unit 8.

[0053] According to the manufacturing method of the wireless communication device according to the first embodiment described above, it is possible to form a stripe-shaped coating film with high positional accuracy and high production efficiency on a substrate having a pattern whose expansion and contraction rate varies due to heat and transport tension.

[0054] (Embodiment 2) 4 is a schematic diagram showing an overview of a coating film forming method according to embodiment 2 of the present invention. The difference from the device configuration described above in embodiment 1 is that camera 5B is positioned immediately after coating. That is, in embodiment 1, an image of film substrate 10 being transported before coating is taken, and expansion / contraction is corrected at the time of coating, but in embodiment 2, an image of film substrate 10 immediately after coating is taken, and the transport tension is controlled assuming that the expansion / contraction rate of film substrate 10 that has not yet been coated is also approximately the same.

[0055] 5 is a schematic plan view showing an example of a method for forming a coating film according to a second embodiment of the present invention. In this second embodiment, pattern rows 13A to 13D are covered with striped coating films 20A to 20D, respectively. Focusing on any two of the pattern rows (these will be referred to as the "first pattern row" and the "second pattern row," and the coating films corresponding to these pattern rows will be referred to as the "first coating film" and the "second coating film"), the expansion / contraction rate in the coating width direction of the film substrate is detected from the relationship between the "distance A'" between the first and second coating films and the "distance B" between the first and second pattern rows on the film substrate 10.

[0056] The two cameras 5B(1) and 5B(2) are provided downstream of the coating head 6, and capture images of the pattern array after the coating film has been formed in order to detect the above-mentioned "distance B."

[0057] 5, pattern sequence 13A captured by camera 5B(1) is the first pattern sequence, and pattern sequence 13D captured by camera 5B(2) is the second pattern sequence. The centers of the pattern sequences are center positions 14A and 14D, respectively, and the distance 15 between them is the above-mentioned "distance B."

[0058] Furthermore, when the coating film formed to cover the first pattern row is the first coating film, and the coating film formed to cover the second pattern row is the second coating film, and the center positions of each coating film in the coating width direction are center positions 18A and 18D, respectively, the distance 19 between them is the above-mentioned ``distance A'''.

[0059] The installation positions of camera 5B(1) and camera 5B(2) in the short direction of film substrate 10 correspond to the above-mentioned center positions 18A and 18D, respectively. Therefore, the distance between camera 5B(1) and camera 5B(2) is also equal to "distance A'."

[0060] A specific method for detecting the expansion / contraction rate in the coating width direction of film substrate 10 in this second embodiment will be described. Fig. 6 is a diagram showing different cases of patterns captured by camera 5B(1) and camera 5B(2). The image capturing area 17A of camera 5B(1) captures a pattern included in pattern array 13A, namely, first coating film 20A, and the image capturing area 17B of camera 5B(2) captures a pattern included in pattern array 13D, namely, second coating film 20D.

[0061] In the case of Figure 6A, pattern 11B is located at the center of the coating width of each of imaging areas 17A and 17B, and the distance B between the two patterns 11B is equal to the distance A' between camera 5B(1) and camera 5B(2). This is a state in which no expansion or contraction occurs in the coating width direction of film substrate 10. In this case, adjustment of the conveying tension is not necessary.

[0062] In the case of Figure 6B, each pattern 11B in imaging areas 17A and 17B is displaced from the center of the coating width by the same distance (displacement amount X') in the same direction. In this case, since the amount of displacement of the two patterns 11B is the same, the distance B between the two patterns 11B is equal to the distance A' between camera 5B(1) and camera 5B(2), and in this case too, there is no expansion or contraction of the film substrate 10 in the coating width direction. However, because the film substrate 10 as a whole is displaced by the displacement amount X', it is necessary to correct the positional displacement in the coating width direction.

[0063] In the case of Figure 6C, pattern 11B in imaged area 17A is shifted upward by a distance b1' from the center of the coating width within the area, and pattern 11B in imaged area 17B is shifted downward by a distance b2' from the center of the coating width within the area. As a result, distance A' is smaller than distance B. This indicates that film substrate 10 tends to stretch in the coating width direction. The expansion / contraction ratio can be calculated by 100 x (distance B - distance A') ÷ distance A'.

[0064] In the case of Figure 6D, pattern 11B in image capture area 17A is shifted downward by a distance b3' from the coating width within the area, and pattern 11B in image capture area 17B is shifted upward by a distance b4' from the coating width within the area. As a result, distance A' is greater than distance B. This indicates that film substrate 10 is tending to shrink in the coating width direction.

[0065] In the examples of FIGS. 6C and 6D, the deviation amount X' in the coating width direction of the entire film substrate 10 is 0, but it is also possible that X'≠0 in these patterns.

[0066] Although distance B is designed to be the same as distance A', the film substrate 10 expands and contracts due to heat and tension during the formation of patterns 11A and 11B, resulting in different values. Even within the same film substrate 10, the expansion rate often varies by 0.01% at different locations along its length. For example, if a 500-mm-wide film substrate has an expansion rate of 0.05%, the expansion rate at both ends will be 500 mm × 0.05% = 250 μm. For example, if 300-μm square patterns 11A and 11B are formed at a 500-μm square pitch, the coating position at the substrate edge will be shifted by 250 μm, preventing the complete coverage of pattern 11B and the intended characteristics of pattern 11B from being achieved. Therefore, in the process of forming a pattern assembly (semiconductor device) containing multiple patterns 11A and 11B in a small area, the misalignment of the coating film due to expansion and contraction can cause malfunctions.

[0067] Therefore, it is preferable to detect the expansion / contraction rate of the film substrate 10 in the coating width direction and correct the expansion / contraction rate in the coating width direction by changing the conveying tension in accordance with the expansion / contraction rate.

[0068] The expansion / contraction rate is detected by comparing the above-mentioned distance A' with distance B. For example, suppose that when the film substrate 10 is transported at 30 N before coating and an image is taken with camera 5B, the distance A' is 200.000 mm and the distance B is 200.200 mm. In this case, with distance A' as the reference, the expansion / contraction rate of the film substrate 10 is 100 × (distance B - distance A') ÷ distance A' = +0.10%, and it can be detected that the film substrate 10 is stretched in the coating width direction.

[0069] The method for correcting the expansion / contraction ratio is the same as in the first embodiment except for the timing of correction. In the second embodiment, it is preferable to correct the expansion / contraction ratio as soon as possible after the expansion / contraction ratio is detected. This is because the expansion / contraction ratio of the film substrate 10 immediately after coating is detected and corrected on the assumption that the expansion / contraction ratio immediately before that is also about the same. Also, for the same reason, it is preferable to install the camera 5B in FIG. 4 as close as possible to the coating location.

[0070] According to the method for manufacturing a wireless communication device according to the second embodiment described above, similar to the first embodiment, it is possible to form a striped coating film at a desired position on a substrate with high positional accuracy and high production efficiency.

[0071] (Embodiment 3) The coating film forming method according to the third embodiment of the present invention is a coating film forming method as described in the first and second embodiments, which further includes, during the transport of the film substrate, a step of detecting the amount of positional deviation of the pattern in the coating width direction relative to the coating position, and a step of correcting the position of the coating head or the film substrate in the coating width direction according to the amount of positional deviation.

[0072] As described above in the first and second embodiments, the striped coating films 20A-20D can be formed with good positional accuracy by correcting the expansion / contraction rate of the film substrate 10 using the conveying tension. However, if there is a misalignment between the coating head 6 and the film substrate 10 in the coating width direction, the amount of misalignment can be detected, as shown by the misalignment amount X in Fig. 3 and the misalignment amount X' in Fig. 6, but it cannot be made zero by changing the conveying tension.

[0073] 7 is a schematic diagram showing an example of an adjustment mechanism for moving the coating head in the coating width direction, which is used in the coating film forming method according to embodiment 3. Position correction is performed by an adjustment mechanism 41 that is installed directly below the head and is capable of moving in the coating width direction by the amount of deviation X or X'. As long as the adjustment mechanism 41 is configured to store position information and move the entire coating head with high positional accuracy, any known system can be used, such as a slider system using a linear motor or a system using a rotary motor and a ball screw.

[0074] Furthermore, since it is only necessary to correct the amount of relative positional misalignment between the coating head 6 and the film substrate 10 in the coating width direction, the position of the film substrate 10 in the coating width direction may be corrected while the coating head 6 is fixed. However, if the amount of positional misalignment between the coating head 6 and the film substrate 10 in the coating width direction is large, quickly correcting the position of the film substrate 10 will cause wrinkles in the film substrate 10, making it more likely that coating defects will originate from the wrinkles. On the other hand, gradual correction will take time, so it is preferable to correct the position of the coating head 6 in the coating width direction.

[0075] The coating head 6 equipped with the adjustment mechanism 41 can be used in place of the coating head 6 shown in the embodiment 1 or 2. The timing for correcting the positional deviation is preferably the same as the timing for correcting the expansion / contraction rate of the film substrate.

[0076] In methods where coating or printing is performed by contacting the film substrate 10, such correction methods can cause defects such as wrinkles on the film substrate 10, bleeding of the coating film, and fading. However, in the case of slit die coating, dispenser method, and inkjet method, which allow coating without contacting the substrate while maintaining a certain clearance, these methods can be applied without affecting the coating film or film substrate 10.

[0077] According to the manufacturing method for a wireless communication device of the third embodiment described above, not only can the expansion / contraction rate of the film substrate in the coating width direction be corrected, but also the position of the film substrate in the coating width direction can be corrected, so that a stripe-shaped coating film can be formed at a desired position on the substrate with higher positional accuracy and higher production efficiency.

[0078] (Fourth embodiment) A coating film forming method according to a fourth embodiment of the present invention is a coating film forming method as described in the first to third embodiments, in which a plurality of stripe-shaped coating films are formed so as to have different widths.

[0079] 9 is a schematic plan view showing an example of a method for forming a coating film according to the fourth embodiment of the present invention. Pattern 11A is intended to be a semiconductor element with p-type characteristics, and patterns 11B and 11B' are intended to be semiconductor elements with n-type characteristics. Patterns 11B and 11B' differ in size at least in the width direction, and are covered with coating films 24A and 24B of different widths, respectively.

[0080] If patterns 11B and 11B' are formed with the same coating width, a narrow coating width will not completely cover pattern 11B'. On the other hand, a wide coating width will result in the pattern 11B spanning over to the adjacent pattern 11A. As mentioned above, the coating film contains an electron-donating material to obtain an n-type semiconductor element. If only a portion of pattern 11B' is covered with the coating film, electrons will not be donated to the entire pattern, resulting in unintended characteristics. Similarly, pattern 11A is intended to be a p-type semiconductor element, but if the electron-donating material is formed across part of the pattern, it will result in unintended characteristics. Therefore, when forming striped coating films on a substrate with patterns 11B and 11B' of different sizes, it is preferable to form coating films of different widths.

[0081] When multiple patterns formed on a substrate are to become semiconductor elements, they may be composed of patterns in which the channel regions to be formed are the same size, but it is preferable to have two or more patterns in which the channel regions to be formed are different in size. The drive current value depends on the channel width and channel length. For example, when circuits with different functions, such as a rectifier circuit and a memory circuit, are formed within the substrate, different drive current values ​​must be obtained. Therefore, by designing the channel width and channel length to be different for each circuit pattern, the desired drive current value can be obtained for each pattern.

[0082] (Embodiment 5) The method for forming a coating film according to the fifth embodiment of the present invention is a method for forming a coating film as described in the first to fourth embodiments, in which an overcoat layer is formed using a plurality of types of coating liquids.

[0083] 10 is a schematic cross-sectional view showing an example of a coating head used in a coating film forming method according to a fifth embodiment of the present invention. To form an overcoat layer using two types of coating liquids, coating liquids A and B are supplied from discharge supply ports 21A and 21B, respectively, and discharged from coating liquid discharge ports 25A and 25B via liquid reservoirs 22A and 22B, respectively, and applied to desired positions to form multiple types of coating films. Although coating may be performed using two or more separate coating heads, it is preferable to coat multiple layers with a single coating head, as this facilitates control of the coating width direction as described in Example 3.

[0084] By forming an overcoat layer using two or more types of coating liquids, it is possible to adjust the transistor characteristics of a semiconductor element with p-type or n-type characteristics.

[0085] In an n-type semiconductor element, the coating film contains an electron-donating material, and by changing the type and amount of this material, it is possible to adjust the characteristics of the n-type semiconductor element, and as described above, it is possible to obtain the semiconductor element characteristics required for each of the rectifier circuit, memory circuit, etc. In addition, in a p-type semiconductor element, it is also possible to adjust the characteristics of the p-type semiconductor element by applying an overcoat layer to the coating film using a coating liquid containing an electron-accepting material.

[0086] According to this method, it is possible to form one or more rows of coating films using two or more types of overcoat materials that differ in the type and / or content ratio of the electron-donating compound, or to form one or more rows of coating films using an overcoat material containing an electron-donating compound and an overcoat material containing an electron-accepting compound.

[0087] (semiconductor element) The coating film forming method according to the embodiment of the present invention can be suitably applied to a method for manufacturing a semiconductor device in which the pattern is a semiconductor element and the coating film is an overcoat material that covers the semiconductor element.

[0088] FIG. 8 is a schematic cross-sectional view showing an example of a method for manufacturing a semiconductor element (transistor), which is one of the elements that constitute a semiconductor device.

[0089] First, as shown in Figure 8(a), a lower conductive film 31 is formed on a film substrate 10. Examples of methods for forming the lower conductive film 31 include resistance heating vapor deposition, electron beam deposition, sputtering, plating, and CVD. Another example is a method in which a paste containing a conductor and a photosensitive organic component is applied to a substrate by a known application method such as an inkjet method, printing, ion plating, blade coating, slit die coating, screen printing, bar coating, casting, print transfer, or immersion and pulling method, and then the applied film is dried to remove the solvent.

[0090] As the material for the lower conductive film 31, silver, copper and gold are preferred from the viewpoint of conductivity, and silver is more preferred from the viewpoint of cost and stability.

[0091] Next, as shown in FIG. 8(b), the lower conductive film 31 is patterned to form a gate electrode 32 and a lower electrode wiring 33 including a connection portion with the antenna. Patterning by known photolithography is preferred. If the lower conductive film 31 is not photosensitive, known patterning using a photoresist can be used. If the lower conductive film 31 is formed by applying a paste containing a conductor and a photosensitive organic component onto a substrate, the photosensitive conductive film can be photolithographically processed. In this way, the gate electrode 32 and lower electrode wiring 33, which are conductive patterns, are formed on the film substrate 10.

[0092] 8(c), a gate insulating layer 34 is formed on the gate electrode 32 and the lower electrode wiring 33. The material used for the gate insulating layer is not particularly limited, but examples thereof include inorganic materials such as silicon oxide and alumina; organic materials such as polyimide, polyvinyl alcohol, polyvinyl chloride, polyethylene terephthalate, polyvinylidene fluoride, polysiloxane, and polyvinylphenol (PVP); and mixtures of inorganic material powder and organic material.

[0093] The method for producing the gate insulating layer is not particularly limited, and examples thereof include a method in which a raw material composition is applied to a substrate on which a gate electrode has been formed, dried, and the resulting coating film is heat-treated as necessary. Examples of the application method include known application methods such as blade coating, slit die coating, screen printing, bar coater, casting, print transfer, immersion and pulling, and inkjet printing.

[0094] Next, as shown in Fig. 8(d), the gate insulating layer 34 on the lower electrode wiring 33 is removed to form a contact hole. This is performed on the portion connecting the lower electrode wiring 33 and the upper electrode wiring 38. If the gate insulating layer 34 is obtained using a paste containing a photosensitive organic component in the step of Fig. 8(c), the contact hole can be formed by patterning using photolithography.

[0095] Next, as shown in FIG. 8(e), an upper conductive film 35 containing a conductor and a photosensitive organic component is formed on the gate insulating layer 34. The organic binder containing the photosensitive organic component allows for patterning of the electrodes by photolithography without using a resist, further improving productivity. Examples of methods for forming this upper conductive film 35 include coating by a known coating method such as blade coating, slit die coating, screen printing, bar coating, casting, print transfer, dipping and pulling, or inkjet printing, followed by drying the coating to remove the solvent.

[0096] Next, as shown in Figure 8(f), the upper conductive film 35 is patterned to form a source electrode 36, a drain electrode 37, and an upper electrode wiring 38. These are exposed from the backside through the film substrate 10 using the gate electrode 32 as a mask, so that the source electrode 36 and the drain electrode 37 can be aligned with high precision without alignment. However, they may also be formed in the same manner as the gate electrode 32 and the lower electrode wiring 33 in Figure 4(b).

[0097] Next, an organic semiconductor layer 39 is formed between the source electrode 36 and the drain electrode 37 (FIG. 8(g)). The material used for the organic semiconductor layer is an organic semiconductor and / or a carbon material. Examples of carbon materials include carbon nanotubes (CNTs), graphene, and fullerenes, but CNTs are preferred in terms of their suitability for coating processes and high mobility. Furthermore, CNTs with a conjugated polymer attached to at least a portion of their surface (hereinafter referred to as CNT composites) are particularly preferred because they have excellent dispersion stability in solution and can achieve high mobility.

[0098] The organic semiconductor layer 39 can be formed by dry methods such as resistance heating evaporation, electron beam deposition, sputtering, and CVD. However, a coating method is preferred from the viewpoint of manufacturing costs and suitability for large areas. Examples of coating methods include blade coating, slit die coating, screen printing, bar coating, molding, print transfer, dipping and pulling, and inkjet printing. Step (g) may be performed before steps (e) and (f). Thus, the organic semiconductor layer 29 is formed on the gate insulating layer 34.

[0099] Finally, (h) an overcoat layer 40 is formed so as to cover the organic semiconductor layer 39. By forming the overcoat layer 40, for example, it is possible to convert a semiconductor element that normally exhibits p-type semiconductor characteristics into a semiconductor element that exhibits n-type semiconductor characteristics, or to adjust the p-type semiconductor characteristics.

[0100] When converting the overcoat layer 40 into a semiconductor device exhibiting n-type semiconductor characteristics, it is preferable that the overcoat layer 40 contain an electron-donating compound having at least one selected from nitrogen atoms and phosphorus atoms. Any organic compound may be used as such an organic compound, including, for example, amide compounds, imine compounds, aniline compounds, nitrile compounds, and alkylphosphine compounds. When adjusting p-type semiconductor characteristics, it is preferable that the overcoat layer 40 contain an electron-accepting compound, which may be an inorganic compound such as a metal oxide or an organic compound such as p-chloranil. Examples of such organic compounds include those having a structure in which at least two groups selected from halogen atoms, carbonyl groups, cyano groups, nitro groups, sulfinyl groups, sulfonyl groups, and imide groups are bonded to one carbon-carbon double bond or one conjugated system.

[0101] The overcoat layer 40 preferably further contains a polymer. This is because the polymer not only improves the oxygen blocking properties but also enables film formation by drying under mild annealing conditions and improves adhesion in the process of forming the overcoat layer 40 by a coating method. Examples of polymers contained in the overcoat layer 40 include acrylic resins, methacrylic resins, olefin polymers, cycloolefin polymers, polystyrene, polysiloxane, polyimide, polycarbonate, vinyl alcohol-based resins, and phenol-based resins.

[0102] The overcoat layer 40 may contain other compounds in addition to the electron donor compound, electron acceptor compound, and polymer. Examples of other compounds include thickeners and thixotropic agents for adjusting the viscosity and rheology of the solution when the overcoat layer 40 is formed by coating.

[0103] The thickness of the overcoat layer 40 is more preferably 5.0 μm or more. A film thickness in this range improves oxygen blocking properties and makes it easier to suppress fluctuations in transistor characteristics. The upper limit of the thickness of the overcoat layer 40 is preferably 30 μm or less. A film thickness in this range improves the flexibility of the overcoat layer 40.

[0104] Furthermore, setting the upper limit of the thickness of the overcoat layer 40 to 30 μm or less is particularly effective when multiple semiconductor devices are formed on a long film substrate. When the film substrate 10 is wound into a roll, the overcoat layers 40 are wound so that they overlap. During this process, tightening of the roll occurs over time, causing the overcoat layer 40 to rub and become more susceptible to peeling. However, setting the thickness of the overcoat layer 40 to 30 μm or less is preferable because it maintains the flexibility, bendability, and adhesion of the overcoat layer 40 and prevents peeling. Furthermore, setting the film thickness within this range also prevents gauge bands, which occur when the overcoat layers 40 are wound while overlapping.

[0105] <Semiconductor device> The semiconductor elements described above can be applied to various semiconductor devices. Examples include analog circuits such as rectifier circuits, logic circuits such as NOT circuits, NAND circuits, NOR circuits, AND circuits, and OR circuits, combinational circuits and sequential circuits using these circuits, and integrated circuits such as memories, microprocessors, and logic ICs. Furthermore, such semiconductor devices can be used in various electronic devices. Because the semiconductor device of the present invention is formed on a flexible film, it is resistant to bending and stretching, and can be applied to ICs in various electronic devices, wireless communication devices such as RFID tags, display applications, various sensor applications, and tamper detection systems.

[0106] <Wireless communication device> The wireless communication device is a device that communicates information using radio waves, such as a product tag, an anti-shoplifting tag, various tickets, or a smart card.

[0107] The wireless communication device includes at least the semiconductor device and an antenna. More specifically, the wireless communication device includes, for example, a power generation unit that rectifies an external modulated wave signal received by the antenna and supplies power to each unit; a demodulation circuit that demodulates the modulated wave signal and sends it to a control circuit; a modulation circuit that modulates data sent from the control circuit and sends it to the antenna; and a control circuit that writes the data demodulated by the demodulation circuit to a memory circuit and reads the data from the memory circuit and sends it to the modulation circuit, with each circuit unit electrically connected. Note that the memory circuit may further include a read-only memory unit to which information is written during manufacturing, or a non-volatile rewritable memory unit such as an EEPROM (Electrically Erasable Programmable Read-Only Memory) or FeRAM (Ferroelectric Random Access Memory). [Explanation of symbols]

[0108] 1: Film unwinding section 2A~2C: Tension meter 3A, 3B: Tension adjustment feed roll 4A, 4B: Nip roll for tension adjustment 5A, 5A(1), 5A(2), 5B, 5B(1), 5B(2): Camera 6: Application head 7: Drying oven 8: Film winding section 9A, 9D: Center position of the outlet 10: Film substrate 11A, 11B, 11B': Pattern 12: Semiconductor device 13A, 13B, 13C, 13D: Pattern row 14A, 14D: Center position of pattern row 15: Distance between the first pattern row and the second pattern row (distance B) 16: Distance between the first outlet and the second outlet of the coating head (distance A) 17A, 17D: Camera imaging area 18A, 18D: Center of coating film in the width direction 19: Distance between the first coating film and the first coating film (distance A') 20A, 20B, 20C, 20D, 24A, 24B: Coating film 21, 21A, 21B: Coating liquid supply port 22,22A,22B:Liquid reservoir 23A, 23B, 23C, 23D, 25A, 25B: Coating fluid discharge port 31: Lower conductive film 32: Gate electrode 33: Bottom electrode wiring 34: Insulating layer 35: Upper conductive film 36: Source electrode 37: Drain electrode 38: Upper electrode wiring 39: Organic semiconductor layer 40: Overcoat layer 41: Adjustment mechanism

Claims

1. A coating film forming method for forming a coating film in a stripe shape over two or more rows of a pattern formed in a longitudinal direction of a long film substrate, while transporting the film substrate, comprising: During the transport of the film substrate, detecting an expansion / contraction rate in a coating width direction of the film substrate; and correcting the expansion / contraction rate in the coating width direction by changing the transport tension of the film substrate in accordance with the expansion / contraction rate. Coating film forming method.

2. 2. The method for forming a coating film according to claim 1, wherein the film substrate is a film substrate whose expansion / contraction rate in the coating width direction changes by 0.01% or more when the transport tension is changed from 20N to 60N.

3. using a coating head having a plurality of discharge ports that coats the material so as to cover two or more rows of the pattern in a stripe shape; at least, forming a first coating film so as to cover a first pattern array on the film substrate by coating from a first discharge port of the coating head; a second coating film is formed by coating from a second discharge port of the coating head so as to cover the second pattern array on the film substrate; A coating film forming method, Before starting coating, a distance B between the first pattern array and the second pattern array on the film substrate is measured; The expansion / contraction rate of the film substrate in the coating width direction is detected by comparing the distance B with the distance A between the first discharge port and the second discharge port of the coating head. The method for forming a coating film according to claim 1 .

4. using a coating head having a plurality of discharge ports that coats the material so as to cover two or more rows of the pattern in a stripe shape; at least, forming a first coating film so as to cover a first pattern array on the film substrate by coating from a first discharge port of the coating head; a second coating film is formed by coating from a second discharge port of the coating head so as to cover the second pattern array on the film substrate; A coating film forming method, At a position at a predetermined distance downstream from the application portion from the discharge port, measuring a distance A' between the applied first coating film and the applied second coating film, and a distance B between the first pattern array and the second pattern array on the film substrate; The distance B is compared with the distance A' to detect the expansion / contraction rate of the film substrate in the coating width direction. The method for forming a coating film according to claim 1 .

5. During the transport of the film substrate, detecting a positional deviation of the pattern in a coating width direction relative to a coating position; and correcting the position of the coating head or the film substrate in the coating width direction according to the amount of positional deviation. The method for forming a coating film according to claim 1 .

6. Forming two or more types of coating films with different coating widths. The method for forming a coating film according to claim 1 .

7. 7. The method for forming a coated film according to claim 1, wherein the coating is carried out by any one of a slit die, a dispenser, and an inkjet method.

8. A method for manufacturing a semiconductor device using the coating film forming method according to any one of claims 1 to 6, the pattern is a semiconductor element, the coating film is an overcoat material that covers the semiconductor element; A method for manufacturing a semiconductor device.

9. Using two or more of the above-mentioned overcoat materials having different types and / or content ratios of electron donor compounds, The method for manufacturing a semiconductor device according to claim 8 , wherein one or more rows of coating films are formed.

10. Using an overcoat material containing an electron donor compound and an overcoat material containing an electron acceptor compound, The method for manufacturing a semiconductor device according to claim 8 , wherein one or more rows of coating films are formed.

11. The method for manufacturing a semiconductor device according to claim 8 , wherein the semiconductor device is a wireless communication device.

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