Method, apparatus and electronic device for controlling crystal pulling of crystal pulling furnace

Abstract

To provide a method and an apparatus for controlling crystal pulling in a crystal pulling furnace, and an electronic device.SOLUTION: Determining a current resistance (Rt) of the heater and a total historical operating time (Th) of the heater, determining a resistance difference (DRh) between the current resistance (Rt) and the initial resistance (R0), and determining and storing a temperature compensation value and a pulling speed compensation value of each segment according to the resistance difference (DRh) and the total historical operating time (Th), wherein the initial resistance (L0) is a resistance of the heater, the total length (R0) is a total length of the crystal block, and the unit length (Ld) is a unit length of crystal pulling; During the crystal pulling process, compensating for the preset temperature of the heater and the preset pulling speed of the puller during the growth of each segment according to the temperature compensation value and the pulling speed compensation value of each segment.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to the technical field of semiconductor material manufacturing, and in particular to a method, apparatus and electronics device for crystal pulling control in a crystal pulling furnace. [Background technology]

[0002] In the manufacturing process of semiconductor materials, crystal growth is a critical step that directly affects the quality and performance of the final product. In the crystal growth process, i.e., the crystal pulling process, the pulling speed and temperature are important factors that cause potential defects in the crystal ingot. A crystal pulling furnace includes a furnace body, a heater around the outside of the furnace body, and a puller for pulling the crystal ingot. The speed of the puller for pulling the ingot is called the "pull speed."

[0003] According to Voronkov's V / G theory, too large or too small a V / G value can easily cause point defects. Point defects can severely affect the electrical and optical properties of a crystal, thereby affecting the performance of semiconductor devices. "V" represents the pulling rate (i.e., the pulling speed) of crystal growth, and "G" represents the temperature gradient in the direction of the pulling axis near the solid-liquid interface.

[0004] Among the components of the thermal field of a crystal pulling furnace, the heater is one of the most important. As the furnace's heating source, its performance directly affects the quality and efficiency of crystal growth. However, as the heater's operating time increases, its surface gradually ages and oxidizes, which changes the heat distribution in the heating zone and thereby affects the temperature gradient (G) during the crystal pulling process. At the same time, an aged heater can cause the actual heating temperature curve to differ from the specified heating temperature curve, resulting in changes in the pulling rate (V), which can further affect the crystal properties and defect formation.

[0005] In conventional techniques, corrections are typically made until heater conditions change significantly, resulting in the production of highly imperfect single crystals. This method has significant drawbacks. First, the effects of heater aging and oxidation on crystal growth cannot be predicted in advance, and corrections can only be made after a problem has occurred. This results in yield loss and increases the risk of recurring problems. Furthermore, this method cannot monitor and predict heater aging in real time, introducing uncertainty into the manufacturing process. This makes it difficult to achieve efficient and stable crystal growth. Summary of the Invention

[0006] The objective of the present invention is to provide a method, apparatus, and electronics for crystal pulling control of a crystal pulling furnace, which can achieve real-time monitoring and prediction of heater aging and correct any deviations that may occur during the crystal pulling process, thereby improving the product yield of each crystal pulling process, reducing the probability of repeatable defects, and reducing the uncertainty caused by heater aging, which is beneficial for efficient and stable crystal growth.

[0007] In one aspect, the present invention provides a method for controlling crystal pulling in a crystal pulling furnace, the method comprising: The initial resistance of the heater (R0), the total length of the ingot (L0), and the unit length of the crystal pulling (L d ) is determined, and the total length (L0) is calculated by dividing the unit length (L d ) based on the “n” segments of the pulling length (D n ) and D n represents the nth segment, and The heater's current resistance (R t ) and the total history operating time of the heater (T h ) and determining the total historical operating time (T h ) is the total value of the heater's past operating time, and Current resistance (R t ) and the initial resistance (RO) (DRh ) and Resistance difference (DR h ) and total historical operating time (T h ) and storing a temperature compensation value for each segment; compensating a predetermined temperature of a heater during growth of each segment based on the temperature compensation value of each segment during the crystal pulling process; It has.

[0008] In one embodiment, the resistance difference (DR h ) and total historical operating time (T h ), the temperature compensation value of each segment is determined based on the following formula:

number

[0009] In one embodiment, the method comprises determining the current resistance (R t ) and the initial resistance (RO) (DR h), followed by the step of determining Resistance difference (DR h ) and total historical operating time (T h determining and storing a pull-up speed compensation value for each segment based on the during the crystal pulling process, compensating the predetermined pull rate of the puller during growth of each segment based on the pull rate compensation value for each segment; It further has:

[0010] In one embodiment, the resistance difference (DR h ) and total historical operating time (T h In the step of determining and storing a pull-up speed compensation value for each segment based on the following formula:

number

[0011] In one embodiment, the step of compensating for the predetermined temperature of the heater during growth of each segment and the predetermined pull rate of the puller based on the temperature compensation value and the pull rate compensation value of each segment during the crystal pulling process comprises: Compensating the predetermined temperature of each segment based on the temperature compensation value of each segment, and obtaining and storing the compensated temperature of each segment; Compensating the predetermined pull-up speed of each segment based on the pull-up speed compensation value of each segment to obtain and store a corrected pull-up speed of each segment; During the crystal pulling process, before the target segment starts to be pulled, obtain a corrected temperature and a corrected pull rate of the target segment, and during the growth of the target segment, control the heater to operate according to the corrected temperature and control the puller to operate according to the corrected pull rate. It has the following.

[0012] In one embodiment, the step of compensating for the predetermined temperature of the heater during growth of each segment and the predetermined pull rate of the puller based on the temperature compensation value and the pull rate compensation value of each segment during the crystal pulling process comprises: Before the target segment begins to be pulled, a temperature compensation value and a pull-speed compensation value for the target segment are obtained; correcting the predetermined temperature of the heater and the predetermined pull-speed of the pull-speed device corresponding to the target segment based on the temperature compensation value and the pull-speed compensation value of the target segment to obtain a corrected temperature and a corrected pull-speed during growth of the target segment; When the pulling of the target segment begins, controlling the heater to operate according to the corrected temperature and controlling the pulling device to operate according to the corrected pulling speed. It has the following.

[0013] In one embodiment, the temperature correction factor (A) is less than 1. In one embodiment, the pull speed correction factor (B) is less than 1.

[0014] In one embodiment, the compensation coefficient (K) has a value range of [0.1, 20] and the position coefficient (S) has a value range of [0.2, 0.8].

[0015] In one embodiment, the crystal pulling furnace is operated at an actual loading (Q t ), full loading amount (Q0), and loading rate (q) = Q t / Q0 and Q t and Q0 are in kilograms (kg), and within the value range of the position coefficient (S) of [0.2, 0.8], the value of the position coefficient (S) increases with the increase in the value of the loading rate (q).

[0016] In one embodiment, the crystal pulling furnace has a furnace body and a heater surrounding the furnace body, and the heater has a width from top to bottom (W t ) and the furnace body has a height (W0), heating zone ratio (w) = W t / W0 and W t and W0 are in mm, and within the value range of the compensation coefficient (K) of [0.1, 20], the value of the compensation coefficient (K) decreases with the increase of the value of the heating section ratio (w).

[0017] In one embodiment, the heating zone has a first zone and a second zone, the first zone having a higher temperature than the second zone, the first zone having a height and positioned to cover at least the solid-liquid interface during crystal pulling, and the second zone being positioned above and / or below the first zone and having a temperature that gradually decreases from near to far from the first zone.

[0018] In one embodiment, the method includes, before the step of determining the compensation values, i.e., determining the temperature compensation value and the pull-speed compensation value for each segment, determining a loading rate (q); determining a location coefficient (S) from [0.2, 0.8] in response to a loading rate (q); It further has:

[0019] In one embodiment, the method includes, before the step of determining the compensation values, i.e., determining the temperature compensation value and the pull-speed compensation value for each segment, Determining a heating section ratio (w); determining a compensation factor (K) from [0.1, 20] in response to a heating section ratio (w); It further has:

[0020] In one embodiment, the method includes determining a compensation value, i.e., a resistance difference (DR h ) and total historical operating time (T h The method further includes determining a compensation coefficient (K) and a position coefficient (S) before determining the temperature compensation value and the pull-speed compensation value for each segment based on the calculated temperature and pull-speed compensation values.

[0021] In one embodiment, when the crystal pulling process is completed and the heater is turned off, the heater operating time for the crystal pulling process is obtained and the total historical heater operating time (T h ) can be updated and stored.

[0022] In one embodiment, the initial resistance (R), the total length of the ingot (L), and the unit length of the crystal pulling (L d Before determining the initial resistance (R), the total length of the ingot (L), and the unit length of the crystal pulling (L d ) is input.

[0023] In another aspect, the present invention provides an apparatus for controlling crystal pulling in a crystal pulling furnace, comprising a parameter unit, a compensation calculation unit, a storage unit, and an execution unit.

[0024] The parameter units are the initial resistance of the heater (R0), the total length of the ingot (L0), and the unit length of the crystal pulling (L d ) and determine the total length (L0) by the unit length (L d ) based on the “n” segments of the pulling length (D n ) and D n represents the nth segment, and the current resistance of the heater (R t ) and the total history operating time of the heater (T h ) and determine the total history operating time (T h ) is the total time the heater has been running in the past, and the current resistance (R t ) and the initial resistance (RO) (DR h The compensation calculation unit can be applied to determine the resistance difference (DR h ) and total historical operating time (T h ) to determine a temperature compensation value for each segment based on the temperature compensation value for each segment. The storage unit may be adapted to store at least the temperature compensation value for each segment obtained from the compensation calculation unit. The execution unit may be adapted to compensate for a predetermined temperature of a heater during growth of each segment based on the temperature compensation value for each segment during the crystal pulling process. The compensation calculation unit stores a calculation model for the temperature compensation value.

[0025] The calculation model for the temperature compensation value is to calculate the temperature compensation value of each segment using the following formula:

number

[0026] In one embodiment, the compensation calculation unit further calculates the resistance difference (DR h ) and total historical operating time (T h ) to determine a pull-speed compensation value for each segment based on the pull-speed compensation value for each segment. The storage unit further stores the pull-speed compensation value for each segment obtained from the compensation calculation unit. The execution unit further compensates for a predetermined pull-speed of the puller during growth of each segment based on the pull-speed compensation value for each segment during the crystal pulling process. The compensation calculation unit further stores a calculation model for the pull-speed compensation value.

[0027] The calculation model for the pull-up speed compensation value is to calculate the pull-up speed compensation value of each target segment using the following equation:

number

[0028] In a further aspect, the present invention provides an electronic device having a processor and a memory storing a computer program, the processor executing the computer program thereby performing the above-mentioned steps of the method of the present invention.

[0029] Compared with the prior art, the present application has the following advantages:

[0030] The crystal pulling control method for a crystal pulling furnace of the present application can be applied to every crystal pulling process. Before each crystal pulling process starts, the aging and oxidation level of the heater is measured by the current resistance (R t ) and the initial resistance (RO) (DR h ) and the total history operating time of the heater (T h ) can be estimated in advance based on the V / G ratio (i.e., the ratio of the pull rate to the temperature gradient) and the heater resistance difference (DR h ) and total operating time (T h ) and determine the appropriate compensation value for temperature based on the predicted V / G ratio. Adjustments can be made in advance to predict the V / G ratio. Then, when the crystal pulling process begins, the temperature compensation value corresponding to each pulling segment is reflected in the actual operation of the heater and pulling equipment, thereby compensating the heater for each segment of the ingot and bringing the V / G ratio of each segment as close as possible to the critical value to achieve full or near-full crystal pulling.

[0031] The crystal pulling control method for a crystal pulling furnace of the present application also includes pulling rate compensation. In addition to determining the compensation value for temperature, the compensation value for the pulling rate is also determined by the resistance difference (DR h ) and the total heater operating time (T h ) and can be adjusted in advance to predict the V / G ratio. Then, when the crystal pulling process begins, the compensation values ​​of the temperature and pulling speed corresponding to each pulling segment are simultaneously reflected in the actual operation of the heater and the pulling device, thereby compensating the heater and the pulling device for each segment of the ingot, and making the V / G ratio of each segment as close to the critical value as possible to achieve full or near-full crystal pulling.

[0032] Simultaneous compensation for temperature and pull rate allows for much more flexibility in predicting and adjusting the V / G ratio, providing better correction for the crystal pulling process.

[0033] Therefore, by applying the method of the present application, including compensation for temperature and / or pull rate, real-time monitoring and prediction of heater aging process can be achieved, and temperature and pull rate can be corrected in advance, thereby improving the product yield of the entire crystal pulling process, reducing the probability of defect occurrence, and preventing uncertainties caused by heater aging, thereby achieving highly efficient and stable crystal growth. [Brief explanation of the drawings]

[0034] [Figure 1] 1 illustrates a flow chart of a method of crystal pulling control for a crystal pulling furnace according to one embodiment of the present application. [Figure 2] 10 illustrates a flow chart of a method of crystal pulling control for a crystal pulling furnace according to another embodiment of the present application. [Figure 3] 1 shows a diagram illustrating a simplified configuration of a crystal pulling furnace according to one embodiment of the present application. [Figure 4] 4 illustrates a heating zone of the crystal pulling furnace shown in FIG. 3 according to one embodiment of the present application. [Figure 5] 4 illustrates a heating zone of the crystal pulling furnace shown in FIG. 3 according to another embodiment of the present application. [Figure 6] 5 illustrates an enlarged view of portion A of FIG. 4 according to an embodiment of the present application. [Figure 7] 1 shows a diagram illustrating the temperature variation of a heater according to an embodiment of the present application. [Figure 8] 1 shows a diagram illustrating the variation of the lifting speed of a lifting device according to an embodiment of the present application; [Figure 9] 1 shows a diagram illustrating a control system for a crystal pulling furnace according to an embodiment of the present application. [Figure 10] 1 shows a diagram illustrating an electronic device according to an embodiment of the present application. DETAILED DESCRIPTION OF THE INVENTION

[0035] In order to fully understand the present application, the following description describes the detailed configuration or steps of a crystal pulling control method for a crystal pulling furnace to explain the technical solution of the present application. The implementation of the present application is not limited by specific details known to those skilled in the art. The following describes in detail preferred embodiments of the present application, but the present application may have other embodiments in addition to the detailed description.

[0036] Example embodiments will now be described more fully with reference to the accompanying drawings, which are simplified and not to scale for purposes of clear and easy illustration of examples of the invention.

[0037] example

[0038] 3, the crystal pulling furnace 100 includes a furnace body 101, a heater 102 surrounding the furnace body, and a pulling device 103. The furnace body 101 holds a melt for growing a crystal ingot.

[0039] It should be noted that Voronkov's V / G theory is a theory of defect formation during silicon ingot growth. In this theory, "V" represents the crystal growth pull rate (i.e., the pull speed), which means the speed at which the ingot is pulled from the melt during ingot growth. "G" represents the temperature gradient in the direction of the pull axis near the solid-liquid interface, which means the temperature gradient from the melt to the ingot interface.

[0040] The V / G ratio is an important parameter for determining the type and distribution of point defects in an ingot. This ratio affects the formation and distribution of defects during ingot growth. Regarding the critical value of V / G (ξt), it generally has the following three typical situations:

[0041] V / G is greater than ξt. The vacancy concentration in the crystalline ingot becomes dominant, resulting in the formation of void defects (D defects). Void defects are typically associated with holes or voids in the ingot.

[0042] When V / G is smaller than ξt, the concentration of self-interstitials in the crystalline ingot becomes dominant, resulting in the formation of A / B screw defects (L-pits). These defects typically appear as screw dislocations in the crystalline ingot, affecting the integrity and performance of the ingot.

[0043] When the V / G ratio is equal to a critical value (ξt), the residual interstitial and vacancy concentrations are small, allowing for the growth of an essentially defect-free ingot.

[0044] During crystal growth, approximately 0.0013cm 2 The V / G ratio of 1 / min·K is the critical value for defect-free crystal growth, which was obtained by Voronkov et al. through theoretical and practical calculations. This critical value can be adjusted according to the mean stress within the crystal, which allows for more precise control of the crystal growth conditions and the production of high-quality single-crystal silicon.

[0045] However, in actual situations, as the heater in a crystal pulling furnace operates for an extended period of time, the heater surface gradually ages and oxidizes. This aging and oxidation causes changes in the heat distribution in the heating zone, thereby affecting the temperature gradient (G) during the crystal pulling process. At the same time, the aged heater may also cause a discrepancy between the actual heating temperature curve and the predetermined heating temperature curve, resulting in a change in the pulling rate (V). This can cause the V / G ratio to deviate significantly from the critical value, affecting the quality of the crystal growth and causing defects.

[0046] Furthermore, in the prior art, corrections are usually made only after the heater has undergone large state changes and a very imperfect single crystal has been produced, which means that in the prior art, adjustments to the relevant settings for adjusting the V / G ratio are significantly delayed.

[0047] In view of solving the shortcomings in the prior art, the present application provides a method of crystal pulling control for a crystal pulling furnace, as shown in FIG. 1, the method including at least the following steps: S1: Initial resistance of the heater (R0), total length of the ingot (L0), and unit length of the crystal pulling (L d ) and determine the total length (L0) by the unit length (L d ) based on the “n” segments of the pulling length (D n ) and D n represents the nth segment, S2: Current resistance of the heater (R t ) and the total history operating time of the heater (T h ) and determine the total history operating time (T h ) is the total time the heater has been operating in the past, S3: Current resistance (R t ) and the initial resistance (RO) (DR h ) is determined, S4: Resistance difference (DR h ) and total historical operating time (T h ) and store the temperature compensation value for each segment based on S5: During the crystal pulling process, compensate the predetermined temperature of the heater during growth of each segment based on the temperature compensation value of each segment.

[0048] The total length of the ingot (L0) and the unit length of the crystal pulling (L d ) is in mm. Current resistance (R t ), initial resistance (R0), and their difference (DR h ) is in mΩ. Total operating time (T h ) is in hours (h).

[0049] The crystal pulling control method for a crystal pulling furnace of the present application can be applied to every crystal pulling process. Before each crystal pulling process starts, the aging and oxidation level of the heater is measured by the current resistance (R t ) and the initial resistance (RO) (DR h ) and the total history operating time of the heater (T h ) can be estimated in advance based on the V / G ratio (i.e., the ratio of the pull rate to the temperature gradient) and the heater resistance difference (DR h ) and the total heater operating time (T h ) can be used to determine an appropriate compensation value for temperature. Adjustments can be made in advance to predict the V / G ratio. Then, when the crystal pulling process begins, the compensation value for temperature corresponding to each pulling segment is reflected in the actual operation of the heater, thereby compensating the heater for each segment of the ingot, and bringing the V / G ratio of each segment as close as possible to the critical value to achieve full or near-full crystal pulling.

[0050] In another example, as shown in FIG. 2, step S4 further comprises: h ) and total operating time (T h ) and storing a pull-speed compensation value for each segment.

[0051] Step S5 can further include compensating the predetermined pull rate of the puller during growth of each segment based on the pull rate compensation value of each segment during the crystal pulling process.

[0052] Therefore, the method of crystal pulling control for a crystal pulling furnace of the present application further includes pull rate compensation. In addition to determining the compensation value for temperature, the compensation value for pull rate is also determined by the differential resistance (DR h ) and the total heater operating time (T h ) and can be adjusted in advance to predict the V / G ratio. Then, when the crystal pulling process begins, the compensation values ​​of the temperature and pulling speed corresponding to each pulling segment are simultaneously reflected in the actual operation of the heater and the pulling device, thereby compensating the heater and the pulling device for each segment of the ingot, and making the V / G ratio of each segment as close to the critical value as possible to achieve full or near-full crystal pulling.

[0053] In the example shown in FIG. 2, simultaneous compensation for temperature and pull rate provides much more flexibility in predicting and adjusting the V / G ratio and better correction for the crystal pulling process.

[0054] Therefore, by applying the method of the present application, real-time monitoring and advance prediction of the heater aging process can be achieved, and the temperature and pulling speed can be corrected in advance, thereby improving the product yield of the entire crystal pulling process, reducing the probability of defect occurrence, and preventing the uncertainty caused by heater aging, thereby achieving highly efficient and stable crystal growth.

[0055] In this application, a complete crystal pulling process refers to a process for growing a completed crystal ingot. In this embodiment, the method of crystal pulling control is for controlling the entire crystal pulling process. If multiple crystal ingots are grown consecutively without downtime, the steps of the method in this embodiment only need to be repeated. If the crystal pulling furnace is stopped after growing one completed crystal ingot, the steps of the method in this embodiment end for this crystal pulling process and can be started and executed for the next crystal pulling process.

[0056] In one embodiment, in step S1, the initial resistance (R0) of the heater can be known from the information label or heater specifications, or from actual measurement, and can be entered to confirm the initial resistance (R0) of the heater.

[0057] In one embodiment, when the method in this embodiment is first performed, the initial resistance (R0) of the heater can be input and stored in a database, or the heater device information including the initial resistance (R0) can be stored in a local file. In subsequent operations, the initial resistance (R0) can be determined by retrieving it from the database or the local file. Therefore, the method can further include inputting and saving the initial resistance (R0) before determining the initial resistance (R0).

[0058] In one embodiment, the heater includes an independent controller, which includes a storage device for storing information about the heater's initial resistance (R0). When the method is performed, commands can be sent to the heater's controller, which receives the commands and responds by transmitting information about the initial resistance (R0), thereby allowing the initial resistance (R0) to be determined.

[0059] In one embodiment, in step S1, the total length of the ingot (L0) and the crystal pulling unit length (L d) can be determined by inputting data. Alternatively, an ingot model database can be constructed to store various ingot models according to requirements, and each ingot model has its own ingot total length (L0) and crystal pulling unit length (L d By selecting a specific ingot model, the total length (L0) of the ingot and the crystal pulling unit length (L d ) can be automatically read and determined.

[0060] In one embodiment, in step S2, the current resistance (R t ) can be obtained by actual measurement, and then the current resistance (R t Alternatively, a resistance detection sensor can be applied to measure the resistance of the heater, and the current resistance (R t ) can be determined.

[0061] In one embodiment, in step S2, the total historical operating time of the heater (T h ) can be determined by the following means: For example, the total historical operating time (T h The value of T can be determined by entering data. Alternatively, a timing module can be applied to record the accumulated time when the heater is running. The timing module stops timing when the heater is turned off and converts the current accumulated timing data into the total historical operating time of the heater (T h When the heater starts running again, the timing module stores the total previous history of operation time (T h ) based on the accumulated historical timing data. Thus, when the method is performed, the stored total historical operating time (T h ) and read the total history operation time (T h ) can be determined.

[0062] In one embodiment, when the crystal pulling process is finished and the heater is turned off, the operating time is obtained and the total historical operating time (T h ) can be updated and saved for use in the next crystal pulling process.

[0063] In one embodiment, before a crystal pulling process begins, the heater generally has a predetermined temperature and the puller has a predetermined pull rate. The predetermined temperature and predetermined pull rate are ideal values ​​that do not take into account changes in the heater over time. The predetermined temperature and predetermined pull rate can be set when the crystal pulling furnace is first used, or can be input at the start of each crystal pulling process based on the characteristics of the heater and puller.

[0064] In this example, there are various ways to implement step S5.

[0065] For example, in the first embodiment, step S5 is S511: Compensate the predetermined temperature of each segment according to the temperature compensation value of each segment, and obtain and store the compensated temperature of each segment; S512: Compensate the predetermined lifting speed of each segment according to the lifting speed compensation value of each segment to obtain and store the corrected lifting speed of each segment; S513: during the crystal pulling process, before starting to pull the target segment, obtain a corrected temperature and a corrected pull rate of the target segment, and during the growth of the target segment, control the heater to operate according to the corrected temperature and control the puller to operate according to the corrected pull rate; It has the following.

[0066] For example, in the second embodiment, step S5 is S521: before the target segment starts to be pulled up, obtain a temperature compensation value and a pulling speed compensation value of the target segment; S522: correcting the predetermined temperature of the heater and the predetermined pull-up speed of the pull-up device corresponding to the target segment based on the temperature compensation value and the pull-up speed compensation value of the target segment to obtain corrected temperature and corrected pull-up speed during growth of the target segment; S523: When the target segment starts to be pulled, control the heater to operate according to the corrected temperature, and control the pulling device to operate according to the corrected pulling speed. It has the following.

[0067] In a first embodiment of step S5, before the crystal pulling process begins, the corrected temperature and corrected pull speed for each segment are calculated and stored in a database or a local file. During crystal pulling, the corrected temperature and corrected pull speed for each segment are directly read and retrieved from the database or the local file, and the operation of the heater and puller is in accordance with the corresponding corrected temperature and pull speed.

[0068] In a second embodiment of step S5, the corrected values ​​are not calculated in advance before the crystal pulling process begins. As the crystal pulling process progresses, before the growth of a target segment (i.e., the next segment that begins growth), the temperature compensation value and pull-speed compensation value of the target segment are read and loaded from a database or a local file. The corrected temperature and pull-speed of the target segment are calculated accordingly. Then, during the growth of the target segment, the operation of the heater and puller follows the corresponding corrected temperature and pull-speed. The temperature compensation value and pull-speed compensation value of the target segment do not need to be saved and can be directly deleted. The same steps are repeated for other segments.

[0069] In the second embodiment of step S5, the corrected temperature and corrected pull rate for each segment do not need to be calculated in advance, but only when needed. This reduces the size of the cached data, the storage space occupied, and the requirements for the equipment storage characteristics. In the first embodiment of step S5, additional storage space is required for the pre-calculation and storage of all corrected values. However, during the crystal pulling process, the data only needs to be read without calculation, which can improve the operation efficiency to some extent.

[0070] In this example, the temperature compensation value and the pull-up speed compensation value for each target segment obtained in step S4 can be stored in a database or file, and the storage period can be temporary caching, permanent storage, or storage that can be deleted upon request.

[0071] In one embodiment, a heater aging evaluation form can be set for step S4. The heater aging evaluation form can include various aging codes associated with corresponding ranges of heater resistance difference and total operating time. The aging codes can also be associated with corresponding temperature and pull rate compensation values. The relationship between the resistance difference, total operating time, and the degree of heater aging can be determined based on past crystal pulling data and user experience. The temperature and pull rate compensation values ​​can be determined based on past crystal pulling data and user experience. The heater aging evaluation form can also be saved in a storage device. In the operation of step S4, the resistance difference (DR h ) and total operating time (T h ), the aging code in the heater aging evaluation form can be searched, and the corresponding temperature and pull-up speed compensation values ​​can be obtained based on the aging code.

[0072] In this example, step S4 provides another embodiment of the compensation value determination step, that is, in step S4, the temperature compensation value of each segment is calculated using the following formula:

number

[0073] In step S4, the pull-up speed compensation value of each segment is calculated using the following formula:

number

[0074] In this example, the temperature correction factor (A) is less than 1, and the pull-speed correction factor (B) is less than 1. The temperature correction factor (A) and the pull-speed correction factor (B) are related to the overall thermal field design (thermal field of the heater structure) and structure of the crystal pulling furnace. The values ​​of A and B can be determined after the overall thermal field and structure design of the crystal pulling furnace is completed.

[0075] For example, the temperature correction coefficient (A) is 1 x E -4 , 3×E -4 , 4.5×E -4 , 7×E -4 , 8.5×E -4 , and 9×E -4 etc., in the range [1 × E -4 ,9.9×E -4 The pull-up speed correction factor (B) can be selected from, for example, 1×E -7 , 3×E -7 , 4.5×E -7 , 7×E -7 , 8.5×E -7 , and 9×E -7 etc., in the range [1 × E -7 , 9.9×E -7 ] can be selected from.

[0076] In one example, the values ​​of A and B can also be determined by inverse reasoning. By manually adjusting the parameters (adjusting the temperature and pull rate during the crystal pulling process) to achieve near-perfect crystal pulling, the temperature and pull rate during the crystal pulling process can be recorded and compared with the predetermined temperature and pull rate, and then the temperature and pull rate compensation values ​​can be determined. Then, the heater compensation coefficient (K), the pull rate position coefficient (S), the ingot total length (L), the crystal pulling unit length (L), and the temperature and pull rate compensation coefficient (S) can be calculated. d ), total historical operating time (T h ) can be determined, and the values ​​of A and B can also be determined by inverse reasoning. If the crystal pulling control method is for a crystal pulling furnace with the same structure and the same overall thermal field, the same values ​​of A and B can be directly applied.

[0077] In one embodiment, the compensation coefficient (K) has a value range of [0.1, 20], e.g., 0.1, 0.5, 1, 5, 10, 15, and 20, and the position coefficient (S) has a value range of [0.2, 0.8], e.g., 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8.

[0078] In one embodiment, as shown in FIG. 3, the crystal pulling furnace 100 operates at an actual loading (Q t ), full loading amount (Q0), and loading rate (q) = Q t / Q0. Preferably, the value of the position coefficient (S) increases with the increase of the loading rate (q) within the value range of [0.2, 0.8] of the position coefficient (S). This means that the actual loading amount (Q t The closer the actual loading amount (Q0) is to the full loading amount (Q0), the closer the value of the location coefficient (S) in [0.2,0.8] is to the upper limit of 0.8. t ) is farther from the full loading amount (Q0), the value of the location coefficient (S) in [0.2,0.8] is closer to the lower limit value of 0.2. It is important to note that the actual loading amount (Q t) must be sufficient to grow at least one perfect crystalline ingot.

[0079] 4, 5, and 6, the heater 102 has a heating zone M. The height dimension of the heating zone M is the width of the heating zone M, and the horizontal dimension of the heating zone M represents the temperature value at the current height.

[0080] In one embodiment, as shown in Figures 4 and 5, a crystal pulling furnace 100 includes a furnace body 101 and a heater 102 surrounding the furnace body. The heater 102 has a width (W t The furnace body 101 of the crystal pulling furnace 100 has a height (W0) from top to bottom. The heating zone ratio (w) = W t / W0. Preferably, within the value range of [0.1, 20] of the compensation coefficient (K), the value of the compensation coefficient (K) decreases with increasing value of the heating section ratio (w). In other words, as shown in FIG. 5, the width (Wt) of the heating zone approaches the height (W0) of the furnace body, which means that the width of the heating zone approaches to cover the entire height region of the furnace body, and the value of the compensation coefficient (K) within [0.1, 20] approaches the lower limit of 0.1. As shown in FIG. 4, the width (W) of the heating zone approaches the lower limit of 0.1. t The smaller the value of the compensation coefficient (K) is, the more insufficient it is to cover the height area of ​​the furnace body, and the value of the compensation coefficient (K) in [0.1, 20] approaches the upper limit of 20. The width (W t ) must be greater than 0. The heating zone has a certain width that covers at least the height corresponding to the solid-liquid interface in the crystal pulling.

[0081] Generally, the entire width of the heater 102 from top to bottom can completely cover the height of the furnace body 101. Under some possible circumstances, the upper end of the heater 102 can extend beyond the upper end of the furnace body 101. The lower end of the heater 102 can extend beyond the lower end of the furnace body 101. Therefore, adjustments to the heating zone of the heater 102 can take into account the entire furnace body 101.

[0082] In actual crystal pulling, a person skilled in the art can select appropriate position coefficient (S) and compensation coefficient (K) based on the above-mentioned numerical ranges and principles, and before the compensation value determination step (i.e., step S4), input the calculated position coefficient (S) and compensation coefficient (K) to determine the position coefficient (S) and compensation coefficient (K) to facilitate the subsequent calculation of the temperature compensation value and pulling speed compensation value.

[0083] In one embodiment, before the compensation value determination step (i.e., step S4), a position coefficient (S) is determined. The determination method can include determining a loading rate (q), where the loading rate (q) can be directly input, or the loading rate (q) can be obtained from inputting and calculating the actual loading amount (Qt), and determining the position coefficient (S) from [0.2, 0.8] in response to the loading rate (q).

[0084] In one embodiment, a calculation model can be established in advance for the crystal pulling control method. Once the loading rate (q) is determined, the position coefficient (S) can be automatically calculated and output in response to the loading rate (q), i.e., in response to input of the loading rate (q) into the calculation model. In one embodiment, based on the principle that the value of the position coefficient (S) increases with increasing value of the loading rate (q), and further combined with the statistics of multiple historical data, a quantitative calculation relationship model, i.e., a calculation model for the position coefficient (S) of the pulling rate, can be established.

[0085] In one embodiment, before the compensation value determination step (i.e., step S4), the heater compensation coefficient (K) is determined as follows: Determine the heating zone ratio (w), which can be input, or the heating zone ratio (w) can be calculated by inputting the heating zone width (W t ) can be obtained by calculation based on Determine the compensation factor (K) from [0.1, 20] in response to the heating section ratio (w); It is possible to have that.

[0086] In one embodiment, a calculation model for the heater compensation coefficient can be established in advance for the crystal pulling control method. Once the heating section ratio (w) is determined, the compensation coefficient (K) can be automatically calculated and output in response to the heating section ratio (w), i.e., in response to input of the heating section ratio (w) into the calculation model. In one embodiment, based on the principle that the value of the compensation coefficient (K) increases with increasing value of the heating section ratio (w), further combined with statistics of multiple historical data, a quantitative calculation relationship model, i.e., a calculation model for the heater compensation coefficient (K), can be established.

[0087] In one embodiment, as shown in FIG. 6, the heating zone M of the heater 102 has a first zone Z1 and a second zone Z2. The first zone has a higher temperature than the second zone. The height section in which the first zone Z1 is located covers at least the height at which the solid-liquid interface is located. The second zone Z2 is located above, below, or on both sides of the first zone Z1. The temperature of the second zone Z2 gradually decreases from a direction closer to the first zone Z1 to a direction farther from the first zone Z1.

[0088] The first zone Z1 and the second zone Z2 do not have to have a clear boundary. At the boundary, the first zone Z1 and the second zone Z2 can have the same temperature, and the temperature can change gradually and smoothly from the first zone to the second zone.

[0089] Generally, if the vertical width is 1 mm, the average temperature per unit width of the first zone Z1 is higher than the average temperature of the second zone Z2, and as a result, the first zone Z1 always maintains a better and more stable heating effect on the solid-liquid interface.

[0090] During the heating procedure, the first zone Z1 generally changes with the change in the position of the solid-liquid interface. In one embodiment, when the second zone Z2 is located above and below the first zone Z1, they may have different widths, i.e., the second zone Z2 may be asymmetrically distributed on both sides of the first zone Z1.

[0091] In some embodiments, the first zone Z1 and the second zone Z2 can have the same vertical width. For example, the total width of the heating zone is 450 mm, with the first zone Z1 having a width of 150 mm, the second zone distributed above the first zone having a width of 150 mm, and the second zone distributed below the first zone having a width of 150 mm. In some embodiments, the first zone Z1 and the second zone Z2 can have different vertical widths. For example, the total width of the heating zone is 300 mm, and it includes the first zone Z1 and two second zones Z2 distributed above and below the first zone Z1. While the solid-liquid interface is near the top of the furnace, the first zone Z1 has a width of 100 mm, the upper second zone Z2 has a width of 60 mm, and the lower second zone Z2 has a width of 140 mm. While the solid-liquid interface is near the bottom of the furnace, the first zone Z1 has a width of 100 mm, the upper second zone Z2 has a width of 100 mm, and the lower second zone Z3 has a width of 100 mm.

[0092] The heating zone M of the heater 102 is composed of a first zone Z1 and a second zone Z2, allowing for precise control of the temperature gradient during crystal growth, which is beneficial for controlling the crystal growth rate and quality. The first zone Z1 covers the solid-liquid interface to maintain the stability of the growth interface and reduce crystal defects. The temperature of the second zone Z2 gradually decreases from the side closest to the first zone Z1 toward the outside, reducing crystal stress caused by thermal stress and temperature gradients and improving crystal uniformity. Furthermore, the second zone Z2 can be located above, below, or on both sides of the first zone Z1, providing greater flexibility in adjusting crystal growth conditions. Precise control of the temperatures in the first and second zones reduces impurities and defects in the crystal, improving overall crystal quality. A rational temperature distribution can increase crystal growth efficiency, shorten the growth cycle, and reduce production costs. This design can be adapted to meet various crystal growth requirements. The size and position of the first and second zones can be adjusted to meet various growth conditions. Furthermore, precise control of the temperatures in the two zones allows for better control of the physical and chemical processes in the crystal growth procedure, and therefore precise control of the crystal growth can be achieved.

[0093] Under ideal conditions, as shown in Figure 6, the position of the highest temperature in the first zone Z1 can be made to exactly coincide with the height at which the solid-liquid interface is located, and the temperature gradually decreases in directions extending upward and downward from the position of the highest temperature in the first zone Z1.

[0094] To illustrate the practical application of the method of crystal pulling control for a crystal pulling furnace, the following example is provided.

[0095] FIG. 7 shows the heater temperature change. FIG. 8 shows the pull speed change of the puller. In the figures, the X-axis represents the length of the crystal ingot, with the total length of the crystal ingot represented by a dimensionless unity. Since FIG. 7 is merely intended to illustrate the temperature difference between different cycles of the crystal pulling process, the Y-axis of FIG. 7 represents the heater temperature. Since FIG. 8 is merely intended to illustrate the pull speed difference between different cycles of the crystal pulling process, the Y-axis of FIG. 8 represents the pull speed of the puller, which is dimensionless.

[0096] In Figure 8, the blue line shows the predetermined change in pull rate during the first cycle of the crystal pulling process, and the orange line shows the compensated speed change for all segments during the 100th cycle after the pull rate compensation value for each segment is calculated and applied to the predetermined pull rate. In Figure 7, the blue line shows the recorded heater temperature change during the first cycle of the crystal pulling process, and the orange line shows the compensated temperature change for all segments during the 100th cycle after the temperature compensation value for each segment is calculated based on the method of the present application and applied to the predetermined temperature. The green line shows the recorded heater temperature change during the 100th cycle of the crystal pulling process. The final ingot product meets quality requirements, and a complete crystal pull is nearly achieved. As can be seen in Figure 7, the green line nearly overlaps with the orange line, proving that the compensated heater temperature and compensated pull rate obtained by applying the method of this example are reliable.

[0097] The present application also provides a crystal pulling control apparatus for a crystal pulling furnace, as shown in Figure 9, which includes at least a parameter unit 10, a compensation calculation unit 20, a storage unit 30 and an execution unit 40.

[0098] The parameter unit 10 stores the initial resistance of the heater (R0), the total length of the ingot (L0), and the unit length of the crystal pulling (L d) is used to determine the total length (L0) and the unit length (L d ) based on the “n” segments of the pulling length (D n ) and D n represents the nth segment. The parameter unit 10 also calculates the current resistance (R t ) and the total history operating time of the heater (T h ) to determine the total historical operating time (T h ) is the total amount of time the heater has been running in the past. The parameter unit 10 also calculates the current resistance (R t ) and the initial resistance (RO) (DR h ) is to determine

[0099] The compensation calculation unit 20 calculates the heater resistance difference (DR h ) and total historical operating time (T h ) to determine a temperature compensation value for each segment based on the temperature compensation value for each segment. The storage unit 30 is for storing at least the temperature compensation value for each segment obtained from the compensation calculation unit. The execution unit 40 is for compensating a predetermined temperature of a heater during growth of each segment based on the temperature compensation value for each segment during the crystal pulling process.

[0100] In this example, the compensation calculation unit 20 can store a calculation model for the temperature compensation value, which calculates the temperature compensation value of each segment using the following formula:

number

[0101] In this example, the compensation calculation unit further calculates the resistance difference (DR h ) and total historical operating time (T h ) to determine a pull-speed compensation value for each segment based on the pull-speed compensation value for each segment. The storage unit further stores the pull-speed compensation value for each segment obtained from the compensation calculation unit. The execution unit further compensates for the predetermined pull-speed of the puller during growth of each segment based on the pull-speed compensation value for each segment during the crystal pulling process.

[0102] The compensation calculation unit can further store a calculation model for the pull-up speed compensation value, which calculates the pull-up speed compensation value of each target segment according to the following formula:

number

[0103] To determine the above parameters of the calculation model for the temperature compensation value and the pulling speed compensation value, one can refer to the technical solutions mentioned above in the method for controlling crystal pulling.

[0104] 10, the present application also provides an electronic device having a processor 1 and a memory 2 for storing a computer program. The processor 1 and the memory 2 can communicate with each other via a communication bus 3. The processor 1 executes the computer program, and the memory 2 stores the computer program.

[0105] In an embodiment, processor 1 may be a central processing unit (CPU), or an application specific integrated circuit (ASIC), or one or more integrated circuits configured to implement the present embodiments. In an embodiment, memory 2 may comprise a high-speed RAM memory, or may further comprise a non-volatile memory, such as at least one disk memory. In an embodiment, processor 1 executes at least one computer program to perform the steps of the method of crystal pulling control for a crystal pulling furnace described in any of the above embodiments.

[0106] Furthermore, the present application provides a computer-readable storage medium for storing one or more computer program instructions, which, when executed by a processor, can perform the steps of the method for controlling crystal pulling for a crystal pulling furnace in any of the above-described embodiments.

[0107] A computer storage medium may be a tangible medium that can contain or store a program, and the program may be used by or in connection with an instruction execution system, device, or apparatus. A computer storage medium may be a machine-readable signal medium or a machine-readable storage medium. A computer storage medium may include, but is not limited to, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, device, apparatus, or any suitable combination thereof. More specifically, a machine-readable storage medium may include an electrical connection based on one or more wires, a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination thereof.

[0108] Furthermore, the present application provides a computer program product, the instructions of which, when executed by a processor, are capable of performing the steps of the method of crystal pulling control for a crystal pulling furnace in any of the above-described embodiments.

[0109] The foregoing description of the embodiments has been provided for purposes of illustration and description. It is not intended to be exhaustive or to limit the present disclosure. Individual elements or features of a particular embodiment are generally not limited to that particular embodiment and, where applicable, can be interchangeable and used in selected embodiments even if not specifically shown or described. The same may be varied in many ways. Such variations should not be considered a departure from the present disclosure, and all such variations are intended to be included within the scope of the present disclosure. The scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A method for controlling crystal pulling in a crystal pulling furnace, comprising: The initial resistance of the heater (R ０ ), the total length of the ingot (L ０ ), and the unit length of the crystal pulling (L ｄ ) and determining the total length (L ０ ) is the unit length (L ｄ ) based on the "n" segments of the pull length (D ｎ ) and D ｎ represents the nth segment, and The current resistance of the heater (R ｔ ) and the total historical operating time of the heater (T ｈ ) and determining the total historical operating time (T ｈ ) is the total value of the past operation time of the heater; The current resistance (R ｔ ) and the initial resistance (R ０ ) resistance difference (DR ｈ ) The resistance difference (DR ｈ ) and the total history operation time (T ｈ determining and storing a temperature compensation value for each segment based on the calculated temperature; during the crystal pulling process, compensating the predetermined temperature of the heater during growth of each segment based on the temperature compensation value of each segment; A method having the following.

2. The current resistance (R ｔ ) and the initial resistance (R ０ ) between the resistance difference (DR ｈ ) and then The resistance difference (DR ｈ ) and the total history operation time (T ｈ determining and storing a pull-speed compensation value for each segment based on the during the crystal pulling process, compensating a predetermined pull rate of the puller during growth of each segment based on the pull rate compensation value for each segment; The method of claim 1 further comprising:

3. The compensating step includes: Compensating the predetermined temperature of each segment based on the temperature compensation value of each segment, and obtaining and storing the corrected temperature of each segment; Compensating the predetermined pull-speed of each segment based on the pull-speed compensation value of each segment to obtain and store a corrected pull-speed of each segment; obtaining the corrected temperature and the corrected pull rate of the target segment before the start of pulling of the target segment during the crystal pulling process, and controlling the heater to operate according to the corrected temperature and the puller to operate according to the corrected pull rate during growth of the target segment; The method of claim 2 comprising:

4. The compensating step includes: obtaining the temperature compensation value and the pull-speed compensation value for the target segment before the start of the pull of the target segment; correcting the predetermined temperature of the heater and the predetermined pull-speed of the pull-up device corresponding to the target segment based on the temperature compensation value and the pull-speed compensation value of the target segment to obtain a corrected temperature and a corrected pull-speed during growth of the target segment; controlling the heater to operate in accordance with the corrected temperature when the pulling of the target segment begins, and controlling the pulling device to operate in accordance with the corrected pulling speed. The method of claim 2 comprising:

5. The resistance difference (DR ｈ ) and the total history operation time (T ｈ determining and storing the temperature compensation value for each segment based on the The temperature compensation value for each segment is calculated using the following formula: [Equation 1] is calculated based on where i=1, 2, 3, ..., n, and n represents the number of segments into which the ingot is divided; O.T. ｉ is the i-th segment (D ｉ ) represents the temperature compensation value of T ｈ represents the total historical operating time of the heater; Dr. ｈ is the current resistance (R ｔ ) and the initial resistance (R ０ ) represents the resistance difference between L ０ represents the total length of the ingot, Office Lady ｉ is the distance between the top of the ingot and the i-th segment (D ｉ ) and K is the compensation coefficient of the heater; A is the temperature correction factor, The method of claim 1.

6. The resistance difference (DR ｈ ) and the total history operation time (T ｈ determining and storing the pull-speed compensation value for each segment based on The pull speed compensation value for each segment is calculated using the following formula: [Equation 2] is calculated based on where i=1, 2, 3, ..., n, and n represents the number of segments into which the ingot is divided; OPS ｉ is the i-th segment (D ｉ ) represents the pull-up speed compensation value of T ｈ represents the total historical operating time of the heater; Dr. ｈ is the current resistance (R ｔ ) and the initial resistance (R ０ ) represents the resistance difference between L ０ represents the total length of the ingot, Office Lady ｉ is the distance between the top of the ingot and the i-th segment (D ｉ ) and K is the compensation coefficient of the heater; B is the pull-up speed correction factor, S is the position coefficient of the pulling speed, The method of claim 2.

7. 6. The method of claim 5, wherein the temperature correction factor (A) is less than one.

8. 7. The method of claim 6, wherein the pull speed correction factor (B) is less than 1.

9. 9. The method according to any one of claims 5 to 8, wherein the compensation factor (K) has a value range of [0.1, 20].

10. 9. The method according to claim 6 or 8, wherein the compensation coefficient (K) has a value range of [0.1, 20] and the position coefficient (S) has a value range of [0.2, 0.8].

11. The crystal pulling furnace has an actual loading amount (Q ｔ ), full loading amount (Q ０ ), and loading rate (q) = Q ｔ / Q ０ and within the value range of [0.2, 0.8] of the location coefficient (S), the value of the location coefficient (S) increases with increasing value of the loading rate (q).

12. The crystal pulling furnace has a furnace body and a heater surrounding the furnace body, and the heater has a width from top to bottom (W ｔ ) and the furnace body has a heating zone with a height (W ０ ), heating section ratio (w) = W ｔ / W ０ and wherein within the value range of [0.1, 20] of the compensation factor (K), the value of the compensation factor (K) decreases with increasing values ​​of the heating section ratio (w).

13. 13. The method of claim 12, wherein the heating zone comprises a first zone and a second zone, the first zone having a temperature higher than that of the second zone, the first zone having a height and positioned so as to cover at least the solid-liquid interface during crystal pulling, the second zone being positioned above and / or below the first zone, and the second zone having a temperature that gradually decreases from near to far from the first zone.

14. before the step of determining the compensation value, determining the loading rate (q); determining the location factor (S) from [0.2, 0.8] in response to the loading rate (q); The method of claim 11 further comprising:

15. before the step of determining the compensation value, determining the heating section ratio (w); determining the compensation factor (K) from [0.1, 20] in response to the heating section ratio (w); 13. The method of claim 12 further comprising:

16. before the step of determining the compensation value, determining the compensation factor (K) and the position factor (S); The method of claim 2 further comprising:

17. When the crystal pulling process is completed and the heater is turned off, obtaining an operating time of the heater for the crystal pulling process; The total historical operating time (T ｈ ) and storing it; 3. The method of claim 1 or 2, further comprising:

18. The initial resistance (R ０ ), the total length of the ingot (L ０ ), and the unit length (L ｄ ) before deciding The initial resistance (R ０ ), the total length of the ingot (L ０ ), and the unit length (L ｄ ), 3. The method of claim 1 or 2, further comprising:

19. A crystal pulling control device for a crystal pulling furnace, comprising: is a parameter unit, The initial resistance of the heater (R ０ ), the total length of the ingot (L ０ ), and the unit length of the crystal pulling (L ｄ ) is a parameter unit that determines the total length (L ０ ) is the unit length (L ｄ ) based on the "n" segments of the pull length (D ｎ ) and D ｎ represents the nth segment, The current resistance of the heater (R ｔ ) and the total historical operating time of the heater (T ｈ ) and determining the total historical operating time (T ｈ ) is the total past operating time of the heater, The current resistance (R ｔ ) and the initial resistance (R ０ ) resistance difference (DR ｈ a parameter unit for determining the The resistance difference (DR ｈ ) and the total history operation time (T ｈ a compensation calculation unit for determining a temperature compensation value for each segment based on the calculated temperature; a storage unit for storing at least the temperature compensation value of each segment obtained from the compensation calculation unit; an execution unit for compensating a predetermined temperature of the heater during growth of each segment based on the temperature compensation value of each segment during the crystal pulling process; A device having:

20. The compensation calculation unit further calculates the resistance difference (DR ｈ ) and the total history operation time (T ｈ ) determining a pull-up speed compensation value for each segment based on the The storage unit further stores the pull-up speed compensation value of each segment obtained from the compensation calculation unit; The execution unit further compensates for a predetermined pull-speed of a puller during growth of each segment based on the pull-speed compensation value of each segment during the crystal pulling process.

20. The apparatus of claim 19.

21. the compensation calculation unit stores a calculation model for the temperature compensation value; The calculation model for the temperature compensation value calculates the temperature compensation value of each segment using the following equation: [Equation 3] Determined based on where i=1, 2, 3, ..., n, and n represents the number of segments into which the ingot is divided; O.T. ｉ is the i-th segment (D ｉ ) represents the temperature compensation value of T ｈ represents the total historical operating time of the heater; Dr. ｈ is the current resistance (R ｔ ) and the initial resistance (R ０ ) represents the resistance difference between L ０ represents the total length of the ingot, Office Lady ｉ is the distance between the top of the ingot and the i-th segment (D ｉ ) and K is the compensation coefficient of the heater; A is the temperature correction factor, 20. The apparatus of claim 19.

22. The compensation calculation unit further stores a calculation model for the pull-up speed compensation value; The calculation model for the pull-speed compensation value calculates the pull-speed compensation value for each target segment using the following equation: [Equation 4] Determined based on where i=1, 2, 3, ..., n, and n represents the number of segments into which the ingot is divided; OPS ｉ is the i-th segment (D ｉ ) represents the pull-up speed compensation value of T ｈ represents the total historical operating time of the heater; Dr. ｈ is the current resistance (R ｔ ) and the initial resistance (R ０ ) represents the resistance difference between L ０ represents the total length of the ingot, Office Lady ｉ is the distance between the top of the ingot and the i-th segment (D ｉ ) and K is the compensation coefficient of the heater; B is the pull-up speed correction factor, S is the position coefficient of the pulling speed, 21. The apparatus of claim 20.

23. a processor and a memory storing a computer program; The processor executes the computer program to perform the steps of the method according to any one of claims 1 to 8. electronic equipment.

Images