Plasma processing system and method of adjusting transfer position of substrate

Abstract

To provide a technique for improving uniformity of a plasma processing amount in a substrate.SOLUTION: The disclosed plasma processing system includes a measurement unit. The measurement unit is configured to measure a plurality of plasma processing amounts at a plurality of measurement positions on the substrate. The plurality of plasma processing amounts include a first plasma processing amount T1 and a second plasma processing amount T2. The first plasma processing amount T1 is a maximum plasma processing amount. The second plasma processing amount is the minimum plasma processing amount. The controller is configured to adjust the transfer position by an adjustment amount d in a direction from the center of the substrate or the center of the circumference on which the plurality of measuring positions are arranged toward the measuring position where the first plasma processing amount T1 is measured among the plurality of measuring positions. The adjustment amount d satisfies the following equation (1). D = (T1-T2) 2 / a (1).SELECTED DRAWING: Figure 4

Description

[Technical Field]

[0001] SUMMARY Exemplary embodiments of the present disclosure relate to a plasma processing system and a method for adjusting a substrate transfer position. [Background technology]

[0002] It is known that the amount of plasma processing on a substrate varies depending on the position where the substrate is placed. Patent Document 1 discloses a technique for determining the deviation between the center of plasma processing and the center of the substrate by measuring the etching rate at multiple positions on the substrate. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2013-141012 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides techniques for improving the uniformity of plasma processing dose across a substrate. [Means for solving the problem]

[0005] In one exemplary embodiment, a plasma processing system is provided. The plasma processing system includes a chamber, a substrate support, a plasma generation unit, a transfer module, a measurement unit, and a controller. The chamber defines a processing space therein. The substrate support is disposed within the processing space. The substrate support has a substrate support surface on which a substrate is placed. The plasma generation unit is configured to generate plasma from a gas in the processing space. The transfer module is configured to transfer the substrate to a transfer position on the substrate support surface. The measurement unit is configured to measure a plurality of plasma processing volumes at a plurality of measurement positions on the substrate. The plurality of measurement values ​​are located on a circle centered on the center of the substrate. The controller is configured to adjust the transfer position. The plurality of plasma processing volumes include a first plasma processing volume and a second plasma processing volume. The first plasma processing volume is the largest plasma processing volume among the plurality of plasma processing volumes. The second plasma processing volume is the smallest plasma processing volume among the plurality of plasma processing volumes. The control unit is configured to adjust the transfer position by an adjustment amount d in a direction from the center of the plurality of measurement positions toward the measurement position where the first plasma processing amount is measured among the plurality of measurement positions. The adjustment amount d satisfies the following formula (1). d=(T1-T2) 2 / a…(1) Here, T1 is the first plasma treatment amount, T2 is the second plasma treatment amount, and a is a coefficient. [Effects of the Invention]

[0006] According to one exemplary embodiment, the uniformity of the plasma processing dose across the substrate is increased. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a diagram illustrating a plasma processing system according to one exemplary embodiment. [Figure 2] FIG. 2 is a diagram illustrating an example of the configuration of a plasma processing system. [Figure 3]FIG. 3 is a diagram illustrating an example of the configuration of a capacitively coupled plasma processing apparatus. [Figure 4] FIG. 4 is a diagram showing an example of the plasma processing amount at a plurality of measurement positions. [Figure 5] FIG. 5 is a graph showing an example of the plasma processing amount at a plurality of measurement positions. [Figure 6] FIG. 6 is a flow chart illustrating a method for adjusting a transfer position of a substrate according to one exemplary embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0008] Various exemplary embodiments will be described in detail below with reference to the drawings, in which the same or equivalent parts are designated by the same reference numerals.

[0009] FIG. 1 is a diagram illustrating a plasma processing system according to an exemplary embodiment. As shown in FIG. 1, the plasma processing system PS includes a transfer module VTM, a measurement unit 5, a controller MC, and multiple process modules PM1 to PM6. In one embodiment, the plasma processing system PS may further include a loader module LM and at least one load lock module. The at least one load lock module in the plasma processing system PS includes two load lock modules LL1 and LL2. The plasma processing system PS may further include at least one load port, a substrate inspection module CM, an aligner AN, and a storage SR. The at least one load port in the plasma processing system PS includes four load ports LP1 to LP4.

[0010] The loader module LM is an example of an atmospheric transfer module. In one embodiment, the loader module LM includes a transfer chamber ACH. The transfer chamber ACH is an example of another transfer chamber. The pressure inside the transfer chamber ACH of the loader module LM can be set to atmospheric pressure. The loader module LM may include a fan filter unit (FFU). The loader module LM is, for example, an equipment front end module (EFEM). The loader module LM is disposed between each of the load ports LP1 to LP4 and each of the load lock modules LL1 and LL2. The load ports LP1 to LP4 are arranged along one of a pair of edges along the longitudinal direction of the loader module LM. The load lock modules LL1 and LL2 are arranged along the other of a pair of edges along the longitudinal direction of the loader module LM. Each of the load ports LP1 to LP4 is configured to support a cassette CST placed thereon. The cassette CST is a container that accommodates multiple substrates W therein. The cassette CST is, for example, a front-opening unified pod (FOUP).

[0011] In one embodiment, the loader module LM includes a transfer robot TR3. The transfer robot TR3 is an example of another transfer robot. The transfer robot TR3 is provided in a transfer chamber ACH of the loader module LM. The transfer robot TR3 may include an articulated arm AR31 and an end effector FK31. The end effector FK31 is attached to the tip of the articulated arm AR31. The end effector FK31 is configured to support a substrate W. The transfer robot TR3 is configured to transport the substrate W through the transfer chamber ACH. For example, the transfer robot TR3 transports the substrate W based on an operation instruction output by a controller MC, which will be described later. The transfer robot TR3 transports the substrate W between any two of a cassette CST placed on at least one of the load ports LP1 to LP4, load lock modules LL1 and LL2, an aligner AN, and a storage SR.

[0012] The aligner AN is disposed along one of a pair of edges along the shorter direction of the loader module LM. The aligner AN may be disposed along an edge along the longer direction of the loader module LM. Alternatively, the aligner AN may be disposed within the transfer chamber ACH of the loader module LM. The aligner AN includes a stage, an optical sensor, and the like. The stage of the aligner AN is rotatable and supports the substrate W placed thereon. The aligner AN detects the angular position of a marker (e.g., a notch) of the substrate W on the stage and the center position of the substrate W on the stage using the optical sensor. The controller MC controls the rotation of the stage of the aligner AN to correct the angular position of the marker (e.g., a notch) of the substrate W on the stage to a reference angular position so as to correct the amount of deviation in the angular position of the substrate W. The controller MC also controls the position of the end effector FK31 when receiving the substrate W from the aligner AN onto the end effector FK31, so as to position the center of the substrate W at a predetermined position on the end effector FK31.

[0013] The storage SR is arranged along an edge along the longitudinal direction of the loader module LM. The storage SR may be arranged along an edge along the lateral direction of the loader module LM. Alternatively, the storage SR may be provided inside the loader module LM. The storage SR is configured to accommodate the substrate W therein.

[0014] The substrate inspection module CM may be provided inside the loader module LM or the transfer module VTM. The substrate inspection module CM may be connected to the loader module LM below the load ports LP1 to LP4. The substrate inspection module CM is not limited to the above locations and may be installed in any location. The substrate inspection module CM is configured to acquire an image of the substrate W.

[0015] In one embodiment, the load lock modules LL1 and LL2 are connected to the loader module LM. Each of the load lock modules LL1 and LL2 and the loader module LM may be connected via a gate valve G3. In the example shown in FIG. 1, each of the load lock modules LL1 and LL2 and the transfer module VTM are connected via a gate valve G2. Each of the load lock modules LL1 and LL2 may be disposed between the transfer module VTM and the loader module LM. Each of the load lock modules LL1 and LL2 provides a preliminary decompression chamber.

[0016] The transfer module VTM has at least one transfer chamber and at least one transfer robot. In the example shown in Fig. 1, the transfer module VTM has a transfer chamber VCH and a transfer robot TR as the at least one transfer chamber and at least one transfer robot. The transfer chamber VCH is configured to be depressurizable. The transfer robot TR is configured to transfer a substrate W through the transfer chamber VCH.

[0017] Each of the process modules PM1 to PM6 has a chamber 10 and a substrate support 11 (see FIG. 3). The chamber 10 provides a processing space therein. The chamber 10 is connected to a transfer module VTM. In the example shown in FIG. 1, the process modules PM1 to PM6 are connected to the transfer module VTM via a gate valve G1. The transfer robot TR is configured to transfer a substrate W to the processing space 10s.

[0018] The transport robot TR may include articulated arms AR11 and AR12 and end effectors FK11 and FK12. The end effector FK11 is attached to the tip of the articulated arm AR11 and configured to support the substrate W. The end effector FK12 is attached to the tip of the articulated arm AR12 and configured to support the substrate W placed thereon. For example, the transport robot TR transports the substrate W based on operation instructions output by a controller MC, which will be described later. The transport robot TR supports the substrate W using the end effectors FK11 and FK12. The transport robot TR is configured to transport the substrate W between the paths of the load lock modules LL1 and LL2 and the process modules PM1 to PM6. In one embodiment, the ring member R is an edge ring ER (focus ring) or a covering ring CR. The edge ring ER is used to surround the substrate W on the substrate support member 11. The covering ring CR is used to surround the edge ring ER. Details of the edge ring ER and the covering ring CR will be described later.

[0019] In one embodiment, each of the process modules PM1 to PM6 is configured to perform a dedicated process on the substrate W. At least one of the process modules PM1 to PM6 is a substrate processing apparatus such as the plasma processing apparatus 1 described below.

[0020] The controller MC is configured to control each part of the plasma processing system PS. The controller MC may be a computer including a processor, a storage device, an input device, a display device, etc. The controller MC executes a control program stored in the storage device and controls each part of the plasma processing system PS based on recipe data stored in the storage device. Transfer methods according to various exemplary embodiments, which will be described later, are performed in the plasma processing system PS by the controller MC controlling each part of the plasma processing system PS. The controller MC is configured to control the transfer module VTM and the substrate support 11. The controller MC may be connected to the measurement unit 5.

[0021] FIG. 3 is a diagram illustrating an example of the configuration of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing device 1 and a control unit 2. The plasma processing system is an example of a plasma processing system, and the plasma processing device 1 is an example of a substrate processing device. The plasma processing device 1 includes a plasma processing chamber 10, a substrate support 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20 (described later), and the gas exhaust port is connected to an exhaust system 40 (described later). The substrate support 11 is disposed in the plasma processing space and has a substrate support surface for supporting a substrate.

[0022] The plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron-cyclotron-resonance plasma (ECR plasma), helicon wave plasma (HWP), or surface wave plasma (SWP). Various types of plasma generating units may be used, including alternating current (AC) plasma generating units and direct current (DC) plasma generating units. In one embodiment, the AC signal (AC power) used in the AC plasma generating unit has a frequency in the range of 100 kHz to 10 GHz. Therefore, the AC signal includes a radio frequency (RF) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0023] The controller 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described in this disclosure. The controller 2 may be configured to control each element of the plasma processing apparatus 1 to perform various processes described herein. In one embodiment, part or all of the controller 2 may be included in the plasma processing apparatus 1. The controller 2 may include a processor 2a1, a storage unit 2a2, and a communication interface 2a3. The controller 2 may be implemented by, for example, a computer 2a. The processor 2a1 may be configured to read a program from the storage unit 2a2 and execute the read program to perform various control operations. The program may be stored in the storage unit 2a2 in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 by the processor 2a1 for execution. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The processor 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a random access memory (RAM), a read only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0024] The following describes a configuration example of a capacitively coupled plasma processing apparatus as an example of the plasma processing apparatus 1. Fig. 2 is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus.

[0025] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one process gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0026] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.

[0027] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that the annular region 111b may also be provided by another member surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. Furthermore, at least one RF / DC electrode coupled to an RF power supply 31 and / or a DC power supply 32, which will be described later, may be disposed within the ceramic member 1111a. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal, which will be described later, is supplied to the at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. Note that the conductive member of the base 1110 and the at least one RF / DC electrode may function as multiple lower electrodes. Alternatively, the electrostatic electrode 1111b may function as a lower electrode. Therefore, the substrate support 11 includes at least one lower electrode.

[0028] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0029] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow passage 1110a, or a combination thereof. A heat transfer fluid such as brine or a gas flows through the flow passage 1110a. In one embodiment, the flow passage 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. The substrate support 11 may also include a heat transfer gas supply configured to supply a heat transfer gas to a gap between the backside of the substrate W and the central region 111a.

[0030] The showerhead 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas introduction unit may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0031] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the showerhead 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of the at least one process gas.

[0032] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates a plasma from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generation unit 12. Furthermore, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, and ion components in the formed plasma can be attracted to the substrate W.

[0033] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0034] The second RF generating unit 31b is coupled to at least one lower electrode via at least one impedance matching circuit and configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generating unit 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0035] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to at least one lower electrode and configured to generate a first DC signal. The generated first DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 32b is connected to at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0036] In various embodiments, the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof. In one embodiment, a waveform generator for generating a sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode. Thus, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have either positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one period. The first and second DC generating units 32a and 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided instead of the second RF generating unit 31b.

[0037] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve regulates the pressure in the plasma processing space 10s. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0038] The control unit 2 may also serve as the control unit MC. As described above, the central region 111a is an example of a substrate support surface on which a substrate is placed. The transfer module VTM is configured to transfer the substrate W to a transfer position in the central region 111a. The transfer position is a position set in the central region 111a to which the substrate W is transferred. The transfer position may also be position information to which the substrate W supported on the end effectors FK11 and FK12 is transferred. The transfer position can be expressed by an XY Cartesian coordinate system with the center of the central region 111a as the origin. In one example, the transfer position is the center of the central region 111a, and the transfer module VTM transfers the substrate W supported on the end effectors FK11 and FK12 so that the center of the substrate W is positioned at the transfer position (the center of the central region 111a).

[0039] As described above, the plasma processing system PS includes the measurement unit 5. In the example shown in FIG. 1, the measurement unit 5 is connected to the transfer chamber VCH of the transfer module VTM. The measurement unit 5 may be disposed within the transfer chamber VCH of the transfer module VTM. The measurement unit 5 is configured to measure a plurality of plasma processing amounts at a plurality of measurement positions MP on the substrate W, respectively. The measurement unit 5 may include an optical interferometer, a laser spectrometer, a stylus film thickness gauge, an atomic force microscope, and an electrical resistance film thickness gauge.

[0040] The measurement unit 5 may calculate a plurality of plasma processing amounts at the plurality of measurement positions MP from a difference between a plurality of first measurement values ​​at the plurality of measurement positions MP on the substrate W before plasma processing and a plurality of second measurement values ​​at the plurality of measurement positions MP on the substrate W after plasma processing. The difference between the plurality of first measurement values ​​and the plurality of second measurement values ​​may be calculated by the control unit MC instead of the measurement unit 5. Each of the plurality of first measurement values ​​and the plurality of second measurement values ​​includes a vertical position of the upper surface of the substrate W or the upper surface of a film formed on the upper surface. The transfer module VTM may transfer the substrate W to the measurement unit 5 before plasma processing and then transfer the substrate W from the measurement unit 5 to a transfer position in the central region 111a. The transfer module VTM may transfer the substrate W from the transfer position in the central region 111a to the measurement unit 5 after plasma processing.

[0041] In one embodiment, the plasma processing may be an etching processing. When the plasma processing is an etching processing, each of the multiple plasma processing amounts may include an etching rate or an etching amount. The etching rate is the etching amount per unit time. The etching amount may be the difference in the position of the upper surface of the substrate W before and after the plasma processing. The etching amount may be the depth of a recess formed by the etching. When the etching processing is performed on a substrate W that has been subjected to a film formation processing, the plasma processing amount may include a film thickness. The film thickness may be the difference in the position of the upper surface of the film formed by the film formation processing and the position of the upper surface of the substrate W exposed by the etching processing. The film thickness may be measured by optically measuring the upper surface and the bottom surface of the film formed by the film formation processing.

[0042] In one embodiment, the plasma processing may be a film formation process. When the plasma processing is a film formation process, each of the multiple plasma processing amounts may include a film formation rate, a film formation amount, or a film thickness. The film formation rate is the film formation amount per unit time. The film formation amount may be the difference in position of the upper surface of the substrate W before and after the plasma processing. The film formation amount may be the height of a convex portion formed by film formation. The plasma processing amount may include a film thickness. The film thickness may be the difference in position between the upper surface of the film formed by the film formation process and the exposed upper surface of the substrate W. The film thickness may be measured by optically measuring the upper surface of the film formed by the film formation process and the bottom surface of the film.

[0043] FIG. 4 is a diagram illustrating an example of the plasma processing amount at a plurality of measurement positions. FIG. 5 is a graph illustrating an example of the plasma processing amount at a plurality of measurement positions. In FIGS. 4 and 5, the etching rate is shown as the plasma processing amount. The plurality of measurement positions MP on the substrate W are located on a circumference with the center of the substrate W as its center. The center of the substrate W is not limited to the exact center, but may be located in the central region of the substrate W. The plurality of measurement positions MP can be represented by an XY Cartesian coordinate system with the center of the substrate as the origin. In one example, the transfer position is the center of the central region 111a. In the example shown in FIG. 4, the plasma processing amount of the substrate W is measured at a plurality of first measurement positions MP1, a plurality of second measurement positions MP2, a plurality of third measurement positions MP3, and a measurement position CP.

[0044] The plurality of first measurement positions MP1 are located on a first circumference. The first circumference is farthest from the center of the substrate W. In one embodiment, the number of the plurality of measurement positions MP may be 24 or more. The plurality of first measurement positions MP1 includes 24 measurement positions equally spaced on the first circumference. One of the 24 measurement positions interferes with the notch of the substrate W, so the plasma processing amount is not measured at that measurement position. The plurality of second measurement positions MP2 are located on a second circumference. The second circumference is closest to the center of the substrate W. The plurality of second measurement positions MP2 includes 8 measurement positions equally spaced on the second circumference. The plurality of third measurement positions MP3 are located on a third circumference equally spaced on the third circumference. The third circumference is located between the first and second circumferences. The plurality of third measurement positions MP3 includes 16 measurement positions. The first circumference, the second circumference, and the third circumference are concentric circles with their centers at the center of the substrate W. The measurement position CP is located on the center of the substrate W.

[0045] In the following, the multiple first measurement positions MP1 will be described as an example of the multiple measurement positions MP. FIG. 5 shows the plasma processing amounts at the multiple first measurement positions MP1. The multiple plasma processing amounts measured at the multiple first measurement positions MP1 include a first plasma processing amount T1 and a second plasma processing amount T2. The first plasma processing amount T1 is the largest plasma processing amount among the multiple first measurement positions MP1. In the example shown in FIG. 4, the first plasma processing amount T1 is measured at measurement position P1 among the multiple first measurement positions MP1. The first plasma processing amount T1 is 1913.2 angstroms / min. The second plasma processing amount is the smallest plasma processing amount among the multiple first measurement positions MP1. In the examples shown in FIGS. 4 and 5, the second plasma processing amount T2 is measured at measurement position P2 among the multiple first measurement positions MP1. The second plasma processing amount T2 is 1888.7 angstroms / min.

[0046] The control unit MC is configured to adjust the transport position by an adjustment amount d that satisfies the following equation (1) in a direction from the center of the substrate W or the center of the circumference on which the multiple first measurement positions MP1 are located toward the measurement position P1 among the multiple first measurement positions MP1 at which the first plasma processing amount T1 was measured. d=(T1-T2) 2 / a…(1)

[0047] Here, a is a coefficient. a may be a value specific to the plasma processing apparatus. In one embodiment, a may be a function including the plasma processing time as a variable. In one example, a may include the distances from the center of the substrate W to the edge ring ER, the electrostatic chuck 1111, and the multiple measurement positions MP as variables. In the example shown in FIGS. 4 and 5, a is 288×10 -17 In this case, the adjustment amount d is 2.08 mm. In one embodiment, the control unit MC may be configured to adjust the delivery position when the adjustment amount d is greater than a predetermined threshold. In one example, the control unit MC is configured to adjust the delivery position when the adjustment amount d is greater than 0.1 mm.

[0048] The plasma processing amounts at the measurement positions MP vary depending on the transfer position at which the substrate W is placed. When the transfer position is moved from the center of the substrate W toward the measurement position P1 at which the first plasma processing amount T1 was measured among the plurality of first measurement positions MP1, the first plasma processing amount T1 decreases and the second plasma processing amount T2 increases. According to the plasma processing system PS, the difference between the first plasma processing amount T1 and the second plasma processing amount T2 approaches zero by performing an adjustment by an adjustment amount d proportional to the square of the difference between the first plasma processing amount T1 and the second plasma processing amount T2. As a result, the uniformity of the plasma processing amount on the substrate W is improved.

[0049] 6 is a flow chart illustrating a method for adjusting a transfer position of a substrate according to one exemplary embodiment. The method for adjusting a transfer position of a substrate (hereinafter referred to as "method MT") illustrated in FIG. 6 can be performed by the plasma processing system PS described above. The method MT will now be described in detail with reference to an embodiment in which the method MT is applied to a substrate W using the plasma processing system PS.

[0050] As shown in Figure 6, the method MT starts with step S10. In step S10, the substrate W is transported to a transfer position in the central region 111a. In one example, the substrate W is transported to the transfer position by a transport robot TR of the transport module VTM. In one embodiment, the method MT may include, prior to step S10, a step Sa of measuring a plurality of first measurement values ​​at a plurality of measurement positions MP of the substrate W. In one example, the plurality of first measurement values ​​are the height of the top surface of the substrate W.

[0051] In the method MT, step S20 is performed after step S10. In step S20, a plasma process is performed on the substrate W. As described above, the plasma process may be an etching process or a film formation process.

[0052] In the method MT, step S30 is performed after step S20. In step S30, the plasma processing amount is measured at each of a plurality of measurement positions MP on the substrate W. In one example, the plasma processing amount is measured at each of a plurality of first measurement positions MP1.

[0053] Finally, step S40 is performed in the method MT. In step S40, the transfer position in the central region 111a is adjusted. In step S40, the transfer position is adjusted by an adjustment amount d that satisfies the above formula (1) in a direction from the center of the substrate W or the center of the circumference on which the plurality of first measurement positions MP1 are located toward the measurement position P1 among the plurality of first measurement positions MP1 at which the above-mentioned first plasma processing amount T1 was measured. In one embodiment, step S40 may be performed when the adjustment amount d is greater than a predetermined threshold. In one example, the method MT may include, between steps S30 and S40, step S35 of determining whether the adjustment amount d is greater than a predetermined threshold.

[0054] As described above, the plasma processing amounts at the measurement positions MP vary depending on the transfer position at which the substrate W is placed. When the transfer position is moved from the center of the substrate W toward the measurement position P1 at which the first plasma processing amount T1 was measured among the first measurement positions MP1, the first plasma processing amount T1 decreases and the second plasma processing amount T2 increases. According to the method MT, the difference between the first plasma processing amount T1 and the second plasma processing amount T2 approaches zero by adjusting the amount d proportional to the square of the difference between the first plasma processing amount T1 and the second plasma processing amount T2. As a result, the uniformity of the plasma processing amount on the substrate W is improved.

[0055] Although various exemplary embodiments have been described above, the present invention is not limited to the above-described exemplary embodiments, and various additions, omissions, substitutions, and modifications may be made. Furthermore, elements in different embodiments may be combined to form other embodiments.

[0056] Various exemplary embodiments included in the present disclosure are now described in [E1] to [E7] below.

[0057] [E1] a chamber providing a processing space therein; a substrate support disposed within the processing space, the substrate support having a substrate support surface on which a substrate is placed; a plasma generating unit configured to generate plasma from gas in the processing space; a transfer module configured to transfer the substrate to a transfer position on the substrate support surface; a measurement unit configured to measure a plurality of plasma processing amounts at a plurality of measurement positions on the substrate, the measurement positions being located on a circumference with the center of the substrate as its center; a control unit configured to adjust the transport position; Equipped with The plurality of plasma processing amounts are a first plasma processing amount that is the largest among the plurality of plasma processing amounts; a second plasma processing amount that is the smallest among the plurality of plasma processing amounts; Including, the control unit is configured to adjust the transfer position by an adjustment amount d that satisfies the following formula (1) in a direction from the center of the substrate or the center of the circumference toward a measurement position at which the first plasma processing amount is measured among the plurality of measurement positions: d=(T1-T2) 2 / a…(1) where T1 is the first plasma treatment amount, T2 is the second plasma treatment amount, and a is a coefficient. Plasma treatment system.

[0058] [E2] the plasma treatment is an etching treatment, Each of the plurality of plasma processing amounts includes an etching rate, an etching amount, or a film thickness. The plasma processing system of E1.

[0059] [E3] the plasma treatment is a film formation treatment, Each of the plurality of plasma processing amounts includes a film formation rate, a film formation amount, or a film thickness. The plasma processing system of any one of E1 and E2.

[0060] [E4] The control unit is configured to adjust the transport position when the adjustment amount d is greater than a predetermined threshold value. The plasma processing system according to any one of E1 to E3.

[0061] [E5] In the formula (1), a is a function including the plasma treatment time as a variable. The plasma processing system according to any one of E1 to E4.

[0062] [E6] The number of the plurality of measurement locations is 24 or more. The plasma processing system according to any one of E1 to E5.

[0063] [E7] (a) transferring a substrate to a transfer position on a substrate support surface; (b) subjecting the substrate to a plasma treatment; (c) measuring a plurality of plasma processing amounts at a plurality of measurement positions on the substrate, the measurement positions being located on a circumference with the center of the substrate as its center; (d) adjusting the transfer position; Including, The plurality of plasma processing amounts are a first plasma processing amount that is the largest among the plurality of plasma processing amounts; a second plasma processing amount that is the smallest among the plurality of plasma processing amounts; Including, In the step (d), the transfer position is adjusted by an adjustment amount d that satisfies the following formula (1) in a direction from the center of the substrate or the center of the circumference toward a measurement position at which the first plasma processing amount is measured among the plurality of measurement positions; d=(T1-T2) 2 / a…(1) where T1 is the first plasma treatment amount, T2 is the second plasma treatment amount, and a is a coefficient. A method for adjusting the transfer position of a substrate.

[0064] The method for adjusting the transfer position of E7 may be performed in the plasma processing system described in any one of E1 to E6.

[0065] From the foregoing, it will be understood that various embodiments of the present disclosure have been described herein for purposes of illustration, and that various modifications may be made without departing from the scope and spirit of the present disclosure. Accordingly, the various embodiments disclosed herein are not intended to be limiting, with the true scope and spirit being indicated by the appended claims. [Explanation of symbols]

[0066] 2...control unit, 5...measurement unit, 10...chamber, 10s...processing space, 11...substrate support unit, 12...plasma generation unit, MC...control unit, MP...measurement position, PS...plasma processing system, T1...first plasma processing amount, T2...second plasma processing amount, VTM...transfer module, W...substrate.

Claims

1. a chamber providing a processing space therein; a substrate support disposed within the processing space, the substrate support having a substrate support surface on which a substrate is placed; a plasma generating unit configured to generate plasma from gas in the processing space; a transfer module configured to transfer the substrate to a transfer position on the substrate support surface; a measurement unit configured to measure a plurality of plasma processing amounts at a plurality of measurement positions on the substrate, the measurement positions being located on a circumference with the center of the substrate as its center; a control unit configured to adjust the transport position; Equipped with The plurality of plasma processing amounts are a first plasma processing amount that is the largest among the plurality of plasma processing amounts; a second plasma processing amount that is the smallest among the plurality of plasma processing amounts; Including, the control unit is configured to adjust the transport position by an adjustment amount d that satisfies the following formula (1) in a direction from the center of the substrate or the center of the circumference toward a measurement position at which the first plasma processing amount is measured among the plurality of measurement positions: d=(T1-T2) ２ / a…(1) where T1 is the first plasma treatment amount, T2 is the second plasma treatment amount, and a is a coefficient. Plasma treatment system.

2. the plasma treatment is an etching treatment, Each of the plurality of plasma processing amounts includes an etching rate, an etching amount, or a film thickness.

10. The plasma processing system of claim 1.

3. the plasma treatment is a film formation treatment, Each of the plurality of plasma processing amounts includes a film formation rate, a film formation amount, or a film thickness.

10. The plasma processing system of claim 1.

4. The control unit is configured to adjust the transport position when the adjustment amount d is greater than a predetermined threshold value.

10. The plasma processing system of claim 1.

5. In the formula (1), a is a function including the plasma treatment time as a variable.

10. The plasma processing system of claim 1.

6. the number of the plurality of measurement positions is 24 or more; 6. The plasma processing system according to claim 1.

7. (a) transferring a substrate to a transfer position on a substrate support surface; (b) subjecting the substrate to a plasma treatment; (c) measuring a plurality of plasma processing amounts at a plurality of measurement positions on the substrate, the measurement positions being located on a circumference of a circle centered at the center of the substrate; (d) adjusting the transfer position; Including, The plurality of plasma processing amounts are a first plasma processing amount that is the largest among the plurality of plasma processing amounts; a second plasma processing amount that is the smallest among the plurality of plasma processing amounts; Including, In the step (d), the transport position is adjusted by an adjustment amount d that satisfies the following formula (1) in a direction from the center of the substrate or the center of the circumference toward a measurement position at which the first plasma processing amount is measured among the plurality of measurement positions; d=(T1-T2) ２ / a…(1) where T1 is the first plasma treatment amount, T2 is the second plasma treatment amount, and a is a coefficient. A method for adjusting the transfer position of a substrate.

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