Magnetic sensor

Abstract

To suppress variations in the intensity of a bias magnetic field applied to a magnetoresistance effect element.SOLUTION: The magnetic field sensor 1 includes a substrate 31 having an upper surface 31a, an insulating layer 33 having an upper surface including a first inclined surface 31a and a second inclined surface 33a that are inclined with respect to the upper surface 33b of the substrate 31 and face in different directions from each other, a first MR device 33a disposed on the first inclined surface 50A, a second MR device 33b disposed on the second inclined surface 50B, and two magnetic field generators 70 disposed from the first inclined surface 33a to the second inclined surface so as to sandwich the first MR device and the second MR device and configured to apply bias magnetic fields to the first MR device and the second MR device, respectively. 33b 50B 50A 50A 50B.SELECTED DRAWING: Figure 6

Description

[Technical Field]

[0001] The present invention relates to a magnetic sensor configured so that a bias magnetic field can be applied to a magnetoresistive element. [Background technology]

[0002] In recent years, magnetic sensors have been used in a variety of applications. Known magnetic sensors include spin-valve magnetoresistive elements provided on a substrate. A spin-valve magnetoresistive element includes a fixed magnetization layer having a fixed magnetization direction, a free layer having a magnetization direction that can change depending on the direction of an applied magnetic field, and a gap layer disposed between the fixed magnetization layer and the free layer. Spin-valve magnetoresistive elements provided on a substrate are often configured to be sensitive to magnetic fields parallel to the surface of the substrate. Therefore, such magnetoresistive elements are suitable for detecting magnetic fields whose direction changes within a plane parallel to the surface of the substrate.

[0003] On the other hand, in a system including a magnetic sensor, it may be necessary to detect a magnetic field including a component perpendicular to the surface of the substrate using a magnetoresistive element provided on the substrate. In this case, the magnetoresistive element can be disposed on an inclined surface formed on the substrate to detect the magnetic field including a component perpendicular to the surface of the substrate.

[0004] Some magnetic sensors are equipped with a means for applying a bias magnetic field to the magnetoresistive element. The bias magnetic field is used, for example, to make the magnetoresistive element respond linearly to changes in the intensity of the target magnetic field, which is the magnetic field to be detected. In magnetic sensors using spin-valve magnetoresistive elements, the bias magnetic field is also used to make the free layer a single magnetic domain and to orient the magnetization direction of the free layer in a fixed direction when there is no target magnetic field.

[0005] Patent Document 1 discloses a three-axis magnetic sensor that includes an X-axis sensor, a Y-axis sensor, and a Z-axis sensor on a single substrate, in which the magnetoresistive element of the Z-axis sensor is provided on the slope of a protrusion that protrudes from the plane of the substrate. The magnetoresistive element is formed by connecting multiple magnetoresistive element bars in series with a bias magnet.

[0006] Patent Document 2 discloses a magnetic sensor including a magnetoresistive element and two magnetic field generators arranged to sandwich the magnetoresistive element. The magnetic field generators include stacked antiferromagnetic and ferromagnetic layers, and are configured to apply a bias magnetic field to the magnetoresistive element. [Prior art documents] [Patent documents]

[0007] [Patent Document 1] Japanese Patent Application Laid-Open No. 2006-308573 [Patent Document 2] Japanese Patent Application Laid-Open No. 2016-176911 Summary of the Invention [Problem to be solved by the invention]

[0008] When a magnetic field generator is formed on an inclined surface, as in the magnetic sensor disclosed in Patent Document 1, the position and inclination angle of the end of the magnetic field generator located on the inclined surface tend to vary more than when the magnetic field generator is formed on a flat surface. As a result, there is a problem that the strength of the bias magnetic field applied to the magnetoresistive element varies, causing variations in the characteristics of the magnetic sensor.

[0009] The present invention has been made in view of the above problems, and an object of the present invention is to provide a magnetic sensor capable of suppressing variations in the strength of the bias magnetic field applied to the magnetoresistive element. [Means for solving the problem]

[0010] The magnetic sensor of the present invention comprises a substrate having a reference plane, a support member having an upper surface including a first inclined surface and a second inclined surface that are inclined relative to the reference plane and face in different directions from each other, a first magnetoresistance effect element arranged on the first inclined surface, a second magnetoresistance effect element arranged on the second inclined surface, and a first magnetic field generator and a second magnetic field generator arranged from the first inclined surface to the second inclined surface and sandwiching the first magnetoresistance effect element and the second magnetoresistance effect element, and configured to apply a bias magnetic field to the first magnetoresistance effect element and the second magnetoresistance effect element, respectively. [Effects of the Invention]

[0011] In the magnetic sensor of the present invention, the first and second magnetic field generators are each disposed across the first and second inclined surfaces, thereby achieving the effect of suppressing variations in the strength of the bias magnetic field applied to the magnetoresistive element. [Brief explanation of the drawings]

[0012] [Figure 1] 1 is a perspective view showing a magnetic sensor device including a magnetic sensor according to a first embodiment of the present invention. [Figure 2] FIG. 2 is a side view showing the magnetic sensor device shown in FIG. [Figure 3] FIG. 2 is a functional block diagram showing the configuration of the magnetic sensor device shown in FIG. [Figure 4] FIG. 2 is a circuit diagram showing a circuit configuration of a first detection circuit according to the first embodiment of the present invention. [Figure 5] FIG. 3 is a circuit diagram showing a circuit configuration of a second detection circuit in the first embodiment of the present invention. [Figure 6] FIG. 1 is a plan view showing a part of a magnetic sensor according to a first embodiment of the present invention. [Figure 7] 7 is a cross-sectional view showing a part of the cross section at the position indicated by line 7-7 in FIG. 6. [Figure 8]8 is a cross-sectional view showing a part of the cross section at the position indicated by line 8-8 in FIG. 6. [Figure 9] 1 is a plan view showing a magnetoresistive element, a magnetic field generator, a lower electrode, and an upper electrode according to a first embodiment of the present invention. [Figure 10] 1 is a perspective view showing a magnetoresistive effect element according to a first embodiment of the present invention. [Figure 11] FIG. 1 is a side view showing a magnetic field generator according to a first embodiment of the present invention. [Figure 12] 1 is a cross-sectional view showing a part of a magnetic sensor according to a first embodiment of the present invention. [Figure 13] 1 is a cross-sectional view showing a part of a magnetic sensor according to a first embodiment of the present invention. [Figure 14] FIG. 2 is an explanatory diagram for explaining the shape of a side surface of a magnetic field generator in the first embodiment of the present invention. [Figure 15] 3 is a cross-sectional view showing a step in a method for manufacturing the magnetic sensor according to the first embodiment of the present invention. FIG. [Figure 16] FIG. 16 is a cross-sectional view showing a step subsequent to the step shown in FIG. [Figure 17] FIG. 10 is a plan view showing a magnetoresistive element, a magnetic field generator, a lower electrode, and an upper electrode in a first modified example of the magnetic sensor according to the first embodiment of the present invention. [Figure 18] FIG. 10 is a side view showing a magnetic field generator in a second modified example of the magnetic sensor according to the first embodiment of the present invention. [Figure 19] FIG. 10 is a side view showing a magnetic field generator in a third modified example of the magnetic sensor according to the first embodiment of the present invention. [Figure 20] FIG. 10 is a side view showing a magnetic field generator in a fourth modified example of the magnetic sensor according to the first embodiment of the present invention. [Figure 21] FIG. 10 is a side view showing a magnetic field generator in a fifth modified example of the magnetic sensor according to the first embodiment of the present invention. [Figure 22] FIG. 13 is a side view showing a magnetic field generator in a sixth modified example of the magnetic sensor according to the first embodiment of the present invention. [Figure 23] FIG. 13 is a cross-sectional view showing a part of a magnetic sensor in a seventh modified example of the magnetic sensor according to the first embodiment of the present invention. [Figure 24] FIG. 10 is a plan view showing a part of a magnetic sensor according to a second embodiment of the present invention. [Figure 25] 25 is a cross-sectional view showing a part of the cross section at the position indicated by the line 25-25 in FIG. 24. [Figure 26] FIG. 10 is a plan view showing a part of a magnetic sensor according to a third embodiment of the present invention. [Figure 27] FIG. 10 is a plan view showing a part of a magnetic sensor according to a fourth embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0013] [First embodiment] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. First, the configuration of a magnetic sensor device including a magnetic sensor according to a first embodiment of the present invention will be described with reference to Figs. 1 to 3. Fig. 1 is a perspective view showing the magnetic sensor device 100. Fig. 2 is a side view showing the magnetic sensor device 100. Fig. 3 is a functional block diagram showing the configuration of the magnetic sensor device 100.

[0014] The magnetic sensor device 100 of this embodiment includes a magnetic sensor 1 according to this embodiment and a processor 2. The magnetic sensor 1 is configured to detect a target magnetic field, which is a magnetic field to be detected by the magnetic sensor 1, and generate at least one detection signal. The magnetic sensor 1 may be a geomagnetic sensor that detects geomagnetism, a magnetic sensor for a position detection device that detects the position of a magnet moving in a predetermined direction, a magnetic sensor for an angle sensor or magnetic encoder that detects a rotating magnetic field, or a magnetic sensor for a current sensor that detects a magnetic field generated by a current to be detected.

[0015] The processor 2 is configured to generate at least one detection value corresponding to the target magnetic field based on the at least one detection signal. The processor 2 is configured, for example, by an application specific integrated circuit (ASIC).

[0016] The magnetic sensor 1 and the processor 2 each have the form of a rectangular parallelepiped chip. The magnetic sensor 1 has an upper surface 1a and a lower surface 1b located opposite each other, and four side surfaces connecting the upper surface 1a and the lower surface 1b. The processor 2 has an upper surface 2a and a lower surface 2b located opposite each other, and four side surfaces connecting the upper surface 2a and the lower surface 2b. The magnetic sensor 1 is mounted on the upper surface 2a of the processor 2, with the lower surface 1b of the magnetic sensor 1 facing the upper surface 2a of the processor 2. The magnetic sensor 1 is bonded to the processor 2, for example, by adhesive.

[0017] Here, the X direction, Y direction, and Z direction are defined as shown in FIGS. 1 and 2. The X direction, Y direction, and Z direction are perpendicular to one another. In this embodiment, the Z direction is defined as the direction perpendicular to the top surface 1a of the magnetic sensor 1, and the direction from the bottom surface 1b of the magnetic sensor 1 toward the top surface 1a. The direction opposite the X direction is defined as the -X direction, the direction opposite the Y direction is defined as the -Y direction, and the direction opposite the Z direction is defined as the -Z direction.

[0018] Hereinafter, a position further in the Z direction than the reference position will be referred to as "above," and a position on the opposite side of "above" than the reference position will be referred to as "below." Furthermore, with regard to the components of the magnetic sensor 1, the surface located at the end in the Z direction will be referred to as the "top surface," and the surface located at the end in the -Z direction will be referred to as the "bottom surface." Furthermore, the expression "when viewed from a specified direction (e.g., the Z direction)" means viewing the object from a position away from the specified direction or in one direction parallel to the specified direction.

[0019] As shown in FIG. 2, the U direction and V direction are defined as follows: The U direction is the direction rotated from the Y direction toward the -Z direction. The V direction is the direction rotated from the Y direction toward the Z direction. In this embodiment, the U direction is defined as the direction rotated by α from the Y direction toward the -Z direction, and the V direction is defined as the direction rotated by α from the Y direction toward the Z direction. Note that α is an angle greater than 0° and smaller than 90°. The direction opposite the U direction is defined as the -U direction, and the direction opposite the V direction is defined as the -V direction. The U direction and V direction are each perpendicular to the X direction.

[0020] The magnetic sensor 1 has a plurality of first pads (electrode pads) provided on the upper surface 1a. The processor 2 has a plurality of second pads (electrode pads) provided on the upper surface 2a. In the magnetic sensor 1, two corresponding pads of the plurality of first pads and the plurality of second pads are connected to each other by a bonding wire.

[0021] The magnetic sensor 1 includes a first detection circuit 10 and a second detection circuit 20. The first and second detection circuits 10, 20 are connected to the processor 2 via a plurality of first pads, a plurality of second pads, and a plurality of bonding wires.

[0022] Each of the first and second detection circuits 10 and 20 includes a plurality of magnetic detection elements and is configured to detect a target magnetic field and generate at least one detection signal. In this embodiment, the plurality of magnetic detection elements are particularly a plurality of magnetoresistive effect elements. Hereinafter, the magnetoresistive effect elements will be referred to as MR elements.

[0023] Next, the circuit configurations of the first and second detection circuits 10, 20 will be described with reference to Figures 4 and 5. Figure 4 is a circuit diagram showing the circuit configuration of the first detection circuit 10. Figure 5 is a circuit diagram showing the circuit configuration of the second detection circuit 20.

[0024] The first detection circuit 10 is configured to detect a component of the target magnetic field parallel to the U direction and generate at least one first detection signal corresponding to this component. The second detection circuit 20 is configured to detect a component of the target magnetic field parallel to the V direction and generate at least one second detection signal corresponding to this component.

[0025] 4, the first detection circuit 10 includes four resistor units R11, R12, R13, and R14, a power supply terminal V1, a ground terminal G1, a first output terminal E11, and a second output terminal E12. The multiple MR elements of the first detection circuit 10 constitute the resistor units R11, R12, R13, and R14.

[0026] The resistor R11 is provided between the power supply terminal V1 and the first output terminal E11. The resistor R12 is provided between the first output terminal E11 and the ground terminal G1. The resistor R13 is provided between the second output terminal E12 and the ground terminal G1. The resistor R14 is provided between the power supply terminal V1 and the second output terminal E12.

[0027] 5, the second detection circuit 20 includes four resistor units R21, R22, R23, and R24, a power supply terminal V2, a ground terminal G2, a first output terminal E21, and a second output terminal E22. The multiple MR elements of the second detection circuit 20 configure the resistor units R21, R22, R23, and R24.

[0028] The resistor R21 is provided between the power supply terminal V2 and the first output terminal E21. The resistor R22 is provided between the first output terminal E21 and the ground terminal G2. The resistor R23 is provided between the second output terminal E22 and the ground terminal G2. The resistor R24 ​​is provided between the power supply terminal V2 and the second output terminal E22.

[0029] A voltage or current of a predetermined magnitude is applied to each of the power supply terminals V1 and V2, and each of the ground terminals G1 and G2 is connected to the ground.

[0030] Hereinafter, the multiple MR elements of the first detection circuit 10 will be referred to as multiple first MR elements 50A, and the multiple MR elements of the second detection circuit 20 will be referred to as multiple second MR elements 50B. Because the first and second detection circuits 10 and 20 are components of the magnetic sensor 1, it can also be said that the magnetic sensor 1 includes multiple first MR elements 50A and multiple second MR elements 50B. Furthermore, any MR element will be represented by the symbol 50.

[0031] In this embodiment, the MR element 50 is a spin-valve MR element. The MR element 50 includes a fixed magnetization layer having a fixed magnetization direction, a free layer having a magnetization direction that can be changed depending on the direction of a target magnetic field, and a gap layer disposed between the fixed magnetization layer and the free layer. The MR element 50 may be a TMR (tunneling magnetoresistance) element or a GMR (giant magnetoresistance) element. In a TMR element, the gap layer is a tunnel barrier layer. In a GMR element, the gap layer is a nonmagnetic conductive layer. In the MR element 50, the resistance value varies depending on the angle between the magnetization direction of the free layer and the magnetization direction of the fixed magnetization layer. When this angle is 0°, the resistance value is minimum, and when this angle is 180°, the resistance value is maximum. In each MR element 50, the free layer has shape anisotropy such that the easy axis of magnetization is perpendicular to the magnetization direction of the fixed magnetization layer.

[0032] 4 and 5, multiple solid arrows overlapping each resistance portion represent the magnetization direction of the magnetization fixed layer of the MR element 50. Additionally, multiple open arrows overlapping each resistance portion represent the magnetization direction of the free layer of the MR element 50 when no target magnetic field is applied to the MR element 50.

[0033] In the example shown in FIG. 4, the magnetization direction of the magnetization fixed layer in each of the resistor units R11 and R13 is the U direction. The magnetization direction of the magnetization fixed layer in each of the resistor units R12 and R14 is the -U direction. Furthermore, the free layer of each of the multiple first MR elements 50A has shape anisotropy in which the magnetization easy axis direction is parallel to the X direction. When no target magnetic field is applied to the first MR element 50A, the magnetization direction of the free layer in each of the resistor units R11 and R12 is the X direction. In the above case, the magnetization direction of the free layer in each of the resistor units R13 and R14 is the -X direction.

[0034] In the example shown in FIG. 5, the magnetization direction of the magnetization fixed layer in each of the resistor units R21 and R23 is the V direction. The magnetization direction of the magnetization fixed layer in each of the resistor units R22 and R24 is the −V direction. Furthermore, the free layer of each of the second MR elements 50B has shape anisotropy in which the magnetization easy axis direction is parallel to the X direction. When no target magnetic field is applied to the second MR element 50B, the magnetization direction of the free layer in each of the resistor units R21 and R22 is the X direction. In the above case, the magnetization direction of the free layer in each of the resistor units R23 and R24 is the −X direction.

[0035] The magnetic sensor 1 further includes at least one magnetic field generator that generates a bias magnetic field to be applied to at least one MR element 50. In particular, in this embodiment, the magnetic sensor 1 includes a plurality of magnetic field generators 70 as the at least one magnetic field generator.

[0036] 4, arrows labeled M11, M12, M13, and M14 indicate the directions of bias magnetic fields applied to the plurality of first MR elements 50A by the plurality of magnetic field generators 70. In the resistor units R11 and R12, a bias magnetic field in the X direction is applied to the plurality of first MR elements 50A by the plurality of magnetic field generators 70. In the resistor units R13 and R14, a bias magnetic field in the −X direction is applied to the plurality of first MR elements 50A by the plurality of magnetic field generators 70.

[0037] 5, arrows labeled M21, M22, M23, and M24 indicate the directions of bias magnetic fields applied to the second MR elements 50B by the magnetic field generators 70. In the resistor units R21 and R22, a bias magnetic field in the X direction is applied to the second MR elements 50B by the magnetic field generators 70. In the resistor units R23 and R24, a bias magnetic field in the −X direction is applied to the second MR elements 50B by the magnetic field generators 70.

[0038] The magnetization direction of the magnetization pinned layer, the direction of the easy axis of magnetization of the free layer, and the direction of the bias magnetic field applied to the MR element 50 by the multiple magnetic field generators 70 may be slightly deviated from the above-mentioned directions in view of the accuracy of manufacturing the MR element 50 and the magnetic field generators 70. The magnetization of the magnetization pinned layer may be configured to include a magnetization component whose main component is the above-mentioned direction. In this case, the magnetization direction of the magnetization pinned layer is the above-mentioned direction or approximately the above-mentioned direction.

[0039] Next, the first and second detection signals will be described. First, the first detection signal will be described with reference to FIG. 4. When the intensity of the component of the target magnetic field parallel to the U direction changes, the resistance values ​​of the resistors R11 to R14 of the first detection circuit 10 change such that the resistance values ​​of the resistors R11 and R13 increase while the resistance values ​​of the resistors R12 and R14 decrease, or the resistance values ​​of the resistors R11 and R13 decrease while the resistance values ​​of the resistors R12 and R14 increase. This causes a change in the potential of each of the first and second output terminals E11 and E12. The first detection circuit 10 is configured to generate a signal corresponding to the potential of the first output terminal E11 as the first detection signal S11 and generate a signal corresponding to the potential of the second output terminal E12 as the first detection signal S12.

[0040] Next, the second detection signal will be described with reference to FIG. 5. When the intensity of the component of the target magnetic field parallel to the V direction changes, the resistance values ​​of the resistors R21 to R24 of the second detection circuit 20 change such that the resistance values ​​of the resistors R21 and R23 increase while the resistance values ​​of the resistors R22 and R24 decrease, or the resistance values ​​of the resistors R21 and R23 decrease while the resistance values ​​of the resistors R22 and R24 increase. This causes a change in the potential of each of the first and second output terminals E21 and E22. The second detection circuit 20 is configured to generate a signal corresponding to the potential of the first output terminal E21 as the second detection signal S21 and generate a signal corresponding to the potential of the second output terminal E22 as the second detection signal S22.

[0041] Next, the operation of the processor 2 will be described. The processor 2 is configured to generate a first detection value and a second detection value based on the first detection signals S11, S12 and the second detection signals S21, S22. The first detection value is a detection value corresponding to a component of the target magnetic field in a direction parallel to the Y direction. The second detection value is a detection value corresponding to a component of the target magnetic field in a direction parallel to the Z direction. Hereinafter, the first detection value will be represented by the symbol Sy, and the second detection value will be represented by the symbol Sz.

[0042] The processor 2 generates the first and second detection values ​​Sy and Sz, for example, as follows: The processor 2 first generates a value S1 by a calculation that includes determining the difference S11-S12 between the first detection signal S11 and the first detection signal S12, and also generates a value S2 by a calculation that includes determining the difference S21-S22 between the second detection signal S21 and the second detection signal S22. Next, the processor 2 calculates the values ​​S3 and S4 using the following equations (1) and (2).

[0043] S3 = (S2 + S1) / (2cosα) … (1) S4 = (S2 - S1) / (2 sin α) ... (2)

[0044] The first detection value Sy may be the value S3 itself, or may be the value S3 to which predetermined corrections such as gain adjustment and offset adjustment have been made. Similarly, the second detection value Sz may be the value S4 itself, or may be the value S4 to which predetermined corrections such as gain adjustment and offset adjustment have been made.

[0045] Next, the specific structure of the magnetic sensor 1 will be described in detail with reference to Fig. 6 to Fig. 8. Fig. 6 is a plan view showing a part of the magnetic sensor 1. Fig. 7 shows a part of a cross section taken along line 7-7 in Fig. 6. Fig. 8 shows a part of a cross section taken along line 8-8 in Fig. 6.

[0046] The magnetic sensor 1 includes a substrate 31 having an upper surface 31a, insulating layers 32, 33, 34, 35, 36, 37, and 38, a plurality of lower electrodes 41A, a plurality of lower electrodes 41B, a plurality of upper electrodes 42A, and a plurality of upper electrodes 42B. The upper surface 31a of the substrate 31 is parallel to the XY plane. The Z direction is also a direction perpendicular to the upper surface 31a of the substrate 31. In this embodiment, the upper surface 31a of the substrate 31 may be used as a "reference plane" that is a reference for the arrangement and shape of the components of the magnetic sensor 1.

[0047] Insulating layers 32 and 33 are stacked in this order on substrate 31. A plurality of lower electrodes 41A and a plurality of lower electrodes 41B are disposed on insulating layer 33. Insulating layer 34 is disposed on insulating layer 33 around the plurality of lower electrodes 41A and the plurality of lower electrodes 41B. A plurality of first MR elements 50A are disposed on the plurality of lower electrodes 41A. A plurality of second MR elements 50B are disposed on the plurality of lower electrodes 41B. Insulating layer 35 is disposed on the plurality of lower electrodes 41A, the plurality of lower electrodes 41B, and insulating layer 34 around the plurality of first MR elements 50A and the plurality of second MR elements 50B.

[0048] The plurality of magnetic field generators 70 are embedded in the insulating layer 35. Each of the plurality of magnetic field generators 70 is disposed at a distance from the first MR element 50A and the lower electrode 41A, and is also disposed at a distance from the second MR element 50B and the lower electrode 41B. The magnetic sensor 1 may further include insulating films interposed between each of the plurality of magnetic field generators 70 and each of the plurality of first MR elements 50A, between each of the plurality of magnetic field generators 70 and each of the plurality of second MR elements 50B, between each of the plurality of magnetic field generators 70 and each of the plurality of lower electrodes 41A, and between each of the plurality of magnetic field generators 70 and each of the plurality of lower electrodes 41B.

[0049] The insulating layer 36 is disposed on the insulating layer 35 and the plurality of magnetic field generators 70. The insulating layer 36 also has a plurality of openings exposing the top surfaces of the plurality of first MR elements 50A and a plurality of openings exposing the top surfaces of the plurality of second MR elements 50B. The plurality of upper electrodes 42A are disposed on the plurality of first MR elements 50A and the insulating layer 36. The plurality of upper electrodes 42B are disposed on the plurality of second MR elements 50B and the insulating layer 36. The insulating layer 37 is disposed on the insulating layer 36 around the plurality of upper electrodes 42A and around the plurality of upper electrodes 42B. The insulating layer 38 is disposed on the plurality of upper electrodes 42A, the plurality of upper electrodes 42B, and the insulating layer 37.

[0050] In this embodiment, each of the plurality of lower electrodes 41A and the plurality of upper electrodes 42A is in contact with the first MR element 50A. Each of the plurality of lower electrodes 41B and the plurality of upper electrodes 42B is in contact with the second MR element 50B. The insulating layer 35 is interposed between the plurality of magnetic field generators 70 and the plurality of lower electrodes 41A and the plurality of lower electrodes 41B, insulating the plurality of magnetic field generators 70 from the plurality of lower electrodes 41A and the plurality of lower electrodes 41B. The insulating layer 36 is interposed between the plurality of magnetic field generators 70 and the plurality of upper electrodes 42A and the plurality of upper electrodes 42B, insulating the plurality of magnetic field generators 70 from the plurality of upper electrodes 42A and the plurality of upper electrodes 42B. The insulating layer 35 covers a portion of each of the plurality of first MR elements 50A and the plurality of second MR elements 50B. The insulating layer 36 may also cover a portion of each of the plurality of first MR elements 50A and the plurality of second MR elements 50B.

[0051] The magnetic sensor 1 includes a support member that supports a plurality of first MR elements 50A and a plurality of second MR elements 50B. The support member has at least one inclined surface that is inclined with respect to the upper surface 31a of the substrate 31. In particular, in this embodiment, the support member is formed of an insulating layer 33. The insulating layer 33 is disposed substantially on the upper surface 31a of the substrate 31. Note that FIG. 6 shows the insulating layer 33, the plurality of first MR elements 50A, the plurality of second MR elements 50B, and the plurality of magnetic field generators 70, which are components of the magnetic sensor 1.

[0052] The insulating layer 33 has a plurality of convex surfaces 33c that protrude in a direction (Z direction) away from the upper surface 31a of the substrate 31. Each of the plurality of convex surfaces 33c extends in a direction parallel to the X direction. The overall shape of the convex surface 33c is a semi-cylindrical curved surface formed by shifting the curved shape (arch shape) of the convex surface 33c shown in Figures 7 and 8 along a direction parallel to the X direction. The plurality of convex surfaces 33c are also arranged at predetermined intervals in a direction parallel to the Y direction.

[0053] Each of the multiple convex surfaces 33c has an upper end farthest from the upper surface 31a of the substrate 31. In this embodiment, the upper end of each of the multiple convex surfaces 33c extends in a direction parallel to the X direction. Here, attention is focused on any one of the multiple convex surfaces 33c. The convex surface 33c includes a first inclined surface 33a and a second inclined surface 33b. The first inclined surface 33a is the surface of the convex surface 33c that is closer to the Y direction than the upper end of the convex surface 33c. The second inclined surface 33b is the surface of the convex surface 33c that is closer to the -Y direction than the upper end of the convex surface 33c. In FIG. 6, the boundary between the first inclined surface 33a and the second inclined surface 33b is indicated by a dotted line.

[0054] The upper end of convex surface 33c may be the boundary between first inclined surface 33a and second inclined surface 33b. In this case, the dotted line shown in Figure 6 indicates the upper end of convex surface 33c.

[0055] The top surface 31a of the substrate 31 is parallel to the XY plane. The first inclined surface 33a and the second inclined surface 33b are each inclined with respect to the top surface 31a of the substrate 31, i.e., the XY plane. In a cross section perpendicular to the top surface 31a of the substrate 31, the distance between the first inclined surface 33a and the second inclined surface 33b decreases with increasing distance from the top surface 31a of the substrate 31.

[0056] In this embodiment, since there are multiple convex surfaces 33c, there are also multiple first inclined surfaces 33a and multiple second inclined surfaces 33b. The insulating layer 33 has multiple first inclined surfaces 33a and multiple second inclined surfaces 33b.

[0057] The insulating layer 33 further has a flat surface 33d surrounding the plurality of convex surfaces 33c. The flat surface 33d is substantially parallel to the upper surface 31a of the substrate 31. Each of the plurality of convex surfaces 33c protrudes from the flat surface 33d in the Z direction. In this embodiment, the plurality of convex surfaces 33c are arranged at predetermined intervals. Therefore, a flat surface 33d exists between two convex surfaces 33c adjacent to each other in a direction parallel to the Y direction.

[0058] The insulating layer 33 may have a groove recessed from the flat surface 33d toward the −Z direction. In this case, the plurality of convex surfaces 33c may be present within the groove.

[0059] The plurality of lower electrodes 41A are disposed on the plurality of first inclined surfaces 33a. The plurality of lower electrodes 41B are disposed on the plurality of second inclined surfaces 33b. As described above, the first inclined surface 33a and the second inclined surface 33b are each inclined with respect to the reference plane, i.e., the upper surface 31a of the substrate 31. Therefore, the upper surface of each of the plurality of lower electrodes 41A and the plurality of lower electrodes 41B is also inclined with respect to the upper surface 31a of the substrate 31. Therefore, it can be said that the plurality of first MR elements 50A and the plurality of second MR elements 50B are disposed on inclined surfaces inclined with respect to the upper surface 31a of the substrate 31. The insulating layer 33 is a member for supporting each of the plurality of first MR elements 50A and the plurality of second MR elements 50B so that they are inclined with respect to the upper surface 31a of the substrate 31.

[0060] The multiple magnetic field generators 70 include multiple pairs of magnetic field generators 70, each consisting of two magnetic field generators 70. The two magnetic field generators 70 are arranged at a predetermined interval in a direction parallel to the X direction, sandwiching one first MR element 50A and one second MR element 50B between them. The two magnetic field generators 70 are configured to apply a bias magnetic field to the one first MR element 50A and one second MR element 50B located between them. This bias magnetic field contains a component parallel to the X direction as its main component.

[0061] Each of the multiple magnetic field generators 70 is disposed on two adjacent convex surfaces 33c in a direction parallel to the Y direction. Each of the multiple magnetic field generators 70 is disposed from the first inclined surface 33a of one of the two convex surfaces 33c to the second inclined surface 33b of the other of the two convex surfaces 33c. Each of the multiple magnetic field generators 70 includes a portion located on the first inclined surface 33a of one of the two convex surfaces 33c, a portion located on the second inclined surface 33b of the other of the two convex surfaces 33c, and a portion located on the flat surface 33d interposed between the two convex surfaces 33c. Each of the multiple magnetic field generators 70 has a lower surface shaped along the first inclined surface 33a and the second inclined surface 33b.

[0062] 6, the multiple magnetic field generators 70 are arranged in a row in both the X and Y directions. Each of the multiple first MR elements 50A and each of the multiple second MR elements 50B are disposed between two adjacent magnetic field generators 70 in a direction parallel to the X direction. On one first inclined surface 33a, the multiple first MR elements 50A are arranged in a row in a direction parallel to the X direction. On one second inclined surface 33b, the multiple second MR elements 50B are arranged in a row in a direction parallel to the X direction.

[0063] A row made up of a plurality of first MR elements 50A and a row made up of a plurality of second MR elements 50B are alternately arranged in a direction parallel to the Y direction.

[0064] The multiple first MR elements 50A are connected in series by multiple lower electrodes 41A and multiple upper electrodes 42A. The multiple second MR elements 50B are connected in series by multiple lower electrodes 41B and multiple upper electrodes 42B. Here, a method for connecting the multiple first MR elements 50A and a method for connecting the multiple second MR elements 50B will be described in detail with reference to FIG. 9.

[0065] First, a method of connecting a plurality of first MR elements 50A will be described. As shown in FIG. 9, each lower electrode 41A has an elongated shape. A gap is formed between two lower electrodes 41A adjacent in the longitudinal direction of the lower electrodes 41A. A first MR element 50A is disposed on the upper surface of each lower electrode 41A near both ends in the longitudinal direction. Furthermore, each upper electrode 42A has an elongated shape and is disposed on two lower electrodes 41A adjacent in the longitudinal direction of the lower electrode 41A to electrically connect the two adjacent first MR elements 50A.

[0066] Although not shown, one first MR element 50A located at an end of a row of a plurality of first MR elements 50A arranged in a row is connected to another first MR element 50A located at an end of the row of a plurality of adjacent first MR elements 50A in a direction intersecting the longitudinal direction of the lower electrode 41A. These two first MR elements 50A are connected to each other by an electrode not shown. The electrode not shown may be an electrode connecting the bottom surfaces or top surfaces of the two first MR elements 50A.

[0067] The above description of the method for connecting the plurality of first MR elements 50 A also applies to the method for connecting the plurality of second MR elements 50 B. If the first MR element 50 A, the lower electrode 41 A, and the upper electrode 42 A in the above description are replaced with the second MR element 50 B, the lower electrode 41 B, and the upper electrode 42 B, respectively, the description becomes a method for connecting the plurality of second MR elements 50 B.

[0068] 9 shows an example in which two magnetic field generators 70 are arranged between two first MR elements 50A and two second MR elements 50B. However, one magnetic field generator 70 may be arranged between two first MR elements 50A and two second MR elements 50B. Also, FIG. 9 shows an example in which the magnetic field generator 70 overlaps with the lower electrodes 41A and 41B when viewed from the Z direction. However, the magnetic field generator 70 does not have to overlap with the lower electrodes 41A and 41B when viewed from the Z direction.

[0069] Next, the configuration of the MR element 50 will be described in more detail with reference to FIG. 10. In FIG. 10, reference numeral 52 denotes a magnetization pinned layer, reference numeral 53 denotes a gap layer, and reference numeral 54 denotes a free layer. The MR element 50 further includes an antiferromagnetic layer 51. The antiferromagnetic layer 51, the magnetization pinned layer 52, the gap layer 53, and the free layer 54 are stacked in this order from the lower electrode 41A (lower electrode 41B) toward the upper electrode 42A (upper electrode 42B). The antiferromagnetic layer 51 is made of an antiferromagnetic material and generates exchange coupling with the magnetization pinned layer 52 to fix the magnetization direction of the magnetization pinned layer 52. The magnetization pinned layer 52 may be a so-called self-pinned type pinned layer (synthetic ferri-pinned layer, SFP layer). The self-pinned type pinned layer has a laminated ferri-structure in which a ferromagnetic layer, a non-magnetic intermediate layer, and a ferromagnetic layer are stacked, and the two ferromagnetic layers are antiferromagnetically coupled. When the magnetization fixed layer 52 is a self-pinned type fixed layer, the antiferromagnetic layer 51 may be omitted.

[0070] The layers 51 to 54 in the MR element 50 may be arranged upside down relative to the arrangement shown in FIG.

[0071] In the first MR element 50A, the antiferromagnetic layer 51, the magnetization fixed layer 52, the gap layer 53, and the free layer 54 are stacked in a direction intersecting the first inclined surface 33a (see FIGS. 6 and 7), which may be perpendicular to the first inclined surface 33a.

[0072] In the second MR element 50B, the antiferromagnetic layer 51, the magnetization fixed layer 52, the gap layer 53, and the free layer 54 are stacked in a direction intersecting the second inclined surface 33b (see FIGS. 6 and 7), which may be perpendicular to the second inclined surface 33b.

[0073] Next, the configuration of the magnetic field generator 70 will be described with reference to Fig. 11. Fig. 11 is a side view showing the magnetic field generator 70. The magnetic field generator 70 includes a ferromagnetic part 73 and an antiferromagnetic part 72 that is in contact with the ferromagnetic part 73 and exchange-coupled with the ferromagnetic part 73.

[0074] The ferromagnetic portion 73 has magnetization as a whole of the ferromagnetic portion 73. The magnetization of the whole of the ferromagnetic portion 73 is the volume average of the vector sum of the magnetic moments of each unit, such as an atom or a crystal lattice, in the whole of the ferromagnetic portion 73. Hereinafter, the magnetization of the whole of the ferromagnetic portion 73 will be simply referred to as the magnetization of the ferromagnetic portion 73.

[0075] In the magnetic field generator 70, the direction of magnetization of the ferromagnetic part 73 is determined by exchange coupling between the antiferromagnetic part 72 and the ferromagnetic part 73. The ferromagnetic part 73 and the antiferromagnetic part 72 generate a bias magnetic field that is applied to the MR element 50 based on the magnetization of the ferromagnetic part 73. The magnetic field generator 70 configured in this manner has high resistance to external disturbance magnetic fields.

[0076] The ferromagnetic portion 73 is made of a ferromagnetic material containing one or more elements of Co, Fe, and Ni. Examples of such ferromagnetic materials include CoFe, CoFeB, and CoNiFe. The antiferromagnetic portion 72 is made of an antiferromagnetic material such as IrMn or PtMn.

[0077] The magnetic field generator 70 further includes a buffer layer 71 and a cap layer 74. The buffer layer 71, the antiferromagnetic portion 72, the ferromagnetic portion 73, and the cap layer 74 are stacked in this order. The buffer layer 71 and the cap layer 74 are each made of a non-magnetic metal material such as Ru, Ta, Cu, or Cr.

[0078] Next, features related to the shapes and arrangements of the MR element 50 and the magnetic field generator 70 will be described with reference to FIGS. 6 to 9 and 12 to 14. FIGS. 12 and 13 are cross-sectional views showing a portion of the magnetic sensor 1. FIG. 12 shows a cross section parallel to the XZ plane and perpendicular to the upper surface 31a of the substrate 31, intersecting the first MR element 50A and the magnetic field generator 70. FIG. 13 shows a cross section parallel to the YZ plane and perpendicular to the upper surface 31a of the substrate 31, intersecting the magnetic field generator 70. The cross section shown in FIG. 13 corresponds to the "second cross section" in the present invention. FIG. 14 is an explanatory diagram for explaining the shape of the side surface of the magnetic field generator 70.

[0079] Hereinafter, even when the description is made with reference to FIG. 12, the features common to the first MR element 50A and the second MR element 50B will be described as the features of the MR element 50.

[0080] The magnetic field generator 70 is disposed with a gap between it and the MR element 50. An insulating layer 35 is interposed between the MR element 50 and the magnetic field generator 70.

[0081] The dimension of the magnetic field generator 70 in a direction parallel to the Y direction is larger than the dimension of the MR element 50 in a direction parallel to the Y direction. At least a portion of the MR element 50 overlaps with the magnetic field generator 70 when viewed from the X direction. In particular, in this embodiment, at least a portion of the free layer 54 of the MR element 50 may overlap with the ferromagnetic portion 73 of the magnetic field generator 70 when viewed from the X direction.

[0082] The MR element 50 has a bottom surface 50a facing the first inclined surface 33a or the second inclined surface 33b, a top surface 50b opposite to the bottom surface 50a, and four side surfaces connecting the bottom surface 50a and the top surface 50b.

[0083] The side surface 50c is located at the end of the MR element 50 in the −Y direction. The side surface 50d is located at the end of the MR element 50 in the Y direction. The side surface 50e is located at the end of the MR element 50 in the X direction. The side surface 50f is located at the end of the MR element 50 in the −X direction.

[0084] As shown in FIG. 12, each of the side surfaces 50e and 50f of the MR element 50 is inclined with respect to the upper surface 31a of the substrate 31. In one MR element 50, the distance between the side surface 50e and the side surface 50f in a direction parallel to the X direction decreases with increasing distance from the upper surface 31a of the substrate 31. Each of the side surfaces 50c and 50d of the MR element 50 is inclined with respect to the upper surface 31a of the substrate 31. In the first MR element 50A, the distance between the side surface 50c and the side surface 50d decreases with increasing distance from the first inclined surface 33a. In the second MR element 50B, the distance between the side surface 50c and the side surface 50d decreases with increasing distance from the second inclined surface 33b.

[0085] The magnetic field generator 70 has a bottom surface 70a facing the support member, a top surface 70b opposite the bottom surface 70a, and four side surfaces 70c, 70d, 70e, and 70f connecting the bottom surface 70a and the top surface 70b. The side surface 70c is located at the end of the magnetic field generator 70 in the -Y direction. The side surface 70c is also located on the first inclined surface 33a. The side surface 70d is located at the end of the magnetic field generator 70 in the Y direction. The side surface 70d is also located on the second inclined surface 33b. The side surface 70e is located at the end of the magnetic field generator 70 in the X direction. The side surface 70f is located at the end of the magnetic field generator 70 in the -X direction.

[0086] As shown in Fig. 12, each of the side surfaces 70e, 70f of the magnetic field generator 70 is inclined with respect to the upper surface 31a of the substrate 31. In one magnetic field generator 70, the distance between the side surface 70e and the side surface 70f in a direction parallel to the X direction increases with increasing distance from the upper surface 31a of the substrate 31. As shown in Fig. 13, each of the side surfaces 70c, 70d of the magnetic field generator 70 is inclined with respect to the upper surface 31a of the substrate 31. In one magnetic field generator 70, the distance between the side surface 70c and the side surface 70d in a direction parallel to the Y direction increases with increasing distance from the upper surface 31a of the substrate 31.

[0087] The magnetic field generator 70 has a first end Ed1 and a second end Ed2 located at both ends of the magnetic field generator 70 in a direction parallel to the Y direction. The first end Ed1 is located at the position where the top surface 70b and the side surface 70c of the magnetic field generator 70 intersect. The first end Ed1 is located on the first inclined surface 33a. The second end Ed2 is located at the position where the top surface 70b and the side surface 70d of the magnetic field generator 70 intersect. The second end Ed2 is located on the second inclined surface 33b. The top surface 70b connects the first end Ed1 and the second end Ed2.

[0088] The distance from the upper surface 31a of the substrate 31 to the first end Ed1 may be the same as or different from the distance from the upper surface 31a of the substrate 31 to the second end Ed2. In this embodiment, the distance from the upper surface 31a of the substrate 31 to the first end Ed1 is the same as or approximately the same as the distance from the upper surface 31a of the substrate 31 to the second end Ed2.

[0089] In this embodiment, the angle that the convex surface 33c forms with the upper surface 31a of the substrate 31 at any position on the convex surface 33c varies depending on the distance from the upper surface 31a of the substrate 31 to the any position. Here, the angle that the convex surface 33c forms with the upper surface 31a of the substrate 31 is represented by the symbol θ. The angle θ is assumed to be between 0° and 90°. Furthermore, the position on the convex surface 33c closest to the first end Ed1 is defined as a first position P1, the position on the convex surface 33c closest to the second end Ed2 is defined as a second position P2, an arbitrary position on the convex surface 33c (first inclined surface 33a) that overlaps with the first MR element 50A when viewed from the Z direction is defined as a third position P3, and an arbitrary position on the convex surface 33c (second inclined surface 33b) that overlaps with the second MR element 50B when viewed from the Z direction is defined as a fourth position P4. Furthermore, the angle θ at the first position P1 is represented by the symbol θ1, the angle θ at the second position P2 is represented by the symbol θ2, the angle θ at the third position P3 is represented by the symbol θ3, and the angle θ at the fourth position P4 is represented by the symbol θ4.

[0090] Each of the angles θ1 and θ2 in the YZ cross section intersecting with the magnetic field generator 70 is smaller than the angles θ3 and θ4 in the YZ cross section intersecting with the MR element 50. Each of the angles θ1 and θ2 may be within a range of 0° to 40°, for example, as long as the requirement that each of the angles θ1 and θ2 is smaller than the angles θ3 and θ4 is satisfied.

[0091] Next, a brief description will be given of a method for manufacturing the magnetic sensor 1 according to this embodiment. The process for manufacturing the magnetic sensor 1 includes a step of forming an insulating layer 33 as a support member, a step of forming a plurality of MR elements 50, and a step of forming a plurality of magnetic field generators 70. The plurality of MR elements 50 and the plurality of magnetic field generators 70 are formed on the insulating layer 33.

[0092] First, a description will be given of a process for forming the plurality of MR elements 50. In the process for forming the plurality of MR elements 50, first, a plurality of initial MR elements are formed, which will later become the plurality of MR elements 50. Each of the plurality of initial MR elements includes an initial magnetization fixed layer, which will later become the magnetization fixed layer 52, an antiferromagnetic layer 51, a gap layer 53, and a free layer 54.

[0093] Next, the magnetization direction of the initial magnetization pinned layer is fixed using laser light and an external magnetic field containing a component in a predetermined direction. For example, for the initial MR elements that will later become the first MR elements 50A that constitute the resistor units R11 and R13 of the first detection circuit 10, laser light is irradiated onto the initial MR elements while applying an external magnetic field in the Y direction. The laser light is irradiated so that the temperature of the initial MR elements irradiated with the laser light becomes equal to or higher than the blocking temperature of the antiferromagnetic layer 51. The temperature of the initial MR elements can be adjusted, for example, by the intensity and pulse width of the laser light.

[0094] The external magnetic field in the Y direction can be divided into a component in the U direction and a component in a direction perpendicular to the U direction. After irradiation with laser light, when the temperature of the initial MR elements drops below the blocking temperature, the magnetization direction of the initial magnetization fixed layer is fixed in the U direction. As a result, the initial magnetization fixed layer becomes the magnetization fixed layer 52, and the initial MR element becomes the first MR element 50A.

[0095] Furthermore, in the initial MR elements that will later become the first MR elements 50A that constitute the resistor units R12, R14 of the first detection circuit 10, the magnetization direction of the initial magnetization pinned layer of each of the initial MR elements can be pinned to the -U direction by using an external magnetic field in the -Y direction. In this manner, the first MR elements 50A are formed. The magnetization direction of the magnetization pinned layer 52 of each of the second MR elements 50B that constitute each of the resistor units R21 to R24 of the second detection circuit 20 is also pinned in the same manner as the magnetization pinned layer 52 of each of the first MR elements 50A.

[0096] The MR element 50 is completed by fixing the direction of magnetization of the magnetization fixed layer 52 and then patterning the laminated film by etching so that the side surfaces of the MR element 50 are formed in the laminated film. Note that a step of fixing the direction of magnetization of the initial magnetization fixed layer may be performed after forming the side surfaces of the MR element 50 in the laminated film. Next, an insulating layer 35 is formed around the plurality of first MR elements 50A and the plurality of second MR elements 50B.

[0097] Next, a process for forming the plurality of magnetic field generators 70 will be described with reference to Fig. 15 and Fig. 16. Fig. 15 and Fig. 16 show a stack in the process of manufacturing the magnetic sensor 1. The process for forming the plurality of magnetic field generators 70 may be performed after the plurality of MR elements 50 and the insulating layer 35 are formed.

[0098] In the step of forming the plurality of magnetic field generators 70, first, as shown in FIG. 15 , a plurality of photoresist masks 61 are formed on the MR element 50 and the insulating layer 35. The plurality of photoresist masks are formed by patterning a photoresist layer applied to the MR element 50 and the insulating layer 35. Each of the plurality of photoresist masks 61 is formed on the convex surface 33 c but not on the flat surface 33 d. Next, using the plurality of photoresist masks 61 as an etching mask, the insulating layer 35 is etched by, for example, ion milling so that a plurality of grooves are formed in the insulating layer 35. The plurality of grooves have shapes corresponding to the plurality of magnetic field generators 70.

[0099] 16, while leaving the photoresist masks 61, a plurality of initial magnetic field generators 70P, which will later become the magnetic field generators 70, are formed so that they are housed in the grooves. Each of the initial magnetic field generators 70P includes at least an initial ferromagnetic portion, which will later become the ferromagnetic portion 73, and an antiferromagnetic portion 72. Next, the photoresist masks 61 are removed.

[0100] Next, the magnetization direction of the initial ferromagnetic portion is fixed using a laser beam and an external magnetic field containing a component in a predetermined direction. The method for fixing the magnetization direction of the initial ferromagnetic portion is similar to the method for fixing the magnetization direction of the initial magnetization fixed layer. That is, while applying an external magnetic field, each of the initial magnetic field generators 70P is irradiated with a laser beam. The laser beam is irradiated so that the temperature of the initial magnetic field generators 70P irradiated with the laser beam is equal to or higher than the blocking temperature of the antiferromagnetic portion 72. The temperature of the initial magnetic field generators 70P can be adjusted, for example, by the temperature and pulse width of the laser beam. After irradiation with the laser beam, when the temperature of the initial magnetic field generators 70P drops below the blocking temperature, the magnetization direction of the initial ferromagnetic portion is fixed in the predetermined direction. As a result, the initial ferromagnetic portion becomes a ferromagnetic portion 73, and the initial magnetic field generators 70P become a magnetic field generators 70.

[0101] For example, in the case of a plurality of initial magnetic field generators 70P that will later become a plurality of magnetic field generators 70 that apply a bias magnetic field to a plurality of first MR elements 50A that constitute the resistor portions R11, R12 of the first detection circuit 10 and a plurality of second MR elements 50B that constitute the resistor portions R21, R22 of the second detection circuit 20, the magnetization directions of the initial ferromagnetic portions are fixed in the X direction by irradiating the initial magnetic field generators 70P with laser light while applying an external magnetic field in the X direction. As a result, the initial ferromagnetic portions become ferromagnetic portions 73, and the initial magnetic field generators 70P become magnetic field generators 70. Furthermore, in the multiple initial magnetic field generators 70P that will later become the multiple magnetic field generators 70 that apply a bias magnetic field to the multiple first MR elements 50A that constitute the resistor portions R13, R14 of the first detection circuit 10 and the multiple second MR elements 50B that constitute the resistor portions R23, R24 of the second detection circuit 20, the magnetization direction of each initial ferromagnetic portion of the multiple initial magnetic field generators 70P can be fixed in the -X direction by using an external magnetic field in the -X direction. In this way, the multiple magnetic field generators 70 are formed.

[0102] The intensity of the laser light used to fix the magnetization direction of the initial ferromagnetic portion may be smaller than the intensity of the laser light used to fix the magnetization direction of the initial magnetization fixed layer. Furthermore, the intensity of the laser light used to fix the magnetization direction of the initial ferromagnetic portion is preferably an intensity that suppresses a change in the magnetoresistance change rate, which is the ratio of magnetoresistance change to the resistance of the MR element 50.

[0103] Next, the effects of the magnetic sensor 1 according to this embodiment will be described. In this embodiment, the magnetic field generator 70 is formed from the first inclined surface 33a to the second inclined surface 33b. The angle θ that the convex surface 33c, including the first and second inclined surfaces 33a and 33b, forms with the upper surface 31a of the substrate 31 at any position on the convex surface 33c, varies depending on the distance from the upper surface 31a of the substrate 31 to the any position. In this embodiment, in particular, the angle θ increases as the distance from the upper surface 31a of the substrate 31 to the any position decreases.

[0104] Now, consider a comparative magnetic field generator that is formed so as to be positioned on only one of the first inclined surface 33a and the second inclined surface 33b of the convex surface 33c. The comparative magnetic field generator has a first side surface and a second side surface that are located at both ends of the magnetic field generator in a direction parallel to the Y direction. The first side surface and the second side surface are located at different positions in a direction parallel to the Z direction. The distance from the upper surface 31a of the substrate 31 to the first side surface is greater than the distance from the upper surface 31a of the substrate 31 to the second side surface.

[0105] The magnetic field generator of the comparative example is formed using a plurality of photoresist masks, similar to the magnetic field generator of the present embodiment. As described above, the plurality of photoresist masks are formed by patterning a photoresist layer applied to the MR element 50 and the insulating layer 35. The photoresist layer is formed on the convex surface 33c and the flat surface 33d. The thickness of the photoresist layer is greater on the flat surface 33d and decreases with increasing distance from the flat surface 33d (approaching the upper end of the convex surface 33c).

[0106] Each of the photoresist masks has a first end corresponding to the first side surface and a second end corresponding to the second side surface. Due to manufacturing variations, the positions of the first and second ends vary, resulting in variations in the thickness of the photoresist mask near the first end and the thickness of the photoresist mask near the second end. When etching the insulating layer 35 by ion milling, variations in the thickness of the photoresist mask result in variations in the length of the shadow of the photoresist mask extending from each of the first and second ends. As a result, the angle formed by the wall surface of the groove formed in the insulating layer 35 relative to the convex surface 33c varies, thereby changing the angle formed by the first side surface relative to the convex surface 33c and the angle formed by the second side surface relative to the convex surface 33c. In particular, in the magnetic field generator of the comparative example, the first side surface and the second side surface are located at different positions in a direction parallel to the Z direction. Therefore, when the positions of the first and second ends change, the difference in the thickness of the photoresist layer causes the amount of change in the thickness of the photoresist mask near the first end to differ from the amount of change in the thickness of the photoresist mask near the second end, which results in the amount of change in the angle between the first side surface and the convex surface 33c to differ from the amount of change in the angle between the second side surface and the convex surface 33c.

[0107] When the angle formed by the first side surface with respect to the convex surface 33c varies, the demagnetizing field near the first side surface varies. Similarly, when the angle formed by the second side surface with respect to the convex surface 33c varies, the demagnetizing field near the second side surface varies. These variations in the demagnetizing field affect the shape magnetic anisotropy of the magnetic field generator in a direction parallel to the X direction (the direction in which the magnetic field generator and the MR element 50 are aligned). As a result, variations occur when the magnetization direction of the initial ferromagnetic portion is fixed using laser light. In particular, with the magnetic field generator of the comparative example, the difference between the amount of change in the angle formed by the first side surface with respect to the convex surface 33c and the amount of change in the angle formed by the second side surface with respect to the convex surface 33c causes variations in the strength of the bias magnetic field applied to the MR element 50, resulting in variations in the characteristics of the magnetic sensor.

[0108] In contrast, in the present embodiment, the magnetic field generator 70 is formed from the first inclined surface 33a to the second inclined surface 33b. This allows the first end Ed1 and the second end Ed2 to be positioned at the same or approximately the same position in a direction parallel to the Z direction, and the side surface 70c and the side surface 70d to be positioned at the same or approximately the same position in a direction parallel to the Z direction. This allows the angle between the side surface 70c and the first inclined surface 33a and the angle between the side surface 70d and the second inclined surface 33b to be the same or approximately the same. As a result, this embodiment can suppress variations in the strength of the bias magnetic field applied to the first MR element 50A and the strength of the bias magnetic field applied to the second MR element 50B.

[0109] In particular, in this embodiment, the side surfaces 70c and 70d are disposed on the convex surface 33c at positions close to the upper end. The angle θ at the positions close to the upper end of the convex surface 33c is smaller than that at the positions close to the flat surface 33d of the convex surface 33c. Therefore, according to this embodiment, it is possible to suppress changes in the angle that the side surface 70c forms with respect to the first inclined surface 33a due to variations in the position of the side surface 70c, and it is also possible to suppress changes in the angle that the side surface 70d forms with respect to the second inclined surface 33b due to variations in the position of the side surface 70d. As a result, according to this embodiment, it is possible to suppress variations in the strength of the bias magnetic field applied to the first MR element 50A and the strength of the bias magnetic field applied to the second MR element 50B.

[0110] [Variations] Next, first to seventh modified examples of the magnetic sensor 1 according to the present embodiment will be described. First, the first modified example will be described with reference to FIG. 17. FIG. 17 is a plan view showing the first MR element 50A, the second MR element 50B, the magnetic field generator 70, the lower electrodes 41A and 41B, and the upper electrodes 42A and 42B in the first modified example. In the first modified example, instead of the insulating layer 35, insulating films are interposed between the first MR element 50A and the magnetic field generator 70 and between the second MR element 50B and the magnetic field generator 70. The insulating films are partially formed along the side surfaces of the first MR element 50A and the second MR element 50B. When viewed from the Z direction, a portion of the magnetic field generator 70 overlaps with a portion of each of the first MR element 50A and the second MR element 50B.

[0111] Next, a second modified example will be described with reference to FIG. 18. FIG. 18 is a side view showing a magnetic field generator 70 in the second modified example. In the second modified example, the magnetic field generator 70 further includes an antiferromagnetic portion 75. The antiferromagnetic portion 75 is disposed between the ferromagnetic portion 73 and the cap layer 74. The antiferromagnetic portion 75 is made of an antiferromagnetic material such as IrMn or PtMn. In the magnetic field generator 70 of the second modified example, the direction of magnetization of the ferromagnetic portion 73 is determined by exchange coupling between the antiferromagnetic portion 72 and the antiferromagnetic portion 75 and the ferromagnetic portion 73.

[0112] Next, a third modified example will be described with reference to FIG. 19. FIG. 19 is a side view showing a magnetic field generator 70 in the third modified example. In the third modified example, the ferromagnetic section 73 of the magnetic field generator 70 includes a ferromagnetic layer 731 and a ferromagnetic layer 732. The buffer layer 71, the antiferromagnetic section 72, the ferromagnetic layer 731, the ferromagnetic layer 732, and the cap layer 74 are stacked in this order. The ferromagnetic layers 731 and 732 are each made of a ferromagnetic material containing one or more elements of Co, Fe, and Ni. In the third modified example, the ferromagnetic layers 731 and 732 each have magnetization in the same direction.

[0113] In a third modification, the ferromagnetic layer 731 may be formed of a ferromagnetic material capable of increasing the exchange coupling energy with the antiferromagnetic part 72, and the ferromagnetic layer 732 may be formed of a ferromagnetic material having a higher saturation magnetic flux density than the ferromagnetic material constituting the ferromagnetic layer 731. In this case, the exchange coupling energy between the ferromagnetic part 73 consisting of the ferromagnetic layers 731 and 732 and the antiferromagnetic part 72 can be increased, while the strength of the bias magnetic field generated by the magnetic field generator 70 can be increased and the magnetic field generator 70 can be made smaller. An example of the ferromagnetic layer 731 is Co. 70 Fe 30 Examples of the ferromagnetic layer 732 include a Co 30 Fe 70 The Co layer is 70 Fe 30 represents an alloy consisting of 70 atomic % Co and 30 atomic % Fe, and Co 30 Fe 70 represents an alloy consisting of 30 atomic % Co and 70 atomic % Fe.

[0114] Next, a fourth modified example will be described with reference to FIG. 20 . FIG. 20 is a side view showing a magnetic field generator 70 according to the fourth modified example. In the fourth modified example, the ferromagnetic portion 73 of the magnetic field generator 70 includes a ferromagnetic layer 731 and a ferromagnetic layer 732. The magnetic field generator 70 further includes a nonmagnetic layer 76. The buffer layer 71, the antiferromagnetic portion 72, the ferromagnetic layer 731, the nonmagnetic layer 76, the ferromagnetic layer 732, and the cap layer 74 are stacked in this order. The ferromagnetic layers 731 and 732 are each made of a ferromagnetic material containing one or more elements selected from the group consisting of Co, Fe, and Ni. The ferromagnetic layers 731 and 732 may be made of the same ferromagnetic material or different ferromagnetic materials. The nonmagnetic layer 76 is made of a nonmagnetic metal material, such as Ru.

[0115] In a fourth modification, the ferromagnetic layers 731 and 732 may be ferromagnetically exchange-coupled via the nonmagnetic layer 76 so that their magnetization directions are the same. In this case, the ferromagnetic layers 731 and 732 have magnetizations in the same direction. The thickness of the nonmagnetic layer 76 is set so that the exchange coupling between the ferromagnetic layers 731 and 732 is not lost. By providing the nonmagnetic layer 76, it is possible to adjust the coercive force of the ferromagnetic part 73 and the surface roughness of the base of the ferromagnetic layer 732.

[0116] Alternatively, the ferromagnetic layer 731 and the ferromagnetic layer 732 may be antiferromagnetically exchange-coupled via the nonmagnetic layer 76 by RKKY interaction. In this case, the magnetization direction of the ferromagnetic layer 731 and the magnetization direction of the ferromagnetic layer 732 are opposite to each other. The magnetization direction of the ferromagnetic portion 73 is the same as the magnetization direction of the ferromagnetic layer 731. When the ferromagnetic layer 731 and the ferromagnetic layer 732 are antiferromagnetically exchange-coupled, the net moment of the ferromagnetic portion 73 is reduced. Therefore, the Zeeman energy, which is the energy generated when an external magnetic field acts on the magnetic moment, is reduced in the ferromagnetic portion 73. As a result, even when an external magnetic field is applied, the magnetization direction of the ferromagnetic portion 73 is less likely to tilt than when the Zeeman energy is large.

[0117] The thickness of the nonmagnetic layer 76 is set so that the magnetization directions of the ferromagnetic layers 731 and 732 due to the RKKY interaction are in the expected directions, and the strength of the exchange coupling due to the RKKY interaction is the expected strength.

[0118] Next, a fifth modified example will be described with reference to Fig. 21. Fig. 21 is a side view showing a magnetic field generator 70 in the fifth modified example. In the fifth modified example, the buffer layer 71, antiferromagnetic portion 72, ferromagnetic portion 73, and cap layer 74 of the magnetic field generator 70 are stacked in this order: buffer layer 71, ferromagnetic portion 73, antiferromagnetic portion 72, and cap layer 74.

[0119] Next, a sixth modified example will be described with reference to Fig. 22. Fig. 22 is a side view showing a magnetic field generator 70 in the sixth modified example. In the sixth modified example, the magnetic field generator 70 includes a magnet 77 made of a hard magnetic material instead of the antiferromagnetic portion 72 and the ferromagnetic portion 73. The magnetic field generator 70 may or may not include a buffer layer 71 and a cap layer 74.

[0120] Next, a seventh modified example will be described with reference to FIG. 23. FIG. 23 is a cross-sectional view showing a portion of a magnetic sensor according to the seventh modified example. In the seventh modified example, each of the plurality of first inclined surfaces 33a and the plurality of second inclined surfaces 33b is formed as a flat surface or a substantially flat surface. Each of the plurality of convex surfaces 33c further includes an upper surface 33e located between the first inclined surface 33a and the second inclined surface 33b. The upper surface 33e may be a surface substantially parallel to the upper surface 31a of the substrate 31.

[0121] The shape of the convex surface 33c in a cross section parallel to the YZ plane is a trapezoid. The overall shape of each of the multiple convex surfaces 33c is a semi-cylindrical surface obtained by moving the trapezoid shape along a direction parallel to the X direction.

[0122] In the seventh modification, the side surfaces 70c and 70d of the magnetic field generator 70 are located on the top surface 33e. The top surface 33e is flatter than the first and second inclined surfaces 33a and 33b. Therefore, in the seventh modification, it is possible to suppress variations in the angle that each of the side surfaces 70c and 70d forms with respect to the top surface 33e, i.e., the angle that each of the side surfaces 70c and 70d forms with respect to the top surface 31a of the substrate 31. This makes it possible to suppress variations in the strength of the bias magnetic field applied to the first MR element 50A and the strength of the bias magnetic field applied to the second MR element 50B.

[0123] [Second embodiment] Next, a second embodiment of the present invention will be described with reference to Fig. 24 and Fig. 25. Fig. 24 is a cross-sectional view showing a part of a magnetic sensor in this embodiment. Fig. 25 shows a part of the cross section taken along line 25-25 in Fig. 24.

[0124] The following describes differences in the configuration of the magnetic sensor 1 according to this embodiment from the first embodiment. The magnetic sensor 1 according to this embodiment includes a plurality of magnetic field generators 170 instead of the plurality of magnetic field generators 70 of the first embodiment. Each of the plurality of magnetic field generators 170 is disposed on one of the convex surfaces 33c. That is, each of the plurality of magnetic field generators 170 is disposed from the first inclined surface 33a to the second inclined surface 33b of one of the convex surfaces 33c. Each of the plurality of magnetic field generators 70 includes a portion located on the first inclined surface 33a of one of the convex surfaces 33c and a portion located on the second inclined surface 33b of one of the convex surfaces 33c. Each of the plurality of magnetic field generators 170 further includes a portion located on the flat surface 33d adjacent to the first inclined surface 33a and a portion located on the flat surface 33d adjacent to the second inclined surface 33b.

[0125] Each of the plurality of magnetic field generators 170 has a first end and a second end located at opposite ends in a direction parallel to the Y direction. At least one of the first and second ends is located on the flat surface 33d. In this embodiment in particular, both the first and second ends are located on the flat surface 33d.

[0126] Other configurations, actions, and effects of this embodiment are the same as those of the first embodiment.

[0127] [Third embodiment] Next, a third embodiment of the present invention will be described with reference to Fig. 26. Fig. 26 is a cross-sectional view showing a part of a magnetic sensor in this embodiment.

[0128] The following describes the differences in the configuration of the magnetic sensor 1 according to this embodiment from the first embodiment. The magnetic sensor 1 according to this embodiment includes a plurality of magnetic field generators 270 instead of the plurality of magnetic field generators 70 in the first embodiment. Each of the plurality of magnetic field generators 270 is arranged so as to overlap with three MR elements 50 when viewed from the X direction.

[0129] In the example shown in Figure 26, the multiple magnetic field generators 270 include multiple first magnetic field generators that each apply a bias magnetic field to two first MR elements 50A and one second MR element 50B, and multiple second magnetic field generators that each apply a bias magnetic field to one first MR element 50A and two second MR elements 50B.

[0130] Each of the multiple first magnetic field generators is disposed on two adjacent convex surfaces 33c in a direction parallel to the Y direction. Each of the multiple first magnetic field generators is disposed from the first inclined surface 33a of one of the two convex surfaces 33c to the first inclined surface 33a of the other of the two convex surfaces 33c. Each of the multiple first magnetic field generators includes a portion located on the first inclined surface 33a of one of the two convex surfaces 33c, a portion located on the second inclined surface 33b of the other of the two convex surfaces 33c, a portion located on the first inclined surface 33a of the other of the two convex surfaces 33c, and a portion located on the flat surface 33d interposed between the two convex surfaces 33c.

[0131] Each of the plurality of first magnetic field generators has a first end and a second end located at opposite ends in a direction parallel to the Y direction. At least one of the first and second ends is located on the flat surface 33d. In this embodiment, particularly, one of the first and second ends is located on the flat surface 33d, and the other of the first and second ends is located on the first inclined surface 33a.

[0132] Each of the multiple second magnetic field generators is disposed on two adjacent convex surfaces 33c in a direction parallel to the Y direction. Each of the multiple second magnetic field generators is disposed from the second inclined surface 33b of one of the two convex surfaces 33c to the second inclined surface 33b of the other of the two convex surfaces 33c. Each of the multiple second magnetic field generators includes a portion located on the second inclined surface 33b of one of the two convex surfaces 33c, a portion located on the first inclined surface 33a of one of the two convex surfaces 33c, a portion located on the second inclined surface 33b of the other of the two convex surfaces 33c, and a portion located on the flat surface 33d interposed between the two convex surfaces 33c.

[0133] Each of the plurality of second magnetic field generators has a first end and a second end located at opposite ends in a direction parallel to the Y direction. At least one of the first and second ends is located on the flat surface 33d. In this embodiment, particularly, one of the first and second ends is located on the flat surface 33d, and the other of the first and second ends is located on the second inclined surface 33b.

[0134] Other configurations, actions, and effects of this embodiment are the same as those of the first embodiment.

[0135] [Fourth embodiment] Next, a fourth embodiment of the present invention will be described with reference to Fig. 27. Fig. 27 is a cross-sectional view showing a part of a magnetic sensor in this embodiment.

[0136] The following describes the differences in the configuration of the magnetic sensor 1 according to this embodiment from the first embodiment. The magnetic sensor 1 according to this embodiment includes a plurality of magnetic field generators 370 instead of the plurality of magnetic field generators 70 in the first embodiment. Each of the plurality of magnetic field generators 370 is arranged so as to overlap with four MR elements 50 when viewed from the X direction.

[0137] Each of the multiple magnetic field generators 370 is disposed on two adjacent convex surfaces 33c in a direction parallel to the Y direction. Each of the multiple magnetic field generators 370 is disposed from the second inclined surface 33b of one of the two convex surfaces 33c to the first inclined surface 33a of the other of the two convex surfaces 33c. Each of the multiple magnetic field generators 370 includes a portion located on the second inclined surface 33b of one of the two convex surfaces 33c, a portion located on the first inclined surface 33a of one of the two convex surfaces 33c, a portion located on the second inclined surface 33b of the other of the two convex surfaces 33c, a portion located on the first inclined surface 33a of the other of the two convex surfaces 33c, and a portion located on the flat surface 33d interposed between the two convex surfaces 33c.

[0138] Each of the plurality of magnetic field generators 370 has a first end and a second end located at opposite ends in a direction parallel to the Y direction. The first and second ends are located on the flat surface 33d.

[0139] Other configurations, actions, and effects of this embodiment are the same as those of the first embodiment.

[0140] The present invention is not limited to the above-described embodiments and various modifications are possible. For example, the magnetic sensor 1 of the present invention may further include a third detection circuit configured to detect a component of the target magnetic field parallel to the X direction and generate at least one third detection signal corresponding to this component. In this case, the processor 2 may be configured to generate a detection value corresponding to the component of the target magnetic field parallel to the X direction based on the at least one third detection signal. The third detection circuit may be integrated with the first and second detection circuits 10 and 20, or may be included on a chip separate from the first and second detection circuits 10 and 20.

[0141] As described above, the magnetic sensor of the present invention comprises a substrate having a reference plane, a support member having an upper surface including a first inclined surface and a second inclined surface that are inclined relative to the reference plane and face in different directions from each other, a first magnetoresistance effect element arranged on the first inclined surface, a second magnetoresistance effect element arranged on the second inclined surface, and a first magnetic field generator and a second magnetic field generator arranged from the first inclined surface to the second inclined surface and sandwiching the first magnetoresistance effect element and the second magnetoresistance effect element, and configured to apply a bias magnetic field to the first magnetoresistance effect element and the second magnetoresistance effect element, respectively.

[0142] In the magnetic sensor of the present invention, each of the first magnetic field generator and the second magnetic field generator may have a first end and a second end located at opposite ends in the direction in which the first magnetoresistance effect element and the second magnetoresistance effect element are aligned. When a cross section intersecting the first magnetoresistance effect element and the second magnetoresistance effect element is defined as a first cross section, a cross section parallel to the first cross section and intersecting the first magnetic field generator or the second magnetic field generator is defined as a second cross section, a position on the top surface of the support member closest to the first end in the second cross section is defined as a first position, a position on the top surface of the support member closest to the second end in the second cross section is defined as a second position, and any position on the top surface of the support member that overlaps with the first magnetoresistance effect element and the second magnetoresistance effect element when viewed from a direction perpendicular to the reference plane in the first cross section is defined as a third position, the first angle that the top surface of the support member makes with respect to the reference plane at the first position and the second angle that the top surface of the support member makes with respect to the reference plane at the second position may be smaller than the angle that the top surface of the support member makes with respect to the reference plane at the third position.

[0143] The magnetic sensor of the present invention may further include a first electrode and a second electrode, each made of a conductive material, and an insulating layer. The first electrode may be in contact with the first magnetoresistive element, and the second electrode may be in contact with the second magnetoresistive element. The insulating layer may be interposed between the first and second magnetic field generators and the first and second electrodes, insulating the first and second magnetic field generators from the first and second electrodes.

[0144] In the magnetic sensor of the present invention, the insulating layer may cover a part of each of the first magnetoresistive element and the second magnetoresistive element.

[0145] In the magnetic sensor of the present invention, the first magnetoresistance effect element and the second magnetoresistance effect element do not have to be in contact with the first magnetic field generator and the second magnetic field generator.

[0146] In the magnetic sensor of the present invention, the upper surface of the support member may further include a first convex surface including the first inclined surface, and a second convex surface including the second inclined surface.

[0147] In the magnetic sensor of the present invention, the upper surface of the support member may further include a flat surface located between the first inclined surface and the second inclined surface and substantially parallel to the reference plane.

[0148] In the magnetic sensor of the present invention, the upper surface of the support member may further include a convex surface including a first inclined surface and a second inclined surface.

[0149] In the magnetic sensor of the present invention, the upper surface of the support member may further include a flat surface that is substantially parallel to the reference plane, and the flat surface may be adjacent to at least one of the first inclined surface and the second inclined surface.

[0150] In the magnetic sensor of the present invention, each of the first and second magnetic field generators may have a first end and a second end located at opposite ends in a direction in which the first and second magnetoresistive elements are aligned, and at least one of the first end and the second end may be located on a flat surface. [Explanation of symbols]

[0151] 1...magnetic sensor, 2...processor, 10...first detection circuit, 20...second detection circuit, 31...substrate, 32-38...insulating layer, 33a...first inclined surface, 33b...second inclined surface, 33c...convex surface, 33d...flat surface, 41, 41A, 41B...lower electrode, 42, 42A, 42B...upper electrode, 50...MR element, 50A...first MR element, 50B...second MR element, 50a...lower surface, 50b...upper surface, 50d-50f...side surface, 51... Antiferromagnetic layer, 52...magnetization fixed layer, 53...gap layer, 54...free layer, 70...magnetic field generator, 70a...bottom surface, 70b...top surface, 70c to 70f...side surfaces, 71...buffer layer, 72...antiferromagnetic portion, 73...ferromagnetic portion, 74...cap layer, 100...magnetic sensor device, E11, E21...first output terminal, E12, E22...second output terminal, G1, G2...ground terminal, R11 to R14, R21 to R24...resistance portions, V1, V2...power supply terminal.

Claims

1. a substrate having a reference plane; a support member having an upper surface including a first inclined surface and a second inclined surface inclined relative to the reference plane and facing in different directions; a first magnetoresistive element disposed on the first inclined surface; a second magnetoresistance effect element disposed on the second inclined surface; a first magnetic field generator and a second magnetic field generator, which are arranged across the first inclined surface and the second inclined surface, and which are arranged to sandwich the first magnetoresistive element and the second magnetoresistive element, and which are configured to apply a bias magnetic field to the first magnetoresistive element and the second magnetoresistive element, respectively; A magnetic sensor comprising:

2. each of the first magnetic field generator and the second magnetic field generator has a first end and a second end located at opposite ends in a direction in which the first magnetoresistive element and the second magnetoresistive element are aligned, 2. The magnetic sensor according to claim 1, wherein a cross section intersecting the first magnetoresistive element and the second magnetoresistive element is defined as a first cross section, a cross section parallel to the first cross section and intersecting the first magnetic field generator or the second magnetic field generator is defined as a second cross section, a position on the top surface of the support member closest to the first end in the second cross section is defined as a first position, a position on the top surface of the support member closest to the second end in the second cross section is defined as a second position, and an arbitrary position on the top surface of the support member that overlaps with the first magnetoresistive element and the second magnetoresistive element when viewed from one direction perpendicular to the reference plane in the first cross section is defined as a third position, wherein a first angle formed by the top surface of the support member with respect to the reference plane at the first position and a second angle formed by the top surface of the support member with respect to the reference plane at the second position are smaller than an angle formed by the top surface of the support member with respect to the reference plane at the third position.

3. Furthermore, a first electrode and a second electrode each made of a conductive material; an insulating layer; the first electrode is in contact with the first magnetoresistive element; the second electrode is in contact with the second magnetoresistive element; 2. The magnetic sensor according to claim 1, wherein the insulating layer is interposed between the first and second magnetic field generators and the first and second electrodes, and insulates the first and second magnetic field generators from the first and second electrodes.

4. 4. The magnetic sensor according to claim 3, wherein the insulating layer covers a portion of each of the first magnetoresistive element and the second magnetoresistive element.

5. 2. The magnetic sensor according to claim 1, wherein the first magnetoresistive element and the second magnetoresistive element are not in contact with the first magnetic field generator and the second magnetic field generator.

6. 6. The magnetic sensor according to claim 1, wherein the upper surface of the support member further includes a first convex surface including the first inclined surface and a second convex surface including the second inclined surface.

7. 7. The magnetic sensor according to claim 6, wherein the upper surface of the support member further includes a flat surface located between the first inclined surface and the second inclined surface and substantially parallel to the reference plane.

8. 6. The magnetic sensor according to claim 1, wherein the upper surface of the support member further includes a convex surface including the first inclined surface and the second inclined surface.

9. the upper surface of the support member further includes a flat surface substantially parallel to the reference plane; 9. The magnetic sensor according to claim 8, wherein the flat surface is adjacent to at least one of the first inclined surface and the second inclined surface.

10. each of the first magnetic field generator and the second magnetic field generator has a first end and a second end located at opposite ends in a direction in which the first magnetoresistive element and the second magnetoresistive element are aligned, 10. The magnetic sensor of claim 9, wherein at least one of the first end and the second end is above the flat surface.

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