Sensor

Abstract

To provide a sensor capable of improving characteristics.SOLUTION: According to an embodiment, a sensor includes first and second detectors, first to third resistance terminals, and first and second conductive terminals. The first and second detection parts include first and second detection elements. The first and second detection elements include first and second resistance members and first and second conductive members, respectively. The first resistance member includes a first resistance portion and a first resistance other-portion. The first conductive member includes a first conductive portion and a first conductive other-portion. The second resistance member includes a second resistance portion and a second resistance other-portion. The second conductive member includes a second conductive portion and a second conductive other-portion. The first resistance terminal is connected to the first resistance portion. The second resistance terminal is connected to the first resistance other portion and the second resistance portion. The third resistance terminal is connected with the second resistance other portion. The first conductive terminal is connected to the first conductive portion. The second conductive terminal is connected with the first conductive other-portion.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] FIELD OF THE INVENTION An embodiment of the present invention relates to a sensor. [Background technology]

[0002] For example, there are sensors using MEMS (Micro Electro Mechanical Systems) elements, etc. Improvement of the characteristics of sensors is desired. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2020-41893 Summary of the Invention [Problem to be solved by the invention]

[0004] The embodiments provide sensors that allow for improved performance. [Means for solving the problem]

[0005] According to an embodiment, the sensor includes a base, a first detection unit, a second detection unit, a first resistive terminal, a second resistive terminal, a third resistive terminal, a first conductive terminal, and a second conductive terminal. The base includes a first base region and a second base region. The first detection unit is provided in the first base region. The first detection unit includes a first detection element. The first detection element includes a first resistive member and a first conductive member. The first resistive member includes a first resistive portion and a first other resistive portion. The first conductive member includes a first other conductive portion and a first other conductive portion. The second detection unit is provided in the second base region. The second detection unit includes a second detection element. The second detection element includes a second resistive member and a second conductive member. The second resistive member includes a second resistive portion and a second other resistive portion. The second conductive member includes a second other conductive portion and a second other conductive portion. The first resistor terminal is electrically connected to the first resistor portion. The second resistor terminal is electrically connected to the first resistor other portion and the second resistor portion. The third resistor terminal is electrically connected to the second resistor other portion. The first conductive terminal is electrically connected to the first conductive portion. The second conductive terminal is electrically connected to the first conductive other portion. [Brief explanation of the drawings]

[0006] [Figure 1] FIG. 1 is a schematic cross-sectional view illustrating the sensor according to the first embodiment. [Figure 2] 2A and 2B are schematic cross-sectional views illustrating the sensor according to the first embodiment. [Figure 3] FIG. 3 is a schematic plan view illustrating the sensor according to the first embodiment. [Figure 4] 4A and 4B are schematic plan views illustrating the sensor according to the first embodiment. [Figure 5] FIG. 5 is a schematic plan view illustrating the sensor according to the first embodiment. [Figure 6] FIG. 6 is a schematic plan view illustrating the sensor according to the second embodiment. [Figure 7] FIG. 7 is a schematic plan view illustrating the sensor according to the third embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0007] Hereinafter, embodiments of the present invention will be described with reference to the drawings. The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between parts, etc. are not necessarily the same as those in reality. Even when the same part is shown, the dimensions and ratios may be different depending on the drawing. In this specification and in each drawing, elements similar to those previously described with reference to the previous drawings are designated by the same reference numerals, and detailed descriptions thereof will be omitted where appropriate.

[0008] (First embodiment) 1, 2A, and 2B are schematic cross-sectional views illustrating the sensor according to the first embodiment. FIG. 3 is a schematic plan view illustrating the sensor according to the first embodiment. Fig. 1 is a cross-sectional view taken along line A1-A2 in Fig. 3. Fig. 2(a) is a cross-sectional view taken along line B1-B2 in Fig. 3. Fig. 2(b) is a cross-sectional view taken along line C1-C2 in Fig. 3.

[0009] As shown in Figures 1, 2(a), 2(b) and 3, the sensor 110 according to the embodiment includes a base 41, a first detection unit 10A, a second detection unit 10B, a first resistive terminal 51, a second resistive terminal 52, a third resistive terminal 53, a first conductive terminal 61 and a second conductive terminal 62.

[0010] The base 41 includes a first base region 41a and a second base region 41b. In this example, the base 41 includes a substrate 41s and an insulating film 41i. The substrate 41s may be, for example, a semiconductor substrate (e.g., a silicon substrate). The substrate 41s may include, for example, a semiconductor circuit. The substrate 41s may include a connecting member such as a via electrode.

[0011] The first detection unit 10A is provided in the first base region 41a. The direction from the first base region 41a to the first detection unit 10A is defined as the Z-axis direction. One direction perpendicular to the Z-axis direction is defined as the X-axis direction. The direction perpendicular to the Z-axis direction and the X-axis direction is defined as the Y-axis direction.

[0012] The first detection unit 10A includes a first detection element 11E. The first detection element 11E includes a first resistive member 11 and a first conductive member 21. As shown in FIGS. 1 and 3, the first resistive member 11 includes a first resistive portion 11a and a first other resistive portion 11b. For example, the first resistive portion 11a may be one end of the first resistive member 11. The first other resistive portion 11b may be another end of the first resistive member 11. As shown in FIGS. 2(a) and 3, the first conductive member 21 includes a first conductive portion 21a and a first other conductive portion 21b. For example, the first conductive portion 21a may be one end of the first conductive member 21. The first other conductive portion 21b may be another end of the first conductive member 21.

[0013] 1 and 3, in this example, the first detection unit 10A further includes a first connection portion 31C and a first support portion 31S. The first support portion 31S is fixed to the base 41. A portion of the first connection portion 31C is supported by the first support portion 31S. Another portion of the first connection portion 31C supports the first detection element 11E at a distance from the first base region 41a. A first gap g1 is provided between the first base region 41a and the first detection element 11E.

[0014] In this example, the first detection unit 10A further includes a first other connection portion 31aC and a first other support portion 31aS. The first other support portion 31aS is fixed to the base 41. A portion of the first other connection portion 31aC is supported by the first other support portion 31aS. Another portion of the first other connection portion 31aC supports the first detection element 11E away from the first base region 41a. In this example, at least a portion of the first detection element 11E is located between the first connection portion 31C and the first other connection portion 31aC.

[0015] The second detection unit 10B is provided in the second base region 41b. The direction from the second base region 41b to the second detection unit 10B is along the Z-axis direction.

[0016] The second detection unit 10B includes a second detection element 12E. The second detection element 12E includes a second resistive member 12 and a second conductive member 22. As shown in FIGS. 1 and 3, the second resistive member 12 includes a second resistive portion 12a and a second other resistive portion 12b. For example, the second resistive portion 12a may be one end of the second resistive member 12. The second other resistive portion 12b may be the other end of the second resistive member 12. As shown in FIGS. 2(b) and 3, the second conductive member 22 includes a second conductive portion 22a and a second other conductive portion 22b. For example, the second conductive portion 22a may be one end of the second conductive member 22. The second other conductive portion 22b may be the other end of the second conductive member 22.

[0017] 1 and 3, in this example, the second detection unit 10B further includes a second connection portion 32C and a second support portion 32S. The second support portion 32S is fixed to the base 41. A portion of the second connection portion 32C is supported by the second support portion 32S. Another portion of the second connection portion 32C supports the second detection element 12E at a distance from the second base region 41b. A second gap g2 is provided between the second base region 41b and the second detection element 12E.

[0018] In this example, the second detection unit 10B further includes a second other connection portion 32aC and a second other support portion 32aS. The second other support portion 32aS is fixed to the base 41. A portion of the second other connection portion 32aC is supported by the second other support portion 32aS. Another portion of the second other connection portion 32aC supports the second detection element 12E away from the second base region 41b. In this example, at least a portion of the second detection element 12E is located between the second connection portion 32C and the second other connection portion 32aC.

[0019] By supporting the first detection element 11E and the second detection element 12E at a distance from the base 41, heat from these detection elements is prevented from being conducted via the base 41. This facilitates stable detection of the detection target with high sensitivity.

[0020] The first resistor terminal 51 is electrically connected to the first resistor portion 11a. In this example, the second resistor terminal 52 is electrically connected to the first resistor other portion 11b and the second resistor portion 12a. The third resistor terminal 53 is electrically connected to the second resistor other portion 12b. As will be described later, other resistor terminals may be provided. In this case, the second resistor terminal 52 may be electrically connected to the first resistor other portion 11b, and the other resistor terminal may be electrically connected to the second resistor portion 12a.

[0021] 3, a connecting conductive member 25 is provided on a base 41. The connecting conductive member 25 electrically connects the first resistor other portion 11b and the second resistor portion 12a. In this example, the second resistor terminal 52 is electrically connected to the first resistor other portion 11b and the second resistor portion 12a via the connecting conductive member 25.

[0022] The first conductive terminal 61 is electrically connected to the first conductive portion 21a, and the second conductive terminal 62 is electrically connected to the first other conductive portion 21b.

[0023] 3, a processing unit 70 may be provided in the sensor 110. The processing unit 70 may be included in the sensor 110. The processing unit 70 may be provided separately from the sensor 110. The processing unit 70 is electrically connected to the first resistive terminal 51, the second resistive terminal 52, the third resistive terminal 53, the first conductive terminal 61, and the second conductive terminal 62.

[0024] The processing unit 70 is capable of performing a first operation. In the first operation, the processing unit 70 supplies a first current i1 between the first conductive terminal 61 and the second conductive terminal 62 to increase the temperature of the first detection element 11E. The first current i1 flows through the first conductive member 21. Joule heat causes the temperature of the first conductive member 21 to increase relative to the ambient temperature, thereby increasing the temperature of the first detection element 11E. The first current i1 may be either AC or DC.

[0025] In the first operation, the processing unit 70 can output a signal 70s corresponding to a first ratio of a first electrical resistance between the first resistance terminal 51 and the second resistance terminal 52 to a second electrical resistance between the second resistance terminal 52 and the third resistance terminal 53. "Corresponding to the first ratio" includes "corresponding to the reciprocal of the first ratio."

[0026] For example, the electrical resistance of the first resistive element 11 changes depending on the temperature of the first resistive element 11. The temperature of the first resistive element 11 is substantially the same as the temperature of the first detection element 11E. For example, the electrical resistance of the second resistive element 12 changes depending on the temperature of the second resistive element 12. The temperature of the second resistive element 12 is substantially the same as the temperature of the second detection element 12E. As described above, in the first operation, for example, the temperature of the first detection element 11E increases, and the temperature of the first resistive element 11 also increases. Meanwhile, in the first operation, for example, the processing unit 70 does not supply current to the second conductive element 22. In the first operation, no current flows through the second conductive element 22, and the temperatures of the second detection element 12E and the second resistive element 12 do not substantially change. The first resistive element 11 and the second resistive element 12 form, for example, at least a part of a half-bridge circuit. A first ratio between the first electrical resistance and the second electrical resistance depends on the temperature difference between the two resistive elements.

[0027] Here, the first ratio when the first element to be inspected is present in the atmosphere surrounding the first detection element 11E changes from the first ratio when the first element is not present in the atmosphere. This is based on the fact that the temperature conduction characteristics of the first detection element 11E change depending on the presence (and concentration) of the first element. For example, the first element includes at least one selected from the group consisting of hydrogen, helium, carbon dioxide, methane, and sulfur hexafluoride (SF6). When the atmosphere contains hydrogen as the first element, the temperature of the first detection element 11E is lower than when the atmosphere is substantially free of hydrogen. The first ratio changes depending on the concentration of the first element contained in the atmosphere surrounding the first detection element and the second detection element.

[0028] By utilizing such characteristics, the sensor 110 can detect the first element. The first ratio changes depending on the concentration of the first element contained in the atmosphere around the first detection element 11E and the second detection element 12E. For example, when the temperature of the first detection element 11E increases, the first electrical resistance changes depending on the concentration of the first element contained in the atmosphere around the first detection element 11E. For example, the processing unit 70 can detect the presence or concentration of the first element to be detected by detecting the first ratio.

[0029] In the embodiment, multiple detection units are provided on one base 41. The second detection unit 10B has substantially the same structure as the first detection unit 10A. This makes the heat capacity of the second detection unit 10B the same as the heat capacity of the first detection unit 10A. In the embodiment, by detecting the ratio of the electrical resistances of these two detection units, detection with higher accuracy and higher sensitivity is possible.

[0030] For example, even if the ambient temperature of the sensor 110 changes, the influence of the change in ambient temperature is suppressed by using two detection units. In the embodiment, a change in the electrical resistance of the first detection element 11E caused by the presence or absence or concentration of the first element is detected while suppressing other influences. A sensor capable of improving characteristics can be provided.

[0031] In this embodiment, the second detection unit 10B has substantially the same structure as the first detection unit 10A. The length, width, thickness, and material of the second resistance member 12 are substantially the same as the length, width, thickness, and material of the first resistance member 11. The length, width, thickness, and material of the second conductive member 22 are substantially the same as the length, width, thickness, and material of the first conductive member 21.

[0032] In the embodiment, no current may be supplied to the second conductive member 22. For example, at least one of the second conductive portion 22a and the second other conductive portion 22b may be at a floating potential. For example, the second conductive member 22 is a dummy conductive member. The potential of the second conductive member 22 may be a fixed potential (for example, ground potential).

[0033] As shown in FIG. 1 , the first detection unit 10A (and the first detection element 11E) may include a first insulating portion 18A. The second detection unit 10B (and the second detection element 12E) may include a second insulating portion 18B. At least a portion of the first insulating portion 18A is provided around the first resistance member 11 and the first conductive member 21. A portion of the first insulating portion 18A is provided between the first resistance member 11 and the first conductive member 21. At least a portion of the second insulating portion 18B is provided around the second resistance member 12 and the second conductive member 22. A portion of the second insulating portion 18B is provided between the second resistance member 12 and the second conductive member 22. The second insulating portion 18B has substantially the same structure as the first insulating portion 18A. The length, width, thickness, and material of the second insulating portion 18B are substantially the same as the length, width, thickness, and material of the first insulating portion 18A.

[0034] For example, the thermal conductivity of hydrogen gas is 174 mW / (m·K). The thermal conductivity of carbon dioxide is 14.2 mW / (m·K). The thermal conductivity of nitrogen is 24.3 mW / (m·K). The thermal conductivity of methane is 30 mW / (m·K). For example, when hydrogen is contained in an air atmosphere, the change in temperature of the first resistive element 11 is greater than the change in temperature of the second resistive element 12 due to the change in the effective thermal conductivity of the atmosphere depending on the presence or concentration of hydrogen. When the first element contains hydrogen, higher sensitivity detection can be achieved. The sensor 110 is, for example, a thermal conduction type hydrogen sensor.

[0035] As shown in FIG. 1, the first detection unit 10A may further include a first conductive layer 51L. The first conductive layer 51L is electrically connected to the first resistance portion 11a of the first resistance member 11. At least a portion of the first conductive layer 51L may be provided on the first support unit 31S. In this example, the first conductive layer 51L is electrically connected to a wiring layer 51M provided on the base 41. The wiring layer 51M is electrically connected to the first resistance terminal 51 (see FIG. 3).

[0036] As shown in FIG. 1, the second detection unit 10B may further include a second conductive layer 52L. The second conductive layer 52L is electrically connected to the second resistive portion 12a of the second resistive member 12. At least a portion of the second conductive layer 52L may be provided on the second support portion 32S. In this example, the second conductive layer 52L is electrically connected to a wiring layer 52M provided on the base 41. The wiring layer 52M is electrically connected to the second resistive terminal 52 (see FIG. 3).

[0037] The current flowing between the first resistor terminal 51 and the first resistor portion 11a flows through the first conductive layer 51L. The current flowing between the second resistor terminal 52 and the second resistor portion 12a flows through the second conductive layer 52L.

[0038] The first detection unit 10A may further include a first other conductive layer 51aL. The first other conductive layer 51aL is electrically connected to the first resistor other portion 11b of the first resistor member 11. At least a portion of the first other conductive layer 51aL may be provided on the first other support portion 31aS. In this example, the first other conductive layer 51aL is electrically connected to a wiring layer 51aM provided on the base 41. The wiring layer 51aM is electrically connected to the second resistor terminal 52 (see FIG. 3).

[0039] The second detection unit 10B may further include a second other conductive layer 52aL. The second other conductive layer 52aL is electrically connected to the second resistor other portion 12b of the second resistor member 12. At least a portion of the second other conductive layer 52aL may be provided on the second other support portion 32aS. In this example, the second other conductive layer 52aL is electrically connected to a wiring layer 52aM provided on the base 41. The wiring layer 52aM is electrically connected to the third resistor terminal 53 (see FIG. 3).

[0040] 2(a) and 3, in this example, the first detection unit 10A includes a third connection portion 33C and a third support portion 33S. The third support portion 33S is fixed to the base 41. A portion of the third connection portion 33C is supported by the third support portion 33S. Another portion of the third connection portion 33C supports the first detection element 11E at a distance from the first base region 41a.

[0041] In this example, the first detection unit 10A includes a third other connection portion 33aC and a third other support portion 33aS. The third other support portion 33aS is fixed to the base 41. A portion of the third other connection portion 33aC is supported by the third other support portion 33aS. Another portion of the third other connection portion 33aC supports the first detection element 11E away from the first base region 41a.

[0042] As shown in FIG. 2(a), the first detection unit 10A may further include a third conductive layer 53L. At least a portion of the third conductive layer 53L is provided on the third support portion 33S. In this example, the third conductive layer 53L is electrically connected to a wiring layer 53M provided on the base 41. The wiring layer 53M is electrically connected to a first conductive terminal 61 (see FIG. 3). A first current i1 flowing between the first conductive terminal 61 and the first conductive portion 21a flows through the third conductive layer 53L.

[0043] As shown in FIG. 2(a), the first detection unit 10A may further include a third other conductive layer 53aL. At least a portion of the third other conductive layer 53aL is provided on the third other support portion 33aS. In this example, the third other conductive layer 53aL is electrically connected to a wiring layer 53aM provided on the base 41. The wiring layer 53aM is electrically connected to the second conductive terminal 62 (see FIG. 3). A first current i1 flowing between the second conductive terminal 62 and the first conductive other portion 21b flows through the third other conductive layer 53aL.

[0044] 2(b) and 3, in this example, the second detection unit 10B includes a fourth connection portion 34C and a fourth support portion 34S. The fourth support portion 34S is fixed to the base 41. A portion of the fourth connection portion 34C is supported by the fourth support portion 34S. Another portion of the fourth connection portion 34C supports the second detection element 12E away from the second base region 41b.

[0045] In this example, the second detection unit 10B includes a fourth other connection portion 34aC and a fourth other support portion 34aS. The fourth other support portion 34aS is fixed to the base 41. A portion of the fourth other connection portion 34aC is supported by the fourth other support portion 34aS. Another portion of the fourth other connection portion 34aC supports the second detection element 12E away from the second base region 41b.

[0046] 2(b), the second detection unit 10B may further include a fourth conductive layer 54L. At least a portion of the fourth conductive layer 54L is provided on the fourth support portion 34S. In this example, the fourth conductive layer 54L is electrically connected to a wiring layer 54M provided on the base 41. The fourth conductive layer 54L is electrically connected to the second conductive portion 22a.

[0047] 2(b), the second detection unit 10B may further include a fourth other conductive layer 54aL. At least a portion of the fourth other conductive layer 54aL is provided on the fourth other support portion 34aS. In this example, the fourth other conductive layer 54aL is electrically connected to the wiring layer 54aM provided on the base 41. The fourth other conductive layer 54aL is electrically connected to the second other conductive portion 22b.

[0048] 4A and 4B are schematic plan views illustrating the sensor according to the first embodiment. These figures are plan views of the layer including the first resistive member 11 and the second resistive member 12. As shown in FIG. 4(a), the first detection element 11E may include a first layer 15a and a second layer 15b. The first layer 15a and the second layer 15b have the same material and thickness as the first resistance member 11. The first resistance member 11 is provided between the first layer 15a and the second layer 15b. By providing these layers, warping (deformation) of the first detection element 11E is suppressed.

[0049] As shown in FIG. 4(b), the second detection element 12E may include a third layer 15c and a fourth layer 15d. The third layer 15c and the fourth layer 15d have the same material and thickness as the second resistance member 12. The second resistance member 12 is provided between the third layer 15c and the fourth layer 15d. By providing these layers, warping (deformation) of the second detection element 12E is suppressed.

[0050] FIG. 5 is a schematic plan view illustrating the sensor according to the first embodiment. 5, the sensor 111 according to this embodiment is provided with a fourth resistive terminal 54 in addition to the first resistive terminal 51, the second resistive terminal 52, the third resistive terminal 53, the first conductive terminal 61, and the second conductive terminal 62. Other configurations of the sensor 111 may be similar to those of the sensor 110.

[0051] In the sensor 111, the first resistive terminal 51 is electrically connected to the first resistive portion 11a. The second resistive terminal 52 is electrically connected to the first resistive other portion 11b. The third resistive terminal 53 is electrically connected to the second resistive other portion 12b. The fourth resistive terminal 54 is electrically connected to the second resistive portion 12a. The first conductive terminal 61 is electrically connected to the first conductive portion 21a. The second conductive terminal 62 is electrically connected to the first conductive other portion 21b.

[0052] In this case, a processing unit 70 may also be provided. The processing unit 70 is electrically connected to the first resistive terminal 51, the second resistive terminal 52, the third resistive terminal 53, the fourth resistive terminal 54, the first conductive terminal 61, and the second conductive terminal 62. The processing unit 70 is capable of performing a first operation. In the first operation, the processing unit 70 supplies a first current i1 between the first conductive terminal 61 and the second conductive terminal 62 to increase the temperature of the first detection element 11E. In the first operation, the processing unit 70 is capable of outputting a signal 70s corresponding to a first ratio of a first electrical resistance between the first resistive terminal 51 and the second resistive terminal 52 to a second electrical resistance between the third resistive terminal 53 and the fourth resistive terminal 54. For example, the other operations of the sensor 111 may be similar to those of the sensor 110.

[0053] In sensor 111, the change in electrical resistance of first detection element 11E caused by the presence or absence or concentration of the first element can be detected while suppressing other influences, thereby providing a sensor with improved characteristics.

[0054] In the sensors 110 and 111, for example, the configuration (shape, material, etc.) of the first detection element 11E and the configuration (shape, material, etc.) of the second detection element 12E may be substantially the same. In this case, there is substantially no difference in temperature rise between these detection elements due to the difference in configuration. Higher accuracy detection can be more easily achieved. For example, when obtaining the signal 70s, the processing unit 70 supplies a detection current to the first detection element 11E and the second detection element 12E. The detection current flows through the first resistive element 11 and the second resistive element 12. The temperature rise due to Joule heat generated by the detection current is substantially similar between the first detection element 11E and the second detection element 12E.

[0055] (Second embodiment) FIG. 6 is a schematic plan view illustrating the sensor according to the second embodiment. 6, the sensor 120 according to this embodiment is provided with a third conductive terminal 63 and a fourth conductive terminal 64 in addition to a first resistive terminal 51, a second resistive terminal 52, a third resistive terminal 53, a first conductive terminal 61, and a second conductive terminal 62. Other configurations of the sensor 120 may be similar to those of the sensor 110.

[0056] The third conductive terminal 63 is electrically connected to the second conductive portion 22a, and the fourth conductive terminal 64 is electrically connected to the second other conductive portion 22b.

[0057] The processing unit 70 is capable of performing the second operation. For example, the processing unit 70 is capable of performing the second operation by switching between the first operation and the second operation.

[0058] The processing unit 70 supplies a second current i2 between the third conductive terminal 63 and the fourth conductive terminal 64 to increase the temperature of the second detection element 12E. The second current i2 may be AC ​​or DC. In the second operation, the processing unit 70 can output a signal 70s corresponding to a second ratio of the third electrical resistance between the first resistive terminal 51 and the second resistive terminal 52 to the fourth electrical resistance between the second resistive terminal 52 and the third resistive terminal 53.

[0059] In this way, a first operation in which the first detection element 11E functions as a temperature sensor and a second operation in which the second detection element 12E functions as a temperature sensor may be switched and performed.

[0060] The processing unit 70 may be capable of outputting an average of the first ratio of the first operation and the second ratio of the second operation, thereby enabling detection with higher accuracy.

[0061] The third conductive terminal 63 and the fourth conductive terminal 64 may be provided on the sensor 111 .

[0062] In the above example, the current that flows when detecting the electrical resistance of the first resistance member 11 passes through the first support portion 31S and the first other support portion 31aS. At this time, the first current i1 that flows through the first conductive member 21 flows through the third support portion 33S and the third other support portion 33aS.

[0063] In the embodiment, the first current i1 flowing through the first conductive member 21 may pass through the first support portion 31S and the first other support portion 31aS.

[0064] For example, the first detection unit 10A may include a third conductive layer 53L (see FIG. 2(a)). At least a portion of the third conductive layer 53L is provided on the first support unit 31S. The first current i1 flowing between the first conductive terminal 61 and the first conductive portion 21a flows through the third conductive layer 53L. For example, the second detection unit 10B may further include a fourth conductive layer 54L (see FIG. 2(b)). At least a portion of the fourth conductive layer 54L is provided on the second support unit 32S. The fourth conductive layer 54L is electrically connected to the second conductive portion 22a. As described above, various modifications are possible in the embodiment.

[0065] (Third embodiment) FIG. 7 is a schematic plan view illustrating the sensor according to the third embodiment. 7, a sensor 130 according to this embodiment includes a third detection unit 10C. The sensor 130 includes a base 41, a first detection unit 10A, and a second detection unit 10B. The sensor 130 also includes the first resistive terminal 51, the second resistive terminal 52, the third resistive terminal 53, the first conductive terminal 61, and the second conductive terminal 62, which have already been described.

[0066] The base 41 includes a third base region 41c. The third detection unit 10C is provided in the third base region 41c. The third detection unit 10C includes a third detection element 13E. The third detection element 13E includes a fixed electrode E1 and a movable electrode E2. In this example, the third detection element 13E includes a member 13M and a third conductive member 23. In this example, the movable electrode E2 is provided between the fixed electrode E1 and the member 13M. The third conductive member 23 is provided between the movable electrode E2 and the member 13M.

[0067] A third gap g3 is provided between the fixed electrode E1 and the movable electrode E2. The distance between the fixed electrode E1 and the movable electrode E2 changes depending on the concentration of the first element contained in the environment surrounding the third detection element 13E. This is based on the deformation of the first movable electrode E2 caused by the first element being adsorbed to the movable electrode E2 and its surrounding member 13M. The capacitance between the fixed electrode E1 and the movable electrode E2 changes depending on the change in distance. The processing unit 70 can output a value corresponding to the change in capacitance. The third detection unit 10C is a capacitive sensor.

[0068] For example, the processing unit 70 can supply a current to the third conductive member 23. This current increases the temperature of the member 13M. For example, the first element can be more efficiently incorporated (e.g., adsorbed) into the member 13M. For example, the change in capacitance relative to the concentration of the first element can be increased. High sensitivity can be more easily obtained.

[0069] In the sensor 130, any of the configurations described in relation to the first and second embodiments can be applied to the first detection unit 10A and the second detection unit 10B.

[0070] In one example according to the embodiment, the first conductive member 21 may be provided between the base 41 (first base region 41a) and the first resistance member 11. For example, the distance along the Z-axis direction between the first base region 41a and the first conductive member 21 is shorter than the distance along the Z-axis direction between the first base region 41a and the first resistance member 11. In another example, the first resistance member 11 may be provided between the base 41 (first base region 41a) and the first conductive member 21. For example, the distance along the Z-axis direction between the first base region 41a and the first resistance member 11 is shorter than the distance along the Z-axis direction between the first base region 41a and the first conductive member 21.

[0071] In one example according to the embodiment, the second conductive member 22 may be provided between the base 41 (second base region 41b) and the second resistance member 12. For example, the distance along the Z-axis direction between the second base region 41b and the second conductive member 22 is shorter than the distance along the Z-axis direction between the second base region 41b and the second resistance member 12. In another example, the second resistance member 12 may be provided between the base 41 (second base region 41b) and the second conductive member 22. For example, the distance along the Z-axis direction between the second base region 41b and the second resistance member 12 is shorter than the distance along the Z-axis direction between the second base region 41b and the second conductive member 22.

[0072] In an embodiment, the processing unit 70 may include a current source. The processing unit 70 may include a voltage source. Currents supplied from the current source or voltage source are provided to the sensing element. One current flows through a conductive element. Another current is supplied to a resistive element and can be used to sense a value corresponding to the resistance of the resistive element.

[0073] The embodiment may include the following configurations (e.g., technical solutions). (Configuration 1) a substrate including a first substrate region and a second substrate region; a first detection unit provided in the first substrate region, the first detection unit including a first detection element, the first detection element including a first resistive member and a first conductive member, the first resistive member including a first resistive portion and a first other resistive portion, and the first conductive member including a first conductive portion and a first other conductive portion; a second detection unit provided in the second substrate region, the second detection unit including a second detection element, the second detection element including a second resistive member and a second conductive member, the second resistive member including a second resistive portion and a second other resistive portion, and the second conductive member including a second conductive portion and a second other conductive portion; a first resistor terminal electrically connected to the first resistor portion; a second resistor terminal electrically connected to the first resistor portion and the second resistor portion; a third resistor terminal electrically connected to the other portion of the second resistor; a first conductive terminal electrically connected to the first conductive portion; a second conductive terminal electrically connected to the first conductive other portion; A sensor equipped with

[0074] (Configuration 2) The device further includes a connecting conductive member provided on the base, 2. The sensor according to claim 1, wherein the connecting conductive member electrically connects the first resistor portion and the second resistor portion.

[0075] (Configuration 3) a processing unit electrically connected to the first resistor terminal, the second resistor terminal, the third resistor terminal, the first conductive terminal, and the second conductive terminal; the processing unit is capable of performing a first operation of supplying a first current between the first conductive terminal and the second conductive terminal to increase a temperature of the first detection element; 3. The sensor of claim 1, wherein the processing unit is capable of outputting a signal corresponding to a first ratio of a first electrical resistance between the first resistive terminal and the second resistive terminal to a second electrical resistance between the second resistive terminal and the third resistive terminal in the first operation.

[0076] (Configuration 4) a substrate including a first substrate region and a second substrate region; a first detection unit provided in the first substrate region, the first detection unit including a first detection element, the first detection element including a first resistive member and a first conductive member, the first resistive member including a first resistive portion and a first other resistive portion, and the first conductive member including a first conductive portion and a first other conductive portion; a second detection unit provided in the second substrate region, the second detection unit including a second detection element, the second detection element including a second resistive member and a second conductive member, the second resistive member including a second resistive portion and a second other resistive portion, and the second conductive member including a second conductive portion and a second other conductive portion; a first resistor terminal electrically connected to the first resistor portion; a second resistor terminal electrically connected to the other portion of the first resistor; a third resistor terminal electrically connected to the other portion of the second resistor; a fourth resistor terminal electrically connected to the second resistor portion; a first conductive terminal electrically connected to the first conductive portion; a second conductive terminal electrically connected to the first conductive other portion; A sensor equipped with

[0077] (Configuration 5) a processing unit electrically connected to the first resistor terminal, the second resistor terminal, the third resistor terminal, the fourth resistor terminal, the first conductive terminal, and the second conductive terminal; the processing unit is capable of performing a first operation of supplying a first current between the first conductive terminal and the second conductive terminal to increase a temperature of the first detection element; 5. The sensor of claim 4, wherein the processing unit is capable of outputting a signal corresponding to a first ratio of a first electrical resistance between the first resistive terminal and the second resistive terminal to a second electrical resistance between the third resistive terminal and the fourth resistive terminal in the first operation.

[0078] (Configuration 6) The sensor of configuration 3 or 5, wherein the first ratio varies depending on the concentration of a first element contained in the atmosphere surrounding the first detection element and the second detection element.

[0079] (Configuration 7) The sensor of configuration 3 or 5, wherein the first electrical resistance when the temperature of the first detection element increases changes depending on the concentration of a first element contained in an atmosphere surrounding the first detection element.

[0080] (Configuration 8) 8. The sensor of claim 6 or 7, wherein the first element includes at least one selected from the group consisting of hydrogen, helium, carbon dioxide, methane, and sulfur hexafluoride.

[0081] (Configuration 9) a third conductive terminal electrically connected to the second conductive portion; a fourth conductive terminal electrically connected to the second conductive other portion; Equipped with the processing unit is capable of switching between the first operation and a second operation in which a second current is supplied between the third conductive terminal and the fourth conductive terminal to increase a temperature of the second detection element, and The sensor of any one of configurations 5 to 8, wherein the processing unit is capable of outputting a signal corresponding to a second ratio of a third electrical resistance between the first resistive terminal and the second resistive terminal to a fourth electrical resistance between the second resistive terminal and the third resistive terminal in the second operation.

[0082] (Configuration 10) 10. The sensor of claim 9, wherein the processing unit is capable of outputting an average of the first ratio and the second ratio.

[0083] (Configuration 11) 11. The sensor according to any one of configurations 1 to 10, wherein at least one of the second conductive portion and the second other conductive portion is at a floating potential or a fixed potential.

[0084] (Configuration 12) 12. The sensor according to any one of configurations 1 to 11, wherein the second conductive member is a dummy conductive member.

[0085] (Configuration 13) the first detection unit further includes a first connection unit and a first support unit; the first support portion is fixed to the base, a portion of the first connection portion is supported by the first support portion; another part of the first connection portion supports the first detection element away from the first base region; the second detection unit further includes a second connection unit and a second support unit; the second support portion is fixed to the base, a portion of the second connection portion is supported by the second support portion; 13. The sensor according to any one of configurations 1 to 12, wherein another part of the second connection portion supports the second detection element away from the second base region.

[0086] (Configuration 14) a first gap is provided between the first substrate region and the first detection element; 14. The sensor of claim 13, wherein a second gap is provided between the second substrate region and the second sensing element.

[0087] (Configuration 15) the first detection unit further includes a first other connection unit and a first other support unit; the first other support part is fixed to the base, a portion of the first other connection portion is supported by the first other support portion; another part of the first other connection portion supports the first detection element away from the first base region; the second detection unit further includes a second other connection unit and a second other support unit, the second other support part is fixed to the base, a portion of the second other connection portion is supported by the second other support portion; another part of the second other connection portion supports the second detection element away from the second base region; at least a part of the first detection element is located between the first connection portion and the first other connection portion; The sensor of configuration 13 or 14, wherein at least a portion of the second detection element is located between the second connection portion and the second other connection portion.

[0088] (Configuration 16) the first detection unit further includes a first conductive layer; At least a portion of the first conductive layer is provided on the first support portion, a current flowing between the first resistor terminal and the first resistor portion flows through the first conductive layer; the second detection unit further includes a second conductive layer; At least a portion of the second conductive layer is provided on the second support portion, 16. The sensor of claim 15, wherein the current flowing between the second resistive terminal and the second resistive portion flows through the second conductive layer.

[0089] (Configuration 17) the first detection unit further includes a third conductive layer; at least a portion of the third conductive layer is provided on the first support portion; 17. The sensor of claim 16, wherein the first current flowing between the first conductive terminal and the first conductive portion flows through the third conductive layer.

[0090] (Configuration 18) the second detection unit further includes a fourth conductive layer; at least a portion of the fourth conductive layer is provided on the second support portion; 18. The sensor of claim 17, wherein the fourth conductive layer is electrically connected to the second conductive portion.

[0091] (Configuration 19) the first detection unit further includes a third connection unit, a third support unit, and a third conductive layer; the third support portion is fixed to the base, a portion of the third connection portion is supported by the third support portion; another part of the third connection portion supports the first detection element away from the first base region; at least a portion of the third conductive layer is provided on the third support portion; 17. The sensor of claim 16, wherein the first current flowing between the first conductive terminal and the first conductive portion flows through the third conductive layer.

[0092] (Configuration 20) the second detection unit further includes a fourth connection unit, a fourth support unit, and a fourth conductive layer; the fourth support portion is fixed to the base, a portion of the fourth connection portion is supported by the fourth support portion, another part of the fourth connection portion supports the second detection element away from the second base region; at least a portion of the fourth conductive layer is provided on the fourth support portion, 20. The sensor of claim 19, wherein the fourth conductive layer is electrically connected to the second conductive portion.

[0093] According to the embodiment, a sensor capable of improving characteristics can be provided.

[0094] The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, the specific configurations of the elements included in the sensor, such as the substrate, detection unit, and processing unit, are within the scope of the present invention as long as a person skilled in the art can implement the present invention in a similar manner and obtain similar effects by appropriately selecting them from known ranges.

[0095] Furthermore, any combination of two or more elements of each specific example within the scope of technical feasibility is also included within the scope of the present invention as long as it includes the gist of the present invention.

[0096] In addition, all sensors that can be implemented by a person skilled in the art by appropriately modifying the design based on the sensor described above as an embodiment of the present invention also fall within the scope of the present invention as long as they include the gist of the present invention.

[0097] In addition, within the scope of the concept of the present invention, a person skilled in the art may come up with various modifications and alterations, and it will be understood that these modifications and alterations also fall within the scope of the present invention.

[0098] Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be embodied in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included within the scope and spirit of the invention, and are also included in the scope of the invention and its equivalents as defined in the claims. [Explanation of symbols]

[0099] 10A to 10C...first to third detection portions, 11, 12...first and second resistance members, 11E to 13E...first to third detection elements, 11a, 12a...first and second resistance portions, 11b, 12b...first and second other resistance portions, 13M...member, 15a to 15d...first to fourth layers, 18A, 18B...first and second insulating portions, 21 to 23...first to third conductive members, 21a, 22a...first and second conductive portions, 21b, 22b...first and second other conductive portions, 25...connecting conductive member, 31C to 34C...first to fourth connecting portions, 31S to 34S...first to fourth supporting portions, 31aC to 34aC...first to fourth other connecting portions, 31aS~34aS...first to fourth other support parts, 41...base body, 41a~41c...first to third base region, 41i...insulating film, 41s...substrate, 51~54...first to fourth resistance terminals, 51L~54L...first to fourth conductive layers, 51M~54M...wiring layer, 51aL~54aL...first to fourth other conductive layers, 51aM~54aM...wiring layer, 61~64...first to fourth conductive terminals, 70...processing section, 70s...signal, 110, 111, 120, 130...sensor, E1...fixed electrode, E2...movable electrode, g1~g3...first to third void, i1, i2...1st, 2nd current

Claims

[Claim 1] a substrate including a first substrate region and a second substrate region; a first detection unit provided in the first base region, the first detection unit including a first detection element, the first detection element including a first resistive member and a first conductive member, the first resistive member including a first resistive portion and a first other resistive portion, and the first conductive member including a first conductive portion and a first other conductive portion; a second detection unit provided in the second substrate region, the second detection unit including a second detection element, the second detection element including a second resistive member and a second conductive member, the second resistive member including a second resistive portion and a second other resistive portion, and the second conductive member including a second conductive portion and a second other conductive portion; a first resistor terminal electrically connected to the first resistor portion; a second resistor terminal electrically connected to the first resistor portion and the second resistor portion; a third resistor terminal electrically connected to the other portion of the second resistor; a first conductive terminal electrically connected to the first conductive portion; a second conductive terminal electrically connected to the first conductive other portion; A sensor equipped with

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