Light-emitting chip, full-color light-emitting structure, and method for manufacturing the same

Abstract

This invention provides a light-emitting chip, a full-color light-emitting structure, and a method for manufacturing the same. [Solution] The light-emitting chip includes a flip-chip epitaxial semiconductor structure and a frequency multiplier substrate. The flip-chip epitaxial semiconductor structure emits light having a wavelength. The frequency multiplier substrate is bonded to the flip-chip epitaxial semiconductor structure. After the light passes through the frequency multiplier substrate, the light is converted and its wavelength is reduced to substantially half of the original.

Description

[Technical Field]

[0001] The present invention relates to a light-emitting chip, a full-color light-emitting structure, and a method for manufacturing the same, and more particularly to a surface-emitting laser chip, a full-color surface-emitting laser structure, and a method for manufacturing the same. [Background technology]

[0002] Conventional laser projectors typically use a laser light source that shines a blue laser beam onto a fluorescent wheel to generate yellow light, which is then separated into red and green light through a spectral mirror. This generates the three primary colors of light—red, green, and blue—and the resulting mixture of light forms an image. However, the optical mechanisms, such as the fluorescent wheel and spectral mirror, have a certain volume, making it difficult to meet the demand for miniaturization.

[0003] Currently, many display technologies are employed in VR (Virtual Reality) and AR (Augmented Reality) technologies, including Liquid Crystal Displays (LCDs), Liquid Crystal on Silicon (LCoS), Digital Light Processing (DLP), Micro Light-Emitting Diode Displays (Micro LED Displays), Micro Organic Light-Emitting Diode Displays (Micro OLEDs), and Laser Beam Scanning (LBS). Among these, Micro LEDs, Micro OLEDs, and LBS have the advantage of miniaturizing the light source. These related display technologies are currently developing rapidly. Specifically, when using edge-emitting lasers (EELs) as the three primary color laser light sources (red, green, and blue - RGB) required for full-color LBS technology, although the technology is relatively mature, the elliptical shape of EEL lasers necessitates additional lenses to improve the shape of the light source. Furthermore, in actual applications, EEL lasers typically require additional reflective mirrors, making it difficult to meet the requirements for miniaturization.

[0004] On the other hand, vertical-cavity surface-emitting lasers (VCSELs) are a type of surface-emitting laser in which the active region is designed parallel to the chip surface, allowing the laser beam to be emitted perpendicularly from the chip surface. Compared to edge-emitting lasers, VCSELs typically have a circular light beam, a smaller light spot, and a more uniform divergence angle, making them particularly suitable for uniform illumination over large areas. However, VCSEL green lasers still face difficult technical challenges, such as low reliability and low optical efficiency. Therefore, providing a compact laser light source applicable to VR / AR devices is an urgent issue that needs to be addressed. [Overview of the project]

[0005] The main objective of this invention is to provide an innovative light-emitting chip, a full-color light-emitting structure, and a method for manufacturing the same. This invention utilizes a gallium arsenide substrate to generate a highly optically efficient and reliable surface-emitting red laser, and converts the laser wavelength using frequency doubling technology, also known as second harmonic generation (SHG) technology. This allows for the development of stable blue and green laser chips. As a full-color laser light source, this invention can meet the specifications required for compact light sources in VR / AR devices.

[0006] To achieve the above objective, the present invention provides a light-emitting chip. The light-emitting chip includes a flip-chip epitaxial semiconductor structure and a frequency multiplier substrate. The flip-chip epitaxial semiconductor structure emits light having a wavelength. The frequency multiplier substrate is bonded to the flip-chip epitaxial semiconductor structure. After the light passes through the frequency multiplier substrate, the light is converted and its wavelength is reduced to substantially half of the original.

[0007] In an embodiment of the light-emitting chip of the present invention, the wavelength of light emitted by the flip-chip type epitaxial semiconductor structure is 600 to 1065 nanometers (nm).

[0008] In embodiments of the light-emitting chip of the present invention, the material for the flip-chip type epitaxial semiconductor structure is one or a combination selected from the group consisting of indium gallium phosphide (InGaP), aluminum gallium indium phosphide (AlGaInP), gallium arsenide (GaAs), aluminum arsenide (AlAs), and aluminum gallium arsenide (AlGaAs).

[0009] In embodiments of the light-emitting chip of the present invention, the material of the frequency multiplier substrate is one or a combination selected from the group consisting of neodymium-doped yttrium aluminum borate (NYAB), ytterbium-doped yttrium aluminum borate (Yb:YAB), and neodymium or ytterbium-doped calcium oxide borate (Nd / Yb:RECOB).

[0010] In an embodiment of the light-emitting chip of the present invention, the light-emitting chip further includes a suppression layer, which is installed on the frequency multiplier substrate. The suppression layer limits the light that has passed through the frequency multiplier substrate, preventing portions exceeding a specific wavelength from passing through the suppression layer.

[0011] In an embodiment of the light-emitting chip of the present invention, the flip-chip type epitaxial semiconductor structure is a flip-chip type surface-emitting laser chip.

[0012] To achieve the above objective, the present invention provides a full-color light-emitting structure comprising a substrate, a first light-emitting chip, a second light-emitting chip, and a third light-emitting chip. The first light-emitting chip, the second light-emitting chip, and the third light-emitting chip are each mounted on a substrate and emit first light with a wavelength of 620 to 750 nanometers (nm), second light with a wavelength of 450 to 495 nanometers (nm), and third light with a wavelength of 495 to 570 nanometers (nm), respectively.

[0013] In an embodiment of the full-color light-emitting structure of the present invention, the first light-emitting chip is a surface-emitting laser chip.

[0014] In an embodiment of the full-color light-emitting structure of the present invention, the first light-emitting chip is a flip-chip surface-emitting laser chip.

[0015] <00,00077>In an embodiment of the full-color light-emitting structure of the present invention, the second and third light-emitting chips are flip-chip surface-emitting laser chips.

[0016] In an embodiment of the full-color light-emitting structure of the present invention, the material of the flip-chip epitaxial semiconductor structure is one or a combination selected from the group consisting of indium gallium phosphide (InGaP), aluminum gallium indium phosphide (AlGaInP), gallium arsenide (GaAs), aluminum arsenide (AlAs), and aluminum gallium arsenide (AlGaAs).

[0017] In an embodiment of the full-color light-emitting structure of the present invention, the material of the frequency-doubling substrate is one or a combination selected from the group consisting of neodymium-doped yttrium aluminum borate (Neodymium Yttrium Aluminum Borate, NYAB), ytterbium-doped yttrium aluminum borate (Yb:YAB), and neodymium or ytterbium-doped calcium oxide borate (Nd / Yb:RECOB).

[0018] In an embodiment of the full-color light-emitting structure of the present invention, the full-color light-emitting structure further includes a cover, The cover has three light extraction windows respectively corresponding to the first light-emitting chip, the second light-emitting chip, and the third light-emitting chip, The first light, the second light, and the third light are respectively radiated to the outside through the light extraction windows.

[0019] In an embodiment of the full-color light-emitting structure of the present invention, the full-color light-emitting structure further includes a first suppression layer installed on each of the light extraction windows, After the second light and the third light pass through their respective light extraction windows, the first suppression layer restricts the light with wavelengths exceeding a specific wavelength from passing through the first suppression layer.

[0020] In an embodiment of the full-color light-emitting structure of the present invention, the full-color light-emitting structure further includes a second suppression layer and a third suppression layer respectively installed on the second light-emitting chip and the third light-emitting chip. The second suppression layer and the third suppression layer respectively restrict the second light and the third light, so that the light with wavelengths exceeding a specific wavelength cannot pass through the second suppression layer or the third suppression layer.

[0021] To achieve the above object, the present invention provides a method for manufacturing a light-emitting chip. The method for manufacturing a light-emitting chip includes a step of forming a flip-chip type epitaxial semiconductor structure that outputs light having a wavelength, and a step of bonding a frequency doubling substrate to the flip-chip type epitaxial semiconductor structure. After the light passes through the frequency doubling substrate, the light is converted and its wavelength is substantially reduced to half of the original.

[0022] In an embodiment of the method for manufacturing a light-emitting chip of the present invention, the step of forming a flip-chip type epitaxial semiconductor structure includes a step of forming an epitaxial composite layer on an epitaxial growth substrate.

[0023] In an embodiment of the method for manufacturing a light-emitting chip of the present invention, after bonding the frequency doubling substrate to the flip-chip type epitaxial semiconductor structure, the method further includes a step of removing the epitaxial growth substrate.

[0024] In an embodiment of the method for manufacturing a light-emitting chip of the present invention, the method further includes a step of installing a suppression layer on the frequency doubling substrate, The suppression layer restricts the light passing through the frequency doubling substrate, so that the portion exceeding a specific wavelength cannot pass through the suppression layer.

[0025] ]To achieve the above objective, the present invention provides a method for manufacturing a full-color light-emitting structure. The method for manufacturing a full-color light-emitting structure includes the steps of: preparing a substrate; placing a first light-emitting chip that emits first light with a wavelength of 620 to 750 nanometers (nm) on the substrate; placing a second light-emitting chip that emits second light with a wavelength of 450 to 495 nanometers (nm) on the substrate; and placing a third light-emitting chip that emits third light with a wavelength of 495 to 570 nanometers (nm) on the substrate.

[0026] Those skilled in the art will be able to understand other objects of the present invention, as well as the technical means and embodiments of the present invention, by referring to the drawings and the embodiments described later. [Brief explanation of the drawing]

[0027] [Figure 1(A)] Schematic diagram showing the manufacturing of a light-emitting chip in an embodiment of the present invention. [Figure 1(B)] Schematic diagram showing the manufacturing of a light-emitting chip in an embodiment of the present invention. [Figure 1(C)] Schematic diagram showing the manufacturing of a light-emitting chip in an embodiment of the present invention. [Figure 1(D)] Schematic diagram showing the manufacturing of a light-emitting chip in an embodiment of the present invention. [Figure 1(E)] Schematic diagram showing the manufacturing of a light-emitting chip in an embodiment of the present invention. [Figure 1(F)] Schematic diagram showing the manufacturing of a light-emitting chip in an embodiment of the present invention. [Figure 1(G)] Schematic diagram showing the manufacturing of a light-emitting chip in an embodiment of the present invention. [Figure 1(H)] Schematic diagram showing the manufacturing of a light-emitting chip in an embodiment of the present invention. [Figure 1(I)] Schematic diagram showing the manufacturing of a light-emitting chip in an embodiment of the present invention. [Figure 1(J)] Schematic diagram showing the manufacturing of a light-emitting chip in an embodiment of the present invention. [Figure 2] Schematic diagram showing a full-color light-emitting structure in an embodiment of the present invention. [Figure 3] Schematic diagram showing a full-color light-emitting structure in another embodiment of the present invention. [Figure 4] Flowchart of the manufacturing process for the light-emitting chip of the present invention [Figure 5] Flowchart of the manufacturing process for the full-color light-emitting structure of the present invention [Modes for carrying out the invention]

[0028] The present invention will be described below through examples. These examples illustrate the embodiments of the present invention and are not intended to limit the invention to any particular environment, application, or specific configuration described therein. Therefore, while the examples illustrate the present invention, they do not limit it. Components not directly related to the present invention are omitted and not shown in the embodiments and drawings. The dimensional relationships of the components in the drawings are for ease of understanding and do not limit the actual dimensions.

[0029] This invention discloses technology relating to light-emitting chips and their applications to full-color light-emitting structures. More specifically, this invention relates to light-emitting chips related to vertical-cavity surface-emitting laser (VCSEL) chips. The method for manufacturing the light-emitting chip of this invention will be described in detail below. As shown in Figure 1, in the embodiment of this invention, an epitaxial growth substrate 100 is first prepared. Gallium arsenide (GaAs) can be used as the material for this epitaxial growth substrate 100, but is not limited to this. The advantage of using gallium arsenide as an epitaxial growth substrate is that gallium arsenide can support the growth of lattice-matched and conductive aluminum gallium arsenide (Alx Gay As) based materials. These materials can be used as distributed Bragg reflection mirrors (DBRs) and function as mirror surfaces in VCSEL structures. The wavelength range that gallium arsenide can support is approximately 600 to 1065 nanometers (nm), which can satisfy the requirement for red among the RGB primary colors as a full-color laser light source. Regarding blue and green, a complete RGB primary color light source can be achieved by converting red light to blue and green light, respectively, using frequency multiplication technology. Details will be described later.

[0030] As shown in Figure 1(B), epitaxial growth is performed on an epitaxial growth substrate 100 using metal-organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE) techniques to form an epitaxial composite layer 110. The epitaxial composite layer 110 includes sequentially formed N-type epitaxial DBR layers 102, multiple quantum well (MQW) layers 104, and P-type epitaxial DBR layers 106. The composition of the epitaxial material in each layer can be adjusted according to the emission wavelength band (e.g., 650 nanometers (nm), 940 nanometers (nm), 1065 nanometers (nm)). Specifically, the materials that lattice-match with the gallium arsenide epitaxial growth substrate are one or a combination selected from the group consisting of indium gallium phosphide (InGaP), aluminum gallium indium phosphide (AlGaInP), gallium arsenide (GaAs), aluminum arsenide (AlAs), and aluminum gallium arsenide (AlGaAs). These materials can be appropriately adjusted as needed and used as epitaxial growth materials.

[0031] As shown in Figure 1(C), a current-blocking layer 108 is then formed in the epitaxial composite layer 110 using either wet oxidation or ion implantation. For example, areas with a high aluminum content are oxidized to form aluminum oxide (Al2O3), which blocks the flow of current laterally, ensuring that the current flows only perpendicular to the tip direction. In other words, the current path can be controlled by precisely controlling the position and thickness of the oxide layer. Next, as shown in Figure 1(D), the P-type contact electrode 112 is manufactured. This process includes insulating the electrode from the epitaxial composite layer and designing an appropriate electrode pattern based on the position of the current-blocking layer 108 to ensure that the laser light is emitted smoothly.

[0032] As shown in Figure 1(E), a frequency doubling substrate 200 is then bonded to the epitaxial composite layer 110 in order to perform frequency doubling of the laser light. When the laser light passes through the frequency doubling substrate 200, the material in the substrate excites its electrons and generates vibrations, and the frequency of these vibrations becomes twice the frequency of the input laser light. Therefore, the frequency of the laser light after frequency doubling is substantially twice the original frequency, and its wavelength is shortened to half of the original. The material of this frequency doubling substrate is selected from the group consisting of neodymium-doped yttrium aluminum borate (NYAB), ytterbium-doped yttrium aluminum borate (Yb:YAB), and neodymium or ytterbium-doped calcium oxide borate (Nd / Yb:RECOB), or a combination thereof, but is not limited to these. Any material that is easy to manufacture on a wafer and has high frequency multiplication conversion efficiency can be used as the frequency multiplier substrate material in this invention. In a specific embodiment of this invention, an epitaxial composite layer 110 emitting a near-infrared laser with a wavelength of 1065 nanometers (nm) can be converted to a green laser with a wavelength of 532 nanometers (nm) by combining it with a suitable frequency multiplier substrate 200. Alternatively, an epitaxial composite layer 110 emitting an infrared laser with a wavelength of 940 nanometers (nm) can be converted to a blue laser with a wavelength of 470 nanometers (nm) by combining it with a suitable frequency multiplier substrate 200.

[0033] Next, as shown in Figure 1(E), a transparent bonding material 120 is used when performing wafer bonding between the epitaxial composite layer 110 and the frequency multiplier substrate 200. The transparent bonding material is a transparent resin such as epoxy resin, or a transparent dielectric layer such as silicon dioxide (SiO2) or aluminum oxide (Al2O3). These materials bond the frequency multiplier substrate 200 to the epitaxial composite layer 110. After frequency multiplication conversion, the wavelength of the laser light emitted from the epitaxial composite layer 110 is shortened to substantially half of the original wavelength. Next, as shown in Figure 1(F), after bonding the frequency multiplier substrate 200 to the epitaxial composite layer 110, the epitaxial growth substrate 100 is removed.

[0034] As shown in Figure 1(G), the epitaxial composite layer 110 is subjected to a process of forming multiple through-holes, such as a through-hole 114 for a P-type contact electrode and a groove 116 for separating the P-type and N-type. Next, as shown in Figure 1(H), an N-type contact electrode 118 is formed. Subsequently, as shown in Figure 1(I), an electrode pad formation process for the flip-chip epitaxial semiconductor structure is performed. In the through-hole 114, P-type contact metal is filled by metal plating to form a P-type contact electrode pad 112' that is electrically connected to the P-type contact electrode 112. An N-type contact electrode pad 118' is also formed on the N-type contact electrode 118, and the two are electrically connected. Furthermore, the laser chip generates a lot of waste heat during the light emission process. As shown in Figure 1(I), the flip-chip epitaxial semiconductor structure can quickly conduct and dissipate this waste heat to the outside through these two electrode pads, thereby improving the performance of the laser chip.

[0035] In a more preferred embodiment, in a VCSEL for frequency multiplication conversion, since the conversion efficiency of frequency multiplication cannot reach 100% complete conversion, a suppression layer 300 is additionally installed on the light extraction surface of the frequency multiplication substrate 200, as shown in Figure 1(J), to block unconverted light. This suppression layer limits the original infrared light and prevents it from passing through the suppression layer. Specifically, the suppression layer 300 is an optical coating formed by alternately laminating high refractive index materials such as silicon dioxide (SiO2) and titanium dioxide (TiO2) with low refractive index materials. These optical coatings can adjust the wavelength range they reflect or transmit depending on their thickness and refractive index. For example, in a blue VCSEL chip, the suppression layer 300 can suppress the transmission of infrared lasers with wavelengths of 940 nanometers (nm) or higher. In a green VCSEL chip, the suppression layer 300 can suppress the transmission of near-infrared lasers with wavelengths of 1065 nanometers (nm) or higher.

[0036] The technical details described above relate to light-emitting chips for red, blue, and green lasers. Next, a full-color light-emitting structure, i.e., a full-color VCSEL light-emitting structure, is constructed based on these three basic color light-emitting chips. Figure 2 is a schematic diagram of the full-color light-emitting structure 1 in an embodiment of the present invention. In this embodiment, the full-color light-emitting structure 1 includes a substrate 10, a cover 20, a first light-emitting chip R, a second light-emitting chip B, and a third light-emitting chip G. The first light-emitting chip R, the second light-emitting chip B, and the third light-emitting chip G are each placed on the substrate 10 and electrically connected to the substrate.

[0037] Specifically, the first light-emitting chip R is a red surface-emitting laser chip or a red flip-chip surface-emitting laser chip. The epitaxial composite layer 110R of the first light-emitting chip R. 650 This is a red laser L with a wavelength of 620-750 nanometers (nm). Remits. The substrate 210 is a support. The substrate 210 is a sapphire substrate. Next, the second light-emitting chip B is a blue flip-chip surface-emitting laser chip. This blue flip-chip surface-emitting laser chip is a blue light-emitting chip applying the frequency doubling conversion technology of the present invention. The epitaxial composite layer 110R of the second light-emitting chip B 940 emits an infrared laser L with a wavelength of 900 to 990 nanometers (nm) 940 and, by combining with the frequency doubling substrate 200, is converted into a blue laser L with a wavelength of 450 to 495 nanometers (nm) B Note that the third light-emitting chip G is a green flip-chip surface-emitting laser chip. This green flip-chip surface-emitting laser chip is also a green light-emitting chip applying the frequency doubling conversion technology. The epitaxial composite layer 110R of the third light-emitting chip G 1065 emits a near-infrared laser L with a wavelength of 990 to 1140 nanometers (nm) 1065 and, by combining with the frequency doubling substrate 200, is converted into a green laser L with a wavelength of 495 to 570 nanometers (nm) G is converted.

[0038] As shown in FIG. 2, the full-color light-emitting structure 1 of the present invention further includes a cover 20. The cover 20 has three light extraction windows corresponding to the first light-emitting chip R, the second light-emitting chip B, and the third light-emitting chip G. The first light emitted by the first light-emitting chip R (i.e., the red laser L R ), the second light emitted by the second light-emitting chip B (i.e., the blue laser L B ), and the third light emitted by the third light-emitting chip G (i.e., the green laser L GThe light from each of these sources is radiated to the outside through each light extraction window. In a more preferred embodiment, a suppression layer 300 is placed on each light extraction window of the cover 20 to precisely control the mixing effect of the light and to prevent leakage to the outside of the portion of the light that has not been frequency multiplied by the frequency multiplier substrate. The suppression layer 300 restricts the second and third light that has passed through each light extraction window and prevents some of the light exceeding a certain wavelength from passing through the suppression layer 300. For example, the suppression layer 300 in this embodiment can restrict the transmission of light with a wavelength of 940 nanometers (nm) or more, thereby making it possible to achieve full color using three color light-emitting chips.

[0039] Figure 3 is a schematic diagram of a full-color light-emitting structure 1 in another embodiment of the present invention. The difference between the embodiment shown in Figure 3 and the embodiment shown in Figure 2 is that in the full-color light-emitting structure 1 of Figure 3, the suppression layer 300 is not installed in the light extraction window of the cover 20, but rather, as shown in Figure 1(J), the suppression layer 300 is installed on each light-emitting chip. Other parts are the same in both embodiments. Specifically, the full-color light-emitting structure 1 of Figure 3 further includes a second suppression layer 300B and a third suppression layer 300G. These suppression layers are installed on the second light-emitting chip B and the third light-emitting chip G, respectively, and prevent light exceeding a specific wavelength among the second and third light from passing through the second suppression layer 300B or the third suppression layer 300G. In other words, the frequency multiplier substrate 200 of the second light-emitting chip B is transmitted by an infrared laser L 940 If it is not possible to completely convert the frequency, the second light will have some infrared laser L 940 This will result in residual infrared laser L 940 The light is restricted by the second suppression layer 300B and cannot be transmitted. As a result, the second light is a blue laser L with a wavelength range of 450-495 nanometers (nm). B Only the light source is permeable. Similarly, the frequency multiplier substrate 200 of the third light-emitting chip G is transmitted by the near-infrared laser L 1065 If it is not possible to completely convert the frequency, the third light will have some near-infrared laser L 1065 These residual near-infrared lasers L 1065It is restricted by the third suppression layer 300G and cannot be transmitted. As a result, the third light is a green laser L with a wavelength range of 495-570 nanometers (nm). G Only certain colors of light are allowed to pass through. This design allows for precise control of each color of light, improving image quality.

[0040] Figure 4 is a flowchart of the manufacturing process of the light-emitting chip of the present invention. First, in step S01, a flip-chip type epitaxial semiconductor structure is formed. This flip-chip type epitaxial semiconductor structure emits light. The light has a wavelength. Next, in step S02, a frequency multiplier substrate is bonded to the flip-chip type epitaxial semiconductor structure. After the light generated by the flip-chip type epitaxial semiconductor structure passes through the frequency multiplier substrate, it is converted and its wavelength is reduced to substantially half of the original.

[0041] Figure 5 is a flowchart of the manufacturing process for the full-color light-emitting structure of the present invention. First, in step S01, a substrate is prepared. Next, in step S02, a first light-emitting chip that emits first light is placed on the substrate. The first light has a first wavelength. In step S03, a second light-emitting chip that emits second light is placed on the substrate. The second light has a second wavelength. In step S04, a third light-emitting chip that emits third light is placed on the substrate. The third light has a third wavelength. The first wavelength is 620 to 750 nanometers (nm). The second wavelength is 450 to 495 nanometers (nm). The third wavelength is 495 to 570 nanometers (nm). For the functions and configurations of the related elements in Figures 4 and 5, please refer to the technical content described above, and redundant explanations will be omitted here.

[0042] In summary, the present invention involves forming an epitaxial layer of a surface-emitting laser on a gallium arsenide epitaxial growth substrate, transferring the epitaxial composite layer to a frequency-multiplier substrate using wafer bonding technology, and then fabricating a flip-chip semiconductor vertical-cavity surface-emitting laser chip through semiconductor manufacturing processes such as photolithography, chemical processing, deposition, and fusion. After passing through the frequency-multiplier substrate, the wavelength of the surface-emitting laser light is substantially reduced to half of the original wavelength. By applying this technology, a 1065 nanometer near-infrared laser can be converted to a 532 nanometer green laser by frequency multiplication, and a 940 nanometer infrared laser can be converted to a 470 nanometer blue laser by frequency multiplication. The aforementioned wavelength VCSELs, together with a 670 nanometer red light VCSEL directly grown on a gallium arsenide substrate, form a full-color emission structure. In particular, this full-color light-emitting structure consists of three types of light-emitting chips—red, blue, and green—which are highly efficient and reliable, and does not require additional optical systems such as fluorescence wheels or spectral prisms. Therefore, the light-emitting chips and full-color light-emitting structure of the present invention can meet the demand for miniaturization of full-color laser light sources in VR and AR devices.

[0043] The above-described embodiments illustrate embodiments of the present invention and describe the characteristic configuration of the present invention. The present invention is not limited to the above embodiments. Modifications or equivalent arrangements that can be easily made by those skilled in the art are also within the scope of the present invention. The scope of protection of the rights of the present invention shall be based on the claims. [Explanation of symbols]

[0044] 1. Full-color light-emitting structure 10 circuit boards 20 Covers 100 Epitaxial Growth Substrates 102 N-type epitaxial DBR layer 104 Multiple quantum well layer 106 P-type epitaxial DBR layer 108 Current Block Layer 110 Epitaxial Composite Layer 110R 650 Epitaxial composite layer 110R 940 Epitaxial composite layer 110R 1065 Epitaxial composite layer 112 P-type contact electrodes 112' P-type contact electrode pads 114 Through hole 116 Groove 118 N-type contact electrode 118' N-type contact electrode pads 120 Transparent bonding material 200 Frequency Multiplier Substrate 210 circuit boards 300 suppression layer 300B 2nd suppression layer 300G 3rd suppression layer L B Blue laser L G Green laser L R Red laser L 940 Infrared laser L 1065 Near-infrared laser B. Second light-emitting chip G 3rd Light-Emitting Chip R First light-emitting chip

Claims

1. It is a light-emitting chip, A flip-chip type epitaxial semiconductor structure that emits light of a specific wavelength, The flip-chip type epitaxial semiconductor structure includes a frequency multiplier substrate bonded to the aforementioned flip-chip epitaxial semiconductor structure, A light-emitting chip in which, after the light passes through the frequency multiplier substrate, the light is converted and its wavelength is substantially reduced to half of the original wavelength.

2. The light-emitting chip according to claim 1, characterized in that the wavelength of the light output by the flip-chip type epitaxial semiconductor structure is 600 to 1065 nanometers (nm).

3. The light-emitting chip according to claim 1, characterized in that the material of the flip-chip type epitaxial semiconductor structure is one or a combination selected from the group consisting of indium gallium phosphide (InGaP), aluminum gallium indium phosphide (AlGaInP), gallium arsenide (GaAs), aluminum arsenide (AlAs), and aluminum gallium arsenide (AlGaAs).

4. The light-emitting chip according to claim 1, characterized in that the material of the frequency multiplier substrate is one or a combination selected from the group consisting of neodymium-doped yttrium aluminum borate (NYAB), ytterbium-doped yttrium aluminum borate (Yb:YAB), neodymium or ytterbium-doped calcium oxide borate (Nd / Yb:RECOB).

5. The present invention further includes a suppression layer installed on the frequency multiplier substrate, The light-emitting chip according to claim 1, characterized in that the suppression layer limits the light that has passed through the frequency multiplier substrate, so that portions exceeding a specific wavelength cannot pass through the suppression layer.

6. The light-emitting chip according to claim 1, characterized in that the flip-chip type epitaxial semiconductor structure is a flip-chip type surface-emitting laser chip.

7. It is a full-color light-emitting structure, circuit board and A first light-emitting chip is installed on the substrate and emits first light with a wavelength of 620 to 750 nanometers (nm), A second light-emitting chip, which is a light-emitting chip according to claim 1, is installed on the substrate and emits second light with a wavelength of 450 to 495 nanometers (nm), A full-color light-emitting structure comprising a third light-emitting chip, which is a light-emitting chip according to claim 1, installed on the substrate and emitting third light with a wavelength of 495 to 570 nanometers (nm), and a full-color light-emitting structure.

8. The full-color light-emitting structure according to claim 7, characterized in that the first light-emitting chip is a surface-emitting laser chip.

9. The full-color light-emitting structure according to claim 8, characterized in that the first light-emitting chip is a flip-chip type surface-emitting laser chip.

10. The full-color light-emitting structure according to claim 7, characterized in that the second light-emitting chip and the third light-emitting chip are flip-chip type surface-emitting laser chips.

11. The full-color light-emitting structure according to claim 7, characterized in that the material of the flip-chip type epitaxial semiconductor structure is one or a combination selected from the group consisting of indium gallium phosphide (InGaP), aluminum gallium indium phosphide (AlGaInP), gallium arsenide (GaAs), aluminum arsenide (AlAs), and aluminum gallium arsenide (AlGaAs).

12. The full-color light-emitting structure according to claim 7, characterized in that the material of the frequency multiplier substrate is one or a combination selected from the group consisting of neodymium-doped yttrium aluminum borate (NYAB), ytterbium-doped yttrium aluminum borate (Yb:YAB), and neodymium or ytterbium-doped calcium oxide borate (Nd / Yb:RECOB).

13. Including the cover, The cover has three light extraction windows corresponding to the first light-emitting chip, the second light-emitting chip, and the third light-emitting chip, respectively. The full-color light-emitting structure according to claim 7, characterized in that the first light, the second light, and the third light each pass through the light extraction window and are emitted to the outside.

14. The invention further includes a first suppression layer installed in each of the aforementioned light extraction windows, The full-color light-emitting structure according to claim 13, characterized in that the first suppression layer restricts the portion of light exceeding a specific wavelength after the second light and the third light have passed through each of the light extraction windows so that it cannot pass through the first suppression layer.

15. The invention further includes a second suppression layer and a third suppression layer, which are installed on the second light-emitting chip and the third light-emitting chip, respectively. The full-color light-emitting structure according to claim 7, characterized in that the second suppression layer and the third suppression layer each restrict the second light and the third light, respectively, so that light exceeding a specific wavelength cannot pass through the second suppression layer or the third suppression layer.

16. A method for manufacturing a light-emitting chip, A process for forming a flip-chip type epitaxial semiconductor structure that emits light of a specific wavelength, The process includes a step of bonding a frequency multiplier substrate to the flip-chip type epitaxial semiconductor structure, A method for manufacturing a light-emitting chip, wherein after the light passes through the frequency multiplier substrate, the light is converted so that its wavelength is substantially reduced to half of the original wavelength.

17. The manufacturing method according to claim 16, characterized in that the step of forming the flip-chip type epitaxial semiconductor structure includes the step of forming an epitaxial composite layer on an epitaxial growth substrate.

18. The manufacturing method according to claim 17, further comprising the step of removing the epitaxial growth substrate after bonding the frequency multiplier substrate to the flip-chip type epitaxial semiconductor structure.

19. The process further includes the step of installing a suppression layer on the frequency multiplier substrate, The manufacturing method according to claim 16, characterized in that the suppression layer limits the light that has passed through the frequency multiplier substrate, so that portions exceeding a specific wavelength cannot pass through the suppression layer.

20. A method for manufacturing a full-color light-emitting structure, The process of preparing the circuit board, A process of placing a first light-emitting chip that emits first light with a wavelength of 620 to 750 nanometers (nm) on a substrate, A step of placing a second light-emitting chip, which is a light-emitting chip according to claim 1 that emits a second light with a wavelength of 450 to 495 nanometers (nm), on the substrate, A method for manufacturing a full-color light-emitting structure, comprising the step of placing a third light-emitting chip, which is a light-emitting chip according to claim 1 that emits a third light with a wavelength of 495 to 570 nanometers (nm), on a substrate.

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