Power module

Abstract

This invention provides a power module capable of efficiently dissipating heat generated from semiconductor elements. [Solution] The device comprises a base material and semiconductor elements 120a and 120b, wherein the base material has an insulating member 112 and a metal member M11 including metal parts M111 and M112a which are integrated with each other, the metal part M111 has a semiconductor element mounting region R on the opposite side from the insulating member 112, and the metal part M112a is located in the semiconductor element mounting region R, and when viewed from a direction perpendicular to the semiconductor element mounting region R, the semiconductor elements 120a and 120 A power module 100 having an extended portion A112 extending from the semiconductor element 120a between b and b, and an extended portion A113 extending from the semiconductor element 120a toward the outside of the semiconductor element mounting region R, wherein the line segment L12 extending within the extended portion A113 and connecting the semiconductor element 120a and the outer periphery of the extended portion A113 is longer than the line segment L11 extending within the extended portion A112 and connecting the semiconductor element 120a and the outer periphery of the extended portion A112.

Description

Technical Field

[0001] The present disclosure relates to a power module and the like.

Background Art

[0002] Power modules are used in various fields such as automobiles, railways, power supply equipment, and industrial equipment. For example, a power module includes a base material and a semiconductor element supported by the base material. Various configurations have been considered for the configuration of the power module (see, for example, Patent Document 1 below).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] Regarding the power module, from the viewpoint of maintaining normal operation, it is required to efficiently dissipate the heat generated from the semiconductor element.

[0005] One aspect of the present disclosure aims to provide a power module capable of efficiently dissipating the heat generated from a semiconductor element.

Means for Solving the Problems

[0006] The present disclosure relates to the following [1] to [8] and the like. [1] A substrate and a first semiconductor element and a second semiconductor element supported on the substrate, wherein the substrate has an insulating member and a metal member including a first metal part and a second metal part integrated with each other, the first metal part has a semiconductor element mounting region on which the first semiconductor element and the second semiconductor element are mounted on the side opposite to the insulating member, the second metal part is located in part of the semiconductor element mounting region and, when viewed from a direction perpendicular to the semiconductor element mounting region, has a central part located at the position of the first semiconductor element and the position of the first semiconductor element A power module having an extending portion extending from a first semiconductor element and a second semiconductor element, wherein the extending portion includes a first extending portion located between the first semiconductor element and the second semiconductor element, and a second extending portion extending from the position of the first semiconductor element toward the outside of the semiconductor element mounting area, wherein the length of the longest line segment extending within the second extending portion and connecting the first semiconductor element and each position on the outer circumference of the second extending portion by the shortest distance is longer than the length of the longest line segment extending within the first extending portion and connecting the first semiconductor element and each position on the outer circumference of the first extending portion by the shortest distance. [2] A power module comprising a base material and a semiconductor element supported on the base material, wherein the base material has an insulating member and a metal member including a first metal part and a second metal part integrated with each other, the first metal part having a semiconductor element mounting region on which the semiconductor element is mounted on the side opposite to the insulating member, the second metal part being located in a part of the semiconductor element mounting region and having a central part located at the position of the semiconductor element when viewed from a direction perpendicular to the semiconductor element mounting region and an extending part extending from the position of the semiconductor element, the length of a line segment extending within the extending part and connecting the semiconductor element and a position on the outer periphery of the extending part on a straight line connecting the position furthest from the semiconductor element among the positions on the outer periphery of the semiconductor element mounting region and the semiconductor element by the shortest distance, is longer than the length of a line segment extending within the extending part and connecting the semiconductor element and a position on the outer periphery of the extending part on a straight line connecting the position closest to the semiconductor element among the positions on the outer periphery of the semiconductor element mounting region and the semiconductor element by the shortest distance. [3] The power module according to [2], wherein a single semiconductor element is mounted in the semiconductor element mounting area. [4] The power module according to [2], wherein a plurality of semiconductor elements are mounted in the semiconductor element mounting area. [5] The power module according to [1], further comprising a metal member M disposed between the substrate and the first semiconductor element. [6] The power module according to any one of [2] to [4], further comprising a metal member M disposed between the substrate and the semiconductor element. [7] The power module according to [5] or [6], wherein the metal member M contains at least one selected from the group consisting of copper and silver. [8] The power module according to any one of [1] to [7], wherein the first metal part and the second metal part contain at least one selected from the group consisting of copper and aluminum. [Effects of the Invention]

[0007] According to one aspect of this disclosure, it is possible to provide a power module that can efficiently dissipate heat generated from semiconductor elements. [Brief explanation of the drawing]

[0008] [Figure 1] Figure 1 is a schematic plan view showing an example of a power module. [Figure 2] Figure 2 is a schematic cross-sectional view along the line II-II in Figure 1. [Figure 3] Figure 3 is a schematic plan view showing another example of a power module. [Figure 4] Figure 4 is a schematic plan view showing another example of a power module. [Figure 5] Figure 5 is a schematic cross-sectional view along the VV line in Figure 4. [Figure 6] Figure 6 is a schematic plan view showing another example of a power module. [Modes for carrying out the invention]

[0009] The embodiments of this disclosure will be described below. However, this disclosure is not limited to the embodiments described below and can be implemented in various ways within the scope of its gist.

[0010] Unless otherwise specified, the materials exemplified herein may be used individually or in combination of two or more. The term "layer" includes not only structures that form a shape across the entire surface when viewed in a plan view, but also structures that form a shape on only a part of the surface. The term "process" includes not only independent processes, but also processes that are not clearly distinguishable from other processes, as long as their intended function is achieved.

[0011] The power module according to the first embodiment comprises a substrate, a first semiconductor element and a second semiconductor element supported by the substrate, wherein the substrate has an insulating member and a metal member including a first metal part and a second metal part integrated with each other, the first metal part has a semiconductor element mounting region on the opposite side from the insulating member on which the first semiconductor element and the second semiconductor element are mounted, and the second metal part is located in a part of the semiconductor element mounting region and has a central part located at the position of the first semiconductor element when viewed from a direction perpendicular to the semiconductor element mounting region The power module has an extension portion that extends from the position of the first semiconductor element, and the extension portion includes a first extension portion located between the first semiconductor element and the second semiconductor element, and a second extension portion that extends from the position of the first semiconductor element toward the outside of the semiconductor element mounting area, wherein the length of the longest line segment that extends within the second extension portion and connects the first semiconductor element and each position on the outer circumference of the second extension portion by the shortest distance is longer than the length of the longest line segment that extends within the first extension portion and connects the first semiconductor element and each position on the outer circumference of the first extension portion by the shortest distance. In the power module according to the first embodiment, it is sufficient if at least a part of the power module has such a configuration.

[0012] Although heat generated from a semiconductor element is dissipated by diffusing it to various components of the power module via the material in contact with the semiconductor element, when multiple semiconductor elements, such as a first semiconductor element and a second semiconductor element, are mounted in the semiconductor element mounting area, even if the heat generated from the first semiconductor element diffuses toward the second semiconductor element, it may not be sufficiently dissipated due to interference from the heat generated by the second semiconductor element. On the other hand, in the power module according to the first embodiment, the length of the longest line segment extending within the second extension and connecting the first semiconductor element and each position on the outer circumference of the second extension by the shortest distance is longer than the length of the longest line segment extending within the first extension and connecting the first semiconductor element and each position on the outer circumference of the first extension by the shortest distance. In this case, the heat generated from the first semiconductor element diffuses into the second extension, thereby suppressing interference from the heat generated from the second semiconductor element. Furthermore, because the length of the longest line segment extending within the second extension is longer than the length of the longest line segment extending within the first extension, heat can be dissipated to a position far from the first semiconductor element. As described above, the power module according to the first embodiment can efficiently dissipate heat generated from the semiconductor element.

[0013] The power module according to the second embodiment comprises a base material and a semiconductor element supported by the base material, wherein the base material has an insulating member and a metal member including a first metal part and a second metal part integrated with each other, the first metal part has a semiconductor element mounting region on the opposite side from the insulating member on which the semiconductor element is mounted, and the second metal part is located in a part of the semiconductor element mounting region and has a central part located at the position of the semiconductor element when viewed from a direction perpendicular to the semiconductor element mounting region and an extending part extending from the position of the semiconductor element, the length of the line segment extending within the extending part and connecting the semiconductor element and the position on the outer periphery of the extending part on a straight line connecting the position furthest from the semiconductor element among the positions on the outer periphery of the semiconductor element mounting region and the semiconductor element by the shortest distance is longer than the length of the line segment extending within the extending part and connecting the semiconductor element and the position on the outer periphery of the extending part on a straight line connecting the position closest to the semiconductor element among the positions on the outer periphery of the semiconductor element mounting region and the semiconductor element by the shortest distance. In the power module according to the second embodiment, it is sufficient if at least a part of the power module has such a configuration.

[0014] Areas within the semiconductor device mounting region that do not contain semiconductor devices can be utilized to dissipate heat generated by those semiconductor devices. In the power module according to the second embodiment, the length of the line segment extending within the extended portion and connecting the semiconductor element to the position on the outer perimeter of the extended portion, along the shortest distance line connecting the position furthest from the semiconductor element among the positions on the outer perimeter of the semiconductor element mounting area and the semiconductor element, is longer than the length of the line segment extending within the extended portion and connecting the semiconductor element to the position on the outer perimeter of the extended portion, along the shortest distance line connecting the position closest to the semiconductor element among the positions on the outer perimeter of the semiconductor element mounting area and the semiconductor element. In this case, the region between the position furthest from the semiconductor element among the positions on the outer perimeter of the semiconductor element mounting area and the semiconductor element (the region where the semiconductor element is not mounted) can be utilized to dissipate the heat generated from the semiconductor element. As a result, the power module according to the second embodiment can efficiently dissipate the heat generated from the semiconductor element.

[0015] In order to dissipate the heat generated from the semiconductor element, it is conceivable to increase the thickness of the member located between the base material and the semiconductor element, but the thickness of the power module increases. Further, when the thickness of the member located between the base material and the semiconductor element is increased, damage to the member, peeling between the members, etc. may occur due to the temperature difference between the portion on the base material side and the portion on the semiconductor element side in the member located between the base material and the semiconductor element. On the other hand, in the power module according to the present embodiment (the power module according to the first embodiment and the power module according to the second embodiment: the same applies hereinafter), with the above-described configuration, it is possible to efficiently dissipate the heat generated from the semiconductor element while suppressing an increase in the thickness of the member located between the base material and the semiconductor element.

[0016] The power module according to the present embodiment may have the configurations of both the power module according to the first embodiment and the power module according to the second embodiment.

[0017] The power module according to the present embodiment includes a base material. The base material can support the semiconductor element.

[0018] The base material in the power module according to the first embodiment has an insulating member (for example, an insulating layer), and a metal member M11 including a metal part (first metal part: for example, a metal layer) M111 and a metal part (second metal part: for example, a metal layer) M112a that are integrated with each other. From the viewpoint of easily and efficiently dissipating the heat generated from the semiconductor element, the metal member M11 may include another metal part (for example, a metal layer) integrated with the metal part M111, and may include a metal part (for example, a metal layer) M112b integrated with the metal part M111. The thickness of at least one kind selected from the group consisting of the metal part M112a and the metal part M112b may be equal to or greater than the thickness of the metal part M111, may be thicker than the thickness of the metal part M111, may be equal to or less than the thickness of the metal part M111, or may be thinner than the thickness of the metal part M111.

[0019] The metal part M111 has a semiconductor element mounting region (semiconductor element support region) on the opposite side from the insulating member, on which the first semiconductor element and the second semiconductor element are mounted. The metal part M111 is positioned on the side of the insulating member toward the first semiconductor element. The metal part M111 has a portion located between the insulating member and the first semiconductor element. The metal part M111 has a portion located between the insulating member and the metal part M112a. The metal part M111 may have a semiconductor element mounting region on the side of the metal part M111 opposite to the insulating member, or it may have a semiconductor element mounting region on the side of the metal part M111 toward the first semiconductor element. The insulating member and the metal part M111 may be in contact with each other, or they may not be in contact with each other if another member is interposed between the insulating member and the metal part M111.

[0020] The metal parts M112a and M112b are capable of diffusing heat generated from the semiconductor element and can be used as heat conductors. The metal parts M112a and M112b are located in a part of the semiconductor element mounting area. Metal part M112a has a portion located between the first semiconductor element and metal part M111. Metal part M112b has a portion located between the second semiconductor element and metal part M111. When viewed from a direction perpendicular to the semiconductor element mounting area, the area of ​​metal part M111 is larger than the area of ​​metal part M112a, and the portion of metal part M111 that does not overlap with metal part M112a exists in the semiconductor element mounting area. When viewed from a direction perpendicular to the semiconductor element mounting area, the area of ​​metal part M111 is larger than the area of ​​metal part M112b, and the portion of metal part M111 that does not overlap with metal part M112b exists in the semiconductor element mounting area. A step may exist between metal part M111 and metal part M112a, and a step may exist between metal part M111 and metal part M112b.

[0021] The base material in the power module according to the second embodiment includes an insulating member (e.g., an insulating layer) and a metal member M21 including a metal part (first metal part: e.g., a metal layer) M211 and a metal part (second metal part: e.g., a metal layer) M212 which are integrated with each other. The thickness of the metal part M212 may be greater than or equal to the thickness of the metal part M211, may be greater than or equal to the thickness of the metal part M211, may be less than or equal to the thickness of the metal part M211, or may be thinner than the thickness of the metal part M211.

[0022] The metal part M211 has a semiconductor element mounting region (semiconductor element support region) on the side opposite to the insulating member on which the semiconductor element is mounted. The metal part M211 is positioned on the semiconductor element side relative to the insulating member. The metal part M211 has a portion located between the insulating member and the semiconductor element. The metal part M211 has a portion located between the insulating member and the metal part M212. The metal part M211 may have a semiconductor element mounting region on the side opposite to the insulating member, or it may have a semiconductor element mounting region on the side of the metal part M211 that is on the semiconductor element side. The insulating member and the metal part M211 may be in contact with each other, or they may not be in contact with each other if another member is interposed between the insulating member and the metal part M211.

[0023] The metal part M212 can dissipate heat generated from the semiconductor element and can be used as a heat conductor. The metal part M212 is located in a part of the semiconductor element mounting area. The metal part M212 has a portion located between the semiconductor element and the metal part M211. When viewed from a direction perpendicular to the semiconductor element mounting area, the area of ​​the metal part M211 is larger than the area of ​​the metal part M212, and a portion of the metal part M211 that does not overlap with the metal part M212 exists in the semiconductor element mounting area. A step may exist between the metal part M211 and the metal part M212.

[0024] The semiconductor element mounting region is a region for mounting (supporting) semiconductor elements, and is, for example, a continuous region on the same plane (semiconductor element mounting surface: for example, a continuous plane at the same height). In the power module according to the first embodiment, the first semiconductor element is mounted in the semiconductor element mounting region such that at least a metal part M112a is located between the metal part M111 and the first semiconductor element, and the second semiconductor element may be mounted in the semiconductor element mounting region such that at least a metal part M112b is located between the metal part M111 and the second semiconductor element. In the power module according to the second embodiment, the semiconductor element is mounted in the semiconductor element mounting region such that at least a metal part M212 is located between the metal part M211 and the semiconductor element. The direction perpendicular to the semiconductor element mounting region is the direction perpendicular to the plane of the semiconductor element mounting region, and may be the same direction as the thickness direction of the metal member M11 or the metal member M21, and may be the same direction as the stacking direction of the substrate and the semiconductor element.

[0025] Ceramics can be used as the constituent material for insulating materials. Examples of constituent materials for insulating materials include aluminum oxide, aluminum nitride, and silicon nitride.

[0026] The power module according to the first embodiment comprises a first semiconductor element and a second semiconductor element supported on a substrate. The first semiconductor element and the second semiconductor element are mounted in a semiconductor element mounting area. The first semiconductor element and the second semiconductor element may be supported by an integral insulating member (an insulating member of the substrate), or by an integral metal member M11 (a metal member M11 of the substrate). The power module according to the first embodiment may comprise only the first semiconductor element and the second semiconductor element as semiconductor elements mounted in the semiconductor element mounting area (semiconductor elements supported on the substrate), or it may comprise other semiconductor elements in addition to the first semiconductor element and the second semiconductor element.

[0027] The power module according to the second embodiment comprises semiconductor elements supported on a substrate. The semiconductor elements are mounted in a semiconductor element mounting area. In the power module according to the second embodiment, a single semiconductor element may be mounted in the semiconductor element mounting area (a single semiconductor element may be supported on the substrate), or multiple semiconductor elements may be mounted in the semiconductor element mounting area (multiple semiconductor elements may be supported on the substrate).

[0028] In the power module according to this embodiment, the shape, dimensions, and arrangement of the semiconductor elements are not particularly limited.

[0029] The metal portion M112a of the power module according to the first embodiment has, when viewed from a direction perpendicular to the semiconductor element mounting area, a central part (e.g., a main body) located at the position of the first semiconductor element (a position overlapping with the first semiconductor element; the same applies hereinafter), a first extending portion (an extending portion that does not overlap with the first semiconductor element) extending from the position of the first semiconductor element between the first and second semiconductor elements, and a second extending portion (an extending portion that does not overlap with the first semiconductor element) extending from the position of the first semiconductor element toward the outside of the semiconductor element mounting area. The central part is located between the insulating member and the first semiconductor element. The first extending portion is located between the first and second semiconductor elements without reaching the position of the second semiconductor element (a position overlapping with the second semiconductor element; the same applies hereinafter). The first extending portion is located between the first and second semiconductor elements without contacting the metal portion M112b. The second extension extends in a direction in which no semiconductor elements are present in the semiconductor element mounting region. The second extension may or may not reach the outer periphery of the semiconductor element mounting region.

[0030] In the power module according to the first embodiment, when viewed from a direction perpendicular to the semiconductor element mounting area, the first extended portion and the second extended portion are continuous, so that the entire perimeter of the first semiconductor element is surrounded by the first extended portion and the second extended portion, a part of the perimeter of the first semiconductor element is not surrounded by the first extended portion and the second extended portion, and in a part of the perimeter of the first semiconductor element, the first extended portion and the second extended portion do not extend from the position of the first semiconductor element. The shapes of the first extended portion and the second extended portion are not particularly limited. The first extended portion and the second extended portion may each consist of a single part or multiple parts.

[0031] The metal portion M112b of the power module according to the first embodiment may have a central part (e.g., a core) located at the position of the second semiconductor element when viewed from a direction perpendicular to the semiconductor element mounting area, an extending portion A (an extending portion that does not overlap with the second semiconductor element) extending from the position of the second semiconductor element between the first and second semiconductor elements, and an extending portion B (an extending portion that does not overlap with the second semiconductor element) extending from the position of the second semiconductor element toward the outside of the semiconductor element mounting area. The central part is located between the insulating member and the second semiconductor element. The extending portion A is located between the first and second semiconductor elements without reaching the position of the first semiconductor element. The extending portion A is located between the first and second semiconductor elements without contacting the metal portion M112a. The extending portion B extends in a direction in which there are no semiconductor elements mounted in the semiconductor element mounting area. The extending portion B may reach the outer periphery of the semiconductor element mounting area, or it may not reach the outer periphery of the semiconductor element mounting area.

[0032] In the power module according to the first embodiment, when viewed from a direction perpendicular to the semiconductor element mounting area, the extension portion A and the extension portion B are continuous, so that the entire perimeter of the second semiconductor element is surrounded by the extension portion A and the extension portion B, a part of the perimeter of the second semiconductor element is not surrounded by the extension portion A and the extension portion B, and in a part of the perimeter of the second semiconductor element, the extension portion A and the extension portion B do not extend from the position of the second semiconductor element. The shapes of the extension portion A and the extension portion B are not particularly limited. Each of the extension portion A and the extension portion B may consist of a single part or multiple parts.

[0033] The metal portion M212 of the power module according to the second embodiment has a central portion (e.g., a main body) located at the position of the semiconductor element (a position overlapping with the semiconductor element; the same applies hereinafter) when viewed from a direction perpendicular to the semiconductor element mounting area, and an extended portion extending from the position of the semiconductor element (an extended portion that does not overlap with the semiconductor element). The central portion is located between the insulating member and the semiconductor element. The extended portion extends in a direction in which there are no semiconductor elements mounted in the semiconductor element mounting area. The extended portion may or may not reach the outer periphery of the semiconductor element mounting area.

[0034] In the power module according to the second embodiment, when viewed from a direction perpendicular to the semiconductor element mounting area, the extended portion may be continuous, so that the entire perimeter of the semiconductor element is surrounded by the extended portion, a part of the perimeter of the semiconductor element may not be surrounded by the extended portion, and in a part of the perimeter of the semiconductor element, the extended portion may not extend from the position of the semiconductor element. The shape of the extended portion is not particularly limited. The extended portion may consist of a single part or a plurality of parts.

[0035] In the power module according to the first embodiment, the base material may have a metal member (e.g., a metal layer) M12 positioned on the opposite side of the insulating member from the metal member M11. In the power module according to the second embodiment, the base material may have a metal member (e.g., a metal layer) M22 positioned on the opposite side of the insulating member from the metal member M21. The insulating member and the metal members M12 and M22 may be in contact with each other, or they may not be in contact with each other if other members are interposed between the insulating member and the metal members M12 and M22.

[0036] When viewed from a direction perpendicular to the semiconductor element mounting area, the area of ​​the insulating member of the substrate may be larger than the area of ​​at least one selected from the group consisting of the first semiconductor element and the second semiconductor element in the power module according to the first embodiment, may be larger than the area of ​​the semiconductor element in the power module according to the second embodiment, may be larger than the area of ​​at least one selected from the group consisting of metal part M111, metal part M112a and metal part M112b in the power module according to the first embodiment, may be larger than the area of ​​at least one selected from the group consisting of metal part M211 and metal part M212 in the power module according to the second embodiment, may be larger than the area of ​​metal member M12 in the power module according to the first embodiment, may be larger than the area of ​​metal member M22 in the power module according to the second embodiment, may be larger than the area of ​​the plating layer C1 described later, and may be larger than the area of ​​the plating layer C2 described later.

[0037] Examples of metal elements that constitute at least one selected from the group consisting of metal member M11, metal part M111, metal part M112a, metal part M112b, metal member M12, metal member M21, metal part M211, metal part M212, and metal member M22 include copper and aluminum. At least one selected from the group consisting of metal member M11, metal part M111, metal part M112a, metal part M112b, metal member M12, metal member M21, metal part M211, metal part M212, and metal member M22 may contain at least one selected from the group consisting of copper and aluminum, and the first metal part and the second metal part (metal part M111 and metal part M112a, or metal part M211 and metal part M212) may contain at least one selected from the group consisting of copper and aluminum. At least one selected from the group consisting of the central part, the first extension, and the second extension in the metal part M112a may contain at least one selected from the group consisting of copper and aluminum. At least one selected from the group consisting of the central part, extension A, and extension B in the metal part M112b may contain at least one selected from the group consisting of copper and aluminum. At least one selected from the group consisting of the central part and extension in the metal part M212 may contain at least one selected from the group consisting of copper and aluminum.

[0038] In the power module according to the first embodiment, the length of the longest line segment L12 that extends within the second extension and connects the first semiconductor element (the position of the first semiconductor element) and each position on the outer periphery of the second extension by the shortest distance is longer than the length of the longest line segment L11 that extends within the first extension and connects the first semiconductor element (the position of the first semiconductor element) and each position on the outer periphery of the first extension by the shortest distance. In the power module according to the first embodiment, the length of line segment L12 is longer than the length of line segment L11 when viewed from a direction perpendicular to the semiconductor element mounting area. The "outer periphery of the first extension" and the "outer periphery of the second extension" are outer peripheries that do not share a boundary with the first semiconductor element. Line segment L12 extends in a straight line and extends continuously within the second extension (the portion in which the second extension exists). Line segment L11 extends in a straight line and continuously within the first extension (the portion where the first extension exists). If the extension (either the first or second extension) meanders, and a region A1 of the extension extending from the position of the first semiconductor element and a region A2 of the extension adjacent to region A1, separated by a region where no extension is located, exist on a straight line from the position of the first semiconductor element to the outside of the semiconductor element mounting area, then line segments L11 and L12 are line segments extending within the extension from the position of the first semiconductor element, and therefore the line segments extending within region A1 are the ones in question.

[0039] In the power module according to the first embodiment, if the metal part M112b has the extended part A and extended part B described above, from the viewpoint of efficiently dissipating heat generated from the semiconductor element, the length of the longest line segment extending within the extended part B and connecting the second semiconductor element (position of the second semiconductor element) and each position on the outer circumference of the extended part B by the shortest distance may be longer than the length of the longest line segment extending within the extended part A and connecting the second semiconductor element (position of the second semiconductor element) and each position on the outer circumference of the extended part A by the shortest distance.

[0040] In the power module according to the second embodiment, the length of line segment L21, which extends within the extended portion and connects the semiconductor element (position of the semiconductor element) to position P213 on the outer periphery of the extended portion, is longer than the length of line segment L22, which extends within the extended portion and connects the semiconductor element (position of the semiconductor element) to position P223 on the outer periphery of the extended portion, on the straight line La that connects the position P221 closest to the semiconductor element (position of the semiconductor element) to the semiconductor element (position of the semiconductor element) to position P222 on the outer periphery of the semiconductor element, is longer than the length of line segment L22, which extends within the extended portion and connects the semiconductor element (position of the semiconductor element) to position P223 on the outer periphery of the extended portion, on the straight line Lb that connects the position P221 closest to the semiconductor element (position of the semiconductor element) to the semiconductor element (position of the semiconductor element) to position P222 on the outer periphery of the semiconductor element. In the power module according to the second embodiment, the length of line segment L21 is longer than the length of line segment L22 when viewed from a direction perpendicular to the semiconductor element mounting region. Line segments L21 and L22 extend in a straight line and continuously within the extended portion (the area where the extended portion exists). "Position P211, which is the furthest from the semiconductor element among all the positions on the outer perimeter of the semiconductor element mounting area," is the position (on the outer perimeter of the semiconductor element mounting area) that has the longest distance when comparing the shortest distance between each position on the outer perimeter of the semiconductor element mounting area and the semiconductor element. "Position P221, which is the closest to the semiconductor element among all the positions on the outer perimeter of the semiconductor element mounting area," is the position (on the outer perimeter of the semiconductor element mounting area) that has the shortest distance when comparing the shortest distance between each position on the outer perimeter of the semiconductor element mounting area and the semiconductor element. If the extended portion meanders, and on the straight lines La and Lb connecting positions P211 and P221 and the semiconductor element by the shortest distance, there exists a region B1 of the extended portion extending from the position of the semiconductor element and a region B2 of the extended portion adjacent to region B1, separated by a region where the extended portion is not located, then the line segments L21 and L22 are line segments extending within the extended portion from the position of the semiconductor element, and therefore the line segments extending within region B1 are the ones in question.

[0041] The power module according to this embodiment may include other members besides the substrate and semiconductor elements. For example, the power module according to the first embodiment may include a metal member (e.g., a metal layer) M, which is a metal member M131 disposed between the substrate (e.g., a metal member M11 of the substrate) and the first semiconductor element, and a metal member M132 disposed between the substrate (e.g., a metal member M11 of the substrate) and the second semiconductor element. The metal member M131 may be in contact with the substrate, the metal member M11, and the metal part M112a. The metal member M132 may be in contact with the substrate, the metal member M11, and the metal part M112b. The power module according to the second embodiment may include a metal member (e.g., a metal layer) M, which is a metal member M23 disposed between the substrate (e.g., a metal member M21 of the substrate) and the semiconductor element. The metal member M23 may be in contact with the base material, may be in contact with the metal member M21, or may be in contact with the metal part M212.

[0042] At least one of the metal members selected from the group consisting of metal members M131, M132, and M23 may be a porous metal member. The at least one metal material selected from the group consisting of metal members M131, M132, and M23 may be a single metal, a metal alloy, or a metal compound. Examples of metal elements constituting the at least one selected from the group consisting of metal members M131, M132, and M23 include copper, silver, gold, titanium, nickel, silicon, palladium, and aluminum. At least one of the metal members selected from the group consisting of metal members M131, M132, and M23 may be a sintered body containing a metal (metal element). Examples of metals (metal elements) in such a sintered body include copper and silver. The sintered body may be a porous metal member. At least one of the metal members selected from the group consisting of metal member M131, metal member M132, and metal member M23 may contain at least one metal element selected from the group consisting of copper and silver, from the viewpoint of efficiently dissipating heat generated from the semiconductor device. The porosity of metal member M131 may be greater than that of metal member M11, greater than that of metal part M111, and greater than that of metal part M112a. The density of metal member M131 may be lower than that of metal member M11, greater than that of metal part M111, and greater than that of metal part M112a. The porosity of metal member M132 may be greater than that of metal member M11, greater than that of metal part M111, and greater than that of metal part M112b. The density of metal member M132 may be lower than the density of metal member M11, lower than the density of metal part M111, and lower than the density of metal part M112b. The porosity of metal member M23 may be greater than the porosity of metal member M21, higher than the porosity of metal part M211, and higher than the porosity of metal part M212. The density of metal member M23 may be lower than the density of metal member M21, lower than the density of metal part M211, and lower than the density of metal part M212.

[0043] The power module according to this embodiment may include a plating layer C1 that is disposed between a first semiconductor element and a metal member M131, a plating layer that is in contact with the first semiconductor element and the metal member M131 between the first semiconductor element and the metal member M131, a plating layer that is disposed between a second semiconductor element and a metal member M132, a plating layer that is in contact with the second semiconductor element and the metal member M132 between the second semiconductor element and the metal member M132, a plating layer that is disposed between a semiconductor element and a metal member M23, and a plating layer that is in contact with the semiconductor element and the metal member M23 between the semiconductor element and the metal member M23. The porosity of the plating layer C1 may be smaller than the porosity of at least one selected from the group consisting of metal member M131, metal member M132, and metal member M23. The density of the plating layer C1 may be higher than the density of at least one selected from the group consisting of metal member M131, metal member M132, and metal member M23.

[0044] The power module according to this embodiment may include a plating layer C2 that is located on the opposite side of the metal member M11 to the first semiconductor element, a plating layer that is in contact with the first semiconductor element on the opposite side of the metal member M11 to the first semiconductor element, a plating layer that is located on the opposite side of the metal member M11 to the second semiconductor element, a plating layer that is in contact with the second semiconductor element on the opposite side of the metal member M11 to the second semiconductor element, a plating layer that is located on the opposite side of the metal member M21 to the semiconductor element, and a plating layer that is in contact with the semiconductor element on the opposite side of the metal member M21 to the semiconductor element.

[0045] Examples of metallic elements that make up at least one selected from the group consisting of plating layer C1 and plating layer C2 include copper, silver, gold, titanium, nickel, silicon, palladium, and aluminum. From the viewpoint of obtaining good adhesion, at least one selected from the group consisting of copper and silver may be included.

[0046] The power module according to the first embodiment may be provided with a heat dissipation member on the side of the substrate opposite to the first semiconductor element. The power module according to the second embodiment may be provided with a heat dissipation member on the side of the substrate opposite to the semiconductor element. Examples of heat dissipation members include heat sinks. In other words, the heat dissipation member may include a heat sink.

[0047] Figure 1 is a schematic plan view showing an example of a power module, illustrating an example of a power module according to the first embodiment. Figure 2 is a schematic cross-sectional view along the line II-II in Figure 1.

[0048] The power module 100 in Figures 1 and 2 comprises a base material 110, semiconductor elements 120a, 120b, and 120c (semiconductor elements 120a and 120b correspond to the first and second semiconductor elements described above), and metal members M131, M132, and M133.

[0049] The base material 110 supports the semiconductor elements 120a, 120b, and 120c. The base material 110 includes an insulating member 112, a metal member M11, and a metal member M12. The metal member M11 includes a metal part M111 and metal parts M112a, M112b, and M112c which are integrated with each other. The metal part M111 is positioned on one side of the insulating member 112 (the side facing the semiconductor elements 120a, 120b, and 120c) on the semiconductor element 120a side relative to the insulating member 112. The metal part M111 has a semiconductor element mounting region R on one side opposite to the insulating member 112 (the side facing the semiconductor elements 120a, 120b, and 120c) on which the semiconductor elements 120a, 120b, and 120c are mounted. The semiconductor element mounting region R on one side of the metal part M111 is a continuous, coplanar region. The metal parts M112a, M112b, and M112c are positioned on the opposite side of the insulating member 112 to the metal part M111 and are located in a part of the semiconductor element mounting region R. The metal part M112a has a portion located between the semiconductor element 120a and the metal part M111. The metal part M112b has a portion located between the semiconductor element 120b and the metal part M111. The metal part M112c has a portion located between the semiconductor element 120c and the metal part M111. The metal member M12 is positioned on the opposite side of the insulating member 112 to the semiconductor element 120a, on the other side of the insulating member 112 (the side opposite to the semiconductor elements 120a, 120b, and 120c), and is positioned on the opposite side of the insulating member 112 to the metal member M11. When viewed from a direction perpendicular to the semiconductor element mounting region R, the insulating member 112, metal part M111, metal parts M112a, M112b, M112c, metal member M12, and semiconductor element mounting region R have a rectangular shape. When viewed from a direction perpendicular to the semiconductor element mounting region R, the semiconductor elements 120a, 120b, and 120c are located in the center of the metal parts M112a, M112b, and M112c. When viewed from a direction perpendicular to the semiconductor element mounting region R, the area of ​​the insulating member 112 is larger than the area of ​​the metal parts M111, metal parts M112a, M112b, M112c, metal member M12, metal members M131, M132, M133, and semiconductor elements 120a, 120b, and 120c.

[0050] The semiconductor elements 120a, 120b, and 120c are arranged in a line within the semiconductor element mounting region R, with semiconductor element 120b positioned between semiconductor elements 120a and 120c. When viewed from a direction perpendicular to the semiconductor element mounting region R, the semiconductor elements 120a, 120b, and 120c have a rectangular shape, and the edges of semiconductor elements 120a, 120b, and 120c that face the outer perimeter of the semiconductor element mounting region R extend parallel to the edges that demarcate the semiconductor element mounting region R. The semiconductor elements 120a, 120b, and 120c are adjacent to each other such that the edges of semiconductor elements 120a, 120b, and 120c face each other parallel to one another.

[0051] The metal portion M112a has a central part (main section) A111 located at the position of the semiconductor element 120a when viewed from a direction perpendicular to the semiconductor element mounting area R, a rectangular extension A112 (the first extension described above) extending from the position of semiconductor element 120a between semiconductor elements 120a and 120b, and an extension A113 (the second extension described above) extending from the position of semiconductor element 120a toward the outside of the semiconductor element mounting area R. The extensions A112 and A113 are continuous, so that the entire perimeter of the semiconductor element 120a is surrounded by the extensions A112 and A113.

[0052] The metal portion M112b has, when viewed from a direction perpendicular to the semiconductor element mounting area R, a central part (main body) A121 located at the position of semiconductor element 120b, a rectangular extension A122 (extension A as described above) extending from the position of semiconductor element 120b between semiconductor elements 120a and 120b, an extension A123 (extension B as described above) extending from the position of semiconductor element 120b toward the outside of the semiconductor element mounting area R, and a rectangular extension A124 extending from the position of semiconductor element 120b between semiconductor elements 120b and 120c. The extensions A122, A123, and A124 are continuous, so that the entire periphery of semiconductor element 120b is surrounded by the extensions A122, A123, and A124.

[0053] The metal members M131, M132, and M133 have a rectangular shape when viewed from a direction perpendicular to the semiconductor element mounting area R, and have an area equivalent to that of the semiconductor elements 120a, 120b, and 120c. The metal members M131, M132, and M133 are positioned between the base material 110 and the semiconductor elements 120a, 120b, and 120c, and are in contact with the base material 110 (metal parts M112a, M112b, and M112c of the base material 110) and the semiconductor elements 120a, 120b, and 120c. The metal members M131, M132, and M133 are positioned in the semiconductor element mounting area R.

[0054] In the metal part M112a of the power module 100, the longest line segment L11, which extends within the extension A112 and connects the semiconductor element 120a and each position on the outer circumference of the extension A112 by the shortest distance, connects position P111 on one side constituting the semiconductor element 120a and position P112 on one side constituting the extension A112 (the line segment L11 extends in the direction of the arrangement of semiconductor elements 120a and 120b). The longest line segment L12, which extends within the extension A113 and connects the semiconductor element 120a and each position on the outer circumference of the extension A113 by the shortest distance, connects position P121 at the vertex of the semiconductor element 120a and position P122 at the vertex of the extension A113. In the power module 100, the length of line segment L12 is longer than the length of line segment L11. In this case, while suppressing thermal interference from the semiconductor element 120b, the heat generated from the semiconductor element 120a can be dissipated to position P122, which is far from the semiconductor element 120a, thus enabling efficient heat dissipation from the semiconductor element 120a.

[0055] In the metal part M112b of the power module 100, the longest line segment L13, which extends within the extension A122 and connects the semiconductor element 120b with each position on the outer circumference of the extension A122 by the shortest distance, connects position P131 on one side of the semiconductor element 120b with position P132 on one side of the extension A122 (line segment L13 extends in the direction of the arrangement of semiconductor elements 120a and 120b). The longest line segment L14, which extends within the extension A123 and connects the semiconductor element 120b with each position on the outer circumference of the extension A123 by the shortest distance, connects position P141 at the vertex of the semiconductor element 120b with position P142 at the vertex of the extension A123. In the power module 100, the length of line segment L14 is longer than the length of line segment L13. In this case, while suppressing thermal interference from the semiconductor element 120a, the heat generated from the semiconductor element 120b can be dissipated to a position P142 away from the semiconductor element 120b, thus enabling efficient heat dissipation from the semiconductor element 120b.

[0056] In the power module 100, the relative relationship between the semiconductor element 120c and the metal part M112c is the same as the relative relationship between the semiconductor element 120a and the metal part M112a. This allows heat generated from the semiconductor element 120c to be dissipated to a position away from the semiconductor element 120c while suppressing interference from heat generated from the semiconductor element 120b, thus enabling efficient heat dissipation from the semiconductor element 120c.

[0057] Figure 3 is a schematic plan view showing another example of a power module, illustrating another example of a power module according to the first embodiment.

[0058] The power modules 100A, 100B, and 100C in Figures 3(a) to 3(c) have the same configuration as the power module 100 in Figures 1 and 2, except that the shape of the extended portion of the metal parts corresponding to the metal parts M112a, M112b, and M112c is different. Power module 100A in Figure 3(a) is equipped with metal parts M112d, M112e, and M112f, which correspond to the metal parts M112a, M112b, and M112c of power module 100. Power module 100B in Figure 3(b) is equipped with metal parts M112g, M112h, and M112i, which correspond to the metal parts M112a, M112b, and M112c of power module 100. The power module 100C in Figure 3(c) includes metal parts M112j and M112k, which correspond to the metal parts M112a and M112c of the power module 100. Hereinafter, the arrangement direction of the semiconductor elements 120a and 120b will simply be referred to as the "arrangement direction of the semiconductor elements".

[0059] Each of the metal parts M112d, M112e, and M112f in the power module 100A in Figure 3(a) has a central part located at the positions of semiconductor elements 120a, 120b, and 120c when viewed from a direction perpendicular to the semiconductor element mounting area R, and an extended part that extends from the positions of semiconductor elements 120a, 120b, and 120c. The extended part includes a rectangular annular first part that surrounds the entire perimeter of each of the semiconductor elements 120a, 120b, and 120c, and six rectangular second parts that extend from the first part in a direction perpendicular to the arrangement direction of the semiconductor elements. The second part includes a pair of parts that extend from the first part in opposite directions, flanking the center of the semiconductor elements 120a, 120b, and 120c, and two pairs of parts that extend from the first part in opposite directions, flanking the first part, at both ends of the semiconductor element arrangement direction in the first part. The second portion extends from the first portion without reaching the outer periphery of the semiconductor element mounting region R. In the metal portion M112d, a part of the first portion constitutes a rectangular first extension portion that extends from the position of semiconductor element 120a between semiconductor elements 120a and 120b, and the remainder of the first portion and the second portion constitute a second extension portion that extends from the position of semiconductor element 120a toward the outside of the semiconductor element mounting region R.

[0060] In the metal part M112d of the power module 100A, the longest line segment L11, which extends within the first extension and connects the semiconductor element 120a and each position on the outer circumference of the first extension by the shortest distance, connects position P111 on one side constituting the semiconductor element 120a and position P112 on one side constituting the first extension (the line segment L11 extends in the direction of the arrangement of the semiconductor elements). The longest line segment L12, which extends within the second extension and connects the semiconductor element 120a and each position on the outer circumference of the second extension by the shortest distance, connects position P121 on the vertex of the semiconductor element 120a and position P122 on the vertex of the second part of the metal part M112d that is closest to the vertex on the outer circumference of the semiconductor element mounting region R. In the power module 100A, the length of line segment L12 is longer than the length of line segment L11. In this case, while suppressing thermal interference from semiconductor element 120b, the heat generated from semiconductor element 120a can be dissipated to position P122, which is away from semiconductor element 120a, thus enabling efficient heat dissipation from semiconductor element 120a. Similar to the metal parts M112b and M112c in power module 100 in Figures 1 and 2, the metal parts M112e and M112f of power module 100A enable efficient heat dissipation from semiconductor elements 120b and 120c.

[0061] In the power module 100B shown in Figure 3(b), each of the metal parts M112g, M112h, and M112i has a central part located at the positions of semiconductor elements 120a, 120b, and 120c when viewed from a direction perpendicular to the semiconductor element mounting area R, and an extended part that extends from the positions of semiconductor elements 120a, 120b, and 120c. The extended part surrounds the entire perimeter of each of the semiconductor elements 120a, 120b, and 120c and has an elongated elliptical outer circumference perpendicular to the semiconductor element arrangement direction. The extended parts of the metal parts M112g, M112h, and M112i extend in the direction of the semiconductor element arrangement direction (the minor axis direction of the elliptical shape of the extended part) without being continuous with each other, and extend to a position between the semiconductor elements 120a, 120b, and 120c and the outer circumference of the semiconductor element mounting area R in the direction perpendicular to the semiconductor element arrangement direction (the major axis direction of the elliptical shape of the extended part). In the metal portion M112g, a portion of the extended portion constitutes a first extended portion that extends from the position of semiconductor element 120a between semiconductor elements 120a and 120b, and the remaining portion of the extended portion constitutes a second extended portion that extends from the position of semiconductor element 120a toward the outside of the semiconductor element mounting region R.

[0062] In the metal part M112g of the power module 100B, the longest line segment L11, which extends within the first extension and connects the semiconductor element 120a and each position on the outer circumference of the first extension by the shortest distance, connects position P111 on one side constituting the semiconductor element 120a and position P112 on the minor axis of the elliptical shape of the extension on the outer circumference of the first extension (line segment L11 extends in the direction of the arrangement of the semiconductor elements). The longest line segment L12, which extends within the second extension and connects the semiconductor element 120a and each position on the outer circumference of the second extension by the shortest distance, connects position P121 on one side constituting the semiconductor element 120a and position P122 on the major axis of the elliptical shape of the extension on the outer circumference of the second extension (line segment L12 extends in a direction perpendicular to the direction of the arrangement of the semiconductor elements). In power module 100B, the length of line segment L12 is longer than the length of line segment L11. In this case, while suppressing interference from heat generated from semiconductor element 120b, heat generated from semiconductor element 120a can be dissipated to position P122 away from semiconductor element 120a, thus efficiently dissipating heat generated from semiconductor element 120a. Similar to the metal parts M112b and M112c in power module 100 in Figures 1 and 2, the metal parts M112h and M112i of power module 100B allow for efficient dissipation of heat generated from semiconductor elements 120b and 120c.

[0063] The metal part M112j in the power module 100C shown in Figure 3(c) has, when viewed from a direction perpendicular to the semiconductor element mounting area R, a central part located at the position of semiconductor element 120a, a rectangular first extension extending in the direction of the semiconductor element arrangement from the position of semiconductor element 120a toward the position of semiconductor element 120b, and a rectangular second extension extending in the direction of the semiconductor element arrangement from the position of semiconductor element 120a to the outer periphery of the semiconductor element mounting area R. The first extension of the metal part M112j extends from the position of semiconductor element 120a between semiconductor element 120a and semiconductor element 120b without reaching the position of semiconductor element 120b. The metal part M112k in the power module 100C has, when viewed from a direction perpendicular to the semiconductor element mounting area R, a central part located at the position of semiconductor element 120c, a rectangular first extension extending from the position of semiconductor element 120c toward the position of semiconductor element 120b in the direction of the semiconductor element arrangement, and a rectangular second extension extending from the position of semiconductor element 120c toward the outer periphery of the semiconductor element mounting area R in the direction of the semiconductor element arrangement. The first extension of the metal part M112k extends from the position of semiconductor element 120c between semiconductor element 120b and semiconductor element 120c without reaching the position of semiconductor element 120b. The power module 100C has a metal part (not shown) between the metal part M111 and the metal member M132 without having an extension extending from the position of semiconductor element 120b when viewed from a direction perpendicular to the semiconductor element mounting area R.

[0064] In the metal part M112j of the power module 100C, the longest line segment L11, which extends within the first extension and connects the semiconductor element 120a and each position on the outer periphery of the first extension by the shortest distance, connects position P111 on one side constituting the semiconductor element 120a and position P112 on one side constituting the first extension (line segment L11 extends in the direction of the semiconductor element arrangement). The longest line segment L12, which extends within the second extension and connects the semiconductor element 120a and each position on the outer periphery of the second extension by the shortest distance, connects position P121 on one side constituting the semiconductor element 120a and position P122 on the outer periphery of the semiconductor element mounting area R (line segment L12 extends in the direction of the semiconductor element arrangement). In the power module 100C, the length of line segment L12 is longer than the length of line segment L11. In this case, while suppressing thermal interference from the semiconductor element 120b, the heat generated from the semiconductor element 120a can be dissipated to a position P122 away from the semiconductor element 120a, thus efficiently dissipating the heat generated from the semiconductor element 120a. Similar to the metal part M112c in the power module 100 in Figures 1 and 2, the metal part M112k of the power module 100C allows for efficient dissipation of heat generated from the semiconductor element 120c.

[0065] Figure 4 is a schematic plan view showing another example of a power module, illustrating an example of a power module according to the second embodiment. Figure 5 is a schematic cross-sectional view along the VV line in Figure 4.

[0066] The power module 200 in Figures 4 and 5 comprises a base material 210, a semiconductor element 220, and a metal member M23.

[0067] The base material 210 supports the semiconductor element 220. The base material 210 includes an insulating member 212, a metal member M21, and a metal member M22. The metal member M21 includes a metal part M211 and a metal part M212 that are integrated with each other. The metal part M211 is located on one side of the insulating member 212 (the side facing the semiconductor element 220) on the semiconductor element 220 side relative to the insulating member 212. The metal part M211 has a semiconductor element mounting region R on one side opposite to the insulating member 212 (the side facing the semiconductor element 220), on which the semiconductor element 220 is mounted. The semiconductor element mounting region R on one side of the metal part M211 is a continuous, coplanar region. The metal part M212 is located on the opposite side of the insulating member 212 relative to the metal part M211 and is located in a part of the semiconductor element mounting region R. The metal part M212 has a portion located between the semiconductor element 220 and the metal part M211. The metal member M22 is positioned on the opposite side of the insulating member 212 from the semiconductor element 220, and on the opposite side of the insulating member 212 from the metal member M21. When viewed from a direction perpendicular to the semiconductor element mounting area R, the insulating member 212, metal part M211, metal part M212, metal member M22, and semiconductor element mounting area R have a rectangular shape. When viewed from a direction perpendicular to the semiconductor element mounting area R, the semiconductor element 220 is located in the center of the metal part M212. When viewed from a direction perpendicular to the semiconductor element mounting area R, the area of ​​the insulating member 212 is larger than the area of ​​the metal part M211, metal part M212, metal member M22, metal member M23, and semiconductor element 220.

[0068] The power module 200 includes a semiconductor element 220 as a single semiconductor element. The semiconductor element 220 is positioned in the center of the semiconductor element mounting area R. When viewed from a direction perpendicular to the semiconductor element mounting area R, the semiconductor element 220 has a rectangular shape, and the edges of the semiconductor element 220 that face the outer perimeter of the semiconductor element mounting area R extend parallel to the edges that demarcate the semiconductor element mounting area R.

[0069] The metal portion M212 has a central portion (main body) A21 located at the position of the semiconductor element 220 when viewed from a direction perpendicular to the semiconductor element mounting region R, and an extended portion A22 that extends from the position of the semiconductor element 220. The extension portion A22 is continuous, so that the entire periphery of the semiconductor element 220 is surrounded by the extension portion A22.

[0070] The metal member M23 has a rectangular shape when viewed from a direction perpendicular to the semiconductor element mounting area R, and has an area equivalent to that of the semiconductor element 220. The metal member M23 is positioned between the base material 210 and the semiconductor element 220, and is in contact with the base material 210 (the metal part M212 of the base material 210) and the semiconductor element 220. The metal member M23 is positioned in the semiconductor element mounting area R.

[0071] In the power module 200, position P211 is the position furthest from the semiconductor element 220 among all the positions on the outer perimeter of the semiconductor element mounting region R. Line La is the straight line that connects position P211 and the semiconductor element 220 (position P212 of the semiconductor element 220) by the shortest distance. Line segment L21 is a line segment that extends within the extension A22 on line La and connects the semiconductor element 220 (position P212 of the semiconductor element 220) and position P213 on the outer perimeter of the extension A22. Position P221 is the position closest to the semiconductor element 220 among all the positions on the outer perimeter of the semiconductor element mounting region R. Line Lb is the straight line that connects position P221 and the semiconductor element 220 (position P222 of the semiconductor element 220) by the shortest distance. The line segment L22 extends along the straight line Lb within the extension A22 and connects the semiconductor element 220 (position P222 of the semiconductor element 220) to position P223 on the outer periphery of the extension A22. In the power module 200, the length of line segment L21 is longer than the length of line segment L22. In this case, in order to dissipate the heat generated from the semiconductor element 220, the region between the semiconductor element 220 and the position P211, which is the furthest point from the semiconductor element 220 among the positions on the outer periphery of the semiconductor element mounting region R (the region where the semiconductor element is not mounted) can be utilized. As a result, the power module 200 can efficiently dissipate the heat generated from the semiconductor element 220.

[0072] Figure 6 is a schematic plan view showing another example of a power module, illustrating another example of a power module according to the second embodiment.

[0073] The power modules 200A and 200B in Figures 6(a) and 6(b) have the same configuration as the power module 200 in Figures 4 and 5, except that the shape of the extended portion of the metal part corresponding to the metal part M212 is different. Power module 200A in Figure 6(a) is equipped with a metal part M212a corresponding to the metal part M212 of power module 200. Power module 200B in Figure 6(b) is equipped with a metal part M212b corresponding to the metal part M212 of power module 200.

[0074] The metal part M212a in the power module 200A shown in Figure 6(a) has a central part located at the position of the semiconductor element 220 when viewed from a direction perpendicular to the semiconductor element mounting area R, and an extended part that extends from the position of the semiconductor element 220. The extended part includes a rectangular annular first part that surrounds the entire perimeter of the semiconductor element 220, and six rectangular second parts that extend from the first part in the direction of extension of a pair of opposing sides that constitute the rectangular semiconductor element 220. The second part includes a pair of parts that extend from the first part in opposite directions across the center of the semiconductor element 220, and two pairs of parts that extend from both ends of the first part in opposite directions across the region between the semiconductor element 220 and the outer periphery of the semiconductor element mounting area R. The second part extends from the first part without reaching the outer periphery of the semiconductor element mounting area R.

[0075] The metal portion M212b in the power module 200B shown in Figure 6(b) has a central part located at the position of the semiconductor element 220 when viewed from a direction perpendicular to the semiconductor element mounting area R, and an extended portion that extends from the position of the semiconductor element 220. The extended portion includes a rectangular annular first portion that surrounds the entire periphery of the semiconductor element 220, and four second portions that extend from the first portion in each of the diagonal directions of the rectangular semiconductor element 220. The second portions extend from the first portion without reaching the outer periphery of the semiconductor element mounting area R.

[0076] In power modules 200A and 200B, position P211 is the position furthest from semiconductor element 220 among all positions on the outer perimeter of the semiconductor element mounting region R. Line La is the straight line connecting position P211 and semiconductor element 220 (position P212 of semiconductor element 220) by the shortest distance. Line segment L21 is a line segment that extends within the extended portions of metal parts M212a and M212b on line La and connects semiconductor element 220 (position P212 of semiconductor element 220) and position P213 on the outer perimeter of the extended portion. Position P221 is the position closest to semiconductor element 220 among all positions on the outer perimeter of the semiconductor element mounting region R. Line Lb is the straight line connecting position P221 and semiconductor element 220 (position P222 of semiconductor element 220) by the shortest distance. The line segment L22 extends along the straight line Lb through the extended portions of the metal parts M212a and M212b, connecting the semiconductor element 220 (position P222 of the semiconductor element 220) to position P223 on the outer periphery of the extended portion. In power modules 200A and 200B, the length of line segment L21 is longer than the length of line segment L22. In this case, to dissipate the heat generated from the semiconductor element 220, the region between the semiconductor element 220 and the position P211, which is the furthest point from the semiconductor element 220 among the positions on the outer periphery of the semiconductor element mounting region R (the region where the semiconductor element is not mounted) can be utilized. As a result, power modules 200A and 200B can efficiently dissipate the heat generated from the semiconductor element 220. [Explanation of Symbols]

[0077] 100, 100A, 100B, 100C, 200, 200A, 200B… Power module, 110, 210… Base material, 112, 212… Insulating material, 120a, 120b, 120c, 220… Semiconductor element, A111, A121, A21… Center part, A112, A113, A122, A123, A124, A22… Extended part, L11, L12, L13, L14, L21, L22… Line segment, La, Lb… Straight line, M11, M12, M131, M132, M133 ,M21,M22,M23...Metal parts, M111,M112a,M112b,M112c,M112d,M112e,M112f,M112g,M112h,M112i,M112j,M112k,M211,M212,M 212a,M212b...Metal part, P111,P112,P121,P122,P131,P132,P141,P142,P211,P212,P213,P221,P222,P223...Position, R...Semiconductor element mounting area.

Claims

1. The device comprises a substrate, a first semiconductor element and a second semiconductor element supported on the substrate, The substrate comprises an insulating member and a metal member including a first metal part and a second metal part integrated with each other. The first metal portion has a semiconductor element mounting region on which the first semiconductor element and the second semiconductor element are mounted on the side opposite to the insulating member, The second metal portion is located in a part of the semiconductor element mounting area and, when viewed from a direction perpendicular to the semiconductor element mounting area, has a central portion located at the position of the first semiconductor element and an extended portion extending from the position of the first semiconductor element. The extension portion includes a first extension portion located between the first semiconductor element and the second semiconductor element, and a second extension portion extending from the position of the first semiconductor element toward the outside of the semiconductor element mounting area. A power module in which the length of the longest line segment extending within the second extension and connecting the first semiconductor element and each position on the outer circumference of the second extension by the shortest distance is longer than the length of the longest line segment extending within the first extension and connecting the first semiconductor element and each position on the outer circumference of the first extension by the shortest distance.

2. The device comprises a substrate and a semiconductor element supported on the substrate, The substrate comprises an insulating member and a metal member including a first metal part and a second metal part integrated with each other. The first metal portion has a semiconductor element mounting region on which the semiconductor element is mounted on the side opposite to the insulating member, The second metal portion is located in a part of the semiconductor element mounting area and, when viewed from a direction perpendicular to the semiconductor element mounting area, has a central portion located at the position of the semiconductor element and an extended portion extending from the position of the semiconductor element. A power module in which the length of a line segment extending within the extended portion and connecting the semiconductor element and a position on the outer perimeter of the extended portion, on a straight line connecting the position furthest from the semiconductor element among the positions on the outer perimeter of the semiconductor element mounting area with the semiconductor element by the shortest distance, is longer than the length of a line segment extending within the extended portion and connecting the semiconductor element and a position on the outer perimeter of the extended portion, on a straight line connecting the position closest to the semiconductor element among the positions on the outer perimeter of the semiconductor element mounting area with the semiconductor element by the shortest distance,

3. The power module according to claim 2, wherein a single semiconductor element is mounted in the semiconductor element mounting region.

4. The power module according to claim 2, wherein a plurality of the semiconductor elements are mounted in the semiconductor element mounting region.

5. The power module according to claim 1, further comprising a metal member M disposed between the substrate and the first semiconductor element.

6. The power module according to claim 2, further comprising a metal member M disposed between the substrate and the semiconductor element.

7. The power module according to claim 5 or 6, wherein the metal member M contains at least one selected from the group consisting of copper and silver.

8. The power module according to any one of claims 1 to 6, wherein the first metal part and the second metal part contain at least one selected from the group consisting of copper and aluminum.

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