Overcurrent protection integrated circuit device

Abstract

In an overcurrent protection integrated circuit that combines a resistor made of metal wiring resistors with a semiconductor integrated circuit, manufacturing errors are absorbed in each overcurrent protection integrated circuit, and the temperature characteristics of the metal wiring resistors are not deviated in each overcurrent protection integrated circuit. [Solution] The first resistor 7 of the current input section 2 and the second resistor 12 of the current sense amplifier section 3 are made of the same metal material.

Description

Technical Field

[0001] The present invention relates to an overcurrent protection integrated circuit device connected to a DC power supply with a constant voltage.

Background Art

[0002] Conventionally, in an integrated circuit device manufactured as a semiconductor chip, in a semiconductor circuit, there is one that constitutes a current detection circuit using a resistor for current detection. And the resistor for current detection has a problem that its resistance value changes as the temperature of the integrated circuit device rises, and a device has been proposed to prevent the change in the resistance value along with the temperature change from having an impact on other things.

[0003] For example, in Patent Document 1, a metal wiring made of a metal material is arranged in a part of a semiconductor integrated circuit, and a current detection part is provided using this metal wiring. This metal wiring is also called a metal wire, and in a semiconductor integrated circuit, it is electrically connected by wiring between devices. For the wiring, aluminum, copper, gold, etc., which are metal materials with high conductivity, are used.

[0004] Generally, there is no big difference between the two of metal wiring and metal wire, and they have the same meaning. However, since metal wiring is more widely used, the explanation will be made using the term metal wiring.

[0005] In Patent Document 1, a device is shown to cancel out the variation in the detected current value due to temperature change by matching the temperature characteristics of the current detection resistance by the metal wiring in the current detection part and the temperature characteristics of the voltage control circuit.

[0006] Patent Document 2 relates to an overcurrent protection device for MOS transistors. Patent Document 2 shows that, regarding the ON resistance of the MOS transistor, by appropriately setting the R1 / R2 ratio between the resistor R1 connected to the comparator and the resistor R2 connected to the operational amplifier, the effects caused by temperature changes are reduced, thereby canceling out fluctuations in the detected current value due to temperature changes.

[0007] Patent Document 3 relates to a power supply device and electronic equipment using the same. Patent Document 3 shows a configuration in which the effect of temperature rise is canceled out by a decrease in the current of a metal resistor used as a current detection resistor connected to a current detection comparator, and a decrease in the current of a transistor connected to the metal resistor due to the increase in the resistance value of the metal resistor as the temperature rises of the metal resistor. [Prior art documents] [Patent Documents]

[0008] [Patent Document 1] Patent No. 3239052 [Patent Document 2] Japanese Patent Publication No. 2002-026707 [Patent Document 3] Japanese Patent Publication No. 2007-236126 [Overview of the project] [Problems that the invention aims to solve]

[0009] The technology described in Patent Document 1 attempts to match the temperature characteristics of a current sensing resistor formed from metal wiring with the temperature characteristics of a voltage control circuit. However, since manufacturing tolerances occur in both the metal wiring and the voltage control circuit, there is a problem in that the discrepancies in temperature characteristics due to manufacturing tolerances cannot be canceled out.

[0010] The technique described in Patent Document 2 for an overcurrent protection device, which involves setting the ratio R1 / R2 between a resistor R1 connected to a comparator in the circuit and a resistor R2 connected to an operational amplifier to cancel out fluctuations in the current value due to temperature changes, has the problem that manufacturing tolerances occur in both resistors R1 and R2, and therefore the deviation in temperature characteristics due to manufacturing tolerances cannot be canceled out.

[0011] In the power supply device and electronic equipment using the same described in Patent Document 3, there is a problem in that manufacturing errors occur in both the metal resistor and the circuit combining the metal resistors, making it impossible to cancel out the deviation in temperature characteristics due to manufacturing errors.

[0012] In view of the above circumstances, the present invention aims to provide an overcurrent protection integrated circuit that is not affected by manufacturing errors and can cancel out temperature characteristics. [Means for solving the problem]

[0013] This invention was made in consideration of the above problems. An overcurrent protection integrated circuit device comprising a current input section, a current sense amplifier section, and an overcurrent detection section, and connected to a constant voltage DC power supply, The current input section has a first resistor that receives the input current. The current sense amplifier section comprises a differential amplifier, a switching element, a second resistor, and a current mirror circuit. The overcurrent detection unit comprises a third resistor and an overcurrent protection comparator. The differential amplifier has a pair of input and output sections, one of the input sections is connected to the current output side of the current input section, and the other of the input section is connected to the second resistor. The switch element is connected to the second resistor and the output section. The current mirror circuit has a pair of active elements, one of which is a current mirror circuit. The other active element is connected to the output section, and the other active element is connected to the third resistor. The overcurrent protection comparator has a pair of determination input units, one of which is connected to the other active element, and the other determination input unit is connected to the DC power supply. The current sense amplifier section controls the voltage of the second resistor using the differential amplifier so that the voltage across the first resistor and the voltage across the second resistor are the same, and sends a current from the switch element to the current mirror circuit side that is reduced to a predetermined ratio from the input current. The overcurrent detection unit compares the voltage across the third resistor with the voltage of the DC power supply, and outputs a signal when the voltage across the third resistor exceeds the voltage of the DC power supply. The above problem is solved by providing an overcurrent protection integrated circuit device characterized in that the first resistor and the second resistor are made of the same metallic material.

[0014] Furthermore, in the present invention, the metal material is preferably aluminum or an aluminum-based alloy.

[0015] Furthermore, in the present invention, the overcurrent protection integrated circuit device is a semiconductor chip in which a plurality of semiconductor circuit formation layers are stacked, The semiconductor circuit formation layer on which the second resistor is provided is a different layer from the semiconductor circuit formation layer on which the first resistor is provided. It is preferable that the first resistor and the second resistor are arranged so that they overlap vertically in the thickness direction of the semiconductor circuit formation layer, or so that they are in close proximity in the plane direction of the semiconductor circuit formation layer.

[0016] Furthermore, in the present invention, it is preferable that the shape of the second resistor be a straight line.

[0017] Furthermore, in the present invention, it is preferable that the second resistor is provided only in a single semiconductor circuit formation layer.

[0018] Also, in the present invention, the second resistor is formed to extend in the longitudinal direction, and a linear metal wiring made of the same metal material as the second resistor is disposed in the vicinity of a side edge along the longitudinal direction. It is preferable that the metal wiring is a dummy pattern. [Effect of the Invention]

[0019] According to the present invention, the first resistor of the current input section and the second resistor of the current sense amplifier section are made of the same metal material as the forming material, and no manufacturing error occurs in the forming material. Therefore, it is possible to prevent manufacturing errors from occurring between the first resistor of the current input section and the second resistor of the current sense amplifier section, and to cancel out the temperature characteristics.

[0020] Also, since the metal material is aluminum or an aluminum-based alloy, no manufacturing error occurs in the forming material. Therefore, it is possible to prevent manufacturing errors from occurring between the first resistor of the current input section and the second resistor of the current sense amplifier section, and to cancel out the temperature characteristics.

[0021] Also, according to the present invention, by arranging the first resistor of the current input section and the second resistor of the current sense amplifier section so as to overlap vertically in the thickness direction of the semiconductor circuit formation layer or to be close to each other in the plane direction of the semiconductor circuit formation layer, it is easy to make the temperatures of the first resistor and the second resistor the same.

[0022] Also, according to the present invention, by making the shape of the second resistor of the current sense amplifier section a linear shape, the formation of the second resistor becomes easy.

[0023] When forming the second resistor so as to straddle a plurality of semiconductor circuit formation layers, an interlayer conduction member is interposed. Then, contact resistance occurs between the metal wiring material constituting the second resistor and the interlayer conduction member. Therefore, when forming the second resistor with an interlayer conductive member in between, it is difficult to form a resistor with a predetermined resistance value.

[0024] On the other hand, according to the present invention, by providing the second resistor only in a single semiconductor circuit formation layer, it becomes easier to form a second resistor with a set resistance value.

[0025] Furthermore, according to the present invention, the second resistor is formed to extend in the longitudinal direction, and a linear metal wire made of the same metal material as the second resistor is arranged near the side edge along the longitudinal direction, and the metal wire is a dummy pattern, so that the side edge along the longitudinal direction of the second resistor can be reproduced in the shape specified. From this perspective, it becomes easier to form a second resistor with a set resistance value. [Brief explanation of the drawing]

[0026] [Figure 1] This diagram schematically shows the circuit configuration of the overcurrent protection integrated circuit device 1. [Figure 2] This is an explanatory diagram showing the circuit configuration of the overcurrent protection integrated circuit device 1, with the resistance values ​​of the first and second resistors indicated when their temperatures rise to 100°C. [Figure 3] The diagrams schematically show good proximity arrangements between a first resistor and a second resistor formed on different semiconductor circuit formation layers. (a) is an explanatory diagram showing an arrangement where the resistors overlap vertically, (b) is an explanatory diagram showing an arrangement where the resistors partially overlap vertically, and (c) is an explanatory diagram showing an arrangement where the resistors are in close proximity in the plane direction of the semiconductor circuit formation layers. [Figure 4] Figure 4 shows a good shape for the second resistor 12, where (a) is an explanatory diagram showing an example of a second resistor with a straight shape, and (b) is an explanatory diagram showing an example of a second resistor with a straight shape with one fold. [Figure 5] This is an explanatory diagram showing a state in which a second resistor is formed across two semiconductor circuit formation layers via an interlayer conductive member. [Figure 6] This is an explanatory diagram showing an example where a dummy pattern is placed in close proximity to the second resistor. [Figure 7] This is an explanatory diagram illustrating an example of a defect where the width of the short side of the second resistor is uneven. [Modes for carrying out the invention]

[0027] An embodiment of the overcurrent protection integrated circuit device 1 according to the present invention will be described in detail with reference to the drawings.

[0028] Figure 1 is a schematic diagram showing the circuit configuration of an overcurrent protection integrated circuit device 1 to be incorporated into a non-isolated chopper. The overcurrent protection integrated circuit device 1 comprises a current input section 2, a current sense amplifier section 3, and an overcurrent determination section 4.

[0029] A portion of the overcurrent protection integrated circuit device 1 is manufactured as an integrated circuit (MIC) 5. In Figure 1, the area of ​​the integrated circuit 5 is enclosed by a dashed line and indicated by the reference numeral 5.

[0030] (Current input section) In the current input section 2, a first resistor 7 is connected to a switching element 6 made of a MOSFET, and a coil 8 and a rectifier diode 9 are connected to the first resistor 7. The input current from the switching element 6 (shown as the arrow Ipower in Figure 1) is received by the first resistor 7, and a voltage is applied to its terminals. The terminals of the first resistor 7 are connected to the current sense amplifier section 3 so that the current flows from the first resistor 7 to the current sense amplifier section 3.

[0031] (Current sense amplifier section) In the integrated circuit 5 that forms the overcurrent protection integrated circuit device 1, it is desirable that the current value flowing through it be as small as possible.

[0032] The current sense amplifier section 3 is the part that reduces the current value from the current input section 2 to a predetermined ratio and outputs it. In the case of the overcurrent protection integrated circuit device 1 shown in Figure 1, the current sense amplifier section 3 has a current ratio of 1 / 10000.

[0033] The current sense amplifier section 3 consists of a differential amplifier 10, an amplifying element 11, a second resistor 12, and a current mirror circuit 13.

[0034] As shown in Figure 1, the differential amplifier 10 has a pair of input and output sections, and the switch element 6 of the current input section 2 and the first resistor 7 (the current output side of the current input section 2) are connected to one of the pair of input sections of the differential amplifier 10 (the + side).

[0035] An amplifying element 11 is connected to the output of the differential amplifier 10. The second resistor 12 is connected to the other input (- side) of the differential amplifier 10 and the amplifying element 11.

[0036] The current mirror circuit 13 has a pair of active elements 14 and 15. One of the active elements 14 of the current mirror circuit 13 is configured so that the current flowing from the active element 14 enters the drain of the amplifying element 11.

[0037] The current mirror circuit 13 references the current output from one active element 14 and outputs a current of the same value from the other active element 15. The symbol REG shown in the diagram is an abbreviation for Regulator.

[0038] The differential amplifier 10 controls the voltage of the second resistor 12 so that the voltage value of the second resistor 12 is the same as the voltage value of the first resistor 7. The differential amplifier 10 causes current to flow from the current input section 2 to one of the active elements 14 of the current mirror circuit 13 at a predetermined ratio (current ratio 1 / 10000).

[0039] (Overcurrent judgment section) The overcurrent detection unit 4 consists of a third resistor 16, an input section 17 for the DC reference power supply, and an overcurrent protection comparator 18. The input section 17 for the DC reference power supply will henceforth be referred to simply as the DC reference power supply 17.

[0040] The other active element 15 of the current mirror circuit 13 is connected to the third resistor 16, and the third resistor 16 receives the current output from the other active element 15 (in Figure 1, the current from the other active element 15 is shown as the arrow Isns).

[0041] The overcurrent protection comparator 18 has a pair of judgment inputs. The overcurrent protection comparator 18 detects and compares the voltage value at which the third resistor 16 receives Isns and converts the voltage at which the DC reference power supply 17 is input to the other judgment input (- side).

[0042] The overcurrent protection comparator 18 has a third resistor 16 connected to one of the pair of determination inputs (+ side), and is configured so that the voltage at the end of the third resistor 16 enters the one determination input (+ side) of the overcurrent protection comparator 18.

[0043] A DC reference power supply 17 is connected to the other judgment input section (- side) of the overcurrent protection comparator 18, and a constant voltage from the DC reference power supply 17 is provided to enter the other judgment input section (- side).

[0044] In this embodiment, the voltage of the DC reference power supply 17 is set to 1V, as shown in the diagram. The overcurrent protection comparator 18 detects and compares the voltage value of the voltage converted by receiving the current (Isns) from the other active element 15 of the current mirror circuit 13 through the third resistor 16 with the voltage value of the DC reference power supply 17 (1V).

[0045] The overcurrent protection comparator 18 outputs a signal for overcurrent protection when the voltage value across the third resistor 16 exceeds the voltage value of the DC reference power supply 17.

[0046] Therefore, the overcurrent protection integrated circuit device 1 does not send a signal for overcurrent protection when the current entering the current input section 2 is, for example, less than 1A (1 ampere), and sends a signal for overcurrent protection when the current entering the current input section 2 becomes 1A.

[0047] In the overcurrent protection integrated circuit device 1 of the present invention, the material used to form the first resistor 7 of the current input section 2 is aluminum, a metallic material, and the material used to form the second resistor 12 of the current sense amplifier section 3 is also a metallic material, specifically aluminum, the same material as the first resistor 7.

[0048] In this embodiment, the first resistor 7 and the second resistor 12 are metal wiring resistors made of aluminum as the forming material, as described above. Both the first resistor 7 and the second resistor 12 have a temperature characteristic in which their resistance value changes by +30% or more with a 100°C increase.

[0049] The first resistor, resistor 7, has a resistance of 0.1Ω at 0°C and 0.13Ω at 100°C. The second resistor 12 has a resistance of 1 kΩ at a temperature of 0°C and 1.3 kΩ at a temperature of 100°C.

[0050] (When the temperatures of the first resistor 7 and the second resistor 12 are 0°C) As shown in Figure 1, when the current entering the current input section 2 is 1A and the temperatures of the first resistor 7 and the second resistor 12 are 0°C, the resistance value of the first resistor 7 is 0.1Ω, and the voltage across the terminals of the first resistor 7 is 0.1V.

[0051] The differential amplifier 10 adjusts the voltage across the terminals of the second resistor 12 to 0.1V. A current of 100 μA (voltage 0.1V / resistance 1kΩ = current 100 μA) is passed from the differential amplifier 10 to the current mirror circuit 13, and a current of 100 μA is passed from the current mirror circuit 13 to the overcurrent detection unit 4.

[0052] The resistance value of the third resistor 16 in the overcurrent detection unit 4 is 10kΩ. The current flowing from the current mirror circuit 13 is received by the third resistor 16. The voltage across the terminals of the third resistor 16 is 1V. (Current 100μA × Resistance 10kΩ = Voltage 1V)

[0053] With the voltage applied to the terminal of the third resistor 16, the current (Isns) from the current mirror circuit 13 is received by the third resistor 16, converted into a voltage, and enters one of the judgment input sections (+ side) of the overcurrent protection comparator 18.

[0054] The overcurrent protection comparator 18 detects the voltage obtained when the current (Isns) entering one of the judgment inputs (+ side) is received by the third resistor 16 and converted into a voltage. When the voltage value of the incoming current exceeds the voltage value of the DC reference power supply 17, it sends out an overcurrent protection signal.

[0055] (When the temperature of the first resistor 7 and the second resistor 19 is 100°C) The current entering the current input section 2 is 1A, and the temperatures of the first resistor 7 and the second resistor 12 rise to 100°C. As a result, the resistance values ​​of the first resistor 7 and the second resistor 12 change due to the temperature characteristics, and the changed resistance values ​​are shown in Figure 2.

[0056] The resistance of the first resistor 7 is 0.13Ω. The voltage across the terminals of the first resistor 7 is 0.13V.

[0057] The resistance value of the second resistor 12 is 1.3kΩ. The differential amplifier 10 adjusts the voltage across the terminals of the second resistor 12 to 0.13V.

[0058] A current of 100 μA (voltage 0.13 V / resistance 1.3 kΩ = current 100 μA) is passed from the differential amplifier 10 to the current mirror circuit 13, and a current of 100 μA is passed from the current mirror circuit 13 to the overcurrent detection unit 4.

[0059] The current flowing from the current mirror circuit 13 is received by the third resistor 16. The voltage across the terminals of the third resistor 16 is 1V. (Current 100μA × Resistance 10kΩ = Voltage 1V)

[0060] With the voltage applied to the terminal of the third resistor 16, the current (Isns) from the current mirror circuit 13 is received by the third resistor 16, converted into a voltage, and enters one of the judgment input sections (+ side) of the overcurrent protection comparator 18.

[0061] The overcurrent protection comparator 18 detects the voltage obtained when the current (Isns) entering one of the judgment inputs (+ side) is received by the third resistor 16 and converted into a voltage. When the voltage value of the incoming current exceeds the voltage value of the DC reference power supply 17, it sends out an overcurrent protection signal.

[0062] The overcurrent protection integrated circuit device 1 is a semiconductor chip in which multiple semiconductor circuit formation layers are stacked. Furthermore, the first resistor 7 and the second resistor 12 do not need to be provided on a single semiconductor circuit formation layer.

[0063] Figure 3 shows a state in which the semiconductor circuit formation layer 20, on which the first resistor 7 is provided, and the semiconductor circuit formation layer 21, on which the second resistor 12 is provided, are different layers, and the semiconductor circuit formation layers 20 and 21 are stacked.

[0064] As shown in Figure 3(a), it is preferable that the first resistor 7 and the second resistor 12 are arranged to overlap vertically.

[0065] Furthermore, as shown in Figure 3(b), an arrangement in which the first resistor 7 and the second resistor 12 partially overlap vertically is also preferable.

[0066] Furthermore, as shown in Figure 3(c), it is also preferable that the first resistor 7 and the second resistor 12 are in close proximity in the planar direction (direction perpendicular to the thickness direction) of the semiconductor circuit formation layers 20 and 21.

[0067] Figure 4 shows an example of a good shape for the second resistor 12. As shown in Figure 4(a), a straight line shape is preferable for the second resistor 12. Also, as shown in Figure 4(b), a shape with one fold is also preferable for the second resistor 12.

[0068] While the ideal shape for the second resistor 12 was defined as a straight line, the term "straight line" is not limited to a single line. As shown in Figure 4(b), it also includes long shapes with a small number of folds.

[0069] Furthermore, if the second resistor 12 is created by increasing the number of folds, an inductance component will be generated. Additionally, this method has the drawback of generating noise.

[0070] Furthermore, it is preferable that the second resistor 12 be provided only in the single semiconductor circuit formation layer 21.

[0071] Figure 5 shows the state in which the second resistor 12 is fabricated by connecting a metal wiring 21a provided on the semiconductor circuit formation layer 21 and a metal wiring 21b provided on the semiconductor circuit formation layer above the semiconductor circuit formation layer 21 in series using an interlayer conductive member (via) 22.

[0072] When a second resistor 12 is fabricated using the interlayer conductive member 22, it has the disadvantage that the resistance value deviates from the set value because contact resistance is included. Therefore, it is not desirable to fabricate the second resistor 12 across multiple layers.

[0073] Figure 6 also shows an example in which linear metal wiring 21c, made of the same metal material as the second resistor 12, is placed near each of the sides along the longitudinal edge of the second resistor 12.

[0074] By providing metal wiring 21c near each of the longitudinal sides of the second resistor 12 at the same time as forming the second resistor 12, the linear shape of the second resistor 12 can be reproduced more accurately, and the formation of the second resistor 12 becomes easier.

[0075] The metal wiring 21c is a dummy pattern. The metal wiring 21c of the dummy pattern is not connected to the circuit within the semiconductor chip that constitutes the overcurrent protection integrated circuit device 1. In Figure 6, an interlayer conductive member 22 is provided at the end of the second resistor 12.

[0076] Furthermore, it is even more preferable that the width of the shorter side perpendicular to the longer side of the second resistor 12 be kept constant.

[0077] Figure 7 shows an example where the width of the short side of the second resistor 12 is uneven. When the width of the short side of the second resistor 12 is uneven, there is a problem in that variations in the resistance value are likely to occur during manufacturing.

[0078] In this embodiment, the metal material forming the first resistor 7 and the second resistor 12 is described as aluminum. The metal material does not need to be high-purity aluminum; aluminum or an aluminum alloy can be used as the metal material.

[0079] Although the metal material used to form the metal wiring 21c used as a dummy pattern is described as aluminum, it does not need to be high-purity aluminum; aluminum or an aluminum alloy can be used as the metal material.

[0080] Furthermore, in this invention, the metallic material used to form the first resistor 7 and the second resistor 12 is not limited to aluminum and aluminum alloys.

[0081] Embodiments of the present invention have been described in detail above. However, the foregoing description is intended to facilitate understanding of the present invention and is not intended to limit it. The present invention may include modifications and improvements that can be made without departing from its spirit. Furthermore, the present invention includes equivalents thereof. [Explanation of Symbols]

[0082] 1… Overcurrent protection integrated circuit device 2...Current input section 3…Current sense amplifier section 4...Overcurrent determination section 6…Switching element 7…The First Resistance 10…Differential amplifier 11… Amplifying element 12…The Second Resistance 13…Current mirror circuit 16…The Third Resistance 17…DC reference power supply 18... Overcurrent protection comparator 20a, 21b, 21c...metal wiring 22...Interlayer conductive member

Claims

1. An overcurrent protection integrated circuit device comprising a current input section, a current sense amplifier section, and an overcurrent detection section, and connected to a constant voltage DC power supply, The current input section has a first resistor that receives the input current. The current sense amplifier section comprises a differential amplifier, a switching element, a second resistor, and a current mirror circuit. The overcurrent detection unit comprises a third resistor and an overcurrent protection comparator. The differential amplifier has a pair of input and output sections, one of the input sections is connected to the current output side of the current input section, and the other of the input section is connected to the second resistor. The switch element is connected to the second resistor and the output section. The current mirror circuit has a pair of active elements, one of which is a current mirror circuit. The other active element is connected to the output section, and the other active element is connected to the third resistor. The overcurrent protection comparator has a pair of determination input units, one of which is connected to the other active element, and the other determination input unit is connected to the DC power supply. The current sense amplifier section controls the voltage of the second resistor using the differential amplifier so that the voltage across the first resistor and the voltage across the second resistor are the same, and sends a current from the switch element to the current mirror circuit side that is reduced to a predetermined ratio from the input current. The overcurrent detection unit compares the voltage across the third resistor with the voltage of the DC power supply, and outputs a signal when the voltage across the third resistor exceeds the voltage of the DC power supply. An overcurrent protection integrated circuit device characterized in that the first resistor and the second resistor are made of the same metallic material.

2. The overcurrent protection integrated circuit device according to claim 1, characterized in that the metal material is aluminum or an aluminum alloy.

3. The overcurrent protection integrated circuit device is a semiconductor chip in which a plurality of semiconductor circuit formation layers are stacked, The semiconductor circuit formation layer on which the second resistor is provided is a different layer from the semiconductor circuit formation layer on which the first resistor is provided. The overcurrent protection integrated circuit device according to claim 1, characterized in that the first resistor and the second resistor are arranged to overlap vertically in the thickness direction of the semiconductor circuit formation layer, or to be in close proximity in the plane direction of the semiconductor circuit formation layer.

4. The overcurrent protection integrated circuit device according to claim 1, characterized in that the shape of the second resistor is a straight line.

5. The overcurrent protection integrated circuit device according to either claim 3 or 4, characterized in that the second resistor is provided only in a single semiconductor circuit formation layer.

6. The second resistor is formed extending in the longitudinal direction, and a linear metal wire made of the same metallic material as the second resistor is arranged near the side edge along the longitudinal direction. The overcurrent protection integrated circuit device according to claim 1, characterized in that the metal wiring is a dummy pattern.

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