Multi-charged particle beam lithography system

Abstract

The present invention provides a device capable of correcting the positional fluctuations of a multi-charged particle beam caused by a magnetic field generated by the circuit current flowing through a mounting substrate on which a blanking aperture array chip through which the multi-charged particle beam passes is located. [Configuration] A multi-charged particle beam lithography apparatus according to one aspect of the present invention is characterized by comprising: a blanking aperture array mechanism 204 having a blanking aperture array chip 213 and a mounting substrate 211 on which a power plane for supplying power to the blanking aperture array chip is formed, a current acquisition unit for acquiring the current flowing through the power plane, one or more deflectors 215 for deflecting the multi-charged particle beam that has passed through the blanking aperture array mechanism, and a deflector control circuit 161 for controlling one or more deflectors to correct the position fluctuation of the multi-charged particle beam that occurs in accordance with the current flowing through the power plane.

Description

Technical Field

[0001] One aspect of the present invention relates to a multi-charged particle beam lithography apparatus, and more particularly, to a method for correcting the displacement of a multi-electron beam caused by a magnetic field generated by a mechanism for individually blanking the multi-electron beam.

Background Art

[0002] Lithography technology, which is responsible for the progress of semiconductor device miniaturization, is an extremely important process for generating patterns, the only one in the semiconductor manufacturing process. In recent years, with the high integration of LSIs, the circuit line width required for semiconductor devices has been steadily miniaturized year by year. Here, electron beam (electron beam) lithography technology inherently has excellent resolution, and electron beam lithography is performed on wafers and the like.

[0003] For example, there is a lithography apparatus using a multi-beam. By using a multi-beam, a larger number of beams can be irradiated at once compared to the case of lithography with a single electron beam, so the throughput can be significantly improved. In such a multi-beam lithography apparatus, for example, an electron beam emitted from an electron gun is passed through a mask having a plurality of holes to form a multi-beam, and each beam is individually blanked and controlled. Each unshielded beam is reduced by an optical system and deflected by a deflector to be irradiated to a desired position on the sample.

[0004] In multi-beam lithography, a pattern is formed by individually controlling the irradiation time of the electron beam incident on the sample. Therefore, a mounting substrate on which a blanking aperture array chip having a plurality of blanker functions for individually turning off a beam with an irradiation time of zero or after a desired irradiation time has elapsed is mounted on the lithography apparatus.

[0005] It has been found that a displacement occurs in the electron beam passing through the blanking aperture array chip due to the magnetic field generated by the circuit current flowing through such a mounting substrate. When such a displacement occurs, the lithography accuracy deteriorates.

[0006] Here, although not related to the blanking aperture array mechanism for multi-beam lithography, a technique is disclosed for correcting the positional deviation of an electron beam on the sample surface based on a first magnetic field caused by an objective lens and a second magnetic field caused by eddy currents generated by the first magnetic field and the movement of a stage in a VSB-type single-beam lithography apparatus (see Patent Document 1).

Prior Art Documents

Patent Documents

[0007]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0008] One aspect of the present invention provides an apparatus capable of correcting the positional variation of a multi-charged particle beam caused by a magnetic field generated by a circuit current flowing through a mounting substrate on which a blanking aperture array chip through which the multi-charged particle beam passes is disposed.

Means for Solving the Problems

[0009] A multi-charged particle beam lithography apparatus according to one aspect of the present invention includes a blanking aperture array chip having a plurality of blankers that individually switch an incident multi-charged particle beam between a beam ON state and a beam OFF state by beam deflection, a mounting substrate that supports the blanking aperture array chip and on which a power supply plane for supplying power to the blanking aperture array chip is formed, a blanking aperture array mechanism having the above, a restriction aperture substrate that shields the beam in the beam OFF state among the multi-charged particle beams that have passed through the blanking aperture array mechanism, a current acquisition unit that acquires the current flowing through the power supply plane, A single or more deflectors that deflects a multi-charged particle beam that has passed through a blanking aperture array mechanism, A deflector control circuit controls one or more deflectors to correct the positional variation of a multi-charged particle beam caused by the current flowing through the power plane, A stage on which the sample is placed, An electron optical system that irradiates a sample with a multi-charged particle beam whose positional variation has been corrected, It is characterized by having the following features.

[0010] Furthermore, it is equipped with a deflection control circuit that controls the blanking aperture array mechanism. The deflection control circuit preferably includes a current measurement unit, which is located within the deflection control circuit and measures the current flowing from the deflection control circuit to the power plane.

[0011] Alternatively, it may further include a deflection control circuit that controls the blanking aperture array mechanism. The deflection control circuit outputs irradiation pattern data to the blanking aperture array mechanism. The blanking aperture array mechanism controls the individual switching of multi-charged particle beams between the beam ON state and the beam OFF state based on irradiation pattern data. The deflector control circuit is, A dummy circuit having the same circuit configuration as the circuit in the blanking aperture array mechanism, which receives irradiation pattern data and is controlled by the irradiation pattern data, A current prediction unit, which is a current acquisition unit, predicts the current flowing through the power plane of a dummy circuit by measuring the current flowing through the power plane of the dummy circuit, which is controlled by irradiation pattern data, and Having this feature is preferable.

[0012] Alternatively, a memory device that stores drawing data for drawing a sample, A control computer that converts drawing data into irradiation pattern data, Furthermore, The control computer preferably also functions as a current acquisition unit, calculating the current flowing through the power plane based on the irradiation pattern data.

[0013] Another embodiment of the present invention is a multi-charged particle beam lithography apparatus, A blanking aperture array chip having multiple blankers that individually switch an incoming multi-charged particle beam between a beam ON state and a beam OFF state by beam deflection, A mounting substrate having a power plane formed on it that supports a blanking aperture array chip and supplies power to the blanking aperture array chip, A blanking aperture array mechanism having, A limiting aperture substrate that shields the beam in the beam-off state among the multi-charged particle beams that have passed through the blanking aperture array mechanism, A single or more deflectors that deflects a multi-charged particle beam that has passed through a blanking aperture array mechanism, A storage device that stores correction amount information, which defines correction amounts calculated offline in advance and in shot order to correct for positional variations of multi-charged particle beams caused by the current flowing through the power plane, A deflector control circuit controls one or more deflectors to correct the position variation of the multi-charged particle beam caused by the current flowing through the power plane, using the correction amount for each shot, based on the correction amount information, by referring to the correction amount information for that shot. A stage on which the sample is placed, An electron optical system that irradiates a sample with a multi-charged particle beam whose positional variation has been corrected, It is characterized by having the following features.

[0014] Furthermore, it is preferable that one or more deflectors be placed between the blanking aperture array mechanism and the limiting aperture substrate.

[0015] Furthermore, it is preferable that one or more deflectors also function as objective deflectors to deflect the multi-charged particle beam to a desired position on the sample. [Effects of the Invention]

[0016] According to one aspect of the present invention, it is possible to correct the positional fluctuations of a multi-charged particle beam caused by a magnetic field generated by the circuit current flowing through a mounting substrate on which a blanking aperture array chip through which the multi-charged particle beam passes is arranged. [Brief explanation of the drawing]

[0017] [Figure 1] This is a conceptual diagram showing the configuration of the drawing device in Embodiment 1. [Figure 2] This is a conceptual diagram showing the configuration of the molded aperture array substrate in Embodiment 1. [Figure 3] This is a cross-sectional view showing the configuration of the central part of the blanking aperture array mechanism in Embodiment 1. [Figure 4] This is a top-view conceptual diagram showing a part of the configuration within the membrane region of the blanking aperture array chip in Embodiment 1. [Figure 5] This figure shows an example of the individual blanking mechanism of Embodiment 1. [Figure 6] This figure shows an example of the connection configuration of the shift register in Embodiment 1. [Figure 7] This figure shows an example of a split shot of a multi-electron beam in Embodiment 1. [Figure 8] This is a conceptual diagram showing the internal configuration of the individual blanking control circuit and the common blanking control circuit in Embodiment 1. [Figure 9] This is a top view of an example of a blanking aperture array mechanism in Embodiment 1. [Figure 10] This is a cross-sectional view of an example of a blanking aperture array mechanism in Embodiment 1. [Figure 11] This diagram illustrates the positional misalignment and correction method of the multi-electron beam in Embodiment 1. [Figure 12] This figure illustrates an example of a multi-electron beam misalignment in Embodiment 1. [Figure 13]This figure shows an example of the relationship between operating current and misalignment in Embodiment 1. [Figure 14] This is a conceptual diagram illustrating an example of the drawing operation in Embodiment 1. [Figure 15] This figure shows an example of the multi-beam irradiation area and the pixels to be drawn in Embodiment 1. [Figure 16] This figure illustrates an example of multibeam lithography operation in Embodiment 1. [Figure 17] This figure shows an example of the configuration of a drawing device in a modified example of Embodiment 1. [Figure 18] This figure shows an example of the configuration of the drawing device in Embodiment 2. [Figure 19] This figure shows an example of the configuration of the drawing device in Embodiment 3. [Figure 20] This figure shows an example of the configuration of the drawing device in Embodiment 4. [Figure 21] This figure shows an example of the configuration of the drawing device in Embodiment 5. [Modes for carrying out the invention]

[0018] In the following embodiments, an electron beam configuration will be described as an example of a charged particle beam. However, the charged particle beam is not limited to an electron beam; it may also be a beam using charged particles such as an ion beam.

[0019] Embodiment 1. Figure 1 is a conceptual diagram showing the configuration of a lithography apparatus in Embodiment 1. In Figure 1, the lithography apparatus 100 includes a lithography mechanism 150 and a control system circuit 160. The lithography apparatus 100 is an example of a multi-charged particle beam lithography apparatus and an example of a multi-charged particle beam exposure apparatus. The lithography mechanism 150 includes an electron tube 102 (electron beam column) and a lithography chamber 103. Inside the electron tube 102 are an electron gun 201, an illumination lens 202, a shaped aperture array substrate 203, a blanking aperture array mechanism 204, one or more deflectors 215, a reduction lens 205, a deflector 212, a limiting aperture substrate 206, an objective lens 207, a deflector 208, and a deflector 209. The electron gun 201, illumination lens 202, molded aperture array substrate 203, blanking aperture array mechanism 204, one or more deflectors 215, reduction lens 205, deflector 212, limiting aperture substrate 206, objective lens 207, deflector 208, and deflector 209 constitute the electron optical system 151.

[0020] In the example in Figure 1, a case is shown where two stages of deflectors 214 and 219 are arranged as one or more stages of deflectors 215. Also, in the example in Figure 1, electrostatic deflectors are shown as one example of one or more stages of deflectors 215 (deflectors 214 and 219), but it is not limited to this. For example, magnetic field deflectors may also be used. Alternatively, when two or more stages of deflectors 214 and 219 are used, a combination of electrostatic deflectors and magnetic field deflectors may be used. In other words, at least one of electrostatic deflectors and magnetic field deflectors is used as one or more stages of deflectors 215 (deflectors 214 and 219).

[0021] Furthermore, while the example in Figure 1 shows a case where one or more deflectors 215 (deflectors 214, 219) are placed between the blanking aperture array mechanism 204 and the reduction lens 205, the case is not limited to this. One or more deflectors 215 (deflectors 214, 219) may be placed between the blanking aperture array mechanism 204 and the sample 101. Preferably, one or more deflectors 215 (deflectors 214, 219) may be placed between the blanking aperture array mechanism 204 and the limiting aperture substrate 206.

[0022] The blanking aperture array mechanism 204 includes a mounting substrate 211 and a blanking aperture array chip 213. An opening is formed in the center of the mounting substrate 211 through which the entire multi-electron beam 20 can pass. The blanking aperture array chip 213 is suspended from the mounting substrate 211 so as to block this opening. In other words, the outer periphery of the blanking aperture array chip 213 is supported by the mounting substrate 211. The blanking aperture array chip 213 may also be placed on the mounting substrate 211.

[0023] An XY stage 105 is placed inside the drawing chamber 103. Samples 101, such as masks, which will be the substrates to be drawn on during drawing (exposure), are placed on the XY stage 105. Samples 101 include exposure masks used in the manufacturing of semiconductor devices, or semiconductor substrates (silicon wafers) on which semiconductor devices are manufactured. Samples 101 also include mask blanks with resist coated on them, but which have not yet been drawn on.

[0024] Furthermore, a mirror 210 for measuring the position of the XY stage 105 is placed on the XY stage 105. Also, a mark 106 is placed on the XY stage 105, with its surface height at the same height as the sample 101. Preferably, a cross pattern or a rectangular pattern is used as the mark pattern formed on the mark 106.

[0025] The control system circuit 160 includes a control computer 110, memory 112, deflection control circuit 130, logic circuit 131, digital-to-analog converter (DAC) amplifier units 132 and 134, lens control circuit 136, stage control mechanism 138, stage position measuring instrument 139, deflector control circuit 161, DAC amplifier units 162 and 164, and storage devices 140 and 142 such as magnetic disk drives. The control computer 110, memory 112, deflection control circuit 130, lens control circuit 136, stage control mechanism 138, stage position measuring instrument 139, deflector control circuit 161, and storage devices 140 and 142 are connected to each other via a bus (not shown). The deflection control circuit 130 is connected to the DAC amplifier units 132 and 134, logic circuit 131, deflector control circuit 161, and blanking aperture array mechanism 204. The deflector control circuit 161 is connected to the DAC amplifier units 162 and 164.

[0026] The deflector 209 is composed of four or more electrodes, and each electrode is controlled by the deflection control circuit 130 via a DAC amplifier 132. The deflector 208 is composed of four or more electrodes, and each electrode is controlled by the deflection control circuit 130 via a DAC amplifier 134. The deflector 212 is composed of two or more electrodes and is controlled by a logic circuit 212. The deflector 214 is composed of four or more electrodes, and each electrode is controlled by the deflector control circuit 161 via the DAC amplifier 162. The deflector 219 is composed of four or more electrodes, and each electrode is controlled by the deflector control circuit 161 via the DAC amplifier 164.

[0027] An electromagnetic lens group, such as the illumination lens 202, the reduction lens 205, and the objective lens 207, is controlled by the lens control circuit 136.

[0028] The position of the XY stage 105 is controlled by the drive of motors on each axis (not shown) controlled by the stage control mechanism 138. The stage position measuring instrument 139 measures the position of the XY stage 105 by receiving reflected light from the mirror 210 using the principle of laser interferometry.

[0029] The control computer 110 contains a shot data generation unit 70, a data processing unit 72, a transfer processing unit 74, and a drawing control unit 76. Each of these "~units" has a processing circuit. Such processing circuits include, for example, electrical circuits, computers, processors, circuit boards, quantum circuits, or semiconductor devices. Each of these "~units" may use a common processing circuit (the same processing circuit) or different processing circuits (separate processing circuits). Information input to and output from the shot data generation unit 70, data processing unit 72, transfer processing unit 74, and drawing control unit 76, as well as information being calculated, are stored in the memory 112 each time.

[0030] The deflection control circuit 161 contains a deflection control unit 60, a dummy circuit 62, and a current measuring unit 64. The deflection control unit 60 and the current measuring unit 64 each have a processing circuit. Such a processing circuit includes, for example, an electrical circuit, a computer, a processor, a circuit board, a quantum circuit, or a semiconductor device. The deflection control unit 60 and the current measuring unit 64 may use a common processing circuit (the same processing circuit) or different processing circuits (separate processing circuits). Information input to and output from the deflection control unit 60 and the current measuring unit 64, as well as information being calculated, is stored each time in a memory (not shown) within the deflection control circuit 161. The dummy circuit 62 has a circuit configuration similar to that of the circuit in the blanking aperture array mechanism 204. However, since it is merely a dummy circuit, it does not interfere with the multi-electron beam 20.

[0031] The drawing operation of the drawing device 100 is controlled by the drawing control unit 76. Furthermore, the transfer process of the irradiation time data for each shot to the deflection control circuit 130 is controlled by the transfer processing unit 74.

[0032] Furthermore, drawing data (chip data) is input from outside the drawing device 100 and stored in the storage device 140. The chip data defines information about multiple graphic patterns that constitute the chip pattern. Specifically, for each graphic pattern, for example, multiple vertex coordinates arranged in the order that constitutes the graphic are defined. Alternatively, for each graphic pattern, for example, a graphic code, coordinates, and size are defined.

[0033] Here, Figure 1 shows the configuration necessary to explain Embodiment 1. The drawing device 100 may also have other configurations that are normally necessary.

[0034] Figure 2 is a conceptual diagram showing the configuration of a molded aperture array substrate in Embodiment 1. In Figure 2, the molded aperture array substrate 203 has p rows horizontally (x direction) × q rows vertically (y direction) (p,q≧2) holes (openings) 22 formed in a matrix at a predetermined arrangement pitch. In the example of Figure 2, for example, it shows a case where 512 × 512 rows of holes 22 are formed horizontally and vertically (x,y direction). The number of holes 22 is not limited to this. For example, 64 × 64 rows of holes 22 may be formed. Each hole 22 is formed as a rectangle of the same dimensions and shape. Alternatively, they may be circles of the same diameter. A portion of the electron beam 200 passes through each of these multiple holes 22 to form a multi-electron beam 20. In other words, the molded aperture array substrate 203 forms and emits a multi-electron beam 20. The molded aperture array substrate 203 is an example of a source for emitting a multi-electron beam 20.

[0035] Figure 3 is a cross-sectional view showing the configuration of the central part of the blanking aperture array mechanism in Embodiment 1. Figure 4 is a conceptual top view showing a part of the configuration within the membrane region of the blanking aperture array chip in Embodiment 1. Note that the positional relationship between the control electrode 24, the counter electrode 26, and the control circuit 41 is not shown in the same way in Figures 3 and 4.

[0036] The blanking aperture array chip 213 has multiple blankers that individually switch the incident multi-electron beam 20 between a beam ON state and a beam OFF state by beam deflection. Specifically, it is configured as follows. The blanking aperture array chip 213 has a blanking aperture array substrate 31 made of a semiconductor substrate such as silicon, and a thin membrane region 330 is formed in the center of the blanking aperture array substrate 31. Through holes 25 (openings) for each beam of the multi-electron beam 20 are opened in the membrane region 330 at positions corresponding to each hole 22 of the molded aperture array substrate 203 shown in Figure 2. Then, a set of control electrodes 24 and counter electrodes 26 (blankers: blanking deflectors) are arranged at positions opposite each other across the corresponding through holes 25. In addition, a control circuit 41 (logic circuit) that applies a deflection voltage to the control electrode 24 for each through hole 25 is arranged inside the blanking aperture array substrate 31 near each through hole 25. The opposing electrodes 26 for each beam are connected to ground.

[0037] Furthermore, control circuits 44 are arranged on or within the blanking aperture array substrate 31, for example, on both sides in the x-direction, with the membrane region 330 in between.

[0038] Furthermore, as shown in Figure 4, each control circuit 41 is connected to an n-bit (e.g., 1-bit) parallel wiring for control signals. In addition to the n-bit parallel wiring for irradiation time control signals (data), each control circuit 41 is also connected to wiring for a clock (shift clock) signal, load signal, shot signal, and power supply. These wirings may utilize some of the existing parallel wiring. For each beam (each through-hole 25) constituting the multi-beam, an individual blanking mechanism 47 is configured, consisting of a control electrode 24, a counter electrode 26, and a control circuit 41. In Embodiment 1, a shift register method is used as the data transfer method. In the shift register method, the multi-beam is divided into multiple groups for each beam, and multiple shift registers for multiple beams within the same group are connected in series. Specifically, multiple control circuits 41 formed in an array on the membrane region 330 are grouped, for example, at a predetermined pitch within the same row or column. The groups of control circuits 41 within the same group are connected in series, as shown in Figure 4. Then, signals from the pads 343, which are arranged in groups, are transmitted to the control circuit 41 within each group.

[0039] Figure 5 shows an example of the individual blanking mechanism of Embodiment 1. In Figure 5, an amplifier 46 (an example of a switching circuit) is arranged inside the control circuit 41. As an example of the amplifier 46, a CMOS (Complementary MOS) inverter circuit that acts as a switching circuit is arranged. Either an L (low) potential (e.g., ground potential) that is lower than the threshold voltage or an H (high) potential (e.g., 1.5V) that is higher than the threshold voltage is applied as a control signal to the input (IN) of the CMOS inverter circuit. In Embodiment 1, when an L potential is applied to the input (IN) of the CMOS inverter circuit, the output (OUT) of the CMOS inverter circuit applied to the control circuit 41 becomes a positive potential (Vdd), and the electric field due to the potential difference with the ground potential of the counter electrode 26 deflects the corresponding beam, and the beam is controlled to turn OFF by shielding it with the limiting aperture substrate 206. On the other hand, when a high potential is applied to the input (IN) of the CMOS inverter circuit (active state), the output (OUT) of the CMOS inverter circuit becomes ground potential, and the potential difference with the ground potential of the counter electrode 26 disappears, so the corresponding beam is not deflected, and the control is made so that the beam turns ON when it passes through the limiting aperture substrate 206. Blanking control is performed by this deflection.

[0040] Figure 6 shows an example of the connection configuration of the shift register in Embodiment 1. The control circuits 41 for each beam are formed in an array in the membrane region 330. The multiple control circuits 41 arranged in the array are separated into left and right halves. For example, for each of the multiple control circuits 41 (in the x-direction) arranged in the same row on the right half, as shown in Figure 6, the columns of control circuits 41 in each row are sequentially distributed and grouped into, for example, eight groups. For example, in the case of a 64x64 multi-electron beam 20, for example, the control circuits 41 for the 1st to 32nd beams in each row of the 32 columns on the right half constitute data sequence 1 (group) at intervals of 8 beam pitches, such as 1, 9, 17, 25. Similarly, data sequence 2 (group) is constituted at intervals of 8 beam pitches, such as 2, 10, 18, 26. Similarly, data sequence 3 (group) to data sequence 8 (group) are constituted. The groups of control circuits 41 within each group are connected in series. The same applies to the left half of the multiple control circuits 41 arranged in the array.

[0041] Then, the row-by-row signals output from the deflection control circuit 130 to the blanking aperture array mechanism 204 are divided via the circuit in the mounting board 211 or the control circuit 44 in the blanking aperture array chip 213 and transmitted in parallel to each group. The signals from each group are then transmitted to the control circuits 41 connected in series within the group. Specifically, a shift register 11 is placed in each control circuit 41, and the shift registers 11 in the control circuits 41 of the same group are connected in series. In the example in Figure 6, four shift registers 11 are connected in series for each data sequence (group). Therefore, when transferring n-bit data in series, 4n clock signals transfer (transmit) the irradiation time control signals (ON / OFF control data) for each beam to the shift register 11 for each beam within the blanking aperture array mechanism 204. For example, if a 512 x 512 multi-beam configuration is made, then, for example, 32 shift registers 11 are connected in series for each data sequence (group). Therefore, when transferring n-bit data in series, 32n clock signals transmit (transfer) the irradiation time control signals for each beam to the shift register 11 for each beam.

[0042] Then, each individual blanking mechanism 47 controls the beam for the duration of the shot according to the irradiation time control signal transferred to the shift register 11 for each beam. Here, we will describe a split shot. Alternatively, the irradiation time of the shot may be controlled individually for each beam using a counter circuit (not shown).

[0043] Figure 7 shows an example of a split shot of a multi-electron beam in Embodiment 1. In Figure 7, the maximum irradiation time Ttr for one shot is divided into multiple sub-shots (split shots) with multiple sub-irradiation times. In other words, the maximum irradiation time Ttr for one shot of the multi-electron beam 20 is divided into n sub-shots (split shots) with different sub-irradiation times, for example, irradiating the same pixel 36. First, the gradation value Ntr is determined by dividing the maximum irradiation time Ttr by the quantization unit Δ (gradation value resolution). For example, if n=6, it is divided into 6 sub-shots. When defining the gradation value Ntr as a binary value with n digits, it is preferable to pre-set the quantization unit Δ so that the maximum irradiation time Ttr becomes gradation value Ntr=64. This results in a maximum irradiation time Ttr=64Δ. Then, as shown in Figure 7, the n sub-shots are divided into 2 digits k'=0 to 5. k’ It has one of the irradiation times of Δ. In other words, 32Δ(=2 5 Δ), 16Δ(=2 4 Δ), 8Δ(=2 3 Δ),4Δ(=2 2 Δ), 2Δ(=2 1 Δ), Δ(=2 0 Each sub-irradiation time is one of Δ. That is, one multi-beam shot is divided into a sub-shot with a sub-irradiation time tk' of 32Δ, a sub-shot with a sub-irradiation time tk' of 16Δ, a sub-shot with a sub-irradiation time tk' of 8Δ, a sub-shot with a sub-irradiation time tk' of 4Δ, a sub-shot with a sub-irradiation time tk' of 2Δ, and a sub-shot with a sub-irradiation time tk' of Δ. The n sub-shots that take place during one shot period are performed consecutively. The n sub-shots performed during one shot period are performed with the same beam for each of the 36 pixels.

[0044] In addition, the maximum irradiation time Ttr corresponds to the irradiation time for the pixel with the largest dose amount among all the pixels 36 within the drawing area 30 of the sample 101. In other words, it corresponds to the irradiation time when the dose amount becomes the largest and reaches the maximum. The drawing apparatus 100 determines the constant stage speed by a shot cycle in which a settling time is added to such a maximum irradiation time Ttr.

[0045] Therefore, any irradiation time t(=NΔ) for irradiating each pixel 36 can be defined by a combination of at least one sub-shot among a set of sub-shot times defined by 32Δ(=2 5 Δ), 16Δ(=2 4 Δ), 8Δ(=2 3 Δ), 4Δ(=2 2 Δ), 2Δ(=2 1 Δ), and Δ(=2 0 Δ), provided that the irradiation time is not zero.

[0046] Irradiation time data indicating the combination of sub-shots can be defined by 6-bit data in the case of divided shots with n = 6. For example, if it is 100000, it indicates that a sub-shot of 32Δ(k' = 5) is performed. For example, if it is 010000, it indicates that a sub-shot of 16Δ(k' = 4) is performed. For example, if it is 001000, it indicates that a sub-shot of 8Δ(k' = 3) is performed. For example, if it is 000100, it indicates that a sub-shot of 4Δ(k' = 2) is performed. For example, if it is 000010, it indicates that a sub-shot of 2Δ(k' = 1) is performed. For example, if it is 000001, it indicates that a sub-shot of 2Δ(k' = 0) is performed. Each bit value indicates one sub-shot. For example, if it is 111111, it indicates that sub-shots of 32Δ, 16Δ, 8Δ, 4Δ, 2Δ, and 1Δ are performed. If it is 000000, the irradiation time becomes zero.

[0047] Figure 8 is a conceptual diagram showing the internal configuration of the individual blanking control circuit and the common blanking control circuit in Embodiment 1. In Figure 8, each control circuit 41 for individual blanking control, located in the blanking aperture array mechanism 204 within the drawing device 100, is equipped with a shift register 11, a register 42, a register 45, and an amplifier 46. Individual blanking control for each beam is controlled by, for example, a 1-bit control signal. That is, for example, a 1-bit control signal is input and output to the shift register 11, register 42, register 45, and amplifier 46. The small amount of information in the control signal allows for a smaller installation area for the control circuit. In other words, even when the control circuit is located on the blanking aperture array mechanism 204, which has limited installation space, more beams can be arranged with a smaller beam pitch. This increases the amount of current transmitted through the blanking plate, and thus improves the drawing throughput.

[0048] Furthermore, the logic circuit 131 for common blanking houses a register 50, a counter 52, and an amplifier 54. Since this circuit only requires one ON / OFF control and does not perform multiple different controls simultaneously, it avoids issues with installation space and current limitations even when a circuit for high-speed response is required. Therefore, this amplifier 54 operates at a significantly higher speed than the amplifier 46 that can be implemented on the blanking aperture array mechanism 204. This amplifier 54 is controlled, for example, by a 10-bit control signal. That is, for example, a 10-bit control signal is input and output to the register 50 and the counter 52.

[0049] In Embodiment 1, the blanking control of each beam is performed using both beam ON / OFF control by the individual blanking control circuits 41 described above, and beam ON / OFF control by the common blanking control logic circuit 131 that performs blanking control of the entire multi-beam system at once.

[0050] As described above, the shift registers 11 within the same group of control circuits 41 are connected in series. For example, as shown in the example in Figure 6, four shift registers 11 are connected in series for each data sequence (group), and when 1-bit data is transferred in series, four clock signals transfer (transmit) the irradiation time control signals (ON / OFF control data) for each beam to the shift register 11 for each beam within the blanking aperture array mechanism 204.

[0051] Then, upon receiving a read signal from the deflection control circuit 130, the individual register 42 reads and stores an ON / OFF signal according to the stored data (1 bit) for the k-th subshot. Additionally, the deflection control circuit 130 transmits the irradiation time data (10 bits) for the k-th subshot, and the register 50 for common blanking control stores the irradiation time data (10 bits) for the k-th subshot.

[0052] Next, the deflection control circuit 130 outputs the individual shot signal for the k-th subshot to the individual register 45 for all beams. As a result, the individual register 45 for each beam maintains the data stored in the individual register 42 only for the duration that the individual shot signal is ON, and outputs a beam ON signal or beam OFF signal to the individual amplifier 46 according to the maintained ON / OFF signal. Instead of the individual shot signal, a load signal to read and maintain and a reset signal to reset the stored information may be output to the individual register 45. The individual amplifier 46 applies a beam ON voltage or beam OFF voltage to the control electrode 24 according to the input beam ON signal or beam OFF signal. Meanwhile, delayed from the individual shot signal, the deflection control circuit 130 outputs the common shot signal for the k-th subshot to the counter 52 for common blanking control. The counter 52 counts for the duration indicated by the ON / OFF control signal stored in the register 50, and outputs a beam ON signal to the common amplifier 54 during that time. The common amplifier 54 applies a beam ON voltage to the deflector 212 only for the duration that it receives the beam ON signal from the counter 52.

[0053] In the common blanking mechanism, for example, the ON / OFF switching of the individual blanking mechanism 47 is performed after the voltage stabilization time (settling time) S1 / S2 of the amplifier 46 has elapsed. After the individual amplifier is turned ON, the common amplifier 54 is turned ON after the settling time S1 of the individual amplifier 46 when switching from OFF to ON has elapsed. This eliminates beam irradiation with unstable voltage during the rise time of the individual amplifier 46. The common amplifier 54 is then turned OFF when the irradiation time of the target k sub-shot has elapsed. As a result, the actual beam is turned ON and irradiated onto the sample 101 when both the individual amplifier 46 and the common amplifier 54 are ON. Therefore, it is preferable that the ON time of the common amplifier 54 be controlled so that it matches the actual sub-irradiation time of the beam. On the other hand, if the common amplifier 54 is turned ON when the individual amplifier 46 is OFF, it is preferable to turn the common amplifier 54 ON after the individual amplifier 46 has turned OFF, and after the settling time S2 of the individual amplifier 46 when switching from ON to OFF has elapsed. This eliminates the need for beam irradiation with unstable voltages during the falling edge of the individual amplifier 46.

[0054] Furthermore, if the irradiation time of each beam is controlled individually using a counter circuit instead of using a split-shot method, it is not usually necessary to control all beams to the OFF position at once. In such cases, the logic circuit 131 and the common blanking deflector 212 can be omitted. Also, when one shot is divided into multiple subshots, the irradiation time control signal will be transferred for each subshot. On the other hand, the irradiation time control signal transferred to the shift register 11 for each beam can be made into a signal that only selects whether to turn multiple subshots ON or OFF, thus reducing the number of bits of data used in a single transfer.

[0055] Next, a specific example of the operation of the drawing mechanism 150 will be described. The electron beam 200 emitted from the electron gun 201 (emission source) illuminates the entire molded aperture array substrate 203 almost vertically by the illumination lens 202. Multiple rectangular holes 22 (openings) are formed in the molded aperture array substrate 203, and the electron beam 200 illuminates the area containing all of the multiple holes 22. Each portion of the electron beam 200 irradiated at the location of the multiple holes 22 passes through each of the multiple holes 22 in the molded aperture array substrate 203, thereby forming, for example, a rectangular multi-beam (multiple electron beams) 20. These multi-electron beams 20 pass through the corresponding blankers of the blanking aperture array chip 213. Each of these blankers individually blanks the passing beam so that the beam remains ON for a set drawing time (a combination of at least one sub-irradiation time).

[0056] The multi-electron beam 20 that has passed through the blanking aperture array chip 213 is reduced by the reduction lens 205 and travels toward the central hole formed in the limiting aperture substrate 206. Here, the electron beam deflected by the blanker of the blanking aperture array chip 213 is moved away from the central hole in the limiting aperture substrate 206 and is shielded by the limiting aperture substrate 206. On the other hand, the electron beam that has not been deflected by the blanker of the blanking aperture array chip 213 passes through the central hole in the limiting aperture substrate 206 as shown in Figure 1. In this way, the limiting aperture substrate 206 shields each beam that has been deflected by the blanker of the blanking aperture array chip 213 to the beam-OFF state. Then, each beam of one shot is formed by the beam that has passed through the limiting aperture substrate 206 from the time the beam is turned ON until it is turned OFF. The multi-electron beam 20 that has passed through the limiting aperture substrate 206 is focused by the objective lens 207 to form a pattern image with a desired reduction ratio. The entire multi-electron beam 20 that has passed through the limiting aperture substrate 206 is then deflected in the same direction by the deflectors 208 and 209, and each beam is directed to its respective irradiation position on the sample 101. Furthermore, when the XY stage 105 is moving continuously, for example, the deflector 208 performs tracking control so that the irradiation position of the beam follows the movement of the XY stage 105. Ideally, the multi-electron beam 20 irradiated at one time will be arranged at a pitch obtained by multiplying the arrangement pitch of the multiple holes 22 in the molded aperture array substrate 203 by the desired reduction ratio described above.

[0057] Figure 9 is a top view of an example of a blanking aperture array mechanism in Embodiment 1. Figure 10 is a cross-sectional view of an example of a blanking aperture array mechanism in Embodiment 1. In Figures 9 and 10, the mounting substrate 211 supports the blanking aperture array chip 213. Specifically, as shown in Figure 9, the blanking aperture array chip 213 is positioned to cover the opening in the central part of the mounting substrate 211. As shown in Figure 10, the blanking aperture array chip 213 is positioned on the back side of the mounting substrate 211.

[0058] As described above, the multiple control circuits 41 arranged in an array on the membrane region 330 within the blanking aperture array chip 213 are controlled separately in the left and right halves in the x-direction. Furthermore, the left half is further divided into multiple groups within the multiple control circuits 41 arranged in the same row. Similarly, the right half is further divided into multiple groups within the multiple control circuits 41 arranged in the same row. The blanking aperture array chip 213 has control circuits 44 and interface circuits 13 for controlling the multiple groups in the left half located near the outer periphery outside the membrane region 330. Similarly, the blanking aperture array chip 213 has control circuits 44 and interface circuits 13 for controlling the multiple groups in the right half located near the outer periphery outside the membrane region 330.

[0059] Then, a power plane 216 and other signal circuits are formed within the mounting board 211. The power plane 216 supplies power to the blanking aperture array chip 213. The power plane 216, for example, powers the transistors of each logic circuit with voltage Vdd. This will be explained in detail below.

[0060] On the mounting substrate 211, a layer of power plane (surface power supply) 216a, which supplies power to multiple groups of the left half of the blanking aperture array chip 213, a signal line circuit layer (not shown), and an interface circuit 217a are formed on the left side of the blanking aperture array chip 213 in the x-direction. The power plane 216a is connected to the left control circuit 44 via the left interface circuit 13. The power plane 216a functions as a power source for the control circuit 44. In other words, the power plane 216a supplies current to the control circuit 44. The signal line circuit layer (not shown) is connected to the left control circuit 44 via the left interface circuit 13. The signal line circuit layer outputs control signals to the control circuit 44. Power and signals are supplied to the power plane 216a layer and the signal line circuit layer from the deflection control circuit 130 via the interface circuit 217a.

[0061] Similarly, on the mounting substrate 211, a layer of power plane (surface power supply) 216b, which supplies power to multiple groups of the right half of the blanking aperture array chip 213, a signal line circuit layer (not shown), and an interface circuit 217b are formed on the right side of the blanking aperture array chip 213 in the x-direction. The power plane 216a is connected to the right control circuit 44 via the right interface circuit 13. The power plane 216b functions as a power source for the control circuit 44. In other words, the power plane 216b supplies current to the control circuit 44. The signal line circuit layer (not shown) is connected to the right control circuit 44 via the right interface circuit 13. The signal line circuit layer outputs control signals to the control circuit 44. Power and signals are supplied to the power plane 216b layer and the signal line circuit layer from the deflection control circuit 130 via the interface circuit 217b.

[0062] As described above, the shift register 11 is driven to transmit data to each control circuit 41 within the blanking aperture array chip 213. Power is consumed to drive the shift register 11. When the beam is turned ON / OFF, current flows to the amplifier 46 within each control circuit 41. To perform these controls at high speed, a large amount of current may flow at once. Therefore, a power plane 216 is formed within the mounting substrate 211. Here, a magnetic field B is generated by the circuit current (operating current) flowing through the mounting substrate 211 (power plane 216). This causes a misalignment of the multi-electron beam 20.

[0063] Therefore, in Embodiment 1, the positional displacement of the multi-electron beam 20 caused by the magnetic field B resulting from the circuit current (operating current) flowing through the power plane 216 is corrected.

[0064] Figure 11 is a diagram illustrating the positional displacement and correction method of the multi-electron beam in Embodiment 1. The magnetic field B generated by the current flowing through the power plane 216 formed on the mounting substrate 211 of the blanking aperture array mechanism 204 changes the trajectory of the multi-electron beam 20 passing through the blanking aperture array chip 213. If left as is, it will be displaced from the design position P0 to position P1 on the surface of the sample 101. Since the magnetic field B acts on the entire multi-electron beam 20, it can be considered that the entire multi-electron beam 20 is displaced by the same amount in the same direction.

[0065] In Embodiment 1, the multi-electron beam 20 that has passed through the blanking aperture array mechanism 204 is deflected by one or more stages of deflectors 215 (deflectors 214, 219). Specifically, the deflector control circuit 161 controls one or more stages of deflectors 215 (deflectors 214, 219) to correct the positional fluctuations of the multi-electron beam 20 that occur in accordance with the current flowing through the power plane 216. In other words, the trajectory of the multi-electron beam 20 is returned to the trajectory in the absence of a magnetic field B by beam deflection. In the example in Figure 11, the multi-electron beam 20 whose trajectory has shifted is bent in the direction of its original trajectory (the trajectory where no magnetic field is acting) by the first stage deflector 214, and then bent by the second stage deflector 219 to coincide with the original trajectory. When only one stage of deflectors (for example, deflector 214) is used, the multi-electron beam 20 is deflected so that it reaches the design position P0 on the sample surface.

[0066] With the positional displacement actually occurring, the central beam of the multi-electron beam 20 can be used to scan over mark 106, and the position P1 can be measured from the resulting image.

[0067] Here, the deflection amount LΔ (deflection vector) that corrects this positional displacement is defined by P0-P1. Also, the deflection amount ΔL is the deflection voltage L in the x direction of the deflector 214. 1x and the deflection voltage L in the y direction 1y and the x-direction deflection voltage L of the deflector 219 2x and the deflection voltage L in the y direction 2y and the correction coefficient a L ,b L ,c L d L and the correction coefficient a R ,b R ,c R d R Using these, it can be defined by the following equation (1). (1) ΔL=a L L 1x +b L L 1y +c L L 2x +d L L 2y +a R L1x +b R L 1y +c R L 2x +d R L 2y

[0068] Note a L L 1x +b L L 1y +c L L 2x +d L L 2y This indicates the deflection amount used to correct the positional displacement caused by the magnetic field resulting from the current flowing through the left power plane 216a. R L 1x +b R L 1y +c R L 2x +d R L 2y This indicates the deflection amount to correct the positional displacement caused by the magnetic field due to the current flowing through the right-side power plane 216b. Using multiple irradiation pattern data, the operating current, the deflection voltage of each deflector 214, 219, and the deflection amount to correct the positional displacement are measured for each irradiation pattern data. These are then substituted into equation (1) to create these multiple equations. These multiple equations are then solved simultaneously to find the correction coefficient a that best satisfies all of the equations. L ,b L ,c L d L and the correction coefficient a R ,b R ,c R d R And are determined in advance. The obtained correction coefficient information is set in the deflection control circuit 161.

[0069] Figure 12 illustrates an example of a multi-electron beam misalignment in Embodiment 1. Figure 12 shows the irradiation position of the central beam 21 of the multi-electron beam 20 on the sample surface. Compared to the irradiation position in the original trajectory (trajectory without magnetic field acting), the irradiation position of the central beam 21 is shifted, for example, to the lower left (part A) due to the influence of a magnetic field generated on the left side of the mounting substrate 211. The amount of misalignment depends on the current value (operating current) flowing through the power plane 216a on the left side. Similarly, the irradiation position of the central beam 21 is shifted, for example, to the upper right (part B) due to the influence of a magnetic field generated on the right side of the mounting substrate 211. The amount of misalignment depends on the current value (operating current) flowing through the power plane 216b on the right side.

[0070] Figure 13 shows an example of the relationship between operating current and misalignment in Embodiment 1. In Figure 13, the vertical axis shows the misalignment, and the horizontal axis shows the operating current. Figure 13 shows the misalignment in the x-direction and the misalignment in the y-direction. As shown in Figure 13, it can be seen that the misalignment due to the magnetic field B generated by the operating current flowing through the power plane 216 of the mounting substrate 211 depends on this operating current. In the example in Figure 13, as the operating current increases, the misalignment Δx increases, for example, to the negative side. In the power plane 216a shown in Figure 9, most of the current I flows from left to right. In other words, it flows in the x-direction. It does not flow in the y-direction. Or, even if it flows in the y-direction, it remains in a small amount. When the operating current of the left power plane 216a is changed, as shown in Figure 13, it can be seen that in the x-direction where the operating current of the left power plane 216a flows, the beam misalignment Δx changes according to the magnitude of the change in operating current. Conversely, in the y-direction where almost no operating current flows, the change in misalignment Δy is small. Furthermore, the mounting board 211 has power planes that supply power to the transistors of each logic circuit at voltage Vdd, as well as power planes that supply power to the I / O circuits of the signal lines. The I / O circuits have a small difference from the standby current, so their fluctuations are small. On the other hand, the difference from the standby current is large for each logic circuit at voltage Vdd. Therefore, the beam position fluctuations are larger for each logic circuit at voltage Vdd than for the I / O circuits. Thus, it is known that the power plane supplying power to the I / O circuits of the signal lines has a sufficiently small influence compared to the power plane 216 that supplies power to the transistors of each logic circuit at voltage Vdd.

[0071] Therefore, if the operating current value is known for each shot (or each sub-shot in the case of a split-shot method), the amount of deflection (deflection vector) to correct the misalignment can be determined. Here, the operating current changes depending on the ON beam ratio. The ON beam ratio indicates the proportion of beams in the multi-electron beam 20 where sub-shots with the same sub-irradiation time are ON. In the example in Figure 13, the relationship between the operating current and the misalignment amount when the ON beam ratio is between 0 and 50%, and the relationship between the operating current and the misalignment amount when the ON beam ratio is between 50 and 100%, are shown as examples.

[0072] The example in Figure 13 shows the results of measuring the amount of positional displacement when current is passed through the mounting substrate 211 using multiple irradiation pattern data with different ON beam ratios. For example, measurements were taken for ON beam ratios of 0%, 25%, 50%, 75%, and 100%.

[0073] Furthermore, even with subshots of the same ON beam ratio, the operating current may differ depending on the relationship with the preceding and succeeding subshots. For example, if the irradiation time data for a certain beam is 000111, the 32Δ subshot is OFF, the 16Δ subshot is OFF, and the 8Δ subshot is OFF. On the other hand, the 4Δ subshot is ON, the 2Δ subshot is ON, and the 1Δ subshot is ON. Therefore, the current value will change only once between the 8Δ subshot and the 4Δ subshot. In contrast, for example, if the irradiation time data for a certain beam is 101010, the 32Δ subshot is ON, the 16Δ subshot is OFF, the 8Δ subshot is ON, the 4Δ subshot is OFF, the 2Δ subshot is ON, and the 1Δ subshot is OFF. Therefore, ON / OFF cycles repeat with each subshot, and the current value changes each time. In such cases, the operating current may be larger when ON / OFF cycles repeat, even with subshots of the same ON beam ratio.

[0074] Figure 14 is a conceptual diagram illustrating an example of the drawing operation in Embodiment 1. As shown in Figure 14, the drawing area 30 (thick line) of the sample 101 is defined based on the position of the alignment mark 14. The drawing area 30 (thick line) is virtually divided into multiple stripe-shaped areas 32 with a predetermined width in the y-direction, for example. In the example in Figure 14, the drawing area 30 of the sample 101 is shown to be divided into multiple stripe areas 32 with a width size that is substantially the same as the size of the designed irradiation area 34 (drawing field) that can be irradiated with a single irradiation of the multi-electron beam 20, for example in the y-direction.

[0075] First, the XY stage 105 is moved to adjust the position of the irradiation area 34 of the multi-electron beam 20 to the left edge of the first stripe area 32, or even further to the left, and the first stripe area 32 is drawn. When drawing the first stripe area 32, the drawing progresses relatively in the x direction by moving the XY stage 105, for example, in the -x direction. The XY stage 105 is moved continuously at a constant speed, for example. After the drawing of the first stripe area 32 is completed, the stage position is moved in the -y direction by the width of the stripe area 32.

[0076] Next, the irradiation area 34 of the multi-electron beam 20 is adjusted to be located at the left edge of the second stripe area 32, or even further to the left, and the drawing of the second stripe area 32 is performed by moving the XY stage 105, for example, in the -x direction, thereby relatively advancing the drawing in the x direction.

[0077] Furthermore, while the example in Figure 14 shows the case where each stripe region 32 is drawn in the same direction, this is not the only option. For example, for the stripe region 32 to be drawn after the stripe region 32 drawn in the x direction, the XY stage 105 can be moved, for example, in the x direction, so that the drawing is performed in the -x direction. By drawing while alternating directions in this way, the stage movement time can be shortened, and consequently, the drawing time can be shortened. In a single shot, the multi-electron beam 20 formed by passing through each hole 22 of the molded aperture array substrate 203 forms up to the same number of shot patterns as each hole 22 at once.

[0078] Furthermore, while the example in Figure 14 shows a case where the stage is moved once for the drawing process of each stripe area, this is not the only option. It is also preferable to perform multiple drawing so that the stage moves N times (where N is an integer of 2 or more) over the same position. In that case, for example, it is preferable to perform multiple drawing while shifting in the y direction by an amount equal to 1 / N of the width of the stripe area.

[0079] Figure 15 shows an example of the irradiation area and drawing target pixels in Embodiment 1. In Figure 15, the stripe area 32 is divided into multiple mesh areas, for example, by the beam size of the multi-electron beam 20. Each of these mesh areas becomes a drawing target pixel 36 (unit irradiation area, irradiation position, or drawing position). The size of the drawing target pixel 36 is not limited to the beam size and may be composed of any size regardless of the beam size. For example, it may be composed of a size of 1 / n (where n is an integer of 1 or more) of the beam size. In the example of Figure 15, the drawing area of ​​the sample 101 is shown as being divided into multiple stripe areas 32 in the y direction, for example, with a width size that is substantially the same as the size of the irradiation area 34 (drawing field) that can be irradiated with one irradiation of the multi-electron beam 20. The size of the rectangular irradiation area 34 in the x direction can be defined by the number of beams in the x direction × the beam pitch in the x direction. The size of the rectangular irradiation area 34 in the y direction can be defined by the number of beams in the y direction × the beam pitch in the y direction. In the example in Figure 15, for example, a 512x512-row multibeam is shown as an 8x8-row multibeam. Within the irradiation area 34, multiple pixels 28 (beam drawing positions) that can be irradiated with a single shot of the multi-electron beam 20 are shown. The pitch between adjacent pixels 28 becomes the pitch between each beam of the multibeam. A rectangular region enclosed by the beam pitch size in the x and y directions constitutes one sub-irradiation area 29 (pitch cell). In the example in Figure 15, each sub-irradiation area 29 is shown as being composed of, for example, 4x4 pixels.

[0080] As part of the shot data generation process, the shot data generation unit 70 first generates shot data for each pixel 36. Specifically, it operates as follows: First, the shot data generation unit 70 reads drawing data from the storage device 140 and calculates the pattern area density ρ' within each pixel 36. This process is performed, for example, for each stripe region 32.

[0081] Next, the shot data generation unit 70 first virtually divides the drawing area (in this case, for example, the stripe area 32) into a mesh of a predetermined size into multiple adjacent mesh areas (mesh areas for calculating proximity effect correction). The size of the adjacent mesh area is preferably set to about 1 / 10 of the area affected by the proximity effect, for example, about 1 μm. The shot data generation unit 70 reads the drawing data from the storage device 140 and calculates the pattern area density ρ″ of the patterns placed within each adjacent mesh area.

[0082] Next, the shot data generation unit 70 calculates a proximity effect correction dose Dp(x) for each adjacent mesh region to correct for the proximity effect. The unknown proximity effect correction dose Dp(x) can be defined by a threshold model for proximity effect correction similar to conventional methods, using the backscattering coefficient η, the dose threshold Dth of the threshold model, the pattern area density ρ″, and the distribution function g(x). The proximity effect correction dose Dp(x) is defined as a relative value normalized with the reference dose Dbase set to 1.

[0083] Next, the shot data generation unit 70 calculates the incident irradiation amount D(x) (dose amount) for each pixel 36. The incident irradiation amount D(x) can be calculated, for example, by multiplying the reference irradiation amount Dbase by the proximity effect correction irradiation amount Dp and the pattern area density ρ'. The reference irradiation amount Dbase can be defined, for example, as Dth / (1 / 2+η). As a result, an incident irradiation amount D(x) for each pixel 36, corrected for proximity effects, can be obtained based on the layout of multiple graphic patterns defined in the drawing data.

[0084] Next, the shot data generation unit 70 calculates the irradiation time for each pixel 36. The irradiation time for each pixel 36 can be calculated by dividing the incident irradiation amount D(x) for that pixel by the current density J.

[0085] As a data processing step, the data processing unit 72 rearranges the irradiation time data for each of the obtained pixels 36 in shot order and stores it in the storage device 142. The transfer processing unit 74 transfers the irradiation pattern data, which is a collection of bit data corresponding to the sub-shot order from the irradiation time data of the pixels targeted by the shot, to the deflection control circuit 130.

[0086] As part of the drawing process, the deflection control circuit 130 outputs irradiation pattern data in sub-shot order to the blanking aperture array mechanism 204 and controls the blanking aperture array mechanism 204. The deflection control circuit 130 also generates 10-bit data for each sub-shot of the divided shot and outputs it to the logic circuit 131 in sub-shot order and controls the logic circuit 131. Furthermore, for each shot, the deflection control circuit 130 outputs deflection data that deflects the multi-electron beam 20 to the irradiation position to the DAC amplifier units 132 and 134.

[0087] Furthermore, the deflection control circuit 130 outputs irradiation pattern data to the blanking aperture array mechanism 204 in parallel to the deflector control circuit 161. Within the deflector control circuit 161, a dummy circuit 62 receives the irradiation pattern data as input and is controlled by the irradiation pattern data. In other words, the dummy circuit 62 receives the irradiation pattern data as input and performs the same operation as the circuit in the blanking aperture array mechanism 204.

[0088] Then, the current measurement unit 64 (an example of a current prediction unit (current acquisition unit)) acquires the current flowing through the power plane 216. Specifically, the current measurement unit 64 measures the current flowing through the power plane (not shown) of the dummy circuit 62 as the dummy circuit 62 is controlled by the irradiation pattern data. This allows the current flowing through the power plane 216 of the mounting board 211 to be predicted.

[0089] Then, under the control of the drawing control unit 76, the drawing mechanism 150 moves the XY stage 105 and draws a pattern on the sample 101 on the XY stage 105 using the multi-electron beam 20. In multi-beam drawing, irradiation time data for areas to be drawn later is generated in parallel with the drawing process. For example, while drawing the k-th stripe area 32, shot data for the k+2-th stripe area 32 is generated in parallel. This operation is repeated to draw all stripe areas 32.

[0090] Figure 16 is a diagram illustrating an example of multi-beam drawing operation in Embodiment 1. In the example in Figure 16, each sub-irradiation region 29 enclosed by the beam pitch, including one beam irradiation position of each of the multi-electron beams 20, is drawn with four different beams. Furthermore, in the example in Figure 16, while drawing 1 / 4 (1 / 2 of the number of beams used for irradiation) of each sub-irradiation region 29, the XY stage 105 moves continuously at a speed that moves, for example, by a distance of 8 beam pitches. In the example in Figure 16, each sub-irradiation region 29 is composed of, for example, 4x4 pixels.

[0091] In the drawing operation shown in the example in Figure 16, for example, while the XY stage 105 moves a distance of 8 beam pitches in the x direction, the deflector 209 sequentially shifts the irradiation position (pixel 36), and four shots of the multi-electron beam 20 are taken in a shot cycle T to draw (expose) four different pixels 36 within the same sub-irradiation area 29. Each shot consists of a combination of at least one sub-shot, as described above. While the four pixels 36 are being drawn (exposed), the entire multi-electron beam 20 is deflected collectively by the deflector 208 to prevent the irradiation area 34 from shifting relative to the sample 101 due to the movement of the XY stage 105, thereby causing the irradiation area 34 to follow the movement of the XY stage 105. In other words, tracking control is performed. After one tracking cycle is completed, the tracking is reset and returned to the previous tracking start position. Since the drawing of the first pixel row from the left of each sub-irradiation area 29 has been completed, after the tracking reset, in the next tracking cycle, the deflector 209 first deflects the beam to align (shift) a different drawing position from the first pixel row so that the undrawn, for example, the second pixel row from the left of each sub-irradiation area 29 is drawn. By repeating this operation while the stripe area 32 is being drawn, the position of the irradiation area 34 (34a~34o) of the multi-electron beam 20 moves sequentially, as shown in the lower part of Figure 14, and drawing is performed.

[0092] In each of these sub-shots, the blanking aperture array mechanism 204 controls the multi-electron beam to switch individually between a beam-on state and a beam-off state based on the irradiation pattern data. At that time, the current flowing through the power plane 216 is measured (predicted) by the current measurement unit 64.

[0093] The deflection control unit 60 calculates a deflection amount ΔL to correct the misalignment from the measured current value. The deflection amount ΔL can be obtained by referring to the relationship in Figure 13 and reversing the sign of the obtained misalignment amount (misalignment vector) (reversing the direction of the vector). The deflection control unit 60 then calculates the deflection voltage of the deflectors 214 and 219 according to the deflection amount ΔL. Specifically, the set correction coefficient a L ,b L ,c L d L and the correction coefficient a R ,b R ,c R d RThe deflection amount ΔL is input into equation (1) using and the deflection voltages of deflectors 214 and 219 that satisfy equation (1) are calculated.

[0094] The deflection control unit 60 controls one or more deflectors 215 (deflectors 214, 219) for each sub-shot to correct the position fluctuations of the multi-electron beam 20 that occur in accordance with the current flowing through the power plane 216. The one or more deflectors 215 (deflectors 214, 219) then deflect the multi-electron beam 20 for each sub-shot to correct the position fluctuations of the multi-electron beam 20 that occur in accordance with the current flowing through the power plane 216.

[0095] Alternatively, using multiple irradiation pattern data, the operating current for each irradiation pattern data, the deflection angle ratio of each deflector 214, 219, and the deflection amount ΔL (deflection vector) for correcting the positional misalignment are measured. It is also preferable to pre-determine the relationship between the deflection amount ΔL (deflection vector) and the deflection angle ratio of the deflectors 214, 219, and set this relationship between the deflection amount ΔL and the deflection angle ratio in the deflector control circuit 161. For example, a correction coefficient is obtained by fitting the relationship between the deflection amount ΔL and the deflection angle ratio with a polynomial, and this is set in the deflector control circuit 161. In this case, the deflection control unit 60 may control the deflectors 214, 219 with a deflection angle ratio corresponding to the deflection amount ΔL.

[0096] Then, the remaining electron optical system 151, excluding the one or more deflectors 215, irradiates the sample 101 with a multi-electron beam 20 whose positional variation has been corrected.

[0097] Here, as mentioned above, a multipole magnetic field may be generated as magnetic field B. This may cause astigmatism in the multi-electron beam 20. Here, magnetic field B may include various multipole magnetic fields. The major influences are expected to be the deflection magnetic field (dipole field) and / or the magnetic field of the astigmatism corrector (quadrupole field). However, the arrangement relationship between the location where the quadrupole magnetic field is generated and the location where a normal astigmatism corrector is installed differs from that of the optical system. Therefore, it is also preferable to superimpose a quadrupole field on the deflection field of one or more stages of deflectors 215 (deflectors 214, 219). This makes it possible to correct distortions such as astigmatism in the multi-electron beam 20. In this case, it is preferable that one or more stages of deflectors 215 (deflectors 214, 219) be configured with four or more poles. For example, it is preferable that they be configured with eight electrodes.

[0098] Figure 17 shows an example of the configuration of the drawing device in a modified example of Embodiment 1. In Figure 17, the functions of the single-stage or more deflectors 215 (deflectors 214, 219) are combined by the deflectors 208, 209. Therefore, it is the same as Figure 1 except that the single-stage or more deflectors 215 (deflectors 214, 219) and the DAC amplifier units 162, 164 have been removed. Specifically, for example, deflector 209 also performs the function of deflector 214. Similarly, deflector 208 also performs the function of deflector 219. In other words, one or more deflectors 215 (deflectors 214, 219) also function as objective deflectors 208, 209, which deflect the multi-electron beam 20 to a desired position on the sample 101.

[0099] Therefore, for each sub-shot, the deflection control unit 60 outputs a signal of the deflection voltage to be applied to deflector 214 to the DAC amplifier unit 132 so that the deflection voltage to be applied to deflector 214 is added to the deflection voltage to be applied to deflector 209. Similarly, for each sub-shot, the deflection control unit 60 outputs a signal of the deflection voltage to be applied to deflector 219 to the DAC amplifier unit 134 so that the deflection voltage to be applied to deflector 219 is added to the deflection voltage to be applied to deflector 208.

[0100] Then, for each sub-shot, the deflectors 208 and 209 deflect the multi-electron beam 20 to its original irradiation position and also deflect the multi-electron beam 20 to correct for positional fluctuations of the multi-electron beam 20 caused by the current flowing through the power plane 216.

[0101] Thus, existing deflectors 208 and 209 may be used to correct the positional fluctuations of the multi-electron beam 20 that occur in accordance with the current flowing through the power plane 216.

[0102] As described above, according to Embodiment 1, the positional fluctuation of the multi-electron beam 20 due to the magnetic field B generated by the circuit current (operating current) flowing through the mounting substrate 211 on which the blanking aperture array chip 213 through which the multi-electron beam 20 passes can be corrected.

[0103] Embodiment 2. Embodiment 1 describes a case in which the circuit current (operating current) flowing through the mounting substrate 211 is predicted by the deflection control circuit 161 using a dummy circuit, but it is not limited to this. Embodiment 2 describes a configuration in which the circuit current (operating current) flowing through the mounting substrate 211 is measured within the deflection control circuit 130 that controls the blanking aperture array mechanism 204. The following is the same as Embodiment 1 except for the points that are not specifically described.

[0104] Figure 18 shows an example of the configuration of the drawing device in Embodiment 2. In Figure 18, the configuration is the same as in Figure 1, except that a current measuring unit 84 is placed in the deflection control circuit 130 in addition to the deflection control unit 80 which performs the functions of the deflection control circuit 130 of Embodiment 1, and the deflector control circuit 161 performs the functions of the deflection control unit 60 of Embodiment 1, and the dummy circuit 62 and current measuring unit 64 are omitted. The deflection control unit 80 and the current measurement unit 84 each have a processing circuit. Such a processing circuit includes, for example, an electrical circuit, a computer, a processor, a circuit board, a quantum circuit, or a semiconductor device. The deflection control unit 80 and the current measurement unit 84 may use a common processing circuit (the same processing circuit) or they may use different processing circuits (separate processing circuits). Information input to and output from the deflection control unit 80 and the current measurement unit 84, as well as information being calculated, is stored each time in a memory (not shown) within the deflection control circuit 130.

[0105] The contents of each step until the irradiation pattern data is transferred to the deflection control circuit 130 in sub-shot order are the same as in Embodiment 1.

[0106] As part of the drawing process, the deflection control circuit 130 outputs irradiation pattern data in sub-shot order to the blanking aperture array mechanism 204 and controls the blanking aperture array mechanism 204. The deflection control circuit 130 also generates 10-bit data for each sub-shot of the divided shot and outputs it to the logic circuit 131 in sub-shot order and controls the logic circuit 131. Furthermore, for each shot, the deflection control circuit 130 outputs deflection data that deflects the multi-electron beam 20 to the irradiation position to the DAC amplifier units 132 and 134.

[0107] Then, the current measurement unit 84 (an example of a current prediction unit (current acquisition unit)) acquires the current flowing through the power plane 216. Specifically, the current measurement unit 84 measures the current flowing from the deflection control circuit 130 to the power plane 216.

[0108] Furthermore, the deflection control circuit 130 outputs the measured value of the current flowing through the power plane 216 to the deflector control circuit 161.

[0109] Then, under the control of the drawing control unit 76, the drawing mechanism 150 moves the XY stage 105 and draws a pattern on the sample 101 on the XY stage 105 using the multi-electron beam 20.

[0110] At that time, the deflector control circuit 161 calculates the deflection amount ΔL to correct the positional misalignment from the measured current value. The deflection amount ΔL can be determined by referring to the relationship in Figure 13. Then, the deflector control circuit 161 calculates the deflection voltage of the deflectors 214 and 219 according to the deflection amount ΔL, similar to the first embodiment.

[0111] The deflector control circuit 161 controls one or more deflectors 215 (deflectors 214, 219) for each sub-shot to correct the position fluctuation of the multi-electron beam 20 that occurs in accordance with the current flowing through the power plane 216. The one or more deflectors 215 (deflectors 214, 219) then deflect the multi-electron beam 20 for each sub-shot to correct the position fluctuation of the multi-electron beam 20 that occurs in accordance with the current flowing through the power plane 216. Alternatively, the deflector control circuit 161 may control the deflectors 214, 219 with a deflection angle ratio corresponding to the deflection amount ΔL, as in Embodiment 1.

[0112] Furthermore, similar to the modification of Embodiment 1, it is also preferable to configure the deflectors 208, 209, which are objective deflectors that deflect the multi-electron beam 20 to a desired position on the sample 101, to perform the functions of one or more deflectors 215 (deflectors 214, 219). In other words, one or more deflectors 208, 209 perform both the function of deflecting the multi-electron beam 20 to correct positional fluctuations of the multi-electron beam 20 that occur in accordance with the current flowing through the power plane 216, and the function of an objective deflector that deflects the multi-electron beam 20 to a desired position on the sample 101.

[0113] Furthermore, similar to Embodiment 1, it is also preferable to superimpose a quadrupole field onto the deflection field of one or more deflectors 215 (deflectors 214, 219).

[0114] As described above, according to Embodiment 2, the circuit current (operating current) flowing through the mounting substrate 211 on which the blanking aperture array chip 213 through which the multi-electron beam 20 passes is located is measured in the deflection control circuit 130 and transmitted to the deflector control circuit 161. This makes it possible to correct the positional fluctuation of the multi-electron beam 20 caused by the magnetic field B generated by this circuit current (operating current).

[0115] Embodiment 3. Embodiment 3 describes a configuration in which the circuit current (operating current) flowing through the mounting board 211 is measured (predicted) within the control computer 110. The details below are the same as in Embodiment 1, except for the points specifically described.

[0116] Figure 19 shows an example of the configuration of the drawing device in Embodiment 3. In Figure 19, the configuration is the same as in Figure 1, except that a current calculation unit 78 is added to the control computer 110, and the deflector control circuit 161 performs the function of the deflection control unit 60 of Embodiment 1, and the dummy circuit 62 and current measurement unit 64 are omitted.

[0117] Each of the "~ section," such as the shot data generation section 70, data processing section 72, transfer processing section 74, drawing control section 76, and current calculation section 78, has a processing circuit. Such processing circuits include, for example, electrical circuits, computers, processors, circuit boards, quantum circuits, or semiconductor devices. Each of the "~ section" may use a common processing circuit (the same processing circuit) or different processing circuits (separate processing circuits). Information input to and output from the shot data generation section 70, data processing section 72, transfer processing section 74, drawing control section 76, and current calculation section 78, as well as information being calculated, is stored in the memory 112 each time.

[0118] The contents of each step until the irradiation pattern data is transferred to the deflection control circuit 130 in sub-shot order are the same as in Embodiment 1.

[0119] The current calculation unit 78 (an example of a current prediction unit (current acquisition unit)) acquires the current flowing to the power plane 216. Specifically, for each sub-shot, the current calculation unit 78 calculates (predicts) the current flowing from the deflection control circuit 130 to the power plane 216 based on the irradiation pattern data. Specifically, using multiple irradiation pattern data, the current actually flowing from the deflection control circuit 130 to the power plane 216 is measured in advance, and relationship data between the irradiation pattern data and the current is measured. Then, the relationship between the irradiation pattern data and the current is fitted with a polynomial, and the resulting coefficients are stored in the memory device 142 or the like. The current calculation unit 78 uses this polynomial of coefficients to calculate a current value corresponding to the irradiation pattern data. The calculated (predicted) current value is output to the deflector control circuit 161.

[0120] As part of the drawing process, the deflection control circuit 130 outputs irradiation pattern data in sub-shot order to the blanking aperture array mechanism 204 and controls the blanking aperture array mechanism 204. The deflection control circuit 130 also generates 10-bit data for each sub-shot of the divided shot and outputs it to the logic circuit 131 in sub-shot order and controls the logic circuit 131. Furthermore, for each shot, the deflection control circuit 130 outputs deflection data that deflects the multi-electron beam 20 to the irradiation position to the DAC amplifier units 132 and 134.

[0121] Then, under the control of the drawing control unit 76, the drawing mechanism 150 moves the XY stage 105 and draws a pattern on the sample 101 on the XY stage 105 using the multi-electron beam 20.

[0122] At that time, the deflector control circuit 161 calculates the deflection amount ΔL to correct the positional deviation from the calculated (predicted) current value. The deflection amount ΔL can be determined by referring to the relationship in Figure 13. Then, the deflector control circuit 161 calculates the deflection voltage of the deflectors 214 and 219 according to the deflection amount ΔL, similar to the first embodiment.

[0123] The deflector control circuit 161 controls one or more deflectors 215 (deflectors 214, 219) for each sub-shot to correct the position fluctuation of the multi-electron beam 20 that occurs in accordance with the current flowing through the power plane 216. The one or more deflectors 215 (deflectors 214, 219) then deflect the multi-electron beam 20 for each sub-shot to correct the position fluctuation of the multi-electron beam 20 that occurs in accordance with the current flowing through the power plane 216. Alternatively, the deflector control circuit 161 may control the deflectors 214, 219 with a deflection angle ratio corresponding to the deflection amount ΔL, as in Embodiment 1.

[0124] Furthermore, similar to the modification of Embodiment 1, it is also preferable to configure the deflectors 208, 209, which are objective deflectors that deflect the multi-electron beam 20 to a desired position on the sample 101, to perform the functions of one or more deflectors 215 (deflectors 214, 219). In other words, one or more deflectors 208, 209 perform both the function of deflecting the multi-electron beam 20 to correct positional fluctuations of the multi-electron beam 20 that occur in accordance with the current flowing through the power plane 216, and the function of an objective deflector that deflects the multi-electron beam 20 to a desired position on the sample 101.

[0125] Furthermore, similar to Embodiment 1, it is also preferable to superimpose a quadrupole field onto the deflection field of one or more deflectors 215 (deflectors 214, 219).

[0126] As described above, according to Embodiment 3, the control computer 110 that generates irradiation pattern data calculates (predicts) the circuit current (operating current) flowing through the mounting substrate 211 and transmits this to the deflector control circuit 161. This makes it possible to correct the positional fluctuation of the multi-electron beam 20 caused by the magnetic field B generated by this circuit current (operating current).

[0127] Embodiment 4. In the embodiments described above, we explained cases in which a correction amount (deflection amount), etc., is calculated in real time during the actual drawing process to correct for the positional fluctuation of the multi-electron beam 20 caused by the magnetic field B generated by the circuit current (operating current), but this is not the only case. Embodiment 4 describes a configuration in which the correction amount is calculated offline in advance before performing the drawing process. The following is the same as Embodiment 1, except for the points that are not specifically explained.

[0128] Figure 20 shows an example of the configuration of the drawing device in Embodiment 4. In Figure 20, the configuration is the same as in Figure 1, except that a storage device 144 such as a magnetic disk drive is added, and the deflector control circuit 161 performs the function of the deflection control unit 60 in Embodiment 1, and the dummy circuit 62 and current measuring unit 64 are omitted.

[0129] In Embodiment 4, offline, a correction amount is calculated to compensate for the positional fluctuations of the multi-electron beam 20 that occur in accordance with the current flowing through the power plane 216, in the order of the shots (in this case, the order of the sub-shots). Then, correction amount information defining this correction amount is created. The created correction amount information is input to the lithography device 100, for example, from an external source, and stored in the storage device 144. This correction amount information may also be created within the lithography device 100.

[0130] The correction amount is preferably calculated as, for example, a deflection amount ΔL to correct for positional misalignment. Specifically, offline, irradiation time data for each pixel 36 is generated in advance, and irradiation pattern data in sub-shot order is generated. Then, for example, using this irradiation pattern data, the current flowing from the deflection control circuit 130 to the power plane 216 is calculated (predicted) for each sub-shot. The calculation method is the same as in Embodiment 3. Then, the deflection amount ΔL to correct for positional misalignment is calculated from the calculated (predicted) current value.

[0131] Alternatively, it may be calculated as the current value flowing from the deflection control circuit 130 to the power plane 216. Alternatively, it is also preferable to calculate it as the deflection voltage data of one or more deflectors 215 (deflectors 214, 219).

[0132] Then, under the control of the drawing control unit 76, the drawing mechanism 150 moves the XY stage 105 and draws a pattern on the sample 101 on the XY stage 105 using the multi-electron beam 20.

[0133] At that time, the deflector control circuit 161 refers to the correction amount information stored in the storage device 144 and uses the deflection amount ΔL (correction amount) defined in the correction amount information to calculate the deflection voltage of the deflectors 214 and 219 according to the deflection amount ΔL, similar to Embodiment 1.

[0134] The deflector control circuit 161 controls one or more deflectors 215 (deflectors 214, 219) for each sub-shot to correct the position fluctuation of the multi-electron beam 20 that occurs in accordance with the current flowing through the power plane 216. In other words, the deflector control circuit 161 refers to the correction amount information and controls one or more deflectors 215 (deflectors 214, 219) for each shot (in this case, each sub-shot) using the correction amount for that sub-shot to correct the position fluctuation of the multi-electron beam 20 that occurs in accordance with the current flowing through the power plane 216. Then, one or more deflectors 215 (deflectors 214, 219) deflect the multi-electron beam 20 for each sub-shot to correct the position fluctuation of the multi-electron beam 20 that occurs in accordance with the current flowing through the power plane 216. Alternatively, the deflector control circuit 161 may control the deflectors 214, 219 with a deflection angle ratio corresponding to the deflection amount ΔL, similar to Embodiment 1.

[0135] Furthermore, similar to the modification of Embodiment 1, it is also preferable to configure the deflectors 208, 209, which are objective deflectors that deflect the multi-electron beam 20 to a desired position on the sample 101, to perform the functions of one or more deflectors 215 (deflectors 214, 219). In other words, one or more deflectors 208, 209 perform both the function of deflecting the multi-electron beam 20 to correct positional fluctuations of the multi-electron beam 20 that occur in accordance with the current flowing through the power plane 216, and the function of an objective deflector that deflects the multi-electron beam 20 to a desired position on the sample 101.

[0136] Furthermore, similar to Embodiment 1, it is also preferable to superimpose a quadrupole field onto the deflection field of one or more deflectors 215 (deflectors 214, 219).

[0137] As described above, according to Embodiment 4, the correction amount is calculated offline in advance and transmitted to the deflector control circuit 161. This makes it possible to correct the positional fluctuation of the multi-electron beam 20 caused by the magnetic field B generated by the circuit current (operating current).

[0138] Embodiment 5. Figure 21 is a conceptual diagram showing the configuration of the lithography apparatus in Embodiment 5. In the example of Figure 21, it is the same as in Figure 1, except that one or more deflectors 215 (deflectors 214, 219) are placed between the limiting aperture substrate 206 and the sample 101. Thus, the one or more deflectors 208, 209 do not also have the function of deflecting the multi-electron beam 20 to correct the position fluctuation of the multi-electron beam 20 that occurs in accordance with the current flowing through the power plane 216, and the one or more deflectors 215 (deflectors 214, 219) may be placed, for example, near the deflectors 208, 209. Furthermore, in the embodiments 2 to 4 described above, one or more deflectors 215 (deflectors 214, 219) may also be placed between the limiting aperture substrate 206 and the sample 101.

[0139] The embodiments have been described above with reference to specific examples. However, the present invention is not limited to these specific examples.

[0140] Furthermore, while descriptions of the device configuration, control methods, and other parts not directly necessary for explaining the present invention have been omitted, it goes without saying that the necessary device configuration and control methods can be appropriately selected and used. For example, although the control unit configuration for controlling the drawing device 100 has been omitted, it goes without saying that the necessary control unit configuration can be appropriately selected and used.

[0141] Furthermore, all multi-charged particle beam lithography apparatuses that incorporate elements of the present invention and can be appropriately modified by those skilled in the art are included within the scope of the present invention. [Explanation of Symbols]

[0142] 11 Shift register 13 Interface Circuit 14 Alignment Marks 20 Multi-electron beam 21 Central beam 22 holes 24 control electrodes 25 Passing hole 26 Counter electrode 29 Sub-irradiation area 30 drawing area 31. Blanking aperture array substrate 32 Stripe Area 34 Irradiation area 36 pixels 41 Control circuits 42 registers 44 Control circuits 45 registers 46 Amplifier 47 Individual blanking mechanism 50 registers 52 counters 54 Amplifier 60 Deflection control section 62 Dummy Circuits 64 Current measurement section 70 Shot data generation unit 72 Data Processing Department 74 Transfer Processing Unit 76 Drawing Control Unit 78 Current Calculation Unit 80 Deflection control section 84 Current measurement section 100 drawing device 101 samples 102 Electronic Microscope Tube 103 Drawing room 105 XY Stages 106 Mark 110 Control Computer 112 memory 130 Deflection control circuit 131 Logic Circuits 132,134 DAC Amplifier Unit 136 Lens control circuit 138 Stage control mechanism 139 Stage position measuring instrument 140,142,144 Storage device 150 Drawing mechanism 151 Electron optical system 160 Control System Circuits 161 Deflector control circuit 162,164 DAC Amplifier Unit 200 electron beam 201 Electron Gun 202 Illumination Lens 203 Molded aperture array substrate 204 Blanking Aperture Array Mechanism 205 Reduction Lens 206 Limiting Aperture Substrate 207 Objective lens 208 Deflector 209 Deflector 210 Mirror 211 Mounting board 212 Deflector 213 Blanking Aperture Array Chip 214,215,219 Deflector 216 Power Plane 217 Interface Circuit 330 Membrane area 343 pads

Claims

1. A blanking aperture array chip having multiple blankers that individually switch an incident multi-charged particle beam between a beam ON state and a beam OFF state by beam deflection, A mounting substrate having a power plane formed on it that supports the blanking aperture array chip and supplies power to the blanking aperture array chip, A blanking aperture array mechanism having, A limiting aperture substrate that shields the beam in the beam-off state of the multi-charged particle beam that has passed through the blanking aperture array mechanism, A current acquisition unit that acquires the current flowing through the power plane, A single or more deflectors for deflecting a multi-charged particle beam that has passed through the blanking aperture array mechanism, A deflector control circuit controls the one or more deflectors to correct the position fluctuation of the multi-charged particle beam that occurs in accordance with the current flowing through the power plane, A stage on which the sample is placed, An electron optical system that irradiates the sample with the multi-charged particle beam whose positional variation has been corrected, A multi-charged particle beam lithography apparatus characterized by being equipped with the following features.

2. The system further comprises a deflection control circuit for controlling the blanking aperture array mechanism, The multi-charged particle beam lithography apparatus according to claim 1, characterized in that the deflection control circuit has a current measurement unit which serves as the current acquisition unit, disposed within the deflection control circuit, and measures the current flowing from the deflection control circuit to the power plane.

3. The system further comprises a deflection control circuit for controlling the blanking aperture array mechanism, The deflection control circuit outputs irradiation pattern data to the blanking aperture array mechanism. The blanking aperture array mechanism controls the switching of the multi-charged particle beam individually between a beam ON state and a beam OFF state based on the irradiation pattern data. The deflector control circuit is, A dummy circuit having the same circuit configuration as the circuit in the blanking aperture array mechanism, which receives the irradiation pattern data and is controlled by the irradiation pattern data, The current acquisition unit, which is a current prediction unit, predicts the current flowing through the power plane of the dummy circuit by measuring the current flowing through the power plane of the dummy circuit as the dummy circuit is controlled by the irradiation pattern data, A multi-charged particle beam lithography apparatus according to claim 1, characterized by having the following features.

4. A storage device for storing drawing data for drawing the aforementioned sample, A control computer that converts the aforementioned drawing data into irradiation pattern data, Furthermore, The control computer further calculates the current flowing through the power plane based on the irradiation pattern data, as the current acquisition unit. The multi-charged particle beam lithography apparatus according to claim 1, characterized in that it is as described above.

5. A blanking aperture array chip having multiple blankers that individually switch an incident multi-charged particle beam between a beam ON state and a beam OFF state by beam deflection, A mounting substrate having a power plane formed on it that supports the blanking aperture array chip and supplies power to the blanking aperture array chip, A blanking aperture array mechanism having, A limiting aperture substrate that shields the beam in the beam-off state of the multi-charged particle beam that has passed through the blanking aperture array mechanism, A single or more deflectors for deflecting a multi-charged particle beam that has passed through the blanking aperture array mechanism, A storage device that stores correction amount information, which defines a correction amount calculated offline in advance to correct the positional variation of the multi-charged particle beam that occurs in accordance with the current flowing through the power plane in the order of shots, A deflector control circuit controls the one or more deflectors so as to correct the position fluctuation of the multi-charged particle beam that occurs in accordance with the current flowing through the power plane, using the correction amount for each shot, with reference to the correction amount information, A stage on which the sample is placed, An electron optical system that irradiates the sample with the multi-charged particle beam whose positional variation has been corrected, A multi-charged particle beam lithography apparatus characterized by being equipped with the following features.

6. The multi-charged particle beam lithography apparatus according to any one of claims 1 to 5, characterized in that the one or more deflectors are arranged between the blanking aperture array mechanism and the limiting aperture substrate.

7. The multi-charged particle beam lithography apparatus according to any one of claims 1 to 5, characterized in that the one or more deflectors also serve as objective deflectors for deflecting the multi-charged particle beam to a desired position on the sample.

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