Semiconductor device, method for manufacturing a semiconductor device, imaging device, radiation imaging system, equipment

Abstract

In semiconductor devices where semiconductor chips and circuit boards are connected by wires, there has been a need for a technology that can suitably protect the wires using resin. [Solution] A first substrate having an effective element region and a first electrode is mounted on a second substrate having a second electrode and an electrical circuit, the first electrode and the second electrode are electrically connected by wiring, and the wiring is covered with a resin component. The covering includes the steps of placing a first resin component on the outer edge side of the first substrate beyond the effective element region and curing it, placing a second resin component on the outer edge side of the second substrate beyond the position where the first substrate is mounted and curing it, and placing a third resin component having a viscosity lower than the viscosity of the first component before curing and the viscosity of the second component before curing between the cured first component and the cured second component and curing it.

Description

Technical Field

[0001] The present invention relates to a semiconductor device in which a semiconductor chip and a circuit board are electrically connected by wire bonding, a method for manufacturing the semiconductor device, and the like.

Background Art

[0002] When mounting a semiconductor chip on a circuit board, a method of making connections such as electrical signals and power supplies using wire bonding is known. In order to prevent peeling and disconnection of the connected wires, a method of sealing the entire semiconductor chip and wires with resin after connecting the wires is known.

[0003] According to the method described in Patent Document 1, after connecting the lands of the semiconductor chip mounted on the substrate and the electrodes of the substrate with bonding wires, a reinforcing resin is applied and cured so as to contact the wires. After stabilizing the position of the wires with the reinforcing resin, a sealing resin is applied and cured so as to cover the entire semiconductor chip, wire, and reinforcing resin, and the entire semiconductor chip is sealed with resin.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] In recent years, while semiconductor chips are becoming more multifunctional, semiconductor devices on which semiconductor chips are mounted are required to be miniaturized, and it is necessary to connect a semiconductor chip and a circuit board with a narrow array pitch using a large number of wires.

[0006] In the method described in Patent Document 1, the semiconductor chip, wires, and reinforcing resin are covered with a sealing resin. For ease of molding, a high-viscosity resin is used as the sealing resin. However, with a high-viscosity resin, air bubbles and voids tend to form between wires arranged at a narrow pitch and in areas hidden by the reinforcing resin. If the sealing resin solidifies with air bubbles and voids present, its mechanical strength decreases, which can lead to problems as it becomes insufficient in protecting the wires.

[0007] Therefore, it is conceivable to use a low-viscosity resin as the sealing resin to cover the entire semiconductor chip, wire, and reinforcing resin. However, because low-viscosity resins tend to wet and spread easily, it may be difficult to apply a sealing resin of sufficient thickness to protect the wire. Furthermore, if a large amount of low-viscosity resin is applied to ensure sufficient thickness, the sealing resin may overflow and spread in the area outside the reinforcing resin, potentially causing contamination and raising concerns about a decrease in the quality and reliability of the semiconductor device. Patent document 1 also describes a method in which a cavity is defined using a mold to enclose the semiconductor chip, wire, and reinforcing resin, and molten resin is poured into the cavity, but this method has the problem of making the apparatus large.

[0008] Furthermore, when mounting a semiconductor chip with a photoelectric conversion element on a circuit board, for example, using the method described in Patent Document 1 to seal the entire semiconductor chip with a sealing resin would result in the light-receiving surface of the photoelectric conversion element being covered by the resin, preventing it from functioning properly. Similarly, when mounting a semiconductor chip with a display element or light-emitting element on a circuit board, using the method described in Patent Document 1 to seal the entire semiconductor chip with resin would result in the display or light-emitting part being covered by the resin, preventing it from functioning properly. Thus, there are many semiconductor devices to which applying the method described in Patent Document 1 is simply not practical. Therefore, there was a need for a technology that could suitably protect wires using resin in semiconductor devices in which semiconductor chips and circuit boards are connected by wires. [Means for solving the problem]

[0009] A first aspect of the present invention comprises a first substrate which is a semiconductor chip, and a second substrate which has an electrical circuit and mounts the first substrate, wherein the first substrate comprises an effective element region and a first electrode disposed between the effective element region and the outer edge of the first substrate, and a first resin member is disposed on the outer edge side of the first substrate beyond the effective element region, and the second substrate comprises a second electrode disposed between the mounting position of the first substrate and the outer edge of the second substrate, and a second resin member is disposed on the outer edge side of the second substrate beyond the mounting position of the first substrate, and between the first member and the second member is a resin member which contacts the first member and the second member. A third member is provided, the third member is not provided on the side of the effective element region that is closer to the first member, the third member is not provided on the outer edge side of the second substrate that is closer to the second member, the first electrode and the second electrode are electrically connected via wiring, the connection between the wiring and the first electrode is covered by the first member or the third member, the connection between the wiring and the second electrode is covered by the second member or the third member, and the entire area of ​​the wiring from the connection with the first electrode to the connection with the second electrode is covered by a resin member including at least the third member.

[0010] Furthermore, a second aspect of the present invention comprises, in this order, a mounting step of mounting a first substrate, which is a semiconductor chip having an effective element region and a first electrode, onto a second substrate having a second electrode and an electrical circuit; a connection step of electrically connecting the first electrode and the second electrode by wiring; and a coating step of covering the wiring with a resin member, wherein the first electrode is positioned between the effective element region and the outer edge of the first substrate, and the second electrode is positioned between the mounting position of the first substrate and the outer edge of the second substrate, and the coating step comprises a step of placing and curing a first resin member on the outer edge side of the first substrate beyond the effective element region, and a step of covering the first resin member on the outer edge side of the first substrate beyond the mounting position of the first substrate. The method for manufacturing a semiconductor device includes the steps of: placing a second resin member on the outer edge side of a second substrate and curing it; and placing a third resin member having a viscosity smaller than the viscosity of the first member before curing and the viscosity of the second member before curing between the cured first member and the cured second member and curing it; covering the connection portion between the wiring and the first electrode with the first member or the third member; covering the connection portion between the wiring and the second electrode with the second member or the third member; and covering the entire area of ​​the wiring from the connection portion with the first electrode to the connection portion with the second electrode with a resin member including at least the third member. [Effects of the Invention]

[0011] According to the present invention, a technology is available that allows for the suitable protection of wires using resin in a semiconductor device in which a semiconductor chip and a circuit board are connected by wires. [Brief explanation of the drawing]

[0012] [Figure 1] A schematic plan view of the semiconductor device according to Embodiment 1, viewed from above. [Figure 2] A schematic cross-sectional view showing a cross-section of the semiconductor device according to Embodiment 1, cut along line AA shown in Figure 1. [Figure 3](a) A diagram showing the stage in which the first substrate 100 is bonded and fixed to the second substrate 200. (b) A diagram showing the stage in which the first electrode 110 and the second electrode 210 are electrically connected using wiring 300. (c) A diagram showing the stage in which the uncured second member 500 is placed. (d) A diagram showing the stage in which the uncured first member 400 is placed. (e) A diagram showing the stage in which the first member 400 and the second member 500 are cured by irradiating them with ultraviolet light 800. (f) A diagram showing the stage in which the uncured third member 600 is placed between the cured first member 400 and the second member 500. (g) A diagram showing the stage in which the third member 600 is cured by irradiating it with ultraviolet light 800. [Figure 4] A schematic cross-sectional view showing a cross-section of a semiconductor device according to the first example of Embodiment 2, obtained by cutting along line AA shown in Figure 1. [Figure 5] A schematic cross-sectional view showing a portion of the cross-section of a semiconductor device according to the second example of Embodiment 2, obtained by cutting along line AA shown in Figure 1. [Figure 6] A schematic cross-sectional view showing a portion of the cross-section of a semiconductor device according to the third example of Embodiment 2, obtained by cutting along line AA shown in Figure 1. [Figure 7] A schematic cross-sectional view showing a cross-section of a semiconductor device according to the fourth example of Embodiment 2, obtained by cutting along line AA shown in Figure 1. [Figure 8] A schematic cross-sectional view showing a cross-section of the semiconductor device according to Embodiment 3, obtained by cutting along line AA shown in Figure 1. [Figure 9] A schematic cross-sectional view showing a cross-section of a semiconductor device according to Embodiment 4. [Figure 10] A schematic plan view of the semiconductor device according to Embodiment 5, viewed from above. [Figure 11] A schematic cross-sectional view showing a cross-section of the semiconductor device according to Embodiment 5, cut along the line BB shown in Figure 10. [Figure 12] (a) A schematic diagram illustrating equipment equipped with an imaging device (semiconductor device) according to Embodiment 6. (b) A diagram showing an example of a photoelectric conversion system for an in-vehicle camera. (c) A diagram showing a photoelectric conversion system when imaging the area in front of the vehicle. [Figure 13](a) Schematic diagram showing the equipment as a radiation imaging system according to Embodiment 7. (b) Schematic diagram showing the configuration of a transmission electron microscope as a radiation imaging system according to Embodiment 7.

Embodiments for Carrying Out the Invention

[0013] Referring to the drawings, a semiconductor device, a method for manufacturing a semiconductor device, etc. according to an embodiment of the present invention will be described. The embodiments shown below are illustrative, and for example, those skilled in the art can appropriately modify and implement the detailed configurations without departing from the gist of the present invention.

[0014] In the drawings referred to in the following description of the embodiments, unless otherwise specified, elements denoted with the same reference numerals have the same functions. In the drawings, when there are a plurality of the same elements arranged, the assignment of reference numerals and their descriptions may be omitted.

[0015] Also, for the convenience of illustration and description, the drawings may be represented schematically, so the shapes, sizes, arrangements, etc. of the elements shown in the drawings may not necessarily match the actual objects exactly. Also, the description of "XX or more and YY or less" or "XX to YY" representing a numerical range means a numerical range including the endpoints XX (lower limit) and YY (upper limit) unless otherwise specified. When the numerical ranges are described stepwise, the upper and lower limits of each numerical range can be arbitrarily combined.

[0016] Also, when looking through a semiconductor device in a direction (Z direction) perpendicular to the main surface of the semiconductor chip, it may be referred to as viewing the semiconductor device in plan view.

[0017] [Embodiment 1] (Configuration of the Semiconductor Device) Figure 1 is a schematic plan view of a semiconductor device according to Embodiment 1, and Figure 2 is a schematic cross-sectional view showing a cross-section obtained by cutting the semiconductor device along line AA shown in Figure 1. The semiconductor device according to this embodiment has a first substrate 100 as a semiconductor chip and a second substrate 200 as a circuit board, and the first substrate 100 is mounted at a predetermined position (mounting position) on the second substrate. Note that if the semiconductor device is cut along a direction passing through the center of the semiconductor device shown in Figure 1 and perpendicular to line AA, a cross-sectional view similar to that in Figure 2 may be obtained.

[0018] The first substrate 100, as a semiconductor chip, is a substrate on which semiconductor elements are formed. For example, it may be a substrate on which a solid-state image sensor for capturing optical images such as visible light, infrared light, or ultraviolet light, a radiation detection element for capturing radiation images, a display element for displaying images, or a light-emitting element is formed. In the effective element region 120 of the first substrate 100, semiconductor elements such as photoelectric conversion elements and light-emitting elements are provided according to the function of the semiconductor device. In order not to interfere with the function of such semiconductor elements, the first member 400, second member 500, and third member 600, which will be described later, are not placed in the effective element region 120.

[0019] Multiple first electrodes 110, made of, for example, AL-Cu or AL-Si, are provided near the outer edge of the main surface of the first substrate 100. Wiring 300, made of, for example, gold wire, copper wire, or AL wire, is wire-bonded to the first electrodes 110.

[0020] The first electrode 110 of the first substrate 100 is electrically connected to the second electrode 210 of the second substrate 200 via wiring 300. As shown in Figure 2, the connection point where wiring 300 is bonded to the first electrode 110 is designated as the first connection point BP1, and the connection point where wiring 300 is bonded to the second electrode 210 is designated as the second connection point BP2. Wiring 300 functions as electrical signal wiring and power supply wiring.

[0021] The second substrate 200 is a circuit board made of, for example, ceramic or glass epoxy as a base material. The second substrate 200 includes, for example, electrical circuits for driving or controlling semiconductor elements on the first substrate 100, or for sending and receiving signals with the semiconductor elements. The second substrate 200 has an island portion in the center for mounting the first substrate 100, and the first substrate 100 is fixed to the island portion.

[0022] On the second substrate 200, a plurality of second electrodes 210 made of a material that can be wire-bonded with the wiring 300, such as Au, Cu, Ni, or Al, are formed at a predetermined distance from the first substrate 100. The second electrodes 210 are positioned, for example, near the outer edge of the main surface of the second substrate 200, to prevent the wire-bonded wiring 300 from being excessively bent and subjected to excessive tension.

[0023] In the first substrate 100, a resin-made first member 400 is provided between the effective element region 120 and the first connection point BP1. In the example shown in Figure 2, the first member 400 is positioned so as not to overlap with the effective element region 120 and the first electrode 110. The first member 400 may overlap with a portion of the first electrode 110, as long as it does not overlap with the effective element region 120.

[0024] On the second substrate 200, a second resin member 500 is provided on the side opposite to the first substrate 100 with respect to the second connection point BP2, that is, on the outer edge side of the second substrate 200 beyond the second connection point BP2. In the example shown in Figure 2, the second member 500 is positioned to overlap with a part of the second electrode 210, but it may also be positioned on the outer edge side of the second substrate 200 to not overlap with the second electrode 210.

[0025] The first member 400 and the second member 500 are made of resins such as acrylic resin, epoxy resin, and silicone resin. The manufacturing method for the first member 400 and the second member 500 will be described later, but they can be formed by applying uncured resin to predetermined positions using dispensers such as air pulse type, jet type, or volumetric metering type, and then curing (solidifying) it.

[0026] A third member 600 made of resin is provided between the first member 400 and the second member 500 so as to cover the wiring 300. In this embodiment, the wiring 300 does not come into contact with the first member 400 or the second member 500, and the entire area from the connection point with the first electrode to the connection point with the second electrode is covered by the third member. The third member 600 is not positioned inside the first member 400 (i.e., closer to the effective element region 120 than the first member 400), nor is it positioned outside the second member 500 (i.e., closer to the outer edge of the second substrate 200 than the second member 500). The third member 600 overlaps with the first member 400 on the side opposite to the effective element region 120 with respect to the apex (highest height) of the first member 400. Also, the third member 600 overlaps with the second member 500 on the side of the apex (highest height) of the second member 500 that is closer to the first member 400. The third member 600 is made of a resin such as acrylic resin, epoxy resin, or silicone resin. The third member 600 is formed by solidifying the first member 400 and the second member 500, then applying resin between the first member 400 and the second member 500 using a dispenser such as an air pulse type, jet type, or volumetric metering type, and allowing it to solidify. The third member 600 covers the wiring 300, but is formed by applying an appropriate amount of resin so as not to overflow beyond the first member 400 and the second member 500, and then curing it.

[0027] It is preferable that the first member 400, the second member 500, and the third member 600 are made of substantially the same type of resin material. When the semiconductor device is driven and generates heat, or when the ambient temperature of the semiconductor device changes, the temperatures of these members may change. If their coefficients of thermal expansion are different, large thermal stress will be applied to the wiring 300, which may cause the bonding to delaminate. "Substantially the same type" means that, excluding unavoidable variations in composition ratio during manufacturing and unavoidable inclusion of impurities, the composition is identical.

[0028] Even when these components are formed using the same type of material, the interface between the first component 400 and the third component 600, and the interface between the second component 500 and the third component 600, can be identified by forming and observing a cross-section as shown in Figure 2. Since the third component 600 is applied after the first component 400 and the second component 500 have solidified and been exposed to the atmosphere, and then the third component 600 is solidified, even in a laminate of the same type of resin material, interface surfaces, which are traces of the manufacturing process, can be observed.

[0029] If the same type of resin material is not used, it is desirable to select a resin material such that, after curing, the elastic modulus of the third member 600 is substantially the same as, or at least less than, the elastic modulus of the first member 400 and the second member 500. "Substantially the same elastic modulus" means that the elastic modulus is the same, excluding unavoidable manufacturing errors and measurement error ranges. If the elastic modulus of the third member 600 is lower than that of the first member 400 and the second member 500, the vicinity of the first connection point BP1 and the second connection point BP2 can be mechanically protected with a high-elastic-modulus material. Furthermore, the thermal stress on the wiring 300 when the temperature changes can be mitigated with a low-elastic-modulus material. Therefore, the reliability of the electrical connection by the wiring 300 can be improved. For the third member 600, it is preferable to use a material with an elastic modulus of 0.4 MPa to 2 MPa after solidification.

[0030] (Method of manufacturing semiconductor devices) Next, a method for manufacturing a semiconductor device according to this embodiment will be described. Figures 3(a) to 3(g) are schematic diagrams illustrating each step of the semiconductor device manufacturing method.

[0031] First, as shown in Figure 3(a), the first substrate 100 is mounted and bonded to the second substrate 200 (mounting process). The first substrate 100 is placed on the island portion (mounting position) formed in the center of the second substrate 200, and die bonding is performed using an adhesive (not shown) while applying pressure. As adhesives, for example, die bond paste, double-sided tape, DAF (Dai Attach Film), UV delayed-curing adhesive, and thermosetting adhesive can be used. When using a thermosetting adhesive, the first substrate 100 is bonded and fixed by using a combination of pressure and heat.

[0032] Next, as shown in Figure 3(b), the first electrode 110 formed on the first substrate 100 and the second electrode 210 formed on the second substrate 200 are electrically connected using wiring 300 made of, for example, gold wire or copper wire (connection process). The electrical connection can be made by wire bonding, which uses ultrasound and heat to join the wire and the electrode.

[0033] After the connection process, a covering process is performed in which the wiring 300 is covered with a resin component. First, as shown in Figure 3(c), an uncured second component 500 is placed on the side of the second connection point BP2 that is opposite to the first substrate 100, that is, on the outer edge side of the second substrate 200 relative to the second connection point BP2. For the second component 500, an ultraviolet-curable resin such as acrylic resin, epoxy resin, or silicone resin is used and applied along the entire circumference of the outer edge of the second substrate 200 using a coating device such as a dispenser. A thermosetting resin may be applied instead of an ultraviolet-curable resin.

[0034] In this embodiment, the second member 500 functions as a dike (or dam) to contain the low-viscosity third member 600, which is applied in a later process, and prevent it from overflowing, so that the third member 600 can cover the wiring 300. For this reason, the second member 500 is formed to an appropriate height (thickness) so that it can contain a sufficient amount of the third member 600, depending on the bending shape and the height of the apex of the wire-bonded wiring 300.

[0035] The coating conditions, such as the viscosity of the second component 500, the needle diameter of the dispenser, the discharge pressure, and the coating speed, are set so that the uncured second component 500 does not wet and spread around the second substrate 200, and so that the second component 500 can be formed to a predetermined height (thickness). The viscosity of the uncured second component is not limited as long as the second component 500 can be applied to the predetermined position and in a predetermined shape, but for example, a range of 6 Pa·s to 10 Pa·s is preferred.

[0036] Next, as shown in Figure 3(d), an uncured first member 400 is placed between the effective element region 120 and the first connection point BP1. For the first member 400, an ultraviolet-curing adhesive made of, for example, acrylic resin, epoxy resin, or silicone resin is used and applied using a dispensing device such as a dispenser along the entire circumference of the effective element region 120, spaced apart from the effective element region 120. A thermosetting resin may be applied instead of an ultraviolet-curing resin.

[0037] In this embodiment, the first member 400 functions as a barrier (or dam) to prevent the low-viscosity third member 600, which is applied to cover the wiring 300 in a later process, from entering the effective element region 120. Therefore, the first member 400 is formed to an appropriate height (thickness) so as to be able to store a sufficient amount of the third member 600, depending on the bending shape and apex height of the wire-bonded wiring 300.

[0038] The coating conditions, such as the viscosity of the first member 400, the needle diameter of the dispenser, the discharge pressure, and the coating speed, are set so that the uncured first member 400 does not wet and spread into the effective element region 120, and so that the first member 400 of a predetermined height (thickness) can be formed. The viscosity of the uncured first member is not limited as long as the first member 400 can be applied to the predetermined position and in a predetermined shape, but for example, a range of 6 Pa·s to 10 Pa·s is preferred.

[0039] The height (thickness) of the first component 400 varies depending on the bending shape and the height of the vertices of the wire-bonded wiring 300, but for example, it is set to be in the range of 0.3 mm to 2.0 mm from the surface of the first substrate 100.

[0040] In this example, the uncured second member 500 was formed first, followed by the uncured first member 400, but the order may be reversed. If the first member 400 or the second member 500 cannot be formed to the desired height (thickness) with a single application, the member may be formed to the desired height (thickness) by applying multiple coats in layers. In some cases, the resin may be cured each time an application is made to suppress wetting and spreading while forming a resin member to the desired height (thickness). Furthermore, if the first member 400 and the second member 500 are formed using the same type of resin, there is no need to change the resin material between the steps in Figure 3(c) and Figure 3(d), thus making the production process more efficient.

[0041] Next, the process of curing the uncured first member 400 and second member 500 will be described. Figure 3(e) schematically illustrates the process of curing the first member 400 and second member 500, which are formed from ultraviolet-curable resin, by simultaneously irradiating them with ultraviolet light 800. The first member 400 and second member 500 are cured by simultaneously irradiating them with ultraviolet light 800 of a wavelength that has the effect of curing resin from an ultraviolet light source such as a high-pressure mercury lamp or an LED.

[0042] Furthermore, the hardening treatment of the first member 400 and the second member 500 may be carried out individually rather than simultaneously. For example, the second member 500 may be hardened immediately after the process shown in Figure 3(c), and the first member 400 may be hardened immediately after the process shown in Figure 3(d). Performing the hardening treatment immediately after application allows hardening to occur before deformation due to gravity, etc., thus enabling the first member 400 and the second member 500 to be solidified with high shape accuracy.

[0043] Furthermore, when forming the first member 400 and the second member 500 using UV-curable acrylic resin, it is preferable to cure them by irradiating them with ultraviolet light in a nitrogen atmosphere to prevent curing defects caused by oxygen. Also, when forming the first member 400 and the second member 500 using thermosetting resin instead of UV-curable resin, it is preferable to use a fast-curing material to shorten the curing time by heating.

[0044] Next, as shown in Figure 3(f), an uncured third member 600 is placed between the cured first member 400 and the second member 500. For the third member 600, a UV-curable resin such as acrylic resin, epoxy resin, or silicone resin is used and applied along the entire circumference of the outer edge of the first member 400 using a dispensing device such as a dispenser. A thermosetting resin may be applied instead of the UV-curable resin.

[0045] After curing, the first member 400 and the second member 500 function as a dam to hold the uncured third member 600, and a sufficient amount of the uncured third member 600 is applied between the first member 400 and the second member 500 to cover the wiring 300. If a single application does not provide enough to cover the wiring 300, multiple applications may be made in layers.

[0046] In this embodiment, the third member 600 is formed using a resin with a lower viscosity at the time of application (before curing) than the resin used to form the first member 400 and the second member 500. The first member 400 and the second member 500 were formed with a resin that has high viscosity and does not flow easily, as they needed to be formed to a sufficient height (thickness) to function as a dam to hold the uncured third member 600. In contrast, the third member 600 needs to reliably cover the wiring 300 in order to achieve the function of protecting the wiring 300, and to fill the gaps between the densely arranged wiring 300 so that no air bubbles or voids are trapped inside. To reliably fill the gaps between the densely arranged wiring 300 and suppress the generation of air bubbles and voids, it is advantageous to use a resin with low viscosity. Generally, when trying to secure height (coating thickness) by applying a resin with low viscosity and high fluidity, it tends to spread to the surrounding area. However, in this embodiment, the first member 400 and the second member 500 after curing function as a dam that stores the resin of the third member before curing. Therefore, even if the wiring 300 is covered with a resin that has low viscosity and high fluidity, the resin of the third member before curing will not overflow the dam and spill out into the surrounding area.

[0047] The viscosity of the resin used for the third member 600 before curing is not limited as long as it can cover the wiring 300 and fill the gaps in the wiring 300 without generating air bubbles or voids, but for example, a range of 4 Pa·s to 6 Pa·s is preferred.

[0048] In this embodiment, when comparing the viscosity of the third member 600 at the time of application (before curing), a resin material with a relatively lower viscosity than the first member 400 and the second member 500 is used, but it is preferable that these are resin materials of the same type (same composition). This is because if the first member 400, the second member 500, and the third member 600 are formed from the same type of resin material, the coefficient of thermal expansion after curing can be made the same, and it is possible to prevent large thermal stress from being applied to the wiring 300 even when the temperature changes when using the semiconductor device.

[0049] Generally, the viscosity of resin material before curing changes with temperature. Therefore, when forming each component, the same type of resin material can be applied at different temperatures to create different viscosities. For example, if the viscosity of a resin material decreases at higher temperatures, when applying the third component 600, the resin material should be applied at a higher temperature than when applying the first component 400 and the second component 500.

[0050] However, the implementation of the present invention is not limited to using the same type (same composition) of resin material for the first member 400, the second member 500, and the third member 600. Resin materials of different compositions may be used, as long as their viscosities before solidification are different.

[0051] Next, the process of curing the uncured third component 600 will be described. Figure 3(g) schematically illustrates the process of curing the third component 600, which is made of an ultraviolet-curable resin, by irradiating it with ultraviolet light 800. The third component 600 is cured by irradiating it with ultraviolet light 800 of a wavelength that has the effect of curing resin from an ultraviolet light source such as a high-pressure mercury lamp or an LED.

[0052] Furthermore, when forming the third member 600 using an ultraviolet-curable acrylic resin, it is preferable to cure it by irradiating it with ultraviolet light in a nitrogen atmosphere to prevent curing defects caused by oxygen. Also, when forming the third member 600 using a thermosetting resin instead of an ultraviolet-curable resin, it is preferable to use a fast-curing resin material to shorten the curing time. By performing the above processing steps, the semiconductor device according to the embodiment is manufactured.

[0053] As described above, in this embodiment, the semiconductor device is constructed by filling the space between a first member 400 and a second member 500, which are pre-formed using a resin with relatively high viscosity, with a third member 600 having relatively low viscosity. This makes it possible to suppress the generation of air bubbles and voids when forming the protective covering structure for the wiring 300 using resin. By pre-forming the first member 400 and the second member 500, it is prevented that the third member will wet and spread, contaminating the effective element region 120 formed on the first substrate 100 and the outer edge of the second substrate 200. According to this embodiment, a highly reliable and high-quality semiconductor device can be provided.

[0054] [Embodiment 2] In Embodiment 1, the first member 400 was positioned spaced apart from the first connection point BP1, the second member 500 was positioned spaced apart from the second connection point BP2, and the wiring 300 was covered only by the third member 600; however, embodiments of the present invention are not limited to this.

[0055] Embodiment 2 will be described below, but the explanation of matters common to Embodiment 1 will be simplified or omitted. In Embodiment 2, for example, the first connection point BP1 may be covered by the first member 400. Alternatively, the second connection point BP2 may be covered by the second member 500. The wiring 300 may be covered by the first member and the third member, or by the second member and the third member, or by the first member, the second member and the third member. In other words, the entire area of ​​the wiring 300 from the connection point with the first electrode 110 to the connection point with the second electrode 210 is covered by a resin member including at least the third member 600.

[0056] A schematic plan view of the semiconductor device according to Embodiment 2 is shown in Figure 1, similar to Embodiment 1, and therefore no explanation is provided. The semiconductor device according to Embodiment 2 also includes, similar to Embodiment 1, a first substrate 100 as a semiconductor chip, a second substrate 200 as a circuit board, wiring 300, a first member 400, a second member 500, and a third member 600.

[0057] (Example 1) Figure 4 is a schematic cross-sectional view showing a cross-section of a semiconductor device according to the first example of Embodiment 2, obtained by cutting along line AA shown in Figure 1. Note that a similar cross-sectional view may also be obtained when the semiconductor device is cut along a direction perpendicular to line AA, passing through the center of the semiconductor device.

[0058] In the example shown in Figure 4, similar to Embodiment 1, the first member 400 is positioned so as to be spaced apart from the effective element region 120, but it differs in that the first member 400 is formed to cover the entire first electrode 110 including the first connection point BP1 and a part of the wiring 300. Furthermore, if the first member 400 protrudes beyond the outer edge of the first substrate 100, that is, beyond the side surface of the first substrate, gaps and bubbles may be generated when forming the third member 600, so it is desirable to position the first member 400 inside the outer edge of the first substrate 100.

[0059] Furthermore, similar to Embodiment 1, the second member 500 is positioned so as to be spaced apart from the first substrate 100, but the difference is that the second member 500 is formed to cover the entire second electrode 210, including the second connection point BP2, and a part of the wiring 300.

[0060] It is preferable that the first member 400, the second member 500, and the third member 600 are made of the same type of resin material. When the semiconductor device is driven and generates heat, or when the ambient temperature of the semiconductor device changes, the temperatures of these members may change. If their coefficients of thermal expansion are different, large thermal stresses may be applied to the wiring 300, potentially causing the bonding to delaminate.

[0061] Furthermore, even when these components are formed using the same type of material, the interface between the first component 400 and the third component 600, and the interface between the second component 500 and the third component 600, can be identified by forming and observing a cross-section as shown in Figure 4. Since the third component 600 is applied after the first component 400 and the second component 500 have solidified and been exposed to the atmosphere, and then the third component 600 has solidified, the interface can be observed as a trace of the manufacturing process, even in a laminate of the same type of resin material.

[0062] If the same type of resin material is not used, it is desirable to select a resin material such that the elastic modulus of the third member 600 is equal to or lower than that of the first member 400 and the second member 500. When the elastic modulus of the third member 600 is relatively low, the vicinity of the first connection point BP1 and the second connection point BP2 can be mechanically protected with a material with a high elastic modulus. Furthermore, the thermal stress on the wiring 300 when the temperature changes can be mitigated with a material with a low elastic modulus. This improves the reliability of the electrical connection by the wiring 300. For the third member 600, it is preferable to use a material with an elastic modulus of 0.4 MPa to 2 MPa after solidification.

[0063] To manufacture the semiconductor device according to Embodiment 2, the procedure shown in Figures 3(a) to 3(g) is used, similar to that for Embodiment 1. When comparing the viscosity of the third component 600 with that of the first component 400 and the second component 500, a resin material with relatively lower viscosity is used for the third component 600. However, in Embodiment 2, at the stage shown in Figure 3(c), the second connection point BP2 and the wiring 300 in its vicinity are covered by the second component 500, and at the stage shown in Figure 3(d), the first connection point BP1 and the wiring 300 in its vicinity are covered by the first component 400. When one or both of the first component 400 and the second component 500 solidify, the wiring 300 is mechanically supported near the connection point by the solidified resin, and the orientation of the wiring 300 is stabilized. Therefore, in subsequent manufacturing processes, problems such as the wiring 300 falling over, deforming and causing short circuits between adjacent wirings, or peeling off from electrodes become less likely, and the manufacturing yield can be improved.

[0064] (Second example) Figure 5 is a schematic cross-sectional view showing a portion of the cross-section of a semiconductor device according to the second example of Embodiment 2, cut along line AA shown in Figure 1. Details common to the first example will not be explained. In the second example, a recess is provided in the second substrate 200 and the second electrode 210 is placed within the recess so that the second member 500 reliably covers the entire second electrode 210, including the second connection point BP2, and a portion of the wiring 300, while preventing unnecessary wetting and spreading.

[0065] The second substrate 200 has a recess around the first substrate 100 when viewed from above, and a second electrode 210 is provided at the bottom of the recess. The second electrode 210 is positioned lower than the mounting surface on which the first substrate 100 is mounted.

[0066] By positioning the second electrode 210 at the bottom of the recess, when applying the second member 500 in the process shown in Figure 3(c), the resin can be applied without excess or deficiency so as to cover the entire second electrode 210, including the second connection point BP2, and a portion of the wiring 300.

[0067] Furthermore, in order to improve the accuracy of the position and orientation when mounting the first substrate 100 on the second substrate 200, it is necessary to ensure that the flatness and parallelism of the island portion to which the first substrate 100 is fixed are sufficiently high. When polishing the island portion to improve its surface accuracy, if the second electrode 210 is formed on the same surface, polishing may be hindered, potentially resulting in insufficient surface accuracy of the island portion or the second electrode 210 being worn down and becoming too thin. Therefore, by positioning the second electrode 210 at a lower position than the island portion, it becomes easier to improve the surface accuracy of the island portion and ensure sufficient thickness of the second electrode 210.

[0068] (Third example) Figure 6 is a schematic cross-sectional view showing a portion of the cross-section of a semiconductor device according to the third example of Embodiment 2, cut along line AA shown in Figure 1. Details common to the first example are omitted from explanation. In the third example, the first member 400 is formed by applying multiple layers of resin to ensure that it reliably covers the entire first electrode 110, including the first connection point BP1, and a portion of the wiring 300. Figure 6 shows an example where the first member 400 is formed by applying two layers of resin, but the number of layers is arbitrary.

[0069] The first member 400 is positioned so as to be higher than the highest point of the wiring 300 in the Z direction. Therefore, when foreign matter approaches the wiring 300 from the Z direction, the first member 400 can protect the wiring 300. When increasing the height of the first member 400 by applying multiple coats of resin, it is preferable to cure the resin after each application to improve the accuracy of the shape.

[0070] (Fourth example) Figure 7 is a schematic cross-sectional view showing a cross-section of a semiconductor device according to the fourth example of Embodiment 2, obtained by cutting along line AA shown in Figure 1. Note that if the semiconductor device is cut along a direction passing through the center of the semiconductor device and perpendicular to line AA, a cross-sectional view similar to that in Figure 7 may be obtained. Matters common to the first example will not be explained. In the fourth example, the second member 500 is formed to cover the entire second electrode 210 including the second connection point BP2 and a part of the wiring 300, but differs in that the second member 500 extends onto the second substrate 200 so as to abut against the side surface of the first substrate 100.

[0071] The first substrate 100 is mounted on the second substrate 200, but slight gaps or steps may occur at the interface between the two. As in the first example, if the second component 500 is separated from the first substrate 100, air bubbles may form in these gaps or steps when the third component 600 is applied. Therefore, in the fourth example, the second component 500 is applied so as to be in contact with the side surface of the first substrate 100 to cover or fill these gaps or steps, and the third component 600 is formed on top of it.

[0072] In the fourth example, when comparing the viscosities of the two components at the time of application (before curing), the second component 500 may be made of a resin material with a relatively lower viscosity than the first component 400. As in the other examples, the third component 600 is made of a resin material with a relatively lower viscosity than both the first component 400 and the second component 500.

[0073] [Embodiment 3] Embodiments 1 and 2 show examples in which the first electrode 110 and the second electrode 210 are arranged with a relatively large height difference in the direction perpendicular to the main surface of the first substrate (Z direction). Embodiment 3 shows a semiconductor device in which the height difference between the first electrode 110 and the second electrode 210 is suppressed. Reducing the height difference between the first electrode 110 and the second electrode 210 makes it possible to reduce the curvature of the wiring 300 and also reduce the maximum height of the wiring 300, thus making it easier to form the third member 600 to cover it. Matters common to Embodiment 1 or Embodiment 2 will not be explained.

[0074] A schematic plan view of the semiconductor device according to Embodiment 3 is shown in Figure 1, similar to Embodiment 1, and therefore no explanation is provided. The semiconductor device according to Embodiment 3 also includes, similar to Embodiment 1, a first substrate 100 as a semiconductor chip, a second substrate 200 as a circuit board, wiring 300, a first member 400, a second member 500, and a third member 600.

[0075] Figure 8 is a schematic cross-sectional view showing a cross-section of the semiconductor device according to Embodiment 3, cut along line AA shown in Figure 1. Note that a similar cross-sectional view may also be obtained when the semiconductor device is cut along a direction perpendicular to line AA, passing through the center of the semiconductor device.

[0076] In this embodiment, a recess is provided in the second substrate 200 so that the height difference between the first electrode 110 and the second electrode 210 is reduced when the first substrate 100 is mounted on the second substrate 200, and the island portion on which the first substrate 100 is mounted is placed at the bottom of the recess. That is, the island portion (mounting surface of the first substrate) is positioned lower than the second electrode 210.

[0077] With this configuration, the height difference between the first electrode 110 and the second electrode 210 is suppressed, allowing the wiring 300 connecting these electrodes to be installed along a curve with a low peak height and small curvature. As the height of the wiring 300 in the Z direction is reduced, the risk of the wiring 300 coming into contact with foreign matter is reduced. Furthermore, as the angle between the wiring and the electrode surface at the joint with the electrode is reduced, the stress on the joint can be reduced, thereby improving the reliability of the electrical connection.

[0078] Furthermore, if the maximum height of the wiring 300 is small, it becomes easier to form the third member 600 with a low-viscosity resin to cover the wiring 300. The height of the second member 500 or the first member 400, which functions as a dike (or dam) to store the third member 600 and prevent it from flowing out, can be reduced. In addition, the amount of third member 600 required to cover the wiring 300 and the time required for the coating process can be reduced, thereby lowering the manufacturing cost of semiconductor devices.

[0079] [Embodiment 4] In Embodiments 1 to 3, the first substrate 100 as a semiconductor chip was integrated with the second substrate 200, which is a single circuit board, and they were electrically connected to each other via wire wiring. However, the embodiments of the present invention are not limited to this.

[0080] The semiconductor chips may be electrically connected to each other via wire connections with multiple substrates (circuit boards or semiconductor chips). Alternatively, the semiconductor chips may be integrated with multiple substrates (circuit boards or semiconductor chips).

[0081] Figure 9 is a schematic cross-sectional view showing a cross-section of a semiconductor device according to Embodiment 4. Details common to any of Embodiments 1 to 3 will not be explained. In the example shown in Figure 9, the semiconductor device comprises a first substrate 100 as a semiconductor chip, a second substrate 200 as a circuit board, a third substrate 700 as a circuit board, a base substrate 900, and wiring 300. In this example, the first substrate 100, the second substrate 200, and the third substrate 700 are all bonded to the base substrate and are integrated. Here, if the entire integrated portion of the second substrate 200, the base substrate 900, and the third substrate 700 is considered as the second substrate, then the first substrate can be said to be mounted on the second substrate. Note that Figure 9 is just one example, and the number, arrangement, and fixing method of the substrates in Embodiment 4 are not limited to this example.

[0082] A first electrode 110A formed on the first substrate 100 is electrically connected to a second electrode 210 formed on the second substrate 200 by wiring 300. The connection point BP1A between the first electrode 110A and the wiring 300 is covered by a first member 400, and the connection point BP2A between the second electrode 210 and the wiring 300 is covered by a second member 500A.

[0083] A first electrode 110B formed on the first substrate 100 is electrically connected to a second electrode 710 formed on the third substrate 700 by wiring 300. The connection point BP1B between the first electrode 110B and the wiring 300 is covered by a first member 400, and the connection point BP2B between the second electrode 710 and the wiring 300 is covered by a second member 500B.

[0084] All wiring 300 is covered by a resin component including a third component 600. The third component 600 is formed using a resin with a lower viscosity at the time of application (before curing) than the resin used to form the first component 400, the second component 500A, and the second component 500B. When applying the third component 600, which has lower viscosity, the first component 400, the second component 500A, and the second component 500B function as a dam to hold back the uncured third component 600.

[0085] In this embodiment, the semiconductor device is formed by pre-forming the first member 400, the second member 500A, and the second member 500B by applying a high-viscosity resin, and then filling the space between them with a low-viscosity third member 600. This suppresses the generation of air bubbles and voids when forming the protective covering structure for the wiring 300 using resin. Furthermore, it prevents the third member from wetting and spreading, thus preventing contamination of the effective element region 120 formed on the first substrate 100, the outer edge of the second substrate 200, and the outer edge of the third substrate 700. According to this embodiment, a highly reliable and high-quality semiconductor device can be provided.

[0086] [Embodiment 5] Embodiments 1 to 4 show examples in which electrodes are arranged in a straight line on a circuit board connected to a semiconductor chip by wire wiring, but the embodiments of the present invention are not limited to these. Embodiment 5 shows an example in which electrodes connected to a semiconductor chip by wire wiring are arranged in a staggered pattern on a circuit board. Matters common to any of Embodiments 1 to 4 will be simplified or omitted from the explanation.

[0087] Figure 10 is a schematic plan view of a semiconductor device according to Embodiment 5, and Figure 11 is a schematic cross-sectional view showing a cross-section obtained by cutting the semiconductor device along the BB line shown in Figure 10. The semiconductor device according to this embodiment has a first substrate 100 as a semiconductor chip and a second substrate 200 as a circuit board. Note that if the semiconductor device is cut along a direction passing through the center of the semiconductor device shown in Figure 10 and perpendicular to the BB line, the cross-sectional view may be similar to that of Figure 11.

[0088] As the number of first electrodes 110 for wire bonding arranged on the first substrate 100, which is a semiconductor chip, increases and the arrangement pitch decreases, it becomes necessary to reduce the arrangement pitch of the second electrodes for wire bonding arranged on the second substrate 200, which is a circuit board, accordingly. However, on the circuit board side, there are constraints such as electrode size and wiring pattern layout, which can make it difficult to arrange a large number of second electrodes at high density in an in-line configuration.

[0089] In this embodiment, even if a large number of first electrodes 110 are formed on the semiconductor chip with a small array pitch, the second electrodes of the circuit board are arranged in a staggered pattern, so the wiring 300 can be wire-bonded without any problems.

[0090] In the examples shown in Figures 10 and 11, the second electrodes 210A in the inner row and the second electrodes 210B in the outer row are arranged alternately along each side of the second substrate 200. Note that the second electrodes are not limited to two rows (inner and outer rows), but may be arranged in three or more rows.

[0091] The first connection point BP1 between the first electrode 110 of the first substrate 100 and the wiring 300 is covered by the first member 400, similar to Embodiment 2. Furthermore, the second connection points BP2A between the second electrode 210A of the second substrate 200 and the wiring 300, and the second connection points BP2B between the second electrode 210B and the wiring 300, are covered by the second member 500. The wiring 300 is covered by a resin member including at least a third member 600.

[0092] Similar to other embodiments, in Embodiment 5, when comparing the viscosity of the third member 600 at the time of application (before curing), a resin material with relatively lower viscosity than the first member 400 and the second member 500 is used for the third member 600. The first member 400 and the second member 500 are pre-formed by applying a high-viscosity resin, and the low-viscosity third member 600 is filled between the first member 400 and the second member 500. This makes it possible to suppress the generation of air bubbles and voids when forming the covering structure that protects the wiring 300 with resin. By pre-forming the first member 400 and the second member 500, it is prevented that the third member will wet and spread, contaminating the effective element region 120 formed on the first substrate 100 and the outer edge of the second substrate 200. According to this embodiment, even when the number of first electrodes 110 for wire bonding arranged on the first substrate 100 as a semiconductor chip is large and the arrangement pitch is small, a highly reliable and high-quality semiconductor device can be provided.

[0093] [Embodiment 6] As Embodiment 6, a device equipped with a semiconductor device according to one of the above-described embodiments will be described. Figure 12(a) is a schematic diagram illustrating a device 9191 equipped with an imaging device 930 including the semiconductor device 910 according to the above-described embodiment. The device 9191 equipped with the imaging device 930 will be described in detail.

[0094] The imaging device 930 includes a semiconductor device 910 which integrates a first substrate 100 as a photoelectric converter and a second substrate 200 as a circuit board equipped with at least one of a memory circuit or a logic circuit. The semiconductor device 910 is a semiconductor device according to any of the embodiments described above.

[0095] The device 9191 may include at least one of the following: an optical device 940, a control device 950, a processing device 960, a display device 970, a storage device 980, and a mechanical device 990. The optical device 940 is provided in conjunction with the imaging device 930 and is, for example, a lens, shutter, and mirror. The control device 950 controls the imaging device 930. The control device 950 is, for example, a semiconductor device such as an ASIC.

[0096] The processing unit 960 processes the signals output from the imaging device 930. The processing unit 960 is a semiconductor device such as a CPU or ASIC that constitutes the DFE (Digital Front End). The display device 970 is an EL display device or liquid crystal display device that displays the information (image) obtained by the imaging device 930. The storage device 980 is a magnetic device or semiconductor device that stores the information (image) obtained by the imaging device 930. The storage device 980 is a volatile memory such as SRAM or DRAM, or a non-volatile memory such as flash memory or a hard disk drive.

[0097] The mechanical device 990 has movable parts or propulsion parts such as motors or engines. The device 9191 displays signals output from the imaging device 930 on the display device 970 or transmits them to the outside using a communication device (not shown) provided in the device 9191. For this purpose, it is preferable that the device 9191 further includes a storage device 980 and a processing device 960, separate from the memory circuits and arithmetic circuits of the imaging device 930. The mechanical device 990 may be controlled based on signals output from the imaging device 930.

[0098] Furthermore, the device 9191 is suitable for electronic devices such as information terminals with shooting capabilities (e.g., smartphones and wearable devices) and cameras (e.g., interchangeable lens cameras, compact cameras, video cameras, and surveillance cameras). In a camera, the mechanical device 990 can drive components of the optical device 940 for zooming, focusing, and shutter operation. Alternatively, the mechanical device 990 in a camera can move the imaging device 930 for vibration damping.

[0099] Furthermore, the device 9191 may be a transport device such as a vehicle, ship, or aircraft. The mechanical device 990 in the transport device may be used as a mobile device. The device 9191 as a transport device is suitable for transporting the imaging device 930 or for assisting and / or automating driving (piloting) through its imaging function. The processing device 960 for assisting and / or automating driving (piloting) can perform processing to operate the mechanical device 990 as a mobile device based on the information obtained from the imaging device 930. Alternatively, the device 9191 may be a medical device such as an endoscope, a measuring instrument such as a distance sensor, an analytical instrument such as an electron microscope, an office machine such as a copier, or an industrial machine such as a robot. According to the above embodiment, heat is efficiently dissipated from the image sensor chip, making it possible to stably acquire images with good characteristics.

[0100] Therefore, by using the imaging device 930 according to this embodiment in the equipment 9191, the value of the equipment can also be improved. For example, when the imaging device 930 is mounted on a transport device, excellent performance can be obtained when taking images of the outside of the transport device or measuring the external environment. Thus, when manufacturing and selling transport devices, deciding to mount the semiconductor device according to this embodiment on the transport device is advantageous in improving the performance of the transport device itself. In particular, the imaging device 930 is suitable for transport devices that use information obtained from the semiconductor device to assist in operation and / or perform autonomous operation. Furthermore, its implementation in vehicles, ships, aircraft, etc., is not limited to equipment used for transport purposes, but can also be suitably implemented in drones that perform aerial photography for various purposes, such as inspecting buildings and agricultural facilities, and monitoring natural phenomena.

[0101] The photoelectric conversion system and mobile body of this embodiment will be described with reference to Figures 12(b) and 12(c). Figure 12(b) shows an example of a photoelectric conversion system related to an in-vehicle camera. The photoelectric conversion system 8 has a photoelectric conversion device 80. The photoelectric conversion device 80 is a photoelectric conversion device as an electronic component, including the semiconductor device described in the above embodiment.

[0102] The photoelectric conversion system 8 includes an image processing unit 801 that performs image processing on multiple image data acquired by the photoelectric conversion device 80, and a parallax acquisition unit 802 that calculates parallax (phase difference of parallax images) from the multiple image data acquired by the photoelectric conversion system 8. The photoelectric conversion system 8 also includes a distance acquisition unit 803 that calculates the distance to an object based on the calculated parallax, and a collision determination unit 804 that determines whether or not there is a possibility of collision based on the calculated distance. Here, the parallax acquisition unit 802 and the distance acquisition unit 803 are examples of distance information acquisition means that acquire distance information to an object. That is, distance information is information related to parallax, defocus amount, distance to an object, etc. The collision determination unit 804 may use any of this distance information to determine the possibility of collision. The distance information acquisition means may be implemented by specially designed hardware, or by a software module. It may also be implemented by FPGA (Field Programmable Gate Array) or ASIC (Application Specific Integrated Circuit), etc.

[0103] The photoelectric conversion system 8 is connected to the vehicle information acquisition device 810 and can acquire vehicle information such as vehicle speed, yaw rate, and steering angle. The photoelectric conversion system 8 is also connected to the control ECU 820, which is a control device that outputs a control signal to generate braking force on the vehicle based on the judgment result of the collision judgment unit 804. The photoelectric conversion system 8 is also connected to the warning device 830, which issues a warning to the driver based on the judgment result of the collision judgment unit 804. For example, if the collision judgment result of the collision judgment unit 804 indicates a high probability of collision, the control ECU 820 performs vehicle control to avoid a collision or mitigate damage by applying the brakes, releasing the accelerator, or suppressing engine output. The warning device 830 warns the user by sounding an alarm, displaying warning information on a screen such as a car navigation system, or vibrating the seat belt or steering wheel.

[0104] In this embodiment, the photoelectric conversion system 8 images the area around the vehicle, for example, in front of or behind it. Figure 12(c) shows the photoelectric conversion system when imaging the area in front of the vehicle (imaging range 850). The vehicle information acquisition device 810 sends instructions to the photoelectric conversion system 8 or the photoelectric conversion device 80. This configuration can further improve the accuracy of distance measurement.

[0105] The above example illustrates control to prevent collisions with other vehicles, but it can also be applied to control systems that automatically follow other vehicles or automatically drive to prevent vehicles from straying from their lanes. Furthermore, the photoelectric conversion system can be applied not only to vehicles such as the vehicle itself, but also to mobile objects (mobile devices) such as ships, aircraft, or industrial robots. In addition, it can be applied not only to mobile objects but also to a wide range of devices that utilize object recognition, such as intelligent transportation systems (ITS).

[0106] The semiconductor device according to the embodiment described above makes it possible to provide a highly reliable and high-quality semiconductor device. Therefore, for example, it can improve the responsiveness of control for the autonomous driving of mobile vehicles, and contribute to improved safety.

[0107] The apparatus according to this embodiment may include at least one of the following: an optical apparatus corresponding to an imaging apparatus having a semiconductor device according to any of the above embodiments; a control device for controlling the imaging apparatus; and a processing device for processing information obtained from the imaging apparatus. Alternatively, it may include at least one of the following: a display device for displaying information obtained from the imaging apparatus; a storage device for storing information obtained from the imaging apparatus; and a mechanical device that operates based on the information obtained from the imaging apparatus.

[0108] [Embodiment 7] As Embodiment 7, another example of a radiation imaging system incorporating the semiconductor device described in Embodiments 1 to 5 as a radiation detector will be described with reference to Figures 13(a) and 13(b).

[0109] Figure 13(a) shows the instrument EQP as a radiation imaging system equipped with a radiation detector 1000. The radiation detector 1000 includes an image sensor 101, which is a semiconductor device, as well as a package PKG for mounting the image sensor 101.

[0110] The package PKG may include a base on which the image sensor 101 is fixed, a cover made of glass or the like facing the image sensor 101, and connecting members such as bonding wires or bumps that connect terminals provided on the base and terminals provided on the image sensor 101. The image sensor 101 has a pixel array 102 in which pixels 103 are arranged in a matrix and a peripheral region around it. Peripheral circuits (for example, a vertical scanning circuit 104 or a DFE 109) can be provided in the peripheral region.

[0111] The EQP device may further comprise at least one of the following: an optical system OPT, a control unit CTRL, a processing unit PRCS, a display device DSPL, a memory device MMRY, and a mechanical device MCHN. The optical system OPT images the radiation onto the radiation detector 1000 and is, for example, a lens, shutter, or mirror. Depending on the type of radiation being handled, the optical system OPT may also image particle beams such as electron beams or proton beams onto the radiation detector 1000. The control unit CTRL controls the radiation detector 1000 and is, for example, an ASIC. The processing unit PRCS processes the signals output from the radiation detector 1000 and is a device such as a CPU or ASIC for configuring an AFE (analog front end) or DFE (digital front end). The display device DSPL is an EL display device or liquid crystal display device that displays the information obtained by the radiation detector 1000 in the form of a visible image or the like. The memory device MMRY is a magnetic device or semiconductor device that stores the information obtained by the radiation detector 1000. The memory device MMRY is a volatile memory such as SRAM or DRAM, or a non-volatile memory such as flash memory or a hard disk drive. The mechanical device MCHN has moving parts such as motors and engines, or propulsion parts.

[0112] The EQP device displays the signal output from the radiation detector 1000 on the DSPL display device, or transmits it externally via a communication device (not shown) provided by the EQP device. For this purpose, it is preferable that the EQP device further includes a memory device MMRY and a processing device PRCS, separate from the memory circuit and arithmetic circuit of the radiation detector 1000. The mechanical device MCHN may be controlled based on the signal output from the radiation detector 1000.

[0113] The EQP device shown in Figure 13(a) may be a medical device such as an endoscope or radiological diagnostic equipment, a measuring instrument such as a distance sensor, or an analytical instrument such as an electron microscope.

[0114] Figure 13(b) is a schematic diagram showing the configuration of a transmission electron microscope (TEM) as an example of an EQP instrument. The EQP instrument as an electron microscope includes an electron source 1202 (electron gun), an irradiation lens 1204, a vacuum chamber 1201 (microscope tube), an objective lens 1206, a magnification lens system 1207, and a camera 1209 as a radiation detector 1000.

[0115] The electron beam 1203, an energy beam emitted from the electron source 1202 (radiation source), is focused by the irradiation lens 1204 and irradiated onto the sample S, which is the object of analysis (image target) and is held in the sample holder. The space through which the electron beam 1203 passes is formed by the vacuum chamber 1201 (lens tube), and this space is maintained in a vacuum. The radiation detector 1000 is positioned to face the vacuum space through which the electron beam 1203 passes. The electron beam 1203 that has passed through the sample S is magnified by the objective lens 1206 and the magnifying lens system 1207 and projected onto the radiation detector 1000. The electron optical system for irradiating the sample S with the electron beam is called the irradiation optical system, and the electron optical system for imaging the electron beam that has passed through the sample S onto the radiation detector 1000 is called the imaging optical system.

[0116] The electron source 1202 is controlled by the electron source control device 1211. The irradiation lens 1204 is controlled by the irradiation lens control device 1212. The objective lens 1206 is controlled by the objective lens control device 1213. The magnification lens system 1207 is controlled by the magnification lens system control device 1214. The sample holder control mechanism 1205 is controlled by the holder control device 1215, which controls the drive mechanism of the sample holder.

[0117] The electron beam 1203 that passes through the sample S is detected by the direct detector 1200 of the camera 1209. The output signal from the direct detector 1200 is processed by the signal processing device 1216 and the image processing device 1218, which function as the processing device PRCS, to generate an image signal. The generated image signal (transmitted electron image) is displayed on the image display monitor 1220 and the analysis monitor 1221, which correspond to the display device DSPL.

[0118] Camera 1209 is located at the bottom of the EQP instrument. Camera 1209 has a direct electron detector 1200, which corresponds to the image sensor 101. At least a portion of camera 1209 is located inside the camera 1209 so that it is exposed to the vacuum space formed by the vacuum chamber 1201.

[0119] The electron source control device 1211, the irradiation lens control device 1212, the objective lens control device 1213, the magnification lens system control device 1214, and the holder control device 1215 are each connected to the image processing device 1218. This allows for the exchange of data between them to set the imaging conditions of the electron microscope. For example, the electron beam irradiation rate can be set to 0.5 electrons / pix / frm or less. In this case, the electron source control device 1211 and the image processing device 1218 function as control means for controlling the radiation irradiation rate. Signals from the image processing device 1218 allow for the driving control of the sample holder and the setting of observation conditions for each lens.

[0120] The operator prepares the sample S to be photographed and sets the imaging conditions using the input device 1219 connected to the image processing device 1218. The operator inputs predetermined data to the electron source control device 1211, the irradiation lens control device 1212, the objective lens control device 1213, and the magnification lens system control device 1214, respectively, to obtain the desired acceleration voltage, magnification, and observation mode. The operator also inputs conditions such as the number of continuous field images, the starting position for imaging, and the movement speed of the sample holder to the image processing device 1218 using the input device 1219, such as a mouse, keyboard, or touch panel. The image processing device 1218 may also be configured to automatically set the conditions without operator input. The radiation imaging system described in Embodiment 7 is merely illustrative, and the semiconductor devices described in Embodiments 1 to 5 may be applied to other systems.

[0121] Furthermore, the above embodiments describe an example in which a method for determining the background component of the pixel signal simultaneously with imaging is applied to a radiation detector or radiation imaging system. However, the methods described in each embodiment may also be applied to a detector using a SPAD (single-photon avalanche diode) and an imaging system equipped therewith. This makes it possible to determine the background component simultaneously with imaging and remove the background component from the image data.

[0122] [Other embodiments] It should be noted that the present invention is not limited to the embodiments described above, and many modifications are possible within the technical concept of the present invention. For example, all or part of the different embodiments described above may be combined and implemented.

[0123] For example, the first connection point BP1 can be covered with the third member 600 as in Embodiment 1, and the second connection point BP2 can be covered with the second member 500 as in Embodiment 2. Alternatively, the first connection point BP1 can be covered with the first member 400 as in Embodiment 2, and the second connection point BP2 can be covered with the third member 600 as in Embodiment 1.

[0124] The first member 400 does not have to cover the first electrode 110, or it may cover part or all of the first electrode 110. The second member 500 does not have to cover the second electrode 210, or it may cover part or all of the second electrode 210. The third member 600 may cover part or all of the wiring 300.

[0125] Furthermore, the second substrate 200 may have an opening smaller than the external dimensions of the first substrate 100 on the island surface on which the first substrate 100 is mounted.

[0126] Furthermore, as in Embodiment 3, a recess may be provided on the second substrate 200 for mounting the first substrate 100, and a recess may be provided on the second substrate 200 for forming the second electrode 210, as in the second example of Embodiment 2.

[0127] The applications of the semiconductor devices described in each embodiment are not limited to imaging only. For example, they can also be applied to distance measuring devices (devices for distance measurement using focus detection or TOF (Time of Flight)), photometric devices (devices for measuring the amount of incident light, etc.).

[0128] The photoelectric conversion device to which the present invention can be applied is not limited to a specific form, and may be, for example, a front-illuminated sensor or a back-illuminated sensor. Alternatively, it may be a stacked type photoelectric conversion device in which a semiconductor chip equipped with a light-receiving section and a semiconductor chip equipped with an electrical circuit such as a logic circuit are stacked.

[0129] The display device to which the present invention can be applied is not limited to a specific form, and may be, for example, an organic EL device. The light-emitting device to which the present invention can be applied is not limited to a specific form, and may be, for example, an LED array or an LD array.

[0130] Various devices equipped with a semiconductor device according to the embodiment are also included in the embodiments of the present invention. The device according to the embodiment may include at least one of the following six: an optical device corresponding to the semiconductor device, a control device for controlling the semiconductor device, a processing device for processing information obtained from the semiconductor device, a display device for displaying information obtained from the semiconductor device, a storage device for storing information obtained from the semiconductor device, and a mechanical device that operates based on information obtained from the semiconductor device.

[0131] This specification discloses at least the following: [Item 1] The first substrate is a semiconductor chip, A second board equipped with an electrical circuit and on which the first board is mounted, The first substrate comprises an effective element region and a first electrode disposed between the effective element region and the outer edge of the first substrate, wherein a first resin member is disposed on the outer edge side of the first substrate relative to the effective element region. The second substrate includes a second electrode positioned between the mounting position of the first substrate and the outer edge of the second substrate, and a second resin component is positioned on the outer edge side of the second substrate relative to the mounting position of the first substrate. A third resin member is positioned between the first member and the second member, in contact with the first member and the second member. The third member is not positioned closer to the effective element region than the first member, nor is it positioned closer to the outer edge of the second substrate than the second member. The first electrode and the second electrode are electrically connected via wiring. The connection between the wiring and the first electrode is covered by the first member or the third member. The connection between the wiring and the second electrode is covered by the second member or the third member. The wiring is covered over its entire length, from the connection point with the first electrode to the connection point with the second electrode, by a resin member including at least the third member. A semiconductor device characterized by the following features. [Matter 2] The first member, the second member, and the third member are made of substantially the same type of material. A semiconductor device as described in item 1, characterized by the features described above. [Matter 3] The first member, the second member, and the third member have substantially the same elastic modulus. A semiconductor device according to item 1 or 2, characterized by the above. [Matter 4] The elastic modulus of the third member is smaller than at least one of the elastic modulus of the first member and the elastic modulus of the second member. A semiconductor device as described in item 1, characterized by the features described above. [Matter 5] The first member is positioned inward from the outer edge of the first substrate. A semiconductor device according to any one of items 1 to 4, characterized by the features described herein. [Matter 6] The first member covers the connection between the wiring and the first electrode. A semiconductor device according to any one of items 1 to 5, characterized by the features described herein. [Matter 7] The first member covers at least a portion of the first electrode, A semiconductor device according to any one of items 1 to 6, characterized by the features described herein. [Matter 8] The second member covers the connection between the wiring and the second electrode. A semiconductor device as described in any one of items 1 to 7, characterized by the features described herein. [Matter 9] The second member covers at least a portion of the second electrode, A semiconductor device according to any one of items 1 to 8, characterized by the features described herein. [Matter 10] In a direction perpendicular to the main surface of the first substrate, the height of the first member is greater than the height of the wiring. A semiconductor device according to any one of items 1 to 9, characterized by the features described herein. [Matter 11] The second substrate has a recess, and the second electrode is disposed in the recess. A semiconductor device according to any one of items 1 to 10, characterized by the features described herein. [Matter 12] The second member is in contact with the first substrate. A semiconductor device according to any one of items 1 to 10, characterized by the features described herein. [Matter 13] The second substrate has a recess, and the first substrate is mounted in the recess. A semiconductor device according to any one of items 1 to 12, characterized by the features described herein. [Matter 14] The second substrate includes a base substrate and a third substrate bonded to the base substrate. The third substrate includes a third electrode positioned between the mounting position of the first substrate and the outer edge of the third substrate, and a fourth resin member is positioned on the outer edge side of the third substrate relative to the mounting position of the first substrate. A third member is positioned between the first member and the fourth member, in contact with both the first and fourth members, and the third member is not positioned further outward than the fourth member on the outer edge side of the third substrate. A semiconductor device according to any one of items 1 to 10, characterized by the features described herein. [Matter 15] The first substrate includes a photoelectric conversion element or a light-emitting element in the effective element region. A semiconductor device as described in any one of items 1 to 14, characterized by the features described herein. [Matter 16] The first substrate comprises a semiconductor device described in any one of items 1 to 14, and an optical device corresponding to the semiconductor device, wherein the first substrate includes a photoelectric conversion element in the effective element region. An imaging device characterized by the following features. [Matter 17] A radiation source that irradiates the object to be imaged with radiation, A semiconductor device described in any one of items 1 to 15, A radiation imaging system characterized by having the following features. [Matter 18] A semiconductor device described in any one of items 1 to 15, Optical device corresponding to the aforementioned semiconductor device, Control device for controlling the aforementioned semiconductor device, A processing device for processing information obtained from the aforementioned semiconductor device, A display device that displays information obtained from the aforementioned semiconductor device, A memory device for storing information obtained from the aforementioned semiconductor device, and A mechanical device that operates based on information obtained from the aforementioned semiconductor device, A device comprising at least one of the six of the following, A device characterized by the following features. [Matter 19] A mounting process involves mounting a first substrate, which is a semiconductor chip comprising an active element region and a first electrode, onto a second substrate comprising a second electrode and an electrical circuit. A connection step of electrically connecting the first electrode and the second electrode by wiring, The process includes, in this order, a covering step of covering the aforementioned wiring with a resin component, The first electrode is positioned between the effective element region and the outer edge of the first substrate. The second electrode is positioned between the mounting location of the first substrate and the outer edge of the second substrate. The coating process is as follows: A step of placing a first resin member on the outer edge side of the first substrate, beyond the effective element region, and curing it, A step of placing a second resin component on the outer edge side of the second substrate, closer to the position where the first substrate is mounted, and curing it, The process includes placing a third resin member, having a viscosity lower than the viscosity of the first member before curing and the viscosity of the second member before curing, between the cured first member and the cured second member, and curing them. The connection between the wiring and the first electrode is covered by the first member or the third member. The connection between the wiring and the second electrode is covered by the second member or the third member. The entire area of ​​the wiring from the connection point with the first electrode to the connection point with the second electrode is covered with a resin member that includes at least the third member. A method for manufacturing a semiconductor device, characterized by the following: [Matter 20] In the coating process, The third member is not positioned closer to the effective element region than the first member, nor is it positioned closer to the outer edge of the second substrate than the second member. A method for manufacturing a semiconductor device as described in item 19. [Matter 21] In the coating process, The first member, the second member, and the third member are made of substantially the same type of resin material. A method for manufacturing a semiconductor device as described in item 19 or 20. [Matter 22] The first member, the second member, and the third member have substantially the same elastic modulus after curing. A method for manufacturing a semiconductor device as described in any one of items 19 to 21. [Matter 23] The elastic modulus of the third member after curing is smaller than at least one of the elastic modulus of the first member after curing and the elastic modulus of the second member after curing. A method for manufacturing a semiconductor device as described in item 19 or 20. [Matter 24] In the coating process, A third member is placed between the cured first member and the cured second member, with a temperature higher than the temperature of the first member before curing and the temperature of the second member before curing. A method for manufacturing a semiconductor device as described in any one of items 19 to 23. [Matter 25] In the coating process, At least one of the first member, the second member, and the third member is made of an ultraviolet-curing resin. A method for manufacturing a semiconductor device as described in any one of items 19 to 24. [Matter 26] In the coating process, The first member is positioned inward from the outer edge of the first substrate. A method for manufacturing a semiconductor device according to any one of items 19 to 25, characterized by the features described herein. [Matter 27] In the coating process, The first member covers the connection between the wiring and the first electrode. A method for manufacturing a semiconductor device as described in any one of items 19 to 26. [Matter 28] In the coating process, The first member covers at least a portion of the first electrode, A method for manufacturing a semiconductor device as described in any one of items 19 to 27. [Matter 29] In the coating process, The second member covers the connection between the wiring and the second electrode. A method for manufacturing a semiconductor device as described in any one of items 19 to 28. [Matter 30] In the coating process, The second member covers at least a portion of the second electrode, A method for manufacturing a semiconductor device as described in any one of items 19 to 29. [Matter 31] In the coating process, In a direction perpendicular to the main surface of the first substrate, the height of the first member is made greater than the height of the wiring. A method for manufacturing a semiconductor device as described in any one of items 19 to 30, characterized by the features described herein. [Matter 32] The second substrate has a recess, and the second electrode is disposed in the recess. A method for manufacturing a semiconductor device as described in any one of items 19 to 31, characterized by the features described herein. [Matter 33] In the coating process, The second member is brought into contact with the first substrate. A method for manufacturing a semiconductor device as described in any one of items 19 to 31, characterized by the features described herein. [Matter 34] The aforementioned second substrate has a recess, In the mounting process, the first substrate is mounted in the recess. A method for manufacturing a semiconductor device as described in any one of items 19 to 33. [Matter 35] The first substrate includes a photoelectric conversion element or a light-emitting element in the effective element region. A method for manufacturing a semiconductor device as described in any one of items 19 to 34, characterized by the features described herein. [Explanation of Symbols]

[0132] 100...First substrate / 110, 110A, 110B...First electrode / 120...Effective element area / 200...Second substrate / 210, 210A, 210B...Second electrode / 300...Wiring / 400...First component / 500...Second component / 600...Third component / 700...Third component / 710...Second electrode / 900...Base substrate / BP1, BP1A, BP1B...Connection point / BP2, BP2A, BP2B...Connection point

Claims

1. The first substrate is a semiconductor chip, A second board equipped with an electrical circuit and on which the first board is mounted, The first substrate comprises an effective element region and a first electrode disposed between the effective element region and the outer edge of the first substrate, wherein a first resin member is disposed on the outer edge side of the first substrate relative to the effective element region. The second substrate includes a second electrode positioned between the mounting position of the first substrate and the outer edge of the second substrate, and a second resin member is positioned on the outer edge side of the second substrate relative to the mounting position of the first substrate. A third resin member is positioned between the first member and the second member, in contact with the first member and the second member. The third member is not positioned closer to the effective element region than the first member, nor is it positioned closer to the outer edge of the second substrate than the second member. The first electrode and the second electrode are electrically connected via wiring. The connection between the wiring and the first electrode is covered by the first member or the third member. The connection between the wiring and the second electrode is covered by the second member or the third member. The wiring is covered over its entire length, from the connection point with the first electrode to the connection point with the second electrode, by a resin member including at least the third member. A semiconductor device characterized by the following features.

2. The first member, the second member, and the third member are made of substantially the same type of material. The semiconductor device according to feature 1.

3. The first member, the second member, and the third member have substantially the same elastic modulus. The semiconductor device according to feature 1.

4. The elastic modulus of the third member is smaller than at least one of the elastic modulus of the first member and the elastic modulus of the second member. The semiconductor device according to feature 1.

5. The first member is positioned inward from the outer edge of the first substrate. A semiconductor device according to any one of claims 1 to 4.

6. The first member covers the connection between the wiring and the first electrode. A semiconductor device according to any one of claims 1 to 4.

7. The first member covers at least a portion of the first electrode, A semiconductor device according to any one of claims 1 to 4.

8. The second member covers the connection between the wiring and the second electrode. A semiconductor device according to any one of claims 1 to 4.

9. The second member covers at least a portion of the second electrode, A semiconductor device according to any one of claims 1 to 4.

10. In a direction perpendicular to the main surface of the first substrate, the height of the first member is greater than the height of the wiring. A semiconductor device according to any one of claims 1 to 4.

11. The second substrate has a recess, and the second electrode is disposed in the recess. A semiconductor device according to any one of claims 1 to 4.

12. The second member is in contact with the first substrate. A semiconductor device according to any one of claims 1 to 4.

13. The second substrate has a recess, and the first substrate is mounted in the recess. A semiconductor device according to any one of claims 1 to 4.

14. The second substrate includes a base substrate and a third substrate bonded to the base substrate. The third substrate includes a third electrode positioned between the mounting position of the first substrate and the outer edge of the third substrate, and a fourth resin member is positioned on the outer edge side of the third substrate relative to the mounting position of the first substrate. A third member is positioned between the first member and the fourth member, in contact with both the first and fourth members, and the third member is not positioned further outward than the fourth member on the outer edge side of the third substrate. A semiconductor device according to any one of claims 1 to 4.

15. The first substrate includes a photoelectric conversion element or a light-emitting element in the effective element region. A semiconductor device according to any one of claims 1 to 4.

16. A semiconductor device according to any one of claims 1 to 4, and an optical device corresponding to the semiconductor device, wherein the first substrate is provided with a photoelectric conversion element in the effective element region, An imaging device characterized by the following features.

17. A radiation source that irradiates the object to be imaged with radiation, A semiconductor device according to any one of claims 1 to 4, A radiation imaging system characterized by having the following features.

18. A semiconductor device according to any one of claims 1 to 4, Optical device corresponding to the aforementioned semiconductor device, Control device for controlling the aforementioned semiconductor device, A processing device for processing information obtained from the aforementioned semiconductor device, A display device that displays information obtained from the aforementioned semiconductor device, A memory device for storing information obtained from the aforementioned semiconductor device, and A mechanical device that operates based on information obtained from the aforementioned semiconductor device, A device comprising at least one of the six of the following, A device characterized by the following features.

19. A mounting process involves mounting a first substrate, which is a semiconductor chip comprising an active element region and a first electrode, onto a second substrate comprising a second electrode and an electrical circuit. A connection step of electrically connecting the first electrode and the second electrode by wiring, The process includes, in this order, a covering step of covering the aforementioned wiring with a resin component, The first electrode is positioned between the effective element region and the outer edge of the first substrate. The second electrode is positioned between the mounting position of the first substrate and the outer edge of the second substrate. The coating process is as follows: A step of placing a first resin member on the outer edge side of the first substrate, beyond the effective element region, and curing it, A step of placing a second resin member on the outer edge side of the second substrate, closer to the position where the first substrate is mounted, and curing it, The process includes placing a third resin member, having a viscosity lower than the viscosity of the first member before curing and the viscosity of the second member before curing, between the cured first member and the cured second member, and curing them. The connection between the wiring and the first electrode is covered by the first member or the third member. The connection between the wiring and the second electrode is covered by the second member or the third member. The entire area of ​​the wiring from the connection point with the first electrode to the connection point with the second electrode is covered with a resin member that includes at least the third member. A method for manufacturing a semiconductor device, characterized by the following:

20. In the coating process, The third member is not positioned closer to the effective element region than the first member, nor is it positioned closer to the outer edge of the second substrate than the second member. The method for manufacturing a semiconductor device according to claim 19.

21. In the coating process, The first member, the second member, and the third member are made of substantially the same type of resin material. The method for manufacturing a semiconductor device according to claim 19.

22. The first member, the second member, and the third member have substantially the same elastic modulus after curing. The method for manufacturing a semiconductor device according to claim 19.

23. The elastic modulus of the third member after curing is smaller than at least one of the elastic modulus of the first member after curing and the elastic modulus of the second member after curing. The method for manufacturing a semiconductor device according to claim 19.

24. In the coating process, A third member is placed between the cured first member and the cured second member, with a temperature higher than the temperature of the first member before curing and the temperature of the second member before curing. A method for manufacturing a semiconductor device according to any one of claims 19 to 23.

25. In the coating process, At least one of the first member, the second member, and the third member is made of an ultraviolet-curing resin. A method for manufacturing a semiconductor device according to any one of claims 19 to 23.

26. In the coating process, The first member is positioned inward from the outer edge of the first substrate. A method for manufacturing a semiconductor device according to any one of claims 19 to 23.

27. In the coating process, The first member covers the connection between the wiring and the first electrode. A method for manufacturing a semiconductor device according to any one of claims 19 to 23.

28. In the coating process, The first member covers at least a portion of the first electrode, A method for manufacturing a semiconductor device according to any one of claims 19 to 23.

29. In the coating process, The second member covers the connection between the wiring and the second electrode. A method for manufacturing a semiconductor device according to any one of claims 19 to 23.

30. In the coating process, The second member covers at least a portion of the second electrode, A method for manufacturing a semiconductor device according to any one of claims 19 to 23.

31. In the coating process, In a direction perpendicular to the main surface of the first substrate, the height of the first member is made greater than the height of the wiring. A method for manufacturing a semiconductor device according to any one of claims 19 to 23.

32. The second substrate has a recess, and the second electrode is disposed in the recess. A method for manufacturing a semiconductor device according to any one of claims 19 to 23.

33. In the coating process, The second member is brought into contact with the first substrate. A method for manufacturing a semiconductor device according to any one of claims 19 to 23.

34. The aforementioned second substrate has a recess, In the mounting process, the first substrate is mounted in the recess. A method for manufacturing a semiconductor device according to any one of claims 19 to 23.

35. The first substrate includes a photoelectric conversion element or a light-emitting element in the effective element region. A method for manufacturing a semiconductor device according to any one of claims 19 to 23.

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