Semiconductor memory
The semiconductor memory device addresses integration challenges by optimizing the alignment and connectivity of conductive layers and semiconductor pillars through a structured design with varying widths and alignments, resulting in improved performance and efficiency.
JP2026055172APending Publication Date: 2026-03-31KIOXIA CORP
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2024-09-18
- Publication Date
- 2026-03-31
AI Technical Summary
Technical Problem
Existing semiconductor memory devices face challenges in integration due to limitations in design that hinder efficient stacking and connectivity of conductive layers and semiconductor pillars.
Method used
The semiconductor memory device incorporates a unique structure with semiconductor columns and contact electrodes that have varying widths and alignments in the stacking direction, enhancing integration by optimizing the alignment and connectivity of conductive layers and semiconductor pillars.
Benefits of technology
This design facilitates improved integration and connectivity, leading to enhanced performance and efficiency in semiconductor memory devices.
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Smart Images
Figure 2026055172000001_ABST
Abstract
To provide a semiconductor memory device that is easily integrated. [Solution] The semiconductor memory device comprises a plurality of conductive layers stacked in the stacking direction, a semiconductor column stretched in the stacking direction and facing the plurality of conductive layers, a charge storage film provided between the plurality of conductive layers and the semiconductor column, a bit line provided on one side of the plurality of conductive layers in the stacking direction and connected to the semiconductor column, and a contact electrode stretched in the stacking direction and connected to the bit line side surface of one of the plurality of conductive layers. The semiconductor column includes a plurality of first parts aligned in the stacking direction, and the width of the end on the bit line side in the stacking direction is greater than the width of the end on the opposite side of the bit line in the stacking direction of the plurality of first parts. The contact electrode includes a plurality of second parts aligned in the stacking direction, and the width of the end on the bit line side in the stacking direction is greater than the width of the end on the opposite side of the bit line in the stacking direction of the plurality of second parts. The number of second parts included in the contact electrode is greater than the number of first parts included in the semiconductor column.
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Citation Information
Patent Citations
Semiconductor storage device
JP2021150408A