Method for manufacturing semiconductor devices and semiconductor manufacturing apparatus

Abstract

To provide a method for manufacturing a semiconductor device that can suppress the peeling of the peripheral portion of the adhesive used to bond the semiconductor substrate and the support substrate during the manufacturing process of the semiconductor device. [Solution] The method for manufacturing a semiconductor device according to the embodiment involves bonding a semiconductor substrate having a first surface including a pattern region on which a device pattern is provided, a second surface opposite to the first surface, and bevel portions located at the periphery of the first and second surfaces, with an adhesive layer continuously formed on the first surface and the bevel portion, and a support substrate having a third surface including a release layer region on which a release layer is formed, such that the first surface and the third surface are bonded together via the adhesive layer, and with the semiconductor substrate and the support substrate bonded together by the adhesive layer, at least the bevel portion and the portion of the adhesive layer formed on the bevel portion are removed from the semiconductor substrate.

Description

Technical Field

[0001] Embodiments of the present invention relate to a method for manufacturing a semiconductor device and a semiconductor manufacturing apparatus.

Background Art

[0002] As a technique for supporting thinning of a semiconductor wafer, a method for manufacturing a semiconductor device has been proposed in which a glass substrate as a support substrate and a semiconductor wafer as a semiconductor substrate are bonded via an adhesive layer made of an adhesive.

[0003] In this conventional method for manufacturing a semiconductor device, the adhesive attached to the bevel portion at the periphery of the semiconductor wafer may be peeled off in a whisker shape, for example, when grinding the back surface of the semiconductor wafer in a thinning process after bonding. The thus peeled adhesive may remain in the semiconductor manufacturing apparatus and may cause problems such as deposition on the filter of the circulation system apparatus.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Patent Document 2

Patent Document 3

Summary of the Invention

Problems to be Solved by the Invention

[0005] [[ID=**47**]]An object of one embodiment is to provide a method for manufacturing a semiconductor device and a semiconductor manufacturing apparatus capable of suppressing peeling of the peripheral portion of an adhesive that bonds a semiconductor substrate and a support substrate during the manufacturing process of the semiconductor device.

Means for Solving the Problems

[0006] A method for manufacturing a semiconductor device according to one embodiment is characterized by bonding a semiconductor substrate having a first surface including a pattern region on which a device pattern is provided, a second surface opposite to the first surface, and bevel portions located at the periphery of the first surface and the second surface, with an adhesive layer continuously formed on the first surface and the bevel portion, and a support substrate having a third surface including a release layer region on which a release layer is formed, such that the first surface and the third surface are bonded together via the adhesive layer, and then removing at least the bevel portion and the portion of the adhesive layer formed on the bevel portion from the semiconductor substrate while the semiconductor substrate and the support substrate are bonded together by the adhesive layer. [Brief explanation of the drawing]

[0007] [Figure 1] Figure 1 shows an example of the configuration of a semiconductor manufacturing apparatus according to an embodiment. [Figure 2] Figure 2 is a cross-sectional view showing an example of a bonded structure in which a semiconductor wafer processed by the semiconductor manufacturing apparatus shown in Figure 1 is bonded to a support substrate. [Figure 3] Figure 3 is a cross-sectional view showing an example of the process of forming a device pattern on a semiconductor wafer in the semiconductor device manufacturing method according to the embodiment. [Figure 4] Figure 4 is a cross-sectional view showing an example of a step in forming a release layer on a support substrate in a method for manufacturing a semiconductor device according to an embodiment. [Figure 5] Figure 5 is a cross-sectional view showing an example of a bonding process in which a semiconductor wafer and a support substrate are bonded together in a semiconductor device manufacturing method according to the embodiment. [Figure 6] Figure 6 is a cross-sectional view showing an example of a step in the semiconductor device manufacturing method according to the embodiment, in which a region including the bevel portion of a semiconductor wafer is trimmed. [Figure 7] Figure 7 is a cross-sectional view showing an example of a step in the semiconductor device manufacturing method according to the embodiment described in Figure 6, in which a region including the bevel portion of a semiconductor wafer is trimmed. [Figure 8]Figure 8 is a cross-sectional view showing an example of the edge of a configuration in which a semiconductor wafer and a support substrate are bonded together with adhesive after the trimming process shown in Figure 7 has been completed. [Figure 9] Figure 9 shows an example of a process flow for the semiconductor device manufacturing method according to the embodiment. [Figure 10] Figure 10 is a cross-sectional view showing an example of a step in the manufacturing method of a semiconductor device according to the first modified example, in which a region including the bevel portion of a semiconductor wafer is trimmed. [Figure 11] Figure 11 is a cross-sectional view showing an example of a step in the manufacturing method of a semiconductor device according to a second modified example, in which a region including the bevel portion of a semiconductor wafer is trimmed. [Figure 12] Figure 12 is a cross-sectional view showing an example of a step in the semiconductor device manufacturing method according to the third modified example, in which a region including the bevel portion of a semiconductor wafer is trimmed. [Modes for carrying out the invention]

[0008] The semiconductor manufacturing apparatus and semiconductor device manufacturing method according to the embodiments will be described in detail below with reference to the attached drawings. However, the present invention is not limited to these embodiments.

[0009] (Embodiment) As previously described, in the manufacturing method of semiconductor devices, there is a thinning process in which a semiconductor substrate is bonded to a thick support substrate with an adhesive and then ground. By bonding it to a thick support substrate, the flatness of the semiconductor wafer during grinding can be maintained well, and the semiconductor wafer can be thinned uniformly. The thinned semiconductor substrate, while still bonded to the support substrate, undergoes necessary processing such as circuit pattern formation on the ground surface, is then peeled off the support substrate, and undergoes a dicing process to be formed into chips. In this embodiment, we will describe an example of a configuration including a semiconductor manufacturing apparatus and a semiconductor substrate to be ground, which is used in the thinning process of thinning a semiconductor substrate, which is one of the processes for manufacturing a semiconductor device, and we will also describe an example of a method for manufacturing a semiconductor device using this semiconductor manufacturing apparatus.

[0010] [Semiconductor manufacturing apparatus] FIG. 1 is a diagram showing an example of the configuration of a semiconductor manufacturing apparatus according to an embodiment. The semiconductor manufacturing apparatus 100 shown in FIG. 1 is an apparatus used in a thinning process for thinning a semiconductor substrate W, among the processes for manufacturing a semiconductor device. Further, FIG. 2 is a cross-sectional view showing an example of a bonding structure in which a semiconductor wafer processed by the semiconductor manufacturing apparatus shown in FIG. 1 and a support substrate are bonded together.

[0011] For example, as shown in FIG. 1, this semiconductor manufacturing apparatus 100 includes a stage T, a grinding blade B, and a control unit CON.

[0012] [Stage] The stage T is a rotating means for fixing and rotating a bonding structure WG (FIG. 2) in which a semiconductor substrate W and a support substrate G described later are bonded together. This stage T is configured to fix the semiconductor substrate W or the support substrate G of the bonding structure WG by suction or the like. Then, as shown in FIG. 1 for example, the stage T rotates about a rotation axis R parallel to the Z direction, so that the bonding structure WG fixed to the upper surface parallel to the X direction and Y direction of the stage T is rotated about the rotation axis R.

[0013] [Grinding blade] The grinding blade B is a grinding means for grinding the end portion of the bonding structure WG.

[0014] [Control unit] The control unit CON is a control means for controlling the rotation operation of the stage T and controlling the displacement and grinding operation of the grinding blade B.

[0015] This control unit CON controls the rotation operation of the stage T and controls the displacement and grinding operation of the grinding blade in a state where the bonding structure WG is placed on the stage T, and grinds at least the bevel portion WB shown in FIG. 2 and the portion formed in the bevel portion WB of the adhesive layer Q by the grinding blade, so as to remove them from the semiconductor substrate W.

[0016] ][Lamination structure] Here, with particular reference to Figure 2, we will describe an example of the detailed configuration of a bonded structure WG formed by bonding a semiconductor substrate W and a support substrate G, which is processed by the semiconductor manufacturing apparatus 100 described above.

[0017] The bonded structure WG includes, for example, a semiconductor substrate W, a support substrate G, and an adhesive layer Q, as shown in Figure 2. This bonded structure WG is constructed by bonding the semiconductor substrate W and the support substrate G together via the adhesive layer Q.

[0018] [Semiconductor substrates] The semiconductor substrate W is, for example, a semiconductor wafer. The material of this semiconductor substrate W is a semiconductor material such as silicon, sapphire, or GaAs (gallium arsenide).

[0019] As shown in Figure 2, for example, this semiconductor substrate W has a first surface (front) W1 which is a main surface including a pattern region PA on which a device pattern P such as a semiconductor element is provided, a second surface (back) W2 which is a main surface on the opposite side of the first surface W1, and a bevel portion WB located at the periphery of the first surface W1 and the second surface W2.

[0020] Furthermore, as shown in Figure 2, for example, the semiconductor substrate W has an adhesive layer Q continuously formed on the first surface W1, which includes a pattern region PA and a non-pattern formation region NA, and on the bevel portion WB. In particular, the device pattern P in the pattern region PA is covered by the adhesive layer Q on the first surface of the semiconductor substrate W.

[0021] The non-pattern formation region NA is located between the outer periphery of the pattern region PA of the semiconductor substrate W and the region BA of the bevel portion WB, as shown in Figure 2, for example. This non-pattern formation region NA is a region where device patterns P, such as semiconductor elements, are not formed.

[0022] [Adhesive layer] As previously described, the adhesive layer Q is formed continuously on the first surface W1 and the bevel portion WB of the semiconductor substrate W, as shown in Figure 2.

[0023] The adhesive layer Q is made from an adhesive that is soluble in an organic solvent, such as an acrylic resin, a hydrocarbon resin (polycycloolefin resin, terpene resin, petroleum resin, etc.), or a novolac-type phenolic resin. The adhesive layer Q is formed by applying such an adhesive to the surface of the semiconductor substrate W.

[0024] The bonded structure WG is constructed by bonding the first surface W1 of the semiconductor substrate W and the third surface G1 of the support substrate G together via an adhesive layer Q.

[0025] [Support substrate] The support substrate G has the function of reinforcing and supplementing the mechanical strength of the semiconductor substrate W when the semiconductor substrate W is subjected to processing such as thinning or circuit pattern formation, or when the semiconductor substrate W is transported for processing, and also maintains its flatness.

[0026] This support substrate G is, for example, a glass substrate. However, the material of this support substrate G is not limited to glass; for example, it may be silicon, alumina, silicon carbide, aluminum, stainless steel, resin, etc. The shape of the support substrate G is determined appropriately according to the shape of the semiconductor substrate W to be supported. The thickness of the support substrate G is determined appropriately according to the material, required strength, etc.

[0027] As shown in Figure 2, for example, the support substrate G has a third surface (front) G1 which is a main surface including a delamination layer region HA on which the delamination layer H is formed, a fourth surface (back) G2 which is a main surface on the opposite side of the third surface G1, and an end GE located at the periphery of the third surface G1 and the fourth surface G2.

[0028] [Exfoliation layer] Furthermore, a release layer H made of a non-peelable resin or the like that does not exhibit adhesion to the adhesive layer Q is provided in the release layer region HA in the central part of the third surface G1 of the support substrate G.

[0029] It is preferable that this release layer H be formed over as wide an area as possible, within a range that prevents the semiconductor substrate W, which is bonded to the surface of the support substrate G by the adhesive layer Q, from peeling off during processing such as thinning or during transport.

[0030] In particular, as shown in Figure 2, the semiconductor substrate W and the support substrate G are bonded together such that all of the pattern region PA on the first surface W1 of the semiconductor substrate W, where the device pattern P is provided, faces the release layer region HA on the third surface G1 of the support substrate G, where the release layer H is formed.

[0031] As previously described, as shown in Figure 2, the bonded structure WG is constructed by bonding the first surface W1 of the semiconductor substrate W and the third surface G1 of the support substrate G together via an adhesive layer Q.

[0032] In particular, as shown in Figure 2, the semiconductor substrate W and the support substrate G are bonded together such that a perpendicular line M, parallel to the Z-direction of the first surface W1 passing through the center of the first surface W1 of the semiconductor substrate W, passes through the center of the third surface G1 of the support substrate G. The range defined as the perpendicular line M passing through the center of the third surface G1 of the support substrate G is, for example, a range that allows for a deviation of several tens of microns from the desired bonding position between the semiconductor substrate W and the support substrate G. Furthermore, when the bonded structure WG is trimmed by the semiconductor manufacturing apparatus 100 shown in Figure 1, the bonded structure WG is placed on the stage T such that the perpendicular line M coincides with the rotation axis R of the stage T.

[0033] Furthermore, as shown in Figure 2, in the bonded structure WG, the semiconductor substrate W has an average diameter in the direction parallel to the first surface W1 (X direction) which is a first value d1. The support substrate G has an average diameter in the direction parallel to the third surface G1 (X direction) which is a second value d2. The first value d1 is set to be greater than the second value d2. The second value d2 is set to be longer than the distance of the pattern region PA of the semiconductor substrate W in the direction parallel to the first surface W1 (X direction).

[0034] In other words, in the example shown in Figure 2, with the semiconductor substrate W and the support substrate G bonded together by an adhesive layer Q, the peripheral edge GE of the support substrate G is located in the region closer to the periphery of the semiconductor substrate W than the outer edge of the pattern region PA of the semiconductor substrate W, when viewed from the direction perpendicular to the first surface W1 (Z direction), in the direction parallel to the first surface W1 (X direction).

[0035] In particular, the semiconductor substrate W has a third value d3, which is the average diameter of the region including the non-patterned region NA (excluding the bevel region WB) and the patterned region PA in the direction parallel to the first surface W1 of the semiconductor substrate W (X direction). The second value d2, as described above, is set to be smaller than the third value d3.

[0036] In other words, with the semiconductor substrate W and the support substrate G bonded together by the adhesive layer Q, the peripheral edge GE of the support substrate G is located in a non-pattern formation region NA between the outer periphery of the pattern region PA of the semiconductor substrate W and the region BA of the bevel portion WB, in a plan view in the direction perpendicular to the first surface W1 of the semiconductor substrate W (Z direction), and in a direction parallel to the first surface W1 of the semiconductor substrate W (X, Y directions).

[0037] [Manufacturing method for semiconductor devices] Next, a method for manufacturing a semiconductor device using the semiconductor manufacturing apparatus 100 according to this embodiment will be described with reference to Figures 3 to 9, including a process for the bonded structure WG in which a semiconductor substrate W is bonded to the surface of a support substrate G via an adhesive layer Q as described above.

[0038] Here, Figure 3 is a cross-sectional view showing an example of the process of forming a device pattern on a wafer in the semiconductor device manufacturing method according to the embodiment. Figure 4 is a cross-sectional view showing an example of the process of forming a release layer on a support substrate in the semiconductor device manufacturing method according to the embodiment. Figure 5 is a cross-sectional view showing an example of the bonding process of bonding a semiconductor substrate and a support substrate in the semiconductor device manufacturing method according to the embodiment. Figure 6 is a cross-sectional view showing an example of the process of trimming the region including the bevel portion of the semiconductor substrate in the semiconductor device manufacturing method according to the embodiment. Figure 7 is a cross-sectional view showing an example of the process of trimming the region including the bevel portion of the semiconductor substrate in the semiconductor device manufacturing method according to the embodiment, following Figure 6. Figure 8 is a cross-sectional view showing an example of the end of a configuration in which the semiconductor substrate and the support substrate are bonded with adhesive after the trimming process shown in Figure 7 is completed. Figure 9 is a diagram showing an example of the process flow of the semiconductor device manufacturing method according to the embodiment.

[0039] First, in a step prior to the thinning process, a device pattern P is formed on the semiconductor substrate W, for example, as shown in Figure 3. This prepares a semiconductor substrate W having a first surface W1, a second surface W2, and a bevel portion WB that include a pattern area on which the device pattern P is provided (step S1 in Figure 9).

[0040] On the other hand, for example, as shown in Figure 4, a release layer H is formed on the support substrate G. This prepares a support substrate G having a third surface G1, a fourth surface G2, and an end surface GE located at the periphery of the third surface G1 and the fourth surface G2, which include a release layer region HA where the release layer H is formed (step S1 in Figure 9).

[0041] Next, an adhesive layer Q is continuously formed on the first surface W1 and the bevel portion WB of the semiconductor substrate W (step S2 in Figure 9). The adhesive constituting the adhesive layer Q is applied using, for example, a coating device (not shown) such as a spin coater while rotating the semiconductor substrate W.

[0042] Then, for example, as shown in Figure 5, a semiconductor substrate W on which an adhesive layer Q is continuously formed on the first surface W1 and the bevel portion WB, and a support substrate G on which a release layer H is formed are bonded together such that the first surface W1 of the semiconductor substrate W and the third surface G1 of the support substrate G are bonded together via the adhesive layer Q (step S3 in Figure 9).

[0043] As described above, the semiconductor substrate W and the support substrate G are bonded together such that all of the pattern region PA on the first surface W1 of the semiconductor substrate W, where the device pattern P is provided, faces the release layer region HA on the third surface G1 of the support substrate G, where the release layer H is formed.

[0044] Next, for example, as shown in Figure 6, the fourth surface G2 of the support substrate G of the bonded structure WG is fixed to the stage T of the semiconductor manufacturing apparatus 100 (step S4 in Figure 9). The control unit CON of the semiconductor manufacturing apparatus 100 controls the rotational movement of the stage T, as well as the displacement and grinding operation of the grinding blade B, while the semiconductor substrate W and the support substrate G are bonded together by the adhesive layer Q.

[0045] In this embodiment, for example, as shown in Figure 7, with the semiconductor substrate W and the support substrate G bonded together by an adhesive layer Q, the support substrate G is fixed to a stage T and rotated while the grinding blade B is displaced from the second surface W2 side to the first surface W1 side of the semiconductor substrate W. This movement of the stage T and the grinding blade B grinds at least the bevel portion WB and the portion of the adhesive layer Q formed on the bevel portion WB (step S5 in Figure 9).

[0046] In particular, with the semiconductor substrate W and the support substrate G bonded together by an adhesive layer Q, at least the bevel portion WB and the portion of the adhesive layer Q formed on the bevel portion WB are ground with a grinding blade B, thereby removing them from the semiconductor substrate W in a single grinding operation of the grinding blade B, i.e., simultaneously.

[0047] As shown in Figure 3, the second value d2 of the average diameter of the support substrate G is set to be smaller than the third value d3 of the average diameter of the region including the non-pattern formation region NA (excluding the bevel portion WB) and the pattern region PA of the semiconductor substrate W. As a result, as shown in Figure 7, when the grinding blade B is displaced in the Z direction from the second surface W2 side to the first surface W1 side of the semiconductor substrate W, it is possible to suppress contact between the grinding blade B and the support substrate G. In other words, it is possible to easily control the grinding blade B. Furthermore, because the support substrate G is not ground by the grinding blade B, it is possible to reuse the support substrate G that has been peeled off from the semiconductor substrate W. In addition, because the support substrate G is not ground by the grinding blade B, it is possible to reduce the risk of cutting debris adhering to the stage T.

[0048] In this way, for example as shown in Figure 8, at least the bevel portion WB and the portion of the adhesive layer Q formed on the bevel portion WB are removed from the semiconductor substrate W by grinding with a grinding blade (step S6 in Figure 9).

[0049] Therefore, for example, by removing the adhesive layer Q located parallel to the second surface W2 of the semiconductor substrate W, which will be the processing surface in the back grinding process described later, the grinding wheel used for back grinding will no longer come into contact with the adhesive layer Q. As a result, the adhesive layer Q will be less likely to peel off during the back grinding process.

[0050] Then, in the subsequent backside grinding process, the semiconductor substrate W of the bonded structure WG is thinned by grinding the second surface W2 with a grinding wheel (step S7 in Figure 9). The thinned semiconductor substrate W, while still bonded to the support substrate G, undergoes necessary processing, such as removing the damaged layer (crushed layer) caused by wheel grinding (machining) on ​​the ground second surface W2 by wet etching (chemical reaction treatment), and then depositing a metal layer that will become the backside electrode by sputtering or other methods. After that, it is peeled off the support substrate G and formed into a chip through a dicing process (step S8 in Figure 9).

[0051] As described above, in the semiconductor device manufacturing method, the peeling of the adhesive attached to the bevel portion of the peripheral edge of the semiconductor substrate can be suppressed, for example, when grinding the back surface of the semiconductor substrate during the thinning process. By suppressing the peeling of the adhesive layer in this way, the residue of adhesive inside the semiconductor manufacturing equipment is suppressed, and the accumulation of adhesive on the filter of the circulation system is also suppressed. Furthermore, by lining the glass, blade control can be made easier, and the risk of glass breakage can be reduced.

[0052] In other words, according to the semiconductor device manufacturing method of this embodiment, it is possible to suppress the peeling of the peripheral portion of the adhesive used to bond the semiconductor substrate and the support substrate during the semiconductor device manufacturing process.

[0053] In the embodiments described above, an example of a manufacturing process was explained in which a grinding blade is used to remove the area near the bevel portion along with a portion of the adhesive layer in order to suppress the peeling of the adhesive layer. However, the method of removing the area near the bevel portion along with a portion of the adhesive layer using a grinding blade in order to suppress the peeling of the adhesive layer is not limited to the method described in the embodiments. The following first to third modifications describe other examples of a method for removing the area near the bevel along with a portion of the adhesive layer using a grinding blade in order to suppress the peeling of the adhesive layer.

[0054] [First variation] Here, Figure 10 is a cross-sectional view showing an example of a step in trimming a region including the bevel portion of a semiconductor wafer in a semiconductor manufacturing method according to the first modified example. The configuration of the semiconductor manufacturing apparatus according to this first modified example is the same as that of the semiconductor manufacturing apparatus 100 shown in Figure 1 of the previously described embodiment.

[0055] First, as in the embodiments described above, the semiconductor substrate W and the support substrate G are prepared by performing the processes shown in Figures 3 to 4, for example.

[0056] Then, similar to the embodiments described above, an adhesive layer Q is continuously formed on the first surface W1 and the bevel portion WB of the semiconductor substrate W. Then, as shown in Figure 5, the semiconductor substrate W, on which the adhesive layer Q is continuously formed on the first surface W1 and the bevel portion WB, and the support substrate G, on which the release layer H is formed, are bonded together such that the first surface W1 of the semiconductor substrate W and the third surface G1 of the support substrate G are bonded together via the adhesive layer Q.

[0057] Next, in this first modified example, as shown in Figure 10, for example, the second surface W2 of the semiconductor substrate W of the bonded structure WG is fixed to the stage T of the semiconductor manufacturing apparatus 100. The control unit CON of the semiconductor manufacturing apparatus 100 controls the rotational movement of the stage T, as well as the displacement and grinding operation of the grinding blade B, while the semiconductor substrate W and the support substrate G are bonded together by the adhesive layer Q.

[0058] In this first modified example, as shown in Figure 10, with the semiconductor substrate W and the support substrate G bonded together by an adhesive layer Q, the semiconductor substrate W is fixed to the stage T and rotated while the grinding blade B is displaced in the Z direction from the first surface W1 to the second surface W2 of the semiconductor substrate W. This grinds at least the bevel portion WB and the portion of the adhesive layer Q formed on the bevel portion WB with the grinding blade.

[0059] In this first modified example, as shown in Figure 3 described above, the second value d2 of the average diameter of the support substrate G is set to be smaller than the third value d3 of the average diameter of the region including the non-pattern formation region NA and the pattern region PA of the semiconductor substrate W, excluding the bevel portion WB. As a result, as shown in Figure 10, when the grinding blade B is displaced in the Z direction from the first surface W1 side to the second surface W2 side of the semiconductor substrate W, it is possible to suppress contact between the grinding blade B and the support substrate G. In other words, it is possible to easily control the grinding blade B.

[0060] In this way, as shown in Figure 8, similar to the embodiments described above, at least the bevel portion WB and the portion of the adhesive layer Q formed on the bevel portion WB are removed from the semiconductor substrate W by grinding with the grinding blade.

[0061] Therefore, in the edge region U near the non-pattern formation region NA of the semiconductor substrate W, the adhesive layer Q has a certain thickness at the edge compared to the thickness of the adhesive layer Q attached to the bevel portion WB, making it less likely to peel off.

[0062] In other words, according to the semiconductor device manufacturing method of this first modified example, peeling of the peripheral portion of the adhesive used to bond the semiconductor substrate and the support substrate during the semiconductor device manufacturing process can be suppressed, similar to the embodiments described above.

[0063] [Second variation] Figure 11 is a cross-sectional view showing an example of a step in trimming a region including the bevel portion of a semiconductor wafer in a semiconductor manufacturing method according to the second modified example. The configuration of the semiconductor manufacturing apparatus 200 according to this second modified example is the same as that of the semiconductor manufacturing apparatus 100 shown in Figure 1 of the previously described embodiment.

[0064] First, as in the embodiments described above, the semiconductor substrate W and the support substrate G are prepared by performing the processes shown in Figures 3 to 4, for example.

[0065] Then, similar to the embodiments described above, an adhesive layer Q is continuously formed on the first surface W1 and the bevel portion WB of the semiconductor substrate W. Then, as shown in Figure 5, the semiconductor substrate W, on which the adhesive layer Q is continuously formed on the first surface W1 and the bevel portion WB, and the support substrate G, on which the release layer H is formed, are bonded together such that the first surface W1 of the semiconductor substrate W and the third surface G1 of the support substrate G are bonded together via the adhesive layer Q.

[0066] Next, in this second modified example, as shown in Figure 11, for example, the fourth surface G2 of the support substrate G of the bonded structure WG is fixed to the stage T of the semiconductor manufacturing apparatus 200. The control unit CON of the semiconductor manufacturing apparatus 200 controls the rotational movement of the stage T, as well as the displacement and grinding operation of the grinding blade B, while the semiconductor substrate W and the support substrate G are bonded together by the adhesive layer Q.

[0067] In this second modified example, as shown in Figure 11, with the semiconductor substrate W and the support substrate G bonded together by an adhesive layer Q, the support substrate G is fixed to a stage T and rotated while the grinding blade B is displaced in the X direction from the bevel portion WB side of the semiconductor substrate W toward the center of the semiconductor substrate W. As a result, at least the bevel portion WB and the portion of the adhesive layer Q formed on the bevel portion WB are ground by the grinding blade B.

[0068] In this second modified example, as shown in Figure 3 described above, the second value d2 of the average diameter of the support substrate G is set to be smaller than the third value d3 of the average diameter of the region including the non-pattern formation region NA and the pattern region PA of the semiconductor substrate W, excluding the bevel portion WB. As a result, as shown in Figure 11, when the grinding blade B is displaced in the X direction from the bevel portion WB side of the semiconductor substrate W toward the center of the semiconductor substrate W, it is possible to suppress contact between the grinding blade B and the support substrate G. In other words, it is possible to easily control the grinding blade B.

[0069] In this way, as shown in Figure 8, similar to the embodiments described above, at least the bevel portion WB and the portion of the adhesive layer Q formed on the bevel portion WB are removed from the semiconductor substrate W by grinding with the grinding blade.

[0070] Therefore, in the edge region U near the non-pattern formation region NA of the semiconductor substrate W, the adhesive layer Q has a certain thickness at the edge compared to the thickness of the adhesive layer Q attached to the bevel portion WB, making it less likely to peel off.

[0071] In other words, according to the semiconductor device manufacturing method of this second modified example, it is possible to suppress the peeling of the peripheral portion of the adhesive used to bond the semiconductor substrate and the support substrate during the semiconductor device manufacturing process.

[0072] [Third variation] Figure 12 is a cross-sectional view showing an example of a step in trimming a region including the bevel portion of a semiconductor wafer in a semiconductor device manufacturing method according to the third modified example. The configuration of the semiconductor manufacturing apparatus 300 according to this third modified example is the same as that of the semiconductor manufacturing apparatus 100 shown in Figure 1 of the previously described embodiment.

[0073] First, as in the embodiments described above, the semiconductor substrate W and the support substrate G are prepared by performing the processes shown in Figures 3 to 4, for example.

[0074] Then, similar to the embodiments described above, an adhesive layer Q is continuously formed on the first surface W1 and the bevel portion WB of the semiconductor substrate W. Then, as shown in Figure 5, the semiconductor substrate W, on which the adhesive layer Q is continuously formed on the first surface W1 and the bevel portion WB, and the support substrate G, on which the release layer H is formed, are bonded together such that the first surface W1 of the semiconductor substrate W and the third surface G1 of the support substrate G are bonded together via the adhesive layer Q.

[0075] Next, in this third modified example, as shown in Figure 12, for example, the second surface W2 of the semiconductor substrate W of the bonded structure WG is fixed to the stage T of the semiconductor manufacturing apparatus 100. The control unit CON of the semiconductor manufacturing apparatus 100 controls the rotational movement of the stage T, as well as the displacement and grinding operation of the grinding blade B, while the semiconductor substrate W and the support substrate G are bonded together by the adhesive layer Q.

[0076] In this third modified example, as shown in Figure 12, with the semiconductor substrate W and the support substrate G bonded together by an adhesive layer Q, the semiconductor substrate W is fixed to the stage T and rotated while the grinding blade B is displaced in the X direction from the bevel portion WB side of the semiconductor substrate W toward the center of the semiconductor substrate W. As a result, at least the bevel portion WB and the portion of the adhesive layer Q formed on the bevel portion WB are ground by the grinding blade B.

[0077] In this third modified example, as shown in Figure 3 described above, the second value d2 of the average diameter of the support substrate G is set to be smaller than the third value d3 of the average diameter of the region including the non-pattern formation region NA and the pattern region PA of the semiconductor substrate W, excluding the bevel portion WB. As a result, as shown in Figure 12, when the grinding blade B is displaced in the X direction from the bevel portion WB side of the semiconductor substrate W toward the center of the semiconductor substrate W, it is possible to suppress contact between the grinding blade B and the support substrate G. In other words, it is possible to easily control the grinding blade B.

[0078] In this way, as shown in Figure 8, similar to the embodiments described above, at least the bevel portion WB and the portion of the adhesive layer Q formed on the bevel portion WB are removed from the semiconductor substrate W by grinding with the grinding blade.

[0079] Therefore, in the edge region U near the non-pattern formation region NA of the semiconductor substrate W, the adhesive layer Q has a certain thickness at the edge compared to the thickness of the adhesive layer Q attached to the bevel portion WB, making it less likely to peel off.

[0080] As described above, the semiconductor device manufacturing method according to this third modified example makes it possible to suppress the peeling of the peripheral portion of the adhesive used to bond the semiconductor substrate and the support substrate during the semiconductor device manufacturing process.

[0081] While several embodiments of the present invention have been described, these embodiments are presented as examples only and are not intended to limit the scope of the invention. These novel embodiments can be carried out in a variety of other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope and spirit of the invention, as well as in the claims of the invention and its equivalents. [Explanation of Symbols]

[0082] 100 Semiconductor manufacturing equipment T Stage B Grinding blade CON Control Unit WG laminated structure W Semiconductor substrate G Support board Q Adhesive layer

Claims

1. A method for manufacturing a semiconductor device, A semiconductor substrate having a first surface including a pattern region on which a device pattern is provided, a second surface opposite to the first surface, and bevel portions located at the periphery of the first and second surfaces, with an adhesive layer continuously formed on the first surface and the bevel portion, and a support substrate having a third surface including a release layer region on which a release layer is formed, are bonded together such that the first surface and the third surface are bonded via the adhesive layer. With the semiconductor substrate and the support substrate bonded together by the adhesive layer, at least the bevel portion and the portion of the adhesive layer formed on the bevel portion are removed from the semiconductor substrate. A method for manufacturing a semiconductor device, characterized by the following:

2. The semiconductor substrate and the support substrate are bonded together such that a perpendicular line passing through the center of the first surface of the semiconductor substrate passes through the center of the third surface of the support substrate. A method for manufacturing a semiconductor device according to claim 1, characterized in that it is a semiconductor device.

3. The semiconductor substrate has an average diameter in a direction parallel to the first surface of the semiconductor substrate that is a first value. The support substrate has an average diameter in the direction parallel to the third surface of the support substrate that is the second value. The first value is greater than the second value. The second value is longer than the distance of the pattern region in the direction parallel to the first surface. A method for manufacturing a semiconductor device according to claim 2, characterized in that it is a semiconductor device.

4. The semiconductor substrate has a third average diameter in a direction parallel to the first surface of the semiconductor substrate, excluding the bevel portion. The second value is smaller than the third value. The method for manufacturing a semiconductor device according to claim 3, characterized in that it is a semiconductor device.

5. At least the bevel portion and the portion of the adhesive layer formed on the bevel portion are removed from the semiconductor substrate by grinding them with a grinding blade. A method for manufacturing a semiconductor device according to claim 1, characterized in that it is a semiconductor device.

6. When removing the bevel portion and the portion of the adhesive layer formed on the bevel portion from the semiconductor substrate, the semiconductor substrate and the support substrate are bonded together by the adhesive layer. At least the bevel portion and the portion of the adhesive layer formed on the bevel portion are removed from the semiconductor substrate by grinding the grinding blade with the grinding blade so as to displace the grinding blade from the second surface side to the first surface side of the semiconductor substrate, or At least the bevel portion and the portion of the adhesive layer formed on the bevel portion are removed from the semiconductor substrate by grinding the grinding blade with the grinding blade so as to displace the grinding blade from the first surface side to the second surface side of the semiconductor substrate, or At least the bevel portion and the portion of the adhesive layer formed on the bevel portion are removed from the semiconductor substrate by grinding the grinding blade with the grinding blade while displacing the grinding blade from the bevel portion side of the semiconductor substrate toward the center of the semiconductor substrate. The method for manufacturing a semiconductor device according to claim 5, characterized in that it is a semiconductor device.

7. With the semiconductor substrate and the support substrate bonded together by the adhesive layer, at least the bevel portion and the portion of the adhesive layer formed on the bevel portion are simultaneously removed from the semiconductor substrate by grinding with the grinding blade. The method for manufacturing a semiconductor device according to claim 5, characterized in that it is a semiconductor device.

8. A semiconductor manufacturing apparatus for manufacturing semiconductor devices, A stage for fixing and rotating a bonded structure in which a semiconductor substrate and a support substrate are bonded together, A grinding blade for grinding the end of the bonded structure, The system includes a control unit that controls the rotational movement of the stage and controls the displacement and grinding operation of the grinding blade, The control unit, A semiconductor substrate having a first surface including a pattern region on which a device pattern is provided, a second surface opposite to the first surface, and bevel portions located at the periphery of the first and second surfaces, with an adhesive layer continuously formed on the first surface and the bevel portion; and a support substrate having a third surface including a release layer region on which a release layer is formed, are bonded together by the adhesive layer such that the first surface and the third surface are bonded via the adhesive layer. The rotational movement of the stage is controlled, and the displacement and grinding operation of the grinding blade are controlled to remove at least the bevel portion and the portion of the adhesive layer formed on the bevel portion from the semiconductor substrate by grinding them with the grinding blade. A semiconductor manufacturing apparatus characterized by the following features.

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