Sensor device and method for manufacturing a sensor device

Abstract

To provide a sensor device with high measurement accuracy. [Solution] The system comprises a first wiring, a second wiring, a first impedance element connected to both the first wiring and one of the second wiring, a second impedance element each connected to both the first wiring and one of the second wiring, a first conversion circuit 201 that converts a first current flowing through the second wiring to which the first impedance element is connected into a first voltage, a second conversion circuit 202 that converts a second current flowing through the second wiring to which the second impedance element is connected into a second voltage, at least one of a first amplification circuit 301 that outputs a first amplified voltage obtained by amplifying the first voltage with a first gain, and a second amplification circuit 302 that outputs a second amplified voltage obtained by amplifying the second voltage with a second gain, and a subtraction circuit 400 that outputs at least one of the difference between the first amplified voltage and the second amplified voltage, the difference between the first amplified voltage and the second voltage, and the difference between the first voltage and the second amplified voltage.

Description

Technical Field

[0001] The present disclosure relates to a sensor device including a plurality of impedance elements and a method for manufacturing the same.

Background Art

[0002] Conventionally, a resistor array circuit having a plurality of resistor elements arranged in a matrix has been disclosed. Such a resistor array circuit is used, for example, as an infrared detection circuit (see, for example, Patent Document 1). In such an infrared detection circuit, a plurality of infrared-sensitive resistors such as thermistors whose resistance values change according to temperature changes are arranged.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] By the way, in a sensor device including a plurality of sensor elements, it is desired to have high measurement accuracy for a physical quantity to be measured.

Means for Solving the Problems

[0005] A sensor device according to an embodiment of the present disclosure includes one or more first wirings, a plurality of second wirings each extending in a direction different from the one or more first wirings, one or more first impedance elements each connected to both one of the one or more first wirings and one of the plurality of second wirings, one or more second impedance elements each connected to both one of the one or more first wirings and one of the plurality of second wirings, One or more first conversion circuits, each of which converts a first current flowing through a corresponding one of the plurality of second wirings to which each of the one or more first impedance elements is connected into a first voltage, A second conversion circuit that converts a second current flowing through one of the plurality of second wirings to which each of the one or more second impedance elements is connected into a second voltage, At least one of the following: one or more first amplification circuits, each outputting a first amplified voltage obtained by amplifying the first voltage corresponding to each of the one or more first impedance elements with a first gain corresponding to each of the one or more first impedance elements; and a second amplification circuit, each outputting a second amplified voltage obtained by amplifying the second voltage corresponding to each of the one or more second impedance elements with a second gain corresponding to each of the one or more second impedance elements; A subtraction circuit that outputs at least one of the following: the difference between the first amplification voltage and the second amplification voltage, the difference between the first amplification voltage and the second voltage, and the difference between the first voltage and the second amplification voltage. It is equipped with.

[0006] A method for manufacturing a first sensor device according to one embodiment of the present disclosure is: One or more first wires, a plurality of second wires each extending in a direction different from the one or more first wires, one or more first impedance elements each connected to one of the one or more first wires and one of the plurality of second wires, and the one or more first wirings A structure is provided which includes one or more second impedance elements, each connected to both one of the lines and one of the plurality of second wirings, With a surface that can be considered to have a uniform temperature facing the one or more first impedance elements, the first voltage corresponding to each of the one or more first impedance elements is measured at a predetermined ambient temperature, obtained by converting the first current flowing through one of the plurality of second wirings to which each of the one or more first impedance elements is connected. The second voltage corresponding to each of the one or more second impedance elements is measured at the predetermined ambient temperature, obtained by converting the second current flowing through one of the plurality of second wirings to which each of the one or more second impedance elements is connected. Determine the first gain corresponding to each of the one or more first impedance elements connected to one of the one or more first wirings and the second gain corresponding to each of the one or more first impedance elements connected to one of the one or more first wirings, or determine the first gain corresponding to each of the one or more first impedance elements connected to one of the one or more first wirings, such that the difference between the first amplified voltage obtained by amplifying the first voltage corresponding to one of the one or more second impedance elements connected to one of the one or more second impedance elements by amplifying the second voltage obtained by amplifying the second voltage corresponding to one of the one or more second impedance elements connected to one of the one or more first impedance elements by the second gain corresponding to one of the second impedance elements is within a predetermined range that does not depend on any of the one or more first impedance elements and any of the one or more second impedance elements. Includes.

[0007] A method for manufacturing a second sensor device according to one embodiment of the present disclosure is: A structure is provided comprising one or more first wires, a plurality of second wires each extending in a direction different from the one or more first wires, one or more first impedance elements each connected to one of the one or more first wires and one of the plurality of second wires, and one or more second impedance elements each connected to one of the one or more first wires and one of the plurality of second wires. With a surface that can be considered to have a uniform temperature facing the one or more first impedance elements, the first voltage corresponding to each of the one or more first impedance elements is measured at a predetermined ambient temperature, obtained by converting the first current flowing through one of the plurality of second wirings to which each of the one or more first impedance elements is connected. The second voltage corresponding to each of the one or more second impedance elements is measured at the predetermined ambient temperature, obtained by converting the second current flowing through one of the plurality of second wirings to which each of the one or more second impedance elements is connected. The second gain corresponding to the one second impedance element connected to the one first wiring is determined such that the difference between the first voltage corresponding to the first impedance element connected to one of the one or more first wirings, and the second amplified voltage obtained by amplifying the second voltage corresponding to the one second impedance element connected to one of the one or more second impedance elements with a second gain corresponding to the one second impedance element, is within a predetermined range that does not depend on any of the one or more first impedance elements or any of the one or more second impedance elements. Includes.

[0008] A method for manufacturing a third sensor device according to one embodiment of the present disclosure is: One or more first wirings, and a plurality of first wirings each extending in a direction different from that of the one or more first wirings. A structure comprising two wirings, one or more first impedance elements each connected to one of the one or more first wirings and one of the plurality of second wirings, and one or more second impedance elements each connected to one of the one or more first wirings and one of the plurality of second wirings, With a surface that can be considered to have a uniform temperature facing the one or more first impedance elements, the first voltage corresponding to each of the one or more first impedance elements is measured at a predetermined ambient temperature, obtained by converting the first current flowing through one of the plurality of second wirings to which each of the one or more first impedance elements is connected. The second voltage corresponding to each of the one or more second impedance elements is measured at the predetermined ambient temperature, obtained by converting the second current flowing through one of the plurality of second wirings to which each of the one or more second impedance elements is connected. The second gain corresponding to the one second impedance element connected to the one first wiring is determined such that the difference between the first voltage corresponding to one first impedance element connected to one of the one or more first wirings and one second wiring among the plurality of second wirings, and the second amplified voltage obtained by amplifying the second voltage corresponding to one second impedance element connected to one of the one or more second impedance elements by the second gain corresponding to the one second impedance element, is within a predetermined range that does not depend on any of the one or more first impedance elements or any of the one or more second impedance elements. The first gain corresponding to each of the one or more first impedance elements connected to the other second wiring is determined such that the difference between the first amplified voltage, obtained by amplifying the first voltage corresponding to each of the one or more first impedance elements connected to the one first wiring and the other second wirings of the plurality of second wirings (excluding the one second wiring), by the first gain corresponding to each of the one or more first impedance elements, and the second amplified voltage based on the second voltage corresponding to the one second impedance element connected to the one first wiring, is within a predetermined range that does not depend on any of the one or more first impedance elements or any of the one or more second impedance elements. Includes.

[0009] In the sensor device according to an embodiment of the present disclosure, the variation in the characteristic values of the first impedance element and the second impedance element due to manufacturing errors and the like can be corrected by using the first voltage corresponding to the first impedance element and the second voltage corresponding to the second impedance element. According to the manufacturing method of the first to third sensor devices according to an embodiment of the present disclosure, the above-described sensor device can be manufactured.

Advantages of the Invention

[0010] According to the sensor device according to an embodiment of the present disclosure, high measurement accuracy can be achieved for the physical quantity to be measured. Further, according to the manufacturing method of the first to third sensor devices according to an embodiment of the present disclosure, the above-described sensor device can be manufactured.

Brief Description of the Drawings

[0011] [Figure 1] FIG. 1 is a functional block diagram showing an overall configuration example of a sensor device according to a first embodiment of the present disclosure. [Figure 2] FIG. 2 is a circuit diagram showing the circuit configuration of a detection unit and a conversion unit in the sensor device shown in FIG. 1. [Figure 3] FIG. 3 is a circuit diagram showing the circuit configuration of a conversion unit, an amplification unit, and a subtraction circuit in the sensor device shown in FIG. 1. [Figure 4] FIG. 4 is a circuit diagram showing the circuit configuration of a conversion unit, an amplification unit, and a subtraction circuit in a sensor device as a first modification of the present disclosure. [Figure 5] FIG. 5 is a circuit diagram showing the circuit configuration of a conversion unit, an amplification unit, and a subtraction circuit in a sensor device as a second modification of the present disclosure. [Figure 6] FIG. 6 is a circuit diagram showing the circuit configuration of a detection unit and a conversion unit in a sensor device as a third modification of the present disclosure.

Embodiments for Carrying Out the Invention

[0012] Embodiments of the present invention will be described in detail below with reference to the drawings. The description will be in the following order. 1. Embodiment (Example of a sensor device comprising both a first amplification circuit and a second amplification circuit) 2. Variations

[0013] <1. Embodiment> [Example of overall sensor device configuration] Figure 1 is a functional block diagram showing an example of the overall configuration of a sensor device 1 according to the first embodiment of the present disclosure. The sensor device 1 comprises a detection unit 100, a conversion unit 200, an amplification unit 300, a subtraction circuit 400 as an arithmetic unit, and a control unit 500. As shown in Figure 1, the detection unit 100 has a first detection circuit 101 and a second detection circuit 102. The conversion unit 200 also has a first conversion circuit 201 and a second conversion circuit 202. The amplification unit 300 also has a first amplification circuit 301 and a second amplification circuit 302.

[0014] [Detailed configuration example of the sensor device] Figure 2 is a circuit diagram showing detailed circuit configuration examples of the detection unit 100 and the conversion unit 200 of the sensor device 1 shown in Figure 1. The detection unit 100 is mounted on an electromagnetic wave sensor (such as an infrared thermograph) that detects electromagnetic waves such as infrared rays, and is configured to output a current corresponding to the intensity of the electromagnetic waves such as infrared rays irradiated onto the detection unit 100. The measurement operation in the detection unit 100 is executed by commands from the control unit 500. Figure 2 also shows the control unit 500.

[0015] (Detection unit 100) As shown in Figure 2, the detection unit 100 includes, for example, multiple power supply lines Ai (denoted as A1 to Am in Figure 2), multiple readout lines B (denoted as B1 to Bn in Figure 2), multiple resistor elements Za (denoted as Za(1,2) to Za(m,n) in Figure 2), multiple resistor elements Zb (denoted as Zb(1,1) to Zb(m,1) in Figure 2), and a power supply line selection unit SA. The conversion unit 200 includes multiple operational amplifiers OPj (denoted as OP1 to OPn in Figure 2) and multiple resistor elements REj (denoted as RE1 to REn in Figure 2). The conversion unit 200 will be described in detail later. Of the detection unit 100, the first detection circuit 101 is provided with multiple resistor elements Za, and the second detection circuit 102 is provided with multiple resistor elements Zb. The second detection circuit 102 is further provided with an electromagnetic wave shield 41 so as to cover the multiple resistor elements Zb. Therefore, in the sensor device 1, the resistive element Zb can be used as a reference element to correct measurement errors that depend on the ambient temperature on which the sensor device 1 is mounted. Note that Figure 2 illustrates a configuration with m power supply lines A, but the number of power supply lines A (m) can be arbitrarily selected from an integer of 2 or more. Similarly, Figure 2 illustrates a configuration with n readout lines B, but the number of readout lines B (n) can be arbitrarily selected from an integer of 2 or more. Furthermore, the multiple power supply lines A and the multiple readout lines B are not in direct contact.

[0016] In Figure 2, the resistive element Za connected to both the i-th feed line Ai (where i is a natural number less than or equal to m) out of m feed lines A1 to Am, and the j-th readout line Bj (where j is a natural number between 1 and n) out of n readout lines B1 to Bn, is denoted as Za(i,j). However, in the example in Figure 2, the resistive element Za is connected to the 2nd to nth readout line B2 out of B1 to Bn. ~Bn is connected. Also, in Figure 2, the resistive element Zb connected to both the i-th feed line Ai (where i is a natural number less than or equal to m) out of m feed lines A1 to Am, and the j-th read line Bj (where j is a natural number between 1 and n) out of n read lines B1 to Bn is denoted as Zb(i,j). However, in the example in Figure 2, the resistive element Zb is connected only to the first read line B1 out of read lines B1 to Bn. The same notation will be used in Figure 3 and subsequent drawings. The resistive element Za is an active element to which electromagnetic waves such as infrared rays from the object being measured are irradiated, and is a specific example corresponding to one aspect of the "first impedance element" in this disclosure. On the other hand, the resistive element Zb is a blind element protected from irradiation of electromagnetic waves from the object being measured by the electromagnetic wave shield 41, and is a specific example corresponding to one aspect of the "second impedance element" in this disclosure. In this specification, the resistive elements Za and Zb may be collectively referred to as the resistive element Z.

[0017] In Figure 2, the connection point P between the i-th feed line Ai (out of m feed lines A1 to Am) and the resistor Z(i,j) is denoted as P(i,j). In Figure 2, the connection point K between the j-th read line Bj (out of n read lines B1 to Bn) and the resistor Z(i,j) is denoted as K(i,j).

[0018] (Feed line A) Power supply line A is a specific example corresponding to one aspect of the "first wiring" of this disclosure. Each of the multiple power supply lines A (A1 to Am in Figure 2) is a conductor extending in a first direction (X-axis direction) from connection point P(i,1) to connection point P(i,n). The multiple power supply lines A are arranged adjacent to each other in a second direction (Y-axis direction) different from the first direction. In the example in Figure 2, each of the m power supply lines A extends in the X-axis direction, and the m power supply lines A are arranged adjacent to each other in the Y-axis direction which is perpendicular to the X-axis direction. Power supply line A1 extends from connection point P(1,1) to connection point P(1,n). Power supply line A2 extends from connection point P(2,1) to connection point P(2,n). Power supply line Am extends from connection point P(m,1) to connection point P(m,n).

[0019] As shown in Figure 2, the first end of each of the multiple power supply lines A (A1 to Am) is connected to the DC power supply PS1 via connecting wires WA (denoted as WA1 to WAm in Figure 2). Connecting wire WA1 extends from the DC power supply PS1 to connection point P(1,1), connecting wire WA2 extends from the DC power supply PS1 to connection point P(2,1), and connecting wire WAm extends from the DC power supply PS1 to connection point P(m,1). That is, connecting wire WAi extends from the DC power supply PS1 to connection point P(i,1). In addition, each of the multiple connecting wires WA (WA1 to WAm) is connected to a connecting wire WB (denoted as WB1 to WBm in Figure 2). Specifically, the second end of connecting wire WB1 is connected to connecting wire WA1 at connection point J1, the second end of connecting wire WB2 is connected to connecting wire WA2 at connection point J2, and the second end of connecting wire WBm is connected to connecting wire WAm at connection point Jm. That is, the second end of connecting wire WBi is connected to connecting wire WAi at connection point Ji. However, the second end of connecting wire WBi may also be connected to connecting wire WAi at connection point P(i,1). That is, connection point Ji and connection point P(i,1) may coincide. Furthermore, the first end of connecting wire WBi, opposite to the second end, is connected to the DC power supply PS2. As shown in Figure 1, multiple connecting wires WA(WA1~WAm) may share parts of each other, or each of the multiple connecting wires WA(WA1~WAm) may be independently and individually connected to the DC power supply PS1. The DC power supply PS1 may be located inside the detection unit 100 or outside the detection unit 100. Similarly, the DC power supply PS2 may be located inside the detection unit 100 or outside the detection unit 100.

[0020] Each of the multiple connection wires WA (WA1~WAm) has multiple switches SWA1(S Each of the multiple switches SWA1 (SWA1-1 to SWA1-m) is provided. For example, switch SWA1-1 is provided on connection wiring WA1, switch SWA1-2 is provided on connection wiring WA2, and switch SWA1-m is provided on connection wiring WAm. In addition, each of the multiple connection wirings WB (WB1 to WBm) is provided with one of the multiple switches SWA2 (SWA2-1 to SWA2-m). For example, switch SWA2-1 is provided on connection wiring WB1, switch SWA2-2 is provided on connection wiring WB2, and switch SWA2-m is provided on connection wiring WBm. When each of the multiple switches SWA1 (SWA1-1 to SWA1-m) is in a conductive state and each of the multiple switches SWA2 (SWA2-1 to SWA2-m) is in a non-conductive state, the DC power supply PS1 sets the potential of each of the multiple power supply lines A (A1 to Am) to the first potential V1. Furthermore, when each of the multiple switches SWA1 (SWA1-1 to SWA1-m) becomes non-conductive and each of the multiple switches SWA2 (SWA2-1 to SWA2-m) becomes conductive, the DC power supply PS2 sets the potential of each of the multiple power supply lines A (A1 to Am) to a second potential V2.

[0021] Furthermore, the first ends of multiple resistive elements Z are connected to each of the multiple power supply lines A. In the example in Figure 2, n resistive elements Z are connected in parallel to each of the m power supply lines A. Specifically, the first ends of resistive elements Zb(1,1), Za(1,2) to Za(1,n) are connected to power supply line A1 extending in the X-axis direction. More specifically, power supply line A1 and resistive element Zb(1,1) are connected to each other at connection point P(1,1). Power supply line A1 and resistive element Za(1,2) are connected to each other at connection point P(1,2), power supply line A1 and resistive element Za(1,3) are connected to each other at connection point P(1,3), and power supply line A1 and resistive element Za(1,n) are connected to each other at connection point P(1,n). In other words, the j-th resistor Z, counting from connection point P(1,1), is connected to the power supply line A1 at the j-th connection point P(1,j), counting from connection point P(1,1).

[0022] Similarly, the first ends of the resistive elements Zb(2,1), Za(2,2) to Za(2,n) are connected to the feed line A2 extending in the X-axis direction. More specifically, the feed line A2 and the resistive element Zb(2,1) are connected to each other at connection point P(2,1). The feed line A2 and the resistive element Za(2,2) are connected to each other at connection point P(2,2), the feed line A2 and the resistive element Za(2,3) are connected to each other at connection point P(2,3), and the feed line A2 and the resistive element Za(2,n) are connected to each other at connection point P(2,n). In other words, the j-th resistive element Z, counting from connection point P(2,1), is connected to the feed line A2 at the j-th connection point P(2,j), counting from connection point P(2,1).

[0023] Furthermore, the first ends of each of the resistive elements Zb(m,1), Za(m,2) to Za(m,n) are connected to the feed line Am extending in the X-axis direction. Specifically, the feed line Am and resistive element Zb(m,1) are connected to each other at connection point P(m,1). The feed line Am and resistive element Za(m,2) are connected to each other at connection point P(m,2), the feed line Am and resistive element Za(m,3) are connected to each other at connection point P(m,3), and the feed line Am and resistive element Za(m,n) are connected to each other at connection point P(m,n). In other words, the j-th resistive element Z, counting from connection point P(m,1), is connected to the feed line Am at the j-th connection point P(m,j), counting from connection point P(m,1).

[0024] In this way, the first ends of each of the resistive elements Z(i,1) to Z(i,n) are connected to the feed line Ai extending in the X-axis direction. In the example in Figure 2, each of the connection points P(1,n) to P(m,n), which are the second ends opposite to the first ends of the m feed lines A, is connected to one corresponding first end of the resistive elements Z(1,n) to Z(m,n) that are aligned in the Y-axis direction.

[0025] (Power supply line selection section SA) The power supply line selection unit SA has a plurality of switches SWA1 (SWA1-1 to SWA1-m) and a plurality of switches SWA2 (SWA2-1 to SWA2-m). Each of the plurality of switches SWA1 (SWA1-1 to SWA1-m) and the plurality of switches SWA2 (SWA2-1 to SWA2-m) is capable of switching between a conductive state and a non-conductive state. Each of the plurality of switches SWA1 (SWA1-1 to SWA1-m) is provided on the corresponding connection wiring WA. Each of the plurality of switches SWA2 (SWA2-1 to SWA2-m) is provided on the corresponding connection wiring WB (WB1 to WBm).

[0026] The power line selection unit SA selects one power line A from among multiple power lines A (for convenience, referred to as the selected power line AS), connects that selected power line AS to the DC power supply PS1, and connects all other power lines A from among the multiple power lines A (for convenience, referred to as the non-selective power lines AU) to the DC power supply PS2. A voltage is applied to the selected power line AS by the DC power supply PS1 so that the potential of the selected power line AS becomes the first potential V1. A voltage is applied to the non-selective power lines AU by the DC power supply PS2 so that the potential of the non-selective power lines AU becomes the second potential V2. The second potential V2 is different from the first potential V1. The potential of the selected power line AS is different from the potential of the non-selective power lines AU (the second potential V2). The operation of the power line selection unit SA is controlled by the control unit 500. In other words, the switching operations of the multiple switches SWA1 (SWA1-1 to SWA1-m) and the multiple switches SWA2 (SWA2-1 to SWA2-m) in the power supply line selection unit SA are performed based on commands from the control unit 500.

[0027] (Control unit 500) The control unit 500, for example, has a microcomputer, and the CPU (Central Processing Unit) executes a control program to perform predetermined control processing. The control unit 500 controls, for example, the switching operation of multiple switches SW to the detection unit 100.

[0028] Specifically, the control unit 500 controls the switching operation of the power supply line selection unit SA. That is, the control unit 500 sets one switch SWA1 corresponding to the selected power supply line AS to a conductive state, and the other switch SWA1 corresponding to the non-selected power supply line AU to a non-conductive state. At the same time, the control unit 500 sets one switch SWA2 corresponding to the selected power supply line AS to a non-conductive state, and the other switch SWA2 corresponding to the non-selected power supply line AU to a conductive state.

[0029] Furthermore, when a selected power supply line AS is selected by the power supply line selection unit SA based on a command from the control unit 500, a current corresponding to the resistance value of the resistor element Z (a resistor element selected from multiple resistor elements Z, conveniently referred to as the selected resistor element ZS) connected to both the selected selected power supply line AS and the respective read line B flows through the read line B, and is converted into a voltage (output voltage from the output terminal T3 of the operational amplifier OP) by the conversion circuit of the conversion unit 200.

[0030] (Readout line B) Read line B is a specific example corresponding to one aspect of the “second wiring” of this disclosure. Each of the multiple readout lines B (B1 to Bn in Figure 1) is a wire extending from connection point K(1,j) to operational amplifier OPj. Each of the multiple readout lines B extends in a second direction different from the first direction. The multiple readout lines B are arranged adjacent to each other in the first direction different from the second direction. In the example in Figure 1, each of the n readout lines B extends in the Y-axis direction, and the n readout lines B are arranged adjacent to each other in the X-axis direction. Readout line B1 is a wire extending from connection point K(1,1) to operational amplifier OP1. Readout line B2 is a wire extending from connection point K(1,2) to operational amplifier OP2. Readout line B3 is a wire extending from connection point K(1,3) to operational amplifier OP3. Readout line Bn is a wire extending from connection point K(1,n) to operational amplifier OPn. In other words, the readout line Bj is a wire that extends from the connection point K(1,j) to the operational amplifier OPj.

[0031] The first end of read line B is connected to the second end of resistor element Z(1,j). The second end of resistor element Z(1,j) is the end opposite to the first end connected to feed line A1. In the example in Figure 2, m resistor elements Z are connected to one read line B. Specifically, the second end of resistor element Zb(1,1) is connected to the first end of read line B1, which extends in the Y-axis direction. Read line B1 and resistor element Zb(1,1) are connected to each other at connection point K(1,1). Further, resistor element Zb(2,1) is connected to read line B1 at connection point K(2,1), and resistor element Zb(m,1) is connected at connection point K(m,1). In addition, the second end of resistor element Za(1,2) is connected to the first end of read line B2, which extends in the Y-axis direction. Read line B2 and resistor element Za(1,2) are connected to each other at connection point K(1,2). Further, resistor element Za(2,2) is connected to read line B2 at connection point K(2,2), and resistor element Za(m,2) is connected at connection point K(m,2). Additionally, the second end of resistor element Za(1,3) is connected to the first end of read line B3, which extends in the Y-axis direction. Read line B3 and resistor element Za(1,3) are connected to each other at connection point K(1,3). Further, resistor element Za(2,3) is connected to read line B3 at connection point K(2,3), and resistor element Za(m,3) is connected at connection point K(m,3). Furthermore, the second end of resistor element Za(1,n) is connected to the first end of read line Bn, which extends in the Y-axis direction. The readout line Bn and the resistor Za(1,n) are connected to each other at connection point K(1,n). The readout line Bn is further connected to the resistor Za(2,n) at connection point K(2,n) and to the resistor Za(m,n) at connection point K(m,n).

[0032] Furthermore, the second end of each of the multiple readout lines B is connected to the corresponding operational amplifier OPj among the multiple operational amplifiers OP (OP1 to OPn in Figure 1). The second end of each of the multiple readout lines Bj is the end opposite to the first end of each readout line Bj that is connected to the corresponding resistor Z(1,j) of the multiple resistors Z(1,j). Specifically, the second end of readout line B1 is connected to the negative input terminal T2 of operational amplifier OP1, the second end of readout line B2 is connected to the negative input terminal T2 of operational amplifier OP2, the second end of readout line B3 is connected to the negative input terminal T2 of operational amplifier OP3, and the second end of readout line Bn is connected to the negative input terminal T2 of operational amplifier OPn. A current corresponding to the resistance value of the resistor Z connected to each readout line B flows through each readout line B.

[0033] (Resistor element Z) Each of the multiple resistors Z is connected to both one of the multiple power supply lines A and one of the multiple readout lines B. Each of the multiple resistors Z has a first end connected to one power supply line A and a second end connected to one readout line B. As mentioned earlier, in the example in Figure 1, n resistors Z are connected to each of the multiple power supply lines A (A1 to Am), and m resistors Z are connected to each of the multiple readout lines B (B1 to Bn). There is one resistor Z that is connected to both one power supply line Ai from the multiple power supply lines A and one readout line Bj from the multiple readout lines B. Therefore, by selecting one power supply line Ai from the multiple power supply lines A and one readout line Bj from the multiple readout lines B, one resistor Z can be identified.

[0034] Regarding the n resistors Z connected to the power supply line A1, specifically, the first end of resistor Zb(1,1) is connected to the power supply line A1 at connection point P(1,1), and the second end of resistor Zb(1,1) is connected to the first end of read line B1 at connection point K(1,1). Also, the first end of resistor Za(1,2) is connected to the power supply line A1 at connection point P(1,2), and the second end of resistor Za(1,2) is connected to the first end of read line B2 at connection point K(1,2). Furthermore, the first end of resistor Za(1,3) is connected to the power supply line A1 at connection point P(1,3), and the second end of resistor Za(1,3) is connected to the first end of read line B3 at connection point K(1,3). Furthermore, the first end of the resistive element Za(1,n) is connected to the feed line A1 at connection point P(1,n), and the second end of the resistive element Za(1,n) is connected to the first end of the read line Bn at connection point K(1,n). The same applies to the n resistive elements Z connected to each of the other feed lines Ai besides feed line A1.

[0035] The resistive element Z is part of an infrared light receiving element that converts infrared light focused by, for example, a lens into an electrical signal. Specifically, it has a resistance-changing layer that exhibits a resistance change due to temperature changes. The resistance-changing layer is, for example, a thermistor film. The thermistor film contains, for example, vanadium oxide, amorphous silicon, polycrystalline silicon, a spinel-type crystalline oxide containing manganese, titanium oxide, or yttrium-barium-copper oxide. An infrared absorption layer that absorbs infrared light and generates heat is provided adjacent to the thermistor film. The infrared absorption layer contains, for example, silicon oxide (SiO2), aluminum oxide (Al2O3), silicon nitride (Si3N4), or aluminum nitride (AlN). Depending on the intensity of the received infrared light, temperature changes occur in the infrared absorption layer and the resistance-changing layer, and as a result, the resistance value of the resistance-changing layer of the resistive element R changes.

[0036] When performing measurements on the selective resistor element ZS, a switch SWA1 corresponding to the selective power supply line AS is set to a conductive state so that a voltage is applied from the DC power supply PS1 to one of the power supply lines A (selective power supply line AS) to which the selective resistor element ZS is connected. In addition, when performing measurements on the selective resistor element ZS, a voltage is applied from the DC power supply PS2 to all power supply lines A other than the selective power supply line AS (non-selective power supply line AU) via a switch SWA2 that is set to a conductive state corresponding to the non-selective power supply line AU.

[0037] Figure 2 shows, as an example, a state in which the resistive element Z(i,j), i.e., the resistive elements Zb(1,1), Za(1,2) to Za(1,n), are selected. Therefore, Figure 2 shows a state in which, with switch SWA1-1 in the conductive state, a voltage is applied from DC power supply PS1 to feed line A1, which is the selective feed line AS corresponding to the resistive elements Z(1,1) to Z(1,n) as the selective resistive elements, and the potential of feed line A1 is the first potential V1. Furthermore, Figure 2 shows a state in which, with switches SWA2-2 to SWA2-m in the conductive state, a voltage is applied from DC power supply PS2 to all non-selective feed lines AU other than feed line A1, which are feed lines A2 to Am, and the potential of feed lines A2 to Am is the second potential V2 (≠V1). In this case, switches SWA1-2 to SWA1-m, which are provided in correspondence with power lines A2 to Am as non-selective power lines AU, are all in a non-conductive state, and switch SWA2-1, which is provided in correspondence with power line A1 as a selective power line, is also in a non-conductive state. Note that the first potential V1 and the second potential V2 only need to be different from each other. Either the first potential V1 or the second potential V2 may be 0V.

[0038] In the example shown in Figure 2, multiple resistors Zb connected to multiple power supply lines A are connected to one of the multiple readout lines B. Specifically, multiple resistors Zb(1,1) to Zb(m,1) connected to multiple power supply lines A1 to Am are all connected to readout line B1.

[0039] (Conversion unit 200) The conversion unit 200 comprises one or more first conversion circuits 201 and a second conversion circuit 202. In the example shown in Figure 2, the conversion unit 200 comprises multiple first conversion circuits 201. In the example shown in Figure 2, each of the multiple first conversion circuits 201 is provided with operational amplifiers OP2 to OPn and resistors RE2 to REn, while the second conversion circuit 202 is provided with operational amplifier OP1 and resistor RE1. Each of the multiple first conversion circuits 201 converts the first current Ia(i,j) corresponding to the resistance value of each of the multiple resistors Za(i,j) that flows through one of the multiple readout lines Bj to which each of the multiple resistors Za(i,j) is connected, into a first voltage Va(i,j). The converted first voltage Va(i,j) is output to the first amplification circuit 301. The second conversion circuit 202 converts the second current Ib(i,1) corresponding to the resistance value of each of the multiple resistor elements Zb(i,1) that flows through one of the multiple read lines Bj to which each of the multiple resistor elements Zb(i,1) is connected (read line B1 in the example of Figure 2) into a second voltage Vb(i,1). The converted second voltage Vb(i,1) is output to the second amplifier circuit 302.

[0040] (Operational amplifier OP) Each of the multiple operational amplifiers OPj (OP1 to OPn in Figure 2) is connected to a corresponding readout line Bj of the multiple readout lines B. Each of the multiple operational amplifiers OPj includes a positive input terminal T1, a negative input terminal T2, and an output terminal T3. The positive input terminal T1 of each of the multiple operational amplifiers OPj is connected to, for example, a DC power supply PS2, and the potential of each positive input terminal T1 is set to a second potential V2 that is different from the first potential V1. That is, both the non-selective power supply line AU and the positive input terminal T1 of the multiple operational amplifiers OPj are at the same potential (second potential V2). The second potential V2 is, for example, 0V. Each of the negative input terminals T2 of the multiple operational amplifiers OPj is connected to a corresponding readout line Bj. Since each operational amplifier OPj operates so that the positive input terminal T1 and the negative input terminal T2 are at the same potential, the potential of the negative input terminal T2 is approximately the second potential V2. Each output terminal T3 of multiple operational amplifiers OPj is connected to a corresponding negative input terminal T2 via a corresponding resistor REj.

[0041] (Resistor element RE) Each of the resistor elements REj (RE1 to REn in Figure 1) contains a resistor made of, for example, a metallic material having a predetermined resistivity. Each of the multiple resistor elements REj is connected to both the negative input terminal T2 and the output terminal T3 of a corresponding operational amplifier OPj. A resistor element REj (where j is 2 or greater) converts the first current Ia(i,j) flowing through the readout line Bj connected to the negative input terminal T2 into a first voltage Va(i,j). A resistor element RE1 converts the second current Ib(i,1) flowing through the readout line B1 connected to the negative input terminal T2 into a second voltage Vb(i,1). Specifically, in the example in Figure 2, resistor element RE1 is connected to both the negative input terminal T2 and the output terminal T3 of operational amplifier OP1 and converts the second current Ib(i,1) flowing through the readout line B1 into a second voltage Vb(i,1). Resistor RE2 is connected to both the negative input terminal T2 and output terminal T3 of the operational amplifier OP2, and converts the first current Ia(i,2) flowing through the read line B2 to the first voltage Va(i,2). Resistor RE3 is connected to both the negative input terminal T2 and output terminal T3 of the operational amplifier OP3, and converts the first current Ia(i,3) flowing through the read line B3 to the first voltage Va(i,3). Resistor REn is connected to both the negative input terminal T2 and output terminal T3 of the operational amplifier OPn, and converts the first current Ia(i,n) flowing through the read line Bn to the first voltage Va(i,n).

[0042] Figure 3 is a circuit diagram showing an example of the circuit configuration of the amplification unit 300 and subtraction circuit 400 of the sensor device shown in Figure 1. Figure 3 also includes an example of the circuit configuration of the conversion unit 200.

[0043] (Amplification section 300) As shown in Figure 3, the amplification unit 300 is provided with fixed resistors R2-j (R2-1 to R2-n), variable resistors R3-j (R3-1 to R3-n), and operational amplifiers OP3-j (OP3-1 to OP3-n). The amplification unit 300 also has, for example, a plurality of first amplification circuits 301 and one second amplification circuit 302. Each of the plurality of first amplification circuits 301 is connected to a corresponding first conversion circuit 201. Each of the first amplification circuits 301 is provided with fixed resistors R2-2 to R2-n, variable resistors R3-1 to R3-n, and operational amplifiers OP3-2 to OP3-n. The first amplifier circuit 301 amplifies the first voltage Va(i,j) from the first conversion circuit 201 with a predetermined gain GA based on the ratio of fixed resistors R2-2 to R2-n and variable resistors R3-2 to R3-n, and outputs the first amplified voltage VVa(i,j). Furthermore, switches SWB-2 to SWB-n are connected to each of the multiple first amplifier circuits 301. This allows for the selective output of the first amplified voltages VVa(i,2) to VVa(i,n) corresponding to each of the multiple readout lines B2 to Bn to the subtraction circuit 400. The second amplifier circuit 302 is connected to the second conversion circuit 202. The second amplifier circuit 302 is equipped with a fixed resistor R2-1, a variable resistor R3-1, and an operational amplifier OP3-1. The second amplifier circuit 302 amplifies the second voltage Vb(i,1) from the second conversion circuit 202 with a predetermined gain GB based on the ratio of the fixed resistor R2-1 and the variable resistor R3-1, and outputs the second amplified voltage VVb(i,1).

[0044] (Subtraction circuit 400) The subtraction circuit 400 includes, for example, an operational amplifier OP400. In the subtraction circuit 400, for example, a first amplification voltage VVa(i,j) is input to the negative input terminal of the operational amplifier of the subtraction circuit 400, and for example, a second amplification voltage VVb(i,1) is input to the positive input terminal of the operational amplifier of the subtraction circuit 400, and the difference between the first amplification voltage VVa(i,j) and the second amplification voltage VVb(i,1) is calculated.

[0045] A digital-to-analog converter (ADC) is provided after the subtraction circuit 400 (see Figures 1 and 3). The output from the operational amplifier OP400 of the subtraction circuit 400 is converted into a digital signal by the ADC.

[0046] [Preparation for measurement operation in sensor device 1] In sensor device 1, when measuring electromagnetic waves such as infrared rays, the gain of each output of multiple resistive elements Z can be adjusted using the first amplification circuit 301 and the second amplification circuit 302. To perform such gain adjustment, the gain G (GA,GB) corresponding to each of the multiple resistive elements Z is determined before performing the electromagnetic wave measurement operation. The procedure is described below.

[0047] (Determination of gain G) First, the sensor device 1 is placed in a predetermined temperature environment (for example, an environment at 25°C). Then, with a surface that can be considered to have a uniform temperature facing one or more resistive elements Za(i,j), the first voltage Va0(i,j) corresponding to each of the one or more resistive elements Za(i,j) is sequentially acquired in the predetermined temperature environment (an environment at 25°C). Note that the first voltage obtained with a surface that can be considered to have a uniform temperature facing the resistive elements Za(i,j) is referred to as the first voltage Va0(i,j) for convenience, in order to distinguish it from the first voltage obtained when performing electromagnetic wave measurement from the object being measured. Furthermore, in conjunction with acquiring the first voltage Va0(i,j), the second voltage Vb0(i,1) obtained by converting the second current Ib(i,1) flowing through one of the multiple read lines B to which each of the one or more resistor elements Zb is connected (read line B1 in the example of Figure 2) is sequentially acquired under a predetermined temperature environment (an environment of 25°C). Also, the "surface that can be considered to have a uniform temperature" here refers to, for example, a shutter. The surface of a plate-shaped member that can be opened and closed is such that the overall temperature range (the difference between the maximum and minimum temperatures) falls within the temperature resolution of the sensor device. For example, it can be a surface with an overall temperature range (the difference between the maximum and minimum temperatures) of 0.05°C or less. Furthermore, the "uniform temperature" referred to here may be the same as or different from the ambient temperature (25°C).

[0048] Specifically, the resistors to be measured, Za(i,j) and Zb(i,1), are selected by energizing switch SWA1 of the power supply line Ai to which they are connected. A voltage is then applied to the selected power supply line Ai from the DC power supply PS1 so that it reaches a first potential V1. Switches SWA1 corresponding to the unselected power supply lines Ai are left in a non-conducting state. Furthermore, switches SWA2 corresponding to the unselected power supply lines Ai are made conductive, and a voltage is applied to the unselected power supply lines Ai from the DC power supply PS2 so that it reaches a second potential V2. Switches SWA2 corresponding to the selected power supply lines Ai are left in a non-conducting state. The example in Figure 2 shows the state in which resistors Zb(1,1), Za(1,2) to Za(1,n) are selected. Specifically, by making switch SWA1-1 conductive, power supply line A1 is selected, and voltage is applied to power supply line A1 from DC power supply PS1. On the other hand, switches SWA1-2 to SWA1-m, which correspond to power supply lines A2 to Am that are not selected, are kept in a non-conducting state. Furthermore, switches SWA2-2 to SWA2-m, which correspond to power supply lines A2 to Am that are not selected, are made conductive, and voltage is applied to power supply lines A2 to Am from DC power supply PS2. On the other hand, switch SWA2-1, which corresponds to the selected power supply line A1, is kept in a non-conducting state. In addition, the potential of the negative input terminal T2 of each of the operational amplifiers OP1 to OPn of the conversion unit 200 is also the second potential V2. As a result, the voltage applied to the resistors Z other than the selected resistors Zb(1,1) and Za(1,2) to Za(1,n) is 0, so no current flows through the resistors Z other than Zb(1,1) and Za(1,2) to Za(1,n). A voltage equivalent to the potential difference between the first potential V1 and the second potential V2 is applied to the selected resistors Zb(1,1) and Za(1,2) to Za(1,n), and a first current Ia(1,j) corresponding to the resistance values ​​of Za(1,2) to Za(1,n) flows through the readout line Bj, and a second current Ib(1,1) corresponding to the resistance value of Zb(1,1) flows through the readout line B1.

[0049] Next, the output voltages corresponding to the selected resistors Za(i,j) and Zb(i,1) are obtained. Specifically, the output voltages from the output terminal T3 of the operational amplifier OP corresponding to each of the selected resistors Za(i,j) and Zb(i,1) connected to both the selected power supply line Ai and the respective readout lines B are obtained. In the example in Figure 2, for example, the second voltage Vb0(1,1) from the output terminal T3 of operational amplifier OP1 corresponding to the resistor Zb(1,1) connected to both power supply line A1 and readout line B1 is obtained. Also, the first voltage Va0(1,2) from the output terminal T3 of operational amplifier OP2 corresponding to the resistor Za(1,2) connected to both power supply line A1 and readout line B2 is obtained. Also, the first voltage Va0(1,3) from the output terminal T3 of operational amplifier OP3 corresponding to the resistor Za(1,3) connected to both power supply line A1 and readout line B3 is obtained. Furthermore, the first voltage Va0(1,n) from the output terminal T3 of the operational amplifier OPn, corresponding to the resistor Za(1,n) connected to both the power supply line A1 and the readout line Bn, is obtained. For each of the other power supply lines A2 to Am selected, the first voltage Va0(i,j) and the second voltage Vb0(i,1) corresponding to the resistor Za(i,j) and resistor Zb(i,1) connected to each of the power supply lines A2 to Am are obtained, respectively.

[0050] Next, from the obtained values ​​of the first voltage Va0(i,j) and the second voltage Vb0(i,1), the gain GA for each of the one or more resistive elements Za and the gain GB corresponding to each of the one or more resistive elements Zb are determined. Specifically, the gains amplified by the first amplifier circuit 301 When the first amplified voltage VVa0(i,j) is expressed by equation (1.1) below, and the second amplified voltage VVb0(i,1) amplified by the second amplifier circuit 302 is expressed by equation (1.2) below, as shown in equation (1.3), the gain GA(i,j) corresponding to the resistor Za(i,j) and the gain GB(i,1) corresponding to the resistor Zb(i,1) are determined such that the difference ΔV0(i,j) between the first amplified voltage VVa0(i,j) and the second amplified voltage VVb0(i,1) is within a predetermined range for any i and any j, that is, the difference ΔV0(i,j) is within a predetermined range that does not depend on any of the resistors Za(i,j) and any of the resistors Zb(i,j). Ideally, the difference ΔV0(i,j) between the first amplification voltage VVa0(i,j) and the second amplification voltage VVb0(i,j) should be a predetermined value (Const.) independent of i and j.

[0051] VVa0(i,j)=Va0(i,j)×GA(i,j) ……(1.1) VVb0(i,1)=Vb0(i,1)×GB(i,1) ……(1.2) ΔV0(i,j)=VVa0(i,j)-VVb0(i,1)≒Const. ……(1.3)

[0052] For example, if we set ΔV0(i,j)=0 and GB(i,1)=α (where α is a constant), then GA(i,j) can be expressed by the following equation (1.4). GA(i,j)=α×{Vb0(i,1) / Va0(i,j)} …(1.4) Thus, the gain GB corresponding to all resistive elements Zb(i,1) in the sensor device 1, that is, the gains GB(1,1) to GB(m,1) corresponding to resistive elements Zb(1,1) to Zb(m,1), may all be set to a common value α (where α is a constant).

[0053] In particular, if we set ΔV0(i,j)=0 and GB(i,1)=1, then GA(i,j) can be expressed by the following equation (1.5). GA(i,j)={Vb0(i,1) / Va0(i,j)} …(1.5)

[0054] Since resistors Za(i,j) and Zb(i,1) are placed under the same ambient temperature, the difference between Va0(i,j) and Vb0(i,1) should ideally be independent of i and j. For example, if the temperature of a "surface that can be considered to have a uniform temperature" facing one or more resistors Za(i,j) and the ambient temperature are both the same, the difference between Va0(i,j) and Vb0(i,1) should be zero, independent of i and j. If the temperature of the "surface that can be considered to have a uniform temperature" differs from the ambient temperature, the difference between Va0(i,j) and Vb0(i,1) should be an independent value (≠0) independent of i and j. However, in reality, due to individual differences among multiple resistors Z, there is variation in the resistance values ​​of multiple resistors Z. The reason for individual differences among multiple resistive elements Z is that variations in the film thickness of the resistive elements Z occur due to manufacturing tolerances, or variations in the spacing between the two electrodes that supply voltage to the resistive elements Z. Therefore, in order to make the difference between the first amplification voltage VVa0(i,j) and the second amplification voltage VVb0(i,1) a predetermined value that is as independent as possible of i and j, for example, the gain GA for adjusting the first voltage Va0(i,j) corresponding to the resistive element Za(i,j) as a so-called active cell is determined in accordance with each resistive element Za(i,j), using the second voltage Vb0(i,1) corresponding to the resistive element Zb(i,1) as a so-called blind cell covered by the electromagnetic wave shield 41 as a reference. Here, the "predetermined value independent of i and j" is not limited to a specific value as long as it is a predetermined fixed value. For example, if the temperature of the "surface that can be considered to have a uniform temperature" is the same as the ambient temperature, this "predetermined value independent of i and j" may be zero or a value other than zero. Also, if the temperature of the "surface that can be considered to have a uniform temperature" is different from the ambient temperature, this "predetermined value independent of i and j" may be zero or a value other than zero.

[0055] [Measurement operation in sensor device 1] The sensor device 1 can measure the output voltage corresponding to each of the multiple resistive elements Z in a measurement environment where electromagnetic waves such as infrared rays are irradiated, for example, as shown below. The following measurement operation is performed by commands from the control unit 500.

[0056] (Temperature measurement of the object being measured) This section describes the procedure for measuring the surface temperature of an object by detecting electromagnetic waves (infrared radiation) emitted from that object. Here, the measurement accuracy can be improved by amplifying at least one of the first voltage Va(i,j) and the second voltage Vb(i,1) with the gains GA and GB determined as described above.

[0057] First, the sensor device 1 is placed in a predetermined temperature environment (for example, an environment at 25°C). Then, with the object to be measured facing one or more resistive elements Za(i,j), the power supply line selection unit SA selects, for example, a power supply line Ai (i is 1 to m) based on a command from the control unit 500, and simultaneously opens the switch SWB-j (j is 2 to n) for connection to the subtraction circuit 400. As a result, the difference ΔV(i,j) between the first amplified voltage VVa(i,i) and the second amplified voltage VVb(i,1) can be output to the analog-to-digital conversion circuit ADC. In this case, for example, for each power supply line Ai, switches SWB-2 to SWB-n are sequentially opened one by one to output the difference ΔV(i,2) to ΔV(i,n) to the analog-to-digital conversion circuit ADC. This operation is repeated for all power supply lines A1 to Am.

[0058] In the measurement operation described above, the first voltage Va(i,j) corresponding to each of the one or more resistive elements Za(i,j) and the second voltage Vb(i,1) obtained by converting the second current Ib(i,1) flowing through one of the multiple readout lines B to which each of the one or more resistive elements Zb is connected (readout line B1 in the example of Figure 2) are amplified in the first amplifier circuit 301 and the second amplifier circuit 302, respectively, with predetermined gains GA and GB as shown in equations (2.1) and (2.2), to obtain the first amplified voltage VVa(i,j) and the second amplified voltage VVb(i,1). VVa(i,j)=Va(i,j)×GA ……(2.1) VVb(i,1)=Vb(i,1)×GB ……(2.2)

[0059] In subtraction circuit 400, the difference ΔV(i,j) between the first amplification voltage VVa(i,j) and the second amplification voltage VVb(i,1) is calculated as shown in equation (2.3). Furthermore, if the difference ΔV(i,j) is a small value, the signal may be amplified with a predetermined gain G. ΔV(i,j)=(VVa(i,j)-VVb(i,1))×G ……(2.3) When calculating the difference ΔV(i,j), the control unit 500 transmits multiple first amplified voltages VVa(i,j) to the subtraction circuit 400 at different timings by sequentially energizing switches SWB-2 to SWB-n in the amplification unit 300 one by one. For example, when calculating the difference ΔV(i,2), only switch SWB-2 of switches SWB-2 to SWB-n is energized; when calculating the difference ΔV(i,3), only switch SWB-3 of switches SWB-2 to SWB-n is energized; and when calculating the difference ΔV(i,n), only switch SWB-n of switches SWB-2 to SWB-n is energized.

[0060] The analog-to-digital converter (ADC) converts the difference ΔV(i,j) input from the subtraction circuit 400 into a digital signal representing the intensity of infrared radiation and outputs it. This allows for the measurement of the surface temperature of the object being measured. When measuring the object, if the difference ΔV(i,j) is equal to a predetermined value independent of i and j, then the temperature of the object is considered to be the same as the temperature of the surface deemed to have a uniform temperature, which was used during gain determination. If the difference ΔV(i,j) is different from the predetermined value independent of i and j, the temperature of the object is calculated from the difference between the difference ΔV(i,j) and the predetermined value independent of i and j.

[0061] [Manufacturing method for sensor device 1] In the sensor device 1, the gains GA and GB for each resistive element Z can be determined as described above during the post-manufacturing and usage phase, and the output voltage corresponding to each resistive element Z can be corrected. Alternatively, similar to the "determination of gain G" as a preparatory step for "temperature measurement of the object to be measured" in the "measurement operation in sensor device 1" described above, the gains GA and GB for each resistive element Z can be determined during the manufacturing phase of the sensor device 1, and a correction can be applied to the output voltage corresponding to each resistive element Z during use.

[0062] Specifically, first, a structure is prepared that includes one or more power supply lines A (A1 to Am), multiple read lines B (B1 to Bm), one or more resistors Za (i,j), and one or more resistors Zb, and this structure is placed in a predetermined temperature environment (for example, an environment of 25°C).

[0063] Next, with one or more resistive elements Za(i,j) facing a surface that can be considered to have a uniform temperature, the first voltage Va0(i,j) obtained by converting the first current flowing through one of the multiple readout lines B(B1~Bm) to which each of the one or more resistive elements Za(i,j) is connected is measured under a predetermined ambient temperature (25°C). The "surface that can be considered to have a uniform temperature" here is as described in the "determination of gain G" explained earlier.

[0064] Next, the second voltage Vb0(i,1), obtained by converting the second current flowing through one of the multiple readout lines B(B1~Bm), each of which is connected to one or more resistor elements Zb, is measured under a predetermined ambient temperature (25°C).

[0065] Next, the first amplified voltage VVa0(i,j) is obtained by amplifying the first voltage Va(i,j) corresponding to each of the one or more resistive elements Za connected to one of the power supply lines A, Ai, with the first gain GA corresponding to each of the one or more resistive elements Za, and the second voltage Vb0(i,1) corresponds to one of the one or more resistive elements Zb connected to one of the power supply lines A, Ai, Ai, or Vb0(i,1) corresponds to one of the resistive elements Zb connected to one of the power supply lines Ai, Ai, Ai, Determine the gain GA corresponding to each of the one or more resistor elements Za(i,1) connected to one power supply line Ai and the gain GB corresponding to one resistor element Zb connected to one power supply line Ai, or determine the gain GA corresponding to each of the one or more resistor elements Za connected to one power supply line Ai, such that the difference ΔV0(i,j) between the second amplified voltage VVb0(i,1) amplified with the gain GB corresponding to Zb is within a predetermined range for any i and any j.

[0066] In the sensor device 1 manufactured in this manner, the first amplified voltage VVa(i,j) and the second amplified voltage VVb(i,1), respectively, are output by amplified by predetermined gains GA and GB, respectively, for the first voltage Va(i,j) and the second voltage Vb(i,1) obtained when measuring the object to be measured.

[0067] [Effects of Sensor Device 1] As described above, in the sensor device 1 of this embodiment, the gain GA corresponding to the resistive element Za and the gain GB corresponding to the resistive element Zb are determined using the ratio of the first voltage Va corresponding to the resistive element Za and the second voltage Vb corresponding to the resistive element Zb, and the first voltage Va and the second voltage Vb are adjusted using these gains GA and GB. Therefore, variations in the characteristic value of the resistive element Za caused by manufacturing errors can be corrected. Accordingly, the sensor device 1 can achieve high measurement accuracy for the physical quantity to be measured, for example, the intensity of electromagnetic waves such as infrared rays irradiated onto the detection unit 100. Furthermore, the manufacturing method of the sensor device 1 makes it possible to manufacture the sensor device described above.

[0068] Furthermore, in the sensor device 1, all of the multiple resistor elements Zb connected to the multiple power supply lines A are connected to one of the multiple read lines B, specifically read line B1. In addition, a first amplification circuit 301 that amplifies the first voltage Va(i,j) or a second amplification circuit 302 that amplifies the second voltage Vb(i,1) is connected to each read line B. Therefore, after amplifying the first voltage Va(i,j) in the first amplification circuit 301 and amplifying the second voltage Vb(i,1) in the second amplification circuit 302 are performed separately, the difference between the first amplified voltage VVa(i,j) and the second amplified voltage VVb(i,1) can be taken.

[0069] Furthermore, in sensor device 1, if the resistance value of resistor element Z(i,j) is R(i,j) and the resistance value of resistor element REj is RREj, then the first voltage Va(i,j) and the second voltage Vb(i,1) are expressed as shown in equations (3.1) and (3.2) below. Va(i,j)=RREj×(V2-V1) / R(i,j) ……(3.1) Vb(i,1)=RRE1×(V2-V1) / R(i,1) ……(3.2) Here, if the resistive element Z is, for example, a thermistor, then let the thermistor's B constant be β, its temperature be T, its reference temperature be T0, and the resistance value of the resistive element Z(i,j) at the reference temperature be R0(i,j). R(i,j)=R0(i,j)×exp{β×(1 / T-1 / T0)} ……(3.3) It will look like this. In other words, Va(i,j) ={RREj×(V2-V1) / R0(i,j)}×1 / exp{β×(1 / T-1 / T0)}Vb(i,1) ={RRE1×(V2-V1) / R0(i,1)}×1 / exp{β×(1 / T-1 / T0)} ……(3.4) This is the result. Variations in the film thickness of the resistive element Z and variations in the spacing between the two electrodes that supply voltage to the resistive element Z are reflected in the variation in the value of R0(i,j) in equation (3.4) above.

[0070] In the sensor device 1 of this embodiment, the gain GA(i,j) and gain GB(i,1) corresponding to each resistor Z are determined using a first voltage Va0(i,j) obtained at a predetermined ambient temperature with a surface that can be considered to have a uniform temperature facing the resistor element Za(i,j), and a second voltage Vb0(i,1) obtained at the predetermined ambient temperature, in order to suppress the influence of variations in the value of R0(i,j) among multiple resistor elements Z. Furthermore, in the sensor device 1 of this embodiment, the first voltage Va and the second voltage Vb are adjusted using these gains GA(i,j) and GB(i,1) to obtain a first amplified voltage VVa(i,j) and a second amplified voltage VVb(i,1) that can be expressed as shown in equations (3.5) and (3.6) below. VVa(i,j) =Va(i,j)×GA(i,j) ={RREj×(V2-V1)×GA(i,j) / R0(i,j)}×1 / exp{β×(1 / T-1 / T0)} ……(3.5) VVb(i,1) =Vb(i,1)×GB(i,1) ={RRE1×(V2-V1)×GB(i,1) / R0(i,1)}×1 / exp{β×(1 / T-1 / T0)}……(3.6)

[0071] In the sensor device 1 of this embodiment, the variation in the value of "GA(i,j) / R0(i,j)" in equation (3.5) and the variation in the value of "GB(i,1) / R0(i,1)" in equation (3.6) are suppressed. The value of R0(i,j) is independent of the ambient temperature when the first voltage Va0(i,j) and second voltage Vb0(i,1) are acquired to determine the gains GA(i,j) and GB(i,1). Therefore, if the ambient temperatures at which the first voltage Va0(i,j) and the second voltage Vb0(i,1) corresponding to multiple resistor elements Z are acquired are the same, then regardless of the ambient temperature at which the first voltage Va0(i,j) and the second voltage Vb0(i,1) are acquired, the gains GA(i,j) and GB(i,1) can be determined in such a way that variations in the values ​​of "GA(i,j) / R0(i,j)" and "GB(i,1) / R0(i,1)" are suppressed, respectively. In other words, even if the ambient temperature during electromagnetic wave measurement changes compared to the ambient temperature when acquiring the first voltage Va0(i,j) and second voltage Vb0(i,1) used to determine gain GA(i,j) and gain GB(i,1), the influence of variations in the characteristic values ​​of multiple resistors Z caused by manufacturing errors on the first amplified voltage VVa(i,j) and second amplified voltage VVb(i,1) can be suppressed, just as if the measurement operation were performed at the same ambient temperature as when acquiring the first voltage Va0(i,j) and second voltage Vb0(i,1), thereby achieving high measurement accuracy for the intensity of electromagnetic waves such as infrared radiation.

[0072] <2. Variant> Although the present disclosure has been described above with reference to embodiments, the present disclosure is not limited to these embodiments, and various modifications are possible.

[0073] For example, in the sensor device 1 of the above embodiment, as shown in Figure 3, the amplification unit 300 has both a first amplification circuit 301 and a second amplification circuit 302, but the disclosure is not limited thereto. For example, in the above embodiment, if GB(1,1)~GB(m,1)=1 for all of the gains GB(1,1)~GB(m,1) of the resistive elements Zb(1,1)~Zb(m,1), then it is not necessary to amplify the second voltage Vb(i,j). For this reason, the amplification unit 300 does not need to have a second amplification circuit 302, as shown in the first modified sensor device 1A in Figure 4. In that case, the subtraction circuit 400 calculates and outputs the difference between the first amplified voltage VVa(i,j) and the second voltage Vb(i,1).

[0074] Furthermore, in the sensor device 1 of the above embodiment, the gain GA is determined based on the gain GB of the resistive element Zb(i,1) as a blind cell covered by the electromagnetic wave shield 41, but this disclosure is not limited thereto. For example, the gains GA and GB may be determined based on the resistive element Za(i,2) as an active cell connected to one of the plurality of readout lines B, for example, readout line B2. In particular, if GA(1,2)~GA(m,2)=1 is set for all of the gains GA(1,2)~GA(m,2) of resistive elements Za(1,2)~Za(m,2), there is no need to amplify the first voltage Va(i,2). For this reason, the amplification unit 300 does not need to have a first amplification circuit 301 corresponding to readout line B2, as shown in the second modified sensor device 1B in Figure 5.

[0075] In the sensor device 1B shown in Figure 5, the gain GB can be determined, for example, as follows. First, the sensor device 1B is placed in a predetermined temperature environment (for example, an environment at 25°C). Then, with a surface that can be considered to have a uniform temperature facing one or more resistive elements Za(i,j), the first voltage Va0(i,j) corresponding to each of the one or more resistive elements Za(i,j) is sequentially acquired in the predetermined temperature environment (an environment at 25°C). Furthermore, in conjunction with the acquisition of the first voltage Va0(i,j), the second voltage Vb0(i,1) obtained by converting the second current Ib(i,1) flowing through one of the corresponding readout lines B (readout line B1 in the example of Figure 5) to which each of the one or more resistive elements Zb is connected is sequentially acquired in the predetermined temperature environment (an environment at 25°C).

[0076] Specifically, the output voltages corresponding to the resistors Za(i,j) and Zb(i,1) selected by switches SWA1 and SWB2 are obtained. Specifically, the output voltages from the output terminal T3 of the operational amplifier OP corresponding to each of the selected readout lines B, corresponding to the resistors Za(i,j) and Zb(i,1) connected to both the selected power supply line Ai and their respective readout lines B, are obtained. Example For example, the second voltage Vb0(1,1) is obtained from the output terminal T3 of operational amplifier OP1, which corresponds to the resistor element Zb(1,1) connected to both the power supply line A1 and the read line B1. Also, the first voltage Va0(1,2) is obtained from the output terminal T3 of operational amplifier OP2, which corresponds to the resistor element Za(1,2) connected to both the power supply line A1 and the read line B2. Also, the first voltage Va0(1,3) is obtained from the output terminal T3 of operational amplifier OP3, which corresponds to the resistor element Za(1,3) connected to both the power supply line A1 and the read line B3. Furthermore, the first voltage Va0(1,n) is obtained from the output terminal T3 of operational amplifier OPn, which corresponds to the resistor element Za(1,n) connected to both the power supply line A1 and the read line Bn. In the case where other power supply lines A2 to Am are selected, the first voltage Va0(i,j) and the second voltage Vb0(i,1) corresponding to the resistor element Za(i,j) and resistor element Zb(i,1) connected to each of the power supply lines A2 to Am are obtained, respectively.

[0077] Next, the gain GB corresponding to each of the one or more resistors Zb is determined from the obtained values ​​of the first voltage Va0(i,2) and the second voltage Vb0(i,1). Specifically, the gain GB(i,1) corresponding to the resistor Zb(i,1) is determined such that the difference ΔV0(i,2) between the first voltage Va0(i,2) and the second amplified voltage VVb0(i,1) amplified by the second amplifier circuit 302 is within a predetermined range for any i. That is, the gain GB(i,1) corresponding to the resistor Zb(i,1) is determined such that the difference ΔV0(i,2) is within a predetermined range that does not depend on any of the resistors Za(i,j) or any of the resistors Zb(i,j). Here, it is ideal that the difference ΔV0(i,2) between the first voltage Va0(i,2) and the second amplified voltage VVb0(i,1) is a predetermined value Const. that does not depend on i.

[0078] Furthermore, the gain GA(i,j) (j≧3) corresponding to the resistor element Za(i,j) is determined such that the difference ΔV0(i,j) between the first amplification voltage VVa0(i,j) (j≧3) amplified by the first amplification circuit 301 and the second amplification voltage VVb0(i,1) amplified by the second amplification circuit 302 is within a predetermined range for all i and all j. In other words, the gain GA(i,j) corresponding to the resistor element Za(i,j) is determined such that the difference ΔV0(i,j) is within a predetermined range that does not depend on any of the resistor elements Za(i,j) or any of the resistor elements Zb(i,j). Here, it is ideal that the difference ΔV0(i,j) between the first amplification voltage VVa0(i,j) and the second amplification voltage VVb0(i,1) is a predetermined value Const. that does not depend on i and j.

[0079] Furthermore, in the sensor device of this disclosure, if the only readout line B to which the resistive element Za is connected is readout line B2, the amplification unit 300 does not need to have the first amplification circuit 301. In that case, the gain GB(i,1) corresponding to the resistive element Zb(i,1) should be determined such that the difference between the first voltage Va0(i,2) and the second amplified voltage VVb0(i,1) is within a predetermined range for any i. In the case of a sensor device to which the resistive element Za is connected is only readout line B2, the gain GB can be determined in the same manner as the procedure for determining the gain GB in the sensor device 1B shown in Figure 5.

[0080] Furthermore, in the sensor device 1 of the above embodiment, the conversion unit 200 has a plurality of resistor elements RE (RE1 to REn), but this disclosure is not limited thereto. For example, as in the sensor device 2 shown in Figure 6, instead of a plurality of resistor elements RE (RE1 to REn), a plurality of capacitive elements CP (CP1 to CPn) may be provided corresponding to a plurality of operational amplifiers OP (OP1 to OPn). Each of the plurality of capacitive elements CP is connected to both the negative input terminal T2 and the output terminal T3 of a corresponding operational amplifier OP, and converts the current flowing through the read line B connected to the negative input terminal T2 into a voltage. Specifically, in the example in Figure 6, the capacitive element CP1 is connected to both the negative input terminal T2 and the output terminal T3 of the operational amplifier OP1, and converts the current flowing through the read line B1 into a voltage. Similarly, the capacitance element CP2 is connected to both the negative input terminal T2 and output terminal T3 of the operational amplifier OP2, converting the current flowing through the read line B2 into a voltage; the capacitance element CP3 is connected to both the negative input terminal T2 and output terminal T3 of the operational amplifier OP3, converting the current flowing through the read line B3 into a voltage; and the capacitance element CPn is connected to both the negative input terminal T2 and output terminal T3 of the operational amplifier OPn, converting the current flowing through the read line Bn into a voltage.

[0081] Furthermore, although the sensor device 1 of the above embodiment has a plurality of resistors RE in the conversion unit 200, the present invention is not limited thereto, and a plurality of diodes may be used instead of a plurality of resistors RE. In that case, the current flowing through each of the plurality of read lines will be converted into a voltage by the plurality of diodes according to the current-voltage characteristics of each of the plurality of diodes.

[0082] Furthermore, while the sensor device 1 of the above embodiment is equipped with resistive elements Z as the first impedance element and the second impedance element, the sensor device of this disclosure is not limited thereto. The sensor device of this disclosure may, for example, have a semiconductor element such as a diode whose electrical characteristics change with temperature instead of the resistive elements Z.

[0083] Furthermore, while the sensor device 1 of the above embodiment is shown as having multiple power supply lines A as first wiring, the present disclosure is not limited thereto. The sensor device of the present disclosure may have only one first wiring.

[0084] Furthermore, the effects described herein are merely illustrative and not limiting, and other effects may also occur. [Explanation of Symbols]

[0085] 1...Sensor device, 41...Electromagnetic shield, 100...Detection unit, 101...First detection circuit, 102...Second detection circuit, 200...Conversion unit, 201...First conversion circuit, 202...Second conversion circuit, 300...Amplification unit, 301...First amplification circuit, 302...Second amplification circuit, 400...Calculation unit (subtraction circuit), 500...Control unit, A (A1~Am)...Power supply line, B (B1~Bn)...Readout line, OP (OP1~OPn)...Operation amplifier, PS1, PS2...DC power supply, Za, Zb...Resistor element.

Claims

1. One or more first wirings Multiple second wirings, each extending in a direction different from the one or more first wirings, One or more first impedance elements are connected to both one of the one or more first wirings and one of the plurality of second wirings, One or more second impedance elements are connected to both one of the one or more first wirings and one of the plurality of second wirings, One or more first conversion circuits, each of which converts a first current flowing through a corresponding one of the plurality of second wirings to which each of the one or more first impedance elements is connected into a first voltage, A second conversion circuit that converts a second current flowing through a corresponding one of the plurality of second wirings to which each of the one or more second impedance elements is connected into a second voltage, At least one of the following: one or more first amplification circuits, each outputting a first amplified voltage obtained by amplifying the first voltage corresponding to each of the one or more first impedance elements with a first gain corresponding to each of the one or more first impedance elements; and a second amplification circuit, each outputting a second amplified voltage obtained by amplifying the second voltage corresponding to each of the one or more second impedance elements with a second gain corresponding to each of the one or more second impedance elements; A subtraction circuit that outputs at least one of the following: the difference between the first amplified voltage and the second amplified voltage, the difference between the first amplified voltage and the second voltage, and the difference between the first voltage and the second amplified voltage. A sensor device equipped with this device.

2. The system further comprises an electromagnetic shield covering the one or more second impedance elements. The sensor device according to claim 1.

3. The one or more first wires mentioned above are multiple first wires, The one or more first impedance elements are a plurality of first impedance elements. The one or more second impedance elements mentioned above are multiple second impedance elements, The plurality of second impedance elements connected to the plurality of first wirings are connected to one of the plurality of second wirings. The sensor device according to claim 1.

4. The system comprises both the first amplification circuit and the second amplification circuit, The second amplification circuit outputs a second amplified voltage obtained by amplifying the second voltage corresponding to each of the plurality of second impedance elements with a common second gain. The sensor device according to claim 3.

5. The system comprises only the first amplifier circuit among the first and second amplifier circuits. The sensor device according to claim 1.

6. The system comprises only the second amplifier circuit among the first and second amplifier circuits. The sensor device according to claim 1.

7. It further includes a control unit, The control unit, With a surface that can be considered to have a uniform temperature facing the one or more first impedance elements, the first voltage corresponding to each of the one or more first impedance elements is measured at a predetermined ambient temperature. The second voltage corresponding to each of the one or more second impedance elements is measured at the predetermined ambient temperature, Determine the first gain corresponding to each of the one or more first impedance elements connected to the one first wiring and the second gain corresponding to each of the one or more first impedance elements connected to the one first wiring, or determine the first gain corresponding to each of the one or more first impedance elements connected to the one first wiring, such that the difference between the first amplified voltage based on the first voltage corresponding to each of the one or more first impedance elements connected to the one first wiring and the second amplified voltage based on the second voltage corresponding to one of the one or more second impedance elements connected to the one first wiring is within a predetermined range that does not depend on any of the one or more first impedance elements or any of the one or more second impedance elements. Perform The sensor device according to claim 2.

8. It further includes a control unit, The control unit, With a surface that can be considered to have a uniform temperature facing the one or more first impedance elements, the first voltage corresponding to each of the one or more first impedance elements is measured at a predetermined ambient temperature. The second voltage corresponding to each of the one or more second impedance elements is measured at the predetermined ambient temperature, The second gain corresponding to the one second impedance element connected to the one first wiring is determined such that the difference between the first voltage corresponding to the first impedance element connected to one of the one or more first wirings and the second amplification voltage based on the second voltage corresponding to the one second impedance element connected to the one first wiring is within a predetermined range that does not depend on any of the one or more first impedance elements or any of the one or more second impedance elements. Perform The sensor device according to claim 2.

9. The system comprises both the first amplification circuit and the second amplification circuit, The one or more first impedance elements are a plurality of first impedance elements. Each of the two or more second wires among the plurality of second wires is connected to at least one of the plurality of first impedance elements. The first amplification circuit is connected to all but one of the two or more second wirings, The second amplification circuit is connected to the second wiring to which the second impedance element is connected. The sensor device according to claim 2.

10. It further includes a control unit, The control unit, With a surface that can be considered to have a uniform temperature facing the one or more first impedance elements, the first voltage corresponding to each of the one or more first impedance elements is measured at a predetermined ambient temperature. The second voltage corresponding to each of the one or more second impedance elements is measured at the predetermined ambient temperature, The second gain corresponding to the one second impedance element connected to the one first wiring is determined such that the difference between the first voltage corresponding to one first impedance element connected to one of the one or more first wirings and one second wiring to which the first amplification circuit is not connected, and the second amplification voltage based on the second voltage corresponding to one second impedance element connected to one of the one or more second impedance elements, is within a predetermined range that does not depend on any of the one or more first impedance elements or any of the one or more second impedance elements. The first gain corresponding to each of the one or more first impedance elements connected to the one first wiring and connected to the first amplifier circuit via the second wiring is determined such that the difference between the first amplification voltage based on the first voltage corresponding to each of the one or more first impedance elements connected to the one first wiring and connected to the first amplifier circuit via the second wiring, and the second amplification voltage based on the second voltage corresponding to the one second impedance element connected to the one first wiring, is within a predetermined range that does not depend on any of the one or more first impedance elements or any of the one or more second impedance elements. Perform The sensor device according to claim 9.

11. A structure comprising one or more first wires, a plurality of second wires each extending in a direction different from the one or more first wires, one or more first impedance elements each connected to one of the one or more first wires and one of the plurality of second wires, and one or more second impedance elements each connected to one of the one or more first wires and one of the plurality of second wires, With a surface that can be considered to have a uniform temperature facing the one or more first impedance elements, the first voltage corresponding to each of the one or more first impedance elements is measured at a predetermined ambient temperature, obtained by converting the first current flowing through one of the plurality of second wirings to which each of the one or more first impedance elements is connected. The second voltage corresponding to each of the one or more second impedance elements is measured at the predetermined ambient temperature, obtained by converting the second current flowing through one of the plurality of second wirings to which each of the one or more second impedance elements is connected. Determine the first gain corresponding to each of the one or more first impedance elements connected to one of the one or more first wirings and the second gain corresponding to each of the one or more first impedance elements connected to one of the one or more first wirings, or determine the first gain corresponding to each of the one or more first impedance elements connected to one of the one or more first wirings, such that the difference between the first amplified voltage obtained by amplifying the first voltage corresponding to one of the one or more second impedance elements connected to one of the one or more second impedance elements by amplifying the second voltage obtained by amplifying the second voltage corresponding to one of the one or more second impedance elements connected to one of the one or more first impedance elements by the second gain corresponding to one of the second impedance elements is within a predetermined range that does not depend on any of the one or more first impedance elements and any of the one or more second impedance elements. A method for manufacturing a sensor device including a sensor.

12. A structure comprising one or more first wires, a plurality of second wires each extending in a direction different from the one or more first wires, one or more first impedance elements each connected to one of the one or more first wires and one of the plurality of second wires, and one or more second impedance elements each connected to one of the one or more first wires and one of the plurality of second wires, With a surface that can be considered to have a uniform temperature facing the one or more first impedance elements, the first voltage corresponding to each of the one or more first impedance elements is measured at a predetermined ambient temperature, obtained by converting the first current flowing through one of the plurality of second wirings to which each of the one or more first impedance elements is connected. The second voltage corresponding to each of the one or more second impedance elements is measured at the predetermined ambient temperature, obtained by converting the second current flowing through one of the plurality of second wirings to which each of the one or more second impedance elements is connected. The second gain corresponding to the one second impedance element connected to the one first wiring is determined such that the difference between the first voltage corresponding to the first impedance element connected to one of the one or more first wirings, and the second amplified voltage obtained by amplifying the second voltage corresponding to the one second impedance element connected to one of the one or more second impedance elements with a second gain corresponding to the one second impedance element, is within a predetermined range that does not depend on any of the one or more first impedance elements or any of the one or more second impedance elements. A method for manufacturing a sensor device including a sensor.

13. A structure comprising one or more first wires, a plurality of second wires each extending in a direction different from the one or more first wires, one or more first impedance elements each connected to one of the one or more first wires and one of the plurality of second wires, and one or more second impedance elements each connected to one of the one or more first wires and one of the plurality of second wires, With a surface that can be considered to have a uniform temperature facing the one or more first impedance elements, the first voltage corresponding to each of the one or more first impedance elements is measured at a predetermined ambient temperature, obtained by converting the first current flowing through one of the plurality of second wirings to which each of the one or more first impedance elements is connected. The second voltage corresponding to each of the one or more second impedance elements is measured at the predetermined ambient temperature, obtained by converting the second current flowing through one of the plurality of second wirings to which each of the one or more second impedance elements is connected. The second gain corresponding to the one second impedance element connected to the one first wiring is determined such that the difference between the first voltage corresponding to one first impedance element connected to one of the one or more first wirings and one second wiring among the plurality of second wirings, and the second amplified voltage obtained by amplifying the second voltage corresponding to one second impedance element connected to one of the one or more second impedance elements by the second gain corresponding to the one second impedance element, is within a predetermined range that does not depend on any of the one or more first impedance elements or any of the one or more second impedance elements. The first gain corresponding to each of the one or more first impedance elements connected to the other second wiring is determined such that the difference between the first amplified voltage, obtained by amplifying the first voltage corresponding to each of the one or more first impedance elements connected to the one first wiring and the other second wirings of the plurality of second wirings (excluding the one second wiring), by a first gain corresponding to each of the one or more first impedance elements, and the second amplified voltage based on the second voltage corresponding to the one second impedance element connected to the one first wiring, is within a predetermined range that does not depend on any of the one or more first impedance elements or any of the one or more second impedance elements. A method for manufacturing a sensor device including a sensor.

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