Substrate processing apparatus and substrate processing method

Abstract

This technology provides an improvement in the uniformity of airflow within the processing container. [Solution] A substrate processing apparatus according to one aspect of the present disclosure comprises a processing container, a holding unit for holding a substrate in a horizontal position within the processing container, and a fluid supply unit for supplying a processing fluid into the processing container from the side of the processing container, wherein, when the substrate is held by the holding unit, a first distance between a first virtual plane including the upper surface of the substrate and the ceiling surface of the processing container and a second distance between a second virtual plane including the lower surface of the substrate and the bottom surface of the processing container are different, the fluid supply unit has a nozzle for changing the flow of the processing fluid, the nozzle has a first discharge unit that discharges the processing fluid at a first discharge rate from a position above the first virtual plane and a second discharge unit that discharges the processing fluid at a second discharge rate from a position below the second virtual plane, and the relationship between the first discharge rate and the second discharge rate is the same as the relationship between the first distance and the second distance.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method.

Background Art

[0002] Patent Document 1 discloses that when supplying a processing fluid into a processing container, the flow of the processing fluid is changed in a direction that does not hit the outer end in the radial direction of the substrate.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technique capable of improving the uniformity of the airflow in the processing container.

Means for Solving the Problems

[0005] A substrate processing apparatus according to an aspect of the present disclosure includes a processing container, a holding unit that holds a substrate in a horizontal posture at a holding position inside the processing container, and a fluid supply unit that supplies a processing fluid into the processing container from the side of the processing container. In a state where the substrate is held by the holding unit, a first distance between a first virtual plane including the upper surface of the substrate and the ceiling surface of the processing container is different from a second distance between a second virtual plane including the lower surface of the substrate and the bottom surface of the processing container. The fluid supply unit has a nozzle that changes the flow of the processing fluid. The nozzle has a first discharge unit that discharges the processing fluid at a first discharge amount from a position above the first virtual plane, and a second discharge unit that discharges the processing fluid at a second discharge amount from a position below the second virtual plane. The magnitude relationship between the first discharge amount and the second discharge amount coincides with the magnitude relationship between the first distance and the second distance.

Effects of the Invention

[0006] According to this disclosure, the uniformity of the airflow within the processing container can be improved. [Brief explanation of the drawing]

[0007] [Figure 1] Figure 1 is a schematic diagram showing a substrate processing apparatus according to an embodiment. [Figure 2] Figure 2 is a horizontal cross-sectional view showing an example of a processing unit. [Figure 3] Figure 3 shows a nozzle according to the first example. [Figure 4] Figure 4 shows a nozzle related to the second example. [Figure 5] Figure 5 is a flowchart showing the substrate processing method according to the embodiment. [Figure 6] Figure 6 shows the pressure changes in each process. [Figure 7] Figure 7 is Figure (1), which shows the analysis results of the flow of the processed fluid. [Figure 8] Figure 8 is Figure (2), which shows the analysis results of the flow of the processed fluid. [Modes for carrying out the invention]

[0008] Hereinafter, exemplary embodiments of the present disclosure, not limited to those described herein, will be described with reference to the attached drawings. In all attached drawings, identical or corresponding members or components are denoted by the same or corresponding reference numerals, and redundant descriptions are omitted.

[0009] In the following explanation, the XYZ Cartesian coordinate system is used, but this coordinate system is defined for illustrative purposes only and is not limited to the orientation of the substrate processing device. The view from the XY plane is referred to as the plan view, and from any point, the positive Z-axis side may be referred to as "up," and the negative Z-axis side may be referred to as "down."

[0010] [Substrate Processing Equipment] Referring to Figure 1, the substrate processing apparatus 1 according to the embodiment will be described. Figure 1 is a schematic diagram showing the substrate processing apparatus 1 according to the embodiment.

[0011] The substrate processing apparatus 1 is a device that dries liquids such as isopropyl alcohol (IPA) adhering to a substrate W using a processing fluid in a supercritical state. The substrate processing apparatus 1 comprises a processing unit 2, a fluid supply system 3, a discharge unit 4, and a control circuit 5.

[0012] The processing unit 2 includes a processing container 110 and a holding unit 120. The processing container 110 is a container with a processing space formed inside that can accommodate a substrate W. The substrate W may be, for example, a semiconductor wafer. The holding unit 120 is provided inside the processing container 110. The holding unit 120 holds the substrate W in a horizontal position at a holding position inside the processing container 110. The processing unit 2 may also include a pressure sensor for detecting the pressure inside the processing container 110 and a temperature sensor for detecting the temperature inside the processing container 110. Details of the processing unit 2 will be described later.

[0013] The fluid supply system 3 has a supply channel L11. The supply channel L11 is connected to the processing container 110. The supply channel L11 supplies fluid into the processing container 110. The supply channel L11 is provided with a fluid supply source S11, an on-off valve V11, a heating mechanism HE11, an on-off valve V12, and a filter F11 in that order from upstream. The supply channel L11 may also be provided with an orifice, on-off valves, a temperature sensor, a pressure sensor, a line heater, etc. (not shown).

[0014] The fluid supply source S11 includes a fluid supply source. The fluid includes, for example, a processing fluid. The processing fluid may be, for example, carbon dioxide (CO2). The fluid may also include an inert gas. The inert gas may be, for example, nitrogen (N2) gas.

[0015] The on-off valve V11 is a valve that switches the fluid flow on and off. When the on-off valve V11 is open, it allows fluid to flow to the downstream heating mechanism HE11, and when it is closed, it does not allow fluid to flow to the downstream heating mechanism HE11.

[0016] The heating mechanism HE11 heats the fluid to a set temperature and supplies the fluid at the set temperature downstream. The heating mechanism HE11 may include a heater.

[0017] The on-off valve V12 is a valve that switches the on and off of the fluid flow. In the open state, the on-off valve V12 allows the fluid to flow to the downstream filter F11, and in the closed state, it does not allow the fluid to flow to the downstream filter F11.

[0018] The filter F11 filters the fluid flowing through the supply channel L11 and removes foreign substances contained in the fluid. Thereby, it is possible to suppress the generation of particles on the surface of the substrate W during substrate processing using the fluid.

[0019] The discharge section 4 has a discharge channel L12. The discharge channel L12 is connected to the processing vessel 110. The discharge channel L12 discharges the fluid from inside the processing vessel 110. A flow meter FM11, a back pressure valve BV11, and an on-off valve V13 are provided in the discharge channel L12 in this order from the upstream. An on-off valve, a temperature sensor, a pressure sensor, a line heater, etc. (not shown) may be provided in the discharge channel L12.

[0020] The flow meter FM11 detects the flow rate of the fluid flowing through the discharge channel L12. The flow meter FM11 is, for example, a mass flow meter.

[0021] When the primary side pressure in the discharge channel L12 exceeds the set pressure, the back pressure valve BV11 adjusts the valve opening degree and allows the fluid to flow to the secondary side, thereby maintaining the primary side pressure at the set pressure. For example, the set pressure of the back pressure valve BV11 is adjusted based on the output of the flow meter FM11 by the control circuit 5.

[0022] The on-off valve V13 is a valve that switches the on and off of the fluid flow. In the open state, the on-off valve V13 allows the fluid to flow to the downstream discharge channel L12, and in the closed state, it does not allow the fluid to flow to the downstream discharge channel L12.

[0023] The control circuit 5 receives measurement signals from various sensors and transmits control signals to various functional elements. The measurement signals include, for example, detection signals from the temperature sensor, detection signals from the pressure sensor, and detection signals from the flow meter FM11. The control signals include, for example, opening and closing signals from the on-off valves V11, V12, and V13, and the set pressure signal from the back pressure valve BV11.

[0024] The control circuit 5 is, for example, a computer. The control circuit 5 comprises an arithmetic unit 5a such as a CPU (Central Processing Unit) and a storage unit 5b such as memory. The storage unit 5b stores programs that control various processes performed in the substrate processing device 1. The control circuit 5 controls the operation of the substrate processing device 1 by causing the arithmetic unit 5a to execute the programs stored in the storage unit 5b.

[0025] The control circuit 5 includes an electronic circuit such as a CPU, FPGA (Field Programmable Gate Array), or ASIC (Application Specific Integrated Circuit), and performs various control operations described in this specification by executing instruction codes stored in memory or by designing the circuit for special applications.

[0026] [Processing Section] Referring to Figure 2, an example of the processing unit 2 will be described. Figure 2 is a horizontal cross-sectional view showing an example of the processing unit 2.

[0027] The processing unit 2 includes a processing container 110, a holding unit 120, a fluid supply unit 130, a lid 140, and a fluid discharge unit 150.

[0028] The processing container 110 forms a processing space S1 inside which a substrate W can be accommodated. The processing space S1 is covered and partitioned from the outside by the processing container 110. Both ends of the processing space S1 (the positive Y-axis end and the negative Y-axis end) are open and not covered by the processing container 110. The openings at both ends of the processing space S1 face each other. The openings at both ends of the processing space S1 are positioned to sandwich the substrate W held in the holding position. The processing container 110 has a first surface 110s that surrounds the opening on the positive Y-axis side of the processing space S1.

[0029] The holding unit 120 is provided inside the processing container 110. The holding unit 120 holds the substrate W in a horizontal position in the holding position inside the processing container 110.

[0030] The fluid supply unit 130 includes a supply body 131 and a nozzle 132.

[0031] The supply body 131 covers the opening on the positive Y-axis side of the processing space S1. The supply body 131 is made of, for example, stainless steel. The supply body 131 has a second surface 131s that faces the first surface 110s of the processing container 110. A seal groove 161 is provided on the second surface 131s of the supply body 131. The seal groove 161 surrounds the opening on the positive Y-axis side of the processing space S1. The seal groove 161 communicates with the processing space S1 through a gap G1 (see Figure 3) between the first surface 110s and the second surface 131s. The seal groove 161 may be provided between the first surface 110s and the second surface 131s, or it may be provided on the first surface 110s. A seal member 162 is provided in the seal groove 161. The seal member 162 seals the gap G1 between the first surface 110s and the second surface 131s. This ensures that the processing space S1 remains airtight. For example, the sealing member 162 is an O-ring.

[0032] The supply body 131 has a recess 131a, an internal flow path 131b, and a plurality of discharge ports 131c.

[0033] The recess 131a is provided on the processing space S1 side of the supply body 131. The recess 131a forms a supply space S2 that communicates with the processing space S1.

[0034] The internal channel 131b is provided within the supply body 131. The internal channel 131b extends along the X-axis. The openings at both ends of the internal channel 131b are connected to the first branch channel L11a and the second branch channel L11b, which are branched from the supply channel L11, respectively. The processing fluid F is supplied to the internal channel 131b from the first branch channel L11a and the second branch channel L11b.

[0035] Multiple discharge ports 131c are arranged in a line along the internal flow path 131b. Each discharge port 131c connects the internal flow path 131b to the supply space S2. Each discharge port 131c is located radially outward of the substrate W held in the holding position. Each discharge port 131c discharges the processing fluid F toward the supply space S2. Multiple discharge ports 131c may be distributed along the X-axis over the entire area of ​​the substrate W held in the holding position. Multiple discharge ports 131c may be arranged in multiple stages along the Z-axis.

[0036] The nozzle 132 is provided, for example, in the supply space S2. The nozzle 132 may also be provided in the processing space S1. The nozzle 132 may be provided across both the processing space S1 and the supply space S2. The nozzle 132 is provided, for example, between a substrate W held in a holding position and a plurality of discharge ports 131c. The nozzle 132 may be detachably attached to the supply body 131. In this case, the nozzle 132 can be easily replaced. Details of the nozzle 132 will be described later.

[0037] The lid 140 covers the opening on the negative Y-axis side of the processing space S1. A sealing member (not shown) is provided between the lid 140 and the processing container 110. The sealing member seals the gap between the lid 140 and the processing container 110. This maintains an airtight seal in the processing space S1.

[0038] The fluid discharge section 150 is provided on the negative Y-axis side of the processing space S1. The fluid discharge section 150 has a plurality of discharge ports 151. The plurality of discharge ports 151 open toward, for example, the lid 140. In this case, the processing fluid flows to the negative Y-axis end of the processing space S1, making it easy to form a laminar flow near the upper surface of the substrate W. The plurality of discharge ports 151 may open toward the nozzle 132. The plurality of discharge ports 151 may open toward the positive Z-axis side. The plurality of discharge ports 151 are arranged in a line along the X-axis. The plurality of discharge ports 151 may be distributed over the entire area of ​​the substrate W held in a holding position along the X-axis. The plurality of discharge ports 151 may be arranged in multiple stages along the Z-axis. The plurality of discharge ports 151 are connected to the discharge channel L12. The processing fluid F in the processing space S1 is sucked in and discharged from the discharge ports 151.

[0039] 〔nozzle〕 (Example 1) Referring to Figure 3, the nozzle 210 according to the first example will be described. The nozzle 210 can be applied as the nozzle 132 described above. Figure 3 is a diagram showing the nozzle 210 according to the first example. Figure 3 corresponds to a cross-sectional view along line AA in Figure 2. In Figure 3, the holding part 120 is not shown.

[0040] The nozzle 210 is provided in the supply space S2. The nozzle 210 extends along the X-axis. In a vertical cross-section perpendicular to the X-axis, the nozzle 210 has a V-shape with its apex on the negative Y-axis side. The nozzle 210 has a first discharge section 211 and a second discharge section 212. The first discharge section 211 and the second discharge section 212 are formed, for example, from a single seamless member. The first discharge section 211 and the second discharge section 212 are formed, for example, by processing a plate-shaped member. The first discharge section 211 and the second discharge section 212 may be formed by joining separate members.

[0041] The first discharge section 211 is inclined upward from the negative Y-axis side to the positive Y-axis side. The first discharge section 211 is provided with a plurality of first holes 211h through which the processing fluid can flow. The plurality of first holes 211h are arranged in a line along the X-axis. Each first hole 211h may be arranged at a position offset in the X-axis direction from each discharge port 131c. In this case, even if there is a difference in the flow velocity distribution in the X-axis direction at the plurality of discharge ports 131c, the processing fluid can be flowed uniformly in the X-axis direction without being affected by the flow velocity distribution. The plurality of first holes 211h are arranged in a line along the inclined surface of the first discharge section 211. Each first hole 211h may be configured to discharge the processing fluid in a direction inclined with respect to the horizontal direction. For example, each first hole 211h is formed along the plate thickness direction of the first discharge section 211 and is configured to discharge the processing fluid diagonally upward. In this case, the flow of the processing fluid toward the radial outer end of the substrate W can be reduced. Therefore, the amount of evaporation of the liquid film on the radial outer edge of the substrate W is reduced, and pattern collapse on the radial outer edge of the substrate W can be reduced. Each first hole 211h may be configured to discharge the processing fluid toward the gap G1 between the first surface 110s and the second surface 131s. In this case, the retention of the processing fluid in the seal groove 161 is reduced, and foreign matter such as IPA residue is less likely to remain in the seal groove 161.

[0042] The second discharge portion 212 inclines downward from the Y-axis negative side end of the first discharge portion 211 toward the Y-axis positive side. A plurality of second holes 212h through which the processing fluid can flow are provided in the second discharge portion 212. The plurality of second holes 212h are provided side by side along the X-axis. Each second hole 212h may be arranged at a position shifted in the X-axis direction with respect to each discharge port 131c. In this case, even if there is a difference in the flow velocity distribution in the X-axis direction among the plurality of discharge ports 131c, the processing fluid can flow uniformly in the X-axis direction without being affected by the flow velocity distribution. The plurality of second holes 212h are provided side by side along the inclined surface of the second discharge portion 212. Each second hole 212h may be configured to discharge the processing fluid in a direction inclined with respect to the horizontal direction. For example, each second hole 212h is formed along the plate thickness direction of the second discharge portion 212 and is configured to discharge the processing fluid obliquely downward. In this case, the flow of the processing fluid toward the radially outer end of the substrate W can be reduced. Therefore, the evaporation amount of the liquid film on the radially outer end of the substrate W is reduced, and pattern collapse on the radially outer end of the substrate W can be reduced. Each second hole 212h may be configured to discharge the processing fluid toward the gap G1 between the first surface 110s and the second surface 131s. In this case, the retention of the processing fluid in the seal groove 161 is reduced, and foreign substances such as IPA residues are less likely to remain in the seal groove 161.

[0043] In a vertical cross section orthogonal to the X-axis, the position P5 of the top of the nozzle 210 is below the position P6 of the Y-axis positive side end of the substrate W held at the holding position. In a state where the substrate W is held by the holding portion 120, the first distance Z1 between the first virtual surface Wa including the upper surface of the substrate W and the ceiling surface 110a of the processing container 110 is smaller than the second distance Z2 between the second virtual surface Wb including the lower surface of the substrate W and the bottom surface 110b of the processing container 110. That is, the first distance Z1 and the second distance Z2 satisfy the relationship Z1 < Z2. The ratio of the first distance Z1 to the second distance Z2 is, for example, within the range of 20:80 to 40:60.

[0044] The first discharge unit 211 is configured to discharge the processing fluid at a first discharge rate from a position above the first virtual surface Wa. The second discharge unit 212 is configured to discharge the processing fluid at a second discharge rate from a position below the second virtual surface Wb. The first discharge unit 211 and the second discharge unit 212 are configured to discharge the processing fluid such that the relative magnitudes of the first discharge rate and the second discharge rate match the relative magnitudes of the first distance Z1 and the second distance Z2. In the example in Figure 3, the first distance Z1 is smaller than the second distance Z2. Therefore, the first discharge unit 211 discharges the processing fluid at a first discharge rate less than the second discharge rate, and the second discharge unit 212 discharges the processing fluid at the second discharge rate. In this case, the airflow inside the processing container 110 is stabilized, and the uniformity of the airflow inside the processing container 110 can be improved. For example, by making the total area of ​​the multiple first holes 211h provided in the first discharge section 211 smaller than the total area of ​​the multiple second holes 212h provided in the second discharge section 212, the first discharge volume can be made smaller than the second discharge volume. For example, by making the number of multiple first holes 211h provided in the first discharge section 211 smaller than the number of multiple second holes 212h provided in the second discharge section 212, the first discharge volume can be made smaller than the second discharge volume. For example, by making the hole diameters of the multiple first holes 211h provided in the first discharge section 211 smaller than the hole diameters of the multiple second holes 212h provided in the second discharge section 212, the first discharge volume can be made smaller than the second discharge volume.

[0045] The ratio of the first discharge volume to the second discharge volume may be the same as the ratio of the first distance Z1 to the second distance Z2. In this case, the airflow inside the processing container 110 tends to be particularly stable.

[0046] The position P1 at the positive Y-axis end of the ceiling surface 110a of the processing container 110 may be lower than the position P2 at the negative Y-axis end of the ceiling surface of the recess 131a of the supply body 131. In this case, a portion of the first surface 110s connected to the ceiling surface 110a of the processing container 110 faces the supply space S2 without facing the second surface 131s. As a result, a portion of the processing fluid discharged from each first hole 211h collides with the first surface 110s facing the supply space S2 and is guided toward the gap G1 between the first surface 110s and the second surface 131s. Consequently, the stagnation of the processing fluid in the seal groove 161 is reduced, and foreign matter such as IPA residue is less likely to remain in the seal groove 161. The first surface 110s facing the supply space S2 is an example of a guide portion.

[0047] The position P3 at the positive Y-axis end of the bottom surface 110b of the processing container 110 may be above the position P4 at the negative Y-axis end of the bottom surface of the recess 131a of the supply body 131. In this case, a portion of the first surface 110s connected to the bottom surface 110b of the processing container 110 faces the supply space S2 without facing the second surface 131s. As a result, a portion of the processing fluid discharged from each first hole 211h collides with the first surface 110s facing the supply space S2 and is guided toward the gap G1 between the first surface 110s and the second surface 131s. Consequently, the stagnation of the processing fluid in the seal groove 161 is reduced, and foreign matter such as IPA residue is less likely to remain in the seal groove 161. The first surface 110s facing the supply space S2 is an example of a guide portion.

[0048] (Example 2) Referring to Figure 4, the nozzle 220 according to the second example will be described. The nozzle 220 can be applied as the nozzle 132 described above. Figure 4 is a diagram showing the nozzle 220 according to the second example. Figure 4 corresponds to a cross-sectional view along line AA in Figure 2. In Figure 4, the holding part 120 is not shown.

[0049] The nozzle 220 in the second example differs from the nozzle 210 in the first example in that, in a vertical cross-section perpendicular to the X-axis, the position P7 of the top of the nozzle 220 is at the same height as the position P8 of the edge of the substrate W held in the holding position. The following explanation will focus on the differences from the nozzle 210 in the first example.

[0050] The nozzle 220 has a first discharge section 221 and a second discharge section 222. The first discharge section 221 is inclined upward from the negative Y-axis side toward the positive Y-axis side. The first discharge section 221 is provided with a plurality of first holes 221h through which the processing fluid can flow. The second discharge section 222 is inclined downward from the negative Y-axis end of the first discharge section 221 toward the positive Y-axis side. The length of the second discharge section 222 along the Y-axis may be longer than the length of the first discharge section 221 along the Y-axis. The second discharge section 222 is provided with a plurality of second holes 222h through which the processing fluid can flow.

[0051] In a vertical cross-section perpendicular to the X-axis, the position P7 of the top of the nozzle 220 is at the same height as the position P8 of the edge of the substrate W held in the holding position.

[0052] The first discharge unit 221 is configured to discharge the processing fluid at a first discharge rate from a position above the first virtual surface Wa. The second discharge unit 222 is configured to discharge the processing fluid at a second discharge rate from a position below the second virtual surface Wb. The first discharge unit 221 and the second discharge unit 222 are configured to discharge the processing fluid such that the relative magnitudes of the first discharge rate and the second discharge rate match the relative magnitudes of the first distance Z1 and the second distance Z2. In the example in Figure 4, the first distance Z1 is smaller than the second distance Z2. Therefore, the first discharge unit 221 discharges the processing fluid at a first discharge rate less than the second discharge rate, and the second discharge unit 222 is configured to discharge the processing fluid at the second discharge rate. In this case, the airflow inside the processing container 110 is stabilized, and the uniformity of the airflow inside the processing container 110 can be improved. For example, by making the total area of ​​the multiple first holes 221h provided in the first discharge section 221 smaller than the total area of ​​the multiple second holes 222h provided in the second discharge section 222, the first discharge volume can be made smaller than the second discharge volume. For example, by making the number of multiple first holes 221h provided in the first discharge section 221 smaller than the number of multiple second holes 222h provided in the second discharge section 222, the first discharge volume can be made smaller than the second discharge volume. For example, by making the hole diameters of the multiple first holes 221h provided in the first discharge section 221 smaller than the hole diameters of the multiple second holes 222h provided in the second discharge section 222, the first discharge volume can be made smaller than the second discharge volume.

[0053] The ratio of the first discharge volume to the second discharge volume may be the same as the ratio of the first distance Z1 to the second distance Z2. In this case, the airflow inside the processing container 110 tends to be particularly stable.

[0054] [Substrate processing method] Referring to Figures 5 and 6, a substrate processing method performed using the substrate processing apparatus 1 will be described. The substrate processing method shown below is automatically executed under the control of the control circuit 5 based on the processing recipe and control program stored in the storage unit 5b. Figure 5 is a flowchart of the substrate processing method according to an embodiment. Figure 6 is a diagram showing the pressure changes in each step. In Figure 6, the horizontal axis represents time, and the vertical axis represents the pressure inside the processing container 110.

[0055] As shown in Figure 5, the substrate processing method according to this embodiment includes a preparation step ST1, a boost step ST2, a flow step ST3, and a depressurization step ST4.

[0056] In preparation step ST1, the substrate W is brought into the processing container 110. The substrate W is cleaned and placed on the holding unit 120 with IPA filling the recesses of the surface pattern.

[0057] The pressurization step ST2 is performed after the preparation step ST1. In the pressurization step ST2, valves V11 and V12 are opened, and valve V13 is closed. As a result, the processing fluid from the fluid supply source S11 is discharged into the processing container 110 from multiple discharge ports 131c of the fluid supply unit 130 via the supply channel L11. In the pressurization step ST2, since valve V13 is closed, no processing fluid flows out of the processing container 110. Therefore, as shown in Figure 6, the pressure inside the processing container 110 gradually increases. In the pressurization step ST2, the pressure of the processing fluid supplied into the processing container 110 is lower than the critical pressure. Therefore, the processing fluid is supplied into the processing container 110 in a gaseous state. Subsequently, as the filling of the processing fluid into the processing container 110 progresses, the pressure inside the processing container 110 increases, and when the pressure inside the processing container 110 exceeds the critical pressure, the processing fluid present in the processing container 110 changes from a gaseous state to a supercritical state. In the pressurization process ST2, when the pressure inside the processing container 110 reaches a predetermined pressure higher than the critical pressure, the pressurization process ST2 is terminated and the process moves to the flow process ST3.

[0058] The flow process ST3 is performed after the pressurization process ST2. In the flow process ST3, the on-off valves V11, V12, and V13 are opened. As a result, the processing fluid from the fluid supply source S11 is discharged into the processing container 110 from multiple discharge ports 131c of the fluid supply unit 130 via the supply channel L11. The processing fluid supplied into the processing container 110 is discharged from the processing container 110 via the discharge channel L12. In the flow process ST3, the supply of processing fluid into the processing container 110 and the discharge of processing fluid from the processing container 110 occur simultaneously. Therefore, as shown in Figure 6, the pressure inside the processing container 110 is maintained at a constant or approximately constant level. By performing the flow process ST3, the replacement of IPA with processing fluid in the recesses of the pattern on the substrate W is promoted. Once the replacement of IPA with processing fluid in the recesses of the pattern is complete, the flow process ST3 is terminated and the process moves to the depressurization process ST4.

[0059] The depressurization process ST4 is performed after the flow process ST3. In the depressurization process ST4, valve V13 is opened and valves V11 and V12 are closed. As a result, no processing fluid is supplied into the processing container 110, and the processing fluid is discharged from the processing container 110. Therefore, as shown in Figure 6, the pressure inside the processing container 110 gradually decreases. When the pressure inside the processing container 110 falls below the critical pressure of the processing fluid due to the depressurization process ST4, the supercritical processing fluid vaporizes and separates from the recesses of the pattern. This completes the drying process for one substrate W.

[0060] In this embodiment, during the pressurization step ST2 and the flow step ST3, the nozzles 132 (nozzles 210 and 220) discharge the processing fluid such that the relative magnitudes of the first discharge volume and the second discharge volume match the relative magnitudes of the first distance Z1 and the second distance Z2. In this case, the airflow inside the processing container 110 is stabilized, thereby improving the uniformity of the airflow inside the processing container 110.

[0061] [Analysis results] Referring to Figures 7 and 8, the flow of the processing fluid was simulated when the processing fluid was supplied to the inside of the processing container from the side of the container using nozzles with different ratios of first discharge volume to second discharge volume. In the simulation, the ratio of the first distance Z1 to the second distance Z2 was set to 1:2. Figures 7 and 8 show the results of the processing fluid flow analysis. In Figures 7 and 8, the direction of the processing fluid flow near the positive Y-axis end of the substrate W is indicated by a black arrow.

[0062] Figure 7 shows the flow of the processed fluid when the ratio of the first discharge rate to the second discharge rate is 1:2, that is, when the relative magnitudes of the first and second discharge rates coincide with the relative magnitudes of the first distance Z1 and the second distance Z2. As shown in Figure 7, it can be seen that there is almost no inflow of processed fluid from a position above the first virtual surface Wa to a position below the second virtual surface Wb, and there is almost no inflow of processed fluid from a position below the second virtual surface Wb to a position above the first virtual surface Wa.

[0063] Figure 8 shows the flow of the processed fluid when the ratio of the first discharge rate to the second discharge rate is 1:1, that is, when the relative magnitudes of the first and second discharge rates do not match the relative magnitudes of the first distance Z1 and the second distance Z2. As shown in Figure 8, the flow rate of the processed fluid discharged from a position above the first virtual surface Wa is large, so it can be seen that the processed fluid flows from a position above the first virtual surface Wa toward a position below the second virtual surface Wb.

[0064] From the above results, it is considered that when the relative magnitudes of the first discharge rate and the second discharge rate match the relative magnitudes of the first distance Z1 and the second distance Z2, the airflow inside the processing container 110 becomes stable, and thus the uniformity of the airflow inside the processing container 110 can be improved.

[0065] The embodiments disclosed herein should be considered in all respects to be illustrative and not restrictive. The above embodiments may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims. [Explanation of Symbols]

[0066] 1. Substrate processing device 110 Processing container 110a Ceiling surface 110b Bottom 120 Holding part 130 Fluid supply section 132 nozzles 210 nozzles 211 1st discharge part 211h 1st hole 212 2nd discharge part 212h 2nd hole 220 nozzles 221 1st discharge part 221h 1st hole 222 2nd discharge part 222h 2nd hole W board Wa 1st Virtual Face Wb Second Virtual Surface Z1 1st distance Z2 2nd distance

Claims

1. Processing container and A holding part that holds the substrate in a horizontal position in the holding position within the processing container, A fluid supply unit that supplies processing fluid into the processing container from the side of the processing container, It has, In a state in which the substrate is held in the holding portion, the first distance between a first virtual plane including the upper surface of the substrate and the ceiling surface of the processing container and the second distance between a second virtual plane including the lower surface of the substrate and the bottom surface of the processing container are different. The fluid supply unit has a nozzle that changes the flow of the processing fluid, The aforementioned nozzle is A first discharge unit that discharges the processing fluid at a first discharge rate from a position above the first virtual plane, A second discharge unit that discharges the processing fluid at a second discharge rate from a position below the second virtual plane, It has, The relationship between the first discharge rate and the second discharge rate is the same as the relationship between the first distance and the second distance. Circuit board processing equipment.

2. The first distance is smaller than the second distance. The substrate processing apparatus according to claim 1.

3. The first discharge section has a plurality of first holes, The second discharge section has a plurality of second holes, The total area of ​​the multiple first holes is smaller than the total area of ​​the multiple second holes. The substrate processing apparatus according to claim 2.

4. The number of the multiple first holes is less than the number of the multiple second holes. The substrate processing apparatus according to claim 3.

5. The nozzle has a V-shape in a vertical cross-section, with its apex facing the substrate. When the substrate is held in the holding portion, the position of the top of the nozzle is lower than the position of the end of the substrate on the nozzle side. The substrate processing apparatus according to claim 1.

6. The nozzle has a V-shape in a vertical cross-section, with its apex facing the substrate. When the substrate is held in the holding portion, the position of the top of the nozzle is at the same height as the position of the end of the substrate on the nozzle side. The substrate processing apparatus according to claim 1.

7. The processing fluid is in a supercritical state or a gaseous state. The substrate processing apparatus according to claim 1.

8. The processing container has an opening at its end, The fluid supply unit has a supply body that covers the opening, The nozzle is attached to the supply body, A substrate processing apparatus according to any one of claims 1 to 7.

9. The processing container has a first surface that surrounds the opening and faces the supply body, The supply body has a second surface facing the first surface, A sealing member provided between the first surface and the second surface, which seals the gap between the first surface and the second surface, A guide unit that guides the processing fluid discharged from the nozzle toward the gap, Having, The substrate processing apparatus according to claim 8.

10. A substrate processing method using a substrate processing apparatus, The substrate processing apparatus is Processing container and A holding part that holds the substrate in a horizontal position in the holding position within the processing container, A fluid supply unit that supplies processing fluid into the processing container from the side of the processing container, It has, In a state in which the substrate is held in the holding portion, the first distance between a first virtual plane including the upper surface of the substrate and the ceiling surface of the processing container and the second distance between a second virtual plane including the lower surface of the substrate and the bottom surface of the processing container are different. The fluid supply unit has a nozzle that changes the flow of the processing fluid, The aforementioned nozzle is A first discharge unit that discharges the processing fluid at a first discharge rate from a position above the first virtual plane, A second discharge unit that discharges the processing fluid at a second discharge rate from a position below the second virtual plane, It has, The fluid supply unit includes supplying the processing fluid into the processing container by changing the flow of the processing fluid using the nozzle so that the relative magnitudes of the first discharge amount and the second discharge amount match the relative magnitudes of the first distance and the second distance. Substrate processing method.

Images