Substrate manufacturing method and substrate manufacturing apparatus

Abstract

The system determines the machining status of the workpiece independently of the operator's judgment and performs appropriate machining operations. [Solution] A method for manufacturing a substrate from an ingot 100 to produce a wafer, comprising: a grinding step of grinding the surface 100a of an ingot 100 having a surface 100a and a back surface 100b; a delamination layer forming step S13 of positioning the focal point of a laser beam with a penetrating wavelength at a position deeper than the surface 100a of the ingot 100 and irradiating the surface 100a of the ingot 100 with the laser beam to form a delamination layer S; a delamination step S14 of delaminating the wafer from the delamination layer S; a detection step S10 of detecting the processing state of the ingot 100; and a determination step S11 of determining the next processing step to be performed based on the information obtained in the detection step S10.

Description

Technical Field

[0001] The present invention relates to a method for manufacturing a substrate for manufacturing a substrate from a workpiece, and a substrate manufacturing apparatus.

Background Art

[0002] Conventionally, an apparatus for generating a wafer from an ingot as a workpiece has been known (for example, Patent Document 1). This apparatus includes a grinding unit for grinding the surface of the ingot, a laser irradiation unit for irradiating a laser beam inside the ingot to form a peeling layer, a peeling unit for peeling the wafer from the peeling layer, a tray for supporting the ingot, and a belt conveyor for transporting the ingot supported by the tray between the units.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] In the apparatus described in Patent Document 1, a series of operations for generating a wafer from an ingot can be performed. However, the processing states of the ingots set in this apparatus vary, and it is necessary to input the processing state to the apparatus based on the judgment of the operator. Therefore, for example, when the operator makes an input error or misjudges the processing state, there are problems such as processing defects occurring or the apparatus stopping due to an error.

[0005] The present invention provides a method for manufacturing a substrate and a substrate manufacturing apparatus capable of determining the processing state of a workpiece without depending on the judgment of an operator and performing appropriate processing.

Means for Solving the Problems

[0006] One aspect of the present invention is, A method for manufacturing a substrate from a workpiece, A grinding step of grinding the first surface of a workpiece having a first surface and a second surface opposite to the first surface, A peel layer forming step involves positioning the focal point of a laser beam with a penetrating wavelength at a position deeper than the first surface of the workpiece, and irradiating the workpiece with the laser beam from the first surface to form a peel layer, A peeling step of peeling the substrate from the peeling layer, A detection step for detecting the processing state of the workpiece, The system includes a determination step that determines the next processing step to be performed based on the information acquired in the detection step.

[0007] Furthermore, other embodiments of the present invention include: A substrate manufacturing apparatus for manufacturing a substrate from a workpiece, A grinding unit that grinds and flattens the surface of the workpiece held on the first holding table, A laser irradiation unit that positions the focal point of a laser beam with a penetrating wavelength at a position deeper than the surface of the workpiece held on a second holding table, and irradiates the workpiece with the laser beam to form a peel layer, A peeling unit that holds the surface of the workpiece held on a third holding table and peels the substrate from the peeling layer, A tray capable of supporting the workpiece and the peeled substrate, A belt conveyor transports the workpiece supported on the tray between the grinding unit, the laser irradiation unit, and the peeling unit. A loading unit that loads the workpiece supported on the tray onto the belt conveyor, A detection unit for detecting the processing state of the workpiece, It includes a control unit, The aforementioned detection unit is provided adjacent to the aforementioned loading unit, The control unit is Based on the detection results of the detection unit, the destination for transporting the workpiece is determined from among the grinding unit, the laser irradiation unit, and the peeling unit. [Effects of the Invention]

[0008] According to the present invention, the processing state of a workpiece can be determined without the operator's judgment, and appropriate processing can be performed. [Brief explanation of the drawing]

[0009] [Figure 1] Figure 1 is a perspective view showing an example of a substrate manufacturing apparatus 1. [Figure 2] Figure 2 is a perspective view showing an example of the grinding mechanism 21. [Figure 3] Figure 3 is a diagram illustrating an example of a laser beam irradiation mechanism 41. [Figure 4] Figure 4 shows an example of a situation where a laser beam is irradiated from the surface 100a of the ingot 100. [Figure 5] Figure 5 is a diagram illustrating a modified example of the laser beam irradiation mechanism 41. [Figure 6] Figure 6 is a diagram illustrating an example of a peeling device 56. [Figure 7] Figure 7 is a diagram illustrating a modified example of the peeling device 56. [Figure 8] Figure 8 is a cross-sectional view showing an example of the processing state of ingot 100. [Figure 9] Figure 9 is a diagram illustrating the placement of the detection unit 9. [Figure 10] Figure 10 is a perspective view illustrating an example of a detection unit 9. [Figure 11] Figure 11 illustrates an example of detecting the processing state by irradiating the surface 100a of the ingot 100 with light. [Figure 12] Figure 12 illustrates an example of detecting the processing state by irradiating the release layer S with light. [Figure 13] FIG. 13 is a flowchart for explaining an example of the manufacturing method in the embodiment. [Figure 14] FIG. 14 is a diagram for explaining an example of the captured image captured by the detection unit 9. [Figure 15] FIG. 15 is a flowchart for explaining a modified example of the manufacturing method.

BEST MODE FOR CARRYING OUT THE INVENTION

[0010] Hereinafter, a method for manufacturing a substrate and a substrate manufacturing apparatus according to an embodiment of the present invention will be described with reference to the drawings.

[0011] First, the configuration of the substrate manufacturing apparatus 1 used for manufacturing the substrate will be described. In the following description, the X-axis direction is one direction in the horizontal plane. The Y-axis direction is a direction in the horizontal plane that is orthogonal to the X-axis direction. The Z-axis direction is a direction orthogonal to the X-axis direction and the Y-axis direction.

[0012] FIG. 1 is a perspective view showing an example of a substrate manufacturing apparatus 1 (hereinafter simply referred to as the manufacturing apparatus 1) in the embodiment. The manufacturing apparatus 1 mainly performs a grinding process for grinding the surface 100a (see FIG. 2) of an ingot 100 which is an example of a workpiece, a peeling layer forming process for forming a peeling layer S inside the ingot 100 by a laser beam, and a peeling process for peeling a wafer which is an example of a substrate from the peeling layer S. That is, the manufacturing apparatus 1 can perform these processes as a series of processes.

[0013] The manufacturing apparatus 1 shown in FIG. 1 includes, as main components, a grinding unit 2 for grinding the surface 100a of the ingot 100, a laser irradiation unit 4 for irradiating a laser beam inside the ingot 100, a peeling unit 5 for peeling a wafer from the ingot 100, a tray 6 for supporting the ingot 100 and the wafer, a belt conveyor 7 for transporting the ingot 100 supported by the tray 6 between the units, a detection unit 9, and a control unit 10 for controlling the manufacturing apparatus 1.

[0014] The grinding unit 2 includes a circular first holding table 20 for holding the ingot 100, and a grinding mechanism 21 for grinding and flattening the surface 100a of the ingot 100 held on the first holding table 20.

[0015] The first holding table 20 is positioned on a circular turntable 23 that is rotatably mounted on the upper surface of the base 22. In the example shown in Figure 1, two first holding tables 20 are provided symmetrically with respect to the rotation center of the turntable 23. The first holding table 20 is alternately positioned between a grinding position where grinding is performed by the grinding mechanism 21 and a loading / unloading position for loading and unloading the ingot 100, as the turntable 23 rotates. The first holding table 20 is also configured to rotate around an axis parallel to the Z-axis direction by a rotation drive source (not shown) provided on the lower surface of the turntable 23. Furthermore, a holding surface 20a (see Figure 2) is formed on the upper surface of the first holding table 20, for example, by a porous material to attract and hold the ingot 100.

[0016] The grinding mechanism 21 includes a gate-shaped support frame 25 that includes a pair of support columns extending upward from the base 22. Between the pair of support columns is a lifting plate 26 that is movable in the Z-axis direction, and a spindle housing 27 is supported on the lifting plate 26 so as to be movable in the Z-axis direction together with the lifting plate 26. A pair of lifting motors 28 for moving the spindle housing 27 in the Z-axis direction is provided on the upper surface of the support frame 25. The lifting motors 28 are connected to the ends of a ball screw (not shown) that extends in the Z-axis direction, and when the ball screw is rotated by the lifting motors 28, the lifting plate 26 moves in the Z-axis direction and the spindle housing 27 is raised and lowered.

[0017] As shown in Figure 2, the spindle housing 27 is provided with a cylindrical spindle 29 positioned almost perpendicular to the holding surface 20a of the first holding table 20. This spindle 29 is rotated in a direction roughly parallel to the Z-axis direction by a spindle motor (not shown) built into the spindle housing 27. A disc-shaped wheel mount 30 is fixed to the lower end of the spindle 29, and a grinding wheel 31 is fixed to the lower end of the wheel mount 30. The grinding wheel 31 has, for example, an annular wheel base 32 made of a metal material such as stainless steel or aluminum, and a plurality of grinding wheels 33 arranged in an annular pattern on the lower surface of the wheel base 32. The grinding wheels 33 include, for example, a binder made of ceramics, resin, metal material, etc., and countless abrasive grains such as diamond dispersed and fixed in the binder.

[0018] In addition, grinding unit 2 may perform finish grinding after rough grinding the surface 100a of the ingot 100. In that case, as shown in the example manufacturing apparatus 1 in Figure 1, rough grinding and finish grinding may be performed by a single grinding unit 2, for example by changing the grinding wheel, or a grinding unit having a grinding wheel for rough grinding and a grinding unit having a grinding wheel for finish grinding may be arranged side by side.

[0019] As shown in Figure 1, the laser irradiation unit 4 is positioned adjacent to the grinding unit 2. The laser irradiation unit 4 includes a circular second holding table 40 for holding the ingot 100, and a laser beam irradiation mechanism 41 that positions the focal point of a laser beam with a penetrating wavelength at a position deeper than the surface 100a of the ingot 100 held on the second holding table 40, and irradiates the ingot 100 with the laser beam to form a peeled layer S.

[0020] The second holding table 40 is provided in a recess 42a extending in the X-axis direction formed on the upper surface of the base 42, and is configured to be movable in the X-axis direction. Movement in the X-axis direction may be achieved, for example, by a known ball screw type moving mechanism (not shown). The second holding table 40 is also configured to be rotatable around an axis parallel to the Z-axis direction by a rotational drive source (not shown) provided on the lower surface of the second holding table 40. A holding surface 40a (see Figure 4) for suction holding the ingot 100 is formed on the upper surface of the second holding table 40, for example, by a porous material.

[0021] The laser beam irradiation mechanism 41 includes a gate-shaped support frame 43 extending upward from the base 42, and a casing 44 supported inside the support frame 43. Figure 3 is a diagram illustrating the laser beam irradiation mechanism 41 in the laser irradiation unit 4. As shown in Figure 3, the laser beam irradiation mechanism 41 consists of a laser beam generation unit 45 built into the casing 44 and a light concentrator 46 attached to the lower end of the casing 44. An imaging unit 47 having a microscope and a camera is also attached to the lower end of the casing 44, adjacent to the light concentrator 46. The imaging sensor of the imaging unit 47 is, for example, a CCD (Charge-Coupled Device) image sensor or a CMOS (Complementary Metal Oxide Semiconductor) image sensor. The imaging unit 47 acquires an image for, for example, aligning the ingot 100 with the laser beam irradiation mechanism 41, and outputs it as image data to the control unit 10.

[0022] The laser beam generation unit 45 includes, for example, a laser oscillator 45a that emits a YAG laser or a YVO4 laser, and an output adjustment unit 45b. Although not specifically shown, the laser oscillator 45a has a Brewster window, and the laser beam emitted from the laser oscillator 45a is a linearly polarized laser beam.

[0023] The laser beam, adjusted to a predetermined power by the output adjustment unit 45b of the laser beam generation unit 45, is reflected by the mirror 48 of the concentrator 46, and then the focusing point is positioned by the focusing lens 49 and irradiated into the ingot 100, which is the workpiece held on the second holding table 40.

[0024] Here, the ingot 100 in the embodiment will be described. The material of the ingot 100 is not particularly limited, and for example, it may be a SiC single crystal ingot or a GaN single crystal ingot. The ingot 100 is not limited to a single crystal ingot, but may also be a polycrystalline ingot. The ingot 100 has a surface 100a and a back surface 100b opposite to the surface 100a. The surface 100a of the ingot 100 is polished to a mirror surface because it is the irradiation surface of the laser beam. The thickness of the ingot 100 is, for example, 0.35 mm to 100 mm. In this embodiment, the surface 100a of the ingot 100 is an example of the first surface of the ingot 100, and the back surface 100b of the ingot 100 is an example of the second surface of the ingot 100.

[0025] Figure 4 shows the state in which a laser beam is irradiated from the surface 100a of the ingot 100 by the light concentrator 46. As shown in Figures 3 and 4, the laser beam irradiation mechanism 41 irradiates the surface 100a of the ingot 100 with a laser beam, thereby forming multiple delamination layers S inside the ingot 100. Since the delamination layers S are formed inside the ingot 100, they do not normally appear on the surface 100a of the ingot 100. However, in the example in Figure 4, for the sake of explanation, the delamination layers S are shown with dashed lines.

[0026] Furthermore, the laser beam irradiation mechanism 41 in the laser irradiation unit 4 is not limited to the configuration shown in Figure 3, but may also have the configuration shown in Figure 5, for example. Figure 5 is a diagram illustrating a modified laser beam irradiation mechanism 41. In the modified laser beam irradiation mechanism 41 shown in Figure 5, the laser beam generation unit 45 has a branching unit 45c in addition to the laser oscillator 45a and the output adjustment unit 45b. The branching unit 45c branches the laser beam, whose output has been adjusted by the output adjustment unit 45b, into multiple beams (for example, 5 beams) at predetermined intervals in a predetermined direction in the XY plane on the surface of the ingot 100. By branching into multiple beams in this way, multiple peel layers S can be formed in a single processing feed.

[0027] Furthermore, as shown in Figure 5, the light concentrator 46 may be provided with a vertical movement unit UD. The vertical movement unit UD is configured to move the position of the focusing lens 49 in the Z-axis direction. Therefore, by moving the position of the focusing lens 49 upward using the vertical movement unit, the focusing point inside the ingot 100 can be moved to the surface 100a side, and by moving the position of the focusing lens 49 downward, the focusing point inside the ingot 100 can be moved to the back surface 100b side. In other words, by controlling the vertical movement unit UD, the focusing point inside the ingot 100 of the laser beam emitted from the laser oscillator 45a can be changed.

[0028] As shown in Figure 1, the peeling unit 5 is positioned adjacent to the laser irradiation unit 4. The peeling unit 5 includes a circular third holding table 50 for holding the ingot 100, and a wafer peeling mechanism 51 for holding the upper surface of the ingot 100 held on the third holding table 50 and peeling the wafer from the peeling layer S.

[0029] The third holding table 50 is provided in a recess 52a extending in the X-axis direction formed on the upper surface of the base 52, and is configured to be movable in the X-axis direction. Movement in the X-axis direction may be achieved, for example, by a known ball screw type moving mechanism (not shown). The third holding table 50 is also configured to be rotatable around an axis parallel to the Z-axis direction by a rotational drive source (not shown) provided on the lower surface of the third holding table 50. A holding surface 50a (see Figure 6) for suction holding the ingot 100 is formed on the upper surface of the third holding table 50, for example, by a porous material.

[0030] The wafer peeling mechanism 51 includes a gate-shaped support frame 53 extending upward from a base 52, a casing 54 supported inside the support frame 53, an arm 55 partially housed within the casing 54 and supported to be vertically movable in the Z-axis direction, and a peeling device 56 connected to the arm 55. Figure 6 is a diagram illustrating the peeling device 56. As shown in Figure 6, the peeling device 56 includes an ultrasonic transducer 57 positioned opposite the surface 100a of the ingot 100 held on the third holding table 50 and applying ultrasonic waves to the ingot 100, a liquid supply nozzle 58 for supplying liquid (e.g., pure water) between the surface 100a of the ingot 100 and the ultrasonic transducer 57, and a transducer lifting mechanism 59 for adjusting the vertical position of the ultrasonic transducer 57.

[0031] The ultrasonic transducer 57 is positioned by the transducer lifting mechanism 59 to create a small gap between it and the surface 100a of the ingot 100. The liquid supply nozzle 58 continuously supplies liquid to the gap between the ultrasonic transducer 57 and the surface 100a of the ingot 100 while ultrasonic waves are applied to the ingot 100, forming a liquid layer WL. The ultrasonic waves irradiated from the ultrasonic transducer 57 are transmitted to the ingot 100 via the liquid layer WL, causing cracks in the delamination layer S formed on the ingot 100 to extend. This reduces the strength of the delamination layer S. After ultrasonic waves are applied to the surface 100a of the ingot 100, the surface 100a of the ingot 100 is attracted to a suction pad (not shown), and the suction pad is moved upward, allowing the thin plate including the surface 100a of the ingot 100 to be peeled off as a wafer, starting from the delamination layer S.

[0032] The configuration of the peeling apparatus 56 is not limited to the configuration shown in Figure 6, but may also be the configuration shown in Figure 7, for example. Figure 7 is a diagram illustrating a modified peeling apparatus 56. The modified peeling apparatus 56 has a water tank WT in which liquid is stored, and an ultrasonic transducer 57 and an ingot 100 are placed in the liquid. That is, the ultrasonic waves irradiated from the ultrasonic transducer 57 are applied to the ingot 100 via the liquid stored in the water tank WT. Even with such a configuration, the wafer can be peeled from the ingot 100 starting from the peeling layer S.

[0033] The tray 6 is a housing capable of supporting ingots 100 and wafers, and has recesses (shown in the figure) formed therein so as to be able to support ingots 100 and wafers. These recesses may, for example, be recesses that can accommodate ingots 100 and wafers of multiple sizes.

[0034] The belt conveyor 7 includes a forward belt conveyor 71 that transports the tray 6 in the direction indicated by arrow Y1 in Figure 1, a return belt conveyor 72 that transports the tray 6 in the direction indicated by arrow Y2 in Figure 1, and a transport section 73 that transports the tray 6 from the end point of the forward belt conveyor 71 to the starting point of the return belt conveyor 72.

[0035] The forward belt conveyor 71 comprises a pair of support walls 74 extending in the Y-axis direction, a plurality of rollers 75 rotatably mounted on the inner surface of the support walls 74 at predetermined intervals in the Y-axis direction, a pair of endless belts 76 wrapped around the rollers 75, and a motor 77 for rotating the rollers 75. The forward belt conveyor 71 transports the trays 6 mounted on the endless belts 76 in the Y1 direction by rotating the endless belts 76 via the rollers 75 using the motor 77.

[0036] The return belt conveyor 72 is positioned below the forward belt conveyor 71, and its configuration may be the same as that of the forward belt conveyor 71. Therefore, the same reference numerals are used here, and detailed explanations are omitted. The return belt conveyor 72 transports the trays 6 loaded on the endless belt 76 in the Y2 direction by rotating the endless belt 76 via rollers 75 using a motor 77, in the opposite direction to that of the forward belt conveyor 71. In the example shown in Figure 1, the forward belt conveyor 71 is positioned above the return belt conveyor 72, but this relationship may be reversed.

[0037] Furthermore, trace stops 78 are positioned on the forward belt conveyor 71 at a location facing the grinding unit 2 and at a location facing the laser irradiation unit 4, respectively, to stop the trays 6 being transported on the forward belt conveyor 71. The trace stopper 78 comprises a substrate 79 fixed by an appropriate bracket (not shown), a lifting plate 80 supported on the upper surface of the substrate 79 so as to be able to move up and down, a cylinder (not shown) for raising and lowering the lifting plate 80, and a stopper piece 81 for stopping transport in the Y1 direction. For example, when the lifting plate 80 is lowered, it allows the trays 6 to pass over the trace stopper 78, and when the lifting plate 80 is raised, it restricts the trays 6 from passing over the trace stopper 78, stopping the transport of the trays 6.

[0038] The transport unit 73 includes a support wall 82 extending in the Z-axis direction, a lifting plate 83 supported by the support wall 82 so as to be able to move up and down, a lifting unit 84 for raising and lowering the lifting plate 83, a mounting plate 85 for mounting a tray 6 on the upper surface of the lifting plate 83 so as to be able to move in the Y-axis direction, and a stopper piece 86 for stopping transport in the Y1 direction.

[0039] The lifting unit 84 is configured, for example, by a known ball screw type moving mechanism, and raises and lowers the lifting plate 83 in the Z-axis direction. The transport unit 73 can contact the tray 6 being transported by the forward belt conveyor 71 with a stopper piece 86, and stop the tray 6 at the end of the forward belt conveyor 71. This end of the forward belt conveyor 71 is located opposite the peeling unit 5. When the lifting plate 83 is lowered to a position where it can move onto the return belt conveyor 72 with the tray 6 stopped, the tray 6 can be transferred from the mounting plate 85 to the endless belt 76 of the return belt conveyor 72. In this way, the transport unit 73 transports the tray 6 from the end of the forward belt conveyor 71 to the starting point of the return belt conveyor 72.

[0040] Furthermore, the belt conveyor 7 includes a first transfer mechanism 120 that transfers the ingot 100 between the tray 6, which is stopped by a trace stopper 78 on the starting side of the forward belt conveyor 71, and the grinding unit 2; a second transfer mechanism 121 that transfers the ingot 100 between the tray 6, which is stopped by a trace stopper 78 on the ending side of the forward belt conveyor 71, and the laser irradiation unit 4; and a third transfer mechanism 123 that transfers the ingot 100 between the tray 6, which is stopped by a transport unit 73, and the peeling unit 5, and also transfers the wafers peeled from the ingot 100 from the peeling unit 5 to the tray 6.

[0041] The first transfer mechanism 120 includes a multi-joint arm 124, a drive source (not shown) for driving the multi-joint arm 124, and a U-shaped suction piece 125 attached to the tip of the multi-joint arm 124. The drive source drives the multi-joint arm 124 to position the suction piece 125 at any position in the X-axis, Y-axis, and Z-axis directions, and the suction piece 125 is used to suck and hold the ingot 100. By driving the multi-joint arm 124, the first transfer mechanism 120 can transfer the ingot 100, which has been sucked up by the suction piece 125, between the tray 6 stopped by the trace stopper 78 and the grinding unit 2. The second transfer mechanism 121 and the third transfer mechanism 123 may have the same configuration as the first transfer mechanism 120, and therefore are given the same reference numerals as the first transfer mechanism 120, and their detailed descriptions are omitted.

[0042] In addition, ingot stockers 130 are positioned near the starting point of the outbound belt conveyor 71 and near the ending point of the return belt conveyor 72. Furthermore, in the Y-axis direction, a loading unit 140 is positioned between the ingot stocker 130 and the outbound belt conveyor 71 to enable the transfer of ingots 100 between the belt conveyor 7 and the ingot stocker 130.

[0043] The ingot stocker 130 consists of a mounting table 131 on which trays 6 supporting ingots 100 are placed, an endless belt 132 that feeds out the trays 6 containing the ingots 100 placed on the mounting table 131, a drive unit (not shown) connected to the endless belt 132 and transmitting driving force, and a rack 133 on which multiple mounting tables 131 are arranged. In the example shown in Figure 1, four mounting tables 131 are arranged on the rack 133. In other words, four trays 6 supporting ingots 100 can be placed in the ingot stocker 130. When the drive unit rotates, the endless belt 132 rotates, and the trays 6 placed on the upper surface of the mounting table 131 are fed out in the Y-axis direction.

[0044] The loading unit 140 is positioned between the belt conveyor 7 and the ingot stocker 130. The loading unit 140 consists of a receiving table 141 that receives trays 6 supporting ingots 100 from the loading table 131, an endless belt 142 that transfers the trays 6 placed on the receiving table 141 to the belt conveyor 7, a motor 143 that drives the endless belt 142, and an elevator 144 that positions the receiving table 141 on any of the multiple loading tables 131 arranged in the Z-axis direction. The loading unit 140 can transfer ingots 100 between the ingot stocker 130 and the forward belt conveyor 71 or the return belt conveyor 72 by rotating the endless belt 142 with the motor 143.

[0045] The detection unit 9 detects the processing state of the ingot 100. Here, "processing state" mainly refers to the state of the surface 100a of the ingot 100, but in this embodiment, it also detects the presence or absence of a delamination layer S formed inside the ingot 100 that is not visible on the surface 100a of the ingot 100.

[0046] The processing state of the ingot 100 varies depending on the ingot 100 set in the ingot stocker 130. Figure 8 is a cross-sectional view showing the processing state of the ingot 100, and five examples are shown here. Figure 8(a) shows the ingot 100 in the state cut by a wire saw or the like (also called an as-sliced ​​wafer). Figure 8(b) shows the ingot 100 in the state mirror-finished by the grinding unit 2. Figure 8(c) shows the ingot 100 in the state where a delamination layer S has been formed by the laser irradiation unit 4. Figure 8(d) shows the ingot 100 in the state where identification information such as an ID or a mark has been applied to the surface 100a of the ingot 100 with the delamination layer S formed thereon by a marking unit (not shown). Figure 8(e) shows the ingot 100 in the state where the wafer has been peeled off by the delamination unit 5. The marking unit is provided, for example, between the laser irradiation unit 4 and the peeling unit 5 in the manufacturing apparatus 1, so that identification information such as an ID or a mark is applied to the surface 100a after the ingot 100 has been irradiated with a laser beam.

[0047] As described above, the processing state of the ingots 100 that can be set in the ingot stocker 130 varies. The ingots 100 set in the ingot stocker 130 are then transported via the forward belt conveyor 71 to one of the units: the grinding unit 2, the laser irradiation unit 4, or the peeling unit 5. However, there is a possibility of misjudging the processing state of the set ingots 100. For example, it can be difficult for an operator with little experience operating the manufacturing equipment 1 to accurately determine its processing state. Furthermore, even if an operator accurately determines the processing state of the ingots 100, there is a possibility of input errors when entering the processing state. In such cases, processing defects may occur, or the manufacturing equipment 1 may stop due to errors.

[0048] Therefore, in this embodiment, a detection unit 9 is provided to detect the processing state of the ingot 100 in order to prevent such so-called human errors. Specifically, the detection unit 9 is provided adjacent to the loading unit 140. Here, "adjacent" means, for example, as shown in Figures 1 and 9, above the loading unit 140, or at least between the ingot stocker 130 and the trace stopper 78, which is located opposite the grinding unit 2 in the Y1 direction of the forward belt conveyor 71. If the detection unit 9 is provided beyond the trace stopper 78 opposite the grinding unit 2, then if the detected processing state of the ingot 100 is not mirror-finish, the ingot 100 should be transported to the grinding unit 2, but it will pass the grinding unit 2 instead.

[0049] As shown in Figures 10 and 11, the detection unit 9 includes an illuminator 90 and an imaging unit 91 that receives reflected light 90b from the light 90a of the illuminator 90 reflected from the upper surface of the ingot 100. The image captured by the imaging unit 91 is output to the control unit 10. Although the illuminator 90 and the imaging unit 91 are positioned opposite each other in the Y-axis direction (i.e., the transport direction) as shown in Figure 10, the positions in which the illuminator 90 and the imaging unit 91 are provided can be any position, and for example, they may be positioned opposite each other in the X-axis direction.

[0050] The illuminator 90 and the imaging unit 91 are arranged at a predetermined distance from each other in the transport direction (Y1 direction) of the forward belt conveyor 71 and are supported by appropriate brackets (not shown). The light 90a from the illuminator 90 may be, for example, visible light. As the imaging unit 91, for example, a line sensor in which a number of image sensors are arranged linearly can be used.

[0051] As shown in Figure 11, the angle θ1 (incident angle θ1) between the light 90a from the illuminator 90 and the normal L to the surface of the ingot 100 is preferably the angle at which total internal reflection occurs. However, the incident angle θ1 should be such that a portion of the light 90a from the illuminator 90 is reflected by the surface of the ingot 100, allowing the imaging unit 91 to image defects on the upper surface of the ingot 100.

[0052] Note that the example shown in Figure 12 is an example in which the light 90a from the illuminator 90 is irradiated onto the peeling layer S, and its configuration may be the same as that of the example in Figure 11. Therefore, a detailed explanation is omitted here.

[0053] Furthermore, the manufacturing apparatus 1 may include other detection units or inspection units. For example, in the example shown in Figure 1, the manufacturing apparatus 1 includes an ingot quality inspection unit 150 for inspecting the quality of the ingot 100, and a wafer quality inspection unit 160 for inspecting the quality of the wafers peeled off from the ingot 100.

[0054] The ingot quality inspection unit 150 is positioned above the forward belt conveyor 71, between a trace topper 78 positioned opposite the grinding unit 2 and a trace topper 78 positioned opposite the laser irradiation unit 4. The ingot quality inspection unit 150 includes an illuminator 151 and an imaging unit 152 that receives reflected light from the surface of the ingot 100, which is reflected by the light from the illuminator 151. The ingot quality inspection unit 150 detects, for example, surface defects of the ingot 100 that would obstruct the incidence of the laser beam from the laser irradiation unit 4.

[0055] The wafer quality inspection unit 160 is positioned adjacent to the end of the forward belt conveyor 71 in the Y1 direction and the peeling unit 5. The wafer quality inspection unit 160 includes an illuminator 161, an imaging unit 162 that receives reflected light from the surface of the wafer reflected by the light from the illuminator 161, and a wafer belt conveyor 163 that moves the wafer when the imaging unit 162 images the wafer. The wafer quality inspection unit 160 detects defects on the surface of the wafer, for example.

[0056] The control unit 10 controls each of the above-mentioned components of the manufacturing apparatus 1 to cause the manufacturing apparatus 1 to execute various processes. The control unit 10 is a computer that includes a control unit 110 that performs various calculations, a storage unit having a storage medium, and an input / output interface (neither shown) that controls the input and output of data to and from the inside and outside of the control unit 10. The control unit 110 includes, for example, a microprocessor such as a CPU (Central Processing Unit). The storage unit has memory such as an HDD (Hard Disk Drive), ROM (Read Only Memory), or RAM (Random Access Memory). The control unit 110 performs various calculations based on a predetermined program stored in the storage unit. The control unit 110 controls the manufacturing apparatus 1 by outputting various control signals to each of the above-mentioned components via the input / output interface according to the calculation results.

[0057] The control unit 110 executes various programs stored in the memory unit. In the manufacturing apparatus 1, as described above, ingots 100 in various processing states can be set in the ingot stocker 130, so a detection unit 9 is provided to detect the processing state. In this embodiment, the detection unit 9 detects the processing state of the ingot 100, and based on the detected information on the processing state of the ingot 100, it executes a program to determine the next processing step to be performed. The specific processing details will be explained in the manufacturing method of the substrate.

[0058] The manufacturing apparatus 1 also includes a cassette stocker 200 for storing cassettes 200a containing wafers peeled off by the peeling unit 5, and a storage unit 210 for storing wafers supported on trays 6 into cassettes stored in the cassette stocker 200. As shown in Figure 1, the cassette stocker 200 can accommodate multiple cassettes 200a. Each cassette 200a contains wafers peeled off from the ingot 100 by the peeling unit 5, and can accommodate multiple wafers (for example, 25 wafers).

[0059] The storage unit 210 is positioned adjacent to the loading unit 140 and the cassette stocker 200. The storage unit 210 comprises a multi-joint arm 211 and a holding piece 212 provided at the tip of the multi-joint arm 211 for holding wafers. The holding piece 212 can be positioned at any position in the X-axis, Y-axis, and Z-axis directions by driving the multi-joint arm 211. The storage unit 210 is also movable in the X-axis and Z-axis directions. Therefore, by moving the storage unit 210 in the X-axis or Z-axis direction, wafers supported on the tray 6 can be held by suction with the holding piece 212. Furthermore, wafers held by the holding piece 212 can be stored in the cassette 200a housed in the cassette stocker 200. Note that the movement of the storage unit 210 in the X-axis and Z-axis directions may be achieved, for example, by a known ball screw type movement mechanism.

[0060] [Manufacturing method for circuit boards] Next, a method for manufacturing a substrate (wafer) will be described. Figure 13 is a flowchart showing an example of a substrate manufacturing method. The substrate manufacturing method of this embodiment includes, as a process, a detection step S10 for detecting the processing state of the ingot 100, a determination step S11 for determining the next processing step to be performed based on the detected processing state, a grinding step S12 for grinding the surface of the ingot 100, a release layer formation step S13 for forming a release layer S inside the ingot 100, and a peeling step S14 for peeling the wafer from the release layer S.

[0061] The processing steps after the determination step S11 may vary depending on the processing state of the ingot 100 detected in the detection step S10. In other words, they may vary depending on the ingot 100 set in the ingot stocker 130. For example, using the example in Figure 8 above, if the processing state of the ingot 100 is the state of the as-sliced ​​wafer shown in Figure 8(a), it is determined that the grinding step S12 should be performed as the next processing step because the surface is not flattened or not mirror-finished. If the processing state of the ingot 100 is the mirror-finished state shown in Figure 8(b), it is determined that the delamination layer formation step S13 should be performed as the next processing step. If the processing state of the ingot 100 is the state in which the delamination layer S is formed as shown in Figure 8(c), it is determined that the delamination step S14 should be performed as the next processing step. Similarly, if the surface of the ingot 100 on which the peeled layer S shown in Figure 8(d) is formed has identification information or markings, it is determined that the peeling step S14 should be performed as the next processing step. Furthermore, if the processed state of the ingot 100 is such that the surface is not flattened or mirror-finished as in Figure 8(e) after peeling the wafer, it is determined that the grinding step S12 should be performed as the next processing step.

[0062] As described above, the processing steps to be performed after the determination step S11 may vary depending on the processing state of the ingot 100. However, in the example shown in Figure 13, for the sake of explanation, we will describe an example where, based on the processing state of the ingot 100, it is determined in the determination step S11 that the surface of the ingot 100 is not flat or not mirror-finish, and the grinding step S12 is performed as the next processing step. The following describes each step in detail.

[0063] In detection step S10, the control unit 110 detects the processing state of the ingot 100 supported on the tray 6 by the detection unit 9. Specifically, the control unit 110 receives the tray 6 set in the ingot stocker 130 with the loading unit 140 and starts transporting the ingot 100 by the forward belt conveyor 71. At this time, as described above, in this embodiment, the detection unit 9 is provided above the loading unit 140, so the control unit 110 acquires information on the processing state of the ingot 100 by imaging the processing state of the ingot 100 with the imaging unit 91 of the detection unit 9. More specifically, the illuminator 90 irradiates the ingot 100 with light 90a and detects the reflected light 90b from the surface 100a and the peeling layer S of the ingot 100. The detected information is stored in the storage unit of the control unit 10.

[0064] Figure 14 shows an example of an image stored in the memory unit, where the image in Figure 14(a) is the image acquired in the detection step S10 described above. The other images in Figures 14(b) to 14(e) will be described later in the section on modified examples. The image shown in Figure 14(a) shows the state in which the peeled surface of the wafer remains on the surface, that is, the surface 100a is not flattened or mirrored. The image is stored as binary image data, for example, white and black, as shown in Figure 14.

[0065] In the determination step S11, the control unit 110 determines the next processing step to be performed based on the information acquired in the detection step S10. Specifically, the control unit 110 refers to the memory unit and, based on the captured image acquired in the detection step S10, determines the shape of the surface 100a indicating the processing state of the ingot 100, and determines the next processing step to be performed. For example, the control unit 110 refers to the memory unit and grasps the captured image in Figure 14(a) above, and from this captured image, determines that the next processing step to be performed is a grinding step. That is, in the example of Figure 14(a), as described above, the surface 100a is not flattened or mirror-finished, so it is determined that the surface of the ingot 100 should be ground in the next processing step. As described above, since the captured image is binary image data, the control unit 110 can easily determine what state the captured image is in by grasping the captured image, and based on that determination, it can determine the next processing step to be performed. Furthermore, to determine the captured image more accurately, for example, patterns of potentially expected captured images may be stored in the memory unit, and the control unit may perform a matching process between the captured image and the stored patterns to determine the state of the captured image. In this way, pattern matching can be used to determine the next processing step to be performed more accurately.

[0066] Then, once the control unit 110 has determined the next processing step to be performed, it transports the tray 6 on the forward belt conveyor 71 to the position where the processing step to be performed will be carried out. In this embodiment, the tray 6 is transported to a position facing the grinding unit 2 where the next grinding step S12 will be performed. That is, the lifting plate 80 of the trace stopper 78 is controlled to stop the tray 6 at a position facing the grinding unit 2. Then, the control unit 110 uses the first transfer mechanism 120 to transfer the ingot 100 between the tray 6 and the grinding unit 2, and performs the grinding step S12 on the ingot 100 held by the holding surface 20a of the first holding table 20 in the grinding unit 2.

[0067] In grinding step S12, the control unit 110 adjusts the positional relationship between the first holding table 20 and the grinding unit 2, as shown in Figure 2 above, so that the center of the ingot 100 held by the holding surface 20a of the first holding table 20 coincides with the trajectory of the grinding wheel. Then, while rotating the first holding table 20 and the grinding wheel 31 respectively, the control unit 110 lowers the grinding wheel 31 along the processing feed direction parallel to the rotation axis of the spindle 29, i.e., along the Z-axis direction. This brings the lower surface of the grinding wheel 33 closer to the upper surface of the wafer. The control unit 110 further lowers the grinding unit 2 and starts grinding the ingot 100 by bringing the lower surface of the grinding wheel 33 into contact with the ingot 100 held by the first holding table 20. As grinding of the ingot 100 progresses, the surface of the ingot 100 becomes flattened and its surface becomes mirror-like.

[0068] After performing the grinding step S12, the control unit 110 transfers the ingot 100 between the grinding unit 2 and the tray 6 using the first transfer mechanism 120, and then transports the tray 6 to a position facing the laser irradiation unit 4 using the forward belt conveyor 71 to perform the next processing step, the peeling layer formation step S13. In other words, it controls the lifting plate 80 of the trace stopper 78 to stop the tray 6 at a position facing the laser irradiation unit 4. Then, the control unit 110 transfers the ingot 100 between the tray 6 and the laser irradiation unit 4 using the second transfer mechanism 121, and performs the peeling layer formation step S13 on the ingot 100 held by the holding surface 40a of the second holding table 40 in the laser irradiation unit 4.

[0069] In the delamination layer formation step S13, the control unit 110 irradiates the surface 100a of the ingot 100, which is held by the second holding table 40, with a laser beam having a wavelength that penetrates the ingot 100, and forms a delamination layer S by positioning the focal point of the laser beam at a position deeper than the surface 100a of the ingot 100. For example, the control unit 110 forms the delamination layer S by positioning the focal point of the laser beam at a depth corresponding to the target wafer thickness. Then, as shown in Figure 4, the control unit 110 processes and feeds the ingot 100 so that the focal point moves from one end to the other along the X-axis direction to form a delamination layer S along the X-axis direction, and then processes and feeds the ingot 100 by a predetermined amount in the Y-axis direction, and then processes and feeds the ingot 100 so that the focal point moves from the other end to the one end along the X-axis direction to form a delamination layer S along the X-axis direction, and repeats this process. As a result, a delamination layer S containing cracks is formed inside the ingot 100.

[0070] After performing the peeling layer formation step S13, the control unit 110 uses the second transfer mechanism 121 to transfer the ingot 100 between the laser irradiation unit 4 and the tray 6, and the forward belt conveyor 71 transports the tray 6 to a position facing the peeling unit 5 in order to perform the next processing step, the peeling step S14. In other words, it controls the lifting plate 83 of the transport unit 73 to stop the tray 6 at a position facing the peeling unit 5. Then, the control unit 110 uses the third transfer mechanism 123 to transfer the ingot 100 between the tray 6 and the peeling unit 5, and performs the peeling step S14 on the ingot 100 held by the holding surface 80a of the third holding table 50 in the peeling unit 5.

[0071] In the delamination step S14, the control unit 110 delaminates a thin plate, including the surface 100a of the ingot 100, as a wafer, starting from the delamination layer S. In other words, it separates a portion of the ingot 100 as a wafer. Specifically, the control unit 110 lowers the arm 55 in the delamination unit 5 and applies ultrasonic vibrations to the ingot 100 from the ultrasonic transducer 57. The ultrasonic waves irradiated from the ultrasonic transducer 57 are transmitted to the ingot 100 via the liquid layer WL, causing the cracks in the delamination layer S formed on the ingot 100 to extend. As a result, the strength of the delamination layer S decreases, the ingot 100 breaks starting from the delamination layer S, and the upper part of the ingot 100 is delaminated as a wafer.

[0072] After performing the peeling step S14, the control unit 110 transfers the ingot 100 between the peeling unit 5 and the tray 6 using the third transfer mechanism 123, and controls the lifting plate 83 of the transport unit 73 to transport the tray 6 to the return belt conveyor 72 and to the end of the return belt conveyor 72. Then, from the end of the return belt conveyor 72, the control unit 110 transports the peeled wafers from the ingot 100 to the cassette 200a of the cassette stocker 200 via the loading unit 140 using the articulated arm 211 and holding piece 212 in the storage unit 210. In this way, the wafers peeled from the ingot 100 are transported from the peeling unit 5 to the cassette 200a of the cassette stocker 200 and stored.

[0073] Meanwhile, the wafer-detached ingot 100 is similarly transported to the end of the return belt conveyor 72, and then transported to the outbound belt conveyor 71 to perform the detachment step S14 again.

[0074] [Differentiation] Next, we will describe a modified example. As mentioned above, the processing state of the ingot 100 that can be detected in detection step S10 can vary. Here, we will describe an example in which, in detection step S10, the image captured from Figure 14(b) to Figure 14(e), other than Figure 14(a) described above, is acquired.

[0075] Figure 14(b) shows an example where the surface of the ingot 100 is mirror-finished and planar. If such an image is obtained in detection step S10, the determination step S11 determines that the next processing step to be performed is the peeling layer formation step S13. The details of the peeling layer formation step S13 are as described above, so the explanation is omitted here. After the peeling layer formation step S13, the peeling step S14 is performed and the process returns.

[0076] Figure 14(c) shows an example where laser processing marks from the laser irradiation unit 4 remain on the surface of the ingot 100. Also in Figure 14(c), an example where marking marks have appeared on the surface of the ingot 100 where the peeled layer S has been formed. If such an image is obtained in detection step S10, the determination step S11 determines that the next processing step to be performed is the peeling step S14. The details of the peeling step S14 are as described above, so the explanation is omitted here. After the peeling step S14, the process returns.

[0077] Furthermore, the ingots 100 that can be set in the ingot stocker 130 may include ingots 100 with processing defects. For example, Figure 14(d) shows a state in which the surface of the ingot 100 has been roughly ground and laser processing marks from the laser irradiation unit 4 remain. Normally, as explained in the flowchart of Figure 13 above, the peeling step S14 would be performed because it is in a laser processed state. However, if such an image is obtained in the detection step S10, the surface of the ingot 100 has not been flattened, so the determination step S11 determines that the next processing step to be performed is the grinding step S12. The details of the grinding step S12 are as described above, so the explanation is omitted here. After the grinding step S12, the processing is carried out in the order of peeling layer formation step S13 and peeling step S14.

[0078] Furthermore, Figure 14(e) shows an example where the surface of the ingot 100 has not been polished to a mirror finish after grinding. If such an image is obtained in detection step S10, determination step S11 determines that the next processing step to be performed to polish the surface of the ingot 100 to a mirror finish is grinding step S12. The details of grinding step S12 are as described above, so their explanation is omitted here.

[0079] In other words, the determination of whether to perform the grinding step S12 is that the surface of the ingot 100 is not mirror-finished or flattened, and this can be said to be a state in which cutting tool marks remain on the surface of the ingot 100, laser processing marks remain on the surface of the ingot 100, or grinding marks remain on the surface of the ingot 100.

[0080] Furthermore, as a modification of the flowchart in Figure 13 described above, a step of applying identification information or a mark may be added from the marking unit (not shown) described above. As described above, in the processed state of the ingot 100, identification information such as an ID or a mark may be applied to the surface 100a. Therefore, in such cases, the control example shown in Figure 15 may be modified. Specifically, in the example shown in Figure 15, a marking step S20 is added between the delamination layer formation step S13 and the delamination step S14. In the marking step, the control unit 110 applies identification information such as an ID or a mark to the surface of the ingot 100 that has been irradiated with a laser beam. As a result, for example, the delaminated wafer will have identification information or a mark applied to it, making it easier for operators or other managers to manage the wafer.

[0081] Although each embodiment has been described above with reference to the drawings, it goes without saying that the present invention is not limited to these embodiments. It is clear to those skilled in the art that various modifications and alterations can be conceived within the scope of the claims, and these are also understood to naturally fall within the technical scope of the present invention. Furthermore, the components of the above embodiments may be combined arbitrarily without departing from the spirit of the invention.

[0082] For example, in the above embodiment, the case where the workpiece is an ingot 100 was described as an example, but it is not limited to this, and for example, the workpiece may be a wafer. When the workpiece is a wafer, in the substrate manufacturing method in the above embodiment, the wafer, which is the workpiece, will be further divided into multiple wafers.

[0083] Furthermore, in the above-described embodiment, a series of processing treatments were performed on the surface 100a of the ingot 100, but instead of the surface 100a of the ingot 100, a series of processing treatments may be performed on the back surface 100b.

[0084] Furthermore, the method for manufacturing the substrate described in the above-described embodiment can be realized by executing a pre-prepared control program on a computer. This control program is recorded on a computer-readable storage medium and executed by reading it from the storage medium. This control program may also be provided in the form of a non-transient storage medium such as flash memory, or it may be provided via a network such as the Internet. The computer that executes this control program may be included in the processing unit, or it may be included in an electronic device such as a smartphone, tablet terminal, or personal computer that can communicate with the processing unit, or it may be included in a server device that can communicate with these processing units and electronic devices.

[0085] This specification contains at least the following information. Note that the components etc. in parentheses indicate those corresponding to the embodiments described above, but are not limited thereto.

[0086] (1) A method for manufacturing a substrate from a workpiece (ingot 100), The workpiece has a first surface (front surface 100a) and a second surface (back surface 100b) opposite to the first surface, and the grinding step (grinding step S12) is performed to grind the first surface. A peeling layer formation step (peeling layer formation step S13) involves positioning the focal point of a laser beam with a penetrating wavelength at a position deeper than the first surface of the workpiece, and irradiating the workpiece with the laser beam from the first surface to form a peeling layer (peeling layer S), A peeling step (peeling step S14) is performed to peel the substrate from the peeling layer, A detection step (detection step S10) for detecting the processing state of the workpiece, The system includes a determination step (determination step S11) that determines the next processing step to be performed based on the information acquired in the detection step. A method for manufacturing a circuit board.

[0087] According to (1), the next processing step to be performed can be determined based on the information acquired in the detection step, so for example, the processing state of the workpiece can be determined without the operator's judgment. In other words, the appropriate processing step to be performed next can be automatically determined without the operator having to visually check the state of the workpiece, thus preventing human error. With this configuration, it is possible to suppress problems such as processing defects or the equipment stopping due to errors.

[0088] (2) A method for manufacturing a substrate as described in (1), The aforementioned detection step is, The workpiece is irradiated with light (light 90a), and reflected light (reflected light 90b) from the first surface or the peeling layer is detected. A method for manufacturing a circuit board.

[0089] According to (2), the state of the workpiece can be determined based on reflected light from the first surface of the workpiece or the peeling layer, using a simple configuration such as a conventionally known imaging unit.

[0090] (3) A method for manufacturing a substrate as described in (1) or (2), The aforementioned determination step is, Based on the information obtained in the above detection step, the shape of the first surface is determined. The grinding step is performed when the first surface is not a mirror surface. A method for manufacturing a circuit board.

[0091] According to (3), if the surface of the workpiece is not mirror-finished based on the information obtained in the detection step, the workpiece can be reliably made mirror-finished by performing the grinding step.

[0092] (4) A method for manufacturing a substrate as described in (3), If the first surface is not a mirror surface, then it is in one of the following states: cutting tool marks remain on the first surface, laser processing marks remain on the first surface, or grinding marks remain on the first surface. A method for manufacturing a circuit board.

[0093] According to (4), if the first surface is not a mirror finish, it is conceivable that cutting tool marks, laser processing marks, grinding marks, etc. will remain, but in any case, the workpiece can be reliably made mirror-finished by performing the grinding step.

[0094] (5) A method for manufacturing a substrate as described in (1) or (2), The aforementioned determination step is, Based on the information obtained in the above detection step, the shape of the first surface is determined. The peeling layer formation step is performed when the first surface is a mirror surface. A method for manufacturing a circuit board.

[0095] According to (5), if the surface of the workpiece is mirror-finished based on the information obtained in the detection step, the peeling layer can be reliably formed by performing the peeling layer formation step.

[0096] (6) A method for manufacturing a substrate as described in (1) or (2), The aforementioned determination step is, Based on the information obtained by the above detection step, the presence or absence of the peeling layer in the workpiece is determined. If the aforementioned peeling layer is present, the peeling step is performed. A method for manufacturing a circuit board.

[0097] According to (6), if a peeling layer is present based on the information obtained in the detection step, the substrate can be reliably produced by performing the peeling step.

[0098] (7) A method for manufacturing a substrate as described in (6), The process further includes a marking step (marking step S20) for marking the first surface of the substrate after the release layer formation step and before the peeling step, The aforementioned determination step is, Based on the information obtained in the above detection step, the shape of the first surface is determined. The peeling step is performed when the mark is affixed to the first surface. A method for manufacturing a circuit board.

[0099] According to (7), by performing the peeling step when a mark is present on the first surface based on the information obtained in the detection step, for example, the peeled substrate will have a mark on it, making it easier for operators and other managers to manage the substrates.

[0100] (8) A substrate manufacturing apparatus (manufacturing apparatus 1) for manufacturing a substrate from a workpiece (ingot 100), A grinding unit (grinding unit 2) grinds and flattens the surface (surface 100a) of the workpiece held on the first holding table (first holding table 20), A laser irradiation unit (laser irradiation unit 4) positions the focal point of a laser beam with a penetrating wavelength at a position deeper than the surface of the workpiece held on the second holding table (second holding table 40), and irradiates the workpiece with the laser beam to form a peel layer, A peeling unit (peeling unit 5) holds the surface of the workpiece held on the third holding table (third holding table 50) and peels the substrate from the peeling layer, A tray (tray 6) capable of supporting the workpiece and the peeled substrate, A belt conveyor (belt conveyor 7) transports the workpiece supported on the tray between the grinding unit, the laser irradiation unit, and the peeling unit. A loading unit (loading unit 140) that loads the workpiece supported on the tray onto the belt conveyor, A detection unit (detection unit 9) for detecting the processing state of the workpiece, It includes a control unit (control unit 10), The aforementioned detection unit is provided adjacent to the aforementioned loading unit, The control unit is Based on the detection result of the detection unit, the destination for transporting the workpiece is determined from among the grinding unit, the laser irradiation unit, and the peeling unit. Circuit board manufacturing equipment.

[0101] According to (8), the destination for transporting the workpiece is determined based on the detection results of the detection unit, so the destination for the next workpiece can be determined without the operator's judgment. As a result, the appropriate processing to be performed next can be automatically determined without the operator having to visually check the condition of the workpiece, thus preventing human errors such as input errors by the operator or errors in judging the processing state of the workpiece. With this configuration, it is possible to suppress problems such as processing defects or the machine stopping due to errors. [Explanation of symbols]

[0102] 1 Manufacturing equipment 2 Grinding Units 4. Laser irradiation unit 5. Peeling Unit 6 trays 7. Belt conveyor 9 Detection Unit 10 Control Unit 20 First Holding Table 40 Second storage table 50 Third retention table 90a light 90b reflected light 100 ingots (workpieces) 100a Surface (first side) 100b Back side (second side) 140 Delivery Units S Delamination layer S10 Detection Step S11 Judgment Step S12 Grinding Step S13 Step to form a peeling layer S14 Peeling step S20 Marking Step

Claims

1. A method for manufacturing a substrate from a workpiece, A grinding step of grinding the first surface of a workpiece having a first surface and a second surface opposite to the first surface, A peel layer forming step involves positioning the focal point of a laser beam with a penetrating wavelength at a position deeper than the first surface of the workpiece, and irradiating the workpiece with the laser beam from the first surface to form a peel layer, A peeling step of peeling the substrate from the peeling layer, A detection step for detecting the processing state of the workpiece, The system includes a determination step that determines the next processing step to be performed based on the information acquired in the detection step. A method for manufacturing a circuit board.

2. A method for manufacturing a substrate according to claim 1, The aforementioned detection step is, The workpiece is irradiated with light, and the reflected light from the first surface or the peeling layer is detected. A method for manufacturing a circuit board.

3. A method for manufacturing a substrate according to claim 1 or 2, The aforementioned determination step is, Based on the information obtained in the above detection step, the shape of the first surface is determined. The grinding step is performed when the first surface is not a mirror surface. A method for manufacturing a circuit board.

4. A method for manufacturing a substrate according to claim 3, If the first surface is not a mirror surface, then it is in one of the following states: cutting tool marks remain on the first surface, laser processing marks remain on the first surface, or grinding marks remain on the first surface. A method for manufacturing a circuit board.

5. A method for manufacturing a substrate according to claim 1 or 2, The aforementioned determination step is, Based on the information obtained in the above detection step, the shape of the first surface is determined. The peeling layer formation step is performed when the first surface is a mirror surface. A method for manufacturing a circuit board.

6. A method for manufacturing a substrate according to claim 1 or 2, The aforementioned determination step is, Based on the information obtained by the above detection step, the presence or absence of the peeling layer in the workpiece is determined. If the aforementioned peeling layer is present, the peeling step is performed. A method for manufacturing a circuit board.

7. A method for manufacturing a substrate according to claim 6, The following steps are further provided: after the release layer formation step and before the peeling step, a marking step for marking the substrate on the first surface. The aforementioned determination step is, Based on the information obtained in the above detection step, the shape of the first surface is determined. The peeling step is performed when the mark is affixed to the first surface. A method for manufacturing a circuit board.

8. A substrate manufacturing apparatus for manufacturing a substrate from a workpiece, A grinding unit that grinds and flattens the surface of the workpiece held on the first holding table, A laser irradiation unit that positions the focal point of a laser beam with a penetrating wavelength at a position deeper than the surface of the workpiece held on a second holding table, and irradiates the workpiece with the laser beam to form a peel layer, A peeling unit that holds the surface of the workpiece held on a third holding table and peels the substrate from the peeling layer, A tray capable of supporting the workpiece and the peeled substrate, A belt conveyor transports the workpiece supported on the tray between the grinding unit, the laser irradiation unit, and the peeling unit. A loading unit that loads the workpiece supported on the tray onto the belt conveyor, A detection unit for detecting the processing state of the workpiece, It includes a control unit, The aforementioned detection unit is provided adjacent to the aforementioned loading unit, The control unit is Based on the detection result of the detection unit, the destination for transporting the workpiece is determined from among the grinding unit, the laser irradiation unit, and the peeling unit. Circuit board manufacturing equipment.

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