Substrate processing method and substrate processing apparatus

Abstract

This enables peripheral exposure that matches the state of the outer edge of the underlying film. [Solution] A substrate processing method according to one aspect of the present disclosure includes: generating edge information showing the relationship between the circumferential position around the center of the substrate and the outer edge position of the first coating in the radial direction of the substrate, based on an image obtained by imaging the peripheral region on the surface of a substrate on which a first coating has been formed on the surface; setting an exposure map showing the relationship between the circumferential position and a set value of the exposure width in the radial direction based on the edge information; forming a second coating on at least the peripheral region of the surface after the image is obtained; obtaining warpage information of the substrate after the formation of the second coating; setting the relationship between the circumferential position and the exposure position information of the substrate in the exposure map based on the warpage information; and exposing the second coating in the peripheral region according to the exposure map.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing method and a substrate processing apparatus.

Background Art

[0002] Patent Document 1 discloses a substrate processing apparatus. This substrate processing apparatus is described as obtaining the warpage amount of a substrate on which a film is formed from a captured image and controlling the peripheral exposure width based on the warpage amount.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a substrate processing method and a substrate processing apparatus capable of performing peripheral exposure in accordance with the position of a substrate during exposure according to the warpage state and the state of the outer edge in the lower layer film.

Means for Solving the Problems

[0005] A substrate processing method relating to one aspect of the present disclosure includes: generating edge information showing the relationship between the circumferential position around the center of the substrate and the outer edge position of the first coating in the radial direction of the substrate, based on an image obtained by imaging the peripheral region on the surface of a substrate on which a first coating has been formed; setting an exposure map showing the relationship between the circumferential position and a set value of the exposure width in the radial direction, based on the edge information; forming a second coating on at least the peripheral region of the surface after the image is obtained; obtaining the warpage state of the substrate after the second coating has been formed; setting the relationship between the circumferential position and the exposure position information of the substrate in the exposure map, based on the warpage information; and exposing the second coating in the peripheral region according to the exposure map. [Effects of the Invention]

[0006] According to this disclosure, a substrate processing method and a substrate processing apparatus are provided that enable peripheral exposure tailored to the position of the substrate during exposure according to the warp state and the state of the outer edge of the underlying film. [Brief explanation of the drawing]

[0007] [Figure 1] Figure 1 is a schematic plan view showing an example of a wafer processing system. [Figure 2] Figure 2 is a schematic front view showing an example of a wafer processing system. [Figure 3] Figure 3 is a schematic diagram showing an example of a liquid processing apparatus. [Figure 4] Figure 4 is a schematic plan view showing an example of an inspection device. [Figure 5] Figure 5 is a schematic front view showing an example of an inspection device. [Figure 6] Figure 6(a) is a schematic diagram showing an example of a peripheral exposure apparatus. Figure 6(b) is a schematic side view showing an example of a mask member. [Figure 7] Figure 7 is a block diagram showing an example of the functional configuration of a control device. [Figure 8]Figure 8 is a block diagram showing an example of the hardware configuration of a control device. [Figure 9] Figure 9 is a flowchart showing an example of a substrate processing method. [Figure 10] Figures 10(a), 10(b), 10(c), 10(d), 10(e), and 10(f) are schematic diagrams illustrating the substrate processing method. [Figure 11] Figure 11(a) shows an example of a peripheral image. Figure 11(b) is a graph showing an example of edge information. [Figure 12] Figure 12(a) is a graph that visualizes an example of an exposure map. Figure 12(b) is a schematic diagram that shows an example of the state of the film after exposure and development. [Figure 13] Figure 13 is a graph showing an example of the relationship between edge information and exposure map. [Figure 14] Figure 14(a) is a graph showing an example of the measurement results of the exposure width after exposure. Figure 14(b) is a graph showing an example of the difference information obtained in the inspection process. [Figure 15] Figures 15(a), 15(b), 15(c), 15(d), 15(e), and 15(f) are schematic diagrams illustrating the substrate processing method. [Figure 16] Figures 16(a), 16(b), 16(c), and 16(d) are schematic diagrams illustrating the substrate processing method. [Figure 17] Figure 17(a) is a schematic diagram illustrating the effects of warping. Figure 17(b) is a schematic diagram showing an example of a peripheral exposure apparatus. [Figure 18] Figure 18 is a schematic diagram showing another example of a peripheral exposure system. [Figure 19] Figure 19 is a schematic diagram showing another example of a peripheral exposure system. [Figure 20] Figure 20 is a flowchart showing an example of a substrate processing method. [Figure 21]FIG. 21(a) is a graph showing an example of the measurement result of edge information. FIG. 21(b) is a graph showing an example of the measurement result of the Z-direction position of the peripheral portion of the substrate. FIG. 21(c) is a graph showing an example of a correlation formula indicating the position of the rotation holding portion from the measurement result of the Z-direction position of the peripheral portion of the substrate. [Figure 22] FIG. 22 is a graph showing an example of the relationship between the exposure map and the exposure width.

Mode for Carrying Out the Invention

[0008] Hereinafter, an embodiment will be described with reference to the drawings. In the description, the same reference numerals are given to the same elements or elements having the same function, and redundant descriptions are omitted. In some of the drawings, an orthogonal coordinate system defined by the X-axis, Y-axis, and Z-axis is shown. In the following embodiment, the X-axis and Y-axis correspond to the horizontal direction, and the Z-axis corresponds to the vertical direction.

[0009] <Wafer Processing System> First, the configuration of the wafer processing system according to the present embodiment will be described. FIGS. 1 and 2 are a plan view and a front view schematically showing the outline of the configuration of the wafer processing system 1, respectively. In the present embodiment, a case where the wafer processing system 1 (substrate processing apparatus) is a photolithography processing system that performs a resist film formation process and a development process on a wafer W (substrate) will be described as an example.

[0010] As shown in FIG. 1, the wafer processing system 1 has a cassette station 2 into which a cassette C containing a plurality of wafers W is carried in and out, and a processing station 3 provided with a plurality of various processing apparatuses for performing predetermined processing on the wafer W. And the wafer processing system 1 has a configuration in which the cassette station 2, the processing station 3, and an interface station 4 for transferring the wafer W between the processing station 3 and an exposure apparatus (not shown) adjacent to the opposite side of the processing station 3 are integrally connected. Although two processing stations 3 are provided between the cassette station 2 and the interface station 4 as shown in FIG. 1, one processing station 3 may be provided, or three or more processing stations 3 may be provided.

[0011] Cassette station 2 is equipped with multiple cassette mounting tables 21, wafer transfer devices 22 and 23. In cassette station 2, wafers W are transferred between cassette C, which is placed on the cassette mounting table 21, and processing station 3 by wafer transfer devices 22 or 23. For this purpose, wafer transfer devices 22 and 23 are equipped with drive mechanisms in the X direction, Y direction, vertical direction, and around the vertical axis (θ direction) as needed, and may be equipped with drive mechanisms in all directions. At least one of wafer transfer devices 22 and 23 is capable of transferring wafers W to and from cassette C, and is also capable of transferring wafers W to and from processing station 3. The transfer operation of wafers W to and from processing station 3 refers, for example, to the transfer of wafers W to a third block G3 equipped with a transfer device accessible to the wafer transfer device 33 in processing station 3, which will be described later. The third block G3 may be equipped with multiple transfer devices (not shown) arranged in the vertical direction.

[0012] An inspection device U3 for inspecting wafers W may be located in a position accessible by either wafer transport device 22 or wafer transport device 23. The inspection device U3 may be located within cassette station 2 (for example, third block G3). The inspection device U3 may be located in processing station 3 or interface station 4, either in place of or in addition to cassette station 2.

[0013] The processing station 3 is provided with multiple blocks, for example, a first block G1, a second block G2, and a fourth block G4. As shown in Figure 2, multiple layers 31, each containing the first block G1 and the second block G2, are stacked vertically. For example, the first block G1 is provided on the front side of the processing station 3 (negative X direction side in Figure 1), and the second block G2 is provided on the rear side of the processing station 3 (positive X direction side in Figure 1). A fourth block G4 is provided at the connection point between the processing station 3 located on the cassette station 2 side (negative Y direction side in Figure 1) and the processing station 3 located on the interface station 4 side (positive Y direction side in Figure 1). The fourth block G4 may be equipped with multiple transfer devices arranged vertically. The aforementioned third block G3 may also be provided within the processing station 3.

[0014] The first block G1 contains a plurality of film processing devices U1. These film processing devices U1 are, for example, patterning film forming devices and developing devices. Patterning film forming devices may include, for example, resist film forming devices as well as anti-reflective film forming devices. At least some of the plurality of film processing devices U1 may be devices that perform film processing using a processing solution. Film processing includes forming a film and performing a developing process.

[0015] In the first block G1, for example, multiple membrane processing devices U1 are arranged horizontally. The number, arrangement, and type of these membrane processing devices U1 can be arbitrarily selected.

[0016] These patterning film forming apparatuses and developing apparatuses perform operations such as supplying a predetermined processing solution or a predetermined gas onto a wafer W. In this way, the patterning film forming apparatuses create resist films that are used as masks when forming patterns on the lower layer films, or anti-reflective films that enable efficient light irradiation processes, such as exposure processing. Meanwhile, the developing apparatuses remove a portion of the exposed resist film to form the uneven shape that serves as the mask.

[0017] For example, in the second block G2, heat treatment devices U2 for performing heat treatment such as heating and cooling of the wafer W are arranged in the vertical and horizontal directions. Also in the second block G2, a hydrophobic treatment device (not shown) for performing hydrophobic treatment to improve the adhesion between the resist solution and the wafer W, and a peripheral exposure device U4 for exposing the outer periphery of the wafer W are arranged in the vertical (Z direction in Figure 2) and horizontal directions. The number and arrangement of these heat treatment devices, hydrophobic treatment devices, and peripheral exposure device U4 can also be arbitrarily selected. The peripheral exposure device U4 may be placed in the interface station 4 instead of, or in addition to, the processing station 3 (for example, the second block G2). Both the inspection device U3 and the peripheral exposure device U4 may be placed in the processing station 3, or in the interface station 4.

[0018] As shown in Figure 1, a wafer transport area 32 is formed in the region sandwiched between the first block G1 and the second block G2 in a plan view. A wafer transport device 33, for example, is arranged in the wafer transport area 32.

[0019] The wafer transfer device 33 has a transfer arm that can move, for example, in the Y direction, front-back direction, θ direction, and up-down direction. The wafer transfer device 33 moves within the wafer transfer area 32 and can transfer wafers W to predetermined devices in the surrounding first block G1, second block G2, third block G3, and fourth block G4. If there are multiple processing stations 3 as shown in Figure 1, the wafer transfer device 33 provided at the processing station 3 located on the interface station 4 side can transfer wafers W to predetermined devices in the fifth block G5, which will be described later, in addition to the first block G1, second block G2, and fourth block G4.

[0020] Multiple wafer transfer devices 33 are arranged, for example, vertically. One wafer transfer device 33 can transfer a wafer W to a predetermined device located at the height of multiple upper layers 31 of the multiple layers 31 stacked vertically. Another wafer transfer device 33 can transfer the wafer W to a predetermined device located at the height of multiple layers 31 below those layers 31. Multiple wafer transfer areas 32 (see the areas arranged vertically in Figure 2) are provided to enable this transfer of wafers W. The number of wafer transfer devices 33 and the number of layers 31 corresponding to one wafer transfer device 33 can be arbitrarily selected, such as providing one wafer transfer device 33 for each layer 31.

[0021] Furthermore, a shuttle transport device (not shown) may be provided in the wafer transport area 32 or in the first block G1 or the second block G2. The shuttle transport device transports the wafer W linearly between a space adjacent to one side of the processing station 3 and another space adjacent to the opposite side.

[0022] Interface station 4 includes a fifth block G5 equipped with multiple transfer devices, a wafer transport device 41, and a wafer transport device 42. Interface station 4 transports wafers W between the fifth block G5, where wafers W are transferred by wafer transport device 33, and the exposure apparatus using wafer transport device 41 or wafer transport device 42. For this purpose, wafer transport devices 41 and 42 are each equipped with drive mechanisms in directions such as the X direction, Y direction, up and down direction, and around the vertical axis (θ direction) as needed, and may be equipped with drive mechanisms in all directions. At least one of wafer transport devices 41 and 42 can support the wafer W and transport the wafer W between the transfer devices in the fifth block G5 and the exposure apparatus.

[0023] A cleaning device for cleaning the surface of the wafer W and the aforementioned peripheral exposure device U4 may be provided within the interface station 4 in a location accessible by either the wafer transport device 41 or the wafer transport device 42. In one example, in Figure 1, the cleaning device and the peripheral exposure device U4 may be provided in the location indicated by the dashed rectangle within the interface station 4.

[0024] The wafer processing system 1 described above is equipped with a control device 100. The control device 100 is, for example, a computer and has a program storage unit (not shown). The program storage unit stores a program that controls the processing of wafers W in the wafer processing system 1. The program storage unit also stores a program that controls the operation of the various processing devices and transport devices and other drive systems to realize wafer processing in the wafer processing system 1. Note that the above program may have been recorded on a storage medium H that is readable by the computer and installed from the storage medium H to the control device 100.

[0025] <Operation of the wafer processing system> The wafer processing system 1 is configured as described above. Next, an example of wafer processing performed using the wafer processing system 1 configured as described above will be explained.

[0026] First, a cassette C containing multiple wafers W is brought into the cassette station 2 of the wafer processing system 1 and placed on the cassette tray 21. Next, each wafer W in the cassette C is sequentially removed by the wafer transport device 22 or wafer transport device 23 and transported to the transfer device of the third block G3.

[0027] The wafer W, transported to the transfer device in the third block G3, is supported by the wafer transfer device 33 and transported to a hydrophobic treatment device located in the second block G2, where a hydrophobic treatment is performed. Next, the wafer transfer device 33 transports it to a resist film forming device, where a resist film is formed on the wafer W. After that, it is transported to a heat treatment device for pre-baking, and then transported to the transfer device in the fifth block G5. Note that, as shown in Figures 1 and 2, if there are multiple processing stations 3, the wafer W is first placed in the transfer device of the fourth block G4 before being transported to the transfer device of the fifth block G5, and then transferred between the multiple wafer transfer devices 33. The wafer W is also transported by the wafer transfer device 33 to the peripheral exposure device U4, where exposure treatment is performed on the peripheral region of the wafer W.

[0028] The wafer W, transported to the transfer device of the fifth block G5, is then transported by wafer transport devices 41 and 42 to the exposure device connected to the interface station 4, where it is exposed in a predetermined pattern. The wafer W may be cleaned in a cleaning device before the exposure process.

[0029] The exposed wafer W is transported to the transfer device for the fifth block G5 by wafer transport devices 41 and 42. It is then transported to the heat treatment device by wafer transport device 33 for post-exposure baking.

[0030] The wafer W, which has been baked after exposure, is transported by the wafer transport device 33 to the developing device and developed. After development is complete, the wafer W is transported by the wafer transport device 33 to the heat treatment device U2 and subjected to post-bake treatment.

[0031] Subsequently, the wafer W is transported by the wafer transport device 33 to the transfer device of the third block G3, and then transported by the wafer transport device 22 or wafer transport device 23 of the cassette station 2 to the cassette C on the predetermined cassette mounting table 21. In this way, the series of photolithography processes is completed. Alternatively, a resist film may be formed on at least the peripheral region of the wafer W before or after exposure in the exposure apparatus, and development may be performed in the developing apparatus after the resist film is exposed in the peripheral exposure apparatus U4.

[0032] <Liquid treatment equipment> Next, with reference to Figure 3, a liquid processing apparatus for forming a coating using a processing liquid will be described as an example of a film processing apparatus U1. In this disclosure, the film of the processing liquid formed by applying the processing liquid, and the film obtained by heat-treating the film of the processing liquid, are collectively referred to as "coating." The film processing apparatus U1 includes, for example, a rotating holding unit 45 and a liquid supply unit 50.

[0033] The rotating holding unit 45 includes a rotating drive unit 46, a shaft 47, and a holding unit 48. The rotating drive unit 46 operates based on an operation signal from the control device 100 and rotates the shaft 47. The rotating drive unit 46 includes a power source such as an electric motor. The holding unit 48 is provided at the tip of the shaft 47. A wafer W can be placed on the holding unit 48. The holding unit 48 is configured to hold the wafer W in a substantially horizontal position, for example by suction. That is, the holding unit 48 rotates the wafer W around a central axis (rotation axis) perpendicular to the surface Wa of the wafer W, while the wafer W is in a substantially horizontal position.

[0034] The liquid supply unit 50 is configured to supply a processing liquid L to the surface Wa of the wafer W. The processing liquid L is, for example, a resist liquid for forming a resist film (hereinafter referred to as "processing liquid Lr"). The resist material contained in the processing liquid Lr may be a positive-type resist material or a negative-type resist material. A positive-type resist material is a resist material in which the exposed areas dissolve and the unexposed areas remain. A negative-type resist material is a resist material in which the unexposed areas dissolve and the exposed areas remain. In the following explanation, we will use the case where the processing liquid L is processing liquid Lr and the resist material contained in the processing liquid Lr is a negative-type resist material as an example.

[0035] The liquid supply unit 50 includes a liquid source 51, a pump 52, a valve 53, a nozzle 54, piping 55, and a drive mechanism 56. The liquid source 51 functions as a source for supplying the processing liquid Lr. The pump 52 operates based on an operating signal from the control device 100, drawing the processing liquid Lr from the liquid source 51 and sending it to the nozzle 54 via the piping 55 and valve 53.

[0036] The nozzle 54 is positioned above the wafer W such that its discharge port faces the surface Wa of the wafer W. The nozzle 54 is configured to discharge the processing liquid Lr, which is sent out by the pump 52, onto the surface Wa of the wafer W. The piping 55 connects the liquid source 51, the pump 52, the valve 53, and the nozzle 54 in that order from upstream. The drive mechanism 56 operates based on an operation signal from the control device 100 and is configured to move the nozzle 54 horizontally and vertically.

[0037] In the film processing apparatus U1, the wafer W on which the processing liquid Lr film has been formed is transported to one of the heat processing apparatuses U2, which then performs heat treatment on the wafer W. As a result, a resist film is formed on the surface Wa of the wafer W. As described above, the film processing apparatus U1 and the heat processing apparatus U2 may constitute a film forming unit that forms a resist film, which is one type of coating.

[0038] <Inspection equipment> Next, an example of the inspection apparatus U3 will be described with reference to Figures 4 and 5. The inspection apparatus U3 (inspection unit) is a device that generates one or more types of image information for inspecting the condition of the wafer W. The inspection apparatus U3 includes, for example, a housing 68, a rotating holding unit 60, a surface imaging unit 70, and a peripheral imaging unit 80. The rotating holding unit 60, the surface imaging unit 70, and the peripheral imaging unit 80 are arranged inside the housing 68. An inlet / outlet 69 is formed in one side wall of the housing 68 for loading the wafer W into the housing 68 and for loading the wafer W out of the housing 68.

[0039] The rotating holding unit 60 is a unit that holds and rotates the wafer W, moving the wafer W within the housing 68. The rotating holding unit 60 includes a holding base 61, drive mechanisms 62 and 63, and guide rails 64. The holding base 61 is a suction chuck that holds the wafer W in a substantially horizontal position, for example, by suction.

[0040] The drive mechanism 62 includes a power source, such as an electric motor, and rotates the holder 61. That is, the drive mechanism 62 rotates the wafer W held on the holder 61. The wafer W may be placed on the holder 61 such that the central axis of rotation by the drive mechanism 62 substantially coincides with the center of the wafer W. The drive mechanism 62 may include an encoder for detecting the rotational position (rotation angle) of the holder 61 around the central axis. In this case, the imaging position of the wafer W by the surface imaging unit 70 and the peripheral imaging unit 80 can be associated with the rotational position of the wafer W. If the wafer W includes an indicator portion (for example, a notch) that represents a reference position in the circumferential direction, the orientation of the wafer W can be determined based on the indicator portion determined by the surface imaging unit 70 and the peripheral imaging unit 80 and the rotational position detected by the encoder.

[0041] The drive mechanism 63 is, for example, a linear actuator, which moves the holder 61 along the guide rail 64. That is, the drive mechanism 63 transports the wafer W held on the holder 61 between one end and the other end of the guide rail 64. Therefore, the wafer W held on the holder 61 is movable between a first position closer to the loading / unloading port 69 and a second position closer to the peripheral imaging unit 80. The guide rail 64 extends linearly (for example, in a straight line) within the housing 68.

[0042] The surface imaging unit 70 includes a camera 71 and an illumination module 72. The camera 71 includes a lens and an image sensor (e.g., a CCD image sensor, a CMOS image sensor, etc.). The camera 71 faces the illumination module 72 in the horizontal direction. That is, the camera 71 and the illumination module 72 are aligned along the horizontal direction.

[0043] The lighting module 72 includes a half-mirror 73 and a light source 74. The half-mirror 73 is positioned within the housing 68 at an angle of approximately 45° to the horizontal. The half-mirror 73 is located above the middle portion of the guide rail 64. The half-mirror 73 is rectangular in shape and extends so as to intersect the direction of extension of the guide rail 64 when viewed from above. The length of the half-mirror 73 is set to be greater than the diameter of the wafer W.

[0044] The light source 74 is located above the half mirror 73. Light emitted from the light source 74 passes through the entire half mirror 73 and is directed downwards (towards the guide rail 64). After passing through the half mirror 73, the light is reflected by an object located below the half mirror 73, then reflected again by the half mirror 73, passes through the lens of the camera 71, and enters the image sensor of the camera 71. In other words, the camera 71 can image objects present in the illumination area of ​​the light source 74 via the half mirror 73. For example, when the holder 61 that holds the wafer W moves along the guide rail 64 by the drive mechanism 63, the camera 71 can image the surface Wa of the wafer W as it passes through the illumination area of ​​the light source 74. The image data captured by the camera 71 is transmitted to the control device 100.

[0045] The peripheral imaging unit 80 includes a camera 81, an illumination module 82, and a mirror member 83. The camera 81 includes a lens and an image sensor (e.g., a CCD image sensor, a CMOS image sensor, etc.). The camera 81 faces the illumination module 82 in the horizontal direction. That is, the camera 81 and the illumination module 82 are aligned along the horizontal direction.

[0046] The lighting module 82 is positioned above the wafer W held on the holder 61. The lighting module 82 includes a light source 84 and a half mirror 85. The half mirror 85 is positioned at an angle of approximately 45° to the horizontal, as shown in Figure 5. The mirror member 83 is positioned below the lighting module 82, as shown in Figures 4 and 5. The mirror member 83 includes a body made of an aluminum block and a reflective surface.

[0047] When the wafer W held on the holder 61 is in the second position, the reflective surface of the mirror member 83 faces the end face Wb of the wafer W held on the holder 61 and the peripheral region on the back surface of the wafer W. The reflective surface of the mirror member 83 is inclined with respect to the rotation axis of the holder 61. The reflective surface of the mirror member 83 is mirror-finished. For example, a mirror sheet may be attached to the reflective surface, aluminum plating may be applied, or aluminum material may be deposited on it. This reflective surface is a curved surface that is recessed radially outward from the wafer W held on the holder 61.

[0048] In the lighting module 82, light emitted from the light source 84 passes entirely through the half mirror 85 and is directed downwards. A portion of the light that passes through the half mirror 85 is reflected at the peripheral region of the wafer surface Wa. This reflected light does not go towards the reflective surface of the mirror member 83, but is further reflected by the half mirror 85 before being incident on the image sensor of the camera 81.

[0049] Meanwhile, some of the light that passes through the half-mirror 85 is reflected by the reflective surface of the mirror member 83 located below the half-mirror 85. When the wafer W held on the holder 61 is in the second position, the reflected light reflected by the reflective surface of the mirror member 83 is mainly reflected by the end face Wb of the wafer W. This reflected light is sequentially reflected by the reflective surface of the mirror member 83 and the half-mirror 85 before being incident on the image sensor of the camera 81.

[0050] In this way, the reflected light from the peripheral region of the wafer surface Wa and the reflected light from the end face Wb of the wafer W enter the image sensor of the camera 81 via different optical paths. That is, when the wafer W held on the holder 61 is in the second position, the camera 81 is configured to image both the peripheral region of the wafer surface Wa and the end face Wb of the wafer W, and to generate an image of the peripheral region of the surface Wa and an image of the end face Wb. The image data captured by the camera 81 is transmitted to the control device 100. The inspection device U3 can be configured in any way as long as it can image the peripheral region of the surface Wa and generate an image of the peripheral region. The peripheral region of the surface Wa can also be called the surrounding region (peripheral region) of the surface Wa, and means an annular region including the periphery of the surface Wa and the vicinity of the periphery. The peripheral imaging unit 80 may be capable of generating an image of the end face Wb without imaging the peripheral region of the surface Wa, and the inspection apparatus U3 may have an imaging unit capable of generating an image of the end face Wb separately from the peripheral imaging unit 80. The amount of warpage of the wafer W may be measured from the image of the end face Wb that does not include the peripheral region of the surface Wa.

[0051] <Peripheral exposure equipment> Next, the peripheral exposure apparatus U4 will be described with reference to Figures 6(a) and 6(b). The peripheral exposure apparatus U4 (peripheral exposure section) is an apparatus that exposes the peripheral region of the surface Wa of the wafer W. The peripheral exposure apparatus U4 does not expose regions located inside the peripheral region. The peripheral exposure apparatus U4 includes, for example, a rotating holding unit 110 and an exposure unit 120. The rotating holding unit 110 and the exposure unit 120 are arranged within the housing of the peripheral exposure apparatus U4.

[0052] The rotating holding unit 110 is a unit that holds and rotates the wafer W. The rotating holding unit 110 includes a holding base 111 (holding part), drive mechanisms 112 and 113, and guide rails 114. The holding base 111 is a suction chuck that holds the wafer W in a substantially horizontal position, for example, by suction.

[0053] The drive mechanism 112 includes a power source, such as an electric motor, and rotates the holder 111. That is, the drive mechanism 112 rotates the wafer W held on the holder 111. The drive mechanism 112 may also include an encoder for detecting the rotational position of the holder 111. In this case, the exposure position of the wafer W by the exposure unit 120 can be associated with the rotational position of the wafer W. The holder 111 holds the back surface of the wafer W such that the rotational center of the wafer W by the drive mechanism 112 substantially coincides with the center of the wafer W.

[0054] The drive mechanism 113 is, for example, a linear actuator, which moves the holder 111 along the guide rail 114. That is, the drive mechanism 113 transports the wafer W held on the holder 111 between one end and the other end of the guide rail 114. The guide rail 114 extends linearly (for example, in a straight line) within the housing of the peripheral exposure apparatus U4, with one end located near the exposure unit 120. When the holder 111 holding the wafer W is at one end of the guide rail 114, the exposure unit 120 may perform exposure on the wafer W.

[0055] The exposure unit 120 is a unit that irradiates the peripheral region of the surface Wa of the wafer W with exposure light. The exposure unit 120 irradiates the peripheral region of the surface Wa with exposure light while the wafer W held on the holder 111 is rotating. The exposure unit 120 includes a light source 121, an optical system member 122, a mask member 123, and a drive mechanism 124. The light source 121 may be positioned vertically above the peripheral region of the surface Wa of the wafer W, which is positioned in an exposureable location. The light source 121 irradiates downward with energy rays (e.g., ultraviolet light) that contain wavelength components capable of exposing the resist film. The light source 121 may be, for example, an ultra-high pressure UV lamp, a high pressure UV lamp, a low pressure UV lamp, or an excimer lamp.

[0056] The optical system member 122 is located below the light source 121. The optical system member 122 is composed of one or more lenses. The optical system member 122 converts the exposure light from the light source 121 into substantially parallel light and irradiates the mask member 123 with it. The light source 121 and the optical system member 122 function as irradiation units that irradiate with exposure light. The mask member 123 has an aperture 123a formed therein for adjusting the exposure area (exposure range). The parallel light from the optical system member 122 passes through the aperture 123a and irradiates the peripheral region of the surface Wa of the wafer W held on the holder 111. When developer is supplied to the resist film whose peripheral region has been irradiated with exposure light, the region that has not been irradiated with exposure light is removed.

[0057] The drive mechanism 124 includes a power source, such as an electric motor, and is connected to the mask member 123. The drive mechanism 124 operates based on an operation signal from the control device 100 and moves the mask member 123 along the radial direction of the wafer W. The radial direction of the wafer W is the radial direction of a circle around the center of the wafer W. As the mask member 123 moves along the radial direction by the drive mechanism 124, the radial size of the area to which exposure light reaches the peripheral region of the resist film (hereinafter simply referred to as the "exposure width") changes.

[0058] The mask member 123 is driven by the drive mechanism 124 within a range of movement in the radial direction in which the outer edge of the surface Wa is included within the region where the exposure light reaches the surface Wa. In this case, the exposure width is determined by the radial distance between the outer edge of the surface Wa and the point closest to the center within the range where the exposure light reaches the surface Wa. Furthermore, when the position of the mask member 123 relative to the center of the wafer W changes in the radial direction, the radial position of the point closest to the center within the range where the exposure light reaches the surface Wa changes.

[0059] The method for changing the exposure width is not limited to driving by the drive mechanism 124. The mask member 123 may have a shutter 125, as shown in Figure 6(b). Figure 6(b) schematically shows a cross-section when the wafer W is cut along the radial direction, and the optical system member 122 is omitted. The shutter 125 is a member that can adjust the opening degree of the aperture 123a provided in the mask member 123. The opening degree of the aperture 123a refers to the ratio of the area through which exposure light from the light source 121 and the optical system member 122 passes, relative to the total area of ​​the aperture 123a.

[0060] The mask member 123 may be fixed in a position where the exposure light passing through the aperture 123a reaches the outer edge of the surface Wa and the region inside that outer edge. A drive unit is connected to the shutter 125, and the shutter 125 is movable along the radial direction. The shutter 125 can cover the region of the aperture 123a closer to the center of the wafer W. The radial position of the shutter 125 changes the opening of the aperture 123a, and as a result, the exposure width changes. That is, the radial position of the shutter 125 changes the radial position of the closest point to the center of the range in which the exposure light reaches the surface Wa.

[0061] The method for changing the exposure width is not limited to the drive mechanism 124 and the shutter 125. The peripheral exposure apparatus U4 may change the exposure width by moving the holder 111 that holds the wafer W along the radial direction of the wafer W relative to the mask member 123. In this case, the mask member 123 may be fixed in a predetermined position. By moving the holder 111 (wafer W) radially relative to the mask member 123, the ratio of the region where the exposure light that has passed through the aperture 123a reaches the wafer W and the region where the exposure light does not reach the wafer W changes when the cross-section is observed in the radial direction. That is, the radial position of the point closest to the center of the range in which the exposure light reaches the surface Wa changes depending on the radial position of the wafer W relative to the mask member 123.

[0062] <Control device functions> Figure 7 shows a block diagram illustrating an example of the functional configuration of the control device 100. The control device 100 has, as a functional configuration (hereinafter referred to as "functional modules"), an image information acquisition unit 201, an edge information generation unit 202, an exposure map setting unit 203, a map storage unit 204, a film formation control unit 205, an exposure control unit 206, and a result determination unit 207. The processes performed by these functional modules correspond to the processes performed by the control device 100.

[0063] The image information acquisition unit 201 is a functional module that acquires an image obtained by imaging the peripheral region of the surface Wa of a wafer W in a state in which a coating F1 (first coating) is formed on the surface Wa. Hereinafter, the image obtained by imaging the peripheral region of the surface Wa in a state in which a coating F1 (first coating) is formed on the surface Wa will be referred to as the "peripheral image" (see also Figure 11(a)). The image information acquisition unit 201 acquires the peripheral image from the inspection device U3, for example. The coating F1 is a coating formed in the lower layer of the resist film (hereinafter referred to as "coating F2") formed at least in the peripheral region. The coating F1 may be any one of multiple layers of films formed beneath the coating F2. Other films may exist between the coating F1 and the coating F2, or there may be no other films between the coating F1 and the coating F2, and the coating F2 may be formed on the coating F1.

[0064] The edge information generation unit 202 generates edge information based on the peripheral imaging image, showing the relationship between the circumferential position around the center of the wafer W and the outer edge position of the coating F1 in the radial direction of the wafer W. The circumferential position is determined, for example, by the angle from an index portion (reference position) such as the notch mentioned above. The outer edge position of the coating F1 is determined, for example, by the shortest radial distance between the center of the wafer W and the outer edge of the coating F1. The outer edge of the coating F1 is located inside the outer edge of the surface Wa of the wafer W. Therefore, the outer edge position of the coating F1 may also be determined by the shortest radial distance between the theoretical position of the outer edge of the surface Wa and the outer edge of the coating F1.

[0065] The edge information generation unit 202 may calculate the outer edge position of the coating F1 at predetermined angles in the circumferential direction when generating edge information. The edge information generation unit 202 calculates the outer edge position of the coating F1 at any angle (e.g., 1°) between 0.5° and 5°. The angle unit (e.g., 1°) used to calculate the outer edge position of the coating F1 can also be called the resolution of the edge information. The position of the index portion on the wafer W may be set to 0°. The edge information generation unit 202 may calculate the outer edge position of the coating F1 from the peripheral image using any image processing method.

[0066] The position of the outer edge of the coating F1 varies depending on the circumferential position, that is, the angle from the indicator, and various other factors. For example, in some places on the outer edge of the coating F1, a missing portion may be formed that is recessed inward from the average position of the outer edge. The outer edge of the coating F1 may also be a continuous edge as the circumferential position changes. That is, when viewing the surface Wa from above, and observing the outer edge of the coating F1 for one full rotation along the circumferential direction, there are no discontinuous sections on the outer edge of the coating F1 (the outer edge of the coating F1 is continuous).

[0067] The exposure map setting unit 203 is a functional module that sets an exposure map showing the relationship between the circumferential position around the center of the wafer W and the set value of the exposure width in the radial direction of the wafer W, based on the edge information described above. The exposure map setting unit 203 may set the exposure width at predetermined angles in the circumferential direction in the exposure map. For example, the exposure map setting unit 203 sets the exposure width at any angle (e.g., 1°) between 0.5° and 5°. The angle unit (e.g., 1°) used to set the exposure width can also be called the resolution in the exposure map. The resolution in the edge information described above may coincide with the resolution in the exposure map.

[0068] The exposure map setting unit 203 may set the exposure map so that, when setting the exposure map based on edge information, the position of one end of the wafer W closer to the center of the exposure range is shifted by a certain amount from the outer edge position of the coating F1 indicated by the edge information at predetermined angles in the circumferential direction (for example, every 1°). In this case, even if the circumferential position (angle) is different, the difference between the outer edge position of the coating F1 in the edge information and the position of one end of the wafer W closer to the center of the exposure range remains constant. The map storage unit 204 is a functional module that stores the exposure map set by the exposure map setting unit 203.

[0069] The film formation control unit 205 is a functional module that controls the film processing apparatus U1 and the heat processing apparatus U2 to form a film F2 (second film) on at least the peripheral region of the surface Wa after a peripheral imaging image has been obtained. The film formation control unit 205 may control the film processing apparatus U1 to form a film F2 on the entire surface Wa, or it may control the film processing apparatus U1 to form a film F2 on the peripheral region without forming a film F2 on the central portion including the center of the wafer W.

[0070] The exposure control unit 206 is a functional module that controls the peripheral exposure device U4 to expose the coating F2 in the peripheral region according to the exposure map stored in the map storage unit 204. The exposure control unit 206 controls the peripheral exposure device U4 to expose the coating F2 with an exposure width set for that circumferential position.

[0071] The exposure control unit 206 may change the exposure width according to the circumferential position by moving the mask member 123 with the drive mechanism 124. The exposure control unit 206 may change the exposure width according to the circumferential position by changing the opening degree of the opening 123a of the mask member 123 by moving the shutter 125. The exposure control unit 206 may change the exposure width according to the circumferential position by moving the holder 111 that holds the wafer W in the radial direction.

[0072] The result determination unit 207 is a functional module that determines whether the exposure result is normal or not according to the exposure map. The result determination unit 207 makes a determination using an image (hereinafter referred to as the "determination image") obtained by imaging the peripheral region of the surface Wa after the exposed film F2 has been developed. The determination image (second image) may be generated by the inspection device U3 or acquired by the image information acquisition unit 201. The peripheral image and the determination image may be obtained by the same inspection device U3 or by different inspection devices U3.

[0073] The result determination unit 207 generates cut information based on the determination image, showing the relationship between the circumferential position and the inner edge position of the film F2 (the annular film F2 after development). The inner edge position of the film F2 may be determined by the radial distance from the theoretical position of the outer edge of the surface Wa. Since the film F2 is formed up to the outer edge of the surface Wa, the inner edge position of the annular film F2 represents the exposure width. The result determination unit 207 determines whether the exposure to the film F2 is normal based on the result of comparing either the edge information or the exposure map with the cut information.

[0074] <Control device hardware configuration> Figure 8 illustrates the hardware configuration of the control device 100. The control device 100 has, for example, a circuit 210. The circuit 210 has one or more processors 211, a memory 212, a storage 213, and an input / output port 214. The storage 213 has a storage medium that can be read by a computer, such as a hard disk. The storage medium stores a program for controlling the wafer processing system 1. That is, the storage 213 (or storage medium) functions as the program storage unit described above. The storage medium may be a removable medium such as a non-volatile semiconductor memory, a magnetic disk, or an optical disk.

[0075] Memory 212 temporarily stores the program loaded from the storage medium of storage 213 and the calculation results by processor 211. Processor 211 works in cooperation with memory 212 to execute the above program, thereby configuring each functional module of the control device 100. Input / output ports 214 input and output electrical signals to and from the inspection device U3, film processing device U1, heat processing device U2, peripheral exposure device U4, etc., according to commands from processor 211.

[0076] If the control device 100 is composed of multiple computers, each functional module may be implemented by an individual computer. Alternatively, each of these functional modules may be implemented by a combination of two or more computers. In these cases, the multiple computers may be connected to each other in a manner that allows them to communicate with one another, and may coordinately execute control in the wafer processing system 1. The hardware configuration of the control device 100 is not necessarily limited to configuring each functional module by program. For example, each functional module of the control device 100 may be composed of a dedicated logic circuit or an ASIC (Application Specific Integrated Circuit) that integrates such circuits.

[0077] [Substrate Processing Method] Next, an example of a substrate processing method performed in wafer processing system 1 will be described with reference to Figures 9 to 14. In the following description, we will explain in the case where a coating F1, which serves as the base film, already has an uneven pattern formed on it, and a resist film, coating F2, is formed on the peripheral region of wafer W, where coating F1 is formed on the surface Wa. Another coating, coating F0, may be formed beneath coating F1, as shown in Figure 10(a), etc.

[0078] This substrate processing method includes: imaging the peripheral region of the surface Wa of a wafer W on which a coating F1 is formed to obtain a peripheral image; and generating edge information based on the peripheral image that shows the relationship between the circumferential position around the center of the wafer W and the outer edge position of the coating F1 in the radial direction of the wafer W. The substrate processing method further includes: setting an exposure map based on the edge information that shows the relationship between the circumferential position and a set value for the exposure width in the radial direction of the wafer W; forming a coating F2 on at least the peripheral region of the surface Wa after obtaining the peripheral image; and exposing the coating F2 in the peripheral region according to the exposure map.

[0079] As shown in Figure 9, first, the control device 100 performs step S01. The control device 100 controls the wafer processing system 1 to form a coating F1 on the surface Wa of the wafer W, for example. Instead of forming the coating F1 in the wafer processing system 1, the control device 100 may control the wafer processing system 1 to accept the wafer W in which the coating F1 has been formed on the surface Wa by another processing system. In the coating F1 formed on the wafer W, the peripheral portion is removed so that the outer edge of the coating F1 is located inside the outer edge of the surface Wa. The wafer W with the coating F1 formed on the surface Wa is then transported to the inspection device U3.

[0080] Next, the control device 100 executes step S02. In step S02, for example, the image information acquisition unit 201 causes the inspection device U3 to image the peripheral region of the surface Wa of the wafer W on which the coating F1 is formed, and acquires image data showing the peripheral image from the inspection device U3. Figure 11(a) shows an example of a peripheral image. Note that in the peripheral image shown in Figure 11(a), the circumferential position is converted to the horizontal direction on the image, and the radial direction is converted to the vertical direction on the image.

[0081] Next, the control device 100 executes step S03. In step S03, for example, the edge information generation unit 202 generates edge information (edge ​​profile) from the image data obtained in step S01, showing the relationship between the circumferential position and the outer edge position of the coating F1 in the radial direction. The edge information generation unit 202 may calculate the outer edge position of the coating F1 in the radial direction from the image data obtained in step S01 at predetermined angle intervals (for example, every 1°) around the center of the wafer W.

[0082] Figure 11(b) is a graph showing an example of edge information. In Figure 11(b), the horizontal axis of the graph, "Xθ(°)", represents the circumferential position (or angle) around the center of the wafer W. The vertical axis of the graph, "Xr(mm)", represents the radial position from the center of the wafer W. "Eo" represents the theoretical radial position of the outer edge of the wafer W surface Wa, and "R" represents the value obtained by subtracting a predetermined value from Eo. In one example, Eo is 150 mm, and R is any value between 140 mm and 148 mm. "E1" is information showing the calculated radial position (outer edge position) of the outer edge of the coating F1.

[0083] In the edge information, for example, the outer edge position E1 is obtained by calculating the outer edge position of the coating F1 at each circumferential position while changing the circumferential position Xθ by 1°. The edge information generation unit 202 may also calculate the outer edge position of the coating F1 from, for example, the difference in pixel values ​​between adjacent pixels on the image. The edge information generation unit 202 may also associate the circumferential position with the outer edge position of the coating F1 by identifying the position of an indicator formed on the wafer W on the image.

[0084] Next, the control device 100 executes step S04. In step S04, for example, the exposure map setting unit 203 sets an exposure map that shows the relationship between the circumferential position Xθ around the center of the wafer W and the set value of the exposure width in the radial direction of the wafer W, based on the edge information generated in step S03. The set exposure map is stored in the map storage unit 204. The exposure map setting unit 203 may also set the exposure width by setting the position of one end of the exposure range that is closer to the center of the wafer W at predetermined angle intervals (for example, every 1°) around the center of the wafer W. As the position of one end of the exposure range that is closer to the center of the wafer W changes, the distance between the position of that end and the outer edge Eo of the surface Wa changes, and the exposure width changes.

[0085] The exposure map setting unit 203 may set the position of one end of the wafer W near the center of the exposure range at predetermined angle intervals so as to follow the shape of the outer edge position E1 indicated by the edge information. Figure 12(a) shows a visualized example of exposure map setting. Figure 12(a) shows a graph representing the change in the position of one end of the wafer W near the center of the exposure range with respect to the circumferential position. The distance between the position of one end of the wafer W near the center of the exposure range and the outer edge Eo of the surface Wa is the exposure width, and "Ees" is information indicating the exposure width setting value according to the circumferential position.

[0086] The exposure map setting unit 203 sets the exposure map (exposure width Ees) such that the trend of change in the exposure width according to the circumferential position follows the trend of change in the outer edge position of the coating F1 indicated by the edge information according to the circumferential position. For example, the exposure map setting unit 203 sets the exposure map such that, at any circumferential position Xθ, one end of the wafer W closest to the center of the exposure range is located inside the outer edge of the coating F1, and the difference between the above end and the outer edge of the coating F1 is smaller than a predetermined value. The above predetermined value may be about 0.5 mm to 3 mm, or about 0.5 mm to 2 mm.

[0087] By adjusting the exposure map settings to match the shape of the outer edge of the film F1 formed beneath the film F2, the exposure width setting differs depending on the circumferential position Xθ. In the example shown in Figure 12(a), the exposure width is set to "w1" in one range of the circumferential position Xθ, to "w2" in another range, and to "w3" in yet another range. Furthermore, even between two of the exposure widths w1, w2, and w3 (for example, between the transition from w1 to w2), the exposure width is set in accordance with the change in the outer edge of the film F1.

[0088] Figure 12(b) schematically shows the relationship between the annular film F2 and film F1 after exposure and development. By setting the exposure width Ees along the outer edge of film F1, as shown in Figure 12(b), the annular film F2 after exposure and development is formed to completely cover the outer edge of film F1, and the inner edge shape of film F2 is formed along the outer edge of film F1.

[0089] Figure 13 shows an example different from Figures 11(b) and 12(a) regarding the calculation result of the outer edge position of the coating F1 (outer edge position E1) and the setting result of the exposure width in the exposure map (exposure width Ees). Unlike Figures 11(b) and 12(a), in Figure 13, the vertical axis represents the radial distance from the outer edge Eo of the surface Wa. As shown in Figure 13, the exposure map setting unit 203 may set the exposure width such that, at predetermined angles (for example, every 1°), the position of one end of the wafer W near the center of the exposure range is shifted by a constant value from the outer edge position of the coating F1 indicated by the edge information. In this case, the difference between the exposure width Ees and the outer edge position E1 is constant at any circumferential position Xθ. In other words, over the entire range from 0° to 360° around the center of the wafer W, the exposure width Ees is offset by a constant value from the outer edge position E1. The constant value for the offset may be approximately 0.5 mm to 5.0 mm, or it may be approximately 0.5 mm to 3.0 mm.

[0090] Table 1 below shows an example of an exposure map when the exposure width is set in 1° increments. Note that the exposure map shown in Table 1 is provided as an example to facilitate understanding of the contents of this disclosure.

[0091] [Table 1]

[0092] Returning to Figure 9, the control device 100 then executes step S05. Before step S05, the wafer W, with the coating F1 formed on it, is transported from the inspection device U3 to the film processing device U1. In step S05, for example, the film formation control unit 205 controls the film processing device U1 to apply the processing liquid Lr to the entire surface Wa of the wafer W, as shown in Figure 10(a). After the wafer W is transported to the heat processing device U2, the film formation control unit 205 controls the heat processing device U2 to heat the coating film of the processing liquid Lr, as shown in Figure 10(b). As a result, the coating F2 before exposure and development is formed on the entire surface Wa. After that, the wafer W is transported from the heat processing device U2 to the peripheral exposure device U4.

[0093] Next, the control device 100 executes step S06. In step S06, for example, the exposure control unit 206 controls the peripheral exposure device U4 to expose the coating F2 in the peripheral region of the surface Wa according to the exposure map set in step S04. As shown in Figure 10(c), the exposure control unit 206 rotates the wafer W held on the holder 111 by the rotation holding unit 110 and irradiates the outer peripheral region of the surface Wa with exposure light using the exposure unit 120. The exposure control unit 206 controls the peripheral exposure device U4 so that the coating F2 is exposed with the set exposure width at each angle for which the exposure width is set in the exposure map.

[0094] Using the example shown in Table 1, the exposure control unit 206 controls the peripheral exposure apparatus U4 so that, for example, the exposure width is 1.1 mm at a circumferential position Xθ of 1°, and the exposure width is 1.2 mm at a circumferential position Xθ of 2°. The exposure control unit 206 may continue to irradiate the wafer W with exposure light from the exposure unit 120 while continuing to rotate the wafer W without stopping its rotation. In this case, while the circumferential position Xθ transitions from 1° to 2°, the exposure control unit 206 moves the mask member 123 with the drive mechanism 124 so that, for example, the exposure width changes from 1.1 mm to 1.2 mm. The exposure control unit 206 may change the speed at which it moves the mask member 123 between two consecutive steps in the exposure map, according to the change in exposure width. After exposure of the peripheral region of the coating F2 is performed according to the exposure map, the wafer W is transported from the peripheral exposure apparatus U4 to the heat treatment apparatus U2.

[0095] Next, the control device 100 executes step S07. In step S07, for example, the film formation control unit 205 controls the heat treatment apparatus U2 to perform pre-development heat treatment on the wafer W (film F2), as shown in Figure 10(d). After the pre-development heat treatment, the wafer W is transported from the heat treatment apparatus U2 to the film treatment apparatus U1 that performs development.

[0096] Then, the film formation control unit 205 controls the film processing apparatus U1 to supply developer Ld to the surface Wa and develop the film F2, as shown in Figure 10(e). This removes the parts of the film F2 that have not been irradiated with light for exposure. After that, the developer Ld is washed away, and an annular film F2 is formed on the outer peripheral region of the surface Wa, as shown in Figure 10(f). After development, the wafer W is transported from the film processing apparatus U1 to the inspection apparatus U3.

[0097] Next, the control device 100 executes step S08. In step S08, for example, the result determination unit 207 performs an inspection process with respect to the exposure of the coating F2. In one example, the result determination unit 207 uses the inspection device U3 to image the peripheral region of the wafer W after exposure and development, and acquires image data for inspection processing (the judgment image above) from the inspection device U3. From the image data for inspection processing, the result determination unit 207 generates cut information that shows the relationship between the circumferential position Xθ and the inner edge position of the coating F2 in the radial direction of the wafer W. The result determination unit 207 may calculate the inner edge position of the coating F2 in the radial direction of the wafer W from the image data for inspection processing at predetermined angles (for example, every 1°) around the center of the wafer W.

[0098] Figure 14(a) is a graph showing an example of cut information. In Figure 14(a), the vertical axis represents the radial distance between the outer edge Eo of the surface Wa and the inner edge position of the coating F2, i.e., the radial width of the coating F2. "Eer" is information that shows the calculated radial position of the inner edge of the coating F2 (inner edge position). If peripheral exposure according to the exposure map is normal, the inner edge position Eer will approximately coincide with the exposure width Ees shown in Figure 13, or will be offset by a predetermined value from the outer edge position E1 with respect to the coating F1 at any circumferential position Xθ. Therefore, the result determination unit 207 can determine whether the result of peripheral exposure is normal or not by comparing the exposure width Ees and the inner edge position Eer. The result determination unit 207 can also determine whether the result of peripheral exposure is normal or not by comparing the outer edge position E1 and the inner edge position Eer.

[0099] In one example, the result determination unit 207 calculates the difference between the inner edge position Eer and the outer edge position E1 for each predetermined angle around the center of the wafer W (for example, every 1°). Figure 14(b) is a graph showing the difference obtained by subtracting the outer edge position E1 from the inner edge position Eer. If the constant value offset from the outer edge position E1 is "OS", then if peripheral exposure is normal, the difference between the inner edge position Eer and the outer edge position E1 will be approximately constant regardless of the circumferential position Xθ.

[0100] On the other hand, if there is an abnormality in a certain area due to some factor, the difference between the inner edge position Eer and the outer edge position E1 will deviate from the constant offset value (OS), as shown in the area indicated by "A" in Figure 14(b). In this case, the result determination unit 207 can determine that exposure was not performed normally in the area indicated by "A". Furthermore, by looking at the difference between the outer edge position E1 (measured value) and the inner edge position Eer (measured value), rather than the difference between the exposure width Ees (set value) and the inner edge position Eer (measured value), it is also possible to confirm whether the inner edge position of the coating F2 is offset.

[0101] The control device 100 also performs the series of processes from steps S01 to S08 for each of the subsequent wafers W. The shape (state) of the outer edge of the coating F1 is likely to differ for each individual wafer W, and by repeating the above series of processes, an exposure map tailored to each individual wafer W can be set.

[0102] [Differentiation] The series of processes shown in Figure 9 is an example and can be modified as appropriate. In the above series of processes, the control device 100 may execute one step and the next step in parallel, or it may execute each step in a different order than the example described above. The control device 100 may also execute steps with content different from the example described above.

[0103] In the example described above, the treatment solution Lr was applied to the entire surface Wa when forming the coating F2 before exposure and development, but it is not necessary to apply the treatment solution Lr to the central part of the surface Wa. Figures 15(a) to 15(f) illustrate the substrate processing method when the coating film of the treatment solution Lr is formed only on the peripheral region of the surface Wa. The steps shown in Figures 15(a), 15(b), 15(c), 15(d), 15(e), and 15(f) correspond to the steps shown in Figures 10(a), 10(b), 10(c), 10(d), 10(e), and 10(f), respectively.

[0104] As shown in Figure 15(c), an annular film F2 is formed on the peripheral region of the surface Wa and its vicinity. The inner edge of film F2 is formed to be located inside the outer edge of film F1. Peripheral exposure is then performed on film F2 by a peripheral exposure apparatus U4 equipped with an exposure unit 120. By exposing and developing film F2, the unexposed portion (the inner part) of the annular film F2 is removed. Note that in the heat treatment shown in Figures 15(b) and 15(d), heat may be applied only to the peripheral region of wafer W, without applying heat to the central part of wafer W.

[0105] As shown in Figure 16(a), the coating F2 before exposure and development may be formed to cover not only the surface Wa of the wafer W but also the edge Wb. The peripheral exposure apparatus U4 may have an exposure unit 130 capable of exposing the edge Wb in addition to the exposure unit 120. Figure 16(b) schematically shows the coating F2 on the edge Wb before exposure and development, and Figure 16(c) schematically shows the coating F2 on the edge Wb after exposure and development. Figure 16(d) schematically shows the coating F2 after exposure and development. As shown in Figures 16(c) and 16(d), a portion of the coating F2 may be removed by exposure and development at the lower part of the edge Wb.

[0106] As described above, the inspection device U3 obtains an image of the end face Wb in addition to the peripheral region of the surface Wa. Therefore, the control device 100 may detect the condition of the substrate at the end face Wb from the image of the end face Wb. The exposure control unit 206 may then perform exposure on the end face Wb using the exposure unit 130 according to the condition of the substrate at the end face Wb. For example, the height of the area onto which the exposure light from the exposure unit 130 is applied may be adjusted according to the circumferential position Xθ, according to the condition of the substrate at the end face Wb.

[0107] In the example described above, the inner edge of the film F2 after exposure and development is located inside the outer edge of film F1, and film F2 is formed to conform to the shape of the outer edge of film F1. Alternatively, the inner edge of the film F2 after exposure and development may be located outside the outer edge of film F1, and film F2 may be formed to conform to the shape of the outer edge of film F1.

[0108] In the example described above, a negative-type resist material is used, but a positive-type resist material may also be used to form the film F2. In this case, for example, the film F2 is formed over the entire surface Wa before exposure and development, and then the peripheral exposure device U4 exposes the peripheral region of the film F2 with an exposure width corresponding to the position of the outer edge of the film F1. Then, the exposed area is removed by development, so the peripheral region of the film F2 is removed. The outer edge of the film F2 after exposure and development may be located outside the outer edge of the film F1, or inside the outer edge of the film F1, as long as it follows the shape of the outer edge of the film F1.

[0109] When a positive-type resist material is used, the result determination unit 207 generates cut information based on the determination image, showing the relationship between the circumferential position and the outer edge position of the film F2 (film F2 after the peripheral portion has been removed after development). The outer edge position of film F2 may be determined by the radial distance from the theoretical position of the outer edge of surface Wa. Since film F2 before development and exposure is exposed up to the outer edge of surface Wa, the outer edge position of film F2 after the peripheral portion has been removed represents the exposure width. Similar to when a negative-type resist material is used, the result determination unit 207 determines whether the exposure to film F2 is normal based on the result of comparing either the edge information or the exposure map with the cut information.

[0110] The image information acquisition unit 201 may acquire a peripheral image obtained by imaging the peripheral region of the surface Wa from an external device separate from the substrate processing system, instead of using the inspection device U3.

[0111] When the exposure control unit 206 changes the exposure width by driving the mask member 123 or the like according to the exposure map, it may change the exposure width while the rotation of the wafer W is stopped by the drive mechanism 112 of the rotation holding unit 110. For example, if an exposure map like the one shown in Table 1 is obtained, the exposure control unit 206 may control the peripheral exposure device U4 so that exposure is performed with an exposure width (1.1 mm) corresponding to 1° in the range of circumferential position Xθ (angle) from 1° to 2°. The exposure control unit 206 may then stop the rotation of the wafer W before exposure light is irradiated at a location where the circumferential position Xθ is 2°, and change the position of the mask member 123, etc., to match the exposure width (1.2 mm) corresponding to 2°.

[0112] The exposure map may be set as shown in Table 2 below. [Table 2]

[0113] The exposure map shown in Table 2 represents the sequential execution of processes from "Step 1" to "Step 359," with the processing time (seconds), exposure width (mm), starting angle (°), and angle range (°) set as conditions for each step. The processing time represents the execution time of that step, and the exposure width is the radial exposure range set based on edge information. The starting angle represents the circumferential position Xθ (angle) at which that step is executed, and the angle range represents the circumferential range over which that step continues. For example, in Step 1, the processing continues for 0.5 seconds with the exposure width adjusted to 1.1 mm in the circumferential position Xθ range from 0° to 1°. Below, several examples of control according to the exposure map shown in Table 2 will be explained.

[0114] (Example 1) The exposure control unit 206 may change the exposure width by driving the mask member 123, etc., while continuing to rotate the wafer W so that one step and the next step are executed in succession. If there is a change in the exposure width from the previous step, the exposure control unit 206 may start driving the mask member 123, etc., to change the exposure width when the start of the current step occurs. Driving the mask member 123, etc. means driving the mask member 123 to change the exposure width, driving the shutter 125 to change the exposure width, or driving the holder 111 to change the exposure width. The exposure control unit 206 may control the drive mechanism 112 that rotates the holder 111 so that the wafer W rotates at a constant rotational speed in all steps. In all steps, exposure light having a constant illuminance may be irradiated by the exposure unit 120 onto the exposure area on the surface Wa of the wafer W.

[0115] (Example 2) In the exposure map, the exposure width and the rotation speed of the wafer W may be set for each predetermined angle. When the exposure control unit 206 exposes the coating F2, it may change the exposure width while continuing to rotate the wafer W according to the exposure map, and irradiate the surface Wa with exposure light using the exposure unit 120. In setting the exposure map, the exposure map setting unit 203 may repeatedly evaluate the difference in exposure width between two consecutive angles, changing the angle one by one. Here, the angle from which exposure light is first irradiated of the two angles to be evaluated is called the "first angle," and the other angle that is continuous with the first angle is called the "second angle." The exposure map setting unit 203 may repeatedly calculate the difference between the exposure width at the first angle and the exposure width at the second angle that is continuous with the first angle, changing the second angle by the predetermined angle. Furthermore, the exposure map setting unit 203 may set the rotation speed in a range greater than the speed reference value if the condition that the above-mentioned difference (the difference in exposure width between the first angle and the second angle) is smaller than a predetermined level is met in a range that includes a predetermined number or more consecutive angles. The predetermined level and predetermined number are arbitrarily set in advance at the time of setting the exposure map.

[0116] In one example, the exposure map setting unit 203 creates an exposure map as shown in Table 2, and then repeatedly calculates the difference between the exposure width at the target Step (exposure width at the second angle) and the exposure width at the Step immediately preceding the target Step (exposure width at the first angle), while increasing the target Step by one. Specifically, the exposure map setting unit 203 calculates the difference between the exposure width at Step 1 and the exposure width at Step 2, and then calculates the difference between the exposure width at Step 2 and the exposure width at Step 3. Thereafter, the exposure map setting unit 203 repeats the process of calculating the difference in exposure width between two consecutive Steps in the same manner.

[0117] The exposure map setting unit 203 sets the rotation speed to a value greater than the speed reference value in the range including a predetermined number of target steps (e.g., 3 to 7) or more, if the condition that the difference in exposure width between two consecutive steps is below a predetermined level is met within that range. To explain with a specific example, assuming the predetermined number is 5, we assume that in the range of Steps 2 to 6, the difference in exposure width between the previous step and Step 6 is within a predetermined level (e.g., ±0.3 mm), and the difference in exposure width between Step 6 and Step 7 is greater than the predetermined level. In this case, the exposure map setting unit 203 sets the rotation speed to a value greater than the speed reference value (e.g., 12 rpm) in the range of Steps 2 to 6. Note that if the predetermined number is 5, and the above condition is met in 6 or more consecutive steps, the rotation speed will be set to a value greater than the speed reference value in those 6 or more steps.

[0118] The exposure map setting unit 203 may set the rotation speed to the speed reference value (or less than or equal to the speed reference value) in Steps (angles) other than the range in which the rotation speed is set to a value greater than the speed reference value. Depending on the exposure width setting in the exposure map, there may not be a predetermined number of consecutive Steps that satisfy the above conditions. In this case, the exposure map setting unit 203 may set the rotation speed to the speed reference value (or less than or equal to the speed reference value) for each of the Steps.

[0119] (Example 3) As in Example 2 above, when the rotation speed is increased in a range where the variation in exposure width is continuously small, the exposure map may further set the illuminance of the exposure light for each predetermined angle. The exposure control unit 206 may control the exposure unit 120 to irradiate the surface Wa with exposure light while adjusting the illuminance according to the exposure map when exposing the coating F2. In this case, the exposure unit 120 may be configured to adjust the illuminance of the exposure light (the dose amount in the area exposed by the exposure light). The dose amount in the area exposed by the exposure light on the surface Wa changes depending on the illuminance of the exposure light.

[0120] When setting the exposure map, the exposure map setting unit 203 may set the illuminance of the exposure light to a value greater than the illuminance reference value in the range where the rotation speed of the wafer W is set to a value greater than the speed reference value. To explain with a specific example, in the exposure map shown in Table 2, if the rotation speed is set to a value greater than the speed reference value in the range of Steps 2 to 6, the illuminance of each of Steps 2 to 6 will be set to a value greater than the illuminance reference value. If there are no predetermined number of consecutive Steps that satisfy the above condition, the exposure map setting unit 203 may set the illuminance of the exposure light to the illuminance reference value (or less than or equal to the illuminance reference value) in each of the Steps.

[0121] (Example 4) In addition to or instead of the settings in Example 2 described above, the exposure map setting unit 203 may set the rotation speed at an angle (second angle) that satisfies the condition that the difference between the exposure width at the first angle and the exposure width at the second angle continuous with the first angle is greater than a predetermined level to a value smaller than the speed reference value. In Example 4 as well, the exposure map setting unit 203 repeatedly calculates the difference between the exposure width at the first angle and the exposure width at the second angle continuous with the first angle, while changing the second angle by the predetermined angle. The predetermined level used in Example 4 may be different from the predetermined level used in Example 2, and is arbitrarily set in advance at the time of setting the exposure map.

[0122] In one example, the exposure map setting unit 203 creates an exposure map as shown in Table 2, and then calculates the difference between the exposure width at the target step (exposure width at the second angle) and the exposure width at the step immediately preceding the target step (exposure width at the first angle), repeating this process while increasing the target step by one. Then, the exposure map setting unit 203 sets the rotation speed to a value smaller than the speed reference value for the target step that satisfies the condition that the difference in exposure width between two consecutive steps is greater than a predetermined level.

[0123] To illustrate with a specific example, consider a case in Step 5 where the difference in exposure width between Step 5 and the previous Step, Step 4, is greater than a predetermined level (e.g., ±0.5 mm). In this case, the exposure map setting unit 203 sets the rotation speed to a value smaller than the speed reference value (e.g., 5 rpm) in Step 5. For Steps (angles) outside the range where the rotation speed is set to a value smaller than the speed reference value, the exposure map setting unit 203 may set the rotation speed to the speed reference value (or greater than or equal to the speed reference value). Depending on the exposure width setting in the exposure map, there may be no Step that satisfies the above conditions in Example 4. In this case, the exposure map setting unit 203 may set the rotation speed to the speed reference value (or greater than or equal to the speed reference value) in each of the Steps.

[0124] (Example 5) As in Example 4 above, when the rotation speed is reduced in areas where the exposure width fluctuates rapidly, the exposure map may further set the illuminance of the exposure light for each predetermined angle. The exposure control unit 206 may control the exposure unit 120 to irradiate the surface Wa with exposure light while adjusting the illuminance according to the exposure map when exposing the coating F2. In this case, the exposure unit 120 may be configured to allow adjustment of the illuminance of the exposure light (the dose amount in the area where the exposure light hits).

[0125] When setting the exposure map, the exposure map setting unit 203 sets the illuminance of the exposure light to a value less than the illuminance reference value at angles of 1 or more where the rotation speed of the wafer W is set to a value less than the speed reference value. To explain with a specific example, in the exposure map shown in Table 2, if the rotation speed is set to a value less than the speed reference value in Step 5, the illuminance in Step 5 is set to a value less than the illuminance reference value. If there is no Step that satisfies the above conditions in Example 4, the exposure map setting unit 203 may set the illuminance of the exposure light to the illuminance reference value (or greater than or equal to the illuminance reference value) in each of the Steps.

[0126] (Example 6) Depending on the degree of warping on the surface Wa of the wafer W, peripheral exposure of the surface Wa may be performed while adjusting the position of the mask member 123 in the direction from which the exposure light is emitted. Figure 17(a) shows a schematic diagram to explain the problems when the wafer W contains warping. In Figure 17(a), a wafer W with no warping (flat) in the exposure target area of ​​the peripheral region is shown as "W1", a wafer W with the exposure target area of ​​the peripheral region warped so that it bends upward is shown as "W2", and a wafer W with the exposure target area of ​​the peripheral region curved so that it bends downward is shown as "W3". Note that a single wafer W may have a mixture of two or more of the following characteristics: a portion without warping, a portion that bends upward, and a portion that bends downward.

[0127] In Figure 17(a), the area marked with numerous dots represents the range of light emitted from the aperture of the mask member 123. The range of light emitted from the aperture of the mask member 123 expands as the light progresses, even when the optical path is adjusted by the optical system member 122. When the position of the mask member 123 is fixed, the distance in the Z-axis direction between the mask member 123 and the exposure target area on the surface Wa (hereinafter referred to as "irradiation distance Id"; see Figure 17(b)) differs among wafers W1, W2, and W3. If the irradiation distances Id differ, the actual exposed width will change even if the exposure width setting value is the same.

[0128] As shown in Figure 7, the control device 100 may have a warpage information acquisition unit 209 as a functional block. The warpage information acquisition unit 209 acquires information indicating the state of warpage in the peripheral region of the surface Wa of the wafer W (hereinafter simply referred to as "warpage information"). For example, the warpage information acquisition unit 209 acquires an end face image taken of the end face Wb of the wafer W from the inspection device U3 and acquires warpage information from the difference with a reference wafer that does not warp. The warpage information may also be information indicating the relationship between the circumferential position Xθ around the center of the wafer W and the amount of warpage of the outer edge portion of the surface Wa of the wafer W.

[0129] The warpage information acquisition unit 209 may calculate the amount of warpage of the outer edge portion of the surface Wa at predetermined angles in the circumferential direction when generating warpage information. The warpage information acquisition unit 209 calculates the amount of warpage of the outer edge portion of the surface Wa at any angle (e.g., 1°) between 0.5° and 5°. The angle unit (e.g., 1°) used when calculating the amount of warpage of the outer edge portion of the surface Wa can also be called the resolution of the warpage information. The resolution of the warpage information may be the same as the resolution of the exposure map.

[0130] A drive mechanism 124 connected to the mask member 123 may change the position of the mask member 123 in the Z-axis direction. Alternatively, a mask member 123 having a shutter 125 may be raised and lowered by a drive mechanism connected to the mask member 123. In the exposure map, the position of the mask member 123 in the direction from which exposure light is emitted may be set at predetermined angles. The exposure control unit 206 may control the exposure unit 120 (e.g., the drive mechanism 124) to irradiate the surface Wa with exposure light while adjusting the position of the mask member 123 in the direction from which exposure light is emitted according to the exposure map. The direction from which exposure light is emitted from the opening 123a of the mask member 123 may be the Z-axis direction. That is, the opening 123a (the plane including the opening edge of the opening 123a) may be perpendicular to the Z-axis direction.

[0131] In setting the exposure map, the exposure map setting unit 203 may set the position of the mask member 123 in the direction from which exposure light is emitted at predetermined angles, based on the warp information. The exposure map setting unit 203 may set the position of the mask member 123 in the Z-axis direction so that the difference in irradiation distance Id for each angle decreases (for example, so that the irradiation distance Id becomes constant), according to the amount of warp indicated by the warp information. The position of the mask member 123 in the Z-axis direction may be specified by the difference from the reference position (i.e., the offset value).

[0132] As shown in Figure 17(b), the peripheral exposure apparatus U4 may have position sensors 132 and 134. Position sensor 132 is a sensor that acquires information indicating the position of the mask member 123 in the Z-axis direction. Position sensor 132 acquires information indicating the position of the lower surface of the mask member 123 in the Z-axis direction, for example. Position sensor 134 is a sensor that acquires information indicating the position of the peripheral portion (exposure target area) of the surface Wa of the wafer W in the Z-axis direction. The irradiation distance Id can be calculated from the position information acquired by position sensors 132 and 134. Position sensors 132 and 134 can be of any type as long as they can detect information indicating position, but for example, they are non-contact type position sensors.

[0133] The control device 100 may acquire information from position sensors 132 and 134 while controlling the peripheral exposure device U4 to expose the coating F2 in the peripheral region of the surface Wa according to the exposure map. Based on the information from position sensors 132 and 134, the control device 100 may evaluate whether the irradiation distance Id during exposure of the coating F2 in the peripheral region is within an appropriate range. If the control device 100 evaluates that the irradiation distance Id during exposure is not within an appropriate range, it may issue an alarm.

[0134] When comparing the relative magnitudes of two numbers within a computer, either the criteria "greater than or equal to" or "greater than" may be used, as may either the criteria "less than or equal to" or "less than." The choice of such criteria does not change the technical significance of the process of comparing the relative magnitudes of two numbers. In one of the various examples described above, at least some of the matters described in the other examples may be combined.

[0135] <Modified example of a peripheral exposure device> Next, a modified example of the peripheral exposure apparatus U4 will be described. As shown in Figure 18, the peripheral exposure apparatus U4 may be located inside the housing of the inspection apparatus U3. When the configuration of the exposure unit 120 is arranged in the area of ​​the dashed line in Figure 18, the configurations shown in Figure 6 that have the same function as those shown in Figures 4 and 5 can be combined with the configurations in Figures 4 and 5. For example, the rotating holding unit 110, holding base 111 (holding part), drive mechanisms 112, 113, and guide rail 114 in Figure 6 correspond to the rotating holding unit 60, holding base 61, drive mechanisms 62, 63, and guide rail 64 in Figures 4 and 5 (Figure 18). When operating as the peripheral exposure apparatus U4, the drive mechanism 63 moves the holding base 61 (holding part) to a second position closer to the exposure unit 120. After the move, it becomes possible to expose the wafer W held on the holding base 61.

[0136] As shown in Figure 18, the inspection apparatus U3, including the peripheral exposure apparatus U4, may also include a state detection unit 86 for detecting the state of the wafer W before peripheral exposure, which is held on the holding table 61. The state detection unit 86 includes a peripheral edge measuring sensor 87 for measuring the position of the peripheral edge of the wafer W held on the holding table 61, and a distance sensor 88 for measuring the distance of the outer edge of the wafer W in the Z-axis direction (perpendicular to the surface Wa of the wafer W). The peripheral edge measuring sensor 87 is a sensor that measures the horizontal position of the peripheral edge of the wafer W, and may have, for example, a CCD camera, and is used to calculate the eccentricity from the center position of the wafer W and to detect the position of the notch of the wafer W. The distance sensor 88 measures the distance of the outer edge of the wafer W in the Z-axis direction. The distance sensor 88 may be, for example, a photoelectric sensor or an ultrasonic sensor. The peripheral edge measuring sensor 87 and the distance sensor 88 may be configured to measure the position and distance of the wafer W from the back surface of the wafer W so as not to affect the film on the surface of the wafer W.

[0137] As shown in Figure 7, the warpage information acquisition unit 209 of the control device 100 may acquire information indicating the state of warpage in the peripheral region of the surface Wa of the wafer W based on the measurement results of the peripheral edge measuring sensor 87 and the distance sensor 88. The warpage information acquisition unit 209 may also acquire information indicating the state of warpage based on the values ​​of the peripheral edge measuring sensor 87 and the distance sensor 88 for each predetermined angle (for example, any angle between 0.5° and 5°) of the outer edge of the wafer W.

[0138] Figure 19 shows an example of an alternative structure of the rotation holding unit 60 of the peripheral exposure apparatus U4 described in Figure 18. In Figure 19, a Y-axis direction adjustment unit 115 (radial direction adjustment unit) and a Z-axis direction adjustment unit 116 (vertical direction adjustment unit) are provided on the upper part of the drive mechanism 63. The drive mechanism 62 is connected to the upper part of the Y-axis direction adjustment unit 115, and the Z-axis direction adjustment unit 116 is connected to its side. The Y-axis direction adjustment unit 115 has a drive unit (not shown) and adjusts the position of the holding base 61 and the drive mechanism 62 in the Y-axis direction (radial direction of the wafer W) by operating the drive unit in response to an operation signal from the control device 100. The Z-axis direction adjustment unit 116 has a drive unit (not shown) and adjusts the position of the holding base 61 and the drive mechanism 62 in the Z-axis direction (perpendicular to the surface of the wafer W) by operating the drive unit in response to an operation signal from the control device 100.

[0139] Although not shown in Figure 19, the mask member 123 may be equipped with a drive unit for adjusting its position in the Z-axis direction. The mask member 123 may change its position in the Z-axis direction by operating the drive unit in response to an operation signal from the control device 100.

[0140] An example of a wafer W processing method performed in the wafer processing system 1 will be described with reference to Figures 20 and 21. The processing from steps S11 to S15 is the same as the processing from steps S01 to S05 in Figure 9 described above, so the explanation will be omitted. After step S15, the control device 100 executes step S16. For example, in step S16, the control device 100 controls the drive mechanism 63 to move the holder 61 on which the wafer W is held to a second position closer to the exposure unit 120. After the move, the control device 100 rotates the holder 61 and causes the state detection unit 86 to detect the state of the wafer W held on the holder 61. The peripheral edge measuring sensor 87 of the state detection unit 86 measures the position of the peripheral edge of the wafer W at predetermined angles (for example, every 1°). The distance sensor 88 measures the distance in the Z-axis direction at predetermined angles (for example, every 1°) of the outer edge of the wafer W. The angle is specified as, for example, 1°, but it may be greater than or equal to 1°, or less than or equal to 1° (for example, 0.5°). The warp information acquisition unit 209 acquires information for each measured angle.

[0141] Next, the control device 100 executes step S17. Step S17 involves, for example, setting the exposure map in the exposure map setting unit 203 based on the measurements obtained in step S16. The exposure map setting unit 203 sets the exposure map from the distance in the Z-axis direction at predetermined angles of the outer edge of the wafer W and the position at predetermined angles of the peripheral edge of the wafer W. The exposure map may adjust the position information of the wafer W at peripheral exposure, i.e., the radial position of the wafer W and the Z-axis position of the mask, for each angle in the circumferential direction of the wafer W (for example, every 1°).

[0142] The exposure map may be set as shown in Table 3 below. [Table 3]

[0143] The exposure map shown in Table 3 represents the sequential execution of processes from "Step 1" to "Step 359". For each step, four values ​​are set as conditions: exposure width (mm), start angle (°), wafer adjustment position (mm), and mask height adjustment value (mm) (Step S14). The processing time represents the execution time of that step, and the exposure width is the radial exposure range set based on edge information. The start angle represents the circumferential position Xθ (angle) at which the step is executed. For example, in Step 1, the process continues for 0.5 seconds with the exposure width adjusted to 1.1 mm when the circumferential position Xθ is in the range of 0° to 1°.

[0144] Using the three settings shown in Table 3, the exposure control unit 206 will, for example, control the exposure width to 1.1 mm at locations where the circumferential position Xθ is 0°. This part is the same process as the control shown in Table 2 above (Examples 1 to 6).

[0145] The following describes the exposure map, which adds exposure position information, specifically the wafer adjustment position and mask height adjustment value, to these three settings. In Table 3, the wafer adjustment position is a setting that moves the radial position (Y-axis position) of the wafer W by +0.01 mm from the reference position when the circumferential position Xθ is 0°. When the circumferential position Xθ is 1°, it is a setting that moves the wafer W to +0.02 mm from the reference position.

[0146] In Table 3, the mask height adjustment value is the setting that moves the mask height (position in the Z-axis direction) by +0.5 mm from the reference position when the circumferential position Xθ is 1°. When the circumferential position Xθ is 2°, the setting is to move it by +0.4 mm from the reference position.

[0147] Next, the control device 100 executes step S18. In step S18, for example, the exposure control unit 206 controls the peripheral exposure device U4 to expose the coating F2 in the peripheral region of the surface Wa according to the exposure map which includes the exposure position information set in step S17. The differences in this step from what was explained in step S06 in Figure 9 will be explained. As shown in Figure 19, the exposure control unit 206 rotates the wafer W held on the holder 61 and irradiates the outer peripheral region of the surface Wa with exposure light using the exposure unit 120 (not shown). During this exposure irradiation, the exposure control unit 206 drives the Y-axis adjustment unit 115 to adjust the Y-axis position and drives the Z-axis adjustment unit 116 to adjust the Z-axis position of the mask member 123 based on the exposure position information, and controls the positions of the holder 61 and the drive mechanism 62 so that they match the adjustment values ​​set in Table 3. In other words, the exposure control unit 206 controls the exposure width, the adjustment position of the wafer W, and the mask height so that the coating F is exposed with the set exposure width at each angle for which the exposure width is set in the exposure map.

[0148] Regarding the adjustment of the Z-axis of the mask member 123, it has been shown that the Z-axis adjustment unit 116 is driven, but the drive mechanism 124 connected to the mask member 123 may change the position of the mask member 123 in the Z-axis direction.

[0149] Using the example shown in Table 3, the exposure control unit 206 may, for example, control the exposure width to be 1.1 mm at locations where the circumferential position Xθ is 0°, while simultaneously moving the radial position of the wafer W (position in the Y-axis direction) by +0.01 and moving the height of the mask by +0.5 mm. In this case, the exposure control unit may calculate a correction value based on the height of the mask and the radial position of the mask due to the movement of the radial position of the wafer W, and control the exposure width to be 1.1 mm.

[0150] In this way, the control device 100 causes the wafer W held on the holding base 61 to be detected by the peripheral edge measuring sensor 87 and the distance sensor 88 in the state detection unit 86 (step S16). Then, based on the detected information, the control device 100 additionally sets exposure position information in the exposure map and uses the set information to control the movement of the Y-axis position of the rotation holding unit 60 for each circumferential position Xθ and the movement of the Z-axis position of the mask member 123. This makes it possible to expose the wafer W with an appropriate exposure width without being affected by the state of the wafer W, such as warping. By detecting the state of the wafer W (step S16) after resist coating and heat treatment (step S15) and resetting the exposure map (step S17), it is possible to set the exposure map according to the state of the wafer W that has been deformed due to the resist coating process and heat treatment.

[0151] Next, the control device 100 executes step S19, and then step S20. Steps S19 and S20 are identical to steps S07 and S08 in Figure 9 described above, so their explanation is omitted.

[0152] (Example 7) An example of calculating the wafer adjustment position and mask height adjustment value in Table 3 by measuring them with the state detection unit 86 will be explained using Figure 21. In Figure 21(a), the X-axis (Wafer Position) represents the position of the wafer W in the circumferential direction (θ-axis), and the Y-axis (Edge Position) represents the position from the center of the wafer W to the edge of the wafer W. "E10" represents the position of the edge when the wafer W is not warped. The position of the edge of the wafer W may be a value measured in advance on a reference wafer that is not warped, or it may be a theoretical value set in advance from the radial size of the wafer. "E11" indicates the position of the wafer edge acquired by the warp information acquisition unit based on the measurement value of the circumferential edge measurement sensor 87 in the state detection unit 86. The edge position in E11 is acquired for each position in the circumferential direction (θ-axis).

[0153] The wafer adjustment positions in Table 3 may be calculated by determining the difference between the positions of E10 and E11 for each circumferential position, and then calculating the amount of movement from the reference position based on the determined circumferential (θ-axis) position. This calculation may also be performed by the exposure map setting unit 203 of the control device 100.

[0154] Next, we will explain using Figure 21(b). In Figure 21(b), the X-axis (Wafer Position) represents the position of the wafer W in the circumferential direction (θ-axis), and the Y-axis (Wafer Height) represents the position of the wafer W surface Wa along the Z-axis. "E12" represents the reference value when the wafer is not warped (0 mm). "E13" represents the position of the wafer W in the circumferential direction (θ-axis) when the distance sensor 88 in the state detection unit 86 measures the distance to the outer edge of the wafer W.

[0155] The mask height adjustment values ​​in Table 3 may be calculated by determining the difference between the reference position E12 and E13 for each circumferential position, and then calculating the amount of movement from the reference position based on the determined circumferential (θ-axis) position. This calculation may also be performed by the exposure map setting unit 203 of the control device 100.

[0156] Next, we will explain another example of the calculation method using Table 3. Figure 21(c) is a correlation graph used to calculate the wafer adjustment position in Table 3 from the Z-axis position of the outer edge obtained by measurement with the distance sensor 88. In Figure 21(c), the horizontal axis (Wafer Height) represents the difference in the Z-axis direction of the peripheral edge E13 from the reference position E12, and the vertical axis (Width Offset) represents the adjustment position of the wafer W in the radial direction (Y-axis direction).

[0157] Alternatively, the difference between E13 and E12 (E13-E12) in Figure 21(b) can be calculated for each X-axis (θ-axis), and the calculated difference can be applied to the correlation graph in Figure 21(c) to calculate the wafer adjustment position in Table 3. This calculation may also be performed in the exposure map setting unit 203 of the control device 100. By performing the calculation using Figure 21(c), it becomes unnecessary to calculate the wafer adjustment position using the peripheral edge measurement sensor 87. In other words, the state of the wafer W can be determined with a reduced number of sensors.

[0158] (Example 8) Next, another control example using the peripheral exposure apparatus U4 shown in Figure 19 will be described. As shown in Figure 19, the position of the holder 61 in the Z-axis direction can be set to a reference holding position A and a reference holding position B which is different from reference holding position A. By adjusting the Z-axis direction adjustment unit 116 under the control of the control device 100, the reference holding position A and the reference holding position B can be changed. In Figure 19, an example is shown where the reference holding position A is higher in the Z-axis direction than the reference holding position B, but the example is not limited to this, and it may be possible to set to multiple mounting positions, including an example where the reference holding position B is higher than the reference holding position A.

[0159] If the wafer W held by the holder 61 at the reference holding position A is bent upward, the peripheral edge of the wafer W may come into contact with the mask member 123. The exposure map setting unit 203 of the control device 100 measures the position of the peripheral edge of the wafer W from the value of the distance sensor 88, and if the measured position is above a preset threshold, it may determine that the wafer W is coming into contact with the mask member 123. If it is determined that the wafer W is coming into contact with the mask member 123, the control device 100 may adjust the Z-axis direction adjustment unit 116 during exposure to move the holding position of the holder 61 from the mounting position A to the mounting position B. When moved to the mounting position B, the distance from the irradiation unit (light source 121 and optical system member 122) to the wafer W increases, but to compensate for this, the control device 100 may set the illuminance of the light source 121 to increase.

[0160] (Example 9) Using Figure 22, another setting method for the exposure map setting unit 203 of the control device 100 will be explained. Figure 22 is a magnified view of the exposure map (exposure width Ees) shown in Figure 13 in the Xθ axis direction. Exposure widths Ees0 to 4 represent exposure widths set at predetermined angles (for example, every 1°) from the exposure width Ees. Reference positions Ees1L to 3L (left end) and reference positions Ees1R to 3R (right end) are reference positions when changing the exposure width while continuously rotating the wafer W.

[0161] Check the difference in exposure width at predetermined angles from the exposure width Ees in the exposure map (exposure width Ees). For example, if the exposure width is wide, such as between exposure width Ees1 and Ees2, set the reference position to reference position Ees1L (left end) and set the exposure width to match the exposure map (exposure width Ees). If it is narrow, such as between Ees2 and Ees3, set the reference position to reference position Ees2R and set the exposure width to match the exposure map (exposure width Ees). Although not shown in the diagram, if there is no difference in exposure width, the reference position can be set to either the left end or the right end. By setting the reference position in this way after setting the exposure width and changing the reference position when exposing while rotating the wafer W, it is possible to set the exposure to be close to the exposure map (exposure width Ees).

[0162] Next, let's explain the exposure process. Exposure width Ees1 is changed based on the reference position Ees1L, and exposure proceeds in the order of exposure width Ees1, then exposure width Ees1', and finally exposure width Ees2. From exposure width Ees2 to Ees3, exposure proceeds in the order of exposure width Ees2, then exposure width Ees2', and finally exposure width Ees3, based on the reference position Ees2R.

[0163] In the example above, the difference in exposure width was used for the determination, but it may also be determined from the inclination of the exposure map (exposure width Ees), etc. The direction of the reference position may be changed as appropriate depending on the rotation direction of the wafer W, etc.

[0164] [Summary of this disclosure] [1] A substrate processing method comprising: generating edge information showing the relationship between the circumferential position Xθ around the center of the wafer W and the outer edge position of the coating F1 in the radial direction of the wafer W, based on a peripheral imaging image obtained by imaging the peripheral region of the surface Wa of a wafer W on which a coating F1 has been formed; setting an exposure map showing the relationship between the circumferential position Xθ and a set value of the exposure width in the radial direction based on the edge information; forming a coating F2 on at least the peripheral region of the surface Wa after the peripheral imaging image has been obtained; obtaining warpage information of the wafer W after the coating F2 has been formed; setting an exposure map showing the relationship between the circumferential position of the wafer W and the exposure position information of the substrate based on the warpage information of the wafer W; and exposing the coating F2 in the peripheral region according to the exposure map.

[0165] Using the example shown in Figure 12(b), we consider the case where a negative-type resist material is used and the exposure width is set to a constant value. For example, if the position of "Er1" shown in Figure 12(b) is set to the point closest to the center of the exposure area, in a certain circumferential area, the outer edge of film F1 may not be covered by film F2, and film F0, which is further beneath film F1, may be exposed. In this case, a portion of the exposed film F0 may affect the part of film F1 that is not covered by film F2 and where an uneven pattern is formed. Therefore, for example, the position of "Er2" shown in Figure 12(b) is set to the point closest to the center of the exposure area when the exposure width is set to a constant value. Note that, normally, the position of the outer edge of film F1 is not detected for each individual wafer W, and a constant exposure width is set. In this case, assuming the worst-case scenario, the exposure width is set further inward from the outer edge of film F1. As described above, when the exposure width is set at the position "Er2", the area between the outer edge of film F1 and the inner edge of film F2 after exposure and development becomes larger. As a result, the area on film F1 in which an exposed uneven pattern is formed becomes smaller due to the annular film F2 formed in the peripheral region. In the above substrate processing method, the exposure width can be set along the shape of the outer edge of film F1, so it is possible to avoid a reduction in the area on film F1 in which an uneven pattern can be formed due to film F2 without exposing film F0. Similarly, even when a positive-type resist material is used, it is not necessary to remove the peripheral portion of the resist film (film F2) formed using that resist material more than necessary. Therefore, it is possible to avoid a reduction in the area on film F2 in which an uneven pattern can be formed due to the removal of the peripheral portion. Furthermore, an example after the formation of the coating F2 will be explained using the example shown in Figure 18. The state detection unit 86 has a peripheral edge measuring sensor 87 that measures the peripheral edge of the wafer W held on the holding stand 61 and a distance sensor 88 that measures the distance of the outer edge of the wafer W in the Z-axis direction (perpendicular to the surface Wa of the wafer W), and detects the warping state of the wafer W. Based on this warping state, by setting according to the warping of the wafer W, it becomes possible to expose the wafer W without exposure position shift due to warping.

[0166] [2] The substrate processing method according to [1] above, further comprising imaging the peripheral region of the surface Wa of the wafer W to obtain a peripheral imaging image. Even in this case, it is possible to perform exposure that matches the state of the outer edge of the underlying film.

[0167] [3] The substrate processing method according to [1] or [2] above, wherein the exposure map is set such that, at predetermined angles, the exposure width is shifted by a certain amount from the outer edge position (outer edge position of the coating F1) indicated by the edge information to the position of one end of the exposure range closest to the center of the wafer W. In this case, the exposure width can be set to a shape that is closer to the shape of the outer edge of the film F1, and a constant value can be added or subtracted from the outer edge position of the film F1, thereby reducing the computational load when setting the exposure map.

[0168] [4] The substrate processing method according to any one of [1] to [3] above, wherein the exposure map has an exposure width set for each predetermined angle, and the edge information has the outer edge position obtained for each predetermined angle. In this case, the outer edge position of the coating F1 is calculated using the minimum angular units required for setting the exposure map, thus reducing the computational load when calculating the outer edge position of the coating F1 from the peripheral image.

[0169] [5] A substrate processing method according to any one of [1] to [4] above, further comprising: performing exposure according to an exposure map, developing the wafer so that a coating F2 remains in the peripheral region; imaging the peripheral region of the wafer surface Wa after development of the coating F2 to obtain a determination image; generating cut information showing the relationship between the circumferential position Xθ and the inner edge position of the coating F2 in the radial direction based on the determination image; and determining whether the exposure to the coating F2 is normal based on the result of comparing the edge information and the exposure map with the cut information. In this case, the actual results after exposure are inspected, which improves the reliability of the wafer W that has undergone peripheral exposure.

[0170] [6] A substrate processing method according to any one of [1] to [4] above, further comprising: performing exposure according to an exposure map, then developing the film F2 such that the portion located in the peripheral region of the film F2 is removed; imaging the peripheral region of the surface Wa of the wafer W after development of the film F2 to obtain a determination image; generating cut information showing the relationship between the circumferential position Xθ and the outer edge position of the film F2 in the radial direction based on the determination image; and determining whether the exposure to the film F2 is normal based on the result of comparing the edge information and the exposure map with the cut information. In this case, the actual results after exposure are inspected, which improves the reliability of the wafer W that has undergone peripheral exposure.

[0171] [7] The substrate processing method according to any one of [1] to [6] above, wherein exposure to the coating F2 includes irradiating the surface Wa with exposure light through a mask member 123 provided with an opening 123a, and moving the mask member 123 radially to change the exposure width according to an exposure map. In this case, since the components and optical system for irradiating light for exposure do not need to be driven or adjusted according to the circumferential position during exposure, the exposure width can be easily changed.

[0172] [8] The substrate processing method according to any one of [1] to [7] above, wherein exposure to the coating F2 includes irradiating the surface Wa with exposure light through a mask member 123 provided with an aperture 123a and a shutter 125 that can adjust the opening of the aperture 123a, and adjusting the opening of the shutter to change the exposure width according to an exposure map. In this case, since the components and optical system for irradiating light for exposure do not need to be driven or adjusted according to the circumferential position during exposure, the exposure width can be easily changed.

[0173] [9] The substrate processing method according to any one of [1] to [7] above, wherein exposure to the coating F2 includes irradiating the surface Wa of the wafer W held on the holding stand 111 with exposure light from an irradiation unit (light source 121 and optical system member 122) capable of irradiating exposure light, and moving the holding stand 111 to change the exposure width according to an exposure map. In this case, since the components and optical system for irradiating light for exposure do not need to be driven or adjusted according to the circumferential position during exposure, the exposure width can be easily changed.

[0174]

[10] The substrate processing method according to any one of [1] to [9] above, wherein the exposure map has an exposure width and a rotation speed of the wafer W set for each predetermined angle, exposure to the film F2 includes changing the exposure width while continuing to rotate the wafer W according to the exposure map and irradiating the surface Wa with exposure light, and setting the exposure map includes calculating the difference between the exposure width at a first angle and the exposure width at a second angle that is continuous with the first angle, while changing the second angle by the predetermined angle, and setting the rotation speed in that range to a value greater than the speed reference value when the condition that the above difference is smaller than a predetermined level is met in a range that includes a predetermined number or more consecutive angles. One approach is to perform peripheral exposure while continuously rotating the wafer W and changing the exposure width according to the circumferential position Xb (angle). In such peripheral exposure, if the degree of change in exposure width is continuously small, it is easy to make the device or component for changing the exposure width follow the change in the set value of the exposure width, even if the rotation speed of the wafer W increases. In the above method, when a predetermined number of consecutive conditions are met where the difference between consecutive angles is smaller than a predetermined level, the rotation speed is set to a value greater than the reference value within that range. This makes it possible to shorten the processing time when performing peripheral exposure while changing the exposure width. Therefore, it is useful for achieving both exposure that matches the state of the outer edge of the underlying film and maintaining throughput.

[0175]

[11] The substrate processing method according to

[10] , wherein the exposure map further sets the illuminance of the light for exposure at predetermined angles, and exposure to the film F2 includes irradiating the surface Wa with light for exposure while adjusting the illuminance according to the exposure map, and setting the exposure map further includes setting the illuminance of the light for exposure to a value greater than the illuminance reference value in the range in which the rotation speed is set to a value greater than the speed reference value. In this case, the difference in exposure amount (e.g., dose) due to exposure light can be reduced between the range where the rotation speed is faster than other ranges and those other ranges. Therefore, even when increasing the rotation speed to shorten the processing time, it is possible to achieve uniformity of the exposure state within the surface Wa of a single wafer W.

[0176]

[12] In the exposure map, the exposure width and the rotation speed of the wafer W are set for each predetermined angle, and exposure to the film F2 includes changing the exposure width while continuing to rotate the wafer W according to the exposure map and irradiating the surface Wa with exposure light, and setting the exposure map includes calculating the difference between the exposure width at a first angle and the exposure width at a second angle that is continuous with the first angle, repeating this while changing the second angle by the predetermined angle, and setting the rotation speed at angles that satisfy the condition that the above difference is greater than a predetermined level to a value greater than the speed reference value, as described in any one of [1] to

[11] above. It is conceivable to perform peripheral exposure while continuously rotating the wafer W and changing the exposure width according to the circumferential position Xb (angle). In such peripheral exposure, if the degree of change in exposure width is large, it becomes difficult to make the device or component for changing the exposure width follow the change in the set value of the exposure width. In the above method, at angles where the change in exposure width is large, the rotation speed is set to a value smaller than the speed reference value. Even if there are areas where the degree of change in exposure width is large, it is easy to make the device or component for changing the exposure width follow the change in exposure width. Therefore, the device or component can be simplified.

[0177]

[13] The substrate processing method according to

[12] , wherein the exposure map further sets the illuminance of the light for exposure for each predetermined angle, exposure to the film F2 includes irradiating the surface Wa with light for exposure while adjusting the illuminance according to the exposure map, and setting the exposure map includes setting the illuminance of the light for exposure at angles where the rotation speed is set to a value smaller than the speed reference value to a value smaller than the illuminance reference value. In this case, the difference in exposure amount (e.g., dose) due to exposure light can be reduced between the angle (range) where the rotation speed is slower than in other ranges and those other ranges. Therefore, the exposure state can be made more uniform within the surface Wa of a single wafer W.

[0178]

[14] The substrate processing method according to any one of [1] to

[14] above, wherein exposure to the coating F2 includes irradiating the surface Wa with exposure light through a mask member 123 having an opening, the exposure map sets the exposure width and the position of the mask member 123 in the direction from which the exposure light is emitted for each predetermined angle, exposure to the coating F2 further includes adjusting the position of the mask member 123 in the direction from which the exposure light is emitted according to the exposure map, and setting the exposure map includes setting the position of the mask member 123 in the direction from which the exposure light is emitted for each predetermined angle based on warpage information indicating the state of warpage in the peripheral region of the surface Wa. If there are warped areas in the peripheral region of the wafer W, even if the exposure width setting is the same, differences may occur in the area actually irradiated with exposure light. In the above method, the position of the mask member 123 also changes based on the warping information, so even if there are warped areas in the peripheral region of the wafer W, differences in the area actually irradiated with exposure light due to warping can be suppressed. Therefore, exposure can be performed with greater accuracy, matching the state of the outer edge of the underlying film.

[0179]

[15] A substrate processing apparatus (wafer processing system 1) comprising: a film forming unit (film processing apparatus U1 and heat processing apparatus U2) for forming a film on the surface Wa of a wafer W; a peripheral exposure apparatus U4 for exposing the peripheral region of the surface Wa; an image information acquisition unit 201 for acquiring a peripheral image obtained by imaging the peripheral region of the surface Wa of a wafer W in a state in which a film F1 has been formed on the surface Wa; an edge information generation unit 202 for generating edge information showing the relationship between the circumferential position Xθ around the center of the wafer W and the outer edge position of the film F1 in the radial direction of the wafer W based on the peripheral image; an exposure map setting unit 203 for setting an exposure map showing the relationship between the circumferential position Xθ and a set value of the exposure width in the radial direction based on the edge information; a film forming control unit 205 for controlling the film forming unit to form a film F2 on at least the peripheral region of the surface Wa after the peripheral image has been obtained; and an exposure control unit 206 for controlling the peripheral exposure apparatus U4 to expose the film F2 in the peripheral region according to the exposure map. This substrate processing apparatus makes it possible to perform exposure in accordance with the state of the outer edge of the underlying film, similar to the substrate processing method described in [1] above.

[0180] <Note> [Note 1] Edge information is generated based on an image obtained by imaging the peripheral region of the surface (Wa) of a substrate on which a first coating (F1) is formed, showing the relationship between the circumferential position (Xθ) around the center of the substrate (W) and the outer edge position of the first coating (F1) in the radial direction of the substrate (W). Based on the edge information described above, an exposure map is set that shows the relationship between the circumferential position (Xθ) and the set value of the exposure width in the radial direction. After obtaining the above image, a second coating is formed on at least the peripheral region of the surface (Wa), After the second coating (F2) is formed, information on the warpage of the substrate (W) is obtained, Based on the above warpage information, the relationship between the circumferential position (Xθ) and the exposure position information of the substrate (W) is set in the above exposure map, A substrate processing method comprising exposing the second film (F2) in the peripheral region according to the exposure map described above.

[0181] [Note 2] The substrate processing method described in Note 1, wherein in the exposure map, the exposure width is set such that the position of one end of the exposure area that is closer to the center of the substrate (W) is shifted by a certain amount from the outer edge position indicated by the edge information.

[0182] [Note 3] In the above exposure map, the above exposure width is set for each predetermined angle. The substrate processing method according to Appendix 1 or 2, wherein the edge information described above provides the outer edge position for each predetermined angle.

[0183] [Note 4] After exposure according to the above exposure map, development is performed so that a second film (F2) remains in the peripheral region. The peripheral region on the surface (Wa) of the substrate (W) after development of the second coating (F2) is imaged to obtain a second image, Based on the second image captured above, cut information is generated that shows the relationship between the circumferential position (Xθ) and the inner edge position of the second coating (F2) in the radial direction. The substrate processing method according to Appendix 1 or 2, further comprising determining whether or not the exposure to the second coating (F2) is normal based on the result of comparing either the edge information or the exposure map with the cut information.

[0184] [Note 5] After exposure according to the above exposure map, development is performed so that the portion of the second film (F2) located in the peripheral region is removed. The peripheral region on the surface (Wa) of the substrate (W) after development of the second coating (F2) is imaged to obtain a second image, Based on the second image captured above, cut information is generated that shows the relationship between the circumferential position (Xθ) and the outer edge position of the second coating (F2) in the radial direction. The substrate processing method according to Appendix 1 or 2, further comprising determining whether or not the exposure to the second coating (F2) is normal based on the result of comparing either the edge information or the exposure map with the cut information.

[0185] [Note 6] Exposure to the second coating (F2) is performed as follows: The surface (Wa) is irradiated with exposure light through a mask member (123) provided with an opening, A substrate processing method according to Appendix 1 or 2, comprising moving the mask member (123) in the radial direction to change the exposure width according to the exposure map described above.

[0186] [Note 7] Exposure to the second coating (F2) is performed as follows: Light for exposure is irradiated onto the surface (Wa) through a mask member (123) provided with an opening and a shutter that can adjust the opening degree of the opening, A substrate processing method according to Appendix 1 or 2, comprising adjusting the opening degree of the shutter (125) so as to change the exposure width according to the exposure map described above.

[0187] [Note 8] Exposure to the second coating (F2) is performed as follows: The exposure light is irradiated from an irradiation unit capable of emitting exposure light onto the surface (Wa) of the substrate (W) held in the holding unit, A substrate processing method according to Appendix 1 or 2, comprising moving the holding portion to change the exposure width according to the exposure map described above.

[0188] [Note 9] Obtaining the above warping information is possible. Obtain the position of the peripheral edge of the substrate (W), Obtain the distance perpendicular to the surface (Wa) of the outer edge of the substrate (W), The substrate processing method according to Appendix 1 or 2, comprising the steps of obtaining the position of the peripheral edge and the vertical distance from the back side of the substrate (W).

[0189] [Note 10] The substrate adjustment position is calculated from the difference between the position of the peripheral edge and a pre-set reference position and set as the exposure position information in the exposure map. Adjusting the position of the holding part that holds the substrate (W) based on the substrate (W) adjustment position, The substrate processing method described in Appendix 9, including the method described in Appendix 9.

[0190] [Note 11] Exposure to the second coating (F2) is The process involves irradiating the surface (Wa) with exposure light through a mask member provided with an opening, The mask height adjustment value, which is calculated from the difference between the vertical distance from the surface (Wa) of the substrate (W) at the outer edge and a pre-set reference position, is set in the exposure map as exposure position information. The substrate processing method described in Appendix 9, which includes adjusting the position of the mask member (123) based on the above mask height adjustment value.

[0191] [Note 12] The substrate adjustment position, which is the exposure position information derived from the correlation formula between the vertical distance from the surface (Wa) of the outer edge of the substrate (W) and a preset reference position, and the position adjustment value used to adjust the radial position of the substrate (W), is set in the exposure map. A substrate processing method according to Appendix 11, comprising adjusting the position of a holding part that holds the substrate (W) based on the substrate (W) adjustment position.

[0192] [Note 13] Exposure to the second coating (F2) is The process involves irradiating the surface (Wa) with exposure light through a mask member provided with an opening, The system determines contact with the mask member (123) based on information acquired by the distance sensor, The substrate processing method according to Appendix 9, which includes changing the vertical position of the holding portion that holds the substrate (W) to a second position lower than the first position if contact is determined to have occurred.

[0193] [Note 14] In the above exposure map, the above exposure width is set for each predetermined angle. The reference position for setting the exposure width is determined from the difference in exposure width for each predetermined angle as described above. Set the exposure width according to the above reference position, and The substrate processing method described in Appendix 2, including the method described in Appendix 2.

[0194] [Note 15] A coating forming unit that forms a coating on the surface (Wa) of the substrate, A holding part that holds the substrate (W), A peripheral exposure unit (U4) that exposes the peripheral region of the surface (Wa) of the substrate (W) held in the holding unit, An image information acquisition unit (201) acquires an image obtained by imaging the peripheral region on the surface (Wa) of a substrate (W) in which a first coating (F1) is formed on the surface (Wa), Based on the above captured image, an edge information generation unit (202) generates edge information showing the relationship between the circumferential position around the center of the substrate (W) and the outer edge position of the first coating (F1) in the radial direction of the substrate (W). After the above image is obtained, a film formation control unit (205) controls the film formation unit to form a second film (F2) on at least the peripheral region of the surface (Wa), After film formation control, a state detection unit (86) acquires warpage information of the substrate (W), Based on the above edge information and warpage information, an exposure map setting unit (203) sets an exposure map that shows the relationship between the circumferential position (Xθ), the set value of the exposure width in the radial direction, and the exposure position information of the substrate (W). A substrate processing apparatus (1) comprising a peripheral exposure unit (U4) and an exposure control unit (206) that controls the holding unit to expose the second coating (F2) in the peripheral region according to the exposure map described above.

[0195] [Note 16] The state detection unit (86) is A peripheral edge measuring sensor (87) for measuring the position of the peripheral edge of the substrate (W), The system includes at least one distance sensor (88) that measures the distance perpendicular to the outer edge of the substrate (W) from the surface (Wa) of the substrate (W), The substrate processing apparatus (1) described in Appendix 15 is provided with the peripheral edge measuring sensor (87) and the distance sensor (88) positioned opposite each other on the back surface of the substrate (W).

[0196] [Note 17] The above holding part includes a radial adjustment part (115) for adjusting the radial position of the substrate (W), The exposure map setting unit (203) sets the substrate adjustment position as exposure position information based on the difference between a preset reference position and the measurement value of the peripheral edge measuring sensor (87) at predetermined angles. The exposure control unit (206) adjusts the radial adjustment unit (115) at predetermined angle intervals according to the substrate adjustment position, as described in Appendix 16 of the substrate processing apparatus (1).

[0197] [Note 18] The peripheral exposure area (U4) includes a mask member (123) that adjusts the range of light exposed to the surface (Wa) of the substrate (W), The mask member (123) is equipped with a drive unit that adjusts its position vertically from the surface (Wa) of the substrate (W), The above exposure map sets the mask height adjustment value as exposure position information based on the difference between a preset reference position and the measurement value of the distance sensor (88) at predetermined angles. The exposure control unit (206) operates the drive unit at predetermined angles of the substrate (W) based on the mask height adjustment value, as described in Appendix 16, for the substrate processing apparatus (1).

[0198] [Note 19] The above holding part includes a vertical adjustment part (116) that adjusts the position vertically from the surface (Wa) of the substrate (W), The peripheral exposure area (U4) includes a mask member (123) that adjusts the range of light exposed to the surface (Wa) of the substrate (W). The exposure control unit (206) is, The presence or absence of contact with the mask member (123) is determined from the information acquired by the distance sensor (88). If contact is detected, the vertical adjustment unit (116) is adjusted to adjust the position of the holding unit to a second position lower than the first position, as described in Appendix 16 of the substrate processing apparatus (1).

[0199] [Note 20] The above holding portion includes a radial adjustment portion (115) for adjusting the radial position of the substrate (W), The exposure map setting unit (203) is, Based on the correlation formula between the vertical distance from the surface (Wa) of the outer edge of the substrate (W) measured by the distance sensor (88), the difference between that distance and a preset reference position, and the position adjustment value used to adjust the radial position of the substrate (W), the substrate adjustment position, which serves as the exposure position information, is set at predetermined angle intervals. A substrate processing apparatus (1) as described in Appendix 16, which adjusts the position of the radial adjustment part at predetermined angle intervals based on the substrate adjustment position described above. [Explanation of Symbols]

[0200] 1...Wafer processing system, W...Wafer, Wa...Surface, U1...Film processing device, U2...Heat processing device, U3...Inspection device, U4...Peripheral exposure device, 110...Rotating holding unit, 111...Holding stand, 120...Exposure unit, 123...Mask member, 123a...Opening, 125...Shutter, 100...Control device, 201...Image information acquisition unit, 202...Edge information generation unit, 203...Exposure map setting unit, 205...Film formation control unit, 206...Exposure control unit, 86...State detection unit, 87...Peripheral edge measurement sensor, 88...Distance sensor, 115...Y-axis direction adjustment unit, 116...Z-axis direction adjustment unit.

Claims

1. Based on an image obtained by imaging the peripheral region on the surface of a substrate on which a first coating is formed, edge information is generated that shows the relationship between the circumferential position around the center of the substrate and the outer edge position of the first coating in the radial direction of the substrate. Based on the edge information, an exposure map is set that shows the relationship between the circumferential position and the set value of the exposure width in the radial direction. After the aforementioned image is obtained, a second coating is formed on at least the peripheral region of the surface, After the second coating is formed, information on the warping of the substrate is obtained, Based on the warpage information, the relationship between the circumferential position and the exposure position information of the substrate is set in the exposure map, A substrate processing method comprising exposing the second coating in the peripheral region according to the exposure map.

2. The substrate processing method according to claim 1, wherein in the exposure map, the exposure width is set such that the position of one end of the exposure range closest to the center of the substrate is shifted by a certain amount from the outer edge position indicated by the edge information.

3. In the exposure map, the exposure width is set for each predetermined angle. The substrate processing method according to claim 1 or 2, wherein the edge information provides the outer edge position for each predetermined angle.

4. After exposure according to the exposure map, development is performed so that the second coating remains in the peripheral region. A second image is obtained by imaging the peripheral region on the surface of the substrate after development of the second coating, Based on the second captured image, cut information is generated that shows the relationship between the circumferential position and the inner edge position of the second coating in the radial direction. The substrate processing method according to claim 1 or 2, further comprising determining whether or not the exposure to the second film is normal based on the result of comparing either the edge information or the exposure map with the cut information.

5. After exposure is performed according to the exposure map, development is carried out so that the portion of the second coating located in the peripheral region is removed. A second image is obtained by imaging the peripheral region on the surface of the substrate after development of the second coating, Based on the second captured image, cut information is generated that shows the relationship between the circumferential position and the outer edge position of the second coating in the radial direction. The substrate processing method according to claim 1 or 2, further comprising determining whether or not the exposure to the second film is normal based on the result of comparing either the edge information or the exposure map with the cut information.

6. Exposure to the second coating is The surface is irradiated with exposure light through a mask member having an opening, A substrate processing method according to claim 1 or 2, comprising moving the mask member in the radial direction to change the exposure width according to the exposure map.

7. Exposure to the second coating is The surface is irradiated with exposure light through a mask member provided with an opening and a shutter that can adjust the opening of the opening, A substrate processing method according to claim 1 or 2, comprising adjusting the opening of the shutter so as to change the exposure width according to the exposure map.

8. Exposure to the second coating is The process involves irradiating the surface of the substrate held in the holding unit with exposure light from an irradiation unit capable of irradiating exposure light, A substrate processing method according to claim 1 or 2, comprising moving the holding portion to change the exposure width according to the exposure map.

9. Obtaining the aforementioned warping information is possible. To obtain the position of the peripheral edge of the aforementioned substrate, Obtain the distance of the outer edge of the substrate from the surface of the substrate perpendicular to the substrate, The substrate processing method according to claim 1 or 2, comprising obtaining the position of the peripheral edge and the vertical distance by measurement from the back side of the substrate.

10. The substrate adjustment position is calculated from the difference between the position of the peripheral edge and a preset reference position, and this is set as the exposure position information in the exposure map. Adjusting the position of the holding part that holds the substrate based on the substrate adjustment position, The substrate processing method according to claim 9, including the method described in claim 9.

11. Exposure to the second coating is The surface is irradiated with exposure light through a mask member having an opening, The mask height adjustment value, which is calculated from the difference between the vertical distance of the outer edge portion from the surface of the substrate and a preset reference position, is set in the exposure map as exposure position information. The substrate processing method according to claim 9, further comprising adjusting the position of the mask member based on the mask height adjustment value.

12. The substrate adjustment position, which is the exposure position information derived from a correlation formula between the difference between the distance of the outer edge portion perpendicular to the surface of the substrate and a preset reference position, and a position adjustment value for adjusting the radial position of the substrate, is set in the exposure map. The substrate processing method according to claim 11, further comprising adjusting the position of a holding portion that holds the substrate based on the substrate adjustment position.

13. Exposure to the second coating is The surface is irradiated with exposure light through a mask member having an opening, The system determines contact with the mask member based on information acquired by the distance sensor, The substrate processing method according to claim 9, further comprising: if contact is determined to have occurred, changing the vertical position of the holding portion that holds the substrate to a second position lower than the first position.

14. In the exposure map, the exposure width is set for each predetermined angle. The reference position for setting the exposure width is determined from the difference in exposure width for each predetermined angle. Setting the exposure width in accordance with the aforementioned reference position, and The substrate processing method according to claim 2, including the method described in claim 2.

15. A coating forming unit that forms a coating on the surface of the substrate, A holding portion for holding the substrate, A peripheral exposure unit that performs exposure on the peripheral region of the surface of the substrate held by the holding unit, An image information acquisition unit acquires an image obtained by imaging the peripheral region on the surface of the substrate in which the first coating is formed on the surface, An edge information generation unit generates edge information that shows the relationship between the circumferential position around the center of the substrate and the outer edge position of the first coating in the radial direction of the substrate, based on the captured image. After the aforementioned image is obtained, a film formation control unit controls the film formation unit to form a second film on at least the peripheral region of the surface, After the film formation control, a state detection unit acquires information on the warping of the substrate, An exposure map setting unit sets an exposure map that shows the relationship between the circumferential position, the set value of the exposure width in the radial direction, and the exposure position information of the substrate, based on the edge information and the warpage information. A substrate processing apparatus comprising: an exposure control unit that controls the peripheral exposure unit and the holding unit to expose the second coating in the peripheral region according to the exposure map.

16. The state detection unit, A peripheral edge measuring sensor for measuring the position of the peripheral edge of the substrate, The system includes at least one distance sensor for measuring the distance of the outer edge of the substrate from the surface of the substrate in a direction perpendicular to the substrate, The substrate processing apparatus according to claim 15, wherein the peripheral edge measuring sensor and the distance sensor are provided at positions facing the back surface of the substrate.

17. The holding portion includes a radial adjustment portion for adjusting the radial position of the substrate, The exposure map setting unit sets the substrate adjustment position as exposure position information based on the difference between a preset reference position and the measurement value of the peripheral edge measuring sensor at predetermined angles. The substrate processing apparatus according to claim 16, wherein the exposure control unit adjusts the radial adjustment unit at predetermined angle intervals in accordance with the substrate adjustment position.

18. The peripheral exposure section includes a mask member that adjusts the range of light exposed to the surface of the substrate, The mask member is equipped with a drive unit that adjusts the position of the mask member in a direction perpendicular to the surface of the substrate, The exposure map sets the mask height adjustment value as exposure position information based on the difference between a preset reference position and the measurement value of the distance sensor at predetermined angles. The substrate processing apparatus according to claim 16, wherein the exposure control unit operates the drive unit at predetermined angles of the substrate based on the mask height adjustment value.

19. The holding portion includes a vertical adjustment portion that adjusts the position perpendicular to the surface of the substrate, The peripheral exposure portion includes a mask member that adjusts the range of light exposed to the surface of the substrate. The exposure control unit, The presence or absence of contact with the mask member is determined from the information acquired by the distance sensor. The substrate processing apparatus according to claim 16, wherein, if contact is determined, the vertical adjustment unit is adjusted to adjust the position of the holding unit to a second position lower than the first position.

20. The holding portion includes a radial adjustment portion for adjusting the radial position of the substrate, The exposure map setting unit is, Based on the correlation formula between the difference between the vertical distance from the surface of the substrate at the outer edge, measured by the distance sensor, and a preset reference position, and the position adjustment value used to adjust the radial position of the substrate, the substrate adjustment position, which serves as the exposure position information, is set at predetermined angle intervals. The substrate processing apparatus according to claim 16, wherein the position of the radial adjustment unit is adjusted at predetermined angle intervals based on the substrate adjustment position.

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