Semiconductor processing unit

Abstract

We disclose information regarding semiconductor processing equipment. [Solution] The semiconductor processing apparatus comprises a process chamber configured to accept a plurality of substrates, at least one accumulator container fluidly communicating with the process chamber configured to store a precursor in a gaseous state, and at least two solid precursor storage containers, each configured to accept a precursor in a gaseous state, convert the accepted gaseous precursor into a solid state inside the respective solid precursor storage container, and convert the solid precursor into a gaseous state. Each of the at least two solid precursor storage containers is fluidly communicating with at least one accumulator container to enable the supply of a gaseous precursor to at least one accumulator container. The at least one accumulator container includes an operable element configured to change the internal volume of the at least one accumulator container when in operation.

Description

Technical Field

[0001] The present disclosure generally relates to semiconductor processing methods, and related structures and devices, and to the fields of device and integrated circuit manufacturing. More particularly, the present disclosure generally relates to a semiconductor processing apparatus in which precursors can be stored in a solid state.

Background Art

[0002] In the field of semiconductor manufacturing equipment, batch processing equipment, such as vertical furnaces, can generally significantly increase throughput compared to single-wafer tools that process wafers one by one.

[0003] However, in order to form a layer of the required thickness in each of the plurality of wafers or substrates contained, the amount of precursor required to be provided in the reaction chamber or process chamber of a vertical furnace is much higher than the amount required to be provided in the reaction chamber of a single-wafer tool to form a layer of the same required thickness. Further, for example, it may be necessary to provide the required amount of precursor within a specific short period of time to provide an acceptable throughput and / or the required precursor pressure in the process chamber.

[0004] Some precursors, such as ammonia, can be stored in a gaseous state for a long time without decomposition. Storage in a gaseous state enables rapid and reliable delivery of the precursor. The supply of such a precursor to the process chamber is relatively simple because the required amount of gas can flow from the sub-fab supply section. Other precursors decompose when stored in a gaseous state and are no longer suitable for use in the deposition process, especially when they need to be stored at a specific temperature to avoid deposition on the surface of the container containing the precursor gas. For such precursors, alternative solutions are needed.

[0005] There is a need for devices and methods that can supply large amounts of vapor-phase precursors on demand and at high flow rates.

[0006] Any discussions, including the problems and solutions described in this section, are included in this disclosure solely for the purpose of providing background to this disclosure, and it should not be considered that any or all of the discussions were known at the time the invention was made, or that they constitute prior art. [Overview of the project]

[0007] The following summary introduces the selected concepts in a simplified form, which are described in more detail below. This summary is not necessarily intended to identify the main or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter. [Means for solving the problem]

[0008] According to a first aspect of the present invention, a semiconductor processing apparatus is provided comprising: a process chamber configured to accept a plurality of substrates; an accumulator container fluidly communicating with the process chamber, the accumulator container configured to store precursors in a gaseous state; and at least two solid precursor storage containers, each configured to accept a precursor in a gaseous state, convert the accepted gaseous precursor into a solid state within its respective solid precursor storage container, and convert the solid precursor into a gaseous phase. Each of the at least two solid precursor storage containers is fluidly communicating with the accumulator container to enable the supply of gaseous precursors to the accumulator container. At least one accumulator container includes an operable element configured to change the internal volume of at least one accumulator container when in operation.

[0009] Providing precursors in gaseous form to solid precursor storage containers may have advantages over providing them in liquid or powder form. Providing precursors dissolved in a liquid, for example, solvent, or otherwise supported, to precursor storage containers, and then evaporating the solvent in the containers, requires an additional drying step in the process of (re)filling the precursor storage containers, which can result in solvent contamination of the precursor being extracted from the containers, and the number of substrates that can be processed may be limited due to capacity limitations, which can affect throughput. Supplying precursors in powder form can cause clogging, and a carrier gas may be required to remove the precursors from the containers.

[0010] By providing at least two solid precursor storage containers, one of the solid precursor storage containers may receive and store the precursor, while the other solid precursor storage container may supply the precursor to the accumulator container, thereby enabling a continuous supply of precursor gas to the accumulator container.

[0011] By providing an accumulator container for short-term storage of precursor gas near the process chamber, high doses of precursor can be collected and supplied to the process chamber in a shorter time than it would take to sublimate the same amount of precursor gas. This enables a faster supply of precursor to the process chamber, thereby increasing throughput.

[0012] The flow rate of precursor gas to the process chamber can be improved by providing an operable element in the accumulator container that can be operated to change the volume of the accumulator container. Furthermore, the vapor flow rate from the solid precursor storage container to the accumulator container can be increased.

[0013] At least one accumulator container may be provided. For example, two or more accumulator containers may be provided in parallel. The semiconductor processing apparatus may include two or more accumulator containers, each configured to receive precursor gas from at least one of at least two solid precursor storage containers and to supply the precursor gas to the process chamber. The two or more accumulator containers may be connected in parallel so that each accumulator container can independently supply precursor gas to the process chamber.

[0014] At least one accumulator container comprises a gas inlet for guiding gas into each accumulator container and a gas outlet for guiding gas out of the accumulator container, and an actuarial element is configured to push gas out of the accumulator container through the gas outlet.

[0015] The operable elements may be configured to draw gas into their respective accumulator containers via gas inlets. The gas inlets may be configured to include a gas inlet valve, and the gas outlets may be configured to include a gas outlet valve.

[0016] The semiconductor processing apparatus may include a controller configured to control the gas inlet valve to be in an open state and the gas outlet valve to be in a closed state in gas extraction mode, and then to actuate an actuated element to reduce the vapor pressure in one of at least two solid precursor storage containers.

[0017] The controller may be configured to control the gas inlet valve to be in a closed state and the gas outlet valve to be in an open state in the gas supply mode, and then to actuate an actuated element to push the gas out of the accumulator container.

[0018] The actuating element may be a piston. The actuating element may be a bellows.

[0019] The accumulator container may include an accumulator container heater.

[0020] The accumulator container heater may include a heating jacket disposed to substantially surround the accumulator container.

[0021] The accumulator container heater may include a temperature regulating element between the heating jacket and the accumulator container.

[0022] The temperature regulating element may include a phase change material.

[0023] The phase change element may be housed within a thermally conductive container.

[0024] The semiconductor processing apparatus may include a precursor exhaust path for removing a precursor gas from the process chamber and a reactant exhaust path for removing a reactant gas different from the precursor gas from the process chamber, and the precursor exhaust path is separated from the reactant exhaust path.

[0025] The precursor exhaust path may include a trap for collecting the precursor.

[0026] The semiconductor processing apparatus may include at least two accumulator containers connected in parallel.

[0027] Each of the at least two solid precursor storage containers may be in fluid communication with a bulk precursor source for providing the precursor in gaseous form.

[0028] By being in fluid communication with the bulk precursor source, it is possible to refill the at least two solid precursor storage containers with the precursor gas without the need to remove them from the semiconductor processing apparatus, enabling long operating times of the semiconductor processing apparatus and as a result increasing throughput.

[0029] Each of the at least two solid precursor storage containers may include its own heater.

[0030] Each of at least two solid precursor storage containers may include a respective gas inlet port configured to introduce a gaseous precursor into the respective solid precursor storage container.

[0031] The semiconductor processing apparatus may include a first gas line for providing a fluid connection between a first solid precursor storage container of at least two solid precursor storage containers and an accumulator container, and a second gas line for providing a fluid connection between a second solid precursor storage container of at least two solid precursor storage containers and the accumulator container.

[0032] The semiconductor processing apparatus may include a first gas flow control valve disposed in the first gas line and a second gas flow control valve disposed in the second gas line. The semiconductor processing apparatus may include a controller configured to set the second gas flow control valve to an open state substantially simultaneously with setting the first gas flow control valve to a closed state.

[0033] The semiconductor processing apparatus may include a third gas line for providing a fluid connection between a bulk precursor supply unit for providing a gaseous precursor and a first solid precursor storage container of at least two solid precursor storage containers, and a fourth gas line for providing a fluid connection between a bulk precursor supply source and a second solid precursor storage container among at least two solid precursor storage containers.

[0034] The semiconductor processing apparatus may include a third gas flow control valve disposed in the third gas line and a fourth gas flow control valve disposed in the fourth gas line. The semiconductor processing apparatus may include a controller configured to set the fourth gas flow control valve to a closed state substantially simultaneously with setting the third gas flow control valve to an open state.

[0035] The semiconductor processing apparatus may include a third gas flow control valve heater for heating the third gas flow control valve and a fourth gas flow control valve heater for heating the fourth gas flow control valve.

[0036] The accumulator container may include an accumulator container heater.

[0037] The semiconductor processing apparatus may include a fifth gas flow control valve, which is located upstream of the accumulator vessel and configured to control the gas flow from one of at least two solid precursor storage vessels into the accumulator vessel.

[0038] The semiconductor processing apparatus may include a sixth gas flow control valve located downstream of the accumulator vessel and configured to control the gas flow from the accumulator vessel into the process chamber.

[0039] The semiconductor processing apparatus may include a fifth gas flow control valve heater. The semiconductor processing apparatus may also include a sixth gas flow control valve heater.

[0040] Each of at least two solid precursor storage containers may include a first heater for heating a portion of the solid precursor storage container closer to its respective gas inlet port, and a second heater for heating a portion of the solid precursor storage container further away from its respective gas inlet port.

[0041] By enabling independent temperature control of different parts of the solid precursor storage container, precursor deposition at or near the gas inlet and / or gas outlet ports can be reduced or avoided during the sublimation of the solid precursor contained in the solid precursor storage container.

[0042] A second aspect of the present invention provides a method for supplying a precursor gas to a process chamber of a semiconductor processing apparatus, comprising: a process chamber configured to accept a plurality of substrates; at least one accumulator container fluidly communicating with the process chamber configured to store a precursor in a gaseous state, the at least one accumulator container having an operable element configured to change the internal volume of at least one accumulator container when in operation; and at least two solid precursor storage containers, each configured to accept a precursor in a gaseous state, convert the accepted gaseous precursor into a solid state inside the respective solid precursor storage container, and convert the solid precursor into a gaseous phase, wherein each of the at least two solid precursor storage containers is configured to fluidly communicate with at least one accumulator container to enable the supply of a gaseous phase precursor to the at least one accumulator container. The method includes (i) receiving a precursor in gaseous form in a first solid precursor storage container of at least two solid precursor storage containers and converting the precursor to a solid state; (ii) converting a solid precursor to a gaseous state in a second solid precursor storage container of at least two solid precursor storage containers and providing the gaseous precursor to an accumulator container; and (iii) supplying a precursor gas from the accumulator container to a process chamber by operating an operable element.

[0043] Steps (i) and (ii) may be carried out substantially simultaneously. Steps (ii) and (iii) may not substantially overlap in time. The method may also include, after step (iii), receiving a gaseous precursor into a second solid precursor storage container and converting the precursor to a solid state, and converting the solid precursor into a gaseous state into a first solid precursor storage container and supplying the gaseous precursor to an accumulator container.

[0044] Allowing a solid precursor storage container to accept a precursor in a gaseous state may include allowing a bulk precursor source to supply the gaseous precursor to the solid precursor storage container. Converting the gaseous precursor to a solid state in the solid precursor storage container may include cooling a portion of the solid precursor storage container to a temperature below the deposition temperature of the precursor. Converting the solid precursor to a gaseous state in the solid precursor storage container may also include heating a portion of the solid precursor storage container to a temperature above the sublimation temperature of the precursor.

[0045] Step (iii) may include heating the precursor gas before operating the operable elements. Heating the precursor gas may include applying energy to the precursor gas using a heater, laser, or microwave radiation device.

[0046] According to a third aspect of the present invention, a method for forming layers on multiple substrates using a semiconductor processing apparatus is provided. The method may include the steps of: causing a first solid precursor storage container to accept a gas precursor from a bulk precursor supply unit while supplying a precursor from a second solid precursor storage container to an accumulator container; operating the operable element to provide a precursor from the accumulator container to a process chamber while causing the first solid precursor storage container to accept a gas precursor from a bulk precursor supply source; providing a purge gas to the process chamber while causing the first solid precursor storage container to accept a gas precursor from a bulk precursor supply source and supplying the gas precursor to the accumulator container to the second solid precursor storage container; providing a second process gas to the process chamber while causing the first solid precursor storage container to accept a gas precursor from a bulk precursor supply source and supplying the gas precursor to the accumulator container to the second solid precursor storage container; and providing a purge gas to the process chamber while causing the first solid precursor storage container to accept a gas precursor from a bulk precursor supply source and supplying the gas precursor to the accumulator container to the second solid precursor storage container.

[0047] In the semiconductor apparatus according to the first embodiment or the method according to the second or third embodiment, the precursor may include molybdenum.

[0048] Other technical features described above may be readily apparent to those skilled in the art from the following drawings, description, and claims.

[0049] For the purpose of summarizing the advantages of the present invention over the prior art, certain objectives and advantages of the present invention are described above herein. Naturally, it can be understood that not all of these objectives or advantages are necessarily achieved according to any particular embodiment of the present invention. Accordingly, it can be recognized by those skilled in the art that the present invention may be embodied or practiced in a manner that achieves or optimizes one or a group of advantages as taught or suggested herein, without necessarily achieving other objectives or advantages that may be taught or suggested herein.

[0050] All of these embodiments are intended to be within the scope of the present invention disclosed herein. These and other embodiments may be readily apparent to those skilled in the art from the following detailed description of certain embodiments with reference to the accompanying drawings, but the present invention is not limited to any particular embodiment disclosed. [Brief explanation of the drawing]

[0051] [Figure 1] This is a schematic diagram of a semiconductor processing apparatus according to an embodiment of the present invention. [Figure 2] This is a schematic cross-sectional view of an accumulator container that may be included in a semiconductor processing apparatus according to an embodiment of the present invention, in a (re)filled state. [Figure 3] This is a schematic cross-sectional view of an accumulator container that may be included in a semiconductor processing apparatus according to an embodiment of the present invention, in a supply state. [Figure 4] This is a schematic cross-sectional view of a bellows accumulator that may be included in a semiconductor processing apparatus according to an embodiment of the present invention. [Figure 5]This is a schematic cross-sectional view of an accumulator container having an accumulator container heater, which may be included in a semiconductor processing apparatus according to an embodiment of the present invention. [Figure 6] This is a schematic cross-sectional view of a solid precursor storage container that may be included in a semiconductor processing apparatus according to an embodiment of the present invention. [Figure 7] This is a schematic cross-sectional view of a process chamber that may be included in a semiconductor processing apparatus according to an embodiment of the present invention. [Figure 8] This is a schematic diagram of a process chamber that may be included in a semiconductor processing apparatus according to an embodiment of the present invention, along with a gas line connected to the process chamber. [Figure 9] This is a flowchart of the method according to an embodiment of the present invention. [Figure 10] Figure 9 shows the gas flow control valve state of the semiconductor processing apparatus in steps S101 and S102 of the method described therein. [Figure 11] Figure 9 shows the gas flow control valve state of the semiconductor processing apparatus during step S103 of the method presented. [Figure 12] This is a flowchart of a deposition method according to an embodiment of the present invention. [Modes for carrying out the invention]

[0052] Specific embodiments of the present invention will be described below as examples with reference to the accompanying drawings.

[0053] It should be understood that the elements in the drawings are illustrated for simplicity and clarity and are not necessarily drawn to actual size. For example, the dimensions of some elements in the drawings may be exaggerated relative to others to help improve understanding of the illustrated embodiments of this disclosure.

[0054] The descriptions of exemplary embodiments of the methods and configurations provided below are illustrative only and intended for illustrative purposes. The following descriptions are not intended to limit the scope of this disclosure or the claims. Furthermore, the enumeration of numerous embodiments having the configurations or steps shown is not intended to exclude other embodiments having additional configurations or steps, or other embodiments incorporating different combinations of the configurations or steps described.

[0055] Whereever two or more elements are described as being "fluidly connected," such description means that a fluid, such as a gas or liquid or a mixture thereof, can flow between the elements in one direction or in both directions. Fluid connection may be achieved, for example, by a gas line, pipe, inlet, outlet, or any combination thereof. Fluid connection may be shut off, for example, by a valve or other flow control element.

[0056] In this disclosure, any two numbers of a variable can constitute a viable range of that variable, and any range shown may include or exclude the endpoints. In addition, any value of a variable shown (whether shown with “approximately” or not) may refer to an exact value or an approximate value, may include its equivalent, and in some embodiments may refer to the mean, median, representative value, principal value, etc. Furthermore, in this disclosure, the terms “include,” “composed of,” and “have” may independently mean “typically or generally comprise,” “compose,” “essentially consist of,” or “consist of.” In this disclosure, the meaning of any defined term does not necessarily exclude the ordinary and customary meanings in some embodiments. In some cases, the percentages shown herein may be relative or absolute percentages.

[0057] It should be noted that while many exemplary materials are given through embodiments of this disclosure, the chemical formulas given to each of the exemplary materials should not be interpreted as restrictive, and the non-restrictive and exemplary materials given should not be limited by any exemplary stoichiometry.

[0058] In this specification, the terms “on top of” or “above” can be understood to be used to describe relative positional relationships. Another element, membrane, or layer may be directly on top of the layer described, or another layer (intermediate layer) or element may be interposed between them, or a layer may be placed on top of the layer described but not completely covering the surface of the layer described. Thus, unless the term “directly” is used separately, the terms “on top of” or “covering over” will be interpreted as relative concepts. Similarly, the terms “below / downward,” “below,” or “below / downward” will be interpreted as relative concepts.

[0059] Referring to Figure 1, a semiconductor processing apparatus 101 according to an embodiment of the present invention is shown. The semiconductor processing apparatus 101 comprises a process chamber 102 configured to receive a plurality of substrates 103 for processing. The plurality of substrates 103 may be supported by a substrate boat 104. The process chamber 102 comprises at least one process chamber gas inlet 105 for allowing gas to enter the process chamber 102, and at least one process chamber gas exhaust port 106 for removing gas from the process chamber 102. The semiconductor processing apparatus 101 comprises an accumulator container 107 in fluid communication with the process chamber 102, the accumulator container 107 configured to store a precursor in a gaseous state. The semiconductor processing apparatus 101 comprises at least two solid precursor storage containers 108, each in fluid communication with the accumulator container 107 to allow the supply of a gaseous precursor to the accumulator container 107. Each of the at least two solid precursor storage containers 108 is configured to convert the solid precursor into a gaseous state. Although Figure 1 illustrates two solid precursor storage containers 108, it will be apparent to those skilled in the art that there may be three or more solid precursor storage containers, for example, three or four or more. Hereinafter, a first solid precursor storage container 109 and a second solid precursor storage container 110 are described, without strictly limiting the present invention to embodiments having two solid precursor storage containers 108.

[0060] The precursor may be one that can be stored in a solid state for a long period of time without significant decomposition. When the precursor needs to be transported between components of the semiconductor processing apparatus 101, it may be converted to a gaseous state when it is supplied, for example, from a solid precursor storage container 108 to an accumulator container 107. The precursor may be stored in a gaseous state for a relatively short period, for example, in the accumulator container 107 before being delivered to the process chamber 102, or in the solid precursor storage container 108 before being delivered to the accumulator container 107.

[0061] Each of at least two solid precursor storage containers 108 may be in fluid communication with a bulk precursor supply source 111 for providing precursors in a gaseous state. The bulk precursor supply source 111 may supply precursors in a gaseous state to the solid precursor storage containers 108 as needed. The bulk precursor supply source 111 may store precursors in a solid state. The bulk precursor supply source 111 may also be a subfab supply unit for supplying precursors to a plurality of semiconductor processing devices 101.

[0062] The semiconductor processing apparatus 101 may include a first gas line 112 for providing a fluid connection between a first solid precursor storage container 109 of at least two solid precursor storage containers 108 and an accumulator container 107, and a second gas line 113 for providing a fluid connection between a second solid precursor storage container 110 of at least two solid precursor storage containers 108 and an accumulator container 107. The first gas line 112 may include a first gas flow control valve 114 for controlling the flow of precursor gas in the first gas line 112. The second gas line 113 may include a second gas flow control valve 115 for controlling the flow of precursor gas in the second gas line 113. The gas flow control valves 114, 115 may be valves having only an open position and a closed position, or valves configured to allow a specific amount of gas flow by being neither fully open nor fully closed. The first gas line 112 may include a first gas flow measuring device for measuring the velocity of the gas flow in the first gas line 112. The second gas line 113 may include a second gas flow measuring device for measuring the velocity of the gas flow in the second gas line 113.

[0063] By providing separate gas lines in which the gas flow can be controlled using separate gas flow control valves, the supply of precursors from each of the at least two solid precursor storage containers 108 to the accumulator container 107 can be controlled.

[0064] The semiconductor processing apparatus 101 may include a third gas line 116 for providing a fluid connection between a bulk precursor supply source 111 and a first solid precursor storage container 109. The third gas line 116 may include a third gas flow control valve 118 for controlling the flow of precursor gas in the third gas line 116. The semiconductor processing apparatus 101 may also include a fourth gas line 117 for providing a fluid connection between a bulk precursor supply source 111 and a second solid precursor storage container 110. The fourth gas line 117 may include a fourth gas flow control valve 119 for controlling the flow of precursor gas in the fourth gas line 117.

[0065] By providing separate gas lines in which the gas flow can be controlled using separate gas flow control valves, the supply of precursors from the bulk precursor source 111 to the solid precursor storage container 108 can be controlled individually. As will be discussed in more detail below, this allows at least one of the two solid precursor containers to supply gas precursors to the accumulator container 107, while at least one of the two solid precursor storage containers 108 can receive gas precursors from the bulk precursor source 111.

[0066] The semiconductor processing apparatus 101 may include a fifth gas flow control valve 120 located upstream of the accumulator container 107 and configured to control the gas flow from one of at least two solid precursor storage containers 108 into the accumulator container 107. In some embodiments, the fifth gas flow control valve 120 may not be installed, and a third gas flow control valve 118 and a fourth gas flow control valve 119 may be used to control the gas from the solid precursor storage containers 108 into the accumulator container 107. The semiconductor processing apparatus 101 may also include a sixth gas flow control valve 121 located between the accumulator container 107 and the process chamber 102 to control the gas flow from the accumulator container 107 to the process chamber 102. The semiconductor processing apparatus 101 may also include heating means for heating the fifth gas flow control valve 120. The semiconductor processing apparatus 101 may also include heating means for heating the sixth gas flow control valve 121.

[0067] The gas flow control valve used in the semiconductor processing apparatus 101 according to an embodiment of the present invention preferably has high flow conductance to minimize flow restriction caused by the passage through the valve, and a high operating temperature to ensure that any condensation of gas in the valve is kept to a minimum.

[0068] The semiconductor processing apparatus 101 may include a second process gas supply source 122 that is in fluid communication with the process chamber 102 for supplying a second process gas to the process chamber 102. The second process gas is different from the precursor gas. A second process gas flow control valve 123 may be provided between the second process gas supply source 122 and the process chamber 102 to control the flow of the second process gas to the process chamber 102. The semiconductor processing apparatus 101 may also include a purge gas source 124 that is in fluid communication with the process chamber 102 for supplying purge gas to the process chamber 102. A purge gas flow control valve 125 may be provided between the purge gas source 124 and the process chamber 102 to control the flow of purge gas to the process chamber 102.

[0069] The semiconductor processing apparatus 101 may be configured to include a fifth gas line 126 that provides a fluid connection between a solid precursor storage container 108 and a process chamber 102, and the accumulator container 107 may be located within the fifth gas line 126. The fifth gas line 126 may include a fifth gas flow control valve 120 and a sixth gas flow control valve 121. In some embodiments, the accumulator container 107 may be a container having an input that fluidly communicates with the fifth gas line 126 and an output that fluidly communicates with the sixth gas line. In some embodiments, the accumulator container 107 may be part of the fifth gas line 126 between the fifth gas flow control valve 120 and the sixth gas flow control valve 121, i.e., a separate container may not be provided.

[0070] The semiconductor processing apparatus 101 may include heaters for each gas flow control valve that controls the gas line through which the precursor gas flows. The multiple heaters may be individually controllable. By heating the gas flow control valve through which the precursor gas flows to a temperature higher than the precursor gas deposition temperature, the deposition of the precursor on the gas flow control valve can be prevented, thereby avoiding clogging of the gas flow control valve. The gas flow control valve may be configured to be heated continuously using its respective heater, or it may be heated only when it is open to allow the precursor gas to flow through it.

[0071] Referring to Figure 2, an accumulator container 107 that may be included in a semiconductor processing apparatus 101 according to an embodiment of the present invention is shown. The accumulator container 107 comprises an upper accumulator wall 201, a side accumulator wall 202, and a bottom accumulator wall 203. The accumulator walls enclose an internal volume 204. The accumulator container 107 comprises an actuated element 205, which is shown as a piston 206 in Figure 2, but in some embodiments it may be a bellows or other type of actuated element. In Figure 2, the piston 206 forms the bottom accumulator wall 203 and provides an airtight seal so that air is not permitted inside the accumulator container 107. The actuated element 205 is configured to change the internal volume 204 of the accumulator container 107 when actuated. For example, the piston 206 may move toward the upper accumulator wall 201 to decrease the internal volume 204 of the accumulator container 107. The piston 206 may be moved away from the upper accumulator wall 201 in order to increase the internal volume 204 of the accumulator container 107.

[0072] The accumulator container 107 may include an accumulator gas inlet 207 for guiding gas into the accumulator container 107 and an accumulator gas outlet 208 for guiding gas out of the accumulator container 107. The accumulator gas inlet 207 may be located in the upper accumulator wall 201, the side accumulator wall 202, or the bottom accumulator wall 203. In embodiments where the operable element 205 is a piston 206 forming the wall of the accumulator container 107, the accumulator gas inlet 207 and the accumulator gas outlet 208 may be located in an accumulator wall different from the accumulator wall formed by the piston. For example, in some embodiments, the piston 206 may be configured to form the bottom accumulator wall 203, and the accumulator gas inlet 207 may be located in the upper accumulator wall 201. In some embodiments, the piston 206 may form the bottom accumulator wall 203, and the accumulator gas inlet 207 may be located within the side accumulator wall 202. In some embodiments, the piston 206 may be configured to form the bottom accumulator wall 203, and the accumulator gas outlet 208 may be located within the upper accumulator wall 201. In some embodiments, the piston 206 may be configured to form the bottom accumulator wall 203, and the accumulator gas outlet 208 may be located within the side accumulator wall 202. Generally, the accumulator gas inlet 207 may be configured such that, by acting on an actuated element 205, gas is drawn through the accumulator gas inlet 207 into the accumulator container 107, and the accumulator gas outlet 208 may be configured such that, by acting on an actuated element 205, gas is pushed out through the accumulator gas outlet 208 from the accumulator container 107.

[0073] The accumulator gas inlet 207 may include an accumulator inlet valve 209 for controlling the flow of gas into the accumulator container 107. The accumulator gas outlet 208 may include an accumulator outlet valve 210 for controlling the flow of gas out of the accumulator container 107. In an accumulator container (re)filling process in which a precursor gas is supplied to the accumulator container 107 from at least one of two solid precursor storage containers 108 through the accumulator gas inlet 207, the accumulator inlet valve 209 may be set to an open state (e.g., by the controller 127) and the accumulator outlet valve 210 may be set to a closed state (e.g., by the controller 127), as illustrated in Figure 2. In some embodiments, at the start of the accumulator container (re)filling process, the actuated element 205 may be positioned or set such that the internal volume 204 of the accumulator container 107 is smaller than the internal volume 204 of the accumulator container 107 at the end of the accumulator container (re)filling process. Thus, the process of (re)filling the accumulator container 107 with precursor gas may include acting the actuated element 205 to increase the internal volume 204 of the accumulator container 107 (e.g., by the controller 127). With the accumulator outlet valve 210 closed and the accumulator inlet valve 209 open, the vapor pressure of at least one of the at least two solid precursor storage containers 108 may be reduced, which may help to promote the sublimation of the solid precursor, increase the flow rate of precursor gas into the accumulator container 107, and reduce the time required to (re)fill the accumulator container 107.

[0074] The amount of reduction in the internal volume 204 achieved by the actuated element 205 during the supply of the precursor to the process chamber 102 may vary depending on the required precursor flow rate. The controller 127 may cause the actuated element 205 to continue reducing the volume to maintain the precursor flow rate to the process chamber 102 at a desired value. In embodiments where the actuated element 205 is a piston 206 forming the wall of the accumulator vessel 107, and the accumulator gas inlet 207 is provided in a wall perpendicular to the wall provided by the piston 206, the controller 127 may be configured to prevent the piston 206 from moving beyond the position of the accumulator gas inlet 207.

[0075] In some embodiments, in the accumulator container supply process in which a precursor gas is supplied from the accumulator container 107 to the process chamber 102 through the accumulator gas outlet 208, the accumulator inlet valve 209 may be configured to be closed (e.g., by the controller 127), as shown in Figure 3, and the accumulator outlet valve 210 may be configured to be open (e.g., by the controller 127). In some embodiments, at the start of the accumulator container supply process, the actuated element 205 may be positioned or configured such that the internal volume 204 of the accumulator container 107 is greater than the internal volume 204 of the accumulator container 107 at the end of the accumulator container supply process. Therefore, the accumulator container supply process may include acting on the actuated element 205 to reduce the internal volume 204 of the accumulator container 107 (e.g., by the controller 127). This makes it possible to supply a larger amount of precursor gas to the process chamber 102 within a set duration when the precursor gas is actively pushed out of the accumulator container 107, compared to a passive flow situation where the accumulator outlet valve 210 is opened without changing the internal volume 204 of the accumulator container 107. Furthermore, by reducing the internal volume 204 as the amount of precursor gas in the accumulator container 107 decreases, it is possible to avoid or reduce the temperature drop of the accumulator container 107 caused by a decrease in the internal pressure of the accumulator container 107.

[0076] Referring to Figure 4, the bellows accumulator 401 may include an expandable / contractable vessel 402 having a precursor gas inlet 403 and a precursor gas outlet 404. The first end 405 of the vessel 402 may be connected to the first end 406 of a push / pull actuator 408. The second end 407 of the push / pull actuator 408 may float within the containment volume 409. The push / pull actuator 408 may be moved by changing the gas pressure within the containment volume 409, for example by inserting or removing gas through the gas ports of the containment volume 409. By moving the push / pull actuator 408, the bellows vessel 402 is compressed or expanded, and its internal volume is modified.

[0077] Referring to Figure 5, in some embodiments, the accumulator container 107 includes an accumulator container heater 501 configured to heat the accumulator container 107. Maintaining the precursor gas in the accumulator container 107 at a set temperature may be important, for example, for calculating the amount of precursor gas supplied to the process chamber 102 during the precursor supply process. The accumulator container heater 501 may be in the form of a heating jacket disposed to substantially surround the accumulator container 107. Gaps or channels within the accumulator container heater 501 may be provided to accommodate the accumulator gas inlet 207, the accumulator gas outlet 208, and a optionally operable element 205 or a part thereof, such as a piston rod. The accumulator container heater 501 may include one or more heater wire elements for providing resistance heating. The accumulator container heater 501 may be controllable by a controller 127.

[0078] In some situations, the accumulator container heater 501 may not supply a uniform temperature to the accumulator container 107. For example, there may be slight variations from the setpoint temperature between the heating elements contained within the accumulator container heater 501. This can lead to inaccurate dose calculations. In some embodiments, the accumulator container 107 includes a temperature control element 504 positioned between the accumulator container heater 501 and the accumulator container 107. The temperature control element 504 can store excess energy supplied by the accumulator container heater 501 and transfer a constant temperature to the accumulator container 107. This can help improve the temperature uniformity of the accumulator container 107.

[0079] The temperature control element 504 may include a phase change material 505. The phase change material 505 may have a phase change temperature that is within a desired temperature range of the accumulator vessel 107, and thus provide temperature damping that can reduce the temperature of the accumulator vessel heater 501 below or overshoot. The phase change material 505 may consist of, for example, adipic acid with a phase change temperature of 152°C, or d-mannitol with a phase change temperature of 165°C. The temperature control element 504 may also include a thermally conductive container 506 for housing the phase change material 505. The thermally conductive container 506 may consist of, for example, aluminum. The thermally conductive container 506 may be configured to allow a volume change of the phase change material 505 in conjunction with the phase transition.

[0080] Referring to Figure 6, an embodiment of a solid precursor storage container 601 that may be included in a semiconductor processing apparatus 101 according to an embodiment of the present invention is shown. The solid precursor storage container 601 has an upper wall 602, a bottom wall 603, and side walls 604, a gas inlet port 605, and a gas outlet port 606. The gas inlet port 605 may be provided in the upper wall 602. The gas outlet port 606 may be provided in the upper wall 602. The gas inlet port 605 provides a conduit for the precursor gas to flow into the solid precursor storage container 601 and may be in fluid communication with a bulk precursor supply source. The gas outlet port 606 provides a conduit for the precursor gas to flow out of the solid precursor storage container 601 and may be in fluid communication with an accumulator container 107.

[0081] The solid precursor storage container 601 includes an upper wall heater 607 for heating the upper wall 602, a side wall heater 608 for heating the side wall 604, and a bottom wall heater 609 for heating the bottom wall 603. The upper wall heater 607, side wall heater 608, and bottom wall heater 609 are individually controllable. The solid precursor storage container 601 may also include a solid precursor storage container controller 610 comprising an upper wall heater controller 611, a side wall heater controller 612, and a bottom wall heater controller 613, each of which can be operated independently.

[0082] The upper wall heater controller 611 may be configured to prevent the deposition of precursor on the upper wall 602 of the solid precursor storage container 601 by maintaining the temperature of the upper wall 602 of the solid precursor storage container 601 at a temperature higher than the deposition temperature of the precursor gas while the precursor is being supplied from the bulk precursor source to the solid precursor storage container 601. The side wall heater controller 612 may be configured to prevent the deposition of precursor on the side wall 604 of the solid precursor storage container 601 by maintaining the temperature of the side wall 604 of the solid precursor storage container 601 at a temperature higher than the deposition temperature of the precursor gas while the precursor is being supplied from the bulk precursor source to the solid precursor storage container 601. The bottom wall heater controller 613 may be configured to cause the deposition of precursor on the bottom wall 603 of the solid precursor storage container 601 by maintaining the temperature of the bottom wall 603 of the solid precursor storage container 601 at a temperature lower than the deposition temperature of the precursor gas while the precursor is being supplied from the bulk precursor source to the solid precursor storage container 601.

[0083] The top wall heater 607 may be considered a heater for heating the first section 614 of the solid precursor storage container 601, which is closer to the gas inlet port 605 and / or the gas outlet port 606, and the bottom wall heater 609 may be considered a heater for heating the second section 615 of the solid precursor storage container 601, which is further away from the gas inlet port 605. By providing separately controllable heaters for the first section 614 and the second section 615, the temperatures of these sections can be controlled to promote precursor deposition in or near the second section 615 and to prevent precursor deposition in or near the first section 614. For example, while the solid precursor storage container 601 is being refilled with a gaseous precursor, the bottom wall heater 609 may be controlled (e.g., using a bottom wall heater controller 613) to maintain the bottom wall 603 at a temperature lower than the precursor deposition temperature, and the top wall heater 607 may be controlled (e.g., using a top wall heater controller 611) to maintain the top wall 602 at a temperature higher than the precursor deposition temperature. The solid precursor storage container 601 is shown in Figure 7 as containing a solid precursor 616, but the solid precursor 616 may be emptied at a specific point in time, for example, before the first filling or during the refilling process.

[0084] Referring to Figure 7, an embodiment of a process chamber 701 that may be included in the semiconductor processing apparatus 101 is shown in more detail. The present invention is not limited to a semiconductor processing apparatus 101 comprising the specific process chamber 701 shown in Figure 8, and other types of process chambers 701 having similar or different configurations may be used instead of the process chamber 701 shown in Figure 8. The process chamber 701 may generally be bell jar shaped. The process chamber may be surrounded by heating means such as one or more heat-resistant heating coils 702 powered by a power source (not shown). The heating means provide heat to the process chamber 701, thereby heating the internal volume 703 of the process chamber 701. The process chamber 701 may be made of quartz, silicon carbide, silicon or another suitable heat-resistant material.

[0085] The process chamber 701 may be supported at its lower end on the flange 704 to partially close the open end 705 of the process chamber 701. The substrate boat 706 may enter and / or exit the process chamber through a central furnace opening 707 provided in the flange 704. A vertically movable door 708 may be configured to close the central furnace opening 707 and may be configured to support the substrate boat 706. The substrate boat 706 is configured to support a plurality of substrates 709. The substrate boat 706 may be inserted into the process chamber 701 while empty, i.e., without supporting any substrates 709. The substrates 709 may, in some cases, be dummy wafers not intended for further manufacturing. The substrate boat 706 may support, for example, 100, 121, 150, 170, or more than 170 substrates.

[0086] A base 710 may be provided on the door 708. The base 710 may be rotated to rotate the base boat 706. The process chamber 701 includes at least one process chamber gas inlet 711 for providing gas inflow into the process chamber. The process chamber gas inlet 711 may be at least partially included in a flange 704. The flange 704 may include a process chamber gas exhaust port 712 for removing gas from the process chamber. The process chamber gas exhaust port 712 may be connected to a vacuum pump 713.

[0087] The process chamber gas inlet 711 may be configured to provide an inflow into one or more process chambers of process gases (e.g., precursor gases), purge gases, and cleaning gases. In some embodiments, separate process chamber gas inlets 711 may be provided for each of one or more process gases and purge gases, and optionally for cleaning gases.

[0088] An injector 714 may be provided at the process chamber gas inlet 711, constructed and positioned within the process chamber 701 so as to extend vertically along the wall of the process chamber 701 toward a higher end into the internal space of the process chamber 701. The injector 714 may have an injector opening for injecting gas toward the substrate 709. In some embodiments, the injector 714 may have multiple injector openings distributed along the vertical direction of the injector. In some embodiments, the injector 714 may have a single opening at the upper end of the injector 714 opposite the end of the injector 714 that connects to the process chamber gas inlet 711. In some embodiments, no injector 714 is provided, and the gas flows upward from the process chamber gas inlet 711 without its flow being directed by an injector. In some embodiments, the process chamber gas inlet 711 with an injector may be provided in addition to an additional process chamber gas inlet 711 not connected to an injector.

[0089] One or more thermocouples 715 may be provided inside the process chamber 701 to measure the temperature inside the process chamber 701. Each thermocouple 715 may be provided in a different heating zone of the process chamber 701 corresponding to each heating coil 702.

[0090] Referring again to Figure 1, the semiconductor processing apparatus 101 may include a controller 127 configured to control one or more elements of the semiconductor processing apparatus 101. For example, the controller 127 may be configured to control the state of gas flow control valves such as a first gas flow control valve 114, a second gas flow control valve 115, a third gas flow control valve 118, a fourth gas flow control valve 119, a fifth gas flow control valve 120, a sixth gas flow control valve 121, a purge gas flow control valve 125, a second process gas flow control valve 123, and / or the heaters for each of them. The controller 127 may also be configured to control an accumulator inlet valve, an accumulator outlet valve, an operable element, and an accumulator container heater. The controller 127 may also be configured to control the top wall heater 607, side wall heater 608, and bottom wall heater 609 of the solid precursor storage containers 601 and 108. The upper wall heater controller 611 may be located within the controller 127. The side wall heater controller 612 may be located within the controller 127. The bottom wall heater controller 613 may be located within the controller 127. The controller 127 may be configured to control the heating coil 702 of the process chamber 102. The controller 127 may be configured to receive data from various sensors included in the semiconductor processing apparatus 101, such as thermocouples 715 of the process chamber 102, 701, and to control one or more elements of the semiconductor processing apparatus 101 based on the received data. For example, the controller 127 may be configured to store a set of instructions in its memory for carrying out a method according to an embodiment of the present invention, and may also be configured to load such instructions into a processor configured to execute the instructions for carrying out the method.

[0091] Referring to Figure 8, in some embodiments, the process chamber 102 comprises two or more gas exhaust ports. The process chamber 102 may comprise a precursor gas exhaust port 801 and a separate reactant / purge gas exhaust port 802. The precursor gas exhaust port 801 may be configured to fluidly communicate with a precursor gas exhaust line 803, and the reactant / purge gas exhaust port 802 may fluidly communicate with a reactant / purge gas exhaust line 804, which is separate from the precursor gas exhaust line 803. The precursor gas exhaust line 803 and the reactant / purge gas exhaust line 804 may be rejoined upstream of the vacuum pump 805. The reactant may also be called a second process gas.

[0092] The precursor gas exhaust line 803 may include a precursor trap 806 for condensing the precursor gas. The precursor trap 806 may be water-cooled to maintain it at a temperature lower than the deposition or condensation temperature of the precursor gas. Since not all of the precursor gas supplied to the process chamber 102 is consumed in the deposition process, waste of expensive precursor gas can be reduced by collecting unused precursor gas in the precursor trap 806. The precursor collected in the precursor trap 806 can be reused in subsequent deposition processes. By separating and holding the reactants and precursors in separate gas lines when exhausting the process chamber 102, it is possible to prevent the precursor gas from reacting with the reactants and to recover it for further use. The precursor gas exhaust line 803 may include a first valve 807 upstream of the precursor trap 806 to prevent reactants from entering the precursor trap 806. The precursor gas exhaust line 803 may include a second valve 808 downstream of the precursor trap 806 to prevent the backflow of reactants into the precursor trap 806. The reactant / purge gas exhaust line 804 may include a third valve 809. The first, second, and third valves allow selection of the exhaust path depending on the process step. During the process step in which the precursor gas is supplied to the process chamber 102, for example, step S202 as described in more detail below, the first valve 807 and the second valve 808 of the precursor gas exhaust line 803 may be set to the open position, and the third valve 809 of the reactant / purge gas exhaust line 804 may be set to the closed position. As will be described in more detail below, during the process step in which the reactant gas is supplied to the process chamber 102, for example step S204, the first valve 807 and the second valve 808 in the precursor gas exhaust line 803 may be configured to be closed, and the third valve 809 in the reactant / purge gas exhaust line 804 may be configured to be open.

[0093] Referring to Figure 9, a flowchart of a method according to an embodiment of the present invention for supplying a precursor gas to the process chamber 102 of a semiconductor processing apparatus 101 is shown. The method includes the steps of: allowing a precursor to be received in gaseous form into a first solid precursor storage container 109 of at least two solid precursor storage containers 108 and converting the precursor to a solid state (step S101); allowing a solid precursor stored in a second solid precursor storage container 110 of at least two solid precursor storage containers 108 to be converted to a gaseous state and providing the gaseous precursor to an accumulator container 107 (step S102); and causing a precursor gas to be supplied from the accumulator container 107 to the process chamber 102 by operating an operable element (step S103). Steps S101 and S102 are preferably performed simultaneously.

[0094] In step S101, allowing the first solid precursor storage container 109 to accept the precursor in gaseous form may include supplying the precursor gas from the bulk precursor supply source 111 to the first solid precursor storage container 109. Step S101 may also include setting the third gas flow control valve 118 to the open state. In step S101, since the second solid precursor storage container 110 does not need to accept the precursor gas from the bulk precursor supply source 111, step S101 may also include setting the fourth gas flow control valve 119 to the closed state.

[0095] In step S101, converting the precursor received in gaseous form into a solid state in the first solid precursor storage container 109 may include maintaining the temperature of the walls of the first solid precursor storage container 109 at a temperature lower than the deposition temperature of the precursor. This causes the precursor to condense on the walls of the first solid precursor storage container 109. The deposited precursor can then be stored in a solid state until it needs to be supplied to the accumulator container 107 in gaseous form. Storing the precursor in a solid state in the first solid precursor storage container 109 significantly extends the time the precursor can be stored without significant decomposition compared to storing the precursor in a gaseous state. Supplying the precursor to the first solid precursor storage container 109 in gaseous form avoids clogging or contamination problems associated with supplying powdered or liquid precursors. Step S101 may also include maintaining the temperature of a region of the wall of the first solid precursor storage container 109, such as a region near the gas inlet and / or gas outlet of the first solid precursor storage container 109, at a temperature higher than the deposition temperature of the precursor. This helps to avoid the deposition of precursors at and around the inlet and / or outlet, and can reduce the possibility of flow restriction at the inlet and / or outlet. Therefore, the first solid precursor storage container 109 may be configured to include one or more individually controllable heaters configured to heat each area of ​​the wall of the first solid precursor storage container 109.

[0096] In step S102, converting the solid precursor stored in the second solid precursor storage container 110 into a gaseous state may include heating the temperature of the walls of the second solid precursor storage container 110 to a temperature higher than the sublimation temperature of the solid precursor.

[0097] Steps S101 and S102 may be performed substantially simultaneously, i.e., while the first solid precursor storage container 109 undergoes a refilling process by receiving a gaseous precursor and converting it to a solid state, the second solid precursor storage container 110 sublimes the gaseous precursor and provides it to the accumulator container 107. The solid precursor storage container 108 may then switch roles, i.e., while the first solid precursor storage container 109 sublimes the gaseous precursor and provides it to the accumulator container 107, the second solid precursor storage container 110 receives the gaseous precursor and converts it to a solid state. This makes the supply of precursors to the accumulator container 107 continuously available, and as a result, increases the throughput of the semiconductor processing apparatus 101.

[0098] Figure 10 shows the state of the gas flow control valves between steps S101 and S102. During the supply of precursor from the bulk precursor source 111 to the first solid precursor storage container 109, the first solid precursor storage container 109 does not supply precursor gas to the accumulator container 107, so the first gas flow control valve 114 is set to the closed state and the third gas flow control valve 118 is set to the open state. During the supply of precursor from the second solid precursor storage container 110 to the accumulator container 107, the second solid precursor storage container 110 does not accept precursor from the bulk precursor source, so the second gas flow control valve 115 is set to the open state and the fourth gas flow control valve 119 is set to the closed state. The fifth gas flow control valve 120, if present, may be set to the open state, and the sixth gas flow control valve 121, if present, may be set to the closed state. The purge gas flow control valve 125 and the second process gas flow control valve 123 may be opened or closed depending on the conditions of the process chamber 102, for example, depending on which stage of the layer deposition process is being carried out. For example, steps S101 and S102 may be performed during the purge gas supply step and / or the second process gas supply step in the layer deposition process.

[0099] The state of the gas flow control valves during step S103 is shown in Figure 11. When a sufficient amount of gas precursor has accumulated in the accumulator container 107, the sixth gas flow control valve 121 is set to the open position, and the fifth gas flow control valve 120 may be set to the open or closed position. The actuable elements actuate. This allows the precursor gas to flow from the accumulator container 107 to the process chamber 102. During step S103, the second process gas flow control valve 123 and the purge gas flow control valve 125 are closed.

[0100] Step S103 may include heating the precursor gas in the accumulator container by setting the fifth gas flow control valve 120 and the sixth gas flow control valve 121 to a closed state once a sufficient amount of gas precursor has accumulated in the accumulator container 107. The precursor gas may be heated, for example, using an accumulator container heater or by applying energy using a laser or microwave radiation device. Heating the precursor gas in the accumulator container increases the pressure of the precursor gas, and therefore, when the sixth gas flow control valve 121 is opened, the peak flow rate to the process chamber 102 increases. The fifth gas flow control valve 120 and the sixth gas flow control valve 121 may be heated during the precursor gas heating step to avoid condensation of the precursor at the valves.

[0101] After step S103 is completed, the process may be repeated, i.e., steps S101, S102, and S103 are performed again. Steps S101, S102, and S103 may form part of a deposition process for depositing layers of a desired thickness on multiple substrates 103 in the process chamber 102. The deposition process may include repeating steps S101, S102, and S103 multiple times, removing the multiple substrates 103 from the process chamber 102, loading different multiple substrates 103 into the process chamber 102, and a further deposition process for depositing layers of a desired thickness on different multiple substrates 103, including repeating steps S101, S102, and S103.

[0102] The functions of the first solid precursor storage container 109 and the second solid precursor storage container 110 may be swapped, i.e., in step S101, the second solid precursor storage container 110 receives the precursor in gaseous form and converts the precursor to a solid state, and in step S102, the first solid precursor storage container 109 converts the solid precursor stored therein to a gaseous state and provides the gaseous precursor to the accumulator container 107. The aforementioned swapping of functions may occur when the amount of precursor in the second solid precursor storage container 110, which is the solid precursor storage container supplying the precursor to the accumulator container 107, decreases to an amount that is insufficient to supply the required amount of precursor gas for the required number of iterations in step S103. For example, in some embodiments, at least two solid precursor storage containers may be positioned on a load scale to measure the amount of precursor stored in each, and when the measured amount falls below a threshold, the controller may cause the functions of the first solid precursor storage container 108 and the second solid precursor storage container 109 to be swapped. In some embodiments, the functions of the first solid precursor storage container 108 and the second solid precursor storage container 109 may be automatically exchanged between deposition processes.

[0103] The first solid precursor storage container 109 and the second solid precursor storage container 110 may continue to exchange functions depending on the amount of precursor remaining or between deposition processes. Depending on the amount of precursor required for layer deposition, functions may not be exchanged between all deposition processes.

[0104] Referring to Figure 12, a flowchart of the deposition method according to an embodiment of the present invention is shown. The deposition method is carried out using the semiconductor processing apparatus 101 according to an embodiment of the present invention. The deposition method includes the following processes.

[0105] In step S201, while the precursor gas is supplied from the second solid precursor storage container 110 to the accumulator container 107, the first solid precursor storage container 109 is made to accept the gas precursor from the bulk precursor supply source 111. In step S201, the third gas flow control valve 118 is set to the open state, the fourth gas flow control valve 119 is set to the closed state, the first gas flow control valve 114 is set to the closed state, the second gas flow control valve 115 is set to the open state, the fifth gas flow control valve 120 may be set to the open or closed state, and the sixth gas flow control valve 121 is set to the closed state. These processes may be considered preparation or pre-filling steps and may be performed once at the start of a series of iterations of steps S202 to S205.

[0106] In step S202, a precursor gas is supplied from the accumulator container 107 to the process chamber 102 by activating an actuated element, while the first solid precursor storage container 109 receives a gas precursor from the bulk precursor supply source 111. In step S202, the third gas flow control valve 118 is set to open, the fourth gas flow control valve 119 is set to closed, the first gas flow control valve 114 is set to closed, the second gas flow control valve 115 may be set to open or closed, the fifth gas flow control valve 120 may be set to the same state as the second gas flow control valve, and the sixth gas flow control valve 121 is set to open. The second process gas flow control valve 123 and the purge gas flow control valve 125 are set to closed. By supplying the precursor gas to the process chamber 102, the precursor gas may react with the surfaces of the multiple substrates in a self-limiting manner to form a layer containing the precursor on the surfaces of the multiple substrates in the process chamber 102.

[0107] In step S203, purge gas is supplied to the process chamber 102, while the first solid precursor storage container 109 receives the gas precursor from the bulk precursor supply source 111, and the second solid precursor storage container 110 supplies the gas precursor to the accumulator container 107. In step S203, the third gas flow control valve 118 is set to the open state, the fourth gas flow control valve 119 is set to the closed state, the first gas flow control valve 114 is set to the closed state, the second gas flow control valve 115 is set to the open state, the fifth gas flow control valve 120 is set to the open state, and the sixth gas flow control valve 121 is set to the closed state. The purge gas flow control valve 125 is set to the open state, and the second process gas flow control valve 123 is set to the closed state. By supplying purge gas to the process chamber 102, any precursor gases remaining in the process chamber 102 from step S202 may be removed from the process chamber 102 via the process chamber gas exhaust port 106.

[0108] In step S204, the second process gas is supplied to the process chamber 102, while the first solid precursor storage container 109 is made to accept the gas precursor from the bulk precursor supply source 111, and the second solid precursor storage container 110 is made to supply the gas precursor to the accumulator container 107. In step S204, the third gas flow control valve 118 is set to the open state, the fourth gas flow control valve 119 is set to the closed state, the first gas flow control valve 114 is set to the closed state, the second gas flow control valve 115 is set to the open state, the fifth gas flow control valve 120 is set to the open state, and the sixth gas flow control valve 121 is set to the closed state. The purge gas flow control valve 125 is set to the closed state, and the second process gas flow control valve 123 is set to the open state. By supplying a second process gas to the process chamber 102, the second process gas may react with the surfaces of the multiple substrates to form layers containing components and precursors of the second process gas on the multiple substrates.

[0109] In step S205, purge gas is supplied to the process chamber 102, while the first solid precursor storage container 109 receives the gas precursor from the bulk precursor supply source 111, and the second solid precursor storage container 110 supplies the gas precursor to the accumulator container 107. In step S205, the third gas flow control valve 118 is set to the open state, the fourth gas flow control valve 119 is set to the closed state, the first gas flow control valve 114 is set to the closed state, the second gas flow control valve 115 is set to the open state, the fifth gas flow control valve 120 is set to the open state, and the sixth gas flow control valve 121 is set to the closed state. The purge gas flow control valve 125 is set to the open state, and the second process gas flow control valve 123 is set to the closed state. Any second process gases remaining in the process chamber 102 from step S204 may be removed from the process chamber 102 via the process chamber gas exhaust port 106 by supplying a purge gas to the process chamber 102.

[0110] The method may include repeating steps S202 to S205 until a layer of the desired thickness is formed on a plurality of substrates 103 in the process chamber 102. Once a layer of the desired thickness is formed on a plurality of substrates 103 in the process chamber 102, the method may include performing a substrate exchange procedure, which includes cooling the process chamber 102 to the discharge temperature; removing the plurality of substrates 103 from the process chamber 102; dischargeing the plurality of substrates 103 from the substrate boat; loading a different plurality of substrates 103 into the substrate boat; loading the substrate boat into the process chamber 102; pumping down the process chamber 102; stabilizing the temperature of the process chamber 102; and repeating steps S201 to S205 to deposit a layer of the required thickness on a different plurality of substrates 103. Step S201 may be performed during the substrate exchange procedure.

[0111] The method may include, for example, using a load cell to monitor the amount of precursor in the solid precursor storage container supplying the accumulator container 107, and, if the amount falls below a threshold, switching the functions of the first solid precursor storage container 109 and the second solid precursor storage container 110. The controller 127 may be configured to perform the aforementioned monitoring and control by, for example, receiving a measurement from the load cell, comparing the received measurement with a threshold, and, if the received measurement falls below the threshold, switching the functions of the first solid precursor storage container 109 and the second solid precursor storage container 110 by, for example, controlling the gas flow control valve and heater of the solid precursor storage container.

[0112] The precursor may include, for example, molybdenum oxychloride, hafnium chloride, or molybdenum chloride. The second process gas may include, for example, hydrogen, ammonia, ozone, or water vapor. The purge gas may include, for example, nitrogen or argon. In some embodiments, the precursor includes molybdenum oxychloride, the second process gas includes ammonia, and the purge gas includes hydrogen. In some embodiments, the precursor includes molybdenum oxychloride, the second process gas includes hydrogen, and the purge gas includes argon.

[0113] This method may include providing a plurality of substrates in a substrate boat within the semiconductor processing apparatus 101 before step S201.

[0114] For the purpose of summarizing the advantages of the present invention and the advantages achieved over the prior art, certain objectives and advantages of the present invention are described above herein. Naturally, it can be understood that not all of the above-mentioned objectives or advantages are necessarily achieved according to any particular embodiment of the present invention. Accordingly, it can be recognized by those skilled in the art that the present invention may be embodied or practiced in a manner that achieves or optimizes one or a group of advantages as taught or suggested herein, without necessarily achieving other objectives or advantages that may be taught or suggested herein.

[0115] All of these embodiments are intended to be within the scope of the present invention disclosed herein. These and other embodiments may be readily apparent to those skilled in the art from the accompanying drawings and the following detailed description of certain embodiments, but the present invention is not limited to any particular embodiment disclosed.

Claims

1. A process chamber configured to accept multiple substrates, A process chamber configured to store a gaseous precursor and at least one accumulator container in fluid communication with the process chamber, The invention comprises at least two solid precursor storage containers, each configured to receive a gaseous precursor, convert the received gaseous precursor into a solid state within the respective solid precursor storage container, and convert the solid precursor into a gaseous phase, Each of the at least two solid precursor storage containers is in fluid communication with the at least one accumulator container to enable the supply of a gaseous precursor to the at least one accumulator container. A semiconductor processing apparatus comprising at least one accumulator container having an operable element configured to change the internal volume of the at least one accumulator container when in operation.

2. The semiconductor apparatus according to claim 1, wherein the at least one accumulator container comprises a gas inlet for guiding gas into each of the accumulator containers and a gas outlet for guiding gas out of the accumulator container, and the operable element is configured to push gas out of the accumulator container via the gas outlet and draw gas into each of the accumulator containers via the gas inlet.

3. The gas inlet is equipped with a gas inlet valve, and the gas outlet is equipped with a gas outlet valve, The semiconductor apparatus according to claim 2, further comprising a controller configured to control the gas inlet valve to have an open state, control the gas outlet valve to have a closed state, and subsequently activate an element that can be actuated to cause a decrease in the vapor pressure in one of the at least two solid precursor storage containers, in a gas extraction mode.

4. The semiconductor apparatus according to claim 3, wherein the controller is configured to control the gas inlet valve to be in a closed state and the gas outlet valve to be in an open state in the gas supply mode, and then to actuate the operable element to push the gas out of the accumulator container.

5. The semiconductor processing apparatus according to any one of claims 1 to 4, wherein the operable element is a piston or a bellows.

6. The semiconductor processing apparatus according to any one of claims 1 to 4, wherein the at least one accumulator container is equipped with an accumulator container heater.

7. The semiconductor apparatus according to claim 6, wherein the accumulator container heater comprises a heating jacket disposed so as to substantially surround the accumulator container.

8. The semiconductor apparatus according to claim 7, further comprising a temperature control element containing a phase change material between the heating jacket and the accumulator container.

9. A semiconductor processing apparatus according to any one of claims 1 to 4, 7, or 8, comprising at least two accumulator vessels connected in parallel.

10. A precursor exhaust path for removing precursor gas from the process chamber, The process chamber includes a reactant exhaust path for removing a reactant gas different from the precursor gas, The semiconductor apparatus according to any one of claims 1 to 4, 7, or 8, wherein the precursor exhaust path is separated from the reactant exhaust path.

11. The semiconductor processing apparatus according to claim 10, wherein the precursor exhaust path includes a trap for collecting the precursor.

12. A first gas line for providing a fluid connection between the first solid precursor storage container and the accumulator container, among the at least two solid precursor storage containers, The system comprises a second gas line for providing a fluid connection between the second of the at least two solid precursor storage containers and the accumulator container, The semiconductor processing apparatus according to any one of claims 1 to 4, 7, 8, or 11, wherein the first gas line comprises a first gas flow control valve and the second gas line comprises a second gas flow control valve.

13. A third gas line for providing a fluid connection between a bulk precursor supply source for supplying a gaseous precursor and a first of the at least two solid precursor storage containers, wherein the third gas line comprises a third gas flow control valve, A semiconductor apparatus according to any one of claims 1 to 4, 7, 8, or 11, further comprising: a fourth gas line for providing a fluid connection between the bulk precursor supply source and a second of the at least two solid precursor storage containers, wherein the fourth gas line comprises a fourth gas flow control valve.

14. A fifth gas flow control valve is positioned upstream of the accumulator container and configured to control the gas flow from one of the at least two solid precursor storage containers to the accumulator container, A semiconductor apparatus according to any one of claims 1 to 4, 7, 8, or 11, further comprising: a sixth gas flow control valve disposed downstream of the accumulator container and configured to control the gas flow from the accumulator container to the process chamber.

15. A method for supplying a precursor gas to a process chamber of a semiconductor processing apparatus, The aforementioned semiconductor processing apparatus is A process chamber configured to accept multiple substrates, At least one accumulator vessel having fluid communication with the process chamber configured to store a precursor in gaseous form, the at least one accumulator vessel comprising an operable element configured to change the internal volume of the at least one accumulator vessel when in operation, The invention comprises at least two solid precursor storage containers, each configured to receive a precursor in a gaseous state, convert the received gaseous precursor into a solid state within the respective solid precursor storage container, and convert the solid precursor into a gaseous state, Each of the at least two solid precursor storage containers is in fluid communication with the at least one accumulator container so as to enable the supply of a gas phase precursor to the at least one accumulator container. The aforementioned method, (i) A step of receiving a precursor in gaseous form into the first solid precursor storage container of the at least two solid precursor storage containers, and converting the precursor into a solid state, (ii) A step of converting the solid precursor into a gaseous state in the second solid precursor storage container of the at least two solid precursor storage containers, and providing the gaseous precursor to the at least one accumulator container, (iii) A method comprising the step of causing a precursor gas to be supplied from the at least one accumulator container to the process chamber by operating each of the respective operable elements.

16. The method according to claim 15, wherein steps (i) and (ii) are carried out substantially simultaneously.

17. The method according to claim 15 or 16, wherein steps (ii) and (iii) do not substantially overlap in time.

18. The method according to claim 15 or 16, wherein step (iii) comprises heating the precursor gas before activating the operable element.

19. A method for forming layers on multiple substrates using a semiconductor processing apparatus according to any one of claims 1 to 4, 7, 8, or 11, The first solid precursor storage container receives a gas precursor from a bulk precursor supply source while supplying a precursor from a second solid precursor storage container to the accumulator container, The steps include: activating the operable element to provide a precursor from the accumulator container to the process chamber, while causing the first solid precursor storage container to accept a gaseous precursor from the bulk precursor supply source; The steps include providing a purge gas to the process chamber, while simultaneously causing the first solid precursor storage container to receive a gas precursor from the bulk precursor supply source, and causing the second solid precursor storage container to supply the gas precursor to the accumulator container, The steps include providing a second process gas to the process chamber, while simultaneously causing the first solid precursor storage container to receive a gas precursor from the bulk precursor supply source, and causing the second solid precursor storage container to supply the gas precursor to the accumulator container, A method comprising the steps of supplying a purge gas to the process chamber, while causing the first solid precursor storage container to receive a gas precursor from the bulk precursor supply source, and causing the second solid precursor storage container to supply the gas precursor to the accumulator container.

20. A semiconductor processing apparatus according to any one of claims 1 to 4, 7, 8, or 11, wherein the precursor comprises molybdenum, or the method according to claim 15 or 16.

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