Substrate processing method and substrate processing apparatus

Abstract

This technology provides a method for selectively crystallizing silicon-containing films. [Solution] A substrate processing method according to one aspect of the present disclosure comprises preparing a substrate having an amorphous first silicon-containing film that does not come into contact with an amorphous first film, and an amorphous second silicon-containing film that comes into contact with the first film, and heat-treating the substrate at a temperature above the crystallization temperature of the first film and below the crystallization temperature of the first silicon-containing film, wherein the crystallization temperature of the first film is lower than the crystallization temperature of the first silicon-containing film.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing method and a substrate processing apparatus.

Background Art

[0002] Patent Document 1 discloses a technique of forming an amorphous germanium film on an amorphous silicon film and performing heat treatment at an appropriate temperature to first crystallize the amorphous germanium film and then crystallize the amorphous silicon film.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technique capable of selectively crystallizing a silicon-containing film.

Means for Solving the Problems

[0005] A substrate processing method according to an aspect of the present disclosure includes preparing a substrate having an amorphous first silicon-containing film not in contact with an amorphous first film and an amorphous second silicon-containing film in contact with the first film, and heat-treating the substrate at a temperature not lower than the crystallization temperature of the first film and lower than the crystallization temperature of the first silicon-containing film, wherein the crystallization temperature of the first film is lower than the crystallization temperature of the first silicon-containing film.

Effects of the Invention

[0006] According to the present disclosure, a silicon-containing film can be selectively crystallized.

Brief Description of the Drawings

[0007] [Figure 1]This is a flowchart showing the substrate processing method according to the embodiment. [Figure 2] This is a cross-sectional view (1) showing a substrate processing method according to an embodiment. [Figure 3] This is a cross-sectional view (2) showing the substrate processing method according to the embodiment. [Figure 4] This is a cross-sectional view (3) showing the substrate processing method according to the embodiment. [Figure 5] This is a vertical cross-sectional view showing a substrate processing apparatus according to an embodiment. [Figure 6] This is a horizontal cross-sectional view showing a substrate processing apparatus according to an embodiment. [Modes for carrying out the invention]

[0008] Hereinafter, exemplary embodiments of the present disclosure, not limited to those described herein, will be described with reference to the attached drawings. In all attached drawings, identical or corresponding members or components are denoted by the same or corresponding reference numerals, and redundant descriptions are omitted.

[0009] [Substrate processing method] The substrate processing method according to the embodiment will be described with reference to Figures 1 to 4. Figure 1 is a flowchart of the substrate processing method according to the embodiment. Figures 2 to 4 are cross-sectional views showing the substrate processing method according to the embodiment. The substrate processing method according to the embodiment has steps S11 to S13 shown in Figure 1.

[0010] In step S11, the substrate 100 is prepared as shown in Figure 2. The substrate 100 has a silicon film 110, a silicon oxide film 120, a silicon film 130, and a germanium film 150.

[0011] The silicon film 110 is amorphous. The silicon film 110 is undoped. The silicon film 110 has an upper surface 111, a side surface 112 connected to the upper surface 111, and a lower surface 113 connected to the side surface 112. The silicon film 110 forms a recess 114 with two adjacent side surfaces 112 and the lower surface 113 connected to both of these side surfaces 112. For example, the silicon film 110 can be formed by chemical vapor deposition (CVD) using a silicon source gas. The silicon film 110 is an example of a first silicon-containing film.

[0012] The silicon oxide film 120 is provided on top of the silicon film 110. The silicon oxide film 120 covers the upper surface 111, side surface 112, and lower surface 113 of the silicon film 110. The silicon oxide film 120 is provided along the upper surface 111, side surface 112, and lower surface 113 of the silicon film 110. The silicon oxide film 120 is provided so as not to block the opening of the recess 114. For example, the silicon oxide film 120 can be formed by chemical vapor deposition using a silicon source gas and an oxidizing gas, atomic layer deposition (ALD), etc. The silicon oxide film 120 is an example of an insulating film.

[0013] The silicon film 130 is amorphous. The silicon film 130 is undoped. The silicon film 130 is provided on top of the silicon oxide film 120. The silicon film 130 covers the surface of the silicon oxide film 120. The silicon film 130 fills the recesses 114. For example, the silicon film 130 can be formed by chemical vapor deposition using silicon source gas. The silicon film 130 is an example of a second silicon-containing film.

[0014] The germanium film 150 is amorphous. The germanium film 150 is undoped. The crystallization temperature of the germanium film 150 is lower than the crystallization temperatures of the silicon film 110 and the silicon film 130. The germanium film 150 is provided on top of the silicon film 130. The germanium film 150 covers the surface of the silicon film 130. The germanium film 150 is in contact with the silicon film 130. The germanium film 150 is provided with a silicon oxide film 120 sandwiched between it and the silicon film 110. The germanium film 150 is not in contact with the silicon film 110. For example, the germanium film 150 can be formed by chemical vapor deposition using germanium raw material gas. Before forming the germanium film 150, a treatment to remove the native oxide film on the surface of the silicon film 130 may be performed. The germanium film 150 is an example of the first film.

[0015] In step S12, the substrate 100 is heat-treated at a first temperature, which is above the crystallization temperature of the germanium film 150 and below the crystallization temperatures of the silicon films 110 and 130, under the atmosphere of a heat treatment gas. As a result, as shown in Figure 3, the germanium film 150 crystallizes to form a polycrystalline germanium film 160. Furthermore, induced by the crystallization of the germanium film 150, the crystallization of the silicon film 130 progresses from top to bottom, starting from the interface between the polycrystalline germanium film 160 and the silicon film 130, forming a polycrystalline silicon film 140. In contrast, the silicon film 110 is not in contact with the germanium film 150. Therefore, even if the substrate 100 is heat-treated at a first temperature below the crystallization temperature of the silicon film 110, crystallization of the silicon film 110 does not occur in conjunction with the crystallization of the germanium film 150, and the silicon film 110 remains amorphous. As a result, the silicon film 130 can be selectively crystallized relative to the silicon film 110. The first temperature is, for example, 450°C to 550°C.

[0016] In step S13, the substrate 100 is heat-treated at a second temperature that is higher than the first temperature but lower than the crystallization temperatures of the silicon films 110 and 130, under the atmosphere of a heat treatment gas. As a result, as shown in Figure 4, the crystallization of the silicon film 130 progresses from the opening side of the recess 114 toward the bottom surface, and the polycrystalline silicon film 140 is formed up to a deep position in the recess 114. In step S13, as in step S12, the silicon film 110 remains amorphous. As a result, the silicon film 130 can be selectively crystallized relative to the silicon film 110. The second temperature is, for example, 550°C or higher and less than 600°C. The substrate 100 is heat-treated at the second temperature until the polycrystalline silicon film 140 is formed up to the desired position, and step S13 is terminated. The desired position may be a position in the middle of the depth direction of the recess 114, or it may be a position in contact with the bottom surface of the recess 114.

[0017] As described above, according to the substrate processing method of the embodiment, first in step S11, a substrate is prepared having a silicon film 110 that does not come into contact with the germanium film 150 and a silicon film 130 that comes into contact with the germanium film 150. Next, in step S12, the substrate 100 is heat-treated at a first temperature that is above the crystallization temperature of the germanium film 150 and below the crystallization temperatures of the silicon films 110 and 130. In this case, in step S12, the germanium film 150 crystallizes to form a polycrystalline germanium film 160. Also, induced by the crystallization of the germanium film 150, the crystallization of the silicon film 130 progresses from top to bottom, starting from the interface between the polycrystalline germanium film 160 and the silicon film 130, and a polycrystalline silicon film 140 is formed. In contrast, the silicon film 110 is not in contact with the germanium film 150. Therefore, even if the substrate 100 is heat-treated at a first temperature below the crystallization temperature of the silicon film 110, crystallization of the silicon film 110 does not occur in conjunction with the crystallization of the germanium film 150, and the silicon film 110 remains amorphous. As a result, the silicon film 130 can be selectively crystallized relative to the silicon film 110.

[0018] In the substrate processing method according to the embodiment, in step S13, the substrate 100 is heat-treated at a second temperature that is higher than the first temperature and lower than the crystallization temperature of the silicon film 110 and the silicon film 130. By heat-treating the substrate 100 at the second temperature higher than the first temperature, the progress of crystallization of the silicon film 130 can be promoted as compared with the case where the substrate 100 is heat-treated only at the first temperature.

[0019] In the substrate processing method according to the embodiment, heat-treating the substrate 100 at the first temperature and heat-treating the substrate 100 at the second temperature higher than the first temperature are performed in this order. The temperature for crystallizing the germanium film 150 may be lower than the temperature for promoting the crystallization of the silicon film 130. Therefore, by heat-treating the substrate 100 at a relatively low temperature in the initial stage of the heat treatment, the thermal influence on the substrate 100 can be reduced more than when the substrate 100 is heat-treated at a relatively high temperature from the initial stage of the heat treatment.

[0020] Note that a process of removing the polycrystalline germanium film 160 may be performed after step S13. For example, the polycrystalline germanium film 160 can be removed by etching the polycrystalline germanium film 160 with dilute hydrofluoric acid to remove the natural oxide film on the surface of the polycrystalline germanium film 160, and then etching the polycrystalline germanium film 160 with hydrogen peroxide water. Also, for example, the polycrystalline germanium film 160 may be removed by dry etching using an etching gas. As the etching gas, Cl2 is preferably used, but for example, HCl, HBr, HI, Br2, or I2 may be used. However, when the polycrystalline silicon film 140 is a film used as a channel layer for 3D NAND, the polycrystalline germanium film 160 to be removed is formed on the inner wall of a recess with a high aspect ratio, so it is difficult to remove it by dry etching. Therefore, when the polycrystalline silicon film 140 is a film used as a channel layer for 3D NAND, it is preferable to remove the polycrystalline germanium film 160 by wet etching.

[0021] 〔Type of Gas〕 Specific examples of gases used in the substrate processing method according to the embodiment will be described.

[0022] The silicon raw material gas used when forming the silicon films 110 and 130 can be any gas applicable to chemical vapor deposition, and can be a combination of one or more of the following: hydrogenated silane gas, halogen-containing silicon gas, and aminosilane-based gas. Examples of hydrogenated silane gases include SiH4, Si2H6, and Si3H8. Examples of halogen-containing silicon gases include fluorine-containing silicon gases such as SiF4, SiHF3, SiH2F2, and SiH3F; chlorine-containing silicon gases such as SiCl4, SiHCl3, SiH2Cl2, and SiH3Cl; and bromine-containing gases such as SiBr4, SiHBr3, SiH2Br2, and SiH3Br. Examples of aminosilane-based gases include DIPAS (diisopropylaminosilane), 3DMAS (trisdimethylaminosilane), and BTBAS (bistarchal butylaminosilane).

[0023] The silicon source gas used when forming the silicon oxide film 120 can be the same silicon source gas used when forming the silicon film 110 and the silicon film 130. The oxidizing gas used when forming the silicon oxide film 120 can be O2, O3, H2O, NO2, or combinations thereof.

[0024] The germanium raw material gas used when forming the germanium film 150 can be any gas applicable to chemical vapor deposition, such as germanium hydride gas, halogen-containing germanium gas, or aminogermane gas. Examples of germanium hydride gases include GeH4, Ge2H6, and Ge3H8. Examples of halogen-containing germanium gases include fluorine-containing germanium gases such as GeF4, GeHF3, GeH2F2, and GeH3F; chlorine-containing germanium gases such as GeCl4, GeHCl3, GeH2Cl2, and GeH3Cl; and bromine-containing gases such as GeBr4, GeHBr3, GeH2Br2, and GeH3Br. Examples of aminogermane gases include DMAG (dimethylaminogermane), DEAG (diethylaminogermane), BDMAG (bisdimethylaminogermane), BDEAG (bisdiethylaminogermane), and 3DMAG (trisdimethylaminogermane).

[0025] When heat-treating the substrate 100 at the first and second temperatures, inert gases such as nitrogen and argon, or foaming gases can be used as heat treatment gases.

[0026] [Substrate Processing Equipment] Referring to Figures 5 and 6, a substrate processing apparatus 1 capable of carrying out the substrate processing method according to the embodiment will be described. Figure 5 is a vertical cross-sectional view showing the substrate processing apparatus 1 according to the embodiment. Figure 6 is a horizontal cross-sectional view showing the substrate processing apparatus 1 according to the embodiment.

[0027] The substrate processing apparatus 1 is a batch-type apparatus that processes multiple substrates W at once. The substrates W are, for example, semiconductor wafers. The substrate processing apparatus 1 comprises a processing container 10, a gas supply unit 30, an exhaust unit 40, a heating unit 50, and a control unit 90.

[0028] The processing container 10 is capable of reducing the internal pressure. The processing container 10 houses the substrate W. The processing container 10 has an inner tube 11 and an outer tube 12. The inner tube 11 has a cylindrical shape with a ceiling that is open at the lower end. The outer tube 12 has a cylindrical shape with a ceiling that is open at the lower end and covers the outside of the inner tube 11. The inner tube 11 and the outer tube 12 are made of a heat-resistant material such as quartz. The inner tube 11 and the outer tube 12 have a double-tube structure arranged coaxially.

[0029] A housing section 13 for accommodating a gas supply pipe is formed along the longitudinal direction (vertical direction) of the inner pipe 11. For example, a portion of the side wall of the inner pipe 11 is made to protrude outward to form a convex portion 14, and the inside of the convex portion 14 is formed as the housing section 13.

[0030] A rectangular opening 15 is formed along the longitudinal direction on the side wall of the inner tube 11. The opening 15 faces the housing section 13.

[0031] The opening 15 is a gas exhaust port formed to allow the gas inside the inner pipe 11 to be exhausted. The length of the opening 15 is the same as the length of the boat 16, or it is longer than the length of the boat 16 and extends vertically in both directions.

[0032] The lower end of the processing container 10 is supported by a cylindrical manifold 17. The manifold 17 is made of, for example, stainless steel. A flange 18 is formed at the upper end of the manifold 17. The flange 18 supports the lower end of the outer pipe 12. A sealing member 19, such as an O-ring, is provided between the flange 18 and the lower end of the outer pipe 12. This maintains an airtight seal inside the outer pipe 12.

[0033] An annular support portion 20 is provided on the inner wall of the upper part of the manifold 17. The support portion 20 supports the lower end of the inner pipe 11. A lid 21 is airtightly attached to the opening at the lower end of the manifold 17 via a sealing member 22 such as an O-ring. This airtightly closes the opening at the lower end of the processing container 10, i.e., the opening of the manifold 17. The lid 21 is made of, for example, stainless steel.

[0034] A rotating shaft 24 is provided through the center of the lid 21 via a magnetic fluid seal 23. The lower part of the rotating shaft 24 is rotatably supported by an arm 25A of a lifting mechanism 25, which consists of a boat elevator.

[0035] A rotating plate 26 is provided at the upper end of the rotating shaft 24. A boat 16 that holds substrates W is placed on the rotating plate 26 via a quartz warming stand 27. The boat 16 rotates by rotating the rotating shaft 24. The boat 16 moves up and down together with the lid 21 by raising and lowering the lifting mechanism 25. This allows the boat 16 to be inserted into and removed from the processing container 10. The boat 16 can be housed inside the processing container 10. The boat 16 holds multiple substrates W (for example, 50 to 150) in a shelf-like manner. The boat 16 holds multiple substrates W in a substantially horizontal manner with vertical spacing between them.

[0036] The gas supply unit 30 is configured to allow various gases to be introduced into the inner pipe 11. The gas supply unit 30 includes a silicon raw material gas supply unit 31, a germanium raw material gas supply unit 32, an oxidizing gas supply unit 33, and a heat treatment gas supply unit 34.

[0037] The silicon raw material gas supply unit 31 includes a gas supply pipe 31a inside the processing container 10 and a supply channel 31b outside the processing container 10. In the supply channel 31b, a silicon raw material gas source 31c, a mass flow controller 31d, and a valve 31e are provided in order from the upstream side to the downstream side in the direction of gas flow. As a result, the supply timing of the silicon raw material gas from the silicon raw material gas source 31c is controlled by the valve 31e, and the flow rate is adjusted to a predetermined level by the mass flow controller 31d. The silicon raw material gas flows from the supply channel 31b into the gas supply pipe 31a and is discharged from the gas supply pipe 31a into the processing container 10.

[0038] The germanium raw material gas supply unit 32 includes a gas supply pipe 32a inside the processing container 10 and a supply channel 32b outside the processing container 10. In the supply channel 32b, a germanium raw material gas source 32c, a mass flow controller 32d, and a valve 32e are provided in order from the upstream side to the downstream side in the direction of gas flow. As a result, the germanium raw material gas from the germanium raw material gas source 32c is supplied at a timing controlled by the valve 32e and adjusted to a predetermined flow rate by the mass flow controller 32d. The germanium raw material gas flows from the supply channel 32b into the gas supply pipe 32a and is discharged from the gas supply pipe 32a into the processing container 10.

[0039] The oxidizing gas supply unit 33 includes a gas supply pipe 33a inside the processing container 10 and a supply channel 33b outside the processing container 10. In the supply channel 33b, an oxidizing gas source 33c, a mass flow controller 33d, and a valve 33e are provided in order from the upstream side to the downstream side in the direction of gas flow. As a result, the supply timing of the oxidizing gas from the oxidizing gas source 33c is controlled by the valve 33e, and the flow rate is adjusted to a predetermined level by the mass flow controller 33d. The oxidizing gas flows from the supply channel 33b into the gas supply pipe 33a and is discharged from the gas supply pipe 33a into the processing container 10.

[0040] The heat treatment gas supply unit 34 includes a gas supply pipe 34a inside the processing container 10 and a supply channel 34b outside the processing container 10. In the supply channel 34b, a heat treatment gas source 34c, a mass flow controller 34d, and a valve 34e are provided in order from upstream to downstream in the direction of gas flow. As a result, the heat treatment gas from the heat treatment gas source 34c is supplied at a timing controlled by the valve 34e and adjusted to a predetermined flow rate by the mass flow controller 34d. The heat treatment gas flows from the supply channel 34b into the gas supply pipe 34a and is discharged from the gas supply pipe 34a into the processing container 10.

[0041] Each gas supply pipe 31a, 32a, 33a, and 34a is fixed to the manifold 17. Each gas supply pipe 31a, 32a, 33a, and 34a is made of, for example, quartz. Each gas supply pipe 31a, 32a, 33a, and 34a extends linearly in the vertical direction near the inner pipe 11 and then extends horizontally in an L-shape within the manifold 17, thereby penetrating the manifold 17. The gas supply pipes 31a, 32a, 33a, and 34a are arranged side by side along the circumferential direction of the inner pipe 11 and are formed at the same height.

[0042] Multiple outlets 31f, 32f, 33f, and 34f are provided in the inner tubes 11 of each of the gas supply pipes 31a, 32a, 33a, and 34a. Each outlet 31f, 32f, 33f, and 34f is formed at predetermined intervals along the extending direction of each gas supply pipe 31a, 32a, 33a, and 34a. Each outlet 31f, 32f, 33f, and 34f discharges gas horizontally from the radially outer side of the substrate W toward the substrate W. Each outlet 31f, 32f, 33f, and 34f discharges gas parallel to the main surface of the substrate W. The spacing between the outlets is set to be the same as, for example, the spacing between the substrates W held in the boat 16. The height position of each outlet is set to be, for example, an intermediate position between adjacent substrates W in the vertical direction. In this case, each outlet can efficiently supply gas to the opposing surfaces between adjacent substrates W.

[0043] The gas supply unit 30 may mix multiple types of gases and discharge the mixed gas from a single gas supply pipe. Each gas supply pipe 31a, 32a, 33a, 34a may have a different shape or arrangement from one another. The gas supply unit 30 may further include a gas supply pipe for supplying another gas, such as an inert gas.

[0044] The exhaust section 40 exhausts the gas discharged from the inner pipe 11 through the opening 15 and the gas discharged from the gas outlet 41 through the space P1 between the inner pipe 11 and the outer pipe 12. The gas outlet 41 is formed on the upper side wall of the manifold 17, above the support section 20. An exhaust passage 42 is connected to the gas outlet 41. A pressure regulating valve 43 and a vacuum pump 44 are sequentially installed in the exhaust passage 42 to allow exhaust from inside the processing container 10.

[0045] The heating section 50 is provided around the outer tube 12. The heating section 50 is provided, for example, on the base plate 28. The heating section 50 has a cylindrical shape so as to cover the outer tube 12. The heating section 50 includes, for example, a heating element and heats each substrate W in the processing container 10.

[0046] The control unit 90 is an electronic circuit such as a CPU (Central Processing Unit), FPGA (Field Programmable Gate Array), or ASIC (Application Specific Integrated Circuit). The control unit 90 performs the various control operations described in this specification by executing instruction codes stored in memory or by circuit design for special applications.

[0047] The operation of the substrate processing apparatus 1 when implementing the substrate processing method according to the embodiment will now be described. First, the control unit 90 controls the lifting mechanism 25 to load the boat 16 holding the multiple substrates W into the processing container 10, and seals the opening at the lower end of the processing container 10 airtight with the lid 21. The multiple substrates W include the substrate 100 described above. Next, the control unit 90 controls the gas supply unit 30, the exhaust unit 40, and the heating unit 50 to execute the substrate processing method according to the embodiment. This allows for selective crystallization of the silicon film 130 relative to the silicon film 110. Subsequently, the control unit 90 controls the exhaust unit 40 to increase the pressure inside the processing container 10 to atmospheric pressure, and then controls the lifting mechanism 25 to remove the boat 16 from inside the processing container 10.

[0048] As described above, the substrate processing method according to the embodiment can be carried out in the substrate processing apparatus 1.

[0049] The embodiments disclosed herein should be considered in all respects to be illustrative and not restrictive. The above embodiments may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims.

[0050] In the embodiments described above, the case in which the first silicon-containing film and the second silicon-containing film are of the same film type was explained, but the disclosure is not limited thereto. The first silicon-containing film and the second silicon-containing film may be of different film types. For example, the first silicon-containing film and the second silicon-containing film may contain p-type impurities such as boron (B) and n-type impurities such as phosphorus (P). For example, the first silicon-containing film and the second silicon-containing film may contain carbon (C). For example, the first silicon-containing film and the second silicon-containing film may contain germanium (Ge) at a lower concentration than that of the germanium film 150.

[0051] In the embodiments described above, the case in which the first film is a germanium film was explained, but the disclosure is not limited thereto. The first film only needs to have a crystallization temperature lower than the crystallization temperature of the first silicon-containing film and the crystallization temperature of the second silicon-containing film. For example, the first film contains germanium. For example, the first film may be an amorphous silicon-germanium film.

[0052] In the embodiments described above, the case where the insulating film is a silicon oxide film was explained, but the disclosure is not limited thereto. The insulating film may also be a silicon nitride film or a high-dielectric-constant (high-k) film.

[0053] In the above embodiment, a case was described in which the substrate processing apparatus is a batch-type apparatus that processes multiple substrates at once, but the disclosure is not limited thereto. For example, the substrate processing apparatus may be a single-wafer apparatus that processes substrates one at a time. For example, the substrate processing apparatus may be a semi-batch-type apparatus that processes multiple substrates placed on a rotating table in a processing container by moving the rotating table, passing the substrates through multiple processing areas in sequence. [Explanation of Symbols]

[0054] 100 circuit boards 110 Silicone film 130 Silicone film 150 Germanium film

Claims

1. A substrate is prepared having an amorphous first silicon-containing film that does not come into contact with the amorphous first film, and an amorphous second silicon-containing film that comes into contact with the first film. The substrate is heat-treated at a temperature above the crystallization temperature of the first film and below the crystallization temperature of the first silicon-containing film. It has, The crystallization temperature of the first film is lower than the crystallization temperature of the first silicon-containing film. Substrate processing method.

2. Heat treatment of the aforementioned substrate is The substrate is heat-treated at a first temperature, The substrate heat-treated at the first temperature is then heat-treated at a second temperature higher than the first temperature, including, The substrate processing method according to claim 1.

3. Preparing the aforementioned substrate is Forming an insulating film on the first silicon-containing film, Forming the second silicon-containing film on the insulating film, Forming the first film on the second silicon-containing film, including, The substrate processing method according to claim 1.

4. The first silicon-containing film has an upper surface and a side surface connected to the upper surface, The insulating film is formed to cover the upper surface and the side surface of the first silicon-containing film. The substrate processing method according to claim 3.

5. The second silicon-containing film is of the same film type as the first silicon-containing film. A substrate processing method according to any one of claims 1 to 4.

6. The first silicon-containing film and the second silicon-containing film are silicon films. The substrate processing method according to claim 5.

7. The first film contains germanium, A substrate processing method according to any one of claims 1 to 4.

8. The first film is a germanium film or a silicon-germanium film. The substrate processing method according to claim 7.

9. A substrate processing apparatus, A processing container for housing the substrate, A heating unit for heating the substrate housed in the processing container, Control unit and Equipped with, The control unit is configured to control the substrate processing apparatus to house a substrate having an amorphous first silicon-containing film that does not come into contact with an amorphous first film, and an amorphous second silicon-containing film that comes into contact with the first film, within the processing container. The control unit is configured to control the heating unit to heat-treat the substrate at a temperature above the crystallization temperature of the first film and below the crystallization temperature of the first silicon-containing film. The crystallization temperature of the first film is lower than the crystallization temperature of the first silicon-containing film. Circuit board processing equipment.

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