Substrate structure and its electronic device

Abstract

The present invention provides a substrate structure that includes a substrate having multiple through holes and a film layer structure on one side of the substrate. [Solution] The substrate structure of the present invention comprises a substrate, a film layer structure, and a plurality of conductive members. The substrate has a plurality of through holes; each through hole has a accommodating space and an inner surface defining the accommodating space. The film layer structure seals at least a portion of the openings of the plurality of through holes, and the plurality of through holes are located on the surface of the substrate; the film layer structure defines a conductive surface facing the opening, and at least a portion of the conductive surface corresponding to the opening is conductive. The plurality of conductive members are each located within the accommodating spaces of the plurality of through holes, and at least a portion of the conductive members are in contact with the inner surfaces of the plurality of through holes and are electrically connected to the conductive surface of the film layer structure. The conductive members have a cross-section that shows a continuous single medium along the direction of the parallel planes of the substrate.

Description

Technical Field

[0001] The present invention relates to a substrate having a through-hole structure, which can be applied to the fields of semiconductor packages, printed circuit boards, and other electronic components, and particularly relates to a substrate structure, a manufacturing method, and an electronic device thereof.

Background Art

[0002] With the development of miniaturization, high performance, and high integration of electronic products, the substrate structure plays an increasingly important role in electronic packages. However, the through-hole structure in conventional substrates always faces various problems, including poor conductivity, reduced high-frequency performance, etc. Particularly noteworthy is the reliability problem, which is mainly caused by the difference in the coefficient of thermal expansion (CTE) between the substrate material and the metal material. This difference causes stress concentration in specific regions of the substrate when the temperature changes, leading to warping or local damage of the substrate, and ultimately the risk of losing product functions. Due to the comprehensive impact brought by these problems, it is difficult for the conventional structure to meet the functional requirements in various aspects. Therefore, developing a through-hole structure of a substrate that can reduce the risk of thermal stress and improve the overall functions such as miniaturization, high integration, conductive function, and high-frequency requirements has become the focus of research in the current field of electronic packages.

Summary of the Invention

Problems to be Solved by the Invention

[0003] The object of the present invention is to provide a substrate structure, including a substrate having a plurality of through-holes and a film layer structure on one side of the substrate. The substrate structure of the present invention has better reliability.

Means for Solving the Problems

[0004] To achieve the above objective, the substrate structure of the present invention comprises a substrate, a film layer structure, and a plurality of conductive members. The substrate comprises a first surface, a second surface opposite the first surface, and a plurality of through holes; each through hole comprises a accommodating space, an inner surface defining the accommodating space, and two openings located on the first surface and the second surface of the substrate, respectively. The film layer structure is located on either the first surface or the second surface of the substrate and covers at least a portion of the corresponding openings of the plurality of through holes; the film layer structure defines a conductive surface with respect to the surface facing the corresponding opening, and at least a portion of the conductive surface corresponding to the opening is conductive. The plurality of conductive members are each located within the accommodating space of the plurality of through holes, and at least a portion of the conductive members is in contact with the inner surface of the corresponding through hole and is electrically connected to the conductive surface of the film layer structure. At least one conductive member has a cross-section consisting of a continuous single medium along a direction parallel to the first surface or the second surface of the substrate.

[0005] In one embodiment, the substrate is made of glass, ceramic, or glass-ceramics material.

[0006] In one embodiment, the substrate is a single-layer substrate.

[0007] In one embodiment, the substrate is a multilayer substrate, at least one layer of the multilayer substrate contains an organic material, and the thickness of the layer containing the organic material is 100 μm or less.

[0008] In one embodiment, the substrate is a multilayer substrate, and the thickness of each layer of the multilayer substrate is 100 μm or less.

[0009] In one embodiment, the substrate is a multilayer substrate, and at least one of its layers contains PI material.

[0010] In one embodiment, the substrate has a coefficient of thermal expansion (CTE) defined along the horizontal plane, and this coefficient of thermal expansion is 10 ppm / °C or less.

[0011] In one embodiment, the through-hole defines the hole diameter, the substrate defines the substrate thickness, and the ratio of the substrate thickness to the hole diameter is 1 or greater. The hole diameter of the through-hole is the maximum hole diameter, and the substrate thickness is the maximum thickness of the substrate.

[0012] In one embodiment, the diameter of the through-hole is 100 μm or less.

[0013] In one embodiment, the thickness of the substrate is 300 μm or less.

[0014] In one embodiment, the thickness of the substrate is 500 μm or less.

[0015] In one embodiment, the film layer structure includes a conductive structure.

[0016] In one embodiment, the film layer structure includes a conductive structure and an adhesive layer, and the adhesive layer bonds the conductive structure to the substrate.

[0017] In one embodiment, the conductive structure is a single layer of unpatterned conductive layer, or a single layer of copper foil, electroless copper plating layer, sputtered copper layer, or vapor-deposited copper layer.

[0018] In one embodiment, the conductive structure includes one or more patterned conductive layers, and further, the patterned conductive layers include a copper material.

[0019] In one embodiment, the conductive member is in contact with at least a portion of the inner surface of the corresponding through hole by a method other than chemical bonding.

[0020] In one embodiment, the conductive member is a member made of a single conductive material.

[0021] In one embodiment, the conductive member includes a copper material.

[0022] In one embodiment, the conductive member is a member on which a conductive material has been deposited.

[0023] In one embodiment, the conductive member is formed in the corresponding through-hole by an electroplating process using a conductive surface with a film layer structure.

[0024] In one embodiment, the accommodating space of the through hole defines an accommodating volume, and a member volume is defined for each conductive member. The member volume is 90% or more of the accommodating volume of the through hole corresponding to the conductive member.

[0025] In one embodiment, the substrate structure further includes an insulating member. The insulating member includes an insulating material and is disposed between the hole wall of the corresponding through hole and the conductive member. Also, the insulating material defines the inner surface of the through hole, or the insulating material and the hole wall of the through hole jointly define the inner surface of the through hole.

[0026] In one embodiment, the insulating member includes an insulating layer, and the insulating layer is disposed on at least a part of the surface facing the film layer structure of the substrate.

[0027] In one embodiment, the conductive member has an outer surface, and the surface roughness of the outer surface is 0.6 μm or less, or 0.3 μm or less.

[0028] In one embodiment, the surface roughness of the outer surface of the conductive member is the maximum surface roughness of the conductive member or the roughness of the root mean square.

[0029] In one embodiment, the substrate structure further includes a second film layer structure. The second film layer structure is provided on a surface different from the surface where the film layer structure of the substrate is provided, covers another opening of these through holes, and the second film layer structure is electrically connected to the corresponding conductive member.

[0030] In one embodiment, the second film layer structure includes a conductive structure, and the conductive structure may be a single-layer non-patterned conductive layer, a single-layer patterned conductive layer, a plurality of layers of patterned conductive layers, a single-layer copper foil, an electroless copper plating layer, a sputtered copper layer, or a vapor-deposited copper layer.

[0031] In one embodiment, the patterned conductive layer of the second film layer structure includes a copper material.

[0032] In one embodiment, the insulating member includes an insulating layer, which is disposed on at least a portion of the surface facing the film layer structure of the substrate, and is disposed between the second film layer structure and another surface of the substrate.

[0033] In one embodiment, the through-hole is manufactured by laser processing.

[0034] In one embodiment, the substrate structure further includes an externally connected conductive member, which is provided on the opposite side of the film layer structure of the substrate and is electrically connected to the conductive member.

[0035] The present invention relates to an electronic device and includes the above-described substrate structure, a plurality of externally connected conductive members, and a plurality of electronic components. The externally connected conductive members are connected to the film layer structure of the substrate structure. The film layer structure is arranged between the conductive members and the externally connected conductive members and is electrically connected to the conductive members. The electronic components are electrically connected to the externally connected conductive members.

[0036] In one embodiment, an electronic component is located between another electronic component and a substrate structure.

[0037] In one embodiment, the electronic component is located between two other adjacent electronic components.

[0038] In one embodiment, the electronic component is an integrated passive component (IPD) or a light-emitting diode (LED).

[0039] The present invention also relates to a method for manufacturing a substrate structure. The method includes the steps of preparing a substrate assembly comprising a substrate and a film layer structure, wherein the substrate has a plurality of through holes and the film layer structure has openings covering the through holes, and depositing a conductive material in the corresponding through holes to form a conductive member, the conductive member being electrically connected to the film layer structure. The conductive member also has a cross-section consisting of a continuous single medium along a direction parallel to the first or second surface of the substrate.

[0040] More specifically, the substrate of the substrate assembly comprises a first surface, a second surface opposite the first surface, and a plurality of through-holes, each through-hole including a accommodating space, an inner surface defining the accommodating space, and two openings located on the first and second surfaces of the substrate, respectively. A film layer structure is located on either the first or second surface of the substrate and covers at least a portion of the corresponding openings of these through-holes. The film layer structure defines a conductive surface with respect to the surface facing the corresponding opening, and at least a portion of the conductive surface corresponding to the opening is conductive. Furthermore, at least a portion of the conductive structure within the through-hole is in contact with the inner surface corresponding to the through-hole.

[0041] In one embodiment, in the step of preparing a substrate assembly, a substrate having through holes is first prepared, and then the film layer structure is placed on either the first or second surface of the substrate and covers at least a portion of the corresponding through hole openings.

[0042] In one embodiment, in the step of preparing a substrate assembly, an undefined substrate is prepared, a film layer structure is placed on the surface of the undefined substrate, and through holes are formed within the undefined substrate to form a substrate, and the surface of the film layer structure is exposed by the opening of the through holes.

[0043] In one embodiment, the film layer structure includes a single-layer patterned conductive layer or a multi-layer patterned conductive layer, the side on which the patterned conductive layer is provided is close to the substrate, and the patterned conductive layer may be an adhesive layer.

[0044] In one embodiment, the substrate assembly further includes a carrier plate, which is located on the side opposite to the side where the film layer structure is bonded to the substrate, and the carrier plate is removed from the film layer structure before or after the conductive material is deposited in the through-holes.

[0045] In one embodiment, through holes are formed by laser processing.

[0046] In one embodiment, the conductive member is in contact with at least a portion of the inner surface of the corresponding through hole by a method other than chemical bonding.

[0047] In one embodiment, the step of depositing a conductive material involves electrically connecting a manufacturing electrode to a surface having conductivity in the film layer structure, and depositing the conductive material into corresponding through-holes on the surface having conductivity in the film layer structure via an electroplating manufacturing process between the two, thereby forming a conductive member.

[0048] In one embodiment, a patterned conductive layer is formed on the second surface of the substrate either during or after the step of depositing the conductive material, the patterned conductive layer covers at least a portion of the corresponding opening, and the patterned conductive layer and the conductive member are electrically connected.

[0049] In one embodiment, after depositing a conductive material to form a conductive member, a removal step is included to remove the portion of the conductive member that protrudes from the substrate.

[0050] In one embodiment, the manufacturing method includes the step of placing an insulating material, which is placed between the through-hole and the conductive member. The insulating material is placed on at least a portion of the hole wall of the through-hole and defines the inner surface of the hole.

[0051] In one embodiment, the manufacturing method includes a step of arranging an insulating material, in which an insulating material is filled into a through-hole before the conductive member is formed, and then an opening step is performed on the insulating material to form an inner hole. The hole wall of the inner hole in the insulating material defines the inner surface of the through-hole in the substrate.

[0052] In one embodiment, after the insulating material is placed or after the internal hole is formed, a polishing step is performed to polish the inner surface of the through hole defined by the internal hole of the insulating material, or to polish the inner surface defined jointly by the insulating material and the hole wall of the through hole.

[0053] In one embodiment, the insulating layer is further positioned on the surface facing the film layer structure of the substrate, and the insulating layer covers at least a portion of the opening of the corresponding through hole.

[0054] In one embodiment, after the insulating layer is formed, the insulating layer is polished.

[0055] In one embodiment, after the insulating layer is formed, multiple window portions are installed in multiple through holes corresponding to the insulating layer.

[0056] In one embodiment, the conductive layer is a copper seed layer.

[0057] In one embodiment, a further number of external conductive members are arranged, and these external conductive members are provided on the opposite side of the film layer structure of the substrate and are electrically connected to the corresponding conductive members.

[0058] In one embodiment, the second film layer structure is further provided on the opposite side of the film layer structure of the substrate, and the second film layer structure includes a conductive structure, the conductive structure being a single-layer unpatterned conductive layer, or one or more layers of patterned conductive layers.

[0059] In one embodiment, multiple external conductive connection members are provided on the opposite side of the film layer substrate.

[0060] In summary, the substrate structure of the present invention has multiple through-holes, and by providing conductive members within these through-holes, the flexibility of arranging electronic components on the substrate can be improved. Furthermore, since the contact between the conductive members and the holes is non-chemical, damage to the substrate due to changes in volume between the conductive members and the substrate caused by temperature changes during each manufacturing process can be avoided, thereby improving the reliability of the substrate structure. [Brief explanation of the drawing]

[0061] [Figure 1A] This figure shows a side cross-section of an embodiment of the substrate structure of the present invention. [Figure 1B] This is a plan view of the through-hole in the substrate structure of the present invention. [Figure 1C] This figure shows a plan view of the conductive structure in the film layer structure of the present invention. [Figure 1D] This figure shows a plan view of the conductive structure in the film layer structure of the present invention. [Figure 2A]This figure shows side cross-sections of several embodiments of the substrate structure of the present invention. [Figure 2B] This figure shows side cross-sections of several embodiments of the substrate structure of the present invention. [Figure 2C] This figure shows side cross-sections of several embodiments of the substrate structure of the present invention. [Figure 2D] This figure shows side cross-sections of several embodiments of the substrate structure of the present invention. [Figure 3A] This figure shows several embodiments of the substrate structure of the present invention, in which a second film layer structure is provided. [Figure 3B] This figure shows several embodiments of the substrate structure of the present invention, in which a second film layer structure is provided. [Figure 3C] This figure shows several embodiments of the substrate structure of the present invention, in which a second film layer structure is provided. [Figure 3D] This figure shows a plan view of the substrate structure of the present invention with insulating material provided in the through-holes. [Figure 3E] This figure shows a plan view of the substrate structure of the present invention with insulating material provided in the through-holes. [Figure 4A] This figure shows an embodiment in which an insulating layer is provided on the substrate structure of the present invention. [Figure 4B] This figure shows an embodiment in which an insulating layer is provided on the substrate structure of the present invention. [Figure 4C] This figure shows an embodiment in which an insulating layer is provided on the substrate structure of the present invention. [Figure 5A] This figure shows an externally connected conductive member arranged on one side of the substrate structure of the present invention. [Figure 5B] This figure shows an externally connected conductive member arranged on one side of the substrate structure of the present invention. [Figure 6A] This figure shows external connecting conductive members arranged on both sides of the substrate structure of the present invention. [Figure 6B] This figure shows external connecting conductive members arranged on both sides of the substrate structure of the present invention. [Figure 7A] This figure shows an embodiment in which electronic components are provided on the substrate structure of the present invention. [Figure 7B] This figure shows an embodiment in which electronic components are provided on the substrate structure of the present invention. [Figure 7C] This figure shows an embodiment in which electronic components are provided on the substrate structure of the present invention. [Figure 8A] This figure shows the flow of the manufacturing method for the substrate structure of the present invention. [Figure 8B] This figure shows the flow of the manufacturing method for the substrate structure of the present invention. [Figure 8C] This figure shows the flow of the manufacturing method for the substrate structure of the present invention. [Figure 8D] This figure shows the flow of the manufacturing method for the substrate structure of the present invention. [Figure 8E] This figure shows the flow of the manufacturing method for the substrate structure of the present invention. [Figure 8F] This figure shows the flow of the manufacturing method for the substrate structure of the present invention. [Figure 9A] This figure shows the flow of another manufacturing method for the substrate structure of the present invention. [Figure 9B] This figure shows the flow of another manufacturing method for the substrate structure of the present invention. [Figure 9C] This figure shows the flow of another manufacturing method for the substrate structure of the present invention. [Figure 9D] This figure shows the flow of another manufacturing method for the substrate structure of the present invention. [Figure 9E] This figure shows the flow of another manufacturing method for the substrate structure of the present invention. [Figure 9F] This figure shows the flow of another manufacturing method for the substrate structure of the present invention. [Figure 10A] This diagram shows the flow of another manufacturing method for the substrate structure of the present invention. [Figure 10B] This diagram shows the flow of another manufacturing method for the substrate structure of the present invention. [Figure 10C] This diagram shows the flow of another manufacturing method for the substrate structure of the present invention. [Figure 10D] This diagram shows the flow of another manufacturing method for the substrate structure of the present invention. [Figure 11A] This figure shows the relative positions of the substrate and the film layer structure in the substrate structure of the present invention. [Figure 11B] This figure shows the relative positions of the substrate and the film layer structure in the substrate structure of the present invention. [Figure 12A] This diagram shows the process of providing insulating material to the holes in the through-holes of the substrate structure of the present invention. [Figure 12B] This diagram shows the process of providing insulating material to the holes in the through-holes of the substrate structure of the present invention. [Figure 12C] This diagram shows the process of providing insulating material to the holes in the through-holes of the substrate structure of the present invention. [Figure 13A] This diagram shows the process of providing an insulating layer and a second film layer structure to the substrate structure of the present invention. [Figure 13B] This diagram shows the process of providing an insulating layer and a second film layer structure to the substrate structure of the present invention. [Figure 13C] This diagram shows the process of providing an insulating layer and a second film layer structure to the substrate structure of the present invention. [Modes for carrying out the invention]

[0062] The following describes a better embodiment of the substrate structure of the present invention with reference to the drawings, and the same elements are denoted by the same reference numerals.

[0063] The advantages and features of the present invention and methods for realizing the present invention will be clearly described in the following embodiments with reference to the drawings. However, the present invention can be embodied in several different forms and should not be construed as being limited to the following embodiments. On the contrary, the embodiments disclosed below are provided to clarify and complete this specification and to fully convey the scope of the claims of the present invention to those skilled in the art, and the present invention is limited only to the claims. For this reason, prior components, operations and techniques are not described in detail in the embodiments to avoid obscuring the technical features of the present invention. Throughout the specification, elements that are the same or approximate are denoted by the same or approximate reference numerals. Throughout the specification, where one element is connected to another element, it is stated that the element is "mechanically connected directly or indirectly" to the other element, or "electrically connected" to the other element, and further permits the insertion of one or more intermediate elements between them. Furthermore, it should be understood that the terminology of this specification "includes" and / or "contains" the above features, integers, steps, operations, elements and / or assemblies, but this does not preclude the presence or addition of one or more other features, integers, steps, operations, elements and / or assemblies, or combinations thereof. Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as those commonly understood by those skilled in the art. Furthermore, it should be understood that terms (for example, those defined in a common dictionary) should be interpreted as having the same meaning in the description of the relevant technology, and not as ideal or overly formal meanings unless explicitly defined herein.

[0064] Please refer to Figure 1A. Figure 1A shows an embodiment of the substrate structure of the present invention. The substrate structure 100A comprises a substrate 10, a film layer structure 20, and a plurality of conductive members 30. The substrate 10 includes a first surface S101, a second surface S102, and a plurality of through holes 11. Each through hole 11 has a accommodating space 12, an inner surface 13 defining the accommodating space 12, and two openings O111 and O112 located on the first surface S101 and the second surface S102, respectively. The film layer structure 20 covers at least a portion of the openings O111 provided on the first surface S101 of the substrate 10 corresponding to these through holes 11. The film layer structure 20 includes a conductive structure 21 and a conductive surface 22, the conductive surface 22 being the surface of the film layer structure 20 facing the substrate 10. At least a portion of the conductive surface 22 corresponding to the openings O111 of the through holes 11 of the substrate 10 is conductive. Furthermore, the film layer structure 20 completely closes the opening O111 corresponding to the through hole 11 located on the first surface S101 of the substrate 10, and the conductive surface 22 faces the opening O111 of the through hole 11, and in particular the conductive surface 22 exposed over at least a portion of the opening O111 is conductive. In some embodiments, the conductive surface 22 defines a plurality of area units 22a, and the area units 22a are exposed in portions of the conductive surface 22 corresponding to these openings O111, and at least a portion of these area units 22a is conductive.

[0065] Each conductive member 30 is located in the accommodating space 12 of the through hole 11, and at least a portion of the conductive member 30 is in contact with the corresponding inner surface 13 of the through hole 11 and is electrically connected to the conductive surface 22 of the film layer structure 20. At least one conductive member 30 is a single medium (material) with a continuous cross-section along the horizontal plane P10 direction of the first surface S101 or second surface S102 of the substrate 10. In Figure 1A, the horizontal plane P10 in this embodiment is a surface that is jointly developed in the first direction X and the second direction Y along the substrate 10.

[0066] In one or more embodiments, one or more conductive members 30 have a continuous single medium in cross-section along the horizontal plane P10 direction of the substrate 10, and since the conductive members 30 are placed in the corresponding through holes 11, one or more conductive members 30 have a continuous single medium in radial cross-section along the through holes 11. Furthermore, a single medium as used herein means that the conductive members 30 are made of the same material in cross-section, and there are no interfaces between these same materials. Such interfaces are those that arise when the conductive members 30 are manufactured by different processes. Moreover, the contact of at least a portion of the conductive member 30 with the inner surface 13 of the through hole 11 as described in the specification includes a mode in which a portion of the conductive member 30 is in contact with the inner surface 13 of the through hole 11, and a mode in which the outer surface of the conductive member 30 is in complete contact with the inner surface 13 of the through hole 11. This shows that the manufacturing method of the conductive member 30 of the present invention eliminates the step of complete contact between the conductive member 30 and the inner surface of the through hole 11.

[0067] Furthermore, since there is no requirement for complete contact between the conductive member 30 and the inner surface 13 of the through hole 11, the conductive member 30 can move or adjust its position freely relative to the substrate 10 during thermal expansion and contraction. In other words, the conductive member 30 can be easily peeled off, removed, or detached from the inner surface 13 of the through hole 11 with only slight external force. As a result, stress is not accumulated in the substrate 10, thus reducing potential risks such as deformation, cracking, breakage, warping, or material fatigue of the substrate 10. The aforementioned slight external force includes, but is not limited to, stress resulting from the difference in the coefficient of thermal expansion (CTE) between the substrate 10 and the conductive member 30, especially when thermal shock occurs. The film layer structure 20 defines two opposing surfaces S201 and S202, one of which faces the substrate 10. In this embodiment, surface S202 is the conductive surface 22, and the conductive surface 22 of the film layer structure 20 faces the substrate. Figure 1B is a plan view of the substrate structure 100A of the present invention, where the through-hole 11 of the substrate 10 further defines a hole wall 14, and if no other material is placed or filled in the through-hole 11, the hole wall 14 becomes the inner surface 13 of the through-hole 11. In this embodiment, since other material such as an insulating material is provided in the accommodation space 12 of the through-hole 11, the hole wall 14 and the inner surface 13 of the through-hole 11 are different surfaces.

[0068] In some embodiments, the substrate 10 defines a thermal expansion coefficient of 10 ppm / °C or less along the horizontal plane P10. It should be understood that the thermal expansion coefficient of the substrate 10 may also be the overall thermal expansion coefficient. The substrate 10 may be an inorganic substrate, for example, the substrate 10 may be a glass and / or ceramic material, for example, a glass substrate, a ceramic substrate, a glass ceramic substrate (Glass Ceramics), or a substrate containing glass material, containing ceramic material, or containing both. The substrate 10 may also be an organic substrate, for example, a polyimide (PI) substrate, a polyethylene terephthalate (PET) substrate, a polyethylene naphthalate (PEN) substrate, a liquid crystal polymer (LCP) substrate, a polydimethylsiloxane (PDMS) substrate, or a PI material, PET material, PEN material, LCP material, or PDMS material. The substrate 10 may be a rigid substrate or a flexible substrate, or may include a flexible substrate. The substrate 10 may be a single-layer substrate or a multilayer substrate. If the substrate 10 is a multilayer substrate, at least one layer may contain an organic material. In this specification, a clearer distinction between a single-layer substrate and a multilayer substrate is whether or not layers can be separated. A single-layer substrate is not limited to a substrate made of only one material; a single-layer substrate may be a composite substrate with a single-layer structure containing different materials, while a multilayer substrate is a multilayer substrate separated into layers of the same or different materials. In some embodiments, at least one layer of the multilayer substrate may contain a polyimide material or the organic substrate material described above. In some embodiments, the thickness of at least one layer of the multilayer substrate is 100 μm or less, or the thickness of each layer of the multilayer substrate is 100 μm or less. Also, in some embodiments, at least one layer or each layer of the multilayer substrate is defined to have a thermal expansion coefficient of 10 ppm / °C or less along the horizontal plane.

[0069] Please refer to Figures 1A and 1B. In some embodiments, the substrate 10 defines the plate thickness T10, and at least one through hole 11 defines the hole diameter R11. The ratio of the plate thickness T10 to the hole diameter R11, i.e., the aspect ratio of the through hole 11, is 1, 2, 3, 5, 10 or more, or 16 or more. Here, the hole diameter R11 of the through hole 11 is both the diameter of the through hole 11 and the maximum hole diameter, and the plate thickness T10 of the substrate 10 is the maximum plate thickness, but is not limited to this. In some embodiments, the hole diameter R11 is 100 μm or less, or 60 μm or less, and the plate thickness T10 is 500 μm or less, or 300 μm or less, but is not limited to this.

[0070] Figures 1C and 1D are plan views of the film layer structure 20 of the present invention. In some embodiments, the conductive structure 21 of the film layer structure 20 comprises a conductive surface 22 and other correlated structures, and the conductive structure 21 includes one or more conductive layers 211. If the conductive layer 211 is a single layer, it may be a patterned conductive layer 211a or an unpatterned conductive layer 211b. In one embodiment, the conductive layer 211 is a plurality of conductive layers, preferably a plurality of patterned conductive layers 211a, where at least two patterned conductive layers 211a are electrically connected. Furthermore, since these patterned conductive layers 211a are arranged and bonded by an insulating material 212, a structure such as a redistribution layer (RDL) can be formed, but is not limited thereto. In Figure 1C, the conductive structure 21 includes an area unit 22a of the conductive surface 22, and the area unit 22a is electrically connected to the conductive layer 211.

[0071] Refer to Figure 2A. The film layer structure 20A of the substrate structure 100A further includes an adhesive layer 23, which is positioned between the conductive structure 21 and the substrate 10 and bonds the conductive structure 21 to the substrate 10. In this embodiment, the surface S202 of the film layer structure 20A is the surface on which the adhesive layer 23 faces the substrate 10, and the conductive member 30 protrudes from the first surface S101 of the substrate 10, penetrates the adhesive layer 23, and is electrically connected to the conductive surface 22 of the film layer structure 20A. In this embodiment, the surface S202 of the film layer structure 20A and the conductive surface 22 are not the same surface.

[0072] In one embodiment, the method for arranging the conductive layer 211 on the substrate 10 includes technical means such as vacuum sputtering, vacuum evaporation, magnetron sputtering, electroplating, electroless plating, lamination or cladding, thermal compression, chemical vapor deposition (CVD), printing technologies, and ion beam assisted deposition (IBAD).

[0073] In the above technical means, an intermediate functional layer can be derived or generated by, for example, electroplating, electroless plating, sputtering, lamination, or thermocompression bonding. The intermediate functional layer includes, but is not limited to, a reaction layer or a diffusion layer, and corresponds to the adhesive layer 23. For example, if a conductive layer 211 is placed by a thermal lamination process, and the conductive layer 211 contains copper material and the substrate 10 is an organic substrate, such as a resin substrate, the intermediate functional layer may be the result of a reaction between the oxide of the copper material and the resin group, and mainly contains Cu-OC bonds. In another embodiment, if the organic substrate is a PI substrate, the intermediate functional layer may be the result of a reaction between an acetylimide ring and copper, and mainly contains Cu-OC and Cu-N bonds. In this case, the resistance value of the intermediate functional layer is between that of the conductor (conductive layer) and the insulator (substrate). Furthermore, if the substrate is an inorganic substrate, such as a glass or ceramic substrate, the inorganic substrate has relatively few functional groups, so the intermediate functional layer can be a Cu-O-Si or Cu-O-Al bond, and in this case, the resistance value of the intermediate functional layer is close to that of the insulator (substrate).

[0074] Please also refer to the substrate structure 100B in Figure 2B. First, a conductive structure 21 or conductive layer 211 is completed on the carrier plate 24. The carrier plate 24 may be a non-conductive substrate or a conductive substrate, and the conductive substrate may have an adhesive layer 23. After completing the conductive structure 21 or conductive layer 211 on the carrier plate 24, an adhesive material or adhesive layer 23 is placed on the side of the conductive structure 21 or conductive layer 211 opposite to the side facing the carrier plate 24. The adhesive material includes, but is not limited to, epoxy resin, acrylic resin, or polyimide. The adhesive material may be a non-layered adhesive material or an adhesive material without a specific form, and may be considered an enlarged form of the film layer structure 20B. After placing the adhesive material or adhesive layer 23, the film layer structure 20B is brought close to the substrate 10 by one side of the adhesive layer 23 and bonded, and then the carrier plate 24 is removed. In some cases, the carrier plate 24 may not be removed to facilitate subsequent application. Furthermore, an adhesive layer 23 can also be placed on the substrate 10 to bond it with the film layer structure 20B.

[0075] The materials of the conductive layer 211 described above include, but are not limited to, metallic elemental materials, alloys, compounds, conductive polymers, and composite materials. Metallic elemental materials include, but are not limited to, elemental materials such as copper (Cu), aluminum (Al), silver (Ag), gold (Au), nickel (Ni), tin (Sn), or graphene (Graphene). Conductive polymer materials include, but are not limited to, polyaniline (PANI) or polypyrrole (PPy). Composite materials include, but are not limited to, functional carbon nanotubes mixed with carbon nanotubes (CNTs) or other metal particles. Furthermore, the meaning of the unpatterned conductive layer described above is a conductive layer without a continuous design, and includes, but is not limited to, copper foil and copper plating layers (electroless plated copper layers, sputtered copper layers, and vapor-deposited copper layers). A patterned conductive layer is a designed conductive layer (e.g., an electrical circuit), and includes conductive layers with a reproducible design or conductive layers without a reproducible design. See also Figure 2C. The film layer structure 20C of the substrate structure 100B further includes a release layer 25, which is positioned between the carrier plate 24 and the conductive structure 21. By providing light irradiation or changing the temperature of the release layer 25, the carrier plate 24 can be easily removed from the conductive structure 21 in subsequent processes.

[0076] The conductive member 30 of the present invention is composed of the same material and has no interface; therefore, the conductive member 30 of the present invention is a single conductive material member. The manufacturing method of the conductive member 30 of the present invention is constructed by plating using the conductive surface of the film layer structure 20, for example, by electroplating. In this method, a conductive region on the conductive surface 22 of the film layer structure 20 is used as the cathode for the electroplating reaction, and conductive material is gradually deposited on the conductive surface of the film layer structure 20 according to the principle of electrochemistry. As a result, the conductive member 30 is formed in the accommodating space 12 of the corresponding through hole 11, and therefore the conductive member 30 can be considered as a member with deposited conductive material. Furthermore, the above-mentioned method for depositing the conductive material can include vacuum sputtering, vacuum deposition, magnetron sputtering, electroless plating, chemical vapor deposition, ion beam assisted deposition, etc. At least a portion of the conductive member 30 of the substrate structure of the present invention can come into contact with the inner surface 13 of the corresponding through hole 11 by a non-chemical bonding method. The term "chemical bond" here is not limited to bonds between metallic or nonmetallic materials, but broadly refers to interatomic attractive forces, including ionic bonds, covalent bonds, metallic bonds, hydrogen bonds, and van der Waals forces. Therefore, the non-chemical bond of this invention is a type that excludes at least the chemical bonds listed above. Although the conductive member 30 and the inner surface 13 of the corresponding through hole 11 are in contact in a non-chemical bonding manner, other types of interaction forces still exist between the conductive member 30 and the inner surface 13 of the through hole 11, such as mechanical contact forces, static friction forces, gravitational forces, and weak electrostatic attractive forces. Many of these interaction forces are reversible or separable. Since there is no chemical bond between the conductive member 30 and the inner surface 13 of the corresponding through hole 11, the conductive member 30 can move freely relative to the substrate 10 or adjust its position during thermal expansion and contraction in certain situations. For example, when the substrate structure is heated due to processing requirements, causing a change in volume between the substrate 10 and the conductive member 30, the conductive member 30 can freely adjust its position relative to the substrate 10.

[0077] The material of the conductive member 30 includes, but is not limited to, copper (Cu), aluminum (Al), silver (Ag), gold (Au), nickel (Ni), and tin (Sn).

[0078] In some embodiments, the outer surface of the conductive member 30 has a defined surface roughness of 0.6 μm or less, or 0.3 μm or less. The surface roughness value of the conductive member 30 has a corresponding signal frequency, and the IPC-4562A standard may be used as a reference, but is not limited to it. Furthermore, the above surface roughness is the average surface roughness or the maximum surface roughness of the conductive member 30. Methods for calculating surface roughness include, but are not limited to, root mean square roughness (Rrms or Rq), arithmetic mean roughness (Ra), peak count roughness (Rpc), mean spacing of profile irregularities roughness (Rs), and mean spacing of profile elements roughness (Rsm). Relatively low surface roughness can improve conductivity by reducing the transmission loss of high-frequency signals. Therefore, because the conductive member 30 has a low surface roughness, high-frequency signals can reduce transmission loss during transmission. Although signals can be transmitted through other transmission routes (e.g., the holes of through-holes), when the surface roughness of the circumferential surface of the conductive member 30 is low, high-frequency signals are transmitted naturally by passing through the circumferential surface of the conductive member 30, thus reducing signal attenuation.

[0079] In some embodiments, please refer to Figure 2A. The housing space 12 defines the housing volume Vr, and the conductive member 30 defines a portion of the housing space 12 of the corresponding through hole 11 as the filling volume Vo, where the filling volume Vo of the conductive member 30 is 90% or more of the housing volume Vr of the housing space 12.

[0080] In some embodiments, please refer to Figure 2D. The conductive member 30D of the substrate structure 100D is located in the through hole 11 and includes a conductive portion 31 that is electrically connected to the film layer structure 20D, and a conductive projection block 32 that is electrically connected to the conductive portion 31 and protrudes from the second surface S102 of the substrate 10. The conductive member 30D including the conductive projection block 32 may be an intermediate product of the manufacturing process or may be in the form of the final product. If the conductive member 30D including the conductive projection block 32 is an intermediate product of the manufacturing process, the conductive projection block 32 is removed by methods such as polishing or laser, but is not limited to these. This exposes the conductive portion 31.

[0081] Refer to Figure 3A. The substrate structure 100E further includes a second film layer structure 40 located on one side of the second surface S102 of the substrate 10, and the corresponding through holes 11 seal at least a portion of an opening O112 that is different from the opposite surface of the substrate 10, and furthermore, the second film layer structure 40 completely seals the corresponding through holes 11 of the opening O112 provided on the second surface S102 of the substrate 10. The second film layer structure 40 includes a conductive structure 41 having at least a conductive layer, and the conductive structure 41 is electrically connected to the corresponding conductive member 30. In the embodiment of Figure 3A, the film layer structure 20 is a film layer structure including a release layer 25, but is not limited thereto. Furthermore, please refer to Figure 3B. In the structure of substrate structure 100E in Figure 3A, if the carrier plate 24 and the release layer 25 are separated from the conductive structure 21 from the position of the release layer 25, substrate structure 100F is obtained, which has both a film layer structure 20 and a second film layer structure 40. Also, by further adding a second film layer structure to substrate structure 100C in Figure 2C, substrate structure 100G shown in Figure 3C can be obtained.

[0082] For some embodiments, please refer to Figure 3C. An insulating member 50 is further placed in the through hole 11, and the insulating member 50 includes at least an insulating material 51, which is placed between the hole wall 14 of the through hole 11 and the conductive member 30 and used as a buffer, but is not limited to this. When manufacturing the substrate structure 3C, the insulating member 50 is first placed in the through hole, and then the second film layer structure 40 is placed. For this embodiment, please refer to Figures 3C and 3D together. Since the insulating material 51 is placed continuously along the hole wall 14, the insulating material 51 defines the inner surface 13J of the through hole 11. Also, in the embodiment of Figure 3E, since the insulating material 51 is placed intermittently along the hole wall 14, in this embodiment the insulating material 51K and the hole wall 14 jointly define the inner surface 13K. Furthermore, different insulating materials 51 are arranged according to the requirements of different functions, and these requirements include, but are not limited to, buffering or barrier functions. In addition, the insulating material 51 has a buffering function and can prevent conductive members in adjacent through holes from interfering with each other.

[0083] For some embodiments, please refer to Figure 4A. The insulating member 50 of the substrate structure 100H includes an insulating material 51 and an insulating layer 52, and at least a portion of the insulating layer 52 is placed on the second surface S102 of the substrate 10. Different insulating layers 52 can be made of different materials depending on the requirements of different functions, and these requirements include, but are not limited to, buffer, protection, or barrier functions. Furthermore, as shown in Figure 4A, the insulating layer 52 may be a continuous unpatterned or patterned insulating layer, and since the through holes 11 are for sealing the openings O112 provided on the second surface S102 of the substrate 10, the substrate structure 100H of this embodiment can be a marketable product.

[0084] Furthermore, please refer to Figure 4B. The insulating layer 52 of the substrate structure 100I may be a continuous unpatterned or patterned insulating layer, and may also include a window portion O52 provided corresponding to the through hole 11, with the window portion O52 and the through hole 11 in communication. In this embodiment, the conductive structure 41 of the second film layer structure 40 includes at least one conductive layer 411, the conductive layer 411 has an extended portion 411e, and the extended portion 411e is electrically connected to the conductive member 30 in the through hole 11 via the window portion O52. In this embodiment, the conductive layer 411 and the extended portion 411e can be manufactured from the same material, and since the extended portion 411e is formed by deposition from the conductive member 30 by a manufacturing process such as electroless plating or electroplating, the conductive layer 411 and the extended portion 411e may be integrally molded, but are not limited thereto.

[0085] In the substrate structure 100J shown in Figure 4C, in some embodiments, the hole diameter RO52 of the window portion O52 is smaller than the hole diameter R11 of the through hole 11, so the insulating layer 52 can effectively protect the corner located at the opening O112 of the through hole 11 in the substrate 10. In this embodiment, since the hole diameter RO52 of the window portion O52 is smaller than the hole diameter R11 of the through hole 11, the window portion O52 covers the through hole 11 along the projection direction perpendicular to the substrate 10.

[0086] Furthermore, in the embodiment shown in Figure 4C, the opening O112 located in the through hole 11 of the substrate 10 has notches C101 and C102, but notches C101 and C102 do not necessarily exist at the same time. Notches C101 and C102 may be intentionally designed chamfered structures or structures that are inevitably generated by the manufacturing process. Notches C101 and C102 do not necessarily have to be located on the same side of the substrate 10. Moreover, since the insulating material 51 and insulating layer 52 can fill the notches C101 and C102, filling regions C51 and C52 are created.

[0087] Refer to Figures 5A and 5B. In some embodiments, the substrate structures 100K and 100K' further include an external conductive member 60(60'), which is located on the opposite side of the film layer structure 20 of the substrate 10 and is electrically connected to the corresponding conductive member 30. The external conductive member 60 in Figure 5A includes a conductive material 61, which includes, but is not limited to, a conductive sphere or a conductive projection block. The conductive material 61 is directly electrically connected to the corresponding conductive member 30 via a window O52 in the insulating layer 52. In the embodiment of Figure 5B, the external conductive member 60' includes the conductive material 61 and a gasket 62, which is provided between the conductive material 61 and the corresponding conductive member 30. The gasket 62 includes, but is not limited to, a thickened gasket or a thin metal layer (under-bump metallization). The gasket 62 is directly electrically connected to the conductive member 30 via the window portion O52 of the insulating layer 52, and the conductive material 61 is provided on the gasket 62 and is electrically connected to the gasket 62.

[0088] Furthermore, please refer to Figures 6A and 6B. In some embodiments, the film layer structure 20 of the substrate structure 100L, 100M includes at least a conductive structure 21, the conductive structure 21 comprising a plurality of patterned conductive layers 211, at least two patterned conductive layers 211 electrically connected to each other, and these patterned conductive layers 211 bonded together by an insulating material 212. In this embodiment, the film layer structure 20 further includes an adhesive layer 23 connecting the conductive structure 21 and the substrate 10. Here, the surface S202 of the film layer structure 20 is the surface on which the adhesive layer 23 faces the substrate 10. In this embodiment, the conductive surface 22 of the film layer structure 20 is the surface on which one patterned conductive layer 211 faces the substrate 10. The conductive surface 22 is a metal layer or a seed layer, and in this embodiment, the conductive surface 22 is a seed layer. The film layer structure 20 further includes an external connecting conductive member 26, which is electrically connected to the conductive structure 21 located on the opposite side from the substrate 10. In this embodiment, the external connection conductive member 26 is electrically connected to a single patterned conductive layer 211 that is separated from the substrate 10. The external connection conductive member 26 includes at least one conductive material 261, which includes, but is not limited to, conductive spheres or conductive projection blocks. The external connection conductive member 26 further includes a gasket 262, which is positioned between the conductive material 261 and the patterned conductive layer 211. The gasket 262 includes, but is not limited to, a thickened gasket, a thin-film metal layer UBM, or a surface finish layer. In Figure 6B, the substrate structure 100M includes a second film layer structure 40, which has a conductive structure 41, and the conductive structure 41 comprises at least one conductive layer 411, which is electrically connected to the corresponding conductive member 30. In this embodiment, the conductive structure 41 includes a plurality of conductive layers 411, the plurality of conductive layers being patterned conductive layers, at least two patterned conductive layers 411 being electrically connected to each other, and these patterned conductive layers 411 being bonded together by an insulating material 412. In this embodiment, the second film layer structure 40 further includes an external connecting conductive member 42, the external connecting conductive member 42 being electrically connected to the conductive structure 41 located on the opposite side from the substrate 10, for example, the conductive structure 41 being electrically connected to a single patterned conductive layer 411 away from the substrate 10.The external connection conductive member 42 includes a conductive material 421, which includes, but is not limited to, conductive spheres or conductive projection blocks. The external connection conductive member 42 further includes a gasket 422, which is positioned between the conductive material 421 and the patterned conductive layer 411, and which includes, but is not limited to, a thickened gasket, a thin metal layer UBM, or a surface treatment layer.

[0089] By combining the above embodiments, various substrate structures can be obtained, which can then be made into marketable products.

[0090] Furthermore, the above-mentioned substrate structure or film layer structure includes optical path design, enabling the transmission of optical signals, or the simultaneous transmission of electrical and optical signals.

[0091] Figures 7A, 7B, and 7C disclose electronic devices ED1, ED2, and ED3, which include, but are not limited to, electronic modules, chiplets, and chip-on-wafer-on-substrate (CoWoS) packaging technology. Electronic devices 100 (100A, 100B) utilize the substrate structure of the present invention and are adapted to different applications by external conductive members. This embodiment has a plurality of electronic components 70, 71, and 72 which are electrically connected to a plurality of external conductive members 42 of the second film layer structure 40. These electronic components 70 are electronic components with the same or different functions / properties, such as integrated circuits, memory, high-bandwidth memory, intelligent power devices, sensor components, or light-emitting diodes (LEDs), and they are applicable to technical fields such as system integration, supercomputers and AI servers, RF modules, micro electro-mechanical systems, co-packaged optics (CPO), power management, and IoT devices. The embodiments in Figures 7A, 7B, and 7C show that electronic devices ED1, ED2, and ED3 are electronic components with different functions, and the film layer structure of the substrate structure includes multiple conductive layers and multiple external connection conductive members. In electronic device ED1 in Figure 7A, electronic component 72A is located between two other adjacent electronic components 71A. In the electronic device ED2 in Figure 7B, electronic component 72B is located between another electronic component 71B and the substrate structure 7B, and the different electronic components 71B and 72B in Figure 7B can be directly electrically connected to the substrate structure 7B. In the electronic device ED3 in Figure 7C, electronic component 72C is located between another electronic component 71C and the substrate structure 7C, and unlike the electronic device ED2 in Figure 7B, electronic component 72C in electronic device ED3 is directly electrically connected to electronic component 71C, and electronic component 71C is further directly electrically connected to the substrate structure 7C, meaning that electronic component 72C is indirectly electrically connected to the substrate structure 7C via electronic component 71C.Furthermore, electronic components 72B and 72C, which are positioned between the pin arrangements of electronic components 71B and 71C, include, but are not limited to, intelligent power devices or sensor components. The sensor components may also include light-emitting diodes. If the electronic components 71B and 72B have optical communication capabilities, the substrate structure of the present invention can further design corresponding optical communication routes, for example, by arranging optical conductors or optical through-holes in the substrate or its film layer structure.

[0092] The following are some manufacturing methods related to the substrate structure of the present invention, which are merely examples and do not limit the implementation of other manufacturing processes or the incorporation of other steps into these manufacturing processes.

[0093] The manufacturing method of the present invention comprises at least two steps. Step 1 first provides a substrate assembly comprising a substrate having through holes and a film layer structure, wherein at least a portion of the film layer structure can cover the through holes in the substrate. In this step, the substrate is not limited to being drilled first and then bonded to the film layer structure, or being bonded to the film layer structure first and then drilled. Step 2 deposits a conductive material into the corresponding through holes to form a conductive member. Other derivative manufacturing steps can be further performed before, during, or after Step 2. The manufactured substrate structure has already been described in each of the above embodiments.

[0094] Please refer to Figures 8A to 8F. This is one method for manufacturing the substrate structure of the present invention. Figure 8A shows the manufacturing of the substrate assembly A1T of Figure 8B, which includes a substrate 10, the substrate 10 includes a plurality of through holes 11, the through holes 11 have hole walls 14 defined, the hole walls 14 at this stage are the inner surfaces 13 of the through holes 11, and the inner surfaces 13 define the housing space 12. Because the substrate 10 is close to the film layer structure 20, the film layer structure 20 covers at least a portion of the opening O111 at one end of the through holes 11 of the substrate 10. The film layer structure 20 in this embodiment includes a conductive structure 21, an adhesive layer 23 connected to the conductive structure 21 and facing the substrate 10, a carrier plate 24 located on the opposite side of the conductive structure 21, and a release layer 25 connected to the conductive structure 21 and the carrier plate 24, but these do not limit the embodiments of the present invention. The film layer structure 20 defines two opposing surfaces S202 and S201, with surface S202 of the film layer structure 20 facing the substrate 10. At this time, surface S202 of the film layer structure 20 is exposed in the through hole 11. Refer to Figure 8B. After the substrate assembly A1T is installed, the through hole 11 is cleaned using laser or plasma technology, and the adhesive layer 23 exposed by the opening O111 of the through hole 11 is removed, thereby exposing the conductive structure 21 in the opening O111 of the through hole 11, and further exposing at least a portion of the conductive surface 22. Figure 8B shows the results using laser technology, but is not limited to this. Furthermore, refer to Figure 8C. Using electroplating technology, the conductive surface 22 of the film layer structure 20 is used as the cathode for the electroplating reaction, and the electroplating electrode is used as the anode for the electroplating reaction, and the conductive material is gradually deposited on the conductive surface 22 by electrochemical principles. The conductive material is gradually deposited from the bottom of the through hole 11, away from the hole wall 14, to form a conductive member 30, thereby obtaining a substrate structure 1T having the conductive member 30. At this stage, the conductive member 30 includes at least one conductive portion 31 and a conductive projection block 32 extending from the conductive portion 31 and protruding from the substrate 10. However, in some embodiments, as shown in Figure 8D, the substrate structure 1T at this stage does not have a conductive projection block 32.Since the conductive member 30 is formed by depositing from the bottom of the through hole 11 and is deposited along the vertical direction Z of the substrate 10, and not along the second direction Y parallel to the substrate 10 from the hole wall 14 of the through hole 11, when the conductive member 30 comes into contact with the through hole 11, particularly the inner surface of the through hole 11, such contact is a non-chemical bonding method, and these contact methods are reversible, allowing the conductive member 30 and the inner surface 13 of the through hole 11 to be easily separated, for example, peeled off, removed, or detached from the inner surface 13 of the through hole 11. Therefore, stress generated during the thermal expansion and contraction of the conductive member 30 is not transmitted to the inner surface 13 of the through hole 11, thereby reducing or avoiding potential risks such as deformation, cracking, breakage, warping, or material fatigue of the substrate 10. Refer to Figure 8D. Further polishing and / or polishing, or a manufacturing process having the same effect, removes the conductive protrusion block 32, and the opening O112 side of the conductive member 30 is flush with the second surface S102 of the substrate 10. In Figure 8E, the second film layer structure 40 is provided on the second surface S102 of the substrate 10 of the substrate structure 1T to cover at least a portion of another opening O112 of the through hole 11. The second film layer structure 40 includes a conductive structure 41, which includes a conductive layer 411, and the conductive layer 411 is completed by technical means such as vacuum sputtering, vacuum deposition, magnetron sputtering, electroplating, electroless plating, chemical vapor deposition, printing technology, or ion beam assisted deposition. The conductive layer 411 may be a patterned conductive layer or an unpatterned conductive layer, and the conductive layer 411 may have a signal transmission function, or it may serve as a seed layer on which other conductive layers having signal transmission functions are formed. In Figure 8F, by applying light irradiation or temperature changes to the release layer 25 of the film layer structure 20 of the substrate structure 1T, the conductive member 21 of the film layer structure 20 and the release layer 25 are separated, and the release layer 25 and the carrier plate 24 are further removed.

[0095] The substrate assembly A1T shown in Figure 8B can be manufactured by the method shown in Figures 9A and 9B. As shown in Figure 9A, the substrate assembly A1T' is obtained by first bonding an undefined substrate 10' with a film layer structure 20. Undefined means that at least no through holes 11 are provided. In this embodiment, the film layer structure 20 includes at least a conductive structure 21, the conductive structure 21 includes a conductive layer 211, and the film layer structure 20 further includes an adhesive layer 23, a carrier plate 24, and a release layer 25, but is not limited to these. After bonding the substrate 10 and the film layer structure 20, a drilling process is performed on the substrate 10' to form multiple through holes 11 in the substrate 10'. The drilling process may be laser drilling as shown in Figure 9B, and since another opening O111 of the through hole 11 remains in the conductive structure 21 (conductive layer 211), the conductive surface 22 is exposed. Furthermore, the above drilling process is carried out by first performing laser modification on the substrate 10' and then combining it with an etching process to form through holes in the substrate 10'. In some embodiments, the adhesive layer 23 is first provided on the substrate 10' and then combined with the laminated structure of conductive structure 21-release layer 25-carrier plate 24 to obtain the substrate assembly A1T' shown in Figure 9A. After forming the through holes 11 in the substrate 10', conductive material is deposited in the through holes by the above electroplating step to form conductive members 30, as shown in Figures 9C and 9D. Furthermore, as shown in Figures 9E and 9F, the substrate assembly A1T has a second film layer structure 40 placed on the opposite side of the film layer structure 20, and the release layer 25 and carrier plate 24 of the film layer structure 20 are removed to obtain the substrate structure 1T.

[0096] See also Figure 10A. In another method for manufacturing the substrate structure of the present invention, a conductive layer 211 is formed on a previously undefined substrate 10'' by technical means such as lamination or thermocompression bonding of metal foil, sputtering of a metal seed layer, or electroplating of a metal layer to obtain a substrate assembly A1T''. Compared with the substrate assembly A1T' in Figure 9A, the substrate assembly A1T'' does not have an adhesive layer, a release layer 25, or a carrier plate 24. Its film layer structure 20'' has only a conductive structure 21, a conductive layer 211 of the conductive structure, and a conductive surface 22. Subsequently, as shown in Figure 10B, through holes 11 are made in the substrate 10' of the substrate assembly A1T''. The conductive layer 211 in the conductive structure 21 of this embodiment is a patterned conductive layer or an unpatterned conductive layer. The conductive layer 211 of this embodiment may also be a multi-layer conductive layer 211, and such embodiments are shown in Figure 6A, but are not limited thereto. As shown in Figures 10C and 10D, the electroplating step described above allows for the deposition of conductive material in the through-hole 11 to manufacture the conductive member 30, and subsequent steps such as arranging the second film layer structure 40 can be performed, but the method is not limited to this.

[0097] Refer to Figure 11A to improve the ease and efficiency of electroplating. The projection direction Z of the substrate 10' and the film layer structure 20X perpendicular to the substrate 10' do not coincide. The conductive layer 211 of the conductive structure 21 of the film layer structure 20X, in particular, protrudes from the substrate 10' along the direction X of the horizontal plane P10 of the substrate 10', so that some of the conductive layer 211 of the conductive structure 21 is not covered by the substrate 10', exposing the conductive portion 21X. The conductive portion 21X may also be part of the conductive surface 22, and the relative relationship at this position can improve the efficiency of power supply to the conductive layer 211 of the conductive structure 21. In another embodiment, as shown in Figure 11B, the carrier plate 24 of the film layer structure 20X' is located inward from the substrate 10' along the direction X of the horizontal plane P10 parallel to the substrate 10'. Therefore, the projection of the conductive layer 211 of the conductive structure 21 in the direction Z perpendicular to the horizontal plane P10 of the substrate 10' is inward from the projection of the substrate 10' perpendicular to the horizontal plane P10, and the conductive portion 21X' of the conductive layer 211 is made to be exposed outward.

[0098] Referring to Figure 12A, after manufacturing the through-hole 11 in the substrate assembly A1T of Figure 8B, and before depositing the conductive material, an insulating member 50 is placed on the hole wall 14 of the through-hole 11, for example, an insulating material 51. The insulating material 51 may be a buffer layer formed on the hole wall 14, or it may be a metal oxide layer or a barrier layer. Alternatively, an inner through-hole is provided after filling the through-hole 11 with insulating material. Furthermore, the conductive material is deposited in the through-hole 11 (or inner through-hole) to obtain the substrate structure of Figure 12A. The substrate structure 12A of Figure 12A can further have a second film layer structure 40 placed on it, as shown in Figure 12B. Furthermore, the release layer 25 and the carrier plate 24 can be removed, as shown in Figure 12C. In another embodiment, referring to Figure 13A, in the substrate structure 12A of Figure 12A, an additional insulating layer 52 is placed on the opposite side of the substrate 10 from the film layer structure 20, and at least a portion of the insulating layer 52 covers the second surface S102 of the substrate 10. The effect of the insulating layer 52 is as described above. The insulating layer 52 is either a continuous, unpatterned insulating layer or a patterned insulating layer and can cover another opening O112 of the through hole 11. Furthermore, the insulating layer 52 corresponds to the through hole 11 of the substrate 10, a window portion O52 is placed, and the second film layer structure 40 is placed on the insulating layer 52. As shown in Figure 13B, refer to the description of the substrate structure in Figure 4B. Finally, as shown in Figure 13C, the release layer 25 and carrier plate 24 of the film layer structure 20 of the substrate structure are removed.

[0099] In summary, each embodiment of the present invention has already been described in the specification for illustrative purposes, and any modifications can be made without departing from the scope and spirit of the invention; therefore, the embodiments of the present invention do not limit the true scope and spirit of the invention.

[0100] The foregoing is illustrative and not limiting. Any modifications or changes made thereto, as long as they do not deviate from the spirit and scope of the invention, should fall within the scope of the claims of the invention. [Explanation of symbols]

[0101] 100, 100A, 100B, 100C, 100D, 100E, 100F, 100G, 100H, 100I, 100J, 100K, 100K', 100L, 100M, 12A, 1T, 3A, 3B, 3C, 6A, 6B, 7A, 7B, 7C Board structure 10, 10', 10'' substrate 11 Through hole 12 Containment space 13, 13J, 13K inner surface 14 Hole wall 20, 20'', 20A, 20B, 20C, 20D, 20X, 20X' membrane layer structure 21, 41 Conductive structure 211, 411 conductive layer 211a Patterned conductive layer 211b Non-patterned conductive layer 21X, 21X' conductive part 212, 412, 51, 51K insulating material 22 Conductive surface 22a Area Unit 23 Adhesive layer 24 Carrier board 25 Release layer 26, 42, 60, 60' External connection conductive members 261, 421, 61 Conductive materials 262, 422, 62 gasket 30, 30D conductive material 31 Conductive part 32 Conductive protrusion block 40 Second membrane layer structure 411e Extension section 50 Insulating material 52 Insulating layer 70, 71, 72, 71A, 71B, 71C, 72A, 72B, 72C Electronic Components 100, 100A, 100B, ED1, ED2, ED3 Electronic equipment A1T, A1T', A1T'' PCB Assembly C51, C52 filling area C101, C102 missing parts O52 Window section O111, O112 opening P10 horizontal plane R11, RO52 pore diameter S101 1st surface S102 2nd surface S201, S202 surface T10 plate thickness vo filling volume Vr storage volume X, Y, Z directions

Claims

1. A substrate having a first surface, a second surface facing the first surface, and a plurality of through holes, A film layer structure is disposed on either the first surface or the second surface of the substrate and covers at least a portion of the openings of the corresponding plurality of through holes, The device comprises a plurality of conductive members, each arranged within the accommodating space of a plurality of through-holes, with at least a portion of each conductive member in contact with the inner surface of the corresponding through-hole and electrically connected to the conductive surface of the film layer structure, Each of the through holes has a accommodating space, an inner surface defining the accommodating space, and two openings arranged on the first surface and the second surface, respectively. The aforementioned film layer structure defines a conductive surface with respect to the surface facing the corresponding opening, and at least a portion of the conductive surface corresponding to the opening is conductive. A substrate structure characterized in that at least one of the conductive members has a cross-section showing a continuous single medium along the direction of the horizontal plane of the substrate.

2. The substrate structure according to claim 1, characterized in that the substrate is a glass material, a ceramic material, or a glass-ceramic material.

3. The substrate structure according to claim 1, characterized in that the substrate is a multilayer substrate, at least one layer of the multilayer substrate contains an organic material, and the thickness of the layer containing the organic material is 100 μm or less.

4. The substrate structure according to claim 1, characterized in that the substrate has a coefficient of thermal expansion (CTE) defined along the horizontal plane, and the coefficient of thermal expansion is 10 ppm / °C or less.

5. The substrate structure according to claim 1, characterized in that the through-hole defines the hole diameter, the substrate defines the thickness of the substrate, and the ratio of the thickness of the substrate to the hole diameter is 1 or more.

6. The substrate structure according to claim 1, characterized in that the aforementioned film layer structure includes a conductive structure.

7. The substrate structure according to claim 6, wherein the film layer structure further includes an adhesive layer, and the adhesive layer bonds the conductive structure to the substrate.

8. The substrate structure according to claim 1, characterized in that the conductive member is in contact with at least a portion of the inner surface of the corresponding through hole by a method other than chemical bonding.

9. The substrate structure according to claim 1, characterized in that the conductive member is a member of a single conductive material.

10. The substrate structure according to claim 1, characterized in that the aforementioned storage space defines a storage volume, a member volume is defined for each of the conductive members, and the member volume is 90% or more of the storage volume of the through hole corresponding to the conductive member.

11. A substrate structure according to any one of claims 1 to 10, An external connecting conductive member connected to the film layer structure of the substrate structure, The electronic component comprises the external conductive member and the electronic component electrically connected to it. The electronic device is characterized in that the film layer structure is disposed between the externally connected conductive member and a plurality of the conductive members, and is electrically connected to the plurality of the conductive members.

12. The electronic device according to claim 11, characterized in that the electronic component is located between another electronic component and the substrate structure.

13. The electronic device according to claim 11, characterized in that the aforementioned electronic component is located between two other adjacent aforementioned electronic components.

14. The electronic device according to claim 11, characterized in that the electronic component is an integrated passive component (IPD) or a light-emitting diode (LED).

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