Flip-chip type light-emitting diode and method for manufacturing the same
The flip-chip light-emitting diode structure with a titanium dioxide and silicon dioxide wafer bonding layer improves light extraction efficiency and simplifies manufacturing, addressing high costs and enhancing market competitiveness.
JP2026109545APending Publication Date: 2026-07-01TAIWAN ASIA SEMICONDUCTOR CORPORATION
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- TAIWAN ASIA SEMICONDUCTOR CORPORATION
- Filing Date
- 2025-10-24
- Publication Date
- 2026-07-01
AI Technical Summary
Technical Problem
Flip-chip light-emitting diodes have higher manufacturing process and equipment costs, which impairs their economic benefits and market competitiveness despite their advantages in heat dissipation and light extraction efficiency.
Method used
A flip-chip light-emitting diode structure comprising a transparent substrate, epitaxial composite layer, conductivity type electrode pads, and a wafer bonding composite layer with titanium dioxide and silicon dioxide layers, optimized for improved light extraction efficiency and simplified manufacturing.
Benefits of technology
Enhances light extraction efficiency and reduces development costs, improving the brightness and market competitiveness of flip-chip light-emitting diodes.
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Smart Images
Figure 2026109545000001_ABST
Abstract
This invention provides a flip-chip type light-emitting diode and a method for manufacturing the same that improve light extraction efficiency and simplify the manufacturing process. [Solution] The flip-chip light-emitting diode includes a transparent substrate 208, an epitaxial composite layer, a first conductivity type electrode pad 211, a second conductivity type electrode pad 212, and a wafer bonding composite layer. The epitaxial composite layer is mounted on the transparent substrate and includes a first compound semiconductor layer 204, a light-emitting layer 203, and a second compound semiconductor layer 202. The first conductivity type electrode pad is mounted on the transparent substrate and electrically connected to the epitaxial composite layer. The second conductivity type electrode pad is mounted on the epitaxial composite layer, electrically connected to the epitaxial composite layer, and is located on the same side of the transparent substrate at the same height as the first conductivity type electrode pad. The wafer bonding composite layer includes at least one titanium dioxide (TiO2) layer 206 and at least one silicon dioxide (SiO2) layer 207.
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