Glass core through-glass vias with a shape designed to reduce cracking due to stress.

Abstract

The present invention provides a device equipped with glass vias that penetrate a glass core and have a shape that reduces cracking due to stress. [Solution] Embodiments disclosed herein relate to an apparatus including a substrate having a first surface and a second surface opposite to the first surface. In the embodiment, the substrate has a glass layer and vias are provided through the substrate. In the embodiment, the via has a first portion having a first sidewall oriented at a first angle with respect to the first surface of the substrate, the first portion of the via is on the first surface of the substrate. In the embodiment, the second portion of the via includes a second sidewall oriented at a second angle with respect to the first surface of the substrate, the first angle being different from the second angle.

Description

Background Art

[0001] Glass cores for package substrates are an attractive option because they offer improved rigidity, flatness, and wiring density compared to existing organic cores. However, glass has a brittle nature, which causes several issues in manufacturing. One problem with glass cores is the high stress generated by vias formed through the glass core (i.e., through glass vias (TGVs)). In conventional plating, a seed layer is provided along the sidewalls of the via opening, and the via is formed by plating from the sidewalls. The difference in the coefficients of thermal expansion (CTE) between the glass core and the via can induce large stresses in the glass core. In many cases, the stress is ultimately dissipated by cracking of the glass core. Cracking of the glass core raises serious concerns about reliability and reduces the yield during the manufacture of package substrates.

Brief Description of the Drawings

[0002] [Figure 1] A cross-sectional view of a glass core with through glass vias (TGVs) penetrating the thickness of the glass core, according to an embodiment. [Figure 2A] A cross-sectional view of a glass core with a TGV having a gobblet-shaped cross-section, according to an embodiment. [Figure 2B] An enlarged cross-sectional view of a portion of a TGV within a glass core representing the upper portion of the TGV, according to an embodiment. [Figure 2C] An enlarged cross-sectional view of a portion of a TGV within a glass core representing the upper portion of the TGV, according to an embodiment. [Figure 2D] An enlarged cross-sectional view of a portion of a TGV within a glass core representing the upper portion of the TGV, according to an embodiment. [Figure 2E] A cross-sectional view of a glass core with a TGV having a liner between the TGV and the glass core, according to an embodiment. [Figure 2F]This is a cross-sectional view of a glass core equipped with a TGV having a goblet-shaped cross-section at one end of the TGV, according to an embodiment. [Figure 3A] This is a cross-sectional view showing the process of forming a TGV having a goblet-shaped cross-section in a glass core according to the embodiment. [Figure 3B] This is a cross-sectional view showing the process of forming a TGV having a goblet-shaped cross-section in a glass core according to the embodiment. [Figure 3C] This is a cross-sectional view showing the process of forming a TGV having a goblet-shaped cross-section in a glass core according to the embodiment. [Figure 3D] This is a cross-sectional view showing the process of forming a TGV having a goblet-shaped cross-section in a glass core according to the embodiment. [Figure 3E] This is a cross-sectional view showing the process of forming a TGV having a goblet-shaped cross-section in a glass core according to the embodiment. [Figure 3F] This is a cross-sectional view showing the process of forming a TGV having a goblet-shaped cross-section in a glass core according to the embodiment. [Figure 4] This is a flowchart of the process for forming TGV in a glass core according to the embodiment. [Figure 5] This is a cross-sectional view of an electronic system having a package substrate with a glass core including a TGV having a goblet-shaped cross-section, according to an embodiment. [Figure 6] This is a schematic diagram of a computing device configured according to an embodiment. [Modes for carrying out the invention]

[0003] This specification describes glass substrates equipped with glass through-vias (TGVs) having a goblet-shaped cross-section, according to various embodiments. In the following description, various aspects of the embodiments are described using terminology commonly used by those skilled in the art, so as to convey the essence of their research to others skilled in the art. However, as will be obvious to those skilled in the art, this disclosure may be carried out by only some of the aspects described. For illustrative purposes, specific numbers, materials and configurations are given so as to provide a full understanding of the embodiments. However, as will be obvious to those skilled in the art, this disclosure may be carried out without specific details. In other instances, well-known features are omitted or simplified so as not to obscure the embodiments.

[0004] While various aspects are described as multiple separate actions, that is, in the manner most helpful in understanding this disclosure, the order in which they are described should not be interpreted as indicating that these actions necessarily depend on the order in which they are presented. In particular, these actions do not need to be performed in the order in which they are presented.

[0005] Various embodiments or aspects of the present disclosure are described in the specification. In some implementations, different embodiments are implemented separately. However, embodiments are not limited to those that are implemented separately. For example, two or more different embodiments may be combined to be implemented as a single device, process, structure, etc. In some cases, the whole of various embodiments may be combined. In other cases, a part of the first embodiment may be combined with a part of one or more different embodiments. For example, a part of the first embodiment may be combined with a part of the second embodiment, or a part of the first embodiment may be combined with a part of the second and third embodiments.

[0006] As mentioned above, existing glass cores offer improved rigidity, flatness, and wiring density compared to organic cores. However, differences in the coefficients of thermal expansion (CTE) between the metal material of vias (e.g., through-glass vias (TGVs)) and the glass substrate can cause stress in the glass core during plating and / or thermal cycling. In particular, the stress between the metal material of the TGV and the glass core can cause cracking in the glass core at the "shoulder" where the sidewall of the TGV transitions from a non-vertical inlet angle to a vertical angle.

[0007] For example, Figure 1 is a cross-sectional view of such a TGV120 in a glass core 110. As shown, the TGV120 penetrates the glass core 110 from a first surface 111 to a second surface 112 opposite the first surface 111. The shoulder 113 may be a weak point where the side wall 121 of the TGV120 meets the upper surface 111 of the glass core 110 at a steep angle. Due to stress concentration at this point during plating and / or thermal cycling, cracking at the shoulder 113 can frequently occur. This can reduce the yield of the manufacturing process and lead to reliability issues throughout the lifespan of the package substrate manufactured on the glass core 110.

[0008] Accordingly, embodiments disclosed herein may include the manufacture of a TGV having a recessed shoulder. By moving the stress-concentrated joint to a deeper portion of the glass core, the glass core can withstand higher stresses. Thus, the glass core is less likely to break or crack during plating and / or thermal cycling. This can increase yield and improve reliability. In embodiments, the resulting TGV may be said herein to have a goblet-shaped cross-section. That is, the top and / or bottom portions of the TGV may be wider than the width of the middle portion of the TGV. Furthermore, the side walls of the wider portion and the side walls of the narrower middle portion may, in some embodiments, have different inclinations with respect to the front or bottom surface of the glass core. In other words, a TGV with a goblet-shaped cross-section may have a stem portion (i.e., a middle portion) and a cup portion (i.e., an upper (and / or lower) portion).

[0009] A goblet-shaped cross section can be manufactured by a dual laser process. In embodiments, a first laser process is used to penetrate the glass core and form a narrow channel. The first laser process may also result in the formation of a heat-affected zone along the edge of the narrow channel. Subsequently, a second laser process is used to remove a portion of the glass core to form recesses on the top and / or bottom surfaces of the glass core. These recesses have a width wider than the width of the narrow channel. The second laser process may use a different type of laser than the first laser process. For example, the first laser process may use a Bessel laser, and the second laser process may use a femtosecond laser or an excimer laser. After the recesses are formed, an etching process may be used to enlarge the opening to the desired size of the TGV. Then, a plating process may be used to plate the TGV within the opening. In some embodiments, a liner (e.g., a buffer layer) may also be provided between the TGV and the glass core.

[0010] Referring now to Figure 2A, a cross-sectional view of a glass core 210 with a TGV 220 is shown according to an embodiment. In the embodiment, the glass core 210 may include a top surface 211 and a bottom surface 212 opposite to the top surface 211. As shown, the TGV 220 may have a goblet-shaped cross-section. For example, a first portion 226 near the top surface 211 is wider than a second portion 227 to form a goblet shape. Similarly, a third portion 228 near the bottom surface 212 is wider than the second portion 227.

[0011] As indicated by the dashed circle, the corner region 224 is recessed within the depth of the glass core 210. Recessing the corner region 224 allows stress to be induced within the stronger portion of the glass core 210, in contrast to the exposed upper surface 211 (as shown in Figure 1). This improves the manufacturing yield and reliability of the glass core 210.

[0012] In embodiments, via openings in the TGV220 that penetrate the thickness of the glass core 210 can be formed by any suitable process. For example, a laser-assisted etching process may be used to form via openings in some embodiments. In particular, a first laser process and a second laser process may be used, as described in more detail herein. In embodiments, the TGV220 may be a high-aspect-ratio TGV220. For example, the aspect ratio (height:diameter) of the TGV220 may be 5:1 or greater, 10:1 or greater, or 20:1 or greater. The embodiments may also be used for TGV220s with smaller aspect ratios.

[0013] In embodiments, the glass core 210 may be substantially entirely glass. The glass core 210 may be a solid mass containing a glass material having an amorphous crystalline structure, and the solid glass core may also include various structures filled with one or more other materials (e.g., metals, metal alloys, dielectric materials, etc.), such as vias, cavities, channels, or other features. Thus, the glass core 210 can be distinguished from, for example, the “prepreg” or “FR4” core of a printed circuit board (PCB) substrate, which typically contains glass fibers embedded in a resin-organic material such as epoxy.

[0014] The glass core 210 may have any suitable dimensions. In certain embodiments, the glass core 210 may have a thickness of about 50 μm or more. For example, the thickness of the glass core 210 may be between about 50 μm and about 1.4 mm. Smaller or larger thicknesses may also be used. The glass core 210 may have edge dimensions (e.g., length, width, etc.) of about 10 mm or more. For example, the edge dimensions may be between about 10 mm and about 600 mm. Larger or smaller edge dimensions may also be used. More generally, the area dimensions of the glass core 210 (from the top view) may be between about 10 mm × 10 mm and about 600 mm × 600 mm. In embodiments, the glass core 210 may have a first side that is perpendicular or right to the second side. In more general embodiments, the glass core 210 may have a rectangular prism volume in which sections (e.g., vias) have been removed and other materials (e.g., metal, etc.) have been filled.

[0015] The glass core 210 may have a single monolithic layer of glass. In other embodiments, the glass core 210 may have two or more individual glass layers stacked on top of each other. The individual glass layers may be in direct contact with each other, or they may be mechanically bonded to each other by an adhesive or the like. Each individual glass layer in the glass core 210 may have a thickness of less than about 50 μm. For example, the individual glass layers in the glass core 210 may have a thickness between about 25 μm and about 50 μm. In some embodiments, the individual glass layers may have greater or lesser thicknesses. As used herein, "about" can mean a range of values ​​within 10% of the stated value. For example, 50 μm can mean a range between 45 μm and 55 μm.

[0016] The glass core 210 may be any suitable glass compound having the required mechanical robustness and compatibility with the semiconductor package manufacturing and assembly processes. For example, the glass core 210 may include aluminosilicate glass, borosilicate glass, aluminoborosilicate glass, silica, fused silica, etc. In some embodiments, the glass core 210 may contain one or more additives, but not limited to Al2O3, B2O3, MgO, CaO, SrO, BaO, SnO2, Na2O, K2O, SrO, P2O3, ZrO2, Li2O, Ti, or Zn. More generally, in addition to silicon and oxygen, the glass core 210 may contain one or more of the following: aluminum, boron, magnesium, calcium, barium, tin, sodium, potassium, strontium, phosphorus, zirconium, lithium, titanium, or zinc. In some embodiments, the glass core 210 may contain at least 23% silicon (by weight) and at least 26% oxygen (by weight). In some embodiments, the glass core 210 may further contain at least 5% aluminum (by weight).

[0017] Of course, the specific shape of the cross-section of the TGV can be variable depending on the particular processing field used to form the openings through the glass core. Some different examples of several cross-sectional shapes of the TGV are shown in connection with FIGS. 2B-2D.

[0018] Referring now to FIG. 2B, a cross-sectional view of a portion of the TGV 220 (i.e., the upper side of the TGV 220) is shown in accordance with an embodiment. The TGV 220 is substantially a monolithic structure, although the TGV may be described as having different parts. For example, the first part 226 may be at the upper part of the TGV 220 adjacent to the upper surface 211 of the glass core 210. The second part 227 may be below the first part 226, and the intermediate part 229 may be between the first part 226 and the second part 227.

[0019] In an embodiment, the first part 226 may have a first sidewall 221. The first sidewall 221 may be directed towards the upper surface 211 at a first angle θ1 away from the normal (dashed line) of the upper surface 211. The first angle θ1 may be within 15° of the normal, within 25° of the normal, or within 45° of the normal. In an embodiment, the second part 227 may have a second sidewall 222. The second sidewall 222 may be directed towards the upper surface 211 at a second angle θ2 away from the normal (dashed line) of the upper surface 211. The second angle θ2 may be different from the first angle θ1. In an embodiment, the first sidewall 221 may extend to a depth D of the substrate that is at least 10 μm.

[0020] In an embodiment, the width of the first part 226 may be different from the width of the second part 227. More specifically, the minimum width W1 of the first part 226 may be wider than the maximum width W2 of the second part 227. That is, the first part 226 and the second part 227 may have a non-uniform width over their thicknesses. In an embodiment, the third sidewall 223 of the intermediate part 229 may connect the first sidewall 221 to the second sidewall 222 so as to provide a continuous edge to the TGV 220.

[0021] Referring now to Figure 2C, a partial cross-sectional view of the TGV220 in the glass core 210 is shown according to a further embodiment. The TGV220 in Figure 2C is similar to the TGV220 in Figure 2B, except for the inclination of the first side wall 221 and the third side wall 223. For example, the first side wall 221 is substantially perpendicular to the top surface 211 of the glass core 210. The second side wall 222 may still have a different angle θ2 with respect to the top surface 211 than the angle of the first side wall 221.

[0022] As shown in Figure 2C, a first corner 218 may be provided at the junction between the first sidewall 221 and the third sidewall 223, and a second corner 219 may be provided at the junction between the third sidewall 223 and the second sidewall 222. In embodiments, the first corner 218 can define a blunt third angle θ3 between the first sidewall 221 and the third sidewall 223, and the second corner 219 can define a curved fourth angle θ4 between the third sidewall 223 and the second sidewall 222. In embodiments, the first corner 218 and the second corner 219 may be rounded. The rounded shape of the corners may be the result of an etching process (e.g., a wet etching process) used to define the opening through the glass core 210 in which the TGV 220 is formed. In embodiments, the width W1 of the first portion 226 is wider than the maximum width W2 of the second portion 227.

[0023] Referring now to Figure 2D, a cross-sectional view of a portion of the TGV220 in the glass core 210 is shown according to a further embodiment. The TGV220 in Figure 2D is similar to the TGV220 in Figure 2C, except for the orientation of the third side wall 223 relative to the upper surface 211 of the glass core 210. For example, the third side wall 223 may be substantially parallel to the upper surface 211 of the glass core 210. In such embodiments, the TGV220 does not have to have an identifiable intermediate portion 229, since the third side wall 223 remains at substantially the same depth within the glass core 210 along the entire length of the third side wall 223. That is, the first portion 226 may be in direct contact with the second portion 227.

[0024] Referring now to Figure 2E, a cross-sectional view of a glass core 210 is shown, according to an embodiment, with a TGV 220 between the top surface 211 and the bottom surface 212 of the glass core 210. In the embodiment, the TGV 220 in Figure 2E may be similar to the TGV 220 in Figure 2A, but a liner 208 is added between the TGV 220 and the glass core 210. In the embodiment, the liner 208 may be used to provide an additional buffer layer to absorb stress, otherwise stress would be induced within the glass core 210. In the embodiment, the liner 208 may be a polymer material or other low modulus material. For example, the liner 208 may be parylene or the like.

[0025] Referring now to Figure 2F, a cross-sectional view of a glass core 210 with a TGV 220 is shown according to a further embodiment. In this embodiment, the TGV 220 may have a first end (i.e., the upper side of Figure 2F) distinct from a second end (i.e., the lower side of Figure 2F). For example, the first end may include a first portion 226 having a goblet-shaped cross-section, and the second end may be an extension of the second portion 227. In such embodiments, the second laser process (described in more detail below) may be carried out only on the upper portion of the glass core 210.

[0026] Referring hereto to Figures 3A to 3F, a series of cross-sectional views are shown illustrating the process of forming a glass core 310 with a TGV 320 having a goblet-shaped cross-section, according to an embodiment. In the embodiment, the TGV 320 may be similar to any of the TGVs described in more detail herein.

[0027] Referring now to Figure 3A, a cross-sectional view of the glass core 310 is shown according to an embodiment. In this embodiment, the glass core 310 may be similar to any of the glass cores described in more detail herein.

[0028] Referring now to Figure 3B, a cross-sectional view of the glass core 310 is shown after the first laser process has been used to pattern the glass core 310. In embodiments, the first laser process may include exposing the glass core to a first type of laser. For example, the first type of laser may include a Bessel laser. The first laser process may form an opening 331 that penetrates the thickness of the glass core 310. Furthermore, a heat-affected zone 330 may be provided along the side of the opening 331.

[0029] Referring now to Figure 3C, a cross-sectional view of the glass core 310 is shown after the second laser process has been used to form recesses 332 on the top and bottom surfaces of the glass core 310. The recesses 332 may span the opening 331. In some embodiments, the recesses 332 may be located within the heat-affected zone 330. In embodiments, the recesses 332 may have side walls 334. The side walls 334 may be inclined, or they may be substantially vertical. In embodiments, the recesses 332 are wider than the width of the opening 331.

[0030] A second laser process may include a laser ablation process used to ablate a portion of the glass core 310. For example, the second laser process may use a femtosecond laser or an excimer laser. In some embodiments, the femtosecond laser may have a wavelength between 200 nm and 1,000 nm. For example, a wavelength of 530 nm may be used in some cases. However, any suitable wavelength may be used in other embodiments.

[0031] Referring now to Figure 3D, a cross-sectional view of the glass core 210 is shown, according to an embodiment, after an etching process has been used to complete the formation of an opening 340 that penetrates the thickness of the glass core 310. In embodiments, the etching process may include a wet etching process. In certain embodiments, the etching process may include a high-temperature NaOH etching chemistry. In particular, the heat-affected zone 330 may be preferentially etched by the etching chemistry. The etching process may result in an enlargement of the opening 331 and / or recess 332. The resulting opening 340 may include corner regions 318 and 319 that give the opening a goblet-shaped cross-section. For example, side walls 341 may be provided above and below the opening 340, and side walls 342 may be provided between the side walls 341. The inclination of the side walls 341 may differ from the inclination of the side walls 342. In this embodiment, the corner region closest to the surface of the glass core 310 (for example, the corner region 318) may be at least 10 μm away from the upper surface of the glass core 310, at least 20 μm away from the upper surface of the glass core 310, or at least 40 μm away from the upper surface of the glass core 310.

[0032] Referring now to Figure 3E, a cross-sectional view of the glass core 310 after the liner 308 has been applied along the surface of the opening 340 is shown according to an embodiment. In the embodiment, the liner 308 may include a low modulus material such as a polymer. For example, the liner 308 may have parylene. Although the liner 308 is shown only along the side wall of the opening 340, the liner 308 may, of course, also be deposited on the top and bottom surfaces of the glass core 310.

[0033] Referring now to Figure 3F, a cross-sectional view of the glass core 310 after the TGV320 has been formed in the opening 340 is shown according to an embodiment. In an embodiment, the TGV320 may be formed by a plating process. For example, a seed layer (not shown) may be deposited on the liner 308, and the majority of the TGV320 may be plated from the seed layer. In an embodiment, the TGV320 may be similar to any of the TGVs described in more detail herein. For example, the TGV320 may have a first portion 326, a second portion 327, and a third portion 328. The first portion 326 and the third portion 328 are wider than the second portion 327 to provide a goblet-shaped cross-section.

[0034] Referring now to Figure 4, a flow chart is shown representing a process 460 for forming a glass core having a TGV including a goblet-shaped cross-section, according to an embodiment. In the embodiment, the process for forming the TGV in the glass core may be similar to the process described above in more detail with reference to Figures 3A-3F.

[0035] In some embodiments, process 460 may begin with operation 461. Operation 461 includes exposing the glass core to a first laser process to form a heat-affected zone through the thickness of the glass core. In some embodiments, the first laser process may include the use of a Bessel laser or the like. In some embodiments, channels or holes may also be formed through the thickness of the glass core during the first laser process.

[0036] In embodiments, process 460 may be followed by operation 462, which includes exposing the glass core to a second laser process to remove a portion of the heat-affected zone on the surface of the glass core. Removal of the portion of the heat-affected zone may form a recess on the surface of the glass core. In embodiments, the recess is wider than the hole or channel formed by the first laser process. In embodiments, the second laser process may use a femtosecond laser or an excimer laser. For example, the wavelength of the femtosecond laser may be between 200 nm and 1,000 nm. In specific embodiments, the wavelength may be 530 nm.

[0037] In embodiments, process 460 may be followed by operation 463, which includes etching the heat-affected zone of the glass core to form an opening through the glass core. In embodiments, the opening has a goblet-shaped cross-section. For example, the portion where the recess of the opening was located may be wider than the bottom of the opening. The etching process may include a wet etching process. For example, a high-temperature NaOH etching chemistry may be used to etch the glass core to form an opening.

[0038] In embodiments, process 460 may be followed by operation 464, which includes applying a buffer layer onto the sidewalls of the opening. In embodiments, the buffer layer may be similar to any of the liners described in more detail herein. For example, the buffer layer may have a low modulus material such as a polymer. In specific embodiments, the buffer layer may have parylene or the like.

[0039] In embodiments, process 460 may be followed by operation 465, which includes forming vias at the opening. In embodiments, vias may be formed by a plating process. For example, a seed layer may be deposited on a buffer layer, and an electrochemical plating process may be used to plate the vias at the opening. In embodiments, vias may be analogous to any of the TGVs described in more detail herein. For example, vias may have a goblet-shaped cross-section.

[0040] Referring now to Figure 5, a cross-sectional view of the electronic system 590 is shown according to an embodiment. In an embodiment, the electronic system 590 may have a board 591 such as a printed circuit board (PCB), motherboard, etc. In an embodiment, the board 591 may be coupled to a package substrate 500 by second-level interconnects (SLI) 592. In an embodiment, the SLI 592 may have solder balls, sockets, etc.

[0041] In embodiments, the package substrate 500 may have a glass core 510 equipped with a TGV 520. The glass core 510 and TGV 520 may be similar to any of the glass cores and / or TGVs described in more detail herein. For example, the TGV 520 may have a goblet-shaped cross-section; that is, the upper and / or lower portions of the TGV are wider than the middle portion of the TGV 520. In embodiments, any particular inclination, angle, and / or shape of any of the sidewalls of the TGV 520 may be similar to any of those described in more detail herein. Although not shown in Figure 5, the TGV 520 may be separated from the glass core 510 by a low modulus material such as parylene.

[0042] In an embodiment, the package substrate 500 may also have build-up layers 593 provided above and below the glass core 510. The build-up layers 593 may include electrical wiring (not shown) that electrically connects the TGV 520 to the SLI 592 and the First Level Interconnects (FLI) 594.

[0043] In embodiments, one or more dies 595 may be coupled to the build-up layer 593 by an FLI 594. The FLI 594 may be any suitable FLI architecture, such as solder balls, copper bumps, or a hybrid bonding interface. In embodiments, one or more dies 595 may be any type of die (e.g., processor dies (e.g., central processing unit (CPU), graphics processing unit (GPU), XPU), memory dies, communication dies, power management dies, and / or similar). In embodiments, two or more dies 595 may be electrically coupled together by a bridge (not shown) embedded in or provided on the build-up layer 593.

[0044] Figure 6 shows a computing device 600 according to one embodiment of the present disclosure. The computing device 600 houses a board 602. The board 602 may include, but is not limited to, a number of components including a processor 604 and at least one communication chip 606. The processor 604 is physically and electrically coupled to the board 602. In some embodiments, at least one communication chip 606 is also physically and electrically coupled to the board 602. In further embodiments, the communication chip 606 is part of the processor 604. In embodiments, a device package is coupled to the board 602. Either or both of the processor 604 or the communication chip 606 may be coupled to the board 602 via a device package.

[0045] Other such components include, but are not limited to, volatile memory (e.g., DRAM), non-volatile memory (e.g., ROM), flash memory, graphics processors, digital signal processors, crypto processors, chipsets, antennas, displays, touchscreen displays, touchscreen controllers, batteries, audio codecs, video codecs, power amplifiers, Global Positioning System (GPS) devices, compasses, accelerometers, gyroscopes, speakers, cameras, and mass storage devices (hard disk drives, compact discs (CDs), digital versatile discs (DVDs), etc.).

[0046] The communication chip 606 enables wireless communication for the transfer of data to and from the computing device 600. The term “wireless” and its derivatives are sometimes used to describe circuits, devices, systems, methods, techniques, communication channels, etc., that can communicate data using modulated electromagnetic radiation through a non-solid medium. The term does not imply that the devices in question do not contain any wires, although in some embodiments they may not contain wires. The communication chip 606 may implement any of a number of wireless standards or protocols, including but not limited to Wi-Fi (IEEE 802.11 family), WiMAX (IEEE 802.16 family), IEEE 802.20, Long-Term Evolution (LTE), Ev-DO, HSPA+, HSDPA+, HSUPA+, EDGE, GSM, GPRS, CDMA, TDMA, DECT, Bluetooth®, and their derivatives, as well as any other wireless protocols designed as 3G, 4G, 5G, and later. The computing device 600 may include multiple communication chips 606. For example, a first communication chip 606 may be dedicated to short-range wireless communication such as Wi-Fi or Bluetooth, and a second communication chip 606 may be dedicated to longer-range wireless communication such as GPS, EDGE, GPRS, CDMA, WiMAX, LTE, Ev-DO, and others.

[0047] The processor 604 of the computing device 600 includes an integrated circuit die packaged within the processor 604. In some embodiments of this disclosure, the integrated circuit die of the processor may be a portion of a package substrate having a glass core having a TGV including a goblet-shaped cross-section formed by a dual laser process, according to embodiments described herein. The term “processor” can mean any device or part of a device that processes electronic data from registers and / or memory and converts that electronic data into other electronic data that can be stored in registers and / or memory.

[0048] The communication chip 606 also includes an integrated circuit die packaged within the communication chip 606. In accordance with another embodiment of this disclosure, the integrated circuit die of the communication chip may be a portion of a package substrate having a glass core with a TGV including a goblet-shaped cross section formed by a dual laser process, according to the embodiments described herein.

[0049] In embodiments, the computing device 600 may be a part of any device. For example, the computing device may be a part of a personal computer, server, mobile device, tablet, automobile, etc. That is, the computing device 600 is not limited to being used in any particular type of system, and may be included in any device that may benefit from computing capabilities.

[0050] The foregoing description of the manifested practices of this disclosure, including that contained in the abstract, is not intended to be exhaustive or to limit the disclosure to the exact form disclosed. While specific practices of this disclosure and examples of the disclosure are described herein for illustrative purposes only, various equivalent modifications are possible within the scope of this disclosure, as a person skilled in the art would recognize.

[0051] These changes may be made to this disclosure in light of the detailed description above. The terms used in the subsequent claims should not be construed as limiting this disclosure to the specific practices disclosed in the specification and claims. Rather, the scope of this disclosure should be determined as a whole by the subsequent claims, which should be construed in accordance with established principles of claim interpretation.

[0052] [example] Example 1: A substrate having a first surface and a second surface opposite to the first surface, and including a glass layer, The substrate has vias that penetrate it, The aforementioned EU is The first portion comprises a first side wall oriented at a first angle with respect to the first surface of the substrate, wherein the first portion of the via is located on the first surface of the substrate, The second portion comprises a second side wall oriented at a second angle with respect to the first surface of the substrate, wherein the second angle is different from the first angle, and the first portion and the second portion are located on the same side of the midline between the first surface and the second surface of the substrate. A device having.

[0053] Example 2: The narrowest width of the first part is greater than the widest width of the second part. The apparatus described in Example 1.

[0054] Example 3: The first side wall is connected to the second side wall by the third side wall. The third side wall is oriented at a third angle different from the first and second angles with respect to the first surface of the substrate. The apparatus according to claim 1 or example 2.

[0055] Example 4: The third side wall is substantially parallel to the first surface of the substrate. The apparatus described in Example 3.

[0056] Example 5: The first corner between the first side wall and the third side wall, and the second corner between the third side wall and the second side wall, are both rounded. The apparatus described in Example 3 or Example 4.

[0057] Example 6: Due to the first angle of the first side wall, the first side wall is perpendicular to the first surface of the substrate within 15°. The apparatus described in Examples 1-5.

[0058] Example 7: The first portion of the via has a thickness of 10 μm or more. The apparatus described in Examples 1-6.

[0059] Example 8: The via and the substrate further have a liner between them. The apparatus described in Examples 1-7.

[0060] Example 9: A dielectric build-up layer on the aforementioned substrate, The present invention further comprises a die located on the dielectric build-up layer, The die is electrically coupled to the via. The apparatus described in Examples 1-8.

[0061] Example 10: The via further has a third portion having a side wall oriented at a first angle with respect to the first surface of the substrate, The third portion of the via is located on the second surface of the substrate. The apparatus described in Examples 1-9.

[0062] Example 11: A substrate containing a glass layer, The substrate has vias that penetrate the thickness of the substrate, The aforementioned EU is The first corner between the first side wall of the via and the second side wall of the via, Having a second corner between the second side wall of the via and the third side wall of the via, Device.

[0063] Example 12: The first and second corners are rounded. The apparatus described in Example 11.

[0064] Example 13: The first angle defines an obtuse angle between the first side wall and the second side wall, The second angle defines the dominant angle between the second side wall and the third side wall. The apparatus described in Example 11 or Example 12.

[0065] Example 14: The first angle defines a non-orthogonal angle between the first side wall and the second side wall. The apparatus described in Examples 11-13.

[0066] Example 15: The first sidewall extends into the substrate to a depth of at least 10 μm. The apparatus described in Examples 11-14.

[0067] Example 16: The via and the substrate further have a liner between them. The apparatus described in Examples 11-15.

[0068] Example 17: The aforementioned substrate is the core of the package substrate. The apparatus described in Examples 11-16.

[0069] Example 18: Glass core and A via that penetrates the thickness of the glass core and has a goblet-shaped cross-section, The dielectric build-up layers above and below the glass core, A die electrically coupled to the via by electrical wiring in the dielectric build-up layer, A board bonded to the dielectric build-up layer and A device having.

[0070] Example 19: The glass core and the via further have a liner, The apparatus described in Example 18.

[0071] Example 20: The corner of the side wall of the via closest to the upper surface of the glass core is at least 10 μm away from the upper surface of the glass core. The apparatus described in Example 18 or Example 19. [Explanation of Symbols]

[0072] 208 Liner 210, 310, 510 glass core 211 1st side (top side) 212 2nd side (bottom side) 220, 320, 520 glass-through vias (TGV) 221 First side wall 222 Second side wall 223 Third side wall 224 Corner area 226,326 Part 1 227,327 Part 2 228,328 3rd part 229 Middle part 500 Package Substrates 590 Electronic Systems 600 Computing Devices 604 Processor 606 Communication Chip θ1 1st angle θ2 second angle

Claims

1. A substrate having a first surface and a second surface opposite to the first surface, and including a glass layer, The substrate has vias that penetrate it, The aforementioned EU is The first portion comprises a first side wall oriented at a first angle with respect to the first surface of the substrate, and the first portion of the via is located on the first surface of the substrate, The second portion comprises a second side wall oriented at a second angle with respect to the first surface of the substrate, wherein the second angle is different from the first angle, and the first portion and the second portion are located on the same side of the midline between the first surface and the second surface of the substrate. A device having.

2. The narrowest width of the first part is greater than the widest width of the second part. The apparatus according to claim 1.

3. The first side wall is connected to the second side wall by the third side wall. The third side wall is oriented at a third angle different from the first and second angles with respect to the first surface of the substrate. The apparatus according to claim 1 or 2.

4. The third side wall is substantially parallel to the first surface of the substrate. The apparatus according to claim 3.

5. The first corner between the first side wall and the third side wall and the second corner between the third side wall and the second side wall are both rounded. The apparatus according to claim 3.

6. Due to the first angle of the first side wall, the first side wall is perpendicular to the first surface of the substrate within 15°. The apparatus according to claim 1 or 2.

7. The first portion of the via has a thickness of 10 μm or more. The apparatus according to claim 1 or 2.

8. The via and the substrate further have a liner between them. The apparatus according to claim 1 or 2.

9. A dielectric build-up layer on the aforementioned substrate, The present invention further comprises a die located on the dielectric build-up layer, The die is electrically coupled to the via. The apparatus according to claim 1 or 2.

10. The via further has a third portion having a side wall oriented at a first angle with respect to the first surface of the substrate, The third portion of the via is located on the second surface of the substrate. The apparatus according to claim 1 or 2.

11. A substrate containing a glass layer, The substrate has vias that penetrate the thickness of the substrate, The aforementioned EU is The first corner between the first side wall of the via and the second side wall of the via, Having a second corner between the second side wall of the via and the third side wall of the via, Device.

12. The first and second corners are rounded. The apparatus according to claim 11.

13. The first angle defines an obtuse angle between the first side wall and the second side wall, The second angle defines the dominant angle between the second side wall and the third side wall. The apparatus according to claim 11 or 12.

14. The first angle defines a non-orthogonal angle between the first side wall and the second side wall. The apparatus according to claim 11 or 12.

15. The first sidewall extends into the substrate to a depth of at least 10 μm. The apparatus according to claim 11 or 12.

16. The via and the substrate further have a liner between them. The apparatus according to claim 11 or 12.

17. The aforementioned substrate is the core of the package substrate. The apparatus according to claim 11 or 12.

18. Glass core and A via that penetrates the thickness of the glass core and has a goblet-shaped cross-section, The dielectric build-up layers above and below the glass core, A die electrically coupled to the via by electrical wiring in the dielectric build-up layer, A board bonded to the dielectric build-up layer and A device having.

19. The glass core and the via further have a liner, The apparatus according to claim 18.

20. The corner of the side wall of the via closest to the upper surface of the glass core is at least 10 μm away from the upper surface of the glass core. The apparatus according to claim 18 or 19.

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