Substrate processing apparatus and substrate processing method

Abstract

This disclosure describes a substrate processing apparatus and a substrate processing method that can improve the cleanliness of the processing liquid supply system. [Solution] The substrate processing apparatus comprises a storage unit configured to temporarily store a processing liquid for processing substrates, a replenishment unit configured to replenish the processing liquid in the storage unit, a flow rate measuring unit configured to measure the flow rate of the processing liquid being replenished in the storage unit, a gas supply unit configured to supply gas to the storage unit to pressurize the storage unit, and a control unit. The control unit is configured to control the gas supply unit based on the value measured by the flow rate measuring unit to adjust the magnitude of the pressure into the storage unit, and to perform the process of replenishing the processing liquid from the replenishment unit to the storage unit.

Description

Technical Field

[0006] , , ,

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method.

Background Art

[0002] Patent Document 1 discloses a liquid processing apparatus including a storage tank for storing a processing liquid, a circulation line for returning the processing liquid sent from the storage tank to the storage tank, and a supply line connecting the circulation line and a discharge nozzle for discharging the processing liquid onto a substrate. When the processing liquid is not discharged from the nozzle through the supply line, the processing liquid circulates through the circulation line.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] [[ID=]35]]The present disclosure describes a substrate processing apparatus and a substrate processing method capable of enhancing the cleanliness of a processing liquid supply system.

Means for Solving the Problems

[0005] An example of the substrate processing apparatus includes a storage unit configured to temporarily store a processing liquid for processing a substrate, a replenishment unit configured to replenish the processing liquid to the storage unit, a flow rate measurement unit configured to measure the flow rate of the processing liquid replenished to the storage unit, a gas supply unit configured to supply gas to the storage unit to pressurize the inside of the storage unit, and a control unit. The control unit is configured to control the gas supply unit based on the value measured by the flow rate measurement unit to adjust the magnitude of the pressure inside the storage unit while executing a process of replenishing the processing liquid from the replenishment unit to the storage unit.

Effects of the Invention

[0006] According to the substrate processing apparatus and substrate processing method described herein, it is possible to improve the cleanliness of the processing liquid supply system. [Brief explanation of the drawing]

[0007] [Figure 1] Figure 1 is a schematic plan view showing an example of a substrate processing system. [Figure 2] Figure 2 is a schematic side view showing the substrate processing system of Figure 1. [Figure 3] Figure 3 is a schematic diagram showing an example of a processing liquid supply unit. [Figure 4] Figure 4 is a block diagram showing an example of the main components of a substrate processing system. [Figure 5] Figure 5 is a schematic diagram showing an example of the controller's hardware configuration. [Figure 6] Figure 6 is a diagram illustrating the operation of supplying the treatment liquid to the tank. [Figure 7] Figure 7 is a diagram illustrating the operation of supplying the treatment liquid to the tank. [Figure 8] Figure 8 is a diagram illustrating the operation of supplying the treatment liquid to the tank. [Figure 9] Figure 9 is a diagram illustrating the operation of supplying the treatment liquid to the tank. [Figure 10] Figure 10 is a diagram illustrating the operation of supplying the treatment liquid to the tank. [Figure 11] Figure 11 is a diagram illustrating the discharge operation of the treated liquid from the tank. [Figure 12] Figure 12 is a diagram illustrating the discharge operation of the treated liquid from the tank. [Figure 13] Figure 13 is a diagram illustrating the discharge operation of the treated liquid from the tank. [Figure 14] Figure 14 is a diagram illustrating the discharge operation of the treated liquid from the tank. [Figure 15] Figure 15 is a diagram illustrating the discharge operation of the treated liquid from the tank. [Figure 16]FIG. 16 is a diagram for explaining the discharging operation of the processing liquid from the tank.

Embodiments for Carrying Out the Invention

[0008] In the following description, the same reference numerals are used for the same elements or elements having the same function, and redundant descriptions are omitted. In this specification, when referring to the top, bottom, right, and left of the figure, the orientation of the reference numerals in the figure is used as the reference.

[0009] [Substrate Processing System] First, referring to FIGS. 1 and 2, a substrate processing system 1 (substrate processing apparatus) configured to process a substrate W will be described. The substrate processing system 1 includes a loading / unloading station 2, a processing station 3, and a controller Ctr (control unit). The loading / unloading station 2 and the processing station 3 may be arranged in a line, for example, in the horizontal direction.

[0010] The substrate W may have a disk shape, or may have a plate shape other than circular such as a polygon. The substrate W may have a notch portion where a part is cut out. The notch portion may be, for example, a notch (groove such as U-shaped or V-shaped), or a straight portion (so-called orientation flat) extending linearly. The substrate W may be, for example, a semiconductor substrate (silicon wafer), a glass substrate, a mask substrate, an FPD (Flat Panel Display) substrate, or other various substrates. The diameter of the substrate W may be, for example, about 200 mm to 450 mm.

[0011] The loading / unloading station 2 includes a mounting portion 4, a loading / unloading portion 5, and a shelf unit 6. The mounting portion 4 includes a plurality of mounting tables (not shown) arranged in the width direction (the vertical direction in FIG. 1). Each mounting table is configured to be able to mount a carrier 7. The carrier 7 is configured to accommodate at least one substrate W in a sealed state. The carrier 7 includes an opening / closing door (not shown) for taking in and out the substrate W.

[0012] The loading and unloading unit 5 is arranged adjacent to the placement unit 4 in the direction in which the loading and unloading station 2 and the processing station 3 are arranged (the left - right direction in FIG. 1). The loading and unloading unit 5 includes an opening and closing door (not shown) provided for the placement unit 4. When the opening and closing door of the carrier 7 and the opening and closing door of the loading and unloading unit 5 are both opened with the carrier 7 placed on the placement unit 4, the inside of the loading and unloading unit 5 and the inside of the carrier 7 communicate with each other.

[0013] The loading and unloading unit 5 incorporates a transfer arm A1 and a shelf unit 6. The transfer arm A1 is configured to be capable of horizontal movement in the width direction of the loading and unloading unit 5 (the up - down direction in FIG. 1), vertical movement in the vertical direction (the up - down direction in FIG. 2), and rotational movement around a vertical axis. The transfer arm A1 is configured to take out the substrate W from the carrier 7 and deliver it to the shelf unit 6, and also to receive the substrate W from the shelf unit 6 and return it into the carrier 7. The shelf unit 6 is located near the processing station 3 and is configured to mediate the transfer of the substrate W between the loading and unloading unit 5 and the processing station 3.

[0014] The processing station 3 includes a transfer unit 8 and a plurality of processing units 10. The transfer unit 8 extends horizontally, for example, in the direction in which the loading and unloading station 2 and the processing station 3 are arranged (the left - right direction in FIG. 1). The transfer unit 8 incorporates a transfer arm A2. The transfer arm A2 is configured to be capable of horizontal movement in the longitudinal direction of the transfer unit 8 (the left - right direction in FIG. 1), vertical movement in the vertical direction, and rotational movement around a vertical axis. The transfer arm A2 is configured to take out the substrate W from the shelf unit 6 and deliver it to the processing unit 10, and also to receive the substrate W from the processing unit 10 and return it into the shelf unit 6.

[0015] [Processing Unit] Next, with reference to Figure 2, the details of the processing unit 10 will be described. The processing unit 10 is configured to perform a predetermined liquid treatment on the substrate W (for example, a treatment to remove dirt and foreign matter, an etching treatment, etc.). The processing unit 10 may be a single-wafer cleaning device that cleans the substrate W one by one by spin cleaning, for example. Multiple processing units 10 (three processing units 10 in the example of Figure 2) may be stacked vertically within the processing station 3.

[0016] The processing unit 10 includes a chamber 20 (housing section), a rotating holding section 30, and a liquid supply section 40. The chamber 20 is a housing configured to allow substrates W to be loaded into and unloaded from its interior. Loading and unloading ports (not shown) are formed on the side walls of the chamber 20. The substrates W are transported into and out of the chamber 20 by a transport arm A2 through these loading and unloading ports.

[0017] Chamber 20 is configured to house a rotating holding unit 30 and a liquid supply unit 40. That is, one rotating holding unit 30 and one liquid supply unit 40 are arranged within one chamber 20. Chamber 20 includes an upper chamber 21 and a lower chamber 22. The upper chamber 21 is located above the lower chamber 22.

[0018] The rotating holding unit 30 is configured to hold and rotate the substrate W. The rotating holding unit 30 is located inside the upper chamber 21. The liquid supply unit 40 is configured to supply processing liquid L (see Figure 3) from the nozzle N to the substrate W. The liquid supply unit 40 includes a housing 41 that houses some of the elements constituting the liquid supply unit 40. The housing 41 is located inside the lower chamber 22. Alternatively, the liquid supply unit 40 may be located inside the upper chamber 21, and the rotating holding unit 30 may be located inside the lower chamber 22.

[0019] The processing solution L may be, for example, an etching solution, an organic processing solution, or a developer. The etching solution may be, for example, an acidic chemical solution or an alkaline chemical solution. The acidic chemical solution may include, for example, SC-2 solution (a mixture of hydrochloric acid, hydrogen peroxide, and pure water), SPM (a mixture of sulfuric acid and hydrogen peroxide solution), HF solution (hydrofluoric acid), DHF solution (dilute hydrofluoric acid), HNO3+HF solution (a mixture of nitric acid and hydrofluoric acid), etc. The alkaline chemical solution may include, for example, SC-1 solution (a mixture of ammonia, hydrogen peroxide, and pure water), hydrogen peroxide solution, etc. The organic processing solution may include, for example, IPA (isopropyl alcohol), thinner, etc.

[0020] [Liquid treatment] Next, with reference to Figure 3, the details of the liquid supply unit 40 will be described. The liquid supply unit 40 includes a liquid source 42 (replenishment unit), valves V1 to V12, filters F1 to F4, pressure gauge ME1 (pressure measuring unit), cooling unit 43, flow meters ME2 and ME3, tanks T1 and T2, gas source 44 (gas supply unit), electro-pneumatic regulators ER1 and ER2 (gas supply unit), relief valves VR1 and VR2, nozzle N, and heating unit 45.

[0021] The liquid source 42 is the source of the treatment liquid L and is configured to replenish the treatment liquid L in tanks T1 and T2. The liquid source 42 is connected to tank T1 (storage section) via pipes D1 and D2, and is also connected to tank T2 (another storage section) via pipes D1 and D3. That is, the upstream end of pipe D1 is connected to the liquid source 42. The downstream end of pipe D1 is connected to the upstream ends of pipes D2 and D3. The downstream end of pipe D2 is connected to the bottom wall of tank T1. The downstream end of pipe D3 is connected to the bottom wall of tank T2.

[0022] In piping D1, the following components are arranged in order from upstream: valve V1, filter F1 (another filter), pressure gauge ME1, cooling unit 43, flow meter ME2 (flow measurement unit), valve V2, and filter F2. Although not shown in the diagram, piping D1 may branch between filter F1 and pressure gauge ME1, and the processing liquid L may be supplied to the housing 41 of the liquid supply unit 40 of another processing unit 10 among the multiple processing units 10 arranged vertically.

[0023] A valve V3 (flow rate adjustment unit) is located in piping D2. Specifically, valve V3 is located between filter F2 and tank T1 and is configured to adjust the flow rate of the processed liquid L flowing into tank T1 according to its opening degree. A valve V4 (flow rate adjustment unit) is located in piping D3. Specifically, valve V4 is located between filter F2 and tank T2 and is configured to adjust the flow rate of the processed liquid L flowing into tank T2 according to its opening degree.

[0024] Valves V1 to V4 are configured to open and close based on operating signals from controller Ctr. Filter F1 is located upstream of flow meter ME2. Filter F1 is configured to remove impurities contained in the treatment liquid L flowing through pipe D1. The filter material constituting filter F1 may be made of, for example, polytetrafluoroethylene (PTFE) or polyethylene (PE). In this case, filter F1 removes metal-containing impurities contained in the treatment liquid L.

[0025] The pressure gauge ME1 is configured to measure the pressure of the treatment liquid L flowing through the pipe D1 and transmit the measurement data to the controller Ctr. The cooling unit 43 is configured to operate based on the operation signal from the controller Ctr and to cool the treatment liquid L flowing through the pipe D1. By cooling the treatment liquid L with the cooling unit 43, organic matter contained in the treatment liquid L condenses. This makes it easier for the filter F2 located downstream of the cooling unit 43 to remove the organic matter.

[0026] The flow meter ME2 is configured to measure the flow rate of the treatment liquid L flowing through the pipe D1 and transmit the measurement data to the controller Ctr. The filter F2 is placed between the flow meter ME2 and tanks T1 and T2. The filter F2 is configured to remove impurities contained in the treatment liquid L flowing through the pipe D1. The filter material constituting the filter F2 may be made of, for example, polyimide, PTFE (polytetrafluoroethylene), PCTFE (polychlorotrifluoroethylene), nylon, etc.

[0027] Tanks T1 and T2 are configured to temporarily store the processing liquid L. Tank T1 is equipped with sensors SE11 to SE13 (detection units). Tank T2 is equipped with sensors SE21 to SE23 (detection units). Sensors SE11 to SE13 and SE21 to SE23 are so-called water level gauges and are configured to measure the liquid level (liquid surface height) of the processing liquid L in tanks T1 and T2. Sensors SE11 to SE13 and SE21 to SE23 are configured to transmit the measured liquid level data to the controller Ctr.

[0028] Sensors SE11 to SE13 are arranged in this order from bottom to top relative to tank T1. Specifically, sensor SE11 is located near the bottom of tank T1. Sensor SE12 is located at the top of tank T1. Sensor SE13 is located near the top of tank T1. In other words, sensor SE11 turns ON when the liquid level in tank T1 rises above the vicinity of the bottom of tank T1, and turns OFF when the liquid level in tank T1 falls below the vicinity of the bottom of tank T1. The same applies to sensors SE12 and SE13.

[0029] Sensors SE21 to SE23 are arranged in this order from bottom to top relative to tank T2. Specifically, sensor SE21 is located near the bottom of tank T2. Sensor SE22 is located at the top of tank T2. Sensor SE23 is located near the top of tank T2. In other words, sensor SE21 turns ON when the liquid level in tank T2 rises above the vicinity of the bottom of tank T2, and turns OFF when the liquid level in tank T2 falls below the vicinity of the bottom of tank T2. The same applies to sensors SE22 and SE23.

[0030] The gas source 44 is a gas supply source and is configured to supply gas to tanks T1 and T2 to pressurize the inside of tanks T1 and T2. The gas may be, for example, an inert gas. The inert gas may be, for example, nitrogen gas. The gas source 44 is connected to tank T1 via pipes D4 and D5 (first flow paths) and to tank T2 via pipes D4 and D6 (first flow paths). That is, the upstream end of pipe D4 is connected to the gas source 44. The downstream end of pipe D4 is connected to the upstream ends of pipes D5 and D6. The downstream end of pipe D5 is connected to the top wall of tank T1. The downstream end of pipe D6 is connected to the top wall of tank T2.

[0031] A valve V5 is located in piping D4. In piping D5, from upstream to downstream, an electro-pneumatic regulator ER1, a filter F3, and a valve V6 are located. In piping D6, from upstream to downstream, an electro-pneumatic regulator ER2, a filter F4, and a valve V7 are located.

[0032] From the section of piping D5 between valve V6 (gas supply section) and tank T1, piping D7 (second flow path) branches off and extends. The downstream end of piping D7 is connected to the exhaust port. Valve V8 is located in piping D7. From the section of piping D5 between valve V6 and the branching point of piping D7, piping D8 branches off and extends. The downstream end of piping D8 is connected to the downstream side of valve V8 in piping D7. Relief valve VR1 is located in piping D8.

[0033] From the section of piping D6 between valve V7 (gas supply section) and tank T2, piping D9 (second flow path) branches off and extends. The downstream end of piping D9 is connected to the exhaust port. Valve V9 is located in piping D9. From the section of piping D6 between valve V7 and the branching point of piping D9, piping D10 branches off and extends. The downstream end of piping D10 is connected to the downstream side of valve V10 in piping D9. Relief valve VR2 is located in piping D10.

[0034] Valves V5 to V9 are configured to open and close based on operating signals from controller Ctr. Electro-pneumatic regulators ER1 and ER2 operate based on operating signals from controller Ctr and are configured to continuously control the pressure of the gas supplied from gas source 44 in proportion to the electrical signal. In other words, electro-pneumatic regulators ER1 and ER2 are configured to adjust the magnitude of the gas pressure into tanks T1 and T2.

[0035] Filters F3 and F4 are configured to remove impurities from the gas flowing through pipes D5 and D6, respectively. Relief valves VR1 and VR2 are configured to automatically release pressure when a pressure greater than a predetermined pressure occurs in pipes D5 and D6, respectively.

[0036] The nozzle N is positioned within the upper chamber 21 so as to be located above the substrate W held by the rotating holding unit 30. The nozzle N may be configured to move horizontally or vertically above the substrate W by a drive source (not shown).

[0037] Nozzle N is fluidically connected to tank T1 via pipes D11 and D13, and also fluidly connected to tank T2 via pipes D12 and D13. Specifically, the upstream end of pipe D11 is connected to the bottom wall of tank T1. The downstream end of pipe D11 is connected to the downstream end of pipe D12 and the upstream end of pipe D13. The upstream end of pipe D12 is connected to the bottom wall of tank T2. The downstream end of pipe D12 is connected to the downstream end of pipe D11 and the upstream end of pipe D13. The downstream end of pipe D13 is connected to nozzle N.

[0038] A valve V10 is located in pipe D11. A valve V11 is located in pipe D12. In pipe D13, the flow meter ME3, heating unit 45, and valve 12 are located in order from upstream.

[0039] Valves V10 to V12 are configured to open and close based on operating signals from the controller Ctr. The flow meter ME3 is configured to measure the flow rate of the treatment liquid L flowing through piping D13 and transmit the measurement data to the controller Ctr.

[0040] The heating unit 45 operates based on an operation signal from the controller Ctr and is configured to heat the processing liquid L flowing through the piping D13. By heating the processing liquid L with the heating unit 45, the processing liquid L reaches a temperature suitable for substrate processing. In this way, by heating the processing liquid L immediately before discharge from the nozzle N, the elution of foreign matter such as particles from each component is suppressed, making it possible to improve the cleanliness of the processing liquid L supplied to the substrate W.

[0041] [Controller Details] The controller Ctr is configured to partially or entirely control the board processing system 1. As illustrated in Figure 4, the controller Ctr has a reading unit M1, a storage unit M2, a processing unit M3, and an instruction unit M4 as functional modules. These functional modules are merely a convenient division of the controller Ctr's functions into multiple modules, and do not necessarily mean that the hardware constituting the controller Ctr is divided into such modules. Each functional module is not limited to being implemented by program execution, but may also be implemented by a dedicated electrical circuit (e.g., a logic circuit) or an integrated circuit (ASIC: Application Specific Integrated Circuit) that integrates these.

[0042] The reading unit M1 is configured to read a program from a computer-readable recording medium RM. The recording medium RM stores a program for operating each part of the substrate processing system 1. The recording medium RM may be, for example, a semiconductor memory, an optical recording disk, a magnetic recording disk, or a magneto-optical recording disk. In the following description, each part of the substrate processing system 1 may include the valves V1 to V12, the cooling unit 43, the heating unit 45, and the electro-pneumatic regulators ER1 and ER2.

[0043] The memory unit M2 is configured to store various types of data. For example, the memory unit M2 may store programs read from the recording medium RM by the reading unit M1, setting data input from the operator via an external input device (not shown), etc. The memory unit M2 may also store data on processing conditions (processing recipes) for processing the substrate W, for example. The memory unit M2 may also store data on pressure measured by the pressure gauge ME1, flow rate data measured by flow meters ME2 and ME3, and liquid level data acquired by sensors SE11 to SE13 and SE21 to SE23, for example.

[0044] The processing unit M3 is configured to process various types of data. For example, the processing unit M3 may generate signals to operate various parts of the substrate processing system 1 based on various types of data stored in the memory unit M2. For example, the processing unit M3 may generate signals to adjust the opening of valves V3 and V4 based on pressure data measured by the pressure gauge ME1. This adjusts the flow rate of the processing liquid L flowing into tanks T1 and T2. The adjustment of the opening of valves V3 and V4 may be performed continuously while the processing liquid L is being replenished in tanks T1 and T2, or it may be performed at the timing when the replenishment of the processing liquid L in tanks T1 and T2 begins.

[0045] The processing unit M3 may, for example, generate signals to control the electro-pneumatic regulators ER1 and ER2 based on flow rate data measured by the flow meter ME2, so that the gas pressure becomes a predetermined magnitude. The processing unit M3 may, for example, generate signals to control the electro-pneumatic regulators ER1 and ER2 based on flow rate data measured by the flow meter ME2, so that the flow rate of the processing liquid L flowing through the filter F2 becomes a flow rate set according to the filter F2. In other words, the processing unit M3 may control the electro-pneumatic regulators ER1 and ER2 to vary the gas pressure acting on tanks T1 and T2 so that the flow rate of the processing liquid L flowing through the filter F2 becomes a constant magnitude.

[0046] The processing unit M3 may, for example, generate signals to control the electro-pneumatic regulators ER1 and ER2 so that the gas pressure is at a predetermined level, based on flow rate data measured by the flow meter ME3. The processing unit M3 may, for example, generate signals to control the electro-pneumatic regulators ER1 and ER2 so that the flow rate of the processing liquid L flowing through the piping D13 is at a predetermined level, based on flow rate data measured by the flow meter ME3. In other words, the processing unit M3 may control the electro-pneumatic regulators ER1 and ER2 to vary the gas pressure acting on tanks T1 and T2 so that the flow rate of the processing liquid L flowing through the piping D13 is at a level suitable for processing the substrate W (a level set in the processing recipe). Note that the gas pressure acting on tanks T1 and T2 here may be set higher than the gas pressure acting on tanks T1 and T2 when replenishing the processing liquid L in tanks T1 and T2.

[0047] The processing unit M3 may determine which of the tanks T1 and T2 to pressurize with gas based on the liquid level data detected by sensors SE11 to SE13 and SE21 to SE23, and generate a signal to control one of the electro-pneumatic regulators ER1 or ER2. For example, if the liquid level detected by sensors SE11 to SE13 indicates that the amount of processing liquid L in tank T1 is less than a predetermined value, the processing unit M3 may generate a signal to control the electro-pneumatic regulator ER2 and supply gas to tank T2.

[0048] The processing unit M3 may determine, based on the liquid level data detected by sensors SE11 and SE21, that the amount of processing liquid L in tanks T1 and T2 is at the lower limit. The processing unit M3 may determine, based on the liquid level data detected by sensors SE12 and SE22, that the amount of processing liquid L in tanks T1 and T2 is at the upper limit. The processing unit M3 may determine, based on the liquid level data detected by sensors SE13 and SE23, that the amount of processing liquid L in tanks T1 and T2 is in an abnormal state, exceeding the upper limit. If this abnormal state is detected, the processing unit M3 may generate a signal to emergency stop the replenishment of processing liquid L to tanks T1 and T2.

[0049] The processing unit M3 may generate signals to open valves V8 and V9 so that when supplying gas to tanks T1 and T2, gas is supplied to tanks T1 and T2 while exhausting gas through pipes D7 and D9.

[0050] The instruction unit M4 is configured to transmit the operation signals generated in the processing unit M3 to each part of the substrate processing system 1.

[0051] The hardware of the controller Ctr may consist of, for example, one or more control computers. The controller Ctr may include a circuit C1 as a hardware configuration, as illustrated in Figure 5. The circuit C1 may consist of electrical circuit elements. The circuit C1 may include, for example, a processor C2, memory C3, storage C4, a driver C5, and input / output ports C6.

[0052] The processor C2 may be configured to implement each of the above-described functional modules by executing a program in cooperation with at least one of the memory C3 and storage C4 and performing signal input and output via the input / output port C6. The memory C3 and storage C4 may function as a storage unit M2. The driver C5 may be a circuit configured to drive each part of the board processing system 1. The input / output port C6 may be configured to mediate signal input and output between the driver C5 and each part of the board processing system 1.

[0053] The board processing system 1 may have one controller Ctr, or it may have a controller group (control unit) composed of multiple controllers Ctr. If the board processing system 1 has a controller group, each of the above functional modules may be realized by one controller Ctr, or by a combination of two or more controllers Ctr. If the controller Ctr is composed of multiple computers (circuit C1), each of the above functional modules may be realized by one computer (circuit C1), or by a combination of two or more computers (circuit C1). The controller Ctr may have multiple processors C2. In this case, each of the above functional modules may be realized by one processor C2, or by a combination of two or more processors C2.

[0054] [How to replenish the treatment solution in the tank] Next, referring to Figures 6 to 10, the method for replenishing the processing solution L in tanks T1 and T2 (substrate processing method) will be explained. Here, the method for replenishing the processing solution L in tank T1 and the method for replenishing the processing solution L in tank T2 are carried out using the same procedure. Therefore, the method for replenishing the processing solution L in tank T1 will be described below, and the explanation for replenishing the processing solution L in tank T2 will be omitted.

[0055] First, as shown in Figure 6, the controller Ctr controls valves V5, V6, V8 and the electro-pneumatic regulator ER1 to open valves V5, V6, V8, and exhaust gas from piping D7 while pressurizing the tank T1 with gas. As a result, the tank T1 is pre-pressurized with gas, which suppresses the inflow of the treatment liquid L into the tank T1 at an excessively large flow rate (so-called overshoot) when replenishing the tank T1 with treatment liquid L.

[0056] Next, as shown in Figure 7, the controller Ctr controls the valves V1, V2, V3 and the cooling unit 43 to open the valves V1, V2, V3 and operate the cooling unit 43. This replenishes the tank T1 with the processed liquid L from the liquid source 42. At this time, the opening degree of valve V3 may be determined based on the pressure data measured by the pressure gauge ME1. Alternatively, the electro-pneumatic regulator ER1 may be controlled so that the gas pressure reaches a predetermined level based on the flow rate data measured by the flow meter ME2. Or, the electro-pneumatic regulator ER1 may be controlled so that the flow rate of the processed liquid L flowing through the filter F2 reaches a flow rate set according to the filter F2, based on the flow rate data measured by the flow meter ME2.

[0057] When the processing liquid L from the liquid source 42 is replenished into tank T1 and the sensor SE12 is turned ON (when the liquid level in tank T1 reaches the sensor SE12), the controller Ctr controls valves V2 and V6 to close them, as shown in Figure 8. This stops the replenishment of the processing liquid L into tank T1, and the gas in tank T1 is exhausted through pipes D5 and D7.

[0058] Next, as shown in Figure 9, the controller Ctr controls valve V3 to close it. This prevents the discharge of the treatment liquid L from tank T1. Next, as shown in Figure 10, the controller Ctr controls valve V8 to close it. With these steps, tank T1 is sealed and the replenishment of treatment liquid L into tank T1 is completed. Note that the timing of closing valve V8 may be after the time required for the pressure inside tank T1 to become equal to the atmospheric pressure has elapsed.

[0059] [Method for supplying the treated liquid from a tank to a substrate] Next, referring to Figures 11 to 16, the method of supplying the processing liquid L from tanks T1 and T2 to the substrate W (substrate processing method) will be explained. Here, the method of supplying the processing liquid L from tank T1 to the substrate W and the method of supplying the processing liquid L from tank T2 to the substrate W are carried out using the same procedure. Therefore, the method of supplying the processing liquid L from tank T1 to the substrate W will be described below, and the explanation of the method of supplying the processing liquid L from tank T2 to the substrate W will be omitted.

[0060] First, as shown in Figure 11, the controller Ctr controls valves V5 and V6 and the electro-pneumatic regulator ER1 to open valves V5 and V6 and pressurize the tank T1 with gas. As a result, the tank T1 is pressurized with gas.

[0061] Next, as shown in Figure 12, the controller Ctr controls the valves V10 and V12 and the heating unit 45 to open the valves V10 and V12 and operate the heating unit 45. As a result, the processing liquid L flows from the gas-pressurized tank T1 through the pipes D11 and D13 to the nozzle N, and the processing liquid L heated by the heating unit 45 is supplied from the nozzle N to the substrate W. At this time, the electro-pneumatic regulator ER1 may be controlled so that the gas pressure is at a predetermined level based on the flow rate data measured by the flow meter ME3. Alternatively, the electro-pneumatic regulator ER1 may be controlled so that the flow rate of the processing liquid L flowing through the pipe D13 is at a predetermined level based on the flow rate data measured by the flow meter ME3.

[0062] When a predetermined amount of processing liquid L (for example, the amount of processing liquid L set in the processing recipe) is supplied from tank T1, controller Ctr controls valve V12 to close it, as shown in Figure 13. This stops the discharge of processing liquid L from nozzle N.

[0063] Next, as shown in Figure 14, the controller Ctr controls valve V10 to close it. This prevents the discharge of the processing liquid L from tank T1. Next, as shown in Figure 15, the controller Ctr controls valves V6 and V8 to close valve V6 and open valve V8. This causes the gas in tank T1 to be exhausted through pipes D5 and D7. Next, as shown in Figure 16, the controller Ctr controls valve V8 to close it. With these steps, tank T1 is sealed and the supply of processing liquid L from tank T1 to substrate W is completed.

[0064] [Effect] As shown in the above example, the processing liquid L is temporarily stored in tanks T1 and T2 in accordance with the pressure acting within tanks T1 and T2, without requiring circulation of the processing liquid L as described in Patent Document 1. Therefore, the number of drive elements that can become dust sources (e.g., pumps, constant pressure valves, etc.) is reduced, and the mixing of foreign matter such as particles into the processing liquid L is suppressed. In addition, the length of the flow path of the processing liquid L is shortened, so the elution of foreign matter from piping and other components constituting the flow path is suppressed. Consequently, it is possible to improve the cleanliness of the processing liquid L supply system.

[0065] In the above example, a filter F2 is placed between the flow meter ME2 and tanks T1 and T2. Therefore, the processing liquid L is filtered by the filter F2 before it reaches tanks T1 and T2 from the liquid source 42. As a result, the purified processing liquid L can be stored in tanks T1 and T2. Furthermore, since circulation of the processing liquid L is not required as described in Patent Document 1, the processing liquid L passes through the filter F2 only once. As a result, the amount of liquid in contact with the filter F2 before the processing liquid L is supplied to the substrate W is significantly reduced. Consequently, the lifespan of the filter F2 can be extended.

[0066] Incidentally, each type of filter has an optimal flow rate for filtration. If the flow rate is significantly lower than this optimal rate, the contact time of the processing liquid L with the filter increases, and foreign matter tends to leach out of the filter. If the flow rate is significantly higher than this optimal rate, the processing liquid L flows through the region of the filter with low pressure loss, and the filtration efficiency tends to decrease. However, as shown in the above example, the electro-pneumatic regulators ER1 and ER2 are controlled so that the flow rate of the processing liquid L flowing through filter F2 is set according to the filter F2. Therefore, it is possible to obtain a predetermined filtration efficiency while suppressing the leaching of foreign matter from filter F2.

[0067] In the above example, valves V3 and V4 are positioned between filter F2 and tanks T1 and T2. Therefore, by adjusting the flow rate of the processing liquid L flowing into tanks T1 and T2 with valves V3 and V4, the flow rate of the processing liquid L flowing into tanks T1 and T2 becomes less likely to fluctuate even if the pressure of the processing liquid L supplied from liquid source 42 fluctuates. Consequently, the flow rate of the processing liquid L passing through filter F2 also becomes less likely to fluctuate. Thus, it becomes possible to obtain a predetermined filtration efficiency while suppressing the elution of foreign matter from filter F2.

[0068] In the above example, valves V3 and V4 are controlled based on the pressure value of the processing liquid L measured by the pressure gauge ME1. Therefore, even if there are fluctuations in the pressure of the processing liquid L supplied from the liquid source 42, the flow rate set in valves V3 and V4 is adjusted each time. Consequently, the flow rate of the processing liquid L passing through the filter F2 becomes less prone to fluctuations. Thus, it is possible to obtain a predetermined filtration efficiency while suppressing the elution of foreign matter from the filter F2.

[0069] In the above example, the filter material of the filter F1 located upstream of the flow meter ME2 is made of polytetrafluoroethylene (PTFE), polyethylene (PE), etc., and the treatment liquid L may be isopropyl alcohol. In this case, since isopropyl alcohol, which is the treatment liquid L, is an organic solvent, it may contain metal-containing impurities. Therefore, the metal-containing impurities are removed by the filter F1 installed upstream. Thus, it is possible to improve the cleanliness of the treatment liquid L supply system.

[0070] In the above example, the rotating holding unit 30 and the liquid supply unit 40 are arranged within the same chamber 20. Therefore, the flow path length of the processing liquid L can be further shortened. Consequently, it is possible to improve the cleanliness of the processing liquid L supply system. In addition, in each processing unit 10, the difference in head between the tanks T1 and T2 and the discharge port of the nozzle N can be made approximately the same, making it possible to equalize the control of the substrate processing and the processing accuracy of the substrate W.

[0071] In the above example, the processing liquid L in tanks T1 and T2 is discharged from nozzle N by pressurizing the tanks T1 and T2 with gas. Therefore, when supplying the processing liquid L from tanks T1 and T2 to the substrate W, there is no need for drive elements that could become dust sources (e.g., pumps, constant pressure valves, etc.), and the same gas source 44 and electro-pneumatic regulators ER1 and ER2 are used as when replenishing the processing liquid L in tanks T1 and T2. Consequently, the mixing of foreign matter such as particles into the processing liquid L is suppressed, making it possible to improve the cleanliness of the processing liquid L supply system. In addition, the configuration of the processing unit 10 is simplified, making it possible to perform substrate processing at a low cost.

[0072] As shown in the above example, when replenishing the treatment liquid L in tanks T1 and T2, gas is supplied to tanks T1 and T2 while simultaneously exhausting gas, thereby pressurizing tanks T1 and T2. Therefore, even if the volume of gas in tanks T1 and T2 decreases as the treatment liquid L is replenished, the same amount of gas is discharged from piping D7. Thus, it is possible to replenish the treatment liquid L in tanks T1 and T2 while pressurizing them with gas at a predetermined pressure without requiring any special operations.

[0073] [Differentiation] The disclosures herein should be considered in all respects to be illustrative and not restrictive. Various omissions, substitutions, and modifications may be made to the above examples without departing from the claims and the gist thereof.

[0074] (1) In the above example, the processing liquid L was heated by the heating unit 45 when it was discharged from the nozzle N, but it is also possible to provide heat sources in the tanks T1 and T2 to heat the processing liquid L inside the tanks T1 and T2.

[0075] (2) For example, if the controller Ctr determines that the amount of processing liquid L in tank T1 is less than a predetermined value (for example, sensor SE11 is OFF), the electro-pneumatic regulator ER2 and valve V7 may be controlled. As a result, air is supplied to tank T2 and tank T2 is pressurized, so the processing liquid L in tank T2 is discharged from nozzle N. In this case, even if the amount of processing liquid L in tank T1 is low, processing liquid L is supplied from tank T2. Therefore, the waiting time for substrate processing is reduced. Thus, productivity can be increased. In addition, by replenishing the processing liquid L in tank T1 while supplying processing liquid L from tank T2, the waiting time for subsequent substrate processing is also reduced. Therefore, further improvements in productivity are possible.

[0076] (3) For example, if the controller Ctr determines that the amount of processing liquid L in tank T1 is less than a predetermined value (for example, sensor SE11 is OFF) while the processing liquid L is being supplied from tank T1, the pressurization of tank T1 may be stopped and the pressurization of tank T2 may be started. That is, when the controller Ctr makes the above determination, the closing of the electro-pneumatic regulator ER1 and valve V6 and the start of control of the electro-pneumatic regulator ER2 and valve V7 may be performed almost simultaneously. In this case, even if the amount of processing liquid L in tank T1 falls below a predetermined value, the processing liquid will continue to be supplied from tank T2. Therefore, the supply of processing liquid L to the substrate W during processing of the substrate W is prevented. Thus, substrate processing can be reliably performed.

[0077] (4) For example, the controller Ctr may determine whether there is a quantity of processing liquid L in tanks T1 and T2 equal to or greater than the amount of processing liquid L specified in the processing recipe. If there is a quantity of processing liquid L equal to or greater than the amount of processing liquid L in tanks T1 and T2, the processing liquid L may be supplied from tanks T1 and T2 to nozzle N. In this case, interruptions in the supply of processing liquid L from tanks T1 and T2 to substrate W are prevented. This makes it possible to reliably perform substrate processing.

[0078] [Other examples] Example 1. An example of a substrate processing apparatus comprises a storage unit configured to temporarily store a processing liquid for processing substrates, a replenishment unit configured to replenish the processing liquid in the storage unit, a flow rate measuring unit configured to measure the flow rate of the processing liquid being replenished in the storage unit, a gas supply unit configured to supply gas to the storage unit to pressurize the storage unit, and a control unit. The control unit is configured to control the gas supply unit based on the value measured by the flow rate measuring unit to adjust the magnitude of the pressure into the storage unit, and to perform the process of replenishing the processing liquid from the replenishment unit to the storage unit. In this case, the processing liquid is temporarily stored in the storage unit in accordance with the pressure acting in the storage unit, without requiring circulation of the processing liquid as described in Patent Document 1. Therefore, the number of drive elements that can be sources of dust generation (e.g., pumps, constant pressure valves, etc.) is reduced, and the mixing of foreign matter such as particles into the processing liquid is suppressed. In addition, the length of the processing liquid flow path is shortened, so the elution of foreign matter from piping etc. that constitute the flow path is suppressed. Therefore, it is possible to improve the cleanliness of the processing liquid supply system.

[0079] Example 2. The apparatus of Example 1 may further include a filter positioned between the flow rate measuring section and the storage section. In this case, the processing liquid is filtered by the filter before it reaches the storage section from the replenishment section. Therefore, it is possible to store the purified processing liquid in the storage section. Also, since circulation of the processing liquid as described in Patent Document 1 is not required, the processing liquid passes through the filter only once. Therefore, the amount of liquid in contact with the filter before the processing liquid is supplied to the substrate is significantly reduced. Consequently, it is possible to extend the lifespan of the filter.

[0080] Example 3. In the apparatus of Example 2, the process of replenishing the processing liquid from the replenishment unit to the storage unit may include controlling the gas supply unit so that the value measured by the flow rate measuring unit becomes the flow rate set according to the filter, thereby adjusting the magnitude of the pressure into the storage unit. Each type of filter has a flow rate suitable for filtration. If the flow rate is significantly lower than this, the contact time of the processing liquid with the filter increases, and foreign matter tends to leach out of the filter. If the flow rate is significantly higher than this, the processing liquid flows through the region of the filter with low pressure loss, and the filtration efficiency tends to decrease. However, according to Example 3, the gas supply unit is controlled so that the flow rate of the processing liquid flowing through the filter becomes the flow rate set according to the filter. Therefore, it is possible to obtain a predetermined filtration efficiency while suppressing the leaching of foreign matter from the filter.

[0081] Example 4. In the apparatus of Example 2 or Example 3, the filter material constituting the filter may be made of polyimide.

[0082] Example 5. Any of the devices in Examples 2 to 4 may further include a flow rate adjustment unit positioned between the filter and the storage unit, and configured to adjust the flow rate of the processed liquid flowing into the storage unit. In this case, by adjusting the flow rate of the processed liquid flowing into the storage unit in the flow rate adjustment unit, the flow rate of the processed liquid flowing into the storage unit will not fluctuate easily even if the pressure of the processed liquid supplied from the replenishment unit fluctuates. Therefore, the flow rate of the processed liquid passing through the filter will also not fluctuate easily. Thus, it is possible to obtain a predetermined filtration efficiency while suppressing the elution of foreign matter from the filter.

[0083] Example 6. The apparatus of Example 5 may further include a pressure measuring unit configured to measure the pressure of the processing liquid flowing upstream of the filter, and the control unit may further perform a process of adjusting the flow rate of the processing liquid flowing into the storage unit by controlling the flow rate adjustment unit based on the value measured by the pressure measuring unit. In this case, even if there is a fluctuation in the pressure of the processing liquid supplied from the replenishment unit, the flow rate set in the flow rate adjustment unit is adjusted each time. As a result, the flow rate of the processing liquid passing through the filter becomes less prone to fluctuation. Consequently, it becomes possible to obtain a predetermined filtration efficiency while suppressing the elution of foreign matter from the filter.

[0084] Example 7. Any of the devices in Examples 1 to 6 further includes another filter located upstream of the flow rate measuring section, wherein the filter material constituting the other filter is made of polytetrafluoroethylene or polyethylene, and the treatment liquid may be isopropyl alcohol. In this case, since isopropyl alcohol (IPA), which is the treatment liquid, is an organic solvent, it may contain metal-containing impurities. Therefore, the metal-containing impurities are removed by the other filter installed upstream. Thus, it is possible to improve the cleanliness of the treatment liquid supply system.

[0085] Example 8. Any of the devices in Examples 1 to 7 may further include a rotating holding unit configured to hold and rotate a substrate, and a housing unit configured to house the rotating holding unit and the storage unit. In this case, the storage unit for storing the processing liquid and the rotating holding unit for rotating and holding the substrate to which the processing liquid is supplied from the storage unit are located within the same housing unit. Therefore, the length of the processing liquid flow path can be further shortened. Consequently, it is possible to improve the cleanliness of the processing liquid supply system.

[0086] Example 9. Any apparatus from Examples 1 to 8 may further include a nozzle fluidly connected to the storage section, and the control unit may be configured to control the gas supply unit to pressurize the storage section, thereby further performing a process of discharging the processing liquid from the nozzle. In this case, when supplying the processing liquid from the storage section to the substrate, there is no need for a drive element that could become a dust source (e.g., a pump, a constant pressure valve, etc.), and the same gas supply unit used when replenishing the processing liquid in the storage section is used. As a result, the mixing of foreign matter such as particles into the processing liquid is suppressed, making it possible to improve the cleanliness of the processing liquid supply system. In addition, the configuration of the substrate processing apparatus is simplified, making it possible to perform substrate processing at a low cost.

[0087] Example 10. In the apparatus of Example 9, the process of discharging the processing liquid from the nozzle may include controlling the gas supply unit to pressurize the storage unit at a pressure higher than the pressure used in the process of replenishing the processing liquid from the replenishment unit to the storage unit.

[0088] Example 11. The apparatus of Example 9 or Example 10 further comprises another reservoir configured to temporarily store processing liquid, the nozzle is fluidly connected to the other reservoir, and the gas supply unit is configured to supply gas to the other reservoir to pressurize the other reservoir, and the process of discharging the processing liquid from the nozzle may include controlling the gas supply unit to pressurize the other reservoir when the amount of processing liquid in the reservoir is less than a predetermined value, thereby discharging the processing liquid from the other reservoir through the nozzle. In this case, even if the amount of processing liquid in the reservoir is low, processing liquid is supplied from the other reservoir. Therefore, the waiting time for substrate processing is reduced. Thus, productivity can be increased. In addition, by replenishing the processing liquid in the reservoir while the processing liquid is being supplied from the other reservoir, the waiting time for subsequent substrate processing is also reduced. Therefore, further improvements in productivity are possible.

[0089] Example 12. The apparatus of Example 11 further includes a detection unit for detecting the amount of processing liquid in a storage unit. The process of discharging the processing liquid from a nozzle may include, when the detection unit detects that the amount of processing liquid in the storage unit has fallen below a predetermined value, controlling the gas supply unit during the discharge of processing liquid from the nozzle to stop pressurizing the storage unit and start pressurizing another storage unit. In this case, even if the amount of processing liquid in the storage unit falls below a predetermined value, processing liquid is continuously supplied from the other storage unit. Therefore, interruptions in the supply of processing liquid to the substrate during substrate processing are prevented. Thus, substrate processing can be reliably performed.

[0090] Example 13. In the apparatus of Example 11, the process of discharging the processing liquid from the nozzle may include controlling the gas supply unit to pressurize the storage unit or the other storage unit, thereby discharging the processing liquid from the storage unit or the other storage unit from the nozzle, if there is more processing liquid in the storage unit or the other storage unit than the amount of processing liquid specified in the substrate processing recipe. In this case, interruptions in the supply of processing liquid from the storage unit or the other storage unit to the substrate are prevented. Therefore, substrate processing can be reliably performed.

[0091] Example 14. In any of the apparatuses in Examples 1 to 13, the gas supply unit includes a first flow path connected to the storage unit and a second flow path branching from the first flow path, and the process of replenishing the storage unit from the replenishment unit may include controlling the gas supply unit to supply gas into the storage unit through the first flow path while exhausting gas from the second flow path, thereby pressurizing the storage unit. In this case, even if the volume of gas in the storage unit decreases as the storage unit is replenished with the processing liquid, the same amount of gas is discharged from the second flow path. Therefore, it is possible to replenish the storage unit with the processing liquid while pressurizing the storage unit with gas at a predetermined pressure without requiring any special operations.

[0092] Example 15. An example of a substrate processing method includes supplying gas from a gas supply unit to a storage unit configured to temporarily store a processing liquid for processing substrates, thereby pressurizing the storage unit; measuring the flow rate of the processing liquid when it is replenished in the storage unit by a flow rate measuring unit; and replenishing the processing liquid from a replenishment unit to the storage unit while adjusting the magnitude of the pressure supplied to the storage unit by the gas supply unit based on the value measured by the flow rate measuring unit. In this case, the same effects and advantages as the apparatus in Example 1 can be obtained.

[0093] Example 16. In the method of Example 15, replenishing the processing liquid from the replenishment unit to the storage unit may include adjusting the magnitude of the pressure supplied by the gas supply unit to the storage unit so that the value measured by the flow rate measuring unit becomes the flow rate set according to the filter placed between the flow rate measuring unit and the storage unit. In this case, the same effects as the apparatus in Example 3 can be obtained.

[0094] Example 17. The method of Example 16 may further include measuring the pressure of the processed liquid flowing upstream of the filter using a pressure measuring unit, and adjusting the flow rate of the processed liquid flowing into the storage unit based on the value measured by the pressure measuring unit. In this case, the same effects as the apparatus of Example 6 can be obtained.

[0095] Example 18. Any of the methods in Examples 15 to 17 may further include pressurizing the storage area with a gas supply unit, thereby causing the processed liquid in the storage area to be discharged from a nozzle fluidly connected to the storage area. In this case, the same effects as the apparatus in Example 9 can be obtained.

[0096] Example 19. In the method of Example 18, discharging the processing liquid from the nozzle may include, if the amount of processing liquid in the reservoir is less than a predetermined value, pressurizing another reservoir configured to temporarily store the processing liquid, thereby discharging the processing liquid in the other reservoir from a nozzle fluidly connected to the other reservoir. In this case, the same effects as the apparatus of Example 10 can be obtained.

[0097] Example 20. In the method of Example 18 or Example 19, replenishing the processing liquid from the replenishment unit to the storage unit may include supplying gas to the storage unit while exhausting gas midway, thereby pressurizing the storage unit with the gas supply unit. In this case, the same effects as the apparatus in Example 14 can be obtained. [Explanation of symbols]

[0098] 1...Substrate processing system (substrate processing device), 10...Processing unit, 20...Chamber (housing section), 30...Rotation holding section, 40...Liquid supply section, 42...Liquid source (replenishment section), 44...Gas source (gas supply section), Ctr...Controller (control section), D4, D5, D6...Piping (first flow path), D7, D9...Piping (second flow path), ER1, ER2...Electro-pneumatic regulator (gas supply section), F1...Filter (another filter), F2...Filter, L...Processing liquid, ME1...Pressure gauge (pressure measuring section), ME2...Flow meter (flow measuring section), N...Nozzle, SE11~SE13, SE21~SE23...Sensor (detection section), T1...Tank (storage section), T2...Tank (another storage section), V3, V4...Valve (flow adjustment section), V6, V7...Valve (gas supply section), W...Substrate.

Claims

1. A storage unit configured to temporarily store a processing liquid for processing the substrate, A replenishment unit configured to replenish the processing liquid in the storage unit, A flow rate measuring unit configured to measure the flow rate of the processing liquid to be replenished in the storage unit, A gas supply unit configured to supply gas to the storage unit and pressurize the inside of the storage unit, It includes a control unit, A substrate processing apparatus, wherein the control unit is configured to control the gas supply unit based on a value measured by the flow rate measuring unit, and to perform a process of replenishing the processing liquid from the replenishment unit to the storage unit while adjusting the magnitude of the pressure into the storage unit.

2. The apparatus according to claim 1, further comprising a filter disposed between the flow rate measuring unit and the storage unit.

3. The apparatus according to claim 2, wherein the process of supplying the processing liquid from the replenishment unit to the storage unit includes controlling the gas supply unit so that the value measured by the flow rate measuring unit becomes a flow rate set according to the filter, thereby adjusting the magnitude of the pressure into the storage unit.

4. The apparatus according to claim 2, wherein the filter material constituting the filter is made of polyimide.

5. The apparatus according to claim 2, further comprising a flow rate adjustment unit disposed between the filter and the storage unit, and configured to adjust the flow rate of the processed liquid flowing into the storage unit.

6. The system further includes a pressure measuring unit configured to measure the pressure of the processing liquid flowing upstream of the filter, The apparatus according to claim 5, wherein the control unit is configured to control the flow rate adjustment unit based on a value measured by the pressure measuring unit, and to further perform a process to adjust the flow rate of the processed liquid flowing into the storage unit.

7. The system further comprises another filter located upstream of the flow rate measuring unit, The filter material constituting the aforementioned other filter is made of polytetrafluoroethylene or polyethylene. The apparatus according to claim 1, wherein the processing solution is isopropyl alcohol.

8. A rotating holding unit configured to hold and rotate the aforementioned substrate, The apparatus according to claim 1, further comprising a housing configured to house the rotating holding unit and the storage unit.

9. The storage section further comprises a nozzle fluidly connected to it, The apparatus according to any one of claims 1 to 8, wherein the control unit is configured to control the gas supply unit and pressurize the storage unit to discharge the processed liquid in the storage unit from the nozzle.

10. The apparatus according to claim 9, wherein the process of discharging the processing liquid from the nozzle includes controlling the gas supply unit to pressurize the storage unit at a pressure higher than the pressure in the process of replenishing the processing liquid from the replenishment unit to the storage unit.

11. The system further comprises another storage unit configured to temporarily store the processing liquid, The nozzle is fluidly connected to the other reservoir, The gas supply unit is configured to supply gas to the other storage unit and pressurize the inside of the other storage unit. The apparatus according to claim 9, wherein the process of discharging the processing liquid from the nozzle includes, when the amount of the processing liquid in the storage unit is less than a predetermined value, controlling the gas supply unit to pressurize the storage unit, thereby discharging the processing liquid in the other storage unit from the nozzle.

12. The storage unit further comprises a detection unit for detecting the amount of the processing liquid in the storage unit, The apparatus according to claim 11, wherein the process of discharging the processing liquid from the nozzle includes, when the detection unit detects that the amount of the processing liquid in the storage unit has fallen below a predetermined value, controlling the gas supply unit during the discharge of the processing liquid from the nozzle to stop pressurizing the storage unit and start pressurizing another storage unit.

13. The apparatus according to claim 11, wherein the process of discharging the processing liquid from the nozzle includes, if the amount of processing liquid in the storage unit or the other storage unit is greater than or equal to the amount of processing liquid to be used as defined in the processing recipe for the substrate, controlling the gas supply unit to pressurize the storage unit or the other storage unit, thereby discharging the processing liquid in the storage unit or the other storage unit from the nozzle.

14. The gas supply unit includes a first flow path connected to the storage unit and a second flow path branched from the first flow path. The apparatus according to claim 1, wherein the process of replenishing the processing liquid from the replenishment unit to the storage unit includes pressurizing the storage unit by controlling the gas supply unit to supply the gas into the storage unit through the first flow path while exhausting the gas from the second flow path.

15. A storage section configured to temporarily store a processing liquid for processing substrates is pressurized by supplying gas from a gas supply section to the storage section. The flow rate of the processing liquid used to process the substrate is measured by a flow rate measuring unit when the processing liquid is replenished in the storage unit, A substrate processing method comprising replenishing the processing liquid from a replenishment unit to the storage unit while adjusting the magnitude of the pressure supplied to the storage unit by the gas supply unit based on a value measured by the flow rate measuring unit.

16. The method according to claim 15, wherein replenishing the processing liquid from the replenishment unit to the storage unit includes adjusting the magnitude of the pressure supplied by the gas supply unit to the storage unit so that the value measured by the flow rate measuring unit becomes a flow rate set according to a filter placed between the flow rate measuring unit and the storage unit.

17. The pressure of the processing liquid flowing upstream of the filter is measured by a pressure measuring unit, The method according to claim 16, further comprising adjusting the flow rate of the processing liquid flowing into the storage unit based on a value measured by the pressure measuring unit.

18. The method according to any one of claims 15 to 17, further comprising pressurizing the storage section with the gas supply section to discharge the processing liquid in the storage section from a nozzle fluidly connected to the storage section.

19. The method according to claim 18, wherein, if the amount of the processing liquid in the storage unit is less than a predetermined value, the processing liquid in the other storage unit is pressurized, thereby causing the processing liquid in the other storage unit to be discharged from the nozzle which is fluidly connected to the other storage unit.

20. The method according to claim 18, wherein replenishing the processing liquid from the replenishment unit to the storage unit includes supplying the gas into the storage unit while exhausting the gas midway, thereby pressurizing the storage unit by the gas supply unit.

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