Pick and Place with Die Actuators for Heterogeneous Integration

Abstract

A method of die placement is provided that includes obtaining a plurality of target locations for a plurality of donor dies; measuring the locations of the plurality of donor dies, where the plurality of donor dies are supported by a plurality of die actuators; adjusting, using the plurality of die actuators, the locations of the plurality of donor dies to substantially correspond to the plurality of target locations; and placing the plurality of donor dies on the plurality of target locations.

Description

[Technical Field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims priority to European Patent Application No. 22217348.6, filed December 30, 2022, the entire contents of which are incorporated herein by reference.

[0002]

[0002] The present disclosure relates generally to systems and methods for heterogeneous integration. [Background technology]

[0003]

[0003] In the manufacturing process of integrated circuits (ICs), multiple completed or unfinished ICs (e.g., whole wafers, diced wafers, partially diced wafers, chips, dies, etc.) may be contacted, stacked, bonded, or otherwise joined and arranged (e.g., into heterogeneous or homogeneous devices) at various points in the manufacturing process. Heterogeneous integration, such as the integration of different circuits or other patterned devices, may rely on the joining of specific portions (e.g., conductive contact elements) of multiple dies, where these specific portions may be aligned in three-dimensional space to ensure functional connectivity. The alignment of these dies, which may have multiple fabrication layers, different critical dimensions, different nodes, packaging, etc., relative to each other may require the subsequent use of different techniques for lithography during manufacturing. As the physical size of IC components continues to shrink and their structures continue to become more complex, precision and throughput in integration become even more important. For applications such as heterogeneous integration, it may be desirable to accurately and quickly position dies relative to each other.

[0004] In the context of semiconductor manufacturing, improvements in die placement and alignment (eg, improved heterogeneous integration) lead to improved IC manufacturability and integration capabilities. Summary of the Invention

[0005]

[0005] According to one embodiment, a method of die placement is provided that includes obtaining a plurality of target locations for a plurality of donor dies; measuring the locations of the plurality of donor dies, where the plurality of donor dies are supported by a plurality of die actuators; adjusting, using the plurality of die actuators, the locations of the plurality of donor dies to substantially correspond to the plurality of target locations; and placing the plurality of donor dies on the plurality of target locations.

[0006]

[0006] In one embodiment, measuring the locations of the multiple donor dies includes placing the multiple donor dies on multiple die actuators, where the multiple die actuators are supported by a support structure, and measuring the locations of the multiple donor dies relative to the support structure.

[0007]

[0007] In one embodiment, measuring the locations of the multiple donor dies further includes positioning multiple die actuators on the support structure based on the multiple target locations of the multiple donor dies.

[0008]

[0008] In one embodiment, adjusting the location of multiple donor dies using multiple die actuators includes adjusting the positions of multiple donor dies supported by donor die chucks of the multiple die actuators by actuating adjustable supports that support the donor die chucks.

[0009]

[0009] In one embodiment, placing the multiple donor dies on the multiple target locations further includes disengaging the multiple donor dies from the multiple die actuators and joining the multiple donor dies to the multiple target locations.

[0010]

[0010] According to another embodiment, a die actuator is provided that includes a donor die chuck and at least three adjustable supports that support the donor die chuck, wherein the position of the donor die chuck is controllable by actuation of the adjustable supports.

[0011]

[0011] According to one embodiment, a support structure including multiple die acts is provided.

[0012] According to another embodiment, an apparatus is provided that includes a plurality of die actuators, each including a donor die chuck for supporting an associated donor die. A position of each donor die chuck is controllable by actuation thereof. The apparatus includes a measurement system operatively coupled to the plurality of die actuators, the measurement system configured to: obtain a plurality of target locations for the plurality of donor dies; obtain locations of the plurality of donor dies supported by the donor die chucks; and adjust the locations of the plurality of donor dies by actuation of the donor die chucks such that the locations of the plurality of donor dies substantially correspond to the plurality of target locations.

[0013] In one embodiment, the die actuator further includes at least three adjustable supports supporting each donor die chuck, the position of each donor die chuck being controllable by actuation of the supporting adjustable supports.

[0014]

[0014] In one embodiment, the measurement system includes a processor configured to adjust the locations of the multiple donor dies by operating an adjustable support that supports them so that the locations of the multiple donor dies substantially correspond to the multiple target locations.

[0015]

[0015] According to another embodiment, one or more non-transitory machine-readable media are provided having instructions thereon that, when executed by a processor, are configured to perform the method of any other embodiment.

[0016]

[0016] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate one or more embodiments and, together with the description herein, explain these embodiments. Embodiments of the invention will now be described, by way of example only, with reference to the accompanying schematic drawings in which corresponding reference symbols indicate corresponding parts and in which: [Brief explanation of the drawings]

[0017] [Figure 1A] 1 is a schematic diagram illustrating an exemplary die bonding method according to one embodiment. [Figure 1B] 1 is a schematic diagram illustrating an exemplary die bonding method according to one embodiment. [Figure 1C] 1 is a schematic diagram illustrating an exemplary die bonding method according to one embodiment. [Figure 1D] 1 is a schematic diagram illustrating an exemplary die bonding method according to one embodiment. [Figure 2A]

[0018] 10A-10C are schematic diagrams illustrating how die actuators are positioned according to one embodiment. [Figure 2B]

[0018] FIG. 1 is a schematic diagram illustrating a method for positioning a die actuator according to one embodiment. [Figure 3A]

[0019] 1A-1C are schematic diagrams illustrating a method of positioning a donor die on a die actuator, according to one embodiment. [Figure 3B]

[0019] FIG. 1 is a schematic diagram illustrating a method for positioning a donor die on a die actuator, according to one embodiment. [Figure 4A]

[0020] FIG. 1 is a schematic diagram illustrating a method for acquiring multiple target locations, according to one embodiment. [Figure 4B]FIG. 1 is a schematic diagram illustrating a method for acquiring multiple target locations, according to one embodiment. [Figure 5A]

[0021] FIG. 10 is a schematic diagram illustrating a method for adjusting the location of a donor die, according to one embodiment. [Figure 5B] FIG. 10 is a schematic diagram illustrating a method for adjusting the location of a donor die, according to one embodiment. [Figure 6A]

[0022] 1A-1C are schematic diagrams illustrating steps in a method for placing a donor die on a target location, according to one embodiment. [Figure 6B]

[0022] FIG. 5 is a schematic diagram illustrating steps in a method for placing a donor die on a target location, according to one embodiment. [Figure 6C]

[0022] FIG. 5 is a schematic diagram illustrating steps in a method for placing a donor die on a target location, according to one embodiment. [Figure 6D]

[0022] FIG. 5 is a schematic diagram illustrating steps in a method for placing a donor die on a target location, according to one embodiment. [Figure 7]

[0023] 1 is a flowchart illustrating a method for die alignment according to one embodiment. [Figure 8A]

[0024] FIG. 2 is a schematic diagram illustrating an exemplary die actuator according to one embodiment. [Figure 8B] FIG. 2 is a schematic diagram illustrating an exemplary die actuator according to one embodiment. [Figure 9]

[0025] FIG. 1 is a schematic diagram illustrating the relationship between an exemplary pick and place system and an exemplary die actuator, according to one embodiment. [Figure 10A]

[0026] FIG. 2 is a schematic diagram illustrating an exemplary die actuator according to one embodiment. [Figure 10B] FIG. 2 is a schematic diagram illustrating an exemplary die actuator according to one embodiment. [Figure 11]

[0027] 10 is a flowchart illustrating a method for adjusting a die actuator according to one embodiment. [Figure 12]

[0028] FIG. 1 is a block diagram of an exemplary computer system according to one embodiment of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0018]

[0029] Embodiments of the present disclosure will be described in detail with reference to the drawings, which are provided as illustrative examples of the present disclosure to enable those skilled in the art to practice the present disclosure. Notably, the following drawings and examples are not intended to limit the scope of the present disclosure to a single embodiment; other embodiments are possible by replacing some or all of the described or illustrated elements. Furthermore, where specific elements of the present disclosure can be implemented partially or fully using known components, only the portions of such known components necessary for understanding the present disclosure will be described, and detailed descriptions of other portions of such known components will be omitted so as not to obscure the present disclosure. An embodiment described as being implemented in software should not be limited thereto unless otherwise specified herein, and may include embodiments implemented in hardware or a combination of software and hardware, as would be apparent to one skilled in the art, and vice versa. Herein, an embodiment depicting a singular component should not be considered limiting unless expressly specified otherwise herein; rather, the present disclosure is intended to encompass other embodiments including multiple identical components, and vice versa. Furthermore, applicants do not intend any term in this specification or claims to be ascribed a particular or special meaning unless expressly stated to the contrary. Furthermore, this disclosure encompasses present and future known equivalents to known components referred to herein by way of example.

[0019]

[0030] While specific reference may be made herein to the fabrication of ICs, it should be clearly understood that the description herein has many other anticipated applications. For example, the description herein may be used in the fabrication of integrated optical systems, induction and detection patterns for magnetic domain memories, liquid crystal display panels, thin-film magnetic heads, and the like. Those skilled in the art will understand that, in connection with such alternative applications, any use of the terms “wafer” or “die” herein should be considered interchangeable with the more general terms “substrate” and “target portion,” respectively. The term “wafer” may generally be used to refer to a large unit of fabrication (which may be the largest unit of fabrication), while the term “die” may be used to refer to a smaller unit of fabrication, which may correspond to a lithography pattern, a portion of a lithography pattern, multiple lithography patterns, and the like. A “die” may correspond to a portion of a “wafer.” That is, a “die” may be produced by dicing or otherwise dividing a “wafer.” The term “die” should be considered interchangeable with the terms chip, chiplet, or terms for dividing ICs. A patterning device (e.g., a lithography device) may contain or form one or more patterns that may correspond to one or more dies. The patterns may be generated based on a pattern or design layout using a CAD (computer-aided design) program; this process is often referred to as EDA (electronic design automation).

[0020]

[0031] 1A-1D, which are schematic diagrams illustrating an exemplary die bonding method consistent with embodiments of the present disclosure. The exemplary die bonding method is illustrated relative to a set of reference axes. The reference axes are provided for ease of explanation only and should not be construed as limiting. Included methods and apparatus may instead be described with reference to a different set of axes (e.g., cylindrical coordinates, polar coordinates, etc.), a different origin (e.g., donor die origin, target origin, origin between donor die and target, etc.), or a different orientation. A standard set of axes is selected such that the die fabrication plane (i.e., wafer surface) is in the xy plane and the fabrication direction is parallel or anti-parallel to the z-axis for both the donor die and target locations.

[0021]

[0032] As shown in FIGS. 1A-1D , an exemplary die bonding method may involve a donor die 102 and a target die 104. The terms “donor” and “target” are used herein for ease of description. It should be understood that the terms “donor” and “target” are provided for reference and are relative, and that an element described as corresponding to the “donor” may instead correspond to the “target,” and vice versa. The donor die 102 may have an electrically active area 106. The electrically active area 106 may correspond to a via (e.g., a through-silicon via (TSV)), an electrical contact line, a contact pad, a packaging pad, or other conductive area. The donor die 102 may have one or more electrically inactive areas (e.g., electrically insulating areas) outside the electrically active area 106. The electrically active area 106 may be recessed relative to other surfaces of the donor die 102 (as shown). The electrically active regions 106 may correspond to contacts to electrical devices (e.g., source, drain, gate, etc.) in the donor die 102 (not shown). The target die 104 may also have electrically active regions 108 and may have similar properties as the electrically active regions 106.

[0022]

[0033] 1A, an exemplary die-bonding method may include aligning at least some of the electrically active areas 106 of the donor die 102 with at least some of the electrically active areas 108 of the target die 104. The exemplary die-bonding method may involve contacting the donor die 102 with the target die 104 while maintaining alignment between the electrically active areas 106 within the electrically active areas 108. Alignment may be complicated by multiple layers of the donor die 102 or multiple layers of the target die 104, which may be optically opaque. FIGS. 1A-1C show cross-sectional views of portions of an exemplary die-bonding method.

[0023]

[0034] As further shown in FIG. 1A , the position of the donor die 102 or the target die 104 can be adjusted in the x-y plane (e.g., perpendicular to the z-axis approach direction), while the donor die 102 and the target die 104 can be brought together along the z-axis. As shown in FIG. 1B , the donor die 102 and the target die 104 can be annealed after contact. The annealing can be or include thermal annealing, electrical annealing, an electrostatic process, a van der Waals process, etc. As shown in FIG. 1C , the annealing can cause a physical or chemical change in the electrically active region 106 of the donor die 102 or the electrically active region 108 of the target die 104, which can cause physical or electrical contact between the electrically active regions 106 within the electrically active region 108. Thus, the annealing can result in electrical connectivity (e.g., integration) between elements of the donor die 102 and elements of the target die 104. This electrical connectivity may occur even if electrically active area 106 and electrically active area 108 are different, for example, have different recess depths, are made of different materials, have different dimensions, etc.

[0024]

[0035] FIG. 1D shows a plan view of an exemplary die bonding method according to the present disclosure. As shown in FIG. 1D, the donor die 102 and the target die 104 may have alignment marks along the xy plane to facilitate alignment of the die as a whole. Alignment marks in the xy plane of a die (e.g., the donor die 102 or the target die 104) may reduce the area available for circuitry. Lithography alignment marks used during wafer fabrication may be located in wasted areas, such as areas between chips, which may then be destroyed by dicing. Dicing, as used herein, refers to the mechanical separation of an area of ​​a wafer (e.g., a fabrication unit) into smaller areas (e.g., dies or chips) that may contain one or more operational units (e.g., logic devices, memory units, etc.). Dicing can operate using any suitable method, such as scribing and breaking, mechanical sawing, laser cutting, etc., and can destroy (e.g., grind to powder or otherwise render inoperable for circuit placement) non-zero linewidth portions of the wafer volume when separating the dies. Alternatively, the electrically active areas 106 of the donor die 102 or the electrically active areas 108 of the target die 104 (not shown in FIG. 1D ) or other surface features can serve as fiducial marks (e.g., alignment marks) for alignment of the donor die 102 and the target die 104. The donor die 102 and the target die 104 can be aligned in three dimensions before or during contact between the donor die 102 and the target die 104. For example, the donor die 102 or the target die 104 can be positioned or adjusted in the x-y plane when the donor die 102 and the target die 104 contact each other. The donor die 102 or target die 104 may be positioned or adjusted by movement of a die actuator or other die-scale element, such as by a piezoelectric stepper element, or movement of a wafer chuck or other wafer-scale element, such as by a stepper element.

[0025]

[0036] The position of the donor die 102 or the target die 104 can be adjusted with respect to up to six degrees of freedom. For example, given an origin at the center of the donor die 102, the donor die 102 can be adjusted by movement along the x-axis (e.g., in a positive or negative x-direction), along the y-axis (e.g., in a positive or negative y-direction), or along the z-axis (e.g., in a positive or negative z-direction). The donor die 102 can also be adjusted rotationally about each of these axes, for example, rotated about the x-axis, rotated about the y-axis, and rotated about the z-axis. That is, the donor die 102 can be adjusted by free rotation in space, which is accounted for by six different types of movement (the movements listed above are provided as examples, but the movements can be described by other axes).

[0026]

[0037] 2A-2B are schematic diagrams illustrating a method for positioning a die actuator. FIG. 2A illustrates a cross-sectional view of the placement of a die actuator 202 on a support structure 204. The die actuator 202 can be a device capable of supporting one or more donor dies (e.g., the donor die 102 of FIGS. 1A-1D). The die actuator 202 can support the donor die on one or more donor die chucks or other support structures. The die actuator 202 can electrostatically or otherwise secure the donor die to the one or more die chucks or other support structures. The die actuator 202 can have one or more adjustable elements (e.g., posts) that can be actuated to adjust the position of the donor die. The die actuator 202 can be capable of adjusting the position of the donor die in up to six directions (e.g., directions with six degrees of freedom). The die actuator 202 can be positioned on the support structure 204 by a pick-and-place element 216. The pick-and-place element 216 may place the die actuator 202 at a given location on the support structure 204. The pick-and-place element 216 may be a chip shooter, a gravity-based placer, a suction (e.g., vacuum) or other hydraulic-based placer, etc. The pick-and-place element 216 may have an end effector or other element that contacts the die actuator. The end effector may include an attachment element (e.g., electrostatic clamp, suction element) that allows the end effector to capture and / or release the die actuator. The end effector may also include an adjustable or configurable clamping element (such as a grabber arm) for gripping the die actuator, for example, a die actuator that may not have a flat surface suitable for suction bonding. The given location may be regularly, i.e., periodically (e.g., with a periodicity P in the Y direction). Y and periodicity P in the X direction X) The pick-and-place element 216 may also place the die actuator 202 on the support structure 204 at a given position in the Z direction (e.g., Δz). The pick-and-place element 216 may have inherent errors or imprecision regarding the extent of the die actuator size, the periodicity of the placement, the alignment features of the die actuator, etc. Thus, the die actuator 202 may have irregular placement and / or imprecision compared to a desired position. The die actuator 202 is further described with reference to FIGS. 8-10.

[0027]

[0038] The support structure 204 may be planar, like a wafer, and may be considered a rebuild wafer chuck because it can be used to rebuild a wafer from which donor dies have been diced. The support structure 204 may be a planar structure other than a wafer, or may correspond to a target die configuration (not shown in FIGS. 2A-2B ). The support structure 204 may be non-planar. For example, the support structure 204 may have one or more recessed or raised areas corresponding to the die actuators 202. The support structure 204 may have one or more alignment marks 206. The alignment marks 206 corresponding to gratings are merely exemplary alignment marks; the alignment marks may instead have different or additional features. The alignment marks 206 may occur in areas not occupied by the die actuators 202. The alignment marks 206 may be detectable from the top or bottom of the support structure 204, optically or otherwise (e.g., via UV light, via X-ray detection, via physical interlocking elements, etc.). For example, the support structure 204 may be optically transparent so that the alignment marks 206 may be visible from either the positive Z direction or the negative Z direction.

[0028]

[0039] 2B shows a plan view of the die actuator 202 disposed on the support structure 204. The position of the die actuator 202 may be described with reference to one or more origins. For ease of explanation, the position of the die actuator 202 is referred to herein as a point of origin (e.g., a point of origin with a periodicity P X and periodicity P Y The die actuators 202 are described with reference to their intended positions (as given by Δx and Θx, and Δz). The position of each of the die actuators 202 can be described in free space by six coordinates: Δx and Θx along the x-axis, Δy and Θy along the y-axis, and Δz and Θz along the z-axis (as shown in FIG. 2A). The angle Θi (where i is any one of x, y, or z) corresponds to the rotation angle of the donor die about the corresponding axis. Because there can be out-of-plane rotation (e.g., along Θz), the angles Θz and Θy may not be complementary. The position of the die actuators 202 may be limited by the precision and repeatability of the pick-and-place elements 216 and the regularity of the support structures 204. FIG. 2B shows an alternative alignment mark 212.

[0029]

[0040] 3A-3B are schematic diagrams illustrating a method for placing a donor die on a die actuator. FIG. 3A shows a cross-sectional view of the placement of a donor die 302 on a die actuator 202 on a support structure 204. The donor die 302 can be any die suitable for heterogeneous integration (or homogeneous integration). The donor die 302 can be supported by the die actuator 202. The donor die 302 can be placed on the die actuator 202 by the pick-and-place element 216 or alternatively by another pick-and-place element or by another method (e.g., by using a chip shooter). In one embodiment, the donor die 302 can be attached to an element of the die actuator 202, for example, by backside adhesive, before dicing the wafer containing the donor die 302. After dicing, the donor die 302 attached to the die actuator 202 can be placed on the support structure 204. The donor die 302 can be a donor die from a single wafer of multiple wafers of the same type or from wafers of different types. In one embodiment, the donor dies 302 may have substantially the same dimensions. The donor dies 302 may each be supported by one of the die actuators 202. In some embodiments, multiple donor dies 302 may each be supported by one of the die actuators 202. In some embodiments, some of the die actuators 202 may be empty or may not correspond to one of the donor dies 302. The donor dies 302 may be larger or smaller in size than the die actuators 202. The donor dies 302 may be secured to the die actuators 202 electrostatically or in other ways.

[0030]

[0041] The pick-and-place elements 216 may place the donor dies 302 at given positions on the die actuators 202. The given positions may be the same or different for each of the die actuators 202. For example, the pick-and-place elements 216 may place the donor dies 302 at given positions on the die actuators 202 relative to the support structures 204 (e.g., with a periodicity P in the Y direction). Y and periodicity P in the X direction XIn another example, pick-and-place element 216 may attempt to place donor die 302 relative to a given position (such as given by ). In another example, pick-and-place element 216 may attempt to place donor die 302 on die actuator 202 relative to only the position of die actuator 202. Pick-and-place element 216 may or may not attempt to compensate for irregularities in the placement of die actuator 202 when placing donor die 302.

[0031]

[0042] Also shown in FIG. 3A is a location measuring device 208. The location measuring device 208 can be a camera, such as a two-dimensional camera, two or more one-dimensional cameras, an optical camera, or another measuring device. The location measuring device 208 can be composed of multiple location measuring devices, such as an in-plane measuring device that can measure location in the x-y plane and an out-of-plane measuring device that can measure location or distance in the Z direction. In one embodiment, the location measuring device 208 includes a confocal microscope that measures depth. A confocal microscope can measure depth (e.g., position in the Z direction) based on detecting the depth of a focal plane when focusing on an element or surface. A confocal microscope can measure depth relative to other positions on the die, for example, can detect changes in depth in the Z direction across the die surface, or can measure absolute depth, for example, the distance from the microscope to the die surface. In one embodiment, the location measuring device 208 can measure position, relative position, or absolute position, for example, using overlay diffraction or other diffraction-based methods based on scattering by a diffraction grating in or on the die. In one embodiment, the position of the die can be determined based on a two-dimensional image of the die. For example, the x-offset, y-offset, rotation angle about the x-axis, or rotation angle about the y-axis may be determined based on detection of an edge or side of the die, and the offset may be determined relative to a die actuator, a position on the support structure 204, etc. In one embodiment, the position of the die may be determined based on a one-dimensional image of the die, such as one obtained by an in-line camera. For example, the x-offset, y-offset, rotation angle about the x-axis, or rotation angle about the y-axis may be determined based on a one-dimensional (or quasi-one-dimensional) image obtained at a known position. The difference between the intended position and the actual position may be determined based on the difference between the intended position in the one-dimensional image and the actual position in the one-dimensional image. The location measuring device 208 may operate in a scanning mode or from a fixed position relative to the support structure 204.

[0032]

[0043] FIG. 3B shows a plan view of donor die 302 disposed on die actuator 202, which is disposed on support structure 204. The position of donor die 302 may be described with reference to one or more origins. For ease of explanation, the position of donor die 302 is referred to herein as the origin (e.g., the periodic P in FIGS. 2A-2B). X and periodicity P Y The donor dies 302 are described with reference to their intended positions (as given by Δx+δx and θx) along the x-axis, Δy+δy and θy along the y-axis, and Δz+δz and θz along the z-axis (as shown in FIG. 3A). The angle θi (where i can be any one of x, y, or z) corresponds to the rotation angle of the donor die 302 about the corresponding axis. Because there can be out-of-plane rotation (e.g., along θz as shown in FIG. 3A), the angles θz and θy may not be complementary. The position of the donor die 302 may be limited by the precision and repeatability of the pick-and-place elements 216, the placement of the die actuator 202, and the regularity of the support structures 204.

[0033]

[0044] 4A-4B are schematic diagrams illustrating a method for acquiring multiple target locations. FIG. 4A shows a cross-sectional view of a target die 412 on a die actuator 402 on a support structure 404. While the target die 412 is shown as an individual die, the target die 412 may instead be one or more contiguous dies. For example, the target die 412 may be a target die of an undiced wafer, including a completely or relatively unpatterned wafer. The target die 412 may be supported by one or more die actuators 402 or may be placed directly on the support structure 404. The target die 412 may be the same or different, similar to the donor die 302 of FIGS. 3A-3B. The target die 412 may be the same as the donor die 302 or may be different, including corresponding to a different type of circuit, a different node, memory versus logic, etc. The die actuator 402 may have one or more features as described above with reference to the die actuator 202. The support structure 404 may have one or more features such as those described above with reference to the support structure 204 .

[0034]

[0045] The die actuator 402 may be placed on the support structure 404 by a pick-and-place element, such as similar to the pick-and-place element 216. The target die 412 may be placed on the support structure 404 or the die actuator 402 by a pick-and-place element, such as the pick-and-place element 216. The intended positions (e.g., of the target die 412 or the die actuator 402) may be determined by a periodicity (e.g., a periodicity P in the Y direction Y ' and periodicity P in the X direction XThe pick-and-place element 216 may also place the target die 412 or the die actuator 402 on the support structure 404 at a given position in the Z direction (e.g., Δz′ or Δz′+δz′) . Due to imprecision and repeatability issues of the pick-and-place element, the intended position may differ from the actual position. The pick-and-place element may operate (e.g., repeatedly) in conjunction with a location measuring device, such as the location measuring device 208. The location measuring device 208 may be the same as or different from the location measuring device 208 of FIG. 3A .

[0035]

[0046] The support structure 404 may be planar, such as a wafer. The support structure 404 may be shaped to be complementary to the support structure 204 (e.g., of FIG. 2A), or vice versa. The support structure 404 may have one or more alignment marks 406. The alignment marks 406 corresponding to a grating are merely exemplary alignment marks. The alignment marks 406 may complement the alignment marks 206 (of FIG. 2A). The alignment marks 406 may enable alignment of the support structure 404 with the support structure 204 (of FIG. 2A).

[0036]

[0047] 4B illustrates a plan view of the position of a target die 412 on a die actuator 402 disposed on a support structure 404. As a further example, the die actuators 402 in FIG. 4B are shown as corresponding to planar die actuators 402, instead of individual die actuators 402 for each target die 412 as shown in FIG. 4A. For example, planar die actuators 402 may be used when, for example, the target die 412 has a known thickness (e.g., is flattened) and only positional adjustment in a plane is required. The position of the target die 412 may be described with reference to one or more origins. For ease of explanation, the position of the target die 412 may be referred to herein as a point of origin (e.g., a point of origin with a periodicity P X and periodicity P YThe positions of the target dies 412 are described with reference to their intended positions (as given by δx'+θx' and Δz). The position of each of the target dies 412 can be described in free space by six coordinates: δx'+θx' along the x-axis, δy'+θy' along the y-axis, and Δz'+δz' and θ' along the z-axis (as shown in FIG. 4A). The angle θi corresponds to the rotation angle of the target die 412 about the corresponding axis. Because there can be out-of-plane rotation (e.g., along θz), the angles θz and θy may not be complementary. The position of the target dies 412 may be limited by the accuracy and repeatability of the pick-and-place elements 216, the placement of the die actuator 402, and the regularity of the support structures 404. The position of the target dies 412 may be more accurate for a full wafer than for a diced wafer. FIG. 4B shows an alternative alignment mark 416 that complements the alternative alignment mark 212 shown in FIG. 2B.

[0037]

[0048] 5A-5B are schematic diagrams illustrating a method for adjusting the location of a donor die. FIG. 5A shows a cross-sectional view of the arrangement of donor die 302 on die actuator 202 on support structure 204 after adjusting the location of donor die 302. Donor die 302 can be adjusted (e.g., into position) by any suitable operation of die actuator 202. Exemplary operation of the die actuator is further described with reference to FIGS. 8-10.

[0038]

[0049] The die actuator 202 may operate in coordination with the location measuring device 208. The die actuator 202 may incrementally (or iteratively) adjust the position of the donor die 302 based on or in response to position information obtained by the location measuring device 208. The die actuator 202 may also or alternatively adjust the position of the donor die 302 based on position information of a target die (e.g., the target die 412 in FIGS. 4A-4B ). The die actuator 202 may attempt to move the donor die 302 to an intended position (e.g., to compensate for errors in the placement of the die actuator 202). In some embodiments, the die actuator 202 may operate in coordination with a die actuator of a target die (e.g., the die actuator 402 of the target die 412 in FIGS. 4A-4B ) to align the donor die 302 to the target die at a location that may not be the intended location. Die actuator 202 may align donor die 302 with or without reference to a position on support structure 204 (e.g., with or without reference to alignment mark 206). Die actuator 202 may additionally or alternatively adjust its own position in one or more directions.

[0039]

[0050] 4B shows a plan view of the donor die 302 disposed on the die actuator 202, which is disposed on the support structure 204, after alignment. The positions of the donor die 302 may be described with reference to one or more origins. The position of each donor die 302 may be described in free space by six coordinates: δx and θx along the x-axis (where θx indicates parallelism with the x-axis), δy and θy along the y-axis (where θy indicates parallelism with the y-axis), and Δz+δz and θz (as shown in FIG. 4A ) along the z-axis, where θz indicates parallelism between the xy longitudinal plane of the donor die 302 and the support structure 204. The positions of the donor die 302 may be limited by the precision and repeatability of the die actuator 202 and may still include a placement error that may be smaller than the placement error expected when using pick-and-place elements.

[0040]

[0051] 6A-6D are schematic diagrams illustrating steps in a method for placing a donor die on a target location. FIGS. 6A-6D are cross-sectional views of various steps in die placement. FIG. 6A illustrates placement of donor die 302 on target die 412 by bringing support structure 204 and support structure 404 into close proximity. While support structure 404 is shown in FIG. 6A as approaching support structure 204, the approach direction is relative; alternatively, or in addition, support structure 204 may approach support structure 404. While support structure 404 is shown in FIG. 6A as being rotated (e.g., about the x-axis) to complement the position of support structure 204, either or both support structure 204 and support structure 404 may be rotated or translated prior to approach. Support structure 404 may be aligned (eg, in the X direction, Y direction, Z direction, rotational direction, etc.) to support structure 204 based on the alignment marks, for example, based on alignment mark 406 relative to alignment mark 206 .

[0041]

[0052] 6B illustrates the fine alignment of the support structure 404 and the support structure 204 when the donor die 302 contacts the target die 412. Adjustments of the support structure 404, the support structure 204, the die actuator 202, or the die actuator 402 can be used to provide fine alignment of the donor die 412 on the target die 302 when the donor die 302 contacts the target die 412. The alignment of the donor die 302 and the target die 412 can be accurate to within 200 nm. The alignment of the donor die 302 and the target die 412 when supported by the die actuator 202 or the die actuator 402 can be more accurate than can be achieved by pick-and-place alone. Placement of the donor die 302 on the target die 412 when supported by the die actuator 202 or the die actuator 402 may additionally (or alternatively) be faster than placement by a die bonder. The placement of the donor die 302 onto the target die 412 when supported by the die actuator 202 or die actuator 402 may require, for example, the donor die 302 and the target die 412 to have the same dimensions (e.g., this may be most useful for homogeneous integration), which may provide die placement for various dies that are not across the entire wafer, for diced wafers that cannot be placed, aligned, or bonded by a wafer bonder.

[0042]

[0053] FIG. 6C illustrates removal of the support structure 204 after the donor die 302 contacts the target die 412. Contact between the donor die 302 and the target die 412 may include bonding (e.g., electrostatic bonding, van der Waals attraction, etc.) or annealing of the donor die 302 and the target die 412. After the donor die 302 is bonded to the target die 412, the target die 412 may be released from the die actuator 202 by methods including electrostatic methods. The release may include active disengagement between the die actuator 202 and the donor die 302, such as electrostatic repulsion. After the donor die 302 is released from the die actuator 202, the support structure 204 may be moved to separate the die actuator 202 and the donor die 302. While removal of the support structure 204 is shown along the Z direction, it may alternatively or additionally be in another direction. In some embodiments, removal of the support structure 204 may include disassembly or destruction of the support structure 204.

[0043]

[0054] 6D illustrates the removal of the support structure 404 after the donor die 302 has been bonded to the contact die 412. The donor die 302 in the contact die 412 may be supported by another support structure (not shown), such as a collection bin, a chip feeder line, or the like. As described with respect to the release of the donor die 302 from the die actuator 202 and support structure 204, the target die 412 may be actively or passively released from the die actuator 402 and support structure 404. The donor die 302 and contact die 412 may be annealed before or after removal of the support structure 404 (or removal of the support structure 204), or may be bonded electrically, physically, chemically, etc. Once bonded, the donor die 302 and target die 412 may function as a single unit, for example, in a circuit. The donor die 302 and the target die 412 may be further processed, such as by lithography, further analyzed, such as by electrical testing, further diced, further integrated with additional die (e.g., additional donor die 302, additional target die 412, additional die of a different type, etc.), packaged, etc.

[0044]

[0055] FIG. 7 is a flowchart illustrating a method of die alignment. Each of these operations is described in detail below. The operations of method 700 presented below are intended to be exemplary. In some embodiments, method 700 may be performed with one or more additional operations not described and / or without one or more of the operations discussed. Additionally, the order in which the operations of method 700 are shown in FIG. 7 and described below is not intended to be limiting. In some embodiments, one or more portions of method 700 may be implemented (e.g., by simulation, modeling, etc.) on one or more processing devices (e.g., one or more processors). The one or more processing devices may include one or more devices that perform some or all of the operations of method 700 in accordance with instructions electronically stored on an electronic storage medium. The one or more processing devices may include, for example, one or more devices configured via hardware, firmware, and / or software specifically designed for the performance of one or more of the operations of method 700.

[0045]

[0056] In operation 710, multiple target locations are obtained. The target locations may correspond to locations of multiple target dies. The target locations may correspond to multiple locations on a target wafer. The target locations may be positions (e.g., positions in three dimensions, such as along the X, Y, and Z axes, positions in six directions, such as along the X, Y, and Z axes, and positions relative to rotation angles about these axes, etc.). The target locations may be a set of, for example, two or more positions, of or on a target (e.g., an electrically active area, such as electrically active area 108 in FIG. 1A ) to which a region of a donor die is to be bonded.

[0046]

[0057] The multiple target locations may be obtained from a target pattern, e.g., from a target location plan. The multiple target locations may be obtained for measurement, e.g., from measurements of a manufactured target die, target wafer, etc. The multiple target locations may be obtained in any suitable coordinate system relative to one or more alignment marks, e.g., on the target wafer, on a die actuator, on a support structure, etc.

[0047]

[0058] In some embodiments, the die actuator may be placed on the support structure based on the obtained multiple target locations, i.e., the multiple target locations may be used to inform the pick-and-place elements when placing the multiple die actuators. In some embodiments, the donor die may be placed on the die actuator based on the obtained multiple target locations, i.e., the multiple target locations may be used to inform the pick-and-place elements when placing the multiple donor dies.

[0048]

[0059] In operation 720, multiple donor die locations are obtained. The donor die locations may be obtained through measurement of one or more positions of the donor die along one or more dimensions. The multiple donor die locations may be measured in-plane (e.g., in the x-y plane) by a first method and out-of-plane (e.g., in the Z direction) by a second method. For example, the multiple donor die locations may be measured based on one or more in-plane images. The multiple donor die locations may be obtained from two-dimensional images that may indicate the location of edges or corners of the donor die relative to positions on support structures or die actuators. The multiple donor die locations may be obtained based on features (e.g., electrically active areas) on the exposed surface of the donor die. These features of the donor die may be used as alignment marks or fiducial marks. In some embodiments, alignment marks may be included as exposed features of the donor die. The alignment marks may be added specifically for die bonding or may be alignment marks corresponding to a previous manufacturing step.

[0049]

[0060] In operation 730, the locations of the multiple donor dies are adjusted. Adjustments include minimally or substantially no adjustment of the locations after measurement, such as whether the measured locations correspond to target locations within a threshold. The locations of the multiple donor dies may be adjusted by operation of a die actuator. The die actuator may adjust the length, position, or angle of one or more supports (e.g., support posts) that support the donor die chuck or other donor die support. The die actuator may be controlled in a manner including electrical control, such as by one or more measurement systems, such as a measurement system incorporating location measurement elements. The die actuator may be controlled by a system, such as one or more measurement systems, that also control pick-and-place elements. The adjustment of the locations of the multiple donor dies may correspond to the adjustment of one or more donor die checks. The adjustment of the locations of the multiple donor dies may correspond to the adjustment of one or more donor die actuators.

[0050]

[0061] Adjusting the multiple donor die locations may include iteratively measuring the multiple donor die locations, including when the adjustments are being made. In one or more embodiments, the iterative measurement and adjustment steps may be used for a threshold number of iterations (e.g., one iteration, two iterations, etc.). In one or more embodiments, the iterative measurement and adjustment steps may be used until a threshold value of donor die placement is reached, such as a minimum offset from the intended location. In one or more embodiments, the iterative adjustment may be triggered by a difference between the intended location of the donor die and the donor die placement exceeding a threshold value. For example, multiple donor die locations may be obtained, multiple donor die locations may be adjusted, and adjusted multiple donor die locations may be obtained. Based on a determination that the adjusted donor die locations match the intended locations within the threshold, the iterations of measurement and adjustment may end. Based on a determination that the adjusted donor die locations do not match the intended locations within the threshold, the iterations of measurement and adjustment may continue.

[0051]

[0062] In operation 740, multiple donor dies are positioned on multiple target locations. The donor dies may be positioned on the target locations by movement of one or more support structures or one or more die actuators. As the donor dies contact the target locations, the donor dies at the target locations may undergo self-alignment. For example, the donor dies may be biased relative to the target locations such that an electrically active region of the donor die is attracted to a specific region, such as an electrically attractive region, of the target location. The multiple donor dies may be bonded to the multiple target locations. The multiple donor dies may be bonded to the multiple target locations by annealing, etc. The multiple donor dies may be released from the multiple die actuators or support structures.

[0052]

[0063] In some embodiments, additional sets of donor dies can be placed on multiple die actuators. For example, if the target locations correspond to those of a target wafer, the target locations obtained for one of the target wafers can be applied to additional target wafers having the same manufacturing parameters. In another example, when multiple dies are stacked, the target locations for a second layer stack can be obtained when a first layer stack is performed, e.g., the donor die locations for the first layer stack can be used as the target locations for the second layer stack.

[0053]

[0064] As mentioned above, the method 700 (and / or other methods and systems described herein) is configured for alignment of multiple dies.

[0054]

[0065] 8A-8B are schematic diagrams illustrating an exemplary die actuator. FIG. 8A is a cross-sectional view of an exemplary die actuator, consisting of a body 802, a die actuator clamp 804, a shear-mode piezoelectric element 808, a die platform 810, and a die clamp 812. A donor die 820 and a support structure 830 are also shown. The body 802 of the die actuator may include one or more die actuator electrodes 840. The body 802 may have dimensions of approximately 10 mm x 10 mm in the xy plane. The body 802 may be fabricated from a metal, a semiconductor material (silicon, silicon dioxide, etc.), or by additive or subtractive manufacturing. The body 802 may be fabricated by three-dimensional printing. The sidewalls of the body 802 may be higher or lower than the height of the die platform 810. The die actuator clamp 804 may be an electrostatic clamp. The die actuator clamp 804 may be a capacitive clamp. The die actuator clamp may include a shear piezoelectric material between two clamps (which may be electrostatic clamps, capacitive clamps, etc.), and each of the clamps and shear piezoelectric elements may operate independently. The die actuator clamp 804 may apply a high voltage (which may be a constant or varying signal) to the surface of the die actuator's main body 802, the surface of the shear piezoelectric element 808, and the surface of the die platform 810 to induce an attractive force between the die actuator clamp 804 and the surface of the main body 802, the die platform 810, or the shear piezoelectric element 808. When engaged, the die actuator clamp 804 may prevent movement of the main body 802, the die platform 810, or the shear piezoelectric element 808 relative to one another (e.g., may prevent the die platform 810 from sliding relative to the main body 802). When released, the die actuator clamp 804 may allow the surfaces of the main body 802, the die platform 810, or the shear piezoelectric element 808 to slide apart from one another. The die actuator clamp 804 is operable to provide micro-stepper functionality between the shear mode piezoelectric element 808 , the body 802 and the die platform 810 .

[0055]

[0066] The support structure 830 may include one or more controller electrodes 842, which operate in conjunction with the die actuator electrodes 840 to provide power to and control the die actuators. The one or more controller electrodes 842 may provide power to the die actuator electrodes, for example, inductively or capacitively (e.g., via capacitive charging). While the one or more controller electrodes 842 and the one or more die actuator electrodes 840 are shown as being separated by a depth in the body 802 and the support structure 830, it should be understood that one or more controller electrodes may be surface electrodes, and one or more die actuator electrodes may be surface electrodes. The one or more controller electrodes, including different ones of the one or more controller electrodes, may provide power, actuation signals, control signals, etc. The signals may be wireless, impedance-based, capacitive, voltage-based, current-based, etc. For example, a given one or more controller electrodes 842 may provide power, while another one or more controller electrodes 842 may provide a control signal for a given die actuator clamp 804. One or more die actuator electrodes 840 may correspond to different elements of the die actuator. For example, a given one of the one or more die actuator electrodes 840 may correspond to the clamping effect of a given one of the die actuator clamps, while another one of the one or more die actuator electrodes 840 may correspond to the releasing effect of a given one of the die actuator clamps. The die actuator electrodes 840 may be provided with signals by one or more controller electrodes 842 that cause actuation of the die actuator. For example, the die actuator electrodes 840 corresponding to the piezoelectric elements 808 and the die actuator clamps 804 may be sequentially actuated (e.g., turned on or off) based on digital or analog signals from the one or more controller electrodes 842.

[0056]

[0067] The relationship between one or more controller electrodes 842 and one or more die actuator electrodes 840 may be known (e.g., based on the measured positioning of the die actuator body 802 on the support structure 830) or may be determined, for example, by sequentially supplying test signals to each of the one or more controller electrodes 842 and observing (e.g., experimentally) the corresponding effect on the die actuator, which may include clamping, releasing, piezoelectric action, etc.

[0057]

[0068] The support structure 830 can be a wafer with patterned electrodes, such as a silicon dioxide on a silicon wafer. The support structure can be a printed circuit board (PCB), including a ceramic PCB. The support structure 830 can be a wafer chuck, constructed of, for example, Teflon or another inert material, with embedded electrodes.

[0058]

[0069] The die actuator may operate by adjusting the position of one or more supports of the die clamp 812. The die clamp 812 may be an electrostatic clamp that functions to clamp or release the donor die 820. The die clamp 812 may apply a high voltage (which may be a constant or varying signal) to the donor die 820 to induce an electrostatic attraction between the die clamp 812 and the donor die 820, resulting in adhesion of the donor die 820 to the die clamp 812. The die clamp 812 may be actuated by a voltage signal received at a die actuator electrode 842. The die platform 810 is shown supported by at least two legs 816 (shown in cross section), which are in turn supported by the die actuator clamps 804 and shear-mode piezo elements 818. The position of the legs 816 supporting the die platform 810 may be adjusted through the use of shear-mode piezo elements 808, which may operate as a stepper in conjunction with two or more of the die actuator clamps 804. To eliminate hysteresis due to movement of the die platform 810, a stepper function may be used in which two or more die actuator clamps 804 corresponding to the legs 816 supporting the die platform 810 alternately grip and release, although shear-mode piezoelectric elements may be susceptible to hysteresis and drift. The legs 816 may be metal or other material capable of withstanding bending and forces consistent with placement of the donor die 820 on the die platform 810 and placement of the donor die 820 on the target die (e.g., capable of withstanding pressure without breaking or capable of bouncing back after deformation). While two legs 816 are shown supporting the die platform 810, it should be understood that more legs 816 may be used and that the legs 816 need not be coplanar with each other in the y-plane (as shown merely for ease of illustration). The legs 816 may be further constructed to withstand forces from die placement, such as by incorporating leaf springs, other spring elements, flexure elements, etc. The legs 816 may be formed by wire-electrical discharge machining (wire-EDM), laser cutting, or the like.The legs 816 can be angled relative to the base (e.g., feet) of the die platform or relative to the die platform (e.g., relative to the donor die). The thickness of the legs 816 can be adjusted to adjust the rigidity of the die platform 810.

[0059]

[0070] FIG. 8B is a cross-sectional view of a portion of the exemplary die actuator of FIG. 8A. FIG. 8B shows a portion of the body 802, a shear-mode piezoelectric element 808, and a portion of the die platform 810. FIG. 8B also shows three die actuator clamps 804A-C, which can operate together to form a microstepper for adjusting the position of the die platform 810 by adjusting the position of the legs 816. The shear-mode piezoelectric element 808 can be changed, such as by applying an electric potential. While the shear-mode piezoelectric element 808 is shown as being able to bend along the y-direction, this depiction is merely by way of example, and the shear-mode piezoelectric element 808 can change in other ways, such as in size (e.g., by contraction stretching) or along different directions. The shear-mode piezoelectric element 808 can experience drift or hysteresis (which can be a property of certain types of piezoelectric materials, for example). To mitigate these factors, the shear-mode piezoelectric element 808 can be used with stationary pillars or other portions of the body 802 to operate as a stepper.

[0060]

[0071] In stepper mode, die actuator clamps 804A-C may clamp and release in cycles to adjust the position of the base of legs 816 and, therefore, the position of the donor die (e.g., donor die 820 in FIG. 8A ). For example, to move legs 816 toward the positive y-direction, die actuator clamp 804A may be released (e.g., receive a signal to release an electrostatic clamp or other clamp, which may be a voltage drop from an on voltage to an off voltage) while die actuator clamps 804A-C remain clamped (e.g., receive a signal to maintain the clamp, which may be an on voltage signal or a signal to maintain it). When die actuator clamp 804A is released, shear-mode piezoelectric element 808 may be activated (e.g., receive a voltage change signal, which may be, for example, a switch from a large positive voltage to a large negative voltage), which may move shear-mode piezoelectric element 808 from its initial position to an excited position, such as the position indicated by dashed parallelogram 850. Dashed parallelogram 850 is provided merely as an example; the excitation position of piezoelectric element 808 may be determined by the material and initial configuration of shear-mode piezoelectric element 808. Actuation of shear-mode piezoelectric element 808 may result in leg 816 (and die platform 810) moving in the positive y-direction, as shown by dashed line diagram 852 (corresponding to the position of die actuator clamp 804B) and dashed line diagram 854 (corresponding to the position of die platform 810). While shear-mode piezoelectric element 808 remains under tension, die actuator clamp 804A may clamp (e.g., receive a signal to initiate clamping, which may be a voltage switch from an off voltage to an on voltage), thereby holding leg 816 and die platform 810 in a new position. Once die actuator clamp 804A is clamped, die actuator clamps 804B or 804C may release (e.g., receive a signal to release the clamp, which may be a voltage drop from an on voltage to an off voltage).This may cause shear-mode piezoelectric element 808 to be deactivated (e.g., to a de-energized state, which may correspond to receiving a voltage change signal, such as a return to a near-zero voltage or a change from a large negative voltage to a large positive voltage), allowing it to return to its initial or relaxed state. Piezoelectric element 808 may be energized and de-energized in cycles (or energized in one direction and then energized in another direction instead of de-energized) with clamping and releasing of die actuator clamps 804A-C to "step" or incrementally move the position of legs 816, die platform 810, and donor die (e.g., donor die 820 in FIG. 8A).

[0061]

[0072] Multiple piezoelectric elements (such as piezoelectric element 808) may be used to provide multiple-directional adjustment of legs 816, die platform 810, and donor die (e.g., donor die 820 in FIG. 8A). For example, there may be one or more die actuator clamps and additional columns of shear-mode piezoelectric elements (not shown) that can move the base of the legs along the x-direction. In one embodiment, multiple shear-mode piezoelectric elements may be used to move legs 816 in multiple directions at once, for example, by actuating shear-mode piezoelectric element 808 in the y-direction and also actuating a shear-mode piezoelectric element (not shown) in the x-direction while die actuator clamp 804a is disengaged. In one embodiment, shear-mode piezoelectric elements may be used to move legs 816 one at a time (e.g., sequentially) in multiple directions.

[0062]

[0073] FIG. 9 is a schematic diagram illustrating the relationship between an exemplary pick-and-place system and an exemplary die actuator. FIG. 9 is a cross-sectional view of an exemplary die actuator (e.g., the die actuator of FIG. 8) disposed on a support structure (e.g., the support structure 830 of FIG. 8). The die actuator can be moved by a pick-and-place element (e.g., the pick-and-place element 216 of FIG. 2A). The die actuator can be picked, transported, placed, or otherwise manipulated by the pick-and-place element via a dedicated end effector, such as end effector 902. The end effector 902 can be shaped to contact the body of the die actuator (e.g., the body 802 of FIG. 8). The end effector 902 can electrostatically adhere or attract the body of the die actuator through the use of suction, such as by hydraulic effect. The end effector 902 can have an opening and closing element (e.g., a grabber arm or other sliding element) that can be used to select or hold the die actuator. The end effector 902 can have dimensions similar to the outer dimensions of the body 810 of the die actuator. The die actuator body 810 may have sidewalls that protrude in the z-direction to allow the end effector 902 to adhere to the die actuator. The end effector 902 may have one or more release mechanisms to release the die actuator body after it is placed on the support structure. As shown, the end effector 902 includes an adhesive element, identified by a dashed oval 910. The adhesive element may be electrostatic, suction, capacitive, or the like. The adhesive element may be any suitable adhesive element, including those described with reference to the pick-and-place element 216 in FIG. 2A. While the adhesive element is shown interacting with the vertical plane of the die actuator body 810, it may instead interact with other planes or a single plane of the die actuator. For example, the die actuator may include a horizontal plane or pedestal with which the pick-and-place element interacts by suction. In another example, the die actuator may include vertical locations that surround the donor die 820 along both sides in the x-direction and both sides in the y-direction.In this example, the end effector 902 can include sliding elements that grip each of the four surrounding planes, such as with friction pads, by van der Waals forces, etc. The sliding elements can release (e.g., expand outward) to release the die actuator.

[0063]

[0074] 10A-10B are schematic diagrams illustrating an exemplary die actuator. FIG. 10A is a plan view of the exemplary die actuator 1000, while FIG. 10B is an orthogonal view of the exemplary die actuator 1000. The exemplary die actuator 1000 includes a die platform 1010, which may further include a die clamp or other means for securing the donor die (or target die). The exemplary die actuator 1000 includes three supports (e.g., legs, structures, etc.) 1030A-1030C that support the die platform 1010. The three supports 1030A-1030C are notched springs that join the die platform at a 45° angle (although other angles may be used). The notched leaf springs may be relatively flat, with an exemplary length of 3 mm and an exemplary thickness of 0.1 mm. The notches in the leaf spring (identified by dashed ovals 1040 on support 1030B) may be formed by voids cut into the flat surface of the leaf spring. The notches in the leaf spring may reduce the stiffness of the leaf spring. The width of the unnotched portion of the leaf spring (e.g., the narrow area between the notches) may be adjusted to provide the desired stiffness. The notched leaf spring may have a preformed crease (e.g., a bend) that is collinear with the notches, for example. Each of the three supports 1030A-1030C is then supported by a leg (e.g., leg 1020A-1020B), which may be a contact point with the support platform or rest on the body of the die actuator. The three supports 1030A-1030C also join the legs 1020A-1020B at a 45° angle (although other angles may be used). In the exemplary die actuator 1000, three supports 1030A-1030C provide positioning adjustment for the die platform 1010 (and therefore the donor die supported by the die platform 1010). Each of the three supports 1030A-1030C can be adjusted by movement of the corresponding leg 1020A-1020C.Each of the legs 1020A-1020C can be adjusted in at least two orthogonal directions along the x-y plane (e.g., along the x and y directions, or along two other sets of axes rotated relative to the x and y axes). By moving each of the legs 1020A-1020C, the die platform 1010 can also be adjusted out-of-plane (e.g., along the z direction). For example, by moving each of the legs 1020A-1020C inward, the die platform 1010 can be raised in the z direction, and by moving each of the legs 1020A-1020C outward, the die platform 1010 can be lowered. The three supports 1030A-1030C are shown as leaf springs, but could alternatively or additionally be any other suitable supports. The three supports 1030A-1030C shown may be the minimum number of supports required to adjust the position of the donor die in six degrees of freedom. However, more supports may be used. Alternatively, fewer supports may be used if the donor die is adjusted in only three degrees of freedom (e.g., only in the x-y plane without consideration of rotation). The die actuator 1000 may be constructed by machining, micro-machining, etc. The die actuator 1000 may be constructed from a single material (e.g., by destructive machining), from multiple materials (e.g., by additive machining), or by a combination of similar and different materials.

[0064]

[0075] FIG. 11 is a flowchart illustrating a method for adjusting a die actuator. Each of these operations is described in detail below. The operations of method 1100 presented below are intended to be exemplary. In some embodiments, method 1100 may be performed with one or more additional operations not described and / or without one or more of the operations discussed. Additionally, the order in which the operations of method 1100 are shown in FIG. 11 and described below is not intended to be limiting. In some embodiments, one or more portions of method 1100 may be implemented (e.g., by simulation, modeling, etc.) on one or more processing devices (e.g., one or more processors). The one or more processing devices may include one or more devices that perform some or all of the operations of method 1100 in accordance with instructions electronically stored on an electronic storage medium. The one or more processing devices may include, for example, one or more devices configured via hardware, firmware, and / or software specifically designed for the performance of one or more of the operations of method 1100.

[0065]

[0076] In operation 1110, the donor die locations are obtained. The donor die locations may be obtained using any suitable method, including the methods described above with reference to operation 720 in Figure 7. The donor die locations may be measured or obtained from a storage device.

[0066]

[0077] In operation 1120, target locations corresponding to the donor die locations are obtained. The target locations may be obtained using any suitable method, including the methods described above with reference to operation 710 in Figure 7. The target locations may be measured or obtained from storage. The target locations corresponding to the donor die may be identified from multiple target locations.

[0067]

[0078] In some embodiments, the donor die location and the target location may be obtained in reverse order, and the order of operations provided herein is for illustrative purposes only and should not be construed as limiting. In some embodiments, the intended donor die location is determined based on the target location. For example, the corresponding location of the donor die (i.e., the intended donor die location) may be determined based on the difference between the ideal target location and the actual target location. In some embodiments, the difference between the donor die location and the intended donor die location may be determined. The difference may be determined with respect to one or more directions, for example, with respect to up to six degrees of freedom. The difference between the intended donor die location and the donor die location may be used to determine an adjustment factor in up to six degrees of freedom, where the adjustment factor may be a distance, a rotation angle, etc.

[0068]

[0079] In operation 1130, the location of the donor die is adjusted. The location of the donor die may be adjusted by a piezoelectric or other actuator. The location of the donor die may be adjusted by applying electrical actuation (or other actuation) to one or more supports to lengthen or shorten the supports. The location of the donor die may be adjusted by applying electrical actuation (e.g., via a piezoelectric microstepper) to the legs of one or more supports to move the base of one or more supports in one or more directions at a time. The location of the donor die may be adjusted based on the donor die location, the target location, a relationship between the donor die location and the target location, etc. The location of the donor die may be adjusted using any suitable method, such as those described with reference to FIGS. 7-10 . In some embodiments, the location of the donor die may be measured (or otherwise obtained) after adjustment. The location of the donor die may be iteratively measured and adjusted. In some embodiments, the location of the donor die may be tracked as a function of adjustment, for example, to determine drift of one or more adjustment actuators or to improve future adjustments.

[0069]

[0080] As mentioned above, the method 1100 (and / or other methods and systems described herein) is configured for die alignment.

[0070]

[0081] 12 is a diagram of an exemplary computer system CS that may be used for one or more of the operations described herein. The computer system CS includes a bus BS or other communication mechanism for communicating information and a processor PRO (or multiple processors) coupled to the bus BS for processing information. The computer system CS also includes a main memory MM, such as a random access memory (RAM) or other dynamic storage device, coupled to the bus BS for storing information and instructions executed by the processor PRO. The main memory MM may also be used to store temporary variables or other intermediate information during execution of instructions by the processor PRO. The computer system CS further includes a read-only memory (ROM) ROM or other static storage device coupled to the bus BS for storing static information and instructions for the processor PRO. A storage device SD, such as a magnetic or optical disk, is provided and coupled to the bus BS for storing information and instructions.

[0071]

[0082] The computer system CS may be coupled via a bus BS to a display DS, such as a cathode ray tube (CRT) or flat-panel or touch-panel display, for displaying information to a computer user. An input device ID, including alphanumeric and other keys, is coupled to the bus BS for communicating information and command selections to the processor PRO. Another type of user input device is a cursor control CC, such as a mouse, trackball, or cursor direction keys, for communicating directional information and command selections to the processor PRO and for controlling cursor movement on the display DS. This input device typically has two degrees of freedom in two axes, a first axis (e.g., x) and a second axis (e.g., y), that allow the device to specify a position in a plane. Touch-panel (screen) displays may also be used as input devices.

[0072]

[0083] In some embodiments, portions of one or more methods described herein may be performed by computer system CS in response to processor PRO executing one or more sequences of one or more instructions contained in main memory MM. Such instructions may be read into main memory MM from another computer-readable medium, such as storage device SD. Execution of the sequences of instructions contained in main memory MM causes processor PRO to perform the process steps (operations) described herein. One or more processors in a multiprocessing arrangement may also be used to execute the sequences of instructions contained in main memory MM. In some embodiments, hardwired circuitry may be used in place of or in combination with software instructions. Thus, the description herein is not limited to any specific combination of hardware circuitry and software.

[0073]

[0084] The terms "computer-readable medium" and / or "machine-readable medium," as used herein, refer to any medium that participates in providing instructions to a processor PRO for execution. Such media may take many forms, including, but not limited to, non-volatile media, volatile media, and transmission media. Non-volatile media include, for example, optical or magnetic disks, such as a storage device SD. Volatile media include dynamic memory, such as a main memory MM. Transmission media include coaxial cables, copper wire, and fiber optics, including the wires that comprise the bus BS. Transmission media may also take the form of acoustic or light waves, such as those generated during radio frequency (RF) and infrared (IR) data communications. Computer-readable media may be non-transitory, such as a floppy disk, a flexible disk, a hard disk, magnetic tape, any other magnetic media, a CD-ROM, a DVD, any other optical media, punch cards, paper tape, any other physical media with a pattern of holes, RAM, PROM and EPROM, flash EPROM, or any other memory chip or cartridge. Non-transitory computer-readable media may have instructions recorded thereon. The instructions, when executed by a computer, may implement any of the operations described herein. The transitory computer-readable medium may include, for example, a carrier wave or other propagating electromagnetic signal.

[0074]

[0085] Various forms of computer-readable media may be involved in carrying one or more sequences of one or more instructions to processor PRO for execution. For example, the instructions may initially reside on a magnetic disk of a remote computer. The remote computer may load the instructions into a dynamic memory and send the instructions over a telephone line using a modem. A modem local to computer system CS may receive the data on the telephone line and convert the data to an infrared signal using an infrared transmitter. An infrared detector coupled to bus BS may receive the data carried in the infrared signal and place the data on bus BS. Bus BS carries the data to main memory MM, where processor PRO retrieves and executes the instructions. The instructions received by main memory MM may optionally be stored on storage device SD either before or after execution by processor PRO.

[0075]

[0086] The computer system CS may also include a communications interface CI coupled to the bus BS. The communications interface CI provides a bidirectional data communications coupling to a network link NDL connected to a local network LAN. For example, the communications interface CI may be an Integrated Services Digital Network (ISDN) card or a modem for providing a data communications connection to a corresponding type of telephone line. As another example, the communications interface CI may be a local area network (LAN) card for providing a data communications connection to a compatible LAN. A wireless link may also be implemented. In any such implementation, the communications interface CI sends and receives electrical, electromagnetic, or optical signals that carry digital data streams representing various types of information.

[0076]

[0087] The network link NDL typically provides data communication over one or more networks to other data devices. For example, the network link NDL may provide a connection to a host computer HC over a local network LAN. This may include data communication services provided over the worldwide packet data communication network now commonly referred to as the "Internet" INT. The local network LAN (Internet) may use electrical, electromagnetic, or optical signals that carry digital data streams. The signals through the various networks and on the network data link NDL and through the communication interface CI that carry digital data to and from the computer system CS are exemplary forms of carrier waves transmitting information.

[0077]

[0088] The computer system CS can send messages and receive data, including program code, via the network, network data link NDL, and communication interface CI. In the Internet example, the host computer HC can transmit requested code for an application program via the Internet INT, network data link NDL, local network LAN, and communication interface CI. One such downloaded application can, for example, provide all or part of the methods described herein. The received code can be executed by the processor PRO upon receipt and / or stored in the storage device SD or other non-volatile storage for later execution. In this manner, the computer system CS can obtain application code in the form of a carrier wave.

[0078]

[0089] Embodiments of the present disclosure are defined in the following numbered clauses:

[0079] Clause 1: A method of die placement, comprising: acquiring a plurality of target locations for a plurality of donor dies; measuring locations of a plurality of donor dies, the plurality of donor dies being supported by a plurality of die actuators; adjusting locations of the plurality of donor dies to substantially correspond to the plurality of target locations using a plurality of die actuators; Placing multiple donor dies on multiple target locations; A method comprising:

[0080] Clause 2: Measuring the location of multiple donor dies disposing a plurality of donor dies on a plurality of die actuators, the plurality of die actuators being supported by a support structure; measuring the locations of the plurality of donor dies relative to the support structure; 2. The method according to clause 1, comprising:

[0081] Clause 3: The method of clause 2, wherein measuring the locations of the multiple donor dies further includes positioning multiple die actuators on the support structure based on multiple target locations of the multiple donor dies.

[0082] Clause 4: The method described in Clause 2, wherein placing a plurality of die actuators on a support structure includes placing a plurality of die actuators on the support structure using a pick and place tool, and the support structure is configured to substantially correspond to a plurality of target locations.

[0083] Clause 5: Arranging multiple donor dies determining values ​​of a plurality of quality measures of the donor die; selecting a plurality of donor dies from the plurality of donor dies for placement based on a determination that the value of the quality metric satisfies a threshold; 5. The method of any one of clauses 2 to 4, further comprising:

[0084] Clause 6: The method described in Clause 1, wherein adjusting the location of the multiple donor dies using the multiple die actuators includes adjusting the positions of the multiple donor dies supported by the donor die chucks of the multiple die actuators by actuation of adjustable supports that support the donor die chucks.

[0085] Clause 7: The method of clause 6, wherein the positions of the multiple donor dies are adjustable with respect to six degrees of freedom.

[0086] Clause 8: The method described in Clause 1, wherein acquiring multiple target locations of multiple donor dies includes acquiring multiple target locations of multiple donor dies in up to six degrees of freedom, and measuring the locations of the multiple donor dies includes measuring the locations of the multiple donor dies in up to six degrees of freedom.

[0087] Clause 9: The method of clause 1, wherein obtaining a plurality of target locations of a plurality of donor dies includes measuring a plurality of target locations of a plurality of donor dies.

[0088] Clause 10: The method described in Clause 1, wherein adjusting the locations of the multiple donor dies includes determining whether the locations of the multiple donor dies correspond to the multiple target locations, and adjusting the locations of the multiple donor dies by actuating adjustable supports of the multiple die actuators based on a determination that the locations of the multiple donor dies do not correspond to the multiple target locations.

[0089] Clause 11: Placing multiple donor dies on multiple target locations disengaging the plurality of donor dies from the plurality of die actuators; Bonding multiple donor dies to multiple target locations; 2. The method of clause 1, further comprising:

[0090] Clause 12: disposing a second plurality of donor dies on a plurality of die actuators; measuring locations of a second plurality of donor dies; adjusting locations of the second plurality of donor dies to substantially correspond to the plurality of target locations using a plurality of die actuators; disposing a second plurality of donor dies on the plurality of target locations; 12. The method of clause 11, further comprising:

[0091] Clause 13: acquiring a second plurality of target locations of a second plurality of donor dies; disposing a second plurality of donor dies on the plurality of die actuators; measuring locations of a second plurality of donor dies; adjusting locations of the second plurality of donor dies to substantially correspond to the second plurality of target locations using the plurality of die actuators; placing a second plurality of donor dies on a second plurality of target locations; 12. The method of clause 11, further comprising:

[0092] Clause 14: The method of clause 1, further comprising annealing metal contacts of the plurality of donor dies to metal contacts on the plurality of target locations.

[0093] Clause 15: The method of clause 1, wherein the plurality of target locations includes a plurality of target dies.

[0094] Clause 16: The method of clause 1, wherein measuring locations of the plurality of donor dies includes measuring locations of contacts on the plurality of donor dies.

[0095] Clause 17: The method of clause 16, wherein determining the location of the contact includes determining the location of the contact based on an optical image.

[0096] Clause 18: The method of clause 16, wherein determining the location of the contact includes determining the location of the contact based on confocal imaging.

[0097] Clause 19: a donor die chuck; at least three adjustable supports for supporting the donor die chuck; wherein the position of the donor die chuck is controllable by actuation of the adjustable support.

[0098] Clause 20: A die actuator as described in clause 19, wherein the adjustable support includes a piezoelectric stepper and the position of the donor die chuck is controllable by electrical adjustment of the piezoelectric stepper.

[0099] Clause 21: The die actuator of clause 19, wherein the position of the donor die chuck is controllable in up to six degrees of freedom.

[0100] Clause 22: The die actuator of clause 19, further comprising an electrostatic clamp, wherein the donor die chuck is capable of holding the donor die via the electrostatic clamp.

[0101] Clause 23: The die actuator of clause 19, further comprising an electrode, the electrode capable of receiving a signal for actuation of the element of the adjustable support.

[0102] Clause 24: A die actuator as described in Clause 23, wherein the first electrode is electrically connected to the piezoelectric element, and the first electrode is capable of receiving a signal corresponding to mechanical actuation of the piezoelectric element.

[0103] Clause 25: A die actuator as described in Clause 23, wherein the second electrode is electrically connected to the clamping element, and the second electrode is capable of receiving a signal corresponding to engagement of the clamping element or release of the clamping element.

[0104] Clause 26: The die actuator of clause 23, wherein the signal for actuating the element of the adjustable support is an inductive signal.

[0105] Clause 27: A die actuator according to clause 23, wherein the signal for actuating the element of the adjustable support is a capacitive signal.

[0106] Clause 28: A support structure including a plurality of die actuators according to clauses 19 to 27.

[0107] Article 29: A device comprising: a plurality of die actuators each including a donor die chuck for supporting an associated donor die, the position of each donor die chuck being controllable by actuation thereof; a measurement system operatively coupled to the plurality of die actuators, comprising: acquiring a plurality of target locations for a plurality of donor dies; obtaining a plurality of donor die locations supported by the donor die chuck; adjusting locations of the plurality of donor dies by actuation of the donor die chuck so that the locations of the plurality of donor dies substantially correspond to the plurality of target locations; a measurement system configured to: An apparatus comprising:

[0108] Clause 30: The apparatus described in Clause 29, wherein the die actuator further includes at least three adjustable supports supporting each donor die chuck, and the position of each donor die chuck is controllable by actuation of the supporting adjustable supports.

[0109] Clause 31: The apparatus described in Clause 30, wherein the measurement system includes a processor configured to adjust the locations of the multiple donor dies by actuating the supporting adjustable supports so that the locations of the multiple donor dies substantially correspond to the multiple target locations.

[0110] Clause 32: The measurement system includes a processor configured to adjust locations of the plurality of donor dies by actuation of the die actuator such that the locations of the plurality of donor dies substantially correspond to the plurality of target locations, and the measurement system further includes a camera configured to acquire optical images of the plurality of donor dies; 30. The apparatus of clause 29, wherein the locations of the plurality of donor dies are determined based on optical images of the plurality of donor dies.

[0111] Clause 33: The measurement system further includes a second camera configured to acquire optical images of the plurality of target locations; 33. The apparatus of clause 32, wherein the plurality of target locations are determined based on optical images of the plurality of target locations.

[0112] Clause 34: The measurement system includes a processor configured to adjust locations of the plurality of donor dies by actuation of the donor die chuck such that locations of the plurality of donor dies substantially correspond to the plurality of target locations, and the measurement system further includes a confocal microscope configured to acquire topographies of the plurality of donor dies; 30. The apparatus of clause 29, wherein the locations of the plurality of donor dies are determined based on a topography of the plurality of donor dies.

[0113] Clause 35: The measurement system further includes a second confocal microscope configured to acquire topographies of the plurality of target locations; 35. The apparatus of clause 34, wherein the plurality of target locations are determined based on a topography of the plurality of target locations.

[0114] Clause 36: Further including a pick and place tool operatively coupled to the measurement system; a processor; One or more non-transitory machine-readable media having instructions thereon that, when executed by a processor, Controlling a pick and place tool to place a plurality of donor dies on a plurality of die actuators one or more non-transitory machine-readable media configured to perform 29. The apparatus of claim 29, comprising:

[0115] Clause 37: The apparatus of clause 36, wherein the instructions, when executed by the processor, are further configured to control a pick and place tool to position the plurality of die actuators on the support structure.

[0116] Clause 38: The apparatus described in Clause 29, further comprising an alignment tool operatively coupled to the measurement system, the alignment tool configured to align a structure supporting multiple die actuators with a structure supporting multiple target locations.

[0117] Clause 39: A wafer transfer tool operatively coupled to a measurement system, comprising: positioning at least one of a structure supporting a plurality of die actuators and a structure supporting a plurality of target locations; and contacting the plurality of donor dies with the plurality of target locations by moving at least one of the structure supporting the plurality of die actuators and the structure supporting the plurality of target locations with a wafer transfer tool. 30. The apparatus of clause 29, further comprising a wafer transfer tool configured to:

[0118] Clause 40: The apparatus of clause 29, further comprising a bonding tool configured to bond a plurality of donor dies to a plurality of target locations.

[0119]

[0090] While the concepts disclosed herein may be used for manufacturing using substrates such as silicon wafers, it should be understood that the disclosed concepts may be used with any type of manufacturing system (e.g., one used for manufacturing on substrates other than silicon wafers).

[0120] Additionally, combinations and subcombinations of the disclosed elements may comprise separate embodiments. For example, one or more of the operations described above may be included in separate embodiments, or they may be included together in the same embodiment.

[0121]

[0092] The above description is intended to be illustrative, not limiting. Thus, it will be apparent to one skilled in the art that modifications as described may be made without departing from the scope of the claims set forth below.

Claims

1. 1. An apparatus comprising: a plurality of die actuators, each of the die actuators including a donor die chuck for supporting an associated donor die, the position of each donor die chuck being controllable by actuation thereof; a measurement system operatively coupled to the plurality of die actuators, acquiring a plurality of target locations for a plurality of donor dies; obtaining locations of the plurality of donor dies supported by the donor die chuck; adjusting the locations of the plurality of donor dies by actuation of the donor die chuck so that the locations of the plurality of donor dies substantially correspond to the plurality of target locations; a measurement system configured to: An apparatus comprising:

2. 10. The apparatus of claim 1, wherein the die actuator further comprises at least three adjustable supports supporting each donor die chuck, the position of each donor die chuck being controllable by actuation of the supporting adjustable supports.

3. The apparatus of claim 2 , wherein the measurement system includes a processor configured to adjust the locations of the plurality of donor dies by actuating the supporting adjustable supports so that the locations of the plurality of donor dies substantially correspond to the plurality of target locations.

4. the measurement system includes a processor configured to adjust the locations of the plurality of donor dies by actuation of the die actuator such that the locations of the plurality of donor dies substantially correspond to the plurality of target locations, and the measurement system further includes a camera configured to acquire optical images of the plurality of donor dies; The apparatus of claim 1 , wherein the locations of the plurality of donor dies are determined based on the optical images of the plurality of donor dies.

5. the measurement system further includes a second camera configured to acquire optical images of the plurality of target locations; The apparatus of claim 4 , wherein the plurality of target locations are determined based on the optical images of the plurality of target locations.

6. the measurement system includes a processor configured to adjust the locations of the plurality of donor dies by actuation of the donor die chuck so that the locations of the plurality of donor dies substantially correspond to the plurality of target locations, and the measurement system further includes a confocal microscope configured to acquire topographies of the plurality of donor dies; The apparatus of claim 1 , wherein the locations of the plurality of donor dies are determined based on the topography of the plurality of donor dies.

7. the measurement system further includes a second confocal microscope configured to acquire topographies of the plurality of target locations; The apparatus of claim 6 , wherein the plurality of target locations are determined based on the topography of the plurality of target locations.

8. further comprising a pick and place tool operatively coupled to the measurement system; a processor; One or more non-transitory machine-readable media having instructions thereon that, when executed by the processor, controlling the pick and place tool to place the plurality of donor dies onto the plurality of die actuators; one or more non-transitory machine-readable media configured to perform The apparatus of claim 1 , comprising:

9. The apparatus of claim 8 , wherein the instructions, when executed by the processor, are further configured to control the pick and place tool to place the plurality of die actuators onto a support structure.

10. 10. The apparatus of claim 1, further comprising an alignment tool operatively coupled to the measurement system, the alignment tool configured to align a structure supporting the plurality of die actuators with a structure supporting the plurality of target locations.

11. a wafer transfer tool operatively coupled to the measurement system, positioning at least one of a structure supporting the plurality of die actuators and a structure supporting the plurality of target locations; moving at least one of the structure supporting the plurality of die actuators and the structure supporting the plurality of target locations with the wafer transfer tool to bring the plurality of donor dies into contact with the plurality of target locations; The apparatus of claim 1 , further comprising a wafer transfer tool configured to:

12. The apparatus of claim 1 , further comprising a bonding tool configured to bond the plurality of donor dies to the plurality of target locations.

13. 1. A method of die placement comprising: acquiring a plurality of target locations for a plurality of donor dies; measuring locations of the plurality of donor dies, the plurality of donor dies being supported by a plurality of die actuators; adjusting the locations of the donor dies to substantially correspond to the target locations using the die actuators; placing the plurality of donor dies over the plurality of target locations; A method comprising:

14. Measuring the locations of the plurality of donor dies includes: placing the plurality of donor dies on the plurality of die actuators, the plurality of die actuators being supported by a support structure; measuring the locations of the plurality of donor dies relative to the support structure; 14. The method of claim 13, comprising:

15. The method of claim 14 , wherein measuring the locations of the plurality of donor dies further comprises positioning the plurality of die actuators on the support structure based on the plurality of target locations of the plurality of donor dies.

Images